ZMM6.8中文资料

合集下载

全国教师管理信息系统

全国教师管理信息系统

全国教师管理信息系统填报指南人事处2016年11月1日目录一、总体说明: (1)二、信息采集流程 (1)三、系统条件基本要求 (2)四、信息指标 (3)五、基本信息 (3)六、相关指标补充说明 (4)6.1基本信息表(★) (4)6.2学习经历(★)(多条记录) (6)6.3工作经历(★)(多条记录) (7)6.4岗位聘任(★)(多条记录) (7)6.5专业技术职务聘任(★)(多条记录) (9)6.6教师资格(★)(多条记录) (9)6.7教育教学(★)(多条记录) (9)6.8教科研成果及获奖(★)(多条记录) (9)6.8.1项目(课题)(★)(多条记录) (10)6.8.2著作(★)(多条记录) (11)6.8.3论文(多条记录) (11)6.8.4奖励(★)(多条记录) (11)6.8.5文艺作品(★)(多条记录) (12)6.8.6专利或软件著作权(★)(多条记录) (12)6.8.7咨询报告或研究报告(多条记录) (12)6.8.8国家医药证书 (12)6.8.9国家标准或行业标准(多条记录) (13)6.8.10指导学生参加竞赛获奖(多条记录) (13)6.9入选人才项目(★)(多条记录) (13)6.10国内培训(多条记录) (13)6.11海外研修(访学)(★)(多条记录) (14)6.12技能及证书(★)(多条记录) (15)6.13联系方式(★) (15)一、总体说明:为进一步推进教育管理信息化,加快建设教育管理公共服务平台,教育部决定启动全国教师管理信息系统,建立覆盖全国各级各类教职工的基础数据库和管理信息系统,实现教职工“一人一号”,为每一名教职工建立电子档案。

请各教职工如实填写、实事求是。

所录入数据将被教育部、省教育厅作为了解全省教职工个人发展情况的重要依据,以便将来在系统现有基础上开发更多的功能,比如职称评审材料审核、岗位聘用情况查询、培训名额分配等等。

1、标注星号的项目为教育部及省教育厅要求必填项目。

ZPD6.2中文资料

ZPD6.2中文资料

ZPD1 THRU ZPD75ELECTRICAL CHARACTERISTICS Ratings at 25°C ambient temperature unless otherwise specified.Type Zener Voltage(1)atI Z= 5 mAV Z(V)atI Z= 5 mAf = 1 kHzr zj(Ω)atI Z= 1 mAf = 1 kHzr zj(Ω)Temp. Coeff.of Zener VoltageatI Z= 5 mAαvz(10–4/K)ReverseVoltageatI R= 100 nAV R(V)atT amb= 45°CI Z(mA)atT amb= 25°CI Z(mA)Dynamic Resistance AdmissibleZener current(2)ZPD1(3)0.7 ... 0.8 6.5 (< 8)< 50–26 ... –23–280340 ZPD2.7 2.5 ... 2.975 (< 83)< 500–9 ... –4–135160 ZPD3 2.8 ... 3.280 (< 95)< 500–9 ... –3–117140 ZPD3.3 3.1 ... 3.580 (< 95)< 500–8 ... –3–109130 ZPD3.6 3.4 ... 3.880 (< 95)< 500–8 ... –3–101120 ZPD3.9 3.7 ... 4.180 (< 95)< 500–7 ... –3–92110 ZPD4.3 4.0 ... 4.680 (< 95)< 500–6 ... –1–85100 ZPD4.7 4.4 ... 5.070 (< 78)< 500–5 ... +2–7690 ZPD5.1 4.8 ... 5.430 (< 60)< 480–3 ... +4> 0.86780 ZPD5.6 5.2 ... 6.010 (< 40)< 400–2 ... +6> 15970 ZPD6.2 5.8 ... 6.6 4.8 (< 10)< 200–1 ... +7> 25464 ZPD6.8 6.4 ... 7.2 4.5 (< 8)< 150+2 ... +7> 34958 ZPD7.57.0 ... 7.9 4 (< 7)< 50+3 ... +7> 54453 ZPD8.27.7 ... 8.7 4.5 (< 7)< 50+4 ... +7> 64047 ZPD9.18.5 ... 9.6 4.8 (< 10)< 50+5 ... +8> 73643 ZPD109.4 ... 10.6 5.2 (< 15)< 70+5 ... +8> 7.53340 ZPD1110.4 ... 11.6 6 (< 20)< 70+5 ... +9> 8.53036 ZPD1211.4 ... 12.77 (< 20)< 90+6 ... +9> 92832 ZPD1312.4 ... 14.19 (< 25)< 110+7 ... +9> 102529 ZPD1513.8 ... 15.611 (< 30)< 110+7 ... +9> 112327 ZPD1615.3 ... 17.113 (< 40)< 170+8 ... +9.5> 122024 ZPD1816.8 ... 19.118 (< 50)< 170+8 ... +9.5> 141821 ZPD2018.8 ... 21.220 (< 50)< 220+8 ... +10> 151720 ZPD2220.8 ... 23.325 (< 55)< 220+8 ... +10> 171618 ZPD2422.8 ... 25.628 (< 80)< 220+8 ... +10> 181316 ZPD2725.1 ... 28.930 (< 80)< 250+8 ... +10> 201214 ZPD3028 ... 3235 (< 80)< 250+8 ... +10> 22.51013 ZPD3331 ... 3540 (< 80)< 250+8 ... +10> 25912 ZPD3634 ... 3840 (< 90)< 250+8 ... +10> 27911 ZPD3937 ... 4150 (< 90)< 300+10 ... +12> 29810 ZPD4340 ... 4660 (< 100)< 700+10 ... +12> 3279.2 ZPD4744 ... 5070 (< 100)< 750+10 ... +12> 3568.5 ZPD5148 ... 5470 (< 100)< 750+10 ... +12> 3867.8 ZPD5652.0 … 60.0(4)< 135(4)< 1000(5)typ. +10(4)–––ZPD6258.0 … 66.0(4)< 150(4)< 1000(5)typ. +10(4)–––ZPD6864.0 … 72.0(4)< 200(4)< 1000(5)typ. +10(4)–––ZPD7570.0 … 79.0(4)< 250(4)< 1500(5)typ. +10(4)–––NOTES:(1) Tested with pulses t p= 5 ms(2) Valid provided that leads at a distance of 4 mm from case are kept at ambient temperature(3) The ZPD1 is a silicon diode operated in forward direction. Hence, the subscript of all parameters should be “F” instead of “Z”.Connect the cathode terminal to the negative pole(4) at I Z= 2.5 mA(5) at I Z= 0.5 mA。

ZPD3.3中文资料

ZPD3.3中文资料

ZPD1 THRU ZPD75ELECTRICAL CHARACTERISTICS Ratings at 25°C ambient temperature unless otherwise specified.Type Zener Voltage(1)atI Z= 5 mAV Z(V)atI Z= 5 mAf = 1 kHzr zj(Ω)atI Z= 1 mAf = 1 kHzr zj(Ω)Temp. Coeff.of Zener VoltageatI Z= 5 mAαvz(10–4/K)ReverseVoltageatI R= 100 nAV R(V)atT amb= 45°CI Z(mA)atT amb= 25°CI Z(mA)Dynamic Resistance AdmissibleZener current(2)ZPD1(3)0.7 ... 0.8 6.5 (< 8)< 50–26 ... –23–280340 ZPD2.7 2.5 ... 2.975 (< 83)< 500–9 ... –4–135160 ZPD3 2.8 ... 3.280 (< 95)< 500–9 ... –3–117140 ZPD3.3 3.1 ... 3.580 (< 95)< 500–8 ... –3–109130 ZPD3.6 3.4 ... 3.880 (< 95)< 500–8 ... –3–101120 ZPD3.9 3.7 ... 4.180 (< 95)< 500–7 ... –3–92110 ZPD4.3 4.0 ... 4.680 (< 95)< 500–6 ... –1–85100 ZPD4.7 4.4 ... 5.070 (< 78)< 500–5 ... +2–7690 ZPD5.1 4.8 ... 5.430 (< 60)< 480–3 ... +4> 0.86780 ZPD5.6 5.2 ... 6.010 (< 40)< 400–2 ... +6> 15970 ZPD6.2 5.8 ... 6.6 4.8 (< 10)< 200–1 ... +7> 25464 ZPD6.8 6.4 ... 7.2 4.5 (< 8)< 150+2 ... +7> 34958 ZPD7.57.0 ... 7.9 4 (< 7)< 50+3 ... +7> 54453 ZPD8.27.7 ... 8.7 4.5 (< 7)< 50+4 ... +7> 64047 ZPD9.18.5 ... 9.6 4.8 (< 10)< 50+5 ... +8> 73643 ZPD109.4 ... 10.6 5.2 (< 15)< 70+5 ... +8> 7.53340 ZPD1110.4 ... 11.6 6 (< 20)< 70+5 ... +9> 8.53036 ZPD1211.4 ... 12.77 (< 20)< 90+6 ... +9> 92832 ZPD1312.4 ... 14.19 (< 25)< 110+7 ... +9> 102529 ZPD1513.8 ... 15.611 (< 30)< 110+7 ... +9> 112327 ZPD1615.3 ... 17.113 (< 40)< 170+8 ... +9.5> 122024 ZPD1816.8 ... 19.118 (< 50)< 170+8 ... +9.5> 141821 ZPD2018.8 ... 21.220 (< 50)< 220+8 ... +10> 151720 ZPD2220.8 ... 23.325 (< 55)< 220+8 ... +10> 171618 ZPD2422.8 ... 25.628 (< 80)< 220+8 ... +10> 181316 ZPD2725.1 ... 28.930 (< 80)< 250+8 ... +10> 201214 ZPD3028 ... 3235 (< 80)< 250+8 ... +10> 22.51013 ZPD3331 ... 3540 (< 80)< 250+8 ... +10> 25912 ZPD3634 ... 3840 (< 90)< 250+8 ... +10> 27911 ZPD3937 ... 4150 (< 90)< 300+10 ... +12> 29810 ZPD4340 ... 4660 (< 100)< 700+10 ... +12> 3279.2 ZPD4744 ... 5070 (< 100)< 750+10 ... +12> 3568.5 ZPD5148 ... 5470 (< 100)< 750+10 ... +12> 3867.8 ZPD5652.0 … 60.0(4)< 135(4)< 1000(5)typ. +10(4)–––ZPD6258.0 … 66.0(4)< 150(4)< 1000(5)typ. +10(4)–––ZPD6864.0 … 72.0(4)< 200(4)< 1000(5)typ. +10(4)–––ZPD7570.0 … 79.0(4)< 250(4)< 1500(5)typ. +10(4)–––NOTES:(1) Tested with pulses t p= 5 ms(2) Valid provided that leads at a distance of 4 mm from case are kept at ambient temperature(3) The ZPD1 is a silicon diode operated in forward direction. Hence, the subscript of all parameters should be “F” instead of “Z”.Connect the cathode terminal to the negative pole(4) at I Z= 2.5 mA(5) at I Z= 0.5 mA。

ZMM5V1中文资料(Shenzhen Jin)中文数据手册「EasyDatasheet - 矽搜」

ZMM5V1中文资料(Shenzhen Jin)中文数据手册「EasyDatasheet - 矽搜」

60
70
80
90
100 V
Vz
正向特性
mA 10
10 i
10
1
10
10
10
10 10
0
ZMM...
Tj=100 C Tj=25 C
0.2
0.4
0.6
0.8
1V
V
容许功耗 随环境温度 Valid provided that electrodes are kept at ambient temperature.
1
ZMM 2V2
2.2
5
2.08...2.33
1
ZMM 2V4
2.4
5
2.28...2.56
1
ZMM 2V7
2.7
5
2.5...2.9
1
ZMM 3V0
3.0
5
2.8...3.2
1
ZMM 3V3
3.3
5
3.1...3.5
1
ZMM 3V6
3.6
5
3.4...3.8
1
ZMM 3V9
3.9
5
3.7...4.1
Capacitance versus Zener voltage
Dynamic resistance versus Zener current
75
2.5
70...79
0.5
ZMM 82
82
2.5
77...87
0.25
ZMM 91
91
1
85...96
0.1
ZMM 100
100
1
94...106
0.1
ZMM 110

multisim 介绍

multisim 介绍

子仿真软件“Mumsim8.3.30特殊版”的元件库中把元件分门别类地分成13个类别,每个类别中又有许多种具体的元器件,为便于读者在创建仿真电路时寻找元器件,现将电子仿真软件“Mumsim8.3.30特殊版”元件库和元器件的中文译意整理如下,供读者参考。

电子仿真软件Mumsim8.3.30特殊版的元件工具条如图1所示。

图11.点击“放置信号源”按钮,弹出对话框中的“系列”栏如图2所示。

图2(1). 选中“电源(POWER_SOURCES)”,其“元件”栏下内容如图3所示:图3如图4所示:图4(3). 选中“信号电流源(SIGNAL_CURRENT_SOURCES)”,其“元件”栏下内容如图5所示:图5(4). 选中“控制函数块(CONTROL_FUNCTION_BLOCKS)”,其“元件”栏下内容如图6所示:图6内容如图7所示:图7(6). 选中“电流控源(CONTROLLED_CURRENT_SOURCES)”,其“元件”栏下内容如图8所示:图82. 点击“放置模拟元件”按钮,弹出对话框中“系列”栏如图9 所示。

图9(1). 选中“模拟虚拟元件(ANALOG_VIRTUAL)”,其“元件”栏中仅有虚拟比较器、三端虚拟运放和五端虚拟运放3个品种可供调用。

(2). 选中“运算放大器(OPAMP)”。

其“元件”栏中包括了国外许多公司提供的多达4243种各种规格运放可供调用。

(3). 选中“诺顿运算放大器(OPAMP_NORTON)”,其“元件”栏中有16种规格诺顿运放可供调用。

(4). 选中“比较器(COMPARATOR)”,其“元件”栏中有341种规格比较器可供调用。

(5). 选中“宽带运放(WIDEBAND_AMPS)”其“元件”栏中有144种规格宽带运放可供调用,宽带运放典型值达100MHz,主要用于视频放大电路。

(6). 选中“特殊功能运放(SPECIAL_FUNCTION)”,其“元件”栏中有165种规格特殊功能运放可供调用,主要包括测试运放、视频运放、乘法器/除法器、前置放大器和有源滤波器等。

ZMM4V7中文资料

ZMM4V7中文资料
元器件交易网
ZMM2V4 - ZMM75
500mW SURFACE MOUNT ZENER DIODE Features
· · · · Planar Die Construction Sealed Glass Case Ideally Suited for Automated Insertion 2.4V - 75V Nominal Zener Voltages
Notes:
1. Tested with pulses tp = 20 ms. 2. Valid provided that electrodes are kept at ambient temperature.
NOT FOR NEW DESIGN, USE BZT52C2V4 - BZT52C51
DS18005 Rev. H-3
2 of 3
ZMM2V4-ZMM75
元器件交易网
100
50
Ptot = 500mW TA = 25°C
Ptot = 500mw TA = 25°C
IZ, ZENER CURRENT (mA)
80
40
60
IZ, ZENER CURRENT (mA)
30 25 20 VZ, ZENER VOLTAGE (V) Fig. 8, Zener Current vs Zener Voltage
Tj = 25°C
35
500
Pd, POWER DISSIPATION (mW)
400 300 200 100 0
100
IZ = 1mA
5mA
10
10mA
0
40
80
VR = 2V Tj = 25°C
5

Xara3D6.0教程

Xara3D6.0教程

Xara3D6.0教程Xara3D 6.0教程(1)一、Xara3D 6.0软件特点老牌的 3D 文字动画制作工具,和友丽的 Cool3D 享有同样的美誉。

界面简洁,功能却十分强大,只需要短短的几分钟就可以做出很棒的专业动态3D 文字,即使新手也可以很快入门,你甚至不需要学习,就可以创作出用于你的网页的高品质的3D 文字标题,所有的图片全都具有光滑平整的专业品质,它也可以创建高品质的动画GIF 和AVI。

最新版本增加了大量动画和字体风格,支持风格设置导入,并且还可以导出为静态图片、动画GIF、Flash 动画甚至屏幕保护。

更强的功能需要你自己来发现。

二、 Xara3D v6.0软件下载及安装方法1、下载地址及解压Xara3D v6.0简体中文完整版下载地址:( /soft/html/16045.htmlXara3D v6.0简体中文汉化完整版注册码:X3D-9101-2462-1422 )下载完成后(软件大小22.62MB,但下载速度可能有时比较慢),双击你下载的“Xara3D v6.0 Full Edition 简体中文汉化完整版”文件,先解压缩后生成下图所示包含6的个文件的文件包。

再双击“SETUP”文件,里面有下列图示两个文件,右边的蓝色3D字样即为该软件的EXE安装文件,左边的“HH”为汉化补丁文件。

2、安装方法:先安装Xara3D v6.0英文版,选择好路径(建议不要安装在C系统盘,以免重新安装系统后不带来不便!),比如安装你的计算机D:\Program File \Xara\Xara3D6下,接着安装汉化补丁,注意汉化补丁要安装在与英文版同一路径下(见上),这样启动软件后,界面就自动变成中文版了。

3、注册:按照上述步骤安装全部完成后,自动弹出一个需要填写注册码的窗口(见下图),把下列注册码复制进去,然后点“Run Xara3D”按钮,即可进入Xara3D v6.0立体字制作软件了。

Xara3D v6.0简体中文汉化完整版注册码:X3D-9101-2462-1422三、Xara3D v6.0立体字制作方法进入后Xara3D v6.0,可以很方便的制作自己喜欢的3D动态立体字,鼠标停在左边一列主按钮,可以看到各自的功能。

ZDM软件用户手册

ZDM软件用户手册

第1页简介这是一个由工程设计人员,在 AutoCAD 平台 R14 、2002 2004 2005 2006 版本上开发出来的工具型辅助设计软件。

内容涉及:建筑、土建结构、水工、机、 电、5 大专业。

软件的架构为:通用扩展功能+专业通用功能+专业功能,是一个 介于 AutoCAD 软件与在其平台上开发出来的各种系统软件之间的类似二次平台软 件,软件采用分布工具集方式,各种功能均以工具方式出现,独立运行,力求将 其通用性、灵活性、推至最高,力求在通用性、灵活性、与软件自动化程度之间 找到最佳平衡点。

力求解决工程设计中常见的绘图、统计一类的难题。

如果你没 有专业的系统软件,而只能在 AutoCAD 上一笔一笔的画图,你不妨用用这个软件, 各种工具俯首可得, 运用之妙,存乎一心。

你使用起来一定会有进退有致,左右 逢源的感觉。

经过工程的测试,如果你只使用该软件的通用功能部分,综合效率 可提高 20%-30%,如果你使用它的通用专业部分,综合效率可提高 50%以上。

如 果你使用它的专业特殊部分,综合效率可提高 10 倍以上。

对于小型设计部门该 软件为各专业都提供了 CAD 专业绘图的全套解决方案。

按 AutoCAD 版本划分,该软件分为 zdm14(for AutoCAD R14),zdm2000(for AutoCAD 2000-2002) zdm2004(for AutoCAD 2004) zdm2005(for AutoCAD 2005) zdm2005(for AutoCAD 2006)。

软件由以下模块组成:1、 AutoCAD 绘制、编辑、计算统计、表格、文字处理扩展功能及工程常 用图形绘制。

2、 建筑、规划软件包(建筑平面图绘制,写坐标、自动生成坐标表)。

3、 钢筋图软件包(钢筋绘制、标注、统计;自动生成钢筋表,材料表;钢筋图、表关联修改)。

4、 电气软件包(常用电气接线图、设备绘制)。

5、 管道软件包(管道单、双线图、管道附件绘制、材料入表)。

EMZ6.8E中文资料

EMZ6.8E中文资料

The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.

ZMM62中文资料

ZMM62中文资料

FEATURES♦Silicon Planar Zener Diodes♦In Mini-MELF case especially for automatic insertion.♦The Zener voltages are graded according to the international E 24 standard. Smaller voltagetolerances and other Zener voltages are available upon request.♦These diodes are also available in DO-35 case with the type designation ZPD1 … ZPD51.MECHANICAL DATACase:Mini-MELF Glass Case (SOD-80)Weight:approx. 0.05 gMAXIMUM RATINGSRatings at 25°C ambient temperature unless otherwise specified.SYMBOL VALUE UNITZener Current (see Table “Characteristics”)Power Dissipation at T amb = 25°C P tot 500(1)mW Junction Temperature T j 175°C Storage Temperature RangeT S– 55 to +175°CZENER DIODES.142 (3.6).019 (0.48)∅Cathode Mark.063 (1.6).134 (3.4).055 (1.4).011 (0.28)Dimensions are in inches and (millimeters)ZMM1(3)0.7 ... 0.8 6.5 (< 8)< 50– 26 ... – 23–280340ZMM2.7 2.5 ... 2.975 (< 83)< 500– 9 ... – 4–135160ZMM3 2.8 ... 3.280 (< 95)< 500– 9 ... – 3–117140ZMM3.3 3.1 ... 3.580 (< 95)< 500– 8 ... – 3–109130ZMM3.6 3.4 ... 3.880 (< 95)< 500– 8 ... – 3–101120ZMM3.9 3.7 ... 4.180 (< 95)< 500– 7 ... – 3–92110ZMM4.3 4.0 ... 4.680 (< 95)< 500– 6 ... – 1–85100ZMM4.7 4.4 ... 5.070 (< 78)< 500– 5 ... +2–7690ZMM5.1 4.8 ... 5.430 (< 60)< 480– 3 ... +4> 0.86780ZMM5.6 5.2 ... 6.010 (< 40)< 400– 2 ... +6> 15970ZMM6.2 5.8 ... 6.6 4.8 (< 10)< 200– 1 ... +7> 25464ZMM6.8 6.4 ... 7.2 4.5 (< 8)< 150+2 ... +7> 34958ZMM7.57.0 ... 7.9 4 (< 7)< 50+3 ... +7> 54453ZMM8.27.7 ... 8.7 4.5 (< 7)< 50+4 ... +7> 64047ZMM9.18.5 ... 9.6 4.8 (< 10)< 50+5 ... +8> 73643ZMM109.4 ... 10.6 5.2 (< 15)< 70+5 ... +8> 7.53340ZMM1110.4 ... 11.6 6 (< 20)< 70+5 ... +9> 8.53036ZMM1211.4 ... 12.77 (< 20)< 90+6 ... +9> 92832ZMM1312.4 ... 14.19 (< 25)< 110+7 ... +9> 102529ZMM1513.8 ... 15.611 (< 30)< 110+7 ... +9> 112327ZMM1615.3 ... 17.113 (< 40)< 170+8 ... +9.5> 122024ZMM1816.8 ... 19.118 (< 50)< 170+8 ... +9.5> 141821ZMM2018.8 ... 21.220 (< 50)< 220+8 ... +10> 151720ZMM2220.8 ... 23.325 (< 55)< 220+8 ... +10> 171618ZMM2422.8 ... 25.628 (< 80)< 220+8 ... +10> 181316ZMM2725.1 ... 28.930 (< 80)< 250+8 ... +10> 201214ZMM3028 ... 3235 (< 80)< 250+8 ... +10> 22.51013ZMM3331 ... 3540 (< 80)< 250+8 ... +10> 25912ZMM3634 ... 3840 (< 90)< 250+8 ... +10> 27911ZMM3937 ... 4150 (< 90)< 300+10 ... +12> 29810ZMM4340 ... 4660 (< 100)< 700+10 ... +12> 3279.2ZMM4744 ... 5070 (< 100)< 750+10 ... +12> 3568.5ZMM5148 (54)70 (< 100)< 750+10 ... +12> 3867.8ZMM5652.0 … 60.0(4)<135(4)<1000(5)typ. +10(4)–––ZMM6258.0 … 66.0(4)<150(4)<1000(5)typ. +10(4)–––ZMM6864.0 … 72.0(4)<200(4)<1000(5)typ. +10(4)–––ZMM7570.0 … 79.0(4)<250(4)<1500(5)typ. +10(4)–––NOTES:(1) Tested with pulses t p = 5 ms(2) Valid provided that electrodes are kept at ambient temperature(3) The ZMM1 is a silicon diode operated in forward direction. Hence, the index of all parameters should be “F” instead of “Z”Connect the cathode electrode to the negative pole (4) at I Z = 2.5 mA (5) at I Z = 0.5 mAELECTRICAL CHARACTERISTICSRatings at 25°C ambient temperature unless otherwise specified.TypeZener Voltage (1)at I Z = 5 mAV Z Vat I Z = 5 mA f = 1 kHz r zj Ωat I Z = 1 mA f = 1 kHz r zj ΩTemp. Coeff.of Zener Voltageat I Z = 5 mA αVZ 10–4/K Reverse Voltage atI R = 100 nAV R V atT amb = 45°C I Z = mA Admissable Zener current (2)atT amb = 25°C I Z = mA Dynamic Resistance。

ZMM3中文资料

ZMM3中文资料

FEATURES♦Silicon Planar Zener Diodes♦In Mini-MELF case especially for automatic insertion.♦The Zener voltages are graded according to the international E 24 standard. Smaller voltagetolerances and other Zener voltages are available upon request.♦These diodes are also available in DO-35 case with the type designation ZPD1 … ZPD51.MECHANICAL DATACase:Mini-MELF Glass Case (SOD-80)Weight:approx. 0.05 gMAXIMUM RATINGSRatings at 25°C ambient temperature unless otherwise specified.SYMBOL VALUE UNITZener Current (see Table “Characteristics”)Power Dissipation at T amb = 25°C P tot 500(1)mW Junction Temperature T j 175°C Storage Temperature RangeT S– 55 to +175°CZENER DIODES.142 (3.6).019 (0.48)∅Cathode Mark.063 (1.6).134 (3.4).055 (1.4).011 (0.28)Dimensions are in inches and (millimeters)ZMM1(3)0.7 ... 0.8 6.5 (< 8)< 50– 26 ... – 23–280340ZMM2.7 2.5 ... 2.975 (< 83)< 500– 9 ... – 4–135160ZMM3 2.8 ... 3.280 (< 95)< 500– 9 ... – 3–117140ZMM3.3 3.1 ... 3.580 (< 95)< 500– 8 ... – 3–109130ZMM3.6 3.4 ... 3.880 (< 95)< 500– 8 ... – 3–101120ZMM3.9 3.7 ... 4.180 (< 95)< 500– 7 ... – 3–92110ZMM4.3 4.0 ... 4.680 (< 95)< 500– 6 ... – 1–85100ZMM4.7 4.4 ... 5.070 (< 78)< 500– 5 ... +2–7690ZMM5.1 4.8 ... 5.430 (< 60)< 480– 3 ... +4> 0.86780ZMM5.6 5.2 ... 6.010 (< 40)< 400– 2 ... +6> 15970ZMM6.2 5.8 ... 6.6 4.8 (< 10)< 200– 1 ... +7> 25464ZMM6.8 6.4 ... 7.2 4.5 (< 8)< 150+2 ... +7> 34958ZMM7.57.0 ... 7.9 4 (< 7)< 50+3 ... +7> 54453ZMM8.27.7 ... 8.7 4.5 (< 7)< 50+4 ... +7> 64047ZMM9.18.5 ... 9.6 4.8 (< 10)< 50+5 ... +8> 73643ZMM109.4 ... 10.6 5.2 (< 15)< 70+5 ... +8> 7.53340ZMM1110.4 ... 11.6 6 (< 20)< 70+5 ... +9> 8.53036ZMM1211.4 ... 12.77 (< 20)< 90+6 ... +9> 92832ZMM1312.4 ... 14.19 (< 25)< 110+7 ... +9> 102529ZMM1513.8 ... 15.611 (< 30)< 110+7 ... +9> 112327ZMM1615.3 ... 17.113 (< 40)< 170+8 ... +9.5> 122024ZMM1816.8 ... 19.118 (< 50)< 170+8 ... +9.5> 141821ZMM2018.8 ... 21.220 (< 50)< 220+8 ... +10> 151720ZMM2220.8 ... 23.325 (< 55)< 220+8 ... +10> 171618ZMM2422.8 ... 25.628 (< 80)< 220+8 ... +10> 181316ZMM2725.1 ... 28.930 (< 80)< 250+8 ... +10> 201214ZMM3028 ... 3235 (< 80)< 250+8 ... +10> 22.51013ZMM3331 ... 3540 (< 80)< 250+8 ... +10> 25912ZMM3634 ... 3840 (< 90)< 250+8 ... +10> 27911ZMM3937 ... 4150 (< 90)< 300+10 ... +12> 29810ZMM4340 ... 4660 (< 100)< 700+10 ... +12> 3279.2ZMM4744 ... 5070 (< 100)< 750+10 ... +12> 3568.5ZMM5148 (54)70 (< 100)< 750+10 ... +12> 3867.8ZMM5652.0 … 60.0(4)<135(4)<1000(5)typ. +10(4)–––ZMM6258.0 … 66.0(4)<150(4)<1000(5)typ. +10(4)–––ZMM6864.0 … 72.0(4)<200(4)<1000(5)typ. +10(4)–––ZMM7570.0 … 79.0(4)<250(4)<1500(5)typ. +10(4)–––NOTES:(1) Tested with pulses t p = 5 ms(2) Valid provided that electrodes are kept at ambient temperature(3) The ZMM1 is a silicon diode operated in forward direction. Hence, the index of all parameters should be “F” instead of “Z”Connect the cathode electrode to the negative pole (4) at I Z = 2.5 mA (5) at I Z = 0.5 mAELECTRICAL CHARACTERISTICSRatings at 25°C ambient temperature unless otherwise specified.TypeZener Voltage (1)at I Z = 5 mAV Z Vat I Z = 5 mA f = 1 kHz r zj Ωat I Z = 1 mA f = 1 kHz r zj ΩTemp. Coeff.of Zener Voltageat I Z = 5 mA αVZ 10–4/K Reverse Voltage atI R = 100 nAV R V atT amb = 45°C I Z = mA Admissable Zener current (2)atT amb = 25°C I Z = mA Dynamic Resistance。

ZMM16中文资料

ZMM16中文资料

FEATURES♦Silicon Planar Zener Diodes♦In Mini-MELF case especially for automatic insertion.♦The Zener voltages are graded according to the international E 24 standard. Smaller voltagetolerances and other Zener voltages are available upon request.♦These diodes are also available in DO-35 case with the type designation ZPD1 … ZPD51.MECHANICAL DATACase:Mini-MELF Glass Case (SOD-80)Weight:approx. 0.05 gMAXIMUM RATINGSRatings at 25°C ambient temperature unless otherwise specified.SYMBOL VALUE UNITZener Current (see Table “Characteristics”)Power Dissipation at T amb = 25°C P tot 500(1)mW Junction Temperature T j 175°C Storage Temperature RangeT S– 55 to +175°CZENER DIODES.142 (3.6).019 (0.48)∅Cathode Mark.063 (1.6).134 (3.4).055 (1.4).011 (0.28)Dimensions are in inches and (millimeters)ZMM1(3)0.7 ... 0.8 6.5 (< 8)< 50– 26 ... – 23–280340ZMM2.7 2.5 ... 2.975 (< 83)< 500– 9 ... – 4–135160ZMM3 2.8 ... 3.280 (< 95)< 500– 9 ... – 3–117140ZMM3.3 3.1 ... 3.580 (< 95)< 500– 8 ... – 3–109130ZMM3.6 3.4 ... 3.880 (< 95)< 500– 8 ... – 3–101120ZMM3.9 3.7 ... 4.180 (< 95)< 500– 7 ... – 3–92110ZMM4.3 4.0 ... 4.680 (< 95)< 500– 6 ... – 1–85100ZMM4.7 4.4 ... 5.070 (< 78)< 500– 5 ... +2–7690ZMM5.1 4.8 ... 5.430 (< 60)< 480– 3 ... +4> 0.86780ZMM5.6 5.2 ... 6.010 (< 40)< 400– 2 ... +6> 15970ZMM6.2 5.8 ... 6.6 4.8 (< 10)< 200– 1 ... +7> 25464ZMM6.8 6.4 ... 7.2 4.5 (< 8)< 150+2 ... +7> 34958ZMM7.57.0 ... 7.9 4 (< 7)< 50+3 ... +7> 54453ZMM8.27.7 ... 8.7 4.5 (< 7)< 50+4 ... +7> 64047ZMM9.18.5 ... 9.6 4.8 (< 10)< 50+5 ... +8> 73643ZMM109.4 ... 10.6 5.2 (< 15)< 70+5 ... +8> 7.53340ZMM1110.4 ... 11.6 6 (< 20)< 70+5 ... +9> 8.53036ZMM1211.4 ... 12.77 (< 20)< 90+6 ... +9> 92832ZMM1312.4 ... 14.19 (< 25)< 110+7 ... +9> 102529ZMM1513.8 ... 15.611 (< 30)< 110+7 ... +9> 112327ZMM1615.3 ... 17.113 (< 40)< 170+8 ... +9.5> 122024ZMM1816.8 ... 19.118 (< 50)< 170+8 ... +9.5> 141821ZMM2018.8 ... 21.220 (< 50)< 220+8 ... +10> 151720ZMM2220.8 ... 23.325 (< 55)< 220+8 ... +10> 171618ZMM2422.8 ... 25.628 (< 80)< 220+8 ... +10> 181316ZMM2725.1 ... 28.930 (< 80)< 250+8 ... +10> 201214ZMM3028 ... 3235 (< 80)< 250+8 ... +10> 22.51013ZMM3331 ... 3540 (< 80)< 250+8 ... +10> 25912ZMM3634 ... 3840 (< 90)< 250+8 ... +10> 27911ZMM3937 ... 4150 (< 90)< 300+10 ... +12> 29810ZMM4340 ... 4660 (< 100)< 700+10 ... +12> 3279.2ZMM4744 ... 5070 (< 100)< 750+10 ... +12> 3568.5ZMM5148 (54)70 (< 100)< 750+10 ... +12> 3867.8ZMM5652.0 … 60.0(4)<135(4)<1000(5)typ. +10(4)–––ZMM6258.0 … 66.0(4)<150(4)<1000(5)typ. +10(4)–––ZMM6864.0 … 72.0(4)<200(4)<1000(5)typ. +10(4)–––ZMM7570.0 … 79.0(4)<250(4)<1500(5)typ. +10(4)–––NOTES:(1) Tested with pulses t p = 5 ms(2) Valid provided that electrodes are kept at ambient temperature(3) The ZMM1 is a silicon diode operated in forward direction. Hence, the index of all parameters should be “F” instead of “Z”Connect the cathode electrode to the negative pole (4) at I Z = 2.5 mA (5) at I Z = 0.5 mAELECTRICAL CHARACTERISTICSRatings at 25°C ambient temperature unless otherwise specified.TypeZener Voltage (1)at I Z = 5 mAV Z Vat I Z = 5 mA f = 1 kHz r zj Ωat I Z = 1 mA f = 1 kHz r zj ΩTemp. Coeff.of Zener Voltageat I Z = 5 mA αVZ 10–4/K Reverse Voltage atI R = 100 nAV R V atT amb = 45°C I Z = mA Admissable Zener current (2)atT amb = 25°C I Z = mA Dynamic Resistance。

ZMM5V6中文资料

ZMM5V6中文资料
0 4 8 12 16 20
30
40
20
20
10
0
0
VZ, ZENER VOLTAGE (V) Fig. 1, Zener Current vs Zener Voltage
15
600
NOT FOR NEW DESIGN, 1000 USE BZT52C2V4 - BZT52C51
DIFFERENTIAL ZENER IMPEDANCE (W)
VR = 2V Tj = 25°C
5
25
200
Cj, JUNCTION CAPACITANCE (pF)
150
100
50
0
0
5
10
15
20
25
VZ, ZENER VOLTAGE (V) Fig. 5, Junction Capacitance vs Zener Voltage
DS18005 Rev. H-3
Characteristic Forward Voltage @ IF = 200mA Thermal Resistance, Junction to Ambient Air (Note 2) Operating and Storage Temperature Range Notes:
1. Tested with Pulses, tp = 20ms. 2. Valid provided that Electrodes are kept at Ambient Temperature.
DS18005 Rev. H-3
2 of 3
ZMM2V4-ZMM75
元器件交易网
100
50
Ptot = 500mW TA = 25°C

ZMM5250B中文资料(secos)中文数据手册「EasyDatasheet - 矽搜」

ZMM5250B中文资料(secos)中文数据手册「EasyDatasheet - 矽搜」

49
600
58
700
70
700
80
800
93
900
150
1000
典型 温度 系数
%/
-0.085 -0.085 -0.080 -0.080 -0.075 -0.070 -0.065 -0.060 +/-0.055 +/-0.030 +/-0.030 +0.038 +0.038 +0.045 +0.050 +0.058 +0.062 +0.065 +0.068 +0.075 +0.076 +0.077 +0.079 +0.082 +0.082 +0.083 +0.084 +0.085 +0.086 +0.086 +0.087 +0.088 +0.089 +0.090 +0.091 +0.091 +0.092 +0.093 +0.094 +0.095 +0.095
30
V
ZMMZM52MZ2M542MZ2M582MZ2M592MZ3M502MZ3M512MZ3M522MZ3M542MZ3M552MZ3M592M4512Z4M2M5245 ZMM5250 ZMM5252
Unit K /毫瓦
V
VZ
机械数据
Items

Case
铅完成
在功耗因环境温度变化.
500 pd (mW) 400
Min.
Typ. Max.
热阻Junctiobn到环境空气
R JA

ZMM5252B中文资料(WILLAS ELECTRONIC)中文数据手册「EasyDatasheet - 矽搜」

ZMM5252B中文资料(WILLAS ELECTRONIC)中文数据手册「EasyDatasheet - 矽搜」

5264
ZMM5265B
62.0
58.90
65.10
185
2.0
1400
0.25
0.1
47.0
5265
ZMM5266B
68.0
64.60
71.40
230
1.8
1600
0.25
0.1
52.0
5266
ZMM5267B
75.0
71.25
78.75
270
1.7
1700
0.25
0.1
56.0
5267
1)基于直流测量达到热平衡;引线长度=9.5毫米(3/8");散热器= 30K / W热阻
5244
ZMM5245B
15.0
14.25
15.75
16
8.5
600
0.25
0.1
11.0
5245
ZMM5246B
16.0
15.20
16.80
17
7.8
600
0.25
0.1
12.0
5246
ZMM5247B
17.0
16.15
17.85
19
7.4
600
0.25
0.1
13.0
5247
ZMM5248B
18.0
类型
max. .006 (0.15)
符号
PTOT IZ Tj Tstg

500
PV/V Z -65到+175 –65 至 +175
单元
mW
mA °C °C
.010 (0.25) min.
Marking Code: 测JV o试r 4条件

UMZ6.8ENTR;中文规格书,Datasheet资料

UMZ6.8ENTR;中文规格书,Datasheet资料

Zener diodeUMZ6.8ENz Application z Lead size figure (Unit : mm)Voltage regulation(Anode common twin type)z Features1) Small mold type. (UMD5)2) High reliability.z StructureSilicon epitaxial planerz Structurez Absolute maximum ratings (Ta=25°C)SymbolUnit P mW Tj °C Tstg °Cz Electrical characteristics (Ta=25°C)SymbolMin.Typ.Max.Unit ConditionsV Z 6.47-7.14V I Z =5mA I R --0.50µA V R =3.5V Z Z--40ΩI Z =5mADynamic impedance (*1) Total of 2 elementsZener voltage Reverse current Parameter Parameter Limits Power dissipation (*1)200Junction temperature 150Storage temperature -55 to +150UMZ6.8ENz Electrical characteristics curves11010010000.0010.11010001101000.11101515.51616.51717.51818.51919.52000.020.040.060.080.10.120.140.160.180.20.000010.00010.0010.010.1110100012340.010.111066.577.586.76.86.977.17.2REVERSE VOLTAGE : V R (V)V R -I R CHARACTERISTICSR E V E R S E C U R R E N T :I R (n A )R E V E R S E C U R R E N T :I R (n A )I R DISRESION MAPC A P A C I T A N C E B E T W E E N T E R M I N A L S :C t (p F )REVERSE VOLTAGE : V R (V)V R -Ct CHARACTERISTICSCt DISRESION MAPC A P A C I T A N C E B E T W E E N T E R M I N A L S :C t (p F )Z E N E R C U R R E N T :I z (m A )ZENER VOLTAGE : Vz(V)Vz-Iz CHARACTERISTICSVz DISRESION MAPZ E N E R V O L T A G E :V z (V)TIME:t(s)Rth-t CHARACTERISTICST R A N S I E N T T H A E R M A L I M P E D A N C E :R t h (°C /W )110100123456D Y N A M I C I M PE D A N C E :Z z (Ω)ZENER CURRENT(mA)Zz-Iz CHARACTERISTICSData SheetNoticeN o t e sNo copying or reproduction of this document, in part or in whole, is permitted without theconsent of ROHM Co.,Ltd.The content specified herein is subject to change for improvement without notice.The content specified herein is for the purpose of introd ucing ROHM's prod ucts (hereinafter"Products"). If you wish to use any such Product, please be sure to refer to the specifications,which can be obtained from ROHM upon request.Examples of application circuits, circuit constants and any other information contained hereinillustrate the standard usage and operations of the Products. The peripheral conditions mustbe taken into account when designing circuits for mass production.Great care was taken in ensuring the accuracy of the information specified in this document.However, should you incur any d amage arising from any inaccuracy or misprint of suchinformation, ROHM shall bear no responsibility for such damage.The technical information specified herein is intended only to show the typical functions of andexamples of application circuits for the Prod ucts. ROHM d oes not grant you, explicitly orimplicitly, any license to use or exercise intellectual property or other rights held by ROHM andother parties. ROHM shall bear no responsibility whatsoever for any dispute arising from theuse of such technical information.The Products specified in this document are intended to be used with general-use electronicequipment or devices (such as audio visual equipment, office-automation equipment, commu-nication devices, electronic appliances and amusement devices).The Products specified in this document are not designed to be radiation tolerant.While ROHM always makes efforts to enhance the quality and reliability of its Prod ucts, aProduct may fail or malfunction for a variety of reasons.Please be sure to implement in your equipment using the Products safety measures to guardagainst the possibility of physical injury, fire or any other d amage caused in the event of thefailure of any Product, such as derating, redundancy, fire control and fail-safe designs. ROHMshall bear no responsibility whatsoever for your use of any Product outside of the prescribedscope or not in accordance with the instruction manual.The Products are not designed or manufactured to be used with any equipment, device orsystem which requires an extremely high level of reliability the failure or malfunction of whichmay result in a direct threat to human life or create a risk of human injury (such as a medicalinstrument, transportation equipment, aerospace machinery, nuclear-reactor controller,fuel-controller or other safety device). ROHM shall bear no responsibility in any way for use ofany of the Products for the above special purposes. If a Product is intended to be used for anysuch special purpose, please contact a ROHM sales representative before purchasing.If you intend to export or ship overseas any Product or technology specified herein that maybe controlled under the Foreign Exchange and the Foreign Trade Law, you will be required toobtain a license or permit under the Law.Thank you for your accessing to ROHM product informations.More detail product informations and catalogs are available, please contact us.ROHM Customer Support System/contact/分销商库存信息: ROHMUMZ6.8ENTR。

ZMM5V1中文资料

ZMM5V1中文资料

Type Number
Temperature Coefficient (%/K) -0.09 to -0.06 -0.09 to -0.06 -0.08 to -0.05 -0.08 to -0.05 -0.08 to -0.05 -0.08 to -0.05 -0.06 to -0.03 -0.05 to +0.02 -0.02 to +0.02 -0.05 to +0.05 0.03 to 0.06 0.03 to 0.07 0.03 to 0.07 0.03 to 0.08 0.03 to 0.09 0.03 to 0.10 0.03 to 0.11 0.03 to 0.11 0.03 to 0.11 0.03 to 0.11 0.03 to 0.11 0.03 to 0.11 0.03 to 0.11 0.04 to 0.12 0.04 to 0.12 0.04 to 0.12 0.04 to 0.12 0.04 to 0.12 0.04 to 0.12 0.04 to 0.12 0.04 to 0.12 0.04 to 0.12 0.04 to 0.12 0.04 to 0.12 0.04 to 0.12 0.04 to 0.12 0.04 to 0.12
Characteristic Forward Voltage @ IF = 200mA Thermal Resistance, Junction to Ambient Air (Note 2) Operating and Storage Temperature Range Notes:
1. Tested with Pulses, tp = 20ms. 2. Valid provided that Electrodes are kept at Ambient Temperature.
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FEATURES
♦Silicon Planar Zener Diodes
♦In Mini-MELF case especially for automatic insertion.
♦The Zener voltages are graded according to the international E 24 standard. Smaller voltage
tolerances and other Zener voltages are available upon request.
♦These diodes are also available in DO-35 case with the type designation ZPD1 … ZPD51.
MECHANICAL DATA
Case:Mini-MELF Glass Case (SOD-80)Weight:approx. 0.05 g
MAXIMUM RATINGS
Ratings at 25°C ambient temperature unless otherwise specified.
SYMBOL VALUE UNIT
Zener Current (see Table “Characteristics”)Power Dissipation at T amb = 25°C P tot 500(1)mW Junction Temperature T j 175°C Storage Temperature Range
T S
– 55 to +175
°C
ZENER DIODES
.142 (3.6).019 (0.48)∅Cathode Mark
.063 (1.6).134 (3.4)
.055 (1.4)
.011 (0.28)
Dimensions are in inches and (millimeters)
ZMM1(3)0.7 ... 0.8 6.5 (< 8)< 50– 26 ... – 23–280340ZMM2.7 2.5 ... 2.975 (< 83)< 500– 9 ... – 4–135160ZMM3 2.8 ... 3.280 (< 95)< 500– 9 ... – 3–117140ZMM3.3 3.1 ... 3.580 (< 95)< 500– 8 ... – 3–109130ZMM3.6 3.4 ... 3.880 (< 95)< 500– 8 ... – 3–101120ZMM3.9 3.7 ... 4.180 (< 95)< 500– 7 ... – 3–92110ZMM4.3 4.0 ... 4.680 (< 95)< 500– 6 ... – 1–85100ZMM4.7 4.4 ... 5.070 (< 78)< 500– 5 ... +2–7690ZMM5.1 4.8 ... 5.430 (< 60)< 480– 3 ... +4> 0.86780ZMM5.6 5.2 ... 6.010 (< 40)< 400– 2 ... +6> 15970ZMM6.2 5.8 ... 6.6 4.8 (< 10)< 200– 1 ... +7> 25464ZMM6.8 6.4 ... 7.2 4.5 (< 8)< 150+2 ... +7> 34958ZMM7.57.0 ... 7.9 4 (< 7)< 50+3 ... +7> 54453ZMM8.27.7 ... 8.7 4.5 (< 7)< 50+4 ... +7> 64047ZMM9.18.5 ... 9.6 4.8 (< 10)< 50+5 ... +8> 73643ZMM109.4 ... 10.6 5.2 (< 15)< 70+5 ... +8> 7.53340ZMM1110.4 ... 11.6 6 (< 20)< 70+5 ... +9> 8.53036ZMM1211.4 ... 12.77 (< 20)< 90+6 ... +9> 92832ZMM1312.4 ... 14.19 (< 25)< 110+7 ... +9> 102529ZMM1513.8 ... 15.611 (< 30)< 110+7 ... +9> 112327ZMM1615.3 ... 17.113 (< 40)< 170+8 ... +9.5> 122024ZMM1816.8 ... 19.118 (< 50)< 170+8 ... +9.5> 141821ZMM2018.8 ... 21.220 (< 50)< 220+8 ... +10> 151720ZMM2220.8 ... 23.325 (< 55)< 220+8 ... +10> 171618ZMM2422.8 ... 25.628 (< 80)< 220+8 ... +10> 181316ZMM2725.1 ... 28.930 (< 80)< 250+8 ... +10> 201214ZMM3028 ... 3235 (< 80)< 250+8 ... +10> 22.51013ZMM3331 ... 3540 (< 80)< 250+8 ... +10> 25912ZMM3634 ... 3840 (< 90)< 250+8 ... +10> 27911ZMM3937 ... 4150 (< 90)< 300+10 ... +12> 29810ZMM4340 ... 4660 (< 100)< 700+10 ... +12> 3279.2ZMM4744 ... 5070 (< 100)< 750+10 ... +12> 3568.5ZMM5148 (54)
70 (< 100)< 750+10 ... +12> 3867.8ZMM5652.0 … 60.0(4)<135(4)<1000(5)typ. +10(4)–––ZMM6258.0 … 66.0(4)<150(4)<1000(5)typ. +10(4)–––ZMM6864.0 … 72.0(4)<200(4)<1000(5)typ. +10(4)–––ZMM75
70.0 … 79.0(4)
<250(4)
<1500(5)
typ. +10(4)



NOTES:
(1) Tested with pulses t p = 5 ms
(2) Valid provided that electrodes are kept at ambient temperature
(3) The ZMM1 is a silicon diode operated in forward direction. Hence, the index of all parameters should be “F” instead of “Z”
Connect the cathode electrode to the negative pole (4) at I Z = 2.5 mA (5) at I Z = 0.5 mA
ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified.
Type
Zener Voltage (1)
at I Z = 5 mA
V Z V
at I Z = 5 mA f = 1 kHz r zj Ωat I Z = 1 mA f = 1 kHz r zj ΩTemp. Coeff.of Zener Voltage
at I Z = 5 mA αVZ 10–4/K Reverse Voltage at
I R = 100 nA
V R V at
T amb = 45°C I Z = mA Admissable Zener current (2)
at
T amb = 25°C I Z = mA Dynamic Resistance。

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