DTA143ZM中文资料
DTC143ECA中文资料
DTC143ESA
TO-92S
l Any changing of specification will not be informed individua
01-Jun-2002 Rev. A
Page 1 of 2
DTC143EE/DTC143EUA/DTC143EKA DTC143ECA/TC143ESA
Elektronische Bauelemente
NPN Digital Transistors (Built-in Resistors)
Absolute maximum ratings(Ta=25℃)
Parameter Supply voltage Input voltage Output current Power dissipation Junction temperature Storage temperature
Typ Max. 0.5 Unit V V mA µA Conditions VCC=5V ,IO=100µA VO=0.3V ,IO=20 mA IO/II=10mA/0.5mA VI=5V VCC=50V ,VI=0 VO=5V ,IO=10mA 4.7 1 250 6.11 1.2 MHz KΩ
PIN CONNENCTIONS AND MARKING
DTC143EE DTC143EUA
SOT-523
Abbreviated symbol: 23
SOT-323
Abbreviated symbol: 23
DTC143EKA
DTA114ECA DTC143ECA
SOT-23-3L Abbreviated symbol: 23 SOT-23 Abbreviated symbol: 23
DDTC124XUA-7-F;DDTC143XUA-7-F;DDTC114WUA-7-F;DDTC114YUA-7-F;DDTC143FUA-7-F;中文规格书,Datasheet资料
DDTC (R1≠R2 SERIES) UANPN PRE-BIASED SMALL SIGNAL SURFACE MOUNT TRANSISTORFeatures• Ordering Information: See Page 4 • Weight: 0.006 grams (approximate)P/N R1 (NOM) R2 (NOM) Type CodeDDTC113ZUA DDTC123YUA DDTC123JUA DDTC143XUA DDTC143FUA DDTC143ZUA DDTC114YUA DDTC114WUA DDTC124XUA DDTC144VUA DDTC144WUA 1K Ω2.2K Ω2.2K Ω 4.7K Ω4.7K Ω 4.7K Ω 10K Ω10K Ω22K Ω47K Ω47K Ω10K Ω 10K Ω 47K Ω 10K Ω 22K Ω 47K Ω 47K Ω 4.7K Ω 47K Ω 10K Ω 22K Ω N02 N05 N06 N09 N10 N11 N14 N15 N18 N21 N22SOT-323Dim Min Max A 0.25 0.40 B 1.15 1.35 C 2.00 2.20 D0.65 NominalE 0.30 0.40 G1.20 1.40 H 1.802.20 J 0.0 0.10 K 0.90 1.00 L 0.25 0.40 M0.100.18α0° 8° All Dimensions in mmMaximum Ratings @T A = 25°C unless otherwise specifiedCharacteristicSymbol Value Unit Supply Voltage, (3) to (2)V CC50 VInput Voltage, (1) to (2) DDTC113ZUA DDTC123YUA DDTC123JUA DDTC143XUA DDTC143FUA DDTC143ZUA DDTC114YUA DDTC114WUA DDTC124XUA DDTC144VUA DDTC144WUA V IN -5 to +10 -5 to +12 -5 to +12 -7 to +20 -6 to +30 -5 to +30 -6 to +40 -10 to +30 -10 to +40 -15 to +40 -10 to +40 VOutput Current DDTC113ZUA DDTC123YUA DDTC123JUA DDTC143XUA DDTC143FUA DDTC143ZUA DDTC114YUA DDTC114WUA DDTC124XUA DDTC144VUA DDTC144WUA I O 100 100 100 100 100 100 70 100 50 30 30 mAOutput Current AllI C (Max) 100mANotes: 1. No purposefully added lead. 2. Diodes Inc.'s "Green" policy can be found on our website at /products/lead_free/index.php. 3. Product manufactured with Date Code 0627 (week 27, 2006) and newer are built with Green Molding Compound. Product manufactured prior to Date Code 0627 are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.R1OUT B CE R2321IN GND(0)132GND (0)C BIN OUTESchematic and Pin Configuration Equivalent Inverter CircuitMaximum Ratings (continued)@T A = 25°C unless otherwise specifiedCharacteristic Symbol Value Unit Output Current All I C (Max) 100 mA Power Dissipation P d200 mW Thermal Resistance, Junction to Ambient Air (Note 4) RθJA625 °C/W Operating and Storage Temperature Range T j, T STG-55 to +150 °CNotes: 4. Mounted on FR4 PC Board with recommended pad layout at /datasheets/ap02001.pdf.Electrical Characteristics@T A = 25°C unless otherwise specifiedCharacteristic Symbol Min Typ Max Unit Test ConditionInput Voltage DDTC113ZUADDTC123YUADDTC123JUADDTC143XUADDTC143FUADDTC143ZUADDTC114YUADDTC114WUADDTC124XUADDTC144VUADDTC144WUAV l(off)0.30.30.50.30.30.50.30.80.41.00.8⎯⎯V CC = 5V, I O = 100μAInput Voltage DDTC113ZUADDTC123YUADDTC123JUADDTC143XUADDTC143FUADDTC143ZUADDTC114YUADDTC114WUADDTC124XUADDTC144VUADDTC144WUAV l(on)⎯⎯3.03.01.12.51.31.31.43.02.55.04.0V V O = 0.3V, I O = 20mAV O = 0.3V, I O = 20mAV O = 0.3V, I O = 5mAV O = 0.3V, I O = 20mAV O = 0.3V, I O = 3mAV O = 0.3V, I O = 5mAV O = 0.3V, I O = 1mAV O = 0.3V, I O = 2mAV O = 0.3V, I O = 2mAV O = 0.3V, I O = 2mAV O = 0.3V, I O = 2mAOutput Voltage V O(on)⎯0.1 0.3 V I O/I l = 5mA/0.25mA DDTC123JUA I O/I l = 5mA/0.25mA DDTC143ZUA I O/I l = 5mA/0.25mA DDTC114YUA I O/I l = 10mA/0.5mA All OthersInput Current DDTC113ZUADDTC123YUADDTC123JUADDTC143XUADDTC143FUADDTC143ZUADDTC114YUADDTC114WUADDTC124XUADDTC144VUADDTC144WUAI l⎯⎯7.23.83.61.81.81.80.880.880.360.160.16mA V I = 5VOutput Current I O(off)⎯⎯0.5 μA V CC = 50V, V I = 0VDC Current Gain DDTC113ZUADDTC123YUADDTC123JUADDTC143XUADDTC143FUADDTC143ZUADDTC114YUADDTC114WUADDTC124XUADDTC144VUADDTC144WUAG l3333803068806824683356⎯⎯⎯V O = 5V, I O = 5mAV O = 5V, I O = 10mAV O = 5V, I O = 10mAV O = 5V, I O = 10mAV O = 5V, I O = 10mAV O = 5V, I O = 10mAV O = 5V, I O = 5mAV O = 5V, I O = 10mAV O = 5V, I O = 5mAV O = 5V, I O = 5mAV O = 5V, I O = 5mAInput Resistor Tolerance ΔR1-30 ⎯+30 % ⎯Resistance Ratio Tolerance ΔR2/R1-20 ⎯+20 % ⎯Gain-Bandwidth Product* f T⎯250 ⎯MHz V CE = 10V, I E = 5mA,f = 100MHz* Transistor - For Reference OnlyTypical Curves – DDTC123JUA-5005010025020015050100T , AMBIENT TEMPERATURE (C)Fig. 1 Derating CurveA °150P , P O W E R D I S S I P A T I O N (m W )D 0.0010.010.111020304050V , C O L L E C T O R E M I T T E R V O L T A G E (V )C E (S A T )I , COLLECTOR CURRENT (mA)Fig. 2 V vs. IC CE(SAT) C101,000100110h , D 100C C U R R E N T G A I NF E I , COLLECTOR CURRENT (mA)Fig. 3 DC Current GainC012342030C , C A P A C IT A N C E (p F )O B V , REVERSE BIAS VOLTAGE (V)Fig. 4 Output CapacitanceR 10515250.0010.01110100012348910I , C O L L E C T O R C U R R E N T (m A )C V , INPUT VOLTAGE (V)Fig. 5 Collector Current vs. Input Voltagein 5670.10.111010203040I , COLLECTOR CURRENT (mA)Fig. 6 Input Voltage vs. Collector CurrentC 50V , I N P U T V O L T A G E (V )i nOrdering Information (Note 3 & 5)Device Packaging Shipping DDTC113ZUA-7-F SOT-323 3000/Tape & ReelDDTC123YUA-7-F SOT-323 3000/Tape & ReelDDTC123JUA-7-F SOT-323 3000/Tape & ReelDDTC143XUA-7-F SOT-323 3000/Tape & ReelDDTC143FUA-7-F SOT-323 3000/Tape & ReelDDTC143ZUA-7-F SOT-323 3000/Tape & ReelDDTC114YUA-7-F SOT-323 3000/Tape & ReelDDTC114WUA-7-F SOT-323 3000/Tape & ReelDDTC124XUA-7-F SOT-323 3000/Tape & ReelDDTC144VUA-7-F SOT-323 3000/Tape & ReelDDTC144WUA-7-F SOT-323 3000/Tape & Reel Notes: 5. For packaging details, go to our website at /datasheets/ap02007.pdf.Marking InformationDate Code Key NXXYMNXX = Product Type Marking CodeSee Page 1 DiagramsYM = Date Code MarkingY = Year ex: T = 2006M = Month ex: 9 = SeptemberYear20022003200420052006200720082009201020112012 Code N P R S T U V W X Y ZMonth Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec Code 1 2 3 4 5 6 7 8 9 O N DIMPORTANT NOTICEDiodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages.LIFE SUPPORTDiodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the President of Diodes Incorporated.分销商库存信息:DIODESDDTC124XUA-7-F DDTC143XUA-7-F DDTC114WUA-7-F DDTC114YUA-7-F DDTC143FUA-7-F DDTC143ZUA-7-F DDTC144VUA-7-F DDTC144WUA-7-F DDTC144WUA-7 DDTC144VUA-7DDTC143ZUA-7DDTC123JUA-7 DDTC123JUA-7-F DDTC114WUA-7DDTC113ZUA-7 DDTC113ZUA-7-F DDTC114YUA-7DDTC124XUA-7 DDTC123YUA-7-F DDTC143FUA-7DDTC123YUA-7 DDTC143XUA-7。
1439-3;1439-4;中文规格书,Datasheet资料
PLATING Gold/Gold Tin/Tin Tin/Gold
PLATING OPTIONS
CONTACT
BODY SPRING
Gold
Gold
Tin/Lead Tin/Lead
Tin/ Lead
Gold
RoHS Compliant
Non-Compliant
.015 (.38) - .021 (.53) PIN - PRESS FIT
contact maintains retention after multiple insertions • Ideal for mounting transistors, resistors, diodes, IC’s and similar miniature components • Custom micro jacks manufactured to your specifications • Other platings available upon request
1641A 1641B 1641C .122 (3.1)
NON-RoHS
Mtg.
GOLD/GOLD TIN/TIN TIN/GOLD Hole
CAT. NO. CAT. NO. CAT. NO. Dia.
1697 1698 1699 .063 (1.60)
.025 (.64) - .037 (.94) PIN - SOLDER MOUNT
6-FINGER CLOSED ENTRY CONTACT
GOLD/GOLD TIN/TIN TIN/GOLD Hole
CAT. NO. CAT. NO. CAT. NO. Dia.
1603 1606 1607 .052 (1.32)
DTA143ZUBTL;中文规格书,Datasheet资料
Typ. -0.1 4.7 10 250
Max. -0.5 -0.3 -1.8 -0.5 6.11 12 -
Unit V V mA mA kW MHz
*1 Characteristics of built-in transistor *2 Each terminal mounted on a reference footprint
DIM A A1 A2 b c D E e HE L Lp x DIM e1 b2 l1
Dimension in mm/inches
© 2012 ROHM Co., Ltd. All rights reserved.
6/10
/
e1
2012.04 - Rev.A
VCC = -5V, IO = -100μA VO = -0.3V, IO = -5mA IO / II = -5mA / -0.25mA VI = -5V VCC = -50V, VI = 0V VO = -5V, IO = -10mA VCE = -10V, IE = 5mA, f = 100MHz
VCC IC(MAX.) R1 R2
lFeatures
-50V -100mA 4.7kW 47kW
EMT3
DTA143ZM (SC-105AA)
UMT3F OUT IN GND
DTA143ZEB (SC-89)
OUT IN GND
1) Built-In Biasing Resistors 2) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see inner circuit). 3) The bias resistors consist of thin-film resistors with complete isolation to allow negative biasing of the input. They also have the advantage of completely eliminating parasitic effects. 4) Only the on/off conditions need to be set for operation, making the circuit design easy. 5) Complementary NPN Types :DTC143Z series 6) Lead Free/RoHS Compliant. lApplication Switching circuit, Inverter circuit, Interface circuit, Driver circuit
DTC143ZUBTL;中文规格书,Datasheet资料
DTC143ZE SOT-416 (SC-75A)
UMT3 OUT IN GND SMT3
DTC143ZUB (SC-85)
OUT IN GND
DTC143ZUA SOT-323 (SC-70)
DTC143ZKA SOT-346 (SC-59)
lInner circuit
lPackaging specifications Part No. DTC143ZM DTC143ZEB DTC143ZE DTC143ZUB DTC143ZUA DTC143ZKA Package VMT3 EMT3F EMT3 UMT3F UMT3 SMT3 Package size (mm) 1212 1616 1616 2021 2021 2928 Taping code T2L TL TL TL T106 T146 Basic Reel size Tape width ordering (mm) (mm) unit (pcs) 180 180 180 180 180 180 8 8 8 8 8 8 8,000 3,000 3,000 3,000 3,000 3,000 Marking E23 E23 E23 123 123 E23
Data Sheet
EMT3F
D
A
x
S A
b e
HE
E
c
e
A2
A
A1
S
l1
b2
Patterm of terminal position areas
MILIMETERS MIN MAX 0.65 0.85 0.00 0.10 0.60 0.80 0.21 0.36 0.08 0.18 1.50 1.70 0.76 0.96 0.50 1.50 1.70 0.37 0.35 0.55 0.10 MILIMETERS MIN MAX 1.05 0.46 0.65 INCHES MIN 0 0.024 0.008 0.003 0.059 0.03 0.02 0.059 0.015 0.014 INCHES MIN MAX 0.041 0.018 0.026 0.022 0.004 0.067 MAX 0.004 0.031 0.014 0.007 0.067 0.038
DDTA143ECA中文资料
2005 S
Jan
Feb March Apr
May Jun
1
2
3
4
5
6
2006 T
2007 U
Jul Aug Sep
7
8
9
2008 V
2009 W
Oct
Nov Dec
O
N
D
DS30333 Rev. 2 - 2
2 of 3
DDTA (R1 = R2 SERIES) CA
NEW PRODUCT
Pd, POWER DISSIPATION (MILLIWATTS)
Output Current
All
Power Dissipation
Thermal Resistance, Junction to Ambient Air (Note 1)
Operating and Storage and Temperature Range
Symbol VCC
VIN
IO
IC (Max) Pd RqJA
J 0.013
K 0.903 1.10
L
0.45 0.61
M
0.85 0.80
a
0°
8°
All Dimensions in mm
SCHEMATIC DIAGRAM
Maximum Ratings @ TA = 25°C unless otherwise specified
Characteristic
hFE, DC CURRENT GAIN (NORMALIZED)
TYPICAL CURVES - DDTA143ECA
250
200
150
100
Z23S2445M01中文资料(AEROVOX)中文数据手册「EasyDatasheet - 矽搜」
•单和双额定值 - 双额定值
在SuperMet仅
所有SuperMet和ZEMAX电容TM集成•
60000小时使用寿命.
UL认证压敏灭弧删除•
电容稳定性±整个人生3%
电容器从电路在生命尽头.
•自清除金属化聚丙烯薄膜.
• 专利压力灭弧符合UL810
每个电容器填充有环氧化Soybeanoil
要求.
电介液.大豆油已被证明可靠性
所有AEROMET II电容都可以用时间和成本节约
EIA RS-186-3E状态测试要求.
AeroMount系统.触点厂家触点厂家对于需要reycled了解详细信息.
认证证书
EIA RS-186-2E湿度测试要求(TropiCAL条件).
• UL文件号E51176
• CSA文件号058450
• VDE认证可用
电气特性
• 温度范围:-40〜+ 70℃.源自• 电容范围3至80μF.
• 电容公差±10%.
• 电压范围240至480 VAC,60赫兹.
• 损耗因数0.1%以下
@ 60赫兹和25℃.
• 绝缘电阻千M
●μF.
•耐电压.
• 期限至足月1.75×WVAC
• 期限到案2×WVAC + 1KVAC
应用
• 窗式空调 • 单元式空调 • 电动汽车 • 风扇与鼓风机 • Pumps • 洗衣房设备 • 除湿机
注入
P = Supernol(M系列) S = SuperSoy(Z系列)
电压编码 电压第一个两位数
24 = 240 V交流 33 = 330 V交流 37 = 370 V交流 44 = 440 V交流 48 = 480 V交流 60 = 600 Vac
DDTA143ZUA-7-F中文资料
Symbol Min Typ Max
-0.3
-0.3
-0.5
Packaging SOT-323 SOT-323 SOT-323 SOT-323 SOT-323 SOT-323 SOT-323 SOT-323 SOT-323 SOT-323 SOT-323
Shipping 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel
+6 to -30
DDTA143ZUA
VIN
+5 to -30
V
DDTA114YUA
+6 to -40
DDTA114WUA
+10 to -30
DDTA124XUA
+10 to -40
DDTA144VUA
+15 to -40
DDTA144WUA
+10 to -40
Output Current
DDTA113ZUA
Mechanical Data
PDTC143XT中文资料
−
150
°C
−65
+150
°C
元器件交易网
Philips Semiconductors
NPN resistor-equipped transistor
Product specification
PDTC143XT
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
Rth j-a
thermal resistance from junction to ambient note 1
Note
1. Refer to SOT23 standard mounting conditions.
VALUE 500
UNIT K/W
CHARACTERISTICS Tamb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
VCBO VCEO VEBO VI
collector-base voltage collector-emitter voltage emitter-base voltage input voltage
positive
negative
IO ICM Ptot Tstg Tj Tamb
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
DDTA114ECA-7-F;DDTA143ECA-7-F;DDTA144ECA-7-F;DDTA124ECA-7-F;DDTA115ECA-7-F;中文规格书,Datasheet资料
PNP PRE-BIASED SMALL SIGNAL SOT23 SURFACE MOUNT TRANSISTORFeatures• Epitaxial Planar Die Construction• Complementary NPN Types Available (DDTC) • Built-In Biasing Resistors, R1 = R2• “Lead Free”, RoHS Compliant (Note 1)• Halogen and Antimony Free "Green" Device (Note 2) • Qualified to AEC-Q101 Standards for High ReliabilityMechanical Data• Case: SOT23 • Case material: Molded Plastic. “Green” Molding Compound. • Classification Rating 94V-0 • Moisture Sensitivity: Level 1 per J-STD-020 • Terminals: Matte Tin Finish • Weight: 0.008 grams (approximate)Part Number R1, R2 (NOM)DDTA123ECA 2.2K Ω DDTA143ECA 4.7K Ω DDTA114ECA 10K Ω DDTA124ECA 22K Ω DDTA144ECA 47K Ω DDTA115ECA 100K ΩOrdering Information (Note 3 & 4)Product Grade Marking Reel size (inches) Tape width (mm)Quantity per reelDDTA123ECA-7-F Commercial P04 7 8 3,000 DDTA143ECA-7-F Commercial P08 7 8 3,000 DDTA114ECA-7-F Commercial P13 7 8 3,000 DDTA114ECAQ-7-F Automotive P13 7 8 3,000 DDTA114ECAQ-13-F Automotive P13 13 8 10,000 DDTA124ECA-7-F Commercial P17 7 8 3,000 DDTA144ECA-7-F Commercial P20 7 8 3,000 DDTA115ECA-7-F Commercial P24 783,000Notes: 1. No purposefully added lead.2. Diodes Inc's "Green" policy can be found on our website at .3. For packaging details, go to our website at .4. Products with Q-suffix are automotive grade. Automotive products are electrical and thermal the same as the commercial, except where specified.Marking InformationDate Code KeyYear 2002 2003 2004 2005 2006 2007 2008 2009 2010 2011 2012 2013 2014 2015 2016 2017Code N P R S T U V W X Y Z A B C D EMonth Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov DecCode 1 2 3 4 5 6 7 8 9 O N DDevice Schematic Top View SOT23XXX = Product Type Marking Code, See Ordering Information YM = Date Code Marking Y = Year (ex: X = 2010) M = Month (ex: 9 = September) 132GND (0)C BIN OUTEEquivalent Inverter CircuitINGND(+)XXX Y MMaximum Ratings @T A = 25°C unless otherwise specifiedCharacteristic SymbolValue UnitSupply Voltage <Pin: (3) to (2)> V CC50 VInput Voltage <Pin: (1) to (2)> DDTA123ECADDTA143ECADDTA114ECADDTA124ECADDTA144ECADDTA115ECAV IN+10 to –12+10 to –30+10 to –40+10 to –40+10 to –40+10 to –40VOutput Current DDTA123ECADDTA143ECADDTA114ECADDTA124ECADDTA144ECADDTA115ECAI O-100-100-50-30-30-20mAOutput Current I C (Max) -100 mAThermal Characteristics @T A = 25°C unless otherwise specifiedCharacteristic SymbolValue UnitPower Dissipation (Note 5 & 6) P D200 mW Thermal Resistance, Junction to Ambient Air (Note 5) RθJA625 °C/W Operating and Storage Temperature Range T J, T STG-55 to +150 °CNotes: 5. Mounted on FR4 PC Board with minimum recommended pad layout6. 150mW per element must not be exceeded.Electrical Characteristics@T A = 25°C unless otherwise specifiedCharacteristic SymbolMinTypMaxUnitTestConditionInput Voltage V l(off)-0.5 -1.1 ⎯VV CC = -5V, I O = -100μAV l(on)⎯-1.9 -3V O = -0.3V, I O = -20mA, DDTA123ECAV O = -0.3V, I O = -20mA, DDTA143ECAV O = -0.3V, I O = -10mA, DDTA114ECAV O = -0.3V, I O = -5mA, DDTA124ECAV O = -0.3V, I O = -2mA, DDTA144ECAV O = -0.3V, I O = -1mA, DDTA115ECAOutput Voltage V O(on)⎯-0.1 -0.3 V I O/I l = -10mA/-0.5mA DDTA123ECA I O/I l = -10mA/-0.5mA DDTA143ECA I O/I l = -10mA/-0.5mA DDTA114ECA I O/I l = -10mA/-0.5mA DDTA124ECA I O/I l = -10mA/-0.5mA DDTA144ECA I O/I l = -5mA/-0.25mA DDTA115ECAInput Current DDTA123ECADDTA143ECADDTA114ECADDTA124ECADDTA144ECADDTA115ECAI l⎯⎯-3.8-1.8-0.88-0.36-0.18-0.15mA V I = -5VOutput Current I O(off)⎯⎯-0.5 μA V CC = -50V, V I = 0VDC Current Gain DDTA123ECADDTA143ECADDTA114ECADDTA124ECADDTA144ECADDTA115ECAG l202030566882⎯⎯⎯V O = -5V, I O = -20mAV O = -5V, I O = -10mAV O = -5V, I O = -5mAV O = -5V, I O = -5mAV O = -5V, I O = -5mAV O = -5V, I O = -5mAInput Resistor Tolerance ΔR1-30 ⎯+30 % ⎯Resistance Ratio Tolerance ΔR2/R10.8 1 1.2 % ⎯Gain-Bandwidth Product f T⎯250 ⎯MHz V CE = -10V, I E = -5mA,f = 100MHzTypical Characteristics – DDTA143ECA-5050100150250200150501000T , AMBIENT TEMPERATURE (C)Fig. 1 Derating CurveA °P , P O W E R D I S S I P A T I O N (m W )d 0.0010.010.111020304050V , C O L L E C T O R E M I T T E R V O L T A G E (V )C E (S A T )I , COLLECTOR CURRENT (mA)Fig. 2 V vs. IC CE(SAT) C101,0001001110100h , D C C U R R E N T G A I NF E I , COLLECTOR CURRENT (mA)Fig. 3 DC Current GainC0246102030C , C A P A C I T A N C E (p F )O B V , REVERSE BIAS VOLTAGE (V)Fig. 4 Output CapacitanceR 12105152580.010.111010012348910I , C O L L E C T O R C U R R E N T (m A )C V , INPUT VOLTAGE (V)Fig. 5 Collector Current vs. Input Voltage in 56701101020304050I , COLLECTOR CURRENT (mA)Fig. 6 Input Voltage vs. Collector CurrentC V , I N P U T V O L T A G E (V )i nPackage Outline DimensionsSuggested Pad LayoutSOT23Dim Min Max Typ A 0.37 0.51 0.40 B 1.20 1.40 1.30 C 2.30 2.50 2.40 D 0.89 1.03 0.915 F 0.45 0.60 0.535 G 1.78 2.05 1.83 H 2.80 3.00 2.90 J 0.0130.10 0.05 K 0.903 1.10 1.00 K1 - - 0.400 L 0.45 0.61 0.55 M 0.0850.18 0.11α0° 8°- All Dimensions in mmDimensions Value (in mm)Z2.9 X 0.8 Y 0.9 C 2.0 E 1.35X EYCZIMPORTANT NOTICEDIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages.Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks.LIFE SUPPORTDiodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:A. Life support devices or systems are devices or systems which:1. are intended to implant into the body, or2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in thelabeling can be reasonably expected to result in significant injury to the user.B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness.Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.Copyright © 2011, Diodes Incorporated分销商库存信息:DIODESDDTA114ECA-7-F DDTA143ECA-7-F DDTA144ECA-7-F DDTA124ECA-7-F DDTA115ECA-7-F DDTA123ECA-7-F DDTA124ECA-7DDTA144ECA-7DDTA115ECA-7 DDTA123ECA-7DDTA114ECA-7DDTA143ECA-7。
DTC143TEB中文资料
TransistorsDTC143TEB1/2100mA / 50V Digital transistors (with built-in resistors)DTC143TEBz Applicationsz Dimensions (Unit : mm)Inverter, Interface, Driverz Features1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit).2) The bias resistors consist of thin-film resistors with complete isolation to allow negative biasing of the input. They also have the advantage of almost completely eliminating parasitic effects. 3) Only the on/off conditions need to be set for operation, making the device design easy.z Structurez Equivalent circuitNPN silicon epitaxial planar transistor type 1(Resistor built-in)z Packaging specificationsDTC143TEBPart No.TL EMT3F3000Package Packaging type Taping CodeBasic ordering unit (pieces)z Absolute maximum ratings (T a=25°C)∗1 Each terminal mounted on a recommended landTransistorsDTC143TEB2/2z Electrical characteristics (T a=25°C)ParameterSymbol BV CBO BV CEO BV EBO I CBO I EBO h FE V CE(sat)Rf T Min.50505−−100−3.5−−−−−−250−4.7250−−−5005006001505.9−−V I C =50µA I C =1mA I E =50µA V CB =50V V EB =4VV CE =5V, I C =1mAI C /I B =5mA/0.25mA V CE =10V, I E =−5mA, f =100MHz∗V V nA nA −mV k ΩMHz Typ.Max.Unit ConditionsCollector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off currentDC current gain Collector-emitter saturation voltage Inputa resistanceTransition frequency ∗ Characteristics of built-in transistorz Electrical characteristic curvesD C C U R RE N T G A I N : hF ECOLLECTOR CURRENT : I C (A)Fig.1 DC current gain vs.collector currentC O L L E C T O R S A T U R A T I O N V O L T A G E : V C E (s a t ) (V )COLLECTOR CURRENT : I C (A)Fig.2 Collector-emitter saturationvoltage vs. collector currentAppendix1-Rev2.0Thank you for your accessing to ROHM product informations.More detail product informations and catalogs are available, please contact your nearest sales office.ROHM Customer Support SystemTHE AMERICAS / EUPOPE / ASIA / JAPANContact us : webmaster@rohm.co.jpAppendix。
PDTA143ET中文资料
This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications.
1
3
2
MGA893 - 1
Fig.2 Equivalent inverter symbol.
MARKING
TYPE NUMBER
PDTA143ET
MARKING CODE(1)
∗01
Note
1. ∗ = p : Made in Hong Kong. ∗ = t : Made in Malaysia.
SYMBOL
PARAMETER
CONDITIONS
VCBO VCEO VEBO VI
IO ICM Ptot Tstg Tj Tamb
collector-base voltage collector-emitter voltage emitter-base voltage input voltage
positive negative output current (DC) peak collector current total power dissipation storage temperature junction temperature operating ambient temperature
(1) (2)
(3)
−1
handbook, halfpage
SOT143-00-C002-KG中文资料
R1 (W) 500.0 10.0K 900.0 500.0 200.0
R2 (W) 50.0K 10.0K 100.0 48.0K 40.0K
R1 (W) 10.0K 900.0 1.0K
R2 (W) 10.0K 100.0 10.0K
R3 (W) 10.0K 9.0K 10.0K
Welwyn Components reserves the right to make changes in product specification without notice or liability. All information is subject to Welwyn’s own data and is considered accurate at time of going to print.
© Welwyn Components Limited Bedlington, Northumberland NE22 7AA, UK
A subsidiary of TT electronics plc SOT143 Series Issue June 2006
Telephone: +44 (0) 1670 822181 • Facsimile: +44 (0) 1670 829465 • Email: info@ • Website:
% Of Rated Power
50
10
25°
70°
125°
Temperature in °C
Physical Data (mm)
2.92 ± 0.1 0.1 max 1.0 ±0.1 0.56 ±0.05
4
DTC143XCA中文资料
DTC143XE/DTC143XUA/DTC143XKA DTC143XCA/TC143XSA
Elektronische Bauelemente
NPN Digital Transistors (Built-in Resistors)
FEATURES
* Built-in bias resistors enable the configuration of an inverter circuit without connecting input resistors (see equivalent circuit). * Only the on/off confitions need to be set for operation, making device design easy. * The bias resistors consis of thin-film resistors with compete isolation to allow negative biasing of the input. They also have the advantage of almost completely eliminating parasitic effects.
Symbol VCC VIN IO IC(MAX) Pd Tj Tstg
Symbol VI(off) VI(on) VO(on) II IO(off) GI R1 R2/R1 fT 30 3.29 1.7 2.5 Min.
Limits (DTC143X ) E UA CA 50 -7~+20 100 100 150 200 150 -55~150
0.1
0.3 1.8 0.5
Typical Characteristics
HD14013中文资料
Hitachi CodeJEDECEIAJWeight (reference value)DP-14ConformsConforms0.97 gUnit: mm元器件交易网Hitachi CodeJEDECEIAJWeight (reference value)FP-14DA —Conforms 0.23 g*Dimension including the plating thickness Base material dimension° – 8°Hitachi CodeJEDEC EIAJWeight (reference value)FP-14DN Conforms Conforms 0.13 g° – 8°*Pd platingCautions1.Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,copyright, trademark, or other intellectual property rights for information contained in this document.Hitachi bears no responsibility for problems that may arise with third party’s rights, includingintellectual property rights, in connection with use of the information contained in this document.2.Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use.3.Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,contact Hitachi’s sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,traffic, safety equipment or medical equipment for life support.4.Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installationconditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product.5.This product is not designed to be radiation resistant.6.No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi.7.Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor products.Hitachi, Ltd.Semiconductor & Integrated Circuits.Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan.Hitachi Asia Pte. Ltd.16 Collyer Quay #20-00Hitachi TowerSingapore 049318Tel: 535-2100Fax: 535-1533URLNorthAmerica : http:/Europe : /hel/ecg Asia (Singapore): .sg/grp3/sicd/index.htm Asia (Taiwan): /E/Product/SICD_Frame.htm Asia (HongKong): /eng/bo/grp3/index.htm Japan : http://www.hitachi.co.jp/Sicd/indx.htmHitachi Asia Ltd.Taipei Branch Office3F, Hung Kuo Building. No.167, Tun-Hwa North Road, Taipei (105)Tel: <886> (2) 2718-3666Fax: <886> (2) 2718-8180Hitachi Asia (Hong Kong) Ltd.Group III (Electronic Components)7/F., North Tower, World Finance Centre,Harbour City, Canton Road, Tsim Sha Tsui,Kowloon, Hong Kong Tel: <852> (2) 735 9218Fax: <852> (2) 730 0281 Telex: 40815 HITEC HXHitachi Europe Ltd.Electronic Components Group.Whitebrook ParkLower Cookham Road MaidenheadBerkshire SL6 8YA, United Kingdom Tel: <44> (1628) 585000Fax: <44> (1628) 778322Hitachi Europe GmbHElectronic components Group Dornacher Stra§e 3D-85622 Feldkirchen, Munich GermanyTel: <49> (89) 9 9180-0Fax: <49> (89) 9 29 30 00Hitachi Semiconductor (America) Inc.179 East Tasman Drive,San Jose,CA 95134 Tel: <1> (408) 433-1990Fax: <1>(408) 433-0223For further information write to:。
东芝-DTC143Z-D-数字三极管 (BRT) 的用户手册说明书
MUN2233, MMUN2233L,MUN5233, DTC143ZE,DTC143ZM3, NSBC143ZF3Digital Transistors (BRT)R1 = 4.7 k W , R2 = 47 k WNPN Transistors with Monolithic Bias Resistor NetworkThis series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base−emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space.Features•Simplifies Circuit Design •Reduces Board Space•Reduces Component Count•S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101Qualified and PPAP Capable•These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS CompliantMAXIMUM RATINGS (T A = 25°C)RatingSymbol Max Unit Collector−Base Voltage V CBO 50Vdc Collector−Emitter Voltage V CEO 50Vdc Collector Current − Continuous I C 100mAdc Input Forward Voltage V IN(fwd)30VdcInput Reverse VoltageVIN(rev)5VdcStresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not beassumed, damage may occur and reliability may be affected.PIN 3(OUTPUT)PIN 2EMITTER (GROUND)PIN 1BASE ORDERING INFORMATIONSC−75CASE 463STYLE 1MARKING DIAGRAMSXXX = Specific Device Code M =Date Code*G =Pb−Free Package(Note: Microdot may be in either location)*Date Code orientation may vary depending up-on manufacturing location.SC−59CASE 318DSTYLE 1SOT−23CASE 318STYLE 6SC−70/SOT−323CASE 419STYLE 3SOT−723CASE 631AA STYLE 1SOT−1123CASE 524AA STYLE 1XX M G G 11XXX M GG XX M G G1XX M 1X M 1PIN CONNECTIONSTable 1. ORDERING INFORMATIONDevicePart MarkingPackage Shipping †MUN2233T1G, NSVMUN2233T1G*8K SC−59(Pb−Free)3000 / Tape & Reel MMUN2233LT1G, SMMUN2233LT1G*A8K SOT−23(Pb−Free)3000 / Tape & Reel NSVMMUN2233LT3G*A8K SOT−23(Pb−Free)10000 / Tape & Reel MUN5233T1G, SMUN5233T1G*8K SC−70/SOT−323(Pb−Free)3000 / Tape & Reel DTC143ZET1G, NSVDTC143ZET1G*8K SC−75(Pb−Free)3000 / Tape & Reel DTC143ZM3T5G, NSVDTC143ZM3T5G*8K SOT−723(Pb−Free)8000 / Tape & ReelNSBC143ZF3T5GRSOT−1123(Pb−Free)8000 / Tape & Reel†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.*S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable.Figure 1. Derating CurveAMBIENT TEMPERATURE (°C)P D , P O W E R D I S S I P A T I O N (m W )(1) SC−75 and SC−70/SOT−323; Minimum Pad (2) SC−59; Minimum Pad (3) SOT−23; Minimum Pad(4) SOT−1123; 100 mm 2, 1 oz. copper trace (5) SOT−723; Minimum PadTHERMAL CHARACTERISTICS (SC−59) (MUN2233)Total Device DissipationT A = 25°C(Note 1)(Note 2) Derate above 25°C(Note 1)(Note 2)P D2303381.82.7mWmW/°CThermal Resistance,(Note 1) Junction to Ambient(Note 2)R q JA540370°C/WThermal Resistance,(Note 1) Junction to Lead(Note 2)R q JL264287°C/WJunction and Storage Temperature Range T J, T stg−55 to +150°C THERMAL CHARACTERISTICS (SOT−23) (MMUN2233L)Total Device DissipationT A = 25°C(Note 1)(Note 2) Derate above 25°C(Note 1)(Note 2)P D2464002.03.2mWmW/°CThermal Resistance,(Note 1) Junction to Ambient(Note 2)R q JA508311°C/WThermal Resistance,(Note 1) Junction to Lead(Note 2)R q JL174208°C/WJunction and Storage Temperature Range T J, T stg−55 to +150°C THERMAL CHARACTERISTICS (SC−70/SOT−323) (MUN5233)Total Device DissipationT A = 25°C(Note 1)(Note 2) Derate above 25°C(Note 1)(Note 2)P D2023101.62.5mWmW/°CThermal Resistance,(Note 1) Junction to Ambient(Note 2)R q JA618403°C/WThermal Resistance,(Note 1) Junction to Lead(Note 2)R q JL280332°C/WJunction and Storage Temperature Range T J, T stg−55 to +150°C THERMAL CHARACTERISTICS (SC−75) (DTC143ZE)Total Device DissipationT A = 25°C(Note 1)(Note 2) Derate above 25°C(Note 1)(Note 2)P D2003001.62.4mWmW/°CThermal Resistance,(Note 1) Junction to Ambient(Note 2)R q JA600400°C/WJunction and Storage Temperature Range T J, T stg−55 to +150°C THERMAL CHARACTERISTICS (SOT−723) (DTC143ZM3)Total Device DissipationT A = 25°C(Note 1)(Note 2) Derate above 25°C(Note 1)(Note 2)P D2606002.04.8mWmW/°CThermal Resistance,(Note 1) Junction to Ambient(Note 2)R q JA480205°C/WJunction and Storage Temperature Range T J, T stg−55 to +150°C1.FR−4 @ Minimum Pad.2.FR−*******.0InchPad.3.FR*4 @ 100 mm2, 1 oz. copper traces, still air.4.FR*4 @ 500 mm2, 1 oz. copper traces, still air.THERMAL CHARACTERISTICS (SOT−1123) (NSBC143ZF3)Total Device DissipationT A = 25°C(Note 3)(Note 4) Derate above 25°C(Note 3)(Note 4)P D2542972.02.4mWmW/°CThermal Resistance,(Note 3) Junction to Ambient(Note 4)R q JA493421°C/WThermal Resistance, Junction to Lead(Note 3)R q JL193°C/W Junction and Storage Temperature Range T J, T stg−55 to +150°C1.FR−4 @ Minimum Pad.2.FR−*******.0InchPad.3.FR*4 @ 100 mm2, 1 oz. copper traces, still air.4.FR*4 @ 500 mm2, 1 oz. copper traces, still air.Table 3. ELECTRICAL CHARACTERISTICS (T A = 25°C, unless otherwise noted)Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICSCollector−Base Cutoff Current (V CB = 50 V, I E = 0)I CBO−−100nAdcCollector−Emitter Cutoff Current (V CE = 50 V, I B = 0)I CEO−−500nAdcEmitter−Base Cutoff Current (V EB = 6.0 V, I C = 0)I EBO−−0.18mAdcCollector−Base Breakdown Voltage(I C = 10 m A, I E = 0)V(BR)CBO50−−VdcCollector−Emitter Breakdown Voltage (Note 5)(I C = 2.0 mA, I B = 0)V(BR)CEO50−−VdcON CHARACTERISTICSDC Current Gain (Note 5)(I C = 5.0 mA, V CE = 10 V)h FE80200−Collector *Emitter Saturation Voltage (Note 5)(I C = 10 mA, I B = 1.0 mA)V CE(sat)−−0.25VdcInput Voltage (off)(V CE = 5.0 V, I C = 100 m A)V i(off)−0.60.5VdcInput Voltage (on)(V CE = 0.3 V, I C = 5 mA)V i(on)1.30.9−VdcOutput Voltage (on)(V CC = 5.0 V, V B = 2.5 V, R L = 1.0 k W)V OL−−0.2VdcOutput Voltage (off)(V CC = 5.0 V, V B = 0.5 V, R L = 1.0 k W)V OH4.9−−VdcInput Resistor R1 3.3 4.7 6.1k W Resistor Ratio R1/R20.080.10.12Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions.5.Pulsed Condition: Pulse Width = 300 msec, Duty Cycle v 2%.MUN2233, MMUN2233L, MUN5233, DTC143ZE, DTC143ZM3Figure 2. V CE(sat) versus I CFigure 3. DC Current GainFigure 4. Output Capacitance Figure 5. Output Current versus Input VoltageV in , INPUT VOLTAGE (V)V R , REVERSE BIAS VOLTAGE (V)Figure 6. Input Voltage versus Output CurrentI C , COLLECTOR CURRENT (mA)I C , COLLECTOR CURRENT (mA)IC , COLLECTOR CURRENT (mA)V C E (s a t ), C O L L E C T O R−E M I T T E R S A T U R A T I O N V O L T A G E (V )h F E , D C CU RR E N T G A I N5040302010C o b , C A P A C I T A N C E (p F )I C , C O L L E C T O R C U R R E N T (m A )V i n , I N P U T V O L T A G E (V )10.10.0110003.2014231001010.10.010.0011010.150403020100100102.82.421.61.20.80.40NSBC143ZF3Figure 7. V CE(sat) versus I CFigure 8. DC Current GainFigure 9. Output Capacitance Figure 10. Output Current versus Input VoltageV in , INPUT VOLTAGE (V)V R , REVERSE BIAS VOLTAGE (V)Figure 11. Input Voltage versus Output CurrentI C , COLLECTOR CURRENT (mA)I C , COLLECTOR CURRENT (mA)I C , COLLECTOR CURRENT (mA)V C E (s a t ), C O L L E C T O R −E M I T T E R S A T U R A T I O N V O L T A G E (V )h F E , D C C U R R E N T G A I N5040302010C o b , C A P A C I T A N C E (p F )I C , C O L L E C T O R C U R R E N T (m A )V i n , I N P U T V O L T A G E (V )10.10.0110002.414231001010.10.010.0011005040302010010010121.61.20.80.401010.1SOT −23 (TO −236)CASE 318−08ISSUE ASDATE 30 JAN 2018SCALE 4:11XXXM G G XXX = Specific Device Code M = Date Code G = Pb −Free Package*This information is generic. Please refer to device data sheet for actual part marking.Pb −Free indicator, “G” or microdot “ G ”,may or may not be present.GENERICMARKING DIAGRAM*NOTES:1.DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.2.CONTROLLING DIMENSION: MILLIMETERS.3.MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH.MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF THE BASE MATERIAL.4.DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,PROTRUSIONS, OR GATE BURRS.SOLDERING FOOTPRINTDIM A MIN NOM MAX MINMILLIMETERS0.89 1.00 1.110.035INCHES A10.010.060.100.000b 0.370.440.500.015c 0.080.140.200.003D 2.80 2.90 3.040.110E 1.20 1.30 1.400.047e 1.78 1.90 2.040.070L 0.300.430.550.0120.0390.0440.0020.0040.0170.0200.0060.0080.1140.1200.0510.0550.0750.0800.0170.022NOM MAX L1STYLE 22:PIN 1.RETURN2.OUTPUT3.INPUT STYLE 6:PIN 1.BASE2.EMITTER3.COLLECTOR STYLE 7:PIN 1.EMITTER2.BASE3.COLLECTORSTYLE 8:PIN 1.ANODE2.NO CONNECTION3.CATHODESTYLE 9:PIN 1.ANODE2.ANODE3.CATHODE STYLE 10:PIN 1.DRAIN2.SOURCE3.GATE STYLE 11:PIN 1.ANODE 2.CATHODE 3.CATHODE −ANODE STYLE 12:PIN 1.CATHODE2.CATHODE3.ANODE STYLE 13:PIN 1.SOURCE2.DRAIN3.GATESTYLE 14:PIN 1.CATHODE2.GATE3.ANODESTYLE 15:PIN 1.GATE2.CATHODE3.ANODE STYLE 16:PIN 1.ANODE2.CATHODE3.CATHODE STYLE 17:PIN 1.NO CONNECTION2.ANODE3.CATHODE STYLE 18:PIN 1.NO CONNECTION 2.CATHODE 3.ANODE STYLE 19:PIN 1.CATHODE 2.ANODE 3.CATHODE −ANODE STYLE 23:PIN 1.ANODE2.ANODE3.CATHODESTYLE 20:PIN 1.CATHODE2.ANODE3.GATE STYLE 21:PIN 1.GATE2.SOURCE3.DRAIN STYLE 1 THRU 5:CANCELLEDSTYLE 24:PIN 1.GATE2.DRAIN3.SOURCESTYLE 25:PIN 1.ANODE2.CATHODE3.GATESTYLE 26:PIN 1.CATHODE2.ANODE3.NO CONNECTIONSTYLE 27:PIN 1.CATHODE2.CATHODE3.CATHODE2.10 2.40 2.640.0830.0940.104H E 0.350.540.690.0140.0210.027c0−−−100−−−10T°°°°END VIEWDIMENSIONS: MILLIMETERS3X3XRECOMMENDED STYLE 28:PIN 1.ANODE2.ANODE3.ANODESC −59CASE 318D −04ISSUE HDATE 28 JUN 2012SCALE 2:1STYLE 3:PIN 1.ANODE2.ANODE3.CATHODESTYLE 1:PIN 1.BASE2.EMITTER3.COLLECTORSTYLE 2:PIN 1.ANODE2.N.C.3.CATHODESTYLE 4:PIN 1.CATHODE2.N.C.3.ANODE STYLE 5:PIN 1.CATHODE2.CATHODE3.ANODE STYLE 6:PIN 1.ANODE2.CATHODE3.ANODE/CATHODENOTES:1.DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.2.CONTROLLING DIMENSION: MILLIMETER.ǒmm inchesǓXXX M GG XXX = Specific Device Code M = Date CodeG= Pb −Free Package*GENERICMARKING DIAGRAM*This information is generic. Please refer todevice data sheet for actual part marking.Pb −Free indicator, “G” or microdot “ G ”,may or may not be present.1*For additional information on our Pb −Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.SOLDERING FOOTPRINT*DIM A MIN NOM MAX MINMILLIMETERS1.00 1.15 1.300.039INCHES A10.010.060.100.001b 0.350.430.500.014c 0.090.140.180.003D2.70 2.903.100.106E 1.30 1.50 1.700.051e 1.70 1.90 2.100.067L 0.200.400.600.0082.502.803.000.0990.0450.0510.0020.0040.0170.0200.0050.0070.1140.1220.0590.0670.0750.0830.0160.0240.1100.118NOM MAX H E(*Note: Microdot may be in either location)SC −70 (SOT −323)CASE 419ISSUE PDATE 07 OCT 2021SCALE 4:1STYLE 3:PIN 1.BASE2.EMITTER3.COLLECTOR STYLE 4:PIN 1.CATHODE2.CATHODE3.ANODE STYLE 2:PIN 1.ANODE2.N.C.3.CATHODE STYLE 1:CANCELLEDSTYLE 5:PIN 1.ANODE 2.ANODE 3.CATHODE STYLE 6:PIN 1.EMITTER 2.BASE3.COLLECTORSTYLE 7:PIN 1.BASE 2.EMITTER 3.COLLECTORSTYLE 8:PIN 1.GATE 2.SOURCE 3.DRAINSTYLE 9:PIN 1.ANODE 2.CATHODE3.CATHODE-ANODESTYLE 10:PIN 1.CATHODE 2.ANODE3.ANODE-CATHODEXX M G G XX = Specific Device Code M = Date CodeG= Pb −Free PackageGENERICMARKING DIAGRAM1STYLE 11:PIN 1.CATHODE2.CATHODE3.CATHODE*This information is generic. Please refer to device data sheet for actual part marking.Pb −Free indicator, “G” or microdot “G ”, may or may not be present. Some products maynot follow the Generic Marking.SC −75/SOT −416CASE 463−01ISSUE GDATE 07 AUG 2015SCALE 4:1NOTES:1.DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.2.CONTROLLING DIMENSION: MILLIMETER.STYLE 1:PIN 1.BASE2.EMITTER3.COLLECTOR STYLE 2:PIN 1.ANODE2.N/C3.CATHODE STYLE 3:PIN 1.ANODE2.ANODE3.CATHODESTYLE 4:PIN 1.CATHODE2.CATHODE3.ANODEXX = Specific Device Code M = Date Code G = Pb −Free PackageSTYLE 5:PIN 1.GATE2.SOURCE3.DRAINDIM MIN NOM MAX MILLIMETERS A 0.700.800.90A10.000.050.10b C 0.100.150.25D 1.55 1.60 1.65E e 1.00 BSC 0.0270.0310.0350.0000.0020.0040.0040.0060.0100.0610.0630.0650.04 BSCMIN NOM MAX INCHES0.150.200.300.0060.0080.012*This information is generic. Please refer to device data sheet for actual part marking.Pb −Free indicator, “G” or microdot “ G ”,may or may not be present.GENERICMARKING DIAGRAM*H EL 0.100.150.201.50 1.60 1.700.0040.0060.0080.0600.0630.0670.700.800.900.0270.0310.035ǒmm inchesǓSCALE 10:1*For additional information on our Pb −Free strategy and solderingdetails, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.SOLDERING FOOTPRINT*SOT −1123CASE 524AA ISSUE CDATE 29 NOV 2011SCALE 8:1NOTES:1.DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.2.CONTROLLING DIMENSION: MILLIMETERS.3.MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL.4.DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS.GENERICMARKING DIAGRAM*X = Specific Device Code M= Date Code*This information is generic. Please refer to device data sheet for actual part marking.Pb −Free indicator, “G” or microdot “ G ”,may or may not be present.DIM MIN MAXMILLIMETERS A 0.340.40b 0.150.28c 0.070.17D 0.750.85E 0.550.650.95 1.05L 0.185 REF H E cA*For additional information on our Pb −Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.SOLDERING FOOTPRINT*X Me b10.100.20STYLE 1:PIN 1.BASE2.EMITTER3.COLLECTOR STYLE 2:PIN 1.ANODE2.N/C3.CATHODE STYLE 3:PIN 1.ANODE2.ANODE3.CATHODE STYLE 4:PIN 1.CATHODE2.CATHODE3.ANODE STYLE 5:PIN 1.GATE2.SOURCE3.DRAIN0.350.40TOP VIEWSIDE VIEWBOTTOM VIEW DIMENSIONS: MILLIMETERS0.26OUTLINEL20.050.15SOT −723CASE 631AA −01ISSUE DDATE 10 AUG 2009DIMMIN NOM MAX MILLIMETERS A 0.450.500.55b 0.150.210.27b10.250.310.37C 0.070.120.17D 1.15 1.20 1.25E 0.750.800.85e 0.40 BSC H 1.15 1.20 1.25L E NOTES:1.DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.2.CONTROLLING DIMENSION: MILLIMETERS.3.MAXIMUM LEAD THICKNESS INCLUDES LEADFINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL.4.DIMENSIONS D AND E DO NOT INCLUDE MOLDFLASH, PROTRUSIONS OR GATE BURRS.eLXX = Specific Device Code M= Date CodeGENERICMARKING DIAGRAM*SCALE 4:1XX M STYLE 1:PIN 1.BASE2.EMITTER3.COLLECTOR STYLE 2:PIN 1.ANODE2.N/C3.CATHODESTYLE 3:PIN 1.ANODE2.ANODE3.CATHODESTYLE 4:PIN 1.CATHODE2.CATHODE3.ANODE1*This information is generic. Please refer to device data sheet for actual part marking. Pb −Free indicator, “G”, may or not be present.*For additional information on our Pb −Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.SOLDERING FOOTPRINT*STYLE 5:PIN 1.GATE2.SOURCE3.DRAINL20.150.200.250.29 REF 3X3X2XBOTTOM VIEWSIDE VIEWRECOMMENDEDDIMENSIONS: MILLIMETERS3XPUBLICATION ORDERING INFORMATIONTECHNICAL SUPPORTLITERATURE FULFILLMENT:。
DTC143TM3T5G资料
∞ቤተ መጻሕፍቲ ባይዱ
DTC123EM3T5G DTC143EM3T5G
8H 8J
2.2
2.2
SOT−723
4.7
4.7
(Pb−Free)
8000/Tape & Reel
DTC143ZM3T5G*
8K
4.7
47
DTC124XM3T5G*
8L
22
47
DTC123JM3T5G
8M
2.2
47
DTC115EM3T5G
8N
100
Device DTC114EM3T5G
Marking 8A
R1 (K) 10
R2 (K) 10
Package
Shipping†
DTC124EM3T5G
8B
22
22
DTC144EM3T5G
8C
47
47
DTC114YM3T5G
8D
10
47
DTC114TM3T5G
8E
10
∞
DTC143TM3T5G
8F
4.7
DTC114TM3T5G
160
350
−
DTC143TM3T5G
160
350
−
DTC123EM3T5G
8.0
15
−
DTC143EM3T5G
15
30
−
DTC143ZM3T5G
80
200
−
DTC124XM3T5G
80
150
−
DTC123JM3T5G
80
140
−
DTC115EM3T5G
80
150
盖米阀1435中文手册
盖⽶阀1435中⽂⼿册1 安装使⽤说明请仔细地阅读下⾯的注意事项,并且严格遵守其中的每⼀条指令。
1.1 总则只有下⾯的所有条件都被满⾜的情况下,定位器的正确操作才可完成*在所有条件适合的情况下,运输和储存必须是通过正当⽅法进⾏*只有受过正规培训的⼯程师才可以执⾏安装和试车的过程*必须按照正常的指令操作*坚持正常维修维护应遵守以下的原则*操作指令的内容*安装和电器设备等操作的相关的安全条例*此装置不允许安装在有爆炸危险的区域此本操作说明书中提到的条例、标准、准则和指令都符合德国标准,如果(盖⽶)Gemue ePos 1435定位器被⽤于其他国家,则在那些国家申请的条例和规则都必须被遵守。
1.2符号和⽂字的说明在操作指令中,通过下列符号来识别重要信息:这个序号代表危险。
如果在这⾥给出的指令没有被执⾏,则⼤量的原材料危害会发⽣,并对⼈体的健康及⽣命带来危险。
如果给出的与这个符号有关的安全条例没有被遵守,那么对⾝体的轻微的损伤及原材料的危害都会发⽣。
这个符号表明,操作说明书将给出关于您所使⽤的ePos 1435 定位器的重要信息。
1.3关于电、⽓使⽤的安全条例只有获得资格证书和受过正规培训的员⼯才可以装配,连接和调试(盖⽶)Gemue 定位器的电、⽓连接。
为确保电源装置的⽤电安全,这些是必需的。
按下⾯的要求: (1) 24伏直流电源24VDC(2) 为安装提供0/4-20毫安的模拟输出值或是0-10伏的模拟输出值确保供电值正确。
安装及调试⽓动头时应遵守安全守则.,由于⽓动头⾥弹簧⼒很⾼,以免造成⼈体损伤。
1.4使⽤规则(盖⽶)Gemue的ePos 1435是⼀个智能型的电⽓式定位器,它是安装在线性和回转式的⽓动头上。
本定位器可以使⽤合适的安装件直接安装在⽓动头上。
成套⼯具包括固定⽀架、接管、相应的位置传感器和安装螺杆。
对于远程控制来说,安装也是可能的。
既然这样,就不需要安装⽀架和接管。
1.5安装和连接的⼯具*8mm, 10mm, 27mm的扳⼿*3mm和4mm的六⾓扳⼿( Allan键)*3.5mm的螺丝起⼦2 制造商的信息2.1(1) 收到后⽴刻检查装置是否正确和未损坏(参考发运单)(2)使⽤定购编号,核查并确保产品的型号及数量是同定购的相⼀致。
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Transistors DTA143ZKA / DTA143ZSA
Rev.A 1/3
-100mA / -50V Digital transistors (with built-in resistors)
DTA143ZM / DTA143ZE / DTA143ZUA / DTA143ZKA / DTA143ZSA
z Applications
Inverter, Interface, Driver
z Features
1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit).
2) The bias resistors consist of thin-film resistors with complete isolation to allow positive biasing of the input. They also have the advantage of almost completely eliminating parasitic effects.
3) Only the on/off conditions need to be set for operation, making the device design easy .
z Structure
PNP epitaxial planar silicon transistor (Resistor built-in type)
z External dimensions (Unit : mm)
Transistors DTA143ZKA / DTA143ZSA
Rev.A 2/3
z Packaging
TL UMT3
EMT3
SMT3
SPT
DTA143ZE DTA143ZM Part No.DTA143ZUA 3000T2L VMT3
8000
T1063000T1463000TP 5000DTA143ZKA DTA143ZSA
−−−−
−−−
−
−
−−−
−−−
−
−−−−
Package Packaging type Taping Taping Taping Taping Taping Code
Basic ordering
unit (pieces)
12
z Absolute maximum ratings (T a=25°C)
Limits
Parameter
Symbol V CC 150
200
300
−50−30 to +5−100−100
150−55 to +150DTA143ZE DTA143ZM DTA143ZUA DTA143ZKA DTA143ZSA
V V mA mW °C °C
V IN I O I C(Max.)P D Tj Tstg
Unit Supply voltage Input voltage Output current Power dissipation Junction temperature Storage temperature
z Electrical characteristics (T a=25°C)
Parameter
Symbol V I(off)V I(on)V O(on)I I I O(off)R 1G I R 2/R 1f T Min.−−1.3−−−3.29808−
−−−0.1−−4.7−10250
−0.5−−0.3−1.8−0.56.11−12−
V V CC =−5V, I O =−100µA V O =−0.3V, I O =−5mA I O /I I =−5mA/−0.25mA V I =−5V
V CC =−50V, V I =0V V O =−5V, I O =−10mA
V CE =−10V, I E =5mA, f =100MHz
∗
V mA µA k Ω−−−
−MHz
Typ.Max.Unit Conditions
Input voltage Output voltage Input current Output current Input resistance DC current gain Resistance ratio Transition frequency
∗ Characteristics of built-in transistor
Transistors DTA143ZKA / DTA143ZSA
Rev.A
z Electrical characteristic curves
I N P U T V O L T A G E : V I (o n ) (V )
OUTPUT CURRENT : I O (A)
−
−−−−−−−−−−Fig.1 Input voltage vs. output current
(ON characteristics)
−−1−−−−200−500−100−20−50−10−2−5INPUT VOLTAGE : V I(off) (V)
O U T P U T C U R R E N T : I o (A
)
Fig.2 Output current vs. input voltage
(OFF characteristics)
−D C C U R R E N T G A I N : G I
OUTPUT CURRENT : I O (A)
Fig.3 DC current gain vs. output
current
−−−−−−−−−−−OUTPUT CURRENT : I O (A)
O U T P U T V O L T A G E : V O (o n ) (V )
Fig.4 Output voltage vs. output
current
3/3
Appendix
About Export Control Order in Japan
Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export T rade Control
Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
Appendix1-Rev1.1。