LM136-2.5中文资料

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LM136AH-2.5RQV中文资料

Original Creation Date: 12/03/99Last Update Date: 02/13/03Last Major Revision Date:MNLM136A-2.5-X-RH REV 0E0MICROCIRCUIT DATA SHEET2.5V REFERENCE DIODE, GUARANTEED TO 100K RAD(Si)TESTED TO MIL-STD-883, METHOD 1019.5General DescriptionThe LM136A-2.5 integrated circuit is a precision 2.5V shunt regulator diode. Thismonolithic IC voltage reference operates as a low-temperature-coefficient 2.5V zener with 0.2 Ohms dynamic impedance. A third terminal on the LM136A-2.5 allows the reference voltage and temperature coefficient to be trimmed easily.The LM136A-2.5 is useful as a precision 2.5V low voltage reference for digital voltmeters,power supplies or op amp circuitry. The 2.5V makes it convenient to obtain a stable reference from 5V logic supplies. Further, since the LM136A-2.5 operates as a shunt regulator, it can be used as either a positive or negative voltage reference.NS Part NumbersLM136AH-2.5-SMD LM136AH-2.5/883LM136AH-2.5RQML LM136AH-2.5RQVIndustry Part NumberLM136APrime DieLM136Controlling DocumentSEE FEATURES SECTIONProcessingMIL-STD-883, Method 5004Quality Conformance InspectionMIL-STD-883, Method 5005Subgrp Description Temp ( C)o 1Static tests at +252Static tests at +1253Static tests at -554Dynamic tests at +255Dynamic tests at +1256Dynamic tests at -557Functional tests at +258A Functional tests at +1258B Functional tests at -559Switching tests at +2510Switching tests at +12511Switching tests at-55MICROCIRCUIT DATA SHEET MNLM136A-2.5-X-RH REV 0E0Features- Low temperature coefficient- Wide operating current of 400uA to 10mA- 0.2 Ohms dynamic impedance- +1% initial tolerance available- Guaranteed temperature stability- Easily trimmed for minimum temperature drift- Fast turn-on- Three lead transistor packageCONTROLLING DOCUMENTS:LM136AH-2.5-SMD 5962-0050101QXALM136AH-2.5/883 8418003XALM136AH-2.5RQML 5962R0050101QXALM136AH-2.5RQV 5962R0050101VXAMICROCIRCUIT DATA SHEET MNLM136A-2.5-X-RH REV 0E0(Absolute Maximum Ratings)(Note 1)Reverse Current15mAForward Current10mAStorage Temperature-60 C to +150 COperating Ambient Temperature(Note 2)-55 C to +125 CMaximum Junction Temperture(Note 2)150 CLead Temperature(Soldering, 10 seconds)300 CThermal ResistanceThetaJA(Still Air Flow)354 C/W(500LF/Min Air Flow)77 C/WThetaJC46 C/WPackage Weight(Typical)TBDESD Rating(Note 3)1000VNote 1:Absolute Maximum Ratings indicate limits beyond which damage to the device may occur.Operating Ratings indicate conditions for which the device is functional, but do notguaranteed specific performance limits. For guaranteed specifications and testconditions, see the Electrical Characteristics. The guaranteed specifications applyonly for the test conditions listed. Some performance characteristics may degradewhen the device is not operated under the listed test conditions.Note 2:The maximum power dissipation must be derated at elevated temperatures and isdictated by Tjmax (maximum junction temperature), ThetaJA (package junction toambient thermal resistance), and TA (ambient temperature). The maxium allowable powerdissipation at any temperature is Pdmax = (Tjmax - TA) /ThetaJA or the number givenin the Absolute Maximum Ratings, whichever is lower.Note 3:Human body model, 1.5K Ohms in series with 100pF.MNLM136A-2.5-X-RH REV 0E0MICROCIRCUIT DATA SHEETElectrical CharacteristicsDC PARAMETERS: (SEE NOTE 3)(The following conditions apply to all the following parameters, unless otherwise specified.)DC:Iz = 1mASYMBOL PARAMETER CONDITIONS NOTES PIN-NAME MIN MAX UNITSUB-GROUPSIadj Adjust Current Vadj = 0.7V3-125+125uA1, 2,3Delta Z Delta ZenerVoltage 400 uA < Z < 10mA36mV1310mV2, 3Vz Zener Voltage Vadj = Open3 2.465 2.515V13 2.44 2.54V2, 3Vadj = 0.7V3 2.39 2.49V13 2.29 2.49V2, 3Vadj = 1.9V3 2.49 2.69V1, 2,3Zrd Reverse DynamicImpedance 1, 30.6Ohm11, 31Ohm2, 3Vstab Temp Stability Vz = Adjusted to 2.490V2, 318mV2, 3DC PARAMETERS: DRIFT VALUES, (SEE NOTE 3)(The following conditions apply to all the following parameters, unless otherwise specified.)DC:"Delta Calculation Performed on QMLV devices at Group B, Subgroup 5 ONLY"Vz Zener Voltage Vadj = Open3-1010mV1Vadj = 0.7V3-1010mV1Vadj = 1.9V3-1010mV1 Note 1:Parameter tested go-no-go only.Note 2:Tested on Auto Drift Oven.Note 3:Pre and post irradiation limits are identical to those listed under AC and DCelectrical characteristics. These parts may be dose rate sensitive in a spaceenvironment and may demonstrate enhanced low dose rate effect. Radiation end pointlimits for the noted parameters are guaranteed only for the conditions as spectifiedin MIL-STD-883, Method 1019.5.MICROCIRCUIT DATA SHEET MNLM136A-2.5-X-RH REV 0E0Graphics and DiagramsGRAPHICS#DESCRIPTION09988HRB4METAL CAN, TO-46, 3LD, .100 DIA P.C. (B/I CKT)H03HRE METAL CAN, TO-46, 3LD, .100 DIA P.C. (P/P DWG)P000372A METAL CAN, TO-46, 3LD, .100 DIA P.C. (PINOUT)See attached graphics following this page.NMICROCIRCUIT DATA SHEET MNLM136A-2.5-X-RH REV 0E0Revision HistoryRev ECN #Rel Date Originator Changes0A0M000344703/14/01Rose Malone Initial MDS Release: MNLM136A-2.5-X-RH, Rev. 0A0.Replaces MNLM136A-2.5-X, Rev. 0BL.0B0M000379101/03/02Rose Malone Update MDS: MNLM136A-2.5-X-RH, Rev. 0A0 toMNLM136A-2.5-X-RH, Rev. 0B0. Added SMD reference toFeatures Section for LM136A-2.5/883.0C0M000395502/14/02Rose Malone Update MDS: MNLM136A-2.5-X-RH, Rev. 0B0 toMNLM136A-2.5-X-RH, Rev. 0C0. Changed Main Table andFeatures Section NSID from LM136AH-2.5/883 toLM136AH-2.5-SMD to match PDS system.0D0M000395902/13/03Rose Malone Update MDS: MNLM136A-2.5-X-RH, Rev. 0C0 toMNLM136A-2.5-X-RH, Rev. 0D0. Added to Main Table andFeatures Section LM136AH-2.5/883 reference.0E0M000412502/13/03Rose Malone Update MDS: MNLM136A-2.5-X-RH, Rev. 0D0 toMNLM136A-2.5-RH, Rev. 0E0. Added SMD Number 8418003XAfor LM136AH-2.5/883 to Features Section.。

LM285-2.5V中文资料

—
S
Long Term Stability
IR = 100µA,
—
TA = +25°C ±0.1°C
Note: 1. Tlow = – 40°C for LM285-1.2, LM285-2.5, LM285B-1.2, LM285B-2.5
0°C for LM385-1.2, LM385B-1.2, LM385-2.5, LM385B-2.5
Test Conditions
1.223 1.200 1.205 1.192
1.235 —
1.235 —
1.247 1.270 1.260 1.273
—
8.0 15
—
—
20
—
— 1.0
—
— 1.5
—
—
10
—
100
—
20
—
LM285 / LM285B–2.5 Min Typ Max
V(BR)R
Reverse Breakdown Voltage LM285B-2.5/LM385B-2.5
IR = 20mA
2.462
TA = Tlow to Thigh (Note 1) LM285-2.5V/LM385-2.5V
2.415 2.425
TA = Tlow to Thigh (Note 1)
Minimum Operating Current TA = +25°C TA = Tlow to Thigh (Note 1)
Reverse Breakdown Voltage Change with Current IRmin = IR = 1.0mA, TA = +25°C TA = Tlow to Thigh (Note 1) 1.0mA = IR = 20mA, TA = +25°C TA = Tlow to Thigh (Note 1)

阿托伐他汀钙治疗急性脑梗死的有效剂量、最适剂量及安全性研究

阿托伐他汀钙治疗急性脑梗死的有效剂量、最适剂量及安全性研究苏丹丹;肖波;毕方方【摘要】目的：探究阿托伐他汀钙对急性脑梗死治疗的有效剂量、最适剂量及安全性。

方法选取治疗的急性脑梗死患者180例作为该研究的对象，对所有的患者按照给药计量的不同分为10 mg组、20 mg组、40 mg组，3组的用药时间均为90 d，对3组用药前、30 d以及90 d的低密度脂蛋白胆固醇（ LDL）、总胆固醇（ TC）、三酰甘油（ TG）、高敏C－反应蛋白（hs－CRP）、内中膜厚度（IMT）、高密度脂蛋白胆固醇（HDL）、卒中量表（NIHSS）、肌酐（Cr）、尿酸（UA）、尿素氮（ BUN）、白细胞（ WBC）进行观察。

结果3组LDL、TC、TG、HDL水平以及NIHSS的评分在治疗后的30、90 d，均有显著变化，与用药前比较差异有统计学意义（ P ＜0．05）；治疗90 d后20 mg组和40 mg组的NIHSS的评分及LDL、TC水平和10 mg组比较差异有统计学意义（ P ＜0．05），治疗90 d后20 mg组和40 mg组之间的LDL、TC水平以及NIHSS 比较差异无统计学意义（ P ＞0．05），治疗90 d后3组组间的TG水平比较差异无统计学意义（P＞0．05），治疗90 d 3组间HDL水平比较差异有统计学意义（ P ＜0．05）；3组治疗前后IMT均有变化，但差异无统计学意义（ P ＞0．05）；治疗后30 d 20 mg组和40 mg组的hs－CRP水平与10 mg组比较差异有统计学意义（ P ＜0．05），20 mg组和40 mg 组NIHSS评分比较差异无统计学意义（ P ＞0．05）；90 d时组间的比较差异无统计学意义（ P ＞0．05）；CK（肌酸激酶）在90 d时10 mg组和20 mg组的组内比较具有显著的下降（ P ＜0．05），40 mg组的CK在90 d时有升高，但差异无统计学意义（ P ＞0．05）；3组的葡萄糖在90 d时均有显著的降低，组内差异有统计学意义（ P ＜0．05），组间的比较差异无统计学意义（ P ＞0．05），没有患者出现新发糖尿病；90 d时各组患者均没有肝酶升高超过正常3倍的；3组用药前后的Cr、UA、BUN、WBC等指标没有显著的变化。

BP1361规格书(最新版)

注 5：规格书的最小、最大规范范围由测试保证，典型值由设计、测试或统计分析保证。
最大值 30
103
1
0.3
2.5 50 1 1
0.75 5
单位
V V mV
mV % µA
MHz
µA
V V V KΩ uA
V kHz
Ω A µA
℃ ℃
Page 4
工作原理描述
BP1361和电感（L）、电流采样电阻（RS）形成一个自振荡的连续电感电流模式的降压型恒流LED控制器。 VIN上电时，电感（L）和电流采样电阻（RS）的初始电流为零，LED输出电流也为零。这时候，CS比较器的输出为高，内部功率开关导通，SW的电位为低。电流通过电感（L）、电流采样电阻（RS）、LED和内部功率开关从VIN流到地，电流上升的斜率由VIN、电感（L）和LED 压降决定，在RS上产生一个压差VCS，当(VIN-VCS) > 115mV时，CS比较器的输出变低，内部功率开关关断，电流以另一个斜率流过电感（L）、电流采样电阻（RS）、 LED和肖特基二极管（D），当(VIN-VCS) < 85mV时，功
通过PWM信号实现调光
LED的最大平均电流由连接在VIN和CS两端的电阻RS决定，通过在DIM管脚加入可变占空比的PWM信号可以调小输出电流以实现调光，计算方法如下所示：
I
OUT =
0.1× D Rs
(0 ≤ D ≤ 100%,2.5V < V pulse < 5V )
如果高电平小于2.5V，则
概述
BP1361 是一款驱动高亮度 LED 的降压恒流驱动芯片，BP1361 外部采用极少的元器件，为 MR16 LED 灯杯、LED 舞台灯、车载 LED 灯、太阳能 LED 灯和 LED 路灯提供一个极高性价比的解决方案。BP1361 输入电压范围从 5 伏到 30 伏，输出电流通过采样电阻设定，单颗 LED 最大输出电流可达 750 毫安。 BP1361 采用专利技术的恒流控制方法使得 LED 电流精度高达±3％。BP1361 通过 DIM 引脚接受 0.5-2.5V 的模拟调光以及频率范围很宽的 PWM 调光。当 DIM 的电压低于 0.3V 时，功率开关关断， BP1361 进入极低工作电流的待机状态。

RS PRO ICM 136R 电阻法器数据手册说明书

General
Sampling Rate: Overload Indication: Low Battery Indication: Auto Power Off:
Operating Temperature:
Storage Temperature: Temperature Coefficient: Safety: Maximum Conduct Size: Maximum Jaw Opening: Maximum Busbar Size: Power Requirement: Battery Life: Size: Weight:
Accuracy ±(0.7%+2dgt) ±(1%+5dgt) 50Hz~500Hz
Range
AC Accuracy
50Hz~60Hz
61Hz~400Hz
0A~60A
±(1.9%+7dgt)
±(2.5%+7dgt)
60A~400A
±(1.9%+5dgt)
±(2.5%+5dgt)
400A~600A
±(2.5%+5dgt)
Specifications:(All at 23℃±5℃,≦80% R.H.)
DC/AC Voltage
Range
Input Impedance
Overload Protection
0V~400V, 400V~600V DC
≧1MΩ
600V DC or AC rms
0V~400V, 400V~600V rms
±(1A
Overload Protection: 600A rms
Conversion Type: Average sensing True-RMS indicating

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BT136-600,127;中文规格书,Datasheet资料

GENERAL DESCRIPTIONQUICK REFERENCE DATAPassivated triacs in a plastic envelope,SYMBOLPARAMETERMAX.UNITintended for use in applications requiring high bidirectional transient and blocking BT136-600voltage capability and high thermal cycling BT136-600F performance.Typical applications include motor control,industrial and domestic V DRM Repetitive peak off-state 600V lighting,heating and static switching.voltagesI T(RMS)RMS on-state current4A I TSMNon-repetitive peak on-state 25AcurrentPINNING - TO220ABPIN CONFIGURATIONSYMBOLLIMITING VALUESLimiting values in accordance with the Absolute Maximum System (IEC 134).SYMBOL PARAMETERCONDITIONSMIN.MAX.UNIT V DRM Repetitive peak off-state -6001V voltagesI T(RMS)RMS on-state current full sine wave; T mb ≤ 107 ˚C-4A I TSMNon-repetitive peak full sine wave; T j = 25 ˚C prior to on-state current surge t = 20 ms -25A t = 16.7 ms -27A I 2t I 2t for fusingt = 10 ms- 3.1A 2s dI T /dtRepetitive rate of rise of I TM = 6 A; I G = 0.2 A;on-state current after dI G /dt = 0.2 A/µstriggeringT2+ G+-50A/µs T2+ G--50A/µs T2- G--50A/µs T2- G+-10A/µs I GM Peak gate current -2A V GM Peak gate voltage -5V P GM Peak gate power -5W P G(AV)Average gate power over any 20 ms period-0.5W T stg Storage temperature -40150˚C T jOperating junction -125˚Ctemperature1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may switch to the on-state. The rate of rise of current should not exceed 3 A/µs.THERMAL RESISTANCESSYMBOL PARAMETERCONDITIONSMIN.TYP.MAX.UNIT R th j-mb Thermal resistance full cycle -- 3.0K/W junction to mounting base half cycle -- 3.7K/W R th j-aThermal resistance in free air -60-K/Wjunction to ambientSTATIC CHARACTERISTICST j = 25 ˚C unless otherwise stated SYMBOL PARAMETER CONDITIONSMIN.TYP.MAX.UNITBT136-......F I GTGate trigger currentV D = 12 V; I T = 0.1 AT2+ G+-53525mA T2+ G--83525mA T2- G--113525mA T2- G+-307070mA I LLatching currentV D = 12 V; I GT = 0.1 AT2+ G+-72020mA T2+ G--163030mA T2- G--52020mA T2- G+-73030mA I H Holding current V D = 12 V; I GT = 0.1 A -51515mA V T On-state voltage I T = 5 A- 1.4 1.70V V GT Gate trigger voltage V D = 12 V; I T = 0.1 A -0.7 1.5V V D = 400 V; I T = 0.1 A;0.250.4-V T j = 125 ˚C I DOff-state leakage currentV D = V DRM(max);-0.10.5mA T j = 125 ˚CDYNAMIC CHARACTERISTICST j = 25 ˚C unless otherwise stated SYMBOL PARAMETER CONDITIONSMIN.TYP.MAX.UNIT BT136-......F dV D /dtCritical rate of rise of V DM = 67% V DRM(max);10050250-V/µsoff-state voltage T j = 125 ˚C; exponential waveform; gate open circuitdV com /dtCritical rate of change of V DM = 400 V; T j = 95 ˚C;--50-V/µscommutating voltage I T(RMS) = 4 A;dI com /dt = 1.8 A/ms; gate open circuitt gtGate controlled turn-on I TM = 6 A; V D = V DRM(max);--2-µstimeI G = 0.1 A; dI G /dt = 5 A/µsMECHANICAL DATANotes1. Refer to mounting instructions for SOT78 (TO220) envelopes.2. Epoxy meets UL94 V0 at 1/8".DEFINITIONSDATA SHEET STATUSDATA SHEET PRODUCT DEFINITIONSSTATUS2STATUS3Objective data Development This data sheet contains data from the objective specification forproduct development. Philips Semiconductors reserves the right tochange the specification in any manner without noticePreliminary data Qualification This data sheet contains data from the preliminary specification.Supplementary data will be published at a later date. PhilipsSemiconductors reserves the right to change the specification withoutnotice, in ordere to improve the design and supply the best possibleproductProduct data Production This data sheet contains data from the product specification. PhilipsSemiconductors reserves the right to make changes at any time inorder to improve the design, manufacturing and supply. Changes willbe communicated according to the Customer Product/ProcessChange Notification (CPCN) procedure SNW-SQ-650ALimiting valuesLimiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application informationWhere application information is given, it is advisory and does not form part of the specification.Philips Electronics N.V. 2001All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights.LIFE SUPPORT APPLICATIONSThese products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.2 Please consult the most recently issued datasheet before initiating or completing a design.3 The product status of the device(s) described in this datasheet may have changed since this datasheet was published. The latest information is available on the Internet at URL .分销商库存信息: NXPBT136-600,127。

常用芯片介绍

型号资料名称备注4N35/4N36/4N37 光电耦合器AD7520/AD7521/AD7530/AD7521 D/A转换器10-Bit,12-Bit,Multiplying D AD7541 12位D/A转换器12-Bit,Multiplying D/A Conv ADC0802/ADC0803/ADC0804 8位A/D转换器8-Bit,Microprocessor-Compat ADC0808/ADC0809 8位A/D转换器8-Bit μP Compatibie A/D Co ADC0831/ADC0832/ADC0834/ADC0838 8位A/D转换器8-Bit Serial I/O A/D Conver CA3080/CA3080A OTA跨导运算放大器CA3140/CA3140A BiMOS运算放大器DAC0830/DAC0832 8位D/A转换器8-Bit μP Compatibie,DoubleICL7106,ICL7107 3位半A/D转换器ICL7106,ICL7107,ICL7106S,IC 1/2 Digit,LCD/LED Display,AICL7116,ICL7117 3位半A/D转换器ICL7116,ICL7117 3位半LCD/L Converter with Display HoldICL7650 载波稳零运算放大器ICL7660/MAX1044 CMOS电源电压变换器ICL8038 单片函数发生器ICM7216 10MHz通用计数器ICM7216A/ICM7216B/ICM7216D 须少量的外围元件就能构成10ICM7226 带BCD输出10MHz通用计数器ICM7226A/ICM7226B 带BCD输出只须少量的外围元件就能构成ICM7555/7555 CMOS单/双通用定时器ICM7555/ICM7555 CMOS Genera ISO2-CMOS MT8880C DTMF收发器ISO2-CMOS MT8880C Integrate LF351 JFET输入运算放大器LF353 JFET输入宽带高速双运算放大器LM117/LM317A/LM317 三端可调电源LM124/LM124/LM324 低功耗四运算放大器LM124/LM124/LM324/LM2902 低LM137/LM337 三端可调负电压调整器LM139/LM239/LM339 低功耗四电压比较器LM139/LM239/LM339/LM2901/LM LM158/LM258/LM358 低功耗双运算放大器LM158/LM258/LM358/LM2904 低LM193/LM293/LM393 低功耗双电压比较器LM193/LM293/LM393/LM2903 低LM201/LM301 通用运算放大器LM231/LM331 精密电压—频率转换器LM231A/LM231/LM331A/LM331 精LM285/LM385 微功耗基准电压二极管LM308A 精密运算放大器LM386 低压音频小功率放大器LM399 带温度稳定器精密电压基准电路LM199/LM299/LM399/LM3999 带LM431 可调电压基准电路LM567/LM567C 锁相环音频译码器LM741 运算放大器LM741A/LM741E/LM741/LM741C LM831 双低噪声音频功率放大器LM833 双低噪声音频放大器LM8365 双定时LED电子钟电路LM8365 双定时LED电子钟电路MAX038 0.1Hz-20MHz单片函数发生器MAX232 5V电源多通道RS232驱动器/接收器+5V-Powered,Multichannel RSMC1403 2.5V精密电压基准电路MC1404 5.0v/6.25v/10v基准电压MC1413/MC1416 七路达林顿驱动器MC145026/MC145027/MC145028 编码器/译码器Encoder and Decoder Pairs MC145403-5/8 RS232驱动器/接收器MC145403/MC145404/MC145405/ MC145406 RS232驱动器/接收器EIA-232/V.28 CMOS Driver/Re MC145407 RS232驱动器/接收器EIA-232/V.28 CMOS Driver/Re MC145583 RS232驱动器/接收器 3.3V - 5.0V EIA-232/V.28 CMMC145740 DTMF接收器The MC145740 is a silicon gat communications, and containMC1488 二输入与非四线路驱动器MC1488/SN55188/SN75188 Quad 合EIA标准No.EIA- 232D规范MC1489 四施密特可控线路驱动器MC1489/MC1489A/SN55189/SN55 MC2833 低功率调频发射系统Low Power FM Tranmistter Sy MC3362 低功率调频窄频带接收器Low Power Dual Conversion N MC4558 双运算放大器MC7800系列 1.0A三端正电压稳压器MC7805（5.0V）、LM340-5（5.0（12V）、 MC7815（15V）、LMMC78L00系列0.1A三端正电压稳压器MC78L05（5.0V）、MC78L08（8 MC78L24（24V）MC78M00系列0.5A三端正电压稳压器MC78M05（5.0V）、MC78M06（6 MC78M18（18V）、 MC78M20（2MC78T00系列 3.0A正电压稳压器MC78T05（5.0V）、MC78T08（8MC7900系列 1.0A三端负电压稳压器MC7905（5.0V）、MC7905.2（5.（18V）、 MC7924（24V）MC79L00系列0.1A三端负电压稳压器MC79L05（5.0V）、MC79L12（1 MC79M00系列0.5A三端负电压稳压器MC79M05（5.0V）、MC79M08（8Microchip PIC系列单片机RS232通讯应用Microchip PIC系列单片机与数机与RS232通讯方面的应用参考MM5369 3.579545MHz-60Hz 17级分频振荡器常用于LM8361、LM8362、LM83MOC3009/MOC3012 双向可控硅输出光电耦合器250V OPTOCOUPLERS/OPTOISOLA MOC3020/MOC3023 双向可控硅输出光电耦合器400V OPTOCOUPLERS/OPTOISOLAMOC3081/MOC3082/MOC3083 过零双向可控硅输出光电耦合器800V 6-Pin DIP Zero-Cross OMOC8050 无基极达林顿晶体管输出光电耦合器PHOTODARLINGTON OPTOCOUPLERMOC8111 无基极晶体管输出光电耦合器PHOTODARLINGTON OPTOCOUPLERMT8870 DTMF双音频接收器MT8870C/MT8870C-1 IntegrateMT8888C DTMF 收发器Integrated DTMF Transceiver NE5532/NE5532A 双低噪声运算放大器NE5534/SE5534 低噪声运算放大器NE5534/NE5534A/SE5534/SE553 NE555/SA555 单时基电路NE555/NE555Y/SA555/SE555 单NE556/SA556/SE556 双时基电路NE570/NE571/SA571 音频压缩扩展器NE570/NE571/SA571 音频压缩扩OP07 低电压飘移运算放大器OP27 低噪音精密运算放大器OP37 低噪音高速精密运算放大器OP77 低电压飘移运算放大器OP90 精密低电压微功耗运算放大器PC817/PC827/PC847 高效光电耦合器PC817/PC827/PC837/PC847 高效PT2262 无线遥控发射编码器芯片Remote Control Encoder PT22 PT2272 无线遥控接收解码器芯片Remote Control Decoder PT22 SG2524/SG3524 脉宽调制PWMST7537 电力线调制解调器电路ST7537 电力线调制解调器电路TDA1521 2×12W Hi-Fi 音频功率放大器TDA1521/TDA1521Q 2×12W Hi-TDA2030 14W Hi-Fi 音频功率放大器 14W Hi-Fi AUDIO AMPLIFIERTDA2616 2×12W Hi-Fi 音频功率放大器TDA2616/TDA2616Q 2×12W Hi-TDA7000T FM 单片调频接收电路TDA7010T FM 单片调频接收电路TDA7021T FM MTS单片调频接收电路TDA7040T 低电压锁相环立体声解码器TDA7050 低电压单/双声道功率放大器TL062/TL064 低功耗JFET输入运算放大器TL071/TL072/TL074 低噪声JFET输入运算放大器TL082/TL084 JFET 宽带高速运算放大器TL081/TL082/TL084 JFET输入宽带高速TL494 脉宽调制PWMTL594 精密开关模式脉宽调制控制TLP521/1-4 光电耦合器TLP521-1/TLP521-2/TLP521-4 光电耦合TOP100-4 TOPSwitch 三端PWM开关电源电路TOP100/TOP101/TOP102/TOP103/TOP104TOP200-4 TOPSwitch 三端PWM开关电源电路TOP200/TOP201/TOP202/TOP203/TOP204TOP209/TOP210 TOPSwitch 三端PWM开关电源电路TOP209/TOP210 TOPSwitch Family ThrTOP221-7 TOPSwitch-Ⅱ 三端PWM开关电源电路TOP221/TOP222/TOP223/TOP224/TOP225TOP232-4 TOPSwitch-FX 五端柔韧设计开关电源电路TOP232/TOP233/TOP234 TOPSwitch-FXTOP412/TOP414 TOPSwitch 三端PWMDC-DC 开关电源TOP412/TOP414 TOPSwitch Family ThrULN2068 1.5A/50V 4路达林顿驱动电路ULN2068 1.5A/50V 4路达林顿驱动电路ULN2803 500mA/50V 8路达林顿驱动电路ULN2803 500mA/50V 8路达林顿驱动电路ULN2803/ULN2804 线性八外围驱动器阵列八路NPN达林顿连接晶体管阵系列特别计算机，工业用和消费类产品中的灯、继的设计与标准TTL系列兼容，而ULN280VFC32 电压—频率/频率—电压转换器LM211 高灵活性电压比较器LM239 四单抑制器比较器LM2901 低功耗低失调四电压比较器LM2903 NSC [DATA] 低功耗低失调双电压比较器LM211 高灵活性电压比较器LM239 四单抑制器比较器LM2901 低功耗低失调四电压比较器LM2903 NSC [DATA] 低功耗低失调双电压比较器LM293 NSC [DATA] 低偏置电压双比较器LM311 单电压比较器 LM311(TI) LM339 NSC [DATA] 四电压比较器HA17339/LM339(TI)LM393 NSC [DATA] 低功耗低失调双电压比较器 HA17393LM711 单电压比较器MC3302 四单电源比较器MC3405 双运算放大器和双比较器CD4574 四可编程电压比较器CD4575 双可编程运放/比较器产品名称型号规格性能说明LMLM24J 四运放(军用级)LM148J 通用四运放LM1875T 无线电控制/接收器LM224J 四运放(工业级)LM258N 分离式双电源双运放LM2901N 四电压比较器LM2904N 四运放LM301AN 通用运算放大器LM308N 单比较器LM311P 单比较器LM317L 可调三端稳压器/100mA LM317T 可调三端稳压器/1.5ALM317K 可调三端稳压器/3ALM318 高速宽带运放LM324K 通用四运放LM331N V-F/F-V转换器LM336-2.5V 基准电压电路LM336 5V 基准电压电路LM337T 基准电压电路1ALM338K 可调三端稳压器5ALM339N 四比较器LM348N 四741运放LM358N 低功耗双运放LM361N 高速差动比较器LM386N 声频功率放大器LM3914N 十段点线显示驱动LM393N 低功耗低失调双比较器LM399H 精密基准源(6.9)LM723CN 可调正式负稳压器LM733CN 视频放大器LM741J 单运放LM741CN 双运放NENE521 高速双差分比较器NE5532 双运放NE5534 双运放NE555N 单运放NE555J 时基电路军品极NE556 双级型双时基电路NE564 锁相环NE565 锁相环NE567 音调译码器NE592 视频放大器OPOP07 低噪声运放OP27 超低噪声精密运放OP37 超低噪声精密运放光电耦合4N25 晶体管输出4N25MC 晶体管输出4N26 晶体管输出4N27 晶体管输出4N28 晶体管输出4N29 达林顿输出4N30 达林顿输出4N31 达林顿输出4N32 达林顿输出4N33 达林顿输出4N33MC 达林顿输出4N35 达林顿输出4N36 晶体管输出4N37 晶体管输出4N38 晶体管输出4N39 可控硅输出6N135 高速光耦晶体管输出6N136 高速光耦晶体管输出6N137 高速光耦晶体管输出6N138 达林顿输出6N139 达林顿输出MOC3020 可控硅驱动输出MOC3021 可控硅驱动输出MOC3023 可控硅驱动输出MOC3030 可控硅驱动输出MOC3040 过零触发可控硅输出MOC3041 过零触发可控硅输出MOC3061 过零触发可控硅输出MOC3081 过零触发可控硅输出TLP521-1 单光耦TLP521-2 双光耦TLP521-4 四光耦TLP621 四光耦TIL113 达林顿输出TIL117 TLL逻辑输出PC814 单光耦PC817 单光耦H11A2 晶体管输出H11D1 高压晶体管输出H11G2 电阻达林顿输出LFLF347N 宽带JFET输入四运放LF351N 宽带JFET输入运放LF353N JFET输入宽带运放LF355N JFET输入运放LF357N JFET宽带非全裣运放LF398N 采样/保持电路LF412N 低偏差飘移输入运放MCMC1377 彩色电视编码器MC1403 精密电压基准源(2.5)MC1413 周边七段驱动阵列MC1416 周边七段驱动陈列MC14409 二进制脉冲拨号器MC14433 3位半A/D转换器MC14489 多字符LED显示驱动器MC145026 编码器VD5026 编码器MC145027 译码器VD5027 译码器MC145028 译码器MC145030 编码译码器MC145106 频率合成器MC145146 4位数据总线TLTL062 低功耗JEFT输入双运放TL072 低噪声JEFTTL082TL084TL431TL494ULNULN2003 周边七段驱动陈列ULN2004 周边七段驱动陈列ULN2803 周边八段驱动陈列ULN2804 周边八段驱动陈列ICLICL7106 3位ADC/驱动LCDICL7107 3位半ADC/驱动LEDICL7109 4位半ADC/驱动LEDICL7129 4位半ADC/LCD驱动ICL7135 ADC/LCD驱动BCD输出ICL7136 3位半CMOSADC/LCD驱动ICL7218 CMOS低功耗运算放大器ICL7650 整零运放斩波ICL7652 整零运放斩波ICL7660 CMOS直流-直流转换器ICL8038 函数信号发生器ICL8049 反对数放大器CACA3140 单BIMOS运行CA3240 单BIMOS运行UCUC3842 WM电流型控制器UC3845 PWM电流型控制器DSDS12887 非易失实时时钟芯片L3845 中继接口电路SGSG3524 PWM解调调制器SG3525 PWM解调调制器20106 前置放大器MTMT8814 8x12模拟交换矩阵MT8816 8x模拟交换矩阵MT8870 综合DTMF接收器MT8870 综合DTMF接收器MT8880 综合DTMF发生接收器MIC24LC01 128x8串行EEPROM24LC02 256x8串行EEPROM24LC04 512x8串行EEPROM24LC16 2Kx8串行EEPROM93LC46 64x16串行EEPROM93LC56 256x16串行EEPROM93LC66 512x8 256x16 EEPROMPIC16C52 384x12 单片机PIC16C54 512x12 单片机PCI16C56 512x12 单片机PIC16C57 2048x12 单片机ATAT24C01 128x8串行EEPROMAT24C02 256x8串行EEPROMAT24C04 512x8串行EEPROMAT24C16 2Kx8串行EEPROMAT93C46 64x16串行EEPROMAT93C56 256x16串行EEPROMATF16V8 FLASH200门ATF20V8 FLASH300门高速ATF22V10 FLASH500门高速低电流AT28C16 2Kx8CMOS并行EEPROMAT28C17 2Kx8CMOS并行EEPROMAT28C64 8Kx8并行EEPROMAT28C256 32Kx8并行EEPROMAT28F010 128Kx8并行EEPROMA29C040 512Kx8 FLASH EEPROMHM6116 2Kx8 CMOS 静态PAMHY6264 8Kx8 CMOS 静态RAMHM6264 8Kx8 CMOS 静态RAMIS62C64 8Kx8 高速CMOS 静态RAM HY62256 32Kx8 CMOS 静态RAMHM62256 32Kx8 CMOS 静态RAMHM628128 128Kx8 CMOS 静态RAMHM628256 256Kx8 CMOS 静态RAMHM628512 512Kx8 CMOS 静态RAM HM628512 512Kx8 CMOS 静态RAM TCMTCM5087 双音调发生器MM5832 实时钟电路TCTC14433 3位半A/D转换器TC232 并行/串行接口电路TC7106 3位半ADC/LCD驱动TC7107 3位半ADC/LED驱动TC7116 3位半ADC/LCD驱动带保TC7129 4位半ADC/LCDTC7135 4位半ADC/LCD，BCD输出TC7650 整零运放斩波7575107 四差分线驱动器75174 四差分线驱动器75175 三态四差分接收器75176 差分总线接收器75188 四线驱动器75189 四线驱动器75451 双外围驱动器75452 双外围驱动器门阵PAL16L8 FLASH200门PALCE16V8-25 FLASH200门PALCE16V8-25JC FLASH200门(贴片)ATF16V8-25PC FLASH200门GAL16V8-25LP FLASH200门GAL16V8-25LPI 工业级FLASH200门GALV8-20LD 军品级FLASH200门GAL16V8-15LP 军品级FLASH200门GAL16V8-15LPI 工业级FLASH200门PALCF20V8-25PC FLASH300门ATF20V8-25PC FLASH300门GAL20V8-25LP FLASH300门GAL20V8-25LPI 工业级FLASH门GAL20V8-20LD 军品级门GAL20V8-15LP 军品级门GAL20V8-15LPI 工业级FLASH门ATF22C10-25PC FLASH500门高速低电流ATF22C10-25PC FLASH500门高速低电流GAI22V10-25LP FLASH500门高速低电流PALCE22V10-15JC FLASH500门高速低电流8000Z80 CP CTC PIO S10LD8031AH 8位微处理器工业级8031 8位微处理器80C31 8位CMOST微处理器80C31NT 8位CMOST微处理器N80C31BH 8位CMOST微处理器贴片LD80C31BH 8位CMOST微处理器MD80C31BH 8位CMOST微处理器8032 8位微处理器LD8032AH 8位CMOST微处理器80C32 8位CMOS微控制器8039 8位微控制器80C39 8位微控制器8051 8位微控制器80C51 8位CMOS微控制器80C552 8位微控制器80C552新8位微控制器8080 8位微处理器8085 8位NMOS微处理器80C85 8位NMOS微处理器8086 16位NMOS微处理器80C86 CMOS 16位微处理器8087 数值协处理器8088 8位HMOS微处理器80C88 CMOS 8位HMOS微处理器8097 16位单片机8098 准16位微控制器8155 通用接口电路81C55 CMOS通用接口电路8212 时钟发生器和驱动器8228 系统控制和总线驱动器8237 DMA控制器82C37 CMOS DMA 控制器8243 扩展器82C43 CMOS I/O扩展器8250 异步通信接口电路82C50 CMOS 异步通信接口电路8251 串行通信接口电路MD8251A 异步通信接口电路82C51 CMOS 异步通信接口电路8253 可编程区间计数器82C53 CMOS 可编程区间计数器8254 可编程间隔定时器83C54 CMOS 可编程间隔定时器LP82C54 CMOS 可编程间隔定时器8255 可编程外围并行接口电路MD8255A 可编程外围并行接口电路82C55 CMOS 可编程外围并行接口8257 可编程DMA控制器8259 可编程中段控制器82C59 CMOS 可编程中段控制器8279 可编程键盘显示器接口电路82C79 CMOS 82798282 8位锁存器8283 8位锁存器8284 时钟发生器和驱动器8286 8位总线收发器8287 8位总线收发器8288 总线控制器82C88 CMOS 总线控制器87C196KB87C196KD8748 8位微控制器8749 8位微控制器8751 8位微控制器87C51 CMOS 8位控制器87C51FA CMOS 8位微控制器87C52 87C51加强型87C552 8位微控制器89C1051PC 1K8位FLASH单片机89C2051PC 2K8位FLASH单片机89C2051PI 2K8位FLASH单片机89C51PC 4K8位FLASH单片机89C51PI 4K8位FLASH单片机89C52PC 2K8位FLASH单片机89C52PI 2K8位FLASH单片机89C52JC 2K8位FLASH单片机89C55PC 20Kx8位存储器2716 8Kx8 NMOS EPROM27C16 2Kx8 NMOS EPROM2732 4Kx8 NMOS EPROM27C32 4Kx8 NMOS EPROM2764F 8Kx8 NMOS EPROM27C64F 8Kx8 NMOS EPROM2764ST 8Kx8 NMOS EPROM27C64ST 8Kx8 NMOS EPROM27C64NS 8Kx8 NMOS EPROM27128 16Kx8 NMOS EPROM27C128 16Kx8 NMOS EPROM27256 32Kx8 NMOS EPROM27C256 32Kx8 NMOS EPROMMD27C256 16Kx8 CMOS EPROM27HC256-45 16Kx8 高速CMOS EPROM 27512 64Kx8 NMOS EPROM27C512 64Kx8 NMOS EPROMMD27C512 64Kx8 NMOS EPROM27HC512-45 64Kx 高速CMOS EPROM 27C010 128Kx8 CMOS EPROM27HC010-30 128Kx8 CMOS EPROM27C020 256Kx8 CMOS EPROM27C040 512Kx8 CMOS EPROM27HC040-30 512Kx8 CMOS EPROM27C080 1024Kx8 CMOS EPROM2816 2Kx8 并行EEPROM28C16 2Kx8 CMOS 并行EEPROM 2817 2Kx8 并行EEPROM28C17 2Kx8 CMOS 并行EEPROM 2864 8Kx8 并行EEPROM28C64 8Kx8 CMOS 并行EEPROM28C64B15JC 8Kx8 CMOS 并行EEPROM 28C256 32Kx8 CMOS 并行EEPROM贴片28F004BCT28F010 128Kx 高速并行EEPROM贴片2810 128Kx 高速并行EEPROM贴片20F01628F020 256Kx 高速并行EEPROM贴片28F020-150 256Kx 高速并行EEPROM 贴片28F01AVP-1028F256 32Kx 高速并行EEPROM贴片28F256 32Kx 高速并行EEPROM贴片28F51-15029C010 128Kx8 FLASH EEPROM29EE01028LV010A-20JC贴片29F010-45JC29C040 512Kx8 FLASH EEPROM贴片29F040-90 512Kx8 FLASH EEPROM贴29C512-12JCAD AD1674KN 12位2KHZ带采保ADCAD202JY 小型2KHZ隔离放大器AD232JN 线路驱动接收器AD521JD 电阻设置精密仪放器AD574AJD 12位数模转换器AD590JH 宽温度范围传感器AD624AD 精密仪表放大器AD650JN 低线性误差压频转换器ADC0804 8位A/D转换器ADC0808 8位A/D转换器ADC0809 8位A/D转换器ADC0820 8位A/D转换器DAC0808 8位A/D转换器DAC0832 8位A/D转换器DAC1210 12位A/D转换器MAXMAX1487CPA ESD保护RS-485MAX1202CPE RS-232接口电路MAX232CPA RS-232接口电路MAX485CPA RS-485接口电路MAX488CPA RS-485接口电路MAX706CPA UP监控电路MAX7219CNA 8位显示驱动器MAX756CPA UP监控电路MAX483 UP监控电路MAX813TDATDA1521 低电平检测宽带放大器TDA2003A 单功率放大器5-10WTDA2030A 单功率放大器>10WTDA2822 桑苗双功率放大器逻辑器件资料型号规格性能说明CD4000 3输入双或非门1反相器CD4001 四2输入或非门CD4002 双4输入或非门CD4006 18级静态移位寄存器CD4007 双互补对加反相器CD4008 4位二进制并行进位全加器CD4009 六缓冲器/转换器（反相）CD4010 六缓冲器/转换器（同相）CD40100 32位双向静态移位寄存器CD40101 9位奇偶发生器/校验器CD40102 8位BCD可预置同步减法计数器CD40103 8位二进制可预置同步减法计数器CD40104 4位三态输出双向通用移位寄存器CD40105 先进先出寄存器CD40106 六施密特触发器CD40107 2输入双与非缓冲/驱动器CD40108 4×4多端寄存CD40109 四三态输出低到高电平移位器CD4011 四2输入与非门CD40110 十进制加减计数/译码/锁存/驱动CD40117 10线—4线BCD优先编码器CD4012 双4输入与非门CD4013 带置位/复位的双D触发器CD4014 8级同步并入串入/串出移位寄存器CD40147 10线—4线BCD优先编码器CD4015 双4位串入/并出移位寄存器CD4016 四双向开关CD40160 非同步复位可预置BCD计数器CD40161 非同步复位可预置二进制计数器CD40162 同步复位可预置BCD计数器CD40163 同步复位可预置二进制计数器CD4017 十进制计数器/分频器CD40174 六D触发器CD40175 四D触发器CD4018 可预置1/N计数器CD40181 4位算术逻辑单元CD40182 超前进位发生器CD4019 四与或选译门CD40192 可预制四位BCD计数器CD40193 可预制四位二进制计数器CD40194 4位双向并行存取通用移位寄存器CD4020 14级二进制串行计数/分频器CD40208 4×4多端寄存器CD4021 异步8位并入同步串入/串出寄存器CD4022 八进制计数器/分频器CD4023 三3输入与非门CD4024 7级二进制计数器CD4025 三3输入或非门CD40257 四2线-1线数据选择器/多路传输CD4026 7段显示十进制计数/分频器CD4027 带置位复位双J-K主从触发器CD4028 BCD-十进制译码器CD4029 可预制加/减（十/二进制）计数器CD4030 四异或门CD4031 64级静态移位寄存器CD4032 3位正逻辑串行加法器CD4033 十进制计数器/消隐7段显示CD4034 8位双向并、串入/并出寄存器CD4035 4位并入/并出移位寄存器CD4038 3位串行负逻辑加法器CD40CD40 12级二进制计数/分频器CD4041 四原码/补码缓冲器CD4042 四时钟控制D锁存器CD4043 四三态或非R/S锁存器CD4044 四三态与非R/S锁存器CD4045 21位计数器CD4046 PLL锁相环电路CD4047 单稳态、无稳态多谐振荡器CD4048 8输入端多功能可扩展三态门CD4049 六反相缓冲器/转换器CD4050 六同相缓冲器/转换器CD4051 8选1双向模拟开关CD4052 双4选1双向模拟开关CD4053 三2选1双向模拟开关CD4054 四位液晶显示驱动器CD4055 BCD—7段译码/液晶显示驱动器CD4056 BCD—7段译码/驱动器CD4059 可编程1/N计数器CD4060 14级二进制计数/分频/振荡器CD4063 四位数字比较器CD4066 四双向模拟开关CD4067 单16通道模拟开关CD4068 8输入端与非门CD4069 六反相器CD4070 四异或门CD4071 四2输入端或门CD4072 4输入端双或门CD4073 3输入端三与门CD4075 3输入端三或门CD4076 4位三态输出D寄存器CD4077 四异或非门CD4078 8输入端或非门CD4081 四2输入端与门CD4082 4输入端双与门CD4085 双2×2与或非门CD4086 2输入端可扩展四与或非门CD4089 二进制系数乘法器CD4093 四2输入端施密特触发器CD4094 8级移位存储总线寄存器CD4095 选通J-K同相输入主从触发器CD4096 选通J-K反相输入主从触发器CD4097 双8通道模拟开关CD4098 双单稳态多谐振荡器CD4099 八位可寻址锁存器恒流二极管型号恒定电流(ma)起始电压Us(V)动态电阻(MΩ)耐压分档(UHV)2DH00 ≤0.05<0.5 ≥8A:≥20 2DH01 0.1±0.05<0.8 ≥82DH02 0.2±0.05<1.5 ≥52DH03 0.3±0.05<1.5 ≥5B:≥30 2DH04 0.4±0.05<2 ≥2.52DH05 0.5±0.05<2 ≥2.52DH06 0.6±0.05<2 ≥2.5C:≥40 2DH07 0.7±0.05<2 ≥1.52DH08 0.8±0.05<3 ≥1.52DH09 0.9±0.05<3 ≥1D:≥50 2DH1 1±0.05<3 ≥12DH2 2±0.05<3 ≥0.52DH3 3±0.05<3.5 ≥0.42DH4 4±0.05<3.5 ≥0.32DH5 5±0.05<4.5 ≥0.25 2DH6 6±0.05<4.5 ≥0.15 2DH7 7±0.05<5 ≥0.15快恢复二极管国外型号Vr(V) If(A) Ifsm(A) VF(V)Trr(us)Ir(ua)适用机型ES1A 400 0.75 30 2.5 1.5 10 日立三洋EU1 400 0.35 15 2.5 0.4 10 东芝三洋EU01A 600 0.35 15 2.5 0.4 10 三洋EU2 400 1 15 1.4 0.3 10 三洋EU2Z 200 1 15 1.4 0.3 10 三洋EU3A 600 1.5 20 1.5 0.4 10 三洋RC2 600 1 20 1.5 0.4 10 松下RU3 800 1.5 20 1.5 0.4 10 三菱S5295G 400 0.5 30 2 0.4 10 东芝S5295J 600 0.5 30 1.5 0.4 10 东芝RGP10 600 1 30 1.3 0.4 10 胜利夏普RU2 600 1 20 1.5 0.4 10松下胜利NECSM1-02FRA 200 0.8 35 1 0.4 10 东芝TVR06 400 0.6 25 1.4 0.3 10 NECV09 400 0.8 35 1.6 0.4 10 日立胜利V09C 200 0.8 35 1.6 0.4 10 日立V11 日立IS2471 60 0.15 1 0.8 0.03 10 三菱IS1553 70 0.1 1 1.4 ---- 0.5 东芝IS1555 35 0.1 1 1.4 ---- 0.5 东芝3JH61 600 3 60 1.5 0.2 10 东芝变容二极管参数。

ENA1P-B28-L00128L中文资料(bourns)中文数据手册「EasyDatasheet - 矽搜」

.....................................................................................................................................-40 °C至+75°C（-40°F至167°F）存储温度范围..........................................................................................................................................-40 °C至+ 85°C（-40°F至+185°F） Humidity................................................................................................................................................................. MIL-STD-202,方法103B,条件B 振荡............................................................................................................................................................................................................................ 5G Shock............................................................................................................................................................................................................................... 50 G

集成电路英文代码对照

集成电路英文代码及中文对照（一）我的文摘2009-11-21 11:32:53 阅读111 评论0 字号：大中小订阅产品名称型号规格性能说明LMLM24J 四运放(军用级)LM148J 通用四运放LM1875T 无线电控制/接收器LM224J 四运放(工业级)LM258N 分离式双电源双运放LM2901N 四电压比较器LM2904N 四运放LM301AN 通用运算放大器LM308N 单比较器LM311P 单比较器LM317L 可调三端稳压器/100mALM317T 可调三端稳压器/1.5ALM317K 可调三端稳压器/3ALM318 高速宽带运放LM324K 通用四运放LM331N V-F/F-V转换器LM336-2.5V 基准电压电路LM336 5V 基准电压电路LM337T 基准电压电路1ALM338K 可调三端稳压器5ALM339N 四比较器LM348N 四741运放LM358N 低功耗双运放LM361N 高速差动比较器LM386N 声频功率放大器LM3914N 十段点线显示驱动LM393N 低功耗低失调双比较器LM399H 精密基准源(6.9)LM723CN 可调正式负稳压器LM733CN 视频放大器LM741J 单运放LM741CN 双运放NENE521 高速双差分比较器NE5532 双运放NE5534 双运放NE555N 单运放NE555J 时基电路军品极NE556 双级型双时基电路NE564 锁相环NE565 锁相环NE567 音调译码器NE592 视频放大器OPOP07 低噪声运放OP27 超低噪声精密运放OP37 超低噪声精密运放光电耦合4N25 晶体管输出4N25MC 晶体管输出4N26 晶体管输出4N27 晶体管输出4N28 晶体管输出4N29 达林顿输出4N30 达林顿输出4N31 达林顿输出4N32 达林顿输出4N33 达林顿输出4N33MC 达林顿输出4N35 达林顿输出4N36 晶体管输出4N37 晶体管输出4N38 晶体管输出4N39 可控硅输出6N135 高速光耦晶体管输出6N136 高速光耦晶体管输出6N137 高速光耦晶体管输出6N138 达林顿输出6N139 达林顿输出MOC3020 可控硅驱动输出MOC3021 可控硅驱动输出MOC3023 可控硅驱动输出MOC3030 可控硅驱动输出MOC3040 过零触发可控硅输出MOC3041 过零触发可控硅输出MOC3061 过零触发可控硅输出MOC3081 过零触发可控硅输出TLP521-1 单光耦TLP521-2 双光耦TLP521-4 四光耦TLP621 四光耦TIL113 达林顿输出TIL117 TLL逻辑输出PC814 单光耦PC817 单光耦H11A2 晶体管输出H11D1 高压晶体管输出H11G2 电阻达林顿输出LFLF347N 宽带JFET输入四运放LF351N 宽带JFET输入运放LF353N JFET输入宽带运放LF355N JFET输入运放LF357N JFET宽带非全裣运放LF398N 采样/保持电路LF412N 低偏差飘移输入运放MCMC1377 彩色电视编码器MC1403 精密电压基准源(2.5)MC1413 周边七段驱动阵列MC1416 周边七段驱动陈列MC14409 二进制脉冲拨号器MC14433 3位半A/D转换器MC14489 多字符LED显示驱动器MC145026 编码器VD5026 编码器MC145027 译码器VD5027 译码器MC145028 译码器MC145030 编码译码器MC145106 频率合成器MC145146 4位数据总线TLTL062 低功耗JEFT输入双运放TL072 低噪声JEFTTL082TL084TL431TL494ULNULN2003 周边七段驱动陈列ULN2004 周边七段驱动陈列ULN2803 周边八段驱动陈列ULN2804 周边八段驱动陈列ICLICL7106 3位ADC/驱动LCDICL7107 3位半ADC/驱动LEDICL7109 4位半ADC/驱动LEDICL7129 4位半ADC/LCD驱动ICL7135 ADC/LCD驱动BCD输出ICL7136 3位半CMOSADC/LCD驱动ICL7218 CMOS低功耗运算放大器ICL7650 整零运放斩波ICL7652 整零运放斩波ICL7660 CMOS直流-直流转换器ICL8038 函数信号发生器ICL8049 反对数放大器CACA3140 单BIMOS运行CA3240 单BIMOS运行UCUC3842 WM电流型控制器UC3845 PWM电流型控制器DSDS12887 非易失实时时钟芯片L3845 中继接口电路SGSG3524 PWM解调调制器SG3525 PWM解调调制器20106 前置放大器MTMT8814 8x12模拟交换矩阵MT8816 8x模拟交换矩阵MT8870 综合DTMF接收器MT8870 综合DTMF接收器MT8880 综合DTMF发生接收器MIC24LC01 128x8串行EEPROM24LC02 256x8串行EEPROM24LC04 512x8串行EEPROM24LC16 2Kx8串行EEPROM93LC46 64x16串行EEPROM93LC56 256x16串行EEPROM93LC66 512x8 256x16 EEPROMPIC16C52 384x12 单片机PIC16C54 512x12 单片机PCI16C56 512x12 单片机PIC16C57 2048x12 单片机ATAT24C01 128x8串行EEPROMAT24C02 256x8串行EEPROMAT24C04 512x8串行EEPROMAT24C16 2Kx8串行EEPROMAT93C46 64x16串行EEPROMAT93C56 256x16串行EEPROMATF16V8 FLASH200门ATF20V8 FLASH300门高速ATF22V10 FLASH500门高速低电流AT28C16 2Kx8CMOS并行EEPROMAT28C17 2Kx8CMOS并行EEPROMAT28C64 8Kx8并行EEPROMAT28C256 32Kx8并行EEPROMAT28F010 128Kx8并行EEPROMA29C040 512Kx8 FLASH EEPROMHM6116 2Kx8 CMOS 静态PAMHY6264 8Kx8 CMOS 静态RAMHM6264 8Kx8 CMOS 静态RAMIS62C64 8Kx8 高速CMOS 静态RAMHY62256 32Kx8 CMOS 静态RAMHM62256 32Kx8 CMOS 静态RAMHM628128 128Kx8 CMOS 静态RAMHM628256 256Kx8 CMOS 静态RAMHM628512 512Kx8 CMOS 静态RAMHM628512 512Kx8 CMOS 静态RAM TCMTCM5087 双音调发生器MM5832 实时钟电路TCTC14433 3位半A/D转换器TC232 并行/串行接口电路TC7106 3位半ADC/LCD驱动TC7107 3位半ADC/LED驱动TC7116 3位半ADC/LCD驱动带保TC7129 4位半ADC/LCDTC7135 4位半ADC/LCD，BCD输出TC7650 整零运放斩波7575107 四差分线驱动器75174 四差分线驱动器75175 三态四差分接收器75176 差分总线接收器75188 四线驱动器75189 四线驱动器75451 双外围驱动器75452 双外围驱动器集成电路英文代码及中文对照（二）我的文摘2009-11-21 11:37:11 阅读191 评论0 字号：大中小订阅。

LM285S8-2.5中文资料

1References Portable Meter References s Portable Test Instruments s Battery-Operated Systems s Panel MeterssCurrent Loop InstrumentationU SA OPPLICATIs 20µA to 20mA Operating Ranges Guaranteed 1% Initial Voltage Tolerance s Guaranteed 1Ω Dynamic Impedance sVery Low Power ConsumptionSFEATURE The LM185-2.5 is a two-terminal band gap reference diode that has been designed for applications which require precision performance with micropower opera-tion. The device provides guaranteed operation specifica-tions at currents as low as 20µA. The nominal voltage is 2.5V with both 1% and 2% tolerances available. Some additional features are: maximum dynamic impedance of 1Ω, low noise and excellent stability over time and tem-perature. The advanced design, processing and testing techniques make Linear’s LM185-2.5 a superior choice over previous designs. A circuit for cold junction compen-sation of a thermocouple is shown below.For applications requiring guaranteed temperature drift,see the LT1034 data sheet.D UESCRIPTIOU A OPPLICATITYPICAL REVERSE CURRENT (mA)0O U T P U T V O L T A G E C H A N G E (m V )4812160.01110100LM185-2.5 TA02–40.1Reverse Voltage ChangeThermocouple Cold Junction Compensator2kΩ2Reverse Breakdown Current................................ 30mA Forward Current................................................... 10mA Operating Temperature RangeLM185-2.5..................................... –55°C to 125°C LM285-2.5...................................... –40°C to 85°C LM385-2.5........................................... 0°C to 70°CA UG WA WUW A R BSOLUTEXI TI SStorage Temperature RangeLM185-2.5.................................... –65°C to 150°C LM285-2.5.................................... –65°C to 150°C LM385-2.5.................................... –65°C to 150°C Lead Temperature (Soldering, 10 sec.)................ 300°CELECTRICAL C C HARA TERISTICS(See Note 1)The q denotes specifications which apply over the operating temperature range.Note 1: All specifications are for T A = 25°C unless otherwise noted. For the LM185-2.5 T MIN = –55°C and T MAX = 125°C. For LM285-2.5, T MIN =–40°C and T MAX = 85°C. For LM385-2.5, T MIN = 0°C and T MAX = 70°C.Note 2: For very low initial tolerance, consult LT1004 data sheet. The LT1004 is a low cost, pin for pin substitution device. For guaranteed temperature coefficient consult the LT1034-2.5 data sheet.Note 3: Guaranteed but not tested.WUUPACKAGE/ORDER I FOR ATIO3C C HARA TERISTICSU WA TYPICAL PERFOR CE Reverse CharacteristicsForward CharacteristicsTemperature DriftFORWARD CURRENT (mA)0.4F O R W A R D V O L T AG E (V )0.81.21.60.01110100LM185-2.5 • TPC020.1TEMPERATURE (°C)–55R E F E R E N C E V O L T A G E (V )–152545125LM185-2.5 • TPC03–3556585105Reverse Dynamic ImpedanceReverse Dynamic ImpedanceNoise VoltageFREQUENCY (Hz)10D Y N A M I C I M PE D A N C E (Ω)1001k10k100kLM185-2.5 • TPC051010.11001k10k 1MFREQUENCY (Hz)600800100012001400101k 10k 100kLM185-2.5M • TPC06100400200N O I S E (n V /H z )Filtered Output NoiseResponse TimeInformation furnished by Linear Technology Corporation is believed to be accurate and reliable.However, no responsibility is assumed for its use. Linear Technology Corporation makes no represen-tation that the interconnection of circuits as described herein will not infringe on existing patent rights.CUTOFF FREQUENCY (Hz)100I N T E G R A T E D N O I S E (µV R M S )80100120100k1k 10kLM185-2.5 • TPC07604020TIME (µS)LM185-2.5 • TPC08V O L T A G E (V )REVERSE CURRENT (mA)1D Y N A M I C I M PE D A N C E (Ω)1010010000.01110100LM185-2.5 • TPC050.10.1REVERSE VOLTAGE (V)00.1R E V E R S E C U R R E N T (µA )1101000.51.0 1.52.0LM185-2.5 • TPC012.53.04Linear Technology Corporation1630 McCarthy Blvd., Milpitas, CA 95035-7487(408) 432-1900 qFAX : (408) 434-0507 qTELEX : 499-3977© S WA W CHE TI I C DAGRAREFERENCE FROM A 9V BATTERY+OPERATION OVER A WIDE SUPPLY RANGEV + ≤ 30V LM185-2.5 TA03LM334+–LM185-2.5 SD01U SA OPPLICATITYPICAL UPACKAGE DESCRIPTIODimensions in inches (millimeters) unless otherwise noted.H Package, 2-Lead TO-46 Metal CanZ package, 3-Lead TO-92 Plastic0.060 ± 0.010 Z3 1191T JMAX θJA θJC150°C 440°C/W 80°CWDIAT JMAX θJA100°C 160°C/WT JMAX θJA150°C 220°C/WS8 package, 8-Lead Plastic SOIC0.053 – 0.069 BSC。

LM136AH-2.5中文资料

LM136A-2.5QML,LM136A-2.5QML-SP SNOSAM3E–JULY2007–REVISED APPRIL2013LM136A-2.5QML2.5V Reference DiodeCheck for Samples:LM136A-2.5QML,LM136A-2.5QML-SPFEATURES DESCRIPTIONThe LM136A-2.5QML integrated circuit is a precision •Available with Radiation Specification2.5V shunt regulator diode.This monolithic IC voltage–Total Ionizing Dose100krad(Si)reference operates as a low-temperature-coefficient –ELDRS Free100krad(Si) 2.5V zener with0.2Ωdynamic impedance.A thirdterminal on the LM136A-2.5QML allows the reference •Low Temperature Coefficientvoltage and temperature coefficient to be trimmed •Wide Operating Current of400μA to10mAeasily.•Specified Temperature StabilityThe LM136A-2.5QML is useful as a precision2.5V •Easily Trimmed for Minimum Temperature Drift low voltage reference for digital voltmeters,power•Fast Turn-on supplies or op amp circuitry.The 2.5V make itconvenient to obtain a stable reference from5V logic •3–Lead Transistor Packagesupplies.Further,since the LM136A-2.5QMLoperates as a shunt regulator,it can be used aseither a positive or negative voltage reference. Connection DiagramBottom ViewFigure1.TO PackageSee Package Number NDV0003HPlease be aware that an important notice concerning availability,standard warranty,and use in critical applications ofTexas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.All trademarks are the property of their respective owners.PRODUCTION DATA information is current as of publication date.Copyright©2007–2013,Texas Instruments Incorporated Products conform to specifications per the terms of the TexasLM136A-2.5QML,LM136A-2.5QML-SPSNOSAM3E–JULY2007–REVISED Schematic DiagramTypical ApplicationsFigure2. 2.5V Reference†Adjust to2.490V*Any silicon signal diodeFigure3. 2.5V Reference with MinimumTemperature Coefficient2Submit Documentation Feedback Copyright©2007–2013,Texas Instruments IncorporatedLM136A-2.5QML,LM136A-2.5QML-SP SNOSAM3E–JULY2007–REVISED APPRIL2013Figure4.Wide Input Range ReferenceThese devices have limited built-in ESD protection.The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates.Copyright©2007–2013,Texas Instruments Incorporated Submit Documentation Feedback3LM136A-2.5QML,LM136A-2.5QML-SPSNOSAM3E–JULY2007–REVISED Absolute Maximum Ratings(1)Reverse Current15mAForward Current10mAStorage Temperature−60°C≤T A≤+150°C Operating Temperature Range(2)−55°C≤T A≤+125°C Maximum Junction Temperature(T J)(2)+150°CLead Temperature(Soldering10seconds)300°CThermal ResistanceθJA Still Air Flow354°C/W500LF/Min Air Flow77°C/WθJC46°C/WESD Rating(3)1,000V(1)Absolute Maximum Ratings indicate limits beyond which damage to the device may occur.Operating Ratings indicate conditions forwhich the device is functional,but do not ensure specific performance limits.For ensured specifications and test conditions,see the Electrical Characteristics.The ensured specifications apply only for the test conditions listed.Some performance characteristics may degrade when the device is not operated under the listed test conditions.(2)The maximum power dissipation must be derated at elevated temperatures and is dictated by T Jmax(maximum junction temperature),θJA(package junction to ambient thermal resistance),and T A(ambient temperature).The maximum allowable power dissipation at any temperature is P Dmax=(T Jmax-T A)/θJA or the number given in the Absolute Maximum Ratings,whichever is lower.(3)Human body model,1.5KΩin series with100pF.Quality Conformance InspectionMil-Std-883,Method5005-Group ASubgroup Description Temp°C 1Static tests at+252Static tests at+1253Static tests at-554Dynamic tests at+255Dynamic tests at+1256Dynamic tests at-557Functional tests at+258A Functional tests at+1258B Functional tests at-559Switching tests at+2510Switching tests at+12511Switching tests at-5512Settling time at+2513Settling time at+12514Settling time at-554Submit Documentation Feedback Copyright©2007–2013,Texas Instruments IncorporatedLM136A-2.5QML,LM136A-2.5QML-SP SNOSAM3E–JULY2007–REVISED APPRIL2013LM136A-2.5QML Electrical Characteristics DC Parameters(1)(2)The following conditions apply,unless otherwise specified.I R=1mASub-Parameter Test Conditions Notes Min Max UnitgroupsI Adj Adjust Current V Adj=0.7V-125+125µA1,2,3ΔV Z 6.0mV1 Delta Zener Voltage0.4mA≤I Z≤10mA10mV2,32.46 2.51V155V Adj=Open2.44 2.54V2,3V Z Zener Voltage2.39 2.49V1V Adj=0.7V2.29 2.49V2,3V Adj=1.9V 2.49 2.69V1,2,3See(3)0.6Ω1Z RD Reverse Dynamic ImpedanceSee(3) 1.0Ω2,3V Stab Temperature Stability V Z=Adjusted to2.490V18mV2,3(1)Pre and post irradiation limits are identical to those listed under DC electrical characteristics.These parts may be dose rate sensitive ina space environment and may demonstrate enhanced low dose rate effect.Radiation end point limits for the noted parameters arespecified only for the conditions as specified in Mil-Std-883,Method1019.(2)Low dose rate testing has been performed on a wafer-by-wafer basis,per test method1019condition D of MIL-STD-883,with noenhanced low dose rate sensitivity(ELDRS)effect.(3)Parameter tested go-no-go only.LM136A-2.5QML Electrical Characteristics DC Drift Parameters(1)(2)Delta calculations are performed on QMLV devices at Group B,Subgroup5only.Sub-Parameter Test Conditions Notes Min Max UnitgroupsV Adj=Open−10+10mV1V Z Zener Voltage V Adj=0.7V−10+10mV1V Adj=1.9V−10+10mV1(1)Pre and post irradiation limits are identical to those listed under DC electrical characteristics.These parts may be dose rate sensitive ina space environment and may demonstrate enhanced low dose rate effect.Radiation end point limits for the noted parameters arespecified only for the conditions as specified in Mil-Std-883,Method1019.(2)Low dose rate testing has been performed on a wafer-by-wafer basis,per test method1019condition D of MIL-STD-883,with noenhanced low dose rate sensitivity(ELDRS)effect.Copyright©2007–2013,Texas Instruments Incorporated Submit Documentation Feedback5LM136A-2.5QML,LM136A-2.5QML-SPSNOSAM3E–JULY2007–REVISED Typical Performance CharacteristicsReverse Voltage Change Zener Noise VoltageFigure5.Figure6.Dynamic Impedance Response TimeFigure7.Figure8.Reverse Characteristics Forward CharacteristicsFigure9.Figure10.6Submit Documentation Feedback Copyright©2007–2013,Texas Instruments IncorporatedLM136A-2.5QML,LM136A-2.5QML-SP SNOSAM3E–JULY2007–REVISED APPRIL2013 Typical Performance Characteristics(continued)Temperature DriftFigure11.Copyright©2007–2013,Texas Instruments Incorporated Submit Documentation Feedback7LM136A-2.5QML,LM136A-2.5QML-SPSNOSAM3E–JULY2007–REVISED APPLICATION HINTSThe LM136voltage reference is much easier to use than ordinary zener diodes.It's low impedance and wide operating current range simplify biasing in almost any circuit.Further,either the breakdown voltage or the temperature coefficient can be adjusted to optimize circuit performance.Figure12shows an LM136with a10k potentiometer for adjusting the reverse breakdown voltage.With the addition of R1the breakdown voltage can be adjusted without affecting the temperature coefficient of the device. The adjustment range is usually sufficient to adjust for both the initial device tolerance and inaccuracies in buffer circuitry.If minimum temperature coefficient is desired,two diodes can be added in series with the adjustment potentiometer as shown in Figure13.When the device is adjusted to2.490V the temperature coefficient is minimized.Almost any silicon signal diode can be used for this purpose such as a1N914,1N4148or a1N457. For proper temperature compensation the diodes should be in the same thermal environment as the LM136.It is usually sufficient to mount the diodes near the LM136on the printed circuit board.The absolute resistance of R1 is not critical and any value from2k to20k will work.Figure12.LM136With Pot for Adjustmentof Breakdown Voltage(Trim Range=±120mV typical)Figure13.Temperature Coefficient Adjustment(Trim Range=±70mV typical)8Submit Documentation Feedback Copyright©2007–2013,Texas Instruments IncorporatedLM136A-2.5QML,LM136A-2.5QML-SP SNOSAM3E–JULY2007–REVISED APPRIL2013*L160turns#16wire on Arnold Core A-254168-2†Efficiency≈80%Figure14.Low Cost2Amp Switching Regulator†Figure15.Precision Power Regulator with Low Temperature CoefficientFigure16.5V CrowbarCopyright©2007–2013,Texas Instruments Incorporated Submit Documentation Feedback9LM136A-2.5QML,LM136A-2.5QML-SPSNOSAM3E–JULY2007–REVISED *Does not affect temperature coefficientFigure17.Trimmed2.5V Reference withTemperature Coefficient Independentof Breakdown VoltageFigure18.Adjustable Shunt RegulatorFigure19.Linear Ohmmeter10Submit Documentation Feedback Copyright©2007–2013,Texas Instruments IncorporatedLM136A-2.5QML,LM136A-2.5QML-SP SNOSAM3E–JULY2007–REVISED APPRIL2013Figure20.Op Amp with Output ClampedFigure21.Bipolar Output ReferenceFigure22. 2.5V Square Wave CalibratorCopyright©2007–2013,Texas Instruments Incorporated Submit Documentation Feedback11LM136A-2.5QML,LM136A-2.5QML-SPSNOSAM3E–JULY2007–REVISED Figure23.5V Buffered ReferenceFigure24.Low Noise Buffered Reference12Submit Documentation Feedback Copyright©2007–2013,Texas Instruments IncorporatedLM136A-2.5QML,LM136A-2.5QML-SP SNOSAM3E–JULY2007–REVISED APPRIL2013REVISION HISTORYDate Released Revision Section Changes 07/06/07A New Release,Corporate format2MDS datasheets converted into one corporatedatasheet format.MNLM136–2.5–X Rev0A0andMNLM136A-2.5–X-RH.The ELDRS Part has alsobeen added.Rev.0E0will be archived.10/16/2010B Data Sheet Title,General Description,Order Update with current device information and format.Information,Electrical Characteristics,Removed all references to the LM136-2.5Non“A”Application Hints package NSID no longer offered.Added Die NSID's todata sheet.Revision A will be Archived.Changes from Revision D(April2013)to Revision E Page •Changed layout of National Data Sheet to TI format (12)Copyright©2007–2013,Texas Instruments Incorporated Submit Documentation Feedback13PACKAGING INFORMATION(1) The marketing status values are defined as follows:ACTIVE: Product device recommended for new designs.LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.PREVIEW: Device has been announced but is not in production. Samples may or may not be available.OBSOLETE: TI has discontinued the production of the device.(2) Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check /productcontent for the latest availability information and additional product content details.TBD: The Pb-Free/Green conversion plan has not been defined.Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above.Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight in homogeneous material)(3) MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.Addendum-Page 1(4) There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device.(5) Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation of the previous line and the two combined represent the entire Device Marking for that device.Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals. TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.OTHER QUALIFIED VERSIONS OF LM136A-2.5QML, LM136A-2.5QML-SP :•Military: LM136A-2.5QML•Space: LM136A-2.5QML-SPNOTE: Qualified Version Definitions:•Military - QML certified for Military and Defense Applications•Space - Radiation tolerant, ceramic packaging and qualified for use in Space-based applicationAddendum-Page 2MECHANICAL DATA NDV0003HIMPORTANT NOTICETexas Instruments Incorporated and its subsidiaries(TI)reserve the right to make corrections,enhancements,improvements and other changes to its semiconductor products and services per JESD46,latest issue,and to discontinue any product or service per JESD48,latest issue.Buyers should obtain the latest relevant information before placing orders and should verify that such information is current and complete.All semiconductor products(also referred to herein as“components”)are sold subject to TI’s terms and conditions of sale supplied at the time of order acknowledgment.TI warrants performance of its components to the specifications applicable at the time of sale,in accordance with the warranty in TI’s terms and conditions of sale of semiconductor products.Testing and other quality control techniques are used to the extent TI deems necessary to support this warranty.Except where mandated by applicable law,testing of all parameters of each component is not necessarily performed.TI assumes no liability for applications assistance or the design of Buyers’products.Buyers are responsible for their products and applications using TI components.To minimize the risks associated with Buyers’products and applications,Buyers should provide adequate design and operating safeguards.TI does not warrant or represent that any license,either express or implied,is granted under any patent right,copyright,mask work right,or other intellectual property right relating to any combination,machine,or process in which TI components or services are rmation published by TI regarding third-party products or services does not constitute a license to use such products or services or a warranty or endorsement e of such information may require a license from a third party under the patents or other intellectual property of the third party,or a license from TI under the patents or other intellectual property of TI.Reproduction of significant portions of TI information in TI data books or data sheets is permissible only if reproduction is without alteration and is accompanied by all associated warranties,conditions,limitations,and notices.TI is not responsible or liable for such altered rmation of third parties may be subject to additional restrictions.Resale of TI components or services with statements different from or beyond the parameters stated by TI for that component or service voids all express and any implied warranties for the associated TI component or service and is an unfair and deceptive business practice. TI is not responsible or liable for any such statements.Buyer acknowledges and agrees that it is solely responsible for compliance with all legal,regulatory and safety-related requirements concerning its products,and any use of TI components in its applications,notwithstanding any applications-related information or support that may be provided by TI.Buyer represents and agrees that it has all the necessary expertise to create and implement safeguards which anticipate dangerous consequences of failures,monitor failures and their consequences,lessen the likelihood of failures that might cause harm and take appropriate remedial actions.Buyer will fully indemnify TI and its representatives against any damages arising out of the use of any TI components in safety-critical applications.In some cases,TI components may be promoted specifically to facilitate safety-related applications.With such components,TI’s goal is to help enable customers to design and create their own end-product solutions that meet applicable functional safety standards and requirements.Nonetheless,such components are subject to these terms.No TI components are authorized for use in FDA Class III(or similar life-critical medical equipment)unless authorized officers of the parties have executed a special agreement specifically governing such use.Only those TI components which TI has specifically designated as military grade or“enhanced plastic”are designed and intended for use in military/aerospace applications or environments.Buyer acknowledges and agrees that any military or aerospace use of TI components which have not been so designated is solely at the Buyer's risk,and that Buyer is solely responsible for compliance with all legal and regulatory requirements in connection with such use.TI has specifically designated certain components as meeting ISO/TS16949requirements,mainly for automotive use.In any case of use of non-designated products,TI will not be responsible for any failure to meet ISO/TS16949.Products ApplicationsAudio /audio Automotive and Transportation /automotiveAmplifiers Communications and Telecom /communicationsData Converters Computers and Peripherals /computersDLP®Products Consumer Electronics /consumer-appsDSP Energy and Lighting /energyClocks and Timers /clocks Industrial /industrialInterface Medical /medicalLogic Security /securityPower Mgmt Space,Avionics and Defense /space-avionics-defense Microcontrollers Video and Imaging /videoRFID OMAP Applications Processors /omap TI E2E Community Wireless Connectivity /wirelessconnectivityMailing Address:Texas Instruments,Post Office Box655303,Dallas,Texas75265Copyright©2013,Texas Instruments Incorporated。

385B25中文资料

PACKAGING INFORMATIONOrderable Device Status(1)PackageType PackageDrawingPins PackageQtyEco Plan(2)Lead/Ball Finish MSL Peak Temp(3)LM285D-2-5ACTIVE SOIC D875Green(RoHS&no Sb/Br)CU NIPDAU Level-1-260C-UNLIMLM285DE4-2-5ACTIVE SOIC D875Green(RoHS&no Sb/Br)CU NIPDAU Level-1-260C-UNLIMLM285DG4-2-5ACTIVE SOIC D875Green(RoHS&no Sb/Br)CU NIPDAU Level-1-260C-UNLIMLM285DR-2-5ACTIVE SOIC D82500Green(RoHS&no Sb/Br)CU NIPDAU Level-1-260C-UNLIMLM285DRE4-2-5ACTIVE SOIC D82500Green(RoHS&no Sb/Br)CU NIPDAU Level-1-260C-UNLIMLM285DRG4-2-5ACTIVE SOIC D82500Green(RoHS&no Sb/Br)CU NIPDAU Level-1-260C-UNLIMLM285LP-2-5ACTIVE TO-92LP31000Pb-Free(RoHS)CU SN N/A for Pkg TypeLM285LPE3-2-5ACTIVE TO-92LP31000Pb-Free(RoHS)CU SN N/A for Pkg TypeLM285LPR-2-5ACTIVE TO-92LP32000Pb-Free(RoHS)CU SN N/A for Pkg TypeLM285LPRE3-2-5ACTIVE TO-92LP32000Pb-Free(RoHS)CU SN N/A for Pkg TypeLM385BD-2-5ACTIVE SOIC D875Green(RoHS&no Sb/Br)CU NIPDAU Level-1-260C-UNLIMLM385BDE4-2-5ACTIVE SOIC D875Green(RoHS&no Sb/Br)CU NIPDAU Level-1-260C-UNLIMLM385BDG4-2-5ACTIVE SOIC D875Green(RoHS&no Sb/Br)CU NIPDAU Level-1-260C-UNLIMLM385BDR-2-5ACTIVE SOIC D82500Green(RoHS&no Sb/Br)CU NIPDAU Level-1-260C-UNLIMLM385BDRE4-2-5ACTIVE SOIC D82500Green(RoHS&no Sb/Br)CU NIPDAU Level-1-260C-UNLIMLM385BDRG4-2-5ACTIVE SOIC D82500Green(RoHS&no Sb/Br)CU NIPDAU Level-1-260C-UNLIMLM385BLP-2-5ACTIVE TO-92LP31000Pb-Free(RoHS)CU SN N/A for Pkg TypeLM385BLPE3-2-5ACTIVE TO-92LP31000Pb-Free(RoHS)CU SN N/A for Pkg TypeLM385BLPR-2-5ACTIVE TO-92LP32000Pb-Free(RoHS)CU SN N/A for Pkg TypeLM385BLPRE3-2-5ACTIVE TO-92LP32000Pb-Free(RoHS)CU SN N/A for Pkg TypeLM385BPW-2-5ACTIVE TSSOP PW8150Green(RoHS&no Sb/Br)CU NIPDAU Level-1-260C-UNLIMLM385BPWE4-2-5ACTIVE TSSOP PW8150Green(RoHS&no Sb/Br)CU NIPDAU Level-1-260C-UNLIMLM385BPWG4-2-5ACTIVE TSSOP PW8150Green(RoHS&no Sb/Br)CU NIPDAU Level-1-260C-UNLIMLM385BPWR-2-5ACTIVE TSSOP PW82000Green(RoHS&no Sb/Br)CU NIPDAU Level-1-260C-UNLIMLM385BPWRE4-2-5ACTIVE TSSOP PW82000Green(RoHS&no Sb/Br)CU NIPDAU Level-1-260C-UNLIMOrderable Device Status(1)PackageType PackageDrawingPins PackageQtyEco Plan(2)Lead/Ball Finish MSL Peak Temp(3)LM385BPWRG4-2-5ACTIVE TSSOP PW82000Green(RoHS&no Sb/Br)CU NIPDAU Level-1-260C-UNLIMLM385D-2-5ACTIVE SOIC D875Green(RoHS&no Sb/Br)CU NIPDAU Level-1-260C-UNLIMLM385DE4-2-5ACTIVE SOIC D875Green(RoHS&no Sb/Br)CU NIPDAU Level-1-260C-UNLIMLM385DG4-2-5ACTIVE SOIC D875Green(RoHS&no Sb/Br)CU NIPDAU Level-1-260C-UNLIMLM385DR-2-5ACTIVE SOIC D82500Green(RoHS&no Sb/Br)CU NIPDAU Level-1-260C-UNLIMLM385DRE4-2-5ACTIVE SOIC D82500Green(RoHS&no Sb/Br)CU NIPDAU Level-1-260C-UNLIMLM385DRG4-2-5ACTIVE SOIC D82500Green(RoHS&no Sb/Br)CU NIPDAU Level-1-260C-UNLIMLM385LP-2-5ACTIVE TO-92LP31000Pb-Free(RoHS)CU SN N/A for Pkg TypeLM385LPE3-2-5ACTIVE TO-92LP31000Pb-Free(RoHS)CU SN N/A for Pkg TypeLM385LPR-2-5ACTIVE TO-92LP32000Pb-Free(RoHS)CU SN N/A for Pkg TypeLM385LPRE3-2-5ACTIVE TO-92LP32000Pb-Free(RoHS)CU SN N/A for Pkg TypeLM385PW-2-5ACTIVE TSSOP PW8150Green(RoHS&no Sb/Br)CU NIPDAU Level-1-260C-UNLIMLM385PWE4-2-5ACTIVE TSSOP PW8150Green(RoHS&no Sb/Br)CU NIPDAU Level-1-260C-UNLIMLM385PWG4-2-5ACTIVE TSSOP PW8150Green(RoHS&no Sb/Br)CU NIPDAU Level-1-260C-UNLIMLM385PWR-2-5ACTIVE TSSOP PW82000Green(RoHS&no Sb/Br)CU NIPDAU Level-1-260C-UNLIMLM385PWRE4-2-5ACTIVE TSSOP PW82000Green(RoHS&no Sb/Br)CU NIPDAU Level-1-260C-UNLIMLM385PWRG4-2-5ACTIVE TSSOP PW82000Green(RoHS&no Sb/Br)CU NIPDAU Level-1-260C-UNLIM(1)The marketing status values are defined as follows:ACTIVE:Product device recommended for new designs.LIFEBUY:TI has announced that the device will be discontinued,and a lifetime-buy period is in effect.NRND:Not recommended for new designs.Device is in production to support existing customers,but TI does not recommend using this part in a new design.PREVIEW:Device has been announced but is not in production.Samples may or may not be available.OBSOLETE:TI has discontinued the production of the device.(2)Eco Plan-The planned eco-friendly classification:Pb-Free(RoHS),Pb-Free(RoHS Exempt),or Green(RoHS&no Sb/Br)-please check /productcontent for the latest availability information and additional product content details.TBD:The Pb-Free/Green conversion plan has not been defined.Pb-Free(RoHS):TI's terms"Lead-Free"or"Pb-Free"mean semiconductor products that are compatible with the current RoHS requirements for all6substances,including the requirement that lead not exceed0.1%by weight in homogeneous materials.Where designed to be soldered at high temperatures,TI Pb-Free products are suitable for use in specified lead-free processes.Pb-Free(RoHS Exempt):This component has a RoHS exemption for either1)lead-based flip-chip solder bumps used between the die and package,or2)lead-based die adhesive used between the die and leadframe.The component is otherwise considered Pb-Free(RoHS compatible)as defined above.Green(RoHS&no Sb/Br):TI defines"Green"to mean Pb-Free(RoHS compatible),and free of Bromine(Br)and Antimony(Sb)based flame retardants(Br or Sb do not exceed0.1%by weight in homogeneous material)(3)MSL,Peak Temp.--The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications,and peak solder temperature.Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided.TI bases its knowledge and belief on information provided by third parties,and makes no representation or warranty as to the accuracy of such information.Efforts are underway to better integrate information from third parties.TI has taken and continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.TI and TI suppliers consider certain information to be proprietary,and thus CAS numbers and other limited information may not be available for release.In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s)at issue in this document sold by TI to Customer on an annual basis.TAPE AND REEL INFORMATION*All dimensions are nominal Device Package Type Package DrawingPinsSPQ Reel Diameter (mm)Reel Width W1(mm)A0(mm)B0(mm)K0(mm)P1(mm)W (mm)Pin1Quadrant LM285DR-2-5SOICD 82500330.012.4 6.4 5.2 2.18.012.0Q1LM385BDR-2-5SOICD 82500330.012.4 6.4 5.2 2.18.012.0Q1LM385BPWR-2-5TSSOPPW 82000330.012.47.0 3.6 1.68.012.0Q1LM385DR-2-5SOICD 82500330.012.4 6.4 5.2 2.18.012.0Q1LM385PWR-2-5TSSOP PW 82000330.012.47.0 3.6 1.68.012.0Q1*All dimensions are nominalDevice Package Type Package Drawing Pins SPQ Length(mm)Width(mm)Height(mm) LM285DR-2-5SOIC D8*******.5338.120.6 LM385BDR-2-5SOIC D8*******.5338.120.6 LM385BPWR-2-5TSSOP PW82000346.0346.029.0 LM385DR-2-5SOIC D8*******.5338.120.6 LM385PWR-2-5TSSOP PW82000346.0346.029.0IMPORTANT NOTICETexas Instruments Incorporated and its subsidiaries(TI)reserve the right to make corrections,modifications,enhancements,improvements, and other changes to its products and services at any time and to discontinue any product or service without notice.Customers should obtain the latest relevant information before placing orders and should verify that such information is current and complete.All products are sold subject to TI’s terms and conditions of sale supplied at the time of order acknowledgment.TI warrants performance of its hardware products to the specifications applicable at the time of sale in accordance with TI’s standard warranty.Testing and other quality control techniques are used to the extent TI deems necessary to support this warranty.Except where mandated by government requirements,testing of all parameters of each product is not necessarily performed.TI assumes no liability for applications assistance or customer product design.Customers are responsible for their products and applications using TI components.To minimize the risks associated with customer products and applications,customers should provide adequate design and operating safeguards.TI does not warrant or represent that any license,either express or implied,is granted under any TI patent right,copyright,mask work right, or other TI intellectual property right relating to any combination,machine,or process in which TI products or services are rmation published by TI regarding third-party products or services does not constitute a license from TI to use such products or services or a warranty or endorsement e of such information may require a license from a third party under the patents or other intellectual property of the third party,or a license from TI under the patents or other intellectual property of TI.Reproduction of TI information in TI data books or data sheets is permissible only if reproduction is without alteration and is accompanied by all associated warranties,conditions,limitations,and notices.Reproduction of this information with alteration is an unfair and deceptive business practice.TI is not responsible or liable for such altered rmation of third parties may be subject to additional restrictions.Resale of TI products or services with statements different from or beyond the parameters stated by TI for that product or service voids all express and any implied warranties for the associated TI product or service and is an unfair and deceptive business practice.TI is not responsible or liable for any such statements.TI products are not authorized for use in safety-critical applications(such as life support)where a failure of the TI product would reasonably be expected to cause severe personal injury or death,unless officers of the parties have executed an agreement specifically governing such use.Buyers represent that they have all necessary expertise in the safety and regulatory ramifications of their applications,and acknowledge and agree that they are solely responsible for all legal,regulatory and safety-related requirements concerning their products and any use of TI products in such safety-critical applications,notwithstanding any applications-related information or support that may be provided by TI.Further,Buyers must fully indemnify TI and its representatives against any damages arising out of the use of TI products in such safety-critical applications.TI products are neither designed nor intended for use in military/aerospace applications or environments unless the TI products are specifically designated by TI as military-grade or"enhanced plastic."Only products designated by TI as military-grade meet military specifications.Buyers acknowledge and agree that any such use of TI products which TI has not designated as military-grade is solely at the Buyer's risk,and that they are solely responsible for compliance with all legal and regulatory requirements in connection with such use. TI products are neither designed nor intended for use in automotive applications or environments unless the specific TI products are designated by TI as compliant with ISO/TS16949requirements.Buyers acknowledge and agree that,if they use any non-designated products in automotive applications,TI will not be responsible for any failure to meet such requirements.Following are URLs where you can obtain information on other Texas Instruments products and application solutions:Products ApplicationsAmplifiers AudioData Converters AutomotiveDSP BroadbandClocks and Timers Digital ControlInterface MedicalLogic MilitaryPower Mgmt Optical NetworkingMicrocontrollers SecurityRFID TelephonyRF/IF and ZigBee®Solutions Video&ImagingWirelessMailing Address:Texas Instruments,Post Office Box655303,Dallas,Texas75265Copyright©2008,Texas Instruments Incorporated。

集成电路大全

四2输入异或非门
SN74LS259
8位可寻址锁存器
SN74LS275
七位树型乘法器
SN74LS261
2x4位二进制乘发器
SN74LS279
四R－S触发器
SN74LS273
八进制D型触发器
SN74LS283
4位二进制全加器
SN74LS276
四J－K触发器
SN74LS293
4位二进制计数器
SN74LS280
四3态总线缓冲器
SN74LS133
13输入与非门
SN74LS132
二输入与非触发器
SN74LS137
地址锁存3－8线译码器
SN74LS136
四异或门
SN74LS139
双2－4线译码－转换器
SN74LS138
3－8线译码/转换器
SN74LS147
10－4线优先编码器
SN74LS145
BCD十进制译码/驱动器
双J－K负沿触发器
SN74LS112
双J－K负沿触发器
SN74LS121
单稳态多谐振荡器
SN74LS114
双J－K负沿触发器
SN74LS123
双稳态多谐振荡器
SN74LS122
单稳态多谐振荡器
SN74LS125
三态缓冲器
SN74LS124
双压控振荡器
SN74LS131
3－8线译码器
SN74LS126
四输入端与非缓冲器
SN74LS38
双2输入与非缓冲器
SN74LS40
四输入端与非缓冲器
SN74LS42
BCD－十进制译码器
SN74LS47
BCD－七段译码驱动器
SN74LS48

低功耗运算放大器型号说明书

引脚接线图图1. 8引脚MSOP 封装图2. 8引脚LFCSP 封装图3. 输出电压(V OH )至供电轨与负载电流的关系One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.Tel: 781.329.4700 ©2013 Analog Devices, Inc. All rights reserved.Technical Support Rev. 0Document FeedbackInformation furnished by Analog Devices is believed to be accurate and reliable. However , no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. Speci cations subject to change without notice. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. T rademarks and registered trademarks are the property of their respective owners.ADI 中文版数据手册是英文版数据手册的译文，敬请谅解翻译中可能存在的语言组织或翻译错误，ADI 不对翻译中存在的差异或由此产生的错误负责。

如需确认任何词语的准确性，请参考ADI 提供的最新英文版数据手册。

LM136中文资料

Original Creation Date: 07/10/95Last Update Date: 12/13/99Last Major Revision Date: 12/03/99MNLM136-2.5-X REV 0A0MICROCIRCUIT DATA SHEET2.5V REFERENCE DIODEGeneral DescriptionThe LM136-2.5 integrated circuit is a precision 2.5V shunt regulator diode. Thismonolithic IC voltage reference operates as a low-temperature-coefficient 2.5V zener with 0.2 Ohms dynamic impedance. A third terminal on ther LM136-2.5 allows the reference voltage and temperature coefficient to be trimmed easily.The LM136-2.5 is useful as a precision 2.5V low voltage reference for digital voltmeters,power supplies or op amp circuitry. The 2.5V makes it convenient to obtain a stable reference from 5V logic supplies. Further, since the LM136-2.5 operates as a shunt regulator, it can be used as either a positive or negative voltage reference.NS Part NumbersLM136H-2.5/883Industry Part NumberLM136Prime DieLM136ProcessingMIL-STD-883, Method 5004Quality Conformance InspectionMIL-STD-883, Method 5005Subgrp Description Temp ( C)o 1Static tests at +252Static tests at +1253Static tests at -554Dynamic tests at +255Dynamic tests at +1256Dynamic tests at -557Functional tests at +258A Functional tests at +1258B Functional tests at -559Switching tests at +2510Switching tests at +12511Switching tests at-55MICROCIRCUIT DATA SHEET MNLM136-2.5-X REV 0A0Features- Low temperature coefficient- Wide operating current of 400uA to 10mA- 0.2 Ohms dynamic impedance- +1% initial tolerance available- Guaranteed temperature stability- Easily trimmed for minimum temperature drift- Fast turn-on- Three lead transistor packageMICROCIRCUIT DATA SHEET MNLM136-2.5-X REV 0A0(Absolute Maximum Ratings)(Note 1)Reverse Current15mAForward Current10mAStorage Temperature-60 C to +150 COperating Ambient Temperature(Note 2)-55 C to +125 CMaximum Junction Temperture(Note 2)150 CLead Temperture(Soldering, 10 Seconds)300 CThermal ResistanceThetaJA(Still Air Flow)354 C/W(500LF/Min Air Flow)77 C/WThetaJC46 C/WPackage Weight(Typical)TBDESD Rating(Note 3)1000VNote 1:Absolute Maximum Ratings indicate limits beyond which damage to the device may occur.Operating Ratings indicate conditions for which the device is functional, but do notguaranteed specific performance limits. For guaranteed specifications and testconditions, see the Electrical Characteristics. The guaranteed specifications applyonly for the test conditions listed. Some performance characteristics may degradewhen the device is not operated under the listed test conditions.Note 2:The maximum power dissipation must be derated at elevated temperatures and isdictated by Tjmax (maximum junction temperature), ThetaJA (package junction toambient thermal resistance), and TA (ambient temperature). The maxium allowable powerdissipation at any temperature is Pdmax = (Tjmax - TA) /ThetaJA or the number givenin the Absolute Maximum Ratings, whichever is lower.Note 3:Human body model, 1.5K Ohms in series with 100pF.MNLM136-2.5-X REV 0A0MICROCIRCUIT DATA SHEETElectrical CharacteristicsDC PARAMETERS(The following conditions apply to all the following parameters, unless otherwise specified.)DC:Iz = 1mASYMBOL PARAMETER CONDITIONS NOTES PIN-NAME MIN MAX UNITSUB-GROUPSIadj Adjust Current Vadj = 0.7V-125+125uA1, 2,3Delta Vz Delta ZenerVoltage 0.4mA < Iz < 10 mA6mV110mV2, 3Vz Zener Voltage Vadj = Open 2.44 2.54V12.42 2.56V2, 3Vadj = 0.7V 2.39 2.49V12.29 2.49V2, 3Vadj = 1.9V 2.49 2.69V1, 2,3Zrd Reverse Dyn. Imp.11Ohm1, 2,3 Vstab Temp Stability Vz = Adjusted to 2.490V218mV2, 3 Note 1:Parameter tested go-no-go only.Note 2:Tested on Auto Drift Oven.MICROCIRCUIT DATA SHEET MNLM136-2.5-X REV 0A0Graphics and DiagramsGRAPHICS#DESCRIPTION09988HRB4METAL CAN, TO-46, 3LD, .100 DIA P.C. (B/I CKT)H03HRE METAL CAN, TO-46, 3LD, .100 DIA P.C. (P/P DWG)P000372A METAL CAN, TO-46, 3LD, .100 DIA P.C. (PINOUT)See attached graphics following this page.NMICROCIRCUIT DATA SHEET MNLM136-2.5-X REV 0A0Revision HistoryRev ECN #Rel Date Originator Changes0A0M000360912/13/99Rose Malone Change/Archive MNLM136-2.5-X, Rev. 0BL. Full MDSRelease MNLM136-2.5-X, Rev. 0A0.。

LM系列集成电路功能

LM系列集成电路功能LM124LM224LM324LM2902 Low Power Quad Operational Amplifier 低电压双路运算放大器LM324 Low Power Quad Operational Amplifier 低电压双路运算放大器LM129 LM329 Precision Reference 精密电压基准芯片LM135 LM235 LM335精密温度传感器芯片LM1458 LM1558 Dual Operational Amplifier 双运算放大器LM158LM258LM358LM2904 Low Power Dual Operational Amplifier 低压双运算放大器LM18293 Four Channel Push-Pull Driver 四通道推拉驱动器LM1868 AM/FM Radio System 调幅/调频收音机芯片LM1951 Solid State 1 Amp Switch 1安培固态开关LM2574 Simple Switcher 0.5A Step-Down Voltage Regulator 0.5A降阶式电压调节器LM1575 LM2575 1A Step-Down Voltage Regulator 1A 降阶式电压调节器LM2576 3A Step-Down Voltage Regulator 3A 降阶式电压调节器LM1577 LM2577 Simple Switch Step-Down Voltage Regulator 降阶式电压调节器LM2587 Simple Switch 5A Flyback Regulator 5A 返馈开关式电压调节器LM1893 LM2893 Carrier Current Transceiver 载体电流收发器LM193LM293LM393LM2903 Low Power Low Offset Voltage Dual Comparator 双路低压低漂移比较器LM2907LM2917 Frequency to Voltage Converter 频率电压转换器LM101A LM201A LM301A Operational Amplifiers 运算放大器芯片LM3045 LM3046LM3086 Transistor Array 晶体管阵列LM111 LM211LM311 Voltage Comparator 电压比较器LM117 LM317 3-Terminal Adjustable Regulator 三端可调式稳压器LM118 LM218 LM318 Operational Amplifier 运算放大器LM133 LM333 3A Adjustable Negative Regulator 3安培可调负电压调节器LM137 LM337 3-Terminal Adjustable Negative Regulator 可调式三端负压稳压器LM34 Precision Fahrenheit Temperature Sensor 精密华氏温度传感器LM342 3-Terminal Positive Regulator 三端正压稳压器LM148 LM248 LM348 / LM149 LM349双LM741运算放大器LM35 Precision Centigrade Temperature Sensors 精密摄氏温度传感器LM158LM258LM358LM2904 Low Power Dual Operational Amplifiers 低压双运算放大器LM150 LM350 3A Adjustable Regulator 3安培可调式电压调节器LM380 2.5W Audio Amplifier 2.5瓦音频放大器LM386 Low Voltage Audio Power Amplifier 低压音频功率放大器LM3886 High-Performance 68W Audio Power Amplifier With Mute 高性能68瓦音频功率放大器/带静音LM555LM555C Timer Circuit 时基发生器电路LM556LM556C Timer Circuit 双时基发生器电路LM565 Phase Locked Loop 相位跟随器LM567 Tone Decoder 音频译码器LM621 BrushLess Motor Commutator 无刷电机换向器LM628 LM629 Precision Motion Controller 精密位移控制器LM675 Power Operational Amplifier 功率运算放大器LM723 Voltage Regulator 电压调节器LM741 Operational Amplifier 运算放大器LM7805 LM78xx 系列稳压器LM7812 LM78xx 系列稳压器LM7815 LM78xx 系列稳压器LM78L00 3-Terminal Positive Voltage Regulator 三端正压调节器LM78L05 3-Terminal Positive Voltage Regulator 三端正压调节器LM78L09 3-Terminal Positive Voltage Regulator 三端正压调节器LM78L12 3-Terminal Positive Voltage Regulator 三端正压调节器LM78L15 3-Terminal Positive Voltage Regulator 三端正压调节器LM78L62 3-Terminal Positive Voltage Regulator 三端正压调节器LM78L82 3-Terminal Positive Voltage Regulator 三端正压调节器LM340 LM78Mxx Series 3-Terminal Positive Regulator 三端正压稳压器LM7905 3-Terminal Nagative Voltage Regulator 三端负压调节器LM7912 3-Terminal Nagative Voltage Regulator 三端负压调节器LM7915 3-Terminal Nagative Voltage Regulator 三端负压调节器LM79Mxx 3-Terminal Nagative Voltage Regulator 三端负压调节器LF147 LF347 Wide Bandwidth Quad JFET input operational amplifier 宽带J型场效应输入运算放大器LF351 Wide Bandwidth Quad JFET input operational amplifier 宽带J型场效应输入运算放大器LF353 Wide Bandwidth Quad JFET input operational amplifier 宽带J型场效应输入运算放大器LF444 Quad Low Power JFET input operational amplifier 双低压J型场效应输入运算放大器。

V23815-U1306-M136资料

Parallel Optical Link:PAROLI ® Tx AC, 1.6 Gbit/s Parallel Optical Link:PAROLI ® Rx AC, 1.6 Gbit/sPreliminary PAROLI ® is a registered trademark of Infineon Technologies AGV23814-U1306-M136 V23815-U1306-M136Fiber OpticsFeatures •Power supply 3.3V•Multistandard differential signal electrical interface •12 electrical data channels•Asynchronous, AC-coupled optical link •12 optical data channels•Transmission data rate of up to 1600Mbit/s per channel, total link data rate up to 19Gbit/s •850nm VCSEL array technology •PIN diode array technology•62.5µm graded index multimode fiber ribbon •MT based optical port •SMD technology•IEC Class 1M laser safety compliant •GBE mask compliant modules availableOptical Port•Designed for the Simplex MT Connector (SMC)•Port outside dimensions: 15.4mm x 6.8mm (width x height)•MT compatible (IEC 61754-5) fiber spacing (250µm) and alignment pin spacing (4600µm)•Alignment pins fixed in module port •Integrated mechanical keying•Process plug (SMC dimensions) included with every moduleApplications Features of the Simplex MT Connector (SMC)(as part of optional PAROLI fiber optic cables)•Uses standardized MT ferrule (IEC 61754-5)•MT compatible fiber spacing (250µm) and alignment pin spacing (4600µm)•Snap-in mechanism•Ferrule bearing spring loaded•Integrated mechanical keyingApplicationsTelecommunication•Switching equipment•Access networkData Communication•Interframe (rack-to-rack)•Intraframe (board-to-board)•On board (optical backplane)Pin ConfigurationThe numbering conventions for the Tx and Rx modules are the same. Numbering Conventions T ransmitte r/ReceiverFigure1Pin Description TransmitterPinSymbol Level/Logic DescriptionNo.1V CC Power supply voltage of laser driver2t.b.l.o.to be left open3t.b.l.o.to be left open4t.b.l.o.to be left open5t.b.l.o.to be left open6LCU LVCMOS Out Laser Controller Up.High = normal operation.Low = laser fault or –RESET low.7V EE Ground8V IN Input V IN rail.CML: V IN = Reference supply (e.g. V CC).LVPECL, LVDS: V IN = V EE.9t.b.l.o.to be left open10t.b.l.o.to be left open11V EE Ground12V EE Ground13DI01N Data In Data Input #1, inverted 14DI01PData InData Input #1, non-inverted 15V EE Ground 16V EEGround17DI02N Data In Data Input #2, inverted 18DI02PData InData Input #2, non-inverted 19V EE Ground 20V EEGround21DI03N Data In Data Input #3, inverted 22DI03PData InData Input #3, non-inverted 23V EE Ground 24V EEGround 25t.b.l.o.to be left open26DI04N Data In Data Input #4, inverted 27DI04PData In Data Input #4, non-inverted 28V EEGround29DI05N Data In Data Input #5, inverted 30DI05PData InData Input #5, non-inverted 31V EE Ground 32V EEGround33DI06N Data In Data Input #6, inverted 34DI06PData InData Input #6, non-inverted 35V EE Ground 36V EEGround37DI07N Data In Data Input #7, inverted 38DI07PData InData Input #7, non-inverted 39V EE Ground 40V EEGround41DI08N Data In Data Input #8, inverted 42DI08PData InData Input #8, non-invertedPin Description Transmitter (cont ’d)Pin No.Symbol Level/Logic Description43V EE Ground 44V EE Ground 45V EEGround46DI09N Data In Data Input #9, inverted 47DI09P Data InData Input #9, non-inverted 48t.b.l.o.to be left open 49V EE Ground 50V EEGround51DI10N Data In Data Input #10, inverted 52DI10PData InData Input #10, non-inverted 53V EE Ground 54V EEGround55DI11N Data In Data Input #11, inverted 56DI11PData InData Input #11, non-inverted 57V EE Ground 58V EEGround59DI12N Data In Data Input #12, inverted 60DI12PData InData Input #12, non-inverted 61V EE Ground62V INInput V IN rail.CML: V IN = Reference supply (e.g. V CC ).LVPECL, LVDS: V IN = V EE .63t.b.l.o.to be left open64–RESET LVCMOS InHigh = laser diode array is active.Low = switches laser diode array off.This input has an internal pull-down to ensure laser safety switch off in case of unconnected –RESET input.65V EE Ground 66V EEGroundPin Description Transmitter (cont ’d)Pin No.SymbolLevel/LogicDescription67LELVCMOS InLaser ENABLE. High active.High = laser array is on if –LE is also active.Low = laser array is off. This input has an internal pull-up, therefore can be left open.68–LELaser ENABLE. Low active.Low = laser array is on if LE is also active. This input has an internal pull-down, therefore can be left open.69t.b.l.o.to be left open 70t.b.l.o.to be left open 71t.b.l.o.to be left open72V CCPower supply voltage of laser driverPin Description Transmitter (cont ’d)Pin No.Symbol Level/Logic DescriptionPin Description ReceiverSymbol Level/Logic DescriptionPinNo.1V EE Ground2V CC Power supply voltage of preamplifier and analogcircuitry3V CC Power supply voltage of preamplifier and analogcircuitry4t.b.l.o.to be left open5OEN LVCMOS In Output Enable.High = normal operation.Low = sets all Data Outputs to low.This input has an internal pull-up which pulls to highlevel when this input is left open.6SD1LVCMOS Out Signal Detect on fiber #1.High = signal of sufficient AC power is present onfiber #1.Low = signal on fiber #1 is insufficient.7V CCO Power supply voltage of output stages8V EE Ground9t.b.l.o.to be left open10V EE Ground11V EE Ground12V EE Ground13DO01P LVDS Out Data Output #1, non-inverted14DO01N LVDS Out Data Output #1, inverted15V EE Ground16V EE Ground17DO02P LVDS Out Data Output #2, non-inverted18DO02N LVDS Out Data Output #2, inverted19V EE Ground20V EE Ground21DO03P LVDS Out Data Output #3, non-inverted22DO03N LVDS Out Data Output #3, inverted23V EE Ground24V EEGround 25t.b.l.o.to be left open26DO04P LVDS Out Data Output #4, non-inverted 27DO04NLVDS Out Data Output #4, inverted 28V EEGround29DO05P LVDS Out Data Output #5, non-inverted 30DO05NLVDS OutData Output #5, inverted 31V EE Ground 32V EEGround33DO06P LVDS Out Data Output #6, non-inverted 34DO06NLVDS OutData Output #6, inverted 35V EE Ground 36V EEGround37DO07P LVDS Out Data Output #7, non-inverted 38DO07NLVDS OutData Output #7, inverted 39V EE Ground 40V EEGround41DO08P LVDS Out Data Output #8, non-inverted 42DO08NLVDS OutData Output #8, inverted 43V EE Ground 44V EE Ground 45V EEGround46DO09P LVDS Out Data Output #9, non-inverted 47DO09N LVDS OutData Output #9, inverted 48t.b.l.o.to be left open 49V EE Ground 50V EEGround51DO10P LVDS Out Data Output #10, non-inverted 52DO10NLVDS OutData Output #10, inverted 53V EEGroundPin Description Receiver (cont ’d)Pin No.SymbolLevel/LogicDescription54V EEGround55DO11P LVDS Out Data Output #11, non-inverted 56DO11NLVDS OutData Output #11, inverted 57V EE Ground 58V EEGround59DO12P LVDS Out Data Output #12, non-inverted 60DO12NLVDS OutData Output #12, inverted 61V EE Ground 62V EE Ground 63V EEGround 64t.b.l.o.to be left open 65V EE Ground66V CCOPower supply voltage of output stages67–SD12LVCMOS Out low active Signal Detect on fiber #12.Low = signal of sufficient AC power is present onfiber #12.High = signal on fiber #12 is insufficient. 68ENSDLVCMOS InEnable Signal Detect.High = SD1 and SD12 function enabled.Low = SD1 and SD12 are set to permanent active. This input has an internal pull-up which pulls to high level when this input is left open.69t.b.l.o.to be left open70V CC Power supply voltage of preamplifier and analog circuitry71V CC Power supply voltage of preamplifier and analog circuitry 72V EEGroundPin Description Receiver (cont ’d)Pin No.SymbolLevel/LogicDescriptionDescriptionDescriptionPAROLI is a parallel optical link for high-speed data transmission. A complete PAROLI system consists of a transmitter module, a 12-channel fiber optic cable, and a receiver module. The transmitter supports LVDS, CML and LVPECL differential signals. The receiver module is described for the LVDS electrical output only. A specification for Infineon’s adjustable CML output can be provided separately.Transmitter V23814-U1306-M136The transmitter module converts parallel electrical input signals via a laser driver and a Vertical Cavity Surface Emitting Laser (VCSEL) diode array into parallel optical output signals. All input data signals are Multistandard Differential Signals (LVDS compatible; they also support LVPECL and CML because of the wide common input range). The electrical interface (LVDS, LVPECL or CML) is selected by the supply inputs V IN. The data rate is up to 1600Mbit/s for each channel. The transmitter module’s min. data rate of 500 Mbit/s is specified for the CID1) worst case pattern (disparity72) or any pattern with a lower disparity.A logic low level at –RESET switches all laser outputs off. During power-up –RESET must be used as a power-on reset which disables the laser driver and laser control until the power supply has reached a 3.135V level.The Laser Controller Up (LCU) output is low if a laser fault is detected or –RESET is forced to low.All non data signals have LVCMOS levels.Transmission delay of the PAROLI system is 1ns for the transmitter, 1ns for the receiver and approximately 5ns per meter for the fiber optic cable.Figure2Transmitter Block Diagram1)Consecutive Identical Digit (CID) immunity test pattern for STM-N signals,ITU-T recommendation G.957 sec. II.DescriptionReceiver V23815-U1306-M136The PAROLI receiver module converts parallel optical input signals into parallel electrical output signals. The optical signals received are converted into voltage signals by PIN diodes, transimpedance amplifiers, and gain amplifiers. There are two different modules available for LVDS and Infineon’s adjustable CML output. This description only refers to a module with LVDS output. A module description for CML output can be provided separately.The data rate is up to 1600Mbit/s for each channel. The receiver module’s min. data rate of 500Mbit/s is specified for the CID1) worst case pattern (disparity 72) or any pattern with a lower disparity.Additional Signal Detect outputs (SD1 active high / SD12 active low) show whether an optical AC input signal is present at data input 1 and/or 12. The signal detect circuit can be disabled with a logic low at ENSD. The disabled signal detect circuit will permanently generate an active level at Signal Detect outputs, even if there is insufficient signal input. This could be used for test purposes.A logic low at LVDS Output Enable (OEN) sets all data outputs to logic low. SD outputs will not be effected.All non data signals have LVCMOS levels. Transmission delay of the PAROLI system is at a maximum 1ns for the transmitter, 1ns for the receiver and approximately 5ns per meter for the fiber optic cable.Figure3Receiver Block Diagram1)Consecutive Identical Digit (CID) immunity test pattern for STM-N signals,ITU-T recommendation G.957 sec. II.Laser SafetyLaser SafetyThe transmitter of the AC coupled Parallel Optical Link (PAROLI) is an IEC 60825-1Amend. 2 Class 1M laser product. It complies with FDA performance standards (21 CFR 1040.10 and 1040.11) for laser products except for deviations pursuant to Laser Notice No. 50, dated July 26, 2001. To avoid possible exposure to hazardous levels of invisible laser radiation, do not exceed maximum ratings.The PAROLI module must be operated under the specified operating conditions (the supply voltage range can be adjusted between 3.0V and 3.6V) under any circumstances to ensure laser safety.Class 1M Laser ProductAttention:Invisible laser radiation. Do not view directly with optical instruments.Note:Any modification of the module will be considered an act of “manufacturing”, and willrequire, under law, recertification of the product under FDA (21 CFR 1040.10 (i)).Figure 4Laser EmissionLaser Safety Design ConsiderationsTo ensure laser safety for all input data patterns each channel is controlled internally and will be switched off if the laser safety limits are exceeded.A channel alerter switches the respective data channel output off if the input duty cycle permanently exceeds 57%. The alerter will not disable the channel below an input duty cycle of 57% under all circumstances.The minimum alerter response time is 1 µs with a constant high input, i.e. in the input pattern the time interval of excessive high input (e.g. ’1’s in excess of a 57% duty cycle,consecutive or non-consecutive) must not exceed 1 µs, otherwise the respective channel will be switched off. The alerter switches the respective channel from off to on without the need of resetting the module if the input duty cycle is no longer violated.All of the channel alerters operate independently, i.e. an alert within a channel does not affect the other channels. To decrease the power consumption of the module unused channel inputs can be tied to high input level. In this way a portion of the supply current in this channel is triggered to shut down by the corresponding alerter.Technical DataStress beyond the values stated below may cause permanent damage to the device.Exposure to absolute maximum rating conditions for extended periods of time may affect device reliability.Absolute Maximum Ratings Parameter Symbol Limit Values Unit min.max.Supply VoltageV CC –V EE –0.3 4.5V Data/Control Input Levels 1)1)At Data and LVCMOS inputs.V IN –0.5V CC +0.5V Data Input Differential Voltage 2)2)|V ID | = |(input voltage of non-inverted input minus input voltage of inverted input)|.|V ID | 2.0V Operating Case Temperature 3)3)Measured at case temperature reference point (see Package Outlines Figure 15).T CASE 080°C Storage Ambient Temperature T STG–20100°C Operating Moisture 2085%Storage Moisture2085%ESD Resistance(all pins to V EE , human body model)4)4)To avoid electrostatic damage, handling cautions similar to those used for MOS devices must be observed.1kVRecommended Operating ConditionsParameter Symbol Limit Values Unitmin.max. TransmitterPower Supply Voltage V CC 3.135 3.6V Noise on Power Supply1)N PS150mV Noise on Power Supply2)N PS2100mV Data Input Voltage Range3), 4)V DATAI500V CC mV Data Input Differential Voltage4), 5)|V ID|801000mV Data Input Skew6)t SPN0.5 x t R, t F ps Data Input Rise/Fall Time7)t R, t F50300ps LVCMOS Input High Voltage V LVCMOSIH 2.0V CC V LVCMOS Input Low Voltage V LVCMOSIL V EE0.8V LVCMOS Input Rise/Fall Time8)t R, t F20ns ReceiverPower Supply Voltage V CC 3.0 3.6V Noise on Power Supply1)N PS150mV Noise on Power Supply2)N PS2100mVDifferential LVDS Termination Impedance Rt80120WLVCMOS Input High Voltage V LVCMOSIH 2.0V CC V LVCMOS Input Low Voltage V LVCMOSIL V EE0.8V LVCMOS Input Rise/Fall Time8)t R, t F20ns Optical Input Rise/Fall Time9)t R, t F320ps Input Extinction Ratio ER 6.0dB Input Center Wavelength lC830860nm Voltages refer to V EE = 0 V.1)Noise frequency is 1 kHz to 10 MHz. Voltage is peak-to-peak value.2)Noise frequency is > 10 MHz. Voltage is peak-to-peak value.3)This implies that the input stage can be AC coupled.4)Input level diagram: see Figure5.5)|V ID| = |(input voltage of non-inverted input minus input voltage of inverted input)|.6)Skew between positive and negative inputs measured at 50% level.7)20% - 80% level.8)Measured between 0.8 V and 2.0 V.9)20% - 80% level. Non filtered values.Figure5Input Level DiagramFigure6Input StageThe electro-optical characteristics described in the following tables are valid only for use under the recommended operating conditions.Transmitter Electrical Characteristics Parameter SymbolLimit Values Unit min.typ.max.Supply Current I CC 350450mA Power Consumption P1.21.6W Data Rate per Channel DR5001)1)Specified for CID worst case pattern (disparity 72) or any pattern with a smaller disparity.1600Mbit/s LVCMOS Output Voltage Low V LVCMOSOL0.4V LVCMOS Output Voltage High V LVCMOSOH 2.5V LVCMOS Input Current High/LowI LVCMOSI –500500µA LVCMOS Output Current High 2)2)Source current.I LVCMOSOH0.5mA LVCMOS Output Current Low 3)3)Sink current.I LVCMOSOL 4.0mAData Differential Input Impedance 4)4)Data input stage.R IN 80120W Data Input Differential Current|I I |5.5mATransmitter Electro-Optical CharacteristicsParameter Symbol Limit Values Unitmin.typ.max.Optical Rise Time1)t R200ps Optical Fall Time1)t F200ps Total Jitter2)J T0.284UI Deterministic Jitter J D0.1UI Channel-to-channel skew3)t CSK100ps Launched Average Power P AVG–9.0–5.0–3.0dBm Launched Power Shutdown P SD–30.0dBm Center Wavelength l C830860nm Spectral Width (FWHM)Dl2nm Spectral Width (rms)Dl0.85nm Relative Intensity Noise RIN–117 dB/Hz Extinction Ratio (dynamic)ER 6.0dB Optical Modulation Amplitude4)OMA0.155)0.466)mW Eye mask compliance to be defined7)Optical parameters valid for each channel.1)20% - 80% level, non filtered values.2)Measured using a filter as defined in IEEE 802.3 (2000-edition) Gigabit Ethernet specification, section 38.6.5.3)With input channel-to-channel skew 0ps and a maximum data channel-to-channel average deviation andswing deviation of 5%.4)Peak to peak values.5)Corresponds to a minimum extinction ratio of 6dB.6)Corresponds to a typical extinction ratio of 8dB.7)GBE mask (IEEE 802.3, sec. 38.6.5.) adopted for data rate available.Figure 7Timing DiagramParameterSymbol Limit Values Unit min.max.–RESET on Delay Time t 1100ms –RESET off Delay Time t 250µs –RESET Low Duration 1)1)Only when not used as power on reset. At any failure recovery, –RESET must be brought to low level for at least t 3.t 310µsReceiver Electrical Characteristics Parameter SymbolLimit Values Unitmin.typ.max.Supply Current I CC 250350mA Power Consumption P 0.81.3W LVDS Output Low Voltage 1), 2)V LVDSOL 925mV LVDS Output High Voltage 1), 2)V LVDSOH 1475mV LVDS Output Differential Voltage 1), 2), 3)|V OD |250400mV LVDS Output Offset Voltage 1), 2), 4)V OS11251275mVLVDS Rise/Fall Time 5)t R , t F400ps LVCMOS Output Voltage Low V LVCMOSOL400mV LVCMOS Output Voltage HighV LVCMOSOH 2500mVFigure 8Output Level Diagram.LVCMOS Input Current High/Low I LVCMOSI –500500µA LVCMOS Output Current High 6)I LVCMOSOH 0.5mA LVCMOS Output Current Low 7)I LVCMOSOL4.0mA Total Jitter 8), 9)J T 0.39UI Deterministic Jitter 8)J D 0.12UI Channel-to-channel skew 10)t CSK100ps1)Output level diagram: see Figure 8.2)LVDS output must be terminated differentially with R t .3)|V OD | = |(output voltage of non-inverted output minus output voltage of inverted output)|.4)V OS = 1/2 (output voltage of inverted output + output voltage of non-inverted output).5)Measured between 20% and 80% level with a maximum capacitive load of 5pF.6)Source current.7)Sink current.8)With no optical input jitter.9)At sensitivity limit of 0.032 mW OMA.10)With input channel-to-channel skew 0ps.Receiver Electrical Characteristics (cont ’d)ParameterSymbolLimit Values Unit min.typ.max.Receiver Electro-Optical CharacteristicsParameter Symbol Limit Values Unitmin.max.Data Rate per Channel DR5001)1600Mbit/s Sensitivity (Average Power)2)P IN–18.0dBm Optical Modulation Amplitude3)OMA0.0324)mW Saturation (Average Power)P SAT–3.0dBm Signal Detect Assert Level5)P SDA–19.0dBm Signal Detect Deassert Level5)P SDD–29.0dBm Signal Detect Hysteresis5)P SDA–P SDD1.0 4.0dB Return Loss of Receiver A RL12dB Optical parameters valid for each channel.1)Specified for CID worst case pattern (disparity 72) or any pattern with a smaller disparity.2)BER = 10–12, Extinction ratio = infinite, Specified for CID worst case pattern (disparity 72) or any pattern with asmaller disparity.3)Peak to peak value.4)Corresponds to a maximum sensitivity (average power) of –18.0 dBm at an infinite extinction ratio.5)Extinction ratio = infinite,P SDA : Average optical power when SD switches from inactive to active.PSDD: Average optical power when SD switches from active to inactive.Technical DataFigure 9Timing DiagramsParameterSymbol Max.Unit Signal Detect Deassert Time t 110µs Signal Detect Assert Timet 210µs LVDS Output Enable off Delay Time t 320ns LVDS Output Enable on Delay Timet 420nsAssemblyOn the next pages are some figures to assist the customer in designing his printed circuit board (PCB). Figure10 shows the mechanical dimensions of the PAROLI transmitter and receiver modules and Figure11 to Figure13 give the dimensions of the holes and solder pads on a customer PCB that are necessary to mount the modules on this PCB. Keeping the tolerances for the PCB given in Figure11 to Figure13 is required to properly attach the PAROLI transmitter and receiver module to the PCB.Attachment to the customer PCB should be done with four M2 screws torqued to 0.25Nm+0.05Nm (see Figure10, cross section B-B). The screw length a should be 3 to 4mm plus the thickness b of the customer PCB.Special care must be taken to remove residues from the soldering and washing process which can impact the mechanical function. Avoid the use of aggressive organic solvents like ketones, ethers, etc. Consult the supplier of the PAROLI modules and the supplier of the solder paste and flux for recommended cleaning solvents.The following common cleaning solvents will not affect the module: deionized water, ethanol, and isopropyl alcohol. Air-drying is recommended to a maximum temperature of 150°C. Do not use ultrasonics.During soldering, heat must be applied to the leads only, to ensure that the case temperature never exceeds 150°C. The module must be mounted with a hot-air or hot-bar soldering process using a SnPb solder type, e.g. Sn62Pb36Ag2, in accordance with ISO 9435.Figure 10Drawing of the PAROLI Transmitter and Receiver ModuleFigure 11Recommended Circuit Board Layout: TransmitterFigure12Recommended Circuit Board Layout: ReceiverNo electronic components are allowed on the customer PCB within the area covered by the PAROLI module and the jumper used to attach a ribbon fiber cable.Figure 13Mounting Hole, Detail Y (see Figure 11 and Figure 12)Figure14ApplicationsPackage OutlinesPackage OutlinesFigure15Edition 2002-05-14Published by Infineon Technologies AG,St.-Martin-Strasse 53,D-81541 M ünchen, Germany© Infineon Technologies AG 2002.All Rights Reserved.Attention please!The information herein is given to describe certain components and shall not be considered as warranted characteristics.Terms of delivery and rights to technical change reserved.We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein.Infineon Technologies is an approved CECC rmationFor further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Representatives worldwide.WarningsDue to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office.Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life-support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.For questions on technology, delivery and prices please contact the Infineon Technologies Offices in Germany or the Infineon Technologies Companies and Representatives worldwide: see our webpage at .V23814-U1306-M136V23815-U1306-M136Revision History:2002-05-14DS1Previous Version:2001-12-01Page Subjects (major changes since last revision)12Class 1 Laser Product changed to Class 1M Laser Product;Caution: ... added。

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3

元器件交易网
Typical Performance Characteristics
Reverse Voltage Change
Zener Noise Voltage
Dynamic Impedance
Response Time
DS005715-21
DS005715-10
DS005715-11

2
元器件交易网
Absolute Maximum Ratings (Note 1)
If Military/Aerospace specified devices are required, please contact the National Semiconductor Sales Office/ Distributors for availability and specifications.
or LM336BM-2.5 See NS Package Number M08A
2.5V Reference with Minimum Temperature Coefficient
Wide Input Range Reference
DS005715-9
†Adjust to 2.490V *Any silicon signal diode
LM136-2.5/LM236-2.5/LM336-2.5V Reference Diode
元器件交易网
May 1998
LM136-2.5/LM236-2.5/LM336-2.5V Reference Diode
General Description
The LM136-2.5/LM236-2.5 and LM336-2.5 integrated circuits are precision 2.5V shunt regulator diodes. These monolithic IC voltage references operate as a low-temperature-coefficient 2.5V zener with 0.2Ω dynamic impedance. A third terminal on the LM136-2.5 allows the reference voltage and temperature coefficient to be trimmed easily.
Parameter
Conditions
Reverse Breakdown Voltage
Reverse Breakdown Change With Current Reverse Dynamic Impedance Temperature Stability (Note 4)
Reverse Breakdown Change With Current Reverse Dynamic Impedance Long Term Stability
Note 2: For elevated temperature operation, Tj max is:
LM136 LM236 LM336
150˚C 125˚C 100˚C
Thermal Resistance θja (Junction to Ambient)
θja (Junction to Case)
LM136-2.5/LM236-2.5
Min
Typ Max
LM336B-2.5 LM336-2.5 Min Typ Max
Units
2.440 2.465
2.490 2.540 2.390 2.490 2.590 V
2.490 2.515 2.440 2.490 2.540 V
2.6
6
2.6 10 mV
DS005715-20
Bottom View Order Number LM136H-2.5, LM136H-2.5/883, LM236H-2.5, LM136AH-2.5, LM136AH-2.5/883
or LM236AH-2.5 See NS Package Number H03H
© 1999 National Semiconductor Corporation DS005715
TO-92 180˚C/W (0.4" leads) 170˚C/W (0.125" lead)
n/a
TO-46 SO-8 440˚C/W 165˚C/W
80˚C/W
n/a
Note 3: Unless otherwise specified, the LM136-2.5 is specified from −55˚C ≤ TA ≤ +125˚C, the LM236-2.5 from −25˚C ≤ TA ≤ +85˚C and the LM336-2.5 from 0˚C ≤ TA ≤ +70˚C.
Note 4: Temperature stability for the LM336 and LM236 family is guaranteed by design. Design limits are guaranteed (but not 100% production tested) over the indicated temperature and supply voltage ranges. These limits are not used to calculate outgoing quality levels. Stability is defined as the maximum change in Vref from 25˚C to TA (min) or TA (max).
Application Hints
The LM136 series voltage references are much easier to use than ordinary zener diodes. Their low impedance and wide operating current range simplify biasing in almost any circuit. Further, either the breakdown voltage or the temperature coefficient can be adjusted to optimize circuit performance.
Features
n Low temperature coefficient n Wide operating current of 400 µA to 10 mA n 0.2Ω dynamic impedance n ±1% initial tolerance available n Guaranteed temperature stability n Easily trimmed for minimum temperature drift n Fast turn-on n Three lead transistor package
(LM236H, LM236Z) −25˚C ≤ TA ≤ +85˚C (LM236M) −55˚C≤TA≤+125˚C (LM136) 400 µA≤IR≤10 mA
IR=1 mA TA=25˚C ±0.1˚C, IR=1 mA, t = 1000 hrs
LM136A-2.5/LM236A-2.5

元器件交易网
Connection Diagrams (Continued)
SO Package
Typical Appl12
Top View Order Number LM236M-2.5, LM236AM-2.5, LM336M-2.5
LM336
0˚C to +70˚C
Soldering Information
TO-92 Package (10 sec.)
260˚C
TO-46 Package (10 sec.)
300˚C
SO Package
Vapor Phase (60 sec.)
215˚C
Infrared (15 sec.)
220˚C
TA=25˚C, IR=1 mA LM136, LM236, LM336 LM136A, LM236A, LM336B TA=25˚C, 400 µA≤IR≤10 mA TA=25˚C, IR=1 mA, f = 100 Hz VR Adjusted to 2.490V IR=1 mA, Figure 2 0˚C≤TA≤70˚C (LM336) −25˚C≤TA≤+85˚C
Connection Diagrams
TO-92 Plastic Package
TO-46 Metal Can Package
DS005715-8
Bottom View Order Number LM236Z-2.5, LM236AZ-2.5, LM336Z-2.5 or LM336BZ-2.5 See NS Package Number Z03A
See AN-450 “Surface Mounting Methods and Their Effect on Product Reliability” (Appendix D) for other methods of soldering surface mount devices.
Electrical Characteristics (Note 3)
The LM136-2.5 series is useful as a precision 2.5V low voltage reference for digital voltmeters, power supplies or op amp circuitry. The 2.5V make it convenient to obtain a stable reference from 5V logic supplies. Further, since the LM136-2.5 operates as a shunt regulator, it can be used as either a positive or negative voltage reference.