K6L0908U2A-TD10中文资料

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洗衣机新品培训材料(PPT 74页)

XQG60-A1088 6kg 白色金属
300 1900 850*595*440 1000 触摸按键
√ √ √ √ √ √ √ √ / √ √ √ 太极提升筋
海信薄控洗衣机系列卖点
二、变频洗衣，节能低碳，超净夜间洗，安享舒睡
海信采用优质变频技术，360°零缝隙精准调控电机运转及洗涤节奏，减少碳排放，绿色节能。同时，噪音值降至最低，比普通电机减少噪音30%，洗衣机噪音值仅为60分贝，衣物在悄然间洗净，尽可安然舒睡。
不必再为家中的小孩子或是宠物误进入洗衣机造成的危险而担心
充分洗净衣物上的化学物品残留，避免伤害您的皮肤
海信薄控洗衣机系列特性
智能自检
功能详解
阿波罗·薄控系列会像高级轿车一样，机器将自行检测运行过程中出现的非正常情况或误操作，并对故障作出诊断，同时提示报警
用户利益点解说
体验高端享受，免去您手动检测的烦恼
海信薄控洗衣机系列卖点
七、 Smart平衡系统，振动与噪音超过欧洲A级标准30%，洗涤位移小于0.1mm
平衡系统是衡量一台滚筒洗衣机的好坏的重要标准，也是一个企业技术实力的真实体现，薄控采用我们海信自主研发的SMART平衡系统，经过国家权威机构检测，洗涤过程中的整个位移小于 0.1mm，而且振动超过欧洲A级标准30%。 SMART平衡系统由六大模块组成：1、进口优质品牌电机；2、10公斤高承载能力轴承；3、静音减震系统；4、进口电脑板（优化转停比）；5、强力吊簧；6、配重块，以上6大模块，通过合理的空间布局以及系统调试，构成完美的SMART平衡系统。
海信薄控洗衣机系列卖点
十二、超大口径，去放自如
330mm超大直径取物口设计，方便取放大宗衣物，即使大件的夏被也能装得下、洗得净，舒适操作，轻松取衣。

智能门锁9000系列：全自动推拔门锁说明书

9000 seriesIntuitive push-pull useSystem wake-up by manualtouchAuto Locking FunctionDDL192LAFCB Only one step to lock or unlockFull auto, full smart lifeEverything starts here: The convenience brought by one-touch unlock and autolock; Solid security ensured by dual veriﬁcation and Bluetooth unlock; Sense ofsci&tech presented by ergonomic design and streamlined body.Easy life doesn't stop therePatented full auto mortise: Unlock and open at one goAuto locking: Enjoy the reassurance after you close the doorIntuitive ﬁngerprinting: Unlock swiftly at one goMultiple alarming: Protect home security at all timesMultiple protection in one for overall home safetyDual veriﬁcation unlocking: Security is never forgottenC grade lock cylinder: Better reliability and securityFake PIN code: Protect your password security in real timeOutside forced lock: Instant alarm upon inside unlockingSafe handle: Eliminates safety risks and keep you reassuredHighlightsPatented full auto mortiseThe upgraded full automatic mortise makes it possible for instant unlocking right after a successful veriﬁcation. Once you arerecognized, you can directly push or pull the handle to open the door, which greatlysimpliﬁes the use of your door lock and brings you a fast and convenient in and out experience.Auto locking functionThe push-pull smart door lock employs full automatic mortise. Without the need for any extra action, the deadbolt will spontaneously pop out after you close the door. If the door is not locked properly, the mortise will give an alarm to remind you of the door lock status.Intuitive ﬁngerprintingThe ﬁngerprint sensor is integrated in the push-pull handle so that when you hold the handle, your ﬁnger will naturally fall on the snesor. You can simply reach out andintuitively touch the sensor, then push to open after a successful ﬁngerprint veriﬁcation. Theone-step unlocking feature will deﬁnately bring you a fast and convenient door opening experience.Multiple alarming functionPhilips 9200 series is featured with all-around alarm functions which not only improves the anti-theft level of your home and safeguard you and your family in real time, but also reminds you of the door lock status to create convenience for use.Dual veriﬁcation unlockingIn dual veriﬁcation mode, you can use a combination of any two factors (ﬁngerprint,password and card) as the unlocking solution to ensure doubled security for your home.C grade lock cylinderLock cylinder is the key component that controls the opening of the lock and iscompared to the heart of a lock. C grade lock cylinder employs multiple antithefttechnologies with unique design of the pin tumbler and vane structure, and is able to give high performance on preventing technical lockpicking.Fake PIN codePhilips EasyKey comes with the feature ofFake PIN Code technology which allows you to enter random number combinations tosuccessfully get identiﬁed as long as there is consecutive input of the real password. This feature can eﬀectively prevent peeping and safeguard your real password.One-key outside forced lockBefore leaving home, you can touch theoutside forced lock key to enable the function so that opening the door from inside the room will trigger an alarm. This feature can eﬀectively warn you of security risks and upgrade the level of home security.Safe handle switchYou can enable the safe handle function before you leave home. After the door is locked, the indoor handle will be ﬁxed to ensure that nobody could open the door by pushing the indoor handle. This feature can eﬀectively prevents unlocking from indoor, thuseliminating security risks and improves anti-theft performance.SpeciﬁcationsAccess SolutionBluetoothCard/Key TagFingerprintMechanical KeyPassword/PIN CodeSmart Lock FunctionsAlarm Function: Anti-prying alarm, Outside forced lock alarmLocking Function: Electronic deadlock, System lockingMortise: Full auto mortiseSafety Function: Dual veriﬁcation, Fake PIN code, Outside forced lock function, Safe handle funtionEasy OperationIndicator: Door locks status prompt, Low battery prompt, Mute status prompt, Outside forced lock prompt, System locking prompt Voice Guide: Human voice guideDesign & AppearanceColor: Red copperEmergency Escape Design: Indoor fast opening mortise Ergonomic Design: Push-pull handle designHandle: Push-pull handleSurface Processing: ElectroplatingFingerprint Sensor: SemiconductorLock CapacityCard/Key Tag: Up to 100Master PIN Code: 1One-time PIN Code: 1ModeOperationg Mode: Auto mode, Manual modeSystem Setup Mode: Dual veriﬁcation mode,Normal modePower SpeciﬁcationBattery Type: Alkaline BatteriesEmergency Power Supply: 5V power bankMaximum Batteries Capacity: 8 batteriesPower Supply: 4 AA batteriesTime of Use: 10 months*Working Voltage: 4.5-6VInstallationDoor Opening Direction: Left inward opening,Left outward opening, Right inward opening,Right outward oepningDoor Thickness: 38-60 mm, 60-90 mm, 90-120 mm, Other range*Door Type: Antitheft door, Copper door,Wooden doorMulti-lock Point: NoAccessory PartsAccessorial Battery: 4 AA alkaline batteriesCertiﬁcateDrilling TemplateInstallation AccessoriesMechanical Key: 2 keysMortiseMounting PlateCleaning PadSmart Key Tag: 2 cardsUser ManualWarranty Card* May be less depending on the actual usage.* Please contact our service agents or authorized dealersfor other door range.© 2021 Koninklijke Philips N.V.All Rights reserved.Speciﬁcations are subject to change without notice. Trademarks are the property of Koninklijke Philips N.V. or their respective owners.Issue date 2021‑09‑30 Version: 3.1.112 NC: 8670 001 57582 EAN: 69 71318 50023 7。

Nsiway NNSS44335588 超低EMI、无需滤波器、5W+3W×2的2.1声道用户手

10.1
TQFN4×4-28 封装尺寸................................................................................................................... 18
10.2
SOP-28 封装尺寸............................................................................................................................ 19
7.3
NS4358 引脚功能描述 ..................................................................................................................... 9
7.4
芯片印章说明 ................................................................................................................................. 10
NS4358
超低EMI、无需滤波器、5W+3W×2的2.1声道+3D环绕立体声数字音频功放
NS4358 用户手册 V1.1
深圳市纳芯威科技有限公司 2011 年 10 月
Nsiway
1
日期
2011-3-11 2011-10-11
NS4358
超低EMI、无需滤波器、5W+3W×2的2.1声道+3D环绕立体声数字音频功放

BL0910 应用指南说明书

BL0910应用指南目录版本信息 (1)应用电路图：（1U10I模式） (1)电阻采样方式 (1)关于电参数转换 (3)关于有功功率防潜动阈值设置 (4)互感器采样方式 (5)寄存器设置 (7)关于电参数转换 (7)电网频率转换 (8)PCB设计注意事项 (8)BL0910是上海贝岭股份有限公司开发的一款内置时钟多路免校准电能计量芯片，最多可测量10相交流电能，适用于电动自行车充电桩、PDU、多回路电表等需要多路计量的场景。

BL0910集成了11路高精度Sigma-Delta ADC，可同时测量11路信号（电流或电压）。

BL0910能够测量电流、电压有效值、有功功率、有功电能量等参数，可输出快速电流有效值（用于漏电监控、过流保护等故障检测），以及温度检测，波形输出等功能，通过UART或高速SPI接口输出数据，应用电路图：（1U10I模式）电阻采样方式上海贝岭股份有限公司2 / 9V1.0 上海市宜山路810号************或173****5186注意：1）M1~M10缺省功能为过流报警输出，M2管脚可配置为校表脉冲输出（具体配置见MODE3寄存器说明）；2）SPI、UART接口的速率，通信协议的描述见“BL0910 datasheet v1.0.pdf”；3）BL0910在出厂时已做增益修正，如果要免校准，外围器件的精度保证在1%以内；4）Uart通信模式时，RX、TX管脚需要外接上拉电阻；寄存器设置采用1毫欧合金电阻进行采样时，电流通道采用16倍增益，电压通道采用1倍增益；0000=1倍；0001=2倍；0010=8倍；0011=16倍；（注意：输入通道的最大差分电压±0.6V指的是1倍增益，如果使用16倍增益，则输入通道的最大差分电压为±37.5mV）注意：需要先向0x9E（US_WRPROT)寄存器写入0x5555后，才能写入增益相关设置！关于电参数转换BL0910在定义产品时考虑到大部分用户厂家不是专业计量器具厂家，没有专业的校准设备，对电能计量精度要求也相对较低，只是提供用电参考信息，不作计费标准。

DM9000中文手册

(SA4~ 9：TXD0~2
，011)被选中
访问类型高电平
是访问数据端口；低电平是访问地址端口
字命令标志，默认低电平有效
当访问外部数据存储器是字或双字宽度时，被置位
100
INT
O
中断请求信号
高电平有效，极性能修改
37~53 56
SD31~16
I/O
双字模式，高 16 位数据引脚
注意：以上介质无关端口都内部自带 60K 欧姆的下拉电阻处理器接口引脚
1
IOR#
I
2
IOW#
I
3
AEN#
I
处理器读命令
低电平有效，极性能够被 EEPRO M 修改，详细请参考对 EE PROM 内容的描述
处理器写命令
低电平有效，同样能修改极性
芯片选择，低
4
IOWAIT
O
14
RST
外部介质无关接口发送时钟
外部介质无关接口发送数据低 4 位
输出
TXD[2: 0]决定内部存储空间基址：TXD [2: 0]) * 10H +
300H
54
MDIO
I/O
外部介质无
关接口串行
数据通信
57
MDC
O
外部介质无关串行数据通信口时钟，且与中断引脚有关
该引脚高电平时候，中断引脚低电平有效；否则高有效
0 0 16 位
0 1 32 位
108 位
11未定义
66
EECK
I
时钟信号
67
EECS
I/O
片选
也做 LE D 模式选择引脚

K9LAG08U0M芯片手册读后感(huyunqing)

K9XXG08UXM芯片介绍1.芯片基本特征：z voltage supply: 3V+-5%,即2.7~3.6Vz memory cell: 2bit/memory cell可知这是MLC结构的flashz I/O口是command address data时分复用的z具有hardware data protection 功能，在上电/断电瞬间不允许program和erasez command register操作，chip内含指令寄存器z data retention: 10years 这是由其构成的产品(如SSD)的最长使用时间，所以看到SSD的使用寿命为10年z封装方式： 48pin--PCB0/PIB0 52pin—ICB0/IIB02.芯片的结构以及容量参数z每块chip内含有的block数：8K(8192),z每个block内含有的page数: 128z每个page的容量为（2K+64）Byte，这是页编程的单位z每个block的容量为(256K+8K) Byte，这是块擦除的单位z每块chip的容量为(2G+64M) Byte(K9LAG0U0M型号)3.芯片操作的典型时间:注意：Read和program 操作都是针对page的，erase操作是针对block的；Program和erase都属于写操作范围，与read操作对应Page read operation：随机读时间(random read) tR：60us (data从flash memory到data register的时间)串行访问时间（serial access）tREA：30ns（data从data register输出到IO的时间，这个参数随着容量增加而增加）Page program operation：Program time tPROG(data从data register编程到memory cell的时间)：800usBlock erase time tBERS: 1.5ms4.芯片的引脚功能z IO0~IO7： program时作为command address data输入，read时command address 输入和data输出，芯片未选中时保持高阻状态zz CLE: command锁存使能，CLE高电平时，WE~的上升沿将command锁存入内部command registerz ALE：address锁存使能，ALE高电平时，WE~的上升沿将address锁存入内部address register，因address长度的不同所需地址周期也不同z RE~：使得在data register中的data输出，RE下降沿tREA时间后输出有效(这是serial access time)，并将自动增加内部page的column地址计数器(能够连续读取data)z WE~：WE上升沿时可以写入command address dataz WP~：写保护端，在上电/断电瞬间有效，有效时将禁止program/erase操作z R/B~：高时表明flash芯片准备好待操作，低时表明正在进行program/erase/ random read 操作；random read operation是data从memory cell到data register的这段操作，random write是data从data register到memory cell这一段操作；当data在memory cell和data register之间交换时(包括随机读和随机写)RB~出现低电平表z Vcc：powerz Vss：groundz NC：not connect5. 芯片操作时的寻址周期：z A0~A11: column address 访问范围2K(一个page)z A12~A31: row address 访问chip中的8K个block 及block中的128个page地址(13+7)z每个cycle传送8位address, column address和row address不能在同一个cycle里传送，不足的address位接低电平0z可知传送一个完整地址需要2个column寻址周期+3个row寻址周期，一共5个周期z Block erase只需要3个rom 寻址周期(为何不是2个？)z每个page的Spare 64Byte 的访问是column address的最后64（2048~2111）6. 指令执行所需周期数Block erase, page program, page read等指令需要2周期(但并不连续，一般是在第一个命令周期内发送寻址命令，第二个命令周期内发送数据传送命令)reset, status read等指令只需要一个周期7. flash芯片操作指令一览8.read flow、program flow、erase flow注意program flow, erase flow依靠R/B~ 和IO0来判断过程是否完成，read flow通过校验ECC来判断过程是否完成14.关于芯片的坏块z Flash芯片出厂时可能含有少量坏块(invalid block)z坏块数量会随使用时间的增加而增加z一个坏块不会影响其他好块，这与结构有关z三星公司保证每块flash芯片的第一个block是好块z三星公司保证坏块的最后一个page中没有FFh数据(address:2048)，这也是检测坏块的方法(在K9WBG08U0M芯片中块定义不同)15.flash芯片的interleave 操作Interleave操作允许同时操作一个chip中的两个die,以interleave page program为例：阶段A：die1进入编程阶段，R/B~1显示忙，此时可以继续向die2发送命令阶段B：die1和die2都进入编程阶段，R/B~1和R/B~2都显示忙阶段C：die1已经完成编程，die2仍在编程中阶段D：die1和die2都完成编程，R/B~显示空闲，可以再次进行interleave操作HYQ2009-3-27。

LC1K09008B7 TeSys K 联式开关产品数据手册说明书

LC1K09008B7i s c l a i me r : T h i s d o c u m e n t a t i o n i s n o t i n t e n d e d a s a s u b s t i t u t ef o r a n d i s n o t t o b e u s e d f o r d e t e r m i n i ng s u i t a b i l i t y o r r e l i a b i l i t y o f th e s e p r o d u c t s f o r s p e ci f i c u s e r a p p l i c a t i o n sProduct datasheetCharacteristicsLC1K09008B7TeSys K contactor - 4P (2 NO + 2 NC) - AC-1 <=440 V 20 A - 24 V AC coilMainRange of product TeSys K RangeTeSys Product or component type Contactor Product name TeSys K Device short name LC1K Device application Control Contactor applicationResistive loadComplementaryUtilisation category AC-1Poles description 4PPole contact composition 2 NO + 2 NC[Ue] rated operational voltage 690 V AC 50/60 Hz for power circuit[Ie] rated operational current 20 A (<= 50 °C) at <= 440 V AC AC-1 for power circuit 16 A (<= 70 °C) at 690 V AC AC-1 for power circuit Control circuit type AC 50/60 Hz Control circuit voltage24 V AC 50/60 Hz [Uimp] rated impulse withstand voltage 8 kV Overvoltage categoryIII[Ith] conventional free air thermal current20 A at <= 50 °C for power circuitIrms rated making capacity 110 A AC for power circuit conforming to NF C 63-110110 A AC for power circuit conforming to IEC 60947Rated breaking capacity110 A at 415 V conforming to IEC 60947110 A at 440 V conforming to IEC 6094780 A at 500 V conforming to IEC 60947110 A at 220...230 V conforming to IEC 60947110 A at 380...400 V conforming to IEC 6094770 A at 660...690 V conforming to IEC 60947[Icw] rated short-time withstand current90 A <= 50 °C 1 s power circuit85 A <= 50 °C 5 s power circuit80 A <= 50 °C 10 s power circuit60 A <= 50 °C 30 s power circuit45 A <= 50 °C 1 min power circuit40 A <= 50 °C 3 min power circuit20 A <= 50 °C >= 15 s power circuitAssociated fuse rating25 A gG at <= 440 V for power circuit25 A aM for power circuitAverage impedance 3 mOhm at 50 Hz - Ith 20 A for power circuit[Ui] rated insulation voltage600 V for power circuit conforming to CSA C22.2 No 14690 V for power circuit conforming to IEC 60947-4-1600 V for power circuit conforming to UL 508Inrush power in VA30 VA at 20 °CHold-in power consumption in VA 4.5 VA at 20 °CHeat dissipation 1.3 WControl circuit voltage limits0.2...0.75 Uc at <= 50 °C drop-out0.8...1.15 Uc at <= 50 °C operationalConnections - terminals Screw clamp terminals 1 cable(s) 1.5...4 mm² - cable stiffness: solidScrew clamp terminals 1 cable(s) 0.75...4 mm² - cable stiffness: flexible - without cable endScrew clamp terminals 1 cable(s) 0.34...2.5 mm² - cable stiffness: flexible - with cable endScrew clamp terminals 2 cable(s) 1.5...4 mm² - cable stiffness: solidScrew clamp terminals 2 cable(s) 0.75...4 mm² - cable stiffness: flexible - without cable endScrew clamp terminals 2 cable(s) 0.34...1.5 mm² - cable stiffness: flexible - with cable end Operating rate3600 cyc/hSignalling circuit frequency<= 400 HzMounting support PlateRailTightening torque 1.3 N.m - on screw clamp terminals - with screwdriver Philips No 21.3 N.m - on screw clamp terminals - with screwdriver flat Ø 6 mmOperating time10...20 ms coil de-energisation and NO opening5...15 ms coil energisation and NC opening10...20 ms coil energisation and NO closing15...25 ms coil de-energisation and NC closingSafety reliability level B10d = 1369863 cycles contactor with nominal load conforming to EN/ISO 13849-1B10d = 20000000 cycles contactor with mechanical load conforming to EN/ISO 13849-1 Mechanical durability10 McyclesElectrical durability0.18 Mcycles 20 A AC-1 at Ue <= 440 VMechanical robustness Shocks contactor closed, on X axis 10 Gn for 11 ms IEC 60068-2-27Shocks contactor closed, on Y axis 15 Gn for 11 ms IEC 60068-2-27Shocks contactor closed, on Z axis 15 Gn for 11 ms IEC 60068-2-27Shocks contactor opened, on X axis 6 Gn for 11 ms IEC 60068-2-27Shocks contactor opened, on Y axis 10 Gn for 11 ms IEC 60068-2-27Shocks contactor opened, on Z axis 10 Gn for 11 ms IEC 60068-2-27Vibrations contactor closed 4 Gn, 5...300 Hz IEC 60068-2-6Vibrations contactor opened 2 Gn, 5...300 Hz IEC 60068-2-6Height58 mmWidth45 mmDepth57 mmProduct weight0.18 kgEnvironmentStandards BS 5424IEC 60947NF C 63-110VDE 0660Product certifications ULCSAIP degree of protection IP2x conforming to VDE 0106Protective treatment TC conforming to IEC 60068TC conforming to DIN 50016Ambient air temperature for operation-25...50 °CAmbient air temperature for storage-50...80 °COperating altitude 2000 m without derating in temperature Flame retardanceV1 conforming to UL 94Requirement 2 conforming to NF F 16-101Requirement 2 conforming to NF F 16-102Offer SustainabilitySustainable offer status Green Premium productRoHS (date code: YYWW)Compliant - since 0633 - Schneider Electric declaration of conformity Schneider Electric declaration of conformity REAChReference not containing SVHC above the threshold Reference not containing SVHC above the threshold Product environmental profile AvailableProduct environmental Product end of life instructionsAvailableEnd of life manualContractual warrantyWarranty period18 monthsLC1K09008B7。

HP 1859m 2009m v f 2159m v 2309m v 说明书

用户指南1859m2009m/v/f2159m/v2309m/vHP 产品和服务的所有保修限于这些产品与服务所附带的明确保修声明。

本文的任何条款都不应视作构成保修声明的附加条款。

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Adobe 和 Acrobat 是 Adobe Systems Incorporated 的商标。

"ENERGY STAR"（能源之星）及 "ENERGY STAR" 徽标是美国环保署 (United States Environmental Protection Agency) 在美国的注册标志。

Bluetooth 是由其所有者拥有的商标，Hewlett-Packard Company 对 Bluetooth 的使用已经过许可。

HP 支持科技产品在法律允许范围内的使用，我们不认可、也不鼓励我们的产品被用于著作权法所不允许的目的。

本文档中的内容可随时更改，恕不另行通知。

符号约定下面介绍本文档中的符号使用约定。

注、注意事项和警告在本指南中，文本块可能带有图标。

这些文本块是注、注意事项和警告方面的内容，具体用法如下：警告：表示如果不按照指示操作可能会导致人身伤害，甚至死亡。

电子元器件参数（功率开关管）

电子元器件参数（功率开关管）DIY爱好者的福音，电子元件参数表管子型号最高耐压（V）最大电流（A）管内是否含有阻尼二极管20N 120CND 1200 20 有K25T120 1200 25 有G40N150D 1500 40 有5GL40N150D 1500 40 有G4PH50UD 1500 40 有GT40Q321 1300 40 有GT40T101 1000 40 无G40T101 1000 40 无GT40T301 1300 40 无ZQB35JA 1500 35 有G30P120N 1200 30 无GPQ25101 1000 25 有GT15J101 1000 15 无GT8Q191 1900 8 有GT50J101 1000 50 无GT50J102 1000 50 无GT50J301 1300 50 无GT60M104 1000 60 无GT60M301 1300 60 无GT75AN—12 1200 75 无15Q101 1000 15 有25Q101 1000 25 有80J101 1000 80 无JHT20T120 1000 80 有SKW25N120 1200 25 有FGA25N120ANTD 1200 25 有c5707参数：vcbo=80v ic=8a pc=15w2sc5706 5a、50v、15w 贴片家电维修 2007-7-27 10:06这个比较全。

感谢搂主提供维修王子 2008-1-27 14:11型号品牌封装最高耐压值(V) 最高通过电流(A) 内阻IRF1010E IR TO-220 60 84 12mΩIRF1404 IR TO-220 40 202 0.004ΩIRF1405 IR TO-220 55 169 5.3mΩIRF2807 IR TO-220 75 82 13mΩIRF3205 IR TO-220 55 110 8mΩIRF3710 IR TO-220 100 57 23mΩIRF4905 IR TO-220 55 74 0.02ΩIRF530N IR TO-220 100 17 90mΩIRF5305 IR TO-220 -55 -31 60mΩIRF540N IR TO-220 100 33 44mΩIRF630N IR TO-220 200 9.5 0.3ΩIRF640 IR TO-220 200 18 0.18ΩIRF640N IR TO-220 200 18 0.15ΩIRF730 IR TO-220 400 5.5 1ΩIRF740 IR TO-220 400 10 0.55ΩIRF830 IR TO-220 500 4.5 1.5ΩIRF840 IR TO-220 500 8 0.85ΩIRF9530N IR TO-220 100 14 0.2ΩIRF9540N IR TO-220 -100 -23 0.117ΩIRF9Z24NPBF IR TO-220 -55 -12 0.175ΩIRF9Z34N IR TO-220 55 19 0.1ΩIRFBE30 IR TO-220 800 4.1 3ΩIRFP150N IR TO-220 100 42 0.036ΩIRFP250N IR TO-247 200 30 0.075ΩIRFP260N IR TO-247 200 50 0.04ΩIRFP450 IR TO-247 500 14 0.4ΩIRFP460 IR TO-247 500 20 0.27ΩIRFZ24N IR TO-220 55 17 0.07ΩIRFZ34N IR TO-220 55 29 0.04ΩIRFZ44N IR TO-220 55 49 17.5mΩIRFZ44NPBF IR TO-220 55 49 17.5mΩIRFZ48N IR TO-220 55 64 14mΩIRLML6302TR IR Micro-3 -20 0.6ΩIRLML6402TR IR Micro-3 -20 0.065ΩFU9024(直插)参数 55V 11A P沟道11P06 60V 11.4A P沟道2N6667 PNP 60V8A65W2N6724 NPN 50V2A1WBUZ90 600V4.5A75W30D100B ----SPW20N60S5 ----BUP304 1000V35A310WGT25Q101 1200V25A200WCT80AM20 80A1000V1MBH60-090 60A900VIRF131 80V14A79WIRF733 350V4.5A74WIRF3205 55V110A200WIRFBC40 600V6.2A125WIRFD020 50V2.4A1WIRFD9123 60V0.8AMTW14N50E N沟500V14A180W0.2欧IXFH32N50Q N沟500V32A360W0.15欧IXFH58N20 200V58A300W40m欧RFP4N100 N沟 1000V4.3A150W STW8NA80 800V7.2A175W G40N60 ----SSS10N60A N沟 600V10AJ18 P沟 170V 5A 63WJ226 ----2SK1358 N沟 900V9A150W VN2222LM 60V0.26A1W5P2M 5A200V5P6M 5A600VSID90B 1A600VS4055R 55A400VS4055M 55A400VS6055R 55A600VS8055R 55A800VSC141D 6A400VCS45-12 48A1200VBCR12AM 12A400VBTA41-700 40A700VT2013 ----78N04 ----78N05 ----78N08 ----78N09 ----78N12 ----78N15 ----79N06 ----79N09 ----AN6610 1.2A20VLM320K-15 -15V1.5ALM340K-15 15V1.5ALM7815K 15V>1AW7909C -9V1.5ACA3420T ----LM236AH-5.0 5.0V(1MA)LM1086CT-33 ----LM2931FGA25N120 参数:1200V 25A 250W维修王子 2008-4-1 14:44显示器三极管速查手册显示器三极管速查手册（部分有误，仅供参考）品名极性管脚功能参数MPSA42 NPN 21E 电话视频放大300V0.5A0.625W MPSA92 PNP 21E 电话视频放大 300V0.5A0.625W MPS2222A NPN 21 高频放大75V0.6A0.625W300MHZ 9011 NPN EBC 高频放大50V30mA0.4W150MHz 9012 PNP 贴片低频放大 50V0.5A0.625W 9013 NPN EBC 低频放大 50V0.5A0.625W9013 NPN 贴片低频放大 50V0.5A0.625W 9014 NPN EBC 低噪放大50V0.1A0.4W150MHZ 9015 PNP EBC 低噪放大50V0.1A0.4W150MHZ 9018 NPN EBC 高频放大30V50MA0.4W1GHZ8050 NPN EBC 高频放大 40V1.5A1W100MHZ8550 PNP EBC 高频放大 40V1.5A1W100MHZ2N2222 NPN 4A 高频放大60V0.8A0.5W25/200NSβ=45 2N2222A NPN 小铁高频放大75V0.6A0.625W300MHZ 2N2369 NPN 4A 开关40V0.5A0.3W800MHZ 2N2907 NPN 4A 通用60V0.6A0.4W26/70NSβ=200 2N3055 NPN 12 功率放大100V15A115W2N3440 NPN 6 视放开关 450V1A1W15MHZ2N3773 NPN 12 音频功放开关160V16A150W COP 2N6609 2N3904 NPN 21E 通用60V0.2Aβ=100-4002N3906 PNP 21E 通用40V0.2Aβ=100-400 2N5401 PNP 21E 视频放大160V0.6A0.625W100MHZ 2N5551 NPN 21E 视频放大160V0.6A0.625W100MHZ 2N5685 NPN 12 音频功放开关60V50A300W2N6277 NPN 12 功放开关 180V50A250W2N6609 PNP 12 音频功放开关160V15A150W COP 2N3773 2N6678 NPN 12 音频功放开关650V15A175W15MHZ 2N6718 NPN 小铁音频功放开关 100V2A2W50MHZ 3DA87A NPN 6 视频放大 100V0.1A1W3DG6A NPN 6 通用 15V20mA0.1W100MHz3DG6B NPN 6 通用 20V20mA0.1W150MHz3DG6C NPN 6 通用 20V20mA0.1W250MHz3DG6D NPN 6 通用 30V20mA0.1W150MHz3DG12C NPN 7 通用 45V0.3A0.7W200MHz 3DK2B NPN 7 开关 30V30mA0.2W3DK4B NPN 7 开关 40V0.8A0.7W3DK7C NPN 7 开关 25V50mA0.3W 3DD15D NPN 12 电源开关300V5A50W3DD102C NPN 12 电源开关 300V5A50W3522V 5.2V稳压管录像机用A634 PNP 28E 音频功放开关40V2A10W A708 PNP 6 NF/S 80V0.7A0.8W A715C PNP 29 音频功放开关35V2.5A10W160MHZ A733 PNP 21 通用50V0.1A180MHZA741 PNP 4 S 20V0.1A <70/120nS A781 PNP 39B 开关20V0.2A <80/160NSA928 PNP ECB 通用 20V1A0.25WA933 PNP 21 Uni 50V0.1A140MHzA940 PNP 28 音频功放开关 150V1.5A25W4MHZ /C2073 A950 PNP 21 通用 30V0.8A0.6WA966 PNP 21 音频激励输出30V1.5A0.9W COP:C2236 A968 PNP 28 音频功放开关 160V1.5A25W100MHZ /C2238 A1009 PNP BCE 功放开关 350V2A15WA1012 PNP 28 音频功率放 60V5A25WA1013 PNP 21 视频放大 160V1A0.9WA1015 PNP 21 通用 60V0.15A0.4W8MHZA1020 PNP 21 音频开关 50V2A0.9W A1123 PNP 21 低噪放大150V0.05A0.75WA1162 PNP 21d 通用贴片 50V0.15A0.15WA1216 PNP BCE 功放开关 180V17A200W20MHZ /2922 A1220 PNP 29 音频功放开关120V1.5A20W150MHZ/C2690 A1265 PNP BCE 功放开关 140V10A100W30MHZ /C3182 A1295 PNP BCE 功放开关230V17A200W30MHZ /C3264 A1301 PNP BCE 功放开关160V10A100W30MHZ /C3280 A1302 PNP BCE 功放开关200V15A150W30MHZ /C3281 A1358 ? PNP 高频120V1A10W120MHZ A1444 PNP BCE 高速电源开关100V15A30W80MHZA1494 PNP BCE 功放开关200V17A200W20MHZ /C3858 A1516 PNP BCE 功放开关 180V12A130W25MHZA1668 PNP 28B 电源开关200V2A25W20MHZ A1785 PNP BCE 驱动 400V1A1W/120V1A0.9W140MH A1941 PNP BCE 功放开关 140V10A100WCOP:5198A1943 PNP BCE 功放开关230V15A150W /C5200 原A1988 PNP 30 功放开关B449 PNP 12 功放开关 50V3.5A22.5W 锗管B631K PNP 29 音频功放开关120V1A8W130MHZ /D600K B647 PNP 21 通用 120V1A0.9W140MHZ /D667 B649 PNP 29 视放180V1.5A1W /D669B669 PNP 28 达林顿功放 70V4A40WB673 PNP 28 达林顿功放 100V7A40WB675 PNP 28 达林顿功放 60V7A40W B688 PNP BCE 音频功放开关 120V8A80W /D718B734 PNP 39B 通用 60V1A1W /D774B744 PNP 21 通用 30V0.1A0.25W B772 PNP 29 音频功放开关40V3A10W B774 PNP 21 通用 30V0.1A0.25W B817 PNP 30 功放开关160V12A100W /D1047 B834 PNP 28 功放开关60V3A30W B937A PNP 功放开关 60V2A35 DRAL B1020 PNP 28 功放开关达林顿100V7A40Wβ=6000B1079 PNP 30 达林顿功放100V20A100Wβ=5000/D1559 B1185 PNP 28B 功放开关 60V3A25W 70MHZ /D1762 B1238 PNP ECB 功放开关80V0.7A1W 100MHZ B1240 PNP 39B 功放开关40V2A1W100HZB1243 PNP 39B 功放开关 40V3A1W70HZB1316 PNP 54B 驱动功放达林顿100V2A10Wβ=15000 B1317 PNP BCE 音频功放 180V15A150W COP1975B1335 PNP 28 音频功放低噪 80V4A30W 12MHZ B1375 PNP BCE 音频功放 60V3A2W9MHZB1400 PNP 28B 达林顿功放120V6A25W β=1000-20000 B1429 PNP BCE 功放开关 180V15A150WB1494 PNP BCE 达林顿功放120V25A120Wβ=2000-20000 C106 NPN EBC 音频功放开关 60V1.5A15WC380 NPN 21 高频放大 35V0.03A250MHZ C458 NPN 21 通用30V0.1A230MHzC536 NPN 21 通用 40V0.1A180MHZC752 NPN 21 通用 30V0.1A300MHzC815 NPN 21 通用 60V0.2A0.25WC828 NPN 21 通用45V0.05A0.25W C900 NPN 21 低噪放大30V0.03A100MHZ C943 NPN 4A 通用60V0.2A200MHZ C945 NPN 21 通用 50V0.1A0.5W250MHZC1008 NPN 6 通用 80V0.7A0.8W50MHZC1162 NPN 29 音频功放开关 35V1.5A10WC1213 NPN 39B 监视器专用 35V0.5A0.4WC1222 NPN 21 低噪放大 60V0.1A100MHZ C1494 ? NPN 40A发射36V6A PQ=40W/175MHZ C1507 NPN 28 视放300V0.2A15WC1674 NPN 21 HF/ZF 30V0.02A600MHzC1815 NPN 21 通用 60V0.15A0.4W8MHZC1855 NPN 21f HF/ZF 20V0.02A550MHz C1875 NPN 12 彩行1500V3.5A50W C1906 NPN 21 高频放大30V0.05A1000MHZ C1942 NPN 12 彩行1500V3A50W C1959 NPN 21 通用30V0.4A0.5W300MHz C1970 NPN 28 手机发射40V0.6A PQ=1.3W/175MHZ C1971 NPN 28A 手机发射35V2.0A PQ=7.0W/175MHZ C1972 NPN 28A 手机发射35V3.5A PQ=15W/175MHZ C2012 NPN 21 HF 30V0.03A200MHZ C2027 NPN 12 行管 1500V5A50WC2036C2068 NPN 28E 视频放大 300V0.05A1.5W80MHZC2073 NPN 28 功率放大 150V1.5A25W4MHZ /A940C2078 NPN 28 音频功放开关 80V3A10W150MHZ C2120 NPN 21 通用 30V0.8A0.6W C2228 NPN 21 视频放大 160V0.05A0.75WC2230 NPN 21 视频放大 200V0.1A0.8WC2233 NPN 28 音频功放开关 200V4A40WC2236 NPN 21 通用 30V1.5A0.9W /A966C2238 NPN 28 音频功放开关160V1.5A25W100MHZ /A968 C2320 NPN 21 通用 50V0.2A0.3W200MHZC2335 NPN 28 视频功放 500V7A40WC2373 NPN 28 功放 200V7.5A40W C2383 NPN 21 视频开关160V1A0.9W /A1015 C2443 NPN 大铁功放开关 600V50A400W C2481 NPN 29 音频功放开关 150V1.5A20WC2482 NPN 21 视频放大 300V0.1A0.9WC2500 NPN 21 通用 30V2A0.9W150MHZC2594 NPN 29 音频功放开关 40V5A10WC2611 NPN 29 视频放大 300V0.1A1.25WC2625 NPN 30 音频功放开关450V10A80W C2682 NPN 29 NF/Vid 180V0.1A8W C2688 NPN 29 视放管 300V0.2A10W80MHZ C2690 NPN 29 音频功放开关 120V1.2A20W150MHZ/A1220P C2751 NPN BCE 电源开关500V15A120Wβ=40C2837 NPN 30 音频功放开关 150V10A100WC2898 NPN 28 音频功放开关 500V8A50WC2922 NPN 43 音频功放开关180V17A200W50MHZ /A1216 C3026 NPN 12 开关管1700V5A50Wβ=20 C3030 NPN BCE 开关管达林顿900V7A80Wβ=15 C3039 NPN 28 电源开关500V7A50Wβ=40C3058 NPN 12 开关管600V30A200W β=15C3148 NPN 28 电源开关900V3A40Wβ=15C3150 NPN 28 电源开关900V3A50Wβ=15C3153 NPN 30 电源开关900V6A100Wβ=15 C3182 NPN 30 功放开关140V10A100Wβ=95/A1265 C3198 NPN 21 高频放大60V0.15A0.4W130MHZ C3262 NPN BCE 达林顿功放800V10A100WC3264 NPN BCE PA功放开关230V17A200Wβ=170/A1295 C3280 NPN 30 音频功放开关160V12A120Wβ=100C3281 NPN 30 音频功放开关200V15A150W30MHZβ=100 C3300 NPN 30 音频功放开关100V15A100W β=600 C3310 NPN 28C 电源开关500V5A40W β= 20C3320 NPN 28C 电源开关500V15A80W β= 15C3355 NPN 21F 高频放大 20V0.1A6500MHZC3358 NPN 40B 高频放大 20V0.1A7000MHZC3457 NPN BCE 电源开关1100V3A50Wβ=12C3460 NPN BCE 电源开关 1100V6A100Wβ=12C3466 NPN BCE 电源开关1200V8A120Wβ=10C3505 NPN 28B 电源开关900V6A80W β=20C3527 NPN BCE 电源开关500V15A100Wβ=13C3528 NPN BCE 电源开关500V20A150Wβ=13 C3595 NPN 29 射频30V0.5A1.2Wβ=90C3679 NPN BCE 电源开关 900V5A100W6MHZC3680 NPN BCE 电源开关900V7A120W6MHZ C3688 NPN BCE 彩行 1500V10A150WC3720 NPN BCE 彩行 1200V10A200WC3783 NPN BCE 高压高速开关 900V5A100W 黄河21"C3795 NPN BCE 高压高速开关 900V5A2W8MHzC3807 NPN BCE 低噪放大 30V2A1.2W260MHZC3858 NPN BCE 功放开关200V17A200W20MHZ /A1494 C3866 NPN BCE 高压高速开关 900V3A40W C3873 NPN BCE 高压高速开关500V12A75W30MHZ C3886 NPN BCE 开关,行管1400V8A50W8MHZ C3893 NPN 28B 行管1400V8A50W8MHZ C3907 NPN 28B 功放开关 180V12A130W30MHZC3953 NPN 29 视放 120V0.2A1.3W 4000MHZC3987 NPN 28 达林顿50V3A20W β=1000C3995 NPN BCE 行管 1500V12A180W 34寸C3997 NPN BCE 行管 1500V15A250WC3998 NPN BCE 行管 1500V25A250W C4024 NPN BCE 功放开关 100V10A35W 24MHZC4038 NPN BCE 门电路 50V0.1A0.3W180MHZC4059 NPN BCE 高速开关600V15A130W 0.5/2.2US C4106 NPN BCE 电源开关 500V7A50W20MHZ?C4111 NPN BCE 开关行管 1500V10A150WC4119 NPN BCE 微波炉开关 1500V15A250W C4231 NPN 50C 音频功放 800V2A30WC4237 NPN BCE 高压高速开关 1000V8A120W30MHZ C4242 NPN BCE 高压高速开关 450V7A40WC4288 NPN BCE 行管 1400V12A200W8MHZC4297 NPN BCE 电源开关 500V12A75W10MHZ C4429 NPNBCE 电源开关 1100V8A60WC4517 NPN BCE 音频功放 550V3A30W6MHZC4532 NPN BCE C4582 NPN 28b 电源开关600V15A75W20MHZ ON4673 NPN BCEON4873 NPN BCE C4706 NPN BCE 电源开关900V14A130W6MHzC4742 NPN 46 彩行 1500V6A50W(带阻尼) C4745 NPN 46 彩行 1500V6A50WC4747 NPN 46 彩行 1500V10A50W C4769 NPN BCE 微机行管1500V7A60W(带阻尼) C4913 NPN BCE 大屏视放管 2000V0.2A35W C4924 NPN BCE 音频功放800V10A70W C4927 NPN BCE 行管1500V8A50WC4927 NPN BCE SONY29"行管 1500V8A50W 原装C4941 NPN BCE 行管 1500V6A65W 500/380NS C4953 NPN BCE 500V2A25W C5020 NPN BCE 彩行 1000V7A100WC5068 NPN BCE 彩行 1500V10A50WC5086 NPN BCE 彩行 1500V10A50WC5088 NPN BCE 彩行 1500V10A50W C5129 NPN BCE 彩显行管1500V8A50W(带阻) C5132 NPN BCE 彩行1500V16A50W C5144 NPN BCE 大屏彩行 1700V20A200WC5148 NPN BCEC5149 NPN BCE 高速高频行管1500V8A50W(带阻) C5198 NPN BCE 功放开关 140V10A100WC5200 NPN BCE 功放开关230V15A150W /A1943 原C5207 NPN BCE 彩行 1500V10A50W 原C5243 NPN BCE 彩行 1700V15A200W 原C5244 NPN BCE 彩行 1700V15A200WC5249 NPN BCEC5250 NPN BCE 开关 1000V7A100W 原C5251 NPN BCE 彩行 1500V12A50W 原C5252 NPN BCE 彩行 1500V15A100W 原C5294 NPN BCEC5296 NPN BCE 开关管 25"--34"大屏彩显电源管C5297 NPN BCE 开关管 25"--34"大屏彩显电源管C5331 NPN BCE 大屏彩显行管 1500V15A180W C5423 NPN BCED40C NPN ECB 对讲机用40V0.5A40W75MHZ(达林顿) D325 NPN BCE 功放开关 50V3A25WD385 NPN 11 达林顿功放100V7A30W D400 NPN 21 通用25V1A0.75W D401 NPN 28 音频功放开关 200V2A20W D415 NPN 29 音频功放开关 120V0.8A5WD438 NPN 21 通用 500V1A0.75W100MHzD547 NPN 大铁功放开关 600V50A400WD560 NPN BCE 达林顿功放 150V5A30WD600K NPN 29 音频功放开关 120V1A8W130MHZ/B631KD637 NPN 39E 通用 60V0.1A150MHZ **** D667 NPN 21 视频放大 120V1A0.9W140MHZ/B647D669 NPN 29 视频放大 180V1.5A1W140MHZ/D669D718 NPN 30 音频功放开关120V8A80W /B668 D774 NPN 39B 通用 100V1A1W /B734D789 NPN 21 音频输出 100V1A0.9WD820 NPN 12 彩行 1500V5A50WD870 NPN 12 彩行 1500V5A50W RRRRD880 NPN 28 音频功放开关 60V3A10WD882 NPN 29 音频功放开关 40V3A30WD884 NPN 28 音频功放开关 330V7A40W D898 NPN 12 彩行1500V3A50WD951 NPN 12 彩行 1500V3A65WD965 NPN 21 音频 40V5A0.75WD966 NPN 21 音频 40V5A1WD985 NPN 29 功放 150V1.5A10WD986 NPN 29 功放 150V1.5A10W D1025 NPN 28 达林顿功放200V8A50W D1037 NPN BCE 音频功放开关 150V30A180W D1047 NPN 30 音频功放开关 160V12A100W /B817 D1071 NPN 28 功放300V6A40W DRA-L D1163A NPN 28 行偏转用350V7A40W60MHz D1175 NPN 12 行偏转用1500V5A100W β=15 原D1273 NPN 28 音频功放80V3A40W50MHZβ=1500 D1302 NPN 21 音频 25V0.5A0.5W200MHZD1397 NPN BCE 开关 1500V3.5A50W3MHzD1398 NPN BCE 开关 1500V5A50W3MHzD1403 NPN 28B 彩行 1500V6A120WD1403 NPN 28B 彩行 1500V6A120W 原D1415 NPN 28B 功放电源开关100V7A40Wβ=6000达林顿D1416 NPN 28B 功放电源开关80V7A40Wβ=6000(达林顿) D1426 NPN 28B 彩行1500V3.5A80Wβ=12 RRRRRD1427 NPN 28B 彩行1500V5A80Wβ=12 RRRRRD1428 NPN 28B 彩行1500V6A80Wβ=12 RRRR D1431 NPN 28B 彩行1500V5A80Wβ=20D1433 NPN 28B 彩行1500V7A80Wβ=20D1439 NPN BCE 彩行 1500V3A80Wβ=8D1541 NPN 28B 彩行1500V3A80Wβ=20D1545 NPN 28B 彩行1500V5A50Wβ=20D1547 NPN BCE 彩行1500V7A80Wβ=20D1554 NPN BCE 彩行1500V3.5A80Wβ=12D1555 NPN BCE 彩行1500V5A80Wβ=12D1556 NPN BCE 彩行1500V6A80Wβ=12D1559 NPN BCE 达林顿功放100V20A100Wβ=5000/B1079 D1590 NPN 28 达林顿功放150V8A25W β=15000 D1632 NPN 28B 彩行 1500V4A70WD1640 NPN 29 达林顿功放120V2A1.2W β=4000-40000D1651 NPN SP 彩行 1500V5A60W3MHZD1710 NPN BCE 彩行 1500V5A50W D1718 NPN 28C 音频功放 180V15A3.5W20MHZD1762 NPN BCE 音频功放开关60V3A25W90MHZ /B1185 D1843 NPN BCE 低噪放大 50V1A1WD1849 NPN 50A 彩行 1500V7A120WD1850 NPN 50A 彩行 1500V7A120W D1859 NPN 50A 音频80V0.7A1W120MHZD1863 NPN 50A 音频 120V1A1W100MHZD1877 NPN 30 彩行 1500V4A50W(带阻尼)D1879 NPN 30 彩行 1500V6A60W(带阻尼) D1887 NPN 30 彩行1500V10A70W D1930 NPN 21 达林顿达林顿100V2A1.2Wβ=1000 D1975 NPN 53A 音频功放180V15A150W COP:B1317 D1978 NPN 21 达林顿120V1.5A0.9Wβ=30000 D1980 NPN 61B 达林顿100V2A10Wβ=1000-10000 D1981 NPN ECB 达林顿 100V2A1W D1993 NPN 45B 音频低噪 55V0.1A0.4W D1994A NPN ECB 音频驱动 60V1A1W D1997 NPN 45B 激励管 40V3A1.5W100MHZ D2008 NPN ECB 音频功放 80V1A1.2W D2012 NPN BCE 音频功放 60V3A2W3MHZ D2136 NPN ECB 功放 80V1A1.2W D2155 NPN 53A 音频功放 180V15A150W D2256 NPN 46 达林顿功放120V25A125Wβ=2000-20000D2334 NPN 28B 彩行 1500V5A80WD2335 NPN BCE 彩行 1500V7A100WD2349 NPN BCE 大屏彩显行管D2374 NPN BCED2375 NPN BCED2388 NPN EBC 达林顿 90V3A1.2WD2445 NPN BCE 彩行 1500V12.5A120W D2498 NPN BCE 彩行 1500V6A50WD2588 NPN BCE 点火器用DK55 NPN BEC 开关 400V4A60WBC307 PNP 21a 通用 50V0.2A0.3WBC327 PNP CBE 低噪音频 50V0.8A0.625W COM BC337 BC337 NPN 21a 音频激励低噪 50V0.8A0.625W COM BC327 BC338 NPN 21a 通用激励50V0.8A0.6 BC546 NPN 21a 通用80V0.2A0.5W BC547 NPN CBE 通用 50V0.2A0.5W300MHZBD135 NPN 29 音频功放 45V1.5A12.5WBD136 PNP 29 音频功放 45V1.5A12.5WBD137 NPN 29 音频功放 60V1.5A12.5WBD138 PNP 29 音频功放 60V1.5A12.5WBD139 PNP 29 音频功放 80V1.5A12.5WBD237 NPN 29 音频功放 100V2A25WBD238 PNP 29 音频功放 100V2A25WBD243 NPN 28 音频功放 45V6A65WBD244 PNP 28 音频功放 45V6A65WBD681 NPN 29 达林顿功放 100V4A40WBD682 NPN 29 达林顿功放 100V4A40W BF458 NPN 29 视放250V0.1A10WBU208A NPN 12 彩行 1500V5A12.5W BU208D NPN 12 彩行1500V5A12.5W (带阻尼) BU323 NPN 28 达林顿功放450V10A125W BU406 NPN 28 行管 400V7A60WBU508A NPN 28 行管 1500V7.5A75WBU508A NPN 28 行管 1500V7.5A75W 原BU508D NPN 28 行管1500V7.5A75W (带阻尼) BU806 NPN 28 功放400V8A60W DAR-LBU932R NPN 12 功放 500V15A150W DAR-LBU941 NPN 12BU1508DX NPN 28 开关功放BU2506DX NPN 30 开关功放1500V7A50W /600NS BU2508AF NPN 30 开关功放700V8A125W /600NS BU2508AXNPN 30 开关功放 700V8A125W /600NSBU2508DF NPN 30 开关功放700V8A125W/600NS(带阻尼) BU2508DX NPN 30 开关功放1500V8A50W/600NS(带阻尼) BU2520AF NPN 30 开关功放 800V10A150W 1/500NS BU2520AX NPN 30 开关功放 1500V10A150W 1/500NS BU2520DF NPN 30 开关功放 800V10A150W1/500NS(带阻) BU2520DX NPN 30 开关功放1500V10A50W/600NS (带阻) BU2522AF NPN 30 开关功放1500V11A150W /350NS BU2522AX NPN 30 开关功放1500V11A150W /350NS BU2525AF NPN 30 开关功放1500V12A150W /350NS BU2525AX NPN 30 开关功放1500V12A150W /350NS BU2527AF NPN 30 开关功放1500V15A150W BU2532AW NPN 30 开关功放 1500V15A150W(大屏) BUH515 NPN BCE 行管 1500V10A80W BUH515D NPN BCE 行管1500V10A80W(带阻尼) BUS13A NPN 12 开关功放1000V15A175WBUS14A NPN 12 开关功放 1000V30A250WBUT11A NPN 28 开关功放 1000V5A100WBUT12A NPN 28 开关功放 450V10A125W BUV26 NPN 28 音频功放开关90V14A65W /250ns BUV28A NPN 28 音频功放开关225V10A65W /250ns BUV48A NPN 30 音频功放开关450V15A150WBUW13A NPN 30 功放开关 1000V15A150WBUX48 NPN 12 功放开关 850V15A125WBUX84 NPN 30 功放开关 800V2A40W BUX98A NPN 12 功放开关 400V30A210W5MHZDTA114 PNP 10K-10K 160V0.6A0.625W(带阻) DTC143 NPN 录像机用 4.7K-4.7KHPA100 NPN BCE 大屏彩显行管 21#HPA150 NPN BCE 大屏彩显行管 21# HSE830 PNP BCE 音频功放 80V115W1MHZHSE838 NPN BCE 音频功放80V115W1MHZ COP/MJ4502 MN650 NPN BCE 行管 1500V6A80W MJ802 NPN 12 音频功放开关90V30A200WMJ2955 PNP 12 音频功放开关 60V15A115WMJ3055 NPN 12 音频功放开关 60V15A115WMJ4502 PNP 12 音频功放开关90V30A200W COP/MJ802 MJ10012 NPN 12 达林顿 400V10A175WMJ10015 NPN 12 电源开关 400V50A200WMJ10016 NPN 12 电源开关 500V50A200WMJ10025 12 电源开关 850V20A250W MJ11032 NPN 12 电源开关120V50A300W DAR-L MJ11033 PNP 12 电源开关120V50A300W DAR-L MJ13333 NPN 12 电源开关 400V20A175W MJ15024 NPN 12 音频功放开关 400V16A250W4MHZ(原25.00)MJ15025 PNP 12 音频功放开关 400V16A250W4MHZ(原25.00)MJE271 PNP 29 达林顿MJE340 NPN 29 视放 300V0.5A20WMJE350 PNP 29 视放 300V0.5A20W MJE2955T PNP BCE 音频功放开关60V1075W2MHZ MJE3055T NPN BCE 音频功放开关70V1075W2MHZ MJE5822 PNP BCE 音频功放开关 500V8A MJE9730 NPN BCEMJE13003 NPN 29 功放开关 400V1.5A14WMJE13005 NPN 28 功放开关 400V4A60WMJE13007 NPN 28 功放开关 1500V2.5A60WSE800TIP31C NPN BCE 功放开关 100V3A40W3MHZTIP32C PNP BCE 功放开关 100V3A40W3MHZ TIP35C NPN 30 音频功放开关100V25A125W3MHZ TIP36C PNP 30 音频功放开关100V25A125W3MHZ TIP41C NPN 30 音频功放开关100V6A65W3MHZ TIP42C PNP 30 音频功放开关100V6A65W3MHZ TIP102 NPN 28 音频功放开关100V8A2W TIP105 28 音频功放开关TIP122 NPN 28 音频功放开关 100V8A65W DARL TIP127 PNP 28 音频功放开关 100V8A65W DARL TIP137 PNP 28 音频功放开关100V8A70W DARL TIP142 NPN 30 音频功放开关 100V10A125W DAR-L TIP142大NPN 30 音频功放开关100V10A125W DAR-L TIP147 PNP 30 音频功放开关100V10A125W DAR-L 0 TIP147大PNP 30 音频功放开关 100V10A125W DAR-L 0 TIP152 电梯用TL431 21 电压基准源UGN3120 SGO 霍尔开关UGN3144 SGO 霍尔开关60MIAL1 电磁/微波炉 1000V60A300WT30G40 NPN BCE 大功率开关管400V30A300W 5609 COML:56105610 COML:56099626 NPN21 通用维修王子 2008-4-21 22:092N6667 PNP 60V8A65W2N6724 NPN 50V2A1WBUZ90 600V4.5A75W30D100B ----SPW20N60S5 ----BUP304 1000V35A310WGT25Q101 1200V25A200WCT80AM20 80A1000V1MBH60-090 60A900VIRF131 80V14A79WIRF733 350V4.5A74WIRF3205 55V110A200WIRFBC40 600V6.2A125WIRFD020 50V2.4A1WIRFD9123 60V0.8AMTW14N50E N沟 500V14A180W0.2欧IXFH32N50Q N沟 500V32A360W0.15欧IXFH58N20 200V58A300W40m欧RFP4N100 N沟 1000V4.3A150WSTW8NA80 800V7.2A175WG40N60 ----SSS10N60A N沟 600V10A J18 P沟 170V 5A 63WJ112 40V>5MAJ226 ----2SK1358 N沟 900V9A150W VN2222LM 60V0.26A1W 5P2M 5A200V5P6M 5A600VSID90B 1A600VS4055R 55A400VS4055M 55A400VS6055R 55A600VS8055R 55A800VSC141D 6A400VCS45-12 48A1200VBCR12AM 12A400VBTA41-700 40A700VT2013 ----78N04 ----78N05 ----78N08 ----78N09 ----78N12 ----78N15 ----79N06 ----79N09 ----AN6610 1.2A20VLM320K-15 -15V1.5ALM340K-15 15V1.5ALM7815K 15V>1AW7909C -9V1.5ACA3420T ----LM138K 32V>5ALM236AH-5.0 5.0V(1MA)LM1086CT-33 ----LM2931维修王子 2008-4-21 22:102N6667 PNP 60V8A65W2N6724 NPN 50V2A1WBUZ90 600V4.5A75W30D100B ----SPW20N60S5 ----BUP304 1000V35A310WGT25Q101 1200V25A200WCT80AM20 80A1000V1MBH60-090 60A900VIRF131 80V14A79WIRF733 350V4.5A74WIRF3205 55V110A200WIRFBC40 600V6.2A125WIRFD020 50V2.4A1WIRFD9123 60V0.8AMTW14N50E N沟500V14A180W0.2欧IXFH32N50Q N沟500V32A360W0.15欧IXFH58N20 200V58A300W40m欧RFP4N100 N沟 1000V4.3A150W STW8NA80 800V7.2A175W G40N60 ----SSS10N60A N沟 600V10AJ18 P沟 170V 5A 63WJ112 40V>5MAJ226 ----2SK1358 N沟 900V9A150WVN2222LM 60V0.26A1W5P2M 5A200V5P6M 5A600VSID90B 1A600VS4055R 55A400VS4055M 55A400VS6055R 55A600V。

K9K2G08U0M-V中文资料

Document Title256M x 8 Bit / 128M x 16 Bit NAND Flash Memory Revision HistoryThe attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the rightto change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions about device. If you have any questions, please contact the SAMSUNG branch office near your office.Revision No0.00.10.20.30.40.50.60.70.8RemarkAdvanceHistory1. Initial issue1. I OL (R/B) of 1.8V device is changed.-min. Value: 7mA -->3mA -typ. Value: 8mA -->4mA1. 5th cycle of ID is changed : 40h --> 44h1. Add WSOP Package Dimensions.1. Add two-K9K2GXXU0M-YCB0/YIB0 Stacked Package 1. Min valid block of K9W4GXXU1M-YCB0/YIB0 is changed .- min. 4016 --> 40361. Each K9K2GXXX0M chip in the K9W4GXXU1M has Maximum 30invalid blocks.2. K9W4GXXU1M’s ID is changed (Before)(After)1. Add the Rp vs tr ,tf & Rp vs ibusy graph for 1.8V device (Page 36)2. Add the data protection Vcc guidence for 1.8V device - below about 1.1V. (Page 37)The min. Vcc value 1.8V devices is changed.K9K2GXXQ0M : Vcc 1.65V~1.95V --> 1.70V~1.95VDevice 2nd Cycle 3rd cycle 4th Cycle 5th Cycle K9W4G08U1M DCh C315h 4Ch K9W4G16U1M CChC355h4ChDevice 2nd Cycle 3rd cycle 4th Cycle 5th Cycle K9W4G08U1M DAh C115h 44h K9W4G16U1MCAhC155h44hDraft DateAug. 30.2001Nov. 5.2001Jan. 23. 2002May.29.2002Aug.13.2002Aug. 22.2002Nov. 07.2002Nov. 22.2002Mar. 6.2003Document Title256M x 8 Bit / 128M x 16 Bit NAND Flash MemoryRevision HistoryThe attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the rightto change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions about device. If you have any questions, please contact the SAMSUNG branch office near your office.Revision No0.91.01.11.21.31.4RemarkHistoryPb-free Package is added.K9K2G08U0M-FCB0,FIB0K9K2G08Q0M-PCB0,PIB0K9K2G08U0M-PCB0,PIB0K9K2G16U0M-PCB0,PIB0K9K2G16Q0M-PCB0,PIB0K9W4G08U1M-PCB0,PIB0,ECB0,EIB0K9W4G16U1M-PCB0,PIB0,ECB0,EIB0Errata is added.(Front Page)-K9K2GXXQ0MtWC tWP tWH tRC tREH tRP tREA tCEA Specification 45 25 15 50 15 25 30 45Relaxed value 80 60 20 80 20 60 60 751. The 3rd Byte ID after 90h ID read command is don’t cared. The 5th Byte ID after 90h ID read command is deleted.New package dimension is added.(K9W4GXXU1M-KXB0/EXB0)1. Min valid block of K9W4GXXU1M-YCB0/YIB0 is changed .- min. 4036 --> 40162. Note is added.(VIL can undershoot to -0.4V and VIH can overshoot to VCC +0.4V for durations of 20 ns or less.)AC parameters are changed-K9K2GXXQ0MtWC tWP tWH tRC tREH tRP tREA tCEA Before 45 25 15 50 15 25 30 45After 80 60 20 80 20 60 60 75Draft DateMar. 13.2003Mar. 17.2003Apr. 9. 2003Apr. 15. 2003Apr. 18. 2003Aug. 5. 2003GENERAL DESCRIPTIONFEATURES• Voltage Supply-1.8V device(K9K2GXXQ0M): 1.7V~1.95V -3.3V device(K9XXGXXUXM): 2.7 V ~3.6 V • Organization- Memory Cell Array-X8 device(K9K2G08X0M) : (256M + 8,192K)bit x 8bit -X16 device(K9K2G16X0M) : (128M + 4,096K)bit x 16bit - Data Register-X8 device(K9K2G08X0M): (2K + 64)bit x8bit -X16 device(K9K2G16X0M): (1K + 32)bit x16bit - Cache Register-X8 device(K9K2G08X0M): (2K + 64)bit x8bit -X16 device(K9K2G16X0M): (1K + 32)bit x16bit • Automatic Program and Erase - Page Program-X8 device(K9K2G08X0M): (2K + 64)Byte -X16 device(K9K2G16X0M): (1K + 32)Word - Block Erase-X8 device(K9K2G08X0M): (128K + 4K)Byte -X16 device(K9K2G16X0M): (64K + 2K)Word • Page Read Operation - Page Size- X8 device(K9K2G08X0M): 2K-Byte - X16 device(K9K2G16X0M) : 1K-Word - Random Read : 25µs(Max.) - Serial Access1.8V device(K9K2GXXQ0M): 80ns(Min.) 3.3V device(K9XXGXXUXM): 50ns(Min.)256M x 8 Bit / 128M x 16 Bit NAND Flash Memory• Fast Write Cycle Time- Program time : 300µs(Typ.) - Block Erase Time : 2ms(Typ.)• Command/Address/Data Multiplexed I/O Port • Hardware Data Protection- Program/Erase Lockout During Power Transitions • Reliable CMOS Floating-Gate Technology - Endurance : 100K Program/Erase Cycles - Data Retention : 10 Years • Command Register Operation• Cache Program Operation for High Performance Program • Power-On Auto-Read Operation • Intelligent Copy-Back Operation • Unique ID for Copyright Protection • Package :- K9K2GXXX0M-YCB0/YIB048 - Pin TSOP I (12 x 20 / 0.5 mm pitch) - K9K2G08U0M-VCB0/VIB048 - Pin WSOP I (12X17X0.7mm) - K9K2GXXX0M-PCB0/PIB048 - Pin TSOP I (12 x 20 / 0.5 mm pitch)- Pb-free Package - K9K2G08U0M-FCB0/FIB048 - Pin WSOP I (12X17X0.7mm)- Pb-free Package * K9K2G08U0M-V,F(WSOPI ) is the same device as K9K2G08U0M-Y ,P(TSOP1) except package type.- K9W4GXXU1M-YCB0,PCB0/YIB0,PIB0 : Two K9K2G08U0M stacked.48 - Pin TSOP I (12 x 20 / 0.5 mm pitch)- K9W4GXXU1M-KCB0,ECB0/KIB0,EIB0 : Two K9K2G08U0M stacked.48 - Pin TSOP I (12 x 17 / 0.5 mm pitch)Offered in 256Mx8bit or 128Mx16bit, the K9K2GXXX0M is 2G bit with spare 64M bit capacity. Its NAND cell provides the most cost-effective solution for the solid state mass storage market. A program operation can be performed in typical 300µs on the 2112-byte(X8device) or 1056-word(X16 device) page and an erase operation can be performed in typical 2ms on a 128K-byte(X8 device) or 64K-word(X16 device) block. Data in the data page can be read out at 80ns(1.8V device) or 50ns(3.3V device) cycle time per byte(X8device) or word(X16 device). The I/O pins serve as the ports for address and data input/output as well as command input. The on-chip write controller automates all program and erase functions including pulse repetition, where required, and internal verification and margining of data. Even the write-intensive systems can take advantage of the K9K2GXXX0M ′s extended reliability of 100K program/erase cycles by providing ECC(Error Correcting Code) with real time mapping-out algorithm. The K9K2GXXX0M is an optimum solu-tion for large nonvolatile storage applications such as solid state file storage and other portable applications requiring non-volatility.An ultra high density solution having two 2Gb stacked with two chip selects is also available in standard TSOPI package.PRODUCT LISTPart Number Vcc Range OrganizationPKG TypeK9K2G08Q0M-Y ,P 1.7 ~ 1.95VX8TSOP1K9K2G16Q0M-Y ,P X16K9XXG08UXM-Y ,P ,K,E 2.7 ~ 3.6V X8K9XXG16UXM-Y ,P ,K,E X16K9K2G08U0M-V,FX8WSOP1PIN CONFIGURATION (TSOP1)K9K2GXXX0M-YCB0,PCB0/YIB0,PIB0X8X16X16X8PACKAGE DIMENSIONS48-PIN LEAD/LEAD FREE PLASTIC THIN SMALL OUT-LINE PACKAGE TYPE(I)48 - TSOP1 - 1220FUnit :mm/Inch0.787±0.00820.00±0.20#1#240.20+0.07-0.030.008+0.003-0.0010.500.0197#48#250.48812.40M A X12.000.4720.10 0.004M A X 0.250.010()0.039±0.0021.00±0.050.0020.05MIN0.0471.20MAX0.45~0.750.018~0.0300.724±0.00418.40±0.100~8°0.0100.25T Y P0.125+0.0750.0350.005+0.003-0.0010.500.020()48-pin TSOP1Standard Type 12mm x 20mm123456789101112131415161718192021222324484746454443424140393837363534333231302928272625N.C N.C N.C N.C N.C N.C R/B RE CE N.C N.C Vcc Vss N.C N.C CLE ALE WE WP N.C N.C N.C N.C N.CN.C N.C N.C N.C I/O7I/O6I/O5I/O4N.C N.C PRE Vcc Vss N.C N.C N.C I/O3I/O2I/O1I/O0N.C N.C N.C N.CN.C N.C N.C N.C N.C N.C R/B RE CE N.C N.C Vcc Vss N.C N.C CLE ALE WE WP N.C N.C N.C N.C N.CVss I/O15I/O7I/O14I/O6I/O13I/O5I/O12I/O4N.C PRE Vcc N.C N.C N.C I/O11I/O3I/O10I/O2I/O9I/O1I/O8I/O0VssPIN CONFIGURATION (WSOP1)K9K2G08U0M-VCB0,FCB0/VIB0,FIB0PACKAGE DIMENSIONS48-PIN LEAD/LEAD FREE PLASTIC VERY VERY THIN SMALL OUT-LINE PACKAGE TYPE (I)48 - WSOP1 - 1217FUnit :mm15.40±0.10#1#240.20+0.07-0.030.16+0.07-0.030.50T Y P (0.50±0.06)#48#2512.00±0.100.10+0.075-0.0350.58±0.040.70 MAX(0.1Min)17.00±0.200°~8°0.45~0.75123456789101112131415161718192021222324484746454443424140393837363534333231302928272625N.C N.C DNU N.C N.C N.C R/B RE CE DNU N.C Vcc Vss N.C DNU CLE ALE WE WP N.C N.C DNU N.C N.CN.C N.C DNU N.C I/O7I/O6I/O5I/O4N.C DNU N.C Vcc Vss N.C DNU N.C I/O3I/O2I/O1I/O0N.C DNU N.C N.CPIN CONFIGURATION (TSOP1)K9W4G08U1M-YCB0,PCB0/YIB0,PIB0PACKAGE DIMENSIONS48-PIN LEAD/LEAD FREE PLASTIC THIN SMALL OUT-LINE PACKAGE TYPE(I)48 - TSOP1 - 1220FUnit :mm/Inch0.787±0.00820.00±0.20#1#240.16+0.07-0.030.008+0.003-0.0010.500.0197#48#250.48812.40M A X12.000.4720.10 0.004M A X 0.250.010()0.039±0.0021.05±0.030.0020.02MIN0.0471.20MAX0.45~0.750.018~0.0300.724±0.00418.40±0.100~8°0.0100.25T Y P0.125+0.0750.0350.005+0.003-0.0010.500.020()48-pin TSOP1Standard Type 12mm x 20mm123456789101112131415161718192021222324484746454443424140393837363534333231302928272625N.C N.C N.C N.C N.C R/B2R/B1 RE CE1CE2N.C Vcc Vss N.C N.C CLE ALE WE WP N.C N.C N.C N.C N.CN.C N.C N.C N.C I/O7I/O6I/O5I/O4N.C N.C PRE Vcc Vss N.C N.C N.C I/O3I/O2I/O1I/O0N.C N.C N.C N.CX16N.C N.C N.C N.C N.C R/B2R/B1 RE CE1CE2N.C Vcc Vss N.C N.C CLE ALE WE WP N.C N.C N.C N.C N.CX16Vss I/O15I/O7I/O14I/O6I/O13I/O5I/O12I/O4N.C PRE Vcc N.C N.C N.C I/O11I/O3I/O10I/O2I/O9I/O1I/O8I/O0VssX8X8PIN CONFIGURATION (TSOP1)PACKAGE DIMENSIONS48-PIN LEAD/LEAD FREE PLASTIC THIN SMALL OUT-LINE PACKAGE TYPE (I)48 - TSOP1 - 1217FUnit :mm15.40±0.10#1#240.20+0.07-0.030.16+0.07-0.030.50T Y P (0.50±0.06)#48#2512.00±0.100.15+0.075-0.0351.00±0.031.15 MAX(0.02Min)17.00±0.200°~8°0.45~0.75123456789101112131415161718192021222324484746454443424140393837363534333231302928272625N.C N.C N.C N.C N.C R/B2R/B1 RE CE1CE2N.C Vcc Vss N.C N.C CLE ALE WE WP N.C N.C N.C N.C N.CN.C N.C N.C N.C I/O7I/O6I/O5I/O4N.C N.C PRE Vcc Vss N.C N.C N.C I/O3I/O2I/O1I/O0N.C N.C N.C N.CX16N.C N.C N.C N.C N.C R/B2R/B1 RE CE1CE2N.C Vcc Vss N.C N.C CLE ALE WE WP N.C N.C N.C N.C N.CX16Vss I/O15I/O7I/O14I/O6I/O13I/O5I/O12I/O4N.C PRE Vcc N.C N.C N.C I/O11I/O3I/O10I/O2I/O9I/O1I/O8I/O0VssX8X8K9W4G08U1M-KCB0,ECB0/KIB0,EIB048-pin TSOP112mm x 17mmPIN DESCRIPTIONNOTE : Connect all V CC and V SS pins of each device to common power supply outputs. Do not leave V CC or V SS disconnected.Pin Name Pin FunctionI/O 0 ~ I/O 7(K9K2G08X0M)I/O 0 ~ I/O 15(K9K2G16X0M)DATA INPUTS/OUTPUTSThe I/O pins are used to input command, address and data, and to output data during read operations. The I/O pins float to high-z when the chip is deselected or when the outputs are disabled.I/O8 ~ I/O15 are used only in X16 organization device. Since command input and address input are x8 oper-ation, I/O8 ~ I/O15 are not used to input command & address. I/O8 ~ I/O15 are used only for data input and output.CLECOMMAND LATCH ENABLEThe CLE input controls the activating path for commands sent to the command register. When active high, commands are latched into the command register through the I/O ports on the rising edge of the WE signal.ALEADDRESS LATCH ENABLEThe ALE input controls the activating path for address to the internal address registers. Addresses are latched on the rising edge of WE with ALE high.CE / CE1CHIP ENABLEThe CE / CE1 input is the device selection control. When the device is in the Busy state, CE / CE1 high is ignored, and the device does not return to standby mode in program or erase opertion. Regarding CE / CE1 control during read operation, refer to ’Page read’ section of Device operation .CE2CHIP ENABLEThe CE2 input enables the second K9K2GXXU0MREREAD ENABLEThe RE input is the serial data-out control, and when active drives the data onto the I/O bus. Data is valid tREA after the falling edge of RE which also increments the internal column address counter by one.WEWRITE ENABLEThe WE input controls writes to the I/O port. Commands, address and data are latched on the rising edge of the WE pulse.WPWRITE PROTECTThe WP pin provides inadvertent write/erase protection during power transitions. The internal high voltage generator is reset when the WP pin is active low.R/B / R/B1READY/BUSY OUTPUTThe R/B / R/B1 output indicates the status of the device operation. When low, it indicates that a program, erase or random read operation is in process and returns to high state upon completion. It is an open drain output and does not float to high-z condition when the chip is deselected or when outputs are disabled.R/B2READY/BUSY OUTPUTThe R/B2 output indicates the status of the second K9K2GXXU0MPREPOWER-ON READ ENABLEThe PRE controls auto read operation executed during power-on. The power-on auto-read is enabled when PRE pin is tied to Vcc.Vcc POWERV CC is the power supply for device. Vss GROUNDN.CNO CONNECTIONLead is not internally connected.Product IntroductionThe K9K2GXXX0M is a 2112Mbit(2,214,592,512 bit) memory organized as 131,072 rows(pages) by 2112x8(X8 device) or 1056x16(X16 device) columns. Spare 64(X8) or 32(X16) columns are located from column address of 2048~2111(X8 device) or 1024~1055(X16 device). A 2112-byte(X8 device) or 1056-word(X16 device) data register and a 2112-byte(X8 device) or 1056-word(X16 device) cache register are serially connected to each other. Those serially connected registers are connected to memory cell arrays for accommodating data transfer between the I/O buffers and memory cells during page read and page program opera-tions. The memory array is made up of 32 cells that are serially connected to form a NAND structure. Each of the 32 cells resides in a different page. A block consists of two NAND structured strings. A NAND structure consists of 32 cells. Total 1081344 NAND cells reside in a block. The program and read operations are executed on a page basis, while the erase operation is executed on a block basis. The memory array consists of 2048 separately erasable 128K-byte(X8 device) or 64K-word(X16 device) blocks. It indicates that the bit by bit erase operation is prohibited on the K9K2GXXX0M.The K9K2GXXX0M has addresses multiplexed into 8 I/Os(X16 device case : lower 8 I/Os). This scheme dramatically reduces pin counts and allows system upgrades to future densities by maintaining consistency in system board design. Command, address and data are all written through I/O's by bringing WE to low while CE is low. Those are latched on the rising edge of WE. Command Latch Enable(CLE) and Address Latch Enable(ALE) are used to multiplex command and address respectively, via the I/O pins. Some com-mands require one bus cycle. For example, Reset Command, Status Read Command, etc require just one cycle bus. Some other commands, like page read and block erase and page program, require two cycles: one cycle for setup and the other cycle for execu-tion. The 256M byte(X8 device) or 128M word(X16 device) physical space requires 29(X8) or 28(X16) addresses, thereby requiring four cycles for addressing: 2 cycles of column address, 3 cycles of row address, in that order. Page Read and Page Program need the same four address cycles following the required command input. In Block Erase operation, however, only the two row address cycles are used. Device operations are selected by writing specific commands into the command register. Table 1 defines the specific commands of the K9K2GXXX0M.The device provides cache program in a block. It is possible to write data into the cache registers while data stored in data registers are being programmed into memory cells in cache program mode. The program performace may be dramatically improved by cache program when there are lots of pages of data to be programmed.The device embodies power-on auto-read feature which enables serial access of data of the 1st page without command and address input after power-on.In addition to the enhanced architecture and interface, the device incorporates copy-back program feature from one page to another page without need for transporting the data to and from the external buffer memory. Since the time-consuming serial access and data-input cycles are removed, system performance for solid-state disk application is significantly increased.Table 1. Command SetsFunction1st. Cycle2nd. Cycle Acceptable Command during Busy Read 00h30hRead for Copy Back00h35hRead ID90h-Reset FFh-OPage Program80h10hCache Program80h15hCopy-Back Program85h10hBlock Erase60h D0hRandom Data Input*85h-Random Data Output*05h E0hRead Status70h ONOTE : 1. Random Data Input/Output can be executed in a page.Caution : Any undefined command inputs are prohibited except for above command set of Table 1.DC AND OPERATING CHARACTERISTICS (Recommended operating conditions otherwise noted.)NOTE : V IL can undershoot to -0.4V and V IH can overshoot to V CC +0.4V for durations of 20 ns or less.ParameterSymbol Test Conditions K9K2GXXQ0M(1.8V)K9XXGXXUXM(3.3V)UnitMin Typ Max Min Typ Max Operat-ingCurrent Page Read withSerial AccessI CC 1tRC=50ns, CE=V IL I OUT =0mA-1020-1530mA ProgramI CC 2--1020-1530EraseI CC 3--1020-1530Stand-by Current(TTL)I SB 1CE=V IH , WP=PRE=0V/V CC--1--1Stand-by Current(CMOS)I SB 2CE=V CC -0.2, WP=PRE=0V/V CC -20100-20100µA Input Leakage Current I LI V IN =0 to Vcc(max)--±20--±20Output Leakage Current I LO V OUT =0 to Vcc(max)--±20--±20Input High VoltageV IH*-V CC -0.4-V CC +0.3 2.0-V CC +0.3V Input Low Voltage, All inputs V IL*--0.3-0.4-0.3-0.8Output High Voltage Level V OH K9K2GXXQ0M:I OH =-100µA K9XXGXXUXM:I OH =-400µA Vcc-0.1-- 2.4--Output Low Voltage LevelV OL K9K2GXXQ0M :I OL =100uA K9XXGXXUXM :I OL =2.1mA --0.1--0.4Output Low Current(R/B)I OL (R/B)K9K2GXXQ0M :V OL =0.1V K9XXGXXUXM :V OL =0.4V34-810-mA RECOMMENDED OPERATING CONDITIONS(Voltage reference to GND, K9XXGXXXXM-XCB0 :T A =0 to 70°C, K9XXGXXXXM-XIB0:T A =-40 to 85°C)Parameter Symbol K9K2GXXQ0M(1.8V)K9XXGXXUXM(3.3V)Unit Min Typ.Max Min Typ.Max Supply Voltage V CC 1.7 1.8 1.95 2.7 3.3 3.6V Supply VoltageV SSVABSOLUTE MAXIMUM RATINGSNOTE :1. Minimum DC voltage is -0.6V on input/output pins. During transitions, this level may undershoot to -2.0V for periods <30ns. Maximum DC voltage on input/output pins is V CC,+0.3V which, during transitions, may overshoot to V CC +2.0V for periods <20ns.2. Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded. Functional operation should be restricted to the conditions as detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for extended periods may affect reliability.ParameterSymbol RatingUnit K9K2GXXQ0M(1.8V) K9XXGXXUXM(3.3V)Voltage on any pin relative to V SS V IN/OUT -0.6 to + 2.45-0.6 to + 4.6V V CC -0.2 to + 2.45-0.6 to + 4.6Temperature Under Bias K9XXGXXXXM-XCB0T BIAS -10 to +125°C K9XXGXXXXM-XIB0-40 to +125Storage Temperature K9XXGXXXXM-XCB0T STG -65 to +150°C K9XXGXXXXM-XIB0Short Circuit CurrentIos5mACAPACITANCE (T A =25°C, V CC =1.8V/3.3V, f=1.0MHz)NOTE : Capacitance is periodically sampled and not 100% tested.ItemSymbol Test ConditionMaxUnit K9K2GXXX0MK9W4GXXU1MInput/Output Capacitance C I/O V IL =0V 2040pF Input CapacitanceC INV IN =0V2040pFVALID BLOCKNOTE :1. The device may include invalid blocks when first shipped. Additional invalid blocks may develop while being used. The number of valid blocks is pre-sented with both cases of invalid blocks considered. Invalid blocks are defined as blocks that contain one or more bad bits . Do not erase or pro-gram factory-marked bad blocks. Refer to the attached technical notes for appropriate management of invalid blocks.2. The 1st block, which is placed on 00h block address, is guaranteed to be a valid block, does not require Error Correction up to 1K program/erase cycles.* : Each K9K2GXXX0M chip in the K9W4GXXU1M has Maximum 40 invalid blocks.ParameterSymbol Min Max Unit K9K2GXXX0M Valid Block Number N VB 20082048Blocks K9W4GXXU1MValid Block NumberN VB4016*4096*BlocksAC TEST CONDITION(K9XXGXXXXM-XCB0 :TA=0 to 70°C, K9XXGXXXXM-XIB0:TA=-40 to 85°CK9K2GXXQ0M : Vcc=1.70V~1.95V , K9XXGXXUXM : Vcc=2.7V~3.6V unless otherwise noted)ParameterK9K2GXXQ0M K9XXGXXUXM Input Pulse Levels 0V to Vcc 0.4V to 2.4VInput Rise and Fall Times 5ns 5ns Input and Output Timing LevelsVcc/21.5VK9K2GXXQ0M:Output Load (Vcc:1.8V +/-10%)K9XXGXXUXM:Output Load (Vcc:3.0V +/-10%) 1 TTL GATE and CL=30pF1 TTL GATE and CL=50pF K9XXGXXUXM:Output Load (Vcc:3.3V +/-10%)- 1 TTL GATE and CL=100pFMODE SELECTIONNOTE : 1. X can be V IL or V IH.2. WP and PRE should be biased to CMOS high or CMOS low for standby.CLE ALE CE WERE WP PRE Mode H L L H X X Read Mode Command Input L H L H X X Address Input(5clock)H L L H H X Write ModeCommand Input L H L H H X Address Input(5clock)L L L HH X Data Input L L L H X X Data Output X X X X H X X During Read(Busy)X X X X X H X During Program(Busy)X X X X X H X During Erase(Busy)X X (1)X X X L XWrite Protect XXHXX0V/V CC (2)0V/V CC (2) Stand-byAC Characteristics for OperationNOTE : 1. If reset command(FFh) is written at Ready state, the device goes into Busy for maximum 5us.ParameterSymbol Min Min Max Max Unit K9K2GXXQ0MK9K2GXXU0MK9K2GXXQ0MK9K2GXXU0MData Transfer from Cell to Register t R --2525µs ALE to RE Delay t AR 1010--ns CLE to RE Delay t CLR 1010--ns Ready to RE Low t RR 2020--ns RE Pulse Width t RP 6025--ns WE High to Busy t WB --100100ns Read Cycle Time t RC 8050--ns RE Access Time t REA --6030ns CE Access Time t CEA --7545ns RE High to Output Hi-Z t RHZ --3030ns CE High to Output Hi-Z t CHZ --2020ns RE or CE High to Output hold t OH 1515--ns RE High Hold Time t REH 2015--ns Output Hi-Z to RE Low t IR 00--ns WE High to RE Low t WHR 6060--ns Device Resetting Time (Read/Program/Erase)t RST--5/10/500(1)5/10/500(1)µsAC Timing Characteristics for Command / Address / Data InputNOTE : 1. If tCS is set less than 10ns, tWP must be minimum 35ns, otherwise, tWP may be minimum 25ns.Parameter Symbol MinMaxUnit K9K2GXXQ0MK9K2GXXU0MK9K2GXXQ0MK9K2GXXU0MCLE setup Time t CLS 00--ns CLE Hold Time t CLH 1010--ns CE setup Time t CS 00--ns CE Hold Time t CH 1010--ns WE Pulse Width t WP 6025(1)--ns ALE setup Time t ALS 00--ns ALE Hold Time t ALH 1010--ns Data setup Time t DS 2020--ns Data Hold Time t DH 1010--ns Write Cycle Time t WC 8045--ns WE High Hold Timet WH2015--nsProgram / Erase CharacteristicsNOTE : 1. Max. time of t CBSY depends on timing between internal program completion and data inParameterSym-Min Typ Max Unit Program Time t PROG -300700µs Dummy Busy Time for Cache Program t CBSY3700µs Number of Partial Program Cycles in the Same Page Main Array Nop --4cycles Spare Array--4cycles Block Erase Timet BERS-23msNAND Flash Technical NotesIdentifying Invalid Block(s)Invalid Block(s)Invalid blocks are defined as blocks that contain one or more invalid bits whose reliability is not guaranteed by Samsung. The infor-mation regarding the invalid block(s) is so called as the invalid block information. Devices with invalid block(s) have the same quality level as devices with all valid blocks and have the same AC and DC characteristics. An invalid block(s) does not affect the perfor-mance of valid block(s) because it is isolated from the bit line and the common source line by a select transistor. The system design must be able to mask out the invalid block(s) via address mapping. The 1st block, which is placed on 00h block address, is guaran-teed to be a valid block, does not require Error Correction up to 1K program/erase cycles.All device locations are erased(FFh for X8, FFFFh for X16) except locations where the invalid block(s) information is written prior to shipping. The invalid block(s) status is defined by the 1st byte(X8 device) or 1st word(X16 device) in the spare area. Samsung makes sure that either the 1st or 2nd page of every invalid block has non-FFh(X8) or non-FFFFh(X16) data at the column address of 2048(X8 device) or 1024(X16 device). Since the invalid block information is also erasable in most cases, it is impossible to recover the information once it has been erased. Therefore, the system must be able to recognize the invalid block(s) based on the original invalid block information and create the invalid block table via the following suggested flow chart(Figure 3). Any intentional erasure of the original invalid block information is prohibited.*Check "FFh( or FFFFh)" at the column address Figure 3. Flow chart to create invalid block table.StartSet Block Address = 0Check "FFh Increment Block AddressLast Block ?EndNoYesYesCreate (or update)NoInvalid Block(s) Tableof the 1st and 2nd page in the block2048(X8 device) or 1024(X16 device)or FFFFh" ?NAND Flash Technical Notes (Continued)Program Flow ChartStartI/O 6 = 1 ?Write 00hI/O 0 = 0 ?No*If ECC is used, this verification Write 80hWrite AddressWrite DataWrite 10hRead Status RegisterWrite AddressWait for tR TimeVerify DataFailProgram Completedor R/B = 1 ?Program ErrorYesNo Yes*Program ErrorPass: If program operation results in an error, map out the block including the page in error and copy thetarget data to another block.* operation is not needed.Error in write or read operationWithin its life time, additional invalid blocks may develop with NAND Flash memory. Refer to the qualification report for the actual data.The following possible failure modes should be considered to implement a highly reliable system. In the case of status read fail-ure after erase or program, block replacement should be done. Because program status fail during a page program does not affect the data of the other pages in the same block, block replacement can be executed with a page-sized buffer by finding an erased empty block and reprogramming the current target data and copying the rest of the replaced block.To improve the efficiency of mem-ory space, it is recommended that the read or verification failure due to single bit error be reclaimed by ECC without any block replacement. The said additional block failure rate does not include those reclaimed blocks.Failure Mode Detection and Countermeasure sequenceWriteErase FailureStatus Read after Erase --> Block Replacement Program Failure Status Read after Program --> Block ReplacementRead back ( Verify after Program) --> Block Replacementor ECC Correction ReadSingle Bit FailureVerify ECC -> ECC CorrectionECC: Error Correcting Code --> Hamming Code etc. Example) 1bit correction & 2bit detectionWrite 30hRead ID OperationCECLEWEALERE90hRead ID CommandMaker Code Device Code00h EChDevice t REAAddress. 1cycleXXh4th cyc.*ID Defintition Table90 ID : Access command = 90HDescription1st Byte 2nd Byte 3rd Byte 4th ByteMaker Code Device Code Don’t carePage Size, Block Size, Spare Size, OrganizationI/Oxt ARCode*Device Device Code*(2nd Cycle)4th Cycle*K9K2G08Q0M AAh 15h K9K2G08U0M DAh 15h K9K2G16Q0M BAh 55h K9K2G16U0M CAh55hK9W4G08U1M Same as each K9K2G08U0M in it K9W4G16U1MSame as each K9K2G16U0M in it。

电磁炉常用IGBT管型号及主要参数

电磁炉常用IGBT管型号及主要参数目前，用于电磁炉的I G B T管主要由：A I R C H I L D(美国仙童)、I N F I N E O N(德国英飞凌)、T O S H I B A(日本东芝)等几家国外公司生产，各公司对I G B T管的型号命名不尽相同，但大致有以下规律：1．管子型号前半部分数字表示该管的最大工作电流值，如：G40××××、20N××××就分别表示其最大工作电流为40A、20A。

2．管子型号后半部分数字则表示该管的最高耐压值，如：G×××150××、××N120x××就分别表示最高耐压值为1．5kV、1．2kV。

3．管子型号后缀字母含“D”则表示该管内含阻尼二极管。

但未标“D”并不一定是无阻尼二极管，因此在检修时一定要用万用表检测验证，避免出现不应有的损失。

一只I G B T管的技术参数较多，包括反向击穿电压(B V c e o)、集电极最大连续电流(I c)、输出功率、工作频率等参数。

例：G40N150D反向击穿电压BV ce o(V)1500集电极最大连续电流Ic(A)40工作电压(V)1000输出功率(w)>2000工作频率(k Hz)<100栅板门限电压UG e。

(V)5．5集、射极间饱和电压Uc e(v)3．5集、射极间是否有阻尼保护二极管内含阻尼保护二极管但在实际修理中，一般只需了解其反向击穿电压(BVceo，又称最高耐压)、集电极最大连续电流(Ic，简称最大电流)及管内是否有阻尼二极管即可。

IGBT管好坏的检测I G B T管的好坏可用指针万用表的R x l k挡来检测，或用数字万用表的“二极管”挡来测量PN结正向压降进行判断。

检测前先将I G B T管三只引脚短路放电，避免影响检测的准确度；然后用指针万用表的两枝表笔正反测G、e两极及G、c两极的电阻，对于正常的I G B T管（正常G、C两极与G、c两极间的正反向电阻均为无穷大；内含阻尼二极管的IG B T管正常时，e、C极间均有4kΩ正向电阻），上述所测值均为无穷大；最后用指针万用表的红笔接c极，黑笔接e极，若所测值在3．5kΩl左右，则所测管为含阻尼二极管的I G B T管，若所测值在50kΩ左右，则所测I G B T管内不含阻尼二极管。

SM39R16A3内嵌16KB具...

产品目录 (3)描述 (3)订货信息 (3)特征 (3)各封装引脚配置 (4)系统方框图 (6)管脚描述 (7)特殊功能寄存器(SFR) (8)功能描述 (12)1.总特征 (12)1.1嵌入式程序存储器 (12)1.2IO口 (12)1.3指令时钟周期选择 (12)1.4时钟输出选择 (13)1.5复位 (13)1.6时钟源 (15)2.指令设置 (16)3.存储器结构 (20)3.1程序存储器 (20)3.2数据存储器 (21)3.3数据内存-低128字节(00H TO 7F H) (21)3.4数据存储器-高128字节(80H TO FF H) (21)3.5存储器-扩展的256字节($00到$FF) (21)4.CPU结构 (22)4.1累加器 (22)4.2B寄存器 (22)4.3程序状态字 (23)4.4堆栈指针 (23)4.5数据指针 (23)4.6数据指针1 (24)4.7时钟控制寄存器 (24)4.8接口控制寄存器 (25)5.GPIO管脚型态 (26)6.定时器0 和定时器1 (28)6.1定时器/计数器模式控制寄存器(TMOD) (28)6.2定时/计数控制寄存器(TCON) (29)6.3定时器输入频率控制寄存器 (29)6.4模式0(13位定时/计数) (30)6.5模式1(16位定时/计数) (31)6.6模式2(8位自动重载定时/计数) (31)6.7模式3(两个独立8位定时/计数(仅定时器0)) (32)7.定时器2 以及捕捉/比较单元 (32)7.1定时器2功能 (35)7.2比较功能 (36)7.3捕获功能 (38)8.串行接口0 (39)8.1串行接口由以下4种模式可以设置 (40)8.2串行接口的多重机通讯 (42)8.3输入频率控制寄存器 (42)8.4波特率发生器 (42)9.看门狗定时器 (44)10.中断 (48)10.1优先权配置 (51)11.电源管理单元 (53)11.1待机模式(空闲模式) (53)11.2停止模式 (53)12.脉宽调制器(PWM) (54)13.IIC 功能 (57)14.SPI功能 (62)15.KBI –键盘接口 (67)16.LVI –低压侦测中断 (70)17.10位模拟数字转换器(ADC) (71)18.在系统编程(INTERNAL ISP) (75)18.1ISP服务程序 (75)18.2锁定位(N) (75)18.3对ISP服务程序编程 (76)18.4启动ISP服务程序 (76)18.5ISP寄存器–TAKEY,IFCON,ISPFAH,ISPFAL,ISPFD AND ISPFC (76)19.比较器(COMPARATOR) (80)工作环境 (83)DC电气特性 (83)ADC电气特性 (85)COMPARATOR 电气特性 (85)LVI& LVR电气特性 (86)产品目录SM39R16A3U20,SM39R16A3U16,SM39R16A3U14,描述原来的8052有12时钟结构,一个机器周期需要12个时钟，大多数指令是一个或两个机器周期.因此，除了乘和除指令, 8052的每个指令使用12或24个时钟,此外,8052中的每个周期用了两个记忆提取.在许多情况下，第二个是假的提取,和额外的时钟被浪费了该SM39R16A3是一个快速的单芯片8位微控制器内核.这是一个全功能的8位嵌入式控制器，执行所有ASM51指令,具有与MCS - 51相同的指令设置订货信息SM39R16A3ihhkL yymmvi: 工艺标志{ U = 1.8V ~ 5.5V}hh: 封装脚位k: 封装形式后缀{as table below }L: 无铅标志{无文字即含铅，”P” 即无铅}yy: 年mm: 月v: 版本标志{ A, B,…}Postfix PackageN PDIP (300 mil)S SOP (300 mil)O SOP (150 mil)G SSOP (150 mil) 特征●工作电压: 1.8V ~ 5.5V●高速1T 架构，最高可达25MHz●1~8T 模式可使用软件编程●指令设置兼容 MCS-51●内置22.1184MHz RC振荡器，及可程序化的分频器●16KB字节的片上闪存程序存储器●512B 字节的标准的8052 RAM●双16-bit 数据指针 (DPTR0&DPTR1)●一个全双工通信的串行接口.附加波特率产生器●三个16-bit 的定时器/计数器（计时器0，1，2）●12 ~18 GPIOs(14L~ 20L封装脚位)，GPIOs 可选择四种型态(准双向口、推挽、开漏、只输入)，默认准双向口(上拉)●具有四级优先权的外部中断0&外部中断1●可编程的看门狗定时器（WDT）●一个IIC 接口（主/从机模式）●一个SPI 接口（主/从机模式）●4路 10bit 脉宽调制(PWM)●4路16bit 比较(PWM)/捕获/重载功能●7路10bit 模拟数字转换（ADC）加上1路通道0链接内部Vref●片上内建比较器●片上闪存存储器支持ISP/IAP/ICP及EEPROM 功能●ISP服务程序存储空间设置为N*128 byte (N=0 to 8) ●片上在线仿真功能(ICE)及片上在线调试功能(OCD) ●键盘接口(KBI) 共4个的中断源●ALE 输出选择●低电压中断/低电压复位(LVI/LVR )●管脚ESD性能超过4KV●增强用户代码保护●电源管理单元空闲及掉电模式各封装引脚配置20 Pin PDIP/SOP/SSOPCmp1Out/SPICLK/KBI0/P0.0 PWM1/MOSI/CC2/P1.7PWM0/MISO/CC1/P1.6RST/P1.5VSSOSC_IN/XTAL1/P3.1CLKOUT/XTAL2/P3.0SS/INT1/P1.4 OCISDA/IICSDA/INT0/P1.3 OCISCL/IICSCL/T0/P1.2P0.1/KBI1/ADC1/Cmp1NInP0.2/KBI2/ADC2/Cmp1PInP0.3/KBI3/T2/ADC3/Cmp0NIn P0.4/ADC4/Cmp0PInP0.5/ADC5/CC0/PWM2 VDDP0.6/ADC6/Cmp0OutP0.7/T1/ADC7/CC3/PWM3P1.0/TXDP1.1/RXD/T2EX16 Pin SOPPWM0/MISO/CC1/P1.6RST/P1.5VSS OSC_IN/XTAL1/P3.1CLKOUT/XTAL2/P3.0SS/INT1/P1.4 OCISDA/IICSDA/INT0/P1.3 OCISCL/IICSCL/T0/P1.2P0.3/KBI3/T2/ADC3/Cmp0NIn P0.4/ADC4/Cmp0PInP0.5/ADC5/CC0/PWM2 VDDP0.6/ADC6/Cmp0OutP0.7/T1/ADC7/CC3/PWM3P1.0/TXDP1.1/RXD/T2EX14 Pin SOPSM39R16A3PWM0/MISO/CC1/P1.6RST/P1.5VSSOSC_IN/XTAL1/P3.1CLKOUT/XTAL2/P3.0OCISDA/IICSDA/INT0/P1.3P1.2/IICSCL/T0/OCISCLVDD P1.0/TXD P1.1/RXD/T2EX PWM1/MOSI/CC2/P1.7P0.0/KBI0/SPICLK/Cmp1Out P0.1/KBI1/ADC1/Cmp1NIn P0.2/KBI2/ADC2/Cmp1PIn附注：出厂默认值注意事项(1) 管脚RST/P1.5于出厂时设置为一般双向I/O(P1.5)脚，若使用者需切换为复位脚可于刻录时将此管脚定义为RESET 脚(2) 2. 为避免偶然的情况下误入ISP 刻录状态(参考第18.4单元)，在上电时请确保没有连续的脉冲信号在管脚RXD P1.1及管脚P1.6必须置高，可于刻录时(3) 3. OSI_SDA/P1.3及OCI_SCL/P1.2于复位期间为ICP 刻录功能管脚，复位完成后切换成双向I/O.系统方框图Port 0Port 1Port 3T0T1CC0~CC3T2T2EXI C _S C L P W M 0P W M 1R X DX Dm p 0N I n /C m 1N I n m p 0O u t /C m p 1O u tXTAL1XTAL2D C 1 D C 2 D C 3 I C _S D AP I _M I S O P I _M O S I P I _C L K P I _S SD C 4D C 5 D C 6 D C 7O C I _S C (s h a r e w i t h I I C O C I _S D (s h a r e w i t h I I C RESET m p 0P I n /C m p 1P I n P W M 2P W M 3管脚描述20L 16L 14L 代号I/O 描述1 - 14 P0.0/KBI0/SPICLK/ADC0/ CMP1OutI/O P0口的位0 & 键盘接口中断0 & SPI 接口时钟&模数转换通道0 &比较器1输出2 - 1 P1.7/CC2/MOSI/PWM1 I/O P1口的位7 &计时器2及捕获/比较单元通道2& SPI 接口串行数据线主输出或从输入口&宽脉调制通道13 1 2 P1.6/CC1/MISO/PWM0 I/O P1口的位6 &计时器2及捕获/比较单元通道1& SPI 接口串行数据线主输入或从输出口&宽脉调制通道04 2 3 P1.5/RST I/O P1口的位5 &复位 5 3 4 VSSI 供电电源地6 4 5 P3.1/XTAL1/OSC_IN I/O P3口的位1 &晶振输入&外部振荡器输入7 5 6 P3.0/XTAL2/CLKOUT I/O P3口的位0 &晶振输出&时钟输出8 6 - P1.4/INT1/SS I/O P1口的位4 &外部中断1& SPI 接口从机跳线9 7 7 P1.3/INT0/IICSDA/OCISDA I/O P1口的位3 &外部中断0 & IIC 串行数据线 & ICE 和 ICP 功能的指令及数据输入10 8 8 P1.2/T0/IICSCL/ OCISCL I/O P1口的位2 &计时器0外部输入& IIC 串行时钟线 & ICE 和 ICP 功能的时钟输入11 9 9 P1.1/RXD/T2EX I/O P1口的位1 & 串行接口通道接收/发送数据 & 计时器2捕捉触发及捕获触发器12 10 10 P1.0/TXDI/O P1口的位0 &串行接口通道数据传输或接收模式0时钟13 11 - P0.7/T1/ADC7/ CC3/PWM3I/O P0口的位7 &计时器1外部输入&模数转换通道7 &计时器2及捕获/比较单元通道3 &宽脉调制通314 12 - P0.6/ADC6/CMP0Out I/O P0口的位6 & 模数转换通道6 &比较器0输出 15 13 11 VDDI 数位电源电压16 14 - P0.5/ADC5/CC0/PWM2 I/O P0口的位5 & 模数转换通道5 &计时器2及捕获/比较单元通道0 &宽脉调制通道217 15 - P0.4/ADC4/ CMP0PIn I/O P0口的位4 & 模数转换通道4 & 比较器0非反向输入18 16 - P0.3/KBI3/T2/ ADC3/CMP0NIn I/O P0口的位3 & 键盘接口中断3 & 计时器2外部输入时钟 &模数转换通道3 & 比较器0反向输入19 - 12 P0.2/KBI2/ADC2/ CMP1PIn I/O P0口的位2 & 键盘接口中断2 & 模数转换通道2 & 比较器1非反向输入20-13P0.1/KBI1/ADC1/ CMP1NInI/OP0口的位0 & 键盘接口中断1 & 模数转换通道1 & 比较器1反向输入特殊功能寄存器(SFR)特殊功能寄存器分布图如下所示：注：SM39R16A3特殊功能寄存器的重置值在下表描述寄存器地址重置值描述SYSTEMSP 81h 07h Stack PointerACC E0h 00h AccumulatorPSW D0h 00h Program Status WordB F0h 00h B RegisterDPL 82h 00h Data Pointer 0 low byteDPH 83h 00h Data Pointer 0 high byteDPL1 84h 00h Data Pointer 1 low byteDPH1 85h 00h Data Pointer 1 high byteAUX 91h 00h Auxiliary registerPCON 87h 00h Power ControlCKCON 8Eh 10h Clock control registerINTERRUPT & PRIORITYIRCON C0h 00h Interrupt Request Control RegisterIRCON2 97h 00h Interrupt Request Control Register 2寄存器地址重置值描述IEN0 A8h 00h Interrupt Enable Register 0IEN1 B8h 00h Interrupt Enable Register 1IEN2 9Ah 00h Interrupt Enable Register 2IP0 A9h 00h Interrupt Priority Register 0IP1 B9h 00h Interrupt Priority Register 1KBIKBLS 93h 00h Keyboard level selector RegisterKBE 94h 00h Keyboard input enable RegisterKBF 95h 00h Keyboard interrupt flag RegisterKBD 96h 00h Keyboard interface De-bounce control register UARTPCON 87h 00h Power ControlAUX 91h 00h Auxiliary registerSCON 98h 00h Serial Port, Control RegisterSBUF 99h 00h Serial Port, Data BufferSRELL AAh 00h Serial Port, Reload Register, low byteSRELH BAh 00h Serial Port, Reload Register, high bytePFCON D9h 00h Peripheral Frequency control registerADCADCC1 ABh 00h ADC Control 1 RegisterADCC2 ACh 00h ADC Control 2 RegisterADCDH ADh 00h ADC data high byteADCDL AEh 00h ADC data low byteADCCS AFh 00h ADC clock selectWDTRSTS A1h 00h Reset status registerWDTC B6h 04h Watchdog timer control registerWDTK B7h 00h Watchdog timer refresh key.TAKEY F7h 00h Time Access Key registerPWMPWMC B5h 00h PWM control registerPWMD0H BCh 00h PWM channel 0 data high bytePWMD0L BDh 00h PWM channel 0 data low bytePWMD1H BEh 00h PWM channel 1 data high bytePWMD1L BFh 00h PWM channel 1 data low bytePWMD2H B1h 00h PWM channel 2 data high bytePWMD2L B2h 00h PWM channel 2 data low bytePWMD3H B3h 00h PWM channel 3 data high bytePWMD3L B4h 00h PWM channel 3 data low bytePWMMDH CEh 00h PWM Max Data Register, high byte. PWMMDL CFh FFh PWM Max Data Register, low byte.寄存器地址重置值描述TIMER0/TIMER1TCON 88h 00h Timer/Counter ControlTMOD 89h 00h Timer Mode ControlTL0 8Ah 00h Timer 0, low byteTL1 8Bh 00h Timer 1, low byteTH0 8Ch 00h Timer 0, high byteTH1 8Dh 00h Timer 1, high bytePFCON D9h 00h Peripheral Frequency control registerPCA(TIMER2)CCEN C1h 00h Compare/Capture Enable RegisterCCL1 C2h 00h Compare/Capture Register 1, low byteCCH1 C3h 00h Compare/Capture Register 1, high byteCCL2 C4h 00h Compare/Capture Register 2, low byteCCH2 C5h 00h Compare/Capture Register 2, high byteCCL3 C6h 00h Compare/Capture Register 3, low byteCCH3 C7h 00h Compare/Capture Register 3, high byteT2CON C8h 00h Timer 2 ControlCCCON C9h 00h Compare/Capture ControlCRCL CAh 00h Compare/Reload/Capture Register, low byte CRCH CBh 00h Compare/Reload/Capture Register, high byte TL2 CCh 00h Timer 2, low byteTH2 CDh 00h Timer 2, high byteCCEN2 D1h 00h Compare/Capture Enable 2 registerGPIOP0 80h FFh Port 0P1 90h FFh Port 1P3 B0h FFh Port 3P0M0 D2h 00h Port 0 output mode 0P0M1 D3h 00h Port 0 output mode 1P1M0 D4h 00h Port 1 output mode 0P1M1 D5h 00h Port 1 output mode 1P3M0 DAh 00h Port 3 output mode 0P3M1 DBh 00h Port 3 output mode 1ISP/IAP/EEPROMIFCON 8Fh 00h Interface control registerISPFAH E1h FFh ISP Flash Address-High registerISPFAL E2h FFh ISP Flash Address-Low registerISPFD E3h FFh ISP Flash Data registerISPFC E4h 00h ISP Flash control registerTAKEY F7h 00h Time Access Key registerLVI/LVR/SOFTRESET寄存器地址重置值描述RSTS A1h 00h Reset status registerLVC E6h 20h Low voltage control registerSWRES E7h 00h Software Reset registerTAKEY F7h 00h Time Access Key registerSPIAUX 91h 00h Auxiliary registerSPIC1 F1h 08h SPI control register 1SPIC2 F2h 00h SPI control register 2SPITXD F3h 00h SPI transmit data bufferSPIRXD F4h 00h SPI receive data bufferSPIS F5h 40h SPI status registerIICAUX 91h 00h Auxiliary registerIICS F8h 00h IIC status registerIICCTL F9h 04h IIC control registerIICA1 FAh A0h IIC channel 1 Address 1 registerIICA2 FBh 60h IIC channel 1 Address 2 registerIICRWD FCh 00h IIC channel 1 Read / Write Data buffer IICEBT FDh 00h IIC Enable Bus Transaction register OPAOPPIN F6h 00H Comparator Pin Select registerCMP0CON FEh 00h Comparator 0 Control registerCMP1CON FFh 00h Comparator 1 Control register功能描述1. 总特征SM39R16A3是一个8位的微处理器,它的所有功能以及特殊功能寄存器（SFR）的详细定义将在以下章节给出.1.1 嵌入式程序存储器可通过编程器或在线编程(ISP)将程序加载到16KB的嵌入式闪存体中,其高品质的闪存体具有100K次的重复可擦写编程并记忆数据，如EEPROM。

K6L0908C2A中文资料

Document Title64Kx8 bit Low Power CMOS Static RAM Revision HistoryRevision No.0.00.11.02.03.04.0RemarkDesign targetPreliminaryFinalFinalFinalFinal HistoryInitial draftRevisionFinalizeRevision- Add 45ns part with 30pf test load.Revision- Change Data Sheet format :One data sheets for industrial and commercial productRevision- Change Data Sheet format- Remove 45ns part from commercial product and 100ns partfrom industrial product- Remove low power part form TSOP packageDraft DataNovemer 28, 1993May 13, 1994December 1, 1994August 12, 1995April 15, 1996January 9, 1998The attached data, sheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and products. SAMSUNG Electronics will answer to your questions about device. If you have any questions, please contact the SAMSUNG branch offices.64Kx8 bit Low Power CMOS Static RAMGENERAL DESCRIPTIONThe K6L0908C2A families are fabricated by SAMSUNG ′s advanced CMOS process technology. The families support various operating temperature ranges and have various package types for user flexibility of system design. The families also support low data retention voltage for battery back-up operation with low data retention current.FEATURES• Process Technology: Poly Load • Organization: 64Kx8• Power Supply Voltage: 4.5~5.5V• Low Data Retention Voltage: 2V(Min)• Three state output and TTL Compatible• Package Type: 32-SOP-525, 32-TSOP1-0820FPIN DESCRIPTIONName Function CS 1, CS 2Chip Select Inputs OE Output Enable Input WE Write Enable Input A 0~A 15Address Inputs I/O 1~I/O 8Data Inputs/Outputs Vcc Power Vss Ground N.CNo ConnectionPRODUCT FAMILYProduct Family Operating TemperatureV CC RangeSpeedPower DissipationPKG TypeStandby (I SB1, Max)Operating (I CC2, Max)K6L0908C2A-L Commercial (0~70°C)4.5 to5.5V55/70ns100µA 70mA32-SOP 32-TSOP1-FK6L0908C2A-B 20µA K6L0908C2A-P Industrial (-40~85°C)70ns100µA K6L0908C2A-F50µAFUNCTIONAL BLOCK DIAGRAMSAMSUNG ELECTRONICS CO., LTD. reserves the right to change products and specifications without notice.A11A9A8A13WE CS2A15NC NC A14A12A7A6A5A4OE A10CS1I/O8I/O7I/O6I/O5I/O4VSS I/O3I/O2I/O1A0A1A2A332-TSOP Type1 - Forward3231302928272625242322212019181712345678910111213141516N.C A14A12A7A6A5A4A3A2A1A0I/O1I/O2I/O3VSSVCC A15CS2WE A13A8A9A11OE A10CS1I/O8I/O7I/O6I/O5I/O4323130292827262524232221201918171234567891011121314151632-SOPN.C VCCPRODUCT LISTCommercial Temperature Products(0~70°C)Industrial Temperature Products(-40~85°C)Part NameFunctionPart NameFunctionK6L0908C2A-GL55 K6L0908C2A-GB55 K6L0908C2A-GL70 K6L0908C2A-GB70K6L0908C2A-TB55 K6L0908C2A-TB7032-SOP, 55ns, L-pwr 32-SOP, 55ns, LL-pwr 32-SOP, 70ns, L-pwr 32-SOP, 70ns, LL-pwr32-TSOP1-F, 55ns, LL-pwr 32-TSOP1-F, 70ns, LL-pwrK6L0908C2A-GP70 K6L0908C2A-GF70K6L0908C2A -TF7032-SOP, 70ns, L-pwr 32-SOP, 70ns, LL-pwr 32-TSOP1-F, 70ns, LL-pwrFUNCTIONAL DESCRIPTION1. X means don ′t care.(Must be low or high state)CS 1CS 2OE WE I/O Pin Mode Power H X 1)X 1)X 1)High-Z Deselected Standby X 1)L X 1)X 1)High-Z Deselected Standby L H H H High-Z Output DisabledActive L H L H Dout Read Active LHX 1)LDinWriteActiveABSOLUTE MAXIMUM RATINGS 1)1. Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. Functional operation should be restricted to recommended operating condition. Exposure to absolute maximum rating conditions for extended periods may affect reliability.ItemSymbol Ratings Unit RemarkVoltage on any pin relative to Vss V IN ,V OUT -0.5 to 7.0V -Voltage on Vcc supply relative to Vss V CC -0.5 to 7.0V -Power Dissipation P D 1.0W -Storage temperature T STG -65 to 150°C -Operating Temperature T A 0 to 70°C K6L0908C2A-C -40 to 85°C K6L0908C2A-ISoldering temperature and timeT SOLDER260°C, 10sec(Lead Only)--RECOMMENDED DC OPERATING CONDITIONS 1)Note1. Commercial Product : T A =0 to 70°C, unless otherwise specified Industrial Product : T A =-40 to 85°C, unless otherwise specified2. Overshoot : V CC +3.0V in case of pulse width ≤30ns 3. Undershoot : -3.0V in case of pulse width ≤30ns4. Overshoot and undershoot are sampled, not 100% testedItemSymbol Min Typ Max Unit Supply voltage Vcc 4.5 5.0 5.5V GroundVss 000V Input high voltage V IH 2.2-Vcc+0.5V 2)V Input low voltageV IL-0.53)-0.8VCAPACITANCE 1)(f=1MHz, T A =25°C)1. Capacitance is sampled, not 100% testedItemSymbol Test ConditionMin Max Unit Input capacitance C IN V IN =0V -6pF Input/Output capacitanceC IOV IO =0V-8pFDC AND OPERATING CHARACTERISTICSItemSymbol Test ConditionsMin Typ Max Unit Input leakage current I LI V IN =Vss to Vcc-1-1µA Output leakage currentI LO CS 1=V IH or CS 2=V IL or OE=V IH or WE=V IL , V IO =Vss to Vcc -1-1µA Operating power supply current I CC I IO =0mA, CS 1=V IL , CS 2=V IH , V IN =V IH or V IL-715mA Average operating currentI CC1Cycle time=1µs, 100% duty, I IO =0mACS 1≤0.2V, CS 2≥V CC -0.2V, V IN ≤0.2V or V IN ≥Vcc -0.2V--10mA I CC2Cycle time=Min, 100% duty, I IO =0mA, CS 1=V IL , CS 2=V IH , V IN =V IH or V IL--70mA Output low voltage V OL I OL =2.1mA --0.4V Output high voltage V OH I OH =-1.0mA2.4--V Standby Current(TTL)I SB CS 1=V IH , CS 2=V IL , Other inputs =V IH or V IL--3mA Standby Current (CMOS)K6L0908C2A-L/-BI SB1CS 1≥Vcc-0.2V, CS 2≥Vcc-0.2V or CS 2≤0.2V Other inputs =0 ~ Vcc Low PowerLow Low Power --2110020µA K6L0908C2A-P/-FLow PowerLow Low Power--2110050µAAC CHARACTERISTICS (Vcc=4.5~5.5V, K6L0908C2A-C Family:T A =0 to 70°C, K6L0908C2A-I Family:T A =-40 to 85°C)Parameter ListSymbolSpeed BinsUnits55ns70nsMinMax Min Max ReadRead cycle time t RC 55-70-ns Address access time t AA -55-70ns Chip select to output t CO1, t CO2-55-70ns Output enable to valid outputt OE -25-35ns Chip select to low-Z output t LZ 10-10-ns Output enable to low-Z output t OLZ 5-5-ns Chip disable to high-Z output t HZ 020025ns Output disable to high-Z output t OHZ 020025ns Output hold from address change t OH 10-10-ns WriteWrite cycle timet WC 55-70-ns Chip select to end of write t CW 45-60-ns Address set-up time t AS 0-0-ns Address valid to end of writet AW 45-60-ns Write pulse width t WP 40-50-ns Write recovery time t WR 0-0-ns Write to output high-Z t WHZ 020025ns Data to write time overlap t DW 25-30-ns Data hold from write time t DH 0-0-ns End write to output low-Zt OW5-5-ns C L 1)1. Including scope and jig capacitanceAC OPERATING CONDITIONSTEST CONDITIONS ( Test Load and Input/Output Reference)Input pulse level : 0.8 to 2.4V Input rising and falling time : 5nsInput and output reference voltage :1.5V Output load(see right) : C L =100pF+1TTLDATA RETENTION CHARACTERISTICS1. CS 1≥Vcc-0.2V, CS 2≥Vcc-0.2V( CS 1 controlled) or CS 2≤0.2V(CS 2 controlled).ItemSymbolTest ConditionMin Typ Max Unit Vcc for data retentionV DRCS 11)≥Vcc-0.2V2.0- 5.5VData retention currentI DRK6L0908C2A-L/-BVcc=3.0V CS 1≥Vcc-0.2V CS 2≥Vcc-0.2V or CS 2≤0.2VL-Ver LL-Ver --10.55010µAK6L0908C2A-P/-FL-Ver LL-Ver----5025Data retention set-up time t SDR See data retention waveform 0--msRecovery timet RDR5--AddressData OutTIMMING DIAGRAMSTIMING WAVEFORM OF READ CYCLE(1) (Address Controlled , CS1=OE=V IL , WE=V IH )TIMING WAVEFORM OF READ CYCLE(2) (WE=V IH )Data ValidHigh-ZCS 1AddressOEData ou tNOTES (READ CYCLE)1. t HZ and t OHZ are defined as the time at which the outputs achieve the open circuit conditions and are not referenced to output voltage levels.2. At any given temperature and voltage condition, t HZ (Max.) is less than t LZ (Min.) both for a given device and from device to device interconnection.CS 2t OHt AA t OLZt LZt OHZt HZ(1,2)t RCt CO2t OEt CO1AddressCS 1TIMING WAVEFORM OF WRITE CYCLE(2) (CS 1 Controlled)AddressCS 1CS 2WEData inData outWEData inData out High-ZHigh-ZCS 2DATA RETENTION WAVE FORMCS 1 controlledV CC 4.5V2.2V V DRCS 1GNDAddressCS 1NOTES (WRITE CYCLE)1. A write occurs during the overlap of a low CS 1, a high CS 2 and a low WE. A write begins at the latest transition among CS 1 goes low,CS 2 going high and WE going low : A write end at the earliest transition among CS 1 going high, CS 2 going low and WE going high,t WP is measured from the begining of write to the end of write.2. t CW is measured from the CS 1 going low or CS 2 going high to the end of write.3. t AS is measured from the address valid to the beginning of write.4. t WR is measured from the end of write to the address change. t WR(1) applied in case a write ends as CS 1 or WE going high t WR(2)applied in case a write ends as CS 2 going to low.CS 2WEData inData outHigh-Z High-ZCS 2 controlledV CC 4.5V 0.4V V DR CS 2GNDPACKAGE DIMENSIONSUnits: millimeter(Inch) 32 PIN SMALL OUTLINE PACKAGE (525mil)32-THIN SMALL OUTLINE PACKAGE TYPE I (0820F)。

康佳通信销售管理部

目前手机屏幕，最高对比度的夏普CSH9020也只达到500：1而已，
注1：康佳K9达到前所未有的700：1超高对比度，色彩表现堪称顶级！
100~150CD\M2，康佳K9达到300CD\M2的超高手机屏幕亮度！
注2：顶级产品N96的屏幕亮度只有200CD\M2，市面一般手机屏幕亮度仅为
目前手机屏幕，最高亮度的松下VS7的也只达到300CD\M2而已，诺基亚
产品主要功能-国笔输入法
国笔智能输入法国笔输入法简介
国笔嵌入式文字智能输入系统，是由中国十大科技前沿人物之一高精鍊先生发
明并组织开发的一种嵌入式文字输入技术，为在数字小键盘电子设备上实现理想的文字输入提供了很大的便利，是“短信一族”的最爱。国笔输入法特色无缝功能：数字、中文，英文，标点无需要切换输入模式。支持中国人的词组、短句思维习惯输入中文强大的联想功能，词语丰富，支持多级联想自学习功能智能字词调频
产品主要功能- 移动图书馆 JVAV扩展、移动图书馆
移动图书馆
移动图书馆：
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本资料仅供内部参考，不能用于任何传播用途！本资料仅供内部参考，具体内容请以上市产品为准康佳通信销售管理部
K9概念-外观配色
康佳K9，只需一千多元就能享受价值八千多元的臻金手机同样的尊贵
K9还有玫瑰金、黄金配色机身可供选择；后续还将提高海洋之心蓝和郁金香粉紫两种配色，全面打造“风尚.臻”系列的时尚风格。

科敏k6迷你小冰箱说明书

科敏k6迷你小冰箱说明书科敏k6迷你小冰箱是国内领先的科敏k6迷你小冰箱研发、生产、销售创新品牌，专注于科敏k6迷你小冰箱业十余年，致力于打造“高效全能、完美生产”新概念。

科敏每一个产品都由国外设计师倾心打造，确保每款产品成为经典，时尚中凸显风格，为消费者带来无与伦比的车族生活体验。

科敏在产品应用上提供半导体科敏k6迷你小冰箱、压缩机型科敏k6迷你小冰箱等制冷产品，可以满足不同领域消费群体的多样需求。

从选料到做工、研发到认证，为消费者提供了最合心意的多样化的产品品类。

自成立以来，科敏致力于为客户提供更舒适安全的产品与服务，让科敏k6迷你小冰箱更贴近每位消费者的生活，创造更佳的用户体验。

在全国范围内，我们可与客户紧密联系，快速地提供最适合的科敏k6迷你小冰箱解决方案。

优点：容量大，双循环，够用，性价比不错，再大一些的话进不了门了刚刚好；冰箱挺好的，质量也不错。

外观很漂亮的四门冰箱，空间够大，性价比很高，节能省电。

冰箱的噪音很小很小，而且储存的空间很大，特别是冷冻箱有上下两个。

冰箱的外表中规中矩操作使用非常简单。

缺点：压缩机噪音有一点大标称40分贝得有60多分贝，白的不耐脏.风冷变频双开门都耗电大；总结：冷冻室内部的玻璃板太小不能放东西，老往下掉。

其他的基本都不错的。

如果在车上用肯定是不行的，因为车上的电池电量有限，长期开着且不说冰箱寿命，车载电池寿命也会更短，还容易引发安全事故。

如果你是放在家里变压电使用，只要冰箱本身质量过硬当然影响不大，但从能源节约上讲是不建议长期开着的，毕竟车载小冰箱在日常家用中起不了多大作用。

科敏k6迷你小冰箱怎样调温度；小冰箱温度可以按以下调节。

冰箱冷藏保鲜室温度可以设置在4-5度，这种温度有利于食物的保鲜，可以保鲜3-5天时间。

冰箱急冻室可以设置在零下-18度，这种零下温度在急冻时，是比较快的，有利于是加快食品快速结冻。

以上冰箱的温度设置可以一年四季常年不变的。

LK系列(TAIYO叠层功率电感)

电感量公差
±10% ±20%
Ｑ值（min.）
10 10 10 10 10 10 20 20 20 20 20 20 20 20 20 20
自共振频率直流电阻〔MHz〕(min.) 〔Ω（〕max.）
180
0.59
165
0.63
150
0.76
135
0.79
120
0.91
105
1.05
85
0.41
30
10
LK 1608 5R6□
RoHS
5.6
35
22
1.10
10
4
LK 1608 6R8□
RoHS
6.8
35
20
1.30
10
4
LK 1608 8R2□
RoHS
8.2
35
18
1.50
10
4
LK 1608 100□
RoHS
10
35
17
1.70
10
2
LK 1608 120□
RoHS
12
35
15
1.80
10
（Imax.[mA]）
300
270
250
200
150
80
50
30
15
5
■ 型号一览
●LK1005
型号
EHS
LK 1005 R12□ LK 1005 R15□ LK 1005 R18□ LK 1005 R22□ LK 1005 R27□ LK 1005 R33□ LK 1005 R39□ LK 1005 R47□ LK 1005 R56□ LK 1005 R68□ LK 1005 R82□ LK 1005 1R0□ LK 1005 1R2□ LK 1005 1R5□ LK 1005 1R8□ LK 1005 2R2□ （注）请在型号的□中指定电感量公差代码（M或K）。

洗衣机位号

代码物料名称物料代号代表厂家BXWK温控器BXWKC常州常恒BXWKF滁州凤凰BXBY变压器BXBYH深圳华宁BXBYD无锡东洋BXDC电磁阀BXDCK上海康源BXZB主电路板BXZD6青岛海立隆BXZD0青岛海立隆BXZD7浙江达峰BXZD9浙江达峰BXKZ控制面板BXKZ6青岛海立隆BXKZ0青岛海立隆BXKZ7浙江达峰BXKZ9浙江达峰BXYS压缩器BXYSD天津扎努西BXYSS上海扎努西BXYSB北京恩布拉科代码物料名称物料代号代表厂家备注BXWK温控器BXWKC常州常恒通用BXYSH黄石东贝BXWKF滁州凤凰BXBY变压器BXBYH深圳华宁通用BXBYD无锡东洋BXDC电磁阀BXDCK上海康源电脑温控通用/196E.176/196HTZXBXZB主电路板BXZD6青岛海立隆BXZD0青岛海立隆200/220HYZBBXZD7浙江达峰197JH/219JHBXZD9浙江达峰199RE/219RE/196E.176/196HYZXBXKZ控制面板BXKZ6青岛海立隆BXKZ0青岛海立隆200/220HYZBBXKZ7浙江达峰197JH/217JHBXKZ9浙江达峰199RE/219REGVY53AT.OF1350CBXYS压缩器BXYSD天津扎努西OF1260C.M1260T.GVY57ATQS90AA.HQS80AA.BXYSS上海扎努西HQM90AA.GQS55AA.GQR70AACQ50CLC.ECQ40CLCBXYSB北京恩布拉科ECY50CLP.ECS60BLP.ECS45BLP.ECS60HLP.ECT55HLP.ECT50GLP BXYSH黄石东贝92Y.QD88YG.QD59.QD30B.E1114CZ备注通用通用电脑温控通用176/196E.176/196HTZX 200/220HYZB197JH/219JH199RE/219RE176/196E.176/196HYZX 200/220HYZB197JH/217JH199RE/219REGVY53AT.OF1350COF1260C.M1260T.GVY57ATHQS90AA.HQS80AA. HQM90AA.GQS55AA.GQR70AAECQ50CLC.ECQ40CLCECY50CLP.ECS60BLP. ECS45BLP.ECS60HLP. ECT55HLP.ECT50GLP QD92Y.QD88YG.QD59.QD30B.E1114CZ。

L20A6A-T0(增强型)易损件明细表

保险丝0251-007
1
力特
U1
0094401773
集成电路AM29LV800BT-90EC
1
艾睿电子
T4
0094401941
稳压块IRF7314
1
艾睿电子
0090805533
海尔标牌丝网印
1
海尔毅昌
D1
0094401759
二极管IN5822
1
艾睿电子
U10
0094401769
集成电路TDA1517P
项目代号
代号
名称型号规格
（基本数据）
数量
厂家
更改
0094401874
贴片二极管BAV99,215
1
艾睿电子
0094300481
LCD屏连接线
1
MOLEX
J1
0090402004
贴片插座
1
MOLEX
0090205593
前框
1
海尔毅昌
LED0
0094401957
双色发光二极管RED
1
F1
0094401944
1
艾睿电子
U2
0094401948
集成电路TB1274AF
1
东芝
U3
0094401949
集成电路TC90A69F
1
东芝
U5
0094401937
集成电路P15V330QX
1
安富利
U9
0094401769
集成电路TDA1517P
1
艾睿电子
1
旧底图总号
更改标记
数量
更改单号
签名
日期
底图总号

海信电视锁定菜单通用密码汇总

海信电视锁定菜单通用密码汇总1．A12机芯（LA76810）通用密码：7681 代表机型：TC1423 TC2175G TC2181F TC2961L TC2588D/L TC2199/D/M/A TF2 110D等2．LA76818机芯通用密码：7688 代表机型：TC1418H TC2102H TC2188H TC2502H/06H TC2588H TF2502H TF2588H等3．TB1238机芯通用密码：1238（或2175，但限次数）代表机型：TC2100 TC2139A TC2175/A TC2500 TC2566D TC2900 TC2902G TC29 10D TC2940A TF2988/G TF2989 TF25100等4．TB1251机芯通用密码：1251 代表机型：TC2908U TC3401 TC3842D/3488D TF2908U TF3488D等5．H98C（TB1227）机芯通用密码：8888 代表机型：TF2900DP TF2988DP TF3488DP等6．TG-1B(TB1227)无通用密码,锁定后需换存储器代表机型TC2978N TF2998D TC3418D TF2999A等7．H97B (TA8880)机芯通用密码：8880 代表机型：TC2939系列TC2979系列TC3418系列TF2999G/N等8．21～25寸飞利浦UOC（TDA9373、9370）通用密码：1963 代表机型：TC2102D/F TC2175GF TF2106D TF2107F TF2507F等9．29寸飞利浦UOC(UOC001、UOC002) 通用密码：9012 代表机型：TC2906H TC2908UF TC2911AL TC2911UF TC2977 TC2418UF TF2906H/07 H TF2911UF等10．21寸东芝单片TMPA8823（8803）通用密码：3088 代表机型：TC2111A TC2118H TF2106A等11．25～34寸东芝单片TMPA8829(8809) 通用密码：设定到186频道，按AV1，输入88090916 代表机型：TF2902D TF3406D TF2902DH TC2918DH TF2902DH 等12．TDF2988(西门子胶片系列) 通用密码：8888/9400 代表机型：TDF2918 TDF2988 ETV2988等13．DP2999（NDSP胶片系列）通用密码：8843（或2999）代表机型：DP2999 ITV2911 ITV2988等14．泰鼎胶片系列通用密码：8052 童锁功能可按遥控任意键解开代表机型：DP2988H DP2906H等15．飞利浦胶片系列通用密码：7118 代表机型：TDF2901 DP2906G16.（飞利浦数字高清系列）初始密码：8888 通用密码：7118 代表机型：HDP2908/HDP2906D/HDP3406D17.泰鼎高清系列通用密码：8052 使用遥控器开机即可解开童锁功能代表机型：HDP2902H/06H HDP2910L HDP2919 HDP3406H HDP3410L等18.GS高清系列通用密码：5147 代表机型：HDP2911G/H HDP2919H HDP3411G/H HDP3419H等19. HDTV系列通用密码：8052 代表机型：HDTV320120. MST系列初始密码：8888 通用密码：6126代表机型：HDP291021.液晶TLM3277 通用密码：1111超级密码：同时按遥控器上“静音”和“9”键1．A12机芯（LA76810）76812．LA76818机芯7688 3．TB1238机芯1238 4．TB1251机芯1251 5．TB1227（H98C）机芯88886．TB1227(TG-1B) 无通用密码,锁定后需换存储器7．TA8880(H97B)机芯88808．21～25寸飞利浦UOC（TDA9373、9370）19639．29寸飞利浦UOC(UOC001、UOC002) 901210．21寸东芝单片TMPA8823（8803）308811．25～34寸东芝单片TMPA8829(8809) 设定到186频道，按AV1，输入8809091612．TDF2988(西门子胶片系列) 940013．DP2999（NDSP胶片系列）8843（或2999）14．DP2988H(泰鼎胶片系列) 805215．HDP2906D（新飞利浦高清胶片系列）7118。

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Document Title64Kx8 bit Low Power and Low Voltage CMOS Static RAMRevision HistoryThe attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and products. SAMSUNG Electronics will answer to your questions about device. If you have any questions, please contact the SAMSUNG branch offices.Revision No.0.00.11.02.03.0RemarkAdvance PreliminaryFinal FinalFinalHistoryDesign targetInitial draft- One datasheet for commercial, extended and industrial product. - Add 85ns part on KM68V512AFamily.FinalizeRevise- Add 32-sTSOP type package on product.Revise- Change datasheet format- Improve power dissipation 0.7 to 1.0WDraft DataJanuary 17, 1996April 15, 1996June 17, 1996September 10, 1996February 12, 199864Kx8 bit Low Power and Low Voltage CMOS Static RAMGENERAL DESCRIPTIONThe K6L0908V2A and K6L0908U2A families are fabricated by SAMSUNG ′s advanced CMOS process technology. The families support various operating temperature ranges and have various package types for user flexibility of system design. The family also support low data retention voltage for battery back-up operation with low data retention current.FEATURES• Process Technology: Poly Load • Organization: 64Kx8• Power Supply VoltageK6L0908V2A family: 2.7~3.3V K6L0908U2A family: 3.0~3.3V• Low Data Retention Voltage: 2V(Min)• Three state output and TTL Compatible• Package Type: 32-SOP-525, 32-TSOP1-0820F,32-TSOP1-0813.4FPIN DESCRIPTIONName Name FunctionCS 1,CS 2Chip Select Inputs OE Output Enable Input WE Write Enable Input A 0~A 15Address Inputs I/O 1~I/O 8Data Inputs/Outputs Vcc Power Vss Ground N.CNo ConnectionPRODUCT FAMILY1. The parameter is measured with 30pF test load.Product Family Operating TemperatureV CC Range Speed Power DissipationPKG TypeStandby (Isb 1, Max)Operating (Icc 2, Max)K6L0908V2A-B Commercial(0~70°C)3.0 ~ 3.6V 701)/85/100ns 10µA 40mA32-SOP32-TSOP1-F 32-sTSOP1-FK6L0908U2A-B 2.7 ~ 3.3V 851)/100ns 10µA K6L0908V2A-D Extended(-25~85°C) 3.0 ~ 3.6V 701)/85/100ns 20µA K6L0908U2A-D 2.7 ~ 3.3V 851)/100ns 15µA K6L0908V2A-F Industrial (-40~85°C)3.0 ~ 3.6V 701)/85/100ns 20µA K6L0908U2A-F2.7 ~3.3V851)/100ns15µAFUNCTIONAL BLOCK DIAGRAM32-TSOP Type1 - Forward (8mm x 20mm)(8mm x 13.4mm)32-SOPN.C A14A12A7A6A5A4A3A2A1A0I/O1I/O2I/O3VSSVCC A15WE A13A8A9A11OE A10CS1I/O8I/O7I/O6I/O5I/O43231302928272625242322212019181712345678910111213141516N.C CS2A11A9A8A13WE CS2A15VCC N.C N.C A14A12A7A6A5A4OE A10CS1I/O8I/O7I/O6I/O5I/O4VSS I/O3I/O2I/O1A0A1A2A332313029282726252423222120191817123456789101112131415163231302928272625242322212019181712345678910111213141516OE A10CS1I/O8I/O7I/O6I/O5I/O4VSS I/O3I/O2I/O1A0A1A2A3A11A9A8A13WE CS2A15VCC N.C N.C A14A12A7A6A5A4SAMSUNG ELECTRONICS CO., LTD. reserves the right to change products and specifications without notice.32-sTSOP Type1 - ForwardPRODUCT LISTCommercial Temperature Products(0~70°C)Extended Temperature Products(-25~85°C)Industrial Temperature Products(-40~85°C)Part NameFunctionPart NameFunctionPart NameFunctionK6L0908V2A-GB70 K6L0908V2A-GB85K6L0908V2A-GB10K6L0908V2A-TB70 K6L0908V2A-TB85K6L0908V2A-TB10K6L0908V2A-YB70 K6L0908V2A-YB85K6L0908V2A-YB10K6L0908U2A-GB85K6L0908U2A-GB10K6L0908U2A-TB85K6L0908U2A-TB10K6L0908U2A-YB85K6L0908U2A-YB1032-SOP, 70ns, 3.3V, LL 32-SOP, 85ns, 3.3V, LL 32-SOP, 100ns, 3.3V, LL 32-TSOP F, 70ns, 3.3V, LL 32-TSOP F, 85ns, 3.3V, LL 32-TSOP F, 100ns, 3.3V,LL 32-sTSOP F,70ns,3.3V,LL32-sTSOP F,85ns,3.3V,LL 32-sTSOP F,100ns,3.3V,LL32-SOP, 85ns, 3.0V, LL 32-SOP, 100ns, 3.0V, LL 32-TSOP F, 85ns, 3.0V, LL 32-TSOP F, 100ns, 3.0V, LL 32-sTSOP F, 85ns, 3.0V, LL 32-sTSOP F, 100ns,3.0V, LLK6L0908V2A-GD70 K6L0908V2A-GD85K6L0908V2A-GD10K6L0908V2A-TD70 K6L0908V2A-TD85K6L0908V2A-TD10K6L0908V2A-YD70 K6L0908V2A-YD85K6L0908V2A-YD10K6L0908U2A-GD85K6L0908U2A-GD10K6L0908U2A-TD85K6L0908U2A-TD10K6L0908U2A-YD85K6L0908U2A-YD1032-SOP, 70ns, 3.3V, LL 32-SOP, 85ns, 3.3V, LL 32-SOP, 100ns, 3.3V, LL 32-TSOP F, 70ns, 3.3V, LL 32-TSOP F, 85ns, 3.3V, LL 32-TSOP F, 100ns, 3.3V,LL 32-sTSOP F,70ns,3.3V,LL 32-sTSOP F,85ns,3.3V,LL 32-sTSOP F,100ns,3.3V,LL 32-SOP, 85ns, 3.0V, LL 32-SOP, 100ns, 3.0V, LL 32-TSOP F, 85ns, 3.0V, LL 32-TSOP F, 100ns, 3.0V, LL 32-sTSOP F, 85ns, 3.0V, LL 32-sTSOP F, 100ns,3.0V, LLK6L0908V2A-GF70 K6L0908V2A-GF85K6L0908V2A-GF10K6L0908V2A-TF70 K6L0908V2A-TF85K6L0908V2A-TF10K6L0908V2A-YF70 K6L0908V2A-YF85K6L0908V2A-YF10K6L0908U2A-GF85K6L0908U2A-GF10K6L0908U2A-TF85K6L0908U2A-TF10K6L0908U2A-YF85K6L0908U2A-YF1032-SOP, 70ns, 3.3V, LL 32-SOP, 85ns, 3.3V, LL 32-SOP, 100ns, 3.3V, LL 32-TSOP F, 70ns, 3.3V, LL 32-TSOP F, 85ns, 3.3V, LL 32-TSOP F, 100ns, 3.3V,LL 32-sTSOP F,70ns,3.3V,LL 32-sTSOP F,85ns,3.3V,LL 32-sTSOP F,100ns,3.3V,LL 32-SOP, 85ns, 3.0V, LL 32-SOP, 100ns, 3.0V, LL 32-TSOP F, 85ns, 3.0V, LL 32-TSOP F, 100ns, 3.0V, LL 32-sTSOP F, 85ns, 3.0V, LL 32-sTSOP F, 100ns,3.0V, LLFUNCTIONAL DESCRIPTION1. X means don ′t care(Must be low or high state.)CS 1CS 2OE WE I/O Mode Power H X 1)X 1)X 1)High-Z Deselected Standby X 1)L X 1)X 1)High-Z Deselected Standby L H H H High-Z Output DisabledActive L H L H Dout Read Active LHX 1)LDinWriteActiveABSOLUTE MAXIMUM RATINGS 1)1. Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. Functional operation should be restricted to recommended operating condition. Exposure to absolute maximum rating conditions for extended periods may affect reliability.ItemSymbol Ratings Unit RemarkVoltage on any pin relative to Vss V IN ,V OUT -0.5 to V CC +0.5V -Voltage on Vcc supply relative to V CC -0.3 to 4.6V -Power Dissipation P D 1.0W -Storage temperature T STG -65 to 150°C -Operating TemperatureT A0 to 70°C K6L0908V2A-B, K6L0908U2A-B -25 to 85°C K6L0908V2A-D, K6L0908U2A-D -40 to 85°C K6L0908V2A-F, K6L0908U2A-FSoldering temperature and timeT SOLDER260°C, 10sec (Lead Only)--RECOMMENDED DC OPERATING CONDITIONS 1)Note:1. Commercial Product : T A =0 to 70°C, otherwise specified Extended Product : T A =-25 to 85°C, otherwise specified Industrial Product : T A =-40 to 85°C, otherwise specified2. Overshoot : V CC +3.0V in case of pulse width ≤30ns 3. Undershoot : -3.0V in case of pulse width ≤30ns4. Overshoot and undershoot are sampled, not 100% testedItemSymbol Product Min Typ Max Unit Supply voltage Vcc K6L0908V2A Family 3.0 3.3 3.6V K6L0908U2A Family2.73.0 3.3V GroundVss All Family000V Input high voltage V IH K6L0908V2A, K6L0908U2A Family 2.2-Vcc+0.3V 2)V Input low voltageV ILK6L0908V2A, K6L0908U2A Family-0.33)-0.4VCAPACITANCE 1) (f=1MHz, T A =25°C)1. Capacitance is sampled, not 100% testedItemSymbol Test ConditionMin Max Unit Input capacitance C IN V IN =0V -6pF Input/Output capacitanceC IOV IO =0V-8pFDC AND OPERATING CHARACTERISTICSItemSymbol Test ConditionsMin Typ Max Unit Input leakage current I LI V IN =Vss to Vcc-1-1µA Output leakage current I LO CS 1=V IH or CS 2=V IL or OE=V IH or WE=V IL , V IO =Vss to Vcc -1-1µA Operating power supply currentI CC I IO =0mA, CS 1=V IL , CS 2=V IH, V IN =V IH or V IL--5mA Average operating currentI CC1Cycle time=1µs, 100% duty, I IO =0mA,CS 1≤0.2V, CS 2≥Vcc-0.2V, V IN ≤0.2V or V IN ≥Vcc-0.2V --5mA I CC2Cycle time=Min, 100% duty, I IO =0mA CS 1=V IL , CS 2=V IH , V IN =V IL or V IH --40mA Output low voltage V OL I OL =2.1mA --0.4V Output high voltage V OH I OH =-1.0mA2.4--V Standby Current(TTL)I SBCS 1=V IH , CS 2=V IL , Other inputs=V IL or V IH--0.3mA Standby Current(CMOS)I SB1CS 1≥Vcc-0.2V, CS 2≥Vcc-0.2V, or CS 2≤0.2V , Other inputs=0~VccK6L0908V2A-B--10µA K6L0908V2A-D K6L0908V2A-F --20µA K6L0908U2A-B --10µA K6L0908U2A-D K6L0908U2A-F--15µAAC CHARACTERISTICS (K6L0908V2B Family:Vcc=3.0~3.6V, K6L0908U2B Family:Vcc=2.7~3.3V,Commercial product:T A =0 to 70°C, Extended product:T A =-25 to 85°C, Industrial product:T A =-40 to 85°C)Parameter ListSymbolSpeed BinsUnits70ns85ns100nsMinMax Min Max Min Max ReadRead cycle time t RC 70-85-100-ns Address access time t AA -70-85-100ns Chip select to output t CO -70-85-100ns Output enable to valid outputt OE -35-45-50ns Chip select to low-Z output t LZ 10-10-10-ns Output enable to low-Z output t OLZ 5-5-5-ns Chip disable to high-Z output t HZ 025030030ns Output disable to high-Z output t OHZ 025020020ns Output hold from address change t OH 10-10-15-ns WriteWrite cycle timet WC 70-85-100-ns Chip select to end of write t CW 60-70-80-ns Address set-up time t AS 0-0-0-ns Address valid to end of writet AW 60-70-80-ns Write pulse width t WP 55-60-70-ns Write recovery time t WR 0-0-0-ns Write to output high-Z t WHZ 025025030ns Data to write time overlap t DW 30-35-40-ns Data hold from write time t DH 0-0-0-ns End write to output low-Zt OW5-5-5-ns C L 1)1. Including scope and jig capacitanceAC OPERATING CONDITIONSTEST CONDITIONS ( Test Load and Input/Output Reference)Input pulse level : 0.4 to 2.2V Input rising and falling time : 5nsInput and output reference voltage :1.5V Output load(see right) : C L =100pF+1TTL1)C L =30pF+1TTL1. K6L0908V2A-70 Family, K6L0908U2A-85 FamilyDATA RETENTION CHARACTERISTICS1. CS 1≥Vcc-0.2V, CS 2 ≥Vcc-0.2V( CS 1 controlled) or CS 2≤0.2V(CS 2 controlled)ItemSymbolTest ConditionMin Typ Max Unit Vcc for data retentionV DRCS 11)≥Vcc-0.2V2.0-3.6VData retention current I DRK6L0908V2A-B K6L0908V2A-D K6L0908V2A-F Vcc=3.0V, CS 1≥Vcc-0.2V, CS 2≥Vcc-0.2V or CS 2≤0.2V------101515µAK6L0908U2A-B K6L0908U2A-D K6L0908U2A-F ------81010Data retention set-up time t SDR See data retention waveform 0--msRecovery timet RDR5--AddressData OutPrevious Data ValidData ValidTIMMING DIAGRAMSTIMING WAVEFORM OF READ CYCLE(1) (Address Controlled , CS 1=OE=V IL , WE=V IH )t AAt RCt OHTIMING WAVEFORM OF READ CYCLE(2) (WE=V IH )Data ValidHigh-ZCS 1AddressOEData ou tNOTES (READ CYCLE)1. t HZ and t OHZ are defined as the time at which the outputs achieve the open circuit conditions and are not referenced to output voltage levels.2. At any given temperature and voltage condition, t HZ (Max.) is less than t LZ (Min.) both for a given device and from device to device interconnection.CS 2t OHt AA t OLZt LZt OHZt HZ(1,2)t RCt CO2t OEt CO1TIMING WAVEFORM OF WRITE CYCLE(1) (WE Controlled)AddressCS 1TIMING WAVEFORM OF WRITE CYCLE(2) (CS 1 Controlled)AddressCS 1t WCt WR(4)t AS(3)CS 2WEData inData outt DWt DHData ValidWEData inData out High-ZHigh-ZCS 2t CW(2)t WP(1)t AWDATA RETENTION WAVE FORMCS 1 controlledV CC 3.0/2.7V2.2V V DRCS 1GNDTIMING WAVEFORM OF WRITE CYCLE(3) (CS 1 Controlled)AddressCS 1t AWNOTES (WRITE CYCLE)1. A write occurs during the overlap of a low CS 1, a high CS 2 and a low WE. A write begins at the latest transition among CS 1 goes low,CS 2 going high and WE going low : A write end at the earliest transition among CS 1 going high, CS 2 going low and WE going high,t WP is measured from the begining of write to the end of write.2. t CW is measured from the CS 1 going low or CS 2 going high to the end of write.3. t AS is measured from the address valid to the beginning of write.4. t WR is measured from the end of write to the address change. t WR(1) applied in case a write ends as CS 1 or WE going high t WR(2)applied in case a write ends as CS 2 going to low.CS 2t CW(2)WEData inData ValidData outHigh-Z High-Zt CW(2)t WR(4)t WP(1)t DWt DHt AS(3)t WCCS 2 controlledV CC 3.0/2.7V 0.4V V DR CS 2GND.32 PIN SMALL OUTLINE PACKAGE (525mil)32 PIN THIN SMALL OUTLINE PACKAGE TYPE I (0820F)20.00±0.20+0.1032 PIN THIN SMALL OUTLINE PACKAGE TYPE I (0813.4F)32 PIN THIN SMALL OUTLINE PACKAGE TYPE I (0813.4R)+0.10。