2SK2808中文资料

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2SK2850-01中文资料

Symbol VDS ID ID(puls] VGS IAR *2 EAS *1 PD Tch Tstg
Ratings 900 ±6 ±24 ±30 6 277 125
+150 -55 to +150
*1 L=14.1mH, Vcc=90V
Unit
V A A V A mJ W °C °C *2 Tch<=150°C
1.0 900
10
Max. Units
V
3.5 V
500
µA
1.0 mA
100
nA
2.50 Ω
S
1450
pF
210
120
30
ns
80
170
90
A
1.5 V
ns
µC
Thermalcharacteristics Item Thermal resistance
Symbol Rth(ch-c)
Rth(ch-a)
Zthch-c [K/W]
Transient thermal impedande Zthch=f(t) parameter:D=t/T
101
100 D=0.5
0.2
0.1 10-1 0.05
0
0.02 0.01
t t
D= T
T
10-2
10-5
10-4
10-3
10-2
10-1
100
101
t [s]
4
100
150
Eas [mJ]
10-1
10-2 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
VSD [V]
100 50 0 0

2SK2586中文资料

2SK2586Silicon N-Channel MOS FETADE-208-358 C4th. EditionApplicationHigh speed power switchingFeatures• Low on-resistance• R DS(on) = 7 m typ.• High speed switching• 4 V gate drive device can be driven from 5 V sourceOutline2SK25862Absolute Maximum Ratings (Ta = 25°C)ItemSymbol Ratings Unit Drain to source voltage V DSS 60V Gate to source voltage V GSS ±20V Drain current I D *260A Drain peak currentI D(pulse)*1240A Body to drain diode reverse drain current I DR *260A Avalanche current I AP *345A Avalanche energy E AR *3174mJ Channel dissipation Pch*2125W Channel temperature Tch 150°C Storage temperatureTstg–55 to +150°CNotes: 1.PW ≤ 10 µs, duty cycle ≤ 1 %2.Value at Tc = 25°C3.Value at Tch = 25°C, Rg ≥ 50 Ω2SK25863Electrical Characteristics (Ta = 25°C)ItemSymbol Min Typ Max Unit Test Conditions Drain to source breakdown voltageV (BR)DSS 60——V I D = 10 mA, V GS = 0Gate to source breakdown voltageV (BR)GSS ±20——V I G = ±100 µA, V DS = 0Gate to source leak current I GSS ——±10µA V GS = ±16 V, V DS = 0Zero gate voltage drain current I DSS——100µA V DS = 60 V, V GS = 0Gate to source cutoff voltage V GS(off) 1.0— 2.0V I D = 1 mA, V DS = 10 V Static drain to source on state resistanceR DS(on)—710m ΩI D = 30 A V GS = 10 V*1—1016m ΩI D = 30 A V GS = 4 V*1Forward transfer admittance |y fs |3560—S I D = 30 A V DS = 10 V*1Input capacitance Ciss —3550—pF V DS = 10 V Output capacitanceCoss —1760—pF V GS = 0Reverse transfer capacitance Crss —500—pF f = 1 MHz Turn-on delay time t d(on)—35—ns I D = 30 A Rise timet r —260—ns V GS = 10 V Turn-off delay time t d(off)—480—ns R L = 1.0 ΩFall timet f —370—ns Body to drain diode forward voltageV DF —0.94—V I F = 60 A, V GS = 0Body to drain diode reverse recovery time t rr—140—nsI F = 60 A, V GS = 0diF / dt = 50 A / µs Note:1.Pulse TestSee characteristic curves of 2SK2529.2SK25864Hitachi CodeJEDECEIAJWeight (reference value)TO-3P—Conforms5.0 gUnit: mmCautions1.Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,copyright, trademark, or other intellectual property rights for information contained in this document.Hitachi bears no responsibility for problems that may arise with third party’s rights, includingintellectual property rights, in connection with use of the information contained in this document.2.Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use.3.Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,contact Hitachi’s sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,traffic, safety equipment or medical equipment for life support.4.Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installationconditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product.5.This product is not designed to be radiation resistant.6.No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi.7.Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor products.Hitachi, Ltd.Semiconductor & Integrated Circuits.Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan.Hitachi Asia Pte. Ltd.16 Collyer Quay #20-00Hitachi TowerSingapore 049318Tel: 535-2100Fax: 535-1533URLNorthAmerica : http:/Europe : /hel/ecg Asia (Singapore): .sg/grp3/sicd/index.htm Asia (Taiwan): /E/Product/SICD_Frame.htm Asia (HongKong): /eng/bo/grp3/index.htm Japan : http://www.hitachi.co.jp/Sicd/indx.htmHitachi Asia Ltd.Taipei Branch Office3F, Hung Kuo Building. No.167, Tun-Hwa North Road, Taipei (105)Tel: <886> (2) 2718-3666Fax: <886> (2) 2718-8180Hitachi Asia (Hong Kong) Ltd.Group III (Electronic Components)7/F., North Tower, World Finance Centre,Harbour City, Canton Road, Tsim Sha Tsui,Kowloon, Hong Kong Tel: <852> (2) 735 9218Fax: <852> (2) 730 0281 Telex: 40815 HITEC HXHitachi Europe Ltd.Electronic Components Group.Whitebrook ParkLower Cookham Road MaidenheadBerkshire SL6 8YA, United Kingdom Tel: <44> (1628) 585000Fax: <44> (1628) 778322Hitachi Europe GmbHElectronic components Group Dornacher Stra§e 3D-85622 Feldkirchen, Munich GermanyTel: <49> (89) 9 9180-0Fax: <49> (89) 9 29 30 00Hitachi Semiconductor (America) Inc.179 East Tasman Drive,San Jose,CA 95134 Tel: <1> (408) 433-1990Fax: <1>(408) 433-0223For further information write to:。

2SK2648中文资料

V (BR)DSS ID=1mA
VGS=0V
Gate Threshhold Voltage
V GS(th)
ID=1mA
VDS= VGS
Zero Gate Voltage Drain Current
I DSS
VDS=800V Tch=25°C
VGS=0V
Tch=125°C
Gate Source Leakage Current
Collmer Semiconductor - P.O. Box 702708 - Dallas TX - 75370 - 972.233.1589 - 972.233.0481 Fax - - 11/98
元器件交易网
N-channel MOS-FET
I GSS
VGS=±30V VDS=0V
Drain Source On-State Resistance
R DS(on)
ID=4,5A
VGS=10V
Forward Transconductance
g fs
ID=4,5A
VDS=25V
Input Capacitance
C iss
VDS=25V
Output Capacitance
→ VSD [V]
Transient Thermal impedance
Zthch=f(t) parameter:D=t/T
ID [A]
PD [W]
→ Tc [°C]
→ VDS [V]
This specification is subject to change without notice!
t [s] →
Avalanche Capability

2SK1522中文资料(renesas)中文数据手册「EasyDatasheet - 矽搜」

6.瑞萨科技公司事先书面批准,不得翻印或再现全部或部分这些物料.
7.如果这些产品或技术受日本出口管理限制,必须是日本政府根据许可证出口,不能导入比批准目地以外国家.
禁止任何转移或再出口违反出口管制法律和日本及/或目地国家相关规定.
8.请与瑞萨科技公司对这些材料或产品进一步详情其中所载.
芯片中文手册,看全文,戳
V GS = ±25 V, V DS = 0 V DS = 360 V, V GS = 0 V DS = 400 V, V GS = 0 ID =1毫安,V DS = 10 V ID = 25 A, V GS = 10 V * 1
ID = 25 A, V DS = 10 V * 1 VDS = 10 V, V GS = 0, F = 1兆赫
芯片中文手册,看全文,戳
2SK1521, 2SK1522
绝对最大额定值
(Ta = 25°C)
项目
漏极至源极电压
2SK1521
2SK1522
门源电压
漏极电流
漏电流峰值
身体流失二极管反向漏电流
频道耗散
通道温度
储存温度
注：1.PW
10 µs, 占空比
1%
2.价值在T C = 25°C
符号
ID = 25 A, V GS = 10 V, RL = 1.2
IF = 50 A, V GS = 0
IF = 50 A, V GS = 0, di F/ DT = 100 A /μs的
3
—
远期转移导纳
|yfs|
22
输入电容
Ciss —
输出电容
Coss —
反向传输电容
Crss —
导通延迟时间上升时间关断延迟时间下降时间身体向前漏二极管电压

2SK系列三极管

2SA系列三极管参数2SA1006B SI-P 250V 1.5A 25W 80MHz2SA1009 SI-P 350V 2A 15W |2SA1011 SI-P 160V 1.5A 25W 120MHz2SA1013 SI-P 160V 1A 0.9W 50MHz |2SA1015 SI-P 50V 0.15A 0.4W 80MHz2SA1016 SI-P 100V 0.05A 0.4W 110MHz |2SA1017 SI-P 120V 50mA 0.5W 110MHz2SA1018 SI-P 250V 70mA 0.75W >50MHz |2SA1020 SI-P 50V 2A 0.9W 100MHz2SA1027 SI-P 50V 0.2A 0.25W 100MHz |2SA1029 SI-P 30V 0.1A 0.2W 280MHz2SA1034 SI-P 35V 50mA 0.2W 200MHz |2SA1037 SI-P 50V 0.4A 140MHz FR2SA1048 SI-P 50V 0.15A 0.2W 80MHz |2SA1049 SI-P 120V 0.1A 0.2W 100MHz2SA1061 SI-P 100V 6A 70W 15MHz |2SA1062 SI-N 120V 7A 80W 15MHz2SA1065 SI-P 150V 10A 120W 50MHz |2SA1084 SI-P 90V 0.1A 0.4W 90MHz2SA1103 SI-P 100V 7A 70W 20MHz |2SA1106 SI-P 140V 10A 100W 20MHz2SA1110 SI-P 120V 0.5A 5W 250MHz |2SA1111 SI-P 150V 1A 20W 200MHz2SA1112 SI-P 180V 1A 20W 200MHz |2SA1115 SI-P 50V 0.2A 200MHz UNI2SA1120 SI-P 35V 5A 170MHz |2SA1123 SI-P 150V 50mA 0.75W 200MHz2SA1124 SI-P 150V 50mA 1W 200MHz |2SA1127 SI-P 60V 0.1A 0.4W 200MHz2SA1141 SI-P 115V 10A 100W 90MHz |2SA1142 SI-P 180V 0.1A 8W 180MHz2SA1145 SI-P 150V 50mA 0.8W 200MHz |2SA1150 SI-P 35V 0.8A 0.3W 120MHz2SA1156 SI-P 400V 0.5A 10W POWER |2SA1160 SI-P 20V 2A 0.9W 150MHz2SA1163 SI-P 120V 0.1A 100MHz |2SA1170 SI-P 200V 17A 200W 20MHz2SA1185 SI-P 50V 7A 60W 100MHz |2SA1186 SI-P 150V 10A 100W2SA1200 SI-P 150V 50mA 0.5W 120MHz |2SA1201 SI-P 120V 0.8A 0.5W 120MHz2SA1206 SI-P 15V 0.05A 0.6W |2SA1208 SI-P 180V 0.07A 0.9W |2SA1209 SI-P 180V 0.14A 10W2SA1210 SI-P 200V 0.14A 10W |2SA1213 SI-P 50V 2A 0.5W 120MHz2SA1215 SI-P 160V 15A 150W 50MHz | 2SA1216 SI-P 180V 17A 200W 40MHz2SA1220A SI-P 120V 1.2A 20W 160MHz | 2SA1221 SI-P 160V 0.5A 1W 45MHz2SA1225 SI-P 160V 1.5A 15W 100MHz | 2SA1227A SI-P 140V 12A 120W 60MHz2SA1232 SI-P 130V 10A 100W 60MHz | 2SA1241 SI-P 50V 2A 10W 100MHz2SA1242 SI-P 35V 5A 1W 170MHz |2SA1244 SI-P 60V 5A 20W 60MHz2SA1249 SI-P 180V 1.5A 10W 120MHz | 2SA1261 SI-P 100V 10A 60W POWER2SA1262 SI-P 60V 4A 30W 15MHz |2SA1264N SI-P 120V 8A 80W 30MHz2SA1265N SI-P 140V 10A 100W 30MHz | 2SA1266 SI-P 50V 0.15A 0.4W POWER2SA1268 SI-N 120V 0.1A 0.3W 100MHz | 2SA1270 SI-P 35V 0.5A 0.5W 200MHz2SA1271 SI-P 30V 0.8A 0.6W 120MHz | 2SA1275 SI-P 160V 1A 0.9W 20MHz2SA1282 SI-P 20V 2A 0.9W 80MHz |2SA1283 SI-P 60V 1A 0.9W 85MHz2SA1286 SI-P 30V 1.5A 0.9W 90MHz | 2SA1287 SI-P 50V 1A 0.9W 90MHz2SA1292 SI-P 80V 15A 70W 100MHz | 2SA1293 SI-P 100V 5A 30W 0.2us2SA1294 SI-P 230V 15A 130W |2SA1295 SI-P 230V 17A 200W 35MHz2SA1296 SI-P 20V 2A 0.75W 120MHz | 2SA1298 SI-P 30V 0.8A 0.2W 120MHz2SA1300 SI-P 10V 2A 0.75W 140MHz | 2SA1302 SI-P 200V 15A 150W 25MHz2SA1303 SI-P 150V 14A 125W 50MHz | 2SA1306 SI-P 160V 1.5A 20W2SA1306A SI-P 180V 1.5A 20W 100MHz | 2SA1307 SI-P 60V 5A 20W 0.1us2SA1309 SI-P 30V 0.1A 0.3W 80MHz | 2SA1310 SI-P 60V 0.1A 0.3W 200MHz2SA1315 SI-P 80V 2A 0.9W 0.2us |2SA1317 SI-P 60V 0.2A 0.3W 200MHz | 2SA1318 SI-P 60V 0.2A 0.5W 200MHz2SA1319 SI-P 180V 0.7A 0.7W 120MHz | 2SA1321 SI-P 250V 50mA 0.9W 100MHz2SA1328 SI-P 60V 12A 40W 0.3us |2SA1329 SI-P 80V 12A 40W 0.3us2SA1345 SI-N 50V 0.1A 0.3W 250MHz | 2SA1346 SI-P 50V 0.1A 200MHz2SA1348 SI-P 50V 0.1A 200MHz |2SA1349 P-ARRAY 80V 0.1A 0.4W 1702SA1352 SI-P 200V 0.1A 5W 70MHz | 2SA1357 SI-P 35V 5A 10W 170MHz2SA1358 SI-P 120V 1A 10W 120MHz | 2SA1359 SI-P 40V 3A 10W 100MHz2SA1360 SI-P 150V 50mA 5W 200MHz | 2SA1361 SI-P 250V 50mA 80MHz2SA1370 SI-P 200V 0.1A 1W 150MHz | 2SA1371E SI-P 300V 0.1A 1W 150MHz2SA1376 SI-P 200V 0.1A 0.75W 120MHz | 2SA1380 SI-P 200V 0.1A 1.2W2SA1381 SI-P 300V 0.1A 150MHz |2SA1382 SI-P 120V 2A 0.9W 0.2us2SA1383 SI-P 180V 0.1A 10W 180MHz | 2SA1386 SI-P 160V 15A 130W 40MHz2SA1387 SI-P 60V 5A 25W 80MHz | 2SA1392 SI-P 60V 0.2A 0.4W 200MHz2SA1396 SI-P 100V 10A 30W |2SA1399 SI-P 55V 0.4A 0.9W 150MHz2SA1400 SI-P 400V 0.5A 10W |2SA1403 SI-P 80V 0.5A 10W 800MHz2SA1405 SI-P 120V 0.3A 8W 500MHz | 2SA1406 SI-P 200V 0.1A 7W 400MHz2SA1407 SI-P 150V 0.1A 7W 400MHz | 2SA1413 SI-P 600V 1A 10W 26MHz2SA1428 SI-P 50V 2A 1W 100MHz | 2SA1431 SI-P 35V 5A 1W 170MHz2SA1441 SI-P 100V 5A 25W <300ns |2SA1443 SI-P 100V 10A 30W2SA1450 SI-P 100V 0.5A 0.6W 120MHz | 2SA1451 SI-P 60V 12A 30W 70MHz2SA1460 SI-P 60V 1A 1W <40NS |2SA1470 SI-P 80V 7A 25W 100MHz2SA1475 SI-P 120V 0.4A 15W 500MHz |2SA1477 SI-P 180V 0.14A 10W 150MHz |2SA1488 SI-P 60V 4A 25W 15MHz2SA1489 SI-P 80V 6A 60W 20MHz |2SA1490 SI-P 120V 8A 80W 20MHz2SA1491 SI-P 140V 10A 100W 20MHz |2SA1494 SI-P 200V 17A 200W 20MHz2SA1507 SI-P 180V 1.5A 10W 120MHz |2SA1515 SI-P 40V 1A 0.3W 150MHz2SA1516 SI-P 180V 12A 130W 25MHz |2SA1519 SI-P 50V 0.5A 0.3W 200MHz2SA1535A SI-P 180V 1A 40W 200MHz |2SA1538 SI-P 120V 0.2A 8W 400MHz2SA1539 SI-P 120V 0.3A 8W 400MHz |2SA1540 SI-P 200V 0.1A 7W 300MHz2SA1541 SI-P 200V 0.2A 7W 300MHz |2SA1553 SI-P 230V 15A 150W 25MHz2SA1566 SI-N 120V 0.1A 0.15W 130MHz |2SA1567 SI-P 50V 12A 35W 40MHz2SA1568 SI-P 60V 12A 40W | 2SA1577 SI-P 32V 0.5A 0.2W 200MHz2SA1593 SI-P 120V 2A 15W 120MHz |2SA1601 SI-P 60V 15A 45W2SA1606 SI-P 180V 1.5A 15W 100MHz | 2SA1615 SI-P 30V 10A 15W 180MHz 2SA1624 SI-P 300V 0.1A 0.5W 70MHz | 2SA1625 SI-P 400V 0.5A 0.75W2SA1626 SI-P 400V 2A 1W 0.5/2.7us |2SA1633 SI-P 150V 10A 100W 20MHz2SA1643 SI-P 50V 7A 25W 75MHz |2SA1667 SI-P 150V 2A 25W 20MHz2SA1668 SI-P 200V 2A 25W 20MHz |2SA1670 SI-P 80V 6A 60W 20MHz2SA1671 SI-P 120/120V 8A 75W 20MHz |2SA1672 SI-P 140V 10A 80W 20MHz2SA1673 SI-P 180V 15A 85W 20MHz |2SA1680 SI-P 60V 2A 0.9W 100/400ns2SA1684 SI-P 120V 1.5A 20W 150MHz |2SA1694 SI-P 120/120V 8A 80W 20MHz2SA1695 SI-P 140V 10A 80W 20MHz |2SA1703 SI-P 30V 1.5A 1W 180MHz2SA1706 SI-P 60V 2A 1W |2SA1708 SI-P 120V 1A 1W 120MHz2SA1726 SI-P 80V 6A 50W 20MHz |2SA1776 SI-P 400V 1A 1W2SA1803 SI-P 80V 6A 55W 30MHz |2SA1837 SI-P 230V 1A 20W 70MHz2SA1962 SI-P 230V 15A 130W 25MHz2SA329 GE-P 15V 10mA 0.05W |2SA467 SI-P 40V 0,4A 0,3W2SA473 SI-P 30V 3A 10W 100MHz | 2SA483 SI-P 150V 1A 20W 9MHz2SA493 SI-P 50V 0.05A 0.2W 80MHz | 2SA495 SI-P 35V 0.1A 0.2W 200MHz2SA562 SI-P 30V 0.5A 0.5W 200MHz | 2SA566 SI-P 100V 0.7A 10W 100MHz2SA608 SI-N 40V 0.1A 0.1W 180MHz | 2SA614 SI-P 80V 1A 15W 30MHz2SA620 SI-P 30V 0.05A 0.2W 120MHz | 2SA626 SI-P 80V 5A 60W 15MHz2SA628 SI-P 30V 0.1A 100MHz |2SA639 SI-P 180V 50mA 0,25W2SA642 SI-P 30V 0.2A 0.25W 200MHz | 2SA643 SI-P 40V 0.5A 0.5W 180MHz2SA653 SI-P 150V 1A 15W 5MHz | 2SA684 SI-P 60V 1A 1W 200MHz2SA699 SI-P 40V 2A 10W 150MHz | 2SA708A SI-P 100V 0.7A 0.8W 50MHz2SA720 SI-P 60V 0.5A 0.6W 200MHz | 2SA725 SI-P 35V 0.1A 0.15W 100MHz2SA733 SI-P 60V 0.15A 0.25W 50MHz | 2SA738 SI-P 25V 1.5A 8W 160MHz2SA747 SI-P 120V 10A 100W 15MHz | 2SA756 SI-P 100V 6A 50W 20MHz2SA762 SI-P 110V 2A 23W 80MHz | 2SA765 SI-P 80V 6A 40W 10MHz2SA768 SI-P 60V 4A 30W 10MHz | 2SA769 SI-P 80V 4A 30W 10MHz2SA770 SI-P 60V 6A 40W 10MHz | 2SA771 SI-P 80V 6A 40W 2MHz2SA777 SI-P 80V 0.5A 0.75W 120MHz | 2SA778A SI-P 180V 0.05A 0.2W 60MHz2SA781 SI-P 20V 0.2A 0.2W <80/16 |2SA794 SI-P 100V 0.5A 5W 120MHz2SA794A SI-P 120V 0.5A 5W 120MHz | 2SA812 SI-P 50V 0.1A 0.15W2SA814 SI-P 120V 1A 15W 30MHz | 2SA816 SI-P 80V 0.75A 1.5W 100MHz2SA817 SI-P 80V 0.3A 0.6W 100MHz | 2SA817A SI-P 80V 0.4A 0.8W 100MHz2SA838 SI-P 30V 30mA 0.25W 300MHz2SA839 SI-P 150V 1.5A 25W 6MHz |2SA841 SI-P 60V 0.05A 0.2W 140MHz2SA858 SI-P 150V 50mA 0.5W 100MHz |2SA872 SI-P 90V 0.05A 0.2W 120MHz2SA872A SI-P 120V 50mA 0.3W 120MHz |2SA884 SI-P 65V 0.2A 0.27W 140MHz2SA885 SI-P 45V 1A 5W 200MHz |2SA886 SI-P 50V 1.5A 1.2W2SA893 SI-P 90V 50mA 0.3W | 2SA900 SI-P 18V 1A 1.2W2SA914 SI-P 150V 0.05A 200MHz |2SA915 SI-P 120V 0.05A 0.8W 80MHz2SA916 SI-P 160V 0.05A 1W 80MHz |2SA921 SI-P 120V 20mA 0.25W 200MHz2SA933 SI-P 50V 0.1A 0.3W | 2SA934 SI-P 40V 0.7A 0.75W2SA935 SI-P 80V 0.7A 0.75W 150MHz |2SA937 SI-P 50V 0.1A 0.3W 140MHz2SA940 SI-P 150V 1.5A 25W 4MHz |2SA941 SI-P 120V 0.05A 0.3W 150MHz2SA949 SI-P 150V 50mA 0.8W 120MHz |2SA965 SI-P 120V 0.8A 0.9W 120MHz2SA966 SI-P 30V 1.5A 0.9W 120MHz |2SA968 SI-P 160V 1.5A 25W 100MHz2SA970 SI-P 120V 0.1A 100MHz |2SA982 SI-P 140V 8A 80W 20MHz2SA984 SI-P 60V 0.5A 0.5W 120MHz |2SA985 SI-P 120V 1.5A 25W 180MHz2SA988 SI-P 120V 0.05A 0.5W |2SA991 SI-P 60V 0.1A 0.5W 90MHz2SA992 SI-P 100V 0.05A 0.2W |2SA995 SI-P 100V 0.05A 0.4W 100MHz2SB系列三极管参数2SB1009 SI-P 40V 2A 10W 100MHz | 2SB1010 SI-P 40V 2A 0.75W 100MHz2SB1012K P-DARL 120V 1.5A 8W | 2SB1013 SI-P 20V 2A 0.7W2SB1015 SI-P 60V 3A 25W 0.4us | 2SB1016 SI-P 100V 5A 30W 5MHz2SB1017 SI-P 80V 4A 25W 9MHz | 2SB1018 SI-P 100V 7A 30W 0.4us2SB1020 P-DARL+D 100V 7A 30W 0.8us | 2SB1023 P-DARL+D 60V 3A 20W B=5K 2SB1035 SI-P 30V 1A 0.9W 100MHz | 2SB1039 SI-P 100V 4A 40W 20MHz2SB1050 SI-P 30V 5A 1W 120MHz | 2SB1055 SI-P 120V 6A 70W 20MHz2SB1065 SI-P 60V 3A 10W | 2SB1066 SI-P 50V 3A 1W 70MHz2SB1077 P-DARL 60V 4A 40W B>1K | 2SB1086 SI-P 160V 1.5A 20W 50MHz2SB1098 P-DARL+D 100V 5A 20W B=80 | 2SB1099 P-DARL+D 100V 8A 25W B=6K 2SB1100 P-DARL+D 100V 10A 30W B=6 | 2SB1109 SI-P 160V 0.1A 1.25W2SB1109S SI-P 160V 0.1A 1.25W | 2SB1117 SI-P 30V 3A 1W 280MHz2SB1120 SI-P 20V 2.5A 0.5W 250MHz | 2SB1121T SI-P 30V 2A 150MHz2SB1123 SI-P 60V 2A 0.5W 150MHz | 2SB1132 SI-P 40V 1A 0.5W 150MHz2SB1133 SI-P 60V 3A 25W 40MHz | 2SB1134 SI-P 60V 5A 25W 30W2SB1135 SI-P 60V 7A 30W 10MHz | 2SB1136 SI-P 60V 12A 30W 10MHz2SB1140 SI-P 25V 5A 10W 320MHz | 2SB1141 SI-P 20V 1.2A 10W 150MHz2SB1143 SI-P 60V 4A 10W 140MHz | 2SB1146 P-DARL 120V 6A 25W2SB1149 P-DARL 100V 3A 15W B=10K | 2SB1151 SI-P 60V 5A 20W2SB1154 SI-P 130V 10A 70W 30MHz | 2SB1156 SI-P 130V 20A 100W2SB1162 SI-P 160V 12A 120W | 2SB1163 SI-P 170V 15A 150W2SB1166 SI-P 60V 8A 20W 130MHz | 2SB1168 SI-P 120V 4A 20W 130MHz2SB1182 SI-P 40V 2A 10W 100MHz | 2SB1184 SI-P 60V 3A 15W 70MHz2SB1185 SI-P 50V 3A 25W 70MHz | 2SB1186 SI-P 120V 1.5A 20W 50MHz2SB1187 SI-P 80V 3A 35W | 2SB1188 SI-P 40V 2A 100MHz2SB1202 SI-P 60V 3A 15W 150MHz | 2SB1203 SI-P 60V 5A 20W 130MHz2SB1204 SI-P 60V 8A 20W 130MHz | 2SB1205 SI-P 25V 5A 10W 320MHz2SB1212 SI-P 160V 1.5A 0.9W 50MHz | 2SB1223 P-DARL+D 70V 4A 20W 20MHz2SB1236 SI-P 120V 1.5A 1W 50MHz | 2SB1237 SI-P 40V 1A 1W 150MHz2SB1238 SI-P 80V 0.7A 1W 100MHz | 2SB1240 SI-P 40V 2A 1W 100MHz2SB1243 SI-P 60V 3A 1W | 2SB1254 P-DARL 160V 7A 70W2SB1255 P-DARL 160V 8A 100W B>5K | 2SB1258 P-DARL+D 100V 6A 30W B>1K 2SB1274 SI-P 60V 3A 30W 100MHz | 2SB1282 P-DARL+D 100V 4A 25W 50MHz 2SB1292 SI-P 80V 5A 30W | 2SB1302 SI-P 25V 5A 320MHz2SB1318 P-DARL+D 100V 3A 1W B>200 | 2SB1326 SI-P 30V 5A 0.3W 120MHz2SB1329 SI-P 40V 1A 1.2W 150MHz | 2SB1330 SI-P 32V 0.7A 1.2W 100MHz2SB1331 SI-P 32V 2A 1.2W 100MHz | 2SB1353E SI-P 120V 1.5A 1.8W 50MHz2SB1361 SI-P 150V 9A 100W 15MHz | 2SB1370 SI-P 60V 3A 30W 15MHz2SB1373 SI-P 160V 12A 2.5W 15MHz | 2SB1375 SI-P 60V 3A 25W 9MHz2SB1382 P-DARL+D 120V 16A 75W B>2 | 2SB1393 SI-P 30V 3A 2W 30MHz2SB1420 SI-P 120V 16A 80W 50MHz | 2SB1425 SI-P 20V 2A 1W 90MHz2SB1429 SI-P 180V 15A 150W 10MHz | 2SB1434 SI-P 50V 2A 1W 110MHz2SB1468 SI-P 60/30V 12A 25W | 2SB1470 P-DARL 160V 8A 150W B>5K2SB1490 P-DARL 160V 7A 90W B>5K | 2SB1493 P-DARL 160/140V 7A 70W 202SB1503 P-DARL 160V 8A 120W B>5K | 2SB1556 P-DARL 140V 8A 120W B>5K2SB1557 P-DARL 140V 7A 100W B>5K | 2SB1559 P-DARL 160V 8A 80W B>5K2SB1560 P-DARL 160V 10A 100W 50MHz | 2SB1565 SI-P 80V 3A 25W 15MHz2SB1587 P-DARL+D 160V 8A 70W B>5K | 2SB1624 P-DARL 110V 6A 60W B>5K2SB206 GE-P 80V 30A 80W | 2SB324 GE-P 32V 1A 0.25W2SB337 GE-P 50V 7A 30W LF-POWER | 2SB407 GE-P 30V 7A 30W2SB481 GE-P 32V 1A 6W 15KHz | 2SB492 GE-P 25V 2A 6W2SB527 SI-P 110V 0.8A 10W 70MHz | 2SB531 SI-P 90V 6A 50W 8MHz2SB536 SI-P 130V 1.5A 20W 40MHz | 2SB537 SI-P 130V 1.5A 20W 60MHz2SB541 SI-P 110V 8A 80W 9MHz | 2SB544 SI-P 25V 1A 0.9W 180MHz2SB546A SI-P 200V 2A 25W 5MHz | 2SB549 SI-P 120V 0.8A 10W 80MHz2SB557 SI-P 120V 8A 80W | 2SB560 SI-P 100V 0.7A 0.9W 100MHz2SB561 SI-P 25V 0.7A 0.5W | 2SB564 SI-P 30V 1A 0.8W2SB598 SI-P 25V 1A 0.5W 180MHz | 2SB600 SI-P 200V 15A 200W 4MHz2SB601 P-DARL 100V 5A 30W | 2SB605 SI-P 60V 0.7A 0.8W 120MHz2SB621 SI-N 25V 1.5A 0.6W 200MHz | 2SB621A SI-N 50V 1A 0.75W 200MHz2SB631 SI-P 100V 1A 8W | 2SB632 SI-P 25V 2A 10W 100MHz2SB633 SI-P 100V 6A 40W 15MHz | 2SB637 SI-P 50V 0.1A 0.3W 200MHz2SB641 SI-P 30V 0.1A 120MHz | 2SB647 SI-P 120V 1A 0.9W 140MHz2SB649A SI-P 160V 1.5A 1W 140MHz | 2SB656 SI-P 160V 12A 125W 20MHz2SB673 P-DARL+D 100V 7A 40W 0.8us | 2SB676 P-DARL 100V 4A 30W 0.15us2SB681 SI-N 150V 12A 100W 13MHz | 2SB688 SI-P 120V 8A 80W 10MHz2SB700 SI-P 160V 12A 100W | 2SB703 SI-P 100V 4A 40W 18MHz2SB705 SI-P 140V 10A 120W 17MHz | 2SB707 SI-P 80V 7A 40W POWER2SB709 SI-P 45V 0.1A 0.2W 80MHz | 2SB716 SI-P 120V 0.05A 0.75W2SB720 SI-P 200V 2A 25W 100MHz | 2SB727 P-DARL+D 120V 6A 50W B>1K2SB731 SI-P 60V 1A 10W 75MHz | 2SB733 SI-P 20V 2A 1W >50MHz2SB734 SI-P 60V 1A 1W 80MHz | 2SB739 SI-P 20/16V 2A 0.9W 80MHz2SB740 SI-P 70V 1A 0.9W | 2SB744 SI-P 70V 3A 10W 45MHz2SB750 P-DARL+D 60V 2A 35W B>100 | 2SB753 SI-P 100V 7A 40W 0.4us2SB764 SI-P 60V 1A 0.9A 150MHz | 2SB765 P-DARL+D 120V 3A 30W B>1K2SB766 SI-P 30V 1A 200MHz | 2SB772 SI-P 40V 3A 10W 80MHz2SB774 SI-P 30V 0.1A 0.4W 150MHz | 2SB775 SI-P 100V 6A 60W 13MHz2SB776 SI-P 120V 7A 70W 15MHz | 2SB788 SI-P 120V 0.02A 0.4W 150MHz2SB791 P-DARL+D 120V 8A 40W B>10 | 2SB794 P-DARL+D 60V 1.5A 10W B=7 2SB795 P-DARL+D 80V 1.5A 10W B<3 | 2SB808 SI-P 20V 0.7A 0.25W 250MHz2SB810 SI-P 30V 0.7A 0.35W 160MHz | 2SB815 SI-P 20V 0.7A 0.25W 250MHz2SB816 SI-P 150V 8A 80W 15MHz | 2SB817 SI-P 160V 12A 100W2SB817F SI-P 160V 12A 90W 15MHz | 2SB819 SI-P 50V 1.5A 1W 150MHz2SB822 SI-P 40V 2A 0.75W 100MHz | 2SB824 SI-P 60V 5A 30W 30 MHz2SB825 SI-P 60V 7A 40W 10MHz | 2SB826 SI-P 60V 12A 40W 10MHz2SB827 SI-P 60V 7A 80W 10MHz | 2SB828 SI-P 60V 12A 80W 10MHz2SB829 SI-P 60V 15A 90W 20MHz | 2SB857 SI-P 50V 4A 40W NF/S-L2SB861 SI-P 200V 2A 30W | 2SB863 SI-P 140V 10A 100W 15MHz2SB865 P-DARL 80V 1.5A 0.9W | 2SB873 SI-P 30V 5A 1W 120MHz2SB882 P-DARL+D 70V 10A 40W B>5K | 2SB883 P-DARL+D 70V 15A 70W B=5K 2SB884 P-DARL 110V 3A 30W B=4K | 2SB885 P-DARL+D 110V 3A 35W B=4K 2SB891 SI-P 40V 2A 5W 100MHz | 2SB892 SI-P 60V 2A 1W2SB895A P-DARL 60V 1A B=8000 | 2SB897 P-DARL+D 100V 10A 80W B>12SB908 P-DARL+D 80V 4A 15W 0.15us | 2SB909 SI-P 40V 1A 1W 150MHz2SB922 SI-P 120V 12A 80W 20MHz | 2SB926 SI-P 30V 2A 0.75W2SB938A P-DARL+D 60V 4A 40W B>1K | 2SB940 SI-P 200V 2A 35W 30MHz2SB941 SI-P 60V 3A 35W POWER | 2SB945 SI-P 130V 5A 40W 30MHz2SB946 SI-P 130V 7A 40W 30MHz | 2SB950A P-DARL+D 80V 4A 40W B>1K 2SB953A SI-P 50V 7A 30W 150MHz | 2SB955 P-DARL+D 120V 10A 50W B=4 2SB975 P-DARL+D 100V 8A 40W B>6K | 2SB976 SI-P 27V 5A 0.75W 120MHz 2SB985 SI-P 60V 3A 1W 150MHz | 2SB986 SI-P 60V 4A 10W 150MHz2SB988 SI-P 60V 3A 30W <400/22002SC系列三极管参数2SC1000 SI-N 55V 0.1A 0.2W 80MHz2SC1008 SI-N 80V 0.7A 0.8W 75MHz | 2SC1012A SI-N 250V 60mA 0.75W >80MHz 2SC1014 SI-N 50V 1.5A 7W | 2SC1017 SI-N 75V 1A 60mW 120MHz2SC1030 SI-N 150V 6A 50W | 2SC1046 SI-N 1000V 3A 25W2SC1047 SI-N 30V 20mA 0.4W 650MHz | 2SC1050 SI-N 300V 1A 40W2SC1051 SI-N 150V 7A 60W 8MHz | 2SC1061 SI-N 50V 3A 25W 8MHz=H1062SC1070 SI-N 30V 20mA 900MHz | 2SC1080 SI-N 110V 12A 100W 4MHz2SC109 SI-N 50V 0.6A 0.6W | 2SC1096 SI-N 40V 3A 10W 60MHz2SC1106 SI-N 350V 2A 80W | 2SC1114 SI-N 300V 4A 100W 10MHz2SC1115 SI-N 140V 10A 100W 10MHz | 2SC1116 SI-N 180V 10A 100W 10MHz2SC1161 SI-P 160V 12A 120W | 2SC1162 SI-N 35V 1.5A 10W 180MHz2SC1172 SI-N 1500V 5A 50W | 2SC1195 SI-N 200V 2.5A 100W2SC1213C SI-N 50V 0.5A 0.4W UNI | 2SC1214 SI-N 50V 0.5A 0.6W 50MHz2SC1215 SI-N 30V 50mA 0.4W 1.2GHZ | 2SC1216 SI-N 40V 0.2A 0.3W <20/402SC1226 SI-N 40/50V 2A 10W 150MHz | 2SC1238 SI-N 35V 0.15A 5W 1.7GHz2SC1247A SI-N 50V 0.5A 0.4W 60MHz | 2SC1308 SI-N 1500V 7A 50W2SC1312 SI-N 35V 0.1A 0.15W 100MHz | 2SC1318 SI-N 60V 0.5A 0.6W 200MHz2SC1343 SI-N 150V 10A 100W 14MHz | 2SC1345 SI-N 55V 0.1A 0.1W 230MHz2SC1359 SI-N 30V 30mA 0.4W 250MHz | 2SC1360 SI-N 50V 0.05A 1W >300MHz 2SC1362 SI-N 50V 0.2A 0.25W 140MHz | 2SC1368 SI-N 25V 1.5A 8W 180MHz2SC1382 SI-N 80V 0.75A 5W 100MHz | 2SC1384 SI-N 60V 1A 1W 200MHz2SC1393 SI-N 30V 20mA 250 mW 700MHz | 2SC1398 SI-N 70V 2A 15W2SC1413A SI-N 1200V 5A 50W | 2SC1419 SI-N 50V 2A 20W 5MHz2SC1426 SI-N 35V 0.2A 2.7GHz | 2SC1431 SI-N 110V 2A 23W 80MHz2SC1432 N-DARL 30V 0.3A 0.3W B=40 | 2SC1439 SI-N 150V 50mA 0.5W 130MHz 2SC1445 SI-N 100V 6A 40W 10MHz | 2SC1446 SI-N 300V 0.1A 10W 55MHz2SC1447 SI-N 300V 0.15A 20W 80MHz | 2SC1448 SI-N 150V 1.5A 25W 3MHz2SC1449 SI-N 40V 2A 5W 60MHz | 2SC1450 SI-N 150V 0.4A 20W2SC1454 SI-N 300V 4A 50W 10MHz | 2SC1474-4 SI-N 20V 2A 0.75W 80MHz2SC1501 SI-N 300V 0.1A 10W 55MHz | 2SC1505 SI-N 300V 0.2A 15W2SC1507 SI-N 300V 0.2A 15W 80MHz | 2SC1509 SI-N 80V 0.5A 1W 120MHz2SC1515 SI-N 200V 0.05A 0.2W 110MHz | 2SC1520 SI-N 300V 0.2A 12,5W2SC1545 N-DARL 40V 0.3A 0.3W B=1K | 2SC1567 SI-N 100V 0.5A 5W 120MHz2SC1570 SI-N 55V 0.1A 0.2W 100MHz | 2SC1571 SI-N 40V 0.1A 0.2W 100MHz2SC1573 SI-N 200V 0.1A 1W 80MHz | 2SC1577 SI-N 500V 8A 80W 7MHz2SC1583 SI-N 50V 0.1A 0.4W 100MHz | 2SC1619 SI-N 100V 6A 50W 10MHz2SC1623 SI-N 60V 0.1A 0.2W 250MHz | 2SC1624 SI-N 120V 1A 15W 30MHz2SC1627 SI-N 80V 0.4A 0.8W 100MHz | 2SC1674 SI-N 30V .02A 600MC RF/IF2SC1675 SI-N 50V .03A 0.25W | 2SC1678 SI-N 65V 3A 3W2SC1685 SI-N 60V 0.1A 150MC UNI | 2SC1688 SI-N 50V 30mA 0.4W 550MHz2SC1708A SI-N 120V 50mA 0.2W 150MHz | 2SC1729 SI-N 35V 3.5A 16W 500MHz 2SC1730 SI-N 30V 0.05A 1.1GHz UHF | 2SC1740 SI-N 40V 100mA 0.3W2SC1741 SI-N 40V 0.5A 0.3W 250MHz | 2SC1756 SI-N 300V 0.2A >50MHz2SC1760 SI-N 100V 1A 7.9W 80MHz | 2SC1775A SI-N 120V 0.05A 0.2W UNI2SC1781 SI-N 50V 0.5A 0.35W | 2SC1815 SI-N 50V 0.15A 0.4W 80MHz2SC1815BL SI-N 60V 0.15A 0.4W B>350 | 2SC1815GR SI-N 60V 0.15A 0.4W B>200 2SC1815Y SI-N 60V 0.15A 0.4W B>120 | 2SC1827 SI-N 100V 4A 30W 10MHz2SC1832 N-DARL 500V 15A 150W B>10 | 2SC1841 SI-N 120V 0.05A 0.5W2SC1844 SI-N 60V 0.1A 0.5W 100MHz | 2SC1845 SI-N 120V 0.05A 0.5W2SC1846 SI-N 120V 0.05A 0.5W | 2SC1847 SI-N 50V 1.5A 1.2W2SC1855 SI-N 20V 20mA 0.25W 550MHz | 2SC1871 SI-N 450V 15A 150W <1/3us2SC1879 N-DARL+D 120V 2A 0.8W B>1 | 2SC1890 SI-N 90V 0.05A 0.3W 200MHz 2SC1895 SI-N 1500V 6A 50W 2MHz | 2SC1906 SI-N 19V 0.05A 0.3W2SC1907 SI-N 30V 0.05A 1100MHz | 2SC1913 SI-N 150V 1A 15W 120MHz2SC1914 SI-N 90V 50mA 0.2W 150MHz | 2SC1921 SI-N 250V 0.05A 0.6W2SC1922 SI-N 1500V 2.5A 50W | 2SC1923 SI-N 30V 20mA 10mW 550MHz2SC1929 SI-N 300V 0.4A 25W 80MHz | 2SC1941 SI-N 160V 50mA 0.8W2SC1944 SI-N 80V 6A PQ=16W | 2SC1945 SI-N 80V 6A 20W2SC1946A SI-N 35V 7A 50W | 2SC1947 SI-N 35V 1A 4W/175MHz2SC1953 SI-N 150V 0.05A 1.2W 70MHz | 2SC1957 SI-N 40V 1A 1.8W/27MHz2SC1959 SI-N 30V 0.5A 0.5W 200MHz | 2SC1967 SI-N 35V 2A 8W 470MHz2SC1968 SI-N 35V 5A 3W 470MHz | 2SC1969 SI-N 60V 6A 20W2SC1970 SI-N 40V 0.6A 5W | 2SC1971 SI-N 35V 2A 12.5W2SC1972 SI-N 35V 3.5A 25W | 2SC1975 SI-N 120V 2A 3.8W 50MHz2SC1980 SI-N 120V 20mA 0.25W 200MHz | 2SC1984 SI-N 100V 3A 30W B=7002SC1985 SI-N 80V 6A 40W 10MHz | 2SC2023 SI-N 300V 2A 40W 10MHz2SC2026 SI-N 30V 0.05A 0.25W | 2SC2027 SI-N 1500/800V 5A 50W2SC2036 SI-N 80V 1A PQ=1..4W | 2SC2053 SI-N 40V 0.3A 0.6W 500MHz2SC2055 SI-N 18V 0,3A 0,5W | 2SC2058 SI-N 40V 0.05A 0.25W2SC2060 SI-N 40V 0.7A 0.75W 150MHz | 2SC2061 SI-N 80V 1A 0.75W 120MHz2SC2068 SI-N 300V 0.05A 95MHz | 2SC2073 SI-N 150V 1.5A 25W 4MHz2SC2078 SI-N 80V 3A 10W 150MHz | 2SC2086 SI-N 75V 1A 0.45W/27MHz2SC2092 SI-N 75V 3A 5W 27MHz | 2SC2094 SI-N 40V 3.5A PQ>15W 175MHz 2SC2097 SI-N 50V 15A PQ=85W | 2SC2120 SI-N 30V 0.8A 0.6W 120MHz2SC2122 SI-N 800V 10A 50W | 2SC2166 SI-N 75V 4A 12.5W RFPOWER2SC2168 SI-N 200V 2A 30W 10MHz | 2SC2200 SI-N 500V 7A 40W 1US2SC2209 SI-N 50V 1.5A 10W 150MHz | 2SC2216 SI-N 45V 50mA 0.3W 300MHz2SC2243日本富士通公司Si-NPN 450V 5A<1MHZ 或者未知工作频率BU326 BU526 BU626ABUW71 BUX44 BUX45 TIP57A TIP58A 3DK308B2SC2244日本富士通公司Si-NPN450V8A<1MHZ 或者未知工作频率BU526 BU626A BUW72 BUX15 BUX44 TIP57A TIP58A 3DK308B2SC2245日本富士通公司Si-NPN450V10A<1MHZ 或者未知工作频率BU526 BU626A BUW24 BUX25 BUW26 BUW34 BUW35 BUW36 BUW72 3DK308B BU415 BU626A BUV25 BUW44 BUX25 2SD396 2SD641 3DK308B BUT56(A)BUX64 MJE53T2SC1865 2SC22002SC2248日本富士通公司Si-NPN450V8A<1MHZ或者未知工作频率BUT56(A)BUX64BUY65MJE130063DK306B 2SC2249日本富士通公司Si-NPN250V30A<1MHZ或者未知工作频率2SC13012SC18732SC22042SC22202SC24422SC24452SD6433DK210E 2SC225日本富士通公司Si-NPN80V1A150MHZBD139BD169BD179BD237BD4412SC1253DK30C2SC2250日本富士通公司Si-NPN450V30A<1MHZ或者未知工作频率2SC13002SC14702SC18742SC22042SC22202SC24423DK210F 2SC2251日本富士通公司Si-NPN45V0.5A900MHZBLX973DA392SC2253日本富士通公司Si-NPN45V2A900MHZ3DA23B2SC2254日本富士通公司Si-NPN45V4A900MHZ3DA100B 2SC2255日本富士通公司Si-NPN45V6A900MHZ2SC20443DA6B2SC2256日本三肯公司Si-NPN200V15A10MHZBDW16BUX11BUX412SC2019 2SD552 2SD583 3DK209D2SC2257未知生产厂家Si-NPN180V0.05A80MHZBF415BF458BF459BF469BF4712SC2257A日本松下公司Si-NPN220V0.05A80MHZBF415BF458BF459BF469BF4713DA87CBF415BF417BF458BF459BF460BF469BF7572SC34173DA87C3DA151DBF417BF459BF8502SC34172SC34182SC2228 SI-N 160V 0.05A 0.75W >50 | 2SC2229 SI-N 200V 50mA 0.8W 120MHz2SC2230 SI-N 200V 0.1A 0.8W 50MHz | 2SC2233 SI-N 200V 4A 40W 8MHz2SC2235 SI-N 120V 0.8A 0.9W 120MHz | 2SC2236 SI-N 30V 1.5A 0.9W 120MHz2SC2237 SI-N 35V 2A PQ>7.5W 175MHz | 2SC2238 SI-N 160V 1.5A 25W 100MHz2SC2240 SI-N 120V 50mA .3W 100MHz | 2SC2261 SI-N 180V 8A 80W 15MHz2SC2267 SI-N 400/360V 0.1A 0.4W | 2SC2270 SI-N 50V 5A 10W 100MHz2SC2271 SI-N 300V 0.1A 0.9W 50MHz | 2SC2275 SI-N 120V 1.5A 25W 200MHz2SC2283 SI-N 38V 0.75A 2.8W(500MHz | 2SC2287 SI-N 38V 1.5A 7.1W 175MHz2SC2295 SI-N 30V 0.03A 0.2W 250MHz | 2SC2307 SI-N 500V 12A 100W 18MHz2SC2308 SI-N 55V 0.1A 0.2W 230MHz | 2SC2310 SI-N 55V 0.1A 0.2W 230MHz2SC2312 SI-N 60V 6A 18.5W/27MHz | 2SC2314 SI-N 45V 1A 5W2SC2320 SI-N 50V 0,2A 0,3W | 2SC2329 SI-N 38V 0.75A 2W 175MHz2SC2331 SI-N 150V 2A 15W POWER | 2SC2333 SI-N 500/400V 2A 40W2SC2334 SI-N 150V 7A 40W POWER | 2SC2335 SI-N 500V 7A 40W POWER2SC2336B SI-N 250V 1.5A 25W 95MHz | 2SC2344 SI-N 180V 1.5A 25W 120MHz2SC2347 SI-N 15V 50mA 250mW 650MHz | 2SC2362 SI-N 120V 50mA 0.4W 130MHz 2SC2363 SI-N 120V 50mA 0.5W 130MHz | 2SC2365 SI-N 600V 6A 50W POWER2SC2369 SI-N 25V 70mA 0.25W 4.5GHz | 2SC2383 SI-N 160V 1A 0.9W 100MHz2SC2389 SI-N 120V 50mA 0.3W 140MHz | 2SC2407 SI-N 35V 0.15A 0.16W 500MHz 2SC2412 SI-N 50V 0.1A 180MHz | 2SC2433 SI-N 120V 30A 150W 80MHz2SC2440 SI-N 450V 5A 40W | 2SC2458 SI-N 50V 0.15A 0.2W 80MHz2SC2466 SI-N 30V 0.05A 2.2GHz | 2SC2482 SI-N 300V 0.1A 0.9W 50MHz2SC2485 SI-N 100V 6A 70W 15MHz | 2SC2486 SI-N 120V 7A 80W 15MHz2SC2491 SI-N 100V 6A 40W 15MHz | 2SC2497 SI-N 70V 1.5A 5W 150MHz2SC2498 SI-N 30V 0.05A 0.3W 3.5GHz | 2SC2508 SI-N 40V 6A 50W 175MHz2SC2510 SI-N 55V 20A 250W(28MHz) | 2SC2512 SI-N 30V 50mA 900MHz TUNE2SC2516 SI-N 150V 5A 30W <0.5/2us | 2SC2517 SI-N 150V 5A 30W <0.5/2us2SC2538 SI-N 40V 0.4A 0.7W | 2SC2539 SI-N 35V 4A 17W 175MHz2SC2542 SI-N 450V 5A 40W | 2SC2547 SI-N 120V 0.1A 0.4W2SC2551 SI-N 300V 0.1A 0.4W 80MHz | 2SC2552 SI-N 500V 2A 20W2SC2553 SI-N 500V 5A 40W 1us | 2SC2562 SI-N 60V 5A 25W 0.1us2SC2563 SI-N 120V 8A 80W 90MHz | 2SC2570A SI-N 25V 70mA 0.6W2SC2579 SI-N 160V 8A 80W 20MHz | 2SC2581 SI-N 200V 10A 100W2SC2590 SI-N 120V 0.5A 5W 250MHz | 2SC2592 SI-N 180V 1A 20W 250MHz2SC2603 SI-N 50V 0.2A 0.3W | 2SC2610 SI-N 300V 0.1A 0.8W 80MHz2SC2611 SI-N 300V 0.1A 0.8W 80MHz | 2SC2621E SI-N 300V 0.2A 10W >50MHz2SC2625 SI-N 450V 10A 80W | 2SC2630 SI-N 35V 14A 100W2SC2631 SI-N 150V 50mA 0,75W 160MHz | 2SC2632 SI-N 150V 50mA 1W 160MHz 2SC2634 SI-N 60V 0.1A 0.4W 200MHz | 2SC2653 SI-N 350V 0.2A 15W >50MHz2SC2654 SI-N 40V 7A 40W | 2SC2655 SI-N 50V 2A 0.9W 0.1us2SC2656 SI-N 450V 7A 80W <1.5/4.5 | 2SC2660 SI-N 200V 2A 30W 30MHz2SC2668 SI-N 30V 20mA 0.1W 550MHz | 2SC2671 SI-N 15V 80mA 0.6W 5.5GHz2SC2682 SI-N 180V 0.1A 8W 180MHz | 2SC2690 SI-N 120V 1.2A 20W 160MHz2SC2694 SI-N 35V 20A 140W | 2SC2705 SI-N 150V 50mA 0.8W 200MHz2SC2706 SI-N 140V 10A 100W 90MHz | 2SC2712 SI-N 50V 0.15A 0.15W 80MHz2SC2714 SI-N 30V 20mA 0.1W 550MHz | 2SC2717 SI-N 30V 50mA 0.3W 300MHz2SC2724 SI-N 30V 30mA 200MHz | 2SC2749 SI-N 500V 10A 100W 50MHz2SC2750 SI-N 150V 15A 100W POWER | 2SC2751 SI-N 500V 15A 120W 50MHz2SC2752 SI-N 500V 0.5A 10W <1/3.5 | 2SC2753 SI-N 17V 0.07A 0.3W 5GHz2SC2759 SI-N 30V 50mA 0.2W 2.3GHz | 2SC2786 SI-N 20V 20mA 600MHz2SC2792 SI-N 850V 2A 80W | 2SC2793 SI-N 900V 5A 100W2SC2802 SI-N 300V 0.2A 10W 80MHz | 2SC2808 SI-N 100V 50mA 0.5W 140MHz2SC2810 SI-N 500V 7A 50W 18MHz | 2SC2812 SI-N 55V 0.15A 0.2W 100MHz2SC2814 SI-N 30V 0.03A 320MHz F | 2SC2825 SI-N 80V 6A 70W B>5002SC2837 SI-N 150V 10A 100W 70MHz | 2SC2839 SI-N 20V 30mA 0.15W 320MHz 2SC2851 SI-N 36V 0.3A 1W 1.5GHz | 2SC2873 SI-N 50V 2A 0.5W 120MHz2SC2878 SI-N 20V 0.3A 0.4W 30MHz | 2SC2879 SI-N 45V 25A PEP=100W 28MHz 2SC2882 SI-N 90V 0.4A 0.5W 100MHz | 2SC288A SI-N 35V 20mA 0.15W2SC2898 SI-N 500V 8A 50W | 2SC2901 SI-N 40V 0.2A 0.6W <12/182SC2908 SI-N 200V 5A 50W 50MHz | 2SC2910 SI-N 160V 70mA 0.9W 150MHz2SC2911 SI-N 180V 140mA 10W 150MHz | 2SC2912 SI-N 200V 140mA 10W 150MHz 2SC2922 SI-N 180V 17A 200W 50MHz | 2SC2923 SI-N 300V 0.1A 140MHz2SC2928 SI-N 1500V 5A 50W | 2SC2939 SI-N 500V 10A 100W 2.5us2SC2958 SI-N 160V 0.5A 1W | 2SC2979 SI-N 800V 3A 40W2SC2987 SI-N 140V 12A 120W 60MHz | 2SC2988 SI-N 36V 0.5A 175MHz2SC2999 SI-N 20V 30mA 750MHz | 2SC3001 SI-N 20V 3A PQ=7W(175MHz)2SC3019 SI-N 35V 0.4A 0.6W 520MHz | 2SC3020 SI-N 35V 1A 10W2SC3022 SI-N 35V 7A 50W | 2SC3026 SI-N 1700V 5A 50W POWER2SC3030 N-DARL 900V 7A 80W | 2SC3039 SI-N 500V 7A 52W2SC3042 SI-N 500/400V 12A 100W | 2SC3052F SI-N 50V 0.2A 0.15W 200MHz2SC3063 SI-N 300V 0.1A 1.2W 140MHz | 2SC3067 2xSI-N 130V 50mA 0.5W 1602SC3068 SI-N 30V 0.3A Ueb=15V B>8 | 2SC3071 SI-N 120V 0.2A Ueb=15V B>2SC3073 SI-N 30V 3A 15W 100MHz | 2SC3074 SI-N 60V 5A 20W 120MHz2SC3075 SI-N 500V 0.8A 10W 1/1.5us | 2SC3089 SI-N 800V 7A 80W2SC3101 SI-N 250V 30A 200W 25MHz | 2SC3102 SI-N 35V 18A 170W 520MHz2SC3112 SI-N 50V 0.15A 0.4W 100MHz | 2SC3116 SI-N 180V 0.7A 10W 120MHz2SC3117 SI-N 180V 1.5A 10W 120MHz | 2SC3133 SI-N 60V 6A 1.5W 27MHz2SC3148 SI-N 900V 3A 40W 1us | 2SC3150 SI-N 900V 3A 50W 15MHz2SC3153 SI-N 900V 6A 100W | 2SC3157 SI-N 150V 10A 60W2SC3158 SI-N 500V 7A 60W | 2SC3164 SI-N 500V 10A 100W2SC3169 SI-N 500V 2A 25W >8MHz | 2SC3175 SI-N 400V 7A 50W 40MHz2SC3178 SI-N 1200V 2A 60W | 2SC3179 SI-N 60V 4A 30W 15MHz2SC3180N SI-N 80V 6A 60W 30MHz | 2SC3181N SI-N 120V 8A 80W 30MHz2SC3182N SI-N 140V 10A 100W 30MHz | 2SC3195 SI-N 30V 20mA 0.1W 550MHz 2SC3199 SI-N 60V 0.15A 0.2W 130MHz | 2SC3200 SI-N 120V 0.1A 0.3W 100MHz2SC3202 SI-N 35V 0.5A 0.5W 300MHz | 2SC3203 SI-N 35V 0.8A 0.6W 120MHz2SC3205 SI-N 30V 2A 1W 120MHz | 2SC3206 SI-N 150V 0.5A 0.8W 120MHz2SC3210 SI-N 500V 10A 100W 1us | 2SC3211 SI-N 800V 5A 70W >3MHz2SC3212 SI-N 800V 7A 3W 3.5MHz | 2SC3225 SI-N 40V 2A 0.9W 1us2SC3231 SI-N 200V 4A 40W 8MHz | 2SC3240 SI-N 50V 25A 110W 30MHz2SC3242 SI-N 20V 2A 0.9W 80MHz | 2SC3244E SI-N 100V 0.5A 0.9W 130MHz2SC3245A SI-N 150V 0.1A 0.9W 200MHz | 2SC3246 SI-N 30V 1.5A 0.9W 130MHz2SC3247 SI-N 50V 1A .9W 130MHz B> | 2SC3257 SI-N 250V 10A 40W 1/3.5us2SC3258 SI-N 100V 5A 30W 120MHz | 2SC3260 N-DARL 800V 3A 50W B>10。

2SK3078A资料

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type2SK3078AVHF/UHF Band Amplifier Applications· Output power: P o ≥ 28.0dBmW · Gain: G p ≥ 8.0dB· Drain Efficiency: ηD ≥ 50%Maximum Ratings (Ta = 25°C)Characteristics Symbol Rating UnitDrain-source voltage V DSS10 VGate-source voltage V GSS 5 V Drain current I D 0.5 A Power dissipation P D (Note 1)3WChannel temperature T ch 150 °C Storage temperature rangeT stg−45~150 °CNote 1: Tc = 25°CMarkingElectrical Characteristics (Ta = 25°C)Characteristics Symbol Test Condition Min Typ. Max UnitOutput power P O 28.0 ¾ ¾ dBmW Drain efficiency ηD 50 ¾ ¾ % Power gain G p V DS = 4.5 V, Iidle = 50 mA(V GS = adjust)f = 470 MHz, P i = 20dBmWZ G = Z L == 50 Ω 8.0 ¾ ¾ dB Threshold voltage V th V DS = 4.8 V, I D = 0.5 mA 0.20 ¾ 1.20VDrain cut-off current I DSS V DS = 10 V, V GS = 0 V ¾ ¾ 10 µA Gate-source leakage currentI GSSV GS = 5 V, V DS = 0 V¾¾ 5 µALoad mismatch (Note 2)¾V DS = 6.5 V, f = 470 MHz, P i = 20dBmW,P o = 28.0dBmW (V GS = adjust) VSWR LOAD 10:1 all phaseNo degradation ¾Caution: This transistor is the electrostatic sensitive device. Please handle with caution. Note 2: When the RF output power test fixture is usedUnit: mmJEDEC―JEITA SC-62 TOSHIBA 2-5K1DU WPF Output Power Test FixtureGS DSL1: f 0.6, 5.5ID, 5T L2: f 0.6, 5.5ID, 7TLine: 2 mmP i – P o , G p , EffIidle – G p , EffP i – P oP i – IddVdd – G p , EffP i – P oP i (dBmW)Iidle (mA)P i (dBmW)P i (dBmW)Vdd (V)P i (dBmW)G p (d B m W )P o (d B m W )D r a i n c u r r e n t (m A )P o (d B m W )E f f (%) P o (d B m W )G p (d B )E f f (%)10050Idd (%)255 15 20 10 03020100 302010 082 46Eff3020Vdd Vdd Vdd VddCaution: These are typical curves and devices are not necessarily guaranteed at these curves.P i – IddP i (dBmW)I d d (m A )301020· TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property.In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. · The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. · The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. · The information contained herein is subject to change without notice.000707EAARESTRICTIONS ON PRODUCT USE。

2SK2608中文资料

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSIII)2SK2608Switching Regulator Applicationsz Low drain −source ON resistance : R DS (ON) = 3.73 Ω (typ.) z High forward transfer admittance : |Y fs |= 2.6 S (typ.)z Low leakage current : I DSS = 100 μA (max) (V DS = 720 V) z Enhancement mode : V th = 2.0~4.0 V (V DS = 10 V, I D = 1 mA)Absolute Maximum Ratings (Ta = 25°C)Characteristics Symbol Rating UnitDrain −source voltageV DSS 900 VDrain −gate voltage (R GS = 20 k Ω) V DGR 900 V Gate −source voltage V GSS ±30 V DC (Note 1) I D 3 A Drain currentPulse (Note 1)I DP 9A Drain power dissipation (Tc = 25°C)P D 100 WSingle pulse avalanche energy(Note 2) E AS 295mJ Avalanche currentI AR 3 ARepetitive avalanche energy (Note 3) E AR 10.0 mJ Channel temperature T ch 150 °C Storage temperature rangeT stg−55~150 °CNote: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change intemperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).Thermal CharacteristicsCharacteristics Symbol Max UnitThermal resistance, channel to case R th (ch −c) 1.25 °C / W Thermal resistance, channel to ambientR th (ch −a)83.3°C / WNote 1: Ensure that the channel temperature does not exceed 150°C. Note 2: V DD = 90 V, T ch = 25°C (initial), L = 60.0 mH, R G = 25 Ω, I AR = 3 A Note 3: Repetitive rating: pulse width limited by maximum channel temperature This transistor is an electrostatic-sensitive device. Please handle with caution.Unit: mmJEDEC TO-220AB JEITA SC-46 TOSHIBA 2-10P1B Weight: 2.0 g (typ.)Electrical Characteristics (Ta = 25°C)Characteristics SymbolTest ConditionMin Typ. Max Unit Gate leakage currentI GSS V GS = ±30 V, V DS = 0 V — — ±10μA Gate −source breakdown voltage V (BR) GSS I G = ±10 μA, V DS = 0 V ±30 — — V Drain cut −off currentI DSS V DS = 720 V, V GS = 0 V — — 100μA Drain −source breakdown voltage V (BR) DSS I D = 10 mA, V GS = 0 V 900 — — V Gate threshold voltage V th V DS = 10 V, I D = 1 mA 2.0 — 4.0 V Drain −source ON resistance R DS (ON)V GS = 10 V, I D = 1.5 A— 3.73 4.3 Ω Forward transfer admittance |Y fs | V DS = 20 V, I D = 1.5 A0.652.6—SInput capacitanceC iss — 750 —Reverse transfer capacitance C rss — 10 — Output capacitanceC ossV DS = 25 V, V GS = 0 V, f = 1 MHz — 70 —pF Rise timet r — 15 —Turn −on timet on — 55 —Fall timet f — 30 — Switching timeTurn −off timet off— 110 —nsTotal gate charge (gate −sourceplus gate −drain) Q g —25 — Gate −source charge Q gs — 13 — Gate −drain (“miller”) ChargeQ gdV DD ≈ 400 V, V GS = 10 V, I D = 3 A — 12 —nCSource −Drain Ratings and Characteristics (Ta = 25°C)Characteristics SymbolTest ConditionMin Typ. Max UnitContinuous drain reverse current(Note 1)I DR —— — 3 A Pulse drain reverse current(Note 1) I DRP —— — 9 A Forward voltage (diode) V DSF I DR = 3 A, V GS = 0 V——−1.9VReverse recovery time t rr — 1200 — ns Reverse recovery chargeQ rrI DR = 3 A, V GS = 0 V, dI DR / dt = 100 A / μs— 8.5 — μCMarkinglead (Pb)-free package or lead (Pb)-free finish.K2608⎟⎠⎞⎜⎝⎛−⋅⋅⋅=DD VDSS VDSS AS V B B I L 21E 2R G = 25 ΩV DD = 90 V , L = 60 mHRESTRICTIONS ON PRODUCT USE20070701-EN •The information contained herein is subject to change without notice.•TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property.In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.• The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk.•The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations.• The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties.• Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations.。

2SK3108中文资料

©1998,2000Document No. D13331EJ1V0DS00 (1st edition)Date Published January 2000 NS CP (K)Printed in JapanDATA SHEETThe mark 5 shows major revised points.The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version.Not all devices/types available in every country. Please check with local NEC representative for availability and additional information.DESCRIPTIONThe 2SK3108 is N channel MOS FET device that features a low on-state resistance and excellent switching characteristics,and designed for high voltage applications such as DC/DC converter.FEATURES•Gate voltage rating ±30 V •Low on-state resistanceR DS(on) = 0.4 Ω MAX. (V GS = 10 V, I D = 4.0 A)•Low input capacitanceC iss = 400 pF TYP. (V DS = 10 V, V GS = 0 V)•Avalanche capability rated •Built-in gate protection diode •Isolated TO-220 packageABSOLUTE MAXIMUM RATING (T A = 25°C )Drain to Source Voltage (V GS = 0 V)V DSS 200V Gate to Source Voltage (V DS = 0 V)V GSS ±30V Drain Current(DC) (T C = 25°C)I D(DC)±8.0A Drain Current(pulse)Note1I D(pulse)±24A Total Power Dissipation (T A = 25°C)P T1 2.0W Total Power Dissipation (T C = 25°C)P T225W Channel Temperature T ch 150°C Storage Temperature T stg−55 to +150°C Single Avalanche Current Note2I AS 8.0A Single Avalanche EnergyNote2E AS51mJNote1. PW ≤ 10 µs, Duty Cycle ≤ 1%2. Starting T ch = 25°C, V DD = 100 V, R G = 25 Ω , V GS = 20 V →0 VORDERING INFORMATIONPART NUMBERPACKAGE 2SK3108Isolated TO-220Data Sheet D13331EJ1V0DS002ELECTRICAL CHARACTERISTICS (T A = 25°C)CharacteristicsSymbol Test Conditions MIN.TYP.MAX.UnitDrain Leakage Current I DSS V DS = 200 V, V GS = 0 V 100µA Gate Leakage Current I GSSV GS = ±30 V, V DS = 0 V ±10µA Gate to Source Cut-off Voltage V GS(off)V DS = 10 V, I D = 1 mA 2.5 4.5V Forward Transfer Admittance| y fs|V DS = 10 V, ID = 4.0 A 1.5SDrain to Source On-state Resistance R DS(on)V GS = 10 V, I D = 4.0 A 0.320.4ΩInput Capacitance C iss V DS = 10 V 400pF Output CapacitanceC oss V GS = 0 V 110pF Reverse Transfer Capacitance C rss f = 1 MHz55pF Turn-on Delay Time t d(on)V DD = 100 V, I D = 4.0 A 12ns Rise Timet r V GS(on) = 10 V 25ns Turn-off Delay Time t d(off)R G = 10 Ω40ns Fall Timet f 20ns Total Gate Charge Q G V DD = 160 V 18nC Gate to Source Charge Q GS V GS = 10 V 3.5nC Gate to Drain Charge Q GD I D = 8.0 A10nC Diode Forward Voltage V F(S-D)I F = 8.0 A, V GS = 0 V 1.0V Reverse Recovery Time t rr I F = 8.0 A, V GS = 0 V 250nsReverse Recovery ChargeQ rrdi/dt = 50 A/µs1.0µCTEST CIRCUIT 3 GATE CHARGEV GS = 20 → 0 PG.TEST CIRCUIT 1 AVALANCHE CAPABILITYL DDTEST CIRCUIT 2 SWITCHING TIMEL DDτ = 1 µsDuty Cycle ≤ 1 %5Data Sheet D13331EJ1V0DS003TYPICAL CHARACTERISTICS (T A = 25°C)DRAIN CURRENT vs.DRAIN TO SOURCE VOLTAGEV DS - Drain to Source Voltage - VI D - D r a i n C u r r e n t - A30252015105FORWARD TRANSFER CHARACTERISTICS V GS - Gate to Source Voltage - VI D - D r a i n C u r r e n t - A1001010.10.010.001012345678910111213141516GATE TO SOURCE CUT-OFF VOLTAGE vs.CHANNEL TEMPERATURE T ch - Channel Temperature - ˚CV G S (o f f ) - G a t e t o S o u r c e C u t -o f f V o l t a g e - VV DS = 10 V I D = 1 mA− 505010001505.04.54.03.53.02.52.0− 252575125FORWARD TRANSFER ADMITTANCE vs.DRAIN CURRENT I D - Drain Current - A|y f s |- F o r w a r d T r a n s f e r A d m i t t a n c e - s0.11010.10.0111000.01105Data Sheet D13331EJ1V0DS004REVERSE RECOVERY TIME vs.DRAIN CURRENTI D - Drain Current - At r r - R e v e r s e R e c o v e r y T i m e - n s10.1101101001000100di/dt = 50A /V GS = 0 Vs µData Sheet D13331EJ1V0DS005DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREAT C - Case Temperature - ˚C d T - P e r c e n t a g e o f R a t e d P o w e r - %20406080100120140160204060801000TOTAL POWER DISSIPATION vs.CASE TEMPERATURET C - Case Temperature - ˚CP T - T o t a l P o w e r D i s s i p a t i o n - W02040608010012014016040302010Data Sheet D13331EJ1V0DS006Data Sheet D13331EJ1V0DS007PACKAGE DRAWING(Unit : mm)Isolated TO-220 (MP-45F)Body DiodeDiodeDrainEQUIVALENT CIRCUITThe diode connected between the gate and source of the transistor serves as a protector against ESD.When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device.• The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version.• No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document.• NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual propertyrights of third parties by or arising from use of a device described herein or any other liability arising from useof such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or otherintellectual property rights of NEC Corporation or others.• Descriptions of circuits, software, and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits,software, and information in the design of the customer's equipment shall be done under the full responsibilityof the customer. NEC Corporation assumes no responsibility for any losses incurred by the customer or third parties arising from the use of these circuits, software, and information.• While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices,the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons orproperty arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features.• NEC devices are classified into the following three quality grades:"Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on acustomer designated "quality assurance program" for a specific application. The recommended applications ofa device depend on its quality grade, as indicated below. Customers must check the quality grade of each devicebefore using it in a particular application.Standard: Computers, office equipment, communications equipment, test and measurement equipment,audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robotsSpecial: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disastersystems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support)Specific: Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, lifesupport systems or medical equipment for life support, etc.The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact an NEC sales representative in advance.M7 98. 8。

2SK2802资料

2SK2802Silicon N Channel MOS FETLow Frequency Power SwitchingADE-208-537C (Z)4th. EditionJun 1998 Features• Low on-resistanceRDS(on) = 0. 2Ω typ. (VGS= 4 V, ID= 100 mA)• 2.5V gate drive devices.• Small package (MPAK)Outline2SK28022Absolute Maximum Ratings (Ta = 25°C)ItemSymbol Ratings Unit Drain to source voltage V DSS 30V Gate to source voltage V GSS ±10V Drain current I D0.5A Drain peak current I D(pulse)Note1 1.0A Channel dissipation Pch Note2150mW Channel temperature Tch 150°C Storage temperature Tstg–55 to +150°CNote:1.PW ≤ 10µs, duty cycle ≤ 1 %Electrical Characteristics (Ta = 25°C)ItemSymbol Min Typ Max Unit Test Conditions Drain to source breakdown voltageV (BR)DSS 30——V I D = 100µA, V GS = 0Gate to source breakdown voltageV (BR)GSS ±10——V I G = ±100µA, V DS = 0Zero gate voltege drain currentI DSS —— 1.0µA V DS = 30 V, V GS = 0Gate to source leak currentI GSS——±10µA V GS = ±6.5V, V DS = 0Gate to source cutoff voltage V GS(off)0.5— 1.5V I D = 10µA, V DS = 5V Static drain to source on state resistanceR DS(on)—0.20.28ΩI D = 100 mA V GS = 4V Note2Static drain to source on state resistanceR DS(on)—0.30.5ΩI D = 40 mA V GS = 2.5V Note2Forward transfer admittance |y fs |0.7 1.2—S I D = 250 mA V DS = 10V Note2Input capacitance Ciss —14.0—pF V DS = 10V Output capacitance Coss —68—pF V GS = 0Reverse transfer capacitance Crss— 3.0—pF f = 1MHzTurn-on delay time t d(on)—0.27—µs V GS = 4V, I D = 250 mA Rise timet r — 1.5—µs R L = 40ΩTurn-off delay time t d(off)— 2.2—µs Fall time t f—2.15—µsNote:2.Pulse test3. Marking is “ZV–”2SK2802 Main Characteristics32SK280242SK280252SK280262SK2802 Package DimensionsUnit: mm7Cautions1.Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,copyright, trademark, or other intellectual property rights for information contained in this document.Hitachi bears no responsibility for problems that may arise with third party’s rights, includingintellectual property rights, in connection with use of the information contained in this document.2.Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use.3.Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,contact Hitachi’s sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,traffic, safety equipment or medical equipment for life support.4.Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installationconditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product.5.This product is not designed to be radiation resistant.6.No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi.7.Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor products.Hitachi, Ltd.Semiconductor & Integrated Circuits.Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan.Hitachi Asia Pte. Ltd.16 Collyer Quay #20-00Hitachi TowerSingapore 049318Tel: 535-2100Fax: 535-1533URLNorthAmerica : http:/Europe : /hel/ecg Asia (Singapore): .sg/grp3/sicd/index.htm Asia (Taiwan): /E/Product/SICD_Frame.htm Asia (HongKong): /eng/bo/grp3/index.htm Japan : http://www.hitachi.co.jp/Sicd/indx.htmHitachi Asia Ltd.Taipei Branch Office3F, Hung Kuo Building. No.167, Tun-Hwa North Road, Taipei (105)Tel: <886> (2) 2718-3666Fax: <886> (2) 2718-8180Hitachi Asia (Hong Kong) Ltd.Group III (Electronic Components)7/F., North Tower, World Finance Centre,Harbour City, Canton Road, Tsim Sha Tsui,Kowloon, Hong Kong Tel: <852> (2) 735 9218Fax: <852> (2) 730 0281 Telex: 40815 HITEC HXHitachi Europe Ltd.Electronic Components Group.Whitebrook ParkLower Cookham Road MaidenheadBerkshire SL6 8YA, United Kingdom Tel: <44> (1628) 585000Fax: <44> (1628) 778322Hitachi Europe GmbHElectronic components Group Dornacher Stra§e 3D-85622 Feldkirchen, Munich GermanyTel: <49> (89) 9 9180-0Fax: <49> (89) 9 29 30 00Hitachi Semiconductor (America) Inc.179 East Tasman Drive,San Jose,CA 95134 Tel: <1> (408) 433-1990Fax: <1>(408) 433-0223For further information write to:。

2SK2978中文资料

2.5
Channel dissipation
Pch Note2
1
Channel temperature
Tch
150
Storage temperature
Tstg
–55 to +150
Note: 1. PW ≤ 10µs, duty cycle ≤ 1 % 2. When using the alumina ceramic board (12.5 x 20 x 0.7 mm)
Gate to Source Voltage V GS (V) Switching Time t (ns)
1000 500
Switching Characteristics
VGS = 4 V, V DD = 10 V PW = 5 µs, duty < 1 %
200
100 tf
50
tr t d(off)
t rr
—
Note: 3. Pulse test 4. Marking is “ZY”
Typ — — — — — 0.09
Max — — 10 ±10 1.5 0.12
Unit V V µA µA V Ω
Test Conditions ID = 10mA, VGS = 0 IG = ±100µA, VDS = 0 VDS = 20 V, VGS = 0 VGS = ±8V, VDS = 0 ID = 1mA, VDS = 10V ID = 1.5A, VGS = 4V Note3
Drain Current I D (A)
Typical Output Characteristics
10 V 5 V
5
3V
Pulse Test

2SK3210中文资料

I DSS
—
Gate to source cutoff voltage
VGS(off)
1.0
Static drain to source on state
RDS(on)
—
resistance
RDS(on)
—
Forward transfer admittance
|yfs|
18
Input capacitance
元器件交易网
2SK3210(L), 2SK3210(S)
Silicon N Channel MOS FET High Speed Power Switching
Features
• Low on-resistance RDS =35mΩ typ.
• High speed switching • 4V gate drive device can be driven from 5V source
Test Conditions ID = 10mA, VGS = 0 IG = ±100µA, VDS = 0 VGS = ±16V, VDS = 0 VDS = 150 V, VGS = 0 ID = 1mA, VDS = 10V ID = 15A, VGS = 10VNote4 ID = 15A, VGS = 4V Note4 ID = 15A, VDS = 10V Note4 VDS = 10V VGS = 0 f = 1MHz ID = 15A, VGS = 10V RL = 2Ω
Asia (HongKong) : /eng/bo/grp3/index.htm
Japan
: http://www.hitachi.co.jp/Sicd/indx.htm

2SK系列场效应管参数（18）

2SK系列场效应管参数（18）发布时间：2009-02-14 15:20:31 来源：资料室作者：WHGUY LOIU 更新20181224 210303 2SK N-CHANNELPOWER MOSFET N沟道功率场效应管型号参数查询及代换型号Drain-to-SourceVoltage漏极到源极电压StaticDrain-SourceOn-StateResistance静态漏源通态电阻ContinuousDrainCurrent连续漏电流(TC=25℃)PD TotalPowerDissipation总功率耗散(TC=25℃）Package封装ToshibaReplacement替换东芝型号Note注意Vender供应商VDSS RDS(ON)ID PD(V)(ohm)欧姆(A)(W)2SK2700900 4.33TO-220IS2SK2700A Toshiba 2SK2717900 2.55TO-220IS2SK2717A Toshiba 2SK2718900 6.4 2.5TO-220IS2SK2718A Toshiba 2SK2719900 4.33TO-3P(N)2SK2719A Toshiba 2SK273390091TO-220AB2SK2733A Toshiba 2SK2741600.165SP2SK2741A Toshiba 2SK27421000.353SP2SK2742A Toshiba 2SK2744500.0245TO-3P(N)2SK2744A Toshiba 2SK2745500.009550TO-3P(N)2SK2745A Toshiba 2SK2746800 1.77TO-3P(N)2SK2746A Toshiba 2SK274990027TO-3P(N)2SK2749A Toshiba 2SK2750600 2.2 3.5TO-220IS2SK2750A Toshiba 2SK27765000.858TO-220FL/SM2SK2776A Toshiba 2SK2777600 1.256TO-220FL/SM2SK2777A Toshiba 2SK2782600.05520DP2SK2782A Toshiba 2SK27891000.08527TO-220FL/SM2SK2789A Toshiba 2SK28352000.85TPS2SK2835A Toshiba 2SK283660091SP2SK2836A Toshiba 2SK28375000.2720TO-3P(N)2SK2837A Toshiba 2SK2838400 1.2 5.5TO-220FL/SM2SK2838A Toshiba 2SK2839300.0410SP2SK2839A Toshiba 2SK28402501 4.5TO-220IS2SK2840A Toshiba 2SK28414000.5510TO-220AB2SK2841A Toshiba 2SK28425000.5212TO-220IS2SK2842A Toshiba 2SK28436000.7510TO-220IS2SK2843A Toshiba 2SK2844300.0235TO-220AB2SK2844A Toshiba 2SK284590091DP2SK2845A Toshiba 2SK284660052TPS2SK2846A Toshiba 2SK2847900 1.48TO-3P(N)IS2SK2847A Toshiba 2SK28591000.42SOP-8(Single)Sanyo 2SK286250032TO-220IS2SK2862A Toshiba2SK286560052POWER2SK2865A Toshiba2SK2883800 3.63TO-220FL/SM2SK2883A Toshiba 2SK2884800 2.25TO-220FL/SM2SK2884A Toshiba 2SK2886500.0245TO-220IS2SK2886A Toshiba 2SK28896000.7510TO-220FL/SM2SK2889A Toshiba 2SK29142500.58.5TO-220AB2SK2914A Toshiba 2SK29156000.416TO-3P(N)2SK2915A Toshiba 2SK29165000.414TO-3P(N)IS2SK2916A Toshiba 2SK29175000.2718TO-3P(N)IS2SK2917A Toshiba2SK29202000.85POWERMOLD2SK2920A Toshiba2SK29494000.5510TO-220FL/SM2SK2949A Toshiba 2SK29524000.558.5TO-220IS2SK2952A Toshiba 2SK29536000.415TO-3P(N)IS2SK2953A Toshiba 2SK2961600.272TO-92MOD2SK2961A Toshiba 2SK29621000.71TO-92MOD2SK2962A Toshiba 2SK29631000.71POWER-MINI2SK2963A Toshiba 2SK2964300.172POWER-MINI2SK2964A Toshiba 2SK29652000.2611TO-220IS2SK2965A Toshiba 2SK29662500.3210TO-220IS2SK2966A Toshiba 2SK29672500.0730TO-3P(N)2SK2967A Toshiba 2SK2968900 1.2510TO-3P(N)2SK2968A Toshiba 2SK2985600.005845TO-220IS2SK2985A Toshiba 2SK2986600.005845TO-220FL/SM2SK2986A Toshiba 2SK2987600.005870TO-3P(N)2SK2987A Toshiba 2SK2989500.155TO-92MOD2SK2989A Toshiba 2SK2991500 1.55TO-220FL/SM2SK2991A Toshiba 2SK2992200 3.51POWER-MINI2SK2992A Toshiba 2SK29932500.1120TO-220FL/SM2SK2993A Toshiba 2SK29952500.0730TO-3P(N)IS2SK2995A Toshiba 2SK2996600110TO-220IS2SK2996A Toshiba 2SK29978008 1.5DP2SK2997A Toshiba 2SK2998500180.5TO-92MOD2SK2998A Toshiba 2SK3017900 1.258TO-3P(N)IS2SK3017A Toshiba 2SK3051600.0345TO-220FL/SM2SK2266A Toshiba 2SK306760052TO-220IS2SK3067A Toshiba 2SK30685000.5212TO-220FL/SM2SK3068A Toshiba 2SK3085600 2.2 3.5TO-220AB2SK3085A Toshiba 2SK3088900 4.33TO-220FL/SM2SK3088A Toshiba 2SK3089300.0340TO-220FL/SM2SK3089A Toshiba 2SK3090300.0245TO-220FL/SM2SK3090A Toshiba 2SK31175000.2720TO-3P(SM)2SK3117A Toshiba 2SK3125300.00760TO-3P(SM)2SK3125A Toshiba 2SK31264500.6510TO-220IS2SK3126A Toshiba 2SK3127300.01145TO-220FL/SM2SK3127A Toshiba 2SK3128300.01160TO-3P(N)2SK3128A Toshiba 2SK31762000.05230TO-3P(N)2SK3176A Toshiba105来顶⼀下返回⾸页18/18⾸页2SK N-CHANNELPOWER MOSFET N沟道功率场效应管型号参数查询及代换型号Drain-to-Source Voltage漏极到源极电压 Static Drain-SourceOn-State Resistance静态漏源通态电阻Continuous Drain Current连续漏电流(TC=25℃)PD Total Power Dissipation 总功率耗散(TC=25℃）Package封装Toshiba Replacement 替换东芝型号 Note 注意Vender 供应商VDSS RDS(ON) ID PD (V) (ohm)欧姆(A) (W)2SK11191000 3.8 4TO-220AB 2SK1119 AToshiba2SK11201000 1.8 8TO-3P(N) 2SK1120 AToshiba2SK13591000 3.8 5TO-3P(N) 2SK1359 AToshiba2SK13651000 1.8 7TO-3P(N)IS 2SK1365 AToshiba2SK14891000 1 12TO-3P(L) 2SK1489 AToshiba2SK19301000 3.8 42SK217360 0.017 50TO-3P(N) 2SK2173 AToshiba 2SK2200100 0.35 3TPS 2SK2200 AToshiba 2SK2201100 0.35 3POWER MOLD 2SK2201 AToshiba 2SK222960 0.16 5TPS 2SK2229 AToshiba 2SK223160 0.16 5POWER MOLD 2SK2231 AToshiba 2SK223260 0.046 25TO-220IS 2SK2232 AToshiba 2SK223360 0.03 45TO-3P(N) 2SK2233 AToshibaTO-220FL/SM 2SK2266 AToshiba 2SK226760 0.011 60TO-3P(L) 2SK2267 AToshiba 2SK2274700 1.7 5TO-220IS 2SK2274 AToshiba 2SK231160 0.046 25TO-220FL/SM 2SK2311 AToshiba 2SK231260 0.017 45TO-220IS 2SK2312 AToshiba 2SK231360 0.011 60TO-3P(N) 2SK2313 AToshiba 2SK2314100 0.085 27TO-220AB 2SK2314 AToshiba 2SK2350200 0.4 8.5 TO-220IS 2SK2350 A Toshiba200 0.18 15 TO-220IS 2SK2382 A Toshiba2SK238560 0.03 36 TO-220IS 2SK2385 A Toshiba2SK2389700 1.7 5 TO-220AB 2SK2389 A Toshiba2SK2391100 0.085 20 TO-220IS 2SK2391 A Toshiba2SK239860 0.03 45 TO-3P(N) 2SK2233 A Toshiba2SK2399100 0.23 5 POWER MOLD 2SK2399 A Toshiba 2SK2400100 0.23 5 TPS 2SK2400 A Toshiba2SK2401200 0.18 15 TO-220FL/SM 2SK2401 A Toshiba 2SK2417250 0.5 7.5 TO-220IS 2SK2417 A Toshiba2SK244020 0.038 6 SOP-8(Single) TPC8008 A Sanyo 2SK244120 0.032 7 SOP-8(Single) TPC8008 A Sanyo 2SK244230 0.029 7 SOP-8(Single) TPC8006-H A Sanyo 2SK244560 0.018 50 TO-3P(N) 2SK2445 A Toshiba2SK2466100 0.046 30 TO-220IS 2SK2466 A Toshiba2SK249316 0.1 5 POWER MOLD 2SK2493 A Toshiba 2SK250750 0.046 25 TO-220IS 2SK2507 A Toshiba500 0.85 8 TO-220IS 2SK2543 A Toshiba2SK2544600 1.25 6 TO-220AB 2SK2544 A Toshiba2SK2545600 1.25 6 TO-220IS 2SK2545 A Toshiba2SK254916 0.29 2 POWER-MINI 2SK2549 A Toshiba 2SK255050 0.03 45 TO-3P(N) 2SK2550 A Toshiba2SK255150 0.011 50 TO-3P(N) 2SK2551 A Toshiba2SK255630 0.04 6 SOP-8(Single) TPC8006-H A Sanyo 2SK255730 0.037 7 SOP-8(Single) TPC8006-H A Sanyo 2SK2598250 0.25 13 TO-220FL/SM 2SK2598 A Toshiba 2SK2599500 3 2 TPS 2SK2599 A Toshiba2SK2600500 0.85 8 TO-3P(N)IS 2SK2600 A Toshiba2SK2601500 1 10 TO-3P(N) 2SK2601 A Toshiba2SK2602600 1.25 6 TO-3P(N) 2SK2602 A Toshiba2SK2603800 3.6 3 TO-220AB 2SK2603 A Toshiba2SK2604800 2.2 5 TO-3P(N) 2SK2604 A Toshiba2SK2605800 2.2 5 TO-220IS 2SK2605 A Toshiba900 4.3 3 TO-220AB 2SK2608 A Toshiba2SK2610900 2.5 5 TO-3P(N) 2SK2610 A Toshiba2SK2611900 1.4 9 TO-3P(N) 2SK2611 A Toshiba2SK26131000 1.7 8 TO-3P(N) 2SK2613 A Toshiba2SK261450 0.046 20 DP 2SK2614 A Toshiba2SK261560 0.37 2 POWER-MINI 2SK2615 A Toshiba2SK263720 0.025 8 SOP-8(Single) TPC8008 A Sanyo2SK2661500 1.5 5 TO-220AB 2SK2661 A Toshiba2SK2662500 1.5 5 TO-220IS 2SK2662 A Toshiba2SK2679400 1.2 5.5 TO-220IS 2SK2679 A Toshiba2SK2698500 0.4 15 TO-3P(N) 2SK2698 A Toshiba2SK2699600 0.65 12 TO-3P(N) 2SK2699 A Toshiba' href='/diode/863_17.htm'>上⼀页2SK POWER MOSFET功率场效应管型号参数替换型号⼚家⽤途构造沟道漏源极电压(V)漏极电流(A)最⼤功耗(W)封装形式 2SK2251-01 富⼠电机 SW-Reg, UPS, DDC, A MOS N 250 2 20 4-234 2SK2252-01L, S 富⼠电机 SW-Reg, UPS, DDC, A MOS N 250 8 50 4-389 2SK2253-01M 富⼠电机 SW-Reg, UPS, DDC, A MOS N 250 8 20 4-390 2SK2254-01L, S 富⼠电机 SW-Reg, UPS, DDC, A MOS N 250 18 80 4-3892SK2255-01M 富⼠电机 SW-Reg, UPS, DDC, A MOS N 250 18 50 4-390 2SK2256-01 富⼠电机 SW-Reg, UPS, DDC, A MOS N 250 18 80 4-234 2SK2257-01 富⼠电机 SW-Reg, UPS, DDC, A MOS N 500 17 150 4-186 2SK2258-01 富⼠电机 SW-Reg, UPS, DDC, A MOS N 1000 4 100 4-186 2SK2259-01M 富⼠电机 - MOS N 60 40 40 4-390 2SK2264 ⽇⽴ LF/RF A, HS SW MOS N 350 5 100 4-149 2SK2265 ⽇⽴ LF/RF A, HS SW MOS N 400 5 100 4-149 2SK2266东芝 HS SW, DDC MOS N 60 45 65 4-341 2SK2267 东芝 HS SW, DDC MOS N 60 60 150 4-元 HS SW MOS N 60 10 15 4-290 2SK2282 新电元 HS SW MOS N 60 10 30 4-383 2SK2283新电元 HS SW MOS N 60 10 20 4-304 2SK2284 新电元 HS SW MOS N 60 15 40 4-3832SK2285 新电元 HS SW MOS N 60 15 25 4-304 2SK2286 新电元 HS SW MOS N 60 20 50 4-383 2SK2287 新电元 HS SW MOS N 60 20 30 4-304 2SK2288 新电元 HS SW MOS N 60 30 60 4-383 2SK2289 新电元 HS SW MOS N 60 30 40 4-304 2SK2290 新电元 HS SW MOS N 60 45 60 4-383 2SK2291 新电元 HS SW MOS N 60 45 50 4-304 2SK2311 东芝 HS SW, SW-Reg, DDC MOS N 60 25 40 4-341 2SK2312 东芝 HS SW, DDC MOS N 60 45 45 4-335 2SK2313 东芝 HS SW, DDC MOS N 60 60 150 4-184 2SK2315 ⽇⽴ HS PSW MOS N 60 ±2 1 4-2952SK2316 三洋 - MOS N 20 2 3.5 4-252 2SK2317 三洋 - MOS N 20 4 20 - 2SK2318 三洋 - MOS N 20 12 30 - 2SK2319 东芝 HS SW, SW-Reg, DDC MOS N 800 7 90 4-388 2SK2320 东芝 HS SW, SW-Reg, DDC MOS N 800 8.5 90 4-388 2SK2322(L)(S) ⽇⽴ HS PSW MOS N 60 15 50 4-294 2SK2328 ⽇⽴ HS PSW MOS N 650 7 75 4-116B 2SK2329(L)(S) ⽇⽴ HS PSW MOS N 30 10 20 4-377, 378 2SK2330(L)(S) ⽇⽴ HS PSW MOS N 500 15 100 4-379, 380 2SK2333 新电元 HS SW MOS N 700 6 50 4-304 2SK2334(L)(S) ⽇⽴ HS PSW MOS N 60 20 30 4-377, 378 2SK2341 NEC - MOS N 250 ±11 35 4-304 2SK2344 三洋 HS SW MOS N 20 7 2 4-3862SK2345 ⽇⽴ HS PSW MOS N 350 6 35 4-292 2SK2346 ⽇⽴ HS PSW MOS N 60 20 25 4-292 2SK2353 NEC - MOS N 450 ±4.5 30 4-304 2SK2354 NEC - MOS N 500 ±4.5 30 4-3042SK2355 NEC - MOS N 450 ±5 50 4-287 2SK2356 NEC - MOS N 500 ±5 50 4-287 2SK2357 NEC - MOS N 450 ±6 35 4-304 2SK2358 NEC - MOS N 500 ±6 35 4-304 2SK2359 NEC -MOS N 450 ±7 75 4-287 2SK2360 NEC - MOS N 500 ±7 75 4-287 2SK2361 NEC - MOS N 450 ±10 100 4-253 2SK2362 NEC - MOS N 500 ±10 100 4-253 2SK2363 NEC - MOS N 450±10 35 4-304 2SK2364 NEC - MOS N 500 ±10 35 4-304 2SK2365 NEC - MOS N 450 ±12 75 4-287 2SK2366 NEC - MOS N 500 ±12 75 4-287 2SK2367 NEC - MOS N 450 ±15 120 4-253 2SK2368 NEC - MOS N 500 ±15 120 4-253 2SK2369 NEC - MOS N 450 ±20 120 4-2532SK2370 NEC - MOS N 500 ±20 120 4-253 2SK2371 NEC - MOS N 450 ±25 160 4-2532SK2372 NEC - MOS N 500 ±25 160 4-253 2SK2373 ⽇⽴ HS PSW MOS N 30 0.2 0.15 4-185B 2SK2376 东芝 HS SW, DDC MOS N 60 45 100 4-341 2SK2390 ⽇⽴ HS PSW MOS N 60 12 20 4-376 2SK2393 ⽇⽴ HS PSW MOS N 1500 8 200 4-296 2SK2394 三洋 RF LN A J N 15 10m 200m 4-126A 2SK2395 三洋 RF LN A J N 15 10m 300m 4-157A 2SK2408 ⽇⽴ HS PSW MOS N 500 7 60 4-116B 2SK2418(L)(S) ⽇⽴ HS PSW MOS N 20 7 20 4-377, 3782SK2423 ⽇⽴ HS PSW MOS N 450 7 35 4-376 2SK2424 ⽇⽴ HS PSW MOS N 450 8 35 4-376 2SK2425 ⽇⽴ HS PSW MOS N 250 7 30 4-376 2SK2426 ⽇⽴ HS PSW MOS N 250 12 35 4-376 2SK2431 ⽇⽴ HS PSW MOS N 450 3 25 4-376 2SK2441 三洋 HS SW MOS N 20 7 2 4-385 2SK254 NEC CATV Tuner MOS N 18 25m 130m 4-352' href='/diode/863_16.htm'>162SK N-CHANNELPOWER MOSFET N沟道功率场效应管型号参数查询及代换型号Drain-to-Source Voltage漏极到源极电压 Static Drain-SourceOn-State Resistance静态漏源通态电阻Continuous Drain Current连续漏电流(TC=25℃)PD Total Power Dissipation 总功率耗散(TC=25℃）Package封装Toshiba Replacement 替换东芝型号 Note 注意Vender 供应商VDSS RDS(ON) ID PD (V) (ohm)欧姆(A) (W)2SK11191000 3.8 4TO-220AB 2SK1119 AToshiba2SK11201000 1.8 8TO-3P(N) 2SK1120 A1000 3.8 5TO-3P(N) 2SK1359 AToshiba 2SK13651000 1.8 7TO-3P(N)IS 2SK1365 AToshiba 2SK14891000 1 12TO-3P(L) 2SK1489 AToshiba 2SK19301000 3.8 4TO-220FL/SM 2SK1930 AToshiba 2SK217360 0.017 50TO-3P(N) 2SK2173 AToshiba 2SK2200100 0.35 3TPS 2SK2200 AToshiba 2SK2201100 0.35 3POWER MOLD 2SK2201 AToshiba 2SK2229TPS 2SK2229 AToshiba 2SK223160 0.16 5POWER MOLD 2SK2231 AToshiba 2SK223260 0.046 25TO-220IS 2SK2232 AToshiba 2SK223360 0.03 45TO-3P(N) 2SK2233 AToshiba 2SK226660 0.03 45TO-220FL/SM 2SK2266 AToshiba 2SK226760 0.011 60TO-3P(L) 2SK2267 AToshiba 2SK2274700 1.7 5TO-220IS 2SK2274 AToshiba 2SK231160 0.046 25TO-220FL/SM 2SK2311 AToshiba60 0.017 45TO-220IS 2SK2312 AToshiba 2SK231360 0.011 60TO-3P(N) 2SK2313 AToshiba 2SK2314100 0.085 27TO-220AB 2SK2314 AToshiba 2SK2350200 0.4 8.5 TO-220IS 2SK2350 A Toshiba2SK237660 0.017 45 TO-220FL/SM 2SK2376 A Toshiba2SK2381200 0.8 5 TO-220IS 2SK2381 A Toshiba2SK2382200 0.18 15 TO-220IS 2SK2382 A Toshiba2SK238560 0.03 36 TO-220IS 2SK2385 A Toshiba2SK2389700 1.7 5 TO-220AB 2SK2389 A Toshiba2SK2391100 0.085 20 TO-220IS 2SK2391 A Toshiba2SK239860 0.03 45 TO-3P(N) 2SK2233 A Toshiba2SK2399100 0.23 5 POWER MOLD 2SK2399 A Toshiba2SK2400100 0.23 5 TPS 2SK2400 A Toshiba2SK2401200 0.18 15 TO-220FL/SM 2SK2401 A Toshiba250 0.5 7.5 TO-220IS 2SK2417 A Toshiba2SK244020 0.038 6 SOP-8(Single) TPC8008 A Sanyo 2SK244120 0.032 7 SOP-8(Single) TPC8008 A Sanyo 2SK244230 0.029 7 SOP-8(Single) TPC8006-H A Sanyo 2SK244560 0.018 50 TO-3P(N) 2SK2445 A Toshiba2SK2466100 0.046 30 TO-220IS 2SK2466 A Toshiba2SK249316 0.1 5 POWER MOLD 2SK2493 A Toshiba 2SK250750 0.046 25 TO-220IS 2SK2507 A Toshiba2SK2508250 0.25 13 TO-220IS 2SK2508 A Toshiba2SK2542500 0.85 8 TO-220AB 2SK2542 A Toshiba2SK2543500 0.85 8 TO-220IS 2SK2543 A Toshiba2SK2544600 1.25 6 TO-220AB 2SK2544 A Toshiba2SK2545600 1.25 6 TO-220IS 2SK2545 A Toshiba2SK254916 0.29 2 POWER-MINI 2SK2549 A Toshiba 2SK255050 0.03 45 TO-3P(N) 2SK2550 A Toshiba2SK255150 0.011 50 TO-3P(N) 2SK2551 A Toshiba2SK255630 0.04 6 SOP-8(Single) TPC8006-H A Sanyo 2SK255730 0.037 7 SOP-8(Single) TPC8006-H A Sanyo250 0.25 13 TO-220FL/SM 2SK2598 A Toshiba 2SK2599500 3 2 TPS 2SK2599 A Toshiba2SK2600500 0.85 8 TO-3P(N)IS 2SK2600 A Toshiba2SK2601500 1 10 TO-3P(N) 2SK2601 A Toshiba2SK2602600 1.25 6 TO-3P(N) 2SK2602 A Toshiba2SK2603800 3.6 3 TO-220AB 2SK2603 A Toshiba2SK2604800 2.2 5 TO-3P(N) 2SK2604 A Toshiba2SK2605800 2.2 5 TO-220IS 2SK2605 A Toshiba2SK2606800 1.2 8.5 TO-3P(N)IS 2SK2606 A Toshiba2SK2607800 1.2 9 TO-3P(N) 2SK2607 A Toshiba2SK2608900 4.3 3 TO-220AB 2SK2608 A Toshiba2SK2610900 2.5 5 TO-3P(N) 2SK2610 A Toshiba2SK2611900 1.4 9 TO-3P(N) 2SK2611 A Toshiba2SK26131000 1.7 8 TO-3P(N) 2SK2613 A Toshiba2SK261450 0.046 20 DP 2SK2614 A Toshiba2SK261560 0.37 2 POWER-MINI 2SK2615 A Toshiba 2SK263720 0.025 8 SOP-8(Single) TPC8008 A Sanyo 2SK2661500 1.5 5 TO-220AB 2SK2661 A Toshiba500 1.5 5 TO-220IS 2SK2662 A Toshiba 2SK2679400 1.2 5.5 TO-220IS 2SK2679 A Toshiba 2SK2698500 0.4 15 TO-3P(N) 2SK2698 A Toshiba 2SK2699600 0.65 12 TO-3P(N) 2SK2699 A Toshiba。

2SK3078A中文资料

2SK2112中文资料

Document No. D11232EJ2V0DS00 (2nd edition)Date Published June 1996 PPrinted in Japan199622SK21123TYPICAL CHARACTERISTICS (T A = 25 ˚C)DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREAd T - De r a t i n g F a c t o r - %FORWARD BIAS SAFE OPERATING AREAV DS - Drain to Source Voltage - VI D - D r a i n C u r r e n t - AV GS - Gate to Source Voltage - VFORWARD TRANSFER ADMITTANCE vs.DRAIN CURRENT I D - Drain Current - A |y f s | - F o r w a r d T r a n s f e r A d m i t t a n c e - SDRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT I D - Drain Current - AR D - Ω4DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENTI D - Drain Current - A SWITCHING CHARACTERISTICSI D - Drain Current - At d (o n ), t r , t d (o f f ), t f - S w i t c h i n g T i m e - n sDRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 10.5051020V GS - Gate to Source Voltage - VR D S (o n ) - D r a i n t o S o u r c e O n -S t a t e R e s i s t a n c e - ΩI D = 0.5 A15C i s s , C o s s , C r s s - C a p a c i t a n c e - p FCAPACITANCE vs.DRAIN TO SOURCE VOLTAGEV DS - Drain to Source Voltage - V I S D - D i o d e F o r w a r d C u r r e n t - ASOURCE TO DRAIN DIODEFORWARD VOLTGE10.010.20.40.71V SD - Source to Drain Voltage - V0.80.90.30.50.60.10.0010.0001R D S (o n ) - D r a i n t o S o u r c e O n -S t a t e R e s i s t a n c e - ΩREFERENCEDocument Name Document No.NEC semiconductor device reliability/quality control system TEI-1202Quality grade on NEC semiconductor devices IEI-1209 Semiconductor device mounting technology manual C10535EGuide to quality assurance for semiconductor devices MEI-1202 Semiconductor selection guide X10679E5[MEMO]No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document.NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others.While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customer must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features.NEC devices are classified into the following three quality grades:“Standard“, “Special“, and “Specific“. The Specific quality grade applies only to devices developed based ona customer designated “quality assurance program“ for a specific application. The recommended applicationsof a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application.Standard:Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronicequipment and industrial robotsSpecial:Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designedfor life support)Specific:Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc.The quality grade of NEC devices in “Standard“ unless otherwise specified in NEC's Data Sheets or Data Books.If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact NEC Sales Representative in advance.Anti-radioactive design is not implemented in this product.M4 94.11。

2SK2380资料

3
(0.44) 0.88+0.05 – 0.03
I Features
0.12+0.05 – 0.02
1 2
3°
Unit µA nA V V mS pF pF pF
Silicon Junction FETs (Small Signal)
PD Ta
150 240 Ta=25˚C 125 200 200 VGS=0.4V
unit: mm
M Di ain sc te on na tin nc ue e/ d
1.60±0.05 (0.80)
(0.44)
(0.51)
0.28±0.05 (0.51)
(0.80) (0.80) 1.60+0.05 – 0.03
0.60+0.05 – 0.03
I Absolute Maximum Ratings (Ta = 25°C)
Silicon Junction FETs (Small Signal)
2SK2380
Silicon N-Channel Junction FET
For impedance conversion in low frequency For infrared sensor
0.28±0.05
0.80±0.05
Parameter Symbol Gate to Drain voltage VGDO VGSO ID IG
3°
Ratings −40 −40 ±1 10
Unit V V
Gate to Source voltage Drain current Gate current
mA
Allowable power dissipation Channel temperature Storage temperature