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RFID工作频率的分类

RFID工作频率的分类1.概要从应用概念来说，射频标签的工作频率也就是射频识别系统的工作频率，是其最重要的特点之一。

毫无疑问，射频标签的工作频率是其最重要的特点之一。

射频标签的工作频率不仅决定着射频识别系统工作原理（电感耦合还是电磁耦合）、识别距离，还决定着射频标签及读写器实现的难易程度和设备的成本。

工作在不同频段或频点上的射频标签具有不同的特点。

射频识别应用占据的频段或频点在国际上有公认的划分，即位于ISM波段之中。

典型的工作频率有：125kHz，133kHz，13.56MHz，27.12MHz，433MHz，902~928MHz，2.45GHz，5.8GHz等。

从应用概念来说，射频标签的工作频率也就是射频识别系统的工作频率。

2．低频段射频标签低频段射频标签，简称为低频标签，其工作频率范围为30kHz ~ 300kHz。

典型工作频率有：125KHz，133KHz。

低频标签一般为无源标签，其工作能量通过电感耦合方式从阅读器耦合线圈的辐射近场中获得。

低频标签与阅读器之间传送数据时，低频标签需位于阅读器天线辐射的近场区内。

低频标签的阅读距离一般情况下小于1米。

低频标签的典型应用有：动物识别、容器识别、工具识别、电子闭锁防盗（带有内置应答器的汽车钥匙）等。

与低频标签相关的国际标准有：ISO11784/11785（用于动物识别）、ISO18000-2（125-135 kHz）。

低频标签有多种外观形式，应用于动物识别的低频标签外观有：项圈式、耳牌式、注射式、药丸式等。

典型应用的动物有牛、信鸽等。

低频标签的主要优势体现在：标签芯片一般采用普通的CMOS工艺，具有省电、廉价的特点；工作频率不受无线电频率管制约束；可以穿透水、有机组织、木材等；非常适合近距离的、低速度的、数据量要求较少的识别应用（例如：动物识别）等。

低频标签的劣势主要体现在：标签存贮数据量较少；只能适合低速、近距离识别应用；与高频标签相比：标签天线匝数更多，成本更高一些；3．中高频段射频标签中高频段射频标签的工作频率一般为3MHz ~ 30MHz。

新大陆1500扫描枪设置说明书

NLS-HR15
(NLS-HR15XX-3E)
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请您在使用本手册描述的产品前仔细阅读手册的所有内容，以保障产品的安全有效地使用。阅读后请将本手册妥善保存以备下次使用时查询。请勿自行拆卸终端或撕毁终端上的封标，否则福建新大陆自动识别技术有限公司不承担保修或更换终端的责任。本手册中的图片仅供参考，如有个别图片与实际产品不符，请以实际产品为准。对于本产品的改良更新，新大陆自动识别技术有限公司保留随时修改文档而不另行通知的权利。本手册包含的所有信息受版权的保护，福建新大陆自动识别技术有限公司保留所有权利，未经书面许可，任何单位及个人不得以任何方式或理由对本文档全部或部分内容进行任何形式的摘抄、复制或与其它产品捆绑使用、销售。本手册中描述的产品中可能包括福建新大陆自动识别技术有限公司或第三方享有版权的软件，除非获得相关权利人的许可，否则任何单位或者个人不能以任何形式对前述软件进行复制、分发、修改、摘录、反编译、反汇编、解密、反向工程、出租、转让、分许可以及其它侵犯软件版权的行为。福建新大陆自动识别技术有限公司对本声明拥有最终解释权。
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IC卡基础知识培训教材428

第一章IC卡基础知识一、射频卡的一些基础知识（一）频率（f）1、物理中频率的单位是赫兹（Hz），简称赫。

2、频率单位：赫(Hz)、千赫（KHz）、兆赫（MHz）、吉赫（GHz）等。

3、单位换算：1KHz=1000Hz1MHz=1000KHz=1000000Hz1GHz=1000000KHz（二）常见射频卡的频率1、射频卡，学名叫“非接触式卡”。

虽然有的人把射频卡叫做IC卡，但因为接触式IC卡也叫IC卡，同时射频IC卡一般指指高频卡，而ID卡习惯叫低频卡，所以还是把非接触式的芯片卡叫为射频卡或非接触式卡来得直接一些。

2、典型的射频卡按戴波频率分为低频射频卡、高频射频卡、超高频射频卡和微波射频卡。

①、低频射频卡的频率为125~134.2KHz（单位：千赫），也称低频率（LF），如EM4100型号的ID卡、T5557卡、EM4305、TI的RI-TRP-R4FF低频只读卡、TI的RI-TEP-W4FF 低频读写卡、HID1326低频薄卡等。

一般为无源被动卡（卡内没有装电池）。

②、高频射频卡的频率为13.56MHz（单位：兆赫），也称高频率（HF），如MF1卡、I-CODE-II卡。

一般为无源卡。

一般为无源被动卡（卡内没有装电池）。

③、超高频射频卡的频率为433.92MHz（单位：兆赫），也称超高频的频率（超高频），如UCODE卡。

433.92MHz一般为有源主动卡（卡内装电池），860~960MHz一般为无源被动卡（卡内没有电池）。

[备注：国内超高频卡与无线电频带的叫法有一定区别。

]④、微波卡的频率为2.45GHz、5.8GHz（单位：吉赫或千兆赫兹），也称微波（uW），如EM4122中的一种微波卡。

2.45GHz、5.8GHz一般为有源主动卡（卡内装电池）。

[备注，微波卡与无线电频带的叫法有一定区别。

]⑤、另有些实验性的射频卡频率：27.125Hz、40.68MHz、24.125GHz等。

（三）储存容量单位的含义b:bit,位，计算机中表示信息的最小单位，1位即一个二进制基本元素（0或1）。

ZL38065GD中文资料(Zarlink Semiconductor)中文数据手册「EasyDatasheet - 矽搜」

图 2 - 100引脚 LQFP
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ZL38065
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1.0设备概述. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 1.1自适应滤波器. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 1.2双方通话检测. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 1.3路径变化检测. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 1.4非线性处理器（NLP）. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 1.5禁用音频检测器. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 1.6不稳定性检测. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 1.7窄带信号检测器（NBSD）. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 1.8偏移空筛选器. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 1.9级可调焊盘. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 1.10 ITU-T G.168合规性. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14

超热电源平板系统消耗材料指南说明书

Consumable care guideOverviewA plasma system is only as good as the consumable parts in thetorch. While changing consumables frequently will ensure exceptional cut quality, changing consumables before the end of their life is costly. That’s why understanding how consumables work is a necessary first step to optimizing their performance.This guide will help you:• Identify different consumable types, their features, and identify consumable wear• Find all of the relevant consumable information to properly assemble any Hypertherm torch• Establish common practices and daily maintenance routines and accurately evaluate and track consumable performanceContents1 The torch body2 The electrode3 The nozzle4 The swirl ring5 The shield6 Inner retaining cap7 Outer retaining cap8 Consumable installation8Tracking and evaluating performanceWater tubeThe water tube is crucial for effective electrode cooling.ElectrodeThe primary function of theelectrode is to provide power to the plasma arc. It is the starting point and electrical contact point of the plasma arc.Swirl ringThe main function of the swirl ring is to control the swirling action of the plasma gas flow around the electrode in order to center the cutting arc on the electrode and through the nozzle, and to constrict the cutting arc for faster cut speeds and thicker cut capability.NozzleThe primary function of the nozzle is to shape, direct, and constrict the plasma arc.Nozzle capThe inner retaining cap’s primary function is to hold the nozzle and swirl ring in place while directing coolant flow to the exterior of the nozzle.ShieldThe main function of the shield is to protect and cool the other consumables, especially the nozzle from molten splatter. In some cases, the shield also contributes to theswirling action of the plasma gas.Shield capThe outer retaining cap holds the shield in place over the nozzle (or inner retaining cap, if applicable) and directs secondary gas or shield gas to the shield.The torch bodyThe base of your consumable stack‑up is the torch body. The torch body is a precision manufactured device that serves as the working end of the plasma cutting system. Among other things, the torch body:• Holds the consumable parts in perfect alignment• Provides pre‑flow, plasma gas, and shield gas to the consumables• Delivers the cutting current to the electrodeThe key to long torch body life is cleanliness. Dirt and/ o r greaseon the inner parts of the torchcan eventually cause internal arcing, misfires, and possible torch failure.Use a clean cloth to clean the inside of the torch and use compressed air at a low pressure to blow debris off the threads.You will want to inspect the o‑rings found in your torch for any cracks or tears and replace if needed. When re‑installing or replacing the o‑rings, you may find it helpful to use a silicone lubricant. Put a small amount on your index finger and then rub it together with your thumb. Now apply the thinfilm to all the o‑rings. Youwant the o‑ring to look wetor shiny. If you can see a physical build‑up of siliconeleft behind, you haveapplied too much. Siliconecan clog or plug ports andfor that reason you needto be especially carefulwith its application around the swirl ring so that the gas flow will work properly. Silicone lubricant, part number 027055, is available through Hypertherm’s network of partners. Hypertherm does not recommend the use of substitutes, like petroleum‑based lubricants, as they can cause fires within the torch. If you have a liquid cooled torch you will find a removable cylindrical component called a water tube.The water tube is crucial foreffective electrode cooling.It is an important componentthat should be checkedduring regularly scheduledmaintenance. If your watertube is damaged and needsto be replaced, rememberto lubricate the small o‑ringfound on the base of the tube.1The electrodeThe primary function of the electrode in any plasma cutting torch is to provide power to the plasma arc. It is the starting point and electrical contact point of the plasma arc. One of the main features ofthe electrode is the plasma arc attachment point. The attachment point is a small cylindrical insert in the tip of the electrode made of an element with a very high melting point such as tungsten or hafnium.This insert must withstand the extreme heat of the plasma arc. Normal electrode wear can be observed by examining the insert.As electrodes are used, the insert will slowly erode, forming a small pit on the top of the electrode. For most of our systems, our recommendation is to change out your electrode when the pit depth gets to 1 mm (0.040") if using a standard copper electrode and twice that, to 2 mm (0.080"), if using a silver electrode. Still, since every plasma system is different, itis important to read your owner’s manual for recommended pit depth measurements. For example, if you are using an XPR™ system you can go to 1.25 mm (0.050") if cutting between 130 and 300 amps, and to 1.5 mm (0.060") if cutting at 300 amps. Electrode pit depth can simply and accurately be measured using a dial indicator. Regularly checking pit depth will help you maximize theuseful life of your electrodes.Normal wear Excessive wear Excessive electrode wear reduces cut quality and increases the risk of catastrophic electrode failure that may damage other consumables and/ or the torch.Premature electrode wear is commonly caused by:• Mismatching torch parts• Incorrect gas flow settings• Insufficient coolant flow (if using a liquid‑cooled torch)• Gas leaks or restrictions, such as kinked or split hoses• Build‑up of moisture and contaminates in the plasma gasTo avoid buildup of contaminates, always make sure that the pressurized gas or shop air you are using is clean and dry.2The nozzleA new nozzle has a perfectly round orifice with sharp inside and outside edges, ensuring excellent cut quality. The most common issue affecting nozzle performance is the incorrect match‑up of consumables. Nozzles can also be damaged by the following:• Piercing and cutting too close to the work piece• Piercing metal thicker than the maximum recommended thickness • Incorrect gas settings• Amperage or current that is too high • Using the electrode beyond its life • A pierce delay that is too short or long when mechanized cuttingTo ensure the best cut quality, operators should replace the nozzle if the orifice:• Is nicked or notched• Is out‑of‑round or oval• Has rounded edgesWe recommend changing the nozzle and electrode as a set to ensure thebest cut quality.3The swirl ringThe main function of the swirl ring is to control the swirling action of the plasma gas flow around the electrode. It does this in order to:• Center the cutting arc on the electrode and through the nozzle • Constrict the cutting arc for faster cut speeds and thicker cut capability The swirl ring has small angled holes and, on certain models, one or more o‑ring seals typically made of ceramic or thermoplastic. Ceramic swirl rings are fragile. Accidentally dropping one on the floor may cause a chip or crack, requiring replacement.During each consumable change, check the swirl ring holes to ensure they are clear of dirt and o‑ring lubricant. Clogged swirl holes will decrease cut quality and shorten electrode and nozzle life.When treated properly, swirl rings will last through several electrodeand nozzle changes.4The shieldThe shield has several important functions.• The shield protects the other consumables, especially the nozzle from molten splatter• It helps cool the nozzle• It contributes to good cut quality and fast cut speeds• When using a hand torch, the shield enables drag‑cuttingThe shield has a main orifice that aligns with the nozzle orifice and may have additional vent holes around the center. The most common issues associated with the shield are damage to the main orifice or clogging of the vent holes. Both issues can cause performance problems.The shield may be wearing when you spot signs of dross aroundthe orifice. This indicates that the workpiece may have been pierced with the torch too close to the plate. Sometimes you can easily pick or brush the dross off the shield with a wire brush. If the orifice is still perfectly round then the shield can still be used. If not, the shield shouldbe replaced.5Inner retaining cap Some larger plasma systems, such as HyPerformance® andX‑Definition® plasma systems,use an inner retaining cap in the consumable stack‑up. The inner retaining cap’s primary function is to hold the nozzle and swirl ring in place while directing coolant flow to the exterior of the nozzle.The most common feature of the inner retaining cap are the vent holes.It is essential to keep the threads clean. Dirt or grease on the ring can burn the cap. Dirt will damage threads over time, requiring the cap to be replaced prematurely.When treated with care, the inner retaining cap can last through several electrode and nozzlechange‑outs.6Outer retaining cap The outer retaining cap holds the shield in place over the nozzle(or inner retaining cap, if applicable) and directs secondary gas or shield gas to the shield.The outer retaining cap should be inspected where the shield seals to ensure that the threads and o‑rings are in good shape. Make sure threads are free of dirt to prevent thread damage. The outer retaining cap can last through several sets of electrode andnozzle replacements.78Tracking and evaluating performanceTracking and evaluating performance is an important and critical process that helps you determine if you are getting the life your consumables are designed to deliver.Consumable life is driven by many factors, including:• Cut speeds • Metal thickness • Duration of each cut • Amperage settingsWe recommend tracking the number of starts and arc‑on time for each consumable change to gaugeconsumable life over time. For a true comparison, try to compare similar jobs in which you are cutting the same metal thickness at the same amperage for the same cut duration. Hypertherm provides plasma cut data collection sheets to assist you with tracking performance.Tracking consumable life will allow you to measure how efficiently you are using your consumables so they don’t prematurely end up in the scrap bucket.Consumable installationUsing the correct consumables and matching them togetherappropriately is critical to achieving optimal cutting performance. Proper installation of your consumables involves:• Using the correct consumable part numbers• Making sure parts are not over‑tightened• Using o‑ring lubricant on the consumable and torch o‑rings • Keeping all consumable surfaces clean of dust and dirtConsumables are specific to amperage, the material you are cutting, and application.People commonly use the wrong consumables so be sure to confirm that the consumables you are installing match the part numbers shown in your owner's manual. Hypertherm laser marks each consumable with its part number to make this easy to do. Also, make sure you install consumables in the right order. Again, your owner's manual is a great resource.If you’ve lost your manual, you can download a new one at . You can also download a catalog with torch and consumable part numbers. Choose the About consumables section underneath the Products tab.9Hypertherm is a trademark of Hypertherm, Inc. and may be registered in the United States and/or other countries. All other trademarks are the property of their respective owners.Environmental stewardship is one of Hypertherm’s core values, and it is critical to oursuccess and our customers’ success. We are striving to reduce the environmental impact of everything we do. For more information: /environment.© 6/2020 Hypertherm, Inc. Revision 2895540For more information on how to optimize your cutting operations, visit: P L A S MA |L A S E R |W A T E R J E T |A U T O MA T I O N |S O F T W A R E |C O N S U MA B L E S。

华工集散系统及现场总线ppt

TDC-3000UCN网络组成
TDC-3000UCN网络组成： 1、过程管理站PM 采用多微处理器，集成了控制和数据采集功能，采用 32位微处理器 2、先进过程管理站APM PM的改进型产品 3、逻辑管理站LM 实现逻辑控制，可与PM/APM进行点对点通讯 4、UCN网路
TDC-3000UCN网络特性
TDC-3000LCN网络特性
局部控制网络（LCN）特性： LCN网络根据IEEE 802.4标准采用令牌式通讯协议（令牌总线网络）； LCN网络是一种短程高速通讯网络，通讯速度为5MB/s ，距离不大于300m，通过LCNE进行网络扩展，最远距离可达4.9km； LCN网络最多可挂接LCN设备64台，其中HG最多可接 10个，NIM最多可接10个； LCN网络通过HG接口与HW网络进行通讯； LCN网络通过NIM接口和UCN网络进行通讯。
4、现场总线控制系统（Fieldbus Control System, FCS）
控制网络向下延伸，现场仪表数字化、智能化
5、基于物联网（Internet of Things, IOT）的网络化控制系统（NCS）
DCS发展趋势
1、开放化开放系统互联(OSI)、网关 2、小型化 IPC(TP/OP)+PLC(PID) 3、数字化 DCS 现场总线控制系统（FCS） 4、智能化 5、PLC和DCS相互渗透、融合 6、管控一体化 CIMS、CIPS、TIA 、FAS
介质访问控制（MAC）方式
通信介质访问控制（MAC）方式： 1、主/从方式
RS-485，ASI总线，TDC-3000BASIC数据高速通路（HighWay, HW）
2、令牌环方式
TDC-3000LCN，TDC-3000UCN，FF总线，PROFIBUS总线，光纤分布式数据接口FDDI

微专米 G.Fast 双频通道线驱动器数据表说明书

Le87282G.FastDual Channel Line DriverData Sheet FEATURES•Supports two independent channels ofhigh frequency G.Fast transmission•Supports VDSL2 and ADSL2+ operation•Very low power dissipation–Class AB operation• 5 programmable states–Independent channel control•No external gain resistors required•Operates from a wide range of supply voltages•Small footprint package–28-pin (4 mm x 5 mm) QFN•RoHS compliantAPPLICATIONS•G.Fast Line Driver•VDSL2 Line Driver•ADSL2+ CPE Line DriverDESCRIPTIONThe Le87282 is a dual channel differential amplifierdesigned to drive G.Fast transmission signals as well ashigher power VDSL2 and ADSL2+ signals, all with verylow power dissipation. The Le87282 contains two pairsof wideband amplifiers designed with Microsemi’s HV15Bipolar SOI process for low power consumption.The line driver gain is fixed internally. The amplifiers arepowered from a single supply.The device can be programmed to one-of-three presetBias levels or to impedance controlled Disable orStandby states. Each channel can be controlledindependently. The control pins respond to input levelsthat can be generated with a standard tri-state GPIO.The Le87282 is available in a 28-pin (4 mm x 5 mm)QFN package with exposed pad for enhanced thermalconductivity.ORDERING INFORMATIONLe87282MQC 28-pin QFN Green Package TrayLe87282MQCT 28-pin QFN Green Package Tape and ReelThe green package meets RoHS2 Directive2011/65/EU of theEuropean Council to minimize the environmental impact of electricalequipment.Version 6 January 2019Document Code PD-000286414TABLE OF CONTENTSFeatures. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1 Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1 Ordering Information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1 Block Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1 Connection Diagram. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3 Pin Descriptions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .4 Absolute Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .5 Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .5 Package Assembly. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .5 Operating Ranges . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .5 Device Specifications. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .6 State Control. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .7 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .7 Line Driver Protection. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8 Physical Dimensions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .9 28-pin QFN . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .9CONNECTION DIAGRAMNote:1.Pin 1 is marked for orientation.2.The Le87282 device incorporates an exposed die pad on the underside of its package. The pad acts as a heat sink and must be connectedto a copper plane through thermal vias, for proper heat dissipation. It is electrically isolated and maybe connected to GND.PIN DESCRIPTIONSPin #Pin Name Type Description1IREF Input Device internal reference current. Connect a resistor (R REF ) to GND.2VINA Input Non-inverting input of amplifier A 3VINB Input Non-inverting input of amplifier B 4GND Ground Reference ground5GND 6VINC Input Non-inverting input of amplifier C 7VIND InputNon-inverting input of amplifier D 8NC No internal connection 9S2Input Channel 2 state control 10VOUTD Output Amplifier D output11EN2Input Enable Channel 2 transmission 12VOUTC Output Amplifier C output13NC No internal connection14NC 15NC 16NC 17GND GroundReference ground 18VS PowerPower Supply19VS 20VS 21GND GroundReference ground22NC No internal connection23NC 24NC 25VOUTB Output Amplifier B output26EN1Input Enable Channel 1 transmission 27VOUTA Output Amplifier A output 28S1InputChannel 1 state controlExposed padElectrically isolated thermal conduction pad, can be groundedABSOLUTE MAXIMUM RATINGSStresses above the values listed under Absolute Maximum Ratings can cause permanent device failure.Functionality at or above these limits is not implied. Exposure to absolute maximum ratings for extended periods can affect device reliability .Notes:1.Continuous operation above 145°C junction temperature may degrade device reliability.2.See Thermal Resistance .3.No air flow.Thermal ResistanceThe thermal performance of a thermally enhanced package is assured through optimized printed circuit board layout.Specified performance requires that the exposed thermal pad be soldered to an equally sized exposed copper surface, which, in turn, conducts heat through multiple vias to larger internal copper planes.Package AssemblyThe green package devices are assembled with enhanced, environmental compatible lead-free, halogen-free, and antimony-free materials. The leads possess a matte-tin plating which is compatible with conventional board assembly processes or newer lead-free board assembly processes.Refer to IPC/JEDEC J-Std-020 Table 4 for recommended peak soldering temperature and Table 5-2 for the recommended solder reflow temperature profile.OPERATING RANGESMicrosemi guarantees the performance of this device over the industrial (-40°C to 85°C) temperature range by conducting electrical characterization over each range and by conducting a production test with single insertion coupled with periodic sampling. These characterization and test procedures comply with the Telcordia GR-357-CORE Generic Requirements for Assuring the Reliability of Components Used in Telecommunications Equipment.Storage Temperature-65 ≤ T A ≤ +150°C Operating Junction Temperature (Note 1)-40 ≤ T j ≤ +150°C VS with respect to GND-0.3 V to +16 V Control inputs with respect to GND -0.3 V to 4 V Continuous Driver Output Current100 mA Maximum device power dissipation, continuous (2) - T A = 85°C, P D 1.7W Junction to ambient thermal resistance (2,3), θJA 36.0°C/W Junction to board thermal resistance (2), θJB18.3°C/W Junction to case bottom (exposed pad) thermal resistance, θJC (BOTTOM)8.9°C/W Junction-to-top characterization parameter (2), ψJT 1.2°C/WESD Immunity (Human Body Model)JESD22 Class 2 compliant ESD Immunity (Charge Device Model)JESD22 Class IV compliantAmbient temperature T A-40°C to +85°C Power SupplyVS with respect to GND:Typical usage+8V to +15V,+12V ± 5%DEVICE SPECIFICATIONSTypical Conditions: As shown in the basic test circuit (Figure 1) with VS = +12 V, R REF = 75 k Ω, and T A = 25°C.Min/Max Parameters: T A = -40 to +85°C.Figure 1.Basic Test Circuit - Channel 1 ShownTable 1.Electrical SpecificationsSymbolParameter Description ConditionMinTyp Max Unit NotesSupply Characteristics P VS Supply Power (per channel)Transmission, P LINE = 4 dBm 470600mW Receive period, Disable state 175250mW I VSSupply Current (per channel)Standby State11.5mAControl Input (S1, S2, EN1, EN2 ) Specifications V IH Input High Voltage 2.03.3 3.6V V IM Input Middle Voltage 1.5V V ILInput Low Voltage -0.300.8V Enable Time 500ns Disable TimeDisable state500nsAmplifier CharacteristicsDifferential Gain VOUT/VIN 18.318.819.1dB Gain Flatness2 − 106 MHz-1.51dB 1V O Output Voltage 10V I O Output Current 150mA 1Z I Input Impedance Differential 131518k ΩZ O Output Impedance Disable state 60ΩAmplifier Dynamic CharacteristicsNoise Input Referred Noise 2 - 106 MHz915nV/1TSDThermal Shutdown Temperature170°CNotes: 1. Not tested in production. Guaranteed by characterization and design.HzSTATE CONTROLS1, EN1 and S2, EN2 pins are used as combinatorial logic inputs to control the line driver operating states. Table 2 and Table 3 show the programmable states for each channel.S1, EN1 and S2, EN2 are tri-state inputs that accept three operating levels. These pins have internal resistors tied to +1.5 V which force a middle logic input level when the control to these pins is tri-stated.Table 2.Channel 1 Control MatrixS1EN1State ApplicationX0DisableX Open Standby01Enable Low Bias ADSL2+Open1Enable Medium Bias VDSL211Enable Full Bias G.FastTable 3.Channel 2 Control MatrixS2EN2State ApplicationX0DisableX Open Standby01Enable Low Bias ADSL2+Open1Enable Medium Bias VDSL211Enable Full Bias G.FastDisable State: Amplifier output = VS/2. The Disable state should be used during the receive period. The device presents a controlled low impedance to the line during this state.Standby State: Amplifier bias current removed. This is the lowest power state. Amplifier output is high impedance. Gain-setting feedback resistors are still connected across amplifier output pins, creating 1300ohm differential impedance at pins.Bias States: Line Driver is active for transmission. States are different only in the amount of bias current to the amplifiers, and therefore power consumption. There is a trade-off between bias current and bandwidth. APPLICATIONSThe Le87282 integrates two sets of high-power line driver amplifiers that can be connected for half-duplex differential line transmissions. The amplifiers are designed to be used with signals up to 106 MHz with low signal distortion. The Le87282 can be used for G.Fast applications as illustrated in Figure 2, or it can be used for VDSL2 or ADSL2+ applications. For VDSL2 or ADSL2+ applications, the output resistor values need to be reduced in order to achieve the desired load power of these applications.Figure 2 shows a G.Fast application circuit with amplifiers A and B in transmission and amplifiers C and D in the receive period (Disable state). Amplifiers C and D drive 0 ohms in the Disable state.Figure 2.Typical G.Fast Application CircuitInput ConsiderationsThe driving source impedance should be less than 100 nH to avoid any ringing or oscillation.Output Driving ConsiderationsThe internal metallization is designed to carry up to about 100 mA of steady DC current and there is no current limit mechanism. The device does feature integrated thermal shutdown protection however with hysteresis. Driving lines with no series resistor is not recommended.Power Supplies and Component PlacementThe power supplies should be well bypassed close to the Le87282 device. A 2.2 µF tantalum capacitor and a 0.1 µF ceramic capacitor for the VS supply is recommended.Line Driver ProtectionHigh voltage transients such as lightning can appear on the telephone lines. Transient protection devices should be used to absorb the transient energy and clamp the transient voltages. The series output termination resistors limit the current going into the line driver and internal clamps. The protection scheme depends on the type of data transformer used and the line protection components used in the front of the data transformer.PHYSICAL DIMENSIONSNote:Packages may have mold tooling markings on the surface. These markings have no impact on the form, fit or function of the de-vice. Markings will vary with the mold tool used in manufacturing.Information relating to products and services furnished herein by Microsemi Corporation or its subsidiaries (collectively “Microsemi”) is believed to be reliable. However, Microsemi assumes no liability for errors that may appear in this publication, or for liability otherwise arising from the application or use of any such information, product or service or for any infringement of patents or other intellectual property rights owned by third parties which may result from such application or use. Neither the supply of such information or purchase of product or service conveys any license, either express or implied, under patents or other intellectual property rights owned by Microsemi or licensed from third parties by Microsemi, whatsoever. Purchasers of products are also hereby notified that the use of product in certain ways or in combination with Microsemi, or non-Microsemi furnished goods or services may infringe patents or other intellectual property rights owned by Microsemi.This publication is issued to provide information only and (unless agreed by Microsemi in writing) may not be used, applied or reproduced for any purpose nor form part of any order or contract nor to be regarded as a representation relating to the products or services concerned. The products, their specifications, services and other information appearing in this publication are subject to change by Microsemi without notice. No warranty or guarantee express or implied is made regarding the capability, performance or suitability of any product or service. Information concerning possible methods of use is provided as a guide only and does not constitute any guarantee that such methods of use will be satisfactory in a specific piece of equipment. It is the user’s responsibility to fully determine the performance and suitability of any equipment using such information and to ensure that any publication or data used is up to date and has not been superseded. Manufacturing does not necessarily include testing of all functions or parameters. These products are not suitable for use in any medical and other products whose failure to perform may result in significant injury or death to the user. All products and materials are sold and services provided subject to Microsemi’s conditions of sale which are available on request.For more information about all Microsemi productsvisit our website at TECHNICAL DOCUMENTATION – NOT FOR RESALE© 2019 Microsemi Corporation. All rights reserved. Microsemi and the Microsemi logo are trademarks of Microsemi Corporation. All other trademarks and service marks are the property of their respective owners.Microsemi Corporation (NASDAQ: MSCC) offers a comprehensive portfolio of semiconductor solutions for: aerospace, defense and security; enterprise and communications; and industrial and alternative energy markets. Products include mixed-signal ICs, SoCs, and ASICs;programmable logic solutions; power management products; timing and voice processing devices; RF solutions; discrete components; and systems. Microsemi is headquartered in Aliso Viejo, Calif. Learn more at .Microsemi Corporate HeadquartersOne Enterprise, Aliso Viejo CA 92656 USA Within the USA: +1 (949) 380-6100Sales: +1 (949) 380-6136。

FTZ6.8ET148;中文规格书,Datasheet资料

㪈㪇㪅㪇㪇㪈
㪜㪣㪜㪚㪫㪩㪦㪪㪫㪘㪫㪠㪚㪛㪠㪪㪚㪟㪘㪩㪞㪜㩷㪫㪜㪪㪫㩷㪜㪪㪛㩿㪢㪭㪀
Rev.A
2/2
/
Appendix
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design.

HZM6.8MWA中文资料

URL
NorthAmerica Europe Asia Japan
: : : :
/ /hel/ecg .sg/grp3/sicd http://www.hitachi.co.jp/Sicd/indx.htm
Typ
Max 7.00 2 130 30
Unit V µA pF Ω kV
Test Condition I Z = 5 mA, 40 ms pulse VR = 3.5 V VR = 0V, f = 1 MHz I Z = 5 mA C = 150pF, R = 330 Ω, Both forward and reverse direction 10 pulse
Notes : 1. Per one device. 2. Failure criterion ; IR > 2 µA at V R = 3.5 V. 3. Between cathode and anode
2
HZM6.8MWA
Main Characteristic
10 -2 10 10 (A) 10 Iz Zener Current 10 10 10
Ordering Information
Type No. HZM6.8MWA Laser Mark 68M Package Code MPAK
Outline
3
2
1
(Top View)
1 Cathode 2 Cathode 3 Anode
HZM6.8MWA
Absolute Maximum Ratings (Ta = 25°C)
Electrical Characteristics (Ta = 25°C) *1
Item Zener voltage Reverse current Capacitance Dynamic resistance ESD-Capability * *

SIM SAM 6 8Pin 机械插槽卡插座说明书

CCM03-3003LFT R102 Sim card connector 8 inlay contacts with hinged cover
CCM03-3004LFT R102 Sim card connector 8 inlay conatcts with hinged cover with plastic peg
Fixed cover: 3N max
Card extraction force
Hinged cover: 1N max Fixed cover: 0,80N min / 3N max
Contact force
0,25N min / 0,50N max
Slide locking force
Soldering Process
Compatible with lead free SMT soldering process
SIM/SAM
How To Order Part number list is shown below. For individual part details, please refer to the following pages.
5,08 3,7 9,65
10,16 20,32
6x
1,3
0,7 25˚
S 3,5
Slider locked
29,65 13,8
2,45 R 1,9
1,25 0,7
ø1±0,05 DETAIL A Scale 5
1,25
11,25 17,2
Normally open 100 mΩ max 250 Vrms min 1 mA min / 10m A max 0.2 VA
Environment Data

HZB6.8ZMFA中文资料

HZB6.8ZMFA
Disclaimer
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party’s rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi’s sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor products.

ZXMN6A08GTA;中文规格书,Datasheet资料

ZXMN6A08G60V SOT223 N-channel enhancement mode MOSFETSummaryDescriptionThis new generation trench MOSFET from Zetex features a unique structure combining the benefits of low on-resistance and fast switching, making it ideal for high efficiency power management applications.Features•Low on-resistance •Fast switching speed •Low threshold •Low gate drive •SOT223 packageApplications•DC-DC converters•Power management functions •Disconnect switches •Motor controlOrdering informationDevice markingZXMN 6A08V (BR)DSS R DS(on) (⍀)I D (A)600.080 @ V GS = 10V 5.30.150 @ V GS = 4.5V2.8DeviceReel size (inches)Tape width (mm)Quantity perreelZXMN6A08GTA 7121,000ZXMN6A08GTC13124,000Absolute maximum ratingsNOTES:(a)For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.(b)For a device surface mounted on FR4 PCB measured at t Յ10 sec.(c)Repetitive rating - 25mm x 25mm FR4 PCB, D=0.02, pulse width 300␮s - pulse width limited by maximum junction temperature.ParameterSymbol Limit Unit Drain-source voltage V DSS 60V Gate-source voltage V GS ± 20V Continuous drain current@ V GS = 10V; T amb = 25°C (b)I D5.3A@ V GS = 10V; T amb = 70°C (b) 4.2@ V GS = 10V; T amb = 25°C (a)3.8Pulsed drain current (c)I DM 20A Continuous source current (body diode)(b)I S 2.1A Pulsed source current (body diode)(c)I SM 20A Power dissipation at T amb = 25°C (a) P D 2W Linear derating factor16mW/°C Power dissipation at T amb = 25°C (b) P D 3.9W Linear derating factor31mW/°C Operating and storage temperature rangeT j , T stg -55 to +150°C Thermal resistanceParameterSymbol Limit Unit Junction to ambient (a)R ⍜JA 62.5°C/W Junction to ambient (b)R ⍜JA32°C/WTypical characteristicsElectrical characteristics (at T amb = 25°C unless otherwise stated)Parameter SymbolMin.Typ.Max.UnitConditionsStaticDrain-source breakdown voltageV (BR)DSS 60V I D = 250␮A, V GS =0V Zero gate voltage drain currentI DSS 0.5␮A V DS = 60V, V GS =0V Gate-body leakage I GSS 100nA V GS =±20V, V DS =0V Gate-source threshold voltageV GS(th)1V I D = 250␮A, V DS =V GS Static drain-source on-state resistance (*)R DS(on)0.080⍀V GS = 10V, I D = 4.8A 0.150⍀V GS = 4.5V, I D = 4.2A Forward transconductance (*) (‡)NOTES:(*)Measured under pulsed conditions. Pulse width Յ300␮s; duty cycle Յ2%.g fs6.6SV DS = 15V, I D = 4.8ADynamic (‡)Input capacitance C iss 459pF V DS = 40V, V GS =0V f=1MHzOutput capacitanceC oss 44.2pF Reverse transfer capacitance C rss24.1pFSwitching (†) (‡)(†)Switching characteristics are independent of operating junction temperature.(‡)For design aid only, not subject to production testing.Turn-on delay time t d(on) 2.6ns V DD = 30V, I D = 1.5A R G ≅6.0⍀, V GS = 10VRise timet r 2.1ns Turn-off delay time t d(off)12.3ns Fall time t f 4.6ns Gate charge Q g 4.0nC V DS = 30V, V GS = 5V I D = 1.4ATotal gate charge Q g 5.8nC V DS = 30V, V GS = 10V I D = 1.4AGate-source charge Q gs 1.4nC Gate drain charge Q gd1.9nCSource-drain diode Diode forward voltage (*)V SD 0.88 1.2V T j =25°C, I S = 4A, V GS =0VReverse recovery time (‡)t rr 19.2ns Tj=25°C, I S = 1.4A,di/dt=100A/␮sReverse recovery charge (‡)Q rr30.3nCTypical characteristicsTypical characteristicsIntentionally left blankFor international sales offices visit /officesZetex products are distributed worldwide. For details, see /salesnetworkThis publication is issued to provide outline information only which (unless agreed by the company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contact or be regarded as a representation relating to the products or services concerned.The company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service.EuropeZetex GmbHStreitfeldstraße 19D-81673 München GermanyTelefon: (49) 89 45 49 49 0Fax: (49) 89 45 49 49 49europe.sales@AmericasZetex Inc700 Veterans Memorial Highway Hauppauge, NY 11788USATelephone: (1) 631 360 2222Fax: (1) 631 360 8222usa.sales@Asia PacificZetex (Asia Ltd)3701-04 Metroplaza Tower 1Hing Fong Road, Kwai Fong Hong KongTelephone: (852) 26100 611Fax: (852) 24250 494asia.sales@Corporate HeadquartersZetex Semiconductors plcZetex Technology Park, Chadderton Oldham, OL9 9LL United KingdomTelephone: (44) 161 622 4444Fax: (44) 161 622 4446hq@Package outline - SOT223Note: Controlling dimensions are in millimeters. Approximate dimensions are provided in inchesDIM Millimeters Inches DIM Millimeters Inches Min Max Min Max MinMaxMinMaxA - 1.80-0.071e 2.30 BSC 0.0905 BSC A10.020.100.00080.004e1 4.60 BSC 0.181 BSC b 0.660.840.0260.033E 6.707.300.2640.287b2 2.90 3.100.1140.122E1 3.30 3.700.1300.146C 0.230.330.0090.013L 0.90-0.355-D6.306.700.2480.264-----分销商库存信息: DIODESZXMN6A08GTA。

3GPP 5G基站(BS)R16版本一致性测试英文原版(3GPP TS 38.141-1)

4.2.2
BS type 1-H.................................................................................................................................................. 26
4.3
Base station classes............................................................................................................................................27
1 Scope.......................................................................................................................................................13
All rights reserved. UMTS™ is a Trade Mark of ETSI registered for the benefit of its members 3GPP™ is a Trade Mark of ETSI registered for the benefit of its Members and of the 3GPP Organizational Partners LTE™ is a Trade Mark of ETSI registered for the benefit of its Members and of the 3GPP Organizational Partners GSM® and the GSM logo are registered and owned by the GSM Association

UMZ6.8ENTR;中文规格书,Datasheet资料

Zener diodeUMZ6.8ENz Application z Lead size figure (Unit : mm)Voltage regulation(Anode common twin type)z Features1) Small mold type. (UMD5)2) High reliability.z StructureSilicon epitaxial planerz Structurez Absolute maximum ratings (Ta=25°C)SymbolUnit P mW Tj °C Tstg °Cz Electrical characteristics (Ta=25°C)SymbolMin.Typ.Max.Unit ConditionsV Z 6.47-7.14V I Z =5mA I R --0.50µA V R =3.5V Z Z--40ΩI Z =5mADynamic impedance (*1) Total of 2 elementsZener voltage Reverse current Parameter Parameter Limits Power dissipation (*1)200Junction temperature 150Storage temperature -55 to +150UMZ6.8ENz Electrical characteristics curves11010010000.0010.11010001101000.11101515.51616.51717.51818.51919.52000.020.040.060.080.10.120.140.160.180.20.000010.00010.0010.010.1110100012340.010.111066.577.586.76.86.977.17.2REVERSE VOLTAGE : V R (V)V R -I R CHARACTERISTICSR E V E R S E C U R R E N T :I R (n A )R E V E R S E C U R R E N T :I R (n A )I R DISRESION MAPC A P A C I T A N C E B E T W E E N T E R M I N A L S :C t (p F )REVERSE VOLTAGE : V R (V)V R -Ct CHARACTERISTICSCt DISRESION MAPC A P A C I T A N C E B E T W E E N T E R M I N A L S :C t (p F )Z E N E R C U R R E N T :I z (m A )ZENER VOLTAGE : Vz(V)Vz-Iz CHARACTERISTICSVz DISRESION MAPZ E N E R V O L T A G E :V z (Ｖ)TIME:t(s)Rth-t CHARACTERISTICST R A N S I E N T T H A E R M A L I M P E D A N C E :R t h (°C /W )110100123456D Y N A M I C I M PE D A N C E :Z z (Ω)ZENER CURRENT(mA)Zz-Iz CHARACTERISTICSData SheetNoticeN o t e sNo copying or reproduction of this document, in part or in whole, is permitted without theconsent of ROHM Co.,Ltd.The content specified herein is subject to change for improvement without notice.The content specified herein is for the purpose of introd ucing ROHM's prod ucts (hereinafter"Products"). If you wish to use any such Product, please be sure to refer to the specifications,which can be obtained from ROHM upon request.Examples of application circuits, circuit constants and any other information contained hereinillustrate the standard usage and operations of the Products. The peripheral conditions mustbe taken into account when designing circuits for mass production.Great care was taken in ensuring the accuracy of the information specified in this document.However, should you incur any d amage arising from any inaccuracy or misprint of suchinformation, ROHM shall bear no responsibility for such damage.The technical information specified herein is intended only to show the typical functions of andexamples of application circuits for the Prod ucts. ROHM d oes not grant you, explicitly orimplicitly, any license to use or exercise intellectual property or other rights held by ROHM andother parties. ROHM shall bear no responsibility whatsoever for any dispute arising from theuse of such technical information.The Products specified in this document are intended to be used with general-use electronicequipment or devices (such as audio visual equipment, office-automation equipment, commu-nication devices, electronic appliances and amusement devices).The Products specified in this document are not designed to be radiation tolerant.While ROHM always makes efforts to enhance the quality and reliability of its Prod ucts, aProduct may fail or malfunction for a variety of reasons.Please be sure to implement in your equipment using the Products safety measures to guardagainst the possibility of physical injury, fire or any other d amage caused in the event of thefailure of any Product, such as derating, redundancy, fire control and fail-safe designs. ROHMshall bear no responsibility whatsoever for your use of any Product outside of the prescribedscope or not in accordance with the instruction manual.The Products are not designed or manufactured to be used with any equipment, device orsystem which requires an extremely high level of reliability the failure or malfunction of whichmay result in a direct threat to human life or create a risk of human injury (such as a medicalinstrument, transportation equipment, aerospace machinery, nuclear-reactor controller,fuel-controller or other safety device). ROHM shall bear no responsibility in any way for use ofany of the Products for the above special purposes. If a Product is intended to be used for anysuch special purpose, please contact a ROHM sales representative before purchasing.If you intend to export or ship overseas any Product or technology specified herein that maybe controlled under the Foreign Exchange and the Foreign Trade Law, you will be required toobtain a license or permit under the Law.Thank you for your accessing to ROHM product informations.More detail product informations and catalogs are available, please contact us.ROHM Customer Support System/contact/分销商库存信息: ROHMUMZ6.8ENTR。

HZM-N中文资料

HZM-N SeriesSilicon Epitaxial Planar Zener Diode for StabilizerADE-208-130C (Z)Rev. 3Features• Wide spectrum from 1.9V through 38V of zener voltage provide flexible application.• MPAK Package is suitable for high density surface mounting and high speed assembly. Ordering InformationType ser Mark Package CodeHZM-N Series Let to Mark Code MPAKOutlineAbsolute Maximum Ratings (Ta = 25°C)Item Symbol Value UnitPower dissipation Pd*200mWJunction temperature Tj150°CStorage temperature Tstg–55 to +150°CNote:See Fig. 3.HZM-N SeriesElectrical Characteristics (Ta = 25°C)Zener Voltage*Reverse Current Dynamic Resistance V Z (V)TestCondition I R (µA)TestCondition r d (Ω)TestCondition Type Grade Min Max I Z (mA)Max V R (V)Max I Z (mA)HZM2.0N B 1.90 2.2051200.51005HZM2.2N B 2.10 2.4051200.71005HZM2.4N B 2.30 2.605120 1.01005HZM2.7NB 2.50 2.9051201.01105B1 2.50 2.75B22.65 2.90HZM3.0NB 2.80 3.205501.01205B1 2.80 3.05B22.953.20HZM3.3NB 3.10 3.505201.01305B1 3.10 3.35B23.25 3.50HZM3.6NB 3.40 3.805101.01305B1 3.40 3.65B23.55 3.80HZM3.9NB 3.70 4.105101.01305B1 3.70 3.97B23.874.10HZM4.3NB 4.01 4.485101.01305B1 4.01 4.21B2 4.15 4.34B34.28 4.48HZM4.7NB 4.42 4.905101.01305B1 4.42 4.61B2 4.55 4.75B34.69 4.90HZM5.1NB 4.84 5.37551.51305B1 4.84 5.04B2 4.98 5.20B35.145.37Note:Tested with pulse (P W = 40ms)HZM-N SeriesElectrical Characteristics (Ta = 25°C) (cont)Zener Voltage*Reverse Current Dynamic Resistance V Z (V)TestCondition I R (µA)TestCondition r d (Ω)TestCondition Type Grade Min Max I Z (mA)Max V R (V)Max I Z (mA)HZM5.6NB 5.31 5.92552.5805B1 5.31 5.55B2 5.49 5.73B35.67 5.92HZM6.2NB 5.86 6.53523.0505B1 5.86 6.12B2 6.06 6.33B36.26 6.53HZM6.8NB 6.477.14523.5305B1 6.47 6.73B2 6.65 6.93B36.867.14HZM7.5NB 7.067.84524.0305B17.067.36B27.287.60B37.527.84HZM8.2NB 7.768.64525.0305B17.768.10B28.028.36B38.288.64HZM9.1NB 8.569.55526.0305B18.568.93B28.859.23B39.159.55HZM10NB 9.4510.55527.0305B19.459.87B29.7710.21B310.1110.55Note:Tested with pulse (P W = 40ms)HZM-N SeriesElectrical Characteristics (Ta = 25°C) (cont)Zener Voltage *Reverse Current Dynamic Resistance V Z (V)TestCondition I R (µA)TestCondition r d (Ω)TestCondition Type Grade Min Max I Z (mA)Max V R (V)Max I Z (mA)HZM11NB 10.4411.56528.0305B110.4410.88B210.7611.22B311.1011.56HZM12NB 11.4212.60529.0355B111.4211.90B211.7412.24B312.0812.60HZM13NB 12.4713.965210.0355B112.4713.03B212.9113.49B313.3713.96HZM15NB 13.8415.525211.0405B113.8414.46B214.3414.98B314.8515.52HZM16NB 15.3717.095212.0405B115.3716.01B215.8516.51B316.3517.09HZM18NB 16.9419.035213.0455B116.9417.70B217.5618.35B318.2119.03HZM20NB 18.8621.085215.0505B118.8619.70 B219.5220.39B320.2121.08Note:Tested with pulse (P W = 40ms)HZM-N SeriesElectrical Characteristics (Ta = 25°C) (cont)Zener Voltage*Reverse Current Dynamic Resistance V Z (V)TestCondition I R (µA)TestCondition r d (Ω)TestCondition Type Grade Min Max I Z (mA)Max V R (V)Max I Z (mA)HZM22NB 20.8823.175217.0555B120.8821.77B221.5422.47B322.2323.17HZM24NB 22.9325.575219.0605B122.9323.96B223.7224.78B324.5425.57HZM27N B 25.1028.902221.0702HZM30N B 28.0032.002223.0802HZM33N B 31.0035.002225.0802HZM36NB34.0038.002227.0902Note:Tested with pulse (P W = 40ms)HZM-N SeriesMARK CODEType Grade MARK No.Type Grade MARK No.Type Grade MARK No. HZM2.0N B 2 0 –HZM7.5N B17 5 1HZM20N B1 2 0 1 HZM2.2N B 2 2 –B27 5 2B2 2 0 2 HZM2.4N B 2 4 –B37 5 3B3 2 0 3 HZM2.7N B1 2 7 1HZM8.2N B18 2 1HZM22N B1 2 2 1 B2 2 7 2B28 2 2B2 2 2 2 HZM3.0N B1 3 0 1B38 2 3B3 2 2 3 B2 3 0 2HZM9.1N B19 1 1HZM24N B1 2 4 1 HZM3.3N B1 3 3 1B29 1 2B2 2 4 2 B2 3 3 2B39 1 3B3 2 4 3 HZM3.6N B1 3 6 1HZM10N B1 1 0 1HZM27N B 2 7 –B2 3 6 2B2 1 0 2HZM30N B 3 0 –HZM3.9N B1 3 9 1B3 1 0 3HZM33N B 3 3 –B2 3 9 2HZM11N B1 1 1 1HZM36N B 3 6 –HZM4.3N B1 4 3 1B2 1 1 2B2 4 3 2B3 1 1 3B3 4 3 3HZM12N B1 1 2 1HZM4.7N B1 4 7 1B2 1 2 2B2 4 7 2B3 1 2 3B3 4 7 3HZM13N B1 1 3 1HZM5.1N B1 5 1 1B2 1 3 2B2 5 1 2B3 1 3 3B3 5 1 3HZM15N B1 1 5 1HZM5.6N B1 5 6 1B2 1 5 2B2 5 6 2B3 1 5 3B3 5 6 3HZM16N B1 1 6 1HZM6.2N B1 6 2 1B2 1 6 2B2 6 2 2B3 1 6 3B3 6 2 3HZM18N B1 1 8 1HZM6.8N B1 6 8 1B2 1 8 2B2 6 8 2B3 1 8 3B3 6 8 3HZM-N Series Example of MarkingHZM-N SeriesFig.1 Zener current Vs. Zener voltageFig.2 Temperature Coefficient Vs. Zener voltageHZM-N SeriesFig.3 Power Dissipation Vs. Ambient TemperatureHZM-N Series Package Dimensions。

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1905638资料

PHOENIX CONTACT GmbH & Co. KG http://www.pho1, 2008
元器件交易网
ZFKDSA 1,5-5,08-12 Order No.: 1905984
http://eshop.phoenixcontact.de/phoenix/treeViewClick.do?UID=1905984
Drawings Drilling diagram
Dimensioned drawing
PHOENIX CONTACT GmbH & Co. KG http://www.phoenixcontact.de
Page 3 / 4 Mar 11, 2008
元器件交易网
ZFKDSA 1,5-5,08-12 Order No.: 1905984
2.5 kV 2.5 kV 250 V 250 V EN-VDE 3A 160 V 3A PA V0
Approval logo
CUL Nominal voltage UN Nominal current IN UL Nominal voltage UN Nominal current IN Certification Additional products Item General 1891205 FK-MPT 0,5/16-3,5 Printed circuit terminal block, nominal current: 4 A, rated voltage: 160 V, pitch: 3.5 mm, no. of positions: 16, mounting: Soldering, type of connection: Spring-cage connection, connection direction from the conductor to the PCB: 90° Designation Description 300 V 4A CUL, UL 300 V 4A

Lumel CA系列指标频率表说明书

1CA32, CA36, CA37, CA39PANEL POINTER FREQUENCY METERSAPPLICATIONCA36, CA37, CA39 and CA32 pointer frequency meters are moving-coil meters with built-in measuring transducers intended for measuring voltage frequency in AC electrical networks.These meters can be mounted on panels of any kind of materials.We deliver together the meters:- two screw holders to fix the meter on the panel,- a terminal shroud,- a service manual.BASIC REQUIREMENTS, USER`S SAFETYCA series meters are destined to be installed on panels or switchboards.They are in conformity with EN 61010-1 standard requirements.TECHNICALDATAMeasuring ranges Accuracy class45...55 Hz 0.5 45...65 Hz 0.5 48...52 Hz 0.5 55...65 Hz 0.5 360...440 Hz 0.5380...420 Hz0.5Input voltages 60, 100, 110, 230, 240, 400,415, 440, 500 V ±20%Rated operating conditions - ambient temperature 5...23...40o C - relative air humidity 25...85%Power consumption7VAProtection Grade acc. to EN60529- front protection grade: in standard IP 52on request IP 65 - CA36, CA37, CA39- terminal protection (with a terminal protection cover) - IP20Electromagnetic compatibility:- emission acc. EN 61000-6-4 standard - immunityacc. EN 61000-6-2 standard Safety requirements acc. EN 61010-1+A1 standard - installation category III - level of polution2Maximal working voltage in relation to the earth600 V ACHousing material thermoplastic, self-extinguishing plastic (UL 94V-O)Glass material glass (in standard)anti-reflective glass on requestWeight – CA32 490 g – CA37 210 g – CA39 280 g – CA36150 gACCESSORIESWe deliver with the meter:- holders fixing the meter to the plate - 2 pcs. (for CA36, CA37, CA39) or 4 pcs. (for CA32).- terminal protection cover ................................ 1 pcEXTERNAL DIMENSIONS OF METER FOR IP65 PROTECTION GRADEMETER SEALGLASSTable 2Table 1Included are two screw holders which should be fixed on arbitrary, oppositecase cornersType a k CA3654,845+0,6CA3779,668+0,7CA39103,692+0,82WORKING POSITIONCode Working position0 c3 A c1 B c2 = 15° C c2 = 30° D c2 = 45° E c2 = 60° F c2 = 75° H c4 = 105° I c4 = 120°Table 4EXTERNAL DIMENSIONS OF CA36, CA37, CA39, CA32Fig. 1. External dimensions of CA36, CA37, CA39, CA32 meters.Table 3545External dimensions od CA36, CA37, CA39, CA32 [mm] meters.Type a b c d ef g h i k*<6A6-25A >6A >6-25ACA3648343,544,55,55368647518,721,645+0,6CA377246467,55,553686469,53025,768+0,7CA399648891,55,553686469,53027,292+0,8CA321445,5136137,58,553686469,53037138+1* panel cut-out dimensions3Fig. 2. Fixing of meters CA36, CA37, CA39 in the panel(version with IP52) 1Fig. 3. Fixing of CA32 meters (version with IP52)21Included are two screw holders which should be fixed onarbitrary, opposite case corners WAy OF ThE METER FIXATION ON ThE PANEL.ORDERING PROCEDUREPANEL FREQUENCY METERS CA37, CA39, CA32 X X X XX XFrequency range: 45...55 Hz...........1 45...65 Hz...........2 48...52 Hz...........3 55...65 Hz...........4 360...440 Hz...........8 380...420 Hz...........9 Rated voltage: 60 V..................1 100 V..................2 110 V..................3 230 V..................4 400 V..................5 415 V..................6 440 V..................7 500 V (8)690 V (9)Working positionWrite in the code acc. table 2 ..........................X Version: Standard .............................................................00 Custom-made* ....................................................XX Acceptance tests:Without additional requirements ..................................8 With a certificate delivered bythe Technical Inspection Dept. .....................................7 Other requirements.......................................................X * The version number is settled by the manufacturer.Example of orderCode: CA37-1-4-O-00-8, means:The version of a frequency meter, CA37 type in a 72 x 72 mm case, for the frequency range: 45...55 Hz, rated voltage: 230 V, working position: c3 (90°- vertical), standard version, without additional requirements.CA-19_enExport department:tel.: (+48 68) 45 75 139, 45 75 233, 45 75 321, 45 75 386fax.: (+48 68) 32 54 091LUMEL S.A.ul. Sulechowska 1, 65-022 Zielona Góra, POLAND tel.: +48 68 45 75 100, fax +48 68 45 75 5082The meter is fixed to the panel by two screw holderssituated on opposite corners of the case.。

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HZM6.8MFASilicon Planar Zener Diode for Surge AbsorbADE-208-833(Z)Rev 0Dec. 1999 Features• HZM6.8MFA has four devices in a monolithic, and can absorb surge.• MPAK-5 Package is suitable for high density surface mounting and high speed assembly.Ordering InformationType ser Mark Package CodeHZM6.8MFA68M MPAK-5OutlineHZM6.8MFA2Absolute Maximum Ratings (Ta = 25°C)ItemSymbol Value Unit Power dissipation Pd *1200mW Junction temperature Tj 150°C Storage temperature Tstg-55 to +150°CNote1.Four device total, With P.C board.Electrical Characteristics (Ta = 25°C) *1ItemSymbol Min Typ Max Unit Test Condition Zener voltage V Z 6.47—7.00V I Z = 5 mA, 40ms pulse Reverse current I R ——2µA V R = 3.5VCapacitance C ——130pF V R = 0V, f = 1 MHz Dynamic resistance r d ——30ΩI Z = 5 mAESD-Capability *2—30——kVC =150pF, R = 330Ω, Both forward and reverse direction 10 pulseNotes 1.Per one device.2.Failure criterion ; IR > 2 µA at VR =3.5V.HZM6.8MFA Main Characteristic3HZM6.8MFA Package Dimensions4HZM6.8MFA5Cautions1.Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,copyright, trademark, or other intellectual property rights for information contained in this document.Hitachi bears no responsibility for problems that may arise with third party’s rights, including intellectual property rights, in connection with use of the information contained in this document.2.Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use.3.Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,contact Hitachi’s sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,traffic, safety equipment or medical equipment for life support.4.Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installationconditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product.5.This product is not designed to be radiation resistant.6.No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi.7.Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor products.Hitachi, Ltd.Semiconductor & Integrated Circuits.Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan.Hitachi Asia Pte. Ltd.16 Collyer Quay #20-00Hitachi TowerSingapore 049318Tel: 535-2100Fax: 535-1533URLNorthAmerica : http:/Europe : /hel/ecg Asia (Singapore): .sg/grp3/sicd/index.htm Asia (Taiwan): /E/Product/SICD_Frame.htm Asia (HongKong): /eng/bo/grp3/index.htm Japan : http://www.hitachi.co.jp/Sicd/index.htmHitachi Asia Ltd.Taipei Branch Office3F, Hung Kuo Building. No.167, Tun-Hwa North Road, Taipei (105)Tel: <886> (2) 2718-3666Fax: <886> (2) 2718-8180Hitachi Asia (Hong Kong) Ltd.Group III (Electronic Components)7/F., North Tower, World Finance Centre,Harbour City, Canton Road, Tsim Sha Tsui,Kowloon, Hong Kong Tel: <852> (2) 735 9218Fax: <852> (2) 730 0281 Telex: 40815 HITEC HXHitachi Europe Ltd.Electronic Components Group.Whitebrook ParkLower Cookham Road MaidenheadBerkshire SL6 8YA, United Kingdom Tel: <44> (1628) 585000Fax: <44> (1628) 778322Hitachi Europe GmbHElectronic components Group Dornacher Stra§e 3D-85622 Feldkirchen, Munich GermanyTel: <49> (89) 9 9180-0Fax: <49> (89) 9 29 30 00Hitachi Semiconductor (America) Inc.179 East Tasman Drive,San Jose,CA 95134 Tel: <1> (408) 433-1990Fax: <1>(408) 433-0223For further information write to:。