FDS6912_0007中文资料

3
V mV/°C Ω
0.028 0.048 0.042
ID(on) gFS
VGS = 10 V, VDS = 10 V,
20 20
A S
Dynamic Characteristics
Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance
FDS6912 Rev E (W)
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FDS6912
Typical Characteristics (continued)
10 ID = 6.3A 8 15V 6 VDS = 5V 10V2000CAPACITANCE (pF)
1000 500
C iss
4
C oss
200 80
2
f = 1 MHz VGS = 0V
0.1 0.3 1 3 10
C rss
30
0 0 4 8 Qg, GATE CHARGE (nC) 12 16
V DS , DRAIN TO SOURCE VOLTAGE (V)
TA=25 C unless otherwise noted
o
Parameter
Ratings
30 ±25
(Note 1a)
Units
V V A W
6 20 2
Power Dissipation for Dual Operation Power Dissipation for Single Operation
0.8 0 10 20 30 40 50
ID, DRAIN CURRENT (A)
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with Drain Current and Gate Voltage.
8
1.6 1.5 DRAIN-SOURCE ON-RESISTANCE 1.4 1.3 1.2 1.1 1.0 0.9 0.8
TA = 25°C unless otherwise noted
Parameter
Drain–Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate–Body Leakage, Forward Gate–Body Leakage, Reverse
30
VGS = 10V
24 I , DRAIN-SOUR CE CURREN T (A)
6.0V 5.0V 4.5V
2 1.8 1.6 V GS = 4.0V
18
4.0V
12
1.4 1.2 1
4.5V 5.0V
3.5V
6.0V 7.0V 10V
D
6
3.0V
0 0 1 1 2 2 V DS, D RAIN-SOUR CE VOL TAGE (V) 3 3
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FDS6912
July 2000
FDS6912
Dual N-Channel Logic Level PWM Optimized PowerTrench MOSFET
General Description
These N-Channel Logic Level MOSFETs have been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency.
IS VSD Maximum Continuous Drain–Source Diode Forward Current Drain–Source Diode Forward Voltage VGS = 0 V, IS = 1.3 A
(Note 2)
1.3 0.75 1.2
A V
Notes: 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design.
a) 78°/W when 2 mounted on a 0.5in pad of 2 oz copper
b) 125°/W when mounted on a 0.02 2 in pad of 2 oz copper
c) 135°/W when mounted on a minimum mounting pad.
2000 Fairchild Semiconductor Corporation
FDS6912 Rev F (W)
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FDS6912
Electrical Characteristics
Symbol
BVDSS ∆BVDSS ∆TJ IDSS IGSSF IGSSR
D1 D1 D2 D2 S1 G1
5 6 7
Q1
4 3 2
Q2
SO-8
S2
8
1
G2
Absolute Maximum Ratings
Symbol
VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous – Pulsed
Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
FDS6912 Rev E (W)
元器件交易网
FDS6912
Typical Characteristics
100
VDS = 5V
I D , DRAIN CURRENT (A) 15
TJ = -55°C
25°C 125°C
10
VGS = 0V
TA = 125 C 1 25 C
o
o
10
0.1 0.01
-55 C
o
5
0.001 0.0001
0
0 1 2 3 4 V GS , GATE TO SOURCE VOLTAGE (V) 5
(Note 1a) (Note 1)
78 40
°C/W °C/W
Package Marking and Ordering Information
Device Marking FDS6912 Device FDS6912 Reel Size 13’’ Tape width 12mm Quantity 2500 units
1 2 4 V
GS
25 o C
6 ,GATE-SOURCE VOLTAGE (V) 8 10
Figure 3. On-Resistance Variation withTemperature.
20
Figure 4. On-Resistance Variation with Gate-to-Source Voltage.
Features
• 6 A, 30 V. RDS(ON) = 0.028 Ω @ VGS = 10 V RDS(ON) = 0.042 Ω @ VGS = 4.5 V.
• Optimized for use in switching DC/DC converters with PWM controllers • Very fast switching. • Low gate charge
Min
30
Typ
Max Units
V
Off Characteristics
20 1 10 100 –100 mV/°C µA nA nA
On Characteristics
VGS(th) ∆VGS(th) ∆TJ RDS(on)
Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain–Source On–Resistance On–State Drain Current Forward Transconductance
(Note 2)
Test Conditions
VGS = 0 V, ID = 250 µA ID = 250 µA, Referenced to 25°C VDS = 24 V, VGS = 25 V, VGS = –25 V VGS = 0 V TJ = 55°C VDS = 0 V VDS = 0 V