ZXM64N03X_05中文资料

1

S E M I C O N D U C T O R S

ZXM64N03X

ISSUE 1 - OCTOBER 2005

30V N-CHANNEL ENHANCEMENT MODE MOSFET

SUMMARY

V (BR)DSS =30V; R DS(ON)

I D =5.0A

DESCRIPTION

This new generation of high density MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed.This makes them ideal for high efficiency,low voltage,power management applications.

FEATURES

•Low on-resistance •Fast switching speed •Low threshold •Low gate drive

•Low profile SOIC package

APPLICATIONS

•DC - DC converters

•Power management functions •Disconnect switches •Motor control

ORDERING INFORMATION

DEVICE REEL SIZE (inches)

TAPE WIDTH

(mm)QUANTITY PER REEL ZXM64N03XTA 712embossed 1,000

ZXM64N03XTC

13

12embossed

4,000

DEVICE MARKING

ZXM4P03

MSOP8

S S S Pin out

Top view

ZXM64N03X

S E M I C O N D U C T O R S

ISSUE 1 - OCTOBER 2005

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THERMAL RESISTANCE

PARAMETER

SYMBOL VALUE UNIT Junction to Ambient (a)R θJA 113°C/W Junction to Ambient (b)

R θJA

70

°C/W

NOTES:

(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions (b) For a device surface mounted on FR4 PCB measured at t р10 secs.

(c) Repetitive rating - pulse width limited by maximum junction temperature. Refer to Transient Thermal Impedance graph.

ABSOLUTE MAXIMUM RATINGS

PARAMETER

SYMBOL LIMIT UNIT Drain-Source Voltage V DSS 30V Gate-Source Voltage

V GS Ϯ20V Continuous Drain Current

(V GS =4.5V;T A =25°C)(b)(V GS =4.5V;T A =70°C)(b)I D 5.04.0A Pulsed Drain Current (c)

I DM 30A Continuous Source Current (Body Diode)(b)I S 2.4A Pulsed Source Current (Body Diode)(c)I SM 30A Power Dissipation at T A =25°C (a)Linear Derating Factor

P D 1.18.8W mW/°C Power Dissipation at T A =25°C (b)Linear Derating Factor

P D 1.814.4W mW/°C Operating and Storage Temperature Range

T j :T stg

-55 to +150

°C

ZXM64N03X

S E M I C O N D U C T O R S

ISSUE 1 - OCTOBER 2005

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CHARACTERISTICS

ZXM64N03X

S E M I C O N D U C T O R S

ISSUE 1 - OCTOBER 2005

4

ELECTRICAL CHARACTERISTICS (at T amb =25°C unless otherwise stated)

PARAMETER SYMBOL MIN.TYP.MAX.UNIT CONDITIONS

STATIC

Drain-Source Breakdown Voltage V (BR)DSS 30

V I D =-250µA,V GS =0V Zero Gate Voltage Drain Current I DSS 1µA V DS =30V,V GS =0V Gate-Body Leakage

I GSS ±100

nA V GS =±20V,V DS =0V Gate-Source Threshold Voltage V GS(th) 1.0

V I D

=-250µA,V DS =V GS

Static Drain-Source On-State Resistance (1)

R DS(on)0.0450.060

ΩΩV GS =10V,I D =3.7A V GS =4.5V,I D =1.9A Forward Transconductance (3)g fs

4.3S

V DS =10V,I D =-1.9A

DYNAMIC (3)Input Capacitance C iss 950pF V DS =25V,V GS =0V,f=1MHz

Output Capacitance

C oss 200pF Reverse Transfer Capacitance C rss

50

pF

SWITCHING (2)(3)Turn-On Delay Time t d(on) 4.2ns V DD =5V,I D =3.7A R G =6.2Ω,R D =4.0Ω(Refer to test circuit)

Rise Time

t r 4.5ns Turn-Off Delay Time t d(off)20.5ns Fall Time

t f 8

ns Total Gate Charge Q g 27nC V DS =24V,V GS =10V,I D =3.7A

(Refer to test circuit)Gate-Source Charge Q gs 5nC Gate Drain Charge Q gd

4.5

nC

SOURCE-DRAIN DIODE Diode Forward Voltage (1)V SD 0.95

V T j =25°C,I S =3.7A,V GS =0V

Reverse Recovery Time (3)t rr 24.5ns T j =25°C,I F =3.7A,di/dt=100A/µs

Reverse Recovery Charge(3)

Q rr

19.1

nC

(1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2%.

(2) Switching characteristics are independent of operating junction temperature.(3) For design aid only, not subject to production testing.