Q62702-P1638中文资料

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Q62702-F1062中文资料

2)
Gma
IC = 15 mA, VCE = 8 V, ZS = ZSopt ZL = ZLopt f = 900 MHz f = 1.8 GHz
Transducer gain |S21e|2 11.5 6 13.5 8 -
IC = 15 mA, VCE = 8 V, ZS =ZL= 50 Ω f = 900 MHz f = 1.8 GHz
Package Equivalent Circuit: LBI = LBO = LEI = LEO = LCI = LCO = CBE = CCB = CCE = 84 165 0.85 0.51 0.69 0.61 0 0.49 nH nH nH nH nH nH fF fF fF
Valid up to 6 GHz For examples and ready to use parameters please contact your local Siemens distributor or sales office to obtain a Siemens CD-ROM or see Internet: http://www.siemens.de/Semiconductor/products/35/35.htm
0.90551 12.196 1.2703 0.79584 0.66749 0.32167 0.21451 922.07 0.3 0.75 1.11 300
fA mA Ω V fF V eV K
0.016123 A 0.019729 A
0.024709 fA
0.013277 mA
All parameters are ready to use, no scalling is necessary. Extracted on behalf of SIEMENS Small Signal Semiconductors by: Institut für Mobil-und Satellitenfunktechnik (IMST) © 1996 SIEMENS AG

BFN23资料

PNP Silicon High-Voltage TransistorBFN 23Maximum Ratings Type Ordering Code (tape and reel)Marking Package 1)Pin Configuration BFN 23Q62702-F1064HCsSOT-23BEC123ParameterSymbol Values Unit Collector-emitter voltage V CE0250VCollector-base voltageV CB0250Collector-emitter voltage,R BE = 2.7k ΩV CER 250Collector current I C 50mA Total power dissipation,T S =71˚C P tot 360mW Junction temperature T j 150˚CStorage temperature range T stg–65 … +150Thermal Resistance Junction - ambient 2)R th JA ≤ 290K/WJunction - soldering pointR th JS≤ 220Emitter-base voltage V EB05Peak collector currentI CM 1001)For detailed information see chapter Package Outlines.2)Package mounted on epoxy pcb 40mm ×40mm ×1.5mm/6cm 2 Cu.q Suitable for video output stages in TV sets and switching power supplies q High breakdown voltageq Low collector-emitter saturation voltage q Low capacitanceqComplementary type: BFN 22 (NPN)Electrical Characteristicsat T A = 25 ˚C, unless otherwise specified.UnitValues ParameterSymbolmin.typ.max.DC characteristicsVCollector-emitter breakdown voltage I C = 1mAV (BR)CE0250––Collector-base breakdown voltage I C = 10µAV (BR)CB0250––Emitter-base breakdown voltage I E = 10µAV (BR)EB05––nA µACollector-base cutoff current V CB = 200VV CB = 200V,T A = 150 ˚CI CB0––––10020µACollector cutoff current V CE = 250V,R BE = 2.7k ΩV CE = 250V,T A = 150 ˚C,R BE = 2.7k ΩI CER––––150–DC current gain 1)I C = 25mA , V CE = 20Vh FE 50––VCollector-emitter saturation voltage 1)I C = 10mA , I B = 1mAV CEsat ––0.5Base-emitter saturation voltage 1)I C = 10mA , I B = 1mA V BEsat––1Emitter-base cutoff current V EB = 5VI EB0––10Collector-emitter breakdown voltage I C = 10µA,R BE = 2.7k ΩV (BR)CER 250––MHz Transition frequencyI C = 10mA , V CE = 10V,f = 20MHz f T –100–pFOutput capacitance V CB = 30V,f = 1 MHzC obo–0.8–AC characteristics1)Pulse test conditions:t ≤ 300µs,D = 2 %.Total power dissipation P tot=f(T A*;T S) *Package mounted on epoxyPermissible pulse load P tot max/P tot DC=f(t p)Output capacitance C obo=f(V CE)f= 1 MHzTransition frequency f T=f(I C)V CE = 10VCollector current I C =f (V BE )V CE =20V Collector cutoff current I CB0=f (T A )V CB =200VDC current gain h FE =f (I C )V CE =20V。

Q62702-P936中文资料

Silizium-PIN-Fotodiode mit sehr kurzer SchaltzeitSilicon PIN Photodiode with Very Short Switching TimeWesentliche Merkmaleq Speziell geeignet für Anwendungen im Bereich von 350 nm bis 1100 nm q Kurze Schaltzeit (typ. 5 ns)q Hermetisch dichte Metallbauform (TO-18)Anwendungenq Schneller optischer Empfänger mit gro βer Modulationsbandbreite für LichtgriffelFeaturesq Especially suitable for applications from 350 nm to 1100 nmq Short switching time (typ. 5 ns)q Hermetically sealed metal package (TO-18)Applicationsq Optical sensor of high modulation bandwidth for light pensTyp Type Bestellnummer Ordering Code SFH 216Q62702-P936SFH 216Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified.f e o 06314GrenzwerteMaximum Ratings Bezeichnung DescriptionSymbol SymbolWert Value Einheit Unit Betriebs- und LagertemperaturOperating and storage temperature range T op ;T stg – 40...+ 125°C Löttemperatur (Lötstelle 2 mm vom Gehäuse entfernt bei Lötzeit t ≤ 3 s)Soldering temperature in 2 mm distance from case bottom (t ≤ 3 s)T S230°CSperrspannung Reverse voltageV R 50V Verlustleistung,T A = 25°C Total power dissipationP tot250mWKennwerte (T A = 25°C, Normlicht A,T = 2856 K)Characteristics (T A = 25°C, standard light A,T = 2856 K)Bezeichnung DescriptionSymbol SymbolWert Value Einheit Unit Fotoempfindlichkeit,V R = 5 V Spectral sensitivityS50 (≥35)nA/Ix Wellenlänge der max. Fotoempfindlichkeit Wavelength of max. sensitivityλS max 850nm Spektraler Bereich der Fotoempfindlichkeit S = 10 % von S maxSpectral range of sensitivity S = 10 % of S maxλ350 (1150)nmBestrahlungsempfindliche Fläche Radiant sensitive areaA 1mm 2Abmessung der bestrahlungsempfindlichen FlächeDimensions of radiant sensitive area L ×B L ×W 1×1mmAbstand Chipoberfläche zu Gehäuseober-flächeDistance chip front to case surface H4.2...5.0mmHalbwinkel Half angleϕ±12Grad deg.Dunkelstrom,V R = 20 V Dark currentI R1 (≤ 5)nASpektrale Fotoempfindlichkeit,λ = 850 nmSpectral sensitivitySλ0.55A/WQuantenausbeute,λ = 850 nm Quantum yield η0.80ElectronsPhotonLeerlaufspannung,E v = 1000 Ix Open-circuit voltage VO410 (≥350)mVKurzschlußstrom,E v = 1000 Ix Short-circuit current ISC50µAAnstiegs und Abfallzeit des Fotostromes Rise and fall time of the photocurrentRL = 50Ω;V R= 20 V;λ = 850 nm;I p = 800µAtr,t f5nsDurchlaßspannung,I F= 100 mA,E = 0 Forward voltage VF1.3VKapazität,V R= 0 V,f= 1 MHz,E = 0 Capacitance C11pFTemperaturkoeffizient von V O Temperature coefficient of V O TCV– 2.6mV/KTemperaturkoeffizient von I SC Temperature coefficient of I SC TCI0.2%/KRauschäquivalente Strahlungsleistung Noise equivalent powerVR = 20 V,λ = 850 nmNEP 3.3×10–14 W√HzNachweisgrenze,V R= 20 V,λ = 850 nm Detection limit D* 3.1×1012cm ·√HzWKennwerte(T A = 25°C, Normlicht A,T = 2856 K) Characteristics(T A = 25°C, standard light A,T = 2856 K)Bezeichnung Description SymbolSymbolWertValueEinheitUnitRelative spectral sensitivity S rel =f (λ)Dark current I R =f (V R ),E= 0Photocurrent I P =f (E v ),V R = 5 V Open-circuit-voltage V O =f (E v )CapacitanceC =f (V R ),f = 1 MHz,E= 0Total power dissipation P tot =f (T A )Dark currentI R =f (T A ),V R = 1 V,E= 0Directional characteristics S rel =f (ϕ)。

SFH203中文资料

Nachweisgrenze, VR = 20 V, λ = 850 nm Detection limit
TCV
–2.6
–2.6
mV/K
TCI
%/K
0.18
–
–
0.2
NEP
2.9 x 10–14 2.9 x 10–14
W
√Hz
D*
3.5 x 1012 3.5 x 1012 cm · √Hz
W
Semiconductor Group
Photocurrent IP = f (Ee), VR = 5 V Open-circuit-voltage VL= f (Ee) SFH 2030 F
Total power dissipation Ptot = f (TA)
Dark current IR characteristics Srel = f (ϕ)
Spektraler Bereich der Fotoempfindlichkeit S = 10% von Smax Spectral range of sensitivity S = 10% of Smax Bestrahlungsempfindliche Fläche Radiant sensitive area
VF
Forward voltage
420 (≥ 350) –
mV
–
370 (≥ 300) mV
80
–
µA
–
25
µA
5
5
ns
1.3
1.3
V
Kapazität, VR = 0 V, f = 1 MHz, E = 0
C0
11
11
pF
Capacitance

tm1638中文资料_数据手册_参数

-3-
LED 驱动控制专用电路
TM1638
B0
B1 B2 B3
B4
B5
B6
B7
K3 K2 K1 X
K3
K2
K1
X
KS1
KS2
BYTE1
KS3
KS4
BYTE2
KS5
KS6
BYTE3
KS7
KS8
BYTE4
图（4） ▲注意：1、TM1638最多可以读4个字节，不允许多读。
在时钟的上升沿读数才时稳定。
VCC
芯片内部电路
CT
10K DIO
GND
图（1）

-2-
LED 驱动控制专用电路
TM1638
五、显示寄存器地址和显示模式：
该寄存器存储通过串行接口从外部器件传送到TM1638 的数据，地址从00H-0FH共16字节单元，分别与芯片SGE和GRID管脚所接的LED灯对应，分配如下图：写LED显示数据的时候，按照从显示地址从低位到高位，从数据字节的低位到高位操作。
SEG10
SEG9
SEG8
SEG7
SEG6
SEG5
SEG4
SEG3
SEG2
SEG1
X X XXXX
xxHL（低四位）
xxHU(高四位)
xxHL(低四位)
xxHU（高四位）
B0 B1 B2 B3 B4 B5 B6 B7 B0 B1 B2 B3 B4 B5 B6 B7
00HL 02HL 04HL 06HL 08HL 0AHL 0CHL 0EHL
输出（段）段输出，P管开漏输出
Grid1～Grid8 VDD GND
输出（位）逻辑电源逻辑地

Q62702-G0067中文资料

in SIEGET ® 25-Technologie Si-MMIC-Amplifier VPS056054213Preliminary data• Cascadable 50 Ω-gain block • Unconditionally stable• Gain |S 21|2 = 18,5 dB at 1.8 GHz (appl.1) gain |S 21|2 = 22 dB at 1.8 GHz (appl.2) I P 3out = +7 dBm at 1.8 GHz (V D =3V, I D =9.4mA)• Noise figure NF = 2.2 dB at 1.8 GHz • typical device voltage V D = 2 V to 5 V • Reverse isolation < 35 dB (appl.2)VCircuit DiagramESD : E lectro s tatic d ischarge sensitive device, observe handling precaution!Type Marking Ordering Code PackagePin Configuration Q62702-G00671, INBGA 4272, GND 3, +V4, Out SOT-343BMsMaximum Ratings SymbolValue ParameterUnit Device current I D mA 25Device voltage6V V D ,+V P tot 150mW Total power dissipation, T S ≤ tbd °CdBm R F input power P RFin -10Junction temperature T j 150°CAmbient temperature -65 ...+150T A Storage temperatureT stg-65 ...+150Thermal Resistance ≤ tbdK/WJunction - soldering point 1)R thJS1) T S is measured on the emitter (GND) lead at the soldering point to the pcbElectrical Characteristics at T A = 25 °C, unless otherwise specified.Parameter Symbol UnitValuestyp.max.min.AC characteristics V D = 3 V, Z o = 50W, Testfixture Appl..1|S 21|2 - - -Insertion power gain f = 0.1 GHz f = 1 GHz f = 1.8 GHz 27 22 28.5 - - -dBReverse isolation f = 1.8 GHz S12-22-Noise figure f = 0.1 GHz f = 1 GHz f = 1.8 GHz- - - - - - 1.9 2 2.2NFIntercept point at the output f = 1.8 GHzIP 3out -+ 7 -dBm Return loss input f = 1.8 GHzRL in ->12-dB Return loss output f = 1.8 GHzRL out->9-Typical configurationAppl.2Appl.1EHA07379100 pF100 pF1 nFRF OUTRF INGND+VBGA 427100 pFNote: 1) Large-value capacitors should be connected from pin 3 to ground right at the device to provide a low impedance path! (appl.1)2) The use of plated through holes right at pin 2 is essential for pc-board-applications. Thin boards are recommended to minimize the parasitic inductance to ground!S-Parameters at T A = 25 °C, (Testfixture, Appl.1)fS 11S 21S 12S 22GHzMAGANGMAGANGMAGANGMAGANG-0.0022 0.0046 0.0104 0.0169 0.0194 0.0225 0.0385 0.0479 0.0517 0.0549 0.0709 0.089250.7 71.8 83.8 94.8 97.3 98.3 99.7 99.3 98.9 98.8 97.1 96.90.1 0.2 0.5 0.8 0.9 1 1.5 1.8 1.9 2 2.5 3-38.3 -16 -20.8 -56.9 -69.1 -80.6 -133.5 -156.1 -162.8 -167.7 172.8 153.3164.9 158.9 135.2 115.4 109.4 104 84.9 77 74.7 72.3 63 5524.821 24.606 22.236 18.258 17.152 15.786 10.923 9.029 8.486 8.015 6.2595.1030.1382 0.1179 0.1697 0.1824 0.1782 0.176 0.1827 0.1969 0.2021 0.2116 0.2437 0.2580.6435 0.6278 0.54 0.4453 0.4326 0.4129 0.3852 0.3917 0.3946 0.3991 0.4202 0.4477174.8 166.9 147.3 140.2 139.4 138.1 139.6 139.3 138.8 138.3 134.6 131Spice-model BGA 427OUTT1T501T2T501R 114.5k ΩR 2280ΩR 3 2.4k ΩR 4170ΩC 1 2.3pF C P10.2pF 0.2pF C P2C P30.6pFC P40.1pF C P50.1pF C’-E’-diode T1Transistor Chip Data T1 (Berkley-SPICE 2G.6 Syntax) :IS =0.21024aA V 39.251VAF =NE = 1.7763-V VAR =34.368NC = 1.3152-ΩRBM = 1.3491CJE = 3.7265fF ps 4.5899TF =ITF = 1.3364mA V 0.99532VJC =TR = 1.4935ns -MJS =0XTI =3-NF =1.0405-ISE =fA 15.7610.96647-NR =ISC =0.037223fA 0.21215mA IRB =RC =Ω0.126910.37747-MJE =VTF =V 0.1976296.941fF CJC =XCJC =0.08161-0.75V VJS =EG = 1.11eV 300KTNOMBF =83.23-A 0.16493IKF =BR =10.526-A IKR =0.25052RB =15ΩRE = 1.9289VJE =0.70367V -XTF =0.3641PTF =0deg -0.48652MJC =CJS =0fF -XTB =0FC =0.99469-C’-E’-Diode Data (Berkley-SPICE 2G.6 Syntax) :RS =20ΩIS =2fA -1.02N =All parameters are ready to use, no scalling is necessaryPackage Equivalent Circuit:Extracted on behalf of SIEMENS Small Signal Semiconductors by Institut für Mobil-und Satellitentechnik (IMST)© 1996 SIEMENS AGFor examples and ready to use parameters please contact your local Siemens distributor or sales o ffice to obtain a Siemens CD-ROM or see Internet: http://www.siemens.de/Semiconductor/products/35/35.htmInsertion power gain |S 21|2 = f (f )V D , I D = parameter1|S 21|2Noise figure NF = f (f )V D ,I D= parameter1NFIntercept point at the outputIP 3out = f (f )V D,I D = parameter1dBmI P 3o u t。

BAS125-04W中文资料

Electrical Characteristics at TA=25°C, unless otherwise specified Parameter Symbol min. DC characteristics Reverse current Values typ. max. Unit
IR
385 530 800 150 200
Semiconductor Group
5
Dec-20-1996
BAS 125-04W... (IF per diode)
100 mA
IF
80
TS
70 60 50 40 30 20 10 0 0 20 40 60 80 100 120 °C 150 TA ,TS
TA
Permissible Pulse Load RTHJS = f(tp)
BAS 125-04W...
BAS 125W
100 mA
IF
80 70 60 50 40 30 20 10 0 0 20 40 60 80 100
TS
TA
120 °C 150 TA ,TS
Permissible Pulse Load RTHJS = f(tp)
BAS 125W
10 3
Permissible Pulse Load IFmax/IFDC = f(tp)
nA
VR = 20 V VR = 25 V
Forward voltage
VF
400 650 900
mV
IF = 1 mA IF = 10 mA IF = 35 mA
AC Characteristics Diode capacitance
CT
16 1.1

CMY213中文资料

ESD: Electrostatic discharge sensitive device, observe handling precautions!
CMY 213
7 65 8
34 12
VPW05982
Type CMY 213
Marking M6s
Ordering Code (tape and reel)
GC
8.0
FSSB
–
RFIrl/IFOrl –
9.5 –
8
–
10 –
3rd Order Input Intercept Point
IIP3
8
10 –
LO-RF Isolation
Iso
–
10 –
Unit
mA
dB dB dB
dBm dB
*Important Note: During production, the RF performance at PCS frequencies is screened. The passed devices also achieve the specified RF performance at cellular frequencies.
GND
EHT09227
Figure 2 Test Circuit
Data Sheet
5
2001-01-01
External Components for Cellular Frequencies
fRF = 850 MHz; fLO = 740 MHz; fIF = 110 MHz
Capacitors
cies for PLO = – 5 dBm (operation conditions: 3 V, 8 mA; fRF = 850 MHz; fLO = 740 MHz):

BPW34S

Photosensitive area 2.65 mm x 2.65 mm
BPW 34
1.4
1.8
Approx. weight 0.1 g
GEO06643
Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified.
10 3
Ι R nA
OHF00082
10 2
10 1
10 0
1000 TA
Directional characteristics Srel = f (ϕ)
40
30
20
10
0
ϕ 1.0
50 0.8
60
0.6
OHF01402
70
0.4
80
0.2
0 90
100
1.0
Wesentliche Merkmale q Speziell geeignet für Anwendungen
im Bereich von 400 nm bis 1100 nm q Kurze Schaltzeit (typ. 20 ns) q DIL-Plastikbauform mit hoher
0.8
0.6
0.4
0
20 40 60 80 100 120
Semiconductor Group
5
1998-08-27
Bezeichnung Description
Kurzschlußstrom, Ev = 1000 Ix
Short-circuit current
Anstiegs- und Abfallzeit des Fotostromes Rise and fall time of the photocurrent

SPLPL85中文资料

*)
SPL PLxx (SFH 4884xx)
Ordering Code Q62702-P1759 on request
*) Other wavelengths in the range of 780 nm ... 980 nm are available on request.
Maximum Ratings (TA = 25 °C) Parameter Symbol min. Forward current Pulse width (FWHM) Duty factor Reverse voltage Operating temperature Storage temperature IF tp D VR Top Tstg – – – – – 20 – 40 – Values typ. – – 0.1 – … … – max. 20 100 – 3 + 85 + 100 260 A ns % V °C °C °C Unit
2
元器件交易网
SPL PLxx (SFH 4884xx)
Optical Characteristics (TA = 25 °C) Radiant Power Pcw vs. IF Permissible pulse handling capability; IF vs. t; Parameter D (duty cycle)
元器件交易网
Pulsed Laser Diode in Plastic Package 10 W Peak (Class 3 Laser Product) Preliminary
Features • Low cost plastic package • Reliable strained InGaAs/GaAs material • High power large-optical-cavity structure • Single emitting area 200 µm × 2 µm Applications • Range finding • Security, surveillance • Illumination, ignition • Testing and measurement Type SPL PL85 SPL PL90 Old Type (as of Oct. 1996) SFH 488425 – Wavelength 850 nm 904 nm

BAS70-中文资料

≤ 335 ≤ 435
1) For detailed information see chapter Package Outlines. 2) Max. 450 mW per package. 3) Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu.
TS ≤ 66 ˚C2)
BAS 70-04 … TS ≤ 40 ˚C2)
Junction temperature
Operating temperature range
Storage temperature range
Thermal Resistance
Junction - ambient3) BAS 70 BAS 70-04 …
元器件交易网
Silicon Schottky Diodes
q General-purpose diodes for high-speed switching q Circuit protection q Voltage clamping q High-level detecting and mixing
Differential forward resistance rf = f (IF) f= 10 kHz
Semiconductor Group
4
元器件交易网
Forward current IF = f (TA*; TS) * Package mounted on epoxy
Available with CECC quality assessment
BAS 70 …
ESD: Electrostatic discharge sensitive device, observe handling precautions!

BPW34BS中文资料

BPW 34B BPW 34BSSilizium-PIN-Fotodiode mit erhöhter Blauempfindlichkeit; in SMTSilicon PIN Photodiode with Enhanced Blue Sensitivity; in SMT 2002-01-241Wesentliche Merkmale•Speziell geeignet für Anwendungen im Bereich von 350nm bis 1100nm •Kurze Schaltzeit (typ. 25ns)•DIL-Plastikbauform mit hoher Packungsdichte Anwendungen•Lichtschranken für Gleich- undWechsellichtbetrieb im sichtbaren Lichtbereich •Industrieelektronik•…Messen/Steuern/Regeln“Typ Type Bestellnummer Ordering Code BPW 34B Q62702-P945BPW 34BSQ62702-P1601Features•Especially suitable for applications from 350nm to 1100nm•Short switching time (typ. 25 ns)•DIL plastic package with high packing density Applications•Photointerrupters •Industrial electronics•For control and drive circuitsGrenzwerte Maximum RatingsBezeichnung Parameter SymbolSymbolWertValueEinheitUnitBetriebs- und Lagertemperatur Operating and storage temperature range Top; T stg– 40…+ 85°CSperrspannung Reverse voltage VR32VVerlustleistung, T A = 25 °C Total power dissipation Ptot150mWKennwerte (T A = 25 °C, Normlicht A, T = 2856 K) Characteristics (T A = 25 °C, standard light A, T = 2856 K)Bezeichnung Parameter SymbolSymbolWertValueEinheitUnitFotoempfindlichkeit, V R = 5 VSpectral sensitivityS75nA/IxWellenlänge der max. FotoempfindlichkeitWavelength of max. sensitivityλS max850nmSpektraler Bereich der FotoempfindlichkeitS = 10% von SmaxSpectral range of sensitivityS = 10% of Smaxλ350…1100nmBestrahlungsempfindliche FlächeRadiant sensitive areaA 7.45mm2Abmessung der bestrahlungsempfindlichen Fläche Dimensions of radiant sensitive area L×BL×W2.73×2.73mm×mmHalbwinkel Half angle ϕ±60Graddeg.Dunkelstrom, V R = 10 V Dark current IR2 (≤ 30)nASpektrale Fotoempfindlichkeit, λ = 400 nm Spectral sensitivity Sλ0.2A/WQuantenausbeute, λ = 400 nm Quantum yield η0.62ElectronsPhotonLeerlaufspannung, E v = 1000 Ix Open-circuit voltage VO390mV2002-01-2422002-01-243Kurzschlu ßstrom Short-circuit currentE e = 0.5 mW/cm 2, λ = 400 nmI SC7.4 (≥ 5.4)µAAnstiegs- und Abfallzeit des Fotostromes Rise and fall time of the photocurrentR L = 50 Ω; V R = 5 V; λ = 850 nm; I p = 800 µA t r, t f25nsDurchla ßspannung, I F = 100 mA, E = 0 Forward voltageV F 1.3V Kapazit ät, V R = 0 V, f = 1 MHz, E = 0 CapacitanceC 072pF Temperaturkoeffizient von V O Temperature coefficient of V O TC V – 2.6mV/K Temperaturkoeffizient von I SC Temperature coefficient of I SCTC I 0.18%/K Rausch äquivalente Strahlungsleistung Noise equivalent power V R = 10 V, λ = 400 nmNEP1.3×10– 13Nachweisgrenze, V R = 10 V, λ = 400 nm Detection limitD*2.1×1012Kennwerte (T A = 25 °C, Normlicht A, T = 2856 K)Characteristics (T A = 25 °C, standard light A, T = 2856 K) (cont ’d)Bezeichnung ParameterSymbol SymbolWert Value Einheit Unit W Hz -----------cm Hz ×W--------------------------2002-01-244Relative Spectral SensitivityI RDirectional Characteristics S rel = f (ϕ)204060801001200.40.60.81.00Photocurrent I P = f (E v ), VR = 5 V CapacitanceTotal Power Dissipation IMaßzeichnungMaße werden wie folgt angegeben: mm (inch) / Dimensions are specified as follows: mm (inch). 2002-01-245Published by OSRAM Opto Semiconductors GmbH & Co. OHGWernerwerkstrasse 2, D-93049 Regensburg© All Rights Reserved.Attention please!The information describes the type of component and shall not be considered as assured characteristics.Terms of delivery and rights to change design reserved. Due to technical requirements components may contain dangerous substances. For information on the types in question please contact our Sales Organization.PackingPlease use the recycling operators known to you. We can also help you – get in touch with your nearest sales office. By agreement we will take packing material back, if it is sorted. You must bear the costs of transport. For packing material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs incurred.Components used in life-support devices or systems must be expressly authorized for such purpose! Critical components 1 , may only be used in life-support devices or systems 2 with the express written approval of OSRAM OS.1 A critical component is a component usedin a life-support device or system whose failure can reasonably be expected to cause the failure of that life-support device or system, or to affect its safety or effectiveness of that device or system.2 Life support devices or systems are intended (a) to be implanted in the human body, or (b) to support and/or maintain and sustain human life. If they fail, it is reasonable to assume that the health of the user may be endangered.2002-01-246。

SFH 221;中文规格书,Datasheet资料

SFH 221Silizium-Differential-Fotodiode Silicon Differential PhotodiodeLead (Pb) Free Product - RoHS Compliant2007-04-031Wesentliche Merkmale•Speziell geeignet für Anwendungen im Bereich von 400 nm bis 1100 nm •Hohe Fotoempfindlichkeit•Hermetisch dichte Metallbauform (ähnlich TO-5), geeignet bis 125 °C 1)•Doppeldiode von extrem hoher Gleichmäβigkeit Anwendungen •Nachlaufsteuerungen •Kantenführung •Industrieelektronik•…Messen/Steuern/Regeln“1)Eine Abstimmung der Einsatzbedingungen mit dem Hersteller wird empfohlen bei T A > 85 °C1)For operating conditions of T A > 85 °C please contact us.Typ Type Bestellnummer Ordering Code SFH 221Q62702P0270Features•Especially suitable for applications from 400 nm to 1100 nm •High photosensitivity•Hermetically sealed metal package (similar to TO-5), suitable up to 125 °C 1)•Double diode with extremely high homogeneousness Applications •Follow-up controls •Edge drives•Industrial electronics•For control and drive circuitsGrenzwerte Maximum RatingsBezeichnung Parameter SymbolSymbolWertValueEinheitUnitBetriebs- und Lagertemperatur Operating and storage temperature range Top; T stg– 40 … + 125°CSperrspannung Reverse voltage VR10VIsolationsspannung gegen Gehäuse Insulation voltage vs. package VIS100VVerlustleistung, T A = 25 °C Total power dissipation Ptot50mWKennwerte (T A = 25 °C, Normlicht A, T = 2856 K) für jede Einzeldiode Characteristics (T A = 25 °C, standard light A, T = 2856 K) per single diodeBezeichnung Parameter SymbolSymbolWertValueEinheitUnitFotoempfindlichkeit, V R = 5 VSpectral sensitivityS24 (≥ 15)nA/IxWellenlänge der max. FotoempfindlichkeitWavelength of max. sensitivityλS max900nmSpektraler Bereich der FotoempfindlichkeitS = 10% von SmaxSpectral range of sensitivityS = 10% of Smaxλ400 … 1100nmBestrahlungsempfindliche FlächeRadiant sensitive areaA 1.54mm2Abmessung der bestrahlungsempfindlichen Fläche Dimensions of radiant sensitive area L×BL×W0.7 × 2.2mm²Halbwinkel Half angle ϕ± 55Graddeg.Dunkelstrom, V R = 10 V Dark current IR10 (≤ 100)nASpektrale Fotoempfindlichkeit, λ = 850 nm Spectral sensitivity Sλ0.55A/W2007-04-0322007-04-033Maximale Abweichung der Fotoempfindlichkeit vom MittelwertMax. deviation of the system spectral sensitivity from the averageΔS± 5%Quantenausbeute, λ = 850 nm Quantum yieldη0.80Electrons Photon Leerlaufspannung, E v = 1000 Ix Open-circuit voltageV O 330 (≥ 280)mV Kurzschlu βstrom, E v = 1000 Ix Short-circuit current I SC 24μA Isolationsstrom, V IS = 100 V Insulation currentI IS 0.1 (≤ 1)nA Anstiegs- und Abfallzeit des Fotostromes Rise and fall time of the photocurrentR L = 1 k Ω; V R = 5 V; λ = 850 nm; I p = 25 μA t r , t f500nsDurchla βspannung, I F = 40 mA, E = 0 Forward voltageV F 1.0V Kapazität, V R = 0 V, f = 1 MHz, E = 0 CapacitanceC 025pF Temperaturkoeffizient für V O Temperature coefficient of V O TC V – 2.6mV/K Temperaturkoeffizient für I SC Temperature coefficient of I SCTC I 0.18%/K Rauschäquivalente Strahlungsleistung Noise equivalent power V R = 10 V, λ = 850 nmNEP1.0 × 10–13Nachweisgrenze, V R = 10 V, λ = 850 nm Detection limitD*1.2 × 1012Kennwerte (T A = 25 °C, Normlicht A, T = 2856 K) für jede EinzeldiodeCharacteristics (T A = 25 °C, standard light A, T = 2856 K) per single diode (cont’d)Bezeichnung ParameterSymbol Symbol Wert Value Einheit Unit W Hz -----------cm Hz ×W--------------------------2007-04-034OPTO SEMICONDUCTORSRelative Spectral SensitivityDark CurrentDirectional Characteristics S Photocurrent I P = f (Ev ), VR = 5 V CapacitanceTotal Power Dissipation Dark CurrentMaßzeichnungPackage OutlinesMaße in mm (inch) / Dimensions in mm (inch).2007-04-035LötbedingungenSoldering ConditionsWellenlöten (TTW)(nach CECC 00802)TTW Soldering(acc. to CECC 00802)OSRAM Opto Semiconductors GmbHWernerwerkstrasse 2, D-93049 Regensburg© All Rights Reserved.The information describes the type of component and shall not be considered as assured characteristics.Terms of delivery and rights to change design reserved. Due to technical requirements components may contain dangerous substances. For information on the types in question please contact our Sales Organization.PackingPlease use the recycling operators known to you. We can also help you – get in touch with your nearest sales office. By agreement we will take packing material back, if it is sorted. You must bear the costs of transport. For packing material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs incurred.Components used in life-support devices or systems must be expressly authorized for such purpose! Critical components 1 , may only be used in life-support devices or systems 2 with the express written approval of OSRAM OS.1 A critical component is a component usedin a life-support device or system whose failure can reasonably be expected to cause the failure of that life-support device or system, or to affect its safety or effectiveness of that device or system.2 Life support devices or systems are intended (a) to be implanted in the human body, or (b) to support and/or maintain and sustain human life. If they fail, it is reasonable to assume that the health of the user may be endangered.2007-04-036分销商库存信息: OSRAMSFH 221。

BSS81B中文资料

V(BR)EB0 6
–
Collector-base cutoff current VCB = 60 V VCB = 60 V, TA = 150 ˚C
ICB0
–
–
–
–
Emitter-base cutoff current VEB = 3 V
IEB0
–
–
DC current gain IC = 100 µA, VCE = 10 V IC = 1 mA, VCE = 10 V IC = 10 mA, VCE = 10 V1) IC = 150 mA, VCE = 10 V1) IC = 500 mA, VCE = 10 V1)
–
50
–
35
–
75
–
40
–
100 –
25
–
40
–
Collector-emitter saturation voltage1) IC = 150 mA, IB = 15 mA IC = 500 mA, IB = 50 mA
VCEsat
–
–
–
–
Base-emitter saturation voltage1) IC = 150 mA, IB = 15 mA IC = 500 mA, IB = 50 mA
BSS 79 BSS 81
Type
BSS 79 B BSS 79 C BSS 81 B BSS 81 C
Marking
CEs CFs CDs CGs
Ordering Code (tape and reel)
Q62702-S503 Q62702-S501 Q62702-S555 Q62702-S605
Pin Configuration

Q62702-P5166中文资料

SFH 4301Schnelle IR-Lumineszenzdiode (950 nm) im 3 mm Radial-GehäuseHigh-Speed Infrared Emitter (950 nm) in 3 mm Radial Package 2000-01-011OPTO SEMICONDUCTORSWesentliche Merkmale•Hohe Pulsleistung und hoher Gesamt-strahlungsfluß Φe•Sehr kurze Schaltzeiten (10 ns)•Sehr hohe Langzeitstabilität •Hohe Zuverlässigkeit Anwendungen•Schnelle Datenübertragung mit Übertragungsraten bis 100 Mbaud (IR Tastatur, Joystick, Multimedia)•Analoge und digitale Hi-Fi Audio- und Videosignalübertragung•Batteriebetriebene Geräte (geringe Stromaufnahme)•Anwendungen mit hohenZuverlässigkeits-ansprüchen bzw. erhöhten Anforderungen•Alarm- und Sicherungssysteme •IR FreiraumübertragungTyp Type Bestellnummer Ordering Code Gehäuse PackageSFH 4301Q62702-P51663-mm-LED-Gehäuse (T1), schwarz eingefärbt, An-schlüsse im 2.54-mm-Raster (1/10’’), Kathodenkennung: längerer Anschluß3 mm LED package (T1), black-colored epoxy resin, solder tabs lead spacing 2.54 mm (1/10’’), cathode marking: long leadFeatures •High pulse power and high radiant flux Φe •Very short switching times (10 ns)•Very high long-time stability •High reliabilityApplications•High data transmission rate up to 100 Mbaud (IR keyboard, Joystick, Multimedia)•Analog and digital Hi-Fi audio and video signal transmission•Low power consumption (battery) equipment •Suitable for professional and high-reliability applications•Alarm and safety equipment •IR free air transmissionGrenzwerte(T A = 25 °C) Maximum RatingsBezeichnung Parameter SymbolSymbolWertValueEinheitUnitBetriebs- und Lagertemperatur Operating and storage temperature range Top; T stg– 40 … +100°CSperrspannung Reverse voltage VR3VDurchlaßstromForward currentI F (DC)100mAStoßstromSurge currentt p = 10 µs, D = 0IFSM1AVerlustleistungPower dissipationP tot180mWWärmewiderstand Sperrschicht - Umgebung,freie Beinchenlänge max. 10 mmThermal resistance junction - ambient,lead length between package bottom and PCBmax. 10 mmR thJA375K/W2000-01-012OPTO SEMICONDUCTORSKennwerte(T A = 25 °C) CharacteristicsBezeichnung Parameter SymbolSymbolWertValueEinheitUnitWellenlänge der Strahlung Wavelength of peak emissionI F = 100 mA, t p = 20msλpeak950nmSpektrale Bandbreite bei 50% von I max Spectral bandwidth at 50% of I maxI F = 100 mA, t p = 20ms∆λ40nmAbstrahlwinkel Half angle ϕ± 10Graddeg.Aktive ChipflächeActive chip areaA0.09mm2Abmessungen der aktiven Chipfläche Dimension of the active chip area L×BL×W0.3×0.3mmSchaltzeiten, I e von 10% auf 90% undvon 90% auf 10%Switching times, I e from 10% to 90% andfrom 90% to10%,I F = 100 mA, t P = 20 ms, R L = 50 Ωt r, t f10nsKapazitätCapacitanceV R = 0 V, f = 1 MHzC o 35pFDurchlaβspannungForward voltageIF= 100 mA, t p = 20ms I F = 1 A, t p = 100 µs V FV F1.5 (≤ 1.8)3.2 (≤ 3.6)VVSperrstrom Reverse currentV R = 3 VIR0.01 (≤ 10)µAGesamtstrahlungsflußTotal radiant fluxI F = 100 mA, t p = 20msΦe32mWTemperaturkoeffizient von I e bzw. ΦeTemperature coefficient of I e or ΦeI F = 100 mATC I – 0.44%/K2000-01-013OPTO SEMICONDUCTORS2000-01-014OPTO SEMICONDUCTORSTemperaturkoeffizient von V F Temperature coefficient of V F I F = 100 mATC V– 1.5mV/KTemperaturkoeffizient von λTemperature coefficient of λI F = 100 mATC λ+ 0.2nm/KStrahlstärke Ιe in Achsrichtunggemessen bei einem Raumwinkel von Ω = 0.01 sr Radiant Intensity Ιe in Axial Direction measured at a solid angle of Ω = 0.01 sr Bezeichnung ParameterSymbol Symbol Wert Value Einheit Unit StrahlstärkeRadiant intensityI F = 100 mA, t p = 20ms I e min I e typ 1660mW/sr mW/sr StrahlstärkeRadiant intensity I F = 1 A, t p = 100 µsI e typ400mW/srLötbedingungenSoldering ConditionsTauch-, Schwall- und Schlepplötung Dip, wave and drag soldering Kolbenlötung (mit 1,5-mm-Kolbenspitze)Iron soldering (with 1.5-mm-bit)Lötpad-temperaturTemperature of the soldering bath Maximal zulässige LötzeitMax. perm. soldering time Abstand Lötstelle –GehäuseDistance betweensolder joint and case Temperatur des KolbensTemperature of the solder-ing iron Maximale zulässige Lötzeit Max. permis-sible solder-ing time Abstand Lötstelle – Gehäuse Distance between solder joint and case260 °C10 s≥ 1.5 mm 300 °C3s≥ 1.5 mmKennwerte (T A = 25 °C) (cont’d)Characteristics Bezeichnung ParameterSymbol Symbol Wert Value Einheit UnitRelative Spectral EmissionI= f(λ)Forward Current I F = f (V F)Radiant IntensityΙe/Ιe (100 mA) = f (I F)Ierel= f (ϕ)Max. Permissible Forward CurrentI F = f(T)2000-01-015OPTO SEMICONDUCTORSMaßzeichnungPackage OutlinesMaße in mm, wenn nicht anders angegeben / Dimensions in mm, unless otherwise specified.2000-01-016OPTO SEMICONDUCTORS。

SFH203P中文资料

SFH 217 SFH 217 F
Grenzwerte Maximum Ratings Bezeichnung Description Betriebs- und Lagertemperatur Operating and storage temperature range Löttemperatur (Lötstelle 2 mm vom Gehäuse entfernt bei Lötzeit t ≤ 3s) Soldering temperature in 2 mm distance from case bottom (t ≤ 3s) Sperrspannung Reverse voltage Verlustleistung Total power dissipation Symbol Symbol Top; Tstg TS Wert Value –55 ... +100 300 Einheit Unit
q Industrial electronics q For control and drive circuits q Light reflecting switches for steady and
Wechsellichtbetrieb q LWL Typ (*ab 4/95) Bestellnummer Type (*as of 4/95) Ordering Code SFH 217 (*SFH 203 P) SFH 217 F (*SFH 203 PFA) Q62702-P946 Q62702-P947
D*
3.5 x 1012
3.5 x 1012
SFH 217 SFH 217 F
Relative spectral sensitivity SFH 217 Srel = f (λ) Relative spectral sensitivity SFH 217 F Srel = f (λ) Photocurrent IP = f (Ev), VR = 5 V Open-circuit-voltage SFH 217 VL= f (Ev)

SFH320FA-3中文资料

NPN-Silizium-Fototransistor imSMT TOPLED ®-GehäuseSilicon NPN Phototransistor inSMT TOPLED ®-PackageMaße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified.f p l 06724f p l f 6724Wesentliche Merkmaleq Speziell geeignet für Anwendungen imBereich von 380 nm bis 1150 nm(SFH 320) und bei 880 nm (SFH 320 FA)q Hohe Linearität q P-LCC-2 Gehäuse q Gruppiert lieferbarqfür alle Lötverfahren geeignetAnwendungenq Miniaturlichtschranken für Gleich- und Wechsellichtbetrieb q Lochstreifenleser q Industrieelektronikq “Messen/Steuern/Regeln”Featuresq Especially suitable for applications from380 nm to 1150 nm (SFH 320) and of 880 nm (SFH 320 FA)q High linearityq P-LCC-2 package q Available in groupsqSuitable for all soldering methodsApplicationsq Miniature photointerrupters q punched tape readers q Industrial electronicsq For control and drive circuitsSFH 320SFH 320 FAGrenzwerteMaximum Ratings Typ Type Bestellnummer Ordering Code Typ (*vorher)Type (*formerly)Bestellnummer Ordering Code SFH 320Q62702-P0961SFH 320 FA (*SFH 320 F)Q62702-P0988SFH 320-3Q62702-P390SFH 320 FA-3(*SFH 320 F-3)Q62702-P393SFH 320-4Q62702-P1606SFH 320 FA-4(*SFH 320 F-4)Q62702-P1607Bezeichnung DescriptionSymbol SymbolWert Value Einheit Unit Betriebs- und LagertemperaturOperating and storage temperature range T op ;T stg – 55...+ 100°C Kollektor-Emitterspannung Collector-emitter voltage V CE 35V Kollektorstrom Collector currentI C 15mA Kollektorspitzenstrom,τ <10 µs Collector surge current I CS 75mA Verlustleistung,T A = 25°C Total power dissipationP tot 165mW Wärmewiderstand für Montage auf PC-Board Thermal resistance for mounting on pcbR thJA450K/WKennwerte (T A = 25°C,λ = 950 nm)Characteristics Bezeichnung DescriptionSymbol SymbolWert ValueEinheit UnitSFH 320SFH 320 FA Wellenlänge der max. Fotoempfindlichkeit Wavelength of max. sensitivityλS max 860900nm Spektraler Bereich der Fotoempfindlichkeit S = 10 % von S maxSpectral range of sensitivity S = 10 % of S maxλ380...1150730...1120nmBestrahlungsempfindliche Fläche (∅240 µm)Radiant sensitive area A 0.0450.045mm 2Abmessung der Chipfläche Dimensions of chip areaL ×B L ×W 0.45×0.450.45×0.45mm ×mm Abstand Chipoberfläche zu Gehäuseober-flächeDistance chip front to case surface H0.5...0.70.5...0.7mmHalbwinkel Half angleϕ±60±60Grad deg.Kapazität,V CE = 0 V,f = 1 MHz,E = 0Capacitance C CE 5.0 5.0pF Dunkelstrom Dark currentV CE = 25 V,E = 0I CEO1 (≤200)1 (≤200)nADie Fototransistoren werden nach ihrer Fotoempfindlichkeit gruppiert und mit arabischen Ziffern gekennzeichnet.The phototransistors are grouped according to their spectral sensitivity and distinguished by arabian figures.1)I PCEmin ist der minimale Fotostrom der jeweiligen Gruppe 1)I PCEmin is the min. photocurrent of the specified groupBezeichnung DescriptionSymbol SymbolWert ValueEinheit UnitSFH 320/FA-2-3-4Fotostrom,λ =950 nm PhotocurrentE e = 0.1 mW/cm 2,V CE = 5 V SFH 320:E v = 1000 Ix, Normlicht/standard light A,V CE = 5 VI PCE I PCE ≥ 1616 (32420)25...50650≥401000µA µA Anstiegszeit/Abfallzeit Rise and fall timeI C = 1 mA,V CC = 5 V,R L = 1 k Ωt r , t f7678µsKollektor-Emitter-SättigungsspannungCollector-emitter saturation voltage I C =I PCEmin 1)×0.3,E e = 0.1 mW/cm 2V CEsat150150150150mVDirectional characteristics S rel =f (ϕ)Relative spectral sensitivity, SFH 320S rel =f (λ)Total power dissipation P tot =f (T A )Dark currentI CEO =f (T A ),V CE = 5 V , E= 0Relative spectral sensitivity ,SFH 320 FA S rel =f (λ)PhotocurrentI PCE =f (V CE ),E e = Parameter CapacitanceC CE =f (V CE ), f = 1 MHz,E= 0PhotocurrentI PCE =f (E e ),V CE = 5 VDark currentI CEO =f (V CE ),E = 0PhotocurrentI PCE /I PCE25o =f (T A ),V CE= 5 V。

Q62702-F201资料

≤ ≤
Symbol VCE0 VCB0 VEB0 IC ICM IB IBM Ptot Tj Tstg
Values BFP 22 200 200 6
Unit BFP 25 300 300 200 500 100 200 625 150 mW ˚C mA V
– 65 … + 150
200 135
K/W
NPN Silicon Transistors with High Reverse Voltage
High breakdown voltage q Low collector-emitter saturation voltage q Low capacitance q Complementary types: BFP 23, BFP 26 (PNP)
1) 2)
For detailed information see chapter Package Outlines. Mounted on Al heat sink 15 mm × 25 mm × 0.5 mm.
BFP 22 BFP 25
Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Parameter Symbol min. DC characteristics Collector-emitter breakdown voltage BFP 22 IC = 1 mA BFP 25 Collector-base breakdown voltage BFP 22 IC = 100 µA BFP 25 Emitter-base breakdown voltage IE = 100 µA Collector-base cutoff current VCB = 160 V VCB = 250 V VCB = 160 V, TA = 150 ˚C VCB = 250 V, TA = 150 ˚C Emitter-base cutoff current VEB = 4 V DC current gain IC = 1 mA, VCE = 10 V IC = 10 mA, VCE = 10 V1) IC = 30 mA, VCE = 10 V1) BFP 22 BFP 25 BFP 22 BFP 25 IEB0 hFE 25 40 50 40 VCEsat – – VBEsat – – – – 0.4 0.5 0.9 – – – – – – – – V V(BR)CE0 200 300 V(BR)CB0 200 300 V(BR)EB0 ICB0 – – – – – – – – – – 100 100 20 20 100 nA nA µA µA nA – 6 – – – – – – – – – – V Values typ. max. Unit

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NPN-Silizium-Fototransistor im SMT SIDELED ®-Gehäuse
Silicon NPN Phototransistor in SMT SIDELED ®-Package
Wesentliche Merkmale
q Speziell geeignet für Anwendungen im
Bereich von 380 nm bis 1150 nm
(SFH 325) und bei 880 nm (SFH 325 FA)q Hohe Linearität q P-LCC-2 Gehäuse q Gruppiert lieferbar
q
nur für Reflow IR-Lötung geeignet. Bei
Schwallötung wenden Sie sich bitte an uns.
Anwendungen
q Miniaturlichtschranken für Gleich- und Wechsellichtbetrieb q Lochstreifenleser q Industrieelektronik
q “Messen/Steuern/Regeln”
Features
q Especially suitable for applications from
380 nm to 1150 nm (SFH 325) and of 880 nm (SFH 325 FA)q High linearity
q P-LCC-2 package q Available in groups
q
Suitable only for reflow IR soldering. In case of dip soldering, please contact us first.
Applications
q Miniature photointerrupters q punched tape readers q Industrial electronics
q For control and drive circuits
SFH 325SFH 325 FA
Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified.
f p l f 6867f p l 06867
Grenzwerte
Maximum Ratings Typ Type Bestellnummer Ordering Code Typ (*vorher)Type (*formerly)Bestellnummer Ordering Code SFH 325Q62702-P1638SFH 325 FA (*SFH 325 F)Q62702-P1639SFH 325-3Q62702-P1610SFH 325 FA-3(*SFH 325 F-3)Q62702-P1614SFH 325-4
Q62702-P1611
SFH 325 FA-4(*SFH 325 F-4)
Q62702-P1615
Bezeichnung Description
Symbol Symbol
Wert Value Einheit Unit Betriebs- und Lagertemperatur
Operating and storage temperature range T op ;T stg – 55...+ 100°C Kollektor-Emitterspannung Collector-emitter voltage V CE 35V Kollektorstrom Collector current
I C 15mA Kollektorspitzenstrom,τ <10 µs Collector surge current I CS 75mA Verlustleistung,T A = 25°C Total power dissipation
P tot 165mW Wärmewiderstand für Montage auf PC-Board Thermal resistance for mounting on pcb
R thJA
450
K/W
Kennwerte (T A = 25°C,λ = 950 nm)Characteristics Bezeichnung Description
Symbol Symbol
Wert Value
Einheit Unit
SFH 325
SFH 325 FA Wellenlänge der max. Fotoempfindlichkeit Wavelength of max. sensitivity
λS max 860
900
nm Spektraler Bereich der Fotoempfindlichkeit S = 10 % von S max
Spectral range of sensitivity S = 10 % of S max
λ
380...1150730...1120nm
Bestrahlungsempfindliche Fläche (∅240 µm)Radiant sensitive area A 0.0450.045mm 2Abmessung der Chipfläche Dimensions of chip area
L ×B L ×W 0.45×0.450.45×0.45mm ×mm Abstand Chipoberfläche zu Gehäuseober-fläche
Distance chip front to case surface H
0.5...0.7
0.5...0.7
mm
Halbwinkel Half angle
ϕ±60±60Grad deg.Kapazität,V CE = 0 V,f = 1 MHz,E = 0Capacitance C CE 5.0 5.0pF Dunkelstrom Dark current
V CE = 25 V,E = 0
I CEO
1 (≤200)
1 (≤200)
nA
Die Fototransistoren werden nach ihrer Fotoempfindlichkeit gruppiert und mit arabischen Ziffern gekennzeichnet.
The phototransistors are grouped according to their spectral sensitivity and distinguished by arabian figures.1)I PCEmin ist der minimale Fotostrom der jeweiligen Gruppe 1)
I PCEmin is the min. photocurrent of the specified group
Bezeichnung Description
Symbol Symbol
Wert Value
Einheit Unit
SFH 325/FA
-2
-3
-4
Fotostrom,λ =950 nm Photocurrent
E e = 0.1 mW/cm 2,V CE = 5 V SFH 325:
E v = 1000 Ix, Normlicht/standard light A,V CE = 5 V
I PCE I PCE ≥1616 (32420)
25...50650≥401000µA µA Anstiegszeit/Abfallzeit Rise and fall time
I C = 1 mA,V CC = 5 V,R L = 1 k Ω
t r , t f
76
7
8
µs
Kollektor-Emitter-Sättigungsspannung
Collector-emitter saturation voltage I C =I PCEmin 1)×0.3,E e = 0.1 mW/cm 2
V CEsat
150150150150mV
Directional characteristics S rel =f (ϕ)
Relative spectral sensitivity ,SFH 325S rel =f (λ)Total power dissipation P tot =f (T
A )Dark current
I
CEO =f (T A ),V CE = 5 V , E
= 0Relative spectral sensitivity ,SFH 325 FA S rel =f (λ)Photocurrent
I PCE =f (V CE ),E e = Parameter Capacitance
C CE =f
(V CE ), f = 1 MHz,E
= 0Photocurrent
I PCE =f (E e ),V CE = 5 V
Dark current
I CEO =f (V CE ),E = 0
Photocurrent
I PCE /I PCE25o =f (T A ),V CE = 5 V。