2N7002K-T1中文资料

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2N7002中文资料大全

2N7002中文资料大全
描述：
晶体管极性:N沟道
漏极电流, Id 最大值:280mA
电压, Vds 最大:60V
开态电阻, Rds(on):5ohm
电压 @ Rds测量:10V
电压, Vgs 最高:2.1V
功耗:0.2W
工作温度范围:-55to 150
封装类型:SOT-23
针脚数:3
SVHC(温度关注物质):Cobalt dichloride (18-Jun-2010) SMD标号:702
功率, Pd:0.2W
外宽:3.05mm
外部深度:2.5mm
外部长度/高度:1.12mm
封装类型:SOT-23
带子宽度:8mm
晶体管数:1
晶体管类型:MOSFET
温度 @ 电流测量:25°C
满功率温度:25°C
电压 Vgs @ Rds on 测量:10V
电压, Vds 典型值:60V
电流, Id 连续:0.115A
电流, Idm 脉冲:0.8A
表面安装器件:表面安装
通态电阻, Rds on @ Vgs = 10V:5ohm
通态电阻, Rds on @ Vgs = 4.5V:5.3ohm
阈值电压, Vgs th 典型值:2.1V
阈值电压, Vgs th 最高:2.5V
SVHC(高度关注物质)(附加):Bis (2-ethyl(hexyl)phthalate) (DEHP) (18-Jun-2010)。

电源控制芯片2N7002资料

FeaturesFree from secondary breakdown Low power drive requirement Ease of parallelingLow C ISS and fast switching speeds Excellent thermal stability Integral source-drain diodeHigh input impedance and high gainComplementary N- and P-Channel devicesApplicationsMotor controls Converters Ampliﬁers SwitchesPower supply circuitsDrivers (relays, hammers, solenoids, lamps,memories, displays, bipolar transistors, etc.)►►►►►►►►►►►►►►General DescriptionThe Supertex 2N7002 is an enhancement-mode (normally-off) transistor that utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors, and the high input impedance and positive temperature coefﬁcient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown.Supertex’s vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switchingspeeds are desired.Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is not implied. Continuous operation of the device at the absolute rating level may affect device reliability. Allvoltages are referenced to device ground.* Distance of 1.6mm from case for 10 seconds.Pin ConﬁgurationN-Channel Enhancement-Mode Vertical DMOS FETs-G indicates package is RoHS compliant (‘Green’)Product MarkingW = Code for week sealed = “Green” Packaging DRAINSOURCEGATETO-236AB (SOT-23)TO-236AB (SOT-23)All D.C. parameters 100% tested at 25O C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)All A.C. parameters sample tested.1.2.Switching Waveforms and Test CircuitNotes:† ID(continuous) is limited by max rated Tj.OUTPUT INPUTOUTPUT10VV DD0V0VTypical Performance CurvesOutput Characteristics2.01.61.20.80.4I D )s e r e p m a ( Saturation Characteristics0.11001011.00.10.010.001V DS (volts)I D )s e r e p m a (0.001100.010.1 1.0t p (seconds)0.50.40.30.20.10G S F )s n e m e i s (4V 3V7V 9V8V6V 5VTypical Performance Curves (cont.)Q G (nanocoulombs))N O (S D R )d e z i l a m r o n (On-Resistance vs. Drain CurrentV B S S D )d e z i l a m r o n (I D )s e r e p m a ( )s d a r a f o c i p ( C V DS (volts)BV DSS Variation with Temperature102030400.20.40.60.8 1.02.01.61.20.80.4Supertex inc. does not recommend the use of its products in life support applications, and will not knowingly sell them for use in such applications unless it receives an adequate “product liability indemnification insurance agreement.” Supertex inc. does not assume responsibility for use of devices described, and limits its liability to the replacement of the devices determined defective due to workmanship. No responsibility is assumed for possible omissions and inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications refer to the Supertex inc. website: http//.©2008 All rights reserved. Unauthorized use or reproduction is prohibited.1235 Bordeaux Drive, Sunnyvale, CA 94089(The package drawing(s) in this data sheet may not reﬂect the most current speciﬁcations. For the latest package outline information go to /packaging.html .)3-Lead TO-236AB (SOT-23) Package Outline (K1)2.90x1.30mm body, 1.12mm height (max), 1.90mm pitchJEDEC Registration TO-236, Variation AB, Issue H, Jan. 1999.† This dimension is a non-JEDEC dimension.Drawings not to scale.Supertex Doc.#:DSPD-3TO236ABK1, Version B072208.View BView A - ATop View。

TSM2N7002中文资料

TSM2N700260V N-Channel Enhancement Mode MOSFETV DS = 60VR DS (on), Vgs @ 10V, Ids @ 500mA = 7.5ΩR DS (on), Vgs @ 5V, Ids @ 50mA = 13.5ΩFeaturesAdvanced trench process technologyHigh density cell design for low on-resistanceHigh input impedanceHigh speed switchingNo minority carrier storage timeCMOS logic compatible inputNosecondarybreakdownCompact and low profile SOT-23 packageBlock Diagram Ordering InformationPart No. Packing PackageTSM2N7002CX Tape&Reel SOT-23Absolute Maximum Rating (Ta = 25o C unless otherwise noted)Parameter SymbolLimitUnit Drain-Source Voltage V DS 60 VGate-Source Voltage V GS ±20 VContinuous Drain Current I D115 mAPulsed Drain Current I DM 800 mATa = 25 o C 225mWMaximum Power DissipationTa > 25 o CP D1.8 MW/ o COperating Junction Temperature T J +150 o COperating Junction and Storage Temperature Range T J, T STG- 55 to +150 o CThermal PerformanceParameter SymbolLimitUnit Lead Temperature (1/8” from case) T L 5 SJunction to Ambient Thermal Resistance (PCB mounted) Rθja 417 o C/WNote: Surface mounted on FR4 board t<=5sec.Pin assignment:1. Gate2. Source3. DrainElectrical CharacteristicsTj = 25 oC unless otherwise notedParameter Conditions Symbol Min Typ Max UnitStaticDrain-Source Breakdown Voltage V GS = 0V, I D = 10uA BV DSS 60 -- -- V Drain-Source On-State Resistance V GS = 10V, I D = 500mA R DS(ON) -- -- 7.5 Drain-Source On-State Resistance V GS = 5V, I D = 50mA R DS(ON) -- -- 13.5 Ω Gate Threshold Voltage V DS = V GS , I D = 250uA V GS(TH) 1.0-- 2.5 VZero Gate Voltage Drain Current V DS = 60V, V GS = 0V I DSS -- -- 1.0 uA Gate Body Leakage V GS = ± 20V, V DS = 0V I GSS -- -- ± 100 nA On-State Drain CurrentV DS 2V, V GS = 10VI D(ON) 500 -- -- mADynamicTurn-On Rise Time t r -- -- 20 Turn-Off Fall Time V DD = 25V, R L = 50Ω, I D = 500mA, V GEN = 10V, R G = 25Ωt f -- -- 40 nSInput Capacitance C iss -- 50 -- Output CapacitanceC oss -- 25 -- Reverse Transfer CapacitanceV DS = 25V, V GS = 0V, f = 1.0MHzC rss -- 5 --pF Source-Drain DiodeMax. Diode Forward CurrentI S -- -- 115 mA Diode Forward VoltageI S = 115mA, V GS = 0VV SD -- 1.3 1.5 VNote : pulse test: pulse width <=300uS, duty cycle <=2%。

2N7000中文资料

.590
D
.010
.020
E
.130
.160
G
.010
.104
MM MIN 4.33 4.30 13.97 0.36 3.30 2.44
MAX 4.83 4.83 14.97 0.56 3.96 2.64
NOTE
Revision: 4

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2006/05/16
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2N7000
MCC TM
Micro Commercial Components
Revision: 4
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2N7000

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2N7002K,215;中文规格书,Datasheet资料

2N7002KTrenchMOS™ logic level FETRev. 01 — 20 October 2003Product dataM3D0881.Product proﬁle1.1DescriptionN-channel enhancement mode ﬁeld-effect transistor in a plastic package using TrenchMOS™ technology.1.2Features1.3Applications1.4Quick reference data2.Pinning informations Logic level compatible s Very fast switchings Subminiature surface mount package s Gate-source ESD protection diodes.s Relay drivers High speed line driver.s V DS ≤60V s I D ≤340mA s P tot ≤0.83Ws R DSon ≤3.9Ω.Table 1:Pinning - SOT23, simpliﬁed outline and symbolPin Description Simpliﬁed outlineSymbol1gate (g)SOT232source (s)3drain (d)MSB003Top view123gds03ab603.Ordering informationTable 2:Ordering informationType number PackageName Description Version2N7002K SOT23Plastic surface mounted package; 3 leads.SOT23 4.Limiting valuesTable 3:Limiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134).Symbol Parameter Conditions Min Max Unit V DS drain-source voltage (DC)25°C≤T j≤150°C-60VV DGR drain-gate voltage (DC)25°C≤T j≤150°C; R GS=20kΩ-60VV GS gate-source voltage (DC)-±15VI D drain current (DC)T sp=25°C; V GS=10V;Figure2and3-340mAT sp=100°C; V GS=10V;Figure2-215mA I DM peak drain current T sp=25°C; pulsed; t p≤10µs;Figure3-680mA P tot total power dissipation T sp=25°C;Figure1-0.83W T stg storage temperature−65+150°C T j junction temperature−65+150°C Source-drain diodeI S source (diode forward) current (DC)T sp=25°C-340mA I SM peak source (diode forward) current T sp=25°C; pulsed; t p≤10µs-680mA Electrostatic discharge voltageV esd electrostatic discharge voltage Human Body Model1; C=100pF; R=1.5kΩ-1kVFig 1.Normalized total power dissipation as afunction of solder point temperature.Fig 2.Normalized continuous drain current as afunction of solder point temperature.T sp =25°C; I DM is single pulse; V GS =10VFig 3.Safe operating area; continuous and peak drain currents as a function of drain-source voltage.03aa1704080120050100150200(%)T sp (°C)P der 03aa2504080120050100150200T sp (°C)I der (%)P der P totP tot 25C °()-----------------------100%×=I der I DI D 25C °()-------------------100%×=03an6610-210-11110102V DS (V)I D (A)DC100 ms10 msLimit R DSon = V DS / I D1 mst p = 10 µs100 µs5.Thermal characteristics5.1Transient thermal impedanceTable 4:Thermal characteristicsSymbol ParameterConditionsMin Typ Max Unit R th(j-sp)thermal resistance from junction to solder point Figure 4--150K/W R th(j-a)thermal resistance from junction to ambientminimum footprint;mounted on a printed-circuit board-350-K/WFig 4.Transient thermal impedance from junction to solder point as a function of pulse duration.03aa3911010210310-510-410-310-210-1110t p (s)Z th(j-sp)(K/W)single pulseδ = 0.50.20.10.050.02t pt p TPtTδ =6.CharacteristicsTable 5:CharacteristicsT j=25°C unless otherwise speciﬁed.Symbol Parameter Conditions Min Typ Max Unit Static characteristicsV(BR)DSS drain-source breakdown voltage I D=10µA; V GS=0VT j=25°C6075-VT j=−55°C55--VV(BR)GSS drain-source breakdown voltage I G=±1mA; V DS=0V1622-VV GS(th)gate-source threshold voltage I D=1mA; V DS=V GS;Figure9VT j=25°C12-VT j=150°C0.6--VT j=−55°C-- 3.5VI DSS drain-source leakage current V DS=48V; V GS=0VT j=25°C-0.011µAT j=150°C--10µA I GSS gate-source leakage current V GS=±10V; V DS=0V-50500nA R DSon drain-source on-state resistance V GS=10V; I D=500mA;Figure7and8T j=25°C- 2.8 3.9ΩT j=150°C- 5.27.2ΩV GS=4.5V; I D=200mA;Figure7and8- 3.8 5.3ΩDynamic characteristicsC iss input capacitance V GS=0V; V DS=10V; f=1MHz;Figure11-1340pFC oss output capacitance-830pF C rss reverse transfer capacitance-410pFt on turn-on time V DD=50V; R L=250Ω;V GS=10V;R G=50Ω; R GS=50Ω-310nst off turn-off time-915ns Source-drain diodeV SD source-drain (diode forward) voltage I S=300mA; V GS=0V;Figure12-0.93 1.5Vt rr reverse recovery time I S=300mA; dI S/dt=−100A/µs;V GS=0V; V R=25V -30-nsQ r recovered charge-30-nCT j =25°C T j =25°C and 150°C; V DS >I D x R DSonFig 5.Output characteristics: drain current as afunction of drain-source voltage;typical values.Fig 6.Transfer characteristics: drain current as afunction of gate-source voltage; typical values.T j =25°CFig 7.Drain-source on-state resistance as a functionof drain current; typical values.Fig 8.Normalized drain-source on-state resistance factor as a function of junction temperature.03an7000.10.20.30.40.500.511.52V DS (V)I D (A) 3.5 VT j = 25 °CV GS = 10V4 V4.5 V3 V6 V03an7200.10.20.30.40.50246V GS (V)I D (A)V DS > I D x R DSonT j = 25 °C150 °C03an71024681000.10.20.30.40.5I D (A)R DSon (Ω)V GS = 3.5 VT j = 25 °C4.5 V4 V10 V6 V 03aa2800.61.21.82.4-6060120180a T j (°C)a RDSon R DSon 25C °()----------------------------=I D =1mA; V DS =V GS T j =25°C; V DS =5VFig 9.Gate-source threshold voltage as a function ofjunction temperature.Fig 10.Sub-threshold drain current as a function ofgate-source voltage.V GS =0V; f =1MHzFig 11.Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values.03aa3400.61.21.82.4-6060120180T j (°C)V GS(th)(V)typmin03aa3710-610-510-410-310-210-100.61.21.82.4V GS (V)I D (A)typmin03aa4611010210-11 10102V DS (V)C (pF)C issC ossC rssT j =25°C and 150°C; V GS =0V I D =0.5A; V DD =48VFig 12.Source (diode forward) current as a function ofsource-drain (diode forward) voltage; typical values.Fig 13.Gate-source voltage as a function of gatecharge; typical values.03an7300.10.20.30.40.500.30.60.91.2V SD (V)I S (A)T j = 25 °C150 °CV GS = 0 V03ab090510150.30.60.91.2Q G (nC)V GS (V)I D = 0.5AV DD = 48 V T j = 25 °C7.Package outlineFig 14.SOT23.UNIT A 1max.b p c D E e 1H E L p Q w v REFERENCESOUTLINE VERSION EUROPEAN PROJECTIONISSUE DATE 97-02-2899-09-13IECJEDEC EIAJmm0.10.480.380.150.093.02.81.41.20.95e 1.92.52.10.550.450.10.2DIMENSIONS (mm are the original dimensions)0.450.15SOT23TO-236ABb pD e 1eAA 1L pQdetail XH EE w M v M ABAB 01 2 mmscaleA 1.10.9cX123Plastic surface mounted package; 3 leadsSOT238.Revision historyTable 6:Revision historyRev Date CPCN Description0120031020Product data (9397 750 11703)分销商库存信息: NXP2N7002K,215。

2N7002KT1G中文资料

2N7002KSmall Signal MOSFET60 V, 380 mA, Single, N−Channel, SOT−23 Features•ESD Protected•Low R DS(on)•Surface Mount Package•This is a Pb−Free DeviceApplications•Low Side Load Switch•Level Shift Circuits•DC−DC Converter•Portable Applications i.e. DSC, PDA, Cell Phone, etc. MAXIMUM RATINGS (T J = 25°C unless otherwise stated)Rating Symbol Value Unit Drain−to−Source Voltage V DSS60V Gate−to−Source Voltage V GS±20VDrain Current (Note 1)Steady State T A = 25°CT A = 85°Ct < 5 s T A = 25°CT A = 85°C I D320230380270mAPower Dissipation (Note 1) Steady Statet < 5 s P D300420mWPulsed Drain Current (t p = 10 m s)I DM 1.5AOperating Junction and Storage Temperature Range T J, T STG−55 to+150°CSource Current (Body Diode)I S300mALead Temperature for Soldering Purposes (1/8″ from case for 10 s)TL260°CGate−Source ESD Rating(HBM, Method 3015)ESD2000VStresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. THERMAL CHARACTERISTICSCharacteristic Symbol Max Unit Junction−to−Ambient − Steady State(Note1)R q JA417°C/W Junction−to−Ambient − t ≤ 5 s (Note 1)R q JA3001.Surface−mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 insq [1 oz] including traces)Device Package Shipping†ORDERING INFORMATION2N7002KT1G3000/T ape & ReelSimplified SchematicSOT−23CASE 318STYLE 21704 M GGMARKING DIAGRAM& PIN ASSIGNMENT321DrainGate SourceSOT−23(Pb−Free)60 V 1.6 W @ 10 VR DS(on) MAX380 mAI D MAX(Note 1)V(BR)DSS†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our T ape and Reel Packaging Specifications Brochure, BRD8011/D.2.5 W @ 4.5 VGateSourceDrain(Top View)704= Specific Device CodeM= Date CodeG= Pb−Free Package(Note: Microdot may be in either location) *Date Code orientation and/or position mayvary depending upon manufacturing location.ELECTRICAL CHARACTERISTICS (T J = 25°C unless otherwise specified)Parameter Symbol Test Condition Min Typ Max Units OFF CHARACTERISTICSDrain−to−Source Breakdown Voltage V(BR)DSS V GS = 0 V, I D = 250 m A60V Drain−to−Source Breakdown VoltageTemperature CoefficientV(BR)DSS/T J71mV/°CZero Gate Voltage Drain Current I DSS VGS = 0 V,V DS = 60 V T J = 25°C1m A T J = 125°C500V GS = 0 V,V DS = 50 VT J = 25°C100nA Gate−to−Source Leakage Current I GSS V DS = 0 V, V GS = ±20 V±10m AV DS = 0 V, V GS = ±10 V450nAV DS = 0 V, V GS = ±5.0 V150nA ON CHARACTERISTICS (Note 2)Gate Threshold Voltage V GS(TH)V GS = V DS, I D = 250 m A 1.0 2.5V Negative Threshold TemperatureCoefficientV GS(TH)/T J 4.0mV/°C Drain−to−Source On Resistance R DS(on)V GS = 10 V, I D = 500 mA 1.19 1.6WV GS = 4.5 V, I D = 200 mA 1.33 2.5Forward Transconductance g FS V DS = 5 V, I D = 200 mA80S CHARGES AND CAPACITANCESInput Capacitance C ISSV GS = 0 V, f = 1 MHz,V DS = 20 V 24.5pFOutput Capacitance C OSS 4.2 Reverse Transfer Capacitance C RSS 2.2Total Gate Charge Q G(TOT)V GS = 4.5 V, V DS = 10 V;I D = 200 mA 0.7nCThreshold Gate Charge Q G(TH)0.1 Gate−to−Source Charge Q GS0.3 Gate−to−Drain Charge Q GD0.1 SWITCHING CHARACTERISTICS, V GS = V (Note 3)Turn−On Delay Time t d(ON)V GS = 10 V, V DD = 25 V,I D = 500 mA, R G = 25 W 12.2nsRise Time t r9.0 Turn−Off Delay Time t d(OFF)55.8 Fall Time t f29 DRAIN−SOURCE DIODE CHARACTERISTICSForward Diode Voltage V SD VGS = 0 V,I S = 200 mA T J = 25°C0.8 1.2V T J = 85°C0.72.Pulse Test: pulse width ≤ 300 m s, duty cycle ≤ 2%3.Switching characteristics are independent of operating junction temperaturesFigure 1. On −Region CharacteristicsFigure 2. Transfer CharacteristicsV DS , DRAIN −TO −SOURCE VOLTAGE (V)V GS , GATE −TO −SOURCE VOLTAGE (V)Figure 3. On −Resistance vs. Drain Current andTemperatureFigure 4. On −Resistance vs. Drain Current andTemperatureI D , DRAIN CURRENT (A)Figure 5. On −Resistance vs. Gate −to −SourceVoltage Figure 6. On −Resistance Variation withTemperatureV GS , GATE −TO −SOURCE VOLTAGE (V)T J , JUNCTION TEMPERATURE (°C)I D , D R A I N C U R R E N T (A )I D , D R A I N C U R R E N T (A )R D S (o n ), D R A I N −T O −S O U R C E R E S I S T A N C E (W )R D S (o n ), D R A I N −T O −S O U R C E R E S I S T A N C E (W )R D S (o n ), D R A I N −T O −S O U R C E R E S I S T A N C E (N O R M A L I Z E D )I D , DRAIN CURRENT (A)R D S (o n ), D R A I N −T O −S O U R C E R E S I S T A N C E (W )Figure 7. Capacitance VariationFigure 8. Gate −to −Source andDrain −to −Source Voltage vs. Total ChargeQg, TOTAL GATE CHARGE (nC)Figure 9. Diode Forward Voltage vs. CurrentV SD , SOURCE −TO −DRAIN VOLTAGE (V)110V G S , G A T E −T O −S O U R C E V O L T A G E (V )I S , S O U R C E C U R R E N T (A )C , C A P A C I T A N C E (p F )GATE −TO −SOURCE OR DRAIN −TO −SOURCE VOLTAGE (V)0.1PACKAGE DIMENSIONSSOT −23 (TO −236)CASE 318−08ISSUE ANSTYLE 21:PIN 1.GATE2.SOURCE3.DRAINNOTES:1.DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.2.CONTROLLING DIMENSION: INCH.3.MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISHTHICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL.4.318−01 THRU −07 AND −09 OBSOLETE, NEW STANDARD 318−08.SOLDERING FOOTPRINTVIEW CDIM A MIN NOM MAX MINMILLIMETERS0.89 1.00 1.110.035INCHES A10.010.060.100.001b 0.370.440.500.015c 0.090.130.180.003D 2.80 2.90 3.040.110E 1.20 1.30 1.400.047e 1.78 1.90 2.040.070L 0.100.200.300.0040.0400.0440.0020.0040.0180.0200.0050.0070.1140.1200.0510.0550.0750.0810.0080.012NOM MAX L1 2.102.40 2.640.0830.0940.104H E0.350.540.690.0140.0210.029ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further noticeto any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.PUBLICATION ORDERING INFORMATION。

2N7002KT N-Channel MOSFET 产品说明书

Parameter
Symbol
Test Condition
STATIC PARAMETERS
Drain-source Breakdown Voltage
V (BR) DSS VGS = 0V, ID =250μA
GateThreshold Voltage (note 2) Zero Gate Voltage Drain Current
0.8
VGS=4V
0.4
VGS=3V
1.2
VDS=3V Pulsed
Transfer Characteristics
0.8
Ta=100℃
0.4
Ta=25℃
DRAIN CURRENT ID (A)
DRAIN CURRENT ID (A)
ON-RESISTANCE DS(ON) R ()
0.0
0
1
2
3
4
Parameter Drain-Source Voltage *DWH-Source Voltage Continuous Drain Current Pulsed Drain Current(note1) Power Dissipation Junction Temperature Storage Temperature Thermal Resistance from Junction to Ambient

0.9
5

40
pF
30
pF
10
pF
10
ns
15
ns
30
ns
30
nC
f21.5
f30
V
1.5
V
0.2

2N7002资料

1.Product profile1.1General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using Trench MOSFET technology.1.2Features and benefits⏹Suitable for logic level gate drive sources ⏹Very fast switching⏹Surface-mounted package ⏹Trench MOSFET technology1.3Applications⏹Logic level translators⏹High-speed line drivers1.4Quick reference data2.Pinning information2N700260 V, 300 mA N-channel Trench MOSFETRev. 7 — 8 September 2011Product data sheetTable 1.Quick reference dataSymbol ParameterConditions Min Typ Max Unit V DS drain-source voltage 25°C ≤T j ≤150°C--60V I D drain currentV GS =10V; T sp =25°C;see Figure 1; see Figure 3--300mA P tot total power dissipation T sp =25°C;see Figure 2--0.83W Static characteristicsR DSondrain-source on-state resistanceV GS =10V; I D =500mA; T j =25°C; see Figure 6; see Figure 8- 2.85ΩTable 2.Pinning information Pin Symbol Description Simplified outlineGraphic symbol1G gate SOT23 (TO-236AB)2S source 3Ddrain1233.Ordering information4.Marking[1]% = placeholder for manufacturing site code5.Limiting valuesTable 3.Ordering informationType numberPackage NameDescriptionVersion 2N7002TO-236ABplastic surface-mounted package; 3 leadsSOT23Table 4.Marking codesType numberMarking code [1]2N700212%Table 5.Limiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134).Symbol ParameterConditions Min Max Unit V DS drain-source voltage 25°C ≤T j ≤150°C-60V V DGR drain-gate voltage 25°C ≤T j ≤150°C; R GS =20k Ω-60V V GS gate-source voltage -3030V V GSM peak gate-source voltage pulsed; t p ≤50µs; δ=0.25-4040V I Ddrain currentV GS =10V; T sp =25°C;see Figure 1; see Figure 3-300mA V GS =10V; T sp =100°C; see Figure 1-190mA I DM peak drain current pulsed; t p ≤10µs; T sp =25°C;see Figure 3- 1.2A P tot total power dissipation T sp =25°C;see Figure 2-0.83W T j junction temperature -65150°C T stg storage temperature -65150°C Source-drain diodeI S source current T sp =25°C-300mA I SMpeak source currentpulsed; t p ≤10µs; T sp =25°C - 1.2A6.Thermal characteristicsTable 6.Thermal characteristicsSymbol Parameter ConditionsMin Typ Max Unit R th(j-a)thermal resistance from junction to ambientMounted on a printed-circuit board; minimum footprint ; vertical in still air--350K/WR th(j-sp)thermal resistance from junction to solder pointsee Figure 4--150K/W7.CharacteristicsTable 7.CharacteristicsSymbol Parameter Conditions Min Typ Max Unit Static characteristicsV(BR)DSS drain-sourcebreakdown voltage I D=10µA; V GS=0V; T j=25°C60--V I D=10µA; V GS=0V; T j=-55°C55--VV GSth gate-source thresholdvoltage I D=0.25mA;V DS=V GS; T j=25°C;see Figure 9; see Figure 1012 2.5VI D=0.25mA;V DS=V GS; T j=150°C;see Figure 9; see Figure 100.6--VI D=0.25mA;V DS=V GS; T j=-55°C;see Figure 9; see Figure 10-- 2.75VI DSS drain leakage current V DS=48V;V GS=0V; T j=25°C-0.011µAV DS=48V;V GS=0V; T j=150°C--10µA I GSS gate leakage current V GS=15V; V DS=0V; T j=25°C-10100nAV GS=-15V;V DS=0V; T j=25°C-10100nAR DSon drain-source on-stateresistance V GS=10V; I D=500mA; T j=25°C;see Figure 6; see Figure 8- 2.85ΩV GS=10V; I D=500mA; T j=150°C;see Figure 6; see Figure 8--9.25ΩV GS=4.5V;I D=75mA;T j=25°C;seeFigure 6; see Figure 8- 3.8 5.3ΩDynamic characteristicsC iss input capacitance V DS=10V;f=1MHz;V GS=0V;T j=25°C -3150pFC oss output capacitance- 6.830pF C rss reverse transfercapacitance- 3.510pFt on turn-on time V GS=10V; V DS=50V;R L=250Ω;R G(ext)=50Ω; R GS=50Ω- 2.510nst off turn-off time-1115ns Source-drain diodeV SD source-drain voltage I S=300mA;V GS=0V;T j=25°C;seeFigure 11-0.85 1.5VQ r recovered charge V GS=0V;I S=300mA;dI S/dt=-100A/µs -30-nCt rr reverse recovery time-30-ns8.Package outlinePlastic surface-mounted package; 3 leads SOT23Fig 13.Package outline SOT23 (TO-236AB)9.Soldering10.Revision historyTable 8.Revision historyDocument ID Release date Data sheet status Change notice Supersedes2N7002 v.720110908Product data sheet-2N7002 v.6 Modifications:•The format of this data sheet has been redesigned to comply with the new identity guidelinesof NXP Semiconductors.•Legal texts have been adapted to the new company name where appropriate.2N7002 v.620060428Product data sheet2N7002 v.52N7002 v.520051115Product data sheet2N7002 v.42N7002 v.420050426Product data sheet2N7002 v.32N7002 v.320000727Product specification HZG3362N7002 v.22N7002 v.219970617Product specification2N7002 v.12N7002 v.119901031Product specification--11.Legal information11.1Data sheet status[1]Please consult the most recently issued document before initiating or completing a design.[2]The term 'short data sheet' is explained in section "Definitions".[3]The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest productstatus information is available on the Internet at URL .11.2DefinitionsPreview — The document is a preview version only. The document is still subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information.Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information.Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail.Product specification — The information and data provided in a Product data sheet shall define the specification of the product as agreed between NXP Semiconductors and its customer, unless NXP Semiconductors and customer have explicitly agreed otherwise in writing. In no event however, shall an agreement be valid in which the NXP Semiconductors product is deemed to offer functions and qualities beyond those described in the Product data sheet.11.3DisclaimersLimited warranty and liability — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information.In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory.Notwithstanding any damages that customer might incur for any reason whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of NXP Semiconductors.Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof.Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk.Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding.Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification.Customers are responsible for the design and operation of their applications and products using NXP Semiconductors products, and NXP Semiconductors accepts no liability for any assistance with applications or customer product design. It is customer’s sole responsibility to determine whether the NXP Semiconductors product is suitable and fit for the customer’s applications and products planned, as well as for the planned application and use of customer’s third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products.NXP Semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer’s applications or products, or the application or use by customer’s third party customer(s). Customer is responsible for doing all necessary testing for the customer’s applications and products using NXP Semiconductors products in order to avoid a default of the applications and the products or of the application or use by customer’s third partycustomer(s). NXP does not accept any liability in this respect.Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device.Document status [1][2] Product status [3] DefinitionObjective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification.Product [short] data sheet Production This document contains the product specification.Terms and conditions of commercial sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at /profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. NXP Semiconductors hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of NXP Semiconductors products by customer.No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights.Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities.Non-automotive qualified products — Unless this data sheet expressly states that this specific NXP Semiconductors product is automotive qualified, the product is not suitable for automotive use. It is neither qualified nor tested in accordance with automotive testing or application requirements. NXP Semiconductors accepts no liability for inclusion and/or use ofnon-automotive qualified products in automotive equipment or applications.In the event that customer uses the product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without NXP Semiconductors’ warranty of the product for such automotive applications, use and specifications, and (b) whenever customer uses the product for automotive applications beyond NXP Semiconductors’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies NXP Semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond NXP Semiconductors’ standard warranty and NXP Semiconductors’ product specifications. 11.4TrademarksNotice: All referenced brands, product names, service names and trademarks are the property of their respective owners.Adelante, Bitport, Bitsound, CoolFlux, CoReUse, DESFire, EZ-HV, FabKey, GreenChip, HiPerSmart, HITAG, I²C-bus logo, ICODE, I-CODE, ITEC, Labelution, MIFARE, MIFARE Plus, MIFARE Ultralight, MoReUse, QLPAK, Silicon Tuner, SiliconMAX, SmartXA, STARplug, TOPFET, TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V.HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation.12.Contact informationFor more information, please visit: For sales office addresses, please send an email to: salesaddresses@13.Contents1Product profile. . . . . . . . . . . . . . . . . . . . . . . . . . .11.1General description . . . . . . . . . . . . . . . . . . . . . .11.2Features and benefits. . . . . . . . . . . . . . . . . . . . .11.3Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .11.4Quick reference data . . . . . . . . . . . . . . . . . . . . .12Pinning information. . . . . . . . . . . . . . . . . . . . . . .13Ordering information. . . . . . . . . . . . . . . . . . . . . .24Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .25Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .26Thermal characteristics . . . . . . . . . . . . . . . . . . .47Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . .58Package outline. . . . . . . . . . . . . . . . . . . . . . . . . .89Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .910Revision history. . . . . . . . . . . . . . . . . . . . . . . . .1011Legal information. . . . . . . . . . . . . . . . . . . . . . . .1111.1Data sheet status . . . . . . . . . . . . . . . . . . . . . . .1111.2Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . .1111.3Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . .1111.4Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . .1212Contact information. . . . . . . . . . . . . . . . . . . . . .12Please be aware that important notices concerning this document and the product(s)described herein, have been included in section ‘Legal information’.© NXP B.V.2011.All rights reserved.For more information, please visit: For sales office addresses, please send an email to: salesaddresses@。

2N7002V-TP;中文规格书,Datasheet资料

ID(ON) rDS(on)
Adc Ω ms
DIM A B C D G H K L M
INCHES MIN .006 .043 .061 .020 .035 .059 .022 .004 .004 .043 .067 .023 .011 .007 0.90 1.50 0.56 0.10 0.10 MAX .011 .049 .067 MIN 0.15 1.10 1.55
Revision: 1
/

2005/01/252N7002VFra bibliotekMCC
Marking: KAS
Revision: 1
/

2005/01/25
分销商库存信息:
MICRO-COMMERICAL-CO 2N7002V-TP
Symbol VDSS VDGR VGSS ID PD RθJA TJ TSTG Rating Drain-source Voltage Drain-Gate Voltage Gate-source Voltage Drain Current Total Power Dissipation Thermal Resistance Junction to Ambient Operating Junction Temperature Storage Temperature Rating 60 60 ±20 280 150 833 -55 to +150 -55 to +150 Unit V V V mA mW ℃/W ℃ ℃ Max --2.5 ±0.1 1 500 --3.0 2.0 --50 25 5 Units Vdc Vdc µAdc µAdc
MM MAX 0.30 1.25 1.70 0.50 1.10 1.70 0.60 0.30 0.18 NOTE

AP2N7002K中文资料

N-CHANNEL ENHANCEMENT MODE POWER MOSFET▼ Simple Drive Requirement BV DSS 60V ▼ Small Package Outline R DS(ON)2Ω▼ Surface Mount Device I D640mA▼ RoHS CompliantDescriptionAbsolute Maximum RatingsSymbol Units V DS V V GSV I D @T A =25℃mA I D @T A =70℃mA I DMmA P D @T A =25℃W W/℃T STG ℃T J℃Symbol Value Unit Rthj-aThermal Resistance Junction-ambient 3Max.90℃/WData and specifications subject to change without noticeThermal DataParameterStorage Temperature RangeTotal Power Dissipation 1.38-55 to 150Operating Junction Temperature Range-55 to 150Linear Derating Factor 0.01Continuous Drain Current 3, V GS @ 10V 500Pulsed Drain Current 1,2950Gate-Source Voltage±20Continuous Drain Current 3, V GS @ 10V 640ParameterRating Drain-Source Voltage 60Pb Free Plating Product200209062-1/4AP2N7002KDG SSOT-23Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device.The SOT-23 package is universally used for all commercial-industrial applications.Electrical Characteristics@T j =25o C(unless otherwise specified)Symbol ParameterTest ConditionsMin.Typ.Max.Units BV DSSDrain-Source Breakdown VoltageV GS =0V, I D =250uA60--V ΔB V DSS /ΔT jBreakdown Voltage Temperature Coefficient Reference to 25℃, I D =1mA-0.06-V/℃R DS(ON)Static Drain-Source On-ResistanceV GS =10V, I D =500mA --2ΩV GS =4.5V, I D =200mA --4ΩV GS(th)Gate Threshold Voltage V DS =V GS , I D =250uA 1- 2.5V g fs Forward TransconductanceV DS =10V, I D =600mA -600-mS I DSS Drain-Source Leakage Current (T j =25o C)V DS =60V, V GS =0V --10uA Drain-Source Leakage Current (T j =70o C)V DS =48V ,V GS =0V --100uA I GSS Gate-Source Leakage V GS =±20V --±30uA Q g Total Gate Charge 2I D =600mA -1 1.6nC Q gs Gate-Source Charge V DS =50V -0.5-nC Q gd Gate-Drain ("Miller") Charge V GS =4.5V -0.5-nC t d(on)Turn-on Delay Time 2V DS =30V -12-ns t r Rise TimeI D =600mA -10-ns t d(off)Turn-off Delay Time R G =3.3Ω,V GS =10V -56-ns t f Fall Time R D =52Ω-29-ns C iss Input Capacitance V GS =0V -3250pF C oss Output CapacitanceV DS =25V -8-pF C rssReverse Transfer Capacitancef=1.0MHz-6-pFSource-Drain DiodeSymbol ParameterTest ConditionsMin.Typ.Max.Units V SDForward On Voltage 2I S =1.2A, V GS =0V-- 1.2VNotes:1.Pulse width limited by Max. junction temperature.2.Pulse width <300us , duty cycle <2%.3.Surface mounted on 1 in 2 copper pad of FR4 board ; 270℃/W when mounted on min. copper pad.2/4AP2N7002KFig 1. Typical Output CharacteristicsFig 3. On-Resistance v.s. Gate VoltageFig 4. Normalized On-Resistancev.s. Junction TemperatureFig 5. Forward Characteristic ofReverse DiodeJunction TemperatureFig 7. Gate Charge Characteristics Fig 8. Typical Capacitance CharacteristicsFig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal ImpedanceFig 11. Transfer Characteristics Fig 12. Gate Charge WaveformAP2N7002K。

2N7002K-7;中文规格书,Datasheet资料

Product SummaryV (BR)DSSR DS(ON) max I D max T A = 25°C 60V2Ω @ V GS = 10V380mA 3Ω @ V GS = 5V310mAFeatures and Benefits• Low On-Resistance • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Lead, Halogen and Antimony Free, RoHS Compliant "Green"Device (Notes 1 and 2) • ESD Protected Up To 2kV • Qualified to AEC-Q101 Standards for High ReliabilityDescription and ApplicationsThis MOSFET has been designed to minimize the on-state resistance (R DS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. • Motor control • Power Management Functions • BacklightingMechanical Data• Case: SOT23• Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 • Moisture Sensitivity: Level 1 per J-STD-020 • Terminals: Finish ⎯ Matte Tin annealed over Alloy 42 leadframe. Solderable per MIL-STD-202, Method 208 • Weight: 0.008 grams (approximate)Ordering Information (Note 3)Part Number Qualification Case Packaging2N7002K-7 Commercial SOT23 3000/Tape & Reel 2N7002KQ-7 Automotive SOT23 3000/Tape & Reel2N7002K-13 Commercial SOT23 10000/Tape & Reel 2N7002KQ-13 Automotive SOT23 10000/Tape & ReelNotes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. No purposely added lead. Halogen and Antimony free. 2. Diodes Inc.’s “Green” policy can be found on our website at . 3. For packaging details, go to our website at .Marking InformationDate Code KeyYear 2006 2007 2008 2009 2010 2011 2012 2013 2014 2015 2016 2017 Code T U V WX Y Z A B C D EMonth Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov DecCode SOT23Top View ESD protected up to 2kV Top View Equivalent Circuit K = SAT (Shanghai Assembly/ Test site) C = CAT (Chengdu Assembly/ Test site) 7K= Product Type Marking Code YM = Date Code Marking Y = Year (ex: N = 2002) M = Month (ex: 9 = September) Chengdu A/T Site Shanghai A/T Site C7K Y MK7KY MMaximum Ratings @T A = 25°C unless otherwise specifiedCharacteristic Symbol Value UnitsDrain-Source Voltage V DSS60 V Gate-Source Voltage V GSS±20 V Continuous Drain Current (Note 5) V GS = 10VSteady State T A = 25°C T A = 70°CI D380300 mA t<5s T A = 25°C T A = 70°CI D430340 mA Continuous Drain Current (Note 5) V GS = 5VSteady State T A = 25°C T A = 70°CI D310240 mA t<5s T A = 25°C T A = 70°CI D350270 mA Maximum Continuous Body Diode Forward Current (Note 5) I S0.5 A Pulsed Drain Current (10μs pulse, duty cycle = 1%) (Note 5) I DM1.2 AThermal Characteristics @T A = 25°C unless otherwise specifiedCharacteristic Symbol Value UnitsTotal Power Dissipation (Note 4) P D370 mW Thermal Resistance, Junction to Ambient (Note 4) Steady State R θJA357°C/W t<5s 292Total Power Dissipation (Note 5) P D540 mW Thermal Resistance, Junction to Ambient (Note 5) Steady StateR θJA240 °C/Wt<5s 197 Thermal Resistance, Junction to Case (Note 5) R θJC91 Operating and Storage Temperature Range T J, T STG-55 to 150 °CElectrical Characteristics @T A = 25°C unless otherwise specifiedCharacteristic Symbol Min Typ Max Unit Test ConditionOFF CHARACTERISTICS (Note 6) Drain-Source Breakdown Voltage BV DSS 60 ⎯ ⎯ V V GS = 0V, I D = 10μA Zero Gate Voltage Drain Current I DSS ⎯ ⎯ 1.0 μA V DS = 60V, V GS = 0V Gate-Source Leakage I GSS ⎯ ⎯ ±10 μA V GS = ±20V, V DS = 0V ON CHARACTERISTICS (Note 6) Gate Threshold Voltage V GS(th) 1.0 1.6 2.5 V V DS = 10V, I D = 1mAStatic Drain-Source On-Resistance R DS (ON)⎯ ⎯⎯ 2.0 3.0 Ω V GS = 10V, I D = 0.5A V GS = 5V, I D = 0.05AForward Transfer Admittance |Y fs | 80 ⎯ ⎯ ms V DS =10V, I D = 0.2A Diode Forward Voltage V SD ⎯ 0.75 1.1 V V GS = 0V, I S = 115mA DYNAMIC CHARACTERISTICS (Note 7) Input Capacitance C iss ⎯30 50 pF V DS = 25V, V GS = 0Vf = 1.0MHzOutput Capacitance C oss ⎯4.2 25 pF Reverse Transfer Capacitance C rss ⎯2.9 5.0 pF Gate Resistance R g⎯ 133 ⎯ m Ω f = 1MHz , V GS = 0V, V DS = 0V Total Gate Charge Q g⎯ 0.3 ⎯ nC V GS = 4.5V, V DS = 10V,I D = 250mAGate-Source Charge Q gs⎯ 0.2 ⎯ nC Gate-Drain Charge Q gd⎯ 0.08 ⎯ nC Turn-On Delay Time t D(on)⎯ 3.9 ⎯ ns V DD = 30V, V GS = 10V, R G = 25Ω, I D = 200mA Turn-On Rise Time t r⎯ 3.4 ⎯ ns Turn-Off Delay Time t D(off)⎯ 15.7 ⎯ ns Turn-Off Fall Time t f⎯ 9.9 ⎯ ns Notes:4. Device mounted on FR-4 PCB, with minimum recommended pad layout5. Device mounted on 1” x 1” FR-4 PCB with high coverage 2oz. Copper, single sided.6. Short duration pulse test used to minimize self-heating effect.7. Guaranteed by design. Not subject to product testing.V , DRAIN-SOURCE VOLTAGE (V)Fig. 1 Typical Output CharacteristicsDS I , D R A I N C U R R E N T (A )V , GATE-SOURCE VOLTAGE (V)Fig. 2 Typical Transfer CharacteristicsGS T , CHANNEL TEMPERATURE (°C)Fig. 3 Gate Threshold Voltage vs. Channel Temperaturech 00.51.52Fig. 4 Static Drain-Source On-Resistance vs. Drain Current DFig. 5 Static Drain-Source On-Resistance vs. Drain Current DV GATE SOURCE VOLTAGE (V)GS ,Fig. 6 Static Drain-Source On-Resistance vs. Gate-Source VoltageFig. 7 CH Static Drain-Source On-State Resistancevs. Channel T emperatureI , DRAIN CURRENT (A)D Fig.10 Forward Transfer Admittance vs. Drain Current|Y |, F O R W A R D T R A N S F E R A D M I T T A N C E (S )Fig. 11 Safe Operation AreaV , DRAIN-SOURCE VOLTAGE (V)DS I , D R A I N C U R R E N T (A )D t1, PULSE DURATION TIME (sec)Fig. 12 Single Pulse Maximum Power DissipationP , P E A K T R A N S I E N T P O I W E R (W )(P K )t1, PULSE DURATION TIME (sec)Fig. 13 Transient Thermal Resistancer (t ), T R A N S I E N T T H E R M A L R E S I S T A N C EPackage Outline Dimensions Suggested Pad LayoutSOT23Dim Min Max Typ A 0.37 0.51 0.40 B 1.20 1.40 1.30 C 2.30 2.50 2.40 D 0.89 1.03 0.915 F 0.45 0.60 0.535 G 1.78 2.05 1.83 H 2.80 3.00 2.90 J 0.0130.10 0.05 K 0.903 1.10 1.00 K1 - - 0.400 L 0.45 0.61 0.55 M 0.0850.18 0.11α0° 8°- All Dimensions in mmDimensions Value (in mm)Z2.9 X 0.8 Y 0.9 C 2.0 E 1.35X EYCZIMPORTANT NOTICEDIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages.Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks.LIFE SUPPORTDiodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:A. Life support devices or systems are devices or systems which:1. are intended to implant into the body, or2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in thelabeling can be reasonably expected to result in significant injury to the user.B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause thefailure of the life support device or to affect its safety or effectiveness.Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.Copyright © 2012, Diodes Incorporated分销商库存信息: DIODES2N7002K-7。

2N7002中文资料_数据手册_参数

件编号：71333 S09-0857-REV. E，2009年5月18日 VISHAY SILICONIX 2N7002K典型征 25°C，除非另有说明源极 - 漏极二极管正向电压温度阈值电压方差 1.2 1.5 1 100 1000 0.0 0.3 0.6 0.9 T J = 125℃ V SD - 源极至漏极电压（V） 10 T J = - 55℃ V GS = 0V T J = 25℃ - 0.8 - 0.6 - 0.4 - 0.2 0.0 0.2 0.4 - 50 - 25 0 25 50 75 100 125 150 I D = 250μA T J - 结温（°C）导通电阻与栅源电压的关系单脉冲功率，结到环境 0 1 2 3 4五 02468 10 V GS - 栅极 - 源极电压（V）我 D = 500毫安我 D = 200毫安 0.01 0 1 2.5 3 100 600 0.1时间（S） 1.5 2 0.5 1 10 T A = 25℃归一化热暂态阻抗，结到环境 10 10 -3 10 -2 1 10 600 10 -1 -4 100 2 1 0.1 0.01 0.2 0.1 0.05 0.02单脉冲占空比= 0.5方波脉冲持续时间（S） 1.工作周期D = 2.每单位基数= R THJA = 350℃/ W 3. T JM - T A = P DM Z THJA（T） T 1 T 2 T 1 T 2笔记： 4.表面安装 P D
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2N7002BK,215;中文规格书,Datasheet资料

Tamb = 25 °C;
-
single pulse; tp ≤ 10 μs
Version SOT23
Max Unit
60
V
±20
V
350
mA
245
mA
1.2
A
2N7002BK
Product data sheet
/
All information provided in this document is subject to legal disclaimers.
2N7002BK
60 V, 350 mA N-channel Trench MOSFET
Rev. 1 — 17 June 2010
Product data sheet
1. Product profile
1.1 General description
N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
2N7002BK
Product data sheet
/
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 17 June 2010
© NXP B.V. 2010. All rights reserved.
Conditions
Min Typ Max Unit

2N7002中文资料(fairchild)中文数据手册「EasyDatasheet - 矽搜」

芯片中文手册,看全文,戳
1995年11月
2N7000 / 2N7002 / NDS7002A N沟道增强型场效应晶体管
概述
这些N沟道增强型场效应晶体管采用飞兆半导体专有,高密度生产, DMOS技术.这些产品目是为最大限度地减少通态电阻 ,同时提供坚固,可靠和快速开关性能.他们可以在需要高达400mA DC大多数应用中使用,并且可以提供脉冲电流高达2A.这些产品特别适用于低电压,低电流应用, 如小伺服电机控制,功率MOSFET栅极驱动器,和其他开关应用.
V 1 µA 1 mA 1 µA 0.5 mA 10 nA 100 nA
-10 nA -100 nA
V = V , I =1毫安
2N7000 0.8 2.1 3
V
V = V , I = 250 µA
2N7002 1 2.1 2.5 NDS7002A
= 10 V, I =500毫安
2N7000
1.2 5
T =125°C
1.9 9
V = 4.5 V, I =75毫安
1.8 5.3
V = 10 V, I =500毫安
2N7002
1.2 7.5
T =100°C
1.7 13.5
V = 5.0 V, I =50毫安
1.7 7.5
T =100C
2.4 13.5
V = 10 V, I =500毫安
NDS7002 A
V在
VGS
R GEN
G
V DD
RL
D
V出
DUT
S
图 11.
t d(on)
t on tr
90%
t d(of f )
t of f tf

2N7000中文资料

元器件交易网
2N7000
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features
· · · · · · Efficient High Density Cell Design Approaching 3 Million Cells per Square Inch Voltage Controlled Small Signal Switch Rugged High Saturation Current Low RDS (ON) Fast Switching Speed
D
BOTTOM VIEW
All Dimensions in mm
DG S
H
G
H
Maximum Ratings
Drain-Source Voltage
@ TA = 25°C unless otherwise specified Symbol VDSS VDGR VGSS Continuous Pulsed ID Pd TL RqJA Tj, TSTG Value 60 60 ±20 115 800 200 1.60 300 625 -55 to +150 Units V V V mA mW mW/°C °C K/W °C
DS11304 Rev. E-3
1 of 2
2N7000
元器件交易网
Electrical Characteristics @ TA = 25°C unless otherwise specified
Characteristics Drain-Source Breakdown Voltage Drain Cutoff Current Gate-Body Leakage Current Gate-Source Threshold Voltage Drain-Source On-Resistance Input Capacitance Output Capacitance Feedback Capacitance Turn-On Time Turn-Off Time Thermal Resistance, Junction to Ambient Symbol V(BR)DSS IDSS IGSS VGS(th) rDS(ON) CISS COSS CRSS ton toff RθJA Min 60 — — 0.8 — — — — — — — Typ — — — — — 60 25 5.0 10 10 — Max — 1.0 ±10 3.0 5.0 — — — — — 312.5 Unit V µA nA V W pF pF pF ns ns K/W Test Condition VGS = 0V, ID = 10µA VDS = 48V, VGS = 0V VGS = ±15V, VDS = 0V VDS = VGS, ID = 1.0mA VGS = 10V, ID = 0.5A

2N7002K中文资料

Notes a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2%. b. Guaranteed by design, not subject to production testing.
2
Document Number: 73307 S-50261Rev. A, 21-Feb-05
元器件交易网
SPICE Device Model 2N7002K Vishay Siliconix N-Channel 60-V (D-S) MOSFET
CHARACTERISTICS
• N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range • Model the Gate Charge, Transient, and Diode Reverse Recovery Characteristics
V A 1.1 1.6 550 0.87 Ω S V
Drain-Source On-State Resistancea Forward Transconductancea Diode Forward Voltagea
Dynamicb
Total Gate Charge Gate-Source Charge Gate-Drain Charge Qg Qgs Qgd VDS = 10 V, VGS = 4.5 V, ID = 250 mA 0.30 0.11 0.15 0.40 0.11 0.15 nC

2N7002K PDF规格书

1
0.1 0.001 0.01 0.1 1
0 0 2 4 6 8 10 12 14 16 18 20
I D , DRAIN CURRENT (A) Fig. 5 Static Drain-Source On-Resistance vs. Drain Current
V GS, GATE SOURCE VOLTAGE (V) Fig. 6 Static Drain-Source On-Resistance vs. Gate-Source Volta ge
D rai n
● ESD Protected 2KV HBM
+0.1 0.38 -0.1
0-0.1
Gate
Gate Protection Diode
Source
Absolute Maximum Ratings Ta=25
Parameter Drain-Source Voltage Gate-Source Voltage -Continuous Drain Current Power Dissipation -Continuous ( Note:1) -Pulsed (Note 1) Thermal Resistance.Junction- to-Ambient Junction Temperature Junction and Storage Temperature Range
Notes: 1. Device mounted on FR-4 PCB.
Symbol VDS VGS ID PD RthJA TJ Tstg
Rating 60 ±20 300 800 350 357 150 -55 to 150
Unit V mA mW ℃/W ℃
Electrical Characteristics Ta = 25

FX 2N7002K FOSAN富信科技MOS管规格书

ANHUI FOSAN SEMICONDUCTOR TECHNOLOGY CO.,LTD2N7002KSOT-23場效應晶體管(SOT-23Field Effect Transistors)N-Channel Enhancement-Mode MOS FET With ESDN 沟道增强型带静电保护MOS 场效应管■MAXIMUM RATINGS 最大額定值■THERMAL CHARACTERISTICS 熱特性Characteristic 特性參數Symbol 符號Max 最大值Unit 單位Drain-Source Voltage 漏極-源極電壓BV DSS 60V Gate-Source Voltage 栅極-源極電壓V GS +20V Drain Current (continuous)漏極電流-連續I DR 300mA Drain Current (pulsed)漏極電流-脉冲I DRM500mAANHUI FOSAN SEMICONDUCTOR TECHNOLOGY CO.,LTD 2N7002K■ELECTRICAL CHARACTERISTICS電特性(T A=25℃unless otherwise noted如無特殊說明，溫度爲25℃)Characteristic 特性參數Symbol符號Min最小值Typ典型值Max最大值Unit單位Drain-Source Breakdown Voltage漏極-源極擊穿電壓(I D=250uA,V GS=0V)BV DSS60——VGate Threshold Voltage栅極開启電壓(I D=250uA,V GS=V DS)V GS(th) 1.0— 2.5VDrain-Source On Voltage漏極-源極導通電壓(I D=50mA,V GS=5V) (I D=500mA,V GS=10V)V DS(ON)——0.3753.75VDiode Forward Voltage Drop内附二極管正向壓降(I SD=200mA,V GS=0V)V SD—— 1.5VZero Gate Voltage Drain Current零栅壓漏極電流(V GS=0V,V DS=BV DSS)I DSS——1u AGate Body Leakage栅極漏電流(V GS=+10V,V DS=0V) (V GS=+20V,V DS=0V)I GSS——+1+10u AStatic Drain-Source On-State Resistance 静态漏源導通電阻(I D=500mA,V GS=10V) (I D=50mA,V GS=5V)R DS(ON)——2.83.2ΩESD Rating静电保护ESD2000V HBM1.FR-5=1.0×0.75×0.062in.2.Alumina=0.4×0.3×0.024in.99.5%alumina.3.Pulse Width<300μs;Duty Cycle<2.0%.ANHUI FOSAN SEMICONDUCTOR TECHNOLOGY CO.,LTD 2N7002K■DIMENSION外形封裝尺寸單位(UNIT)：mm。

FOSAN富信电子 MOS管 2N7002K-产品规格书

安徽富信半导体科技有限公司ANHUI FOSAN SEMICONDUCTOR TECHNOLOGY CO.,LTD.2N7002K SOT-2360V N Channel ESD Protection沟道带静电保护MOS Field Effect Transistor场效应管▉Absolute Maximum Ratings最大额定值Characteristic特性参数Symbol符号Rat额定值Unit单位Drain-Source V oltage漏极-源极电压BV DSS60V Gate-Source Voltage栅极-源极电压V GS+20V Drain Current(continuous)漏极电流-连续I D（at T A=25°C）340mA Drain Current(pulsed)漏极电流-脉冲I DM 1.5A Total Device Dissipation总耗散功率P D(at T A=25°C)350mW ESD Protected Up to人体模式静电保护范围ESD(HBM) 2.0kV Thermal Resistance Junction-Ambient热阻RΘJA357℃/W Junction/Storage Temperature结温/储存温度T J,T stg-55~150℃▉Device Marking产品字标2N7002K=72KANHUI FOSAN SEMICONDUCTOR TECHNOLOGY CO.,LTD.2N7002K ▉Electrical Characteristics电特性(T A=25℃unless otherwise noted如无特殊说明，温度为25℃)Characteristic 特性参数Symbol符号Min最小值Typ典型值Max最大值Unit单位Drain-Source Breakdown Voltage漏极-源极击穿电压(I D=250uA,V GS=0V)BV DSS60——VGate Threshold Voltage栅极开启电压(I D=250uA,V GS=V DS)V GS(th)1 1.4 2.5VZero Gate Voltage Drain Current零栅压漏极电流(V GS=0V,V DS=60V)I DSS——1u AGate Body Leakage栅极漏电流(V GS=+20V,V DS=0V)I GSS——+10uAStatic Drain-Source On-State Resistance 静态漏源导通电阻(I D=300mA,V GS=10V) (I D=200mA,V GS=4.5V)R DS(ON)— 1.31.42.53.0ΩDiode Forward Voltage Drop内附二极管正向压降(I SD=300mA,V GS=0V)V SD—— 1.2V Input Capacitance输入电容(V GS=0V,V DS=30V,f=1MHz)C ISS—21—pF Common Source Output Capacitance共源输出电容(V GS=0V,V DS=30V,f=1MHz)C OSS—3—pF Reverse Transfer Capacitance反馈电容(V GS=0V,V DS=30V,f=1MHz)C RSS—2—pF Total Gate Charge栅极电荷密度(V DS=30V,I D=300mA,V GS=10V)Q g— 1.6—nC Gate Source Charge栅源电荷密度(V DS=30V,I D=300mA,V GS=10V)Q gs—0.5—nC Gate Drain Charge栅漏电荷密度(V DS=30V,I D=300mA,V GS=10V)Q gd—0.3—nC Turn-ON Delay Time开启延迟时间(V DS=30V I D=300mA,R GEN=6Ω,V GS=10V)t d(on)—4—ns Turn-ON Rise Time开启上升时间(V DS=30V I D=300mA,R GEN=6Ω,V GS=10V)t r—16—ns Turn-OFF Delay Time关断延迟时间(V DS=30V I D=300mA,R GEN=6Ω,V GS=10V)t d(off)—20—ns Turn-OFF Fall Time关断下降时间(V DS=30V I D=300mA,R GEN=6Ω,V GS=10V)t f—80—nsANHUI FOSAN SEMICONDUCTOR TECHNOLOGY CO.,LTD.2N7002K ■Typical Characteristic Curve典型特性曲线Figure1:Output Characteristics Figure2:Transfer CharacteristicsFigure3:On-Resistance vs.Drain Current Figure4:Safe Operating AreaFigure5:Capacitance Characteristics Figure6:Gate-Charge Characteristics安徽富信半导体科技有限公司ANHUI FOSAN SEMICONDUCTOR TECHNOLOGY CO.,LTD.2N7002K▉Dimension外形封裝尺寸Symbol Dimensions In Millimeters Dimensions In Inches Min Max Min Max A 0.900 1.1500.0350.045A10.0000.1000.0000.004A20.900 1.0500.0350.041b 0.3000.5000.0120.020c 0.0800.1500.0030.006D 2.800 3.0000.1100.118E 1.200 1.4000.0500.055E1 2.2502.5500.0890.100e 0.950TYP0.037TYPe1 1.8002.0000.0710.079L 0.550REF0.022REFL10.3000.5000.0120.020θ0o8o 0o8o。