BAV70DW-TP;中文规格书,Datasheet资料

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VH-70说明书

VH-70RFID 手持终端产品信息指南深圳市万全智能技术有限公司拥有不需声明即可对本产品软硬件及手册任意修改的权利。

本手册若有更改，恕不另行通知。

本机的规格和电源以原产地为准。

请确认您所使用的电压符合要求、阅读并了解有关安目录| VH-70产品信息指南1目录1目录 (2)2产品概述 (3)2.1产品特性 (3)2.2包装确认 (4)2.3性能指标 (7)3光盘说明 (8)3.1光盘中开发包文件夹中文件说明 (8)3.2光盘中“D E M O小程序”文件夹中文件说明 (8)3.3光盘中“设备中T E S T”文件夹中文件说明 (9)4常见故障 (11)4.1无线网故障 (11)4.2G P R S故障 (12)4.3其他故障 (13)4.4R F I D故障 (16)5售后服务 (17)5.1支持及服务 (17)5.2服务热线 (19)2产品概述VH-70是北京富天达电子集成技术有限公司公司自主研发、设计、生产的高性价比、坚固耐用的移动手持数据采集终端（Hand-Held Terminal:HHT，俗称“工业PDA”或“移动手持式计算机”）产品系列，VH-70具有高性能、高耐用性、高开放性，能满足在恶劣环境中使用需要。

基于VH-70系列产品可以定制出符合不同行业需要的移动应用解决方案，应用在仓库管理、运输管理、配送管理、门店管理、固定资产管理、生产线数据采集、物料跟踪、产品质量跟踪、设备巡检、现场服务、督察、现场执法、野外作业等领域。

2.1产品特性简单易用功能强大VH-70拥有简单、易用、友好的人机交互界面，在设计上充分考虑以人为本和符合人体工程学的要求。

具有一维条码识别、二维条码识别、HF或UHF RFID标签识别、触摸式带背光彩色反光型TFT 液晶屏、批处理、WLAN通信、GPRS通信、蓝牙通信、键盘或手写输入、手写签名捕获等功能。

随时随地实时移动数据采集VH-70集成了符合Wi-Fi标准的高性能的无线局域网（WLAN）网卡，同时可集成符合各个国家移动通讯标准的GSM/GPRS通信模块，真正让用户实现随时随地实时移动数据采集。

BAV70中文资料_数据手册_参数

H E 2.10
T
0°
2.40 −−−
2.64 10°
MIN 0.035 0.000 0.015 0.003 0.110 0.047 0.070 0.012 0.014
0.083 0°
INCHES
NOM 0.039 0.002 0.017 0.006 0.114 0.051 0.075 0.017 0.021 0.094 −−−
820 W
+10 V
2.0 k 100 mH IF 0.1 mF
50 W OUTPUT PULSE
GENERATOR
D.U.T.
0.1 mF
tr
tp
t
10%
50 W INPUT
SAMPLING
VR
OSCILLOSCOPE
90% INPUT SIGNAL
IF
trr
t
iR(REC) = 1.0 mA IR

SOT−23 (TO−236) CASE 318 STYLE 9
3 CATHODE
ANODE 1
2 ANODE
MARKING DIAGRAM
A4 M G G
1
A4 = Device Code M = Date Code* G = Pb−Free Package
(Note: Microdot may be in either location) *Date Code orientation and/or overbar may
Figure 3. Leakage Current
0.6
0.58
0.56
0.54
0.52
0.5
0.48
0
1

BAV70LT1中文资料

LESHAN RADIO COMPANY, LTD. Monolithic Dual Switching DiodeCommon Cathode共阴极单片双开关二极管3CATHODE阴极DEVICE MARKING器件标识BAV70LT131ANODE阳极 12 2ANODE阳极CASE 318-08, STYLE 9SOT-23 (TO-236AB)BAV70LT1 = A4MAXIMUM RATINGS (EACH DIODE) 最大额定值Rating Symbol Value Unit Reverse Voltage反向电压V R 70 VdcForward Current正向电流I F 200 mAdcPeak Forward Surge Current正向浪涌电流峰值I FM(surge) 500 mAdcTHERMAL CHARACTERISTICS热特性Characteristic Symbol Max Unit Total Device Dissipation FR- 5 Board (1) P D 225 mWT A = 25°CDerate above 25°C FR – 5板的器件总功耗 1.8 mW/°CThermal Resistance, Junction to Ambient R θJA 556 °C/WTotal Device Dissipation P D 300 mWAlumina Substrate, (2) T A = 25°CDerate above 25°C氧化铝基板的器件总功耗 2.4 mW/°CThermal Resistance, Junction to Ambient热阻，结到环境R θJA 417 °C/WJunction and Storage Temperature结温和存储温度T J , T stg -55 to +150 °CELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted) (EACH DIODE)电气特性Characteristic Symbol Min Max Unit OFF CHARACTERISTICS开关特性Reverse Breakdown Voltage反向击穿电压(I (BR) = 100 µAdc)Reverse Voltage Leakage Current反向漏电流电压(V R = 25 Vdc, T J = 150°C)(V R = 70 Vdc)(V R = 70 Vdc, T J = 150°C)Diode Capacitance二极管电容(V R = 0, f = 1.0 MHz) V (BR) 70 —VdcI R µAdc—60— 2.5—100C D — 1.5 pFForward Voltage正向电压(I F = 1.0 mAdc)(I F = 10 mAdc)(I F = 50 mAdc)(I F = 150 mAdc)Reverse Recovery Time反向恢复时间 R L = 100 Ω(I F = I R = 10 mAdc, V R = 5.0 Vdc, I R(REC) = 1.0 mAdc) (Figure 1) V F mVdc—715—855—1000—1250t rr — 6.0 ns1. FR-5 = 1.0 x 0.75 x 0.062 in.2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.G5-1/1。

BAV70;BAV74;BAV70_D87Z;BAV74_D87Z;中文规格书,Datasheet资料

BAV70 / 74Small Signal DiodeAbsolute Maximum Ratings * T A= 25°C unless otherwise noted* These ratings are limiting values above which the serviceability of the diode may be impaired.NOTES:1)These ratings are based on a maximum junction temperature of 150 degrees C.2)These are steady limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.Thermal CharacteristicsElectrical Characteristics T A=25°C unless otherwise notedSymbol ParameterValue Units V RRM Maximum Repetitive Reverse Voltage BAV70BAV747050V V I F(AV)Average Rectified Forward Current 200mA I FSMNon-repetitive Peak Forward Surge CurrentPulse Width = 1.0 secondPulse Width = 1.0 microsecond 1.02.0A A T STG Storage Temperature Range -55 to +150°C T JOperating Junction Temperature150°CSymbol ParameterValue Units P D Power Dissipation350mW R θJAThermal Resistance, Junction to Ambient357°C/WSymbol ParameterTest ConditionsMin.Max.Units V R Breakdown Voltage BAV70BAV74I R = 100µA I R = 5.0µA 7550V V V FForward Voltage BAV70BAV74I F = 1.0mA I F = 10mA I F = 50mA I F = 150mA I F = 100mA7158551.01.251.0mV mV V V V I RReverse Leakage BAV70BAV74V R = 25V, T A = 150°C V R = 70VV R = 70V, T A = 150°C V R = 50VV R = 50V, T A = 150°C 605.010*******µA µA µA nA µA C T Total Capacitance BAV70BAV74V R = 0V, f = 1.0MHz V R = 0V, f = 1.0MHz1.52.0pF pF t rrReverse Recovery Time BAV70BAV74I F = I R = 10mA, I RR = 1.0mA, R L = 100ΩI F = I R = 10mA, I RR = 1.0mA, R L = 100Ω6.04.0ns nsBAV70 / 74Connection Diagram123A4123SOT-23312BAV70 A4 BAV74 JAMARKINGDISCLAIMERFAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.LIFE SUPPORT POLICYFAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.As used herein:1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body,or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user.2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.PRODUCT STATUS DEFINITIONS Definition of TermsDatasheet Identification Product Status DefinitionAdvance InformationFormative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice.PreliminaryFirst ProductionThis datasheet contains preliminary data, andsupplementary data will be published at a later date.Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.No Identification Needed Full ProductionThis datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.Obsolete Not In ProductionThis datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor.The datasheet is printed for reference information only.TRADEMARKSThe following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.FAST ®FASTr™FPS™FRFET™GlobalOptoisolator™GTO™HiSeC™I 2C™i-Lo ™ImpliedDisconnect™ISOPLANAR™LittleFET™MICROCOUPLER™MicroFET™MicroPak™MICROWIRE™MSX™MSXPro™OCX™OCXPro™OPTOLOGIC ®OPTOPLANAR™PACMAN™POP™Power247™PowerEdge™PowerSaver™PowerTrench ®QFET ®QS™QT Optoelectronics™Quiet Series™RapidConfigure™RapidConnect™µSerDes™SILENT SWITCHER ®SMART START™SPM™Stealth™SuperFET™SuperSOT™-3SuperSOT™-6SuperSOT™-8SyncFET™TinyLogic ®TINYOPTO™TruTranslation™UHC™UltraFET ®VCX™A CEx™ActiveArray™Bottomless™CoolFET™CROSSVOLT ™DOME™EcoSPARK™E 2CMOS™EnSigna™FACT™FACT Quiet Series™Across the board. Around the world.™The Power Franchise ®Programmable Active Droop™分销商库存信息:FAIRCHILDBAV70BAV74BAV70_D87Z BAV74_D87Z。

ATAVRFBKIT;中文规格书,Datasheet资料

ATAVRFBKIT / EVLB001 Dimmable Fluorescent Ballast ............................................................................................................................... User GuideSection 1Introduction...........................................................................................1-11.1General Description..................................................................................1-31.2Ballast Demonstrator Features.................................................................1-3 Section 2Ballast Demonstrator Device Features.................................................2-42.1Atmel Supported Products........................................................................2-42.2IXYS® Supported Products.......................................................................2-4 Section 3Microcontroller Port Pin Assignments...................................................3-6 Section 4Ballast Demonstrator Operation...........................................................4-74.1General Requirements..............................................................................4-74.2Startup features........................................................................................4-74.3Circuit Topology........................................................................................4-84.4Startup and PFC Description....................................................................4-84.5Lamp Operation Description...................................................................4-10 Section 5Device Design & Application...............................................................5-135.1Magnetics................................................................................................5-135.2IXYS IXTP02N50D depletion mode Mosfet Used As Current Source....5-135.3IXYS IXD611 Half- bridge MOSFET driver.............................................5-135.4IXYS IXI859 Charge Pump Regulator.....................................................5-145.5IXYS IXTP3N50P PolarHVTM N-Channel Power MOSFET...................5-155.6Clare LDA111S Optocoupler...................................................................5-15 Section 6ATPWMX Demonstrator Software......................................................6-166.1Main_pwmx_fluo_demo.c.......................................................................6-186.2Pfc_ctrl.c.................................................................................................6-196.3Lamp_ctrl.c.............................................................................................6-22 Section 7Conclusion..........................................................................................7-257.1Appendix 1: SWITCH DIM......................................................................7-257.2Appendix 2: Capacitor Coupled Low Voltage Supply..............................7-267.3Appendix 3: PFC Basics.........................................................................7-277.4Appendix 4: Bill Of Material.....................................................................7-287.5Appendix 5: Schematics..........................................................................7-31Section 1Introduction Efficient fluorescent lamps and magnetic ballasts have been the standard lighting fixture in commercial and industrial lighting for many years. Several lamp types, rapid start, high output, and others are available for cost effective and special applications. But incandescent lamps, in spite of the poor light to power ratio, typically one fourth of fluo-rescent, offer one feature - dimming - that hasn’t been available in fluorescent lamps until now. Dimming allows the user to conserve electrical power under natural ambient light or create effects to enhance mood or image presentation and projection for example.Typical rapid start fluorescent lamps have two pins at each end with a filament across the pins. The lamp has argon gas under low pressure and a small amount of mercury in the phosphor coated glass tube. As an AC voltage is applied at each end and the fila-ments are heated, electrons are driven off the filaments that collide with mercury atoms in the gas mixture. A mercury electron reaches a higher energy level then falls back to a normal state releasing a photon of ultraviolet (UV) wavelength. This photon collides with both argon assisting ionization and the phosphor coated glass tube. High voltage and UV photons ionize the argon, increasing gas conduction and releasing more UV pho-tons. UV photons collide with the phosphor atoms increasing their electron energy state and releasing heat. Phosphor electron state decreases and releases a visible light pho-ton. Different phosphor and gas materials can modify some of the lamp characteristics.Introduction Figure 1-1. Fluorescent Tube CompositionSince the argon conductivity increases and resistance across the lamp ends decreases as the gas becomes excited, an inductance (ballast) must be used to limit and control the gas current. In the past, an inductor could be designed to limit the current for a nar-row range of power voltage and frequency. A better method to control gas current is to vary an inductor’s volt-seconds to achieve the desired lamp current and intensity. A vari-able frequency inverter operating from a DC bus can do this. If the inductor is part of an R-L-C circuit, rapid start ignition currents, maximum intensity, and dimming currents are easily controlled depending on the driving frequency versus resonant frequency.A ballast should include a power factor corrector (PFC) to keep the main current and voltage in phase with a very low distortion over a wide range of 90 to 265 VAC 50/60 Hz. With microcontroller control, economical remote analog or digital control of lamp func-tion and fault reporting are a reality. Moreover, adjusting the lamp power to correspond with human perceived light level is possible. An application specific microcontroller brings the designer the flexibility to increase performance and add features to the light-ing product. Some of the possible features are described here in detail. The final design topology is shown in the block diagram of Figure 2-1.Now, a new way of dimming fluorescent lamps fills the incandescent/fluorescent feature gap plus adds many additional desirable features at a very reasonable cost.Introduction1.1General DescriptionFluorescent ballast topology usually includes line conditioning for CE and UL compli-ance, a power factor correction block including a boost converter to 400 V for universal input applications and a half bridge inverter. By varying the frequency of the inverter, the controller will preheat the filaments (high frequency), then ignite the lamp (reducing the frequency). Once the lamp is lit, varying the frequency will dim the light. The Atmel AT90PWM2B/216 microcontroller can be programmed to perform all of these functions.Figure 1-2. Ballast Demonstrator Board1.2BallastDemonstrator Features•Automatic microcontroller dimmable ballast•Universal input – 90 to 265 VAC 50/60 Hz, 90 to 370 VDC •Power Factor Corrected (PFC) boost regulator•Power feedback for stable operation over line voltage range •Variable frequency half bridge inverter •18W, up to 2 type T8 lamps•Automatic dimmable single lamp operation •Automatic detection of Swiss or DALI•Very versatile power saving options with microcontroller design for most functionsSection 2 Ballast Demonstrator Device Features2.1Atmel SupportedProducts AT90PWM2B/216 Microcontroller•High speed comparator for PFC zero crossover detection•6 Analog inputs for A/D conversion, 2.56V reference level•3 Digital inputs used for the dimming control input•3 High speed configurabel PWM outputs used for the PFC and half bridge driver •A fully differential A/D with programmable gain used for efficient current sensing •SOIC 24 pin package•Low power consumption in standby mode2.2IXYS® SupportedProducts IXI859 Charge pump with voltage regulator and MOSFET driver•3.3V regulator with undervoltage lockout•Converts PFC energy to regulated 15VDC•Low propagation delay driver with 15V out and 3V input for PFC FET gateIXTP3N50P MOSFET•500V, low R DS (ON) power MOSFET, 3 used in designIXTP02N50D depletion mode MOSFET•500V, 200mA, normally ON, TO-220 package and configured as current sourceIXD611S MOSFET driver•Up to 600mA drive current•half bridge, high and low side driver in a single surface mount IC•Undervoltage lockoutBallast Demonstrator Device FeaturesLDA111S Optocoupler (by Clare Inc., an IXYS company)•100mA continuous load rating•3750V RMS input to output isolationFigure 2-1. Ballast Demonstrator Block DiagramSection 3 Microcontroller Port Pin AssignmentsPD0PCOUT00PFC_OUTPUT - To IXI859 FET driver inputPD1PSCIN0DUAL_LAMP - Dual lamp detectionPD3TXD/DALI DALI_TX - DALI transmit linePD4RXD/DALI DALI_RX - DALI receive linePD5ADC2LAMP_EOL - Not supported in hardware nor software PD6ADC3V_LAMP - Rectified lamp voltage sense, missing lamp,open or shorted filament, preheat, ignition & run.PD7ACMP0PFC_ZCD - Comparator for PFC zero current crossingsensePB0PSCOUT20INVERTER_L - Low side half bridge driver outputPB1PSCOUT21INVERTER_H - High side half bridge driver outputPB2ADC5V_BUS - 400VDC bus voltage sense for regulation. PB3AMP0-GND - Diff amp - A/D, 1 ohm bus current shunt resistor PB4 AMP0+I_LAMP - Diff amp + A/DPB5ADC6TEMPERATURE - Ambient temperature in lamp housing PB6ADC7SWITCH_CTRL - SWITCH Control inputPB7ADC4V_HAVERSINE - Haversine input sense.PE0RST#RESET - Reset pin for zero crossing detectorPE1 PE1XTAL1PE2 ADC0XTAL2Section 4Ballast Demonstrator Operation 4.1GeneralRequirements•Constant power as determined by DALI or Switch Control400 volt DC bus as provided by a power factor correcting boost regulator (PFC)100% to 2% dimming setting•One or two lamps, type T8 of 18WBallast to compensate automaticallyHardware is capable of up to 40W per lamp•Line voltage of 90 to 265 VAC, 50 or 60 Hz•Control methodDALI power control – auto recognition of control meansOne touch “Switch” dimming100% ON after ignition then dim to the last or currentprogrammed value, if any.4.2Startup features Software based features that are not fully implemented.End users are invited to develop features based on the following characteristics.•Auto re-strike-Missing lamp detection allows a default power of 100% on the remaining lamp withno dimming.-Open filament detection for one or two lamps as determined by combination of400VDC current plus lamp voltage prior to ignition.-On board physical jumper to set for one or two lamp normal operation.•Shorted filament-Detection by voltage sense across lamp during preheat. 400VDC current monitordetects over current limit upon startup. The microcontroller will sense the expectedDC current to the half bridge and resonant circuit relative to the drive frequency.Ballast Demonstrator Operation4.3Circuit Topology Input filter with varistor for noise suppression and protection.PFC / boost circuit including IXI859 MOSFET driverAT90PWM2B/216 microcontroller 24 pin SOIChalf bridge driverhalf bridge power MOSFET stage for up to 2 lampsVoltage driven filaments for wider lamp variety and better stability under all conditions400VDC bus voltage after the PFC boost4.4Startup and PFCDescription Upon application of main power, the microcontroller does not drive the PFC MOSFETQ3. The C9 capacitor is charged to the peak line voltage.The depletion FET Q1 and the Zener Diode provide a DC voltage with enough current tosupply the control portion of the ballast.As soon as the microcontroller requests the ballast to start, the PFC is enabled accord-ing to the following sequence.The microcontroller checks that the DC bus voltage is 90% of the haversine peak andthe under voltage lockout (UVLO) requirements are met, then a series of fixed widthsoft-start pulses are sent to the PFC MOSFET (Q3) at 10 µS at a 20 kHz rate. At verylow load currents the bus voltage should rise to 400V. If the bus rises to 415 VDC allPFC pulses stop. As the 400V drops, the zero crossing detector PD7 starts to sense azero crossing from the PFC transformer secondary. A 400V DC bus and a zero crossingevent start the PFC control loop.Checks are made to detect the presence of the rectified power (haversine) and bus volt-age throughout normal operation. Main supply voltage senses at PB7 < 0.848 (90 VAC)or > 2.497 (265 VAC) peak faults the PFC to off, turns off the PFC MOSFET (Q3) andinitiates a restart.The control consists of measuring the error between VBUS and 400V (2.39V at PB2) todetermine the PFC drive pulse width (PW). The PW is proportional to the error, and hasto be constant over a complete half period. The update is done each time the haversinereaches zero.分销商库存信息: ATMEL ATAVRFBKIT。

BAV70,215;BAV70,235;BAV70T,115;BAV70W,135;BAV70W,115;中文规格书,Datasheet资料

1.Product proﬁle1.1General descriptionHigh-speed switching diodes, encapsulated in small Surface-Mounted Device (SMD)plastic packages.1.2Features1.3ApplicationsI High-speed switchingI General-purpose switching1.4Quick reference data[1]When switched from I F =10mA to I R =10mA; R L =100Ω; measured at I R =1mA.BAV70 seriesHigh-speed switching diodesRev. 07 — 27 November 2007Product data sheetTable 1.Product overviewType numberPackage PackageconﬁgurationConﬁguration NXPJEITA JEDEC BAV70SOT23-TO-236AB smalldual common cathode BAV70M SOT883SC-101-leadless ultra small dual common cathode BAV70S SOT363SC-88-very small quadruple commoncathode/common cathode BAV70T SOT416SC-75-ultra small dual common cathode BAV70WSOT323SC-70-very smalldual common cathodeI High switching speed: t rr ≤4ns I Low capacitance: C d ≤1.5pF I Low leakage currentI Reverse voltage: V R ≤100VI Small SMD plastic packagesTable 2.Quick reference data Symbol Parameter Conditions Min Typ Max Unit Per diode I R reverse current V R =80V--0.5µA V R reverse voltage --100V t rrreverse recovery time[1]--4ns2.Pinning information3.Ordering informationTable 3.PinningPin Description Simpliﬁed outline SymbolBAV70; BAV70T; BAV70W1anode (diode 1)2anode (diode 2)3common cathodeBAV70M 1anode (diode 1)2anode (diode 2)3common cathodeBAV70S 1anode (diode 1)2anode (diode 2)3common cathode (diode 3and diode 4)4anode (diode 3)5anode (diode 4)6common cathode (diode 1and diode2)006aaa144123006aab034132312Transparent top view006aab034132132456006aab104136254Table 4.Ordering informationType numberPackage NameDescriptionVersion BAV70-plastic surface-mounted package; 3leadsSOT23BAV70M SC-101leadless ultra small plastic package; 3solder lands;body 1.0×0.6×0.5mmSOT883BAV70S SC-88plastic surface-mounted package; 6leads SOT363BAV70T SC-75plastic surface-mounted package; 3leads SOT416BAV70WSC-70plastic surface-mounted package; 3leadsSOT3234.Marking[1]* = -: made in Hong Kong * = p: made in Hong Kong * = t: made in Malaysia * = W: made in China5.Limiting valuesTable 5.Marking codesType numberMarking code [1]BAV70A4*BAV70M S4BAV70S A4*BAV70T A4BAV70WA4*Table 6.Limiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134).Symbol Parameter Conditions Min Max Unit Per diode V RRM repetitive peak reverse voltage -100V V R reverse voltage -100V I Fforward current BAV70T amb ≤25°C -215mA BAV70M T s =90°C -150mA BAV70S T s =60°C -250mA BAV70T T s =90°C -150mA BAV70WT amb ≤25°C-175mAI FRMrepetitive peak forward current BAV70-450mA BAV70M -500mA BAV70S -450mA BAV70T -500mA BAV70W-500mA I FSMnon-repetitive peak forward current square wave [1]t p =1µs-4A t p =1ms -1A t p =1s-0.5A[1]T j =25°C prior to surge.[2]Device mounted on an FR4Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint.[3]Reﬂow soldering is the only recommended soldering method.6.Thermal characteristics[1]Device mounted on an FR4PCB, single-sided copper, tin-plated and standard footprint.[2]Reﬂow soldering is the only recommended soldering method.P tottotal power dissipation [2]BAV70T amb ≤25°C -250mW BAV70M T amb ≤25°C [3]-250mW BAV70S T s =60°C -350mW BAV70T T s =90°C -170mW BAV70WT amb ≤25°C-200mWPer device I Fforward current BAV70T amb ≤25°C -125mA BAV70M T s =90°C -75mA BAV70S T s =60°C -100mA BAV70T T s =90°C -75mA BAV70WT amb ≤25°C-100mA T j junction temperature -150°C T amb ambient temperature −65+150°C T stgstorage temperature−65+150°CTable 6.Limiting values …continuedIn accordance with the Absolute Maximum Rating System (IEC 60134).Symbol ParameterConditionsMin Max Unit Table 7.Thermal characteristics Symbol ParameterConditions Min Typ Max UnitPer diode R th(j-a)thermal resistance from junction to ambient in free air[1]BAV70--500K/W BAV70M [2]--500K/W BAV70W--625K/WR th(j-t)thermal resistance from junction to tie-point BAV70--360K/W BAV70W--300K/WR th(j-sp)thermal resistance from junction to solder point BAV70S --255K/W BAV70T--350K/W7.CharacteristicsTable 8.CharacteristicsT amb=25°C unless otherwise speciﬁed.Symbol Parameter Conditions Min Typ Max UnitPer diodeV F forward voltage[1]I F=1mA--715mVI F=10mA--855mVI F=50mA--1VI F=150mA-- 1.25VI R reverse current V R=25V--30nAV R=80V--0.5µAV R=25V;T j=150°C--30µAV R=80V;T j=150°C--100µAC d diode capacitance V R=0V; f=1MHz-- 1.5pFt rr reverse recovery time[2]--4nsV FR forward recovery voltage[3]-- 1.75V[1]Pulse test: t p≤300µs;δ≤0.02.[2]When switched from I F=10mA to I R=10mA; R L=100Ω; measured at I R=1mA.[3]When switched from I F=10mA; t r=20ns.(1)T amb =150°C (2)T amb =85°C (3)T amb =25°C (4)T amb =−40°CBased on square wave currents.T j =25°C; prior to surgeFig 1.Forward current as a function of forwardvoltage; typical valuesFig 2.Non-repetitive peak forward current as afunction of pulse duration; maximum values(1)T amb =150°C (2)T amb =85°C (3)T amb =25°C (4)T amb =−40°Cf =1MHz; T amb =25°CFig 3.Reverse current as a function of reversevoltage; typical values Fig 4.Diode capacitance as a function of reversevoltage; typical values006aab107V F (V)0.21.41.00.6110102103I F (mA)10−1(1)(2)(3)(4)mbg704101102I FSM (A)10−1t p (µs)110410310102006aab10810−210−410−310110−1102I R (µA)10−5V R (V)10080406020(1)(2)(3)(4)08161240.80.60.40.2mbg446V R (V)C d (pF )8.Test information(1)I R =1mAInput signal: reverse pulse rise time t r =0.6ns; reverse voltage pulse duration t p =100ns; duty cycle δ=0.05Oscilloscope: rise time t r =0.35nsFig 5.Reverse recovery time test circuit and waveformsInput signal: forward pulse rise time t r =20ns; forward current pulse duration t p ≥100ns; duty cycle δ≤0.005Fig 6.Forward recovery voltage test circuit and waveformst rr(1)+ I Ftoutput signalt rt pt10 %90 %V Rinput signal V = V R + I F × R SR S = 50 ΩI FD.U.T.R i = 50 ΩSAMPLING OSCILLOSCOPEmga881t rtt p 10 %90 %Iinput signalR S = 50 ΩIR i = 50 ΩOSCILLOSCOPE1 k Ω450 ΩD.U.T.mga882V FRtoutput signalV9.Package outlineFig 7.Package outline BAV70(SOT23/TO-236AB)Fig 8.Package outline BAV70M (SOT883/SC-101)Fig 9.Package outline BAV70S (SOT363/SC-88)Fig 10.Package outline BAV70T (SOT416/SC-75)Fig 11.Package outline BAV70W (SOT323/SC-70)04-11-04Dimensions in mm0.450.151.91.10.93.02.82.52.1 1.41.20.480.380.150.0912303-04-03Dimensions in mm0.620.550.550.470.500.460.650.200.123210.300.220.300.221.020.950.3506-03-16Dimensions in mm0.250.100.30.2pin 1index1.30.652.22.0 1.351.152.21.8 1.10.80.450.1513246504-11-04Dimensions in mm0.950.601.81.41.751.450.90.70.250.1010.300.151230.450.1504-11-04Dimensions in mm0.450.151.10.82.21.82.22.0 1.351.151.30.40.30.250.1012310.Packing information[1]For further information and the availability of packing methods, see Section 14.[2]T1: normal taping [3]T2: reverse taping11.SolderingTable 9.Packing methodsThe indicated -xxx are the last three digits of the 12NC ordering code.[1]Type number Package DescriptionPacking quantity 300010000BAV70SOT234mm pitch, 8mm tape and reel -215-235BAV70M SOT8832mm pitch, 8mm tape and reel --315BAV70S SOT3634mm pitch, 8mm tape and reel; T1[2]-115-1354mm pitch, 8mm tape and reel; T2[3]-125-165BAV70T SOT4164mm pitch, 8mm tape and reel -115-135BAV70WSOT3234mm pitch, 8mm tape and reel-115-135Fig 12.Reﬂow soldering footprint BAV70(SOT23/TO-236AB)solder resistoccupied areasolder landssolder paste Dimensions in mmsot0231.000.60(3x)1.301232.503.000.85 2.702.900.50 (3x)0.60 (3x)3.300.85Fig 13.Wave soldering footprint BAV70(SOT23/TO-236AB)Reﬂow soldering is the only recommended soldering method.Fig 14.Reﬂow soldering footprint BAV70M (SOT883/SC-101)sot0234.004.60 2.804.501.203.403211.20 (2x)preferred transport direction during solderingDimensions in mmsolder resist occupied areasolder lands solder lands solder pastesolder resist occupied areaDimensions in mm1.300.30R = 0.05 (12×)R = 0.05 (12×)0.600.700.800.900.30(2×)0.35(2×)0.200.40(2×)0.50(2×)0.25(2×)0.300.400.50分销商库存信息:NXPBAV70,215BAV70,235BAV70T,115 BAV70W,135BAV70W,115BAV70S,115 BAV70M,315BAV70S,135。

MCC BAV70WT 电路切换二极管数据手册说明书

Device Part Number-TP
BAV70WT
Packing Tape&Reel: 3Kpcs/Reel
***IMPORTANT NOTICE***
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BAV70-V中文资料

BAV70-VDocument Number 85546 Rev. 1.7, 09-Mar-06Vishay Semiconductors1Small Signal Switching Diode, DualFeatures•Silicon Epitaxial Planar Diode•Fast switching dual diode with commoncathode•This diode is also available in other con-figurations including:a dual common anode tocathode with type designation BAV99-V, a dualcommon anode with type designation BAW56-V,and a single diode with type designation BAL99-V. •Lead (Pb)-free component•Component in accordance to RoHS 2002/95/EC and WEEE 2002-96/ECMechanical Data Case: SOT23 Plastic case Weight: approx. 8.8 mg Packaging Codes/Options:GS18 / 10 k per 13" reel (8 mm tape), 10 k/box GS08 / 3 k per 7" reel (8 mm tape), 15 k/boxParts TableAbsolute Maximum Ratings T amb = 25°C, unless otherwise specified 1) Device on fiberglass substrate, see layoutPart Ordering code Marking Remarks BAV70-V BAV70-V-GS18 or BAV70-V-GS08JJ T ape and ReelParameter T est condition Symbol Value Unit Reverse voltage, peak reversevoltageV R, V RM70V Forward current (continuous)I F250mA Non repetitive peak forwardcurrentt p = 1 µs I FSM2At p = 1 ms I FSM1At p = 1 s I FSM0.5A Power dissipation P tot3501)mW 2Document Number 85546Rev. 1.7, 09-Mar-06BAV70-VVishay Semiconductors Thermal CharacteristicsT amb = 25°C, unless otherwise specified1)Device on Fiberglass substrate, see layout on second page.Electrical CharacteristicsT amb = 25°C, unless otherwise specifiedTypical CharacteristicsT amb = 25°C, unless otherwise specifiedParameterT est condition Symbol Value Unit Thermal resistance junction to ambient air R thJA 4301)°C/W Junction temperature T j 150°C Storage temperature rangeT j = T stg- 65 to + 150°CParameterTest conditionSymbol MinTyp.Max Unit Forward voltageI F = 1 mA V F 715mV I F = 10 mA V F 855mV I F = 50 mA V F 1V I F = 150 mAV F 1.25VReverse currentV R = 70 VI R 2.5µA V R = 70 V , T j = 150°C I R 50µA V R = 25 V , T j = 150°CI R 30µA Diode capacitance V R = 0, f = 1 MHz C D 1.5pF Reverse recovery timeI F = 10 mA to I R = 1 mA, V R = 6 V , R L = 100 Ωt rr6nsFigure 1. Forward Current vs. Forward VoltageV F -For w ard V oltage (V )14356Figure 2. Peak forward current I FM = f (t p )BAV70-VDocument Number 85546Rev. 1.7, 09-Mar-06Vishay Semiconductors3Package Dimensions in mm (Inches) 4Document Number 85546 Rev. 1.7, 09-Mar-06BAV70-VVishay SemiconductorsOzone Depleting Substances Policy StatementIt is the policy of Vishay Semiconductor GmbH to1.Meet all present and future national and international statutory requirements.2.Regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment.It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs).The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances.Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents.1.Annex A, B and list of transitional substances of the Montreal Protocol and the L ondon Amendmentsrespectively2.Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the EnvironmentalProtection Agency (EPA) in the USA3.Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances.We reserve the right to make changes to improve technical designand may do so without further notice.Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use.Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, GermanyDocument Number: 91000Revision: 18-Jul-081DisclaimerLegal Disclaimer NoticeVishayAll product specifications and data are subject to change without notice.Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product.Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products.No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay.The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications.Product names and markings noted herein may be trademarks of their respective owners.元器件交易网。

BAV74LT1G;BAV74LT1;BAV74LT3G;中文规格书,Datasheet资料

© Semiconductor Components Industries, LLC, 2009 August, 2009 − Rev. 51Publication Order Number:BAV74LT1/DBAV74LT1GMonolithic DualSwitching DiodeFeatures•These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS CompliantMAXIMUM RATINGS (EACH DIODE)Rating Symbol Value Unit Reverse Voltage V R50Vdc Forward Current I F200mAdc Peak Forward Surge Current I FM(surge)500mAdc THERMAL CHARACTERISTICSCharacteristic Symbol Max UnitTotal Device Dissipation FR−5 Board (Note 1), T A = 25°CDerate above 25°C PD2251.8mWmW/°CThermal Resistance, Junction−to−Ambient R q JA556°C/WTotal Device Dissipation Alumina Substrate, (Note 2) T A = 25°C Derate above 25°C P D3002.4mWmW/°CThermal Resistance, Junction−to−Ambient R q JA417°C/W Junction and Storage Temperature T J, T stg−55 to +150°C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the RecommendedOperating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.1.FR−5 = 1.0 0.75 0.062 in.2.Alumina = 0.4 0.3 0.024 in 99.5% alumina.SOT−23CASE 318STYLE 9MARKING DIAGRAMDevice Package Shipping†ORDERING INFORMATIONBAV74LT1G SOT−23(Pb−Free)3000/Tape & Reel†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our T ape and Reel Packaging Specifications Brochure, BRD8011/D.312BAV74LT3G SOT−23(Pb−Free)10,000/T ape & Reel1JA M GGJA= Device CodeM= Date Code*G= Pb−Free Package(Note: Microdot may be in either location)*Date Code orientation and/or overbar may vary depending upon manufacturing location.2ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted) (EACH DIODE)CharacteristicSymbolMinMaxUnitOFF CHARACTERISTICS Reverse Breakdown Voltage (I (BR) = 5.0 m Adc)V (BR)50−Vdc Reverse Voltage Leakage Current, (Note 3)(V R = 50 Vdc, T J = 125°C)(V R = 50 Vdc)I R−−1000.1m AdcDiode Capacitance(V R = 0, f = 1.0 MHz)C D − 2.0pF Forward Voltage (I F = 100 mAdc)V F − 1.0Vdc Reverse Recovery Time(I F = I R = 10 mAdc, I R(REC) = 1.0 mAdc, measured at I R = 1.0 mA, R L = 100 W )t rr−4.0ns3.For each individual diode while the second diode is unbiased.100V F , FORWARD VOLTAGE (VOLTS)101.00.110V R , REVERSE VOLTAGE (VOLTS)1.00.10.010.0011.00V R , REVERSE VOLTAGE (VOLTS)0.90.80.70.6C D , D I O D E C A P A C I T A N C E (p F )2468I F , F O R W A R D C U R R E N T (m A )Figure 1. Forward Voltage Figure 2. Leakage CurrentFigure 3. CapacitanceI R , R E V E R S E C U R R E N T (μA )Curves Applicable to Each AnodePACKAGE DIMENSIONSSOT −23 (TO −236)CASE 318−08ISSUE ANNOTES:1.DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.2.CONTROLLING DIMENSION: INCH.3.MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEADTHICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL.4.318−01 THRU −07 AND −09 OBSOLETE, NEW STANDARD 318−08.SOLDERING FOOTPRINT*VIEW CDIM A MIN NOM MAX MIN MILLIMETERS0.89 1.00 1.110.035INCHESA10.010.060.100.001b 0.370.440.500.015c 0.090.130.180.003D 2.80 2.90 3.040.110E 1.20 1.30 1.400.047e 1.78 1.90 2.040.070L 0.100.200.300.0040.0400.0440.0020.0040.0180.0200.0050.0070.1140.1200.0510.0550.0750.0810.0080.012NOM MAX L1STYLE 9:PIN 1.ANODE2.ANODE3.CATHODE2.10 2.40 2.640.0830.0940.104H E 0.350.540.690.0140.0210.029*For additional information on our Pb −Free strategy and solderingdetails, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.PUBLICATION ORDERING INFORMATION分销商库存信息:ONSEMIBAV74LT1G BAV74LT1BAV74LT3G。

70寸液晶交互平板详细参数 (1)

70寸液晶交互平板及其他配套产品、设备1 硬件部分1.屏幕类型：LED背光，显示尺寸：70”（对角线），显示比例：16：9（全屏）物理分辨率：1920*1080；2.易维护模块化的外观设计，整机采用金属结构，表面无尖锐边缘或突起；3.前维护：一体化模块前拆式设计，可实现正面，无需工具进行快速拆装维护。

4.★屏幕左右两侧各具备不少于15个同教学软件功能紧密结合的快捷键，其中至少包含一个自定义键，并且单击任意快捷键就能打开教学软件；5.内置前朝向2*15W扬声器，保证扩声音质，并且具有单独试听系统，黑屏状态下声音正常输出。

6.提供前置输入接口：HDMI*1，MIC*1，USB触控*1，USB多媒体*1，电脑USB*17.★提供前置按键：前面板具备不少于8个的隐藏式按键设计，使用过后可以关起外盖，保护接口；8.采用红外六点触控技术9.★具备智能温控系统，投标产品具备有效监控、预警和断电保护功能。

（需提供检测报告）；10.★可根据环境光和灯光的变化，自动调整显示亮度，在有效保护教师和学生视力的同事，强化节能。

(需提供检测报告)11.★具备双系统(Windows系统+安卓系统)备份功能，可触控屏幕菜单。

可实现无PC状态批注。

12.★预装定制安卓系统，可正常安装市面上所有安卓APP，寓教于乐丰富教学形式，可实现无PC状态批注。

13.信号源窗口预览功能，可直接点击预览窗口切换至此信号源,不借助任何实体按键，实现信号源与触控同步切换14.可对任意信号源画面进行批注15.★无PC状态下，不借助遥控器和任何实体按键可对PPT文件进行播放，手势翻页、批注；16.★无PC状态下，可实现单点书写，多点擦除，可根据手指间距调整擦除范围。

17.智能工具栏内容会根据当前应用智能调整。

18.★无PC状态下，可调出多项快捷小工具：计算器、倒计时、日历；19.★无PC状态下，实时显示屏体温度，并可根据温度变化显示不同颜色进行提示。

★资质部分（必须满足）：1.为保证产品质量、供货进度及将来便利维护，本次投标商所投交互平板产品必须为原厂产品，要求交互平板产品CCC证书的申请人、制造商、生产厂为同一企业。

BAV70中文资料

DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D088
BAV70 High-speed double diode
Product speciﬁcation Supersedes data of 1997 Nov 24
1999 May 05
Philips Semiconductors
Fig.1 Simplified outline (SOT23) and symbol.
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
Per diode VRRM VR IF
High-speed double diode
Product speciﬁcation
BAV70
FEATURES
• Small plastic SMD package • High switching speed: max. 4 ns • Continuous reverse voltage:
max. 70 V • Repetitive peak reverse voltage:
200
Fig.5 Reverse current as a function of junction temperature.
handbook0, .h8alfpage Cd (pF)
0.6
MBG446
0.4
0.2
0
0
4
8
12 VR (V) 16
f = 1 MHz; Tj = 25 °C.

BYV72EW-200,127;中文规格书,Datasheet资料

Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
VR = 150 V/ 200 V VF ≤ 0.85 V IO(AV) = 30 A IRRM = 0.2 A trr ≤ 28 ns
SOT429 (TO247)
1 23
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
IRRM IRSM Tstg Tj
Average rectified output current square wave
-
(both diodes conducting)1
δ = 0.5; Tmb ≤ 104 ˚C
Repetitive peak forward current t = 25 µs; δ = 0.5;
ESD LIMITING VALUE
SYMBOL PARAMETER
VC
Electrostatic discharge
capacitor voltage
CONDITIONS
Human body model; C = 250 pF; R = 1.5 kΩ
MAX.
-150 150 150 150
-200 200 200 200
D.U.T.
Current shunt
to ’scope
Fig.3. Circuit schematic for trr2
PF / W 20

BAV199DW-7-F;BAV199DW-7;中文规格书,Datasheet资料

SOT-363
AC
1
C2
A2
TOP VIEW
A1
C1
AC
2
TOP VIEW
Internal Schematic
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic
Symbol
Value
Unit
Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage
1 of 4
August 2009
© Diodes Incorporated
PD, POWER DISSIPATION (mW)
300 250
200
150
100
50
0
0
25 50 75 100 125 150
TA, AMBIENT TEMPERATURE (°C) Fig. 1 Power Derating Curve, Total Package
Notes:
1. Short duration pulse test used to minimize self-heating effect. 2. Part mounted on FR-4 PC board with recommended pad layout, which can be found on our website at /datasheets/ap02001.pdf. 3. No purposefully added lead. 4. Diodes Inc.'s "Green" policy can be found on our website at /products/lead_free/index.php. 5. Product manufactured with Date Code UO (week 40, 2007) and newer are built with Green Molding Compound. Product manufactured prior to Date

BAV70_SER

BAV70_SERBAV70seriesHigh-speedswitchingdiodes1.Productprofile1.1GeneraldescriptionHigh-speedswitchingdiodes,encapsulatedinsmallSurface-MountedDevice(SMD)plasticpackages.1.2Features1.3ApplicationsnHigh-speedswitchingnGeneral-purposeswitching1.4Quickreferencedata[1]WhenswitchedfromIF=10mAtoIR=10mA;RL=100?;measuredatIR=1mA.Rev.07—27November2007Productdatasheet Table1.Productoverview TypenumberPackagePackageconfigurationConfigurationNXPJEITAJEDECBAV70SOT23-TO-236ABsmalldualcommoncathode BAV70MSOT883SC-101-leadlessultrasmalldualcommoncathodeBAV70SSOT363SC-88-verysmallquadruplecommon cathode/commoncathodeBAV70TSOT416SC-75-ultrasmalldualcommoncathode BAV70WSOT323SC-70-verysmalldualcommoncathode nHighswitchingspeed:trr≤4nsnLowcapacitance:Cd≤1.5pF nLowleakagecurrentnReversevoltage:VR≤100VnSmallSMDplasticpackagesTable2.QuickreferencedataSymbolParameterConditionsMinTypMaxUnit PerdiodeIRreversecurrentVR=80V--0.5μAVRreversevoltage--100Vtrrreverserecoverytime[1]--4nsNXPSemiconductorsBAV70series High-speedswitchingdiodes2.Pinninginformation3.OrderinginformationTable3.Pinning PinDescriptionSimplifiedoutlineSymbol BAV70;BAV70T;BAV70W1anode(diode1)2anode(diode2)3commoncathodeBAV70M1anode(diode1)2anode(diode2)3commoncathodeBAV70S1anode(diode1)2anode(diode2)3commoncathode(diode3 anddiode4)4anode(diode3)5anode(diode4)6commoncathode(diode1 anddiode2)006aaa144123006aab034132312 Transparent topview 006aab034 132132456006aab104 136254Table4.OrderinginformationTypenumberPackageNameDescriptionVersionBAV70-plasticsurface-mountedpackage;3leadsSOT23BAV70MSC-101leadlessultrasmallplasticpackage;3solderlands;body1.0×0.6×0.5mmSOT883BAV70SSC-88plasticsurface-mountedpackage;6leadsSOT363BAV70TSC-75plasticsurface-mountedpackage;3leadsSOT416BAV70WSC-70plasticsurface-mountedpackage;3leadsSOT323BAV70_SER_7?NXPB.V.2007.Allrightsreserved.ProductdatasheetRev.07—27November20072of15NXPSemiconductorsBAV70series High-speedswitchingdiodes 4.Marking[1]=-:madeinHongKong=p:madeinHongKong=t:madeinMalaysia=W:madeinChina5.LimitingvaluesTable5.Markingcodes TypenumberMarkingcode [1]BAV70A4BAV70MS4BAV70SA4BAV70TA4BAV70WA4Table6.LimitingvaluesInaccordancewiththeAbsoluteMaximumRatingSystem(IEC60 134).SymbolParameterConditionsMinMaxUnitPerdiodeVRRMrepetitivepeakreversevoltage-100VVRreversevoltage-100VIF forwardcurrent BAV70Tamb≤25°C-215mA BAV70MTs=90°C-150mA BAV70STs=60°C-250mA BAV70TTs=90°C-150mA BAV70WTamb≤25°C-175mAIFRM repetitivepeakforward currentBAV70-450mABAV70M-500mABAV70S-450mABAV70T-500mABAV70W-500mAIFSMnon-repetitivepeakforward currentsquarewave[1]tp=1μs-4Atp=1ms-1Atp=1s-0.5ABAV70_SER_7?NXPB.V.2007.Allrightsreserved. ProductdatasheetRev.07—27November20073of15 NXPSemiconductorsBAV70seriesHigh-speedswitchingdiodes[1]Tj=25°Cpriortosurge.[2]DevicemountedonanFR4Printed-CircuitBoard(PCB),single-sidedcopper,tin-platedandstandard footprint.[3]Reflowsolderingistheonlyrecommendedsolderingmethod.6.ThermalcharacteristicsPtottotalpowerdissipation[2]BAV70Tamb≤25°C-250mWBAV70MTamb≤25°C[3]-250mW BAV70STs=60°C-350mW BAV70TTs=90°C-170mW BAV70WT amb≤25°C-200mW PerdeviceIF forwardcurrent BAV70Tamb≤25°C-125mA BAV70MTs=90°C-75mA BAV70STs=60°C-100mA BAV70TTs=90°C-75mA BAV70WTamb≤25°C-100mATjjunctiontemperature-150°CTambambienttemperature?65+150°CTstgstoragetemperature?65+150°CTable6.Limitingvalues…continuedInaccordancewiththeAbsoluteMaximumRatingSystem(IEC60 134).SymbolParameterConditionsMinMaxUnitTable7.Thermalcharacteristics SymbolParameterConditionsMinTypMaxUnit PerdiodeRth(j-a)thermalresistancefrom junctiontoambientinfreeair[1]BAV70--500K/WBAV70M[2]--500K/WBAV70W--625K/WRth(j-t)thermalresistancefromjunctiontotie-pointBAV70--360K/WBAV70W--300K/WRth(j-sp)thermalresistancefromjunctiontosolderpointBAV70S--255K/WBAV70T--350K/WBAV70_SER_7?NXPB.V.2007.Allrightsreserved.ProductdatasheetRev.07—27November20074of15[1]DevicemountedonanFR4PCB,single-sidedcopper,tin-platedandstandardfootprint.[2]Reflowsolderingistheonlyrecommendedsolderingmethod.NXPSemiconductorsBAV70series High-speedswitchingdiodes 7.Characteristics[1]Pulsetest:tp≤300μs;δ≤0.02.[2]WhenswitchedfromIF=10mAtoIR=10mA;RL=100?;measuredatIR=1mA.[3]WhenswitchedfromIF=10mA;tr=20ns.Table8.CharacteristicsTamb=25°Cunlessotherwisespecified. SymbolParameterConditionsMinTypMaxUnit PerdiodeVFforwardvoltage[1]IF=1mA--715mV IF=10mA--855mV IF=50mA--1VIF=150mA--1.25V IR reversecurrentVR=25V--30nA VR=80V--0.5μAVR=25V;Tj=150°C--30μA VR=80V;Tj=150°C--100μACd diodecapacitanceVR=0V;f=1MHz--1.5pFtrr reverserecoverytime [2]--4nsVFR forwardrecoveryvoltage [3]--1.75VBAV70_SER_7?NXPB.V.2007.Allrightsreserved. ProductdatasheetRev.07—27November20075of15 NXPSemiconductorsBAV70seriesHigh-speedswitchingdiodes(1)Tamb=150°C(2)Tamb=85°C(3)Tamb=25°C(4)Tamb=?40°C Basedonsquarewavecurrents.Tj=25°C;priortosurgeFig1.Forwardcurrentasafunctionofforward voltage;typicalvaluesFig2.Non-repetitivepeakforwardcurrentasa functionofpulseduration;maximumvalues (1)Tamb=150°C(2)Tamb=85°C(3)Tamb=25°C(4)Tamb=?40°Cf=1MHz;Tamb=25°CFig3.Reversecurrentasafunctionofreverse voltage;typicalvaluesFig4.Diodecapacitanceasafunctionofreverse voltage;typicalvalues006aab107VF(V)0.21.41.00.6 110102103IF(mA)10-1(1)(2)(3)(4)mbg704 101102IFSM(A)101tp(μs) 110410310102006aab108 10-210-410-310110-1102IR(mA)10-5VR(V) 010*********(1)(2)(3)(4)08161240.80.60.40.2mbg446VR(V)Cd(pF)BAV70_SER_7?NXPB.V.2007.Allrightsreserved.ProductdatasheetRev.07—27November20076of15 NXPSemiconductorsBAV70seriesHigh-speedswitchingdiodes8.Testinformation(1)IR=1mAInputsignal:reversepulserisetimetr=0.6ns;reversevoltagepulsedurationtp=100ns;dutycycleδ=0.05Oscilloscope:risetimetr=0.35nsFig5.Reverserecoverytimetestcircuitandwaveforms Inputsignal:forwardpulserisetimetr=20ns;forwardcurrentpulsedurationtp≥100ns;dutycycleδ≤0.005Fig6.Forwardrecoveryvoltagetestcircuitandwaveforms trr(1)+IFtoutputsignaltrtpt10%90%VR inputsignal V=VR+IF·RSRS=50WIFD.U.T.Ri=50W SAMPLING OSCILLOSCOPEmga881trttp10%90%I inputsignal RS=50?IRi=50?OSCILLOSCOPE1k?450?D.U.T.mga882VFRtoutputsignalVBAV70_SER_7?NXPB.V.2007.Allrightsreserved. ProductdatasheetRev.07—27November20077of15 NXPSemiconductorsBAV70seriesHigh-speedswitchingdiodes9.PackageoutlineFig7.PackageoutlineBAV70(SOT23/TO-236AB)Fig8.PackageoutlineBAV70M(SOT883/SC-101)Fig9.PackageoutlineBAV70S(SOT363/SC-88)Fig10.PackageoutlineBAV70T(SOT416/SC-75)04-11-04Dimensionsinmm0.450.151.91.10.93.02.82.52.11.41.20.480.380.150.0912303-04-03Dimensionsinmm 0.620.550.550.470.500.460.650.200.123210.300.220.300.221.020.950.3506-03-16Dimensionsinmm 0.250.100.30.2 pin1 index 1.3 0.65 2.2 2.0 1.351.152.2 1.8 1.1 0.8 0.45 0.1513246504-11-04Dimensionsinmm 0.950.601.81.41.751.450.90.70.250.1010.300.151230.450.1504-11-04Dimensionsinmm 0.450.151.10.82.21.82.22.01.351.151.30.40.30.250.10123BAV70_SER_7?NXPB.V.2007.Allrightsreserved.ProductdatasheetRev.07—27November20078of15Fig11.PackageoutlineBAV70W(SOT323/SC-70)NXPSemiconductorsBAV70seriesHigh-speedswitchingdiodes10.Packinginformation[1]Forfurtherinformationandtheavailabilityofpackingmethod s,seeSection14.[2]T1:normaltaping[3]T2:reversetaping11.SolderingTable9.PackingmethodsTheindicated-xxxarethelastthreedigitsofthe12NCorderingcode.[1]TypenumberPackageDescriptionPackingquantity300010000BAV70SOT234mmpitch,8mmtapeandreel-215-235BAV70MSOT8832mmpitch,8mmtapeandreel--315BAV70SSOT3634mmpitch,8mmtapeandreel;T1[2]-115-1354mmpitch,8mmtapeandreel;T2[3]-125-165BAV70TSOT4164mmpitch,8mmtapeandreel-115-135 BAV70WSOT3234mmpitch,8mmtapeandreel-115-135 Fig12.ReflowsolderingfootprintBAV70(SOT23/TO-236AB) solderresistoccupiedareasolderlandssolderpasteDimensionsinmmsot0231.000.60(3x)1.301232.503.000.852.702.900.50(3x)0.60(3x)3.300.85BAV70_SER_7?NXPB.V.2007.Allrightsreserved. ProductdatasheetRev.07—27November20079of15 NXPSemiconductorsBAV70seriesHigh-speedswitchingdiodesFig13.WavesolderingfootprintBAV70(SOT23/TO-236AB)Reflowsolderingistheonlyrecommendedsolderingmethod. Fig14.ReflowsolderingfootprintBAV70M(SOT883/SC-101) sot0234.004.602.804.501.203.403211.20(2x) preferredtransportdirectionduringsoldering Dimensionsinmmsolderresistoccupiedareasolderlands solderlands solderpaste solderresist occupiedarea Dimensionsinmm1.300.30R=0.05(12·)R=0.05(12·) 0.600.700.800.900.30(2·)0.35(2·)0.200.40。

WP710A10VBCD;中文规格书,Datasheet资料

Electrical / Optical Characteristics at TA=25°C
Symbol λpeak λD [1] Δλ1/2 C VF [2] IR Parameter Peak Wavelength Dominant Wavelength Spectral Line Half-width Capacitance Forward Voltage Reverse Current Device Blue Blue Blue Blue Blue Blue Typ. 465 470 22 100 3.3 4 50 Max. Units nm nm nm pF V uA Test Conditions IF=20mA IF=20mA IF=20mA VF=0V;f=1MHz IF=20mA VR = 5V
SPEC NO: DSAL0562 APPROVED: WYNEC
REV NO: V.3B CHECKED: Allen Liu
DATE: MAR/21/2012 DRAWN: C.H.Han
PAGE: 6 OF 6 ERP: 1101029227
/
分销商库存信息:
Units mW mA mA V
SPEC NO: DSAL0562 APPROVED: WYNEC
REV NO: V.3B CHECKED: Allen Liu
DATE: MAR/21/2012 DRAWN: C.H.Han
PAGE: 2 OF 6 ERP: 1101029227
/
PACKING & LABEL SPECIFICATIONS
WP710A10VBC/D
SPEC NO: DSAL0562 APPROVED: WYNEC

NXP BAV70高速开关二极管

1 2 3 1 2 3
006aab104
6
5
4
6
5
4
3. Ordering information
Table 4. Ordering information Package Name BAV70 BAV70M BAV70S BAV70T BAV70W SC-101 SC-88 SC-75 SC-70 Description plastic surface-mounted package; 3 leads leadless ultra small plastic package; 3 solder lands; body 1.0 0.6 0.5 mm plastic surface-mounted package; 6 leads plastic surface-mounted package; 3 leads plastic surface-mounted package; 3 leads Version SOT23 SOT883 SOT363 SOT416 SOT323 Type number
Product data sheet
Rev. 8 — 18 March 2015
3 of 16
NXP Semiconductors
BAV70 series
High-speed switching diodes
Table 6. Limiting values …continued In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Ptot Parameter total power dissipation BAV70 BAV70M BAV70S BAV70T BAV70W Per device IF forward current BAV70 BAV70M BAV70S BAV70T BAV70W Tj Tamb Tstg

BAV70WT1资料

IR1 IR2 CD VF
— — —
5.0 100 1.5
µAdc nAdc pF mVdc
— — — — trr VRF — —
715 855 1000 1250 6.0 1.75 ns V

0.062 in. 0.024 in. 99.5% alumina.
Thermal Clad is a trademark of the Bergquist Company
Preferred devices are Motorola recommended choices for future use and best overall value.
Motorola Small–Signal Transistors, FETs and Diodes Device Data © Motorola, Inc. 1997
1.0
TA = 55°C 0.01 TA = 25°C
0.1 0.2 0.4 0.6 0.8 1.0 VF, FORWARD VOLTAGE (VOLTS) 1.2
0.001 0 10 20 30 40 VR, REVERSE VOLTAGE (VOLTS) 50
Figure 3. Forward Voltage
1
元器件交易网 BAV70WT1
BAV70
RS = 50 Ω IF SAMPLING OSCILLOSCOPE RL = 50 Ω
tr
tp I 10% +IF trr OUTPUT PULSE
VR
90% INPUT PULSE
10% OF
VR 100 W
Figure 1. Recovery Time Equivalent Test Circuit

BAS16T-TP;BAV70T-TP;BAW56T-TP;BAV99T-TP;中文规格书,Datasheet资料

0.1
0.01
0.001
0.0001 0 50 100 150 200 Tj, JUNCTION TEMPERATURE (° C) Fig. 3istics
Revision: A

2 of 3
2011/01/01
/
B
C
Electrical Characteristics @ 25qC Unless Otherwise Specified
Peak Repetitive Reverse Voltage Continuous Forward Current Power Dissipation Peak Forward Surge Current @t=1.0us @t=1.0ms @t=1.0s Maximum Instantaneous Forward Voltage Maximum DC Reverse Current At Rated DC Blocking Voltage Typical Total Capacitance Reverse Recovery Time VRRM IF PD IFSM 85V 75mA 150mW 4.0A 1.0A 0.5A 715mV 855mV 1000mV 1250mV 2PA 0.03PA 1.5pF 4nS IF = 1mA IF = 10mA; IF = 50mA IF = 150mA VR=75Volts VR=25Volts Measured at 1.0MHz, VR=0V IF = IR = 10mA, Irr = 0.1 x IR, RL = 100:
MCC
Micro Commercial Components
TM
Ordering Information :

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BAV70DW
200mW
Switching Diodes
75 Volts
Features
• Fast switching speed
• Ultra-Small surface mount package
• For general purpose switching applications •
High conductance
omp onents 20736 Marilla Street Chatsworth
! "# $ % ! "#
www.mccsemi .com
Revision: A 2011/01/01
Micro Commercial Components
1 of 3Lead Free Finish/Rohs Compliant ("P"Suffix designates
RoHS Compliant. See ordering information)
Epoxy meets UL 94 V-0 flammability rating /
BAV70DW
www.mccsemi .com
Revision: A 2011/01/01Micro Commercial Components
2 of 3
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Revision: A 2011/01/01
Micro Commercial Components
www.mccsemi .com
3 of 3
Device
Packing
Part Number-TP Tape&Reel: 3Kpcs/Reel
Ordering Information :
***IMPORTANT NOTICE***
Micro Commercial Components Corp. reserve s the right to make changes without further notice to any product herein to make corrections, modifications , enhancements , improvements , or other changes . Micro Commercial Components Corp . does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights ,nor the rights of others . The user of products in such applications shall assume all risks of such use and will agree to hold Micro Commercial Components Corp . and all the companies whose products are represented on our website, harmless against all damages.
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Counterfeiting of semiconductor parts is a growing problem in the industry. Micro Commercial Components (MCC) is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. MCC strongly encourages customers to purchase MCC parts either directly from MCC or from Authorized MCC Distributors who are listed by country on our web page cited below . Products customers buy either from MCC directly or from Authorized MCC Distributors are genuine parts, have full traceability, meet MCC's quality standards for handling and storage. MCC will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. MCC is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors.
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分销商库存信息: MICRO-COMMERICAL-CO BAV70DW-TP。