UNR1211资料

Input voltage VIN (V)
Output current IO (mA)
SJH00003BED
3
元器件交易网
UNR121x Series
Characteristics charts of UNR1211 IC VCE
IB = 1.0 mA 0.9 mA 0.8 mA Ta = 25°C
30
0.3 mA
1 Ta = 75°C 25°C 0.1 −25°C 0.01 0.1
20
10
0
0
1 10 100
0
2
4
6
8
10
12
1
10
100
1 000
Collector-emitter voltage VCE (V)
Collector current IC (mA)
Collector current IC (mA)
元器件交易网
Transistors with built-in Resistor
UNR121x Series (UN121x Series)
Silicon NPN epitaxial planar type
Unit: mm
For digital circuits
(0.4)
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *: Rank classification (UNR1110/1115/1116/1117) Rank hFE Q 160 to 260 R 210 to 340 S 290 to 460
VCE(sat) IC
Collector-emitter saturation voltage VCE(sat) (V)
100 IC / IB = 10
hFE IC
400 VCE = 10 V
160
Collector current IC (mA)
120
0.7 mA 0.6 mA 0.5 mA 0.4 mA
R 0.9 R 0.7
4.5±0.1
■ Features
1
元器件交易网
UNR121x Series
■ Electrical Characteristics Ta = 25°C ± 3°C
Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Collector-base cutoff current (Emitter open) Collector-emitter cutoff current (Base open) Emitter-base UNR1211 Symbol VCBO VCEO ICBO ICEO IEBO Conditions IC = 10 µA, IE = 0 IC = 2 mA, IB = 0 VCB = 50 V, IE = 0 VCE = 50 V, IB = 0 VEB = 6 V, IC = 0 Min 50 50 0.1 0.5 0.5 0.2 0.1 0.01 1.0 1.5 2.0 hFE VCE = 10 V, IC = 5 mA 35 60 80 160 30 20 VCE(sat) VOH VOL IC = 10 mA, IB = 0.3 mA VCC = 5 V, VB = 0.5 V, RL = 1 kΩ VCC = 5 V, VB = 2.5 V, RL = 1 kΩ VCC = 5 V, VB = 3.5 V, RL = 1 kΩ VCC = 5 V, VB = 10 V, RL = 1 kΩ VCC = 5 V, VB = 6 V, RL = 1 kΩ fT R1 VCB = 10 V, IE = −2 mA, f = 200 MHz −30% 80 10 22 47 4.7 0.51 1 R1/R2 0.8 0.17 0.08 1.0 0.21 0.1 4.7 2.14 0.47 2.13 1.2 0.25 0.12 +30% MHz kΩ 4.9 0.2 0.25 V V V 460 Typ Max Unit V V µA µA mA
1
0 0.1
1
10
100
1 0.4
0.6
0.8
1.0
1.2
1.4
0.01 0.1
1
10
100
Collector-base voltage VCB (V)
VO = 0.2 V Ta = 25°C
5
Output current IO (µA)
4
3
102
Input voltage VIN (V)
103
10
1
2
10
0.1
1
0 0.1
1
10
100
1 0.4
0.6
0.8
1.0
1.2
1.4
0.01 0.1
1
10
100
Collector-base voltage VCB (V)
cutoff current UNR1212/1214/121D/121E (Collector open) UNR1213 UNR1210/1215/1216/1217 UNR121F/121K UNR1219 UNR1218/121L Forward current UNR1211 transfer ratio UNR1212/121E UNR1213/1214 UNR1210 */1215 */1216 */ 1217 * UNR1219/121D/121F UNR1218/121K/121L Collector-emitter saturation voltage Output voltage high-level Output voltage low-level UNR1213/121K UNR121D UNR121E Transition frequency Input resistance UNR1211/1214/1215/121K UNR1212/1217 UNR1210/1213/121D/121E UNR1216/121F/121L UNR1218 UNR1219 Resistance ratio UNR1211/1212/1213/121L UNR1214 UNR1218/1219 UNR121D UNR121E UNR121F UNR121K
6 f = 1 MHz IE = 0 Ta = 25°C
IO VIN
104 VO = 5 V Ta = 25°C
100
VIN IO
VO = 0.2 V Ta = 25°C
5
Output current IO (µA)
4
Input voltage VIN (V)
103
10
3
102
1
2
10
0.1
(R2) 10 kΩ 22 kΩ 47 kΩ 47 kΩ 5.1 kΩ 10 kΩ 10 kΩ 22 kΩ 10 kΩ 4.7 kΩ 4.7 kΩ
3 (2.5)
2 (2.5)
1
1.25±0.05
■ Resistance by Part Number
(0.85) 0.55±0.1
0.45±0.05
100
1 000
Collector-emitter voltage VCE (V)
Collector current IC (mA)
lector current IC (mA)
Cob VCB
Collector output capacitance C (pF) (Common base, input open circuited) ob
10
Forward current transfer ratio hFE
300
Ta = 75°C
80
0.3 mA
1 25°C 0.1 −25˚C
200 25°C 100 −25°C
0.2 mA 40
Ta = 75°C
0.1 mA 0 0 2 4 6 8 10 12
0.01 0.1
1
10
100
0
1
10
2
SJH00003BED
元器件交易网
UNR121x Series
Common characteristics chart PT Ta
500
Total power dissipation PT (mW)
400
300
200
100
0
0
40
80
120
160
Ambient temperature Ta (°C)
400 VCE = 10 V
IC / IB = 10
50
Forward current transfer ratio hFE
Collector current IC (mA)
10
300 Ta = 75°C 25°C 200 −25°C 100
40 0.4 mA 0.5 mA 0.6 mA 0.7 mA 0.1 mA
Cob VCB
Collector output capacitance C (pF) (Common base, input open circuited) ob
6 f = 1 MHz IE = 0 Ta = 25°C
IO VIN
104 VO = 5 V Ta = 25°C
100
VIN IO
1: Base 2: Collector 3: Emitter M-A1 Package
Internal Connection
R1 B R2 E C
■ Absolute Maximum Ratings Ta = 25°C
Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Collector current Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO IC PT Tj Tstg Rating 50 50 100 400 150 −55 to +150 Unit V V mA mW °C °C
6.9±0.1 (1.5) (1.5)
3.5±0.1
2.5±0.1 (1.0)
(1.0) 2.0±0.2 2.4±0.2
1.0±0.1
• • • • • • • • • • • • • • •
UNR1210 UNR1211 UNR1212 UNR1213 UNR1214 UNR1215 UNR1216 UNR1217 UNR1218 UNR1219 UNR121D UNR121E UNR121F UNR121K UNR121L
(UN1210) (UN1211) (UN1212) (UN1213) (UN1214) (UN1215) (UN1216) (UN1217) (UN1218) (UN1219) (UN121D) (UN121E) (UN121F) (UN121K) (UN121L)
(R1) 47 kΩ 10 kΩ 22 kΩ 47 kΩ 10 kΩ 10 kΩ 4.7 kΩ 22 kΩ 0.51 kΩ 1 kΩ 47 kΩ 47 kΩ 4.7 kΩ 10 kΩ 4.7 kΩ
Characteristics charts of UNR1210 IC VCE
Collector-emitter saturation voltage VCE(sat) (V)
60 IB = 1.0 mA 0.9 mA 0.8 mA Ta = 25°C
VCE(sat) IC
100
hFE IC
Note) The part numbers in the parenthesis show conventional part number.
Publication date: October 2003 SJH00003BED
4.1±0.2
• Costs can be reduced through downsizing of the equipment and reduction of the number of parts • M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board