赛米控丹佛斯 SEMITRANS IGBT模块 SKM100GAR17E4 数据表

®
2
IGBT4 Modules
SKM100GAR17E4
Features
•IGBT4 = 4. generation medium fast trench IGBT (Infineon)
•CAL4 = Soft switching 4. Generation CAL-Diode
•Insulated copper baseplate using DBC Technology (Direct Copper Bonding) •With integrated Gate resistor
•For switching frequenzies up to 8kHz •UL recognized, file no. E63532
Typical Applications*
•Electronic welders •DC/DC – converter •Brake chopper
•
Switched reluctance motor
Remarks
•Case temperature limited to T c = 125°C max.
•Recommended T op = -40 ... +150°C •Product reliability results valid for T j = 150°C
Absolute Maximum Ratings Symbol
Conditions Values Unit
IGBT V CES T j =25°C 1700V I C T j =175°C
T c =25°C 164A T c =80°C
127A I Cnom 100A I CRM
I CRM = 3xI Cnom 300A V GES -20...20V t psc V CC =1000V V GE ≤ 15V V CES ≤ 1700V
T j =150°C
10µs T j
-40...175°C Inverse diode I F T j =175°C
T c =25°C 113A T c =80°C 83A I Fnom
100
A I FRM I FRM = 2xI Fnom
200A I FSM t p =10ms, sin 180°, T j =25°C
650A T j
-40 (175)
°C Freewheeling diode I F T j =175°C
T c =25°C 113A T c =80°C
83A I Fnom 100
A I FRM I FRM = 2xI Fnom
200A I FSM t p =10ms, sin 180°, T j =25°C
650A T j -40...175°C Module I t(RMS)200A T stg -40 (125)
°C V isol
AC sinus 50 Hz, t =1min
4000
V
Characteristics Symbol
Conditions min.typ.max.Unit
IGBT V CE(sat)
I C =100A V GE =15V chiplevel T j =25°C 1.90 2.20V T j =150°C 2.30 2.60V V CE0chiplevel T j =25°C 0.80.9V T j =150°C 0.70.8V r CE V GE =15V chiplevel
T j =25°C 1113m ΩT j =150°C
1618m ΩV GE(th)V GE =V CE , I C =4mA 5.2
5.8
6.4V I CES V GE =0V V CE =1700V T j =25°C 1
mA T j =150°C mA C ies V CE =25V V GE =0V
f =1MHz 9nF C oes f =1MHz 0.34nF C res f =1MHz
0.29nF Q G V GE =- 8 V...+ 15 V 800nC R Gint
T j =25°C
7.5
Ω
t d(on)V
CC =1200V I C
=100A
V GE =+15/-15V R G on =2ΩR G off =2Ω
di/dt on =2540A/µs di/dt off =610A/µs du/dt =5430V/µs T j =150°C 234ns t r T j =150°C 39ns E on T j =150°C 43mJ t d(off)T j =150°C 657ns t f T j =150°C 136ns E off
T j =150°C
39
mJ
R th(j-c)per IGBT
0.234
K/W Inverse diode
V F = V EC I F =100A
V GE =0V chiplevel
T j =25°C 2.00 2.40V T j =150°C 2.15 2.57V V F0
chiplevel T j =25°C 1.32 1.56V T j =150°C 1.08 1.22V r F
chiplevel
T j =25°C 6.88.4m ΩT j =150°C 1114
m ΩI RRM I F =100A di/dt off =2360A/µs V GE =-15V
V CC =1200V
T j =150°C 86A Q rr T j
=150°C
34µC E rr T j =150°C 26
mJ R th(j-c)
per diode
0.504
K/W Freewheeling diode V F = V EC I F =100A
V GE =0V chiplevel
T j =25°C 2.00 2.40V T j =150°C 2.15 2.57V V F0
chiplevel T j =25°C 1.32 1.56V T j =150°C 1.08 1.22V r F chiplevel
T j =25°C 6.88.4m ΩT j =150°C
10.713.5m ΩI RRM I F =100A di/dt off =2360A/µs V GE =±15V
V CC =1200V
T j =150°C 86A Q rr T j
=150°C
34µC E rr T j =150°C 26
mJ R th(j-c)per Diode
0.504
K/W Module L CE 30
nH R CC'+EE'terminal-chip T C =25°C 0.65m ΩT C =125°C
1.09m Ω
R th(c-s)per module 0.04
0.05K/W M s to heat sink M63
5Nm M t to terminals M5
2.5
5Nm Nm w
160
g
Characteristics Symbol
Conditions
min.typ.
max.Unit
® 2
IGBT4 Modules
SKM100GAR17E4
Features
•IGBT4 = 4. generation medium fast trench IGBT (Infineon)
•CAL4 = Soft switching 4. Generation CAL-Diode
•Insulated copper baseplate using DBC Technology (Direct Copper Bonding) •With integrated Gate resistor
•For switching frequenzies up to 8kHz •UL recognized, file no. E63532
Typical Applications*
•Electronic welders •DC/DC – converter •Brake chopper
•
Switched reluctance motor
Remarks
•Case temperature limited to T c = 125°C max.
•Recommended T op = -40 ... +150°C •Product reliability results valid for T j = 150°C
This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX
* The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our staff.。