ASYMMETRIC FOUR-TRANSISTOR SRAM CELL
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专利名称：ASYMMETRIC FOUR-TRANSISTOR SRAM CELL
发明人：SACHDEV, Manoj,SHARIFKHANI, Mohammad 申请号：CA2007000033
申请日：20070110
公开号：WO08/046179P1
公开日：
20080424
专利内容由知识产权出版社提供
摘要：An asymmetric Static Random Access Memory (SRAM) cell is provided. The SRAM cell comprises first and second storage nodes, drive transistors and access transistors. The first and second storage nodes are configured to store complementary voltages. The drive transistors are configured to selectively couple each of the first and second storage nodes to corresponding high and low voltage power supplies, and maintain a first logic state through a feedback loop. The access transistors are configured to selectively couple each of the first and second storage nodes to corresponding first and second bit-lines and maintain a second logic state through relative transistor leakage currents. A method for reading from and writing to the SRAM cell are also provided.
申请人：SACHDEV, Manoj,SHARIFKHANI, Mohammad
地址：CA,CA
国籍：CA,CA
代理机构：GOWLING LAFLEUR HERDERSON LLP
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