5SGA 30J2501中文资料

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全控型电力半导体器件

问题的提出¾为什么要开发全控型器件？¾半控型器件有哪些限制？在很多情况下，如何将器件关断是一个突出的问题。

¾对关断要求不高，或有其他很有效的方法关断器件时，半控型器件是合适的。

¾反之，就需要全控型器件。

¾5.1 门极可关断晶闸管（GTO）¾5.2 电力晶体管（GTR、PRT）¾5.3 电力场效应晶体管（P-MOSFET）¾5.4 绝缘栅双极晶体管（IGBT）¾5.5 其他全控型电力电子器件¾5.6 模块和智能功率模块（IPM）¾5.7 电力电子技术发展概貌¾5.8 电力半导体器件和装置的保护门极可关断晶闸管（Gate-Turn-Off Thyristor-GTO）¾晶闸管的一种派生器件。

¾可以通过在门极施加负的脉冲电流使其关断。

¾电压、电流容量较大，与普通晶闸管接近，在兆瓦级以上的大功率场合有较多应用ABB 5SGA 30J2501可看成多个小的这些小的SCR结单元一个单元极是被门极包围的条状阴极的宽度越窄，通态电流越容易被关断¾阴极面积太大结论¾GTO导通过程与普通晶闸管一样，只是导通时饱和程度较浅。

9SCR深度饱和(1.15)，GTO临界饱和(稍大于1)¾GTO关断过程中有强烈正反馈使器件退出饱和而关断。

¾多元集成结构使得GTO比普通晶闸管开通过程快，承受di/dt能力强。

5.2 GTO的特性和参数大部分参数和SCR一样或类似，除了：¾门极关断电流I：指GTO从通态转为断GM态所需的门极反向瞬时峰值电流的最小值。

注意：¾GTO管压降要大些，直流通态损耗也大些。

¾GTO的关断是由门极负脉冲完成的，所以门极功耗要大些。

GTO的基本缓冲电路1）GTO 开通和关断时的波形开通时间t on =t d +t r¾t d ——触发延迟时间为门极触发电流从0.1I FGM 上升开始，至GTO 开始导通、阳极电压下降至0.9U d 的时间间隔。

钢芯铝绞线技术规范书

钢芯铝绞线技术规范书目录1 概述1.1 工作范围1.2 工艺质量1.3 标准1.4 计量单位1.5 投标时应提交的资料1.6 文件和图纸1.7 检查1.8 交货1.9 质保期2 导线2.1 概述2.2 钢芯铝绞线技术条件2.3 设计及制造2.4 试验和检验2.5 包装及标志2.6 运输2.7 供货数量1 概述1.1 工作范围本技术条件包括用于××线路钢芯铝绞线的设计、制造、试验、检验、包装和供货。

1.2 工艺质量本技术条件和图纸所包含的材料的工艺和精加工应符合国内最先进的制造和装配实践。

提供的产品应是全新的, 其设计和制造均应按照招标方批准的文件进行。

不能因图纸和本技术条件书的遗漏、疏忽和不明确而免除卖方提供第一流产品、工作质量及服务的责任。

倘若发现任何疏漏和不正确之处, 卖方必须通知买方, 在差异问题未纠正之前仍进行的任何工作应由卖方负责。

1.3 标准除技术条件书和图纸中所提出的要求以外, 卖方应遵循相关国家标准和行业标准的最新版本。

1.4 计量单位在设计资料、技术条件和图纸等文件中, 应使用SI 公制系统, 且温度用摄氏温度。

1.5 投标时应提交的资料为了能合理评标, 每个投标者应在投标书中提交以下的资料和数据:(l) 厂商名称和制造厂商推荐供货的原产地。

(2) 必要的图纸, 产品型录, 散页材料, 材料技术条件及其识别和描述性文字, 以明确表明该产品能满足标书的所有要求。

(3) 同类或类似产品在同电压等级的工程中, 不少于三年的成功供货的记录, 包括用户及工程项目、供货量、供货时间等。

(4) 同类或类似产品的型式试验的鉴定报告, 以证明所提供的产品能完全满足标书的要求。

(5) 对于所推荐的任何替代货物, 除完整的技术规范书和必要的说明文献外, 要提交与本技术条件书出现差异的报告。

1.6 文件和图纸(1) 生产进度表卖方应在合同签订后不超过一个月的时间内, 尽快向买方提交一份生产进度表, 以详细说明工作开展的程序。

GBJ2501资料

J H I
D
3.0 X 45°
G
E
E
All Dimensions in mm
Maximum Ratings and Electrical Characteristics @ TA = 25°C unless otherwise specified
Single phase, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. Characteristic Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage RMS Reverse Voltage Average Forward Rectified Output Current (Note 1) @ TC = 100°C Non-Repetitive Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC Method) Forward Voltage (per element) @ IF = 12.5A Peak Reverse Current at Rated DC Blocking Voltage I2t Rating for Fusing (t < 8.3ms) (Note 1) Typical Junction Capacitance (per element) (Note 2) Typical Thermal Resistance Junction to Case (Note 3) Operating and Storage Temperature Range Notes: @TC = 25°C @ TC = 125°C Symbol VRRM VRWM VR VR(RMS) IO IFSM VFM IR I2t Cj RqJC Tj, TSTG GBJ 25005 50 35 GBJ 2501 100 70 GBJ 2502 200 140 GBJ 2504 400 280 25 350 1.05 10 500 510 85 0.6 -65 to +150 GBJ 2506 600 420 GBJ 2508 800 560 GBJ 2510 1000 700 Unit V V A A V µA A2s pF °C/W °C

30CLJQ150资料

Limits Units
-55 to 150 -55 to 150 3.5 °C °C °C/W DC operation
Conditions
RthJC Max. Thermal Resistance, Junction
See Fig. 4
SMD-0.5
2

元器件交易网
元器件交易网
PD -93950B
SCHOTTKY RECTIFIER
HIGH EFFICIENCY SERIES
30CLJQ150
30 Amp, 150V
Major Ratings and Characteristics Characteristics IF(AV) VRRM (Per Leg) IFSM @ tp = 8.3ms half-sine (Per Leg) VF @ 15Apk, TJ =125°C (Per Leg) 30CLJQ150 Units 30 150 A V
Description/Features The 30CLJQ150 center tap Schottky rectifier has been expressly designed to meet the rigorous requirements of hirel environments. It is packaged in the hermetic surface mount SMD-0.5 ceramic package. The device's forward voltage drop and reverse leakage current are optimized for the lowest power loss and the highest circuit efficiency for typical high frequency switching power supplies and resonent power converters. Full MIL-PRF-19500 quality conformance testing is available on source control drawings to TX, TXV and S quality levels. • • • • • Hermetically Sealed Center Tap Low Forward Voltage Drop High Frequency Operation Guard Ring for Enhanced Ruggedness and Long term Reliability • Surface Mount • Lightweight

人民电器 RDB5GS-125系列可视窗隔离开关产品说明书

RDB5GS 系列隔离开关选型指南产品概述主要技术参数外形及安装尺寸RDB5GS-125系列可视窗隔离开关适用于交流50Hz 或60Hz ，额定工作电压为230V/400V 及以下的配电和控制回路中，主要作为终端电器的总开关，也可用于控制各类电动机、小功率电器和照明等，广泛应用于工矿企业、高层建筑、商业及家庭等场所。

产品符合：GB/T 14048.3 标准。

产品概述分断能力不超过10000A还具有家用或类似场所用线路的过载和短路保护，在正常情况下作为线路不频繁转换的配电线路中。

RDB5系列小型断路器主要用于交流50Hz额定工作电压至400V额定电流至125A额定短路,，，，正常工作条件和安装条件□ 使用环境温度：-3++□ 空气相对湿度：在周围空气温度为+40℃时不超过50%；在较低的温度下可以有较高的相对湿度；例如最湿月的平均最大相对湿度为95%，同时该月的平均最低温度为+20℃，对由于温度变化偶尔产生的凝露应采取处理措施；□ 海拔高度：不超过2000m；□ 污染等级：2级；□ 主电路安装类别：Ⅱ Ⅲ；周围空气温度为5℃～70℃，24h的平均值不超过35℃；□ 产品应储存在空气流通的库房内，温度下限不低于-5℃，上限不超过+40℃；相对湿度(+25℃)时不超过95%；□ 产品在运输和储存时应避免受到雨雪侵蚀、曝晒、潮湿、污染。

仓储时，距地面高度大于150mm，过程中应轻拿轻放，不应倒置，避免剧烈碰撞。

□ 断路器应安装在无爆炸危险和导电尘埃，无足以腐蚀金属和破坏绝缘的地方；□ 采用TH35-7.5安装轨安装；产品特征632147832145106785911主要技术参数脱扣特性脱扣曲线(1)产品型号和规格(2)断路器的极数(3)额定电流(4)脱扣曲线(5)订货数量例：订RDB5-63小型断路器额定电流为32A ，1P ，C 型，1000台，应写为：RDB5-63/1P ，C32，1000台。

US1中文资料

US1中文资料DISCRETE SEMICONDUCTORS DATA SHEETbook, halfpageM3D168US1 seriesSMA ultra fast low-losscontrolled avalanche rectifiersProduct speci?cation2000Feb14controlled avalanche recti?ersUS1 seriesFEATURESGlass passivatedHigh maximum operating temperatureIdeal for surface mount automotive applications ?Low leakage currentExcellent stabilityGuaranteed avalanche energy absorption capability ?UL94V-O classified plastic packageShipped in 12mm embossed tapeMarking: cathode, date code, type codeEasy pick and place.DESCRIPTIONDO-214AC surface mountable package with glass passivated chip.The well-defined void-free case is of a transfer-moulded thermo-setting plastic.The small rectangular package has two J bent leads.olumnsMSA474 Top view Side viewcathodebandk aFig.1 Simplified outline (DO-214AC) and symbol.LIMITING VALUESIn accordance with the Absolute Maximum Rating System (IEC134).SYMBOL PARAMETER CONDITIONS MIN.MAX.UNIT V RRM repetitive peak reverse voltageUS1A?50VUS1B?100VUS1D?200VUS1G?400VUS1J?600VV R continuous reverse voltageUS1A?50VUS1B?100VUS1D?200VUS1G?400VUS1J?600VV RMS root mean square voltageUS1A?35VUS1B?70VUS1D?140VUS1G?280VUS1J?420VI F(AV)average forward current averaged over any 20ms period;T tp=110°C; see Fig.21Acontrolled avalanche recti?ersUS1 seriesELECTRICAL CHARACTERISTICS T j =25°C unless otherwise speci?ed.THERMAL CHARACTERISTICS Notes1.Device mounted on Al 2O 3 printed-circuit board, 0.7mm thick; thickness of copper ≥35μm.2.Device mounted on epoxy-glass printed-circuit board, 1.5mm thick; thickness of copper ≥40μm. For moreinformation please refer to the ‘General Part of associated Handbook’.I FSMnon-repetitive peak forward currentt =8.3ms half sine wave;T j =25°C prior to surge;V R =V RRMmax ?25AT stg storage temperature ?65+175°C T jjunction temperatureSee Fig.365+175°CSYMBOL PARAMETER CONDITIONSTYP .MAX.UNITV Fforward voltage I F =1A;US1A to US1G see Fig.4? 1.1V US1J see Fig.51.4V I R reverse current V R =V RRMmax ; see Figs 6and 710μA V R =V RRMmax ; T j =165°C; see Figs 6and 7?50μA trr reverse recovery time when switched from I F =0.5A to I R =1A;measured at I R =0.25A; see Fig.12?50nsC ddiode capacitance V R =4V; f =1MHz;US1A to US1G see Fig.814?pF US1Jsee Fig.910pFSYMBOL PARAMETERCONDITIONSVALUE UNIT R th j-tp thermal resistance from junction to tie-point; see Fig.1027K/W R th j-a thermal resistance from junction to ambientnote 1100K/W note 2150K/WSYMBOL PARAMETERCONDITIONSMIN.MAX.UNITcontrolled avalanche recti?ersUS1 seriesGRAPHICAL DATAhandbook, halfpage 04020021.50.5180T tp (°C)I F(AV)(A)120160MCD822Fig.2Maximum permissible average forward current as a function of tie-pointtemperature (including losses due to reverse leakage).V R =V RRMmax ;δ=0.5; a =1.57.handbook, halfpage0100V R (%V Rmax )T j (°C)20010050MBK455Device mounted as shown in Fig.11.Solid line: Al 2O 3 printed-circuit board.Dotted line: epoxy printed-circuit board.Fig.3Maximum permissible junction temperature as a function of reverse voltage.handbook, halfpage32V F (V)I F(A)10MCD79210210110?110?210?3US1A to G T j =25°C.Fig.4Forward current as a function of forward voltage; typical values.handbook, halfpage42I F (A)V F (V)103MCD79310210110?110?210?3US1JT j =25°C.Fig.5Forward current as a function of forward voltage; typical values.controlled avalanche recti?ersUS1 serieshandbook, halfpage10002040V R (%V Rmax )I R (μA)608010210110?110?210?3MCD807T j = 165 °CT j = 25 °CFig.6Reverse current as a function of reverse voltage; typical values.US1A to Gf =1MHz; T j =25°C.handbook, halfpage10002040V R (%V Rmax )I R (μA)608010210110?110?210?3MCD806T j = 165 °CT j = 25 °CFig.7Reverse current as a function of reverse voltage; typical values.US1Jf =1MHz; T j =25°C.handbook, halfpage102101MCD79810?210?11V R (V)C d (pF)10102Fig.8Diode capacitance as a function of reverse voltage; typical values.US1 A to Gf =1MHz; T j =25°C.handbook, halfpage102101MCD79710?210?11V R (V)C d (pF)10102US1Jf =1MHz; T j =25°C.Fig.9Diode capacitance as a function of reverse voltage; typical values.controlled avalanche recti?ersUS1 serieshandbook, halfpage102101MBL120110Z th j-tp (K/W)102103t p (ms)104Fig.10Transient thermal impedance as a functionof pulse width.MSB2134.52.51.255050Fig.11 Printed-circuit board for surface mounting.Dimensions in mm.Material: Al 2O 3 or epoxy-glass.handbook, full pagewidth10 ?1 ?50 ?25 VDUT MAM057+t rr0.500.51.0I F (A)I R (A)t0.25Fig.12 Test circuit and reverse recovery time waveform and definition.Input impedance oscilloscope: 1M ?, 22pF; t r ≤7ns.Source impedance: 50?; t r ≤15ns.controlled avalanche recti?ersUS1 seriesPACKAGE OUTLINEREFERENCESOUTLINE VERSION EUROPEAN PROJECTIONISSUE DATE IECJEDEC EIAJSOD12499-10-22DO-214AC0 2.5 5 mmscaleTransfer-moulded thermo-setting plastic small rectangular surface mounted package;2 connectorsSOD124UNIT b A 1c D E Q mm1.61.40.20.052.82.44.54.3H 5.55.13.32.7DIMENSIONS (mm are the original dimensions)A 2.32.0DH AE b(1)A 1QcNote1. The marking band indicates the cathode.controlled avalanche recti?ersUS1 seriesDEFINITIONS LIFE SUPPORT APPLICATIONSThese products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.Data sheet status Objective speci?cation This data sheet contains target or goal speci?cations for product development.Preliminary speci?cation This data sheet contains preliminary data; supplementary data may be published later.Product speci?cation This data sheet contains ?nal product speci?cations.Limiting valuesLimiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134).Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the speci?cation is not implied. Exposure to limiting values for extended periods may affect device reliability.Application informationWhere application information is given, it is advisory and does not form part of the speci?cation.US1 series controlled avalanche recti?ersNOTESUS1 series controlled avalanche recti?ersNOTESUS1 series controlled avalanche recti?ersNOTESPhilips Electronics N.V.SCA All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.The information presented in this document does not form part of any quotation or contract,is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.Internet:/doc/2ec84a2e0722192e4536f6ec.html 200069Philips Semiconductors – a worldwide companyFor all other countries apply to: Philips Semiconductors,International Marketing &Sales Communications, Building BE-p, P.O.Box 218,5600MD EINDHOVEN, The Netherlands,Fax.+31402724825Argentina: see South America Australia: 3 Figtree Drive, HOMEBUSH, NSW 2140,Tel.+61297048141,Fax.+61297048139Austria:Computerstr. 6, A-1101 WIEN, P.O. Box 213,Tel.+431601011248, Fax.+431601011210Belarus: Hotel Minsk Business Center, Bld.3, r.1211, Volodarski Str.6,220050MINSK, Tel.+375172200733,Fax.+375172200773Belgium: see TheNetherlands Brazil:see South AmericaBulgaria:Philips Bulgaria Ltd., Energoproject, 15th floor,51James Bourchier Blvd., 1407SOFIA,T el.+3592689211,Fax.+3592689102Canada: PHILIPS SEMICONDUCTORS/COMPONENTS,T el.+18002347381,Fax.+18009430087China/Hong Kong: 501Hong Kong Industrial Technology Centre,72Tat Chee Avenue, Kowloon Tong, HONG KONG,Tel.+852********,Fax.+852********Colombia: see South America Czech Republic: see AustriaDenmark: Sydhavnsgade 23, 1780COPENHAGEN V,Tel.+4533293333,Fax.+4533293905Finland: Sinikalliontie 3, FIN-02630ESPOO,T el.+3589615800,Fax.+358961580920 France: 51Rue Carnot, BP317, 92156SURESNES Cedex,Tel.+33140996161,Fax.+33140996427Germany: Hammerbrookstra?e 69, D-20097HAMBURG,T el.+4940235360,Fax.+494023536300Hungary: see AustriaIndia: Philips INDIA Ltd, Band Box Building, 2nd floor,254-D,Dr.Annie Besant Road, Worli, MUMBAI 400025,Tel.+91224938541,Fax.+91224930966Indonesia:PT Philips Development Corporation,Semiconductors Division,Gedung Philips, Jl. Buncit Raya Kav.99-100, JAKARTA 12510,Tel.+62217940040ext.2501, Fax.+62217940080Ireland: Newstead, Clonskeagh, DUBLIN 14,Tel.+35317640000,Fax.+35317640200Israel: RAPAC Electronics, 7Kehilat Saloniki St, PO Box 18053,TEL AVIV 61180, Tel.+97236450444,Fax.+97236491007Italy:PHILIPS SEMICONDUCTORS,Via Casati,23-20052MONZA (MI),Tel. +390392036838,Fax +390392036800 Japan: Philips Bldg 13-37, Kohnan 2-chome, Minato-ku,TOKYO 108-8507, Tel.+81337405130,Fax.+81337405057Korea: Philips House, 260-199Itaewon-dong, Yongsan-ku, SEOUL,Tel.+8227091412,Fax.+8227091415Malaysia: No.76Jalan Universiti, 46200PETALING JAYA, SELANGOR,Tel.+60 37505214,Fax.+6037574880Mexico: 5900Gateway East, Suite 200, EL PASO, TEXAS 79905,Tel.+9-58002347381, Fax +9-58009430087Middle East: see ItalyNetherlands: Postbus 90050, 5600PB EINDHOVEN, Bldg.VB,Tel.+31402782785,Fax.+31402788399New Zealand: 2Wagener Place, C.P.O.Box 1041, AUCKLAND,Tel.+6498494160,Fax.+6498497811Norway: Box 1, Manglerud 0612, OSLO,Tel.+4722748000,Fax.+4722748341Pakistan: see Singapore Philippines: Philips Semiconductors Philippines Inc.,106Valero St.Salcedo Village, P.O.Box 2108MCC,MAKATI,Metro MANILA, Tel.+6328166380,Fax.+6328173474Poland : Al.Jerozolimskie 195B,02-222WARSAW,Tel.+48225710000,Fax.+48225710001Portugal: see Spain Romania: see ItalyRussia: Philips Russia, /doc/2ec84a2e0722192e4536f6ec.html atcheva 35A, 119048MOSCOW,Tel.+70957556918,Fax.+70957556919 Singapore: Lorong 1, Toa Payoh, SINGAPORE 319762,Tel.+653502538,Fax.+652516500Slovakia: see AustriaSlovenia: see ItalySouth Africa: S.A. PHILIPS Pty Ltd., 195-215Main Road Martindale,2092JOHANNESBURG, P.O.Box 58088 Newville 2114,Tel.+27114715401,Fax.+27114715398South America: Al.Vicente Pinzon,173, 6th floor,04547-130S?O PAULO,SP, Brazil,Tel.+55118212333,Fax.+55118212382Spain: Balmes 22, 08007BARCELONA,Tel.+34933016312,Fax.+34933014107 Sweden: Kottbygatan 7, Akalla, S-16485STOCKHOLM,Tel.+46859852000,Fax.+46859852745 Switzerland: Allmendstrasse 140, CH-8027ZüRICH,Tel.+4114882741Fax.+4114883263Taiwan: Philips Semiconductors, 6F, No.96, Chien Kuo N.Rd.,Sec.1,TAIPEI, Taiwan Tel.+886221342886,Fax.+886221342874Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd.,209/2Sanpavuth-Bangna Road Prakanong, BANGKOK 10260,Tel.+6627454090,Fax.+6623980793Turkey: Yukari Dudullu, Org. San. Blg., 2.Cad. Nr. 28 81260Umraniye,ISTANBUL,Tel.+902165221500,Fax.+902165221813Ukraine : PHILIPS UKRAINE, 4Patrice Lumumba str., Building B, Floor 7,252042KIEV, Tel.+380442642776, Fax. +380442680461 United Kingdom: Philips Semiconductors Ltd., 276Bath Road, Hayes,MIDDLESEX UB35BX, Tel.+442087305000,Fax.+442087548421United States: 811East Arques Avenue, SUNNYVALE, CA 94088-3409,Tel.+18002347381, Fax.+18009430087Uruguay: see South AmericaVietnam: see SingaporeYugoslavia: PHILIPS, Trg N. Pasica 5/v,11000BEOGRAD,Tel.+381113341299,Fax.+381113342553 Printed in The Netherlands603502/250/01/pp 12 Date of release:2000Feb 14Document order number: 939775006784。

SG-250KVA

45,0前言：一、变压器的用途和分类变压器是一种能够改变交流电压的设备。

除了用于变换电压之外，变压器还用于变换交流电流、变换阻抗以及改变相位等。

变压器的种类很多，分类方法也很多。

（一）按容量可以把变压器分为（二）按用途可以把变压器分为1.电力变压器。

包括：（1）升压变压器。

（2）降压变压器。

按照容量分类电压（kV ）容量（kVA ）中小型小型≤355～500中型630～6300大型≤1108000～63000特大型≥220≥3150上海民恩电气有限公司荣誉出品（3）配电变压器。

用于配电网络，以满足生产和日常生活的要求。

低压侧电压为400V（单相为230V）的变压器称为配电变压器，一般高压侧的电压为6～10kV。

如果变压器高压侧电压为35kV（或66～110kV）的，则称为直配配电变压器，简称直配变。

（4）联络变压器。

用于联络两变电所系统。

（5）厂用或所用变压器。

发电厂或变电所自用或为厂矿企业专用。

2.仪用变压器。

诸如电流互感器、电压互感器，作为测量和保护装置。

3.电炉变压器。

有炼钢炉变压器、电压炉变压器、感应炉变压器。

4.试验变压器。

5.整流变压器。

6.调压变压器。

7.矿用变压器（防爆变压器）。

8.其他变压器。

（三）按相数可以把变压器分为1.单相变压器。

用于单相负载或三相变压器组。

2.三相变压器。

用于三相负载。

SG-250KVA隔离变压器请您放心选购技术参数：1）隔离变压器型号：SG-250KVA隔离变压器请您放心选购2）变压器容量：250KVA3）变压器品牌：上海民恩4）变压比：380V/220V(此参数根据客户的实际需要选择）5）输入电压：380V6）输入额定电流：380A7）输出电压：2２0VAC±1%8）输出额定电流:656.1A9）电压调整率：+1.5%10）连接组别：D/yn1111）运行环境温度：－30～+40℃12）频率：50Hz13）耐压：3kVAC/50Hz/60s（进、出线端子对外壳地），无击穿和放电现象14）噪声：＜65dB（1m处）15）冷却方式：AN16）绝缘等级：F/H级绝缘17）防护等级：IP2118）外形尺寸：请参考咨询19）包装：木箱包装20）变压器性能：高性能21）材质：铜芯、铝芯（客户自主选择）22）设计加工周期：3-5个工作日23）售后服务：国家三包1年，免费提供技术咨询，技术指导,安装指导SG-250KVA隔离变压器请您放心选购产品概述SG系列三相干式变压器广泛适用于交流50或60Hz，电压至660V户内式的电器电源设备之用。

普通GTO说明书

ABB Semiconductors AG reserves the right to change specifications without notice.V DRM =2500V I TGQM =3000A I TSM =30kA V T0= 1.50V r T=0.33m ΩV DClin =1400VGate turn-off Thyristor5SGA 30J2501Doc. No. 5SYA 1213-02 Aug. 2000• Patented free-floating silicon technology • Low on-state and switching losses • Annular gate electrode • Industry standard housing • Cosmic radiation withstand ratingMechanical data (see Fig. 4)min.36kN F m Mounting force max.44kNAAcceleration:Device unclamped Device clamped50200m/s 2m/s 2M Weight1.3kg D S Surface creepage distance ≥33mm D aAir strike distance≥15mmGTO DataOn-stateI TAVM Max. average on-state current1300A Half sine wave, T C = 85 °CI TRMS Max. RMS on-state current2040AMax. peak non-repetitiveI TSM30kA t P=10ms T j =125°Csurge current51kA t=1ms After surge:PI2t Limiting load integral 4.50⋅106A2s t P=10ms V D = V R = 0V1.30⋅106A2s t P=1msV T On-state voltage 2.50V I T=3000AV T0Threshold voltage 1.50V I T=400 - 4000A T j =125 °C r T Slope resistance0.33mΩI H Holding current100A T j=25 °CGateV GT Gate trigger voltage 1.2V V D=24 V T j =25 °CI GT Gate trigger current 4.0A R A=0.1 ΩV GRM Repetitive peak reverse voltage17VI GRM Repetitive peak reverse current50mA V GR=V GRMThermalT j Storage and operating -40...125°Cjunction temperature range R thJCThermal resistance 22K/kW Anode side cooled junction to case27K/kW Cathode side cooled 12K/kW Double side cooled R thCHThermal resistance case to 3K/kW Single side cooled heat sink3K/kWDouble side cooledi 1234R I (K/kW) 5.4 4.5 1.70.4Analytical function for transient thermal impedance:)e -(1R= (t)Z 41i /t -thJC i ∑=i ττi (s)1.20.170.010.001Fig. 1Transient thermal impedance, junction to case.Fig. 2On-state characteristicsFig. 3 General current and voltage waveforms with GTO-specific symbolsFig. 4Outline drawing. All dimensions are inmillimeters and represent nominal valuesunless stated otherwise.ABB Semiconductors AG reserves the right to change specifications without notice.ABB Semiconductors AG Doc. No. 5SYA 1213-02 Aug. 2000Fabrikstrasse 2CH-5600 Lenzburg, Switzerland Tel:+41 (0)62 888 6419Reverse avalanche capabilityIn operation with an antiparallel freewheeling diode, the GTO reverse voltage V R may exceed the rate value V RRM due to stray inductance and diode turn-on voltage spike at high di/dt. The GTO is then driven into reverse avalanche. This condition is not dangerous for the GTO provided avalanche time and current are below 10 µs and 1000 A respectively. However, gate voltage must remain negative during this time. Recommendation : V GR = 10… 15 V.。

SG系列干式变压器

SG-4kVA ~20kVA防护式外形图
5 外形及安装尺寸
5.1 SG系列开启式干式变压器外形尺寸(见表、图1)。 5.2 SG系列防护式干式变压器外形尺寸(见表、图2、图3、图4、图5)。
图1 开启式
max
SG-30kVA ~60kVA防护式外形图
max
max
D-031
上海国本电子有限公司
上海国本电子有限公司
上海国本电子有限公司
电源电器类
1 适用范围
SG系列三相干式变压器、为户内空气自冷式，适用于交流50Hz/60Hz、电压1000V及1000V以下的电路中，作为各类机床、机械设备等一般电器的控制电源、局部照明及指示电源，也可作为小型动力电源用。符合标准：Q/ZT525。
SG系列三相干式变压器
2 型号及含义
Φ6×12
SG-0.75 0.75
注：1、所列尺寸供参考；SG-100kVA及以下输出电流大于300A的产品为特殊定做产品，产品尺寸会相应改变； 2、表中所列的额定输入，输出电压，根据需要可以选择任意一种； 3、表中所列以外的电压和尺寸，可根据用户要求协商确定后特殊定做。 4、SG-80kVA及以上规格防护式产品壳体下方带轮子，壳体内部配风冷系统，门板上带电流电压表如图5所示。 SG-4kVA ~60kVA规格防护式产品仅带外壳，门上带一电源指示灯，如图3、图4所示。 SG-0.3kVA ~3kVA防护式产品接线端头在壳体外部，壳体上只带一个电源指示灯，如图2所示。
SG-300kVA
3.4 环境空气中，无严重影响变压器绝缘的污秽及易爆介质，不含有腐蚀金属和破坏绝缘的有害气体或尘埃，使用中不得使变压器受到水、雨、雪的侵蚀。 3.5 安装场所无严重的振动和颠簸。 3.6 电源电压波形三相干式变压器可制成开启式或防护式，具有损耗低、噪声小、防火性能好和不污染环境等优点。其中防护式是采用钢板加工成箱壳，变压器在箱壳内部，箱壳外有进出线孔，以便安装电源线路。另外，防护式可按用户要求增加电压电流监控仪表，80kVA及以上大容量的还可增加轴流散热风机，也可增加转向轮以便移动。

LRB520S-30T1G 30V 200mA 贴片肖特基二极管 ZXH520S-30T1G

SCHOTTKY BARRIER DIODELRB520S -30T1GMAXIMUM RATINGS (T A = 25°C)ParameterSymbol Limits Unit DC reverse voltage V R 30V Mean rectifying currentI O 200mA Peak forward surge current I FSM 1A Junction temperature T j 125°C Storage temperatureT stg-40~+125°CELECTRICAL CHARACTERISTICS(T A = 25°C )Parameter Symbol Min.Typ Max.Unit Conditions Forward voltage V F --0.60V I F =200mA Reverse currentI R-- 1.0µAV R =10Vz ApplicationsLow current rectification and high speed switching z FeaturesExtremelysmall surface mounting type. (SC-79/SOD523)Low Reverse Current Extremely Fast Switching Speedz ConstructionSilicon epitaxial planarSOD523/SC-7912DEVICE MARKING AND ORDERING INFORMATIONDeviceMarkingShipping LRB520S-30T1G 5J 3000/Tape&Reel LRB520S-30T3G5J10000/Tape&ReelLESHAN RADIO COMPANY, LTD.We declare that the material of product compliance with RoHS requirements.Extremely Low Forward V oltage 0.6 V (max) @ IF = 200mA z Ｓｘｉｎｅｎ品牌：　ＺＸＨ５２０Ｓ－３０Ｔ１Ｇ　兼容Electrical characteristic curves (T a=25O C)Fig. 1 Forward characteristicsFig. 2 Reverse characteristics102030110100REVERSE VOLTAGE : V R (V)C A P A C I T A N C E B E T W E E N T E R M I N A L S:C T (p F )Fig. 3 Capacitance between terminals characteristicsf= 1MHz020406080100255075100125I o C U R R E N T (%)AMBIENT TEMPERATURE : Ta (oC)Fig 4. Derating curve(mounting on glass epoxy PCBs)LRB520S -30T1GLESHAN RADIO COMPANY, LTD.110100102030C A P A C I T A N C E B E T W E E N T E R M I N A L S :C t (p F )REVERSE VOLTAGE:VR(V)VR-Ct CHARACTERISTICSC A P A C I T A N C E B E T W E E NT E R M I N A L S :C t (p F )Ct DISPERSION MAP5101520253035404550101001000100000.0010.11010000.10.20.30.10.20.30.40.5IFSM DISRESION MAPP E A K S U R G E F O R W A R D C U R R E N T :I F S M (A )P E A K S U R G E F O R W A R D C U R R E N T :I F S M (A )NUMBER OF CYCLESIFSM-CYCLE CHARACTERISTICSP E A K S U R G E F O R W A R D C U R R E N T :I F S M (A )TIME:t(ms)IFSM-t CHARACTERISTICS5101520253005101101000510110100TIME:t(s)Rth-t CHARACTERISTICST R A N S I E N T T H A E R M A L I M P E D A N C E :R t h (℃/W )F O R W A R D P O W E R D I S S I P A T I O N :P f (W )AVERAGE RECTIFIED FORWARD CURRENT：Io(A)Io-Pf CHARACTERISTICSD I S S I P A T I O N :P R (W )REVERSE VOLTAGE:VR(V)VR-P R CHARACTERISTICS00.0020.0040.0060.0080.0105101520253025℃75℃100℃125℃25℃75℃100℃125℃-25℃F O R W A R D C U R R E N T : I F (A )-25℃R E V E R S E C U R R E N T : I R (m A )FORWARD VOLTAGE:V F (mV)REVERSE VOLTAGE:V R (V)0.000010.00010.0010.010.11010203040500.0010.010.11100200300400500600Ｓｘｉｎｅｎ品牌：　ＺＸＨ５２０Ｓ－３０Ｔ１Ｇ　兼容SC -79/SOD -523LRB520S-30T1GLESHAN RADIO COMPANY, LTD.NOTES:1.DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.2.CONTROLLING DIMENSION: MILLIMETERS.3.MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH.MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL.4.DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PRO-TRUSIONS, OR GATE BURRS.DIM MIN NOM MAX MILLIMETERS D 1.10 1.20 1.30E 0.700.800.90A 0.500.600.70b 0.250.300.35c 0.070.140.20L 0.30 REF H 1.50 1.60 1.70E L20.150.200.25SIDE VIEWSOLDERING FOOTPRINT*RECOMMENDED2XＳｘｉｎｅｎ品牌：　ＺＸＨ５２０Ｓ－３０Ｔ１Ｇ　兼容。

SG3525ADWG中文资料

SG3525APulse Width Modulator Control CircuitThe SG3525A pulse width modulator control circuit offers improved performance and lower external parts count when implemented for controlling all types of switching power supplies. The on−chip +5.1 V reference is trimmed to "1% and the erroramplifier has an input common−mode voltage range that includes the reference voltage, thus eliminating the need for external divider resistors. A sync input to the oscillator enables multiple units to be slaved or a single unit to be synchronized to an external system clock.A wide range of deadtime can be programmed by a single resistor connected between the C T and Discharge pins. This device also features built−in soft−start circuitry, requiring only an external timing capacitor. A shutdown pin controls both the soft−start circuitry and the output stages, providing instantaneous turn off through the PWM latch with pulsed shutdown, as well as soft−start recycle with longer shutdown commands. The under voltage lockout inhibits the outputs and the changing of the soft−start capacitor when V CC is below nominal. The output stages are totem−pole design capable of sinking and sourcing in excess of 200 mA. The output stage of the SG3525A features NOR logic resulting in a low output for an off−state. Features•8.0 V to 35 V Operation•5.1 V "1.0% Trimmed Reference•100 Hz to 400 kHz Oscillator Range•Separate Oscillator Sync Pin•Adjustable Deadtime Control•Input Undervoltage Lockout•Latching PWM to Prevent Multiple Pulses•Pulse−by−Pulse Shutdown•Dual Source/Sink Outputs: "400 mA Peak•Pb−Free Packages are Available**For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet.ORDERING INFORMATIONFigure 1. Representative Block DiagramV ref V CC Ground OSC OutputSync RT CT Discharge CompensationINV. Input Noninv. Input C Soft−StartShutdownORDERING INFORMATION†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.MAXIMUM RATINGSvalues (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied,damage may occur and reliability may be affected.1.Derate at 10 mW/°C for ambient temperatures above +50°C.2.Derate at 16 mW/°C for case temperatures above +25°C.RECOMMENDED OPERATING CONDITIONSAPPLICATION INFORMATIONShutdown Options (See Block Diagram, page 2)Since both the compensation and soft−start terminals (Pins 9 and 8) have current source pull−ups, either can readily accept a pull−down signal which only has to sink a maximum of 100 m A to turn off the outputs. This is subject to the added requirement of discharging whatever external capacitance may be attached to these pins.An alternate approach is the use of the shutdown circuitry of Pin 10 which has been improved to enhance the available shutdown options. Activating this circuit by applying a positive signal on Pin 10 performs two functions: the PWMlatch is immediately set providing the fastest turn−off signal to the outputs; and a 150 m A current sink begins to discharge the external soft−start capacitor. If the shutdown command is short, the PWM signal is terminated without significant discharge of the soft−start capacitor, thus, allowing, for example, a convenient implementation of pulse−by−pulse current limiting. Holding Pin 10 high for a longer duration,however, will ultimately discharge this external capacitor,recycling slow turn−on upon release.Pin 10 should not be left floating as noise pickup could conceivably interrupt normal operation.ELECTRICAL CHARACTERISTICS (V = +20 Vdc, T = T to T[Note 3], unless otherwise noted.)low high4.Since long term stability cannot be measured on each device before shipment, this specification is an engineering estimate of averagestability from lot to lot.5.Tested at f osc = 40 kHz (R T = 3.6 k W, C T = 0.01 m F, R D = 0 W).ELECTRICAL CHARACTERISTICS (continued)Figure 2. Lab Test FixtureR T Ω, T I M I N G R E S I S T O R (k )Figure 4. Oscillator Discharge Time versus R DFigure 6. Output SaturationCharacteristicsDISCHARGE TIME (m s), D E A D T I M E R E S I S T O R ( )D ΩR , V O L T A GE G A I N (d B )V O L A V R C 2504Figure 7. Oscillator Schematic 0.010.020.030.050.070.10.20.30.50.7 1.0I O, OUTPUT SOURCE OR SINK CURRENT (A), S A T U R A T I O N V O L T A G E (V )s a t V Figure 8. Error Amplifier Schematic5020105.02.00806040200 4.03.53.02.52.01.51.00.50Figure 9. Output Circuit (1/2 Circuit Shown)Figure 10. Single−Ended Supply Figure 11. Push−Pull ConfigurationFigure 12. Driving Power FETSLow power transformers can be driven directly by the SG3525A.Automatic reset occurs during deadtime, when both ends of the primary winding are switched to ground.+V For single−ended supplies, the driver outputs are grounded.The V C terminal is switched to ground by the totem−pole source transistors on alternate oscillator cycles.In conventional push−pull bipolar designs, forward base drive is controlled by R1−R3. Rapid turn−off times for the power devicesare achieved with speed−up capacitors C1 and C2.+V The low source impedance of the output drivers provides rapid charging of power FET input capacitance while minimizing external components.+VC1C2Figure 13. Driving Transformers in aHalf−Bridge ConfigurationPACKAGE DIMENSIONSPDIP−16N SUFFIXCASE 648−08ISSUE TNOTES:1.DIMENSIONING AND TOLERANCING PERANSI Y14.5M, 1982.2.CONTROLLING DIMENSION: INCH.3.DIMENSION L TO CENTER OF LEADSWHEN FORMED PARALLEL.4.DIMENSION B DOES NOT INCLUDEMOLD FLASH.5.ROUNDED CORNERS OPTIONAL.M DIM MIN MAX MIN MAXMILLIMETERSINCHESA0.7400.77018.8019.55 B0.2500.270 6.35 6.85 C0.1450.175 3.69 4.44 D0.0150.0210.390.53 F0.0400.70 1.02 1.77 G0.100 BSC 2.54 BSCH0.050 BSC 1.27 BSCJ0.0080.0150.210.38 K0.1100.130 2.80 3.30 L0.2950.3057.507.74 M0 10 0 10 S0.0200.0400.51 1.01____PACKAGE DIMENSIONSSOIC−16LDW SUFFIXCASE 751G−03ISSUE Cq NOTES:1.DIMENSIONS ARE IN MILLIMETERS.2.INTERPRET DIMENSIONS AND TOLERANCESPER ASME Y14.5M, 1994.3.DIMENSIONS D AND E DO NOT INLCUDEMOLD PROTRUSION.4.MAXIMUM MOLD PROTRUSION 0.15 PER SIDE.5.DIMENSION B DOES NOT INCLUDE DAMBARPROTRUSION. ALLOWABLE DAMBARPROTRUSION SHALL BE 0.13 TOTAL INEXCESS OF THE B DIMENSION AT MAXIMUMMATERIAL CONDITION.DIM MIN MAXMILLIMETERSA 2.35 2.65A10.100.25B0.350.49C0.230.32D10.1510.45E7.407.60e 1.27 BSCH10.0510.55h0.250.75L0.500.90q0 7 __ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.PUBLICATION ORDERING INFORMATION。

BAW56中文资料

DATASHEETProduct speciﬁcationSupersedes data of 1996Sep 171999May 11DISCRETE SEMICONDUCTORSBAW56High-speed double diodebook, halfpageM3D088High-speed double diodeBAW56FEATURES•Small plastic SMD package •High switching speed: max.4ns •Continuous reverse voltage:max.75V•Repetitive peak reverse voltage:max.85V•Repetitive peak forward current:max. 450mA.APPLICATIONS•High-speed switching in thick and thin-film circuits.DESCRIPTIONThe BAW56 consists of twohigh-speed switching diodes with common anodes, fabricated in planar technology, and encapsulated in the small SOT23 plastic SMD package.PINNINGPIN DESCRIPTION 1cathode (k1)2cathode (k2)3common anodeFig.1 Simplified outline (SOT23) and symbol.Marking code: A1p =made in Hong Kong; A1t =made in Malaysia.handbook, 4 columns213MAM206Top view213LIMITING VALUESIn accordance with the Absolute Maximum Rating System (IEC 134).Note1.Device mounted on an FR4 printed-circuit board.SYMBOL PARAMETERCONDITIONSMIN.MAX.UNITPer diode V RRM repetitive peak reverse voltage −85V V R continuous reverse voltage −75V I Fcontinuous forward currentsingle diode loaded; note 1;see Fig.2−215mA double diode loaded; note 1;see Fig.2−125mA I FRM repetitive peak forward current −450mAI FSMnon-repetitive peak forward currentsquare wave; T j =25°C prior to surge; see Fig.4t =1µs −4A t =1ms −1A t =1s−0.5A P tot total power dissipation T amb =25°C; note 1−250mW T stg storage temperature −65+150°C T j junction temperature−150°CHigh-speed double diodeBAW56ELECTRICAL CHARACTERISTICS T j =25°C unless otherwise speciﬁed.THERMAL CHARACTERISTICS Note1.Device mounted on an FR4 printed-circuit board.SYMBOL PARAMETERCONDITIONSMAX.UNITPer diode V Fforward voltagesee Fig.3I F =1mA 715mV I F =10mA 855mV I F =50mA 1V I F =150mA1.25V I Rreverse currentsee Fig.5V R =25V 30nA V R =75V1µA V R =25V; T j =150°C 30µA V R =75V; T j =150°C50µA C d diode capacitance f =1MHz; V R =0; see Fig.62pF t rrreverse recovery timewhen switched from I F =10mA to I R =10mA; R L =100Ω;measured at I R =1mA; see Fig.74nsV frforward recovery voltage when switched from I F =10mA;t r =20ns; see Fig.81.75VSYMBOL PARAMETERCONDITIONSVALUE UNIT R th j-tp thermal resistance from junction to tie-point 360K/W R th j-a thermal resistance from junction to ambientnote 1500K/WHigh-speed double diodeBAW56GRAPHICAL DATADevice mounted on an FR4 printed-circuit board.Fig.2Maximum permissible continuous forward current as a function of ambient temperature.02003000100200MBD033100I F (mA)T ( C)ambosingle diode loadeddouble diode loaded(1)T j =150°C; typical values.(2)T j =25°C; typical values.(3)T j =25°C; maximum values.Fig.3Forward current as a function of forward voltage.handbook, halfpage02300I F(mA)100200MBG3821V F (V)(1)(3)(2)Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration.Based on square wave currents.T j =25°C prior to surge.handbook, full pagewidthMBG70410t p (µs)1I FSM (A)10210−1104102103101High-speed double diode BAW56Fig.5Reverse current as a function of junction temperature.105104102000MGA884100T ( C)jo I R (nA)10310275 V25 VtypmaxV = 75 V RtypFig.6Diode capacitance as a function of reverse voltage; typical values.f =1MHz; T j =25°C.handbook, halfpage025V R (V)2.50.5MBH1911.01.52.05C d (pF)101520High-speed double diode BAW56Fig.7 Reverse recovery voltage test circuit and waveforms.handbook, full pagewidtht rr(1)I F toutput signalt rtt p10%90%V Rinput signal V = V I x R R F SR = 50SΩI FD.U.T.R = 50iΩSAMPLING OSCILLOSCOPEMGA881(1)I R =1mA.Fig.8 Forward recovery voltage test circuit and waveforms.t rtt p10%90%Iinputsignal R = 50SΩIR = 50iΩOSCILLOSCOPEΩ1 k Ω450 D.U.T.MGA882V frtoutput signalVHigh-speed double diodeBAW56PACKAGE OUTLINEUNIT A 1max.b p c D E e 1H E L p Q w v REFERENCESOUTLINE VERSION EUROPEAN PROJECTIONISSUE DATE 97-02-28IECJEDECEIAJmm0.10.480.380.150.093.02.81.41.20.95e 1.92.52.10.550.450.10.2DIMENSIONS (mm are the original dimensions)0.450.15SOT23b pD e 1eAA 1L pQdetail XH EE w M v M ABAB 01 2 mmscaleA 1.10.9cX123Plastic surface mounted package; 3 leadsSOT23High-speed double diode BAW56DEFINITIONSData Sheet StatusObjective speciﬁcation This data sheet contains target or goal speciﬁcations for product development. Preliminary speciﬁcation This data sheet contains preliminary data; supplementary data may be published later. Product speciﬁcation This data sheet contains ﬁnal product speciﬁcations.Limiting valuesLimiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the speciﬁcation is not implied. Exposure to limiting values for extended periods may affect device reliability.Application informationWhere application information is given, it is advisory and does not form part of the speciﬁcation.LIFE SUPPORT APPLICATIONSThese products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.High-speed double diode BAW56NOTESHigh-speed double diode BAW56NOTESPhilips Semiconductors Product speciﬁcation High-speed double diode BAW56NOTES1999May1111© Philips Electronics N.V. SCA All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.Internet: 199964Philips Semiconductors – a worldwide company Netherlands: Postbus 90050, 5600PB EINDHOVEN, Bldg.VB,Tel.+31402782785,Fax.+31402788399New Zealand: 2Wagener Place, C.P.O.Box 1041, AUCKLAND,Tel.+6498494160,Fax.+6498497811Norway: Box 1, Manglerud 0612, OSLO,Tel.+4722748000,Fax.+4722748341Pakistan: see Singapore Philippines: Philips Semiconductors Philippines Inc.,106Valero St.Salcedo Village, P.O.Box 2108MCC,MAKATI,Metro MANILA, Tel.+6328166380,Fax.+6328173474Poland: Ul.Lukiska 10, PL 04-123WARSZAWA,Tel.+48226122831,Fax.+48226122327Portugal: see Spain Romania: see Italy Russia: Philips Russia, atcheva 35A, 119048MOSCOW,Tel.+70957556918,Fax.+70957556919Singapore: Lorong 1, Toa Payoh, SINGAPORE 319762,Tel.+653502538,Fax.+652516500Slovakia: see Austria Slovenia: see Italy South Africa: S.A. 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Buncit Raya Kav.99-100, JAKARTA 12510,Tel.+62217940040ext.2501, Fax.+62217940080Ireland: Newstead, Clonskeagh, DUBLIN 14,Tel.+35317640000,Fax.+35317640200Israel: RAPAC Electronics, 7Kehilat Saloniki St, PO Box 18053,TEL AVIV 61180, Tel.+97236450444,Fax.+97236491007Italy: PHILIPS SEMICONDUCTORS, Piazza IV Novembre 3,20124MILANO, Tel.+390267522531,Fax.+390267522557Japan: Philips Bldg 13-37, Kohnan 2-chome, Minato-ku,TOKYO 108-8507, Tel.+81337405130,Fax.+81337405077Korea: Philips House, 260-199Itaewon-dong, Yongsan-ku, SEOUL,Tel.+8227091412,Fax.+8227091415Malaysia: No.76Jalan Universiti, 46200PETALING JAYA, SELANGOR,Tel.+60 37505214,Fax.+6037574880Mexico: 5900Gateway East, Suite 200, EL PASO, TEXAS 79905,Tel.+9-58002347381, Fax +9-58009430087Middle East: see Italy Printed in The Netherlands 115002/00/03/pp12 Date of release: 1999May 11Document order number: 939775005948。

2N5401中文资料_数据手册_参数

IC mA
−103
1999 Apr 08
4
Philips Semiconductors
PNP high-voltage transistor
PACKAGE OUTLINE Plastic single-ended leaded (through hole) package; 3 leads
Product speciﬁcation
Product speciﬁcation
2N5401
DEFINITIONS
Data sheet status
Objective speciﬁcation Preliminary speciﬁcation Product speciﬁcation
This data sheet contains target or goal speciﬁcations for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains ﬁnal product speciﬁcations.
−
DC current gain
IC = −1 mA; VCE = −5 V; see Fig.2
50
IC = −10 mA; VCE = −5 V; see Fig.2
60
IC = −50 mA; VCE = −5 V; see Fig.2
50
collector-emitter saturation voltage IC = −10 mA; IB = −1 mA
DESCRIPTION PNP high-voltage transistor in a TO-92; SOT54 plastic package. NPN complement: 2N5551.

钢芯铝绞线参数

技术部分1.总则1.1.1我公司提供的产品满足招标文件提出的技术要求。

1.1.2设备参数，使用时间见下表：1.1.3产品业绩见附表1.1.4我公司满足国家经贸委关于发布全国城乡电网建设与改造所需主要设备产品及生产企业推荐目录通知中对产品和厂家的要求，产品型号使用证书、质量体系认证证书及计量合格证书见附表1.1.5稀土铝导线鉴定证书见附表1.1.6产品型式试验报告见附表1.1.7差异表见附表2.遵循标准3．主要技术要求3.1环境条件导线使用的工作环境满足下表的要求3.2技术参数表，见下表：铝绞线技术参数表一铝绞线技术参数表二3.3导体铝导体材料为Ａοο铝。

产地和品牌见下表差异表镀锌钢丝符合GB/T3428-1997的规定，厂家选用中水广海钢丝绳厂、巩义恒星金属制品有限公司生产的镀锌钢丝和钢绞线。

原材料进厂严格检验把关，不合格的材料不准投入使用。

3.４加工工艺3.4.1通过调整连铸连轧工艺中的铝液微量元素（稀土）的成份以及控制生产工艺条件，保证铝杆的强度和电阻率。

在此工艺过程中，严格控制铝水的精练温度和时间，扒渣和搅拌，保证铝杆化学成份的均匀性和稳定性。

3.4.２具有滑动式连续高速拉丝机，和非滑动式拉丝机，精确的配模，保证铝单线直径和抗拉强度的稳定性。

3.4.３具有带有预扭装置的高速500型和630型框式绞线机，均匀、紧密的绞制工艺技术。

具有断线保护装置，保证产品的质量。

生产的铝绞线、钢芯铝绞线外形圆整、均匀。

通过调整预扭装置导轮的位置，消除应力，确保导线的紧密度，保证导线切割后无明显的回扭或散股现象。

3.4.４采用喉箍锁紧导线的端头，保证导线的紧密程度，在正常放线时，不会出现任何“灯笼现象”。

3.4.４采用接头性能优良的冷压焊接技术，保证接头处的强度不低于铝线母体强度的90%.3.５清洁拉丝时，采用多道次的钻石拉模，保证表面的光洁度，避免铝单线表面粘附有过多的拉丝油和粉尘，并将框绞机的出线嘴、导轮、牵引等采用柔软、耐磨的材料，保证在生产过程中不损伤导线表面，确保导线表面清洁、光亮，不得有过量的拉丝油和金属粉尘，也不得有明显的划伤、压痕和与良好的商品不相知称的任何缺陷。

复合材料芯架空导线

复合材料芯架空导线1 范围本标准规定了复合材料芯架空导线（以下简称复合芯导线）的产品分类、技术要求、试验方法、检验规则、标志、包装。

本标准适用于架空电力线路用复合材料芯架空导线。

2 术语和定义GB/T 1179-2008界定的及下列术语和定义适用于本文件。

2.1复合材料芯架空导线overhead electrical stranded conductors composite core supported /reinforced由铝（或铝合金）线与复合材料芯同心绞合而成的导线。

2.1.1复合材料芯软铝型线绞线the formed annealed aluminium conductors composite core supported 由软铝型线与纤维增强树脂基复合材料芯棒同心绞合而成的绞线。

2.1.2复合材料芯耐热铝合金绞线the thermal-resistant aluminium conductors composite core reinforced由耐热铝合金线与纤维增强树脂基复合材料芯棒同心绞合而成的绞线。

2.1.3复合材料芯耐热铝合金型线绞线the formed thermal-resistant aluminium conductors composite core reinforced由耐热铝合金型线与纤维增强树脂基复合材料芯棒同心绞合而成的绞线。

2.2绞向direction of lay一层单线离开观察者运动的绞合方向。

右向为顺时针方向，左向为逆时针方向。

另一种定义：右向即当绞线垂直放置时，单线符合英文字母Z中间部分的方向；左向即当绞线垂直放置时，单线符合英文字母S中间部分的方向。

2.3等效单线直径equivalent wire diameter与已定相同材料和状态的型线具有相同截面积、质量及电阻的圆单线的直径。

2.4填充系数fill ratio面积1与（面积2-面积3）之比——此处，面积1是导线铝部分的横截面积，面积2是以导线外径为直径的圆的理论计算面积，面积3是导线中以芯棒的外径为直径的圆的理论计算面积。

《铝合金门窗地工程设计、施工及验收地要求规范》DBJ15-30-2002全文

《铝合金门窗工程设计、施工及验收规范》DBJ15-30-2002简介：内容：1、总则2、术语、符号2.1 术语2.2 符号3、材料要求3.1 一般规定3.2 铝合金型材3.4 五金配件3.5 密封材料3.6 金属连接件3.7紧固件4、工程设计4.1 一般规定4.2 抗风压性能设计4.3 水密性能设计4.4 气密性能设计4.5 隔声性能设计4.6 隔热性能设计4.7 防玻璃热炸裂设计4.8 玻璃镶嵌结构设计4.9 防雷设计4.10 其它安全性设计4.11 门窗立面建筑设计5、安装施工5.1 一般规定5.2 施工准备5.3 安装施工5.4 产品保护5.5 安全技术措施6、工程验收6.1 一般规定6.2 主控项目6.3 一般项目6.4 检验规则6.5 质量验收本规范用词用语说明条文说明1 总则1.0.1为满足建筑工程的需要,使铝合金门窗的性能符合建筑功能的要求,保证铝合金门窗工程的质量,针对本省的气候特点和工程建设的实际情况,制定本规范。

1.0.2本规范适用于本省范围内的工业与民用建筑铝合金门窗工程的设计、施工及验收。

其它材料制作的建筑门窗可参照本规范。

1.0.3本规范中的铝合金门窗（以下简称铝门窗）是指在建筑物上的安装高度不大于100m、无特殊功能要求（如防火、防爆、防化学腐蚀等）的铝门窗。

本规范不适用于建筑幕墙上的铝门窗、斜屋顶窗和采光天窗等工程。

安装高度大于100m 的门窗工程应采取相应的措施。

1.0.4铝门窗工程的设计、施工及验收，除应符合本规范外，尚应符合国家现行的有关标准、规范的规定。

2 术语、符号2.1.1 主型材连接组合成门窗框基本构架，在其上装配玻璃、辅型材和开启扉及其它附件的门窗框材；连接组合成门窗扇基本构架，在其上装配玻璃、辅型材及其它附件的门窗扇挺型材。

2.1.2 辅型材门窗框架构件体系中，镶嵌或固定于主型材构件上，起到传力或某各功能作用的附加型材（如玻璃压条、披水条等）。

2.1.3 主要受力构件门窗立面内承受并传递门窗自身重力及水平风荷载等作用力的中横框、中竖框、扇挺等主型材，以及组合门窗拼樘框型材。

电力外线金具知识

金具的概述
2、金具的用途金具的用途: 金具的用途 1）、悬垂金具这种金具主要用来悬挂导悬垂金具: 悬垂金具
线或光缆于绝缘子或者杆塔上(多用于直线杆塔线或光缆于绝缘子或者杆塔上多用于直线杆塔) 多用于直线杆塔
2）、耐张金具:这种金具用来紧固导线终）、耐张金具）、耐张金具
端，使其固定在耐张绝缘子串上，也可以地线、使其固定在耐张绝缘子串上，也可以地线、光缆及拉线上（多用于转角或者终端杆塔上）光缆及拉线上（多用于转角或者终端杆塔上）
特点：线路不需要安装间隔棒，各线夹可以单独在挂板上转动，受到风荷载时，线夹与绝缘子一起摆动。材料：铝合金制件
适用范围：双分列中小适用范围截面的钢芯铝绞线或铝绞线（220KV）
悬垂线夹
6、悬垂线夹（XGF/CGF）、悬垂线夹（）
握力大，电晕小、重量轻、磁损小等。特点：握力大，电晕小、重量轻、磁损小等。材料：铝合金适用范围：适用范围：500KV四分裂导线四分裂导线
首字母
张 L 联板 P
J 接续 Q
F 防护 U
T T接
S 设备 W 碗头挂板
M 母线 Y 延长 Z 直角、十字
首字母
分类名称
首字母分类名称
平球头、行牵引
U型挂环 U型螺丝
金具的命名
1.2、命名规则命名规则
第二、第二、三位字母的意义
字母 B C D F G H J K L M N 意义板、爆、并、避、包、变、补槽、垂、锤、悬倒、单、导、吊、搭方、防、封固、钢、过、隔、钩、管环、护、合、弧矩、间、均、加、绞、绝卡、扛、扩螺、拉、立、菱、铝母内字母 P Q R S T U V W X Z Y 意义平、屏球、牵、轻软双、三、伸、设椭、跳、调、T U形形 V形形外、碗楔、修、悬终、支、组、十、重、（牵压、圆、（牵）引、预