AOD4182

SymbolSymbolt ≤ 10s Steady-State Steady-StateR θJCMaximum Junction-to-Case°C/W°C/W Maximum Junction-to-Ambient A D1501.5Absolute Maximum Ratings T A =25°C unless otherwise noted Units Maximum Junction-to-Ambient A°C/W R θJA 164020Thermal CharacteristicsParameterTyp Max GS DGSDSymbolMin Typ Max Units BV DSS 80VV DS =80V, V GS =0V10T J =55°C50I GSS 100nA V GS(th)Gate Threshold Voltage 2.8 3.34.2V I D(ON)85A 12.515.5T J =125°C22.5281620m Ωg FS33S V SD 0.71V I S54A C iss 133516702005pF C oss 150215280pF C rss 4072100pF R g0.350.75 1.2ΩQ g (10V)222834nC Q gs 8.81113nC Q gd 5811nC t D(on)12ns t r 9ns t D(off)20ns t f 8ns t rr 14.52127.5ns Q rr45.56585nCTHIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE.Body Diode Reverse Recovery TimeDrain-Source Breakdown Voltage On state drain currentI D =250µA, V GS =0V V GS =10V, V DS =5V V GS =10V, I D =20AReverse Transfer Capacitance I F =20A, dI/dt=500A/µsV GS =0V, V DS =40V, f=1MHz SWITCHING PARAMETERS Electrical Characteristics (T J =25°C unless otherwise noted)STATIC PARAMETERS Parameter Conditions I DSS µA V DS =V GS I D =250µA V DS =0V, V GS = ±25V Zero Gate Voltage Drain Current Gate-Body leakage current Forward TransconductanceDiode Forward Voltage R DS(ON)Static Drain-Source On-Resistancem ΩI S =1A,V GS =0VV DS =5V, I D =20AV GS =7V, I D =20AV GS =10V, V DS =40V, R L =2Ω, R GEN =3ΩGate resistanceV GS =0V, V DS =0V, f=1MHzTurn-Off Fall TimeTotal Gate Charge V GS =10V, V DS =40V, I D =20AGate Source Charge Gate Drain Charge Body Diode Reverse Recovery Charge I F =20A, dI/dt=500A/µsMaximum Body-Diode Continuous CurrentGInput Capacitance Output Capacitance Turn-On DelayTime DYNAMIC PARAMETERS Turn-On Rise Time Turn-Off DelayTime A. The value of R θJA is measured with the device mounted on 1in 2FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. ThePower dissipation P DSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it.B. The power dissipation P D is based on T J(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used.C. Repetitive rating, pulse width limited by junction temperature T J(MAX)=175°C. Ratings are based on low frequency and duty cycles to keep initial T J =25°C.D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient.E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of T J(MAX)=175°C. The SOA curve provides a single pulse rating.G. The maximum current rating is package limited.H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C.2345678V GS (Volts)Figure 2: Transfer Characteristics (Note E)020*********12345V DS (Volts)Fig 1: On-Region Characteristics (Note E)I D (A )TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS24681051015202530V G S (V o l t s )40080012001600200024000102030405060C a p a c i t a n c e (p F )TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICSAOD4182VdsChargeGate Charge Test Circuit & WaveformResistive Switching Test Circuit & WaveformsVddVdsIdVgsBV I Unclamped Inductive Switching (UIS) Test Circuit & WaveformsARDSS2E = 1/2 LI VddAR AR。