NTE2920资料

Intrinsic turn–on time is neglegible (turn–on is dominated by LS+LD)
Note 1. Repetitive rating; pulse width limited by maximum junction temperature. Note 4. Pulse width ≤ 300µs; duty cycle ≤ 2%. Note 5. Current limited by the package, (Die Current = 90A).
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Electrical Characteristics: (TJ = +25°C unless otherwise specified)
Parameter Drain–to–Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain–to–Source On–Resistance Gate Threshold Voltage Forward Transconductance Drain–to–Source Leakage Current Symbol V(BR)DSS Test Conditions VGS = 0V, ID = 250µA Min 60 – – 2.0 25 – – – – – – – VDD = 30V, ID = 64A, RG = 6.2Ω, RD = 0.45Ω, Note 4 Ω – – – – Between lead, .250in. (6.0) mm from package and center of die contact VGS = 0V, VDS = 25V, f = 1MHz – – – – – Typ – 0.056 – – – – – – – – – – 20 160 83 150 5.0 13 4500 2000 300 Max – – 0.014 4.0 – 25 250 100 –100 160 48 54 – – – – – – – – – Unit V V/°C Ω V mhos µA µA nA nA nC nC nC ns ns ns ns nH nH pF pF pF
G
D
S
TO247
Note: Drain connected to metal part of mounting surface.
Gate–to–Source Forward Leakage Gate–to–Source Reverse Leakage Total Gate Charge Gate–to–Source Charge Gate–to–Drain (“Miller”) Charge Turn–On Delay Time Rise Time Turn–Off Delay Time Fall Time Internal Drain Inductance Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capaticance
∆V(BR)DSS Reference to +25°C, ID = 1mA ∆TJ RDS(on) VGS(th) gfs IDSS IGSS IGSS Qg Qgs Qgd td(on) tr td(off) tf LD LS Ciss Coss Crss VGS = 10V, ID = 54A, Note 4 VDS = VGS, ID = 250µA VDS = 25V, ID = 54A, Note4 VDS = 60V, VGS = 0V VDS = 48V, VGS = 0V, TJ = +150°C VGS = 20V VGS = –20V ID = 64A, VDS = 48V, VGS = 10V, Note 4
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NTE2920 MOSFET N–Ch, Enhancement Mode High Speed Switch
Features: D Dynamic dv/dt Rating D Isolated Central Mounting Hole D Fast Switching D +175°C Operating Temperature D Ease of Paralleling D Simple Drive Requirements Absolute Maximum Ratings: Continuous Drain Current (VGS = 10V), ID TC = +25°C (Note 5) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 70A TC = +100°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 64A Pulsed Drain Current (Note 1), IDM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 360A Power Dissipation (TC = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 230W Derate Linearly Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.5W/°C Gate–to–Source Voltage, VGS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±20 Single Pulse Avalanche Energy (Note 2), EAS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 640mJ Peak Diode Recovery dv/dt (Note 3), dv/dt . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.5V/ns Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +175°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +175°C Lead Temperature (During Soldering, 1.6mm from case for 10sec), TL . . . . . . . . . . . . . . . . . +300°C Mounting Torque (6–32 or M3 Screw) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 lbfin (1.1Nm) Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.65°C/W Thermal Resistance, Junction–to–Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40°C/W Typical Thermal Resistance, Case–to–Sink (Flat, Greased Surface), RthCS . . . . . . . . . . . 0.24°C/W Note Note Note Note Note 1. 2. 3. 4. 5. Repetitive rating; pulse width limited by maximum junction temperature. VDD = 25V, starting TJ = +25°C, L = 92µH, RG = 25Ω, IAS = 90A ISD ≤ 90A, di/dt ≤ 200A/µs, VDD ≤ 60V, TJ ≤ +175°C Pules Width ≤ 300µs, Duty Cycle ≤ 2%. Current limited by the package, (Die Current = 90A).
Source–Drain Ratings and Characteristics:
Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn–On Time Symbol IS ISM VSD trr Qrr ton Note 5 Note 1 TJ = +25°C, IS = 90A, VGS = 0V, Note 4 TJ = +25°C, IF = 64A, di/dt = 100A/µs, Note 4 Test Conditions Min – – – – – Typ – – – 270 1.1 Max 70 360 2.5 540 2.2 Unit A A V ns µx .217 (5.5)
.197 (5.0)
See Note .787 (20.0)
.143 (3.65) Dia Max
.157 (4.0)
.559 (14.2) Min
.215 (5.45)
.047 (1.2)
.094 (2.4)