POWER GATING DEVICES AND METHODS
- 1、下载文档前请自行甄别文档内容的完整性，平台不提供额外的编辑、内容补充、找答案等附加服务。
- 2、"仅部分预览"的文档,不可在线预览部分如存在完整性等问题,可反馈申请退款(可完整预览的文档不适用该条件!)。
- 3、如文档侵犯您的权益，请联系客服反馈,我们会尽快为您处理(人工客服工作时间：9:00-18:30)。
专利名称：POWER GATING DEVICES AND METHODS 发明人：KIM, Jung Pill,KIM, Sungryul,KIM, Taehyun 申请号：EP16760244.0
申请日：20160812
公开号：EP3347989A1
公开日：
20180718
专利内容由知识产权出版社提供
摘要：A device includes a first power rail and a second power rail. A second voltage of the second power rail is derived from a first voltage of the first power rail. The device includes a power gating circuit that includes a switching device connected between the first power rail and the second power rail. The power gating circuit further includes a clamping diode connected in parallel to the switching device between the first power rail and the second power rail. The device further includes a logic circuit including a first inverter and a second inverter. The first inverter includes a first transistor and the second inverter includes a first transistor. A source/drain terminal of the first transistor of the first inverter is directly coupled to the first power rail, and a source/drain terminal of the first transistor of the second inverter is directly coupled to the second power rail.
申请人：Qualcomm Incorporated
地址：5775 Morehouse Drive San Diego, CA 92121-1714 US
国籍：US
代理机构：Dunlop, Hugh Christopher
更多信息请下载全文后查看