KSE13006_13007 NPN Silicon Transistor
三极管代换表
Power Bipolar Transistors Cross reference list”PHILIPS TYPE” REFERS TO CLOSEST PHILIPS ALTERNATIVE OR DIRECT EQUIVALENT IF AVAILABLE. Always consider the application and compare data specifications before recommending suitable Philips typeTYPE MANUFACTURER PHILIPS TYPE2SC4589HITACHI BU4525AF2SC4692HITACHI BU4530AL2SC4742HITACHI BU2508DW2SC4743HITACHI BU4508AX2SC4744HITACHI BU4508DF2SC4745HITACHI BU4515AF2SC4746HITACHI BU4523AF2SC4746A HITACHI BU4523AF2SC4747HITACHI BU4540AL2SC4789HITACHI BU4550AL2SC4796HITACHI BU2727AF2SC4797HITACHI BU2727AF2SC4877HITACHI BU4523DF2SC4879HITACHI BU2727AF2SC4880HITACHI BU4730AL2SC4897HITACHI BU4550AL2SC4927HITACHI BU4522DF2SC4928HITACHI BU4550AL2SC4962HITACHI BU2727DF2SC4963HITACHI BU2727DF2SC5058HITACHI BU4730AL2SC5067HITACHI BU4522AF2SC5068HITACHI BU4523AF2SC5105HITACHI BU4530AL2SC5132A HITACHI BU4508DF2SC5133HITACHI BU4515DX2SC5207HITACHI BU4522AF2SC5207A HITACHI BU4522AF2SC5219HITACHI BU2727DF2SC5250HITACHI BU4508DF2SC5251HITACHI BU4522AF2SC5252HITACHI BU4525AF2SC5286HITACHI BU2727AF2SC5306HITACHI BU4540AL2SC5326HITACHI BU4508AF2SC5427HITACHI BU4522AF2SC5447HITACHI BU4507AF2SC5448HITACHI BU4515AFPower Bipolar Transistors Cross reference listTYPE MANUFACTURER PHILIPS TYPE2SD2293HITACHI BU4505DX2SD2294HITACHI BU4505AX2SD2295HITACHI BU2508DW2SD2296HITACHI BU4508AX2SD2297HITACHI BU2508DW2SD2298HITACHI BU4508AX2SD2299HITACHI BU4505DF2SD2300HITACHI BU4508DF2SD2301HITACHI BU4508AF2SD2311HITACHI BU4508AF2SD2381HITACHI BU4505AF2SC5440MATSUSHITA BU4525AX2SC5456MATSUSHITA BU4530AL2SC5478MATSUSHITA BU2727AX2SC5513MATSUSHITA BU4522AX2SC5514MATSUSHITA BU4523AX2SC5515MATSUSHITA BU4530AL2SC5516MATSUSHITA BU4540AL2SD1391MATSUSHITA BU4508AX2SD1439MATSUSHITA BU4506DX2SD1440MATSUSHITA BU4505DX2SD1441MATSUSHITA BU4507DX2SD1479MATSUSHITA BU5052SD1541MATSUSHITA BU4506DF2SD1575MATSUSHITA BU4504AF2SD1576MATSUSHITA BU4505AF2SD1577MATSUSHITA BU4508AF2SD1632MATSUSHITA BU4507DF2SD1663MATSUSHITA BU4508AF2SD1727MATSUSHITA BU505DF2SD1728MATSUSHITA BU4505DX2SD1729MATSUSHITA BU4507DX2SD1730MATSUSHITA BU4507DX2SD1731MATSUSHITA BU2520DW2SD1732MATSUSHITA BU4523DW2SD1734MATSUSHITA BU505F2SD1735MATSUSHITA BU505F2SD1736MATSUSHITA BU4505AF2SD1737MATSUSHITA BU4507AF2SD1738MATSUSHITA BU4508AF2SD1739MATSUSHITA BU4522AFPower Bipolar Transistors Cross reference listTYPE MANUFACTURER PHILIPS TYPE2SD1844MATSUSHITA BU505DF2SD1845MATSUSHITA BU4505DF2SD1846MATSUSHITA BU4507DF2SD1847MATSUSHITA BU4508DF2SD1848MATSUSHITA BU4522DF2SD1849MATSUSHITA BU4523DF2SD1850MATSUSHITA BU4523AF2SD2001MATSUSHITA BU505F2SD2057MATSUSHITA BU4523DF2SD2310MATSUSHITA BU505F2SD2329MATSUSHITA BU4507AF2SD2330MATSUSHITA BU4523AF2SD2354MATSUSHITA BU4523AW2SD2367MATSUSHITA BU4504DX2SD2368MATSUSHITA BU4506AX2SD2369MATSUSHITA BU4506DX2SD2370MATSUSHITA BU4507AX2SD2371MATSUSHITA BU4508DX2SD2372MATSUSHITA BU4507AX2SD2373MATSUSHITA BU4508AX2SD2510MATSUSHITA BU4506DX2SD2511MATSUSHITA BU4506AX2SD2512MATSUSHITA BU4508DX2SD2513MATSUSHITA BU4508AX2SD2514MATSUSHITA BU4523DX2SD2515MATSUSHITA BU4523AX2SD2521MATSUSHITA BU2708DX2SD2523MATSUSHITA BU2720DXBU508MOTOROLA BU508AWBU508A MOTOROLA BU508AWBU508AD MOTOROLA BU508DWBUH100MOTOROLA“BUJ105A, BUJ106A”BUH150MOTOROLA BUJ106ABUH50MOTOROLA BUJ303ABUL146MOTOROLA BUJ105ABUL146F MOTOROLA BUJ105AXBUL147MOTOROLA BUJ105ABUL147F MOTOROLA BUJ105AXBUL44MOTOROLA BUJ101ABUL44F MOTOROLA BUJ101AXBUL45MOTOROLA BUJ103APower Bipolar Transistors Cross reference listTYPE MANUFACTURER PHILIPS TYPEBUL45F MOTOROLA BUJ103AXMJD13003MOTOROLA BUJ101MJE13003MOTOROLA BUJ101MJE13005MOTOROLA“PHE13005, BUJ103A”MJE13007MOTOROLA BUJ105AMJE13009MOTOROLA BUJ106AMJE16004MOTOROLA“BUJ202A, BUJ204A”MJE16106MOTOROLA BUJ105AMJE18002MOTOROLA“BUJ202A, BUJ301A”MJE18004MOTOROLA“BUJ202A, BUJ303A”MJE18006MOTOROLA“BUJ204A, BUJ303A”MJE18008MOTOROLA“BUJ205A, BUJ304A”MJE18009MOTOROLA“BUJ205A, BUJ304A”MJE18204MOTOROLA BUJ403AMJE18206MOTOROLA BUJ403AMJF13007MOTOROLA BUJ105AXMJF13009MOTOROLA BUJ106AXMJF16212MOTOROLA BU4525AFMJF18002MOTOROLA“BUJ202AX, BUJ301AX”MJF18004MOTOROLA“BUJ202AX, BUJ303AX”MJF18006MOTOROLA“BUJ202AX, BUJ303AX”MJF18008MOTOROLA“BUJ205AX, BUJ304AX”MJF18009MOTOROLA“BUJ205AX, BUJ304AX”MJF18204MOTOROLA BUJ403AXMJF18206MOTOROLA BUJ403AXMJH16212MOTOROLA BU4525AWMJW16212MOTOROLA BU4525AWBUT11A PHILIPS“BUT11AI, BUJ202A, BUJ303A”BUT11AF PHILIPS“BUT11XI, BUJ202AX, BUJ303AX”BUT11AX PHILIPS“BUT11XI, BUJ202AX, BUJ303AX”BUT12A PHILIPS“BUJ204A, BUJ304A”BUT12AF PHILIPS“BUJ204AX, BUJ304AX”BUT12AX PHILIPS“BUJ204AX, BUJ304AX”BUT18A PHILIPS“BUJ204A, BUJ303A, BUJ304A”BUT18AF PHILIPS“BUJ204AX, BUJ303AX, BUJ304AX”BUT18AX PHILIPS“BUJ204AX, BUJ303AX, BUJ304AX”BUT211PHILIPS“BUJ103A, BUJ204A”BUT211X PHILIPS“BUJ103AX, BUJ204AX”BUW14PHILIPS“BUJ202, BUJ301”BUW84PHILIPS“BUJ101, BUJ202”BUW85PHILIPS“BUJ202, BUJ301”Power Bipolar Transistors Cross reference listTYPE MANUFACTURER PHILIPS TYPEBUX84PHILIPS“BUJ101A, BUJ202A”BUX84F PHILIPS“BUJ101AX, BUJ202AX”BUX85PHILIPS“BUJ202A, BUJ301A”BUX85F PHILIPS“BUJ202AX, BUJ301AX”BUX86P PHILIPS“BUJ101, BUJ202”BUX87P PHILIPS“BUJ202, BUJ301”BU508ADF SAMSUNG BU508DWBU508AF SAMSUNG BU508AXBU508DF SAMSUNG BU508DXBU508F SAMSUNG BU508AXKSC2333SAMSUNG BUJ101AKSC2335SAMSUNG BUJ105AKSC2335F SAMSUNG BUJ105AXKSC2518SAMSUNG BUJ103AKSC2752SAMSUNG BUJ101KSC5020SAMSUNG BUJ301AKSC5021SAMSUNG BUJ303AKSC5021F SAMSUNG BUJ303AXKSC5027SAMSUNG BU1706AKSC5027F SAMSUNG BU1706AXKSC5029SAMSUNG BU1706AKSC5030SAMSUNG BU1706AKSC5030F SAMSUNG BU1706AXKSC5039SAMSUNG BUJ103AKSC5039F SAMSUNG BUJ103AXKSC5321SAMSUNG BUJ303AKSC5321F SAMSUNG BUJ303AXKSC5338SAMSUNG“BUJ202A, BUJ204A”KSC5338F SAMSUNG“BUJ202AX, BUJ204AX”KSD5060SAMSUNG BU505DKSD5061SAMSUNG BU4505DXKSD5062SAMSUNG BU4507DXKSD5064SAMSUNG BU505KSD5065SAMSUNG BU4505AXKSD5066SAMSUNG BU4507AXKSD5070SAMSUNG BU4504DXKSD5071SAMSUNG BU4505DXKSD5072SAMSUNG BU4507DXKSD5074SAMSUNG BU4504AXKSD5075SAMSUNG BU4505AXKSD5076SAMSUNG BU4507AXPower Bipolar Transistors Cross reference listTYPE MANUFACTURER PHILIPS TYPEKSD5078SAMSUNG BU4522AXKSD5080SAMSUNG BU4522DXKSD5086SAMSUNG BU4508DXKSD5088SAMSUNG BU4522AXKSD5089SAMSUNG BU2520AWKSD5090SAMSUNG BU2520DWKSE13004SAMSUNG BUJ103AKSE13005SAMSUNG“PHE13005, BUJ103A”KSE13005F SAMSUNG BUJ103AXKSE13006SAMSUNG BUJ105AKSE13007SAMSUNG BUJ105AKSE13007F SAMSUNG BUJ105AXKSE13008SAMSUNG BUJ106AKSE13009SAMSUNG BUJ106AKSE13009F SAMSUNG BUJ106AX2SC4023SANKEN BU2520AW2SC5002SANKEN BU4522AF2SC5003SANKEN BU4522DF2SC3681SANYO BU4507DX2SC3682SANYO BU2508DW2SC3683SANYO BU2520DW2SC3685SANYO BU4507AX2SC3686SANYO BU4508AX2SC3687SANYO BU2520AW2SC3688SANYO BU4530AW2SC3894SANYO BU4507AX2SC3895SANYO BU4508AX2SC3896SANYO BU4522AX2SC3897SANYO BU4530AL2SC3995SANYO BU4530AL2SC3996SANYO BU4530AL2SC3997SANYO BU4540AL2SC3998SANYO BU4540AL2SC4122SANYO BU4507DX2SC4123SANYO BU4508DX2SC4124SANYO BU4522DX2SC4291SANYO BU4507DX2SC4292SANYO BU2508DW2SC4293SANYO BU4507DX2SC4294SANYO BU4508DX2SC4435SANYO BU4508AXPower Bipolar Transistors Cross reference listTYPE MANUFACTURER PHILIPS TYPE2SC4436SANYO BU4515AX2SC4437SANYO BU4508AX2SC4438SANYO BU4515AX2SC4769SANYO BU4508DX2SC4770SANYO BU4508AX2SC4890SANYO BU4540AL2SC4891SANYO BU4540AL2SC4923SANYO BU4522AX2SC4924SANYO BU4522AX2SC5041SANYO BU2708DX2SC5042SANYO BU2708AX2SC5043SANYO BU2727DX2SC5044SANYO BU2727AX2SC5045SANYO BU4730AL2SC5046SANYO BU4730AL2SC5296SANYO BU4508DX2SC5297SANYO BU4522AX2SC5298SANYO BU4522AX2SC5299SANYO BU4522AX2SC5302SANYO BU4530AL2SD1396SANYO BU505D2SD1397SANYO BU4505DX2SD1398SANYO BU4507DX2SD1399SANYO BU2508DW2SD1400SANYO BU5052SD1401SANYO BU4505AX2SD1402SANYO BU4507AX2SD1403SANYO BU4508AX2SD1649SANYO BU4504DX2SD1650SANYO BU4505DX2SD1651SANYO BU4507DX2SD1652SANYO BU4508DX2SD1653SANYO BU4504AX2SD1654SANYO BU4505AX2SD1655SANYO BU4507AX2SD1656SANYO BU4508AX2SD1677SANYO BU4508AX2SD1709SANYO BU2508DW2SD1710SANYO BU4508AX2SD1711SANYO BU4508DX2SD1876SANYO BU4504DXPower Bipolar Transistors Cross reference listTYPE MANUFACTURER PHILIPS TYPE2SD1877SANYO BU4505DX2SD1878SANYO BU4507DX2SD1879SANYO BU4508DX2SD1880SANYO BU4522DX2SD1881SANYO BU4525DX2SD1882SANYO BU4504AX2SD1883SANYO BU4505AX2SD1884SANYO BU4507AX2SD1885SANYO BU4508AX2SD1886SANYO BU4522AX2SD1887SANYO BU4525AX2SD2251SANYO BU4508AX2SD2252SANYO BU4508AXBU508SANYO BU508AWBU508A SANYO BU508AWBU508D SANYO BU508DW2SC3162SHINDENGEN BUJ103A2SC3163SHINDENGEN BUJ105A2SC4051SHINDENGEN BUJ202A2SC4052SHINDENGEN BUJ202AX2SC4053SHINDENGEN BUJ204A2SC4054SHINDENGEN BUJ204AX2SC4055SHINDENGEN BUJ205A2SC4056SHINDENGEN BUJ205AX2SC4230SHINDENGEN BU1706A2SC4231SHINDENGEN BU1706AX2SC4233SHINDENGEN BU1706A2SC4234SHINDENGEN BU1706AX2SC4310SHINDENGEN BU1706A2SC4311SHINDENGEN BU1706AXT2V80HFX SHINDENGEN BU1706AT3V40F3SHINDENGEN BUJ103AT3V45FX SHINDENGEN BUJ202AT3V80HFX SHINDENGEN BU1706AT5V45FX SHINDENGEN BUJ204AT6V40F3SHINDENGEN BUJ105AT6V80HDT SHINDENGEN BU1706AT8V45FX SHINDENGEN BUJ205ATP2V80HFX SHINDENGEN BU1706AXTP3V45FX SHINDENGEN BUJ202AXTP3V80HFX SHINDENGEN BU1706AXPower Bipolar Transistors Cross reference listTYPE MANUFACTURER PHILIPS TYPETP5V45FX SHINDENGEN BUJ204AXTP6V80HDT SHINDENGEN BU1706AXTP8V45FX SHINDENGEN BUJ205AX2SD1577FI ST (SGS-THOMSON)BU4508AXBU208A ST (SGS-THOMSON)BU4508AXBU208D ST (SGS-THOMSON)BU4508AXBU505ST (SGS-THOMSON)BU505BU505ST (SGS-THOMSON)BU1706ABU508ST (SGS-THOMSON)BU508AWBU508A ST (SGS-THOMSON)BU508AWBU508AD ST (SGS-THOMSON)BU508DWBU508AFI ST (SGS-THOMSON)BU508AXBU508AXI ST (SGS-THOMSON)BU4508AZBU508D ST (SGS-THOMSON)BU508DWBU508DFI ST (SGS-THOMSON)BU508DXBU508DXI ST (SGS-THOMSON)BU4508DZBU508FI ST (SGS-THOMSON)BU508AXBUF405ST (SGS-THOMSON)BUJ204ABUH1015ST (SGS-THOMSON)BU4540AWBUH1015HI ST (SGS-THOMSON)BU4540ALBUH1215ST (SGS-THOMSON)BU4540AWBUH315ST (SGS-THOMSON)BU4506AXBUH315D ST (SGS-THOMSON)BU4506DXBUH315DXI ST (SGS-THOMSON)BU4506DZBUH315XI ST (SGS-THOMSON)BU4506AZBUH415DXI ST (SGS-THOMSON)BU4507DZBUH417ST (SGS-THOMSON)BU2708AXBUH515ST (SGS-THOMSON)BU4508AXBUH515D ST (SGS-THOMSON)BU4508DXBUH515DX1ST (SGS-THOMSON)BU4508DZBUH515FP ST (SGS-THOMSON)BU4508DZBUH515XI ST (SGS-THOMSON)BU4508AZBUH517ST (SGS-THOMSON)BU2720AXBUH517D ST (SGS-THOMSON)BU2720DXBUH615ST (SGS-THOMSON)BU4522AXBUH615D ST (SGS-THOMSON)BU4522DXBUH715ST (SGS-THOMSON)BU4523AXBUL128ST (SGS-THOMSON)BUJ103ABUL128FP ST (SGS-THOMSON)BUJ103AXBUL138ST (SGS-THOMSON)“BUJ103A, BUJ202A”BUL138FP ST (SGS-THOMSON)“BUJ103AX, BUJ202AX”Power Bipolar Transistors Cross reference listTYPE MANUFACTURER PHILIPS TYPEBUL216ST (SGS-THOMSON)BU1706ABUL26ST (SGS-THOMSON)BUJ103ABUL310ST (SGS-THOMSON)BUJ303ABUL310PI ST (SGS-THOMSON)BUJ303AXBUL381ST (SGS-THOMSON)“BUJ103A, BUJ202A”BUL382ST (SGS-THOMSON)“BUJ103A, BUJ202A”BUL410ST (SGS-THOMSON)“BUJ204A, BUJ304A”BUL416ST (SGS-THOMSON)BU1706ABUL48ST (SGS-THOMSON)“BUJ105A, BUJ204A”BUL510ST (SGS-THOMSON)BUJ304ABUL57ST (SGS-THOMSON)BUJ105ABUL57PI ST (SGS-THOMSON)BUJ105AXBUL59ST (SGS-THOMSON)BUJ204ABUL67ST (SGS-THOMSON)BUJ106ABUL810ST (SGS-THOMSON)BUJ305ABUL87ST (SGS-THOMSON)BUJ106ABULK26ST (SGS-THOMSON)BUJ103BULK381ST (SGS-THOMSON)“BUJ103, BUJ202”BULK382ST (SGS-THOMSON)“BUJ103, BUJ202”BULT118ST (SGS-THOMSON)BUJ101S2000AFI ST (SGS-THOMSON)BU4508AXS2000AXI ST (SGS-THOMSON)BU4508AZSGSF323ST (SGS-THOMSON)“BUJ202A, BUJ303A”SGSF343ST (SGS-THOMSON)“BUJ204A, BUJ304A”ST13003ST (SGS-THOMSON)BUJ101ST13005ST (SGS-THOMSON)“PHE13005, BUJ103A”ST13007ST (SGS-THOMSON)BUJ105AST1802HI ST (SGS-THOMSON)BU4507AXST1803DHI ST (SGS-THOMSON)BU4507DXST2001HI ST (SGS-THOMSON)BU4515AXTHD200FI ST (SGS-THOMSON)BU4525AXTHD215HI ST (SGS-THOMSON)BU4522AXTHD218DHI ST (SGS-THOMSON)BU4507DXTHD277HI ST (SGS-THOMSON)BU4507AXTHD300ST (SGS-THOMSON)BU4540AWBU508TELEFUNKEN BU508AWBU508A TELEFUNKEN BU508AWBU508AD TELEFUNKEN BU508DWBU508D TELEFUNKEN BU508DWBU508DR TELEFUNKEN BU508DWBU705TELEFUNKEN BU505Power Bipolar Transistors Cross reference listTYPE MANUFACTURER PHILIPS TYPEBU908TELEFUNKEN BU4506AX2SC3884A TOSHIBA BU4508AX2SC3885A TOSHIBA BU4515AX2SC3886A TOSHIBA BU4522AX2SC3887A TOSHIBA BU4508AX2SC3888A TOSHIBA BU4515AX2SC3889A TOSHIBA BU2520AW2SC3892A TOSHIBA BU4508DX2SC3893A TOSHIBA BU4522DX2SC4288A TOSHIBA BU4540AL2SC4289A TOSHIBA BU4540AL2SC4290A TOSHIBA BU4550AL2SC4531TOSHIBA BU4523DX2SC4532TOSHIBA BU4730AL2SC4542TOSHIBA BU4525AX2SC4560TOSHIBA BU4525AW2SC4757TOSHIBA BU4515AX2SC4758TOSHIBA BU4522AX2SC4759TOSHIBA BU4525AX2SC4761TOSHIBA BU2722AX2SC4762TOSHIBA BU4508DX2SC4763TOSHIBA BU4522DX2SC4764TOSHIBA BU4507DX2SC4765TOSHIBA BU2708DX2SC4766TOSHIBA BU2720DX2SC4806TOSHIBA BU2708AX2SC4830TOSHIBA BU4508AX2SC4916TOSHIBA BU4508DX2SC5048TOSHIBA BU4523AX2SC5129TOSHIBA BU4515AX2SC5142TOSHIBA BU4550AL2SC5143TOSHIBA BU2727DX2SC5148TOSHIBA BU4508AX2SC5149TOSHIBA BU4508DX2SC5150TOSHIBA BU2727AX2SC5331TOSHIBA BU4530AL2SC5332TOSHIBA BU2727AW2SC5339TOSHIBA BU4508DX2SC5386TOSHIBA BU4515AX2SC5387TOSHIBA BU4522AX2SC5404TOSHIBA BU4522AXPower Bipolar Transistors Cross reference listTYPE MANUFACTURER PHILIPS TYPE2SC5421TOSHIBA BU4530AL2SC5422TOSHIBA BU4730AL2SC5445TOSHIBA BU4540AL2SD1425TOSHIBA BU505D2SD1426TOSHIBA BU4506DX2SD1427TOSHIBA BU4507DX2SD1428TOSHIBA BU2508DW2SD1429TOSHIBA BU5052SD1430TOSHIBA BU4506AX2SD1431TOSHIBA BU4507AX2SD1432TOSHIBA BU4508AX2SD1433TOSHIBA BU2520AW2SD1543TOSHIBA BU4504AX2SD1544TOSHIBA BU4506AX2SD1545TOSHIBA BU4507AX2SD1546TOSHIBA BU4508AX2SD1547TOSHIBA BU4522AX2SD1553TOSHIBA BU4504DX2SD1554TOSHIBA BU4506DX2SD1555TOSHIBA BU4507DX2SD1556TOSHIBA BU4508DX2SD2089TOSHIBA BU4504DX2SD2095TOSHIBA BU4507DX2SD2125TOSHIBA BU4508DX2SD2253TOSHIBA BU2720DX2SD2348TOSHIBA BU4522DX2SD2349TOSHIBA BU4523DX2SD2428TOSHIBA BU2725DW2SD2454TOSHIBA BU2720DX2SD2498TOSHIBA BU4508AX2SD2499TOSHIBA BU4508DX2SD2500TOSHIBA BU4523AX2SD2539TOSHIBA BU4522DX2SD2550TOSHIBA BU2708DX2SD2551TOSHIBA BU2720DX2SD2552TOSHIBA BU2720DX2SD2553TOSHIBA BU2725DX2SD818TOSHIBA BU5052SD819TOSHIBA BU4506AX2SD820TOSHIBA BU4507AX2SD821TOSHIBA BU4508AXPower Bipolar Transistors Cross reference listTYPE MANUFACTURER PHILIPS TYPE2SD822TOSHIBA BU2520AW2SD868TOSHIBA BU505D2SD869TOSHIBA BU4506DX2SD870TOSHIBA BU4507DX2SD871TOSHIBA BU2508DWS2000TOSHIBA BU4508AXS2000A TOSHIBA BU4508AXS2000AF TOSHIBA BU4508AXS2000F TOSHIBA BU4508AXS2055TOSHIBA BU2508DWS2055A TOSHIBA BU2508DWS2055AF TOSHIBA BU4508DXS2055F TOSHIBA BU4508DXS2818TOSHIBA BU2508DWS2818A TOSHIBA BU2508DWBUD600VISHAY/ SILICONIX BUJ101BUD620VISHAY/ SILICONIX BUJ103BUD630VISHAY/ SILICONIX“BUJ103, BUJ105”BUD636A VISHAY/ SILICONIX“BUJ202, BUJ303”BUD86VISHAY/ SILICONIX“BUJ101, BUJ202”BUD87VISHAY/ SILICONIX“BUJ202, BUJ301”BUF620VISHAY/ SILICONIX BUJ103ABUF630VISHAY/ SILICONIX“BUJ103A, BUJ105A”BUF636A VISHAY/ SILICONIX“BUJ202A, BUJ303A”BUF640A VISHAY/ SILICONIX“BUJ204A, BUJ303A”BUF642VISHAY/ SILICONIX BUJ204ABUF644VISHAY/ SILICONIX BUJ105ABUF646A VISHAY/ SILICONIX“BUJ204A, BUJ304A”BUF650VISHAY/ SILICONIX“BUJ105A, BUJ106A”BUF654VISHAY/ SILICONIX BUJ106ABUF742VISHAY/ SILICONIX BUJ303ABUF744VISHAY/ SILICONIX BUJ105ATD13002VISHAY/ SILICONIX BUJ101TD13003VISHAY/ SILICONIX BUJ101TD13004VISHAY/ SILICONIX BUJ103TD13005VISHAY/ SILICONIX BUJ103TE13004VISHAY/ SILICONIX“PHE13005, BUJ103A”TE13005VISHAY/ SILICONIX“PHE13005, BUJ103A”TE13008VISHAY/ SILICONIX BUJ106ATE13009VISHAY/ SILICONIX BUJ106A。
MJE13007-TO-262和263
1
Shenzhen SI Semiconductors Co., LTD.
MJE 系列晶体管/MJE SERIES TRANSISTORS
Product Specification
MJE(DC)
1
0.1
0.01 1
hFE 100
10
100 Vce(v) 1000
hFE - Ic
最大值 max 4.8 2.8
1.8 0.7 1.4 9.6
符号 SYMBOL
e e1 E L L1 L2
最小值 min
12.5
单位：毫米/UNIT：mm
典型值
最大值
nom
max
2.54
5.3
10.7
14.5
6.3
1.5
Si semiconductors 2007.01
3
Shenzhen SI Semiconductors Co., LTD.
4.72
E
8.99
9.29
1.22
1.32
e1
2.44
2.64
0.76
0.86
e2
4.98
5.18
1.22
1.32
L1
15.19
15.79
0.33
0.43
L2
1.94
2.19
1.22
1.32
L3
……
……
9.95
10.25
Si semiconductors 2007.01
4
Product Specification
符号 SYMBOL
A B b b1 b2 C D
TO-263 封装机械尺寸
华汕电子 13009A 晶体管芯片 产品说明书
NPN SILICON TRANSISTOR
13009A 晶体管芯片
█ 芯片简介
█ 管芯示意图
芯片尺寸：4 英寸（100mm） 芯片代码：D400AG-00 芯片厚度：240±20µm 管芯尺寸：4000×4000µm 2 焊位尺寸：B 极 783×1100µm 2，E 极 754×1276µm 2 电极金属：铝 背面金属：钒-镍-银 典型封装：KSH13009
最小值 400 10 6
4
典型值 180
最大值
1 40 30 1 1.5 3 1.2 1.6
1.1 3.0 0.7
单位 V mA
V V V V V pF MHz µS 0 VEB=9V，IC=0 VCE=5V，IC=5A VCE=5V，IC=8A IC=5A，IB=1A IC=8A，IB=1.6A IC=12A，IB=3A IC=5A，IB=1A IC=8A，IB=1.6A VCB=10V，f=0.1MHz VCE=10V，IC=0.5A
█ 极限值（Ta=25℃）（封装形式：TO-220）
Tstg——贮存温度………………………………… -65~150℃ Tj——结温……………………………………………… 150℃ PC——集电极耗散功率（Tc=25℃）………………… 100W VCBO——集电极—基极电压…………………………… 700V VCEO——集电极—发射极电压………………………… 400V VEBO——发射极—基极电压…………………………………9V IC——集电极电流（DC）…………………………………12A IB——基极电流………………………………………………6A
VCC=125V，IC=8A IB1=-IB2=1.6A
█ 电参数（Ta=25℃）（封装形式：TO-220）
KSE13003 NPN Silicon Transistor
KSE13003 NPN SILICON TRANSISTORHIGH VOLTAGE SWITCH MODE APPLICATIONS• High Speed Switching• Suitable for Switching Regulator and Motor ControlABSOLUTE MAXIMUM RATINGSELECTRICAL CHARACTERISTICS (Tc=25&)%Pulse Test : Pulse Width=5ms, Duty Cycle 10%CharacteristicSymbol Rating Unit Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Base CurrentCollector Dissipation (T C =25&) Junction Temperature Storage TemperatureV CBO V CEO V EBO I C I C I B P C T J T STG700400 91.5 30.75 20150-65 ~ 150V V V A A A W &&CharacteristicSymbol Test Condition Min Typ Max Unit %Collector- Base Breakdown Voltage Emitter- Base Breakdown Voltage%DC Current Gain%Collector Emitter Saturation Voltage%Base Emitter Saturation Voltage Output CapacitanceCurrent Gain Bandwidth Product Turn On Time Storage Time Fall TimeV CEO (sus) I EBO h FE V CE (sat)V BE (sat) C OB f T t ON t STG t FI C = 5mA, I B = 0 V EB = 9V, I C = 0 V CE = 2V, I C = 0.5A V CE = 2V, I C =1A I C = 0.5A, I B = 0.1A I C = 1A, I B = 0.25A I C = 1.5A, I B = 0.5AI C = 0.5A, I B = 0.1A I C = 1A, I B = 0.25A V CB = 10V , f = 0.1MHz V CE = 10V, I C = 0.1A V CC =125V, I C = 1AI B1 = 0.2A, I B2 = -0.2A4008 542110400.5 1 3 11.21.14.00.7V uAV V V V V pF MHzuS uS uS1 . Emitter 2. Collector 3. BaseTO-126©1999 Fairchild Semiconductor CorporationRev. BTRADEMARKSACEx™CoolFET™CROSSVOLT™E 2CMOS TM FACT™FACT Quiet Series™FAST ®FASTr™GTO™HiSeC™The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.LIFE SUPPORT POLICYFAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORTDEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROV AL OF FAIRCHILD SEMICONDUCTOR CORPORA TION.As used herein:ISOPLANAR™MICROWIRE™POP™PowerTrench™QS™Quiet Series™SuperSOT™-3SuperSOT™-6SuperSOT™-8TinyLogic™1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant intothe body, or (b) support or sustain life, or (c) whosefailure to perform when properly used in accordancewith instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user.2. A critical component is any component of a lifesupport device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status DefinitionAdvance InformationPreliminary No Identification Needed Obsolete This datasheet contains the design specifications for product development. Specifications may change in any manner without notice.This datasheet contains preliminary data, andsupplementary data will be published at a later date.Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor.The datasheet is printed for reference information only.Formative or In DesignFirst ProductionFull ProductionNot In ProductionDISCLAIMERFAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY , FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.UHC™VCX™。
KSE13003H2ASTU;KSE13003TH2ATU;KSE13003TH1ATU;KSE13003H1ASTU;KSE13003H1AS;中文规格书,Datasheet资料
Figure 4. Switching Time
10
30
ICMAX. (pulse)
ms 10
25
s 1m
IC[A], COLLECTOR CURRENT
PC[W], POWER DISSIPATION
IC MAX. (DC)
1
s 5m
s 0m 10
20
15
0.1
10
5
0.01
0
1
10
100
1000
Figure 6. Power Derating
/
KSE13003 NPN Silicon Transistor
© 2007 Fairchild Semiconductor Corporation KSE13003 Rev. 1.0.0 4
hFE Classification
Classification
hFE*
* Test on VCE = 2V, IC = 0.5A.
H1
9 ~ 16
H2
14~ 21
H3
19 ~ 26
© 2007 Fairchild Semiconductor Corporation KSE13003 Rev. 1.0.0 1
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES_1: 1) These ratings are based on a maximum junction temperature of 150°C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
常用三极管引脚参数排列表
常用三极管引脚参数排
列表
The document was finally revised on 2021
L火线 N零线
色环电阻的识别方法：
棕1，红2，橙3，黄4，绿5，蓝6，紫7，灰8，白9，黑0，这是色环电阻的代表数字。
4环电阻，一二位数值位，第3位为倍率（什么颜色就是10的几次方），第4位为误差位。
5环电阻，一二三位数值位，第4位为倍率，第5位为误差位。
四环色环电阻的误差：只有”金“、”银“，金表示5%，银表示10%。
五环色环电阻的误差：棕表示1%，红表示2%，灰表示%，白表示环保电阻，绿表示%，蓝表示%，紫表示%，金表示5%，银表示10%
例如，4环电阻表示10K电阻，综黑橙金（10*10的3次方，5%误差）
4环电阻表示10K电阻，综黑黑红棕（100*10的2次方，1%误差）
数字电阻的表示方法为：最后一位数表示倍率，而前几位为数值位。
滤波电容的选择：
经验公式：C=(3~5)×(T/2)÷R
R：输出电压与最大输出电流的比值。
T：为交流电周期。
电容降压后的电流计算应按容抗来计算既：Xc = 1/（ω C）= 1/（2 π f C）
常见器耐压的标注是采用一个数字和一个字母组合而成。
数字表示10的幂指数，值，单位是V（伏）。
字母=数值
A= B=1.25 C= D= E=2.5 F=3.15 G= H= J= K= Z=
例如：
2A代表 *100=100V （即乘以10的2次冥）
1J代表 *10=63V
常用三极管。
MJL21193 D和MJL21194 Silicon Power Transistors的数据手册
MJL21193 (PNP),MJL21194 (NPN)Silicon Power TransistorsThe MJL21193 and MJL21194 utilize Perforated Emitter technology and are specifically designed for high power audio output,disk head positioners and linear applications.Features•Total Harmonic Distortion Characterized •High DC Current Gain •Excellent Gain Linearity •High SOA•These Devices are Pb −Free and are RoHS Compliant*MAXIMUM RATINGSRatingSymbol Value Unit Collector −Emitter Voltage V CEO 250Vdc Collector −Base Voltage V CBO 400Vdc Emitter −Base VoltageV EBO5Vdc Collector −Emitter Voltage − 1.5 V V CEX 400Vdc Collector Current −Continuous I C 16Adc Collector Current −Peak (Note 1)I CM 30Adc Base Current − ContinuousI B 5Adc Total Power Dissipation @ T C = 25_C Derate above 25_CP D 2001.43W W/_C Operating and Storage Junction Temperature RangeT J , T stg−65 to +150_CStresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.1.Pulse Test: Pulse Width = 300 m s, Duty Cycle ≤2%THERMAL CHARACTERISTICSCharacteristicSymbol Max Unit Thermal Resistance, Junction −to −CaseR q JC0.7_C/W*For additional information on our Pb −Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.x =3 or 4A = Assembly Location YY =YearWW =Work WeekG= Pb −Free PackageDevice Package Shipping †ORDERING INFORMATIONMJL21193G TO −264(Pb −Free)25 Units / Rail MJL21194GTO −264(Pb −Free)25 Units / Rail†For information on tape and reel specifications,including part orientation and tape sizes, please refer to our T ape and Reel Packaging Specifications Brochure, BRD8011/D.16 AMPERE COMPLEMENTARYSILICON POWER TRANSISTORS 250 VOLTS, 200 WATTSMJL2119x AYYWWGTO −264CASE 340G STYLE 2MARKING DIAGRAM1BASE2 COLLECTOR 3EMITTER 311PNPNPNELECTRICAL CHARACTERISTICS (T C = 25°C unless otherwise noted)CharacteristicSymbolMinTypMaxUnitOFF CHARACTERISTICSCollector −Emitter Sustaining Voltage (I C = 100 mAdc, I B = 0)V CEO(sus)250−−Vdc Collector Cutoff Current (V CE = 200 Vdc, I B = 0)I CEO −−100m Adc Emitter Cutoff Current (V CE = 5 Vdc, I C = 0)I EBO −−100m Adc Collector Cutoff Current(V CE = 250 Vdc, V BE(off) = 1.5 Vdc)I CEX−−100m AdcSECOND BREAKDOWNSecond Breakdown Collector Current with Base Forward Biased (V CE = 50 Vdc, t = 1 s (non −repetitive)(V CE = 80 Vdc, t = 1 s (non −repetitive)I S/b4.02.25−−−−AdcON CHARACTERISTICS DC Current Gain(I C = 8 Adc, V CE = 5 Vdc)(I C = 16 Adc, I B = 5 Adc)h FE258−−75−Base −Emitter On Voltage (I C = 8 Adc, V CE = 5 Vdc)V BE(on)−−2.2Vdc Collector −Emitter Saturation Voltage (I C = 8 Adc, I B = 0.8 Adc)(I C = 16 Adc, I B = 3.2 Adc)V CE(sat)−−−−1.44VdcDYNAMIC CHARACTERISTICSTotal Harmonic Distortion at the OutputV RMS = 28.3 V, f = 1 kHz, P LOAD = 100 W RMS h FEunmatched (Matched pair h FE = 50 @ 5 A/5 V)h FE matchedT HD−−0.80.08−−%Current Gain Bandwidth Product(I C = 1 Adc, V CE = 10 Vdc, f test = 1 MHz)f T 4−−MHz Output Capacitance(V CB = 10 Vdc, I E = 0, f test = 1 MHz)C ob−−500pF I C COLLECTOR CURRENT (AMPS)Figure 1. Typical Current Gain Bandwidth Product Figure 2. Typical Current Gain Bandwidth Productf , C U R R E N T G A I N B A N D W I D T H P R O D U C T (M H z )TPNP MJL21193f , C U R R E N T G A I N B A N D W I D T H P R O D U C T (M H z )T NPN MJL21194I C COLLECTOR CURRENT (AMPS)6.56.05.55.04.54.03.53.08.07.0V CE , COLLECTOR-EMITTER VOLTAGE (VOLTS)I C , C O L L E C T O R C U R R E N T (A )NPN MJL211945.0Figure 3. DC Current Gain, V CE = 20 VFigure 4. DC Current Gain, V CE = 20 VFigure 5. DC Current Gain, V CE = 5 V Figure 6. DC Current Gain, V CE = 5 Vh F E , D C C U R R E N T G A I NI C COLLECTOR CURRENT (AMPS)I C COLLECTOR CURRENT (AMPS)h F E , D C C U R R E N T G A I Nh F E , D C C U R R E N T G A I NI C COLLECTOR CURRENT (AMPS)I C COLLECTOR CURRENT (AMPS)V CE , COLLECTOR-EMITTER VOLTAGE (VOLTS)Figure 7. Typical Output CharacteristicsI C , C O L L E C T O R C U R R E N T (A )Figure 8. Typical Output Characteristicsh F E , D C C U R R E N T G A I NPNP MJL21193PNP MJL21193NPN MJL21194100010010100010010100010010V B E (o n ), B A S E -E M I T T E R V O L T A G E (V O L T S )Figure 9. Typical Saturation Voltages I C , COLLECTOR CURRENT (AMPS)S A T U R A T I O N V O L T A G E (V O L T S )Figure 10. Typical Saturation VoltagesI C , COLLECTOR CURRENT (AMPS)S A T U R A T I O N V O L T A G E (V O L T S )Figure 11. Typical Base −Emitter Voltage I C , COLLECTOR CURRENT (AMPS)Figure 12. Typical Base −Emitter VoltageI C , COLLECTOR CURRENT (AMPS)V B E (o n ), B A S E -E M I T T E R V O L T A G E (V O L T S )There are two limitations on the power handling ability of a transistor; average junction temperature and secondary breakdown. Safe operating area curves indicate I C − V CE lim-its of the transistor that must be observed for reliable opera-tion; i.e., the transistor must not be subjected to greater dissip-ation than the curves indicate.The data of Figure 13 is based on T J(pk) = 150°C; T C is vari-able depending on conditions. At high case temperatures,thermal limitations will reduce the power than can be handled to values less than the limitations imposed by second break-down.PNP MJL21193NPN MJL21194Figure 13. Active Region Safe Operating AreaV CE , COLLECTOR-EMITTER VOLTAGE (VOLTS)I C , C O L L E C T O R C U R R E N T (A M P S )3.02.52.01.51.00.501.41.21.00.80.60.40.20101.00.1100101.00.1Figure 14. MJL21193 Typical Capacitance V R , REVERSE VOLTAGE (VOLTS)C , C A P A C I T A N C E (p F )Figure 15. MJL21194 Typical CapacitanceV R , REVERSE VOLTAGE (VOLTS)C , C A P A C I T A N C E (p F )8.0 WFigure 16. Typical Total Harmonic DistortionFigure 17. Total Harmonic Distortion Test CircuitFREQUENCY (Hz)T H D , T O T A L H A R M O N I C D I S T O R T I O N (%)1.21.11.00.90.80.70.610000010000100010010STYLE 1:PIN 1.GATE2.DRAIN3.SOURCE STYLE 2:PIN 1.BASE2.COLLECTOR3.EMITTER STYLE 3:PIN 1.GATE2.SOURCE3.DRAINSTYLE 4:PIN 1.DRAIN2.SOURCE3.GATEDIM A MIN MAX MIN MAX INCHES28.029.0 1.102 1.142MILLIMETERS B 19.320.30.7600.800C 4.7 5.30.1850.209D 0.93 1.480.0370.058E 1.9 2.10.0750.083F 2.2 2.40.0870.102G 5.45 BSC 0.215 BSC H 2.6 3.00.1020.118J 0.430.780.0170.031K 17.618.80.6930.740L 11.2 REF 0.411 REF N 4.35 REF 0.172 REF P 2.2 2.60.0870.102Q 3.1 3.50.1220.137R 2.25 REF0.089 REF U 6.3 REF 0.248 REF W2.83.20.1100.125NOTES:1.DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.2.CONTROLLING DIMENSION: MILLIMETER.STYLE 5:PIN 1.GATE2.COLLECTOR3.EMITTER0.25 (0.010) M T BSSCALE 1:2TO −3BPL (TO −264)CASE 340G−02ISSUE JDATE 17 DEC 2004GENERICMARKING DIAGRAM**This information is generic. Please refer to device data sheet for actual part marking.Pb −Free indicator, “G” or microdot “ G ”,may or may not be present.XXXXXX AYYWWXXXXXX = Specific Device Code A = Location Code YY = YearWW = Work WeekMECHANICAL CASE OUTLINEPACKAGE DIMENSIONSON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor theADDITIONAL INFORMATIONTECHNICAL PUBLICATIONS:Technical Library:/design/resources/technical−documentation onsemi Website: ONLINE SUPPORT: /supportFor additional information, please contact your local Sales Representative at /support/sales。
KSC5603DTU;KSC5603D;中文规格书,Datasheet资料
* Pulse Test: Pulse Width=5ms, Duty Cycle<10%Thermal Characteristics T A = 25°C unless otherwise notedI C Collector Current (DC)3A I CP *Collector Current (Pulse)6A I B Base Current (DC)2A I BP *Base Current (Pulse)4A P C Power Dissipation(T C =25°C)100W T JJunction Temperature150°C T STG Storage Temperature-65 to +150°CSymbolParameterRatingUnitsR θJC Thermal ResistanceJunction to Case 1.25°C/W R θJA Junction to Ambient80°C/W T LMaximun Lead Temperature for Soldering Purpose : 1/8” from Case for 5 seconds270°CI C=2A, I B=0.4A T A=25°C0.85 1.2VT A=125°C0.74 1.1V C ib Input Capacitance V EB=10V, I C=0, f=1MHz7451000pF C ob Output Capacitance V CB=10V, I E=0, f=1MHz56500pF f T Current Gain Bandwidth Product I C=0.1A,V CE=10V5MHz V F Diode Forward Voltage I F=0.4A T A=25°C0.76 1.2VT A=125°C VI F=1A T A=25°C0.83 1.5VT A=125°C VI B2=250mA, Vz=300V,L C =200H t STG Storage Time T A =25°C 140175ns T A =125°C ns t FFall TimeT A =25°C 170200ns T A =125°CnsThe following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is notAccuPower¥Auto-SPM¥Build it Now¥CorePLUS¥CorePOWER¥CROSSVOLT¥CTL¥Current Transfer Logic¥DEUXPEED®Dual Cool™ EcoSPARK®EfficientMax¥®Fairchild®Fairchild Semiconductor®FACT Quiet Series¥FACT®FAST®FastvCore¥FETBench¥FlashWriter®*FPS¥F-PFS¥FRFETGlobal Power Resource SMGreen FPS¥Green FPS¥ e-Series¥G max¥GTO¥IntelliMAX¥ISOPLANAR¥MegaBuck¥MICROCOUPLER¥MicroFET¥MicroPak¥MicroPak2¥MillerDrive¥MotionMax¥Motion-SPM¥OptoHiT™OPTOLOGIC®OPTOPLANAR®®PDP SPM™Power-SPM¥PowerTrenchPowerXS™Programmable Active Droop¥QFET®QS¥Quiet Series¥RapidConfigure¥¥Saving our world, 1mW/W/kW at a time™SignalWise¥SmartMax¥SMART START¥SPM®STEALTH¥SuperFET¥SuperSOT¥-3SuperSOT¥-6SuperSOT¥-8SupreMOS¥SyncFET¥Sync-Lock™®*The Power FranchiseTinyBoost¥TinyBuck¥TinyCalc¥TinyLogic®TINYOPTO¥TinyPower¥TinyPWM¥TinyWire¥TriFault Detect¥TRUECURRENT¥*P SerDes¥UHC®Ultra FRFET¥UniFET¥VCX¥VisualMax¥XS™* Trademarks of System General Corporation, used under license by Fairchild Semiconductor.DISCLAIMERFAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.LIFE SUPPORT POLICYFAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.As used herein:1. Life support devices or systems are devices or systems which, (a) areintended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. A critical component in any component of a life support, device, orsystem whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.ANTI-COUNTERFEITING POLICYFairchild Semiconductor Corporation's Anti-Counterfeiting Policy. Fairchild's Anti-Counterfeiting Policy is also stated on our external website, , under Sales Support.Counterfeiting of semiconductor parts is a growing problem in the industry. All manufacturers of semiconductor products are experiencing counterfeiting of their parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed applications, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild's quality standards for handling and storage and provide access to Fairchild's full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address any warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors.PRODUCT STATUS DEFINITIONSDefinition of TermsDatasheet Identification Product Status Definition分销商库存信息:FAIRCHILDKSC5603DTU KSC5603D。
KSE13007中文资料
KSE13006/13007KSE13006/13007TRADEMARKSThe following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.ACEx™Bottomless™CoolFET™CROSSVOLT™E2CMOS™FACT™FACT Quiet Series™FAST®FASTr™GTO™HiSeC™ISOPLANAR™MICROWIRE™POP™PowerTrench®QFET™QS™Quiet Series™SuperSOT™-3SuperSOT™-6SuperSOT™-8SyncFET™TinyLogic™UHC™VCX™DISCLAIMERFAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.LIFE SUPPORT POLICYFAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR INTERNATIONAL.As used herein:1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user.2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.PRODUCT STATUS DEFINITIONSDefinition of TermsDatasheet Identification Product Status DefinitionAdvance Information Formative or InDesign This datasheet contains the design specifications for product development. Specifications may change in any manner without notice.Preliminary First Production This datasheet contains preliminary data, andsupplementary data will be published at a later date.Fairchild Semiconductor reserves the right to makechanges at any time without notice in order to improvedesign.No Identification Needed Full Production This datasheet contains final specifications. FairchildSemiconductor reserves the right to make changes atany time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a productthat has been discontinued by Fairchild semiconductor.The datasheet is printed for reference information only.。
MJE13008
MJE13008、MJE13009MJE13008、MJE13009是硅NPN型大功率高速开关三极管，具有耐压高、开关速度快、耗散功率大、电流特性好等特点。
主要用于开关电源、电机控制等功率开关电路中。
MJE13008/13009采用TO-220封装，它们的引脚排列如图所示其中集电极C与散热片是相连的。
MJE13008/13009主要参数：C-B最高反向耐压VCBO：MJE13008:600V; MJE13009:700VC-E最高反向耐压VCEO：MJE13008:300V; MJE13009:400VE-B最高反向耐压VEBO：9V集电极最大平均电流IC：12A集电极最大耗散功率PC：100W最高结温Tj：150℃贮存温度TSTG：-65~150℃直流放大系数HFE：6~40特征频率fT：4MHzMJE13006、MJE13007MJE13006、MJE13007是高反压大功率开关三极管，硅材料NPN型，适用于开关稳压器、电子变压器、电机控制等功率开关电路。
MJE13006/13007采用TO-220外形封装，管脚排列如图所示管脚排列：１.基极；２.集电极；３.发射极MJE13006/13007的极限值参数：集电极-基极电压VCBO：MJE13006: 600V；MJE13007: 700V集电极-发射极电压VCEO：MJE13006: 300V；MJE13007: 400V发射极-基极电压VEBO：9V集电极电流IC：8A集电极耗散功率PC：80W (Tc=25℃)结温Tj：150℃贮藏温度TSTG：-65~150℃MJE13006/13007电参数：集电极-发射极反向击穿电压BVCEO：MJE13006 300V; MJE13007 400V (IC=10mA; IB=0)直流放大倍数HFE：5~60特征频率fT：4MHzMJE13005MJE13005是高反压高速开关三极管，主要用于大功率节能灯及荧光灯电子镇流器、开关电源、电子变压器及功率开关转换电路等。
Multisim里的NPN三极管参数资料大全
提醒您:你可以按Ctrl+F来查找你想要的资料.如你想查找频率敏感的三极管,那么你可以搜索关键词:"MHz"晶体管型号：2N1711(S)生产厂家：德国AEG公司，DIT，德国椤茨标准电器公司制作材料：Si-NPN性质：通用型（Uni）封装形式：直插封装极限工作电压：75V最大电流允许值：0.5A最大耗散率：0.8W放大倍数：未知放大倍数最大工作频率：>70MHZ引脚数： 3可代换的型号：BC140,BC141,BC300,BC301,2N1990,晶体管型号：2N2102(A.L.S)生产厂家：美国国民半导体公司，美国无线电公司，SEM，美国得克萨斯仪表公司，德国凡尔伏公司制作材料：Si-NPN性质：低频或音频放大（LF），开关管（S）封装形式：直插封装极限工作电压：120V最大电流允许值：1A最大耗散率：1W放大倍数：未知放大倍数最大工作频率：>120MHZ引脚数： 3可代换的型号：BC300,BSS42,BSS43,BSV84,BSW67,BSX47,2N2243,2N2405,2N3019,2N3020,3DK03E,晶体管型号：2N2218(A)生产厂家：SEM，德国电子元件股份公司，美国得克萨斯仪表公司，美国晶体管有限公司，德国凡尔伏公司制作材料：Si-NPN性质：通用型（Uni）封装形式：直插封装极限工作电压：60V最大电流允许值：0.8A最大耗散率：0.8W放大倍数：β>40最大工作频率：<1MHZ或者未知工作频率引脚数： 3可代换的型号：BC141,BC301,BFX96A,BSW51,BSW52,BSW53,BSW54,BSX45,BSX59,BSX60,BSX61,2N3444,3DK3 D,晶体管型号：2N2219生产厂家：德国AEG公司，DIT，美国、法国费兰第有限公司，美国通用电器公司，德国椤茨标准电器公司，美国摩托罗拉半导体公司制作材料：Si-NPN性质：通用型（Uni）封装形式：直插封装极限工作电压：60V最大电流允许值：0.8A最大耗散率：0.8W放大倍数：β300最大工作频率：<1MHZ或者未知工作频率引脚数： 3可代换的型号：BC140,BC302,BFX97,BSW52,BSX45,3DK3D,晶体管型号：2N2219(A)生产厂家：SEM，德国电子元件股份公司，美国得克萨斯仪表公司，美国晶体管有限公司，德国凡尔伏公司制作材料：Si-NPN性质：通用型（Uni）封装形式：直插封装极限工作电压：60V最大电流允许值：0.8A最大耗散率：0.8W放大倍数：β>100最大工作频率：<1MHZ或者未知工作频率引脚数： 3可代换的型号：BC141,BC301,BFX97A,BSW51,BSW52,BSW53,BSW54,BSX45,BSX59,BSX60,BSX61,2N3444,3DK3 D,晶体管型号：2221生产厂家：未知生产厂家制作材料：Si-NPN性质：通用型（Uni）封装形式：直插封装极限工作电压：60V最大电流允许值：0.8A最大耗散率：0.625W放大倍数：β=40-120最大工作频率：<1MHZ或者未知工作频率引脚数： 3可代换的型号：2N2221,晶体管型号：2N2222生产厂家：德国AEG公司，DIT，美国、法国费兰第有限公司，美国通用电器公司，德国椤茨标准电器公司，美国摩托罗拉半导体公司制作材料：Si-NPN性质：通用型（Uni）封装形式：直插封装极限工作电压：60V最大电流允许值：0.8A最大耗散率：0.5W放大倍数：β=300最大工作频率：<1MHZ或者未知工作频率引脚数： 3可代换的型号：BC546,BC639,BFX95,BSW62,BSW85,3DK3D,3DG2222,晶体管型号：2N2222A生产厂家：SEM，德国电子元件股份公司，美国得克萨斯仪表公司，美国晶体管有限公司，德国凡尔伏公司制作材料：Si-NPN性质：通用型（Uni）封装形式：直插封装极限工作电压：60V最大电流允许值：0.8A最大耗散率：0.5W放大倍数：β>100最大工作频率：<1MHZ或者未知工作频率引脚数： 3可代换的型号：BC546,BC637,BFX95A,BSS40,BSS41,BSW61,BSW62,BSW63,BSW64,BSW85,2N4014,3DK3D,晶体管型号：2N2369(A)生产厂家：DIT，德国椤茨标准电器公司，美国摩托罗拉半导体公司，美国晶体管有限公司，德国凡尔伏公司制作材料：Si-NPN性质：高速开关（SS）封装形式：直插封装极限工作电压：40V最大电流允许值：0.2A最大耗散率：0.36W放大倍数：β>40最大工作频率：<1MHZ或者未知工作频率引脚数： 3可代换的型号：BSS10,BSS11,BSS12,BSV59,BSX19,BSX20,BSX39,BSX87,BSX88,BSX92,BSX93,BSY62,BSY63,2N 3227,2N3261,2SC2901,3DG84B,晶体管型号：2N2712生产厂家：美国通用电器公司，SEM，美国史普拉各电气公司制作材料：Si-NPN性质：通用型（Uni）封装形式：直插封装极限工作电压：18V最大电流允许值：0.1A最大耗散率：0.12W放大倍数：β>75最大工作频率：<1MHZ或者未知工作频率引脚数： 3可代换的型号：BC108,BC168,BC172,BC183,BC208,BC238,BC383,BC548,BC583,2N2220,2N2221,2N2222,3DG120 C,晶体管型号：2N1714生产厂家：SEM，美国得克萨斯仪表公司，美国晶体管有限公司制作材料：Si-NPN性质：通用型（Uni）封装形式：直插封装极限工作电压：90V最大电流允许值：0.75A最大耗散率：0.8W放大倍数：β>20最大工作频率：>16MHZ引脚数： 3可代换的型号：BC141,BC301,BSS42,BSS43,BSX46,BSX47,2N5320,2N4239,3DK3D,晶体管型号：2N2923生产厂家：SEM，法国巴黎珊斯公司，美国通用电器公司制作材料：Si-NPN性质：通用型（Uni）封装形式：直插封装极限工作电压：25V最大电流允许值：0.1A最大耗散率：0.2W放大倍数：β>90最大工作频率：300MHZ引脚数： 3可代换的型号：BC168,BC183,BC238,BC548,晶体管型号：2N2924生产厂家：SEM，法国巴黎珊斯公司，美国通用电器公司制作材料：Si-NPN性质：通用型（Uni）封装形式：直插封装极限工作电压：25V最大电流允许值：0.1A最大耗散率：0.2W放大倍数：β>150最大工作频率：300MHZ引脚数： 3可代换的型号：BC168,BC183,BC238,BC548,晶体管型号：2N2925生产厂家：SEM，法国巴黎珊斯公司，美国通用电器公司制作材料：Si-NPN性质：通用型（Uni）封装形式：直插封装极限工作电压：25V最大电流允许值：0.1A最大耗散率：0.2W放大倍数：β>235最大工作频率：300MHZ引脚数： 3可代换的型号：BC168,BC183,BC238,BC548,晶体管型号：2N3019(S)生产厂家：德国AEG公司，法国巴黎珊斯公司，德国电子元件股份公司，美国摩托罗拉半导体公司，美国晶体管有限公司，德国凡尔伏公司制作材料：Si-NPN性质：通用型（Uni）封装形式：直插封装极限工作电压：140V最大电流允许值：1A最大耗散率：0.8W放大倍数：β>100最大工作频率：>100MHZ引脚数： 3可代换的型号：BSS43,BSW68,2SC1860,2N3440,2N3500,2N3501,2G072C,晶体管型号：2N3020(S)生产厂家：德国AEG公司，法国巴黎珊斯公司，德国电子元件股份公司，美国摩托罗拉半导体公司，美国晶体管有限公司，德国凡尔伏公司制作材料：Si-NPN性质：通用型（Uni）封装形式：直插封装极限工作电压：140V最大电流允许值：1A最大耗散率：0.8W放大倍数：β>40最大工作频率：>100MHZ引脚数： 3可代换的型号：BSS43,BSW68,2SC1860,晶体管型号：2N3055(E,H,S,U,)生产厂家：德国AEG公司，德国椤茨标准电器公司，法国巴黎珊斯公司，德国电子元件股份公司，美国摩托罗拉半导体公司，德国凡尔伏公司，德国西门子AG公司，美国晶体管有限公司，美国无线电公司制作材料：Si-NPN性质：低频或音频放大（LF），开关管（S），功率放大（L）封装形式：直插封装极限工作电压：100V最大电流允许值：15A最大耗散率：115W放大倍数：未知放大倍数最大工作频率：>2.5MHZ引脚数： 3可代换的型号：BD130,BD317,BD745C,BDW51C,BDX10,BDY20,BDY39,BDY73,2N5629,2N5630,2N5631,2N6254,3D D17D,晶体管型号：2N3390生产厂家：美国通用电器公司，法国巴黎珊斯公司制作材料：Si-NPN性质：通用型（Uni）封装形式：直插封装极限工作电压：25V最大电流允许值：0.1A最大耗散率：0.36W放大倍数：β>400最大工作频率：140MHZ引脚数： 3可代换的型号：BC108,BC168,BC172,BC183,BC208,BC238,BC383,BC548,BC583,2N2220,2N2221,2N2222,3DG121 C,晶体管型号：2N3391(A)生产厂家：美国通用电器公司，法国巴黎珊斯公司制作材料：Si-NPN性质：通用型（Uni）封装形式：直插封装极限工作电压：25V最大电流允许值：0.1A最大耗散率：0.36W放大倍数：β>250最大工作频率：160MHZ引脚数： 3可代换的型号：BC168,BC183,BC238,BC548,晶体管型号：2N3392生产厂家：美国通用电器公司制作材料：Si-NPN性质：通用型（Uni）封装形式：直插封装极限工作电压：25V最大电流允许值：0.1A最大耗散率：0.36W放大倍数：β>150最大工作频率：120MHZ引脚数： 3可代换的型号：BC108,BC168,BC172,BC183,BC208,BC238,BC383,BC548,BC583,2N2220,2N2221,2N2222,3DG121 A,晶体管型号：2N3393生产厂家：美国通用电器公司制作材料：Si-NPN性质：通用型（Uni）封装形式：直插封装极限工作电压：25V最大电流允许值：0.1A最大耗散率：0.36W放大倍数：β>90最大工作频率：120MHZ引脚数： 3可代换的型号：BC168,BC183,BC238,BC548,晶体管型号：2N3394生产厂家：美国通用电器公司制作材料：Si-NPN性质：通用型（Uni）封装形式：直插封装极限工作电压：25V最大电流允许值：0.1A最大耗散率：0.36W放大倍数：β>55最大工作频率：120MHZ引脚数： 3可代换的型号：BC168,BC183,BC238,BC548,晶体管型号：2N3414生产厂家：美国通用电器公司，法国巴黎珊斯公司，美国国民半导体公司制作材料：Si-NPN性质：通用型（Uni）封装形式：直插封装极限__________工作电压：25V最大电流允许值：0.5A最大耗散率：0.36W放大倍数：β>75最大工作频率：<1MHZ或者未知工作频率引脚数： 3可代换的型号：BC338,BC378,BC738,BC838,2N220,2N221,2N2222,2N3402,3DK3A,晶体管型号：2N3415生产厂家：美国通用电器公司，法国巴黎珊斯公司，美国国民半导体公司制作材料：Si-NPN性质：通用型（Uni）封装形式：直插封装极限工作电压：25V最大电流允许值：0.5A最大耗散率：0.36W放大倍数：β>75最大工作频率：<1MHZ或者未知工作频率引脚数： 3可代换的型号：2N3403,晶体管型号：2N3416生产厂家：美国通用电器公司，法国巴黎珊斯公司，美国国民半导体公司制作材料：Si-NPN性质：通用型（Uni）封装形式：直插封装极限工作电压：25V最大电流允许值：0.5A最大耗散率：0.36W放大倍数：β>75最大工作频率：<1MHZ或者未知工作频率引脚数： 3可代换的型号：BC337,BC377,BC737,BC837,2N2220,2N2221,2N2222,2N3404,3DK3A,晶体管型号：2N3417生产厂家：美国通用电器公司，法国巴黎珊斯公司，美国国民半导体公司制作材料：Si-NPN性质：通用型（Uni）封装形式：直插封装极限工作电压：25V最大电流允许值：0.5A最大耗散率：0.36W放大倍数：β>75最大工作频率：<1MHZ或者未知工作频率引脚数： 3可代换的型号：2N3405,晶体管型号：2N3439(L,S)生产厂家：德国AEG公司，美国无线电公司，美国得克萨斯仪表公司，德国电子元件股份公司，美国晶体管有限公司，德国凡尔伏公司制作材料：Si-NPN性质：开关管（S），视频输出（Vid）封装形式：直插封装极限工作电压：450V最大电流允许值：1A最大耗散率：1W放大倍数：未知放大倍数最大工作频率：<1MHZ或者未知工作频率引脚数： 3可代换的型号：BSS49,BUX54,BUX55,BUX64,BUY59,BUY60,2N5095,3DK304B,晶体管型号：2N3441生产厂家：美国无线电公司，法国巴黎珊斯公司，德国西门子AG公司，SEM，美国硅晶体技术公司，美国晶体管有限公司制作材料：Si-NPN性质：低频或音频放大（LF），开关管（S），功率放大（L）封装形式：直插封装极限工作电压：160V最大电流允许值：3A最大耗散率：25W放大倍数：未知放大倍数最大工作频率：>0.8MHZ引脚数： 2可代换的型号：BD193,BD241D,BD243D,BDX22,BDY72,BDY79,2SD386(A),2N3738,2N6264,3DD61E, 晶体管型号：2N3501(S)生产厂家：美国摩托罗拉半导体公司，美国国民半导体公司，美国晶体管有限公司制作材料：Si-NPN性质：通用型（Uni）封装形式：直插封装极限工作电压：150V最大电流允许值：0.3A最大耗散率：1W放大倍数：β>100最大工作频率：>150MHZ引脚数： 3可代换的型号：BSS43,BSW68,2SC1860,晶体管型号：2N3700生产厂家：美国国民半导体公司，德国电子元件股份公司，德国凡尔伏公司制作材料：Si-NPN性质：通用型（Uni）封装形式：直插封装极限工作电压：140V最大电流允许值：1A最大耗散率：0.5W放大倍数：β>100最大工作频率：200MHZ引脚数： 3可代换的型号：BSS43,BSS59,BSW68,2SC3228,2SC2383,2N2990,3DK204C,晶体管型号：2N3707生产厂家：美国国民半导体公司，美国得克萨斯仪表公司制作材料：Si-NPN性质：低频或音频放大（LF），前置放大（V），低噪放大（ra）封装形式：直插封装极限工作电压：30V最大电流允许值：0.03A最大耗散率：0.36W放大倍数：未知放大倍数最大工作频率：80MHZ引脚数： 3可代换的型号：BC109,BC169,BC173,BC184,BC209,BC239,BC384,BC549,BC584,3DG110B,晶体管型号：2N3711生产厂家：美国国民半导体公司，美国得克萨斯仪表公司制作材料：Si-NPN性质：低频或音频放大（LF）封装形式：直插封装极限工作电压：30V最大电流允许值：0.03A最大耗散率：0.36W放大倍数：β>180最大工作频率：80MHZ引脚数： 3可代换的型号：BC168,BC183,BC238,BC548,晶体管型号：2N3858生产厂家：美国通用电器公司，SEM，美国史普拉各电气公司制作材料：Si-NPN性质：通用型（Uni）封装形式：直插封装极限工作电压：30V最大电流允许值：0.1A最大耗散率：0.36W放大倍数：β>60最大工作频率：125MHZ引脚数： 3可代换的型号：BC108,BC168,BC172,BC183,BC208,BC238,BC383,BC548,BC583,2N2220,2N2221,2N2222,3DG121 M.,晶体管型号：2N3859生产厂家：美国通用电器公司，SEM，美国史普拉各电气公司制作材料：Si-NPN性质：通用型（Uni）封装形式：直插封装极限工作电压：30V最大电流允许值：0.1A最大耗散率：0.36W放大倍数：β>100最大工作频率：140MHZ引脚数： 3可代换的型号：BC168,BC183,BC238,BC548,BC108,BC172,BC208,BC383,BC583,2N2220,2N2221,2N2222,3DG121 M,晶体管型号：2N3860生产厂家：美国通用电器公司，SEM，美国史普拉各电气公司制作材料：Si-NPN性质：通用型（Uni）封装形式：直插封装极限工作电压：30V最大电流允许值：0.1A最大耗散率：0.36W放大倍数：β>150最大工作频率：170MHZ引脚数： 3可代换的型号：BC168,BC183,BC238,BC548,BC108,BC172,BC208,BC383,BC583,2N2220,2N2221,2N2222,3DG121 M,晶体管型号：2N3879生产厂家：美国无线电公司，美国硅晶体技术公司，美国晶体管有限公司制作材料：Si-NPN性质：低频或音频放大（LF），开关管（S），功率放大（L）封装形式：直插封装极限工作电压：120V最大电流允许值：7A最大耗散率：35W放大倍数：未知放大倍数最大工作频率：>40MHZ引脚数： 2可代换的型号：BD193,BDX22,MJE15030,2N5202,2N6264,3DA27B,晶体管型号：2N3903生产厂家：美国摩托罗拉半导体公司，德国电子元件股份公司，美国得克萨斯仪表公司制作材料：Si-NPN性质：通用型（Uni）封装形式：直插封装极限工作电压：60V最大电流允许值：0.2A最大耗散率：0.625W放大倍数：β>50最大工作频率：>250MHZ引脚数： 3可代换的型号：BC174,BC182,BC190,BC546,2N2220,2N2221,2N2222,3DK40B,晶体管型号：2N3904生产厂家：美国摩托罗拉半导体公司，德国电子元件股份公司，美国得克萨斯仪表公司制作材料：Si-NPN性质：通用型（Uni）封装形式：直插封装极限工作电压：60V最大电流允许值：0.2A最大耗散率：0.625W放大倍数：β>100最大工作频率：>250MHZ引脚数： 3可代换的型号：BC174,BC182,BC190,BC546,晶体管型号：2N3947生产厂家：美国摩托罗拉半导体公司，美国国民半导体公司，SSI制作材料：Si-NPN性质：低频或音频放大（LF），开关管（S）封装形式：直插封装极限工作电压：60V最大电流允许值：0.2A最大耗散率：0.36W放大倍数：β>100最大工作频率：<1MHZ或者未知工作频率引脚数： 3可代换的型号：BC182,BC546,BFX94,BSW61,BSW84,2N2221,2N2221(A),2N2222(A),3DG130B, 晶体管型号：2N4014生产厂家：美国摩托罗拉半导体公司，德国电子元件股份公司，美国得克萨斯仪表公司制作材料：Si-NPN性质：开关管（S）封装形式：直插封装极限工作电压：80V最大电流允许值：1A最大耗散率：0.36W放大倍数：未知放大倍数最大工作频率：<1MHZ或者未知工作频率引脚数： 3可代换的型号：2N3737,3DG84C,晶体管型号：2N4123生产厂家：美国摩托罗拉半导体公司，德国电子元件股份公司，美国得克萨斯仪表公司制作材料：Si-NPN性质：低频或音频放大（LF），开关管（S）封装形式：直插封装极限工作电压：40V最大电流允许值：0.2A最大耗散率：0.625W放大倍数：未知放大倍数最大工作频率：<1MHZ或者未知工作频率引脚数： 3可代换的型号：BC107,BC171,BC183,BC207,BC237,BC382,BC547,BC582,BSW41,2N2220,2N2221,2N2222(A),2N22 22,2N2221(A),3DK40A,晶体管型号：2N4124生产厂家：美国摩托罗拉半导体公司，德国电子元件股份公司，美国得克萨斯仪表公司制作材料：Si-NPN性质：低频或音频放大（LF），开关管（S）封装形式：直插封装极限工作电压：30V最大电流允许值：0.2A最大耗散率：0.625W放大倍数：未知放大倍数最大工作频率：<1MHZ或者未知工作频率引脚数： 3可代换的型号：BC238,BC548,BSW41,2N2221(A),2N2222(A),晶体管型号：2N4264生产厂家：CSR，美国摩托罗拉半导体公司，美国半导体技术公司制作材料：Si-NPN性质：开关管（S）封装形式：直插封装极限工作电压：30V最大电流允许值：0.2A最大耗散率：0.625W放大倍数：β>40最大工作频率：<1MHZ或者未知工作频率引脚数： 3可代换的型号：BSS10,BSS11,BSS12,BSV59,BSX19,BSX20,BSX39,BSX87,BSX88,BSX90,BSX91,BSX92,BSX93,B SY62,BSY63,2N914,2N2368(A),2N2369(A),3DK40A,晶体管型号：2N4265生产厂家：CSR，美国摩托罗拉半导体公司，美国半导体技术公司制作材料：Si-NPN性质：开关管（S）封装形式：直插封装极限工作电压：30V最大电流允许值：0.2A最大耗散率：0.625W放大倍数：β>100最大工作频率：<1MHZ或者未知工作频率引脚数： 3可代换的型号：BSS10,BSS11,BSS12,BSV59,BSX19,BSX20,BSX39,BSX87,BSX88,BSX90,BSX91,BSX92,BSX93,B SY62,BSY63,2N914,2N2368(A),2N2369(A),3DK40A,晶体管型号：2N4286生产厂家：美国国民半导体公司，PIH制作材料：Si-NPN性质：低频或音频放大（LF）封装形式：直插封装极限工作电压：30V最大电流允许值：0.05A最大耗散率：0.25W放大倍数：未知放大倍数最大工作频率：<1MHZ或者未知工作频率引脚数： 3可代换的型号：3CG120c,晶体管型号：2N4400生产厂家：美国、法国费兰第有限公司，美国摩托罗拉半导体公司，美国史普拉各电气公司制作材料：Si-NPN性质：通用型（Uni）封装形式：直插封装极限工作电压：60V最大电流允许值：0.6A最大耗散率：0.625W放大倍数：β>50最大工作频率：<1MHZ或者未知工作频率引脚数： 3可代换的型号：BC337A,BC487,BC537,BC637,BC639,2N2220,2N2221,2N2221(A),2N2222,2N2222(A),3DK4B,晶体管型号：2N4401生产厂家：美国、法国费兰第有限公司，美国摩托罗拉半导体公司，美国史普拉各电气公司制作材料：Si-NPN性质：通用型（Uni）封装形式：直插封装极__________限工作电压：60V最大电流允许值：0.6A最大耗散率：0.625W放大倍数：β>100最大工作频率：<1MHZ或者未知工作频率引脚数： 3可代换的型号：BC337A,BC637,BC639,2N2221(A),2N2222(A),晶体管型号：2N4409生产厂家：美国摩托罗拉半导体公司，\NSC，美国得克萨斯仪表公司制作材料：Si-NPN性质：数码驱动（Nix）封装形式：直插封装极限工作电压：80V最大电流允许值：0.25A最大耗散率：0.625W放大倍数：未知放大倍数最大工作频率：>60MHZ引脚数： 3可代换的型号：BF391,BF297,BF422,BFR22,BFR86,BSS38,BSV29,BSX21,MPSA43,2N5550,2SC1670,3DG182H, 晶体管型号：2N4410生产厂家：美国摩托罗拉半导体公司，\NSC，美国得克萨斯仪表公司制作材料：Si-NPN性质：数码驱动（Nix）封装形式：直插封装极限工作电压：120V最大电流允许值：0.25A最大耗散率：0.625W放大倍数：未知放大倍数最大工作频率：>60MHZ引脚数： 3可代换的型号：BF391,BFR22,MPS-A43,2SC1670,晶体管型号：2N4424生产厂家：美国通用电器公司，法国巴黎珊斯公司，美国史普拉各电气公司制作材料：Si-NPN性质：低频或音频放大（LF），开关管（S）封装形式：直插封装极限工作电压：60V最大电流允许值：0.5A最大耗散率：0.36W放大倍数：未知放大倍数最大工作频率：<1MHZ或者未知工作频率引脚数： 3可代换的型号：BC337A,BC487,BC537,BC637,BC640,2N2220,2N2221,2SD667,3DK40A,晶体管型号：2N4921生产厂家：美国摩托罗拉半导体公司，美国国民半导体公司，德国电子元件股份公司制作材料：Si-PNP性质：低频或音频放大（LF），开关管（S），功率放大（L）封装形式：直插封装极限工作电压：40V最大电流允许值：1A最大耗散率：30W放大倍数：未知放大倍数最大工作频率：>3MHZ引脚数： 3可代换的型号：BD135,BD165,BD175,BD185,BD233,BD437,3DD30A,晶体管型号：2N4922生产厂家：美国摩托罗拉半导体公司，美国国民半导体公司，德国电子元件股份公司制作材料：Si-PNP性质：低频或音频放大（LF），开关管（S），功率放大（L）封装形式：直插封装极限工作电压：60V最大电流允许值：1A最大耗散率：30W放大倍数：未知放大倍数最大工作频率：>3MHZ引脚数： 3可代换的型号：BD137,BD167,BD177,BD187,BD235,BD439,3DD30A,晶体管型号：2N4923生产厂家：美国摩托罗拉半导体公司，美国国民半导体公司，德国电子元件股份公司制作材料：Si-PNP性质：低频或音频放大（LF），开关管（S），功率放大（L）封装形式：直插封装极限工作电压：80V最大电流允许值：1A最大耗散率：30W放大倍数：未知放大倍数最大工作频率：>3MHZ引脚数： 3可代换的型号：BD139,BD169,BD179,BD189,BD237,BD441,3DD30A,晶体管型号：2N5038(-1)生产厂家：美国无线电公司，德国电子元件股份公司，美国得克萨斯仪表公司制作材料：Si-NPN性质：开关管（S），功率放大（L）封装形式：直插封装极限工作电压：150V最大电流允许值：20A最大耗散率：140W放大倍数：未知放大倍数最大工作频率：>60MHZ引脚数： 2可代换的型号：BUV10,BUW57,BUX10,BUX40,晶体管型号：2N5039(-1)生产厂家：美国无线电公司，德国电子元件股份公司，美国得克萨斯仪表公司制作材料：Si-NPN性质：开关管（S），功率放大（L）封装形式：直插封装极限工作电压：120V最大电流允许值：20A最大耗散率：140W放大倍数：未知放大倍数最大工作频率：>60MHZ引脚数： 2可代换的型号：BUV10,BUW57,BUX10,BUX40,晶体管型号：2N5058(S)生产厂家：美国摩托罗拉半导体公司，美国硅晶体技术公司，美国得克萨斯仪表公司制作材料：Si-NPN性质：开关管（S），视频输出（Vid）封装形式：直插封装极限工作电压：300V最大电流允许值：0.15A最大耗散率：1W放大倍数：未知放大倍数最大工作频率：>30MHZ引脚数： 3可代换的型号：BF259,BF338,BF659,BFR59,BFS89,BFT49,3DG841,晶体管型号：2N5059(S)生产厂家：美国摩托罗拉半导体公司，美国硅晶体技术公司，美国得克萨斯仪表公司制作材料：Si-NPN性质：开关管（S），视频输出（Vid）封装形式：直插封装极限工作电压：250V最大电流允许值：0.15A最大耗散率：1W放大倍数：未知放大倍数最大工作频率：>30MHZ引脚数： 3可代换的型号：BF258,BF259,BF337,BF658,BF659,BFS89,BFR58,BFT48,3DG841,晶体管型号：2N5088生产厂家：美国范恰得公司，美国摩托罗拉半导体公司，美国国民半导体公司制作材料：Si-NPN性质：低频或音频放大（LF），低噪放大（ra）封装形式：直插封装极限工作电压：35V最大电流允许值：0.05A最大耗散率：0.625W放大倍数：β>300最大工作频率：<1MHZ或者未知工作频率引脚数： 3可代换的型号：BC109,BC169,BC173,BC184,BC209,BC239,BC384,BC549,BC584,3DG120A, 晶体管型号：2N5089生产厂家：美国范恰得公司，美国摩托罗拉半导体公司，美国国民半导体公司制作材料：Si-NPN性质：低频或音频放大（LF），低噪放大（ra）封装形式：直插封装极限工作电压：30V最大电流允许值：0.05A最大耗散率：0.625W放大倍数：β>400最大工作频率：<1MHZ或者未知工作频率引脚数： 3可代换的型号：BC169,BC184,BC239,BC549,晶体管型号：2N5172生产厂家：美国通用电器公司，SEM，美国史普拉各电气公司制作材料：Si-NPN性质：通用型（Uni）封装形式：直插封装极限工作电压：25V最大电流允许值：0.1A最大耗散率：0.36W放大倍数：未知放大倍数最大工作频率：200MHZ引脚数： 3可代换的型号：BC108,BC168,BC172,BC183,BC208,BC238,BC383,BC548,BC583,2N2220,2N2221,2N2222,3DG120 A,晶体管型号：2N5191生产厂家：美国摩托罗拉半导体公司，美国国民半导体公司，德国电子元件股份公司制作材料：Si-NPN性质：低频或音频放大（LF），开关管（S），功率放大（L）封装形式：直插封装极限工作电压：60V最大电流允许值：4A最大耗散率：40W放大倍数：未知放大倍数最大工作频率：>2MHZ引脚数： 3可代换的型号：BD189,BD199,BD295,BD441,BD789,MJE240,MJE241,MJE242,MJE243,MJE244,3DD64C,晶体管型号：2N5192生产厂家：美国摩托罗拉半导体公司，美国国民半导体公司，德国电子元件股份公司制作材料：Si-NPN性质：低频或音频放大（LF），开关管（S），功率放大（L）封装形式：直插封装极限工作电压：80V最大电流允许值：4A最大耗散率：40W放大倍数：未知放大倍数最大工作频率：>2MHZ引脚数： 3可代换的型号：BD189,BD199,BD295,BD441,BD789,MJE240,MJE241,MJE242,MJE243,MJE244,3DD64C,晶体管型号：2N5209生产厂家：美国、法国费兰第有限公司，美国摩托罗拉半导体公司，美国国民半导体公司制作材料：Si-NPN性质：低频或音频放大（LF），低噪放大（ra）封装形式：直插封装极限工作电压：50V最大电流允许值：0.05A最大耗散率：0.625W放大倍数：未知放大倍数最大工作频率：80MHZ引脚数： 3可代换的型号：BC184,BC384,BC413,BC414,BC550,2SC2240,3DG110C,晶体管型号：2N5210生产厂家：美国、法国费兰第有限公司，美国摩托罗拉半导体公司，美国国民半导体公司制作材料：Si-NPN性质：低频或音频放大（LF），低噪放大（ra）封装形式：直插封装极限工作电压：50V最大电流允许值：0.05A最大耗散率：0.625W放大倍数：未知放大倍数最大工作频率：80MHZ引脚数： 3可代换的型号：BC184,BC413,BC414,BC550,2SC2240,晶体管型号：2N5223生产厂家：美国摩托罗拉半导体公司，美国史普拉各电气公司，美国得克萨斯仪表公司制作材料：Si-NPN性质：通用型（Uni）封装形式：直插封装极限工作电压：25V最大电流允许值：0.1A最大耗散率：0.625W放大倍数：未知放大倍数最大工作频率：>150MHZ引脚数： 3可代换的型号：BC108,BC168,BC172,BC183,BC208,BC238,BC383,BC548,BC583,2N2220,2N2221,2N2222,3DG120 A,晶体管型号：2N5224生产厂家：美国摩托罗拉半导体公司，美国史普拉各电气公司制作材料：Si-NPN性质：低频或音频放大（LF），开关管（S）封装形式：直插封装极限工作电压：25V最大电流允许值：0.2A最大耗散率：0.625W放大倍数：未知放大倍数最大工作频率：<1MHZ或者未知工作频率引脚数： 3可代换的型号：BC108,BC172,BC183,BC208,BC238,BC383,BC548,BC583,BSS10,BSS11,BSS12,BSX19,BSX20,2N 2220,2N2221,2N2222,2N2368(A),2N2369(A),3DG120C,晶体管型号：2N5232(A)生产厂家：美国中央固体工业公司制作材料：Si-NPN性质：通用型（Uni），低噪放大（ra）封装形式：直插封装极限工作电压：70V最大电流允许值：0.1A最大耗散率：0.36W放大倍数：未知放大倍数最大工作频率：>250MHZ引脚数： 3可代换的型号：BC174,BC182,BC190,BC546,2N2220A,2N2221A,2N2222A,2SC1775(A),2SC2240,2SC2389,2SC2459 ,3DG121D,晶体管型号：2N5302生产厂家：美国摩托罗拉半导体公司，美国硅晶体技术公司，美国得克萨斯仪表公司制作材料：Si-NPN性质：低频或音频放大（LF），开关管（S），功率放大（L）封装形式：直插封装极限工作电压：60V最大电流允许值：30A最大耗散率：200W放大倍数：未知放大倍数最大工作频率：>2MHZ引脚数： 2可代换的型号：BDY29,MJ802,2SD797,晶体管型号：2N5303生产厂家：美国摩托罗拉半导体公司，美国硅晶体技术公司，美国得克萨斯仪表公司制作材料：Si-NPN。
NPN Silicon Amplifier Transistors数据手册说明书
BC182, BC182BAmplifier TransistorsNPN SiliconFeatures•These are Pb−Free Devices*MAXIMUM RATINGSRating Symbol Value Unit Collector−Emitter Voltage V CEO50Vdc Collector−Base Voltage V CBO60Vdc Emitter−Base Voltage V EBO 6.0Vdc Collector Current − Continuous I C 100mAdcTotal Device Dissipation @ T A = 25°C Derate above 25°C P D3502.8mWmW/°CTotal Device Dissipation @ T C = 25°C Derate above 25°C P D 1.08.0WmW/°COperating and Storage JunctionTemperature RangeT J, T stg−55 to +150°C THERMAL CHARACTERISTICSCharacteristic Symbol Max Unit Thermal Resistance, Junction−to−Ambient R q JA357°C/W Thermal Resistance, Junction−to−Case R q JC125°C/W Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.*For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.COLLECTOR12BASE3EMITTERDevice Package Shipping†ORDERING INFORMATIONBC182G TO−92(Pb−Free)5000 Units / BulkBC182BG TO−92(Pb−Free)5000 Units / BulkBC182BRL1G TO−92(Pb−Free)2000 / Tape & Reel†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our T ape and Reel Packaging Specifications Brochure, BRD8011/D.12312BENT LEADTAPE & REELAMMO PACKSTRAIGHT LEADBULK PACK3TO−92CASE 29STYLE 17MARKING DIAGRAMBC182BAYWW GGA= Assembly LocationY= YearWW= Work WeekG= Pb−Free Package(Note: Microdot may be in either location)ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted)Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICSCollector−Emitter Breakdown Voltage(I C = 2.0 mA, I B = 0)V(BR)CEO50−−VCollector−Base Breakdown Voltage(I C = 10 m A, I E = 0)V(BR)CBO60−−VEmitter−Base Breakdown Voltage(I E = 100 m A, I C = 0)V(BR)EBO 6.0−−VCollector Cutoff Current(V CB = 50 V, V BE = 0)I CBO−0.215nAEmitter−Base Leakage Current(V EB = 4.0 V, I C = 0)I EBO−−15nA ON CHARACTERISTICSDC Current Gain(I C = 10 m A, V CE = 5.0 V)BC182(I C = 2.0 mA, V CE = 5.0 V)BC182BC182B(I C = 100 mA, V CE = 5.0 V)BC182h FE4012018080−−−−−500500−−Collector−Emitter On Voltage(I C = 10 mA, I B = 0.5 mA)(I C = 100 mA, I B = 5.0 mA) (Note 1)V CE(sat)−−0.070.20.250.6VBase−Emitter Saturation Voltage(I C = 100 mA, I B = 5.0 mA) (Note 1)V BE(sat)−− 1.2VBase−Emitter On Voltage(I C = 100 m A, V CE = 5.0 V)(I C = 2.0 mA, V CE = 5.0 V)(I C = 100 mA, V CE = 5.0 V) (Note 1)V BE(on)−0.55−0.50.620.83−0.7−VDYNAMIC CHARACTERISTICSCurrent−Gain — Bandwidth Product(I C = 0.5 mA, V CE = 3.0 V, f = 100 MHz)(I C = 10 mA, V CE = 5.0 V, f = 100 MHz)f T−150100200−−MHzCommon Base Output Capacitance(V CB = 10 V, I C = 0, f = 1.0 MHz)C ob−− 5.0pFCommon Base Input Capacitance(V EB = 0.5 V, I C = 0, f = 1.0 MHz)C ib−8.0−pFSmall−Signal Current Gain(I C = 2.0 mA, V CE = 5.0 V, f = 1.0 kHz)BC182BC182B h fe125240−−500500−Noise Figure(I C = 0.2 mA, V CE = 5.0 V, R S = 2.0 k W, f = 1.0 kHz)NF− 2.010dB1.Pulse Test: Tp 300 s, Duty Cycle2.0%.2.01.51.00.20.30.40.60.8I C , COLLECTOR CURRENT (mAdc)Figure 1. Normalized DC Current Gainh F E , N O R M A L I Z E D D C C U R R E N T G A I NI C , COLLECTOR CURRENT (mAdc)Figure 1. “Saturation” and “On” VoltagesV , V O L T A G E (V O L T S )4002030406080100200300I C, COLLECTOR CURRENT (mAdc)Figure 2. Current−Gain — Bandwidth Product f T , C U R R E N T −G A I N Ċ B A N D W I D T H P R O D U C T (M H z )C , C A P A C I T A NC E (p F )101.02.03.05.07.0V R , REVERSE VOLTAGE (VOLTS)Figure 3. Capacitancesr b , B A S E S P R E A D I N G R E S I S T A N C E (O H M S )I C , COLLECTOR CURRENT (mAdc)Figure 4. Base Spreading ResistancePACKAGE DIMENSIONSTO−92 (TO−226)CASE 29−11ISSUE AMNOTES:1.DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.2.CONTROLLING DIMENSION: INCH.3.CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED.4.LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM.PLANEDIM MIN MAX MIN MAX MILLIMETERSINCHES A 0.1750.205 4.45 5.20B 0.1700.210 4.32 5.33C 0.1250.165 3.18 4.19D 0.0160.0210.4070.533G 0.0450.055 1.15 1.39H 0.0950.105 2.42 2.66J 0.0150.0200.390.50K 0.500−−−12.70−−−L 0.250−−− 6.35−−−N 0.0800.105 2.04 2.66P −−−0.100−−− 2.54R 0.115−−− 2.93−−−V0.135−−−3.43−−−NOTES:1.DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.2.CONTROLLING DIMENSION: MILLIMETERS.3.CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED.4.LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM.DIM MIN MAX MILLIMETERS A 4.45 5.20B 4.32 5.33C 3.18 4.19D 0.400.54G 2.40 2.80J 0.390.50K 12.70−−−N 2.04 2.66P 1.50 4.00R 2.93−−−V3.43−−−STYLE 17:PIN 1.COLLECTOR2.BASE3.EMITTERON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.PUBLICATION ORDERING INFORMATION。
十种NPN开关管参数
TO-92 封MJE13001是小功率高压高速开关三极管，典型应用：荧光灯电子镇流器。
它采用 装，管脚排列如图：MJE13001主要参数：集电极-基极最高耐压VCBO=500V集电极-发射极最高耐压 VCEO=400V发射极-基极最高耐压VEBO=9V集电极电流IC=0.3A耗散功率PC=7W结温 Tj=150 C贮藏温度 TSTG=-50~150 C直流放大系数HFE=8~403DD13001是硅NPN 型小功率开关三极管，主要用于节能灯电子镇流器、手机充电器等 开关电源电路。
3DD13001具有击穿电压高、反向漏电流小、开关速度快、饱和压降低、高 温性能好等特点。
采用 TO-251封装的3DD13001管脚排列如图：TO —2511 BASE2 COLLECTORREMITTER1脚：基极； 2脚：集电极； 3脚：发射极3DD13001主要参数：集电极最大耗散功率 PCM=1.2W (Tamb=25 C )集电极最大允许电流 ICM=0.2A集电极-基极反向击穿电压 BVCBO=6OOV集电极-发射极反向击穿电压 BVCEO=4OOV发射极-基极反向击穿电压 BVEBO=7V结温 Tj=150 C贮藏温度 TSTG=-55~150 C直流放大系数=8~40TO-92封装的外形硅NPN日光灯电子镇流器，以及其它开关电路中。
MJE13002(3DD13002)采用TO-126 尺寸和管脚排列如图：TO-12S MJE13002(3DD13002)主要参数 VCBO=600V VCEO=400V VEB0=7V IC=1A PC=1.2W Tj=150 C TSTG=-55~150 C ICB0=100 [iA IEBO=100 [iA HFE=10~40 VCE(sat) =0.5V VBE(sat) =1.0V fT=4MHz Tf=0.6 jis MJE13003是主要用于节能灯及荧光灯电子镇流器的高反压大功率开关三极管，型，采用TO-126封装，它的外形和管脚排列如下：TO^12 5MJE13003主要参数集电极-基极电压 VCBO 700 V集电极-发射极电压 VCEO 400 V发射极-基极电压VEBO 9V2. COLLECTOR3 EMITTER集电极电流IC 2.0 A集电极耗散功率 PC 40 W最高工作温度Tj 150 ° C贮存温度 Tstg -65-150 ° C集电极-基极截止电流ICBO (VCB=700V) 100 卩A集电极-发射极截止电流ICEO (VCE=400V ,IB=0) 250卩A集电极-发射极电压 VCEO (IC=10mA,IB=0) 400 V发射极-基极电压 VEBO (IE=1mA,IC=0) 9 V直流电流放大倍数 5~403DD13005是高反压大功率开关三极管，硅材料NPN 型，平面扩散工艺制造，开关速度 快，耐压高。
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HIGH VOLTAGE SWITCH MODE APPLICATION
• High Speed Switching
• Suitable for Switching Regulator and Motor Control
ABSOLUTE MAXIMUM RATINGS
ELECTRICAL CHARACTERISTICS (TC =25°C)
* Pulse test: PW ≤
300µs, Duty cycle ≤2%
Characteristic
Symbol Rating Unit Collector Base Voltage
: KSE13006 : KSE13007
Collector Emitter Voltage
: KSE13006 : KSE13007 Emitter Base Voltage Collector Current (DC) Collector Current (Pulse) Base Current
Collector Dissipation (T C =25°C) Junction Temperature Storage Temperature
V CBO V CEO V EBO I C I C I B P C T J T STG
600700300400 9 8 16 4 80150-65 ~ 150
V V V V V A A A W °C °C
Characteristic
Symbol Test Conditions Min Typ Max Unit * Collector Emitter Sustaining Voltage : KSE13006
: KSE13007
Emitter Cutoff Current * DC Current Gain
* Collector Emitter Saturation Voltage
* Base Emitter Saturation Voltage Output Capacitance
Current Gain Bandwidth Product Turn On Time Storage Time Fall Time
V CEO (sus) I EBO h FE V CE (sat)
V BE (sat) C OB f T t ON t S t F
I C = 10mA, I B = 0 V EB = 9V, I C = 0 V CE = 5V, I C = 2A V CE = 5V, I C = 5A I C = 2A, I B = 0.4A I C = 5A, I B = 1A I C = 8A, I B = 2A I C = 2A, I B = 0.4A I C = 5A, I B = 1A
V CB = 10V, f = 0.1MHz V CE = 10V, I C = 0.5A V CC = 125V, I C = 5A I B1 = -I B2 = 1A
300400 8 5
4
110
1 60 30 1
2 31.21.6
1.6 30.7
V V mA
V V V V V pF MHz µs µs µs
1.Base
2.Collector
3.Emitter
TO-220
©1999 Fairchild Semiconductor Corporation
Rev. B
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