Si8410
Si841x-2x
1. Electrical Specifications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .4 2. Typical Performance Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 3. Application Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23 3.1. Theory of Operation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23 3.2. Eye Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24 3.3. Layout Recommendations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25 4. Pin Descriptions (Wide-Body SOIC) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27 5. Pin Descriptions (Narrow-Body SOIC) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28 6. Ordering Guide . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29 7. Package Outline: 16-Pin Wide Body SOIC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31 8. Landing Pattern: 16-Pin Wide-Body SOIC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32 9. Package Outline: 8-Pin Narrow Body SOIC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .33 10. Landing Pattern: 8-Pin Narrow Body SOIC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 34 11. Top Marking: 16-Pin Wide Body SOIC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .35 12. Top Marking: 8-Pin Narrow-Body SOIC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36 Contact Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .38
SI8421中文资料
Applications
Isolated switch mode supplies Isolated ADC, DAC
Motor control Power factor correction systems
Safety Regulatory Approvals
UL recognition:2500 Vrms for 1 Minute per UL1577 CSA component acceptance notice
—
9
12
Si8421-A,-B,-C, VDD2
All inputs 0 DC
—
9
12
Si8421-A,-B,-C, VDD1
All inputs 1 DC
—
10
14
Si8421-A,-B,-C, VDD2
All inputs 1 DC
—
10
14
10 Mbps Supply Current (All inputs = 5 MHz square wave, CI = 15 pF on all outputs)
3.1. Theory of Operation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 3.2. Eye Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 4. Layout Recommendations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 4.1. Supply Bypass . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 4.2. Input and Output Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 4.3. RF Radiated Emissions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 4.4. RF Immunity and Common Mode Transient Immunity . . . . . . . . . . . . . . . . . . . . . . . 22 5. Pin Descriptions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23 6. Ordering Guide . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24 7. Package Outline: 8-Pin SOIC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25 Contact Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .26
SI8420-B-IS中文资料
Preliminary Rev. 0.1
3
元器件交易网
Si8410/20/21
1. Electrical Specifications
Table 1. Electrical Characteristics
(VDD1 = 5 V, VDD2 = 5 V, TA = –40 to 125 ºC)
—
7
10
Si8420-A,-B,-C, VDD2
All inputs 0 DC
—
4
7
Si8420-A,-B,-C, VDD1
All inputs 1 DC
—
11
15
Si8420-A,-B,-C, VDD2
All inputs 1 DC
—
4
6
Si8421-A,-B,-C, VDD1
All inputs 0 DC
>25 kV/µs DC correct No start-up initialization required <10 µs Startup Time High temperature operation
125 °C at 100 Mbps 100 °C at 150 Mbps Narrow body SOIC-8 package
元器件交易网
Si8410/20/21
2
Preliminary Rev. 0.1
元器件交易网
TABLE OF CONTENTS
Si8410/20/21
Section
Page
1. Electrical Specifications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .4 2. Typical Performance Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 3. Application Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
AMT8410中文资料
AMT84102.5 Gb/s 1310/1550nm PIN-TIAPRELIMINARY DATA SHEET - Rev 1.1FEATURES• 2.5 Gb/s Differential Output TIA • 3.3 V Operation•Automatic Gain Control•55 µm 1270-1560 nm PIN Photodetector •2000 MHz Bandwidth•-23 dBm Typical Sensitivity •+2 dBm Optical Overload •TO-46 Lens PackageAPPLICATIONS•SONET OC-48/SDH STM-16 (2.488 Gb/s)• 2 x Fibre Channel (2.125 Gb/s)•2.5 Gb/s InfinibandPRODUCT DESCRIPTIONThe ANADIGICS AMT8410, packaged in a TO46lens can, is a 3.3 V integrated photodetector and transimpedance amplifier (TIA) used to convert a long wavelength (1270 to 1560 nm) input optical signal into a differential output voltage. TheAMT8410 has a bandwidth of 2000 MHz and a dynamic range of 25 dB. These devices are readily designed into receivers, transceivers and transponders for SONET, Fibre Channel and Infiniband applications.Figure 1: Funtional Block DiagramAMT84101Figure 2: T46L Pinout (Bottom View)Table 1: Pin DescriptionAMT8410ELECTRICAL CHARACTERISTICSTable 2: Absolute Maximum Ratings Stresses in excess of the absolute ratings may cause permanent damage. Functional operation is not implied under these conditions. Exposure to absolute ratings for extended periods of time may adversely affect reliability.V C C V 0.6P N I mB d 4+T SC°521o t C °56-.p m e T e g a r o t STable 3: Electrical Specifications(1)Measured at -17 dBm optical input power with output connected into R L = 100 Ω(differential).(2)Measured at 10-10 BER with a 223-1 PRBS at 2.5 Gb/s.(3)Measured with a 223-1 PRBS at 2.5Gb/s, an input optical power of -17dBm andR L = 100 Ω (differential).(4)Measured with a 223-1 PRBS at 2.5Gb/s, an input optical power of -3dBm andR L = 100 Ω (differential).(5)6σ about the center eye crossing.AMT8410PERFORMANCE DATAFigure 7:Differential Responsivity vs.CaseTemperature102030405060708090Case Temperature (C)D i f f e r e n t i a l R e s p o n s i v i t y (V /W )102030405060708090Case Tem perature (C)S e n s i t i v i t y (d B m )Figure 8:Sensitivity vs.CaseTemperature40.045.050.055.060.065.070.075.080.0102030405060708090Case Temperature (C)S u p p l y C u r r e n t (m A )P i n =-17d B mFigure 5:Supply Current vs.Case TemperatureFigure 6:Bandwidth vs.CaseTemperature1600170018001900200021002200230024000102030405060708090Case Temperature (C)B a n d w i d t h (M H z )Figure 3:Eye Diagram with an Optical InputPower of -23dBm100ps/Div.5mV/Div.AMT8410Figure 9: Test Setup for Frequency MeasurementsBERTFigure 11: Test Setup for Eye MeasurementsAMT8410V OUTV OUTFigure 12: DUT Test Fixture SchematicAMT8410 PACKAGE OUTLINEFigure 13: T46L Package Outline DiagramAMT8410ORDERING INFORMATIONANADIGICS, Inc.141 Mount Bethel RoadWarren, New Jersey 07059, U.S.A.Tel: +1 (908) 668-5000Fax: +1 (908) 668-5132URL: E-mail: Mktg@IMPORTANT NOTICEANADIGICS, Inc. reserves the right to make changes to its products or to discontinue any product at any time without notice. The product specifications contained in Advanced Product Information sheets and Preliminary Data Sheets are subject to change prior to a product’s formal introduction. Information in Data Sheets have been carefully checked and are assumed to be reliable; however, ANADIGICS assumes no responsibilities for inaccuracies. ANADIGICS strongly urges customers to verify that the information they are using is current before placing orders.WARNINGANADIGICS products are not intended for use in life support appliances, devices or systems. Use of an ANADIGICS product in any such application without written consent is prohibited.。
ISO工业润滑油粘度分类
ISO工业润滑油粘度分类cst:厘斯mm2/s:每秒平方毫米美国汽车工程师协会(SAE)发动机油粘度等级分类SF 用于1980年机型性能较SE为佳,同时改进了抗磨性。
SG 用于1989年机型抑制发动机沉积、机油氧化,减少发动机磨损,降低低温油泥的生成。
SH 用于1993年机型测试通过程序较SG严格,挥发性低,过滤性更佳。
SJ 用于1996年机型在SH的基础上增加台架测试和模拟试验,并改善挥发性。
EC 节能型。
柴油发动机润滑油CA 用于轻负荷机型与高质量燃料一并使用,具有防腐蚀性能。
CB 用于中负荷1949年机型与质量较差的燃料一并使用,具有防腐、减少沉积物功能。
CC 用于中负荷1961年机型用于轻负荷的涡轮增压柴油机,防止高温或低温沉积,防止锈蚀和腐蚀。
CD 用于重负荷1955年机型用于重负荷的涡轮增压柴油机,有效减小磨损及防止沉积物生成。
CD-Ⅱ用于重负荷(二冲程)1985年机型用于二冲程发动机,有效控制磨损和沉积物。
CE 用于重负荷1983年机型用于高速、高负荷的涡轮增压发动机。
CF 用于1994年机型适用于各类发动机,尤其是间接喷油柴油发动机。
CF-2 (二冲程)1994年机型用于重负荷适用于重负荷二冲程发动机。
有效防止磨损、粘环及沉积物生成。
CF-4 用于1990年机型适用于公路重型卡车发动机和工程机械发动机,有效降低油耗及沉积物的生成。
CG-4 用于1994年机型适用于重负荷公路卡车发动机及工地设备发动机(仅用于低硫柴油)。
美国石油学会(API)车用齿轮油质量等级APIGL-1此类油指定用于低齿面压力及低滑动速度的温和情况下使用的汽车螺旋伞齿轮、涡轮后桥及一些手动传动箱的润滑。
在这个情况下可以使用纯矿物油,而且表现令人满意。
抗氧剂、防锈剂、消泡剂及降凝剂可以用作改进其性能,可是摩擦改进剂及极压添加剂则不适宜使用。
此类油指定用于在较为苛刻的情况下运作的手动传动箱及螺旋齿轮后桥的润滑。
需要润滑油的负荷能力高于的要求。
烽火设备基础资料
780BNMU单盘硬件
面板指示灯含义
指示灯 ACT
UA/NUA NET SBUS MBUS
DCC指示灯
指示灯状态
备注
长亮但不闪烁表示 NMU盘未得到正确的配置 或时间;正常工作时,均 匀闪烁。
★ MBS1 MBUS1口通讯状态指示.闪动表示该口收到数据,本设备对外有6个MBUS1
口并联使用,可将其它功能模块(框、架)纳入到本设备进行管理
★ MBS2 MBUS2口通讯状态指示 闪动表示该口收到数据
★ DCCw 西DCC接收指示
闪动表示该口收到数据
★ DCCe 东DCC接收指示
闪动表示该口收到数据
6 6 611 3 3 322
EEEEEE 111111 ︱︱︱︱︱︱
666666 333333
123
456789
00 01 02 03 04 05 06 0 0 09 0 0 0 0 0 0F
11
78
ABCDE
风扇及分纤单元
OO
TTAAO 0
OO
25 25
U U U U 15 15
25 25
00 00
★ SBUS BCT应答指示 均匀闪动表示BCT与EMU通讯正常,不闪动表示
EMU未收到BCT应答,闪动频度不均匀表示可能有BCT通讯不好
★ NET F口数据指示灯 该灯以一定的频率闪动表示F口有数据收发
★ DCC0~3 从CPU串行口1~4指示灯 闪动表示该口收到数据
GF155-03BEMU单盘说明
❖ 可对某站点的光/电分支设备进行管理,;
国际通用表面处理标准对比
国际通用表面处理标准对比描述SSPC SP SIS 055900 NACE ISO 8501BS 7079溶剂清洗 SP1手工工具清洁SP2 St2 St2机动工具清洁SP3 St3 St3燃烧清洁 SP4 F1 喷砂处理白金属SP5 Sa3 No1 Sa3喷砂处理商用级SP6 Sa2 No3 Sa2喷砂处理普通级SP7 Sa1 No4 Sa1化学清洁 SP8喷砂处理近白金属SP9 Sa2.5 No2 Sa2.5机动清洁裸金属 SP10湿喷砂 SP11 No5钢结构油漆委员会Steel Structure Painting Council (SSPC)国家防腐工程师协会National Association of Corrosion Engineers (NACE)英国标准ISO 8501-1 / BSI BS 7079瑞典标准 Swedish Standard国标GB-3092 / GB-8923-88金属防腐涂装表面处理通常金属表面会附有尘埃、油污、氧化皮、锈蚀层、污染物、盐份或松脱的旧漆膜。
其中氧化皮是比较常见但最容易被忽略的部分。
氧化皮是在钢铁高温锻压成型时所产生的一层致密氧化层,通常附着比较牢固,但相比钢铁本身则较脆,并且其本身为阴极,会加速金属腐蚀。
如果不清除这些物质直接涂装,势必会影响整个涂层的附着力及防腐能力。
据统计,大约有70%以上的油漆问题是由于不适当的表面处理所引起的。
因此,对于一个金属防腐涂装油漆系统的性能体现,合适的表面处理是至关重要的。
通常我们按三个步骤进行表面处理:a) 铲除各种松脱物质;b) 溶剂清洗除去油脂;c) 使用各种手工或电动工具或喷砂等方法处理表面至上漆标准。
在附录A中,列出了SSPC表面处理标准。
在决定表面处理等级标准前,还需界定表面锈蚀等级。
在附录B中,我们列出了各锈蚀等级及喷砂处理后的图片。
在附录C中,还列出了各不同国际组织表面处理标准的相关联系。
Si501 si502 SI503 SI504 DATASHEET
Ordering part number must be entered at /cmems or using a Field Programmer Board. See /cmems or the data sheets for additional configuration options. Silicon Labs 3.2 x 5 mm package is delivered as 3.2 x 4 mm and accommodates industry-standard 3.2 x 5 mm footprint. Indicates MAXIMUM anticipated required frequency. Select "A" for max frequency < 80 MHz. Select "B" for max frequency > 80 MHz.
Pin Description
Pin Number 1 2 3 4
Description
Single frequency Dual frequency Quad frequency Programmable for any supported frequency or configuration
Pin 2 GND
LVCMOS CMEMS Programmable Oscillators Selected Electrical Specifications
Parameter Frequency Range Supply Voltage Supply Current Static Supply Current Frequency Stability 1 CMOS Rise/Fall Time2, 3 Cycle-to-Cycle Jitter Period Jitter Pk-Pk Period Jitter Phase Jitter4 Duty Cycle
模具钢、工具钢规格特性对照
0.50-0.55 0.15-0.35 0.70-0.9
HP-4A 塑 料 模 HP-4MA 具 钢 HAM-70
2311
HOLDEX
2738
718
SNCM 优 预硬化表 化 DAIDO NAK80 SUS420J2 优化 SKD61 面 HS41-47 预硬化表 面 HSC37-41 退火 HRC23-55 退火 HB≤229 退火 HB≤229
-
-
HEMS-1A 热 作 工 具 钢 冷 作 工 STD-11 具 钢 锻 造 用 工 具 钢 火 焰 硬 化 钢 HFH-1 STF-4M HDS-1
2083ESR S-136-S-136H
STD-61
2344
8407
1000-1050 550-680℃ 压铸模具, 热压模挤压 空冷,油冷 HRC≤53 1000-1050 550-680℃ 真空,煤气 HRC≤53 模
H13 2344 优 优化 化
-
SKD61 优 化
压铸模具,热压模
D2 优化
2379
XW42
SKD11 优 化
退火 HB≤225
1000-1050 550-680℃ 修边模, 成型模 冲模, 空冷,油冷 HRC≥58 热压模
6F2 优化
-
-
SKT4 优化
预硬化 HRC42-48
高清净度,良好的 0.49-0.54 0.20-0.3 0.95-1.05 1.95-2.1 0.95-1.1 0.45-0.55 抗热冲击性和抗磨 损性 锻模 热压模
-
-
-
HITACHI HMD5
退火 HB≤225
火焰表面硬化处 0.70-0.8 0.90-1.05 0.70-0.8 ≤0.15 1.00-1.1 0.20-0.25 理,良好的抗磨损 性和加工性
Si4840 44-A10 广播模拟调谐数字显示调幅 调频 短波无线电接收芯片说明书
Rev. 1.0 8/11Copyright © 2011 by Silicon Laboratories Si4840/44-A10特征应用描述Si4840/44是第一代模拟调谐数字显示CMOS 调幅/调频/短波无线电接收器集成电路,集成了从天线输入到音频输出的完整接收器功能。
芯片保持了模拟调谐功能的同时,与主机 MCU 一起工作,在 LED 上可以显示频率、立体声/单声道等信息。
借助Silicon Lab 已证实并享有专利的数字低中频接收器架构,Si4840/44提供 了卓越的射频性能和抗干扰能力。
集成于Si4840/44中的优越控制算法提供了方便和可靠的控制接口,同时消除了传统解决方案中手动调谐外部元件的缺点。
功能框图⏹ 支持全球FM 波段 (64–109 MHz)⏹支持全球AM 波段 (504–1750 kHz)⏹支持SW 波段 (Si4844 独有)(2.3–28.5 MHz)⏹可选择支持所有AM/FM 区域波段⏹2线控制接口⏹单声道/立体声,及有效台指示⏹数字音量支持⏹低音/高音支持⏹无需手动调整的最小BOM 组件⏹卓越的真实世界性能⏹自动频率控制(AFC) ⏹依据EN55020标准⏹ 2.0 to 3.6 V 电源电压(T = 25 °C),可用两节AAA 电池供电⏹支持广泛的铁氧体棒和空气环天线 ⏹24引脚的SSOP 外形封装⏹依据RoHS 标准⏹便携式收音机⏹立体声收音机⏹小型/微型系统⏹收录机⏹时钟收音机⏹消费类电子产品的模块⏹娱乐系统⏹玩具,灯具及任何需要 AM/FM 无线电的应用⏹迷你影响⏹iPod/iPhone 底座系统该产品的功能和/或架构涵盖于以下一个或多个专利,以及国内外正申请和发布的其他专利中: 7,127,217; 7,272,373;7,272,375; 7,321,324; 7,355,476; 7,426,376; 7,471,940; 7,339,503; 7,339,504.订购信息:See page 19.Si4840/44-A10Si4840/44-A10Rev. 1.03目录表SectionPage1. 电器规范 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .42. 典型应用电路图 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .113. 材料清单 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .124. 功能描述 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .134.1 概述 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .134.2 FM 接收器 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .144.3 AM 接收器 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .144.4 SW 接收器 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .144.5 频率调谐 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .144.6 波段选择 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .144.7 低音和高音 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .144.8 音量控制 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .144.9 立体声处理 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .154.10 立体声数模转换 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .154.11 软静音 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .154.12 参考时钟 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .154.13 记忆状态 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .154.14 命令编程 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .155. 命令及属性 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .166. 引脚描述 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .186.1 Si4840/44-A10 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .187. 订购指南 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .198. 封装外形: Si4840/44-A10 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .209. PCB 封装格式: Si4840/44-A10 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2110. 封装标识(顶部标识) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2210.1 Si4840/44-A10 顶部标识 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2211. 附加的参考资源 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .23版本更新变更列表 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .25联系信息 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26Si4840/44-A101. 电器规范表1. 推荐工作环境1,2参数符号测试环境最小值典型值最大值单位电源电压3V DD2— 3.6V 电源上电时间V DDRISE10——µs 备注:1.除非另有说明,数据表中的典型值适用于V DD= 3.3 V 和 25 °C环境。
钢的临界温度参考值(第7版)
钢的临界温度参考值(第7版)东北特殊钢集团徐效谦整理钢的临界温度参考值(第6版) 单位:℃注:1.钢的显微组织转变点A1、A3和A cm是在缓慢加热、缓慢冷却条件下测得的临界点,因同一牌号钢的化学成分不尽相同、加热和冷却速度也有差别,实测临界温度出现波动是正常的。
实际生产中,钢的组织转变总有滞后现象,实现组织转变,加热温度要高于临界点,冷却温度要低于临界点。
通常把加热时的临界点表示为Ac1、Ac3和Ac cm,把冷却时的临界点表示为Ar1、Ar3和Ar cm。
另外,用M s和M f表示马氏体开始转变和转变终了温度。
2. *表示计算值,计算采用安德魯斯(K.W.Andrews)公式16A C1=723-10.7Mn%-16.9Ni%+29.1Si%+16.9Cr%+290As%+6.38W% (℃)A C3=910-203%C-15.2Ni%+44.7Si%+104V%+31.5Mo%+13.1W% (℃)M s=539-423C%-30.4Mn%-17.7Ni%-12.1Cr%-7.5Mo% (℃)3.按GB/T20878-2007规定,不锈耐热牌号表示方法变更如下:用牌号前()中的数字代替第1位数字,作为新牌号。
马氏体沉淀硬化不锈钢的临界点参考值(℃)半奥氏沉淀硬化不锈钢的临界点参考值(℃)超马氏体不锈钢的临界点参考值(℃)超临界机组用耐热钢的临界点参考值(℃)1.2Co-18 (И•Я•索科夫Сокол公式,适用于不锈钢,+1.0Mo+1.7Nb+1.2V-0.3Cu-1.2Co为笔者增补的修正项。
负数表示钢中不含δ铁素体。
)6*6. Bs(℃)=630-45Mn-35Si-30Cr-20Ni-24Mo-40V-12W (适用于Cr-Mo-V-型耐热合金钢,当钢的成分处于下列范围:C0.1%~0.55%、Mn0.2%~1.7%、Cr0.1%~3.5%、Ni0.1%~5.0%、Mo0.1%~1.0%,测算偏差为±(20~25℃))。
UC-8410A系列产品兼容性指南说明书
UC-8410A SeriesComponent Compatibility GuideA list of peripheral components suitable for use with the UC-8410A series of computers2016/07/05 Version 2.0© 2016 Moxa Inc. All rights reserved.Copyright Notice©2016 Moxa Inc.All rights reserved.TrademarksThe MOXA logo is a registered trademark of Moxa Inc.All other trademarks or registered marks in this manual belong to their respective manufacturers.DisclaimerInformation in this document is subject to change without notice and does not represent a commitment on the part of Moxa.Moxa provides this document as is, without warranty of any kind, either expressed or implied, including, but not limited to, its particular purpose. Moxa reserves the right to make improvements and/or changes to this manual, or to the products and/or the programs described in this manual, at any time.Information provided in this manual is intended to be accurate and reliable. However, Moxa assumes no responsibility for its use, or for any infringements on the rights of third parties that may result from its use.This document might contain unintentional technical or typographical errors. Changes are periodically made to the information herein to correct such errors, and these changes are incorporated into new editions of the publication.Technical Support Contact Information/supportMoxa AmericasToll-free: 1-888-669-2872 Tel: +1-714-528-6777 Fax: +1-714-528-6778 Moxa China (Shanghai office) Toll-free: 800-820-5036Tel: +86-21-5258-9955Fax: +86-21-5258-5505Moxa EuropeTel: +49-89-3 70 03 99-0 Fax: +49-89-3 70 03 99-99 Moxa Asia-Pacific Tel: +886-2-8919-1230 Fax: +886-2-8919-1231Moxa IndiaTel: +91-80-4172-9088 Fax: +91-80-4132-10451. IntroductionThis document lists hardware components that are proven to provide the performance listed in the specification when used with the Moxa UC-8410A series of embedded computers, or computers that share basic design features with the UC-8410A series. Moxa computers come with multiple peripheral options and are engineered to work with components having different hardware specifications. This flexibility could sometimes lead to compatibility issues. When used with the UC-8410A series of embedded computers, peripherals from one manufacturer may not work as well as the ones made by another manufacturer. Moxa provides this list of UC-8410A series-compatible components, so that users can be certain of a reliable performance from the UC-8410A series, when it is used with the components listed in this document.2. Testing MethodsTo validate that a component meets the Moxa standards for quality and performance, the following five key compatibility tests are run:•Ambient temperature burn-in•Low temperature hard start•Heat/humidity burn-in•Cyclic high-low temperature burn-in•Vibration testAmbient Temperature Burn-InThe component is mounted on to an UC-8410A computer and put through a series of stress tests at an ambient temperature of around 25˚C, for a specified period of time. The duration of the test is determined based on the class of peripherals being tested.Low Temperature Hard StartThe component is mounted on to an unpowered UC-8410A computer and then the system is booted up at an extremely low temperature. The designated low temperature value depends on the computer model being tested.Heat/Humidity Burn-InThe component is mounted on to an UC-8410A computer, placed in a temperature- and humidity-controlled enclosure, and then put through the burn-in test for a specified period of time. The temperature, humidity, and time targets vary depending on the specification of the computer model used in the test.Cyclic High-Low Temperature Burn-InThe component is mounted on to an UC-8410A computer, placed in a temperature controlled enclosure, and then put through the burn-in test wherein the temperature is cyclically varied from very high to very low and back again, over a specified period of time. The target temperature range and the duration of the test can vary depending on the specification of the computer model used in the test.Vibration TestThe component is mounted on to an UC-8410A computer that is bound inside an electromagnetic vibrator, and then put through random vibration tests along three orthogonal axes: longitudinal, transverse, and vertical. The vibration tests are compliant with the EN50155/IEC61373 vibration standards.3. Storage EnduranceStorage media, such as SSDs, CF cards, SD cards, Disk on Module, and Cfast, are composed of different electrical components. The main electrical components in these storage media, the NAND-flash memory and NAND-flash controller, impact the storage endurance and lifespan of the storage media.NAND-Flash Memory EnduranceNAND-flash memories have a limit on the number of times they can be programmed and erased (P/E). The P/E cycle as well as the erase count can be used to determine this limit. For example, an SLC (single-level cell) flash memory has a 60,000 P/E cycle, an MLC (multi-level cell) flash memory has a 3,000 P/E cycle, and TLC NAND flash memories have P/E cycle values up to 1,000. Each flash memory type has a different endurance level, which is why the storage lifespan is based on the flash memory type. Storage that uses SLC type flash memory could have the best endurance level compared with the MLC type storage. SLC storage usually comes with a 5-year OEM warranty (the actual warranty period depends on the original manufacturer). MLC storage only comes with a 1- to 3-year warranty. The major differences between SLC and MLC are: (a) The SLC NAND flash has a lifespan that is around 20 times that of an MLC, and (b) The price can differ by a factor of 4 to 5. The SLC type of storage is recommended for systems that are expected to have high reliability, and for applications that need to frequently write data to a storage medium.Terabytes Written (TBW)TBW is the unit used to evaluate SSD endurance. In actual applications, storage is used for routine operations and data access. Therefore the physical P/E cycle is not appropriate for describing the total rewritable data capacity. The management efficiency of the storage controller also affects the total rewritable data capacity result. For these reasons, Joint Electron Device Engineering Council(JEDEC) has defined a standard for SSD endurance evaluation called JESD218, which uses TBW to measure the endurance of the storage memory. By referring to this TBW value, users can easily estimate the storage specification and select a suitable storage for real-life use cases. For example, when routine operations need a maximum of 20 GB and the expected storage lifespan is 3 years, the total rewritable data demand would be 21.9 TBW (20 GB x 365 x 3). In this case, a storage that has more than 21.9 TBW will meet the requirement. We recommend selecting a storage media with a TBW that is greater than the calculated value.4. Declaration for Liability ExclusionThe specifications, warranty terms, and liability of items listed in this guide are the sole responsibility of the original manufacturers. Moxa does not take any responsibility in this regard. Please visit the manufacturers’ official websites for up-to-date product information before purchasing the components.5. Compatible ComponentsPeripheral components that have been tested and found suitable for use with the UC-8410A series of computers are listed in this section. The following table lists the Test Codes and their descriptions:Test Code DescriptionA The component has passed the ambient temperature verification testB The component has passed the low temperature verification testC The component has passed the heat/humidity verification testD The component has passed the cyclic high-low temperature verification testE The component has not been tested, but is similar to another component that has been tested in terms of its material and design.F The component has passed the vibration verification testSDVendor StorageSize Moxa’s PN Vendor’s PNFlashMemoryBrandFlashMemorySpecController Firmware Warranty WarrantyExclusionTestCodesDSL 1 GB 1352000012012 DFSDPS001GSD06I Toshiba SLC N/A N/A 3 years N/A B, C, D InnoDisk 1 GB 1352000012011 DESDC-01GY81AW2SB Toshiba SLC N/A N/A 5 years Endurance > 60,000 B, C, D InnoDisk 1 GB 1352000012010 DS2A-01GI81W1B Toshiba SLC N/A N/A 5 years Endurance > 60,000 B, C, DmSATAVendor StorageSize Moxa’sPN Vendor’s PNFlashMemoryBrandFlashMemorySpecController Firmware Warranty WarrantyExclusionTestCodesApacer 8 GB N/A APSDM008GM1HN-7TMW Samsung MLC N/A N/A 2 years Endurance > 3,000B, C, D DSL 8 GB N/A DMBCMT008G0PS9I1B Toshiba MLC N/A N/A 2 years N/A B, C, D。
LIS8410C_Datasheet _V1.0
版权© 莱士电子科技有限公司
莱士电子科技有限公司
4/7
LIS-DS-8410C-V1.0
LIS8410C
非隔离降压式 LED 驱动控制器
功能描述
启动和供电 LIS8410C 是通过供电电阻从线电压直接启动。通 过典型应用电路可以了解到,当采用这种供电方式 启动时,芯片 VDD 的供电电容首先通过供电电阻由 线电压充电,当其上的电压达到阈值 UVLO(off)后, 芯片启动,并开始输出脉冲驱动内部功率开关,由 于芯片自身的耗电非常少,通过启动电阻供电,便 可使 VDD 电压维持在某一值上,保证 IC 正常工作。
变压器匝数计算 当以上计算,得出L和IPK后,需用到NBS=LIPK来计算 出变压器或电感的最少匝数,N>LIPK/BS;N为变压 器线圈匝数, S为变压器磁芯中柱的截面积(AE值), B的取值需参考磁芯材质而定,以PC40材质为例,建 议B取值0.28T以下。
最短消磁时间与最长消磁时间 LIS8410C 设置了最短消磁时间和最长消磁时间,当 电感过小或输出电压过高时(输出开路),电感的消 磁时间就有可能小于芯片的最短消磁时间,此时芯片 进入保护状态,系统不断重启;当电感过大或输出电 压过低时(输出短路),电感的消磁时间就有可能大 于芯片的最长消磁时间,此时芯片也会进入保护状态。 因此选取一个合理的电感值非常重要,需要设计者重 点考量。需特别指出,当电源正常工作时,其设计的 最小消磁时间一定不能小于芯片的最小消磁时间,并 且留有足够的余量,否则电源将不能正常工作,由于 该系统架构是降压式,所以输入端整流后的最小直流 电压也一定不能低于输出电压。
过温保护 LIS8410C 集成了过温保护功能,当芯片温度超过 保护阈值后,开关管会关断,进入自动重起保护模 式。当错误条件消失,系统自动恢复正常工作状态。
Si8410 20 21和Si8422 23型号的Silicon Labs低功耗数字隔离器数据手册说
Si8410/20/21 (5 kV) Si8422/23 (2.5 & 5 kV) Data SheetLow-Power, Single and Dual-Channel Digital IsolatorsSilicon Lab's family of ultra-low-power digital isolators are CMOS devices offering sub-stantial data rate, propagation delay, power, size, reliability, and external BOM advan-tages when compared to legacy isolation technologies. The operating parameters ofthese products remain stable across wide temperature ranges and throughout deviceservice life for ease of design and highly uniform performance. All device versions haveSchmitt trigger inputs for high noise immunity and only require V DD bypass capacitors.Data rates up to 150 Mbps are supported, and all devices achieve worst-case propaga-tion delays of less than 10 ns. Ordering options include a choice of isolation ratings (upto 5 kV) and a selectable fail-safe operating mode to control the default output state dur-ing power loss. All products are safety certified by UL, CSA, and VDE, and products inwide-body packages support reinforced insulation withstanding up to 5 kV RMS.Applications•Industrial automation systems •Medical electronics•Hybrid electric vehicles •Isolated switch mode supplies •Isolated ADC, DAC •Motor control•Power inverters •Communication systemsSafety Regulatory Approvals•UL 1577 recognized•Up to 5000 V RMS for 1 minute •CSA component notice 5A approval •IEC 60950-1, 61010-1, 60601-1(reinforced insulation)•VDE certification conformity•IEC 60747-5-5 (VDE0884 Part 5)•EN60950-1 (reinforced insulation)1. Features List•High-speed operation•DC to 150 Mbps•No start-up initialization required •Wide Operating Supply Voltage:• 2.6 – 5.5 V•Up to 5000 V RMS isolation•High electromagnetic immunity •Ultra low power (typical)• 5 V Operation:•< 2.6 mA/channel at 1 Mbps•< 6.8 mA/channel at 100 Mbps • 2.70 V Operation:•< 2.3 mA/channel at 1 Mbps•< 4.6 mA/channel at 100 Mbps •Schmitt trigger inputs •Selectable fail-safe mode•Default high or low output •Precise timing (typical)•11 ns propagation delay max • 1.5 ns pulse width distortion•0.5 ns channel-channel skew • 2 ns propagation delay skew• 5 ns minimum pulse width •Transient immunity 45 kV/µs •AEC-Q100 qualification •Wide temperature range•–40 to 125 °C at 150 Mbps •RoHS compliant packages•SOIC-16 wide body•SOIC-8 narrow body2. Ordering GuideTable 2.1. Ordering Guide1,2,33. Functional Description3.1 Theory of OperationThe operation of an Si84xx channel is analogous to that of an opto coupler, except an RF carrier is modulated instead of light. This simple architecture provides a robust isolated data path and requires no special considerations or initialization at start-up. A simplified block diagram for a single Si84xx channel is shown in the figure below.A BFigure 3.1. Simplified Channel DiagramA channel consists of an RF Transmitter and RF Receiver separated by a semiconductor-based isolation barrier. Referring to the Transmitter, input A modulates the carrier provided by an RF oscillator using on/off keying. The Receiver contains a demodulator that decodes the input state according to its RF energy content and applies the result to outputB via the output driver. This RF on/off keying scheme is superior to pulse code schemes as it provides best-in-class noise immunity, low power consumption, and better immunity to magnetic fields. See the figure below for more details.Input SignalModulation SignalOutput SignalFigure 3.2. Modulation Scheme3.2 Eye DiagramThe figure below illustrates an eye-diagram taken on an Si8422. For the data source, the test used an Anritsu (MP1763C) Pulse Pattern Generator set to 1000 ns/div. The output of the generator's clock and data from an Si8422 were captured on an oscilloscope. The re-sults illustrate that data integrity was maintained even at the high data rate of 150 Mbps. The results also show that 2 ns pulse width distortion and 350 ps peak jitter were exhibited.Figure 3.3. Eye Diagram4. Device OperationDevice behavior during start-up, normal operation, and shutdown is shown in Figure 4.1 Device Behavior during Normal Operation on page 6, where UVLO+ and UVLO- are the positive-going and negative-going thresholds respectively. Refer to the table below to determine outputs when power supply (V DD) is not present.Table 4.1. Si84xx Logic Operation Table4.1 Device StartupOutputs are held low during powerup until V DD is above the UVLO threshold for time period tSTART. Following this, the outputs follow the states of inputs.4.2 Under Voltage LockoutUnder Voltage Lockout (UVLO) is provided to prevent erroneous operation during device startup and shutdown or when V DD is below its specified operating circuits range. Both Side A and Side B each have their own undervoltage lockout monitors. Each side can enter or exit UVLO independently. For example, Side A unconditionally enters UVLO when V DD1 falls below V DD1(UVLO–) and exits UVLO when V DD1 rises above V DD1(UVLO+). Side B operates the same as Side A with respect to its V DD2 supply.VVFigure 4.1. Device Behavior during Normal Operation4.3 Layout RecommendationsTo ensure safety in the end user application, high voltage circuits (i.e., circuits with >30 V AC) must be physically separated from the safety extra-low voltage circuits (SELV is a circuit with <30 V AC) by a certain distance (creepage/clearance). If a component, such as a digital isolator, straddles this isolation barrier, it must meet those creepage/clearance requirements and also provide a sufficiently large high-voltage breakdown protection rating (commonly referred to as working voltage protection). Table 5.5 Regulatory Information1 on page 20and Table 5.6 Insulation and Safety-Related Specifications on page 21detail the working voltage and creepage/clearance capabilities of the Si84xx. These tables also detail the component standards (UL1577, IEC60747, CSA 5A), which are readily accepted by certification bodies to provide proof for end-system specifications requirements. Refer to the end-system specification (61010-1, 60950-1, 60601-1, etc.) requirements before starting any design that uses a digital isolator.4.3.1 Supply BypassThe Si841x/2x family requires a 0.1 μF bypass capacitor between V DD1and GND1 and V DD2and GND2. The capacitor should be placed as close as possible to the package. To enhance the robustness of a design, it is further recommended that the user also add 1μF bypass capacitors and include 100 Ω resistors in series with the inputs and outputs if the system is excessively noisy.4.3.2 Pin ConnectionsNo connect pins are not internally connected. They can be left floating, tied to V DD, or tied to GND.4.3.3 Output Pin TerminationThe nominal output impedance of an isolator driver channel is approximately 50 Ω, ±40%, which is a combination of the value of the on-chip series termination resistor and channel resistance of the output driver FET. When driving loads where transmission line effects will be a factor, output pins should be appropriately terminated with controlled impedance PCB traces.4.4 Fail-Safe Operating ModeSi84xx devices feature a selectable (by ordering option) mode whereby the default output state (when the input supply is unpowered) can either be a logic high or logic low when the output supply is powered. See Table 4.1 Si84xx Logic Operation Table on page 5 and Section 2. Ordering Guide for more information.4.5 Typical Performance CharacteristicsThe typical performance characteristics depicted in the following diagrams are for information purposes only. Refer to Table 5.2 Electri-cal Characteristics on page 9 through Table 5.4 Electrical Characteristics 1 on page 17for actual specification limits.Figure 4.2. Si8410 Typical V DD1 Supply Currentvs. Data Rate 5, 3.3, and 2.70 V Operation Figure 4.3. Si8420 Typical V DD1 Supply Currentvs. Data Rate 5, 3.3, and 2.70 V OperationFigure 4.4. Si8421 Typical V DD1 or V DD2 Supply Current vs.Data Rate 5, 3.3, and 2.70 V Operation (15 pF Load)Figure 4.5. Si8410 Typical V DD2 Supply Current vs. Data Rate 5, 3.3, and 2.70 V Operation(15 pF Load)Figure 4.6. Si8420 Typical V DD2 Supply Current vs. Data Rate5, 3.3, and 2.70 V Operation(15 pF Load)Figure 4.7. Si8422 Typical V DD1 or V DD2 Supply Current vs.Data Rate 5, 3.3, and 2.70 V Operation (15 pF Load)Figure 4.8. Si8423 Typical V DD1 Supply Currentvs. Data Rate 5, 3.3, and 2.70 V OperationFigure 4.9. Si8423 Typical V DD2 Supply Current vs. Data Rate5, 3.3, and 2.70 V Operation(15 pF Load)Figure 4.10. Propagation Delayvs. TemperatureElectrical Specifications 5. Electrical SpecificationsTable 5.1. Recommended Operating ConditionsTable 5.2. Electrical Characteristics(V DD1 = 5 V ±10%, V DD2 = 5 V ±10%, T A = –40 to 125 °C)InputTypical OutputFigure 5.1. Propagation Delay TimingTable 5.3. Electrical Characteristics (V DD1 = 3.3 V ±10%, V DD2 = 3.3 V ±10%, T A = –40 to 125 °C)Table 5.4. Electrical Characteristics1 (V DD1 = 2.70 V, V DD2 = 2.70 V, T A = –40 to 125 °C)Table 5.5. Regulatory Information1CSAThe Si84xx is certified under CSA Component Acceptance Notice 5A. For more details, see File 232873.61010-1: Up to 600 V RMS reinforced insulation working voltage; up to 600 V RMS basic insulation working voltage.60950-1: Up to 600 V RMS reinforced insulation working voltage; up to 1000 V RMS basic insulation working voltage.60601-1: Up to 125 V RMS reinforced insulation working voltage; up to 380 V RMS basic insulation working voltage.VDEThe Si84xx is certified according to IEC 60747-5-5. For more details, see File 5006301-4880-0001.60747-5-5: Up to 891 V peak for basic insulation working voltage.60950-1: Up to 600 V RMS reinforced insulation working voltage; up to 1000 V RMS basic insulation working voltage.ULThe Si84xx is certified under UL1577 component recognition program. For more details, see File E257455.Rated up to 5000 V RMS isolation voltage for basic insulation.Note:1.Regulatory Certifications apply to2.5 kV RMS rated devices which are production tested to3.0 kV RMS for 1 sec. Regulatory Certifi-cations apply to 5.0 kV RMS rated devices which are production tested to 6.0 kV RMS for 1 sec.For more information, see Section 2. Ordering Guide.Table 5.6. Insulation and Safety-Related SpecificationsTable 5.7. IEC 60747-5-5 Insulation Characteristics for Si84xxxx1Table 5.8. IEC Safety Limiting Values1Table 5.9. Thermal Characteristics200150********2501250Case Temperature (ºC)S a f e t y -L i m i t i n g V a l u es (m A )375Figure 5.2. (WB SOIC-16) Thermal Derating Curve, Dependence of Safety Limiting Valueswith Case Temperature per DIN EN 60747-5-5200150********2001000Case Temperature (ºC)S a f e t y -L i m i t i n g V a l u es (m A )300Figure 5.3. (NB SOIC-8) Thermal Derating Curve, Dependence of Safety Limiting Valueswith Case Temperature per DIN EN 60747-5-5Table 5.10. Absolute Maximum Ratings16. Pin Descriptions6.1 Pin Descriptions (Wide-Body SOIC)VVVVFigure 6.1. Wide-Body SOICTable 6.1. Pin Descriptions6.2 Pin Descriptions (Narrow-Body SOIC)V DD2V DD2Figure 6.2. Narrow-Body SOIC7. Package Outlines7.1 Package Outline (16-Pin Wide Body SOIC)The figure below illustrates the package details for the Si84xx Digital Isolator. The table below lists the values for the dimensions shown in the illustration.Figure 7.1. 16-Pin Wide Body SOICTable 7.1. Package Diagram Dimensions7.2 Package Outline (8-Pin Narrow Body SOIC)The figure below illustrates the package details for the Si84xx. The table below lists the values for the dimensions shown in the illustra-tion.Figure 7.2. 8-pin Small Outline Integrated Circuit (SOIC) PackageTable 7.2. Package Diagram Dimensions8. Land Patterns8.1 Land Pattern (16-Pin Wide-Body SOIC)The figure below illustrates the recommended land pattern details for the Si84xx in a 16-pin wide-body SOIC. The table below lists the values for the dimensions shown in the illustration.Figure 8.1. 16-Pin SOIC Land PatternTable 8.1. 16-Pin Wide Body SOIC Land Pattern Dimensions8.2 Land Pattern (8-Pin Narrow Body SOIC)The figure below illustrates the recommended land pattern details for the Si84xx in an 8-pin narrow-body SOIC. The table below lists the values for the dimensions shown in the illustration.Figure 8.2. PCB Land Pattern: 8-Pin Narrow Body SOICTable 8.2. PCM Land Pattern Dimensions (8-Pin Narrow Body SOIC)9. Top Markings9.1 Top Marking (16-Pin Wide Body SOIC)Figure 9.1. Isolator Top MarkingTable 9.1. Top Marking ExplanationLine 1 Marking:Base Part NumberOrdering Options(See 2. Ordering Guide for more information).Si84 = Isolator product seriesXY = Channel ConfigurationX = # of data channels (2, 1)Y = # of reverse channels (1, 0)1,2S = Speed GradeA = 1 MbpsB = 150 MbpsV = Insulation ratingA = 1 kV;B = 2.5 kV;C = 3.75 kV;D = 5 kVLine 2 Marking:YY = YearWW = Workweek Assigned by assembly subcontractor. Corresponds to the year and workweek of the mold date.TTTTTT = Mfg Code Manufacturing code from assembly house. Line 3 Marking:Circle = 1.7 mm Diameter(Center-Justified)“e4” Pb-Free Symbol.Country of Origin ISO Code Abbreviation TW = Taiwan.Notes:1.The Si8422 has one reverse channel.2.The Si8423 has zero reverse channels.9.2 Top Marking (8-Pin Narrow-Body SOIC)Figure 9.2. Isolator Top MarkingTable 9.2. Top Marking ExplanationLine 1 Marking:Base Part NumberOrdering Options(See 2. Ordering Guide for more information).Si84 = Isolator product seriesXY = Channel ConfigurationX = # of data channels (2, 1)Y = # of reverse channels (1, 0)1,2S = Speed GradeA = 1 MbpsB = 150 MbpsV = Insulation ratingA = 1 kV;B = 2.5 kV;C = 3.75 kV;D = 5 kVLine 2 Marking:YY = YearWW = Workweek Assigned by assembly subcontractor. Corresponds to the year and workweek of the mold date.R = Product (OPN) Revision F = Wafer FabLine 3 Marking:Circle = 1.1 mm DiameterLeft-Justified “e3” Pb-Free Symbol.First two characters of the manufacturing code.A = Assembly SiteI = Internal CodeXX = Serial Lot NumberLast four characters of the manufacturing code.Notes:1.The Si8422 has one reverse channel.2.The Si8423 has zero reverse channels.Document Change List 10. Document Change List10.1 Revision 0.1•Initial release.10.2 Revision 0.1 to Revision 1.0•Updated features list.•Updated transient immunity.•Removed block diagram from front page.•Added chip graphics on front page.•Added Peak Eye Diagram jitter in Table 5.2 Electrical Characteristics on page 9through Table 5.4 Electrical Characteristics1on page 17.•Updated transient immunity•Moved Table 4.1 Si84xx Logic Operation Table on page 5 to Section 4. Device Operation.•Added Section 4. Device Operation.•Added Section 4.4 Fail-Safe Operating Mode.•Moved Section 4.5 Typical Performance Characteristics.•Deleted RF Radiated Emissions section.•Deleted RF Magnetic and Common-Mode Transient Immunity section.•Updated MSL rating to MSL2A.10.3 Revision 1.0 to Revision 1.1•Numerous text edits.•Added table notes to Table 9.1 Top Marking Explanation on page 32 and Table 9.2 Top Marking Explanation on page 33.10.4 Revision 1.1 to Revision 1.2•Updated Timing Characteristics in Table 5.2 Electrical Characteristics on page 9through Table 5.4 Electrical Characteristics1on page 17.10.5 Revision 1.2 to Revision 1.3•Added references to AEC-Q100 qualified throughout.•Changed all 60747-5-2 references to 60747-5-5.•Updated Table 2.1 Ordering Guide1,2,3 on page 2.•Added table notes 1 and 2.•Removed references to moisture sensitivity levels.•Added Revision D ordering information.•Removed older revisions.•Updated Section 9.1 Top Marking (16-Pin Wide Body SOIC).10.6 Revision 1.3 to Revision 1.4September 16, 2016•Updated data sheet format.Table of Contents1. Features List (1)2. Ordering Guide (2)3. Functional Description (3)3.1 Theory of Operation (3)3.2 Eye Diagram (4)4. Device Operation (5)4.1 Device Startup (5)4.2 Under Voltage Lockout (6)4.3 Layout Recommendations (6)4.3.1 Supply Bypass (6)4.3.2 Pin Connections (6)4.3.3 Output Pin Termination (6)4.4 Fail-Safe Operating Mode (6)4.5 Typical Performance Characteristics (7)5. Electrical Specifications (9)6. Pin Descriptions (25)6.1 Pin Descriptions (Wide-Body SOIC) (25)6.2 Pin Descriptions (Narrow-Body SOIC) (26)7. Package Outlines (27)7.1 Package Outline (16-Pin Wide Body SOIC) (27)7.2 Package Outline (8-Pin Narrow Body SOIC) (28)8. Land Patterns (30)8.1 Land Pattern (16-Pin Wide-Body SOIC) (30)8.2 Land Pattern (8-Pin Narrow Body SOIC) (31)9. Top Markings (32)9.1 Top Marking (16-Pin Wide Body SOIC) (32)9.2 Top Marking (8-Pin Narrow-Body SOIC) (33)10. Document Change List (34)10.1 Revision 0.1 (34)10.2 Revision 0.1 to Revision 1.0 (34)10.3 Revision 1.0 to Revision 1.1 (34)10.4 Revision 1.1 to Revision 1.2 (34)10.5 Revision 1.2 to Revision 1.3 (34)10.6 Revision 1.3 to Revision 1.4 (34)Silicon Laboratories Inc.400 West Cesar Chavez Austin, TX 78701USASmart.Connected.Energy-Friendly .Products/productsQuality/qualitySupport and CommunityDisclaimerSilicon Labs intends to provide customers with the latest, accurate, and in-depth documentation of all peripherals and modules available for system and software implementers using or intending to use the Silicon Labs products. Characterization data, available modules and peripherals, memory sizes and memory addresses refer to each specific device, and "Typical" parameters provided can and do vary in different applications. Application examples described herein are for illustrative purposes only. Silicon Labs reserves the right to make changes without further notice and limitation to product information, specifications, and descriptions herein, and does not give warranties as to the accuracy or completeness of the included information. Silicon Labs shall have no liability for the consequences of use of the information supplied herein. This document does not imply or express copyright licenses granted hereunder to design or fabricate any integrated circuits. The products are not designed or authorized to be used within any Life Support System without the specific written consent of Silicon Labs. A "Life Support System" is any product or system intended to support or sustain life and/or health, which, if it fails, can be reasonably expected to result in significant personal injury or death. Silicon Labs products are not designed or authorized for military applications. Silicon Labs products shall under no circumstances be used in weapons of mass destruction including (but not limited to) nuclear, biological or chemical weapons, or missiles capable of delivering such weapons.Trademark InformationSilicon Laboratories Inc.® , Silicon Laboratories®, Silicon Labs®, SiLabs® and the Silicon Labs logo®, Bluegiga®, Bluegiga Logo®, Clockbuilder®, CMEMS®, DSPLL®, EFM®, EFM32®, EFR, Ember®, Energy Micro, Energy Micro logo and combinations thereof, "the world’s most energy friendly microcontrollers", Ember®, EZLink®, EZRadio®, EZRadioPRO®, Gecko®, ISOmodem®, Precision32®, ProSLIC®, Simplicity Studio®, SiPHY®, Telegesis, the Telegesis Logo®, USBXpress® and others are trademarks or registered trademarks of Silicon Labs. ARM, CORTEX, Cortex-M3 and THUMB are trademarks or registered trademarks of ARM Holdings. Keil is a registered trademark of ARM Limited. All other products or brand names mentioned herein are trademarks of their respective holders.。
8410与其他标准比较
(1)试样不燃烧,或火焰在样品上水平燃烧的速度不超过102mm/min
(注:当样品表面是切割出来的,则这个判定要求不适用于测试该表面火焰水平燃烧速度,);
(2)从测试记时开始,若样品燃烧的时间不到60秒,就停止燃烧了,且从记时开始那个位置起,样品的损毁长度没有超过51mm,则认为其满足FMVSS302的要求。
厚度取零件的最小厚度不超于13mm,若零件厚度大于13mm,应用机械方法取13mm,除FMVSS 302(356mm*102mm)其他都是356mm*100mm
技术要求
1.如果试样暴露在火焰中15 s,熄灭火源试样仍未燃烧,或试样能燃烧,但火焰达到第一测量标线之前熄灭,无燃烧距离可计,则被认为满性
标准
GB 8410:2006
FMVSS 302:2005,ASTM D 5132:2003 ,ISO 3795:1989 ,JIS D1201:1998
燃烧类型
水平燃烧
水平燃烧
原理
在试样水平夹持在U形支架上,在燃烧箱中用规定的高度火焰点燃试样的自由端15s后,确定试样上火焰是否熄灭,或何时熄灭,以及试样的距离和燃烧该距离所用的时间
相同
气体
液化气,天然气、城市煤气。火焰高度38mm
天然气火焰高度38mm
环境要求
测试前在23±2℃and 50±5% RH平衡至少24小时,但不超过168h
测试前在23±2℃and 50±5% RH平衡至少24小时
(ISO 3795:1989,JIS D1201:1998不超过168h)
样品尺寸
356mm*100mm至少5块,厚度取零件的最小厚度不超于13mm,若零件厚度大于13mm,应用机械方法取13mm
AXF电磁流量计
负载电感:≤3.3 mH
通讯设备的输入阻抗: ≥10 kΩ(24 kHz时)
若需邮寄纸质样本或技术支持,请电询 18663726013 0531-89000918-804 范经理 上海日基自动化控制有限公司济南办
2
HART:
通讯距离: 当使用多股双绞线时,通讯距离≤1.5 km (0.9英里)。 通 讯距离会随电缆的类型而变化。
累积值开关(*1): 当累积值等于或大于设定值时,状态为输出。
预设累积值(*1): 参数设置或状态输入功能允许系统将累计值预设为设定值 或零。
0% 信号锁定(*1)(*2): 状态输入强制性地将瞬时流量显示、电流输出、脉冲输出 和流量累积值锁定为0%。
报警选择功能 (*2): 报警分为系统报警(硬件故障),过程报警(如“Empty Pipe(空管)”、“Signal Overflow(信号溢出)”和 “Adhension Alarm(粘污报警)”)、设置报警和警 告。用户可以选择是否对各项进行报警。报警的电流输出 值可以任意选择:≤2.4 mA,固定为4 mA、≥21.6 mA 等,或HOLD(保持)。
P.15
接地环内径
P.16
附件
P.16
端子结构,端子接线
P.16
型号和附加规格代码
P.17
传感器的可选规格
P.23
外型尺寸
P.27
选型数据
P.42
推荐在流量管与用户法兰之间使用的垫片
P.42
订货信息
P.42
横河电机株式会社 2-9-32, Nakacho, Musashino-shi, Tokyo, 180 Japan Tel.: 81-422-52-4443 Fax.: 81-422-52-2018
n4000-13(SI)
- Fine-Line Multilayers - B ackplanes- S urface-Mount Multilayers - B GA Multilayers - M CM-Ls - CSP Attachment- W ireless Communication Infrastructure - H igh Speed Services - H igh Speed Storage Networks - I nternet Switching / Routing SystemsThe Nelco® N4000-13 series is an enhanced epoxy resin systemengineered to provide both outstanding thermal and high signal speed / low signal loss properties. N4000-13 SI ® is excellent for applications that require optimum signal integrity and precise impedance control, while maintaining high reliability through CAF2 and thermal resistance.Lead-Free Assembly Compatible- Ideally suited for assemblies with a maximum reflow temperature of 245°C1- Nelco N4000-13 has shown acceptable results in reflow conditions up to 260ºC1 depending on the PCB design and manufacturing processingTg >210ºC, outstanding thermal, electrical and signalloss properties- Excellent thickness control for tight tolerance impedance applications- Low Df and Dk allows for low signal distortion and faster signal propogation required by high frequency (1 - 10 GHz) and high reliability applications CAF 2 Resistant- The low Z-CTE and proven CAF resistance2 provide long-term reliability for both RF and digital applicationsSignal Integrity and Buried Capacitance TM Options- When used, SI glass provides enhanced electrical performance for even the most demanding applications - Approved ZBC-2000® substrate available for thinner, more reliable assemblies and increased board densities High-Tg FR-4 processing- Processes similar to traditional high Tg FR-4 materials - 90 min press at 193ºC and 275-350 psiAvailable in a variety of constructions - Vacuum laminated- Available in a wide variety of constructions, copper weights and glass styles including standard copper, double treat and RTFOIL ® laminate.- Meets UL 94V-0 and IPC-4101/29 specifications - All Nelco® materials are RoHS compliant.Global AvailabilityHigh-Speed Multifunctional Epoxy Laminate & PrepregNelco ® N4000-13Nelco ® N4000-13 SI ®Park’s UL file number: E36295ApplicationsNelco Products, Inc., California+1.714.879.4293Neltec, Inc., Arizona +1.480.967.5600Nelco Products Pte, Asia Pacific +65.6861.7117Neltec, SA, France + info@P A R KE L E C T R O C H E M I C A LC O R P .Rev 4-10Mechanical PropertiesN4000-13-13 SIU.S. Units N4000-13-13 SI MetricTest MethodPeel Strength - 1 oz. (35 micron) Cu After Solder Float7.57.5 lb / inch 1.31 1.31 N / mm IPC-TM-650.2.4.8 At Elevated Temperature8.1 8.1 lb / inch 1.42 1.42 N / mm IPC-TM-650.2.4.8.2a After Exposure to Process Solutions 9.0 9.0 lb / inch 1.58 1.58 N / mm IPC-TM-650.2.4.8X / Y CTE [-40°C to +125°C] 10 - 14 9 - 13 ppm / °C 10 - 14 9 - 13 ppm / °C IPC-TM-650.2.4.41Z Axis CTE Alpha 1 [50°C to Tg] 70 70 ppm / °C 70 70 ppm / °C IPC-TM-650.2.4.41Z Axis CTE Alpha 2 [Tg to 260°C] 280 280 ppm / °C 280 280 ppm / °C IPC-TM-650.2.4.41Z Axis Expansion [50°C to 260°C] 3.5 3.5 %3.5 3.5 %IPC-TM-650.2.4.41Young’s Modulus (X / Y) 4.2 / 3.3 2.4 / 2.3 psi x 106 28.5 / 22.4 16.5 / 15.9 GN / m 2 ASTM D3039Poisson’s Ratios (X / Y) 0.13 / 0.11 0.18 / 0.170.13 / 0.11 0.18 / 0.17ASTM D3039Thermal Conductivity 0.350 0.294 W / mK 0.350 0.294 W / mK ASTM E1461Specific Heat1.201.30J / gK1.20 1.30J / gKASTM E1461Electrical PropertiesDielectric Constant (50% resin content)@ 1 GHz (RF Impedance) 3.73.4 3.7 3.4 IPC-TM-650.2.5.5.9 @ 2.5 GHz (Split Post Cavity) 3.7 3.2 3.7 3.2 @ 10 GHz (Stripline)3.6 3.2 3.6 3.2IPC-TM-650.2.5.5.5@ 10 GHz (Split Post Cavity) 3.7 3.3 3.7 3.3Dissipation Factor (50% resin content) @ 2.5 GHz (Split Post Cavity) 0.009 0.008 0.009 0.008 @ 10 GHz (Stripline)0.009 0.008 0.009 0.008 IPC-TM-650.2.5.5.5@ 10 GHz (Split Post Cavity) 0.0080.0070.0080.007Volume Resistivity C - 96 / 35 / 90 108 108 M Ω - cm 108 108M Ω - cm IPC-TM-650.2.5.17.1 E - 24 / 125 107 108 M Ω - cm107 108 M Ω - cm IPC-TM-650.2.5.17.1Surface Resistivity C - 96 / 35 / 90 107 107 M Ω 107 107 M Ω IPC-TM-650.2.5.17.1E - 24 / 125 107 107 M Ω 107 107 M Ω IPC-TM-650.2.5.17.1Electric Strength 1200 1000 V / mil 4.7x104 3.9x104 V / mm IPC-TM-650.2.5.6.2Dielectric Breakdown >50 >50 kV >50 >50 kV IPC-TM-650.2.5.6Arc Resistance123 123seconds 123 123 seconds IPC-TM-650.2.5.1Thermal PropertiesGlass Transition Temperature (Tg) DSC (°C) 210 210 °C 210 210 °C IPC-TM-650.2.4.25c TMA (°C) 200 200 °C 200 200 °C IPC-TM-650.2.4.24c DMA (°C) (Tan d Peak)240 240 °C 240 240 °C IPC-TM-650.2.4.24.3Degradation Temp (TGA) (5% wt. loss) 350 350 °C 350 350 °C IPC-TM-650.2.4.24.6Pressure Cooker-60 min then solder dip IPC-TM-650.2.6.16 @288°C until failure (max 10 min.) Pass Pass Pass Pass (modified)T260 30+ 30+ minutes 30+ 30+ minutes IPC-TM-650.2.4.24.1T28810+ 10+ minutes 10+ 10+ minutes IPC-TM-650.2.4.24.1Chemical / Physical PropertiesMoisture Absorption 0.10.1 wt. % 0.10.1 wt. % IPC-TM-650.2.6.2.1Methylene Chloride Resistance 0.7 0.7 % wt. chg. 0.7 0.7 % wt. chg. IPC-TM-650.2.3.4.3Density [50% resin content]1.911.79g / cm 31.911.79g / cm 3 Internal MethodNelco N4000-13 and N4000-13 SI ®High-Speed Multifunctional Epoxy Laminate & PrepregP A R KE L E C T R O C H E M I C A LC O R P .Park Electrochemical Corp. is a global advanced materials company which develops and manufactures high-technology digital and RF/microwave printed circuit materials and advanced composite materials. The company operates under the Nelco ®, Nelcote ® and Nova™ names. All test data provided are typical values and not intended to be specification values. For review of critical specification tolerances, please contact a Nelco representative directly. Nelco reserves the right to change these typical values as a natural process of refining our testing equipment and techniques. Nelco reserves the right to make changes without further notice to any products herein to improve reliability, function or design. Nelco does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights nor the rights of others. This disclaimer of warranty is in lieu of all warranties whether expressed, implied or statutory, including implied warranties of merchantability or fitness for a particular purpose.Nelco ®, Neltec ®, Nelcote ®, Nova™, RTFoil ®, SI ® , LD ® and EF ® are trademarks of Park Electrochemical Corp. BC ®, ZBC-2000® and Buried Capacitance™ are Trademarks of the Sanmina-SCI Corporation.1Refer to the N4000-13 Best Practices document and Contract Manufacturing Q&A for PCB processing recommendations. Visit for more information.2CAF resistance has been established to greater than 500 hours using a specific OEM coupon design and test procedure. Visit for more information.。
AISI钢等级
AISI钢等级美国钢铁学院规范化编号AISI钢等级包括以下:内容∙ 1 碳钢和低合金钢∙ 2 不锈钢∙ 3 其他钢∙ 4 参考∙ 5 参见碳钢和低合金钢碳钢并且低合金钢由一个四位数数字选定,前二个数字表明合金元件和前二个数字表明相当数量碳,在一百分之的百由重量。
例如,1060钢是包含0.60 wt % C.的简单的碳钢。
不锈钢主要文章:不锈钢∙200系列:奥氏体的铬镍锰合金∙300系列:奥氏体的铬镍合金o类型301 :高度柔软,为被形成的产品。
在机械工作期间,并且迅速地硬化。
o类型303 :通过硫磺的加法释放机器版本的304o类型304 :最共同; 经典18/8不锈钢。
o类型316 :下最共同性; 为食物并且外科不锈钢用途; 钼的合金加法防止腐蚀的具体形式。
316钢是抗性对腐蚀比18-8不锈钢。
316钢用于处理某一食物和药品,经常需要它为了使金属污秽减到最小。
316钢亦称“海洋成绩”不锈钢归结于它增加的能力抵抗盐水腐蚀与类型304比较。
SS316为大厦是常用的核再加工植物。
∙400系列:铁素体和martensitic铬合金o类型408 :抗热; 恶劣的耐腐蚀性; 11%铬,8%镍。
o类型409 :最便宜的类型; 使用为汽车尾气; 铁素体(仅铁或铬)。
o类型410 :martensitic (高强度铁或铬)。
o类型416 :最可用机器做不锈钢; 由减少耐腐蚀性额外硫磺的加法达到。
常用为“不锈的”步枪桶o类型420 :“利器等级” martensitic; 相似于Brearley的原始的“不锈钢”。
亦称“外科钢”。
o类型430 :装饰,即,为汽车修剪; 铁素体。
o类型440 :利器钢高级,与更多碳在它,考虑到好边缘保留,当钢是适当地被对待的热。
∙500系列:耐热铬合金∙600系列:martensitic 降雨雪硬化合金o类型630 :多数共同的酸碱度不锈,著名作为17-4; 17%铬,4%镍其他钢标准组织ASTM国际导致标准为结构钢使用在建筑业。
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1. Electrical Specifications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .4 2. Typical Performance Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 3. Application Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 3.1. Theory of Operation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 3.2. Eye Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 3.3. Layout Recommendations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 4. Errata and Design Migration Guidelines (Revision C Only) . . . . . . . . . . . . . . . . . . . . . . 22 4.1. Power Supply Bypass Capacitors (Revision C Only) . . . . . . . . . . . . . . . . . . . . . . . .22 4.2. Latch Up Immunity (Revision C Only) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22 5. Pin Descriptions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23 6. Ordering Guide . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24 7. Package Outline: 8-Pin Narrow Body SOIC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .25 8. Landing Pattern: 8-Pin Narrow Body SOIC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26 9. Top Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27 Document Change List . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .28 Contact Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .30
1
Symbol VIH VIL VOH VOL IL ZO
Test Condition
Min 2.0 —
Typ — — 4.8 0.2 — 85
Max — 0.8 — 0.4 ±10 —
Unit V V V V µA
loh = –4 mA lol = 4 mA
VDD1,VDD2 – 0.4 — — —
Block Diagram
Si8410 Si8420 Si8421
A1
B1
A1 A2
B1 B2
A1 A2
B1 B2
Rev. 1.2 12/09
Copyright © 2009 by Silicon Laboratories
Si8410/20/21
Si8410/20/21
2
Rev. 1.2
Si8410/20/21 TABLE O F C ONTENTS
125 °C at 150 Mbps 1.8 mA per channel at 1 Mbps Narrow body SOIC-8 package < 2.1 mA per channel at 10 Mbps RoHS compliant < 4 mA per channel at 100 Mbps <
mA
mA
mA
1 Mbps Supply Current (All inputs = 500 kHz square wave, CI = 15 pF on all outputs) — — — — — — 1.3 0.9 2.0 1.6 1.9 1.9 2.0 1.4 3.0 2.4 2.9 2.9 mA
DC Supply Current (All inputs 0 V or at Supply) All inputs 0 DC All inputs 0 DC All inputs 1 DC All inputs 1 DC All inputs 0 DC All inputs 0 DC All inputs 1 DC All inputs 1 DC All inputs 0 DC All inputs 0 DC All inputs 1 DC All inputs 1 DC — — — — — — — — — — — — 0.8 0.8 1.8 0.8 1.0 1.3 3.0 1.4 1.3 1.3 2.3 2.3 1.2 1.2 2.7 1.2 1.5 2.0 4.5 2.1 2.0 2.0 3.5 3.5
1 2 3 4
Top View
8 7 6 5
VDD2 B1 B2 GND2
Safety Regulatory Approvals
Patents pending
UL 1577 recognized 2500 VRMS for 1 minute CSA component notice 5A approval IEC 60950, 61010 approved
1 2 3 4
Top View
8 7 6 5
VDD2 GND2 B1 GND2
Si842x
VDD1 A1 A2 GND1
Applications
Isolated switch mode supplies Isolated ADC, DAC
Motor control Power factor correction systems
Rev. 1.2
3Si8410/2Fra bibliotek/211. Electrical Specifications
Table 1. Electrical Characteristics
(VDD1 = 5 V ±10%, VDD2 = 5 V ±10%, TA = –40 to 125 ºC)
Parameter High Level Input Voltage Low Level Input Voltage High Level Output Voltage Low Level Output Voltage Input Leakage Current Output Impedance Si8410Ax, Bx VDD1 VDD2 VDD1 VDD2 Si8420Ax, Bx VDD1 VDD2 VDD1 VDD2 Si8421Ax, Bx VDD1 VDD2 VDD1 VDD2 Si8410Ax, Bx VDD1 VDD2 Si8420Ax, Bx VDD1 VDD2 Si8421Ax, Bx VDD1 VDD2
DC
Precise timing (typical)
1.5 0.5
to 150 Mbps ns worst case
Low propagation delay
<10
ns pulse width distortion ns channel-channel skew 2 ns propagation delay skew
Si8410/20/21
I S O P R O L O W - P O W E R S ING L E
Features
Pin Assignments
AND
D U A L - C H A N N E L D I G ITA L I SO LA TO R S