BFR194中文资料

Package Equivalent Circuit: LBI = LBO = LEI = LEO = LCI = LCO = CBE = CCB = CCE = 0.85 0.51 0.69 0.61 0 0.49 73 84 165 nH nH nH nH nH nH fF fF fF
Valid up to 6 GHz For examples and ready to use parameters please contact your local Siemens distributor or sales office to obtain a Siemens CD-ROM or see Internet: http://www.siemens.de/Semiconductor/products/35/35.htm
TA
200
100 0 0 20 40 60 80 100 120 °C 150 TA ,TS
Permissible Pulse Load RthJS = f (tp)
Permissible Pulse Load Ptotmax/PtotDC = f (tp)
10 3
10 2
K/W
RthJS
10 2
Ptotmax/P totDC D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5
BFR 194
Power Gain Gma, Gms = f(VCE):_____
|S21 |2 = f(VCE):---------
Intermodulation Intercept Point IP3=f(IC)
(3rd order, Output, ZS=ZL=50Ω)
f = Parameter
Semiconductor Group
4
Dec-13-1996
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BFR 194
Total power dissipation Ptot = f (TA*, TS)
* Package mounted on epoxy
800
mW
Ptot
600
500
400
TS
300
Package SOT-23
Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation Symbol Values 15 20 3 100 10 mW 700 150 - 65 ... + 150 - 65 ... + 150 ≤ 110 °C mA Unit V
VCE = 10 V, f = 1 MHz
Emitter-base capacitance
Ceb
-
VEB = 0.5 V, f = 1 MHz
Noise figure
F
IC = 20 mA, VCE = 8 V, ZS = ZSopt f = 900 MHz f = 1.8 GHz
Power gain
Power Gain Gma, Gms = f(IC)
f = 0.9GHz VCE = Parameter
12
Power Gain Gma, Gms = f(IC)
f = 1.8GHz VCE = Parameter
7.0 dB
dB
6.0 10V
10V 5V 3V 2V
G
10
G
5V
5.5 5.0 4.5 4.0
9
3V 2V
8
3.5 3.0
7 1V
2.5 1V 2.0 1.5
6
5 4 0 20 40 60 80 0.7V mA 120 IC
1.0 0.5 0.0 0 20 40 60 80
0.7V
mA IC
120
Semiconductor Group
6
Dec源自文库13-1996
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ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration BFR 194 RKs Q62702-F1346 1=B 2=E 3=C
V(BR)CEO
15 50 -
V nA 100 µA 1 15 -
IC = 1 mA, IB = 0
Collector-base cutoff current
ICBO IEBO hFE
VCB = 10 V, IE = 0
Emitter-base cutoff current
VEB = 2 V, IC = 0
fT
3.5 5 1.47 0.28 4.4 -
GHz pF 2 dB 2.8 4.7 -
IC = 70 mA, VCE = 8 V, f = 500 MHz
Collector-base capacitance
Ccb Cce
-
VCB = 10 V, f = 1 MHz
Collector-emitter capacitance
DC current gain
IC = 70 mA, VCE = 8 V
Semiconductor Group
2
Dec-13-1996
元器件交易网www.cecb2b.com
BFR 194
Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol min. AC Characteristics Transition frequency Values typ. max. Unit
BF = IKF = BR = IKR = RB = RE = VJE = XTF = PTF = MJC = CJS = XTB = FC =
111.78 0.84785 92.296 0.75304 0.15908 0.84843 0.65766 0 0.40003 0 0 0.90755
A Ω Ω V deg fF -
RthJS
K/W
1) TS is measured on the collector lead at the soldering point to the pcb.
Semiconductor Group
1
Dec-13-1996
元器件交易网www.cecb2b.com
BFR 194
Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol min. DC Characteristics Collector-emitter breakdown voltage Values typ. max. Unit
VCE = Parameter
30
Power Gain |S21|2= f(f)
VCE = Parameter
28
IC=70mA
dB
dB
IC=70mA
G
S21
20
22 18 14
15
10 6 2
10
5 10V 2V 0.7V 0.5 1.0 1.5 2.0 2.5 GHz f 3.5 -2 -6 0.0
0.010453 mA
0.063742 -
All parameters are ready to use, no scalling is necessary. Extracted on behalf of SIEMENS Small Signal Semiconductors by: Institut für Mobil-und Satellitenfunktechnik (IMST) © 1996 SIEMENS AG
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BFR 194
PNP Silicon RF Transistor • For low distortion broadband amplifiers in antenna and telecommunications systems up to 1.5 GHz at collector currents from 20mA to 80mA • Complementary type: BFR 106 (NPN)
10 1 0.5 0.2 0.1 0.05 0.002 0.01 0.005 D=0
10 1
10 0 -7 10
10
-6
10
-5
10
-4
10
-3
10
-2
10 s 10 tp
-1
0
10 0 -7 10
10
-6
10
-5
10
-4
10
-3
10
-2
10 s 10 tp
-1
0
Semiconductor Group
10V 2V 0.7V 0.5 1.0 1.5 2.0 2.5 GHz f 3.5
0 0.0
Semiconductor Group
7
Dec-13-1996
12
VCE = Parameter, f = 900MHz
40 0.9GHz 8V dBm
IC=70mA
dB
G
0.9GHz 8
IP3
30 2V
3V
6
1.8GHz
25 1V
4
20
2
15
0 0 2 4 6 8 V 12
10 0
10
20
30
40
50
60
70
V CE
80 mA 100 IC
Power Gain Gma, Gms = f(f)
5
Dec-13-1996
元器件交易网www.cecb2b.com
BFR 194
Collector-base capacitance Ccb = f (VCB) VBE = vbe = 0, f = 1MHz
Transition frequency fT = f (IC)
VCE = Parameter
2)
Gma
IC = 70 mA, VCE = 8 V, ZS = ZSopt ZL = ZLopt f = 900 MHz f = 1.8 GHz
Transducer gain |S21e|2 8 3 10 5.5 -
IC = 70 mA, VCE = 8 V, ZS =ZL= 50 Ω f = 900 MHz f = 1.8 MHz
2) Gma = |S21/S12| (k-(k2-1)1/2)
Semiconductor Group
3
Dec-13-1996
元器件交易网www.cecb2b.com
BFR 194
SPICE Parameters (Gummel-Poon Model, Berkeley-SPICE 2G.6 Syntax) : Transistor Chip Data IS = 4.574 fA VAF = NE = VAR = NC = RBM = CJE = TF = ITF = VJC = TR = MJS = XTI = 9.1007 0.841 1.7871 1.6 4.1356 17.699 53.11 0.71631 0.97481 0 3 V V Ω fF ps V ns -
VCEO VCBO VEBO IC IB Ptot Tj TA Tstg
1)
TS ≤ 73 °C
Junction temperature Ambient temperature Storage temperature Thermal Resistance Junction - soldering point
NF = ISE = NR = ISC = IRB = RC = MJE = VTF = CJC = XCJC = VJS = EG = TNOM
0.66503 21.629 0.43618
fA -
0.012843 A
0.0078447 fA 0.061674 mA 0.10833 0.48212 0.10323 3585.6 0.75 1.11 300 Ω V fF V eV K
4.5 pF
5.5 GHz 10V 8V
Ccb
3.5 3.0
fT
4.5 5V 4.0 3V 3.5 2V
2.5 2.0 1.5 1.0
3.0 2.5 2.0 1.5 1.0 1V 0.7V
0.5 0.0 0 4 8 12 16 V VR 22
0.5 0.0 0 20 40 60 80 mA IC 120