bfr 92p中文资料

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R92产品规格书01

湿度
海拔
工作环境冲击
工作:10-5Biblioteka 0Hz,1Grms,X Y Z Direction Each half hour
冲击跌落
存储: 5-500Hz, 1.57Grms, X Y Z Direction Each one hour 1040mm 符合 ECMA 表准 74, 108 & 109,
R92 PRODUCT SPEC
REVISION/版本尺寸大小重量处理器芯片组触摸屏显示硬盘及规格内存芯片声卡接口显卡 LED 1.0REV(20110110) 285mmx185mmx16mm 小于0.8kg Intel(R) Atom(TM) N455@1.66GHz NM10 多点电容式触摸屏集成显卡，GMA3150 1024*768LED mini-PCIE SSD
ACPI V2.0, 支持 S0，S3，S4，S5 11.1V,2400mAh Micro SD cardreader USB摄像头，30/130万像素 Mini PCI-E 接口，支持 802.11B/G Mini PCI-E 接口+SIM卡座 2个USB2.0接口 1个DC接口支持 Windows XP /Linux/Windows7/Android 2.2 AC 110~240V, DC 19V==2.1A 上盖温度不超过环境温度10℃；下盖温度不超过环境温度20℃；智能风扇控制系统工作:-10°C--40°C 存储 -20°C---60°C 工作: 30%--90% (Non-Condensing) 存储:10%-90%(Non-Condensing) 工作: -200—10000ft 存储: -200—30000ft 工作: Half Sine wave, 10G, 11m/sec 震动存储: Trapezium wave, 100G, 4.7m/sec Half sine wave, 240G, 2m/sec

Q62702-F1062中文资料

2)
Gma
IC = 15 mA, VCE = 8 V, ZS = ZSopt ZL = ZLopt f = 900 MHz f = 1.8 GHz
Transducer gain |S21e|2 11.5 6 13.5 8 -
IC = 15 mA, VCE = 8 V, ZS =ZL= 50 Ω f = 900 MHz f = 1.8 GHz
Package Equivalent Circuit: LBI = LBO = LEI = LEO = LCI = LCO = CBE = CCB = CCE = 84 165 0.85 0.51 0.69 0.61 0 0.49 nH nH nH nH nH nH fF fF fF
Valid up to 6 GHz For examples and ready to use parameters please contact your local Siemens distributor or sales office to obtain a Siemens CD-ROM or see Internet: http://www.siemens.de/Semiconductor/products/35/35.htm
0.90551 12.196 1.2703 0.79584 0.66749 0.32167 0.21451 922.07 0.3 0.75 1.11 300
fA mA Ω V fF V eV K
0.016123 A 0.019729 A
0.024709 fA
0.013277 mA
All parameters are ready to use, no scalling is necessary. Extracted on behalf of SIEMENS Small Signal Semiconductors by: Institut für Mobil-und Satellitenfunktechnik (IMST) © 1996 SIEMENS AG

BFR93P中文资料

I S21e I 2
–
15.8 240
– mV
Vo1 = Vo2 –
IP3
–
30.5
–
dBm
BFR 93P
Total power dissipation Ptot = f (TA*; TS) * Package mounted on alumina
Transition frequency fT = f (IC) VCE = 5 V, f = 200 MHz
S11, S22 = f (f) IC = 20 mA, VCE = 8 V, Z0 = 50 Ω
S12, S21 = f (f) IC = 20 mA, VCE = 8 V, Z0 = 50 Ω
1) 2)
BFR 93P
Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Parameter Symbol min. DC Characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 Collector-base cutoff current VCB = 10 V, IE = 0 VCB = 20 V, IE = 0 Emitter-base cutoff current VEB = 2.5 V, IC = 0 DC current gain IC = 25 mA, VCE = 5 V Collector-emitter saturation voltage IC = 50 mA, IB = 5 mA V(BR)CE0 ICB0 – – IEB0 hFE VCEsat – 30 – – – – 100 0.2 0.05 10 100 – 0.5 – V 15 – – V

BFR106中文资料

September 1995
2
元器件交易网
Philips Semiconductors
Product speciﬁcation
NPN 5 GHz wideband transistor
THERMAL RESISTANCE SYMBOL Rth j-s Note 1. Ts is the temperature at the soldering point of the collector tab. CHARACTERISTICS Tj = 25 °C unless otherwise speciﬁed. SYMBOL ICBO hFE fT Cc Ce Cre GUM F d2 Vo Notes 1. GUM is the maximum unilateral power gain, assuming S12 is zero and G UM S 21 ------------------------------------------------------------- dB. = 10 log 2 2 1 – S 11 1 – S 22
1 Top view
age
BFR106
3
2
MSB003
Fig.1 SOT23.
QUICK REFERENCE DATA SYMBOL VCBO VCEO IC Ptot hFE fT GUM Vo PARAMETER collector-base voltage collector-emitter voltage DC collector current total power dissipation DC current gain transition frequency maximum unilateral power gain output voltage up to Ts = 70 °C; note 1 IC = 50 mA; VCE = 9 V; Tamb = 25 °C IC = 50 mA; VCE = 9 V; f = 500 MHz; Tamb = 25 °C IC = 30 mA; VCE = 6 V; f = 800 MHz; Tamb = 25 °C IC = 50 mA; VCE = 9 V; RL = 75 Ω; Tamb = 25 °C; dim = −60 dB; f(p+q−r) = 793.25 MHz open base CONDITIONS open emitter MIN. − − − − 25 − − − TYP. − − − − 80 5 11.5 350 MAX. 20 15 100 500 − − − − GHz dB mV UNIT V V mA mW

BFP92中文资料

Tamb ≤ 60 °C
Maximum Thermal Resistance
Tamb = 25_C, unless otherwise specified Parameter Test Conditions Junction ambient on glass fibre printed board (25 x 20 x 1.5) mm3 plated with 35mm Cu Symbol RthJA Value 450 Unit K/W
94 9279
13 579
13 653
13 566
3
4
3
4
BFP92A Marking: 92V Plastic case (SOT 143) 1 = Collector, 2 = Emitter, 3 = Base, 4 = Emitter
BFP92AW Marking: W92 Plastic case (SOT 343) 1 = Collector, 2 = Emitter, 3 = Base, 4 = Emitter
Absolute Maximum Ratings
Tamb = 25_C, unless otherwise specified Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Total power dissipation Junction temperature Storage temperature range Test Conditions Symbol VCBO VCEO VEBO IC Ptot Tj Tstg Value 20 15 2 30 200 150 –65 to +150 Unit V V V mA mW °C °C

192P中文资料

CAPACITANCE CHANGE .032" [0.813] diameter (No. 20 AWG) copper-clad steel leadsexcept that .025" [.635] diameter (No. 22 AWG) leads will besupplied on .153" [3.886] and .185" [4.699] diameter units.Document Number: 42024 For technical questions, contact spresale@Document Number: 42024For technical questions, contact spresale@Document Number: 42024For technical questions, contact spresale@Document Number: 42024For technical questions, contact spresale@Legal Disclaimer NoticeVishay Document Number: NoticeSpecifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Vishay for any damages resulting from such improper use or sale.。

Proline Prosonic Flow 92F 产品说明书

This document is an integral part of the following Operating Instructions:Safety InstructionsProducts Solutions ServicesXA00153D/06/EN/04.23-00716294602023-10-01Proline Prosonic Flow 92FEx d version NEPSI Zone 1BA00121D, Proline Prosonic Flow 92F HARTBA00122D, Proline Prosonic Flow 92F PROFIBUS PA BA00128D, Proline Prosonic Flow 92F FOUNDATOION FieldbusContentsAssociated documentation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2Manufacturer’s certificates. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2Description of the measuring system . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2Order code. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2General warnings. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3Installation instructions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3Compact version temperature table. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .4Remote version temperature table. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .4Design of measuring system. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .4Potential matching. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .5Cable entries. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .5Connecting cable specifications remote version. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .5Electrical connections . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .5Terminal assignment and connection data. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .6Service connector. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .6XA00153D Proline Prosonic Flow 92F2Endress+HauserAssociated documentationFor an overview of the scope of the associated Technical Documentation, refer to the following::•Device Viewer: (/deviceviewer): Enter serial number from nameplate.•Endress+Hauser Operations App: Enter serial number from nameplate or scan matrix code on nameplate.Additional documentation:Please note the documentation associated with the device.Manufacturer’s certificates NEPSI certificates of conformity Certification numbers:Affixing the certificate number certifies conformity with the with the following standards:Description of the measuring systemThe measuring system consists of a transmitter and a sensor. Two versions are available:•Compact version: The transmitter and sensor form a mechanical unit.•Remote version: The transmitter and sensor are mounted separate from one another and interconnected by means of a connecting cable.Order codeThe order code is indicated on the nameplate, which is affixed to the device in such a way that it is clearly visible.Additional information on the nameplate is provided in the associated Operating Instructions.Structure of the order code :Document type ContentsDocumentation code BrochureExplosion ProtectionCP00021Z/11•GYJ21.1231X•GB/T 3836.1 – 2021•GB/T 3836.2 – 2021•GB/T 3836.4 – 2021P R O S O N I C F L O W92***–************Item No.:1Instrument Family 2Electronics 3Sensor4 to Nominal Diameter 6Hyphen 7Type8Measuring Tube Material 9Process Connection 10Calibration11Additional Test, certificate 12Approval 13Version14Cable, Remote Version 15Cable Entry 16Display; Operating17Adjustment; Software Feature 18Output, InputProline Prosonic Flow 92FXA00153DEndress+Hauser 3Sensor (Item No. 3 in order code)Approval (Item No. 12 in order code)Output, input (Item No. 18 in order code)!Note!A detailed explanation of these values with regard to the inputs and outputs available, as well as a description of the associated terminal assignments and connection data is provided on → 4 onwards.General warnings•For installation, use and maintenance of the flow meter, the instruction manual and the following standards shall be observed:–GB/T 3836.13-2021 "Explosive atmospheres- Part 13:Equipment repair,overhaul,reclamation and modification"–GB/T 3836.15-2017 "Explosive atmospheres- Part 15:Electrical installations design, selection and erection"–GB/T 3836.16-2022 "Explosive atmospheres- Part 16:Electrical installations inspection and maintenance"–GB/T 3836.18-2017 "Explosive atmospheres- Part 18:Intrinsically safe electrical systems"–GB50257-2014 "Code for construction and acceptance of electric equipment on fire and device for explosion hazard electrical installation engineering"•Mounting, electrical installation, commissioning and maintenance of the devices may only be per-formed by technical staff trained in the area of explosion protection.•Compliance with all of the technical data of the device (see nameplate) is mandatory.•The connection compartment of the transmitter housing may only be opened when the unit is de-energized or if an explosive atmosphere is not present.•The device must be integrated into the potential equalization system. Potential must be equalized along the intrinsically safe sensor circuits. Further information can be found in the “Potential matching” chapter on → 5.•The connection compartment Prosonic Flow 92**-*****K****** may only be opened in anEx atmosphere when the device is de-energized (and after waiting 6 minutes after switching off the power supply).Installation instructions•If the active intrinsically safe communication circuits are fed into areas that require zone 1 apparatus, the connected apparatus must be tested and certified accordingly.•The cable entries and openings not used must be sealed tight with suitable components.•The measuring device must only be used in the permitted temperature class. The values of the individual temperature classes can be found in the temperature tables on → 4.•The manufacturer’s specifications for all devices connected to the intrinsically save circuits must be taken into consideration.•To rotate the transmitter housing, please follow the same procedure as for non-Ex versions. The transmitter housing may also be rotated during operation.•The continuous service temperature of the cable must correspond at least to the temperature range of –40 °C to +10 °C above the ambient temperature present (–40 °C to (T a +10 °C)).•The devices may only be used for fluids against which the wetted materials are sufficiently resistant.*Sensor F Sensor FXonly transmitter (as spare part)*Housing/design Explosion protection KCompactEx db[ia Ga] IIC T* Gb Remote, transmitter Ex db[ia Ga] IIC T* Gb Remote, sensorEx ia IIC T* Gb*Temperature marking (T*)A, W T1…T6H, KT1…T4XA00153D Proline Prosonic Flow 92F4Endress+Hauser•Only use cable entries that have separate certification (Ex d IIC) which are suitable for an operating temperature up to 80 °C. When using conduit entries, the associated sealing facilities must be mounted directly to the housing.•The service connector may not be connected in a potentially explosive atmosphere.Compact version temperature table Medium temperature range T med [°C] depending on the device version (→ 2) and the ambient temperature range T a :Remote version temperature tableSensorMedium temperature range T med [°C] depending on the device version (→ 2) and the ambient temperature range T a :TransmitterAmbient temperature range Ta [°C] depending on the device version (→ 2):Design of measuring systemCompact/remote version designT a [°C]T medT6(85 °C)T5(100 °C)T4(135 °C)T3(200 °C)T2(300 °C)T1(450 °C)92F**-*****K*****A/W –40 to +40–40 to +80–40 to +95–40 to +130–40 to +195–40 to +200–40 to +200–40 to +55––40 to +60––92F**-*****K*****H/K –40 to +60–––40 to +130–40 to +195–40 to +200–40 to +200T a [°C]T medT6(85 °C)T5(100 °C)T4(135 °C)T3(200 °C)T2(300 °C)T1(450 °C)92F**-*****K*****A/W –40 to +60–40 to +80–40 to +95–40 to +130–40 to +195–40 to +200–40 to +200–40 to +80––92F**-*****K*****H/K–40 to +80–––40 to +130–40 to +195–40 to +200–40 to +200T medT6(85 °C)T5(100 °C)T4(135 °C)T3(200 °C)T2(300 °C)T1(450 °C)92F**-*****K*****A/W –40 to +40–40 to +55–40 to +60–40 to +60 –40 to +60 –40 to +6092F**-*****K*****H/K–––40 to +60–40 to +60–40 to +60–40 to +601A0004031A Transmitter housing (compact version)B Transmitter housing (remote version)C Sensor connection housing (remote version)D Transmitter housing side view (compact/remote version)a Screw terminal for connecting to potential matching systemb Remote version connecting cable → 5c Terminal/electronics compartment cover: view section cable entries → 5d Securing clamp– Terminal assignment and connection data → 6Proline Prosonic Flow 92FXA00153DEndress+Hauser 5Potential matching"Caution!•There must be potential matching along the circuits (inside and outside the hazardous area).•The transmitter must be safely included in the potential matching system by means of the screw ter-minal on the outside of the transmitter housing or by means of the corresponding ground terminal in the connection compartment.•Alternatively, the sensor and the transmitter (compact version) or the connection housing of the sensor can be included in the potential matching system by means of the pipeline if a ground connection, performed as per the specifications, is ensured.Cable entriesCable entries for the connection compartment (Ex d version):Thread for cable entry M20x1.5 or ½”-NPT or G ½”, as required. Ensure that the Ex d cable glands/ entries are secured against self-locking and the associated seals are arranged directly on the housing.Connecting cable specifications remote versionThe sensor cable connection between the sensor and the transmitter has Ex ia explosion protection. The maximum capacitance per unit length of the cable connection is 1mF/km.The maximum inductance of the cable is 1 mH/km.The cable supplied by Endress+Hauser (max. 30 m) complies with these values.Electrical connections Terminal/electronics compartment cover (terminal assignment, see tables below)e Service connector → 6fHART ground terminal: if the potential matching is routed via the cable and if two cables are used, both cables must be connected to the potential matching system if a connection is not already established externally. PROFIBUS PA and FOUNDATION Fieldbus: between the stripped fieldbus cable and the ground terminal, the cable shielding must not exceed 5 mm in lengthgHART (→ 2): cable for supply voltage and/or pulse output HART (→ 3): cable for supply voltagePFM (→ 4): Optional pulse/frequency output, can also be operated as a status output (not for PROFIBUS PA and FOUNDATION FieldbusPROFIBUS PA (→ 5): cable of input and output circuitsFOUNDATION Fieldbus (→ 6): cable of input and output circuitshOptional pulse/frequency output, can also be operated as a status output (not for PROFIBUS PA and FOUNDATION Fieldbus)!Note!PFM output (pulse/frequency modulation): connection as illustrated in → 4 (only together with flow computer RMC or RMS 621).XA00153D Proline Prosonic Flow 92F6Endress+HauserTerminal assignment and connection dataThe terminal assignment and the connection data for the supply voltage are identical for all devices, regardless of the device version (order code).!Note!A graphic illustration of the electrical connections is provided on → 5.Terminal assignment /connection dataService connectorThe service connector (for connection → 2 to → 6, e) is only used to connect service interfaces approved by Endress+Hauser.#Warning!The service connector may not be connected in a potentially explosive atmosphere.Terminals1 (+)2 (–)3 (+)4 (–)Prosonic 92F**-***********A Prosonic 92F**-***********WTerminal designation Transmitter power supply /4 to 20 mA HART Optionalpulse/status output Safety relatedvalues≤ 35 V (U max = 253 V)≤ 35 V (U max = 253 V)Terminals1 (+)2 (–)Prosonic 92F**-***********HTerminal designation PROFIBUS PA Safety relatedvaluesU = 35 V (U max = 253 V)Terminals1 (+)2 (–)Prosonic 92F**-***********KTerminal designation FOUNDATION FieldbusSafety relatedvaluesU = 35 V (U max = 253 V)Proline Prosonic Flow 92F XA00153D Endress+Hauser7。

GX4201-CDA中文资料

Frequency (MHz)
Frequency (MHz)
Fig. 3 Gain vs Frequency
Fig. 4 Off Isolation vs Frequency
continued over
3
510 - 74 - 5
Input Cap. (pF)
1.8 1.7 1.6 1.5 1.4 1.3 1.2
PARAMETER Supply Voltage DC SUPPLY Supply Current (not including external current load) Analog Output Voltage Swing STATIC Analog Input Bias Current Output Offset Voltage
GX4201 Wideband, Monolithic 1x1 Video Crosspoint Switch
DATA SHEET
FEATURES • -3 dB bandwidth, 300 MHz with CL = 0 pF • off isolation at 100 MHz, 80 dB • differential phase and gain at 4.43 MHz, 0.01° & 0.02% • 800 µW disabled power consumption • input signal levels from -2 V to +3 V • logic input compatible with TTL and 5 V CMOS • open collector TALLY output FUNCTIONAL BLOCK DIAGRAM
Japan Branch: B-201 Miyamae Village, 2-10-42, Miyamae, Suginami-ku, Tokyo 168, Japan tel. (03) 3247-8838 fax (03) 3247-8839

BFP450GEG中文资料

NPN Silicon RF Transistor• For medium power amplifiers• Compression point P-1dB = +19 dBm at 1.8 GHzmaximum available gain G ma = 15.5 dB at 1.8 GHzNoise figure F = 1.25 dB at 1.8 GHz• Transition frequency f T = 24 GHz• Gold metallization for high reliability• SIEGET 25 GHz f T - Line• Pb-free (RoHS compliant) package1)•Qualified according AEC Q101ESD (E lectro s tatic d ischarge) sensitive device, observe handling precaution!Type Marking Pin Configuration Package BFP450ANs1=B2=E3=C4=E--SOT343 Maximum RatingsParameter Symbol Value UnitCollector-emitter voltage T A > 0 °CT A≤ 0 °C V CEO4.54.1VCollector-emitter voltage V CES15Collector-base voltage V CBO15Emitter-base voltage V EBO 1.5Collector current I C100mA Base current I B10Total power dissipation2)T S≤ 96 °CP tot450mWJunction temperature T j150°C Ambient temperature T A-65 (150)Storage temperature T stg-65 (150)1Pb-containing package may be available upon special request2T S is measured on the collector lead at the soldering point to the pcbThermal ResistanceParameter Symbol Value Unit Junction - soldering point1)R thJS≤ 120K/WElectrical Characteristics at T A = 25°C, unless otherwise specifiedParameter Symbol Values Unitmin.typ.max.DC CharacteristicsV(BR)CEO 4.55-V Collector-emitter breakdown voltageI C = 1 mA, I B = 0I CES--10µA Collector-emitter cutoff currentV CE = 15 V, V BE = 0Collector-base cutoff currentI CBO--100nA V CB = 5 V, I E = 0I EBO--10µA Emitter-base cutoff currentV EB = 0.5 V, I C = 0DC current gainh FE6095130-I C = 50 mA, V CE = 4 V, pulse measured1For calculation of R thJA please refer to Application Note Thermal ResistanceElectrical Characteristics at T A = 25°C, unless otherwise specifiedParameter Symbol Values Unitmin.typ.max.AC Characteristics (verified by random sampling)f T1824-GHz Transition frequencyI C = 90 mA, V CE = 3 V, f = 1 GHzC cb-0.480.8pF Collector-base capacitanceV CB = 2 V, f = 1 MHz, V BE = 0 ,emitter groundedC ce- 1.2-Collector emitter capacitanceV CE = 2 V, f = 1 MHz, V BE = 0 ,base greundedC eb- 1.75-Emitter-base capacitanceV EB = 0.5 V, f = 1 MHz, V CB = 0 ,collector groundedF- 1.25-dB Noise figureI C = 10 mA, V CE = 2 V, f = 1.8 GHz, Z S = Z SoptG ma-15.5-Power gain, maximum available1)I C = 50 mA, V CE = 2 V, Z S = Z Sopt, Z L = Z Lopt,f = 1.8 GHz|S21|2811.5-dB Insertion power gainV CE = 2 V, I C = 50 mA, f = 1.8 GHz,Z S = Z L = 50 ΩIP3-29-dBm Third order intercept point at output2)V CE = 3 V, I C = 50 mA, f = 1.8 GHz,Z S = Z L = 50 Ω1dB Compression point at outputP-1dB-19-I C = 50 mA, V CE = 3 V, Z S = Z L = 50 Ω,f = 1.8 GHz1G ma = |S21e / S12e| (k-(k²-1)1/2)2IP3 value depends on termination of all intermodulation frequency components.Termination used for this measurement is 50Ω from 0.1 MHz to 6 GHzSPICE Parameter (Gummel-Poon Model, Berkley-SPICE 2G.6 Syntax): Transistor Chip Data:IS =0.13125fA VAF =24.165V NE = 1.5563-VAR =13.461V NC =0.70543-RBM = 2.1659ΩCJE = 3.2276fF TF =7.5068ps ITF =0.017655mA VJC = 1.1487V TR = 2.6912ns MJS =0-XTI =3-BF =76.123-IKF =0.58905ABR =21.254-IKR =0.25878ARB = 5.403ΩRE =0.45346-VJE =0.95292VXTF =0.69972-PTF =0degMJC =0.50644-CJS =0FXTB =0-FC =0.91274NF =0.79652-ISE =28341fANR = 1.2966-ISC =0.012292fAIRB =0.013181mARC =0.50084ΩMJE =0.48672-VTF =0.66148VCJC =1049.5fFXCJC =0.28285-VJS =0.75VEG = 1.11eVTNOM300KC`-E`-dioden Data (Berkley-Spice 1G.6 Syntax): IS = 25 fA; N = 1.05 -, RS = 5 ΩAll parameters are ready to use, no scalling is necessary. Package Equivalent Circuit:L BI =0.31nHL BO =0.63nHL EI=0.2nHL EO =0.05nHL CI =0.29nHL CO =0.68nHC BE =208fFC CB = 3.2fFC CE =213fFValid up to 6GHzThe SOT343 package has two emitter leads. To avoid high complexity to the package equivalentcircuit both leads are combined in one electrical connectionExtracted on behalf of Infineon Technologies AG by: Institut für Mobil- und Satellitentechnik (IMST)For examples and ready to use parameters please contact your local Infineon Technologies distributoror sales office to obtain a InfineonTechnologies CD-ROM or see Internet: http///silicondiscretesFor non-linear simulation:· Use transistor chip parameters in Berkeley SPICE 2G.6 syntax for all simulators.· If you need simulation of the reverse characteristics, add the diode with theC'-E'- diode data between collector and emitter.· Simulation of package is not necessary for frequencies < 100MHz.For higher frequencies add the wiring of package equivalent circuit around thenon-linear transistor and diode model.Note:· This transistor is constructed in a common emitter configuration. This feature causes an additional reverse biased diode between emitter and collector, which does noteffect normal operation.Transistor Schematic DiagramThe common emitter configuration shows the following advantages:· Higher gain because of lower emitter inductance.· Power is dissipated via the grounded emitter leads, because the chip is mountedon copper emitter leadframe.Please note, that the broadest lead is the emitter lead.Common Emitter S- and Noise-parameterFor detailed S- and Noise-parameters please contact your local Infineon Technologies distributor or sales office to obtain a Infineon Technologies Application NotesCD-ROM or see Internet: /silicondiscretesTotal power dissipation P tot = ƒ(T S )Permissible Pulse Load R thJS = ƒ(t p )10 10 10 K/WR t h JSPermissible Pulse Load P totmax /P totDC = ƒ(t p )P t o t m a x /P t o t DCCollector-base capacitance C cb = ƒ(V CB )f = 1MHzC c bTransition frequency f T= ƒ(I C) f = 1 GHzV CE = parameter in VGHz28fTPower gainG ma, G ms, |S21|2 = ƒ(f)V CE = 2 V, I C = 50 mAGPower gain Gma, G ms = ƒ (I C)V CE = 2Vf = parameter in GHzGPower gain G ma, G ms = ƒ (V CE)I C = 50 mAf = parameter in GHzGNoise figure F = ƒ(I C) V CE = 2 V, Z S = Z SoptFNoise figure F = ƒ(I C)V CE= 2 V, f = 1.8 GHzFNoise figureF = ƒ(f)VCE = 2 V, Z S = Z SoptFSource impedance for min.noise figure vs. frequencyV CE = 2 V, I C = 10mA / 50 mA+j50-j50Edition 2006-02-01Published byInfineon Technologies AG81726 München, Germany© Infineon Technologies AG 2007.All Rights Reserved.Attention please!The information given in this dokument shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party.InformationFor further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (). WarningsDue to technical requirements components may contain dangerous substances.For information on the types in question please contact your nearestInfineon Technologies Office.Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure ofsuch components can reasonably be expected to cause the failure of thatlife-support device or system, or to affect the safety or effectiveness of thatdevice or system.Life support devices or systems are intended to be implanted in the human body,or to support and/or maintain and sustain and/or protect human life. If they fail,it is reasonable to assume that the health of the user or other personsmay be endangered.。

BFT92W,115;中文规格书,Datasheet资料

2
45 o
MLB548
1.0
90 o
VCE = 10 V; IC = 15 mA.
Fig.10 Common emitter input reflection coefficient (s11), typical values.
90 o
135 o
45 o
180 o
40 MHz 50 40 30 20 10 3 GHz
Fig.6
Gain as a function of collector current, typical values.
Fig.7
Gain as a function of collector current, typical values.
50 gain (dB) 40 G UM 30 MSG
MLB546
1 C re (pF) 0.8
6 fT (GHz) 4 V CE = 10 V 5V
MLB543
0.6
0.4
2
0.2
0 0 4 8 12 16 20 VCB (V)
0 1 10 I C (mA) 10 2
IC = 0; f = 1 MHz.
f = 500 MHz; Tamb = 25 C.
Fig.4
DISCRETE SEMICONDUCTORS
DATA SHEET
BFT92W PNP 4 GHz wideband transistor
Product specification May 1994
/
NXP Semiconductors
Product specification
0 0 10 20 I C (mA) 30
VCE = 10 V; Tj = 25 C.

MMBF4091;MMBF4092;MMBF4093;PN4091;PN4092;中文规格书,Datasheet资料

Thermal Characteristics
Symbol
PD RθJC RθJA
TA = 25°C unless otherwise noted
Characteristic
Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient PN4091-4093 625 5.0 125 357
VDS(on)
Drain-Source On Voltage
rDS(on)
Drain-Source On Resistance
ID = 6.6 mA, VGS = 0 ID = 4.0 mA, VGS = 0 ID = 2.5 mA, VGS = 0 ID = 1.0 mA, VGS = 0
SMALL-SIGNAL CHARACTERISTICS
NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations
Min
Max
Units
OFF CHARACTERISTICS
V(BR)GSS VGS(off) Gate-Source Breakdown Voltage Gate-Source Cutoff Voltage IG = 1.0 µA, VDS = 0 VDS = 20 V, ID = 1.0 nA 4091 4092 4093 - 40 - 5.0 - 2.0 - 1.0 - 10 - 7.0 - 5.0 - 200 - 400 200 200 200 400 400 400 V V V V pA nA pA pA pA nA nA nA

BFR30中文资料

BFR30; BFR31
MAX. ±25 −25 −25 10 5 250 +150 150 V V V
UNIT
mA mA mW °C °C
VALUE 430
UNIT K/W
handbook, halfpage
300
MDA245
Ptot (mW) 200
100
0 0 40 80 120 200 160 Tamb (°C)
1 Top view 2
handbook, halfpage
BFR30; BFR31
3 d s
g
MAM385
Marking codes: BFR30: M1p. BFR31: M2p.
Fig.1 Simplified outline and symbol.
CAUTION This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B.
BFR30; BFR31
MIN.
MAX. −0.2 10 5 −3 −1.3 −4 −2 −5 −2.5 4 4.5 − − 40 25 20 15 4 4 1.5 1.5 0.5
UNIT nA mA mA V V V V V V mS mS mS mS µS µS µS µS pF pF pF pF µV
QUICK REFERENCE DATA SYMBOL VDS VGSO Ptot IDSS PARAMETER drain-source voltage gate-source voltage total power dissipation drain current BFR30 BFR31 yfs common-source transfer admittance BFR30 BFR31 ID = 1 mA; VDS = 10 V; f = 1 kHz 1 1.5 4 4.5 mS mS open drain Tamb ≤ 40 °C VGS = 0; VDS = 10 V 4 1 10 5 mA mA CONDITIONS − − − MIN. MAX. ±25 −25 250 UNIT V V mW

FKP252中文资料

=(1) (2) (3)Measured between at the root of leads and at the backsideMeasured at the root Measured at the rootFront view Side viewMass: Approx. 2gCAUTION / WARNING●The information in this publication has been carefully checked and is believed to be accurate; however, no responsibility is assumed for inaccuracies.● Sanken reserves the right to make changes without further notice to any products herein in the interest of improvements in the performance, reliability, or manufacturability of its products.Before placing an order, Sanken advises its customers to obtain the latest version of the relevant information to verify that the information being relied upon is current.● Application and operation examples described in this catalog are quoted for the sole purpose of reference for the use of the products herein and Sanken can assume no responsibility for any infringement of industrial property rights, intellectual property rights or any other rights of Sanken or any third party which may result from its use.● When using the products herein, the applicability and suitability of such products for the intended purpose or object shall be reviewed at the users’ responsibility.● Although Sanken undertakes to enhance the quality and reliability of its products, the occurrence of failure nd defect of semiconductor products at a certain rate is inevitable. Users of Sanken products are requested to take, at their own risk, preventative measures including safety design of the equipment or systems against any possible injury, death, fires or damages to the society due to device failure or malfunction.● Sanken products listed in this catalog are designed and intended for the use as components in general purpose electronic equipment or apparatus (home appliances, office equipment, telecommunication equipment, measuring equipment, etc.). Before placing an order, the user’s written consent to the specifications is requested.When considering the use of Sanken products in the applications where higher reliability is required (transportation equipment and its control systems, traffic signal control systems or equipment, fire/crime alarm systems, various safety devices, etc.), please contact your nearest Sanken sales representative to discuss and obtain written confirmation of your specifications. The use of Sanken products without the written consent of Sanken in the applications where extremely high reliability is required (aerospace equipment, nuclear power control systems, life support systems, etc.) is strictly prohibited.● Anti radioactive ray design is not considered for the products listed herein.● This publication shall not be reproduced in whole or in part without prior written approval from Sanken.●This is notification that you, as purchaser of the products/technology, are not allowed to perform any of the following:1. Resell or retransfer these products/technology to any party intending to disturb international peace and security.2. Use these products/technology yourself for activities disturbing international peace and security.3. Allow any other party to use these products/technology for activities disturbing international peace and security. Also, as purchaser of these products/technology, you agree to follow the procedures for the export or transfer of these products/technology, under the Foreign Exchange and Foreign Trade Law, when you export or transfer the products/technology abroad.。

MB95F264KPF-G-SNE2;中文规格书,Datasheet资料

Copyright©2008-2011 FUJITSU SEMICONDUCTOR LIMITED All rights reserved 2011.6FUJITSU SEMICONDUCTORDATA SHEET■DESCRIPTIONMB95260H/270H/280H are series of general-purpose, single-chip microcontrollers. In addition to a compact instruction set, the microcontrollers of these series contain a variety of peripheral resources.■FEATURES•F 2MC-8FX CPU coreInstruction set optimized for controllers •Multiplication and division instructions •16-bit arithmetic operations •Bit test branch instructions•Bit manipulation instructions, etc.Note:F 2MC is the abbreviation of FUJITSU Flexible Microcontroller.•Clock (main OSC clock and sub-OSC clock are only available on MB95F262H/F262K/F263H/F263K/F264H/F264K/F282H/F282K/F283H/F283K/F284H/F284K)•Selectable main clock sourceMain OSC clock (up to 16.25 MHz, maximum machine clock frequency: 8.125 MHz)External clock (up to 32.5 MHz, maximum machine clock frequency: 16.25 MHz)Main CR clock (1/8/10 MHz ±3%, maximum machine clock frequency: 10 MHz)•Selectable subclock source Sub-OSC clock (32.768 kHz)External clock (32.768 kHz)Sub CR clock (T yp: 100 kHz, Min: 50 kHz, Max: 200 kHz)•Timer•8/16-bit composite timer •Time-base timer •Watch prescaler•LIN-UART (only available on MB95F262H/F262K/F263H/F263K/F264H/F264K/F282H/F282K/F283H/F283K/F284H/F284K)•Full duplex double buffer•Capable of clock-synchronized serial data transfer and clock-asynchronized serial data transfer(Continued)DS07–12627–7EMB95260H/270H/280H Series(Continued)•External interrupt•Interrupt by edge detection (rising edge, falling edge, and both edges can be selected)•Can be used to wake up the device from different low power consumption (standby) modes•8/10-bit A/D converter•8-bit or 10-bit resolution can be selected.•Low power consumption (standby) modes•Stop mode•Sleep mode•Watch mode•Time-base timer mode•I/O port (Max: 17) (MB95F262K/F263K/F264K)•General-purpose I/O ports (Max):CMOS I/O: 15, N-ch open drain: 2•I/O port (Max: 16) (MB95F262H/F263H/F264H)•General-purpose I/O ports (Max):CMOS I/O: 15, N-ch open drain: 1•I/O port (Max: 5) (MB95F272K/F273K/F274K)•General-purpose I/O ports (Max):CMOS I/O: 3, N-ch open drain: 2•I/O port (Max: 4)(MB95F272H/F273H/F274H)•General-purpose I/O ports (Max):CMOS I/O: 3, N-ch open drain: 1•I/O port (Max: 13) (MB95F282K/F283K/F284K)•General-purpose I/O ports (Max):CMOS I/O: 11, N-ch open drain: 2•I/O port (Max: 12) (MB95F282H/F283H/F284H)•General-purpose I/O ports (Max):CMOS I/O: 11, N-ch open drain: 1•On-chip debug•1-wire serial control•Serial writing supported (asynchronous mode)•Hardware/software watchdog timer•Built-in hardware watchdog timer•Built-in software watchdog timer•Power-on reset•A power-on reset is generated when the power is switched on.•Low-voltage detection reset circuit•Built-in low-voltage detector•Clock supervisor counter•Built-in clock supervisor counter function•Programmable port input voltage level•CMOS input level / hysteresis input level•Dual operation Flash memory•The program/erase operation and the read operation can be executed in different banks (upper bank/lower bank) simultaneously.•Flash memory security function•Protects the content of the Flash memoryMB95260H/270H/280H Series■PRODUCT LINE-UP•MB95260H Series(Continued)Part numberParameterMB95F262HMB95F263HMB95F264HMB95F262KMB95F263KMB95F264KType Flash memory product Clocksupervisor counterIt supervises the main clock oscillation.Flash memorycapacity8 Kbyte 12 Kbyte 20 Kbyte 8 Kbyte 12 Kbyte 20 KbyteRAM capacity 240 bytes 496 bytes 496 bytes 240 bytes 496 bytes 496 bytes Power-on reset Yes Low-voltagedetection reset No YesReset input Dedicated Selected by softwareCPU functions•Number of basic instructions : 136•Instruction bit length : 8 bits •Instruction length : 1 to 3 bytes•Data bit length : 1, 8 and 16 bits•Minimum instruction execution time : 61.5 ns (machine clock frequency = 16.25 MHz) •Interrupt processing time : 0.6 µs (machine clock frequency = 16.25 MHz) General-purpose I/O•I/O ports (Max):16•CMOS I/O :15•N-ch open drain:1•I/O ports (Max):17•CMOS I/O :15•N-ch open drain:2Time-base timer Interval time: 0.256 ms to 8.3 s (external clock frequency = 4 MHz) Hardware/softwarewatchdog timer •Reset generation cycleMain oscillation clock at 10 MHz: 105 ms (Min)•The sub CR clock can be used as the source clock of the hardware watchdog timer.Wild register It can be used to replace three bytes of data.LIN-UART •A wide range of communication speed can be selected by a dedicated reload timer.•It has a full duplex double buffer.•Clock-synchronized serial data transfer and clock-asynchronized serial data transfer is en-abled.•The LIN function can be used as a LIN master or a LIN slave.8/10-bit A/Dconverter 6 channels 8-bit or 10-bit resolution can be selected.8/16-bitcomposite timer 2 channels•The timer can be configured as an "8-bit timer × 2 channels" or a "16-bit timer × 1 channel".•It has built-in timer function, PWC function, PWM function and input capture function.•Count clock: it can be selected from internal clocks (seven types) and external clocks.•It can output square wave.Externalinterrupt6 channels•Interrupt by edge detection (The rising edge, falling edge, or both edges can be selected.)•It can be used to wake up the device from the standby mode.On-chip debug•1-wire serial control•It supports serial writing. (asynchronous mode)MB95260H/270H/280H Series(Continued)Part numberParameterMB95F262H MB95F263H MB95F264H MB95F262K MB95F263K MB95F264K Watch prescaler Eight different time intervals can be selected.Flash memory •It supports automatic programming, Embedded Algorithm, program/erase/erase-suspend/ erase-resume commands.•It has a flag indicating the completion of the operation of Embedded Algorithm.•Number of program/erase cycles: 100000•Data retention time: 20 years•Flash security feature for protecting the content of the Flash memoryStandby mode Sleep mode, stop mode, watch mode, time-base timer modePackage DIP-24P-M07 LCC-32P-M19 FPT-20P-M09 FPT-20P-M10MB95260H/270H/280H Series •MB95270H SeriesPart numberParameterMB95F272H MB95F273H MB95F274H MB95F272K MB95F273K MB95F274KType Flash memory productClocksupervisorcounterIt supervises the main clock oscillation.Flash memorycapacity8 Kbyte12 Kbyte20 Kbyte8 Kbyte12 Kbyte20 Kbyte RAM capacity240 bytes496 bytes496 bytes240 bytes496 bytes496 bytes Power-on reset YesLow-voltagedetection resetNo YesReset input Dedicated Selected by softwareCPU functions •Number of basic instructions: 136•Instruction bit length: 8 bits•Instruction length: 1 to 3 bytes•Data bit length: 1, 8 and 16 bits•Minimum instruction execution time: 61.5 ns (machine clock frequency = 16.25 MHz)•Interrupt processing time: 0.6 µs (machine clock frequency = 16.25 MHz)General-purpose I/O •I/O ports (Max):4•CMOS I/O:3•N-ch open drain:1•I/O ports (Max):5•CMOS I/O:3•N-ch open drain:2Time-base timer Interval time: 0.256 ms to 8.3 s (external clock frequency = 4 MHz)Hardware/ software watchdog timer •Reset generation cycleMain oscillation clock at 10 MHz: 105 ms (Min)•The sub-internal CR clock can be used as the source clock of the hardware watchdog timer.Wild register It can be used to replace three bytes of data. LIN-UART No LIN-UART8/10-bit A/D converter 2 channels8-bit or 10-bit resolution can be selected.8/16-bit composite timer 1 channel•The timer can be configured as an "8-bit timer × 2 channels" or a "16-bit timer × 1 channel".•It has built-in timer function, PWC function, PWM function and input capture function.•Count clock: it can be selected from internal clocks (seven types) and external clocks.•It can output square wave.External interrupt 2 channels•Interrupt by edge detection (The rising edge, falling edge, or both edges can be selected.)•It can be used to wake up the device from standby modes.On-chip debug •1-wire serial control•It supports serial writing. (asynchronous mode)Watch prescaler Eight different time intervals can be selected.Flash memory •It supports automatic programming, Embedded Algorithm, program/erase/erase-suspend/ erase-resume commands.•It has a flag indicating the completion of the operation of Embedded Algorithm.•Number of program/erase cycles: 100000•Data retention time: 20 years•Flash security feature for protecting the content of the Flash memoryStandby mode Sleep mode, stop mode, watch mode, time-base timer mode Package DIP-8P-M03FPT-8P-M08MB95260H/270H/280H Series•MB95280H Series(Continued)Part numberParameterMB95F282HMB95F283HMB95F284HMB95F282KMB95F283KMB95F284KType Flash memory product Clocksupervisor counterIt supervises the main clock oscillation.Flash memorycapacity8 Kbyte 12 Kbyte 20 Kbyte 8 Kbyte 12 Kbyte 20 KbyteRAM capacity 240 bytes 496 bytes 496 bytes 240 bytes 496 bytes 496 bytes Power-on reset Yes Low-voltagedetection reset No YesReset input Dedicated Selected by softwareCPU functions•Number of basic instructions : 136•Instruction bit length : 8 bits •Instruction length : 1 to 3 bytes•Data bit length : 1, 8 and 16 bits•Minimum instruction execution time : 61.5 ns (machine clock frequency = 16.25 MHz) •Interrupt processing time : 0.6 µs (machine clock frequency = 16.25 MHz) General-purpose I/O•I/O ports (Max):12•CMOS I/O :11•N-ch open drain:1•I/O ports (Max):13•CMOS I/O :11•N-ch open drain:2Time-base timer Interval time: 0.256 ms to 8.3 s (external clock frequency = 4 MHz) Hardware/softwarewatchdog timer •Reset generation cycleMain oscillation clock at 10 MHz: 105 ms (Min)•The sub-internal CR clock can be used as the source clock of the hardware watchdog timer.Wild register It can be used to replace three bytes of data.LIN-UART •A wide range of communication speed can be selected by a dedicated reload timer.•It has a full duplex double buffer.•Clock-synchronized serial data transfer and clock-asynchronized serial data transfer is en-abled.•The LIN function can be used as a LIN master or a LIN slave.8/10-bit A/Dconverter 5 channels 8-bit or 10-bit resolution can be selected.8/16-bitcomposite timer 1 channel•The timer can be configured as an "8-bit timer × 2 channels" or a "16-bit timer × 1 channel".•It has built-in timer function, PWC function, PWM function and input capture function.•Count clock: it can be selected from internal clocks (seven types) and external clocks.•It can output square wave.Externalinterrupt6 channels•Interrupt by edge detection (The rising edge, falling edge, or both edges can be selected.)•It can be used to wake up the device from standby modes.On-chip debug•1-wire serial control•It supports serial writing. (asynchronous mode)MB95260H/270H/280H Series (Continued)Part numberParameterMB95F282H MB95F283H MB95F284H MB95F282K MB95F283K MB95F284K Watch prescaler Eight different time intervals can be selected.Flash memory •It supports automatic programming, Embedded Algorithm, program/erase/erase-suspend/ erase-resume commands.•It has a flag indicating the completion of the operation of Embedded Algorithm.•Number of program/erase cycles: 100000•Data retention time: 20 years•Flash security feature for protecting the content of the Flash memoryStandby mode Sleep mode, stop mode, watch mode, time-base timer modePackage LCC-32P-M19 DIP-16P-M06 FPT-16P-M06MB95260H/270H/280H Series■PACKAGES AND CORRESPONDING PRODUCTSO: Available X: UnavailablePart numberPackage MB95F 262H MB95F 262K MB95F 263H MB95F 263K MB95F 264H MB95F 264K MB95F 272H MB95F 272K MB95F 273H MB95F 273K MB95F 274H MB95F 274KDIP-24P-M07O O O O O O X X X X X X FPT-20P-M09O O O O O O X X X X X X FPT-20P-M10O O O O O O X X X X X X DIP-16P-M06X X X X X X X X X X X X FPT-16P-M06X X X X X X X X X X X X DIP-8P-M03X X X X X X O O O O O O FPT-8P-M08X X X X X X O O O O O O LCC-32P-M19OOOOOOXXXXXXPart numberPackage MB95F 282H MB95F 282K MB95F 283H MB95F 283K MB95F 284H MB95F 284KDIP-24P-M07X X X X X X FPT-20P-M09X X X X X X FPT-20P-M10X X X X X X DIP-16P-M06O O O O O O FPT-16P-M06O O O O O O DIP-8P-M03X X X X X X FPT-8P-M08X X X X X X LCC-32P-M19OOOOOOMB95260H/270H/280H Series■ DIFFERENCES AMONG PRODUCTS AND NOTES ON PRODUCT SELECTION• Current consumptionWhen using the on-chip debug function, take account of the current consumption of flash erase/write.For details of current consumption, see “■ELECTRICAL CHARACTERISTICS”.• PackageFor details of information on each package, see “■PACKAGES AND CORRESPONDING PRODUCTS” and “■PACKAGE DIMENSION”.• Operating voltageThe operating voltage varies, depending on whether the on-chip debug function is used or not.For details of the operating voltage, see “■ELECTRICAL CHARACTERISTICS”.• On-chip debug functionThe on-chip debug function requires that V CC, V SS and 1 serial-wire be connected to an evaluation tool. In addition, if the Flash memory data has to be updated, the PF2/RST pin must also be connected to the same evaluation tool.MB95260H/270H/280H Series(Continued)分销商库存信息: FUJITSUMB95F264KPF-G-SNE2。

BFR92

6
MEA465
MEA424
F (dB)
handbook, halfpage
5
5
F (dB) 4
4 3 3 2 2 1
1
0 10 –1
1
f (GHz)
0 10 0 5 10 15 I C (mA) 20
IC = 2 mA; VCE = 10 V; Tamb = 25 °C; Zs = opt.
VCE = 10 V; f = 500 MHz; Tamb = 25 °C; Zs = opt.
3. dim = −60 dB (DIN 45004B); IC = 14 mA; VCE = 10 V; RL = 75 Ω; Tamb = 25 °C; Vp = Vo at dim = −60 dB; fp = 495.25 MHz; Vq = Vo −6 dB; fq = 503.25 MHz; Vr = Vo −6 dB; fr = 505.25 MHz; measured at f(p+q−r) = 493.25 MHz.
Fig.2 Intermodulation distortirating curve.
handbook, halfpage
120
MCD074
MEA428
handbook, halfpage
1
Cc (pF)
h FE 80
0.8
0.6
0.4 40 0.2
IC = 14 mA; VCE = 10 V; Tamb = 25 °C.
Fig.6
Transition frequency as a function of collector current.
Fig.7 Gain as a function of frequency.

BFT92W中文资料

BFT92W中文资料DATA SHEETProduct speci?cationFile under Discrete Semiconductors, SC14May 1994DISCRETE SEMICONDUCTORSPhilips SemiconductorsBFT92WPNP 4 GHz wideband transistorPNP 4 GHz wideband transistorBFT92WFEATURES ?High power gainGold metallization ensures excellent reliability ?SOT323 (S-mini) package.APPLICATIONIt is intended as a general purpose transistor for wideband applications up to 2GHz.DESCRIPTIONSilicon PNP transistor in a plastic,SOT323 (S-mini) package. TheBFT92W uses the same crystal as the SOT23 version, BFT92.PINNING PIN DESCRIPTION1base 2emitter 3collectorMarking code : W1.Fig.1 SOT323.handbook, 2 columns312MBC870Top viewQUICK REFERENCE DATA Note1.T s is the temperature at the soldering point of the collector pin.SYMBOL PARAMETERCONDITIONSMIN.TYP .MAX.UNITV CBO collector-base voltage open emitter 20V V CEO collector-emitter voltage open base15V I C collector current (DC)35mA P tot total power dissipation up to T s =93°C; note 1??300mW h FE DC current gain I C =?15mA; V CE =?10V 2050?C re feedback capacitance I C =0; V CB =?10V; f =1MHz ?0.5?pF f T transition frequencyI C =?15mA; V CE =?10V;f =500MHz4?GHz G UM maximum unilateral power gain I C =?15mA; V CE =?10V;f =500MHz; T amb =25°C ?17?dB F noise ?gure I C =?5mA; V CE =?10V;f =500MHz2.5?dB T j junction temperature150°CPNP 4 GHz wideband transistorBFT92WLIMITING VALUESIn accordance with the Absolute Maximum Rating System (IEC 134).THERMAL CHARACTERISTICS Note to the “Limitingvalues” and “Thermal characteristics”1.T s is the temperature at the soldering point of the collector pin.CHARACTERISTICS T j =25°C (unless otherwise speci?ed).Note1.G UM is the maximum unilateral power gain, assuming s 12 is zero.SYMBOL PARAMETERCONDITIONSMIN.MAX.UNITV CBO collector-base voltage open emitter ??20V V CEO collector-emitter voltage open base ??15V V EBO emitter-base voltage open collector2VI C collector current (DC)??25mA P tot total power dissipation up to T s =93°C; note 1300mW T stg storage temperature ?65+150°C T jjunction temperature150°CSYMBOL PARAMETERCONDITIONSVALUE UNIT R th j-sthermal resistance from junction to soldering pointup to T s =93°C; note 1190K/WSYMBOL PARAMETERCONDITIONSMIN.TYP .MAX.UNIT I CBO collector cut-off current I E =0; V CB=?10V 50nAh FE DC current gain I C =?15mA; V CE =?10V 2050?f T transition frequency I C =?15mA; V CE =?10V;f =500MHz; T amb =25°C ?4?GHz C c collector capacitance I E =i e =0; V CB =?10V;f =1MHz0.65?pF C e emitter capacitance I C =i c =0; V EB =?0.5V;f =1MHz0.75?pF C re feedback capacitanceI C =0; V CB =?10V;f =1MHz0.5?pF G UMmaximum unilateral power gain;note 1I C =?15mA; V CE =?10V;f =500MHz; T amb =25°C ?17?dB I C =?15mA; V CE =?10V;f =1GHz; T amb =25°C11?dB Fnoise ?gureΓs =Γopt ; I C =?5mA;V CE =?10V; f =500MHz ? 2.5?dB Γs =Γopt ; I C =?5mA;V CE =?10V; f =1GHz3?dBG UM10s 2121s 112–()1s 222–()------------------------------------------------------------dB.log =PNP 4 GHz wideband transistor BFT92WFig.2 Power derating curve.0501002002000MLB540150T ( C)o sP tot (mW)300400100Fig.3DC current gain as a function of collector current, typical values.V CE =?10V; T j =25°C.6040201020MLB54130I (mA)CFEh Fig.4Feedback capacitance as a function of collector-base voltage, typical values.I C =0; f =1MHz.01020MLB54248V (V)CBC re (pF)0.80.60.40.21216Fig.5Transition frequency as a function of collector current, typical values.f =500MHz; T amb =25°C.420MLB5436f (GHz)102101T I (mA)CV =CE 10 V 5 VPNP 4 GHz wideband transistor BFT92WFig.6Gain as a function of collector current,typical values.f =500MHz; V CE =?10V.MSG = maximum stable gain.03020101020MLB54430gain (dB)I (mA)CG UMMSG Fig.7Gain as a function of collector current,typical values.f =1GHz; V CE =?10V.MSG = maximum stable gain.03020101020MLB54530gain (dB)I (mA)CMSGG UMFig.8Gain as a function of frequency,typical values.I C =?5mA; V CE =?10 V.MSG = maximum stable gain.50010MLB54610210310410203040gain (dB)f (MHz)G UM MSGG maxFig.9Gain as a function of frequency,typical values.I C =?15mA; V CE =?10V.MSG = maximum stable gain.50010MLB54710210310410203040gain (dB)f (MHz)G UM MSGG maxPNP 4 GHz wideband transistor BFT92WV CE =?10V; I C =?15mA.Fig.10 Common emitter input reflection coefficient (s 11), typical values.MLB5480o0.20.60.40.81.01.045o90o135o180o90o 135o5210.50.20.20.51250.21253 GHz40 MHz0.5V CE =?10V; I C =?15mA.Fig.11 Common emitter forward transmission coefficient (s 21), typical values.MLB5490o90o135o 180o90o5040301045o135o 45o40 MHz3 GHzPNP 4 GHz wideband transistor BFT92WV CE =?10V; I C =?15mA.Fig.12 Common emitter reverse transmission coefficient (s 12), typical values.MLB5500o90o135o180o90o0.50.40.30.20.145o135o 45o40 MHz3 GHzFig.13 Common emitter output reflection coefficient (s 22), typical values.V CE =?10V; I C =?15mA.MLB5510o0.20.60.40.81.01.045o90o180o45o90o 135o5210.50.200.20.51250.20.512540 MHz3 GHzPNP 4 GHz wideband transistor BFT92WFig.14Minimum noise figure as a function ofcollector current, typical values.V CE =?10V.handbook, halfpage242010MLB5521016I (mA)C1 GHz 500 MHzFig.15Minimum noise figure as a function of frequency, typical values.V CE =?10V.handbook, halfpage42MLB5536F (dB)f (MHz)104103102I =15 mA 10 mA 5 mA 2 mACPNP 4 GHz wideband transistor BFT92WFig.16 Common emitter noise figure circles, typical values.f =500MHz; V CE =?10V; I C =?5mA; Z o =50?.MLB5540o0.20.60.40.81.01.045o90o135o180o45o90o 135o210.50.20.20.5125125F = 3 dBF = 4 dB F = 5 dB0.20.5minF = 2.5 dB optΓFig.17 Common emitter noise figure circles, typical values.f =1GHz; V CE =?10V; I C =?5mA; Z o =50?.MLB5550o0.20.60.40.81.01.045o90o135o180o45o90o 135o5210.200.20.51251F = 3.5 dB F = 4 dBF = 5 dB0.2minoptΓF = 3 dB 250.5PNP 4 GHz wideband transistor BFT92WSPICE parameters for the BFT92W crystalSEQUENCE No.PARAMETER VALUE UNIT1IS437.5aA2BF33.58?3NF 1.009?4VAF23.39V 5IKF99.53mA 6ISE87.05fA 7NE 1.943?8BR 4.947?9NR 1.002?10VAR 3.903V 11IKR 5.281mA 12ISC35.88fA 13NC 1.393?14RB 5.000?15IRB 1.000μA 16RBM 5.000?17RE 1.000?18RC 10.00?19(1)XTB0.000?20(1)EG 1.110eV 21(1)XTI 3.000?22CJE746.6fF 23VJE600.0mV 24MJE0.357?25TF17.49ps 26XTF 1.354?27VTF155.6mV 28ITF 1.000mA 29PTF45.00deg 30CJC937.1fF 31VJC396.4mV32MJC0.200?33XCJC0.106?34TR8.422ns 35(1)CJS0.000F Note1.These parameters have not been extracted, thedefault values are shown.List of components (see Fig.18)36(1)VJS750.0mV 37(1)MJS0.000?38FC0.768?DESIGNATION VALUE UNITC be2fFC cb100fFC ce100fFL10.34nHL20.10nHL30.34nHL B0.60nHL E0.60nH SEQUENCE No.PARAMETER VALUE UNIT QL B=50; QL E=50; QL B,E(f)=QL B,E√(f/f c);f c=scaling frequency=1GHz.Fig.18 Package equivalent circuit SOT323. handbook, halfpageMBC964 BECB'C'E'L BL EL3L1L2C cbC be ceCPNP 4 GHz wideband transistorBFT92WPACKAGE OUTLINEDEFINITIONS LIFE SUPPORT APPLICATIONSThese products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.Data sheet status Objective speci?cation This data sheet contains target or goal speci?cations for product development.Preliminary speci?cation This data sheet contains preliminary data; supplementary data may be published later.Product speci?cation This data sheet contains ?nal product speci?cations.Limiting valuesLimiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the speci?cation is not implied. Exposure to limiting values for extended periods may affect device reliability.Application informationWhere application information is given, it is advisory and does not form part of the speci?cation.Dimensions in mm.Fig.19 SOT323.handbook, full pagewidth0.250.10B0.20.2AAM M 1230.651.32.21.80.400.30B1.351.152.22.0detail XX1.1max0.10.01.00.80.30.10.2MBC871Philips SemiconductorsPhilips Semiconductors – a worldwide companyArgentina: IEROD, Av. Juramento 1992 - 14.b, (1428)BUENOS AIRES, Tel. (541)786 7633, Fax. (541)786 9367Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113, Tel. (02)805 4455, Fax. (02)805 4466Austria: Triester Str. 64, A-1101 WIEN, P.O. Box 213,Tel. (01)60 101-1236, Fax. (01)60 101-1211Belgium: Postbus 90050, 5600 PB EINDHOVEN, The Netherlands,Tel. (31)40 783 749, Fax. (31)40 788 399Brazil: Rua do Rocio 220 - 5th floor, Suite 51,CEP: 04552-903-S?O PAULO-SP, Brazil.P.O. Box 7383 (01064-970).Tel. (011)821-2327, Fax. (011)829-1849Canada: INTEGRATED CIRCUITS:Tel. (800)234-7381, Fax. (708)296-8556DISCRETE SEMICONDUCTORS: 601 Milner Ave,SCARBOROUGH, ONTARIO, M1B 1M8,Tel. (0416)292 5161 ext. 2336, Fax. (0416)292 4477Chile: Av. Santa Maria 0760, SANTIAGO,Tel. (02)773 816, Fax. (02)777 6730Colombia: IPRELENSO LTDA, Carrera 21 No. 56-17,77621 BOGOTA, Tel. (571)249 7624/(571)217 4609,Fax. (571)217 4549Denmark: Prags Boulevard 80, PB 1919, DK-2300 COPENHAGEN S,Tel. (032)88 2636, Fax. (031)57 1949Finland: Sinikalliontie 3, FIN-02630 ESPOO,Tel. (9)0-50261, Fax. (9)0-520971France: 4 Rue du Port-aux-Vins, BP317,92156 SURESNES Cedex,Tel. (01)4099 6161, Fax. (01)4099 6427Germany: PHILIPS COMPONENTS UB der Philips G.m.b.H.,P.O. Box 10 63 23, 20043 HAMBURG,Tel. (040)3296-0, Fax. (040)3296 213.Greece: No. 15, 25th March Street, GR 17778 TAVROS,Tel. (01)4894 339/4894 911, Fax. (01)4814 240Hong Kong: PHILIPS HONG KONG Ltd., Components Div.,6/F Philips Ind. Bldg., 24-28 Kung Yip St., KWAI CHUNG, N.T.,Tel. (852)424 5121, Fax. (852)428 6729India: Philips INDIA Ltd, Components Dept,Shivsagar Estate, A Block ,Dr. Annie Besant Rd. Worli, Bombay 400 018Tel. (022)4938 541, Fax. (022)4938 722Indonesia: Philips House, Jalan H.R. Rasuna Said Kav. 3-4,P.O. Box 4252, JAKARTA 12950,Tel. (021)5201 122, Fax. (021)5205 189Ireland: Newstead, Clonskeagh, DUBLIN 14,Tel. (01)640 000, Fax. (01)640 200Italy: PHILIPS COMPONENTS S.r.l.,Viale F. Testi, 327, 20162 MILANO,Tel. (02)6752.3302, Fax. (02)6752 3300.Japan:Philips Bldg 13-37,Kohnan 2-chome, Minato-ku, TOKYO 108,Tel. (03)3740 5028, Fax. (03)3740 0580Korea: (Republic of) Philips House, 260-199 Itaewon-dong, Yongsan-ku, SEOUL, Tel. (02)794-5011, Fax. (02)798-8022Malaysia: No. 76 Jalan Universiti, 46200 PETALING JAYA, SELANGOR, Tel. (03)750 5214, Fax. (03)757 4880Mexico: Philips Components, 5900 Gateway East, Suite 200,EL PASO, TX 79905, Tel. 9-5(800)234-7381, Fax. (708)296-8556Netherlands: Postbus 90050, 5600 PB EINDHOVEN, Bldg. VB Tel. (040)783749, Fax. (040)788399New Zealand: 2 Wagener Place, C.P.O. Box 1041, AUCKLAND, Tel. (09)849-4160, Fax. (09)849-7811Norway: Box 1, Manglerud 0612, OSLO,Tel. (022)74 8000, Fax. (022)74 8341Pakistan: Philips Electrical Industries of Pakistan Ltd.,Exchange Bldg. ST-2/A, Block 9, KDA Scheme 5, Clifton,KARACHI 75600, Tel. (021)587 4641-49,Fax. (021)577035/5874546.Philippines: PHILIPS SEMICONDUCTORS PHILIPPINES Inc,106 Valero St. Salcedo Village, P.O. Box 2108 MCC, MAKATI,Metro MANILA, Tel. (02)810 0161, Fax. (02)817 3474Portugal: PHILIPS PORTUGUESA, S.A.,Rua dr. António Loureiro Borges 5, Arquiparque - Miraflores,Apartado 300, 2795 LINDA-A-VELHA,Tel. (01)14163160/4163333, Fax.(01)14163174/4163366.Singapore: Lorong 1, Toa Payoh, SINGAPORE 1231,Tel. (65)350 2000, Fax. (65)251 6500South Africa: S.A. PHILIPS Pty Ltd., Components Division,195-215 Main Road Martindale, 2092 JOHANNESBURG,P.O. Box 7430 Johannesburg 2000,Tel. (011)470-5911, Fax. (011)470-5494.Spain: Balmes 22, 08007 BARCELONA,Tel. (03)301 6312, Fax. (03)301 42 43Sweden: Kottbygatan 7, Akalla. S-164 85 STOCKHOLM,Tel. (0)8-632 2000, Fax. (0)8-632 2745Switzerland: Allmendstrasse 140, CH-8027 ZüRICH,Tel. (01)488 2211, Fax. (01)481 77 30Taiwan: PHILIPS TAIWAN Ltd., 23-30F, 66, Chung Hsiao West Road, Sec. 1. Taipeh, Taiwan ROC, P.O. Box 22978,TAIPEI 100, Tel. (02)388 7666, Fax. (02)382 4382.Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd.,209/2 Sanpavuth-Bangna Road Prakanong,Bangkok 10260, THAILAND,Tel. (662)398-0141, Fax. (662)398-3319.Turkey:Talatpasa Cad. No. 5, 80640 GüLTEPE/ISTANBUL,Tel. (0212)279 2770, Fax. (0212)269 3094United Kingdom: Philips Semiconductors Limited, P.O. Box 65, Philips House, Torrington Place, LONDON, WC1E 7HD,Tel. (071)436 41 44, Fax. (071)323 03 42United States:INTEGRATED CIRCUITS:811 East Arques Avenue, SUNNYVALE, CA 94088-3409,Tel. (800)234-7381, Fax. (708)296-8556DISCRETE SEMICONDUCTORS: 2001 West Blue Heron Blvd.,P.O. Box 10330, RIVIERA BEACH, FLORIDA 33404, Tel. (800)447-3762 and (407)881-3200, Fax. (407)881-3300Uruguay: Coronel Mora 433, MONTEVIDEO,Tel. (02)70-4044, Fax. (02)92 0601For all other countries apply to:Philips Semiconductors,International Marketing and Sales, Building BAF-1,P.O. Box 218, 5600 MD, EINDHOVEN, The Netherlands,T elex 35000 phtcnl, Fax. +31-40-724825SCD31Philips Electronics N.V. 1994All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license underpatent- or other industrial or intellectual property rights.Printed in The Netherlands123065/1500/01/pp12Date of release: May 1994Document order number:9397 731 20011。

35RAPC2AV资料

Previous Page | Return to Index | Next Page3.5 mm SINGLE MONO AND STEREO JACKS1. 35RAPC4BV42. 35RAPC2AV3. 35RAPC2BHN24. 35RAPC4BH35. 35RAPC2BV46. 35RAPC2BH3click here to download a schematic drawing(you will need to have Adobe Acrobat installed on your system to do this)click here to download a schematic drawing(you will need to have Adobe Acrobat installed on your system to do this)click here to download a schematic drawing(you will need to have Adobe Acrobat installed on your system to do this)click here to download a schematic drawing(you will need to have Adobe Acrobat installed on your system to do this)APPLICATIONS* Multi-media workstations* Headphones/microphone sets* Interactive TV* Audio* Telecommunications* Medical* Computer* InstrumentationSWITCHCRAFT 3.5 mm JACK PART NUMBERING SYSTEMSeries MountingTypeCircuitryHousingOrientationBushingFootprintDesignation35 3.5 mm RAPCRight-Angle2A SingleClosedH (Horizontal)Board SpaceRequiredGreater ThanAboveBoard Height(RAPC)BlankThreadedBushingBlank See Note1PM PanelMount2B DoubleOpenV (Vertical)Board SpaceRequiredGreater ThanAboveBoard Height(RAPC)NNon-threadedBushing2 See Note 13B SingleOpen +SingleClosedV (Vertical)SolderTerminals ExitHousingOpposite FromBushing (PM)3 See Note 14B DoubleClosedBlank OpenFrame Jack4 See Note 15 See Note 1Notes:1. Footprints are assigned sequentially within a family of jacks.For example, all 35RAPCXXV2 jacks can use the 35RAPC4BV2 footprint independent of whether the bushing is threaded.Not all holes would be used by jacks with 2A, 2B, and 3B circuitry.35RAPCXXV3 jacks require an entirely different PC board layout than 35RAPCXXV2 jacks.Each number designates a different footprint.ORDERING INFORMATIONPart Number Description Height vs.WidthBushing35RAPC2AV mono vertical threaded3 35RAPC2AHN2mono horizontal non-threaded 35RAPC2AHN3mono horizontal non-threaded35RAPC2BHN2stereo horizontal non-threaded 35RAPC2BHN3stereo horizontal non-threaded 35RAPC3BHN2stereo horizontal non-threaded 35RAPC3BHN3stereo horizontal non-threaded 35RAPC4BHN2stereo horizontal non-threaded 35RAPC4BHN3stereo horizontal non-threaded 35RAPC2AH3mono horizontal threaded3 35RAPC2BH3stereo horizontal threaded3 35RAPC3BH3stereo horizontal threaded3 35RAPC4BH3stereo horizontal threaded3 35RAPC2AV4mono vertical threaded3 35RAPC2BV4mono vertical threaded3 35RAPC3BV4stereo vertical threaded3 35RAPC4BV4stereo vertical threaded3 35RAPC2AVN4mono vertical non-threaded 35RAPC2BVN4stereo vertical non-threaded 35RAPC3BVN4stereo vertical non-threaded 35RAPC4BVN4stereo vertical non-threaded Part numbers which include the letter "N" designate non-threaded bushings. Part numbers without the letter "N" designate threaded bushing.1. Order by part number2. Contact Switchcraft for special ordering information3. Mounting hardware included.35RAPC2AV - MONO, VERTICAL, THREADEDMATERIALSCoil Spring: Steel wire.Bushing: Nickel-plated copper alloy.Terminal: Silver-plated copper alloy.Tip Spring: Silver-plated copper alloy.Shunt Terminal: Plated copper alloy.Cover: Thermoplastic, transparent UL 94V-2.Body: Thermoplastic, UL 94V-1 black color.PERFORMANCE SPECIFICATIONSContact Resistance: 20 milliohms maximum.Insulation Resistance: 100 milliohms minimum at 250V DC.Dielectric Withstanding Voltage: 250V AC.Life: 5000 cycles, minimum.Insertion Force: 0.88 pounds - 3.5 pounds.Withdrawal Force: 0.88 pounds - 2.64 pounds.35RAPC4BHN2 - STEREO, HORIZONTAL, NON-THREADED MATERIALSCover: Thermoplastic, UL 94V-1 black color.Shunt Terminals: Silver-plated copper alloy.Ring Spring: Copper alloy.Tip Spring: Special silver plating.Ground Terminal: Plated copper alloy.Metal: Nickel-plated copper alloy.Body: Thermoplastic, UL 94V-0 black color.PERFORMANCE SPECIFICATIONSContact Resistance: 30 milliohms maximum, initial 100 milliohms maximum., after life.Insulation Resistance: 100 megohms mininimum at 500V DC.Dielectric Withstanding Voltage: 500V AC.Life: 5000 cycles, minimum.Insertion Force: 0.88 pounds - 6.6 pounds.Withdrawal Force: 0.88 pounds - 6.6 pounds.35RAPC2BHN2 - STEREO, HORIZONTAL, NON-THREADED MATERIALSCover: Thermoplastic, UL 94V-1 black color.Ring Spring: Copper alloy.Tip Spring: Silver-plated copper alloy.Ground Terminal: Silver-plated copper alloy.Metal: Copper alloy, nickel plating.Body: Thermoplastic, UL 94V-0 black color.PERFORMANCE SPECIFICATIONSContact Resistance: 30 milliohms maximum, initial 100 milliohms maximum, after life.Insulation Resistance: 100 megohms minimum at 500V DC.Dielectric Withstanding Voltage: 500V AC.Life: 5000 cycles, minimum.Insertion Force: 0.88 pounds - 6.6 pounds.Withdrawal Force: 0.88 pounds - 6.6 pounds.35RAPC2BH3 - STEREO, HORIZONTAL, THREADED MATERIALSCoil Springs: Steel wire.Tip Spring: Silver-plated copper alloy.Switchcraft元器件交易网Ring Spring: Silver-plated copper alloy.Ground Terminal: Silver-plated copper alloy.Bushing: Nickel-plated copper alloy.Cover: Thermoplastic, transparent UL 94V-2.Body: Thermoplastic, UL 94V-1 black color.PERFORMANCE SPECIFICATIONSContact Resistance: 20 milliohms maximum, initial 100 milliohms maximum, after life.Insulation Resistance: 100 megohms minimum.Dielectric Withstanding Voltage: 250V AC.Life: 5000 cycles, minimum.Insertion Force: 0.88 lbs. - 3.50 lbs.Withdrawal Force: 0.88 lbs. - 3.10 lbs.35RAPC4BH3 - STEREO, HORIZONTAL, THREADED MATERIALSCoil Springs: Steel wire.Tip Spring: Silver-plated copper alloy.Ring Spring: Silver-plated copper alloy.Contactors: Silver-plated copper alloy.Ground Terminal: Silver-plated copper alloy.Bushing: Nickel-plated copper alloy.Cover: Thermoplastic, transparent UL 94V-2.Body: Thermoplastic, UL 94V-1 black color.PERFORMANCE SPECIFICATIONSContact Resistance: 20 milliohms maximum, initial 100 milliohms maximum, after life.Insulation Resistance: 100 megohms minimum.Dielectric Withstanding Voltage: 250V AC.Life: 5000 cycles, minimum.Insertion Force: 0.88 - 3.5 pounds.Withdrawal Force: 0.88 - 3.1 pounds.35RAPC2BV4 - STEREO, VERTICAL, THREADED MATERIALSCoil Springs: Steel Wire.Ring Spring: Copper alloy strip, tin alloy plating.Ground Terminal: Copper alloy strip, tin alloy plating.Bushing: Nickel-plated copper alloy.Cover: Thermoplastic, UL 94V-0 black color.Body: Thermoplastic, UL 94V-0 black color.PERFORMANCE SPECIFICATIONS Contact Resistance: 20 milliohms maximum,Switchcraft元器件交易网initial 50 milliohms maximum, after life.Insulation Resistance: 50 megohms minimum at 500V DC.Dielectric Withstanding Voltage: 250V AC.Life: 5,000 cycles, minimum.Insertion Force: 0.88 lbs. to 3.50 lbs.Withdrawal Force: 0.88 lbs. to 3.10 lbs.35RAPC4BV4 - STEREO, VERTICAL, THREADED MATERIALSCoil Springs: Steel wire.Shunt Terminals: Copper alloy strip,tin alloy plated.Ring Spring: Copper alloy strip,tin alloy plated.Ground Terminal: Copper alloy strip,tin alloy plated.Bushing: Plated copper alloy.Cover: Thermoplastic, UL 94V-0 black color.Body: Thermoplastic, UL 94V-0 black color.PERFORMANCE SPECIFICATIONSContact Resistance: 20 milliohms maximum, initial 50 milliohms maximum, after life.Insulation Resistance: 50 milliohms minimum at 500V DC.Dielectric Withstanding Voltage: 250V AC.Life: 5000 cycles, minimum.Insertion Force: 0.88 - 3.5 pounds.Withdrawal Force: 0.88 - 3.5 pounds.Previous Page | Return to Index | Next PageTo search a category please click on the corresponding icon:| Connectors | Jacks and Plugs || Patch Panels, Patch Kits & Jackfields | Cable Assemblies and Patch Cords | Switches |Switchcraft元器件交易网All products shown are covered by Switchcraft's limited lifetime warranty.| Switchcraft home |About Us | Products | What's New | Search | Contact UsSwitchcraft元器件交易网。

MKP3V240RLG;MKP3V240G;MKP3V120G;MKP3V120RLG;MKP3V240;中文规格书,Datasheet资料

ITM IH
VTM
Slope = RS
IS
IDRM VS
I(BO)
+ Voltage
VDRM
V(BO)
RS
+
(V(BO) – VS) (IS – I(BO))
/
2
TC, MAXIMUM ALLOWABLE CASE TEMPERATURE (°C)
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 IT(AV), AVERAGE ON-STATE CURRENT (AMPS)
Figure 2. Maximum Ambient Temperature
PAV, MAXIMUM AVERAGE POWER DISSIPATION (WATTS)
xx
= 12 or 24
YY, Y = Year
WW = Work Week
G
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Package
Shipping†
MKP3V120G Axial Lead* 500 Units/Box
Critical Rate−of−Rise of On−State Current, Critical Damped Waveform Circuit (IPK = 130 W, Pulse Width = 10 msec)
di/dt
−
120
−
A/ms
Voltage Current Characteristic of SIDAC (Bidirectional Device)

一、概述机型 ID 号的烧写 - 广电电器网-家电维修、说明 …

一、概述MS48IA系列机型采用以MSTAR公司MSD6I48TXA芯片为平台的机芯方案，支持模拟电视PAL DK/BG/I接收功能于一身，并含有高清多媒体播放（支持RMVB、H.264、MPEG2、A VI…）、网络在线电影播放,天气预报等多项功能，是一款功能丰富的机芯。

MS48IA机芯软件中设计有工厂模式（以下简称P模式）、设计师模式（以下简称D模式）和售后模式（以下简称S模式）。

工厂模式供工厂生产过程中调试使用，生产技术人员应熟知其具体调试项目及调试方法。

设计师模式供研发过程中设计调试使用，生产及售后维护时请勿随意改动其中设置。

售后模式供售后维修时使用。

二、机型ID号的烧写E5200（S12）系列所有机型，软硬件共用同一版本，在主板过机架检查之前，一定需要烧写机型ID号。

具体烧写方法如下：将主板上电，把烧写工具插入VGA口，用工厂命令0x77 Product ID 写入生产所需要的相应的机型号, 写入后重新上电, 保证正确的ID起作用。

此步骤在最前面做, 避免因默认机型号与实际使用的屏参相差较大引起黑屏无法显示的情况发生, 这是非常关键的一步, 如果ID弄错, 将会使软硬件对应不上, 对机器的功能和性能有较大影响。

ID 机型Product ID Bom中编码 Product L32E5200BE V6-PROJECT-ID043 43L37E5200BE V6-PROJECT-ID046 46L40E5200BE V6-PROJECT-ID045 45L42E5200BE V6-PROJECT-ID042 42L46E5200BE V6-PROJECT-ID044 44三、 P模式的调整方法E5200（S12）系列机型使用我司RC200型(普通按键遥控器)遥控器。

在调试工厂菜单时，请使用普通按键型遥控器进行调试。

1、P模式的进入与退出1）开机状态下，选择“设置”→“图像设置”→“对比度”，5秒内按顺序输入密码9735可进入P模式主菜单；2）在D模式主菜单下的“Design mode hotkey”设为“OFF”且工厂模式主菜单下的“Factory hotkey”设为“ON”时，按遥控器上的“OK”可直接进入P模式主菜单；3）按“OK”键可逐级进入子菜单中各项进行调整，按“MENU”键可以返回上一级菜单选项；4）电视机待机后再开机可退出P模式；5）在工厂菜单中执行“SHOP”项操作后可退出工厂菜单；6）在P模式主菜单中设置“Factory hotkey”为OFF，然后退出P模式主菜单。

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Unit
15
V
20
20
2.5
30
mA
4
280
mW
150
°C
-65 ... 150
-65 ... 150
Thermal Resistance Junction - soldering point
RthJS
365
K/W
1TS is measured on the collector lead at the soldering point to the pcb
1
Oct-13-1999
BFR 92P
Electrical Characteristics at TA = 25°C, unless otherwise specified.
Parameter
Symbol
Values
min. typ. max.
DC characteristics
Collector-emitter breakdown voltage IC = 1 mA, IB = 0 Collector-emitter cutoff current VCE = 20 V, VBE = 0 Collector-base cutoff current VCB = 10 V, IE = 0 Emitter-base cutoff current VEB = 2.5 V, IC = 0 DC current gain IC = 15 mA, VCE = 8 V
Ccb
1.3 pF
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.00
4
8
12
16 V
22
VCB
Transition frequency fT = f (IC)
fT
VCE = Parameter
6.0 GHz
5.0
4.5
4.0
5V
3.5
3V
3.0 2V
2.5
2.0
1.5 1V
1.0 0.7V
BFR 92P 3
2 1 VPS05161
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type BFR 92P
Marking GFs
Pin Configuration
1=B
2=E
3=C
Package SOT-23
10 3
Permissible Pulse Load Ptotmax/PtotDC = f (tp)
10 2
Ptotmax / PtotDC
RthJS
K/W 10 2
0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0
-
D=0
0.005
0.01
0.02
10 1
0.05 0.1
0.2
00.0 0.5 1.0 1.5 2.0 2.5 GHz 3.5
f
VCE = Parameter
28
dB IC=15mA
S2 1
22
20
18
16
14
12
10
8
6
4
10V
2
1V
0
0.7V
-20.0 0.5 1.0 1.5 2.0 2.5 GHz 3.5
f
7
Oct-13-1999
RC = 0.13793
CJE = 10.416 fF
TF =
26.796 ps
VJE = 0.70618 V XTF = 0.3817 -
MJE = 0.34686 VTF = 0.32861 V
ITF = 4.4601 mA PTF = 0
deg CJC = 946.47 fF
VJC = 0.84079 V
For examples and ready to use parameters please contact your local Infineon Technologies distributor or sales office to obtain a Infineon Technologies CD-ROM or see Internet: /products/discrete/index.htm
Oct-13-1999
BFR 92P
SPICE Parameters (Gummel-Poon Model, Berkley-SPICE 2G.6 Syntax) :
Transistor Chip Data
IS =
0.1213 fA
VAF = 30
V
BF = IKF =
94.733 0.46227 A
Parameter
Symbol
Values
Unit
min. typ. max.
AC characteristics (verified by random sampling)
Transition frequency IC = 15 mA, VCE = 8 V, f = 500 MHz Collector-base capacitance VCB = 10 V, f = 1 MHz Collector-emitter capacitance VCE = 10 V, f = 1 MHz Emitter-base capacitance VEB = 0.5 V, f = 1 MHz Noise figure IC = 2 mA, VCE = 6 V, ZS = ZSopt , f = 900 MHz
Total power dissipation, TS 48 °C F)
Junction temperature Ambient temperature Storage temperature
Symbol
VCEO VCES VCBO VEBO IC IB Ptot Tj TA Tstg
Value
1996 SIEMENS AG
Package Equivalent Circuit:
LBI =
0.85
nH
LBO = 0.51
nH
LEI =
0.69
nH
LEO = 0.61
nH
LCI =
0
nH
LCO = 0.49
nH
CBE = 73
fF
CCB = 84
fF
CCE = 165
fF
Valid up to 6GHz
NPN Silicon RF Transistor
For broadband amplifiers up to 2 GHz and fast non-saturated switches at collector durrents from 0.5 mA to 20 mA
Complementary type: BFT 92 (PNP)
V(BR)CEO 15
ICES
Hale Waihona Puke -ICBO-
IEBO
-
hFE
40
-
-
-
10
-
100
-
100
100 200
Unit
V µA nA µA -
2
Oct-13-1999
BFR 92P
Electrical Characteristics at TA = 25°C, unless otherwise specified.
Maximum Ratings Parameter Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current
fT
3.5
5
- GHz
Ccb
- 0.38 0.6 pF
Cce
-
0.2
-
Ceb
-
0.7
-
F
dB
-
1.8
-
f = 1.8 GHz
-
2.9
-
Power gain, maximum available F)
IC = 15 mA, VCE = 8 V, ZS = ZSopt, ZL = ZLopt , f = 900 MHz
0.5
0.00
5 10 15 20 25 mA 35
IC
Power Gain Gma, Gms = f(IC)
f = 0.9GHz VCE = Parameter
18 dB
14 12
10V 5V 3V
10
2V
G
8
6
4
2
1V
0
-2
0.7V
-40
5 10 15 20 25 mA 35
IC
Power Gain Gma, Gms = f(IC)
NF = 1.0947 ISE = 129.55 fA
NE = 1.9052 -
BR = 10.729 -
NR = 0.8983 -
VAR = 14.599 V
NC = 1.371
-
RBM = 7.8145
IKR = 0.01
A
RB = 14.998
RE = 0.29088
ISC = 0.75557 fA IRB = 0.01652 mA
Gma
-