ELECTRONIC DEVICE OF VERTICAL MOS TYPE WITH TERMIN

专利名称：ELECTRONIC DEVICE OF VERTICAL MOS
TYPE WITH TERMINATION TRENCHES
HAVING VARIABLE DEPTH
发明人：Angelo MAGRÍ,Giacomo BARLETTA
申请号：US15479975
申请日：20170405
公开号：US20170207334A1
公开日：
20170720
专利内容由知识产权出版社提供
专利附图：
摘要：An electronic device is integrated on a chip of semiconductor material having a main surface and a substrate region with a first type of conductivity. The electronic device
has a vertical MOS transistor, formed in an active area having a body region with a second conductivity type. A set of one or more cells each one having a source region of the first conductivity, a gate region of electrically conductive material in a gate trench extending from the main surface in the body region and in the substrate region, and an insulating gate layer, and a termination structure with a plurality of termination rings surrounding at least part of the active area on the main surface, each termination ring having a floating element of electrically insulating material in the termination trench extending from the main surface in the chip and at least one bottom region of said semiconductor material of the second conductivity type extending from at least one deepest portion of a surface of the termination trench in the chip; the termination trenches have a depth from the main surface decreasing moving away from the active area.
申请人：STMICROELECTRONICS S.R.L.
地址：Agrate Brianza IT
国籍：IT
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