ALGAAS LASER
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专利名称:ALGAAS LASER
发明人:KOKUBO YOSHIHIRO 申请号:JP7570789
申请日:19890327
公开号:JPH02253683A
公开日:
19901012
专利内容由知识产权出版社提供
摘要:PURPOSE:To improve the reproducibility and laser characteristics by a method wherein a GaAs layer having a thickness less than 100Angstrom is provided so as to touch a diffraction grating and the respective ridges of the diffraction grating are isolated from each other by the GaAs layer. CONSTITUTION:A first conductivity type diffraction grating layer 11 having a thickness less than 100Angstrom is built up on a second conductivity type GaAs regrowth boundary layer 10 built up on a guide layer 4. After the first crystal growth of the diffraction grating layer 11, it is selectively etched by photolithography. The respective ridges of the diffraction grating 5 are isolated from each other by the GaAs layer 10. A current injected from an electrode 8a or an electrode 8b does not flow through regions where the parts of the diffraction grating layer 11 remain but flows through regions where the regrowth layer 10 directly touches a cladding layer 6. The same phenomenon also occurs in an active layer 3. With this constitution, a high performance AlGaAs layer whose reproducibility is high can be obtained.
申请人:MITSUBISHI ELECTRIC CORP
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