BAT54T-7-F中文资料
BAT54系列PDF资料
DATA SHEETProduct specificationSupersedes data of 2001Oct 122002Mar 04DISCRETE SEMICONDUCTORSBAT54 seriesSchottky barrier (double) diodes ook, halfpageM3D088Schottky barrier (double) diodes BAT54 seriesFEATURES•Low forward voltage•Guard ring protected•Small plastic SMD package.APPLICATIONS•Ultra high-speed switching•Voltage clamping•Protection circuits•Blocking diodes.DESCRIPTIONPlanar Schottky barrier diodes encapsulated in a SOT23 small plastic SMD package. Single diodes and double diodes with different pinning are available.MARKINGNote1.∗=p:Made in Hong Kong.∗=t:Made in Malaysia.∗=W: Made in China.PINNINGTYPE NUMBER MARKING CODE(1) BA T54L4∗BA T54A L42 or∗V3BA T54C L43 or∗W1BA T54S L44 or∗V4PINDESCRIPTIONBAT54BAT54A BAT54C BAT54S 1a k1a1a12n.c.k2a2k23k a1,a2k1,k2k1,a2 handbook, 2 columns213MGC421Top viewFig.1Simplified outline (SOT23) and pinconfiguration.312MLC360312MLC359312MLC358 Fig.2 Diode configuration and symbol.312n.c.MLC357(1)BAT54(2)BAT54A(3)BAT54C(4)BAT54SSchottky barrier (double) diodesBA T54 series LIMITING VALUESIn accordance with the Absolute Maximum Rating System (IEC 60134).THERMAL CHARACTERISTICSNote1.Refer to SOT23 standard mounting conditions.CHARACTERISTICST amb =25°C unless otherwise specified.SYMBOLPARAMETER CONDITIONS MIN.MAX.UNIT Per diodeV Rcontinuous reverse voltage −30V I Fcontinuous forward current −200mA I FRMrepetitive peak forward current t p ≤1s;δ≤0.5−300mA I FSMnon-repetitive peak forward current t p <10ms −600mA T stgstorage temperature −65+150°C T jjunction temperature −125°C Per deviceP tot total power dissipation T amb ≤25°C −230mW SYMBOLPARAMETER CONDITIONS VALUE UNIT R th j-athermal resistance from junction to ambient note 1500K/W SYMBOLPARAMETER CONDITIONS MAX.UNIT Per diodeV F forward voltage see Fig.3I F =0.1mA240mV I F =1mA320mV I F =10mA400mV I F =30mA500mV I F =100mA800mV I Rreverse current V R =25V; see Fig.42µA t rr reverse recovery time when switched from I F =10mAto I R =10mA; R L =100Ω;measured at I R =1mA;see Fig.65ns C d diode capacitance f =1MHz; V R =1V; see Fig.510pFSchottky barrier (double) diodes BA T54 series handbook, halfpage10I FV F (V)310(mA)21011011.20.80.40MSA892(3)(2)(1)(3)(2)(1)(1)T amb =125°C.(2)T amb =85°C.(3)T amb =25°C.Fig.3Forward current as a function of forward voltage; typical values.0102030V (V)R 103I R (µA)102101101(1)(2)(3)MSA893(1)T amb =125°C.(2)T amb =85°C.(3)T amb =25°C.Fig.4Reverse current as a function of reverse voltage; typical values.handbook, halfpage 0102030051015V R (V)C d(pF)MSA891Fig.5Diode capacitance as a function of reversevoltage; typical values.f =1MHz; T amb =25°C.Fig.6 Reverse recovery definitions.handbook, halfpage 90%10%t f Q dI dttI FI R MRC129 - 1FrSchottky barrier (double) diodesBA T54 series PACKAGE OUTLINE UNITA 1max.b p c D E e 1H E L p Q w v REFERENCES OUTLINEVERSIONEUROPEAN PROJECTION ISSUE DATE 97-02-2899-09-13IEC JEDEC EIAJ mm 0.10.480.380.150.09 3.02.8 1.41.20.95e 1.9 2.52.10.550.450.10.2DIMENSIONS (mm are the original dimensions)0.450.15 SOT23TO-236AB b p D e 1e AA 1L p Qdetail X H E E w M v M AB A B 012 mmscale A 1.10.9cX123Plastic surface mounted package; 3 leads SOT23Schottky barrier (double) diodesBA T54 series DATA SHEET STATUSNotes1.Please consult the most recently issued data sheet before initiating or completing a design.2.The product status of the device(s) described in this data sheet may have changed since this data sheet waspublished. The latest information is available on the Internet at URL .DATA SHEET STATUS (1)PRODUCT STATUS (2)DEFINITIONS Objective data Development This data sheet contains data from the objective specification for productdevelopment. Philips Semiconductors reserves the right to change thespecification in any manner without notice.Preliminary data Qualification This data sheet contains data from the preliminary specification.Supplementary data will be published at a later date. PhilipsSemiconductors reserves the right to change the specification withoutnotice, in order to improve the design and supply the best possibleproduct.Product data ProductionThis data sheet contains data from the product specification. PhilipsSemiconductors reserves the right to make changes at any time in orderto improve the design, manufacturing and supply. Changes will becommunicated according to the Customer Product/Process ChangeNotification (CPCN) procedure SNW-SQ-650A.DEFINITIONSShort-form specification The data in a short-formspecification is extracted from a full data sheet with thesame type number and title. For detailed information seethe relevant data sheet or data handbook.Limiting values definition Limiting values given are inaccordance with the Absolute Maximum Rating System(IEC 60134). Stress above one or more of the limitingvalues may cause permanent damage to the device.These are stress ratings only and operation of the deviceat these or at any other conditions above those given in theCharacteristics sections of the specification is not implied.Exposure to limiting values for extended periods mayaffect device reliability.Application information Applications that aredescribed herein for any of these products are forillustrative purposes only. Philips Semiconductors makeno representation or warranty that such applications will besuitable for the specified use without further testing ormodification.DISCLAIMERS Life support applications These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury.Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application.Right to make changes Philips Semiconductors reserves the right to make changes,without notice,in the products, including circuits, standard cells, and/or software, described or contained herein in order to improve design and/or performance. Philips Semiconductors assumes no responsibility or liability for the use of any of these products,conveys no licence or title under any patent, copyright, or mask work right to these products,and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified.。
BAT54HT1G_NL中文资料
BAT54HT1GSmall Signal DiodeAbsolute Maximum Ratings *T A= 25°C unless otherwise noted* These ratings are limiting values above which the serviceability of the diode may be impaired.NOTES:1)These ratings are based on a maximum junction temperature of 150 degrees C.2)These are steady limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.Thermal CharacteristicsElectrical Characteristics T A=25°C unless otherwise notedSymbol ParameterValue Units V RRM Maximum Repetitive Reverse Voltage 30V I F(AV)Average Rectified Forward Current 200mA I FSM Non-repetitive Peak Forward Surge CurrentPulse Width = 1.0 second 600mA T STG Storage Temperature Range -65 to +150°C T JOperating Junction Temperature-55 to +150°CSymbol ParameterValue Units P D Power Dissipation200mW R θJAThermal Resistance, Junction to Ambient600°C/WSymbol ParameterTest Conditions Min.Max.Units V R Breakdown Voltage I R = 10µA 30V V FForward VoltageI F = 0.1mA I F = 1.0mA I F = 10mA I F = 30mA I F = 100mA 2403204005000.8mV mV mV mV V I R Reverse Leakage V R = 25V2.0µA C T Total Capacitance V R = 1V, f = 1.0MHz 10pF t rrReverse Recovery TimeI F = I R = 10mA, I RR = 1.0mA, R L = 100Ω5.0nsBAT54HT1GConnection Diagram2112A2SOD-323BAT54HT1GBAT54HT1GTRADEMARKSThe following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.DISCLAIMERFAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.LIFE SUPPORT POLICYFAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.As used herein:1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body,or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user.2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.PRODUCT STATUS DEFINITIONS Definition of TermsDatasheet Identification Product Status DefinitionAdvance InformationFormative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice.PreliminaryFirst ProductionThis datasheet contains preliminary data, andsupplementary data will be published at a later date.Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.No Identification Needed Full ProductionThis datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.Obsolete Not In ProductionThis datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor.The datasheet is printed for reference information only.FAST ®FASTr™FPS™FRFET™GlobalOptoisolator™GTO™HiSeC™I 2C™i-Lo ™ImpliedDisconnect™ISOPLANAR™LittleFET™MICROCOUPLER™MicroFET™MicroPak™MICROWIRE™MSX™MSXPro™OCX™OCXPro™OPTOLOGIC ®OPTOPLANAR™PACMAN™POP™Power247™PowerSaver™PowerTrench ®QFET ®QS™QT Optoelectronics™Quiet Series™RapidConfigure™RapidConnect™µSerDes™SILENT SWITCHER ®SMART START™SPM™Stealth™SuperFET™SuperSOT™-3SuperSOT™-6SuperSOT™-8SyncFET™TinyLogic ®TINYOPTO™TruTranslation™UHC™UltraFET ®VCX™A CEx™ActiveArray™Bottomless™CoolFET™CROSSVOLT ™DOME™EcoSPARK™E 2CMOS™EnSigna™FACT™FACT Quiet Series™Across the board. Around the world.™The Power Franchise ®Programmable Active Droop™。
BAT54S BAT54肖特基二极管参数
℃
TJ
Operating Junction Temperature工作结温
-55 to +150
℃
电气特性：
符号
Parameter参数
Conditions测试条件
最小
最大
单位
VR
Breakdown Voltage击穿电压
IR30-Fra bibliotekVVF
Forward Voltage正向电压
IF = 0.1mA
IF = IR = 10mA, IRR = 1.0mA,
RL = 100Ω
-
5.0
nS
BAT54封装外型及引脚图
BAT54
BAT54A
BAT54C
BAT54S
BAT54FILM
BAT54AFILM
BAT54CFILM
BAT54SFILM
BAT54S BAT54肖特基二极管参数
来源：|时间：2010年05月02日
三端贴片肖特基二极管BAT54/BAT54A/BAT54C/BAT54S
特点：
极小传导损耗
开关损耗可以忽略不计
低正向压降
表面贴装器件
肖特基势垒二极管封装采用SOT-23
绝对最大额定值：
Symbol符号
Parameter参数
Value数值
Unit单位
VRRM
Maximum Repetitive Reverse Voltage最大重复反向电压
30
V
IF(AV)
Average Rectified Forward Current平均正向电流整流
200
mA
IFSM
BAT54;BAT54_D87Z;BAT54A;BAT54C;BAT54S;中文规格书,Datasheet资料
intended to be an exhaustive list of all such trademarks.
2Cool¥ AccuPower¥ AX-CAP¥* BitSiC¥ Build it Now¥ CorePLUS¥ CorePOWER¥ CROSSVOLT¥ CTL¥ Current Transfer Logic¥ DEUXPEED® Dual Cool™ EcoSPARK® EfficientMax¥ ESBC¥
®*
The Power Franchise®
TinyBoost¥ TinyBuck¥ TinyCalc¥ TinyLogic® TINYOPTO¥ TinyPower¥ TinyPWM¥ TinyWire¥ TranSiC¥ TriFault Detect¥ TRUECURRENT®* PSerDes¥
2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.
UHC® Ultra FRFET¥ UniFET¥ VCX¥ VisualMax¥ VoltagePlus¥ XS™
FPS¥ ®
* Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
DLPT05-7-F数据线保护设备产品说明书
DLPT05-7-FFeatures• 300W Peak Pulse Power (tp = 8×20µs)• Transient Protection for Data Line to IEC61000-4-2 Level 4 (ESD), 8kV HBMContact: Discharge – ±30kV Air: Discharge – ±30kV • IEC 61000-4-4 (EFT) • Low Leakage Current• Surface Mount Package Ideally Suited for Automated Insertion • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen and Antimony Free. “Green” Device (Note 3)Mechanical Data• Case: SOT-23• Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0• Moisture Sensitivity: Level 1 per J-STD-020D• Terminals: Solderable per MIL-STD-202, Method 208• Lead Free Plating (Matte Tin Finish annealed over Alloy 42 Leadframe).• Terminal Connections: See Diagram • Marking Information: See Page 1 • Ordering Information: See Page 1 •Weight: 0.008 grams (Approximate)Ordering Information (Note 4)Part Number Case Packaging DLPT05-7-FSOT23 3000/Tape & ReelNotes:1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant2. See https:///quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds4. For packaging details, go to our website at /datasheets/ap02007.pdf.Marking InformationDate Code KeyYear 1998 1999 2000 2001 … 2019 2020 2021 2022 Code J K L M … GH IJMonth Jan Feb Mar Apr May JunJul Aug Sep Oct Nov Dec Code123456789O NDNotes:5. Product manufactured with Data Code V9 (week 33, 2008) and newer are built with Green Molding Compound. Product manufactured prior to Date Code V9 are built with Non-Green Molding Compound and may contain Halogens or Sb 2O 3 Fire Retardants.Top ViewDevice SchematicCCBE PROTECTEDA01 = Product Type Marking Code YM = Date Code Marking Y = Year (ex: G = 2019)M = Month (ex: 9 = September)A01Y MMaximum Ratings @T A = 25°C unless otherwise specifiedThermal CharacteristicsElectrical Characteristics @T A = 25°C unless otherwise specifiedReverse Standoff Voltage Breakdown VoltageV BR @ I TTestCurrentMax. ReverseLeakage @ V RWM(Note 9)Max. ClampingVoltage @ I pp = 1A(Note 8)Typical PeakPulse Current(Note 7)Typical TotalCapacitance(Note 6)V RWM (V) Min (V)Max (V) I T (mA) I R (µA) V C (V) (A) (pF)5 6.0 1.0 20 9.8 17 1.9 Notes: 6. V R = 0V, f = 1MHz from line to be protected to ground pin.7. tp = 8×20µs.8. Clamping voltage value is based on an 8×20µs peak pulse current (I pp) waveform.9. Short duration pulse test used to minimize self-heating effect.10. Device mounted on FR-4 PCB pad layout (2oz copper) as shown on Diodes, Inc. suggested pad layout AP02001, which can be found on our website at.255075100125150175200T , AMBIENT TEMPERATURE (C)A °P E A K P U L S E D E R A T I N G I N % O F P E A K P O W E R O R C U R R E N TI , P E A K P U L S E C U R R E N T (%I )t, TIME (µs)Figure 2. Pulse WaveformC , T O T A L C A P A C I T A N C E (p F )T V REVERSE VOLTAGE (V)Fig. 3 Typical T otal Capacitance vs. Reverse Voltage R,P , P E A K P U L S E P O W E R (k W )D tp, PULSE WIDTH (µs)Fig. 4 Pulse Rating CurveNotes:11. Measured from line to be protected to ground pin.Typical Application SchematicsVccTransmission LineDriverRgFig. 1 Data Line T erminator VccFig. 2 Data Line ProtectionVccI/O Line 1I/O Line 2VccICPackage Outline DimensionsPlease see /package-outlines.html for the latest version.SOT23SOT23Dim Min Max Typ A 0.37 0.51 0.40 B 1.20 1.40 1.30 C 2.30 2.50 2.40 D 0.89 1.030.915 F 0.45 0.60 0.535 G 1.78 2.05 1.83 H 2.80 3.00 2.90 J 0.013 0.10 0.05 K 0.890 1.00 0.975 K1 0.903 1.101.025 L 0.45 0.61 0.55 L1 0.25 0.55 0.40 M 0.085 0.150 0.110 a 0° 8° -- All Dimensions in mmSuggested Pad LayoutPlease see /package-outlines.html for the latest version.SOT23DLPT05-7-F。
TBAT54,LM(T肖特基二极管东芝最新资料
3
2016-05-12 Rev.1.0
TBAT54,TBAT54A,TBAT54C,TBAT54S
Package Dimensions
Unit: mm
Weight: 0.0125 g (typ.)
Package Name(s) TOSHIBA: 2-3AB1A Nickname: SOT23
©2016 Toshiba Corporation
TBAT54,TBAT54A,TBAT54C,TBAT54S
Schottky Barrier Diode Silicon Epitaxial
TBAT54,TBAT54A,TBAT54C,TBAT54S
1. Applications
• Ultra-High-Speed Switching
2. Packaging
5. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 )
Characteristics Peak reverse voltage Reverse voltage Average rectified current Peak forward current Non-repetitive peak forward surge current Power dissipation Junction temperature Storage temperature Symbol VRM VR IO IFM IFSM PD Tj Tstg (Note 3) (Note 3) (Note 1), (Note 3) (Note 2), (Note 3) Note Rating 35 30 200 300 1 320 150 -55 to 150 A mW mA Unit V
BAT54W,115;BAT54CW,115;BAT54SW,115;BAT54AW,115;中文规格书,Datasheet资料
DATA SHEETProduct specificationSupersedes data of October 19931996Mar 19BAT54W seriesSchottky barrier (double) diodesook, halfpageM3D088Schottky barrier (double) diodes BAT54W seriesFEATURES•Low forward voltage•Guard ring protected•Very small SMD package.APPLICATIONS•Ultra high-speed switching •Voltage clamping•Protection circuits•Blocking diodes.DESCRIPTIONPlanar Schottky barrier diodes encapsulated in a SOT323 very small plastic SMD package. Single diodes and double diodes with different pinning are available.PINNINGPINBAT54W AW CW SW1a k1a1a12n.c.k2a2k23k a1,a2k1,k2k1,a 2Fig.1Simplified outline(SOT323) and pinconfiguration.handbook, 2 columns312MBC870Top viewFig.2BAT54W single diodeconfiguration (symbol).312n.c.MLC357Fig.3BAT54AW diodeconfiguration (symbol).312MLC360Fig.4BAT54CW diodeconfiguration (symbol).312MLC359Fig.5BAT54SW diodeconfiguration (symbol).312MLC358MARKINGTYPE NUMBER MARKING CODEBAT54W L4 BAT54AW42 BAT54CW43 BAT54SW44Schottky barrier (double) diodesBAT54W seriesLIMITING VALUESIn accordance with the Absolute Maximum Rating System (IEC 134).ELECTRICAL CHARACTERISTICS T amb =25°C unless otherwise specified.Note1.Pulsed test: t p =300µs;δ=0.02.THERMAL CHARACTERISTICS Note1.Refer to SOT323 standard mounting conditions.SYMBOL PARAMETERCONDITIONSMIN.MAX.UNITPer diode V R continuous reverse voltage −30V I F continuous forward current −200mA I FRM repetitive peak forward current t p ≤1s;δ≤0.5−300mA I FSM non-repetitive peak forward current t p <10ms −600mA P tot total power dissipation (per package)T amb ≤25°C−200mW T stg storage temperature −65+150°C T j junction temperature−125°C T amboperating ambient temperature−65+125°CSYMBOL PARAMETERCONDITIONSMAX.UNITPer diode V Fforward voltagesee Fig.6I F =0.1mA 240mV I F =1mA 320mV I F =10mA 400mV I F =30mA 500mV I F =100mA800mV I R reverse current V R =25V; note 1; see Fig.72µA t rrreverse recovery timewhen switched from I F =10mA to I R =10mA; R L =100Ω; measured at I R =1mA: see Fig.95nsC d diode capacitance f =1MHz; V R =1V; see Fig.810pFSYMBOL PARAMETERCONDITIONSVALUE UNIT R th j-a thermal resistance from junction to ambientnote 1625K/WSchottky barrier (double) diodesBAT54W seriesGRAPHICAL DATAhandbook, halfpage10I F V F (V)310(mA)21011011.20.80.40MSA892(3)(2)(1)(3)(2)(1)(1)T amb =125°C.(2)T amb =85°C.(3)T amb =25°C.Fig.6Forward current as a function of forward voltage; typical values.0102030V (V)R103I R(µA)102101101(1)(2)(3)MSA893(1)T amb =125°C.(2)T amb =85°C.(3)T amb =25°C.Fig.7Reverse current as a function of reverse voltage; typical values.010203051015V (V)RC d (pF)MSA891Fig.8Diode capacitance as a function of reversevoltage; typical values.f =1MHz; T amb =25°C.Fig.9 Reverse recovery definitions.handbook, halfpage 90%10%t fQ dI dttIFI RMRC129 - 1F rSchottky barrier (double) diodesBAT54W seriesPACKAGE OUTLINEDEFINITIONS LIFE SUPPORT APPLICATIONSThese products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.Data sheet status Objective specification This data sheet contains target or goal specifications for product development.Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.Product specification This data sheet contains final product specifications.Limiting valuesLimiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability.Application informationWhere application information is given, it is advisory and does not form part of the specification.handbook, full pagewidth0.250.10B0.20.2AAM M 1230.651.32.21.80.400.30B1.351.152.22.0detail XX1.1max0.10.01.00.80.30.10.2MBC871Dimensions in mm.Fig.10 SOT323.分销商库存信息:NXPBAT54W,115BAT54CW,115BAT54SW,115 BAT54AW,115。
BAT54SW二极管原厂规格书
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BAT54W/AW/CW/SW
Forward Characteristics
200
100
T
=100℃
a
10
=25℃
T a
1
Reverse Characteristics
100
10
Ta=100℃
1
0.1
Ta=25℃
REVERSE CURRENT IR (uA)
FORWARD CURRENT IF (mA)
Reverse voltage Forward current Forward power dissipation Thermal Resistance Junction to Ambient Junction temperature Storage temperature
VR IF PD RθJA Tj Tstg
FEATURES Extremely fast switching speed Low forward voltage
SOT-323
Maximum Ratings and Electrical Characteristics, Single Diode @Ta=25℃
Parameter
Symbol
Limit
Min Typ 30
Unit V mA mW
℃/W ℃ ℃
Max
2 0.24 0.32 0.4 0.5
1 10
Unit V uA V V V V V pF
5
ns
BAT54S-V中文资料
BAT54-V/54A-V/54C-V/54S-VDocument Number 85508Rev. 1.7, 16-Oct-06Vishay Semiconductors1Small Signal Schottky Diodes, Single & DualFeatures•These diodes feature very low turn-on voltage and fast switching •These devices are protected by a PN junction guard ring against excessive volt-age, such as electrostatic discharges •Lead (Pb)-free component•Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/ECMechanical DataCase: SOT23 Plastic case Weight: approx. 8.8 mgPackaging Codes/Options:GS18/10 k per 13" reel (8 mm tape), 10 k/box GS08/3 k per 7" reel (8 mm tape), 15 k/boxParts TableAbsolute Maximum RatingsT amb = 25°C, unless otherwise specified1) Device on fiberglass substrate, see layout on next page.PartOrdering codeT ype MarkingRemarks BAT54-V BAT54-V -GS18 or BAT54-V -GS08L4Tape and Reel BAT54A-V BAT54A-V -GS18 or BAT54A-V -GS08L42Tape and Reel BAT54C-V BAT54C-V -GS18 or BAT54C-V -GS08L43Tape and Reel BAT54S-VBAT54S-V -GS18 or BAT54S-V -GS08L44Tape and ReelParameterT est condition Symbol V alue Unit Repetitive peak reverse voltage V RRM 30V Forward continuous current I F 2001)mA Repetitive peak forward current I FRM3001)mA Surge forward current current t p < 1 s I FSM 6001)mA Power dissipationP tot230mW 2Document Number 85508Rev. 1.7, 16-Oct-06BAT54-V/54A-V/54C-V/54S-VVishay Semiconductors Thermal CharacteristicsT amb = 25°C, unless otherwise specified1)Device on fiberglass substrate, see layout on next page.Electrical CharacteristicsT amb = 25°C, unless otherwise specifiedLayout for R thJA testThickness:Fiberglass 1.5 mm (0.059 in.)Copper leads 0.3 mm (0.012 in.)ParameterT est condition Symbol V alue Unit Thermal resistance junction to ambiant air R thJA 4301)K/W Junction temperature T j 125°C Storage temperature rangeT stg- 65 to + 150°CParameterTest conditionSymbol Min Typ.MaxUnit Reverse Breakdown voltage I R = 100 µA (pulsed)V (BR)30V Leakage current Pulse test t p < 300 µs, δ < 2 % at V R = 25 VI R 2µA Forward voltageI F = 0.1 mA, t p < 300 µs, δ < 2 %V F 240m V I F = 1 mA, t p < 300 µs, δ < 2 %V F 320m V I F = 10 mA, t p < 300 µs, δ < 2 %V F 400m V I F = 30 mA, t p < 300 µs, δ < 2 %V F 500m V I F = 100 mA, t p < 300 µs, δ < 2 %V F 800m V Diode capacitance V R = 1 V , f = 1 MHz C D 10pF Reverse recovery timeI F = 10 mA to I R = 10 mA,i R = 1 mA, R L = 100 Ωt rr5nsBAT54-V/54A-V/54C-V/54S-VDocument Number 85508Rev. 1.7, 16-Oct-06Vishay Semiconductors3Typical CharacteristicsT amb = 25°C, unless otherwise specifiedFigure 1. Typical Forward V oltage Forward Current at V ariousTemperaturesFigure 2. Diode Capacitance vs. Reverse V oltage V RFigure 3. Typical V ariation of Reverse Current at V ariousTemperatures 4Document Number 85508Rev. 1.7, 16-Oct-06BAT54-V/54A-V/54C-V/54S-V Vishay SemiconductorsPackage Dimensions in mm (Inches): SOT23BAT54-V/54A-V/54C-V/54S-VDocument Number 85508Rev. 1.7, 16-Oct-06Vishay Semiconductors5Ozone Depleting Substances Policy StatementIt is the policy of V ishay Semiconductor GmbH to1.Meet all present and future national and international statutory requirements.2.Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment.It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs).The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. V arious national and international initiatives are pressing for an earlier ban on these substances.V ishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents.1.Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively2.Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA3.Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.V ishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances.We reserve the right to make changes to improve technical designand may do so without further notice.Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use V ishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify V ishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personaldamage, injury or death associated with such unintended or unauthorized use.V ishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, GermanyDocument Number: 91000Revision: 18-Jul-081DisclaimerLegal Disclaimer NoticeVishayAll product specifications and data are subject to change without notice.Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product.Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products.No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay.The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications.Product names and markings noted herein may be trademarks of their respective owners.元器件交易网。
BAT54H中文资料
元器件交易网
Philips Semiconductors
BAT54H
Schottky barrier single diode in SOD123F package
11. Revision history
Table 9: Revision history
Document ID
BAT54H
Schottky barrier single diode in SOD123F package
3.6 2.7 3.4 2.5
1.7 1.5
1
1.2 1.0
0.55 0.35
Dimensions in mm
Fig 4. Package outline SOD123F
2
0.70 0.55
0.25 0.10
BAT54H
Schottky barrier single diode in SOD123F package
7. Characteristics
Table 7: Characteristics Tamb = 25 °C unless otherwise specified.
Symbol Parameter
15
Cd (pF)
10
103 IR (µA) 102
10
msa893 (1)
(2)
1
(3)
10−1 0
10
20 VR (V) 30
(1) Tamb = 125 °C (2) Tamb = 85 °C (3) Tamb = 25 °C
Fig 2. Reverse current as a function of reverse voltage; typical values
BAT54CT-7-F中文资料
• Terminals: Finish - Solderable per MIL-STD-202, Method 208 J
• Lead Free Plating (Matte Tin Finish annealed over Alloy 42
leadframe).
• Polarity: See Diagrams Below
2002 N
Jan 1
2003 P
2004 R
2005 S
2006 T
2007 U
2008 V
2009 W
2010 X
2011 Y
Feb March Apr
May
Jun
Jul
Aug
Sep
Oct
Nov
2
3
4
5
6
7
8
9
O
N
2012 Z
Dec D
IMPORTANT NOTICE Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages.
BAT54SWT1G;BAT54SWT1;中文规格书,Datasheet资料
November, 2011 − Rev. 10
1
Publication Order Number: BAT54SWT1/D
/
BAT54SWT1G, NSVBAT54SWT1G
TA = 85C
TA = 25C 0 5 15 25 10 20 VR, REVERSE VOLTAGE (VOLTS) 30
Figure 3. Leakage Current
14 CT, TOATAL CAPACITANCE (pF) 12 10 8 6 4 2 0 0 5 10 15 20 25 30
Figure 1. Recovery Time Equivalent Test Circuit
2
/
BAT54SWT1G, NSVBAT54SWT1G
100 1 25C IF, FORWARD CURRENT (mA) 85C 10 1 50C 1.0 25C 0.1 0.0 − 40C
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
肖特基二极管 BAT54W-D 数据表说明书
BAT54WSchottky Barrier DiodeThese Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand held and portable applications where space is limited.Features•Extremely Fast Switching Speed•Extremely Low Forward V oltage − 0.35 V (Typ) @ I F = 10 mAdc •NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC −Q101Qualified and PPAP Capable•These Devices are Pb −Free, Halogen Free/BFR Free and are RoHS Compliant*MAXIMUM RATINGS (T J = 125°C unless otherwise noted)RatingSymbol ValueUnit Reverse VoltageV R 30V Forward Power Dissipation @ T A = 25°CDerate above 25°C P F2001.6mW mW/°CForward Current (DC)I F 200 MaxmA Non −Repetitive Peak Forward Current,t p < 10 msecI FSM600mARepetitive Peak Forward Current Pulse Wave = 1 sec, Duty Cycle = 66%I FRM300mAThermal Resistance, Junction −to −Ambient 10 mm 2 pad, 1 oz. Cu 100 mm 2 pad, 1 oz. Cu R qJA285216°C/WJunction Temperature T J −55 to 125°C Storage Temperature RangeT stg−55 to +150°CStresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.*For additional information on our Pb −Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.3130 VOLTSCHOTTKY BARRIER DETECTOR AND SWITCHINGDIODE†For information on tape and reel specifications,including part orientation and tape sizes, please refer to our T ape and Reel Packaging Specifications Brochure, BRD8011/D.Device Package Shipping †ORDERING INFORMATIONBAT54WT1G SOT −323(Pb −Free)3,000 / Tape & Reel SOT −323CASE 419STYLE 2MARKING DIAGRAMB4M G GB4= Device Code M = Date Code*G= Pb −Free Package(Note: Microdot may be in either location)*Date Code orientation may vary depending up-on manufacturing location.1NSVBAT54WT1GSOT −323(Pb −Free)3,000 / Tape & ReelELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted)CharacteristicSymbol Min Typ Max Unit Reverse Breakdown Voltage (I R = 10 m A)V (BR)R 30−−V Total Capacitance(V R = 1.0 V, f = 1.0 MHz)C T −7.610pF Reverse Leakage (V R = 25 V)I R −0.5 2.0m Adc Forward Voltage (I F = 0.1 mA)(I F = 1.0 mA)(IF = 10 mA)(I F = 30 mA)(I F = 100 mA)V F−−−−−0.220.290.350.410.520.240.320.400.500.80VReverse Recovery Time(I F = I R = 10 mAdc, I R(REC) = 1.0 mAdc, Figure 1)t rr−−5.0nsNotes: 1. A 2.0 k W variable resistor adjusted for a Forward Current (I F ) of 10 mA.2. Input pulse is adjusted so I R(peak) is equal to 10 mA.3. t p » t rrV Rt r10%90%I I OUTPUT PULSE(I F = I R = 10 mA; measuredat i R(REC) = 1 mA)INPUT SIGNALFigure 1. Recovery Time Equivalent Test CircuitC T , T O T A L C A P A C I T A N C E (p F )100V F , FORWARD VOLTAGE (VOLTS)101.00.110V R , REVERSE VOLTAGE (VOLTS)1.00.10.010.001V R , REVERSE VOLTAGE (VOLTS)5101530Figure 2. Forward VoltageFigure 3. Leakage CurrentFigure 4. Total Capacitance10010002520I R , R E V E R S E C U R R E N T (m A )I F , F O R W A R D C U R R E N T (m A )14121086420SC −70 (SOT −323)CASE 419ISSUE PDATE 07 OCT 2021SCALE 4:1STYLE 3:PIN 1.BASE2.EMITTER3.COLLECTOR STYLE 4:PIN 1.CATHODE2.CATHODE3.ANODE STYLE 2:PIN 1.ANODE2.N.C.3.CATHODE STYLE 1:CANCELLEDSTYLE 5:PIN 1.ANODE 2.ANODE 3.CATHODE STYLE 6:PIN 1.EMITTER 2.BASE3.COLLECTORSTYLE 7:PIN 1.BASE 2.EMITTER 3.COLLECTORSTYLE 8:PIN 1.GATE 2.SOURCE 3.DRAINSTYLE 9:PIN 1.ANODE 2.CATHODE3.CATHODE-ANODESTYLE 10:PIN 1.CATHODE 2.ANODE3.ANODE-CATHODEXX M G G XX = Specific Device Code M = Date CodeG= Pb −Free PackageGENERICMARKING DIAGRAM1STYLE 11:PIN 1.CATHODE2.CATHODE3.CATHODE*This information is generic. Please refer to device data sheet for actual part marking.Pb −Free indicator, “G” or microdot “G ”, may or may not be present. Some products maynot follow the Generic Marking.MECHANICAL CASE OUTLINEPACKAGE DIMENSIONSPUBLICATION ORDERING INFORMATIONTECHNICAL SUPPORTNorth American Technical Support:Voice Mail: 1 800−282−9855 Toll Free USA/Canada Phone: 011 421 33 790 2910LITERATURE FULFILLMENT :Email Requests to:*******************onsemi Website: Europe, Middle East and Africa Technical Support:Phone: 00421 33 790 2910For additional information, please contact your local Sales Representative。
BAT54C中文资料_数据手册_参数
Typ.
Max. Unit
1 µA
100
240
320
400 mV
500
900
Symbol
Table 5. Dynamic characteristics
Parameter
Test conditions
C Diode capacitance
current (typical values)
C(pF) 10
F=1MHz
VOSC=30mVRMS Tj=25°C
1.E+00 IFM(A) 1.E-01
Tj=100°C
1.E-02 1.E-03
Tj=50°C Tj=25°C Tj=-40 °C
VR(V) 1
1.E-04
VFM(V)
1
10
100
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3
1
Characteristics
BAT54
Table 2. Absolute ratings (limiting values at Tj = 25 °C, unless otherwise specified)
Symbol
Parameter
Value
Unit
VRRM IF
IFSM Tstg Tj TL
0.148
Figure 12. SOD123 footprint dimensions in mm (inches)
6/15
BAT54S中文资料_数据手册_参数
Package SOT-23 3L SOT-23 3L SOT-23 3L SOT-23 3L SOT-23 3L SOT-23 3L
Packing Method 3k per Tape and Reel 10k per Tape and Reel 3k per Tape and Reel 3k per Tape and Reel 3k per Tape and Reel 10k per Tape and Reel
PD RJA
Power Dissipation Thermal Resistance, Junction-to-Ambient
Connection Diagram
BAT54 3
BAT54A 3
1
2NC
BAT54C 312BAT54S3121
2
Ordering Information
Part Number BAT54
BAT54_D87Z BAT54A BAT54C BAT54S
BAT54S_D87Z
Top Mark L4P L4P L42 L43 L44 L44
ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at /site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
SNJ5407FK中文资料
PACKAGING INFORMATIONOrderable Device Status(1)PackageType PackageDrawingPins PackageQtyEco Plan(2)Lead/Ball Finish MSL Peak Temp(3)JM38510/00803BCA ACTIVE CDIP J141None Call TI Level-NC-NC-NC JM38510/00803BDA ACTIVE CFP W141None Call TI Level-NC-NC-NC SN5407J ACTIVE CDIP J141None Call TI Level-NC-NC-NC SN5417J ACTIVE CDIP J141None Call TI Level-NC-NC-NCSN7407D ACTIVE SOIC D1450Pb-Free(RoHS)CU NIPDAU Level-2-260C-1YEAR/Level-1-235C-UNLIMSN7407DR ACTIVE SOIC D142500Pb-Free(RoHS)CU NIPDAU Level-2-260C-1YEAR/Level-1-235C-UNLIMSN7407J OBSOLETE CDIP J14None Call TI Call TISN7407N ACTIVE PDIP N1425Pb-Free(RoHS)CU NIPDAU Level-NC-NC-NC SN7407N3OBSOLETE PDIP N14None Call TI Call TISN7407NSR ACTIVE SO NS142000Pb-Free(RoHS)CU NIPDAU Level-2-260C-1YEAR/Level-1-235C-UNLIMSN7417D ACTIVE SOIC D1450Pb-Free(RoHS)CU NIPDAU Level-2-260C-1YEAR/Level-1-235C-UNLIMSN7417DR ACTIVE SOIC D142500Pb-Free(RoHS)CU NIPDAU Level-2-260C-1YEAR/Level-1-235C-UNLIMSN7417N ACTIVE PDIP N1425Pb-Free(RoHS)CU NIPDAU Level-NC-NC-NC SN7417N3OBSOLETE PDIP N14None Call TI Call TISN7417NSR ACTIVE SO NS142000Pb-Free(RoHS)CU NIPDAU Level-2-260C-1YEAR/Level-1-235C-UNLIMSNJ5407FK ACTIVE LCCC FK201None Call TI Level-NC-NC-NCSNJ5407J ACTIVE CDIP J141None Call TI Level-NC-NC-NCSNJ5407W ACTIVE CFP W141None Call TI Level-NC-NC-NCSNJ5417J ACTIVE CDIP J141None Call TI Level-NC-NC-NC(1)The marketing status values are defined as follows:ACTIVE:Product device recommended for new designs.LIFEBUY:TI has announced that the device will be discontinued,and a lifetime-buy period is in effect.NRND:Not recommended for new designs.Device is in production to support existing customers,but TI does not recommend using this part in a new design.PREVIEW:Device has been announced but is not in production.Samples may or may not be available.OBSOLETE:TI has discontinued the production of the device.(2)Eco Plan-May not be currently available-please check /productcontent for the latest availability information and additional product content details.None:Not yet available Lead(Pb-Free).Pb-Free(RoHS):TI's terms"Lead-Free"or"Pb-Free"mean semiconductor products that are compatible with the current RoHS requirements for all6substances,including the requirement that lead not exceed0.1%by weight in homogeneous materials.Where designed to be soldered at high temperatures,TI Pb-Free products are suitable for use in specified lead-free processes.Green(RoHS&no Sb/Br):TI defines"Green"to mean"Pb-Free"and in addition,uses package materials that do not contain halogens, including bromine(Br)or antimony(Sb)above0.1%of total product weight.(3)MSL,Peak Temp.--The Moisture Sensitivity Level rating according to the JEDECindustry standard classifications,and peak solder temperature.Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided.TI bases its knowledge and belief on information provided by third parties,and makes no representation or warranty as to the accuracy of such information.Efforts are underway to better integrate information from third parties.TI has taken and continues to takereasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.TI and TI suppliers consider certain information to be proprietary,and thus CAS numbers and other limited information may not be available for release.In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s)at issue in this document sold by TIto Customer on an annual basis.元器件交易网IMPORTANT NOTICETexas Instruments Incorporated and its subsidiaries (TI) reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services at any time and to discontinue any product or service without notice. Customers should obtain the latest relevant information before placing orders and should verify that such information is current and complete. All products are sold subject to TI’s terms and conditions of sale supplied at the time of order acknowledgment.TI warrants performance of its hardware products to the specifications applicable at the time of sale in accordance with TI’s standard warranty. T esting and other quality control techniques are used to the extent TI deems necessary to support this warranty. Except where mandated by government requirements, testing of all parameters of each product is not necessarily performed.TI assumes no liability for applications assistance or customer product design. Customers are responsible for their products and applications using TI components. T o minimize the risks associated with customer products and applications, customers should provide adequate design and operating safeguards.TI does not warrant or represent that any license, either express or implied, is granted under any TI patent right, copyright, mask work right, or other TI intellectual property right relating to any combination, machine, or process in which TI products or services are used. Information published by TI regarding third-party products or services does not constitute a license from TI to use such products or services or a warranty or endorsement thereof. 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LBAT54HT1G中文资料
LBAT54HT1G中文资料Schottky Barrier DiodesANODE1CATHODEMAXIMUM RATINGS (T J =125°C unless otherwise noted )RatingSymbol Value Unit Reverse VoltageV R30VTHERMAL C HARACTERISTICSCharacteristicSymbol Max Unit Total Device Dissipation FR-5 Board,*P D 200mW T A = 25°CDerate above 25°C1.57mW/°C Thermal Resistance Junction to Ambient R θJA 635°C/W Junction and Storage TemperatureT J ,T stg150°C* FR-4 Minimum Pad12L BAT54HT1These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward volt-age reduces conduction loss.Miniature surface mount package is excellent for hand held and portable applications where space is limited.Extremely Fast Switching SpeedLow Forward Voltage —0.35 Volts (Typ) @ I F = 10 mAdc ?Device Marking: JV ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted) (EACH DIODE)CharacteristicSymbol Min Typ Max Unit Reverse Breakdown Voltage (I R = 10 μA)V (BR)R 30——Volts Total Capacitance (V R = 1.0 V, f = 1.0 MHz)C T —7.610pF Reverse Leakage (V R = 25 V)I R —0.5 2.0μAdc Forward Voltage (I F = 0.1 mAdc)V F —0.220.24Vdc Forward Voltage (I F = 0.15 mAdc)V F —0.240.26Vdc Forward Voltage (I F = 0.15 mAdc, T j =-25°C)V F —0.330.35Vdc Forward Voltage (I F = 0.15 mAdc, T j =85°C)V F —0.160.18Vdc Forward Voltage (I F = 30 mAdc)V F —0.410.5Vdc Forward Voltage (I F = 100 mAdc)V F—0.52 1.0Vdc Reverse Recovery Time(I F = I R = 10 mAdc, I R(REC) = 1.0 mAdc, Figure 1)t rr ——5.0ns Forward Voltage (I F = 1.0 mAdc)V F —0.290.32Vdc Forward Voltage (I F = 10 mAdc)V F —0.350.40Vdc Forward Current (DC)I F ——200mAdc Repetitive Peak Forward CurrentI FRM ——300mAdc Non–Repetitive Peak Forward Current (t < 1.0 s)I FSM——600mAdcSOD-323Pb-Free Package May be Available. The G.Suffix Denotes aPb-Free Lead FinishDevice Package Shipping LBAT54HT1 SOD-3233000/Tape & Reel LBAT54HT1G SOD-3233000/Tape & ReelO DERING INFORMATIONNotes: 1.A 2.0k ?variable resistor adjusted for a Forward Current (I F ) of 10mA.2. Input pulse is adjusted so I R(peak)is equal to 10mA.3. t p ? t rr+10 V2.0 k820?100μH0.1μFD U T0.1μF50?OUTPUTPULSE GENERATORt r50?INPUT SAMPLING OSCILLOSCOPEt p t10%90%I FI Rt rrtiR(REC)= 1.0 mAOUTPUT PULSE(I F = I R = 10 mA; MEASUREDat i R(REC)= 1.0 mA)INPUT SIGNALI FVRLBAT54HT1V F , FORWARD VOLTAGE (VOLTS) Figure 2. Forward VoltageV R , REVERSE VOLTAGE (VOLTS) Figure 3. Leakage CurrentV R , REVERSE VOLTAGE (VOLTS) Figure 4. Total Capacitance TYPICAL CHARACTERISTICS100101.00.10.00.10.20.30.40.50.61000100101.00.010.00151015202530I F , F O R W A R D C U R R E N T (m A )I R , R E V E R S E C U R R E N T (μA )14121086420051015202530C T , T O A T A L C A P A C I T A N C E (p F ) Figure 1. Recovery Time Equivalent Test Circuit 150°C125°C85°C25°C–40°C–55°C–25°CJSOD -323NOTES:1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.2. CONTROLLING DIMENSION: MILLIMETERSMIN MAX MIN MAX 1.60 1.800.0630.0711.15 1.350.0450.0530.80 1.000.0310.0390.250.400.0100.0160.15 REF0.006 REF 0.000.100.0000.0040.0890.1770.00350.00702.302.700.0910.106MILLIMETERS DIM AB C D E H J KINCHESLBAT54HT1PIN:1:CATHODE2:ANODE。
BAT54T
SCHOTTKY DIODE
SOD-123
1.80(.071) 1.40(.055)
FEATURES
Low forward voltage drop Fast switching time Surface mount package ideally suited for automatic insertion
3.86(0.152) 3.56(0.145)
2.84(0.112) 2.54(0.100)
.71(0.028) .50(0.020) .15(.006) MAX 1.35(.053) .94(.037)
MECHANICAL DATA
Case: Molded plastic body Terminals: Plated leads solderable per MIL-STD-750, Method 2026 Polarity: Polarity symbols marked on case Marking: L9
FIG. 3- TYPICAL JUNCTION CAPACITANCE
10 0.4
FIG. 4- FORWARD POWER LOSS CHARACTERISTICS
JUNCTION CAPACITANCE-CT(pF)
AVERAGE PWER LOSS (Watts)
0.3
Tj=25 C
RMS Limit 0.2 D=0.2 D=-0.25 0.1 D=0.33 DC D=0.75 D=0.50
Unit V mV mV mV mV mV
Conditions IR=100uA IF=0.1mA IF=1.0mA IF=10mA IF=30mA IF=100mA VR=25V VR=0,f=1.0MHz IF=10mA,IR=10mA to 1mA RL=100
BAT54系列二极管
REVERSE VOLTAGE , (V)
FIG.3 - TYPICAL FORWARD VOLTAGE FORWARD CURRENT AT VARIOUS TEMPERATURE
1000
FIG.4 - TYPICAL VARIATION OF REVERSE CURRENT AT VARIOUS TEMPERATURES
Unit
V mA mA mW K/W °C °C
Maximum Repetitive Peak Reverse Voltage Maximum Rectified Average Forward Current Maximum Peak Forward Surge Current at tp < 1 s Power Dissipation Thermal Resistance Junction to Ambient Air Junction Temperature Range Storage Temperature Range
Note : (1) These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Page 1 of 2
Rev. 02: July 2, 2008
14 12 10 8 6 4 2 0 f = 1.0 MHz
250
POWER DISSIPATION, (mA)
200 RӨJA = 430 K/W 150
100
50
0
0
25
50
75
100
125
150
普传变频调速器china
版本：1.1(适用软体V9.44以上)!注意！警告!注意这些贴在驱动器上或在这本使用说明书内的警告、注意符号。
它们提醒错误的操作可能对人体产生危险，或损坏驱动器。
在安装驱动器进入操作之前，请详读阅读以下的安全预防和警告事项。
安全预防和警告请确定在驱动器上的警告符号被保持在清晰的状态，亦请替换不清晰或被损坏的符号。
在开始之前，请熟读说明书使你自己熟悉驱动器的操作。
不要准许不合格的人员操作驱动器。
!警告这个驱动器将产生危险的电压并控制马达使机械零件旋转。
如果不适当操作可能对人体产生严重伤害或对驱动器造成损坏。
只有合格的人员才能操作这个驱动器。
这些人员必需熟悉所有的警告符号。
正确的安装、操作和维护，才能确保安全及维持设备的运转顺畅。
注意：驱动器是在高电压下工作的。
注意：切掉电源後驱动器内仍有高压的直流电。
因此关闭电源後五分钟才能打开驱动器的盖子。
注意：即使马达是停止的，下列的端子仍然可能带有危险的电压。
端子R、S、T、U、V、W、P、N、B、PR、BR注意：只有合格的人员才可以安装、配线及修理驱动器的故障。
注意：某些参数设定後，可能在电源输入之後立刻引起驱动器自动地开始运转。
定义合格的人员这本说明书内所指的合格人员，必须熟悉本驱动器的内部结构、安装程序、操作方法、维修步骤以及能够遵循安全措施以防危险意外的人员。
【危险】在这本说明书内和产品标签上，【危险】指示若不遵循适当的预防方法或步骤，可能对人的身体产生伤害。
【警告】在这本说明书内和产品标签上，【警告】指示若不遵循适当的预防方法或步骤，可能对人的身体产生伤害、或对机器产生损坏。
【注意】在这本说明书内和产品标签上，【注意】指示重要的消息或操作时的注意事项。
!危险和警告确保选择安装位置在安全的区域，防止高温、湿气和水滴的泼溅。
并防止小孩子们或一般无关的民众接近。
本驱动器只能用在被制造厂商所认可的场合。
未经认可的修正、修改可能引起着火、导电等伤害。
将本使用说明书保存在使用者随时能够取用参考的地方。
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SURFACE MOUNT SCHOTTKY BARRIER DIODE
Features
·Case: SOT-523
·Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0
·Moisture sensitivity: Level 1 per J-STD-020C
·Terminals: Finish - Solderable per MIL-STD-202, Method 208·Lead Free Plating (Matte Tin Finish annealed over Alloy 42leadframe).
·Polarity: See Diagrams Below
·Marking: See Diagrams Below & Page 2·Weight: 0.002 grams (approx.)·
Ordering Information, see Page 2
Mechanical Data
Maximum Ratings
@ T A = 25°C unless otherwise specified
·Ultra-Small Surface Mount Package ·Low Forward Voltage Drop ·Fast Switching
·PN Junction Guard Ring for Transient and ESD Protection
·Lead Free/RoHS Compliant (Note 3)
Notes: 1. Device mounted on FR-4 PC board with recommended pad layout, which can be found on our website at /datasheets/ap02001.pdf. 2. Short duration test pulse used to minimize self-heating efffect. 3. No purposefully added lead.
Electrical Characteristics
@ T A = 25°C unless otherwise specified
BAT54T Marking: L1BAT54AT Marking: L2
BAT54CT Marking: L3
BAT54ST Marking: L4
Ordering Information
(Note 4)
Notes:
4. For Packaging Details: go to our website at /datasheets/ap02007.pdf.
0.001
0.01
0.1
10
1
100
51015202530
V , INSTANTANEOUS REVERSE VOLTAGE (V)
R Fig. 3 Typical Reverse Characteristics
Date Code Key
XX = Product Type Marking Code (See Page 1, e.g. L1 = BAT54T) YM = Date Code Marking Y = Year (ex: N = 2002)
M = Month (ex: 9 = September)XXYM
Marking Information
2
4
10
8
612
010*******
25C , T O T A L C A P A C I T A N C E (p F )
T V , REVERSE VOLTAGE (V)
R Fig. 4 Typical Capacitance vs. Reverse Voltage
0.1
0.01
1
0.001
0.0001
1.0
0.4
0.6
0.8
0.2
I , I N S T A N T A N E O U S
F O R W A R D C U R R E N T (A )
F V , INSTANTANEOUS FORWARD VOLTAGE (V)
F Fig. 2 Forward Characteristics
0100
25
50
75
100
125
P , P O W E R D I S S I P A T I O N (m W )
D T , AMBIENT TEMPERATUR
E (°C)
A Fig. 1 Power Derating Curve
200
IMPORTANT NOTICE
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages.
LIFE SUPPORT
Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the President of Diodes Incorporated.。