BC847A中文资料

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BC847贴片三极管规格书

μA
μA μA
fT
Cob
f=100MHz
VCB=10V,f=1MHz
4.5
pF
B,Jul,2013
Typical Characteristics
Static Characteristic
10
BC847
hFE —— IC
COMMON EMITTER VCE= 5V Ta=100℃
(mA)
8
COMMON EMITTER Ta=25℃ hFE DC CURRENT GAIN 20uA 18uA 16uA 14uA 12uA
TRANSISTOR (NPN) SOT-23
1. BASE 2. EMITTER
FEATURES Ideally suited for automatic insertion For Switching and AF Amplifier Applications MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
400
200 0.1
1
10
100
10 0.1
1
10
100
COLLECTOR CURREMT
IC
(mA)
COLLECTOR CURREMT
IC
(mA)
100
IC
COMMON EMITTER VCE=5V
——
VBE
500
fT
——
IC
(mA)
IC
T =1 00℃ a
10
TRANSITION FREQUENCY
100
Cob/Cib
——
VCB/VEB
f=1MHz IE=0/IC=0 Ta=25 ℃

BC847CT-TP;BC847AT-TP;BC847BT-TP;中文规格书,Datasheet资料

BC847AT, BT, CTNPNSurface Mount Small Signal Transistor150mWFeaturesx Epitaxial Die Constructionx Complementary PNP Type Available (BC857AT,BT,CT)x Ultra-Small Surface Mount Packageomp onents20736 Marilla Street Chatsworth! "# $ % ! "#Micro Commercial Components • Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information)• Epoxy meets UL 94 V-0 flammability ratingElectrical Characteristics @ 25к Unless Otherwise SpecifiedSymbol Parameter Min Ty p Max Units Test ConditionOFF CHARACTERISTICSh FE DC Current Gain (Note 2)Current Gain A B C 110 200 420---290520222450800--- V CE =5.0V, I C =2.0mAV CE(SAT)Collector-Emitter Saturation Voltage (Note 2)--- --- 250600mVI C =10mA, I B =0.5mAI C =100mA, I B =5.0mA V BE(SAT)Base-Emitter Saturation Voltage(Note 2) ---700900--- mVV BE(ON) Base-Emitter Voltage (Note 2) 580 ---660--- 700770mVV CE =5.0V, I C =2.0mAV CE =5.0V, I C =10mAI CBO I CBO Collector-Cutoff Current (Note 2) --------- --- 155.0nAµA V CB =30V, I E =0V CB =30V, T j =125кf TGain Bandwidth Product100 --- --- MHzV CE =5.0V, I C =10mA,f=100MHzC CBO Collector-Base Capacitance--- --- 4.5 pF V CB =10V, f=1.0MHzNFNoise Figure BC847BTBC847CT--- --- 104.0dBV CE =5V,R S =2.0Kohm,f=1.0MHz,BW=200HZNote: 2. Short duration pulse test used to minimize self-heating effect.BC847AT, BT, CTMicro Commercial ComponentsI C =10mA, I B =0.5mA I C =100mA, I B =5.0mAMicro Commercial ComponentsOrdering Information :Device PackingPart Number-T P Tape&Reel;3Kpcs/Reel***IMPORTANT NOTICE***Micro Commercial Components Corp. reserve s the right to make changes without further notice to any product herein to make corrections, modifications , enhancements , improvements , or other changes . Micro Commercial Components Corp . does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights ,nor the rights of others . The user of products in such applications shall assume all risks of such use and will agree to hold Micro Commercial Components Corp . and all the companies whose products are represented on our website, harmless against all damages.***LIFE SUPPORT***MCC's products are not authorized for use as critical components in life support devices or systems without the express writtenapproval of Micro Commercial Components Corporation.***CUSTOMER AWARENESS***Counterfeiting of semiconductor parts is a growing problem in the industry. Micro Commercial Components (MCC) is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. MCC strongly encourages customers to purchase MCC parts either directly from MCC or from Authorized MCC Distributors who are listed by country on our web page cited below. Products customers buy either from MCC directly or from Authorized MCC Distributors are genuine parts, have full traceability, meet MCC's quality standards for handling and storage. MCC will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. MCC is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors.分销商库存信息:MICRO-COMMERICAL-COBC847CT-TP BC847AT-TP BC847BT-TP。

BC847三极管

103
0 10−2
10−1
1
10
102 103 I C (mA)
BC847B; VCE = 5 V. (1) Tamb = 150 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C.
BC847B; VCE = 5 V. (1) Tamb = −55 °C. (2) Tamb = 25 °C. (3) Tamb = 150 °C.
VALUE 500
UNIT K/W
2002 Feb 04
3
Philips Semiconductors
Product speciﬁcation
NPN general purpose transistors
CHARACTERISTICS Tamb = 25 °C; unless otherwise speciﬁed. SYMBOL ICBO PARAMETER collector-base cut-off current CONDITIONS VCB = 30 V; IE = 0 VCB = 30 V; IE = 0; Tj = 150 °C IEBO hFE emitter-base cut-off current DC current gain BC846A; BC847A BC846B; BC847B; BC848B BC847C DC current gain BC846 BC847 BC846A; BC847A BC846B; BC847B; BC848B BC847C VCEsat collector-emitter saturation voltage IC = 10 mA; IB = 0.5 mA IC = 100 mA; IB = 5 mA; note 1 VBEsat base-emitter saturation voltage IC = 10 mA; IB = 0.5 mA IC = 100 mA; IB = 5 mA; note 1 VBE Cc fT F base-emitter voltage collector capacitance transition frequency noise ﬁgure IC = 2 mA; VCE = 5 V IC = 10 mA; VCE = 5 V VCB = 10 V; IE = Ie = 0; f = 1 MHz VCE = 5 V; IC = 10 mA; f = 100 MHz IC = 200 µA; VCE = 5 V; RS = 2 kΩ; f = 1 kHz; B = 200 Hz IC = 2 mA; VCE = 5 V VEB = 5 V; IC = 0 IC = 10 µA; VCE = 5 V

BC847BS;中文规格书,Datasheet资料

©2007 Fairchild Semiconductor Corporation BC847BS Rev. ABC847BSJune 2007BC847BSNPN Multi-chip General Purpose AmplifierThis device is designed for general purpose amplifier applications at collector currents to 200 mA.Sourced from Process 07.Absolute Maximum Ratings * T a= 25°C unless otherwise noted* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.NOTES :1) These ratings are based on a maximum junction temperature of 150 degrees C.2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.Thermal Characteristics * T a= 25°C unless otherwise noted*Device mounted on FR-4 PCB 1.6” X 1.6” X 0.06”.SymbolParameterValueUnitsV CBO Collector-Base Voltage 50V V CES Collector-Base Voltage 50V V CEO Collector-Emitter Voltage 45V V EBO Emitter-Base Voltage 6.0V I C Collector Current (DC)100mA T J, T STGJunction Temperature and Storage Temperature-55 ~ +150°CSymbolCharacteristicMaxUnitsP D Total Device Dissipation Derate above 25℃2101.6mW mW/℃R θJAThermal Resistance, Junction to Ambient625℃/WC1B2E1NOTE: The pinouts are symmetrical; pin 1 and pin4 are interchangeable. Units inside the carrier can be of either orientation and will not affect the functionality of the device.Pin #1 B1C2E2 SC70-6Mark: .1FDual NPN Signal TransisterBC847BS Rev. ABC847BSElectrical Characteristics * T a= 25°C unless otherwise notedOff CharacteristicsOn Characteristics* Pulse Test: Pulse Width ≤300μs, Duty Cycle ≤2%NOTE: All voltages (V) and currents (A) are negative polarity for PNP transistors.SymbolParameter Test Condition MIN MAX UnitsV (BR)CBO Collector-Emitter Breakdown Voltage I C = 10 μA, I E = 050V V (BR)CES Collector-Base Breakdown Voltage I C = 10 μA, I E = 050V V (BR)CEO Collector-Base Breakdown Voltage I C = 10 mA, I B = 045V V (BR)EBO Emitter-Base Breakdown Voltage I E = 10 μA, I C = 06.0V I CBOCollector-Cutoff CurrentV CB = 30 V, I E = 0V CB = 30 V, I E = 0, T A = 150°C155.0nA μAh FE DC Current GainI C = 2.0 mA, V CE = 5.0 V200450V CE(sat )Collector-Emitter Saturation Voltage *I C = 10 mA, I B = 0.5 mAI C = 100 mA, I B = 5.0 mA 0.250.65V V V BE(on )Emitter-Base Breakdown Voltage *I C = 2.0 mA, V CE = 5.0 V I C = 10 mA, V CE = 5.0 V0.580.70.77V VtmFAIRCHILD SEMICONDUCTOR TRADEMARKSThe following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.BC847BSDISCLAIMERFAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY , FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPE-CIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.LIFE SUPPORT POLICYFAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.As used herein:1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user.2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.PRODUCT STATUS DEFINITIONS Definition of TermsDatasheet IdentificationProduct StatusDefinitionAdvance InformationFormative or In DesignThis datasheet contains the design specifications for product development. Specifications may change in any manner without notice.Preliminary First ProductionThis datasheet contains preliminary data, andsupplementary data will be published at a later date.Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.No Identification Needed Full ProductionThis datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.Obsolete Not In ProductionThis datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor.The datasheet is printed for reference information only.FACT Quiet Series™GlobalOptoisolator™GTO™HiSeC™I 2C™i-Lo ™ImpliedDisconnect™IntelliMAX™ISOPLANAR™LittleFET™MICROCOUPLER™MicroFET™MicroPak™MICROWIRE™MSX™MSXPro™OCX™OCXPro™OPTOLOGIC ®OPTOPLANAR™PACMAN™POP™Power247™PowerEdge™PowerSaver™PowerTrench ®QFET ®QS™QT Optoelectronics™Quiet Series™RapidConfigure™RapidConnect™μSerDes™ScalarPump™SILENT SWITCHER ®SMART START™SPM™Stealth™SuperFET™SuperSOT™-3SuperSOT™-6SuperSOT™-8SyncFET™TCM™TinyBoost™TinyBuck™TinyPWM™TinyPower™TinyLogic ®TINYOPTO™TruTranslation™UHC ®UniFET™VCX™Wire™ACEx™ActiveArray™Bottomless™Build it Now™CoolFET™CROSSVOLT ™DOME™EcoSPARK™E 2CMOS™EnSigna™FACT ®FAST ®FASTr™FPS™FRFET™Across the board. Around the world.™The Power Franchise ®Programmable Active Droop™Rev. I233BC847BS Rev. A分销商库存信息: FAIRCHILDBC847BS。

BC847 规格书

[1] [2] [2] [2]
Conditions VCB = 30 V; IE = 0 A VCB = 30 V; IE = 0 A; Tj = 150 C VEB = 5 V; IC = 0 A VCE = 5 V; IC = 10 A
BC847_SER
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 8 — 20 August 2012
Table 2. Symbol VCEO IC hFE Quick reference data Parameter collector-emitter voltage collector current DC current gain hFE group A hFE group B hFE group C VCE = 5 V; IC = 2 mA Conditions open base Min 110 110 200 420 Typ 180 290 520 Max 45 100 800 220 450 800 Unit V mA
Table 5. BC847 BC847A BC847B BC847C BC847W BC847AW BC847BW BC847CW
[1]
Marking codes Marking code[1] 1H* 1E* 1F* 1G* 1H* 1E* 1F* 1G* Type number BC847T BC847AT BC847BT BC847CT BC847AM BC847BM BC847CM Marking code[1] 1N 1E 1F 1G D4 D5 D6

1F帖片三极管BC847BT

BC847ATT1, BC847BTT1, BC847CTT1General Purpose TransistorsNPN SiliconThese transistors are designed for general purpose amplifier applications. They are housed in the SC−75/SOT−416 package which is designed for low power surface mount applications.Features•Pb−Free Packages are Available*MAXIMUM RATINGS (T= 25°C)Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected.THERMAL CHARACTERISTICS1.FR−4 @ min pad.2.FR−4 @ 1.0 × 1.0 in pad.*For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.See detailed ordering and shipping information in the package dimensions section on page 5 of this data sheet.ORDERING INFORMATIONELECTRICAL CHARACTERISTICS (T= 25°C unless otherwise noted)ON CHARACTERISTICSSMALL−SIGNAL CHARACTERISTICS2.00.2Figure 3. Collector Saturation Region I B , BASE CURRENT (mA)Figure 4. Base−Emitter Temperature CoefficientI C , COLLECTOR CURRENT (mA)1.21.62.00.40.8h F E , N O R M A L I Z E D D C C U R R E N T G A I NV C E , C O L L E C T O R −E M I T T E R V O L T A G E (V )1.51.00.80.60.40.3BC847Figure 5. Normalized Thermal Response0.0010.010.11.0r (t ), N O R M A L I Z E D T R A N S I E N T T H E R M A L R E S I S T A N C Et, TIME (s)Figure 6. Capacitances VR , REVERSE VOLTAGE (VOLTS)100.40.6 1.010201.02.06.0407.05.03.02.0C , C A P A C I T A N C E (p F )0.8 4.08.0Figure 7. Current−Gain − Bandwidth ProductI C , COLLECTOR CURRENT (mAdc)80100200300400602040300.71.010202.050307.05.03.00.5f , C U R R E N T −G A I N − B A N D W I D T H P R O D U C T (M H z )TORDERING INFORMATION†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our T ape and Reel Packaging Specifi-cations Brochure, BRD8011/D.PACKAGE DIMENSIONSSC−75/SOT−416CASE 463−01ISSUE CON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.PUBLICATION ORDERING INFORMATION。

BC847B资料

-
90
-
-
150
-
-
270
-
HFE
220
-
110
180
200
290
450
420
520
800
Collector-Emitter Saturation Voltage ( IC= 10 mA, IB= 0.5 mA ) ( IC= 100 mA, IB= 5.0 mA )
Base-Emitter Saturation Voltage ( IC= 10 mA, IB= 0.5 mA ) ( IC= 100 mA, IB= 5.0 mA )
Zowie Technology Corporation
General Purpose Transistor
NPN Silicon
BC847A,B,C
MAXIMUM RATINGS Rating
Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current-Continuous
2.0 TA= 25oC
1.6
IC = 200 mA
IC = 100 mA IC = 50 mA
IC = 20 mA IC = 10 mA
1.2
0.8
0.4
0 0.02 0.05 0.1 0.2
0.5 1.0 2.0
5.0 10 20
IB, BASE CURRENT ( mA )
Figure 9. Collector Saturation Region
3
1 2
SOT-23
COLLECTOR 3

BC847BS 双极性NPN小信号传输器说明说明书

***LIFE SUPPORT***
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IC ICM PD
Rating 50 45 6 100 200 300
Unit V V V mA mA
mW
SOT-363
G
•
A H
BC M
Note: 1. Halogen free "Green” products are defined as those which contain <900ppm bromine,
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter Voltage Transition Frequency Output Capacitance
Symbol
V(BR)CBO V(BR)CEO V(BR)EBO
B 0.045 0.053 1.15 1.35
C 0.079 0.096 2.00 2.45
D
0.026
071 0.087 1.80 2.20
J ----- 0.004 ----- 0.10
K 0.031 0.043 0.80 1.10
L 0.010 0.018 0.26 0.46
TA=25°C
1000
TA=25°C TA=100°C

BC847AT-7-F中文资料

Symbol VCBO VCEO VEBO IC Pd RθJA
Tj, TSTG
Value 50 45 6.0 100 150 833
-55 to +150
Unit V V V mA
mW °C/W
°C
Electrical Characteristics @TA = 25°C unless otherwise specified
0.3
0.2
hFE, DC CURRENT GAIN
1,000
VCE = 5V TA = 100°C
TA = 25°C
100
TA = -50°C
10
1
0.01
0.1
1.0
10
100
IC, COLLECTOR CURRENT (mA)
Fig. 2, DC Current Gain vs Collector Current
Code UO are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.
DS30274 Rev. 9 - 2
1 of 3
BC847AT, BT, CT
Mechanical Data
• Case: SOT-523 • Case Material - Molded Plastic. UL Flammability
Classification Rating 94V-0 • Moisture Sensitivity: Level 1 per J-STD-020C • Terminals: Solderable per MIL-STD-202, Method 208 • Lead Free Plating (Matte Tin Finish annealed over

BC847L-C-AE3-R中文资料

UNISONIC TECHNOLOGIES CO., LTDBC846-BC850NPN SILICON TRANSISTORSWITCHING AND AMPLIFIER APPLICATIONFEATURES* Suitable for automatic insertion in thick and thin-film circuits.* Complement to BC856 … BC860BC846L/BC847L/BC848L/BC849L/BC850LORDERING INFORMATIONOrder NumberPin AssignmentNormalLead Free PlatingPackage1 2 3 PackingBC846-x-AE3-R BC846L-x-AE3-R SOT-23 E B C Tape Reel BC847-x-AE3-R BC847L-x-AE3-R SOT-23 E B C Tape Reel BC848-x-AE3-R BC848L-x-AE3-R SOT-23 E B C Tape Reel BC849-x-AE3-R BC849L-x-AE3-R SOT-23 E B C Tape Reel BC850-x-AE3-R BC850L-x-AE3-R SOT-23 E B C Tape Reel BC846-x-AL3-R BC846L-x-AL3-R SOT-323 E B C Tape Reel BC847-x-AL3-R BC847L-x-AL3-R SOT-323 E B C Tape Reel BC848-x-AL3-R BC848L-x-AL3-RSOT-323 EB C Tape Reel BC849-x-AL3-R BC849L-x-AL3-R SOT-323 E B C Tape Reel BC850-x-AL3-R BC850L-x-AL3-R SOT-323 E B C Tape ReelMARKINGFEABSOLUTE MAXIMUM RATING (Ta=25℃, unless otherwise specified)PARAMETER SYMBOL VALUE UNITBC846 80 VBC847 / BC85050 VCollector-Base Voltage BC848 / BC849V CBO 30 V BC846 65 VBC847 / BC85045 VCollector-Emitter Voltage BC848 / BC849V CEO 30 V BC846 / BC847 6 VEmitter-Base Voltage BC848 / BC849 / BC850V EBO5 VCollector Current (DC) Ic 100 mASOT-23 310 mWCollector Dissipation SOT-323 P D200 mWJunction Temperature T J +150 °C Storage Temperature T STG -40 ~ +150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.Absolute maximum ratings are stress ratings only and functional device operation is not implied.ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified)PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITCollector Cut-Off Current I CBO V CB =30V, I E =0 15nA DC Current Gain h FE V CE =5.0V, Ic=2.0mA 110 800Ic=10mA,I B =0.5mA 90 250mVCollector-Emitter Saturation Voltage V CE(SAT)Ic=100mA,I B =5.0mA 200 600mV Ic=10mA,I B =0.5mA 700 mVCollector-Base Saturation Voltage V BE(SAT)Ic=100mA,I B =5.0mA 900 mV V CE =5.0V,Ic=2.0mA 580 660 700mVBase-Emitter On Voltage V BE(ON)V CE =5.0V,Ic=10mA 720mV Current Gain Bandwidth Product f TV CE =5.0V,Ic=10mAf=100MHz300 MHz Output Capacitance Cob V CB =10V, I E =0, f=1.0MHz 3.5 6 pF Input Capacitance Cib V EB =0.5V, I C =0, f=1.0MHz 9 pFBC846/BC847/BC848 2 10dB BC849/BC850 1.2 4 dBBC849 1.4 4 dB Noise Figure BC850NFV CE =5V, Ic=200µA, f=1KHz, R G =2K Ω V CE =5V, I C =200µA, R G =2K Ω, f=30~15000Hz 1.4 3 dB CLASSIFICATION OF h FERANK A B CRANGE 110-220 200-450 420-800TYPICAL CHARACTERISTICS020*********Collector -Emitter Voltage, V CE (V)Static CharacteristicC o l l e c t o r C u r r e n t ,I C (m A )101001000DC Current GainD C C u r r e n t G a i n , h F ECollector Current , I C (mA)10100Base-Emitter Saturation Voltage Collector -Emitter Saturation Voltage S a t u r a t i o n V o l t a g e , V B E (S A T ), V C E (S A T ) (V )Collector Current , I C (mA)0.1110100Base-Emitter on VoltageC o l l e c t c u r r e n t , I C (m A )Base-Emitter Voltage, V BE (V)0.1110100Collector Output Capacitance C a p a c i t a n c e, C o b (p F )Collector-Base Voltage , V CB (V)110100C u r r e n t G a i n -B a n d w i d t h P r o d u c t , f T (M H z )Current Gain Bandwidth Product Collector Current , I C (mA)。

BC 847PN资料

NPN/PNP Silicon AF Transistor Array • For AF input stages and driver applications • High current gain• Low collector-emitter saturation voltage • Two (galvanic) internal isolated NPN/PNP Transistors in one packageTape loading orientationVPS05604631542EHA07177EHA07193123456W1s Direction of UnreelingTop View Marking on SOT-363 package (for example W1s)corresponds to pin 1 of devicePosition in tape: pin 1opposite of feed hole sideType Marking Pin Configuration PackageBC 847PN 1Ps1=E12=B13=C24=E25=B26=C1SOT-363Maximum Ratings ParameterValue Symbol Unit VCollector-emitter voltage V CEO 45Collector-base voltage 50V CBO Collector-emitter voltage V CES V 50V EBO V Emitter-base voltage 5mA DC collector current I C 100200Peak collector currentI CM Total power dissipation , T S = 115 °C mW P tot 250T j 150Junction temperature °C -65 (150)Storage temperatureT stgThermal Resistance Junction ambient 1)R thJA ≤275K/WJunction - soldering pointR thJS≤1401) Package mounted on pcb 40mm x 40mm x 1.5mm / 0.5cm 2 CuElectrical Characteristics at T A =25°C, unless otherwise specified Parameter Symbol ValuesUnitmin.typ.max.DC Characteristics per Transistor Collector-emitter breakdown voltage I C = 10 mA, I B = 0V-V (BR)CEO-45Collector-base breakdown voltage I C = 10 µA, I B = 0--V (BR)CBO50Collector-emitter breakdown voltage I C = 10 µA, V BE = 0V (BR)CES50V--Emitter-base breakdown voltage I E = 10 µA, I C = 0 --V (BR)EBO5Collector cutoff current V CB = 30 V, I E = 0 15nA -I CBO-µA Collector cutoff current V CB = 30 V, I E = 0 , T A = 150 °C --I CBO5h FE-200 -630 250290DC current gain 1) I C = 10 µA, V CE = 5 V I C = 2 mA, V CE = 5 V-mV300650Collector-emitter saturation voltage1) I C = 10 mA, I B = 0.5 mA I C = 100 mA, I B = 5 mA-- 90200V CEsat Base-emitter saturation voltage 1) I C = 10 mA, I B = 0.5 mA I C = 100 mA, I B = 5 mA 700900V BEsat -- --Base-emitter voltage 1) I C = 2 mA, V CE = 5 V I C = 10 mA, V CE = 5 VV BE(ON) 580- 660- 7508201) Pulse test: t < 300µs; D < 2%Electrical Characteristics at T A=25°C, unless otherwise specifiedParameter Symbol UnitValuesmin.typ.max.AC Characteristics per TransistorTransition frequencyI C = 20 mA, V CE = 5 V, f = 100 MHz--MHz250f T2C cbCollector-base capacitance V CB = 10 V, f = 1 MHz--pFEmitter-base capacitance V EB = 0.5 V, f = 1 MHz-10C eb-Short-circuit input impedance I C = 2 mA, V CE = 5 V, f = 1 kHz4.5kΩ-h11e--Open-circuit reverse voltage transf.ratio I C = 2 mA, V CE = 5 V, f = 1 kHz2-10-4 h12eShort-circuit forward current transf.ratio I C = 2 mA, V CE = 5 V, f = 1 kHz--330-h21eOpen-circuit output admittanceI C = 2 mA, V CE = 5 V, f = 1 kHzh22e-30-µSTotal power dissipation P tot = f (T A*;T S) * Package mounted on epoxymWPtotPermissible Pulse LoadP totmax / P totDC = f (t p)Ptotmax/PtotDCPermissible Pulse Load R thJS= f (t p)1010101010K/WRthJSCollector-base capacitance C CB = f (V CBO )Emitter-base capacitance C EB = f (V EBO )041051010EHP00361CB0C V62EB0V EBC 810pF 12CB0C -11C CB(()BC 846 (850))Transition frequency f T = f (I C )V CE= 5V10101010EHP00363f mAMHz -10125310102110555ΙCCollector cutoff current I CBO = f (T A )V CB = 30V10050100150EHP00381T A51010nA10Ι555101043210-1maxtypC Collector-emitter saturation voltage I C = f (V CEsat ), h FE = 20100EHP00367CEsat10mA1010210-155V 0.30.510025-500.10.20.4CC CDC current gain h FE = f (I C) V CE = 5Vh231010210551015Base-emitter saturation voltageI C = f (V BEsat), h FE = 2010EHP00364BEsatV0.6V 1.2-110010121055mA0.20.40.8C25100C-50Ch parameter h e = f (I C) normalizedV CE= 5V101010EHP00368mA-1015h210-110110100555h11eh12eh21eh22eV CE= 5 VΙCh parameter h e =f (V CE) normalizedI C = 2mA0102030EHP00369VCEhV1.00.51.52.0=2 mAhhhheeee21111222CΙ。

BC847B中文资料

IC = 10 mA, IB = 0.5 mA IC = 100 mA, IB = 5 mA
VBE(ON)
Base-emitter voltage1)
IC = 2 mA, VCE = 5 V IC = 10 mA, VCE = 5 V
1Pulse test: t < 300µs; D < 2%
580 -
元器件交易网
BC846...-BC850...
NPN Silicon AF Transistors • For AF input stages and driver applications • High cemitter saturation voltage • Low noise between 30 Hz and 15 kHz • Complementary types: BC856...-BC860...(PNP) • Pb-free (RoHS compliant) package 1) • Qualified according AEC Q101
IE = 0 , IC = 10 µA
-
Collector-base cutoff current
VCB = 45 V, IE = 0 VCB = 30 V, IE = 0 , TA = 150 °C
h FE
0.015 5 140 250 480 180 290 520
220 450 800 mV
DC current gain1)
IC = 10 mA, IB = 0 , BC846... IC = 10 mA, IB = 0 , BC847..., BC850... IC = 10 mA, IB = 0 , BC848..., BC849...

BC847AWT1G;BC847CWT3G;BC847CWT1G;BC848BWT1G;BC848CWT1G;中文规格书,Datasheet资料

Base −Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA) Base −Emitter Saturation Voltage (IC = 100 mA, IB = 5.0 mA)
Base −Emitter Voltage (IC = 2.0 mA, VCE = 5.0 V) Base −Emitter Voltage (IC = 10 mA, VCE = 5.0 V)
1.2
1.6
2.0
2.4
2.8
0 0.02
0.1
1.0
IB, BASE CURRENT (mA)
10 20
Figure 5. Collector Saturation Region
0.2
1.0
10
100
IC, COLLECTOR CURRENT (mA)
Figure 6. Base−Emitter Temperature Coefficient
Features
• AEC−Q101 Qualified and PPAP Capable • S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic OFF CHARACTERISTICS Collector −Emitter Breakdown Voltage

NXP-BC847系列中文资料

45 V, 100 mA NPN general-purpose transistors
Type number[1]
Marking code[2]
BC847
1H*
BC847A
1E*
BC847B
1F*
BC847B/DG
*BC
BC847C
1G*
BC847W
1H*
BC847AW
1E*
BC847BW
1F*
BC847BW/DG
G9*
BC847CW
1G*
BC847T
1N
[1] /DG: halogen-free
2 of 15
NXP Semiconductors
BC847/BC547 series
45 V, 100 mA NPN general-purpose transistors
Table 3. Pin SOT54 1 2 3
Pinning …continued Description
emitter base collector
BC547C[2]
[1] /DG: halogen-free [2] Also available in SOT54 and SOT54 variant packages (see Section 2 and Section 9).
Version SOT416
SOT883 SOT54
Table 5. Marking codes
SOT54A 1 2 3
emitter base collector
SOT54 variant
1
emitter
2
base
3
collector

BC847B;中文规格书,Datasheet资料

BC847B BC847CSMALL SIGNAL NPN TRANSISTORSPRELIMINARY DATAs SILICON EPITAXIAL PLANAR NPNTRANSISTORSs MINIATURE SOT-23 PLASTIC PACKAGE FOR SURFACE MOUNTING CIRCUITS s TAPE AND REEL PACKINGsBC847B - THE PNP COMPLEMENTARY TYPE IS BC857BAPPLICATIONS s WELL SUITABLE FOR PORTABLE EQUIPMENTs SMALL LOAD SWITCH TRANSISTORS WITH HIGH GAIN AND LOW SATURATION VOLTAGE®June 2002ABSOLUTE MAXIMUM RATINGS1/4t e P r o d u c t (s ) - O b s o l e t e P r o d u c t (s ) -Ob s o l eTHERMAL DATAELECTRICAL CHARACTERISTICS (T case = 25 o C unless otherwise specified)BC847B / BC847CBC847B / BC847COb s o l e t e P r o d uc t (s ) - O b s o l e t e P r od u c t (s ) Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.The ST logo is a trademark of STMicroelectronics© 2002 STMicroelectronics – Printed in Italy – All Rights ReservedSTMicroelectronics GROUP OF COMPANIESAustralia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States.BC847B / BC847CO b s o l e t e P r o d u c t (s ) - O b s o l e t e P r o d u c t (s )分销商库存信息: STMBC847B。

FOSAN富信电子三极管 BC846 BC847 BC848-产品规格书

安徽富信半导体科技有限公司ANHUI FOSAN SEMICONDUCTOR TECHNOLOGY CO.,LTD.BC846/BC847/BC848 SOT-23Bipolar Transistor双极型三极管▉Features特点NPN General Purpose通用▉Absolute Maximum Ratings最大额定值Characteristic 特性参数Symbol符号BC846A/B/CBC847A/B/CBC848A/B/CUnit单位Collector-Base Voltage集电极基极电压V CBO805030VCollector-Emitter Voltage 集电极发射极电压V CEO654530VEmitter-Base Voltage发射极基极电压V EBO665V Collector Current集电极电流I C100mA Power dissipation耗散功率P C(T a=25℃)200mWThermal ResistanceJunction-Ambient热阻RΘJA625℃/W Junction and Storage Temperature结温和储藏温度T J,T stg-55to+150℃■Device Marking产品打标H FE110-220(A)200-450(B)420-800(C)Mark BC8461A1B1C BC8471E1F1G BC8481J1K1LANHUI FOSAN SEMICONDUCTOR TECHNOLOGY CO.,LTD.BC846/BC847/BC848■ElectricalCharacteristics 电特性(T A =25℃unless otherwise noted 如无特殊说明，温度为25℃)Characteristic 特性参数Symbol 符号Min 最小值Type 典型值Max 最大值Unit 单位Collector-Base Breakdown Voltage集电极基极击穿电压(I C =10uA ，I E =0)BC846A/B/C BC847A/B/C BC848A/B/C BV CBO805030——VCollector-Emitter Breakdown Voltage集电极发射极击穿电压(I C =10mA ，I B =0)BC846A/B/C BC847A/B/C BC848A/B/CBV CEO 654530——VEmitter-Base Breakdown V oltage 发射极基极击穿电压(I E =10uA ，I C =0)BV EBO 5——VCollector-Base Leakage Current集电极基极漏电流BC846A/B/C(V CB =70V ,I E =0)BC847A/B/C(V CB =50V ,I E =0)BC848A/B/C(V CB =30V ,I E =0)I CBO ——100nAEmitter-Base Leakage Current 发射极基极漏电流(V EB =5V ，I C =0)I EBO ——100nADC Current Gain 直流电流增益(V CE =5V,I C =2mA)BC846A/BC847A/BC848A BC846B/BC847B/BC848B BC846C/BC847C/BC848CH FE110200420180290520220450800Collector-Emitter Saturation Voltage 集电极发射极饱和压降(I C =100mA ，I B =5mA)V CE(sat)——0.5VBase-Emitter Saturation V oltage 基极发射极饱和压降(I C =100mA ，I B =5mA)V BE(sat)—— 1.1V Transition Frequency 特征频率(V CE =5V ，I C =10mA)f T100——MH ZOutput Capacitance 输出电容(V CB =10V ，I E =0,f=1MH Z )C ob— 4.5—pFANHUI FOSAN SEMICONDUCTOR TECHNOLOGY CO.,LTD.BC846/BC847/BC848■Typical Characteristic Curve典型特性曲线ANHUI FOSAN SEMICONDUCTOR TECHNOLOGY CO.,LTD.BC846/BC847/BC848■Dimension外形封装尺寸Symbol Dimensions In Millimeters Dimensions In Inches Min Max Min Max A 0.900 1.1500.0350.045A10.0000.1000.0000.004A20.900 1.0500.0350.041b 0.3000.5000.0120.020c 0.0800.1500.0030.006D 2.800 3.0000.1100.118E 1.200 1.4000.0500.055E1 2.2502.5500.0890.100e 0.950TYP0.037TYPe1 1.8002.0000.0710.079L 0.550REF0.022REFL10.3000.5000.0120.020θ0o8o 0o8o。