INSULATED GATE TYPE FIELD EFFECT TRANSISTOR

专利名称：INSULATED GATE TYPE FIELD EFFECT TRANSISTOR

发明人：INOE TAIICHI

申请号：JP10307381

申请日：19810701

公开号：JPS6118350B2

公开日：

19860512

专利内容由知识产权出版社提供

摘要：PURPOSE:To prevent short circuits between electrodes and to eliminate the break of electrode wires by flattening the surface, by embedding a heat oxide film in the area between a gate electrode, a source electrode, and a drain electrode which comprise polycrystal Si, respectively, and are formed on a semiconductor substrate. CONSTITUTION:A thick field oxide film 12 is provided at the peripheral part of the semiconductor substrate 1. A thin oxide film is deposited on the surface of the substrate 1 to form gate oxide film 14. Openings 13-15 corresponding to source and drain regions are provided on both sides of the film 14 so that its central part remains. Then a thick polycrystal Si film 16 is grown on the entire surface, and coated by an Si3N4 film 17 and an SiO2 film 18. They are left on only the gate region and openings 13 and 15, and the other area is removed. Thereafter, impurities are diffused in the substrate 1 on both sides of the openings 13 and 15, the source region 2 and the drain region 3, which are divided into two parts, are formed and heat treated, and an oxide film 23 is formed in the remaining Si film 16 so as to bury the parts. At the same time, the regions 2 and 3 which are divided by the heat treatment is incorporated to form a unitary body.

申请人：NIPPON ELECTRIC CO

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