HSG2004中文资料

100
IC (mA)
VCE = 3 V 80
Collector Current
60
DC Current Transfer Ratio
0.2 0.4 0.6 0.8 1.0
200
40
100
20
0 1 10 100
0
Base to Emitter Voltage
VBE (V)
Collector Current
HSG2004
2.4 GHz Characteristics
Evaluation Board Circuit
VBB:Bias Control *1 µF 1000 pF 10 pF R : 27 Ω 10 pF 1000 pF *1 µF VCC
L : 5.6 nH C : 1 pF IN L : 1.5 nH
元器件交易网
HSG2004
SiGe HBT High Frequency Medium Power Amplifier
REJ03G0484-0400 Rev.4.00 Jun 21, 2006
Features
• High Transition Frequency fT = 30 GHz typ. • Low Distortion and Excellent Linearity P1dB at output = +14.5 dBm typ. f = 5.8 GHz • High Collector to Emitter Voltage VCEO = 5 V • Ideal for 2 GHz, 5 GHz Band applications. e.g. WLAN, Digital cordless phone.
IC (mA)
Reverse Transfer Capacitanse Cre (pF)
Reverse Transfer Capacitanse vs. Collector to Base Voltage
0.5 40
Transition Frequency vs. Collector Current
20 VCE = 3.6 V IC = 30 mA 10 S21 10 20
S parameter vs. Frequency
VCE = 3.6 V IC = 40 mA S21
S parameter (dB)
S parameter (dB)
0
S11
0
S11 S22
-10 S22 -20 S12 -30 4 5 6 7 8
Transition Frequency Maximum Stable Gain Maximum Available Gain Maximum Available Gain Power Gain 1dB Compression Point at output
Saturation Output Power
30 25 20 15 10 5 0 1 10 100 1000 5.2 GHz 5.8 GHz 1.8 GHz 2.4 GHz VCE = 3 V MAG MSG
S21 Parameter, Maximum Available Gain, Maximum Stable Gain vs. Frequency
S11
S parameter (dB)
0 -10 S22 -5 2.0 2.5 3.0 3.5 4.0
S12 1.5 2.0 2.5 3.0 3.5 4.0
Frequency f (GHz)
Frequency f (GHz)
Rev.4.00 Jun 21, 2006 page 4 of 12
IC (mA)
Maximum Stable Gain, Maximum Available Gain vs. Collector Current
Maximum Stable Gain MSG (dB) Maximum Available Gain MAG (dB) S21 Parameter |S21|2 (dB) Maximum Stable Gain MSG (dB) Maximum Available Gain MAG (dB)
3rd. Order Intermodulation Distortion (IMD3)
40 VCE = 3.6 V Iidle = 30 mA f = 5.8 GHz
Output Power Pout (dBm) Power Gain PG (dB)
20
200
20
Pout / IMD3 (dBm)
0.5 pF 0.3 pF IN 0.5 pF 0.5 pF OUT
Pin - Pout Characteristics
Pin - Pout Characteristics
25 250 VCC = 3.6 V Iidle = 30 mA f = 5.8 GHz Pout Iop 10 PG 5 50 100
Transition Frequency fT (GHz)
VCE = 3 V f = 1 GHz 30
IE = 0 f = 1 MHz 0.4
0.3
20
0.2
10
0.1
0
1
2
3
4
0 1
10
100
1000
Collector to Base Voltage
VCB (V)
Collector Current
Outline
Renesas Package code: PWQN0008ZA-A (Package name: HWQFN-8 <TNP-8TV>)
9 4 4 5 6 7
5 7 6
9
200
4
8
3 1 2
3
2
1
8
1. Collector 2. Collector 3. Collector 4. Emitter 5. Emitter 6. Base 7. Emitter 8. Emitter 9. Emitter
Rev.4.00 Jun 21, 2006 page 1 of 12
元器件交易网
HSG2004
Electrical Characteristics
(Ta = 25°C)
Item DC current transfer ratio Reverse Transfer Capacitance Symbol hFE Cre fT MSG MAG MAG PG P1dB Po(sat) Min 170 14 Typ 240 30.0 15.5 21 12 11.5 +14.5 +22 Max 320 0.6 Unit pF GHz dB dB dB dB dBm dBm Test Conditions VCE = 3 V, IC = 30 mA VCB = 3 V, IE = 0, f = 1 MHz, emitter grounded VCE = 3 V, IC = 30 mA, f = 1 GHz VCE = 3 V, IC = 30 mA, f = 5.8 GHz VCE = 3 V, IC = 30 mA, f = 2.4 GHz VCE = 3 V, IC = 30 mA, f = 5.8 GHz VCE = 3.6 V, Iidle = 30 mA, f = 5.8 GHz, Pin = +0 dBm VCE = 3.6 V, Iidle = 30 mA, f = 5.8 GHz VCE = 3.6 V, Iidle = 30 mA, f = 5.8 GHz, Pin = +0 dBm
Pout PG
250
Pout / IMD3 (dBm)
20 10 0 -10 -20 -30
200 150 100
Iop 0 -5 -20
50
-40 -10 0 0 10 -50 -60 -40 -20 0 20 40
Iop (mA)
Input Power Pin (dBm)
Input Power Pin (dBm)
元器件交易网
HSG2004
5.8 GHz Characteristics
Evaluation Board Circuit
VBB:Bias Control *1 µF 1000 pF 10 pF 20 Ω 2 pF 10 pF 1000 pF 2 pF *1 µF VCC
-10
-20 S12 -30 4 5 6 7 8
Frequency f (GHz)
Frequency f (GHz)
Rev.4.00 Jun 21, 2006 page 5 of 12
元器件交易网
HSG2004
S21 Parameter vs. Frequency
L : 10 nH C : 2 pF OUT L : 1.8 nH C : 0.9 pF
C : 1 to 2 pF
Pin - Pout Characteristics Pin - Pout Characteristics
25
3rd. Order Intermodulation Distortion (IMD3)
Ta (°C)
Rev.4.00 Jun 21, 2006 page 2 of 12
元器件交易网
HSG2004
DC Current Transfer Ratio vs. Collector Current
hFE (-)
400 VCE = 3 V 300
Typical Transfer Characteristics
300
40 30 VCE = 3.6 V Iidle = 30 mA f = 2.4 GHz Fundamental (1tone) IMD3 (2tone: ∆f = 1MHz)