FS0202N资料
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Tj initial = 25 ºC Tj initial 25 ºC ITSM
Fig. 8: On-state characteristics (maximum values).
ITM(A) 100
10
Tj max
10
I2 t
1
Tj max Vto = 1.05 V Rt = 0.150 Ω
1 1 10
Rth (j-l)
T tab (ºC) -85
1.2 1.0 0.8 0.6 0.4
α
1.2
DC
1.0
Rth (j-a) α = 180 º α = 120 º α = 90 º
-95
0.8 -105 0.6 0.4 -115
α = 60 º
0.2 0.0 0
α = 30 º
0.2 IT(AV)(A) 0.0 0 20 40 60 80 -125 Tamb (ºC) 100 120 140
元器件交易网
FS02...N
SURFACE MOUNT SCR
SOT223 (Plastic)
On-State Current 1.25 Amp Gate Trigger Current < 200 µA Off-State Voltage 200 V ÷ 800 V
These series of Silicon Controlled R ectifier use a high performance PNPN technology. These parts are intended for general purpose applications where high gate sensitivity is required using surface mount technology.
0.2 0.4 0.6 0.8 1.0 1.2 1.4
Fig. 3: Average on-state current versus tab temperature I T(AV) (A) 1.6
DC
Fig. 4: Relative variation of thermal impedance junction to ambient versus pulse duration. Zth(j-a) / Rth(j-a) 1.00
IT(RMS) IT(AV) ITSM ITSM I2t VGRM IGM PGM PG(AV) Tj Tstg Tsld
-40 -40 10s max.
* with 5 cm2 copper (e= 35µm) surface under tab.
SYMBOL
PARAMETER Repetitive Peak Off State Voltage
3.3
1.5
(3x) 1
2.3
6.4
1.5 4.6
Jun - 02
ºC/W ºC/W
PART NUMBER INFORMATION
F
FAGOR SCR CURRENT
S
02
01
B
N
00
RB
PACKAGING FORMING CASE VOLTAGE
SENSITIVITY
Jun - 02
元器件交易网
FS02...N
SURFACE MOUNT SCR
1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 0 10 20 30 40 50 60 70 80 90 100 110 120 130 Fig. 5: Relative variation of gate trigger current and holding current versus junction temperature. Igt (Tj) Igt (Tj = 25 ºC) 10.0 9.0 8.0 7.0 6.0
Tj initial = 25 ºC
Ih (Tj) Ih (Tj = 25 ºC)
20
15
5.0 4.0 3.0 2.0 1.0 0.0 -40 -20 0 20 40 60 80 100 120 140 Tj (ºC) 0 1 10 100 1000 Number of cycles
Ih
10
5
Jun - 02
Fig. 1: Maximum average power dissipation versus average on-state current P (W) 1.4
360 º
Fig. 2: Correlation between maximum average power dissipation and maximum allowable temperature (Tamb and T tab). P (W) 1.4
IGT IDRM / IRRM VTM VT(O) rd VGT VGD IH IL dv / dt di / dt Rth(j-l) Rth(j-a)
Critical Rate of Current Rise IG = 2 x IGT Tr ≤ 100 ns, F = 60 Hz, Tj = 125 ºC Thermal Resistance Junction-Leads for DC Thermal Resistance Junction-Ambient
Igt α = 180 º
0.10
Standard foot print, e (Cu) = 35 µm
T lead (ºC)
0.01 1E-3
tp (s) 1E-2 1E-1 1E+0 1E+1 1E+2 5E+2
Fig. 6: Non repetitive surge peak on-state current versus number of cycles. I TSM (A) 25
元器件交易网
FS02...N
SURFACE MOUNT SCR
Fig. 7: Non repetitive surge peak on-state current for a sinusoidal pulse with width: tp ≤ 10 ms, and corresponding value of I2t. ITSM(A). I2t (A2s) 100
tp(ms)
0.1 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5
VTM(V)
PACKAGE MECHANICAL DATA SOT223 (Plastic)
A 16º max. (4x) B C 10º max. H E D F I J K
REF. A B C D E F G H I J K Min. 6.30 6.70 3.30 2.95 0.65 1.50 0.50 0.25
Absolute Maximum Ratings, according to IEC publication No. 134
SYMBOL PARAMETER On-state Current* Average On-state Current* Non-repetitive On-State Current Non-repetitive On-State Current Fusing Current Peak Reverse Gate Voltage Peak Gate Current Peak Gate Dissipation Gate Dissipation Operating Temperature Storage Temperature Soldering Temperature CONDITIONS Half Cycle, Θ = 180 º, Ttab = 95 ºC Half Cycle, Θ = 180 º, Ttab = 95 ºC Half Cycle, 60 Hz, Tj = 25 ºC Half Cycle, 50 Hz, Tj = 25 ºC tp = 10ms, Half Cycle IGR = 10 µA, Tj = 25 ºC 20 µs max. 20 µs max. 20 ms max. Min. 1.25 0.8 25 22.5 2.5 8 1.2 3 0.2 +125 +150 260 Max. Unit A A A A A2s V A W W ºC ºC ºC
G
DIMENSIONS Milimeters Typ. 6.50 7.00 3.50 4.60 2.30 3.00 0.70 1.60 0.60 0.02 0.30
Max. 6.70 7.30 3.70 3.15 0.85 1.70 0.70 0.05 0.35
Weight: 0.11 g
FOOT PRINT
CONDITIONS RGK = 1 KΩ B 200
VOLTAGE D 400 M 600 N 800
Unit V
VDRM VRRM
Jun - 02
元器件交易网
FS02...N
SURFACE MOUNT SCR
Electrical Characteristics
SYMBOL PARAMETER Gate Trigger Current Off-State Leakage Current On-state Voltage On-state Threshold Voltage Dinamic Resistance Gate Trigger Voltage Gate Non Trigger Voltage Holding Current Latching Current Critical Rate of Voltage Rise CONDITIONS MIN VD = 12 VDC , RL = 140Ω, Tj = 25 ºC MAX VD = VDRM , RGK = 1KΩ, Tj = 125 ºC MAX VR = VRRM , Tj = 25 ºC MAX at IT = 1.6 Amp, tp = 380 µs, Tj = 25 ºC MAX Tj = 125 ºC MAX Tj = 125 ºC MAX VD = 12 VDC , RL = 140Ω, Tj = 25 ºC MAX VD = VDRM , RL = 3.3KΩ, RGK = 1KΩ, MIN Tj = 125 ºC IT = 50 mA , RGK = 1KΩ, Tj = 25 ºC IG = 1 mA , RGK = 1KΩ, Tj = 25 ºC VD = 0.67 x VDRM , RGK = 1KΩ, Tj = 125 ºC MAX MAX MIN MIN 01 1 20 SENSITIVITY 04 15 50 02 200 500 5 1.45 0.9 150 0.8 0.1 5 6 15 15 50 25 60 10 20 03 20 200 Unit µA µA V V mΩ V V mA mA V/µs A/µs
Fig. 8: On-state characteristics (maximum values).
ITM(A) 100
10
Tj max
10
I2 t
1
Tj max Vto = 1.05 V Rt = 0.150 Ω
1 1 10
Rth (j-l)
T tab (ºC) -85
1.2 1.0 0.8 0.6 0.4
α
1.2
DC
1.0
Rth (j-a) α = 180 º α = 120 º α = 90 º
-95
0.8 -105 0.6 0.4 -115
α = 60 º
0.2 0.0 0
α = 30 º
0.2 IT(AV)(A) 0.0 0 20 40 60 80 -125 Tamb (ºC) 100 120 140
元器件交易网
FS02...N
SURFACE MOUNT SCR
SOT223 (Plastic)
On-State Current 1.25 Amp Gate Trigger Current < 200 µA Off-State Voltage 200 V ÷ 800 V
These series of Silicon Controlled R ectifier use a high performance PNPN technology. These parts are intended for general purpose applications where high gate sensitivity is required using surface mount technology.
0.2 0.4 0.6 0.8 1.0 1.2 1.4
Fig. 3: Average on-state current versus tab temperature I T(AV) (A) 1.6
DC
Fig. 4: Relative variation of thermal impedance junction to ambient versus pulse duration. Zth(j-a) / Rth(j-a) 1.00
IT(RMS) IT(AV) ITSM ITSM I2t VGRM IGM PGM PG(AV) Tj Tstg Tsld
-40 -40 10s max.
* with 5 cm2 copper (e= 35µm) surface under tab.
SYMBOL
PARAMETER Repetitive Peak Off State Voltage
3.3
1.5
(3x) 1
2.3
6.4
1.5 4.6
Jun - 02
ºC/W ºC/W
PART NUMBER INFORMATION
F
FAGOR SCR CURRENT
S
02
01
B
N
00
RB
PACKAGING FORMING CASE VOLTAGE
SENSITIVITY
Jun - 02
元器件交易网
FS02...N
SURFACE MOUNT SCR
1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 0 10 20 30 40 50 60 70 80 90 100 110 120 130 Fig. 5: Relative variation of gate trigger current and holding current versus junction temperature. Igt (Tj) Igt (Tj = 25 ºC) 10.0 9.0 8.0 7.0 6.0
Tj initial = 25 ºC
Ih (Tj) Ih (Tj = 25 ºC)
20
15
5.0 4.0 3.0 2.0 1.0 0.0 -40 -20 0 20 40 60 80 100 120 140 Tj (ºC) 0 1 10 100 1000 Number of cycles
Ih
10
5
Jun - 02
Fig. 1: Maximum average power dissipation versus average on-state current P (W) 1.4
360 º
Fig. 2: Correlation between maximum average power dissipation and maximum allowable temperature (Tamb and T tab). P (W) 1.4
IGT IDRM / IRRM VTM VT(O) rd VGT VGD IH IL dv / dt di / dt Rth(j-l) Rth(j-a)
Critical Rate of Current Rise IG = 2 x IGT Tr ≤ 100 ns, F = 60 Hz, Tj = 125 ºC Thermal Resistance Junction-Leads for DC Thermal Resistance Junction-Ambient
Igt α = 180 º
0.10
Standard foot print, e (Cu) = 35 µm
T lead (ºC)
0.01 1E-3
tp (s) 1E-2 1E-1 1E+0 1E+1 1E+2 5E+2
Fig. 6: Non repetitive surge peak on-state current versus number of cycles. I TSM (A) 25
元器件交易网
FS02...N
SURFACE MOUNT SCR
Fig. 7: Non repetitive surge peak on-state current for a sinusoidal pulse with width: tp ≤ 10 ms, and corresponding value of I2t. ITSM(A). I2t (A2s) 100
tp(ms)
0.1 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5
VTM(V)
PACKAGE MECHANICAL DATA SOT223 (Plastic)
A 16º max. (4x) B C 10º max. H E D F I J K
REF. A B C D E F G H I J K Min. 6.30 6.70 3.30 2.95 0.65 1.50 0.50 0.25
Absolute Maximum Ratings, according to IEC publication No. 134
SYMBOL PARAMETER On-state Current* Average On-state Current* Non-repetitive On-State Current Non-repetitive On-State Current Fusing Current Peak Reverse Gate Voltage Peak Gate Current Peak Gate Dissipation Gate Dissipation Operating Temperature Storage Temperature Soldering Temperature CONDITIONS Half Cycle, Θ = 180 º, Ttab = 95 ºC Half Cycle, Θ = 180 º, Ttab = 95 ºC Half Cycle, 60 Hz, Tj = 25 ºC Half Cycle, 50 Hz, Tj = 25 ºC tp = 10ms, Half Cycle IGR = 10 µA, Tj = 25 ºC 20 µs max. 20 µs max. 20 ms max. Min. 1.25 0.8 25 22.5 2.5 8 1.2 3 0.2 +125 +150 260 Max. Unit A A A A A2s V A W W ºC ºC ºC
G
DIMENSIONS Milimeters Typ. 6.50 7.00 3.50 4.60 2.30 3.00 0.70 1.60 0.60 0.02 0.30
Max. 6.70 7.30 3.70 3.15 0.85 1.70 0.70 0.05 0.35
Weight: 0.11 g
FOOT PRINT
CONDITIONS RGK = 1 KΩ B 200
VOLTAGE D 400 M 600 N 800
Unit V
VDRM VRRM
Jun - 02
元器件交易网
FS02...N
SURFACE MOUNT SCR
Electrical Characteristics
SYMBOL PARAMETER Gate Trigger Current Off-State Leakage Current On-state Voltage On-state Threshold Voltage Dinamic Resistance Gate Trigger Voltage Gate Non Trigger Voltage Holding Current Latching Current Critical Rate of Voltage Rise CONDITIONS MIN VD = 12 VDC , RL = 140Ω, Tj = 25 ºC MAX VD = VDRM , RGK = 1KΩ, Tj = 125 ºC MAX VR = VRRM , Tj = 25 ºC MAX at IT = 1.6 Amp, tp = 380 µs, Tj = 25 ºC MAX Tj = 125 ºC MAX Tj = 125 ºC MAX VD = 12 VDC , RL = 140Ω, Tj = 25 ºC MAX VD = VDRM , RL = 3.3KΩ, RGK = 1KΩ, MIN Tj = 125 ºC IT = 50 mA , RGK = 1KΩ, Tj = 25 ºC IG = 1 mA , RGK = 1KΩ, Tj = 25 ºC VD = 0.67 x VDRM , RGK = 1KΩ, Tj = 125 ºC MAX MAX MIN MIN 01 1 20 SENSITIVITY 04 15 50 02 200 500 5 1.45 0.9 150 0.8 0.1 5 6 15 15 50 25 60 10 20 03 20 200 Unit µA µA V V mΩ V V mA mA V/µs A/µs