cm75rl-24nf_e

1200±207515075150520
V V A A A A W
Collector-emitter voltage Gate-emitter voltage Maximum collector dissipation
G-E Short C-E Short
DC, T C = 87°C *1Pulse (Note 2)Pulse
(Note 2)
T C = 25°C
Symbol Parameter
Collector current Emitter current
Conditions
Unit Ratings V CES V GES I C I CM
I E (Note 1)I EM (Note 1)P C (Note 3)
ABSOLUTE MAXIMUM RATINGS (Tj = 25°C)INVERTER PART
1200±2050100390120050
V V A A W V A
Collector-emitter voltage Gate-emitter voltage Maximum collector dissipation Repetitive peak reverse voltage Forward current
G-E Short C-E Short
DC, T C = 94°C *1Pulse
(Note 2)
T C = 25°C
Clamp diode part Clamp diode part
Symbol Parameter
Collector current
Conditions
Unit Ratings V CES V GES I C I CM
P C (Note 3)V RRM I FM
BRAKE PART
–40 ~ +150–40 ~ +12525002.5 ~ 3.52.5 ~ 3.5350
°C °C V N • m N • m g
Junction temperature Storage temperature Isolation voltage Torque strength Weight
Main Terminal to base plate, AC 1 min.Main Terminal M5Mounting holes M5Typical value
Symbol Parameter
Conditions
Unit Ratings T j T stg V iso
———
(COMMON RATING)
I C = 5.0mA
I C = 50A, V GE = 15V V CE = 10V V GE = 0V
I C = 7.5mA, V CE = 10V I C = 75A, V GE = 15V V CE = 10V V GE = 0V
V CE = V CES , V GE = 0V V GE = V GES , V CE = 0V V CC = 600V, I C = 50A, V GE = 15V I F = 50A IGBT part *1
Clamp diode part *1
V CE = V CES , V GE = 0V V GE = V GES , V CE = 0V V CC = 600V, I C = 75A, V GE = 15V
V CC = 600V, I C = 75A V GE1 = V GE2 = 15V
R G = 4.2Ω, Inductive load switching operation I E = 75A
I E = 75A, V GE = 0V
IGBT part (1/6 module)*1FWDi part (1/6 module)*1
Case to fin, Thermal compound Applied (1/6 module)*2
10.53.0—11.51.00.23—10050300350120—3.80.240.36—63
mA µA nF nF nF nC ns ns ns ns µC V °C/W °C/W °C/W Ω
——2.12.4———338—————3———0.085—
——————————————————4.2
7V V 68ns Collector cutoff current Gate leakage current Input capacitance Output capacitance
Reverse transfer capacitance Total gate charge Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time
Reverse recovery time Reverse recovery charge Emitter-collector voltage Contact thermal resistance External gate resistance
Gate-emitter threshold voltage Collector-emitter saturation voltage Thermal resistance I CES I GES C ies C oes C res Q G t d(on)t r
t d(off)t f
t rr (Note 1)Q rr (Note 1)V EC(Note 1)R th(j-c)Q R th(j-c)R R th(c-f)R G
Symbol Parameter
V GE(th)V CE(sat)Unit Typ.Limits Min.Max.Test conditions
ELECTRICAL CHARACTERISTICS (Tj = 25°C)INVERTER PART
10.53.0—8.50.750.17—3.80.320.4363
mA µA nF nF nF nC V °C/W °C/W Ω
——2.12.4———250————
———————————6.3
7V V 68Collector cutoff current Gate leakage current Input capacitance Output capacitance
Reverse transfer capacitance Total gate charge Forward voltage drop Thermal resistance External gate resistance
Gate-emitter threshold voltage Collector-emitter saturation voltage I CES I GES C ies C oes C res Q G V FM
R th(j-c)Q R th(j-c)R R G
Symbol Parameter
V GE(th)V CE(sat)*1 : Tc measured point is just under the chips.
If you use this value, R th(f-a) should be measured just under the chips.*
2 : Typical value is measured by using Shin-etsu Silicone “G-746”.Note 1. I E , V EC , t rr & Q rr represent characteristics of the anti-parallel, emitter to collector free-wheel diode (FWDi).
2. Pulse width and repetition rate should be such that the device junction temp. (T j ) does not exceed T jmax rating.
3. Junction temperature (T j ) should not increase beyond 150°C.
4. Pulse width and repetition rate should be such as to cause neglible temperature rise.
Unit Typ.Limits Min.Max.Test conditions
BRAKE PART
T j = 25°C T j = 125°C
T j = 25°C T j = 125°C。