IRF634A中文资料

IRF场效应管大全

50V 1000V 900V 200V 100V 500V 500V 500V 350V 400V 400V 200V 200V 100V 反压 Vbe0 100V 60V 400V 400V 100V 80V 100V 60V 800V 600V 600V 600V 200V 200V 200V 反压 Vbe0
15A 4A 4.7A 12A 19A 20A 14A 8A 14A 16A 10A 33A 19A 40A 电流 Icm 30A 65A 4A 4A 1A 1.1A 1.3A 0.8A 2.8A 6.2A 3.6A 2.5A 6.5A 6.5A 1A 电流 Icm
42W 150W 150W 150W 150W 250W 180W 150W 180W 180W 150W 180W 150W 180W 功率 Pcm 150W 180W 32W 32W 1W 1W 1W 1W 75W 125W 74W 50W 75W 75W 20W 功率 Pcm
IRF 场效应管
晶体管型号征频率
管子类型
IRFU020 IRFPG42 IRFPF40 IRFP9240 IRFP9140 IRFP460 IRFP450 IRFP440 IRFP353 IRFP350 IRFP340 IRFP250 IRFP240 IRFP150 晶体管型号 IRFP140 IRFP054 IRFI744 IRFI730 IRFD9120 IRFD123 IRFD120 IRFD113 IRFBE30 IRFBC40 IRFBC30 IRFBC20 IRFS9630 IRF9630 IRF9610 晶体管型号
* * * * * * * * * * * * * * 放大系数 * * * * * * * * * * * * * * * 放大系数

场效应管资料

场效应管资料大家平时都可以查到这些资料，不过也比较麻烦的。

07N03L 30V 80A 150W N10N20 10A 200V N 沟道MOS管10N60 10A 600V11N80 11A 800V 156W11P06 60V 9.4A P沟道直插13N60 13A 600V N 沟道15N03L 30V 42A 83W N2N7000 60V 0.2A 0.35W N2N7000 60V 0.2A 0.35W N40N03H 30V 40A N4232 内含P沟道,N沟道MOS管各一,4532M 内含P沟道,N沟道MOS管各一,50N03L(SD 30V 47A 50W N 沟道小贴片MOS 55N03 25V 55A 103W5N90 5A 900V5P25 250V 5A6030LX 30V 52A 42W N603AL 30V 25A 60W N 沟道小贴片MOS6A60 600V 6A N6N70 700V 6A N6P25 250V 6A70L0270N06 70A 60V 125W7N60 600V 7A N,铁7N70 7A 700V85L028N25 250V ,8A ,同IRF63495N03 25V 75A 125W9916H 18V 35A 58W 小贴片，全新9N60 9A 600V9N70 9A 700VAF4502CS 内含P沟道，N沟道MOS管各一A04403 30V 6.1A 单P沟道8脚贴片A04404 30V 8.5A 单N沟道8脚贴片A04405 30V 6A 3W 单P沟道8脚贴片A04406 30V,11.5A,单N沟道,8脚贴A04407 30V 12A 3W 单P沟道,8脚贴片A04407 30V 12A 3W 单P沟道,8脚贴片A04408 30V 12A 单N沟道,8脚贴片A04409 30V 15A P沟道场效应,8脚A04410 30V 18A 单N沟道8脚贴片A04411 30V 8A 3W P沟道场效应,8脚A04413 30V 15A 3W 单P沟道,8脚贴片A04413 30V 15A 3W 单P沟道,8脚贴片A04414 30V,8.5A,3WM 单N沟道，8脚A04418 30V 11.5A N沟道8脚贴片A04422 30V 11A N 沟道8脚贴片A04423 30V 15A 3.1W 单P沟道,8脚贴A04600 内含P沟道，N沟道MOS管各一A0D405 30V，18A，P高压板MOS管贴A0D408 30V，18A，P高压板MOS管贴A0D409 60V 26/18A P 高压板MOS 管贴A0D409 60V 26/18A P 高压板MOS 管贴A0D420 30V,10A,N高压板MOS管贴A0D442 60V，38/27A，N 高压板MOS管贴A0D442 60V38/27A,N高压板MOS管贴A0D444 60V,12A,N 高压板MOS管贴A0P600 内含P,N沟道各1,30V 7.5AA0P605 内含P,N沟道各1,30V 7.5AA0P607 内含P、N沟道各1，60V 4。

常用全系列场效应管MOS管型号参数封装资料

常用全系列场效应管MOS管型号参数封装资料常用的全系列场效应管MOS管型号参数封装资料有很多，以下是一些常见的型号和参数封装资料：1.IRF3205IRF3205是一种常见的N沟道MOSFET管，栅极电压为20V，漏极电流为110A，最大功耗为200W，电阻为8mΩ。

2.IRF4905IRF4905是一种N沟道MOSFET管，栅极电压为55V，漏极电流为74A，最大功耗为200W，电阻为0.02Ω。

3.IRF540NIRF540N是一种N沟道MOSFET管，栅极电压为100V，漏极电流为33A，最大功耗为150W，电阻为0.077Ω。

4.IRF520IRF520是一种N沟道MOSFET管，栅极电压为100V，漏极电流为9.2A，最大功耗为75W，电阻为0.27Ω。

5.IRLB3034PBFIRLB3034PBF是一种N沟道MOSFET管，栅极电压为40V，漏极电流为195A，最大功耗为200W，电阻为1.4mΩ。

6.IRL540IRL540是一种N沟道MOSFET管，栅极电压为100V，漏极电流为28A，最大功耗为150W，电阻为0.05Ω。

这些型号的MOSFET管通常都具有三个主要的参数，即栅极电压（Vgs），漏极电流（Id），以及最大功耗（Pd）或电阻（Rds(on)）。

栅极电压指的是在正常操作时栅极和源极之间的电压，超过这个电压可能会损坏器件。

漏极电流指的是从漏极流出的最大电流，超过这个电流可能会损坏器件。

最大功耗或电阻指的是在正常操作时器件能够承受的最大功耗或电阻。

此外，还有一些其他的参数可以帮助选择合适的MOSFET管，例如电流增益（hfe）和恢复时间（tr、tf）。

电流增益是指当栅极电压变化时，漏极电流的变化率。

恢复时间指的是从开关状态到非开关状态的时间。

这些型号的封装通常包括TO-220、TO-262、D2PAK、TO-247等。

每种封装都有其自身的特点和适用范围，需要根据具体的应用来选择合适的封装。

常用的P沟道场效应管

常用大功率P沟道场效应管的选型2009-11-16 14:24IRF系列 POWER MOSFET 功率场效应管型号参数查询及代换带有"-"号的参数为P沟道场效应管,带有/的参数的为P沟道,N沟道双管封装在一起的场效应管,没注明的均为N沟道场效应管.型号 Drain-to-Source Voltage漏极到源极电压 Static Drain-SourceOn-State Resistance静态漏源通态电阻 Continuous Drain Current漏极连续电流(TC=25℃) PD Total Power Dissipation 总功率耗散(TC=25℃） Package 封装 Toshiba Replacement 替换东芝型号 Vender 供应商型号---V ---A---W----封装IRF48 60 - 50 190 TO-220AB - IRIRF024 60 - 17 60 TO-204AA - IRIRF034 60 - 30 90 TO-204AE - IRIRF035 60 - 25 90 TO-204AE - IRIRF044 60 - 30 150 TO-204AE - IRIRF045 60 - 30 150 TO-204AE - IRIRF054 60 - 30 180 TO-204AA - IRIRF120 100 - 8.0 40 TO-3 - IRIRF121 60 - 8.0 40 TO-3 - IRIRF122 100 - 7.0 40 TO-3 - IRIRF123 60 - 7.0 40 TO-3 - IRIRF130 100 - 14 75 TO-3 - IRIRF131 60 - 14 75 TO-3 - IRIRF132 100 - 12 75 TO-3 - IRIRF133 60 - 12 75 TO-3 - IRIRF140 100 - 27 125 TO-204AE - IRIRF141 60 - 27 125 TO-204AE - IRIRF142 100 - 24 125 TO-204AE - IRIRF143 60 - 24 125 TO-204AE - IRIRF150 100 - 40 150 TO-204AE - IRIRF151 60 - 40 150 TO-204AE - IRIRF152 100 - 33 150 TO-204AE - IRIRF153 60 - 33 150 TO-204AE - IRIRF220 200 - 5.0 40 TO-3 - IRIRF221 150 - 5.0 40 TO-3 - IRIRF222 200 - 4.0 4.0 TO-3 - IRIRF223 150 - 4.0 40 TO-3 - IRIRF224 250 - 3.8 40 TO-204AA - IRIRF225 250 - 3.3 40 TO-204AA - IRIRF231 150 - 9.0 75 TO-3 - IRIRF232 200 - 8.0 75 TO-3 - IRIRF233 150 - 8.0 75 TO-3 - IRIRF234 250 - 8.1 75 TO-204AA - IR IRF235 250 - 6.5 75 TO-204AA - IR IRF240 200 - 18 125 TO-204AE - IR IRF241 150 - 18 125 TO-204AE - IR IRF242 200 - 16 125 TO-204AE - IR IRF243 150 - 16 125 TO-204AE - IR IRF244 250 - 14 125 TO-204AA - IR IRF245 250 - 13 125 TO-204AA - IR IRF250 200 - 30 150 TO-204AE - IR IRF251 150 - 30 150 TO-204AE - IR IRF252 200 - 25 150 TO-204AE - IR IRF253 150 - 25 150 TO-204AE - IR IRF254 250 - 22 150 TO-204AE - IR IRF255 250 - 20 150 TO-204AE - IR IRF320 400 - 3.0 40 TO-3 - IRIRF321 350 - 3.0 40 TO-3 - IRIRF322 400 - 2.5 40 TO-3 - IRIRF323 350 - 2.5 40 TO-3 - IRIRF330 400 - 5.5 75 TO-3 - IRIRF331 350 - 5.5 75 TO-3 - IRIRF332 400 - 4.5 75 TO-3 - IRIRF333 350 - 4.5 75 TO-3 - IRIRF340 400 - 10 125 TO-3 - IRIRF341 350 - 10 125 TO-3 - IRIRF342 400 - 8.0 125 TO-3 - IR IRF343 350 - 8.0 125 TO-3 - IR IRF350 400 - 15 150 TO-3 - IRIRF351 350 - 15 150 TO-3 - IRIRF352 400 - 13 150 TO-3 - IRIRF353 350 - 13 150 TO-3 - IRIRF360 400 - 25 300 TO-204AE - IR IRF362 400 - 22 300 TO-204AE - IR IRF420 500 - 2.5 50 TO-3 - IRIRF421 450 - 2.5 50 TO-3 - IRIRF422 500 - 2.0 50 TO-3 - IRIRF423 450 - 2.0 50 TO-3 - IRIRF430 500 - 4.5 75 TO-3 - IRIRF431 450 - 4.5 75 TO-3 - IRIRF432 500 - 4.0 75 TO-3 - IRIRF433 450 - 4.0 75 TO-3 - IRIRF441 450 - 8.0 125 TO-3 - IRIRF442 500 - 7.0 125 TO-3 - IRIRF443 450 - 7.0 125 TO-3 - IRIRF448 500 - 9.6 130 TO-204AA - IRIRF449 500 - 8.6 130 TO-204AA - IRIRF450 500 - 13 150 TO-3 - IRIRF451 450 - 13 150 TO-3 - IRIRF452 500 - 12 150 TO-3 - IRIRF453 450 - 12 150 TO-3 - IRIRF460 500 - 21 300 TO-204AE - IRIRF462 500 - 19 300 TO-204AE - IRIRF1010 55 0.014 75 150 TO-220AB 2SK2312 IRIRF1010E 60 0.012 81 170 TO-220AB 2SK2985 IR IRF1010EL 60 0.012 83 170 TO-262 2SK2986 IRIRF1010ES 60 0.012 83 170 D2PAK 2SK2986 IRIRF1010N 55 0.012 72 130 TO-220AB - IRIRF1010NL 55 0.011 84 170 TO-262 - IRIRF1010NS 55 0.011 84 3.8 D2PAK - IRIRF1010S 55 0.014 75 150 D2PAK 2SK2376 IRIRF1310 100 0.04 43 150 TO-220AB 2SK2466 IRIRF1310N 100 0.036 36 120 TO-220AB - IRIRF1310NS 100 0.036 36 120 D2PAK - IRIRF1310S 100 0.04 43 150 D2PAK 2SK2466 IRIRF2807 75 0.013 71 150 TO-220AB - IRIRF2807L 75 0.013 71 150 TO-262 - IRIRF2807S 75 0.013 71 150 D2PAK - IRIRF3205 55 0.008 98 150 TO-220AB 2SK2985 IRIRF3205L 55 0.008 110 200 TO-262 2SK2986 IRIRF3205S 55 0.008 110 200 D2PAK 2SK2986 IRIRF3315 150 0.082 21 94 TO-220AB - IRIRF3315L 150 0.082 21 94 TO-262 - IRIRF3315S 150 0.082 21 94 D2PAK - IRIRF3415 150 0.042 37 150 TO-220AB - IRIRF3415S 150 0.042 37 150 D2PAK - IRIRF3710 100 0.028 46 150 TO-220AB - IRIRF3710S 100 0.028 46 150 D2PAK - IRIRF4905 -55 0.02 64 150 TO-220AB - IRIRF4905L -55 0.02 -74 200 TO-262 - IRIRF4905S -55 0.02 -74 3.8 D2PAK - IRIRF510 100 0.54 5.6 43 TO-220AB 2SK2399 IRIRF510A 100 0.4 5.6 33 TO-220AB 2SK2399 Samsung IRF510S 100 0.54 5.6 43 D2PAK 2SK2399 IRIRF511(R) 80 0.54 5.6 - TO-220AB 2SK2399 HarrisIRF512(R) 100 0.74 4.9 - TO-220AB 2SK2399 Harris IRF513(R) 80 0.74 4.9 - TO-220AB 2SK2399 Harris IRF520 100 0.27 9.2 60 TO-220AB 2SK2399 IRIRF520 100 0.27 10 - TO-220AB 2SK2399 STIRF520A 100 0.2 9.2 45 TO-220AB 2SK2399 Samsung IRF520FI 100 0.27 7 - TO-220FP 2SK2399 STIRF520N 100 0.2 9.5 47 TO-220AB 2SK2399 IRIRF520NS 100 0.2 9.5 47 D2PAK 2SK2399 IRIRF520S 100 0.27 9.2 60 D2PAK 2SK2399 IRIRF521(R) 80 0.27 9.2 - TO-220AB 2SK2399 Harris IRF5210 -100 0.06 -35 150 TO-220AB - IRIRF5210S -100 0.06 -35 150 D2PAK - IRIRF522(R) 100 0.36 8 - TO-220AB - HarrisIRF523(R) 80 0.36 8 - TO-220AB 2SK2399 HarrisIRF530 100 0.16 14 88 TO-220AB 2SK2314 IRIRF530 100 0.16 16 - TO-220AB 2SK2314 STIRF5305 -55 0.06 -31 110 TO-220AB 2SJ349 IRIRF5305L -55 0.06 -31 110 TO-262 2SJ401 IRIRF5305S -55 0.06 -31 110 D2PAK 2SJ401 IRIRF530A 100 0.11 14 55 TO-220AB 2SK2314 Samsung IRF530FI 100 0.16 10 - TO-220FP 2SK2391 STIRF530N 100 0.11 15 60 TO-220AB 2SK2314 IRIRF530NS 100 0.11 15 63 D2PAK 2SK2789 IRIRF530S 100 0.16 14 88 D2PAK 2SK2789 IRIRF531(R) 80 0.16 14 - TO-220AB 2SK2314 Harris IRF532(R) 100 0.23 12 - TO-220AB 2SK2399 Harris IRF533(R) 80 0.23 12 - TO-220AB 2SK2314 Harris IRF540 100 0.077 28 150 TO-220AB 2SK2314 IRIRF540 100 0.077 30 - TO-220AB 2SK2314 STIRF540A 100 0.052 28 107 TO-220AB 2SK2466 Samsung IRF540FI 100 0.077 16 - TO-220FP 2SK2391 STIRF540N 100 0.052 27 94 TO-220AB 2SK2466 IRIRF540NS 100 0.052 27 110 D2PAK 2SK2466 IRIRF540S 100 0.077 28 150 D2PAK 2SK2789 IRIRF541(R) 80 0.077 28 - TO-220AB 2SK2314 Harris IRF542(R) 100 0.1 25 - TO-220AB 2SK2314 Harris IRF543(R) 80 0.1 25 - TO-220AB 2SK2314 HarrisIRF550A 100 0.04 40 167 TO-220AB 2SK2466 Samsung IRF610 200 1.5 3.3 36 TO-220AB 2SK2381 IRIRF610A 200 1.5 3.3 38 TO-220AB 2SK2381 Samsung IRF610S 200 1.5 3.3 36 D2PAK 2SK2920 IRIRF611(R) 150 1.5 3.3 - TO-220AB 2SK2381 Harris IRF612(R) 200 2.4 2.6 - TO-220AB 2SK2381 Harris IRF613(R) 150 2.4 2.6 - TO-220AB 2SK2381 HarrisIRF614 250 2 2.7 36 TO-220AB 2SK2840 IRIRF614A 250 2 2.8 40 TO-220AB 2SK2840 Samsung IRF614S 250 2 2.7 36 D2PAK - IRIRF620 200 0.8 5.2 50 TO-220AB 2SK2381 IRIRF620 200 0.8 7 - TO-220AB 2SK2381 STIRF620A 200 0.8 5 47 TO-220AB 2SK2381 Samsung IRF620FI 200 0.8 4.3 - TO-220FP 2SK2381 STIRF620S 200 0.8 5.2 50 D2PAK 2SK2920 IRIRF621(R) 150 0.8 5 - TO-220AB 2SK2381 Harris IRF6215 -150 0.29 -11 83 TO-220AB - IRIRF622(R) 200 1.2 4 - TO-220AB 2SK2381 Harris IRF623(R) 150 1.2 4 - TO-220AB 2SK2381 Harris IRF624 250 1.1 4.4 50 TO-220AB 2SK2840 IRIRF624A 250 1.1 4.1 49 TO-220AB 2SK2840 Samsung IRF624S 250 1.1 4.4 50 D2PAK - IRIRF625 250 1.1 3.8 - TO-220AB 2SK2840 HarrisIRF626 275 0.68 6.5 - TO-220AB - HarrisIRF627 275 1.1 3.8 - TO-220AB - HarrisIRF630 200 0.4 9 74 TO-220AB YTA630 IRIRF630A 200 0.4 9 72 TO-220AB YTA630 SamsungIRF630S 200 0.4 9 74 D2PAK 2SK2401 IRIRF631(R) 150 0.4 9 - TO-220AB 2SK2350 Harris IRF632(R) 200 0.4 9 - TO-220AB YTA630 HarrisIRF633(R) 150 0.6 8 - TO-220AB 2SK2350 Harris IRF634 250 0.45 8.1 74 TO-220AB 2SK2914 IRIRF634A 250 0.45 8.1 74 TO-220AB 2SK2914 Samsung IRF634S 250 0.45 8.1 74 D2PAK 2SK2598 IRIRF635 250 0.45 8.1 - TO-220AB 2SK2914 Harris IRF636 275 0.34 13 - TO-220AB - HarrisIRF637 275 0.45 8.1 - TO-220AB - HarrisIRF640 200 0.18 18 125 TO-220AB YTA640 IRIRF640A 200 0.18 18 139 TO-220AB YTA640 Samsung IRF640S 200 0.18 18 125 D2PAK 2SK2401 IRIRF641(R) 150 0.18 18 - TO-220AB 2SK2382 Harris IRF642(R) 200 0.18 18 - TO-220AB 2SK2382 Harris IRF643(R) 150 0.22 16 - TO-220AB 2SK2382 Harris IRF644 250 0.28 14 125 TO-220AB 2SK2508 IRIRF644A 250 0.28 14 139 TO-220AB 2SK2508 Samsung IRF644S 250 0.28 14 125 D2PAK 2SK2598 IRIRF645 250 0.28 14 - TO-220AB 2SK2508 HarrisIRF646 275 0.28 15 - TO-220AB - HarrisIRF647 275 0.28 14 - TO-220AB - HarrisIRF650A 200 0.085 28 156 TO-220AB - SamsungIRF654A 250 0.14 21 156 TO-220AB - Samsung 2SJ112 100 10 1002SJ113 100 10 1002SJ114 200 8 1002SJ115 160 8 1002SJ116 400 8 1252SJ118 140 8 1002SJ119 160 8 1002SJ131 170 10 1002SJ200 180 10 1202SJ201 200 12 1502SJ351 180 8 1002SJ352 200 8 1002SJ459 450 4 70IRF9130 100 12 75IRF9132 100 10 75IRF9140 100 19 125IRF9142 100 15 125IRF9230 200 6.5 75IRF9231 150 6.5 75IRF9232 200 5.5 75IRF9233 150 5.5 75IRF9240 200 11 125IRF9241 150 11 125 IRF9242 200 9 125 IRF9243 150 9 125 IRF9540 100 19 125 IRF9541 60 19 125 IRF9542 100 15 125 IRF9543 60 15 125 IRF9640 200 11 125 IRF9641 100 11 125 IRF9642 200 9 125 IRF9643 150 9 125 IRF9630 200 6.5 75 IRF9631 150 6.5 75 IRF9632 200 5.5 75 IRF9633 150 5.5 75 MTM2P45 450 2 75 MTM2P50 500 2 75 MTM5P18 180 5 75 MTM5P20 200 5 75 MTM5P25 250 5 75 MTM8P10 100 8 75 MTM8P18 180 8 125 MTM20P10 100 20 125MTP2P45 450 2 75 MTP2P50 500 2 75 MTP5P18 180 8 75 MTP5P20 200 5 75 MTP5P25 250 5 75 MTP8P18 100 8 75 MTP8P20 200 8 75 MTP8P25 250 8 75 MTP2P50E 500 2 75 SSM11P20 200 11 125 SSM20P10 100 20 125 SMP3P10 100 3 20 SMP11P20 200 11 125 SMP20P10 100 20 125 VPO335N1 350 2.7 125 IXTM5P50A 500 5 125 IXTM6P25A 250 6 75 IXTM7P15A 150 7 125 IXTM7P20A 200 7 75 IXTM7P45A 450 7 125 IXTM7P50A 500 7 125 IXTM8P25A 250 8 125 IXTM8P45A 450 8 150IXTM8P50A 500 8 150 IXTM9P15A 150 9 125 IXTM9P20A 200 9 125 IXTM9P25A 250 9 125 IXTM10P45A 450 10 200 IXTM10P50A 500 10 200 IXTM11P15A 100 15 125 IXTM11P20A 200 15 125 IXTMQQP45A 450 11 200 IXTM11P50A 500 11 200 IXTM12P25A 250 12 125 IXTM13P15A 150 13 125 IXTM13P20A 200 13 125 IXTM13P25A 250 13 125 IXTM15P15A 150 15 150 IXTM15P20A 200 15 150。

BUF634中文资料

目录产品特点： (2)应用： (2)描述： (2)规格： (3)引脚结构： (5)绝对最大额定值： (5)典型性能曲线：在T A = 25°C，V S =±15V，除非另有说明。

(6)应用信息： (9)输出电流： (9)热保护： (9)功耗： (10)输入特性： (10)带宽控制PIN： (10)提高运算放大器的输出电流： (10)高频应用： (11)封装形式 (14)产品特点：●高输出电流：250mA●转换速度:2000 v / μs●PIN所选带宽：30MHz到180MHz●低静态电流：1.5mA（30MHz的带宽）●电源范围：±2.25〜±18V●内部电流可限制●过热关断保护●8引脚DIP，SO-8，5引脚TO-220，5引脚DDPAK表面贴装应用：●阀驱动●电磁驱动器●运算放大器电流升压●线路驱动器●耳机驱动器●视频驱动程序●电机驱动器●测试设备●ATE引脚驱动器描述：BUF634是一种高速开环单位增益缓冲器，适用范围广的应用中建议。

它可用于运算放大器的反馈环路内，以增加输出电流，消除热反馈，并提高容性负载驱动。

对于低功耗应用，BUF634静态电流1.5mA具有250mA输出，2000V/μs摆率和30MHz 带宽。

V-和BW引脚之间连接一个电阻，可以调整带宽从30MHz到180MHz。

输出电路完全由内部电流限制和热关断，使其坚固耐用和易于使用的保护。

BUF634可在多种封装形式，以适应机械和功耗要求。

类型包括8引脚DIP，SO-8表面贴装，5引脚TO-220，采用5引脚DDPAK表面贴装塑料功率封装。

规格：（在T A = 25°C ，V S =±15V ，除非另有说明）引脚结构：绝对最大额定值：供应电压................................................ ..................................... ±18V 输入电压范围............................................... ................................ ±V S 输出短路（接地）.......................................... .......连续工作温度................................................ ..... -40°C至125°C储存温度................................................ ........ -55°C至125°C结温................................................ ....................... 150°C铅温度（焊接，10s）........................................... ......... 300°C典型性能曲线：在T A = 25°C，V S =±15V，除非另有说明。

IRF634B中文资料

VDS = VGS, ID = 250 µA
2.0 --
4.0
V
VGS = 10 V, ID = 4.05 A
-- 0.345 0.45
Ω
VDS = 40 V, ID = 4.05 A (Note 4) --
7.6
--
S
Dynamic Characteristics
Ciss
Input Capacitance
12
10
VDS = 50V
V = 125V DS
8
V = 200V DS
6
4
2
※ Note : I = 8.1 A D
IRF634B 1.69 0.5 62.5
IRFS634B 3.29 -62.5
Units V A A A V mJ A mJ
V/ns W
W/°C °C
°C
Units °C/W °C/W °C/W
©2001 Fairchild Semiconductor Corporation
Rev. A, November 2001
- Continuous (TC = 100°C)
IDM
Drain Current - Pulsed
(Note 1)
VGSS
Gate-Source Voltage
EAS
Single Pulsed Avalanche Energy
(Note 2)
IAR
Avalanche Current
(Note 1)
IS
Maximum Continuous Drain-Source Diode Forward Current
--
--
8.1

BUF634 中文资料整理陈亚军

图 2。缓冲连接。
输出电流 BUF634 可提供高达 ±250mA 的连续输出电流。内部电路限制输出电流近似为 ±350 毫安--见典型性能曲线“短电路电流与温度“。对于许多应用，但是，热效应将会影响连续输出电流。随接点温度输出电压的摆幅能力和输出电流--见典型曲线“输出电压摆幅与输出电流。尽管四种典型的包装都经高速的输出所测验，但是测试显示，更高的结温与 DIP 和 SO-8 封装类型往往会提供更少的输出电压摆幅。在 DDPAK 表面贴装功率封装的结温度降低，因为它是直接焊接到电路板。TO-220 封装，具有良好的使用散热片，进一步降低结温，使最大可能的输出摆幅。
在 T 一 = 25°C，VŞ = ±15V，除非另有说明
增益和相位与频率与静态电流
增益和相位与频率与温度增益和相位与频率与源电阻
增益和相位与频率与负载电阻
增益和相位与频率与负载电容增益和相位与频率与负载电容
典型性能曲线
在 T 一 = 25°C，VŞ = ±15V，除非另有说明增益和相位与频率与电源电压
应用：
阀门驱动器电磁驱动器 OP AMP 电流放大器线路驱动器耳机（听筒）驱动视频驱动电机驱动测试设备自测引脚驱动
说明：
BUF 是一种高速开环增益缓冲器广泛的应用范围中的建议，它可用于运算放大器的反馈环路内，一起增加输出电流消除热反馈和改善容性负载驱动。对于一个低电压的应用，BUF634 工作在 1.5mA 静态电流，输出为 250mA，2000u/s 电压转
图书。
静电放电敏感度任何集成的电路都可能被 ESD 损坏。放大器等产品建议所有集成电路都采取适当的预防措
施。未能遵守适当的处理和安装程序都可能造成损坏。 ESD 损害的范围可以从细微的降解

BUF634中文资料

1 Feature 1特点•High Output Current: 250 mA•高输出电流：250毫安•Slew Rate: 2000 V/µs •摆率(电压转换速率)：2000 V /µS•Pin-Selected Bandwidth: 30 MHz to 180 MHz •引脚选择带宽：30兆赫至180兆赫•Low Quiescent Current: 1.5 mA (30 MHz BW) •低静态输出电流：1.5毫安（30兆赫带宽）•Wide Supply Range: ±2.25 to ±18 V •宽电压供应范围：2.25至18伏•Internal Current Limit •内部电流限制•Thermal Shutdown Protection •热关机保护•8-Pin PDIP, SOIC-8, 5-Lead TO-220, 5-Lead DDPAK-TO-263 Surface-Mount•8引脚PDIP，SOIC - 8、5引脚TO - 220，5引脚ddpak-to-263表面贴装2 Applications 2应用•Valve Driver •阀门驱动器•Solenoid Driver•螺线管（电磁）驱动器•Op Amp Current Booster•运算放大器电流放大器•Line Driver•线路驱动器•Headphone Driver•耳机驱动器•Video Driver•视频驱动程序•Motor Driver •电机驱动•Test Equipment•测试设备•ATE Pin Driver•ATE自测引脚驱动程序3 Description3 描述The BUF634 device is a high speed, unity-gain open-loop buffer recommended for a wide range of applications. The BUF634 device can be used inside the feedback loop of op amps to increase output current, eliminate thermal feedback, and improve capacitive load drive.是一种高速开环增益缓冲器广泛的应用范围中的建议，它可用于运算放大器的反馈环路内，一起增加输出电流消除热反馈和改善容性负载驱动。

IRF634

1/9July 2001IRF634IRF634FPN-CHANNEL 250V - 0.38Ω - 8A TO-220/TO-220FPMESH OVERLAY™ MOSFETs TYPICAL R DS (on) = 0.38 Ωs EXTREMELY HIGH dv/dt CAPABILITY s100% AVALANCHE TESTEDDESCRIPTIONUsing the latest high voltage MESH OVERLAY ™process, STMicroelectronics has designed an ad-vanced family of power MOSFETs with outstanding performance. The new patented STrip layout cou-pled with the Company’s proprietary edge termina-tion structure, makes it suitable in coverters for lighting applications.APPLICATIONSs HIGH CURRENT, HIGH SPEED SWITCHING s SWITH MODE POWER SUPPLIES (SMPS)s DC-DC CONVERTERS FOR TELECOM, INDUSTRIAL, AND LIGHTING EQUIPMENT s IDEAL FOR MONITOR’s B+ FUNCTIONABSOLUTE MAXIMUM RATINGS(•)Pulse width limited by safe operating areaTYPE V DSS R DS(on)I D IRF634IRF634FP250 V 250 V< 0.45 Ω< 0.45 Ω8 A 8 ASymbol ParameterValueUnit IRF634IRF634FPV DS Drain-source Voltage (V GS = 0)250VV DGR Drain-gate Voltage (R GS = 20 k Ω)250V V GS Gate- source Voltage± 20V I D Drain Current (continuos) at T C = 25°C 88(*)A I D Drain Current (continuos) at T C = 100°C 55(*)A I DM (q )Drain Current (pulsed)3232(*)A P TOT Total Dissipation at T C = 25°C 8030W Derating Factor0.640.24W/°C dv/dt (1)Peak Diode Recovery voltage slope 5V/ns V ISO Insulation Withstand Voltage (DC)-2000V T stg Storage Temperature–65 to 150°C T jMax. Operating Junction Temperature150°C(1) I SD ≤ 8A, di/dt ≤300 A/µs, V DD ≤ V (BR)DSS , Tj ≤T jMAX (*)Limited only by maximum temperature allowedIRF634/IRF634FP2/9THERMAL DATAAVALANCHE CHARACTERISTICSELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)OFFON (1)DYNAMICTO-220TO-220FP Rthj-case Thermal Resistance Junction-case Max 1.564.11°C/W Rthj-ambThermal Resistance Junction-ambient Max62.5°C/W T lMaximum Lead Temperature For Soldering Purpose300°CSymbol ParameterMax ValueUnit I AR Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by T j max)8A E ASSingle Pulse Avalanche Energy(starting T j = 25 °C, I D = I AR , V DD = 50 V)300mJSymbol ParameterTest ConditionsMin.Typ.Max.Unit V (BR)DSS Drain-sourceBreakdown Voltage I D = 250 µA, V GS = 0250V I DSS Zero Gate VoltageDrain Current (V GS = 0)V DS = Max Rating1µA V DS = Max Rating, T C = 125 °C 10µA I GSSGate-body Leakage Current (V DS = 0)V GS = ±20V±100nASymbol ParameterTest ConditionsMin.Typ.Max.Unit V GS(th)Gate Threshold Voltage V DS = V GS , I D = 250µA 234V R DS(on)Static Drain-source On ResistanceV GS = 10V, I D = 4 A0.380.45ΩSymbol ParameterTest ConditionsMin.Typ.Max.Unit g fs (1)Forward Transconductance V DS > I D(on) x R DS(on)max, I D =4A78S C iss Input Capacitance V DS = 25V, f = 1 MHz, V GS = 0770pF C oss Output Capacitance 118pF C rssReverse Transfer Capacitance48pF3/9IRF634/IRF634FPELECTRICAL CHARACTERISTICS (CONTINUED)SWITCHING ONSWITCHING OFFSOURCE DRAIN DIODENote: 1.Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.2.Pulse width limited by safe operating area.Symbol ParameterTest ConditionsMin.Typ.Max.Unit t d(on)Turn-on Delay Time V DD = 125 V, I D = 4 A R G =4.7Ω V GS = 10 V (see test circuit, Figure 3)13ns t r Rise Time 18ns Q g Total Gate Charge V DD = 200V, I D = 8 A,V GS = 10V3751.8nC Q gs Gate-Source Charge 5.2nC Q gdGate-Drain Charge14.8nCSymbol ParameterTest ConditionsMin.Typ.Max.Unit t d(Voff)t f Turn-off- Delay Time Fall TimeV DD = 125V, I D = 4 A, R G =4.7Ω, V GS = 10V (see test circuit, Figure 3)5116ns ns t r(Voff)t f t cOff-voltage Rise Time Fall TimeCross-over TimeV clamp = 200V, I D = 8 A, R G =4.7Ω, V GS = 10V (see test circuit, Figure 5)12.512.528ns ns nsSymbol ParameterTest ConditionsMin.Typ.Max.Unit I SD Source-drain Current 8A I SDM (2)Source-drain Current (pulsed)32A V SD (1)Forward On Voltage I SD = 8 A, V GS = 0 1.7V t rr Reverse Recovery Time I SD = 8 A, di/dt = 100A/µs V DD = 30V, T j = 150°C (see test circuit, Figure 5)198ns Q rr Reverse Recovery Charge 1.1µC I RRMReverse Recovery Current11.3AIRF634/IRF634FP4/9Output Characteristics5/9IRF634/IRF634FPIRF634/IRF634FP6/9Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery TimesFig. 4: Gate Charge test CircuitFig. 2: Unclamped Inductive WaveformFig. 1:Unclamped Inductive Load Test CircuitFig. 3: Switching Times Test Circuit ForResistive LoadIRF634/IRF634FP7/9IRF634/IRF634FP8/9IRF634/IRF634FPInformation furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequencesof use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics productsare not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.The ST logo is a trademark of STMicroelectronics© 2001 STMicroelectronics – Printed in Italy – All Rights ReservedSTMicroelectronics GROUP OF COMPANIESAustralia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco -Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A.9/9。

常用三极管型号及参数资料

常用三极管型号及参数晶体管型号反压Vbe0 电流Icm 功率Pcm 放大系数特征频率管子类型IRFU020 50V 15A 42W * * NMOS场效应IRFPG42 1000V 4A 150W * * NMOS场效应IRFPF40 900V 4.7A 150W * * NMOS场效应IRFP9240 200V 12A 150W * * PMOS场效应IRFP9140 100V 19A 150W * * PMOS场效应IRFP460 500V 20A 250W * * NMOS场效应IRFP450 500V 14A 180W * * NMOS场效应IRFP440 500V 8A 150W * * NMOS场效应IRFP353 350V 14A 180W * * NMOS场效应IRFP350 400V 16A 180W * * NMOS场效应IRFP340 400V 10A 150W * * NMOS场效应IRFP250 200V 33A 180W * * NMOS场效应IRFP240 200V 19A 150W * * NMOS场效应IRFP150 100V 40A 180W * * NMOS场效应晶体管型号反压Vbe0 电流Icm 功率Pcm 放大系数特征频率管子类型IRFP140 100V 30A 150W * * NMOS场效应IRFP054 60V 65A 180W * * NMOS场效应IRFI744 400V 4A 32W * * NMOS场效应IRFI730 400V 4A 32W * * NMOS场效应IRFD9120 100V 1A 1W * * NMOS场效应IRFD123 80V 1.1A 1W * * NMOS场效应IRFD120 100V 1.3A 1W * * NMOS场效应IRFD113 60V 0.8A 1W * * NMOS场效应IRFBE30 800V 2.8A 75W * * NMOS场效应IRFBC40 600V 6.2A 125W * * NMOS场效应IRFBC30 600V 3.6A 74W * * NMOS场效应IRFBC20 600V 2.5A 50W * * NMOS场效应IRFS9630 200V 6.5A 75W * * PMOS场效应IRF9630 200V 6.5A 75W * * PMOS场效应IRF9610 200V 1A 20W * * PMOS场效应晶体管型号反压Vbe0 电流Icm 功率Pcm 放大系数特征频率管子类型IRF9541 60V 19A 125W * * PMOS场效应IRF9531 60V 12A 75W * * PMOS场效应IRF9530 100V 12A 75W * * PMOS场效应IRF840 500V 8A 125W * * NMOS场效应IRF830 500V 4.5A 75W * * NMOS场效应IRF740 400V 10A 125W * * NMOS场效应IRF730 400V 5.5A 75W * * NMOS场效应IRF720 400V 3.3A 50W * * NMOS场效应IRF640 200V 18A 125W * * NMOS场效应IRF630 200V 9A 75W * * NMOS场效应IRF610 200V 3.3A 43W * * NMOS场效应IRF541 80V 28A 150W * * NMOS场效应IRF540 100V 28A 150W * * NMOS场效应IRF530 100V 14A 79W * * NMOS场效应IRF440 500V 8A 125W * * NMOS场效应晶体管型号反压Vbe0 电流Icm 功率Pcm 放大系数特征频率管子类型IRF230 200V 9A 79W * * NMOS场效应IRF130 100V 14A 79W * * NMOS场效应BUZ20 100V 12A 75W * * NMOS场效应BUZ11A 50V 25A 75W * * NMOS场效应BS170 60V 0.3A 0.63W * * NMOS场效应2SC4582 600V 15A 75W * * NPN2SC4517 550V 3A 30W * * NPN2SC4429 1100V 8A 60W * * NPN2SC4297 500V 12A 75W * * NPN2SC4288 1400V 12A 200W * * NPN2SC4242 450V 7A 40W * * NPN2SC4231 800V 2A 30W * * NPN2SC4119 1500V 15A 250W * * NPN2SC4111 1500V 10A 250W * * NPN2SC4106 500V 7A 50W * 20MHZ NPN晶体管型号反压Vbe0 电流Icm 功率Pcm 放大系数特征频率管子类型2SC4059 600V 15A 130W * * NPN2SC4038 50V 0.1A 0.3W * 180MHZ NPN2SC4024 100V 10A 35W * * NPN2SC3998 1500V 25A 250W * * NPN2SC3997 1500V 15A 250W * * NPN2SC3987 50V 3A 20W 1000 * NPN(达林顿)2SC3953 120V 0.2A 1.3W * 400MHZ NPN2SC3907 180V 12A 130W * 30MHZ NPN2SC3893 1400V 8A 50W * 8MHZ NPN2SC3886 1400V 8A 50W * 8MHZ NPN2SC3873 500V 12A 75W * 30MHZ NPN2SC3866 900V 3A 40W * * NPN2SC3858 200V 17A 200W * 20MHZ NPN2SC3807 30V 2A 1.2W * 260MHZ NPN2SC3783 900V 5A 100W * * NPN晶体管型号反压Vbe0 电流Icm 功率Pcm 放大系数特征频率管子类型2SC3720 1200V 10A 200W * * NPN2SC3680 900V 7A 120W * * NPN2SC3679 900V 5A 100W * * NPN2SC3595 30V 0.5A 1.2W 90 * NPN2SC3527 500V 15A 100W 13 * NPN2SC3505 900V 6A 80W 12 * NPN2SC3460 1100V 6A 100W 12 * NPN2SC3457 1100V 3A 50W 12 * NPN2SC3358 20V 0.15A * * 7000MHZ NPN2SC3355 20V 0.15A * * 6500MHZ NPN2SC3320 500V 15A 80W * * NPN2SC3310 500V 5A 40W 20 * NPN2SC3300 100V 15A 100W * * NPN2SC1855 20V 0.02A 0.25W * 550MHZ NPN2SC1507 300V 0.2A 15W * * NPN晶体管型号反压Vbe0 电流Icm 功率Pcm 放大系数特征频率管子类型2SC1494 36V 6A 40W * 175MHZ NPN2SC1222 60V 0.1A 0.25W * 100MHZ NPN2SC1162 35V 1.5A 10W * * NPN2SC1008 80V 0.7A 0.8W * 50MHZ NPN2SC900 30V 0.03A 0.25W * 100MHZ NPN2SC828 45V 0.05A 0.25W * * NPN2SC815 60V 0.2A 0.25W * * NPN2SC380 35V 0.03A 0.25W * * NPN2SC106 60V 1.5A 15W * * NPN2SB1494 120V 25A 120W * * PNP(达林顿）2SB1429 180V 15A 150W * * PNP2SB1400 120V 6A 25W 1000-20000 * PNP(达林顿）2SB1375 60V 3A 2W * * PNP2SB1335 80V 4A 30W * * PNP2SB1317 180V 15A 150W * * PNP晶体管型号反压Vbe0 电流Icm 功率Pcm 放大系数特征频率管子类型2SB1316 100V 2A 10W 15000 * PNP(达林顿）2SB1243 40V 3A 1W * 70MHZ PNP2SB1240 40V 2A 1W * 100MHZ PNP2SB1238 80V 0.7A 1W * 100MHZ PNP2SB1185 60V 3A 25W * 75MHZ PNP2SB1079 100V 20A 100W 5000 * PNP(达林顿）2SB1020 100V 7A 40W 6000 * PNP(达林顿）2SB834 60V 3A 30W * * PNP2SB817 160V 12A 100W * * PNP2SB772 40V 3A 10W * * PNP2SB744 70V 3A 10W * * PNP2SB734 60V 1A 1W * * PNP2SB688 120V 8A 80W * * PNP2SB675 60V 7A 40W * * PNP(达林顿）2SB669 70V 4A 40W * * PNP(达林顿）晶体管型号反压Vbe0 电流Icm 功率Pcm 放大系数特征频率管子类型2SB649 180V 1.5A 1W * * PNP2SB647 120V 1A 0.9W * 140MHZ PNP2SB449 50V 3.5A 22W * * PNP2SA1943 230V 15A 150W * * PNP2SA1785 400V 1A 1W * 140MHZ PNP2SA1668 200V 2A 25W * 20MHZ PNP2SA1516 180V 12A 130W * 25MHZ PNP2SA1494 200V 17A 200W * 20MHZ PNP2SA1444 100V 1.5A 2W * 80MHZ PNP2SA1358 120V 1A 10W * 120MHZ PNP2SA1302 200V 15A 150W * * PNP2SA1301 200V 10A 100W * * PNP2SA1295 230V 17A 200W * * PNP2SA1265 140V 10A 30W * * PNP2SA1216 180V 17A 200W * * PNP晶体管型号反压Vbe0 电流Icm 功率Pcm 放大系数特征频率管子类型2SA1162 50V 0.15A 0.15W * * PNP2SA1123 150V 0.05A 0.75W * * PNP2SA1020 50V 2A 0.9W * * PNP2SA1009 350V 2A 15W * * PNP2N6678 650V 15A 175W * * NPN2N5685 60V 50A 300W * * NPN2N5551 160V 0.6A 0.6W * 100MHZ NPN2N5401 160V 0.6A 0.6W * 100MHZ PNP2N3773 160V 16A 150W * * NPN2N3440 450V 1A 1W * * NPN2N3055 100V 15A 115W * * NPN2N2907 60V 0.6A 0.4W 200 * NPN2N2369 40V 0.5A 0.3W * 800MHZ NPN2N2222 60V 0.8A 0.5W 45 * NPN晶体管型号反压Vbe0 电流Icm 功率Pcm 放大系数特征频率管子类型9018 30V 0.05A 0.4W * 1G NPN9015 50V 0.1A 0.4W * 150MHZ PNP9014 50V 0.1A 0.4W * 150MHZ NPN9013 50V 0.5A 0.6W * * NPN9012 50V 0.5A 0.6W * * PNP9011 50V 0.03A 0.4W * 150MHZ NPNTIP147 100V 10A 125W * * PNPTIP142 100V 10A 125W * * NPNTIP127 100V 8A 65W * * PNPTIP122 100V 8A 65W * * NPNTIP102 100V 8A 2W * * NPNTIP42C 100V 6A 65W * * PNPTIP41C 100V 6A 65W * * NPNTIP36C 100V 25A 125W * * PNPTIP35C 100V 25A 125W * * NPN晶体管型号反压Vbe0 电流Icm 功率Pcm 放大系数特征频率管子类型TIP32C 100V 3A 40W * * PNPTIP31C 100V 3A 40W * * NPNMJE13007 1500V 2.5A 60W * * NPNMJE13005 400V 4A 60W * * NPNMJE13003 400V 1.5A 14W * * NPNMJE2955T 60V 10A 75W * * NPNMJE350 300V 0.5A 20W * * NPNMJE340 300V 0.5A 20W * * NPNMJ15025 400V 16A 250W * * PNPMJ15024 400V 16A 250W * * NPNMJ13333 400V 20A 175W * * NPNMJ11033 120V 50A 300W * * NPNMJ10025 850V 20A 250W * * NPNMJ10016 500V 50A 200W * * NPN晶体管型号反压Vbe0 电流Icm 功率Pcm 放大系数特征频率管子类型BUS13A 1000V 15A 175W * * NPNBUH515 1500V 10A 80W * * NPNBU2532 1500V 15A 150W * * NPNBU2527 1500V 15A 150W * * NPNBU2525 1500V 12A 150W * * NPNBU2522 1500V 11A 150W * * NPNBU2520 800V 10A 150W * * NPNBU2508 700V 8A 125W * * NPNBU2506 1500V 7A 50W * * NPNBU932R 500V 15A 150W * * NPNBU806 400V 8A 60W * * NPNBU406 400V 7A 60W * * NPNBU323 450V 10A 125W * * NPN(达林顿)BF458 250V 0.1A 10W * * NPNBD682 100V 4A 40W * * PNP晶体管型号反压Vbe0 电流Icm 功率Pcm 放大系数特征频率管子类型MJ10015 400V 50A 200W * * NPNMJ10012 400V 10A 175W * * NPN(达林顿)MJ4502 90V 30A 200W * * PNPMJ3055 60V 15A 115W * * NPNMJ2955 60V 15A 115W * * PNPMN650 1500V 6A 80W * * NPNBUX98A 400V 30A 210W * * NPNBUX84 800V 2A 40W * * NPNBUW13A 1000V 15A 150W * * NPNBUV48A 450V 15A 150W * * NPNBUV28A 225V 10A 65W * * NPNBUV26 90V 14A 65W * * NPNBUT12A 450V 10A 125W * * NPNBUT11A 1000V 5A 100W * * NPNBUS14A 1000V 30A 250W * * NPN晶体管型号反压Vbe0 电流Icm 功率Pcm 放大系数特征频率管子类型BD681 100V 4A 40W * * NPNBD244 45V 6A 65W * * PNPBD243 45V 6A 65W * * NPNBD238 100V 2A 25W * * PNPBD237 100V 2A 25W * * NPNBD138 60V 1.5A 12.5W * * PNPBD137 60V 1.5A 12.5W * * NPNBD136 45V 1.5A 12.5W * * PNPBD135 45V 1.5A 12.5W * * NPNBC547 50V 0.2A 0.5W * 300MHZ NPN BC546 80V 0.2A 0.5W * * NPNBC338 50V 0.8A 0.6W * * NPNBC337 50V 0.8A 0.6W * * NPNBC327 50V 0.8 0.6W * * PNPBC307 50V 0.2AA 0.3W * * PNP。

IRF634中文资料

1/9July 2001IRF634IRF634FPN-CHANNEL 250V - 0.38Ω - 8A TO-220/TO-220FPMESH OVERLAY™ MOSFETs TYPICAL R DS (on) = 0.38 Ωs EXTREMELY HIGH dv/dt CAPABILITY s100% AVALANCHE TESTEDDESCRIPTIONUsing the latest high voltage MESH OVERLAY ™process, STMicroelectronics has designed an ad-vanced family of power MOSFETs with outstanding performance. The new patented STrip layout cou-pled with the Company’s proprietary edge termina-tion structure, makes it suitable in coverters for lighting applications.APPLICATIONSs HIGH CURRENT, HIGH SPEED SWITCHING s SWITH MODE POWER SUPPLIES (SMPS)s DC-DC CONVERTERS FOR TELECOM, INDUSTRIAL, AND LIGHTING EQUIPMENT s IDEAL FOR MONITOR’s B+ FUNCTIONABSOLUTE MAXIMUM RATINGS(•)Pulse width limited by safe operating areaTYPE V DSS R DS(on)I D IRF634IRF634FP250 V 250 V< 0.45 Ω< 0.45 Ω8 A 8 ASymbol ParameterValueUnit IRF634IRF634FPV DS Drain-source Voltage (V GS = 0)250VV DGR Drain-gate Voltage (R GS = 20 k Ω)250V V GS Gate- source Voltage± 20V I D Drain Current (continuos) at T C = 25°C 88(*)A I D Drain Current (continuos) at T C = 100°C 55(*)A I DM (q )Drain Current (pulsed)3232(*)A P TOT Total Dissipation at T C = 25°C 8030W Derating Factor0.640.24W/°C dv/dt (1)Peak Diode Recovery voltage slope 5V/ns V ISO Insulation Withstand Voltage (DC)-2000V T stg Storage Temperature–65 to 150°C T jMax. Operating Junction Temperature150°C(1) I SD ≤ 8A, di/dt ≤300 A/µs, V DD ≤ V (BR)DSS , Tj ≤T jMAX (*)Limited only by maximum temperature allowedIRF634/IRF634FP2/9THERMAL DATAAVALANCHE CHARACTERISTICSELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)OFFON (1)DYNAMICTO-220TO-220FP Rthj-case Thermal Resistance Junction-case Max 1.564.11°C/W Rthj-ambThermal Resistance Junction-ambient Max62.5°C/W T lMaximum Lead Temperature For Soldering Purpose300°CSymbol ParameterMax ValueUnit I AR Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by T j max)8A E ASSingle Pulse Avalanche Energy(starting T j = 25 °C, I D = I AR , V DD = 50 V)300mJSymbol ParameterTest ConditionsMin.Typ.Max.Unit V (BR)DSS Drain-sourceBreakdown Voltage I D = 250 µA, V GS = 0250V I DSS Zero Gate VoltageDrain Current (V GS = 0)V DS = Max Rating1µA V DS = Max Rating, T C = 125 °C 10µA I GSSGate-body Leakage Current (V DS = 0)V GS = ±20V±100nASymbol ParameterTest ConditionsMin.Typ.Max.Unit V GS(th)Gate Threshold Voltage V DS = V GS , I D = 250µA 234V R DS(on)Static Drain-source On ResistanceV GS = 10V, I D = 4 A0.380.45ΩSymbol ParameterTest ConditionsMin.Typ.Max.Unit g fs (1)Forward Transconductance V DS > I D(on) x R DS(on)max, I D =4A78S C iss Input Capacitance V DS = 25V, f = 1 MHz, V GS = 0770pF C oss Output Capacitance 118pF C rssReverse Transfer Capacitance48pF3/9IRF634/IRF634FPELECTRICAL CHARACTERISTICS (CONTINUED)SWITCHING ONSWITCHING OFFSOURCE DRAIN DIODENote: 1.Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.2.Pulse width limited by safe operating area.Symbol ParameterTest ConditionsMin.Typ.Max.Unit t d(on)Turn-on Delay Time V DD = 125 V, I D = 4 A R G =4.7Ω V GS = 10 V (see test circuit, Figure 3)13ns t r Rise Time 18ns Q g Total Gate Charge V DD = 200V, I D = 8 A,V GS = 10V3751.8nC Q gs Gate-Source Charge 5.2nC Q gdGate-Drain Charge14.8nCSymbol ParameterTest ConditionsMin.Typ.Max.Unit t d(Voff)t f Turn-off- Delay Time Fall TimeV DD = 125V, I D = 4 A, R G =4.7Ω, V GS = 10V (see test circuit, Figure 3)5116ns ns t r(Voff)t f t cOff-voltage Rise Time Fall TimeCross-over TimeV clamp = 200V, I D = 8 A, R G =4.7Ω, V GS = 10V (see test circuit, Figure 5)12.512.528ns ns nsSymbol ParameterTest ConditionsMin.Typ.Max.Unit I SD Source-drain Current 8A I SDM (2)Source-drain Current (pulsed)32A V SD (1)Forward On Voltage I SD = 8 A, V GS = 0 1.7V t rr Reverse Recovery Time I SD = 8 A, di/dt = 100A/µs V DD = 30V, T j = 150°C (see test circuit, Figure 5)198ns Q rr Reverse Recovery Charge 1.1µC I RRMReverse Recovery Current11.3AIRF634/IRF634FP4/9Output Characteristics5/9IRF634/IRF634FPIRF634/IRF634FP6/9Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery TimesFig. 4: Gate Charge test CircuitFig. 2: Unclamped Inductive WaveformFig. 1:Unclamped Inductive Load Test CircuitFig. 3: Switching Times Test Circuit ForResistive LoadIRF634/IRF634FP7/9IRF634/IRF634FP8/9IRF634/IRF634FPInformation furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequencesof use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics productsare not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.The ST logo is a trademark of STMicroelectronics© 2001 STMicroelectronics – Printed in Italy – All Rights ReservedSTMicroelectronics GROUP OF COMPANIESAustralia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco -Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A.9/9。

Agilent E3631A-E3634A

4
4. 易于使用的设置旋钮实现快速和容易的电压和电流设置 5. 分辨率键提供更细的电压设置，或更高精度
1
7
10
2
5
的电流分辨率 6. 三路独立输出(0 至 +6 V/5 A 和 0 至 ±25 V/1 A) 把被测电路间的任何干扰减到最小。±25 V 的偏置电源能使您设置适宜的工作点
8 11 9
E3632A, E3633A, E3634A 技术指标
型号 DC 输出电压电流 E3632A 0 至 15 V 或 0 至 30 V 0至7A或0至4A E3633A 0 至 8 V 或 0 至 20 V 0 至 20 A 或 0 至 10 A <350 µVrms/2 mVpp <2 mArms <1.5 µArms 0.05%+10 mV 0.2%+10 mA 0.05%+5 mV 0.15%+5 mA 1 mV/1 mA 0.5 mV/1 mA 1 mV/1 mA (<10 A), 10 mA (≥ 10 A) 瞬态响应
10. 远地敏感功能消除负载线压降造成的电压调整误差 11. 单路输出电源提供选择双量程输出的灵活性
●
E3632A (0 至 15 V/7 A 或 0 至 30 V/4 A) E3633A (0 至 8 V/20 A 或 0 至 20 V/10 A) E3634A (0 至 25 V/7 A 或 0 至 50 V/4 A)
推荐的服务选项增加 2 年返回安捷伦维修增加 2 年返回安捷伦校准详情见: /find/removealldoubt
本文中的产品指标和说明可不经通知而更改 Agilent Technologies, Inc. 2009 出版号: 5990-4573CHCN 2009 年 10 月印于北京

BUF634中文资料

目录产品特点： (2)应用： (2)描述： (2)规格： (3)引脚结构： (5)绝对最大额定值： (5)典型性能曲线：在T A = 25°C，V S =±15V，除非另有说明。

(6)应用信息： (9)输出电流： (9)热保护： (9)功耗： (10)输入特性： (10)带宽控制PIN： (10)提高运算放大器的输出电流： (10)高频应用： (11)封装形式 (14)产品特点：●高输出电流：250mA●转换速度:2000 v / μs●PIN所选带宽：30MHz到180MHz●低静态电流：1.5mA（30MHz的带宽）●电源范围：±2.25〜±18V●内部电流可限制●过热关断保护●8引脚DIP，SO-8，5引脚TO-220，5引脚DDPAK表面贴装应用：●阀驱动●电磁驱动器●运算放大器电流升压●线路驱动器●耳机驱动器●视频驱动程序●电机驱动器●测试设备●ATE引脚驱动器描述：BUF634是一种高速开环单位增益缓冲器，适用范围广的应用中建议。

它可用于运算放大器的反馈环路内，以增加输出电流，消除热反馈，并提高容性负载驱动。

对于低功耗应用，BUF634静态电流1.5mA具有250mA输出，2000V/μs摆率和30MHz 带宽。

V-和BW引脚之间连接一个电阻，可以调整带宽从30MHz到180MHz。

输出电路完全由内部电流限制和热关断，使其坚固耐用和易于使用的保护。

BUF634可在多种封装形式，以适应机械和功耗要求。

类型包括8引脚DIP，SO-8表面贴装，5引脚TO-220，采用5引脚DDPAK表面贴装塑料功率封装。

规格：（在T A = 25°C，V S =±15V，除非另有说明）引脚结构：绝对最大额定值：供应电压................................................ ..................................... ±18V 输入电压范围............................................... ................................ ±V S 输出短路（接地）.......................................... .......连续工作温度................................................ ..... -40°C至125°C储存温度................................................ ........ -55°C至125°C结温................................................ ....................... 150°C铅温度（焊接，10s）........................................... ......... 300°C典型性能曲线：在T A = 25°C，V S =±15V，除非另有说明。

常用近500个三极管(MOSFET)中文资料

9011,9012,9013,9014,8050,8550三极管的区别9011 NPN 30V 30mA 400mW 150MHz 放大倍数20-809012 PNP 50V 500mA 600mW 低频管放大倍数30-909013 NPN 20V 625mA 500mW 低频管放大倍数40-1109014 NPN 45V 100mA 450mW 150MHz 放大倍数20-908050 NPN 25V 700mA 200mW 150MHz 放大倍数30-1008550 PNP 40V 1500mA 1000mW 200MHz 放大倍数40-140详情如下：90系列三极管参数90系列三极管大多是以90字为开头的，但也有以ST90、C或A90、S90、SS90、UTC90开头的，它们的特性及管脚排列都是一样的。

9011 结构：NPN集电极-发射极电压30V集电极-基电压50V射极-基极电压5V集电极电流0.03A耗散功率0.4W结温150℃特怔频率平均370MHZ放大倍数：D28-45 E39-60 F54-80 G72-108 H97-146 I132-1989012 结构：PNP集电极-发射极电压-30V集电极-基电压-40V射极-基极电压-5V集电极电流0.5A耗散功率0.625W结温150℃特怔频率最小150MHZ放大倍数：D64-91 E78-112 F96-135 G122-166 H144-220 I190-3009013 结构：NPN集电极-发射极电压25V集电极-基电压45V射极-基极电压5V集电极电流0.5A耗散功率0.625W结温150℃特怔频率最小150MHZ放大倍数：D64-91 E78-112 F96-135 G122-166 H144-220 I190-3009014 结构：NPN集电极-发射极电压45V集电极-基电压50V射极-基极电压5V集电极电流0.1A耗散功率0.4W结温150℃特怔频率最小150MHZ放大倍数：A60-150 B100-300 C200-600 D400-10009015 结构：PNP集电极-发射极电压-45V集电极-基电压-50V射极-基极电压-5V集电极电流0.1A耗散功率0.45W结温150℃特怔频率平均300MHZ放大倍数：A60-150 B100-300 C200-600 D400-10009016 结构：NPN集电极-发射极电压20V集电极-基电压30V射极-基极电压5V集电极电流0.025A耗散功率0.4W结温150℃特怔频率平均620MHZ放大倍数：D28-45 E39-60 F54-80 G72-108 H97-146 I132-1989018 结构：NPN集电极-发射极电压15V集电极-基电压30V射极-基极电压5V集电极电流0.05A耗散功率0.4W结温150℃特怔频率平均620MHZ放大倍数：D28-45 E39-60 F54-80 G72-108 H97-146 I132-198三极管85508550是一种常用的普通三极管。

常用全系列场效应管MOS管型号参数封装资(精)

场效应管分类型号简介封装 DISCRETEMOS FET 2N7000 60V,0.115A TO-92 DISCRETE MOS FET 2N7002 60V,0.2A SOT-23 DISCRETE MOS FET IRF510A 100V,5.6A TO-220 DISCRETE MOS FET IRF520A 100V,9.2A TO-220 DISCRETE MOS FET IRF530A 100V,14A TO-220 DISCRETE MOS FET IRF540A 100V,28A TO-220 DISCRETE MOS FET IRF610A 200V,3.3A TO-220 DISCRETE MOS FET IRF620A 200V,5A TO-220 DISCRETE MOS FET IRF630A 200V,9A TO-220 DISCRETE MOS FET IRF634A 250V,8.1A TO-220 DISCRETE MOS FET IRF640A 200V,18A TO-220 DISCRETE MOS FET IRF644A 250V,14A TO-220 DISCRETE MOS FET IRF650A 200V,28A TO-220 DISCRETE MOS FET IRF654A 250V,21A TO-220 DISCRETE MOS FET IRF720A 400V,3.3A TO-220 DISCRETE MOS FET IRF730A 400V,5.5A TO-220 DISCRETE MOS FET IRF740A 400V,10A TO-220MOS FET IRF750A 400V,15A TO-220 DISCRETEMOS FET IRF820A 500V,2.5A TO-220 DISCRETE MOS FET IRF830A 500V,4.5A TO-220 DISCRETE MOS FET IRF840A 500V,8A TO-220 DISCRETE MOS FET IRF9520 TO-220 DISCRETEMOS FET IRF9540 TO-220 DISCRETEMOS FET IRF9610 TO-220 DISCRETEMOS FET IRF9620 TO-220 IRF610 200V 3.3A 43W IRF820 500V 2.5A 50WIRF830 500V 4.5A 45WIRF840 500V 8A 125WIRF9620 200V 2A 40WIRFBC40R 600V 6.2A 125W IRFBC30 600V 3.6A 74W IRFPF50 900V 6.8A 150WIRFP450 500V 14A 180WDISCRETEMOS FET IRFP150A 100V,43A TO-3P DISCRETE MOS FET IRFP250A 200V,32A TO-3P DISCRETE MOS FET IRFP450A 500V,14A TO-3P DISCRETE MOS FET IRFR024A 60V,15A D-PAK DISCRETEMOS FET IRFR120A 100V,8.4A D-PAKMOS FET IRFR214A 250V,2.2A D-PAK DISCRETE MOS FET IRFR220A 200V,4.6A D-PAK DISCRETE MOS FET IRFR224A 250V,3.8A D-PAK DISCRETE MOS FET IRFR310A 400V,1.7A D-PAK DISCRETE MOS FET IRFR9020TF D-PAK DISCRETEMOS FET IRFS540A 100V,17A TO-220F DISCRETE MOS FET IRFS630A 200V,6.5A TO-220F DISCRETE MOS FET IRFS634A 250V,5.8A TO-220F DISCRETE MOS FET IRFS640A 200V,9.8A TO-220F DISCRETE MOS FET IRFS644A 250V,7.9A TO-220F DISCRETE MOS FET IRFS730A 400V,3.9A TO-220F DISCRETE MOS FET IRFS740A 400V,5.7A TO-220F DISCRETE MOS FET IRFS830A 500V,3.1A TO-220F DISCRETE MOS FET IRFS840A 500V,4.6A TO-220F DISCRETE MOS FET IRFS9Z34 -60V,12A TO-220F DISCRETE MOS FET IRFSZ24A 60V,14A TO-220F DISCRETE MOS FET IRFSZ34A 60V,20A TO-220FMOS FET IRFU110A 100V,4.7A I-PAK DISCRETEMOS FET IRFU120A 100V,8.4A I-PAK DISCRETEMOS FET IRFU220A 200V,4.6A I-PAK DISCRETEMOS FET IRFU230A 200V,7.5A I-PAK DISCRETEMOS FET IRFU410A 500V I-PAK DISCRETEMOS FET IRFU420A 500V,2.3A I-PAK DISCRETEMOS FET IRFZ20A TO-220DISCRETEMOS FET IRFZ24A 60V,17A TO-220 DISCRETEMOS FET IRFZ30 TO-220DISCRETEMOS FET IRFZ34A 60V,30A TO-220 DISCRETEMOS FET IRFZ40 TO-220DISCRETEMOS FET IRFZ44A 60V,50A TO-220 DISCRETEMOS FET IRLS530A 100V,10.7A,Logic TO-220F DISCRETE MOS FET IRLSZ14A 60V,8A,Logic TO-220F DISCRETE MOS FET IRLZ24A 60V,17A,Logic TO-220 DISCRETE MOS FET IRLZ44A 60V,50A,Logic TO-220 DISCRETE MOS FET SFP36N03 30V,36A TO-220MOS FET SFP65N06 60V,65A TO-220 DISCRETEMOS FET SFP9540 -100V,17A TO-220 DISCRETEMOS FET SFP9634 -250V,5A TO-220 DISCRETEMOS FET SFP9644 -250V,8.6A TO-220 DISCRETEMOS FET SFP9Z34 -60V,18A TO-220 DISCRETEMOS FET SFR9214 -250V,1.53A D-PAK DISCRETEMOS FET SFR9224 -250V,2.5A D-PAK DISCRETEMOS FET SFR9310 -400V,1.5A D-PAK DISCRETEMOS FET SFS9630 -200V,4.4A TO-220F DISCRETEMOS FET SFS9634 -250V,3.4A TO-220F DISCRETEMOS FET SFU9220 -200V,3.1A I-PAK DISCRETEMOS FET SSD2002 25V N/P Dual 8SOP DISCRETEMOS FET SSD2019 20V P-ch Dual 8SOP DISCRETEMOS FET SSD2101 30V N-ch Single 8SOP DISCRETEMOS FET SSH10N80A 800V,10A TO-3P DISCRETEMOS FET SSH10N90A 900V,10A TO-3P DISCRETEMOS FET SSH5N90A 900V,5A TO-3PDISCRETE MOS FET DISCRETE MOS FET DISCRETE MOS FET DISCRETE MOS FET DISCRETE MOS FET DISCRETE MOS FET DISCRETE MOS FETDISCRETE MOS FET DISCRETE MOS FET DISCRETE MOS FET DISCRETE MOS FET DISCRETE MOS FET DISCRETE MOS FET DISCRETE MOS FET DISCRETE MOS FET DISCRETE MOS FET DISCRETE MOS FET SSP70N10A 100V,55A TO-220 SSP6N60A 600V,6A TO-220 SSP60N06 60V,60A TO-220 SSP5N90A 900V,5A TO-220 SSP4N90AS 900V,4.5A TO-220 SSP4N60AS 600V,4A TO-220 SSP4N60A 600V,4A TO-220 SSP3N90A 900V,3A TO-220 SSP35N03 30V,35A TO-220SSP2N90A 900V,2A TO-220 SSP1N60A 600V,1A TO-220 SSP10N60A 600V,9A TO-220 SSH9N80A 800V,9A TO-3P SSH7N90A 900V,7A TO-3P SSH70N10A 100V,70A TO-3P SSH6N80A 800V,6A TO-3P SSH60N10 TO-3PDISCRETE MOS FET DISCRETE MOS FET DISCRETE MOS FET DISCRETE MOS FET DISCRETE MOS FET DISCRETE MOS FET DISCRETE MOS FET DISCRETE MOS FET DISCRETE MOS FET DISCRETE MOS FET DISCRETE MOS FET DISCRETE MOS FET DISCRETE MOS FET DISCRETE MOS FET DISCRETE MOS FET DISCRETE MOS FET 2SK105 2SK161 2SK192 SSS6N60A 600V, 50V 18V 18V 0.01A 0.25W 0.1A 0.2W 0.1A 0.2W TO-220(F/P SSS5N80A 800V,3A TO-220F SSS4N90AS 900V,2.8A TO-220F SSS4N60AS 600V,2.3A TO-220F SSS4N60AS600V,2.3A TO-220(F/P SSS4N60A 600V,3.5A TO-220(F/P SSS3N90A 900V,2A TO-220F SSS3N80A 800V,2A TO-220F SSS2N60A 600V,1.3A TO-220F SSS10N60A 600V,5.1A TO-220F SSR3055A 60V,8A D-PAK SSR2N60A 600V,1.8A D-PAKSSR1N60A 600V,0.9A D-PAK SSP80N06A 60V,80A TO-220 SSP7N80A 800V,7A TO-220 SSP7N60A 600V,7A TO-2202SK413 2SK418 2SK544 2SK659 2SK701 2SK940 2SK1117 2SK1198 2SK1270 140V 8A 140V 8A 20V 60V 60V 60V 600V 700V 60V 100W 100W 0.02A 0.03W 12A 2A 35W 15W 0.8A 0.9W 6A 2A 2A 100W 35W 10W 75W 83W BUK453. 100A 100V 22A BUK455. 60A 60V 38A IRFBG20，IRFBG30，IRFPG50 IRFPG40 1000V。

IRF场效应管大全

场效应管资料

常用全系列场效应管MOS管型号参数封装资料

常用的P沟道场效应管

BUF634中文资料

IRF634B中文资料

BUF634 中文资料整理 陈亚军

BUF634中文资料

IRF634

常用三极管型号及参数资料

IRF634中文资料

Agilent E3631A-E3634A

BUF634中文资料

常用近500个三极管(MOSFET)中文资料

常用全系列场效应管MOS管型号参数封装资(精)

BUF634 中文资料整理陈亚军