8313配置文件及说明
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writereg MBAR 0xFF400000
writemem.l 0xFF400000 0xE0000000 # IMMRBAR = 0xE0000000
writereg MBAR 0xE0000000
writemem.l 0xE0000020 0xFE000000# LBLAWBAR0 - begining at 0xfe000000 writemem.l 0xE0000024 0x80000014# LBLAWAR0 - enable, size = 2MB
#writemem.l 0xE0000028 0xFA000000 # LBLAWBAR1 FPGAbegining at 0xfa000000
#writemem.l 0xE000002C 0x8000000E # LBLAWAR1 - enable, size = 32KB writemem.l 0xE00000A0 0x00000000 # DDRLAWBAR0 - begining at 0x00000000 writemem.l 0xE00000A4 0x80000018 # DDRLAWAR0 - enable, size = 32MB
# DDR Controller Configuration
#1 DDRCDR
writemem.l 0xE0000128 0x73040002
#CLK_CNTL
writemem.l 0xE0002130 0x02000000
#同原0x02000000。[5-7]CLK_ADJST = 010(1/2),or 011(3/4)
# CS0_BNDS
writemem.l 0xE0002000 0x00000001 # 0x00000001 - 0x01FFFFFF ;32MB
# CS0_CONFIG
# [8]AP_0_EN = 1,0?
# [16-17]BA_BITS_CS_0 = 00,01? Number of bank bits for SDRAM on chip select n.
# [21-23]ROW_BITS_CS_0 = b'001' ; 12 row bits
# [29-31]COL_BITS_CS_0 = b'010' ; 9 columns bits
#原0x80840102 不同:[29-31]、[21-23],
writemem.l 0xE0002080 0x80000001
# TIMING_CFG_3 原0x00000000
# 13-15EXT_REFREC = 001; AUTO REFRESH command period tRFC=72 ns writemem.l 0xE0002100 0x00010000
# TIMING_CFG_1 原0x26256222
# bit 1-3 = 2 tRP=15ns,(tck=7.5) (类似tRP ,为DDR芯片手册上内容)# bit 4-7 = 6 tRAS=42ns,
# bit 9-11 = 2 tRCD=15ns,
# bit 12 - 15 = 0011:2;0100:2.5
# bit 16 - 19 = 2 (10tck) tRFC=72 ns (tck=7.5)
# bit 21 - 23 = 2 tWR=15ns,
# bit 25 - 27 = 2 tRRD=12ns,
# bit 29 - 31 = 1 tWTR=1tck
writemem.l 0xE0002108 0x26232221
# TIMING_CFG_2 原0x0f9028c7
# bit 4-8 =11111 OR 00010 DQS read preamble tRPRE=0.9tck
# bit 16-18=100 010(BL=4) OR 100(BL=8)
# bit 19-21 = b'011' Write command to write data strobe timing adjustment # 3/4 DRAM clock delay
#Write command to first DQS latching transition tDQSS=0.75 writemem.l 0xE000210C 0x0F888C41
# TIMING_CFG_0 原0x00220802
# [9-11]ACT_PD_EXIT = b'001' ; 1 Clocks P46(MT46V8M16P_6T.pdf) # [13-15]PRE_PD_EXIT = b'001' ; 1 Clocks
# [28-31]MRS_CYC = b'0010'=2CLOCKS;tMRD=12
writemem.l 0xE0002104 0x00220002
# temporary disable DDR_SDRAM_CFG 原0x43080000
# [1]SREN = b'1'
# [3]RD_EN = b'0'
# [10]DYN_PWR = b'0'
# [11-12]DBW = b'01' DRAM data bus width:01=32bit,10=16bit # [13]8_BE = b'1' 0=4-beat bursts 1=8-beat bursts
#[14] NCAP = b'0' 0= support concurrent auto-precharge
# [16]2T_EN = b'0'
# [26]x32_EN = b'0'
# [27]PCHB8 = b'0'
# [28]HSE = b'0'
# [30]MEM_HALT = b'0'
# [31]BI = b'0'
writemem.l 0xE0002110 0x420C0000
# DDR_SDRAM_CFG_2 原0x00401000
# [0]FRC_SR = b'0'
# [2] DLL_RST_DIS = b'0'
# [16-19]NUM_PR = b'0001'
# [27]D_INIT = b'0' DRAM data initialization (or 1?!) writemem.l 0xE0002114 0x00001000
#DDR_SDRAM_MODE 原0x44400232
#[0-15] ESDMODE=4000
#[16-31] SDMODE=0023, Burst Length=8, CAS Latency=2 writemem.l 0xE0002118 0x40000023
# DDR_SDRAM_INTERV AL 原0x03200064
# [0-15]REFINT = 2600 Clocks,