SCH2815中文资料

0 1.0 1.5 2.0 2.5 3.0 3.5 IT07511
Drain-to-Source Voltage, VDS -- V
5.0
IT07510
RDS(on) -- VGS
Gate-to-Source Voltage, VGS -- V
1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 --60
[MOSFET]
trr Test Circuit
[SBD]
VIN 4V 0V VIN PW=10µs D.C.≤1%
VDD=15V
Duty≤10% 10mA 1mA trr
ID=350mA RL=42Ω
10µs
G
--5V
SCH2815 P.G 50Ω
S
0.4
ID -- VDS
V 3.0
V 2.5
2.0 V
Parameter [MOSFET] Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain “Miller” Charge Diode Forward Voltage [SBD] Reverse Voltage Forward Voltage Reverse Current Interterminal Capacitance Reverse Recovery Time VR VF 1 VF 2 IR C trr IR=0.5mA IF=100mA IF=150mA VR=6V VR=10V, f=1MHz IF=IR=10mA, See specified Test Circuit. 15 0.32 0.35 9 10 0.35 0.40 45 V V V µA pF ns V(BR)DSS IDSS IGSS VGS(off) yfs RDS(on)1 RDS(on)2 RDS(on)3 Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD ID=1mA, VGS=0V VDS=30V, VGS=0V VGS=8V, VDS=0V VDS=10V, ID=100µA VDS=10V, ID=350mA ID=350mA, VGS=4V ID=200mA, VGS=2.5V ID=10mA, VGS=1.5V VDS=10V, f=1MHz VDS=10V, f=1MHz VDS=10V, f=1MHz See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. VDS=10V, VGS=4V, ID=0.7A VDS=10V, VGS=4V, ID=0.7A VDS=10V, VGS=4V, ID=0.7A IS=0.7A, VGS=0V 30 1 1 0.4 0.45 0.8 0.7 0.8 1.6 30 7 3.5 8 6 10 8 1 0.4 0.2 0.93 1.2 0.9 1.15 2.4 1.3 V µA µA V S Ω Ω Ω pF pF pF ns ns ns ns nC nC nC V Symbol Conditions Ratings min typ max Unit
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
91306PE MS IM TC-00000165 No. A0369-1/6
元器件交易网
SCH2815
Electrical Characteristics at Ta=25°C
Top view
0.05
1
2 3 0.5
0.56
1
2
3
1 : Gate 2 : Source 3 : Anode 4 : Cathode 5 : Drain 6 : Drain SANYO : SCH6
0.25
No. A0369-2/6
元器件交易网
SCH2815
Switching Time Test Circuit
2
1.0 7 5 3 2
Source Current, IS -- A
ID=200mA
1.0
0 0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0
--40
--20
0
Ta= 7
RDS(on) -- Ta
5°C --25 °C
20
40
60
25° C
80 100
0.3
0.6
75°
C
120
140
Gate-to-Source Voltage, VGS -- V
IT10876
Package Dimensions
unit : mm (typ) 7028-003
Electrical Connection
6
1.6
0.05
5
4
0.2
6 5 4
0.2
1.6
1.5
1 : Gate 2 : Source 3 : Anode 4 : Cathode 5 : Drain 6 : Drain
Ambient Temperature, Ta -- °C
IT10877

No. A0369-3/6
元器件交易网
SCH2815
3
yfs -- ID
VDS=10V
3 2 1.0
IS -- VSD
VGS=0V
Forward Transfer Admittance, yfs -- S
元器件交易网
Ordering number : ENA0369
SCH2815
SANYO Semiconductors
DATA SHEET
SCH2815
Features
• •
MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode
25° C
Ta=25°C
Static Drain-to-Source On-State Resistance, RDS(on) -- Ω
4.0
Static Drain-to-Source On-State Resistance, RDS(on) -- Ω
3.0
350mA
2.0
=2.5V VGS mA, 0 0 2 I D= 4.0V V S= 0mA, G 5 3 = ID
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter [MOSFET] Drain-to-Source Voltage Gate-to-Source Voltage (*1) Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature [SBD] Repetitive Peak Reverse Voltage Nonrepetitive Peak Reverse Surge Voltage Average Output Current Surge Forward Current Junction Temperature Storage Temperature VRRM VRSM IO IFSM Tj Tstg 50Hz sine wave, 1 cycle 15 15 150 2 --55 to +125 --55 to +125 V V mA A °C °C VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Mounted on a ceramic board (900mm2!0.8mm) 1unit 30 10 0.7 2.8 0.6 150 --55 to +125 V V A A W °C °C Symbol Conditions Ratings Unit
Marking : QQ (*1) : Note, when designing a circuit using this product, that it has a gate (oxide film) protection diode connected only between its gate and source.
General-Purpose Switching Device Applications
•
Composite type with an N-channel silicon MOSFET and a Schottky barrier diode contained in one package facilitating high-density mounting. [MOSFET] • 1.5V drive. [SBD] • Short reverse recovery time. • Low forward voltage.