IRFP4410ZPBF中文资料

Continuous Drain Current, VGS @ 10V (Silicon Limited) Continuous Drain Current, VGS @ 10V (Silicon Limited)
Pulsed Drain Current
Maximum Power Dissipation
VDSS R D S (o n )
typ. max.
ID (Silicon Limited)
100V 7.2m: 9.0m:
97A
D
D
G
G
Gate
S D G
TO-247AC S
D
Drain
S
Source
Absolute Maxim um Ratings
Symbol
Parameter
ID @ TC = 25°C ID @ TC = 100°C IDM PD @T C = 25°C
Fig 3. Typical Transfer Characteristics
1
10
100
VDS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
1000
VDS = 50V ≤60µs PULSE WIDTH
100
10 TJ = 175°C
1
TJ = 25°C
ID, Drain-to-Source Current (A)
D
showing the
––– ––– 390 A integral reverse
G
p-n junction diode.
S
––– ––– 1.3 V TJ = 25°C, IS = 58A, VGS = 0V f
––– 38 57 ns TJ = 25°C
VR = 85V,
––– 46 69
TJ = 125°C
1000 100
TOP BOTTOM
VGS 15V 10V 8.0V 6.0V 5.5V 5.0V 4.8V 4.5V
IRFP4410ZPbF
4.5V
10
1 0.1
≤60µs PULSE WIDTH Tj = 175°C
1
10
100
VDS, Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
2

元器件交易网
ID, Drain-to-Source Current (A)
1000 100
TOP BOTTOM
VGS 15V 10V 8.0V 6.0V 5.5V 5.0V 4.8V 4.5V
4.5V 10
1 0.1
≤60µs PULSE WIDTH Tj = 25°C
(1.6mm from case)
Mounting torque, 6-32 or M3 screw
Avalanche Characteristics
EAS (T hermally limited) IAR EAR
d Single Pulse Avalanche Energy à Avalanche Current f Repetitive Avalanche Energy
-55 to + 175
300
x x 10lb in (1.1N m)
242 See Fig. 14, 15, 22a, 22b,
Typ. ––– 0.24 –––
Max. 0.65 ––– 40
Units A W
W/°C V
V/ns °C
mJ A mJ
Units °C/W
1
03/07/08
元s a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS. Coss eff. (ER) is a fixed capacitance that gives the same energy as
–––
RDS(on)
Static Drain-to-Source On-Resistance
–––
VGS(th)
Gate Threshold Voltage
2.0
IDSS
Drain-to-Source Leakage Current
–––
–––
IGSS
Gate-to-Source Forward Leakage
Notes: Repetitive rating; pulse width limited by max. junction
temperature. Limited by TJmax, starting TJ = 25°C, L = 0.143mH
RG = 25Ω, IAS = 58A, VGS =10V. Part not recommended for use above this value. ISD ≤ 58A, di/dt ≤ 610A/µs, VDD ≤ V(BR)DSS, TJ ≤ 175°C. Pulse width ≤ 400µs; duty cycle ≤ 2%.
–––
VGS = 0V, VDS = 0V to 80V g
Diode Characteristics
Symbol
Parameter
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode) c
VSD
Diode Forward Voltage
Linear Derating Factor
VG S
dv/dt TJ TSTG
Gate-to-Source Voltage
e Peak Diode Recovery
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
IRFP4410ZPbF
Static @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min.
V(BR)DSS
Drain-to-Source Breakdown Voltage
100
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
元器件交易网
PD - 97309A
IRFP4410ZPbF
HEXFET® Power MOSFET
Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits
250
VDS = 80V, VGS = 0V, TJ = 125°C
100 nA VGS = 20V
-100 –––
VGS = -20V Ω
Max. Units
Conditions
––– S VDS = 10V, ID = 58A
120 nC ID = 58A
–––
VDS =50V
VGS = 10V f
2.5 ID = 58A VGS = 10V
2.0
1.5
1.0
RDS(on) , Drain-to-Source On Resistance (Normalized)
ID, Drain-to-Source Current (A)
0.1
2
3
4
5
6
7
VGS, Gate-to-Source Voltage (V)
Thermal Resistance
Symbol RπJC
Parameter
j Ju n ctio n- to- Ca se
RπCS RπJA
Case-to-Sink, Flat Greased Surface
j Ju n ctio n- to- A mb ie nt

Max. 97 69 390 230 1.5 ± 20 16
–––
ID = 58A, VDS =0V, VGS = 10V f
––– ns VDD = 65V
–––
ID = 58A
–––
RG =2.7Ω
–––
VGS = 10V f
––– pF VGS = 0V
–––
VDS = 50V
–––
ƒ = 1.0MHz, See Fig.5
–––
VGS = 0V, VDS = 0V to 80V h, See Fig.11
––– 53 80 nC TJ = 25°C
IF = 58A di/dt = 100A/µs f
––– 82 120
TJ = 125°C
––– 2.5 ––– A TJ = 25°C
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge