WSD6040DN56 N-Ch MOSFET 产品说明书

Steady State
RθJC
Thermal Resistance-Junction to Case
Steady State
Rating 60 ±20 36 22 8.4 6.8 140 37.8 15.1 2.08 1.33 16 64 18 150
-55 to 150 60 3.3
Units V V A
2.0
1.5
1.0
0.5
0.0 -50
RON@Tj=25oC: 12mW -25 0 25 50 75 100 125 150
Tj - Junction Temperature (°C)
IS - Source Current (A)
Source-Drain Diode Forward
100
10
Tj=150oC
QG - Gate Charge (nC)
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Rev 2: Apr.2019
Attention
1,AnyandallWinsokpowerproductsdescribedorcontainedhereindonothavespecificationsthatcanhandle applicationsthatrequireextremelyhighlevelsofreliability,suchaslifeͲsupportsystems,aircraft'scontrolsystems,or otherapplicationswhosefailurecanbereasonablyexpectedtoresultinseriousphysicaland/ormaterialdamage. ConsultwithyourWinsokpowerrepresentativenearestyoubeforeusinganyWinsokpowerproductsdescribedor containedhereininsuchapplications.
800
400 Coss
0 Crss 0 5 10 15 20 25 30 35 40
VDS - Drain-Source Voltage (V)
VGS - Gate-source Voltage (V)
Gate Charge
10
9
VDS=30V I =25A
DS
8
7
6
5
4
3
2
1
00
9
18
27
36
45
L=0.5mH L=0.5mH
IS
Diode Continuous Forward Current
TC=25°C
TJ
Maximum Junction Temperature
TSTG
Storage Temperature Range
RθJAb
Thermal Resistance Junction to ambient
Output Characteristics
120
V =4.5,5,6,7,8,9,10V GS
4V
100
80
60
3.5V
40
20
3V
0
0
1
2
3
4
5
VDS - Drain - Source Voltage (V)
DS(ON) R - On - Resistance (mW)
Drain-Source On Resistance
TC=25°C
PD
Maximum Power Dissipation
TC=25°C TC=100°C
PD
Maximum Power Dissipation
TA=25°C TA=70°C
IAS c
Avalanche Current, Single pulse
EAS c
Single Pulse Avalanche Energy
WSD6040DN56
General Description
The WSD6040DN56 is the highest performance trench N-Ch MOSFET with extreme high cell density,which provide excellent RDSON and gate charge for most of the synchronous buck converter applications .
19 22
mΩ
Switching Qg Qgs Qgd
td (on) tr
td(off) tf Rg
Total Gate Charge Gate-Sour Charge Gate-Drain Charge Turn-on Delay Time Turn-on Rise Time Turn-off Delay Time Turn-off Fall Time Gat resistance
30
25
20
15
VGS=4.5V
V =10V
10
GS
5
0
0
20
40
60
80 100
ID - Drain Current (A)
DS(ON) R - On - Resistance (mW)
Gate-Source On Resistance
35 IDS=25A
30
25
20
15
10
5 2 3 4 5 6 7 8 9 10
Symbol
Parameter
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
ID
Continuous Drain Current
TC=25°C TC=100°C
ID
Continuous Drain Current
TA=25°C TA=100°C
IDM a
Pulsed Drain Current
T =25oC j
1
0.1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
VSD - Source - Drain Voltage (V)
C - Capacitance (pF)
3200 2800
Capacitance
Frequency=1MHz
2400 Ciss
2000
1600
1200
Electrical Characteristics @TA=25℃ unless otherwise noted
Symbol Parameter
Conditions
Min. Typ. Max. Unit
Static
V(BR)DSS Drain-Source Breakdown Voltage
IDSS
VGS(TH) Gate Threshold Voltage
Rd DS(on)
Drain-Source On-state Resistance
VGS = VDS, IDS = 250µA VGS = 10V, ID = 25A VGS = 4.5V, ID = 20A
1 1.6 2.5
V
14 17.5 mΩ
VSD d
trr
Qrr
Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge
ISD = 20A , VGS=0V ISD=25A, dlSD/dt=100A/µs
18
A
35
A0.8 1Βιβλιοθήκη 3V27ns
33
nC
Note d：Pulse test ; pulse width≤300µs, duty cycle≤2%. Note e：Guaranteed by design, not subject to production testing.
0 20 40 60 80 100 120 140 160
Tj - Junction Temperature (°C)
ID- Drain Current (A)
Drain Current
40 35 30 25 20 15 10
5 0 TC=25oC,VG=10V
0 20 40 60 80 100 120 140 160
The WSD6040DN56 meet the RoHS and Green Product requirement 100% EAS guaranteed with full function reliability approved.
Features Lead Fre e an d Green Devices Available
Square Wave Pulse Duration (sec)
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Page 3
Rev 2: Apr.2019
WSD6040DN56
N-Ch MOSFET
Typical Operating Characteristics (Cont.)
ID - Drain Current (A)
Tj - Junction Temperature
ID- Drain Current (A)
Rds(on) Limit
Safe Operation Area
300 100
100ms
10
300ms
1
1ms
0.1 TC=25oC
0.1
1
DC
10
10ms
100 300
VDS - Drain - Source Voltage (V)
Zero Gate Voltage Drain Current
IGSS
Gate Leakage Current
VGS = 0V, ID = 250μA
60
VDS = 48 V, VGS = 0V
TJ=85°C
VGS = ±20V, VDS = 0V
V 1
µA 30 ±100 nA
On Characteristics
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Page 4
Rev 2: Apr.2019
WSD6040DN56
N-Ch MOSFET
Typical Operating Characteristics (Cont.)
Normalized On Resistance
Drain-Source On Resistance
2.5 VGS = 10V IDS = 25A
VDS=30V VGS=10V ID=25A
42
nC
6.4
nC
9.6
nC
VGEN=10V VDD=30V
ID=1A RG=6Ω RL=30Ω
17
ns
9
ns
58
ns
14
ns
VGS=0V, VDS=0V, f=1MHz
1.5
Ω
Dynamic Ciss Coss Crss
In Capacitance Out Capacitance Reverse Transfer Capacitance
A
A W
W
A mJ A ℃ ℃ ℃/W ℃/W
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Rev 2: Apr.2019
WSD6040DN56
N-Ch MOSFET
Note a：Pulse width limited by max. junction temperature. Note b：Surface Mounted on 1in2 pad area. Note c：UIS tested and pulse width limited by maximum junction temperature 150℃(initial temperature Tj=25℃).
VGS=0V VDS=30V f=1MHz
2100
pF
140
pF
100
pF
Drain-Source Diode Characteristics and Maximum Ratings
IS
Continuous Source Current
ISM
Pulsed Source Current3
VG=VD=0V , Force Current
N-Ch MOSFET
ID 36A
Applications Secondary Side Synchronous Rectification DC-DC Converter Motor Control Load Switching
DFN5x6A-8_EP Pin Configuration
Absolute Maximum Ratings @TA=25℃ unless otherwise noted
VGS - Gate - Source Voltage (V)
Normalized Threshold Voltage
Gate Threshold Voltage
1.6 IDS =250mA
1.4
1.2
1.0
0.8
0.6
0.4
0.2 -50 -25 0 25 50 75 100 125 150
Tj - Junction Temperature (°C)
Normalized Transient Thermal Resistance
Thermal Transient Impedance
3 1
0.1
0.01
Duty = 0.5 0.2 0.1 0.05
0.02 0.01
1E-3
Single Pulse
1E-4 1E-6
1E-5
1E-4
RqJC :3.3oC/W 1E-3 0.01 0.1
(RoH SCom plia nt) 100% UIS + Rg Tested Reliable and Rugged Moistu re Sensitivity Level MSL1
(per JED EC J-STD-020D)
Product Summery BVDSS 60V
RDSON 17.5mΩ
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Page 2
Rev 2: Apr.2019
WSD6040DN56
N-Ch MOSFET
Typical Operating Characteristics
Ptot - Power (W)
Power Dissipation
40 35 30 25 20 15 10
5 0 TC=25oC