PZT3906中文资料

IC = −100 µA; VCE = −5 V; RS = 1 kΩ; − f = 10 Hz to 15.7 kHz
Switching times (between 10% and 90% levels); (see Fig.3)
ton
turn-on time
td
பைடு நூலகம்
delay time
tr
rise time
DEFINITIONS
Data sheet status
Objective specification Preliminary specification Product specification
This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications.
e1 HE Lp
Q
v
w
y
mm
1.8 0.10 0.80 3.1 0.32 6.7 1.5 0.01 0.60 2.9 0.22 6.3
3.7 3.3
4.6
2.3
7.3 6.7
1.1 0.7
0.95 0.85
0.2
0.1
0.1
OUTLINE
VERSION
IEC
SOT223
1999 Apr 14
REFERENCES
CONDITIONS open emitter open base open collector
Tamb ≤ 25 °C; note 1
MIN.
− − − − − − − −65 − −65
MAX.
−40 −40 −6 −100 −200 −100 1.05 +150 150 +150
UNIT
V V V mA mA mA W °C °C °C
Product specification
PZT3906
SOT223
D
B
E
A
X
c y
HE
b1
4
vM A
A1
1
2
3
e1
bp
e
wM B
Q A
Lp detail X
0
2
4 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT A
A1 bp b1
c
D
E
e
VBB
VCC
(probe) oscilloscope
450 Ω Vi
RB R2
R1
RC
Vo
(probe) oscilloscope
450 Ω
DUT
MGD624
Vi = −5 V; T = 500 µs; tp = 10 µs; tr = tf ≤ 3 ns. R1 = 56 Ω; R2 = 2.5 kΩ; RB = 3.9 kΩ; RC = 270 Ω. VBB = 1.9 V; VCC = −3 V. Oscilloscope input impedance Zi = 50 Ω.
CHARACTERISTICS Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
ICBO IEBO hFE
VCEsat VBEsat Cc Ce fT F
collector cut-off current emitter cut-off current DC current gain
toff
turn-off time
ts
storage time
tf
fall time
ICon = −10 mA; IBon = −1 mA;
−
IBoff = 1 mA
−
−
−
−
−
MAX. −50 −50
− − 300 − − −200 −200 −850 −950 4.5 10 − 4
65 35 35 300 225 75
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
UNIT nA nA
mV mV mV mV pF pF MHz dB
ns ns ns ns ns ns
1999 Apr 14
3
元器件交易网
Philips Semiconductors
PNP switching transistor
Product specification
JEDEC
EIAJ
5
EUROPEAN PROJECTION
ISSUE DATE
96-11-11 97-02-28
元器件交易网
Philips Semiconductors
PNP switching transistor
Product specification
PZT3906
−
IC = 0; VEB = −6 V
−
VCE = −1 V; (see Fig.2)
IC = −0.1 mA
60
IC = −1 mA
80
IC = −10 mA
100
IC = −50 mA
60
IC = −100 mA
30
IC = −10 mA; IB = −1 mA
−
IC = −50 mA; IB = −5 mA
DESCRIPTION
handbook, halfpage
4
2, 4 1
3
1
2
3
Top view
MAM288
Fig.1 Simplified outline (SOT223) and symbol.
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134).
元器件交易网
DISCRETE SEMICONDUCTORS
DATA SHEET
handbook, halfpage M3D087
PZT3906 PNP switching transistor
Product specification Supersedes data of 1997 May 27
Fig.3 Test circuit for switching times.
1999 Apr 14
4
元器件交易网
Philips Semiconductors
PNP switching transistor
PACKAGE OUTLINE Plastic surface mounted package; collector pad for good heat transfer; 4 leads
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
SYMBOL
PARAMETER
VCBO VCEO VEBO IC ICM IBM Ptot Tstg Tj Tamb
collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature