2BZX84C16A中文资料 - 360文档中心

BZX84J-B15中文资料

[1]
1
2
Symbol
1
2
006aaa152
元器件交易网
NXP Semiconductors
BZX84J series
Single Zener diodes
3. Ordering information
4. Marking
Table 3. Ordering information
SB
Type number
BZX84J-B15 BZX84J-B16 BZX84J-B18 BZX84J-B20 BZX84J-B22 BZX84J-B24 BZX84J-B27 BZX84J-B30 BZX84J-B33 BZX84J-B36 BZX84J-B39 BZX84J-B43 BZX84J-B47 BZX84J-B51 BZX84J-B56 BZX84J-B62 BZX84J-B68 BZX84J-B75 -
2.2
2.6
2V7
B
2.65 2.75
C
2.5
2.9
3V0
B
2.94 3.06
C
2.8
3.2
3V3
B
3.23 3.37
C
3.1
3.5
3V6
B
3.53 3.67
C
3.4
3.8
3V9
B
3.82 3.98
C
3.7
4.1
4V3
B
4.21 4.39
C
4
4.6
4V7
B
4.61 4.79
C
4.4
5
5V1
B
5
5.2
C
10.4 11.6

BZX84C16LT1G中文资料

BZX84B4V7LT1,BZX84C2V4LT1 Series Zener Voltage Regulators225 mW SOT−23 Surface MountThis series of Zener diodes is offered in the convenient, surface mount plastic SOT−23 package. These devices are designed to provide voltage regulation with minimum space requirement. They are well suited for applications such as cellular phones, hand held portables,and high density PC boards.Features•Pb−Free Packages are Available•225 mW Rating on FR−4 or FR−5 Board•Zener Breakdown V oltage Range − 2.4 V to 75 V•Package Designed for Optimal Automated Board Assembly •Small Package Size for High Density Applications•ESD Rating of Class 3 (>16 KV) per Human Body Model •Tight Tolerance Series Available (See Page 4)Mechanical CharacteristicsCASE: V oid-free, transfer-molded, thermosetting plastic case FINISH: Corrosion resistant finish, easily SolderableMAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES:260°C for 10 SecondsPOLARITY: Cathode indicated by polarity band FLAMMABILITY RATING: UL 94 V−0MAXIMUM RATINGSMaximum ratings are those values beyond which device damage can occur.Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected.1.FR−5 = 1.0 X 0.75 X 0.62 in.2.Alumina = 0.4 X 0.3 X 0.024 in., 99.5% alumina.See specific marking information in the device marking column of the Electrical Characteristics table on page 3 of this data sheet.DEVICE MARKING INFORMATION(Pinout: 1-Anode, 2-No Connection, 3-Cathode)(T A = 25°Cunless otherwise noted, V F = 0.95 V Max. @ I F = 10 mA)ELECTRICAL CHARACTERISTICS − BZX84CxxxLT1 SERIES (STANDARD TOLERANCE) (Pinout: 1-Anode, 2-No Connection, 3-Cathode)(T A = 25°C unless otherwise noted, V F = 0.90 V Max. @ I F = 10 mA) (Devices listed in bold, italic are ON Semiconductor Preferred devices.)Z*The “G” suffix indicates Pb−Free package available.ELECTRICAL CHARACTERISTICS − BZX84BxxxL (Tight Tolerance Series)(Pinout: 1-Anode, 2-No Connection, 3-Cathode)(T A = 25°C unless otherwise noted, V F = 0.90 V Max. @ I F = 10 mA)Z*The “G” suffix indicates Pb−Free package available.V Z , T E M P E R A T U R E C O E F F I C I E N T (m V /C )°θV Z , NOMINAL ZENER VOLTAGE (V)− 3− 2012345678Figure 1. Temperature Coefficients (Temperature Range −55°C to +150°C)V Z , T E M P E R A T U R E C O E F F I C I E N T (m V /C )°θ100101V Z , NOMINAL ZENER VOLTAGE (V)Figure 2. Temperature Coefficients (Temperature Range −55°C to +150°C)V Z , NOMINAL ZENER VOLTAGEFigure 3. Effect of Zener Voltage onZener ImpedanceZ Z T , D Y N A M I C I M P E D A N C E ()Ω1000100101V F , FORWARD VOLTAGE (V)Figure 4. Typical Forward VoltageI F , F O R W A R D C U R R E N T (m A )1000100101C , C A P A C I T A N C E (p F )V Z , NOMINAL ZENER VOLTAGE (V)Figure 5. Typical Capacitance 1000100101V Z , ZENER VOLTAGE (V)1001010.10.01I Z , Z E N ER C U R R E N T (m A )V Z , ZENER VOLTAGE (V)1001010.10.01I R , L E A K A G E C U R R E N T (A )µV Z , NOMINAL ZENER VOLTAGE (V)Figure 6. Typical Leakage Current10001001010.10.010.0010.00010.00001I Z , Z E N E R C U R R E N T (m A )Figure 7. Zener Voltage versus Zener Current(V Z Up to 12 V)Figure 8. Zener Voltage versus Zener Current(12 V to 91 V)PACKAGE DIMENSIONSSOT−23TO−236AB CASE 318−09ISSUE AK*For additional information on our Pb−Free strategy and solderingdetails, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.SOLDERING FOOTPRINT*ǒmm inchesǓSCALE 10:1ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.PUBLICATION ORDERING INFORMATION。

BZX84C6V2-7-F中文资料

Lead-freeBZX84C2V4 - BZX84C39350mW SURFACE MOUNT ZENER DIODEFeatures·Planar Die Construction ·350mW Power Dissipation ·Zener Voltages from 2.4V - 39V·Ideally Suited for Automated Assembly Processes ·Lead Free/RoHS Compliant (Note 4)·Qualified to AEC-Q101 Standards for High ReliabilityMechanical DataNotes: 1. Device mounted on FR-4 PC board with recommended pad layout, which can be found on our website at/datasheets/ap02001.pdf.2. Short duration test pulse used to minimize self-heating effect.3. Valid provided the terminals are kept at ambient temperature.4. No purposefully added lead.Maximum Ratings@ T A = 25°C unless otherwise specified·Case: SOT-23·Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0·Moisture Sensitivity: Level 1 per J-STD-020C ·Terminals: Solderable per MIL-STD-202, Method 208·Lead Free Plating (Matte Tin Finish annealed over Alloy 42 leadframe). ·Polarity: See Diagram·Marking: Marking Code & Date Code (See Page 4)·Weight: 0.008 grams (approximate)Electrical Characteristics @ T A = 25°C unless otherwise specifiedNotes: 5. Short duration test pulse used to minimize self-heating effect.6. f = 1KHz.102030405012345678910I , Z E N E R C U R R E N T (m A )Z V , ZENER VOLTAGE (V)Z Fig. 2 Zener Breakdown CharacteristicsC , T O T A L C A P A C I T A N C E (p F )T 101001000V , NOMINAL ZENER VOLTAGE (V)Z Fig. 4 Total Capacitance vs Nominal Zener Voltage400T , Ambient Temperature, (°C)A Fig. 1 Power Derating CurveP , P O W E R D I S S I P A T I O N (m W )d 200100300050001002000102030I , Z E N E R C U R R E N T (m A )Z V , ZENER VOLTAGE (V)ZFig. 3 Zener Breakdown Characteristics10203040Notes: 7. For Packaging Details, go to our website at /datasheets/ap02007.pdf.Ordering Information(Note 7)Date Code KeyXXX = Product Type Marking Code (See Page 2)YM = Date Code Marking Y = Year ex: N = 2002M = Month ex: 9 = SeptemberXXXY MMarking Information* Add “-7-F” to the appropriate type number in Table 1 (on Page 2). Example: 6.2V Zener = BZX84C6V2-7-F.IMPORTANT NOTICEDiodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages.LIFE SUPPORTDiodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the President of Diodes Incorporated.。

贴片稳压二极管代号与普通型号元件封装对照表

Y字头-贴片稳压二极管贴片元件标示代码查询表示符号实际元件生产厂结构封装类型参数及代换型号Y0s CGY121B Sie GaAs MMICY1 BZX84-C11 Phi C SOT230.3W zener 11V±5%Y1p BZX84-C11 Phi C SOT230.3W zener 11V±5%Y1 BZV49C11 Zet O SOT891W zener 11V ±5%Y2 CLY2 Sie DR MW6 3GHz GaAsfet 0.25W 3GHz Y2 BZX84-C12 Phi C SOT230.3W zener 12V±5%Y3 BZX84-C13 Phi C SOT230.3W zener 13V±5%Y4 BZX84-C15 Phi C SOT230.3W zener 15V±5%Y4 BZV49C15 Zet O SOT891W zener 15V ±5%Y5s CGY59 Sie DS SOT363 GaAs 0.9/1.8GHz preamp Y5 BZX84-C16 Phi C SOT230.3W zener 16V±5%Y5 BZV49C16 Zet O SOT891W zener 16V ±5%Y6s CGY62 Sie DS MW6 GaAs MMICY6 BZX84-C18 Phi C SOT230.3W zener 18V±5%Y7 CGY60 Sie DS MW6 GaAs preamp MMIC 1.8GHz Y7 BZX84-C20 Phi C SOT230.3W zener 20V±5%Y8 CGY120 Sie MW6 GaAs MMICY8 BZX84-C22 Phi C SOT230.3W zener 22V±5%Y8 BZV49C22 Zet O SOT891W zener 22V ±5%Y9s CGY121A Sie MW6 GaAs MMICY9 BZX84-C24 Phi C SOT230.3W zener 24V±5%Y9 BZV49C24 Zet O SOT891W zener 124V ±5%Y10 BZX84-C27 Phi C SOT230.3W zener 27V±5%Y11 BZX84-C30 Phi C SOT230.3W zener 30V±5%Y12 BZX84-C33 Phi C SOT230.3W zener 33V±5%Y13 BZX84-C36 Phi C SOT230.3W zener 36V±5%Y14 BZX84-C39 Phi C SOT230.3W zener 39V±5%Y15 BZX84-C43 Phi C SOT230.3W zener 43V±5%Y16 BZX84-C47 Phi C SOT230.3W zener 47V±5%Y17 BZX84-C51 Phi C SOT230.3W zener 51V±5%Y18 BZX84-C56 Phi C SOT230.3W zener 56V±5%Y19 BZX84-C62 Phi C SOT230.3W zener 62V±5%Y36 BZX84-C13V6 Phi C SOT230.3W zener 13.6V±5% Y50 BZX84-A2V4 Phi C SOT230.3W zener 2.4V ±1% Y51 BZX84-A2V7 Phi C SOT230.3W zener 2.7V ±1% Y52 BZX84-A3V0 Phi C SOT230.3W zener 3.0V ±1% Y53 BZX84-A3V3 Phi C SOT230.3W zener 3.3V ±1% Y54 BZX84-A3V6 Phi C SOT230.3W zener 3.6V ±1% Y55 BZX84-A3V9 Phi C SOT230.3W zener 3.9V ±1% Y56 BZX84-A4V3 Phi C SOT230.3W zener 4.3V ±1% Y57 BZX84-A4V7 Phi C SOT230.3W zener 4.7V ±1% Y58 BZX84-A5V1 Phi C SOT230.3W zener 5.1V ±1% Y59 BZX84-A5V6 Phi C SOT230.3W zener 5.6V ±1% Y60 BZX84-A6V2 Phi C SOT230.3W zener 6.2V ±1% Y61 BZX84-A6V8 Phi C SOT230.3W zener 6.8V ±1% Y62 BZX84-A7V5 Phi C SOT230.3W zener 7.5V ±1% Y63 BZX84-A8V2 Phi C SOT230.3W zener 8.2V ±1% Y64 BZX84-A9V1 Phi C SOT230.3W zener 9.1V ±1% Y65 BZX84-A10 Phi C SOT230.3W zener 10V ±1% Y66 BZX84-A11 Phi C SOT230.3W zener 11V ±1% Y67 BZX84-A12 Phi C SOT230.3W zener 12V ±1% Y68 BZX84-A13 Phi C SOT230.3W zener 13V ±1% Y69 BZX84-A15 Phi C SOT230.3W zener 15V ±1% Y70 BZX84-A16 Phi C SOT230.3W zener 16V ±1% Y71 BZX84-A18 Phi C SOT230.3W zener 18V ±1% Y72 BZX84-A20 Phi C SOT230.3W zener 20V ±1% Y73 BZX84-A22 Phi C SOT230.3W zener 22V ±1% Y74 BZX84-A24 Phi C SOT230.3W zener 24V ±1% Y75 BZX84-A27 Phi C SOT230.3W zener 27V ±1% Y76 BZX84-A30 Phi C SOT230.3W zener 30V ±1% Y77 BZX84-A33 Phi C SOT230.3W zener 33V ±1% Y78 BZX84-A36 Phi C SOT230.3W zener 36V ±1% Y79 BZX84-A39 Phi C SOT230.3W zener 39V ±1% Y80 BZX84-A43 Phi C SOT230.3W zener 43V ±1% Y81 BZX84-A47 Phi C SOT230.3W zener 47V ±1% Y82 BZX84-A51 Phi C SOT230.3W zener 51V ±1% Y83 BZX84-A56 Phi C SOT230.3W zener 56V ±1% Y84 BZX84-A62 Phi C SOT230.3W zener 62V ±1% Y85 BZX84-A68 Phi C SOT230.3W zener 68V ±1% Y86 BZX84-A75 Phi C SOT230.3W zener 75V ±1% YBs BSS84 Inf M SOT23p-ch mosfet 50V 0.13AYP BZX284-C2V7 Phi I SOD110 0.4W zener 2.7V E12 ±5% YQ BZX284-C3V0 Phi I SOD110 0.4W zener 3.0V E12 ±5% YR MSD601R Mot N SOT346 npn gp 25VYR BZX284-C3V3 Phi I SOD110 0.4W zener 3.3V E12 ±5% YS MSD601S Mot N SOT346 npn gp 25VYS BZX284-C3V6 Phi I SOD110 0.4W zener 3.6V E12 ±5% YT BZX284-C3V9 Phi I SOD110 0.4W zener 3.9V E12 ±5% YU BZX284-C4V3 Phi I SOD110 0.4W zener 4.3V E12 ±5% YV BZX284-C4V7 Phi I SOD110 0.4W zener 4.7V E12 ±5% YW BZX284-C5V1 Phi I SOD110 0.4W zener 5.1V E12 ±5% YX BZX284-C5V6 Phi I SOD110 0.4W zener 5.6V E12 ±5% YY BZX284-C6V2 Phi I SOD110 0.4W zener 6.2V E12 ±5% 补充：元器件标示代号封装形式实际元件型号制造工厂替换型号Y 2 SOD-523 BB182B PH2 SOD-523 HSMP-282Y AVY*4 QFN-4 HMPP-3893 AVY0S 6 MW-6 CGY121B IF3 SOT-23BZX84C11 NS SM ZE BZX79C11 Y13 SOT-89 BZV49C11 ZE BZV85C11 Y1** 3 SOT-23TC1273-5ENB MIY10 3 SOT-23BZX84C27 NS TH VAL BZX79C27 Y11 3 SOT-23BZX84C30 NS TH VAL BZX79C303 SC-59 2SA1464Y12 NEY123 SC-70 2SA1608Y12 NE3 SOT-23BZX84C33 NS TH VAL BZX79C333 SC-59 2SA1464Y13 NEY133 SC-70 2SA1608Y13 NE3 SOT-23BZX84C36 TH VAL BZX79C363 SC-59 2SA1464Y14 NEY143 SC-70 2SA1608Y14 NE3 SOT-23BZX84C39 TH VAL BZX79C393 SC-59 NTM2907AY15 2N2907A Y153 SOT-23BZX84C43 TH BZX79C43 Y16 3 SOT-23BZX84C47 TH VAL BZX79C47 Y17 3 SOT-23BZX84C51 TH VAL BZX79C51 Y18 3 SOT-23BZX84C56 TH VAL BZX79C56Y1p 3 SOT-23BZX84C11 PH BZX79C11 Y1t 3 SOT-23BZX84-C11 PHY1W 3 SOT-23BZX84-C11 PH3 SOT-23BZX84C12 NS SM ZE BZX79C12 Y26 MW-6 CLY2 IFY2** 3 SOT-23TC1273-10ENB MIY20 3 SOT-23BZX84C68 TH VAL BZX79C68 Y21 3 SOT-23BZX84C75 TH VAL BZX79C75 Y22 3 SC-59 2SA1461Y22 NEY23 3 SC-59 2SA1461Y23 NEY24 3 SC-59 2SA1461Y24 NEY25 3 SC-59 NTM3906Y25 2N3906Y2p 3 SOT-23BZX84C12 PH BZX79C12 Y2t 3 SOT-23BZX84-C12 PHY2W 3 SOT-23BZX84-C12 PHY3 3 SOT-23BZX84C13 NS SM ZE BZX79C13 Y3** 3 SOT-23TC1273-15ENB MI3 SC-59 2SA1462Y33 NEY333 SC-70 2SA1610Y33 NE3 SC-59 2SA1462Y34 NEY343 SC-70 2SA1610Y34 NEY36 3 SOT-23BZX84C13V6 ZEY3p 3 SOT-23BZX84C13 PH BZX79C13 Y3t 3 SOT-23BZX84-C13 PH3 SC-75 KA4A4Z NEY43 SOT-23BZX84C15 NS SM ZE BZX79C153 SOT-89 BZV49C15 ZE BZV85C15 Y4p 3 SOT-23BZX84C15 PH BZX79C15 Y4t 3 SOT-23BZX84-C15 PHY4W 3 SOT-23BZX84-C15 PH3 SOT-23BZX84C16 NS SM ZE BZX79C16 Y53 SOT-89 BZV49C16 ZE BZV85C16 Y50 3 SOT-23BZX84-A2V4 PHY51 3 SOT-23BZX84-A2V7 PHY52 3 SOT-23BZX84-A3V0 PHY53 3 SOT-23BZX84-A3V3 PHY55 3 SOT-23BZX84-A3V9 PHY56 3 SOT-23BZX84-A4V3 PHY57 3 SOT-23BZX84-A4V7 PHY58 3 SOT-23BZX84-A5V1 PHY59 3 SOT-23BZX84-A5V6 PHY5p 3 SOT-23BZX84C16 PH BZX79C16 Y5s 6 SOT-363 CGY59W IFY5t 3 SOT-23BZX84-C16 PHY5W 3 SOT-23BZX84-C16 PH3 SOT-23BZX84C18 NS SM ZE BZX79C18 Y66 MW-6 CGY120 SMY60 3 SOT-23BZX84-A6V2 PHY61 3 SOT-23BZX84-A6V8 PHY62 3 SOT-23BZX84-A7V5 PHY63 3 SOT-23BZX84-A8V2 PHY64 3 SOT-23BZX84-A9V1 PHY65 3 SOT-23BZX84-A10 PHY66 3 SOT-23BZX84-A11 PHY67 3 SOT-23BZX84-A12 PHY68 3 SOT-23BZX84-A13 PHY69 3 SOT-23BZX84-A15 PHY6p 3 SOT-23BZX84C18 PH BZX79C18 Y6s 6 MW-6 CGY62 IFY6t 3 SOT-23BZX84-C18 PHY6W 3 SOT-23BZX84-C18 PH3 SC-75 KN4A4Z NEY73 SOT-23BZX84C20 NS SM ZE BZX79C20 Y70 3 SOT-23BZX84-A16 PHY71 3 SOT-23BZX84-A18 PHY72 3 SOT-23BZX84-A20 PHY73 3 SOT-23BZX84-A22 PHY74 3 SOT-23BZX84-A24 PHY75 3 SOT-23BZX84-A27 PHY76 3 SOT-23BZX84-A30 PHY77 3 SOT-23BZX84-A33 PHY78 3 SOT-23BZX84-A36 PHY7p 3 SOT-23BZX84C20 PH BZX79C20 Y7s 6 MW-6 CGY60 IFY7t 3 SOT-23BZX84-C20 PHY7W 3 SOT-23BZX84-C20 PH3 SOT-23BZX84C22 NS SM ZE BZX79C22 Y83 SOT-89 BZV49C22 ZE BZV85C22 Y80 3 SOT-23BZX84-A43 PHY81 3 SOT-23BZX84-A47 PHY82 3 SOT-23BZX84-A51 PHY83 3 SOT-23BZX84-A56 PHY84 3 SOT-23BZX84-A62 PHY85 3 SOT-23BZX84-A68 PHY86 3 SOT-23BZX84-A75 PHY8p 3 SOT-23BZX84C22 PH BZX79C22 Y8t 3 SOT-23BZX84-C22 PHY8W 3 SOT-23BZX84-C22 PH3 SOT-23BZX84C24 NS SM ZE BZX79C24 Y93 SOT-89 BZV49C24 ZE BZV85C24 Y9p 3 SOT-23BZX84C24 PH BZX79C24 Y9S 6 MW-6 CGY121A IFY9t 3 SOT-23BZX84-C24 PHY9W 3 SOT-23BZX84-C24 PH3 SOT-23BCW61RA TFK BC558A YA6 SC-88 µPA679TB NEYAs 3 SOT-23BSS83P IF3 SOT-23BCW61RB TFK BC558B YB3 SOT-89 2SK680A NEYBs 3 SOT-23BSS84P IFYC 3 SOT-23BCW61RC TFK BC558B YD 3 SOT-23BCW61RD TFK BC558C YG 3 SOT-23BCX71RG TFK BC557A YH 3 SOT-23BCX71RH TFK BC557B YJ 3 SOT-23BCX71RJ TFK BC557B3 SOT-23BCX71RK TFK BC557C YK3 SOT-89 2SB1115YK NEYL 3 SOT-89 2SB1115YL NEYO 2 SOD-110 BZX284-C2V4 PH2 SOD-110 BZX284-C2V7 PH YP3 SOT-89 2SB1115AYP NE2 SOD-110 BZX284-C3V0 PH YQ3 SC-75 2PA1774Q PH3 SOT-89 2SB1115AYQ NE2 SOD-110 BZX284-C3V3 PH YR3 SC-75 2PA1774R PH2 SOD-110 BZX284-C3V6 PH YS3 SC-75 2PA1774S PH YT 2 SOD-110 BZX284-C3V9 PH YU 2 SOD-110 BZX284-C4V3 PH YV 2 SOD-110 BZX284-C4V7 PH YW 2 SOD-110 BZX284-C5V1 PH YX 2 SOD-110 BZX284-C5V6 PH YY 2 SOD-110 BZX284-C6V2 PH YZ 2 SOD-110 BZX284-C6V8 PH。

BZX84C16V中文资料

SILIICON PLANAR VOLTAGE REGULATOR DIODEBZX84C2V4 to 75V SOT-23Formed SMD PackageLow voltage general purpose voltage regulator diode ABSOLUTE MAXIMUM RATINGS (T a =25°C)UNIT %Repetitive Peak Forward Current mA Repetitive Peak Working Current mA mW mW °C °CTHERMAL RESISTANCE K/W* Device mounted on a ceramic alumna** Device mounted on an FR5 printed circuit boardELECTRICAL CHARACTERISTICS (T a =25°C unless specified otherwise) Device Temperature DifferentialI R at V RMarkingCoefficient ResistanceS Z (mV/K)rdiff (Ω)µAat I Z test=5mA at I Z test=1mAmin max min max max Max (V)BZX84C2V4 2.20 2.60 -3.560050 1.0Z11BZX84C2V72.50 2.90 -3.560020 1.0Z12BZX84C3V0 2.80 3.20 -3.560010 1.0Z13BZX84C3V3 3.10 3.50 -3.5600 5.0 1.0Z14BZX84C3V6 3.40 3.80 -3.5600 5.0 1.0Z15BZX84C3V9 3.70 4.10-3.56003.0 1.0Z16BZX84C4V34.00 4.60 -3.5600 3.0 1.0Z17BZX84C4V7 4.40 5.00 -3.5 0.2500 3.0 2.0Z1BZX84C5V1 4.80 5.40 -2.7 1.2480 2.0 2.0Z2BZX84C5V6 5.20 6.00 -2.0 2.5400 1.0 2.0Z3BZX84C6V2 5.80 6.60 0.4 3.7150 3.0 4.0Z4BZX84C6V8 6.407.20 1.2 4.580 2.0 4.0Z5BZX84C7V57.007.90 2.5 5.380 1.0 5.0Z6BZX84C8V27.708.70 3.2 6.2800.7 5.0Z7BZX84C9V18.509.60 3.8 7.01000.5 6.0Z8BZX84C109.4010.604.5 8.01500.27.0Z9BZX84C2V4_75V Rev_060506E*** Pulse Test 20ms < tp < 50ms1515152060401015909090801001009595 + 5VALUE max I ZRM Storage Temperature T stg Junction to Ambient*R th (j-a)DESCRIPTIONI FRM Working Voltage Tolerance Power Dissipation upto T a =25ºC SYMBOL *P D ***V Z ( + 5%)(V)at I Z test=5mA Resistance rdiff (Ω)at I Z test=5mA250420300- 65 to +150250Forward Voltage at V F <0.9V at 10mA and <1.5V at 200mAVoltage 150250Differential Working Power Dissipation upto T c =25ºC **P D Junction Temperature T j Pin Configuration1 = A N ODE2 = N C3 =CATHODE12Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanySILIICON PLANAR VOLTAGE REGULATOR DIODEBZX84C2V4 to 75V SOT-23Formed SMD PackageELECTRICAL CHARACTERISTICS (T a =25°C unless specified otherwise) Device Temperature DifferentialI R at V RMarkingCoefficientResistanceS Z (mV/K)rdiff (Ω)µAat I Z test=5mAat I Z test=1mA min max min max max Max (V)BZX84C1110.4011.60 5.4 9.01500.18Y1BZX84C1211.4012.70 6.0 101500.18Y2BZX84C1312.4014.10 7.0 111700.18Y3BZX84C1513.8015.60 9.2 132000.0510.5Y4BZX84C1615.3017.10 10.4 142000.0511.2Y5BZX84C1816.8019.10 12.4 162250.0512.6Y6BZX84C2018.8021.20 14.4 182250.0514.0Y7BZX84C2220.8023.30 16.4 202500.0515.4Y8BZX84C2422.8025.60 18.4 222500.0516.8Y9at I Z Test=2mA at I Z Test=0.5mABZX84C2725.1028.90 21.4 25.33000.0518.9Y10BZX84C3028.0032.00 24.4 29.43000.0521.0Y11BZX84C3331.0035.00 27.4 33.43250.0523.1Y12BZX84C3634.0038.00 30.4 37.43500.0525.2Y13BZX84C3937.0041.00 33.4 41.23500.0527.3Y14BZX84C4340.0046.00 37.6 46.63750.0530.1Y15BZX84C4744.0050.00 42.0 51.83750.0532.9Y16BZX84C5148.0054.00 46.6 57.24000.0535.7Y17BZX84C5652.0060.00 52.2 63.84250.0539.2Y18BZX84C6258.0066.00 58.8 71.64500.0543.4Y19BZX84C6864.0072.00 65.6 79.84750.0547.6Y20BZX84C7570.0079.0073.4 88.65000.0552.5Y21BZX84C2V4_75V Rev_060506E*** Pulse Test 20ms < tp < 50ms2002152402551301501701808080908025303070at I Z test=5mA at I Z test=5mA max at I Z test=2mAat I Z Test=2mA4045555520Resistance ***V Z ( + 5%)rdiff (Ω)(V)Forward Voltage at V F <0.9V at 10mA and <1.5V at 200mAWorking Differential Voltage Pin Configuration1 = A N ODE2 = N C3 =CATHODE12BZX84C2V4 to 75V SOT-23Formed SMD PackageSOT-23 Package Reel InformationReel specification for W" Packing (13" reel)BZX84C2V4_75V Rev_060506ESOT-23 Formed SMD PackageTape Specification for SOT-23 Surface Mount DeviceS O T -23 T &R3K /reel 10K /reel136 g m /3K p c s 415 g m /10K p c s3" x 7.5" x 7.5"9" x 9" x 9"13" x 13" x 0.5"12 K 51 K 10 K17" x 15" x 13.5"19" x 19" x 19"17" x 15" x 13.5"192 K 408 K 300 K12 k g s 28 k g s 16 k g sPACKAGEN e t W e i g h t /Q t y DetailsS T A N D A R D PACKI N N E R C A R T O N B O XQ t y O U T E R C A R T O N B O XQ t y G r W t SizeSizePacking Detail±0.0114.47.9 – 10.9T R A I L E RF I X I N GT A P EL E A D E R9.2±0.5MAXNOTES:No. of Devices8mm Tape Size of Reel 330 mm (13")10,000 Pcs 8mm Tape Size of Reel 180 mm (7")3,000 Pcs1.The bandolier of 330 mm reel contains at least 10,000 devices.2.The bandolier of 180 mm reel contains at least 3,000 devices.3.No more than 0.5% missing devices / reel. 50 empty compartments for 330 mm reel.15 empty compartments for 180 mm reel.4.Three consecutive empty places might be found provided this gap is followed by 6 consecutive devices.5.The carrier tape (leader) starts with at least 75 empty positions (equivalent to 330 mm).In order to fix the carrier tape a self adhesive tape of 20 to 50 mm is applied. At the end of the bandolier at least 40 empty positions (equivalent to 160 mm) are there.3.15Customer Notes BZX84C2V4 to 75VSOT-23Formed SMD Package1. CDIL Semiconductor Devices are RoHS compliant, customers are requested to pleasedispose as per prevailing Environmental Legislation of their Country.2. In Europe, please dispose as per EU Directive 2002/96/EC on Waste Electrical andElectronic Equipment (WEEE).BZX84C2V4_75V Rev_060506E DisclaimerThe product information and the selection guides facilitate selection of the CDIL's Semiconductor Device(s)best suited for application in your product(s)as per your requirement.It is recommended that you completely review our Data Sheet(s)so as to confirm that the Device(s)meet functionality parameters for your application.The information furnished in the Data Sheet and on the CDIL Web Site/CD are believed to be accurate and reliable.CDIL however,does not assume responsibility for inaccuracies or incomplete information.Furthermore,CDIL does not assume liability whatsoever,arising out of the application or use of any CDIL product;neither does it convey any license under its patent rights nor rights of others. These products are not designed for use in life saving/support appliances or systems.CDIL customers selling these products(either as individual Semiconductor Devices or incorporated in their end products),in any life saving/support appliances or systems or applications do so at their own risk and CDIL will not be responsible for any damages resulting from such sale(s).CDIL strives for continuous improvement and reserves the right to change the specifications of its products without prior notice.CDIL is a registered Trademark ofContinental Device India LimitedC-120 Naraina Industrial Area, New Delhi 110 028, India.Telephone + 91-11-2579 6150, 4141 1112 Fax + 91-11-2579 5290, 4141 1119email@ 。

BZX84J中文资料

1.Product proﬁle1.1General descriptionGeneral-purpose Zener diodes in a SOD323F (SC-90) very small and ﬂat lead Surface-Mounted Device (SMD) plastic package.1.2Features1.3ApplicationsI General regulation functions1.4Quick reference data[1]Pulse test: t p ≤300µs;δ≤0.02.[2]t p =100µs; square wave; T j =25°C prior to surge2.Pinning information[1]The marking bar indicates the cathode.BZX84J seriesSingle Zener diodesRev. 01 — 1 March 2007Product data sheetI Non-repetitive peak reverse power dissipation:≤40WI Wide working voltage range: nominal 2.4V to 75V (E24range)I Total power dissipation:≤550mW I Low differential resistanceI Two tolerance series:±2%and ±5%I Small plastic package suitable for surface-mounted designTable 1.Quick reference data Symbol Parameter Conditions Min Typ Max Unit V F forward voltageI F =100mA[1]-- 1.1V P ZSMnon-repetitive peak reverse power dissipation[2]--40WTable 2.PinningPin Description Simpliﬁed outlineSymbol1cathode [1]2anode21006aaa152213.Ordering information[1]The series consists of 74types with nominal working voltages from 2.4V to 75V .4.MarkingTable 3.Ordering informationType numberPackage NameDescriptionVersion BZX84J-B2V4 to BZX84J-C75[1]SC-90plastic surface-mounted package; 2leadsSOD323FTable 4.Marking codesType number Marking code Type number Marking code Type number Marking code Type number Marking code BZX84J-B2V4SL BZX84J-B15SC BZX84J-C2V4U3BZX84J-C15TV BZX84J-B2V7SM BZX84J-B16SD BZX84J-C2V7U4BZX84J-C16TW BZX84J-B3V0ST BZX84J-B18SE BZX84J-C3V0U9BZX84J-C18TX BZX84J-B3V3SU BZX84J-B20SF BZX84J-C3V3UA BZX84J-C20TY BZX84J-B3V6SV BZX84J-B22SG BZX84J-C3V6UB BZX84J-C22TZ BZX84J-B3V9SW BZX84J-B24SH BZX84J-C3V9UC BZX84J-C24U1BZX84J-B4V3SZ BZX84J-B27SK BZX84J-C4V3UF BZX84J-C27U2BZX84J-B4V7T A BZX84J-B30SN BZX84J-C4V7UG BZX84J-C30U5BZX84J-B5V1TD BZX84J-B33SP BZX84J-C5V1UL BZX84J-C33U6BZX84J-B5V6TE BZX84J-B36SR BZX84J-C5V6UM BZX84J-C36U7BZX84J-B6V2TH BZX84J-B39SS BZX84J-C6V2UR BZX84J-C39U8BZX84J-B6V8TK BZX84J-B43SX BZX84J-C6V8US BZX84J-C43UD BZX84J-B7V5TM BZX84J-B47SY BZX84J-C7V5UU BZX84J-C47UE BZX84J-B8V2TN BZX84J-B51TB BZX84J-C8V2UV BZX84J-C51UH BZX84J-B9V1TP BZX84J-B56TC BZX84J-C9V1UW BZX84J-C56UK BZX84J-B10S8BZX84J-B62TF BZX84J-C10TR BZX84J-C62UN BZX84J-B11S9BZX84J-B68TG BZX84J-C11TS BZX84J-C68UP BZX84J-B12SA BZX84J-B75TL BZX84J-C12TT BZX84J-C75UT BZX84J-B13SB--BZX84J-C13TU--5.Limiting values[1]t p =100µs; square wave; T j =25°C prior to surge[2]Device mounted on an FR4Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for cathode 1cm 2.6.Thermal characteristics[1]Device mounted on an FR4PCB, single-sided copper, tin-plated, mounting pad for cathode 1cm 2.[2]Soldering point of cathode tab.7.Characteristics[1]Pulse test: t p ≤300µs;δ≤0.02.Table 5.Limiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134).Symbol Parameter Conditions Min Max Unit I F forward current-250mAI ZSMnon-repetitive peak reverse current[1]-see Table 8and 9P ZSM non-repetitive peak reverse power dissipation [1]-40W P tot total power dissipation T amb ≤25°C[2]-550mW T j junction temperature -150°C T amb ambient temperature −65+150°C T stgstorage temperature−65+150°CTable 6.Thermal characteristics Symbol ParameterConditions Min Typ Max Unit R th(j-a)thermal resistance from junction to ambient in free air[1]--230K/W R th(j-sp)thermal resistance from junction to solder point[2]--55K/WTable 7.CharacteristicsT j =25°C unless otherwise speciﬁed.Symbol Parameter ConditionsMin Typ Max Unit V Fforward voltage[1]I F =10mA --0.9V I F =100mA--1.1VTable 8.Characteristics per type; BZX84J-B2V4 to BZX84J-C24 T j=25°C unless otherwise speciﬁed.BZX84J -xxx Sel WorkingvoltageV Z(V)Differentialresistancer dif(Ω)ReversecurrentI R(µA)TemperaturecoefﬁcientS Z(mV/K)DiodecapacitanceC d(pF)[1]Non-repetitivepeak reversecurrentI ZSM(A)[2]I Z=5mA I Z=1mA I Z=5mA I Z=5mAMin Max Max Max Max V R(V)Min Max Max Max2V4B 2.35 2.45400100501−3.5045012C 2.2 2.62V7B 2.65 2.75450100201−3.5044012C 2.5 2.93V0B 2.94 3.0650095101−3.5042512C 2.8 3.23V3B 3.23 3.375009551−3.5041012C 3.1 3.53V6B 3.53 3.675009051−3.5039012C 3.4 3.83V9B 3.82 3.985009031−3.5037012C 3.7 4.14V3B 4.21 4.396009031−3.5035012 C4 4.64V7B 4.61 4.795008032−3.50.232512C 4.455V1B5 5.24806022−2.7 1.230012C 4.8 5.45V6B 5.49 5.714004012−2 2.527512C 5.266V2B 6.08 6.3215010340.4 3.725012C 5.8 6.66V8B 6.66 6.94801524 1.2 4.521512C 6.47.27V5B7.357.65801015 2.5 5.31704 C77.98V2B8.048.3680100.75 3.2 6.21504 C7.78.79V1B8.929.28100100.56 3.871203 C8.59.610B9.810.2150100.27 4.581103 C9.410.611B10.811.2150100.18 5.49108 2.5 C10.411.612B11.812.2150100.18610105 2.5 C11.412.7[1]f =1MHz; V R =0V[2]t p =100µs; square wave; T j =25°C prior to surge13B 12.713.3170100.18711103 2.5C 12.414.115B 14.715.3200150.0510.59.213992C 13.815.616B 15.716.3200200.0511.210.41497 1.5C 15.317.118B 17.618.4225200.0512.612.41693 1.5C 16.819.120B 19.620.4225200.051414.41888 1.5C 18.821.222B 21.622.4250250.0515.416.42084 1.25C 20.823.324B 23.524.5250300.0516.818.422801.25C22.825.6Table 8.Characteristics per type; BZX84J-B2V4 to BZX84J-C24 …continued T j =25°C unless otherwise speciﬁed.BZX84J -xxxSel Working voltage V Z (V)Differential resistance r dif (Ω)Reverse current I R (µA)Temperature coefﬁcient S Z (mV/K)Diode capacitance C d(pF)[1]Non-repetitive peak reversecurrent I ZSM (A)[2]I Z =5mA I Z =1mA I Z =5mA I Z =5mAMinMax Max Max Max V R (V)Min Max Max Max[1]f =1MHz; V R =0V[2]t p =100µs; square wave; T j =25°C prior to surgeTable 9.Characteristics per type; BZX84J-B27 to BZX84J-C75T j =25°C unless otherwise speciﬁed.BZX84J-xxxSel Working voltage V Z (V)Differential resistance r dif (Ω)Reverse current I R (µA)Temperature coefﬁcient S Z (mV/K)Diode capacitance C d(pF)[1]Non-repetitive peak reversecurrent I ZSM (A)[2]I Z =2mA I Z =0.5mA I Z =2mA I Z =2mAMinMax Max Max Max V R (V)Min Max Max Max 27B 26.527.5250400.0518.921.425.3731C 25.128.930B 29.430.6250400.052124.429.4661C 283233B 32.333.7275400.0523.127.433.4600.9C 313536B 35.336.7300600.0525.230.437.4590.8C 343839B 38.239.8300750.0527.333.441.2580.7C 374143B 42.143.9325800.0530.137.646.6560.6C 404647B 46.147.9325900.0532.94251.8550.5C 445051B 50523501100.0535.746.657.2520.4C 485456B 54.957.13751200.0539.252.263.8490.3C 526062B 60.863.24001400.0543.458.871.6440.3C 586668B 66.669.44001600.0547.665.679.8400.25C 647275B 73.576.54001750.0552.573.488.6350.2C7079(1)T j =25°C (prior to surge)(2)T j =150°C (prior to surge)T j =25°CFig 1.Non-repetitive peak reverse power dissipationas a function of pulse duration; maximum valuesFig 2.Forward current as a function of forwardvoltage; typical valuesBZX84J-B/C2V4 to BZX84J-B/C4V7T j =25°C to 150°CBZX84J-B/C5V1 to BZX84J-B/C15T j =25°C to 150°CFig 3.Temperature coefﬁcient as a function ofworking current; typical values Fig 4.Temperature coefﬁcient as a function ofworking current; typical valuesmbg8011031t p (ms)P ZSM (W)1010210−1101(1)(2)V F (V)0.610.8mbg781100200300I F (mA)0I Z (mA)10−1102101mld444−1−0.5−1.50.5S Z (mV/K)−22V44V74V33V93V63V33V02V7mld4454812S Z (mV/K)−4I Z (mA)10−110210115131211109V15V65V18V27V56V86V2T j =25°CBZX84J-B/C2V7 to BZX84J-B/C8V2All curves have a test current I Z =5mA.T j =25°CBZX84J-B/C10 to BZX84J-B/C36For the curves V Z(nom)=(10, 12, 15, 18, 22)V the test current I Z =5mA.For the curves V Z(nom)=(27, 33, 36)V the test current I Z =2mA.Fig 5.Working current as a function of workingvoltage; typical values Fig 6.Working current as a function of workingvoltage; typical valuesV Z (V)0108462006aaa9962030104050I Z (mA)V Z(nom) (V) = 2.73.33.94.75.66.88.2V Z (V)040301020006aaa99710203051525I Z(mA)0V Z(nom) (V) = 10363327221812158.Package outline9.Packing information[1]For further information and the availability of packing methods, see Section 13.10.SolderingFig 7.Package outline SOD323F (SC-90)04-09-13Dimensions in mm0.800.650.250.100.50.32.72.3 1.81.60.400.251.351.1512Table 10.Packing methodsThe indicated -xxx are the last three digits of the 12NC ordering code.[1]Type numberPackageDescriptionPacking quantity 300010000BZX84J-B2V4to BZX84J-C75SOD323F 4mm pitch, 8mm tape and reel-115-135Reﬂow soldering is the only recommended soldering method.Dimensions in mmFig 8.Reﬂow soldering footprint SOD323F (SC-90)msa4331.650.50(2×)2.101.602.800.603.050.500.95solder lands solder resistoccupied area solder paste11.Revision historyTable 11.Revision historyDocument ID Release date Data sheet status Change notice Supersedes BZX84J_SER_120070301Product data sheet--BZX84J_SER_1© NXP B.V . 2007. All rights reserved.Product data sheet Rev. 01 — 1 March 200711 of 1212.Legal information12.1Data sheet status[1]Please consult the most recently issued document before initiating or completing a design.[2]The term ‘short data sheet’ is explained in section “Deﬁnitions”.[3]The product status of device(s)described in this document may have changed since this document was published and may differ in case of multiple devices.The latest product status information is available on the Internet at URL .12.2DeﬁnitionsDraft —The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modiﬁcations or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness ofinformation included herein and shall have no liability for the consequences of use of such information.Short data sheet —A short data sheet is an extract from a full data sheet with the same product type number(s)and title.A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales ofﬁce. In case of any inconsistency or conﬂict with the short data sheet, the full data sheet shall prevail.12.3DisclaimersGeneral —Information in this document is believed to be accurate andreliable.However,NXP Semiconductors does not give any representations or warranties,expressed or implied,as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information.Right to make changes —NXP Semiconductors reserves the right to make changes to information published in this document, including withoutlimitation speciﬁcations and product descriptions, at any time and without notice.This document supersedes and replaces all information supplied prior to the publication hereof.Suitability for use —NXP Semiconductors products are not designed,authorized or warranted to be suitable for use in medical, military, aircraft,space or life support equipment, nor in applications where failure ormalfunction of a NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage.NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk.Applications —Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the speciﬁed use without further testing or modiﬁcation.Limiting values —Stress above one or more limiting values (as deﬁned in the Absolute Maximum Ratings System of IEC 60134)may cause permanent damage to the device.Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in theCharacteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability.Terms and conditions of sale —NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale,as published at /proﬁle/terms , including those pertaining to warranty,intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conﬂict between information in this document and such terms and conditions, the latter will prevail.No offer to sell or license —Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant,conveyance or implication of any license under any copyrights,patents or other industrial or intellectual property rights.12.4TrademarksNotice:All referenced brands,product names,service names and trademarks are the property of their respective owners.13.Contact informationFor additional information, please visit:For sales ofﬁce addresses, send an email to:salesaddresses@Document status [1][2]Product status [3]DeﬁnitionObjective [short] data sheet Development This document contains data from the objective speciﬁcation for product development.Preliminary [short] data sheet Qualiﬁcation This document contains data from the preliminary speciﬁcation.Product [short] data sheetProductionThis document contains the product speciﬁcation.14.Contents1Product proﬁle. . . . . . . . . . . . . . . . . . . . . . . . . . 11.1General description. . . . . . . . . . . . . . . . . . . . . . 11.2Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11.3Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 11.4Quick reference data. . . . . . . . . . . . . . . . . . . . . 12Pinning information. . . . . . . . . . . . . . . . . . . . . . 13Ordering information. . . . . . . . . . . . . . . . . . . . . 24Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 36Thermal characteristics. . . . . . . . . . . . . . . . . . . 37Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 38Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 99Packing information. . . . . . . . . . . . . . . . . . . . . . 910Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 911Revision history. . . . . . . . . . . . . . . . . . . . . . . . 1012Legal information. . . . . . . . . . . . . . . . . . . . . . . 1112.1Data sheet status . . . . . . . . . . . . . . . . . . . . . . 1112.2Deﬁnitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 1112.3Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 1112.4T rademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 1113Contact information. . . . . . . . . . . . . . . . . . . . . 1114Contents. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12Please be aware that important notices concerning this document and the product(s)described herein, have been included in section ‘Legal information’.© NXP B.V.2007.All rights reserved.For more information, please visit: For sales office addresses, please send an email to: salesaddresses@Date of release: 1 March 2007Document identifier: BZX84J_SER_1。

BZX84C3V3LT1G中文资料

BZX84B4V7LT1,BZX84C2V4LT1 Series Zener Voltage Regulators225 mW SOT−23 Surface MountThis series of Zener diodes is offered in the convenient, surface mount plastic SOT−23 package. These devices are designed to provide voltage regulation with minimum space requirement. They are well suited for applications such as cellular phones, hand held portables,and high density PC boards.Features•Pb−Free Packages are Available•225 mW Rating on FR−4 or FR−5 Board•Zener Breakdown V oltage Range − 2.4 V to 75 V•Package Designed for Optimal Automated Board Assembly •Small Package Size for High Density Applications•ESD Rating of Class 3 (>16 KV) per Human Body Model •Tight Tolerance Series Available (See Page 4)Mechanical CharacteristicsCASE: V oid-free, transfer-molded, thermosetting plastic case FINISH: Corrosion resistant finish, easily SolderableMAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES:260°C for 10 SecondsPOLARITY: Cathode indicated by polarity band FLAMMABILITY RATING: UL 94 V−0MAXIMUM RATINGSMaximum ratings are those values beyond which device damage can occur.Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected.1.FR−5 = 1.0 X 0.75 X 0.62 in.2.Alumina = 0.4 X 0.3 X 0.024 in., 99.5% alumina.See specific marking information in the device marking column of the Electrical Characteristics table on page 3 of this data sheet.DEVICE MARKING INFORMATION(Pinout: 1-Anode, 2-No Connection, 3-Cathode)(T A = 25°Cunless otherwise noted, V F = 0.95 V Max. @ I F = 10 mA)ELECTRICAL CHARACTERISTICS − BZX84CxxxLT1 SERIES (STANDARD TOLERANCE) (Pinout: 1-Anode, 2-No Connection, 3-Cathode)(T A = 25°C unless otherwise noted, V F = 0.90 V Max. @ I F = 10 mA) (Devices listed in bold, italic are ON Semiconductor Preferred devices.)Z*The “G” suffix indicates Pb−Free package available.ELECTRICAL CHARACTERISTICS − BZX84BxxxL (Tight Tolerance Series)(Pinout: 1-Anode, 2-No Connection, 3-Cathode)(T A = 25°C unless otherwise noted, V F = 0.90 V Max. @ I F = 10 mA)Z*The “G” suffix indicates Pb−Free package available.V Z , T E M P E R A T U R E C O E F F I C I E N T (m V /C )°θV Z , NOMINAL ZENER VOLTAGE (V)− 3− 2012345678Figure 1. Temperature Coefficients (Temperature Range −55°C to +150°C)V Z , T E M P E R A T U R E C O E F F I C I E N T (m V /C )°θ100101V Z , NOMINAL ZENER VOLTAGE (V)Figure 2. Temperature Coefficients (Temperature Range −55°C to +150°C)V Z , NOMINAL ZENER VOLTAGEFigure 3. Effect of Zener Voltage onZener ImpedanceZ Z T , D Y N A M I C I M P E D A N C E ()Ω1000100101V F , FORWARD VOLTAGE (V)Figure 4. Typical Forward VoltageI F , F O R W A R D C U R R E N T (m A )1000100101C , C A P A C I T A N C E (p F )V Z , NOMINAL ZENER VOLTAGE (V)Figure 5. Typical Capacitance 1000100101V Z , ZENER VOLTAGE (V)1001010.10.01I Z , Z E N ER C U R R E N T (m A )V Z , ZENER VOLTAGE (V)1001010.10.01I R , L E A K A G E C U R R E N T (A )µV Z , NOMINAL ZENER VOLTAGE (V)Figure 6. Typical Leakage Current10001001010.10.010.0010.00010.00001I Z , Z E N E R C U R R E N T (m A )Figure 7. Zener Voltage versus Zener Current(V Z Up to 12 V)Figure 8. Zener Voltage versus Zener Current(12 V to 91 V)PACKAGE DIMENSIONSSOT−23TO−236AB CASE 318−09ISSUE AK*For additional information on our Pb−Free strategy and solderingdetails, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.SOLDERING FOOTPRINT*ǒmm inchesǓSCALE 10:1ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.PUBLICATION ORDERING INFORMATION。

BZX84C75中文资料

V Z1 (V olts ) @ IZT 1 = 5 mA (Note )
Devic e B ZX84C 2V 4 B ZX84C 2V 7 B ZX84C 3V 0 B ZX84C 3V 3 B ZX84C 3V 6 B ZX84C 3V 9 B ZX84C 4V 3 B ZX84C 4V 7 B ZX84C 5V 1 B ZX84C 5V 6
(1) (1)
WEITRON
Maximum Ratings and Electrical Characteristics (TA=25 C Unless Otherwise Noted) Symbol Characteristics Unit Value
PD R JA VF Tj,TSTG 225 556 0.9 -65 to+150 mW C/W V C
5.8 6.4 7 7.7 8.5
Max 3.2 3.6 3.9 4.2 4.5 4.7 5.1 5.4 5.9 6.3
6.8 7.4 8 8.8 9.7
Z ZT 3 (Ohms ) @ I ZT 3 = 20mA 50 50 50 40 40 30 30 15 15 10
6 6 6 6 8
Max R evers e L eakage C urrent IR A 50 20 10 5 5 3 3 3 2 1
10 15 15 15 15
V Z2 (Volts ) @ I ZT 2 = 1 mA (Note ) Min 1.7 1.9 2.1 2.3 2.7 2.9 3.3 3.7 4.2 4.8
5.6 6.3 6.9 7.6 8.4
Max 2.1 2.4 2.7 2.9 3.3 3.5 4 4.7 5.3 6
Z ZT 1 B elow @ I ZT 1 = 2mA 80 80 80 90 130 150 170 180 200 215 240 255

BZX84C18-V中文资料

Document Number Small Signal Zener DiodesFeatures•These diodes are also available in other case styles and other configurationsincluding: the SOD-123 case with type designation BZT52 series, the dual zenerdiode common anode configuration in the SOT-23case with type designation AZ23 series and the dual zener diode common cathode configuration in the SOT-23 case with type designation DZ23series.•The Zener voltages are graded according to the international E 24 standard. Standard Zener volt-age tolerance is ± 5 %. Replace "C" with "B" for ± 2 % tolerance.•Silicon Planar Power Zener Diodes •Lead (Pb)-free component•Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/ECWeight: approx. 8.8 mgPackaging Codes/Options:GS18 / 10 k per 13" reel (8 mm tape), 10 k/box GS08 / 3 k per 7" reel (8 mm tape), 15 k/boxAbsolute Maximum RatingsT amb = 25°C, unless otherwise specified1) Device on fiberglass substrate, see layout.Thermal CharacteristicsT amb = 25°C, unless otherwise specified1)Device on fiberglass substrate, see layout.ParameterT est condition Symbol Value Unit Power dissipationP tot300 1)mWParameterTest condition Symbol Value Unit Thermal resistance junction to ambient air R thJA 420 1)°C/W Junction temperature T j 150°C Storage temperature rangeT S- 65 to + 150°CElectrical CharacteristicsPartnumber MarkingCodeZenerVoltageRangeDynamic Resistance T estCurrentTemp.Coefficientof ZenerVoltageTestCurrentReverse LeakageCurrentV Z @ I ZT1r zj @ I ZT1r zj @ I ZT2I ZT1αVZ @ I ZT1I ZT2I R@ V R VΩmA10-4/°C mAµA Vmin max min maxBZX84C2V4-V Z11 2.2 2.670 (≤100)2755-9.0-4.01501 BZX84C2V7-V Z12 2.5 2.975 (≤100)300 (≤600)5-9.0-4.01201 BZX84C3V0-V Z13 2.8 3.280 (≤95)325 (≤600)5-9.0-3.01101 BZX84C3V3-V Z14 3.1 3.585 (≤95)350 (≤600)5-8.0-3.0151 BZX84C3V6-V Z15 3.4 3.885 (≤90)375 (≤600)5-8.0-3.0151 BZX84C3V9-V Z16 3.7 4.185 (≤90)400 (≤600)5-7.0-3.0131 BZX84C4V3-V Z174 4.680 (≤90)410 (≤600)5-6.0-1.0131 BZX84C4V7-V Z1 4.4550 (≤80)425 (≤500)5-5.0+2.0132 BZX84C5V1-V Z2 4.8 5.440 (≤60)400 (≤480)5-3.0+4.0122 BZX84C5V6-V Z3 5.2615 (≤40)80 (≤400)5-2.0+6.0112 BZX84C6V2-V Z4 5.8 6.6 6.0 (≤10)40 (≤150)5-1.0+7.0134 BZX84C6V8-V Z5 6.47.2 6.0 (≤15)30 (≤80)5+2.0+7.0124 BZX84C7V5-V Z677.9 6.0 (≤15)30 (≤80)5+3.0+7.0115 BZX84C8V2-V Z77.78.7 6.0 (≤15)40 (≤80)5+4.0+7.010.75 BZX84C9V1-V Z88.59.6 6.0 (≤15)40 (≤100)5+5.0+8.010.56 BZX84C10-V Z99.410.68.0 (≤20)50 (≤150)5+5.0+8.010.27 BZX84C11-V Y110.411.610 (≤20)50 (≤150)5+5.0+9.010.18 BZX84C12-V Y211.412.710 (≤25)50 (≤150)5+6.0+9.010.18 BZX84C13-V Y312.414.110 (≤30)50 (≤170)5+7.0+9.010.18 BZX84C15-V Y413.815.610 (≤30)50 (≤200)5+7.0+9.010.050.7 V Znom.BZX84C16-V Y515.317.110 (≤40)50 (≤200)5+8.0+9.510.050.7 V Znom.BZX84C18-V Y616.819.110 (≤45)50 (≤225)5+8.0+9.510.050.7 V Znom.BZX84C20-V Y718.821.215 (≤55)60 (≤225)5+8.0+1010.050.7 V Znom.BZX84C22-V Y820.823.320 (≤55)60 (≤250)5+8.0+1010.050.7 V Znom.BZX84C24-V Y922.825.625 (≤70)60 (≤250)5+8.0+1010.050.7 V Znom.BZX84C27-V Y1025.128.925 (≤80)65 (≤300)2+8.0+100.50.050.7 V Znom.BZX84C30-V Y11283230 (≤80)70 (≤300)2+8.0+100.50.050.7 V Znom.BZX84C33-V Y12313535 (≤80)75 (≤325)2+8.0+100.50.050.7 V Znom.BZX84C36-V Y13343835 (≤90)80 (≤350)2+8.0+100.50.050.7 V Znom.BZX84C39-V Y14374140 (≤130)80 (≤350)2+10+120.50.050.7 V Znom.BZX84C43-V Y15404645 (≤150)85 (≤375)2+10+120.50.050.7 V Znom.BZX84C47-V Y16445050 (≤170)85 (≤375)2+10+120.50.050.7 V Znom.BZX84C51-V Y17485460 (≤180)85 (≤400)2+10+120.50.050.7 V Znom.BZX84C56-V Y18526070 (≤200)100 (≤425)2+9.0+110.50.050.7 V Znom.BZX84C62-V Y19586680 (≤215)100 (≤450)2+9.0+120.50.050.7 V Znom.BZX84C68-V Y20647290 (≤240)150 (≤475)2+10+120.50.050.7 V Znom.BZX84C75-V Y21707995 (≤255)170 (≤500)2+10+120.50.050.7 V Znom. Document Number 85763Document Number Electrical CharacteristicsPartnumberMarking CodeZener Voltage Range Dynamic ResistanceTest CurrentT emp. Coefficient of Zener Voltage T est CurrentReverse LeakageCurrentV Z @ I ZT1r zj @ I ZT1r zj @ I ZT2I ZT1αVZ @ I ZT1I ZT2I R @ V R V ΩmA10-4/°C mAµAVminmax min max BZX84B2V4-V Z50 2.35 2.4570 (≤100)2755-9-41501BZX84B2V7-V Z51 2.65 2.7575 (≤100)300 (≤600)5-9-41201BZX84B3V0-V Z52 2.94 3.0680 (≤95)325 (≤600)5-9-31101BZX84B3V3-V Z53 3.23 3.3785 (≤95)350 (≤600)5-8-3151BZX84B3V6-V Z54 3.53 3.6785 (≤90)375 (≤600)5-8-3151BZX84B3V9-V Z55 3.82 3.9885 (≤90)400 (≤600)5-7-3131BZX84B4V3-V Z56 4.21 4.3980 (≤90)410 (≤600)5-6-1131BZX84B4V7-V Z57 4.61 4.7950 (≤80)425 (≤500)5-52132BZX84B5V1-V Z585 5.240 (≤60)400 (≤480)5-34122BZX84B5V6-V Z59 5.49 5.7115 (≤40)80 (≤400)5-26112BZX84B6V2-V Z60 6.08 6.32 6.0 (≤10)40 (≤150)5-17134BZX84B6V8-V Z61 6.66 6.94 6.0 (≤15)30 (≤80)527124BZX84B7V5-V Z627.357.65 6.0 (≤15)30 (≤80)537115BZX84B8V2-V Z638.048.36 6.0 (≤15)40 (≤80)54710.75BZX84B9V1-V Z648.929.28 6.0 (≤15)40 (≤100)55810.56BZX84B10-V Z659.810.28.0 (≤20)50 (≤150)55810.27BZX84B11-V Z6610.811.210 (≤20)50 (≤150)55910.18BZX84B12-V Z6711.812.210 (≤25)50 (≤150)56910.18BZX84B13-V Z6812.713.310 (≤30)50 (≤170)57910.18BZX84B15-V Z6914.715.310 (≤30)50 (≤200)57910.050.7 V Znom.BZX84B16-V Z7015.716.310 (≤40)50 (≤200)589.510.050.7 V Znom.BZX84B18-V Z7117.618.410 (≤45)50 (≤225)589.510.050.7 V Znom.BZX84B20-V Z7219.620.415 (≤55)60 (≤225)581010.050.7 V Znom.BZX84B22-V Z7321.622.420 (≤55)60 (≤250)581010.050.7 V Znom.BZX84B24-V Z7423.524.525 (≤70)60 (≤250)581010.050.7 V Znom.BZX84B27-V Z7526.527.525 (≤80)65 (≤300)28100.50.050.7 V Znom.BZX84B30-V Z7629.430.630 (≤80)70 (≤300)28100.50.050.7 V Znom.BZX84B33-V Z7732.333.735 (≤80)75 (≤325)28100.50.050.7 V Znom.BZX84B36-V Z7835.336.735 (≤90)80 (≤350)28100.50.050.7 V Znom.BZX84B39-V Z7938.239.840 (≤130)80 (≤350)210120.50.050.7 V Znom.BZX84B43-V Z8042.143.945 (≤150)85 (≤375)210120.50.050.7 V Znom.BZX84B47-V Z8146.147.950 (≤170)85 (≤375)210120.50.050.7 V Znom.BZX84B51-V Z82505260 (≤180)85 (≤400)210120.50.050.7 V Znom.BZX84B56-V Z8354.957.170 (≤200)100 (≤425)29110.50.050.7 V Znom.BZX84B62-V Z8460.863.280 (≤215)100 (≤450)29120.50.050.7 V Znom.BZX84B68-V Z8566.669.490 (≤240)150 (≤475)210120.50.050.7 V Znom.BZX84B75-VZ8673.576.595 (≤255)170 (≤500)210120.50.050.7 V Znom. Document Number 85763Typical Characteristics (Tamb = 25 °C unless otherwise specified)Figure 1. Forward characteristics Figure 2. Admissible Power Dissipation vs. Ambient Temperature Figure3. Pulse Thermal Resistance vs. Pulse Duration1811418115Figure 4. Dynamic Resistance vs. Zener CurrentFigure 5. Capacitance vs. Zener VoltageFigure6. Dynamic Resistance vs. Zener Current1811718118Document Number Figure 7. Dynamic Resistance vs. Zener CurrentFigure 8. Thermal Differential Resistance vs. Zener Voltage Figure9. Dynamic Resistance vs. Zener Voltage18120Figure 10. Temperature Dependence of Zener Voltage vs. ZenerVoltageFigure 11. Change of Zener Voltage vs. Junction TemperatureFigure 12. Temperature Dependence of Zener Voltage vs. ZenerVoltage18124°C18136 Document Number 85763Figure 13. Change of Zener Voltage vs. Junction TemperatureFigure 14. Change of Zener voltage from turn-on up to the point ofthermal equilibrium vs. Zener voltageFigure 15. Change of Zener voltage from turn-on up to the point ofthermal equilibrium vs. Zener voltage181261813718138Document Number Figure 16. Breakdown CharacteristicsFigure17. Breakdown Characteristics1811118112 Document Number 85763Layout for R Theta;JA testThickness: Fiberglass 0.059 in. (1.5 mm)Copper leads 0.012 in. (0.3 mm)Figure18. Breakdown Characteristics18113Package Dimensions in mm (Inches)Document Number Ozone Depleting Substances Policy StatementIt is the policy of Vishay Semiconductor GmbH to1.Meet all present and future national and international statutory requirements.2.Regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment.It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs).The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances.Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents.1.Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendmentsrespectively2.Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the EnvironmentalProtection Agency (EPA) in the USA3.Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances.We reserve the right to make changes to improve technical designand may do so without further notice.Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use.Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Document Number 85763。

BZX84-C2V2中文资料

FeaturesVz R ange 2.4 to 75V Power Dis s ipation 300mWF eaturesS ilicon P lanar Power Zener DiodesThe Zener voltages are graded according to theinternational E 24 standard.S tandard Zener voltage tolerance is ±5%.R eplace "C "with "B "for ±2% tol-erance.Other voltage tolerances and other Zener voltages are available upon request.Maximum R atings and Thermal C haracteris tics(T A = 25 unless otherwise noted)Parameter S ymbol Value Unit Zener C urrentI ZM 250mA Power Dissipation at T amb = 25¡ÉP tot 300(1)mWThermal R esistance Junction to Ambient Air R JA 420(1)¡É / W Junction Temperature T j 150¡É S torage Temperature R angeT S¡É Notes :(1) Device on fiberglass substrate, see layout..056 (1.43.122 (3.1)Top V iew).045 (1.15).110 (2.8).052 (1.33)).037 (0.95)S OT-23Top ViewDimensions in inches and (millimeters)S ilicon E pitaxial P lanar Diode · Fast switching diode in case S OT-23, especiallysuited for automatic insertion.Mechanical DataC as e:S OT-23 P lastic Package Weight:approx.0.008g· · · Mounting P ad L ayout65 to +150-¡ÉB ZX84-C 1V8TBD 1.70 2.005B ZX84-C 2V0TB D 1.90 2.205B ZX84-C 2V2TB D 2.10 2.405B ZX84-C 2V4Z11 2.20 2.605B ZX84-C 2V7Z12 2.50 2.905B ZX84-C 3Z13 2.80 3.205B ZX84-C 3V3Z14 3.10 3.505B ZX84-C 3V6Z15 3.40 3.805B ZX84-C 3V9Z16 3.70 4.105B ZX84-C 4V3Z17 4.00 4.605B ZX84-C 4V7Z1 4.40 5.005B ZX84-C 5V1Z2 4.80 5.405B ZX84-C 5V6Z3 5.20 6.005B ZX84-C 6V2Z4 5.80 6.605B ZX84-C 6V8Z5 6.407.205B ZX84-C 7V5Z67.007.905B ZX84-C 8V2Z77.708.705B ZX84-C 9V1Z88.509.605B ZX84-C 10Z99.410.65B ZX84-C 11Y 110.411.65B ZX84-C 12Y 211.412.75B ZX84-C 13Y 312.414.15B ZX84-C 15Y 413.815.65B ZX84-C 16Y 515.317.15B ZX84-C 18Y 616.819.15B ZX84-C 20Y 718.821.25B ZX84-C 22Y 820.823.35B ZX84-C 24Y 922.825.65B ZX84-C 27Y 1025.128.92B ZX84-C 30Y 1128.032.02B ZX84-C 33Y 1231.035.02B ZX84-C 36Y 1334.038.02B ZX84-C 39Y 1437.041.02B ZX84-C 43Y 1540.046.02B ZX84-C 47Y 1644.050.02B ZX84-C 51Y 1748.054.02B ZX84-C 56Y 1852.060.02B ZX84-C 62Y 1958.066.02B ZX84-C 68Y 2064.072.02B ZX84-C 75Y 2170.079.02B ZX84-B 1V8TB D 1.80 1.905B ZX84-B 2V0TB D 2.01 2.095B ZX84-B 2V2TB D 2.21 2.305B ZX84-B 2V4Z50 2.35 2.455B ZX84-B 2V7Z51 2.65 2.755B ZX84-B 3Z52 2.94 3.065B ZX84-B 3V3Z53 3.23 3.375B ZX84-B 3V6Z54 3.53 3.675B ZX84-B 3V9Z55 3.82 3.985B ZX84-B 4V3Z56 4.21 4.395B ZX84-B 4V7Z57 4.61 4.795B ZX84-B 5V1Z58 5.00 5.205B ZX84-B 5V6Z59 5.49 5.715B ZX84-B 6V2Z60 6.08 6.325B ZX84-B 6V8Z61 6.66 6.945B ZX84-B 7V5Z627.357.655B ZX84-B 8V2Z638.048.365B ZX84-B 9V1Z648.929.285B ZX84-B 10Z659.8010.25B ZX84-B 11Z6610.811.25B ZX84-B 12Z6711.812.25B ZX84-B 13Z6812.713.35B ZX84-B 15Z6914.715.35B ZX84-B 16Z7015.716.35B ZX84-B 18Z7117.618.45B ZX84-B 20Z7219.620.45B ZX84-B 22Z7321.622.45B ZX84-B 24Z7423.524.55B ZX84-B 27Z7526.527.52B ZX84-B 30Z7629.430.62B ZX84-B 33Z7732.333.72B ZX84-B 36Z7835.336.72B ZX84-B 39Z7938.239.82B ZX84-B 43Z8042.143.92B ZX84-B 47Z8146.147.92B ZX84-B 51Z8250.052.02B ZX84-B 56Z8354.957.12B ZX84-B 62Z8460.863.22B ZX84-B 68Z8566.669.42B ZX84-B 75Z8673.576.52Type ±5% Tol.Zener Voltage range (1)at I ZT1V Z (V)min.max.Tes t C urrentI ZT1(mA)Notes :(1) Measured with pulses t p = 5 msE lectrical C haracteris tics (T A = 25¡É unless otherwise noted) Maximum VF = 0.9V at I F = 10mAMarking C ode Type ±2% Tol.Zener Voltage range (1)at I ZT1V Z (V)min.max.Tes t C urrentI ZT1(mA)Marking C odeR atings andC haracteris tic C ur ves (T A = 25¡É unless otherwise noted)102030405012345678910I ,Z E N E R C U R R E N T (m A )Z V ,ZENER VOL TAGE (V)Fi g.2Zener Breakdown C haracteristicsZ 0246810102030405060708090100I ,Z E N E R C U R R E N T(m A )Z V,ZENER VOL TAGE (V)Fi g.4Zener Breakdown C haracteristicsZ C ,J U N C T I O N C A P A C I T A N C E (p F )j 101001000V ,NOMINAL ZENER VOL TAGE (V)Fig.5Junction Capacitance vs Nominal Zener VoltageZ400T ,Ambient Temperature,(°C)A Fi g.1Power Derating CurveP ,P o w e r D i s s i p a t i o n (m W )d 20010030005001002000102030I ,Z E N E R C U R R E N T(m A )Z V ,ZENER VOL TAGE (V)Fi g.3Zener Breakdown CharacteristicsZ 10203040。

BZX84C2V7V中文资料

SILIICON PLANAR VOLTAGE REGULATOR DIODEBZX84C2V4 to 75V SOT-23Formed SMD PackageLow voltage general purpose voltage regulator diode ABSOLUTE MAXIMUM RATINGS (T a =25°C)UNIT %Repetitive Peak Forward Current mA Repetitive Peak Working Current mA mW mW °C °CTHERMAL RESISTANCE K/W* Device mounted on a ceramic alumna** Device mounted on an FR5 printed circuit boardELECTRICAL CHARACTERISTICS (T a =25°C unless specified otherwise) Device Temperature DifferentialI R at V RMarkingCoefficient ResistanceS Z (mV/K)rdiff (Ω)µAat I Z test=5mA at I Z test=1mAmin max min max max Max (V)BZX84C2V4 2.20 2.60 -3.560050 1.0Z11BZX84C2V72.50 2.90 -3.560020 1.0Z12BZX84C3V0 2.80 3.20 -3.560010 1.0Z13BZX84C3V3 3.10 3.50 -3.5600 5.0 1.0Z14BZX84C3V6 3.40 3.80 -3.5600 5.0 1.0Z15BZX84C3V9 3.70 4.10-3.56003.0 1.0Z16BZX84C4V34.00 4.60 -3.5600 3.0 1.0Z17BZX84C4V7 4.40 5.00 -3.5 0.2500 3.0 2.0Z1BZX84C5V1 4.80 5.40 -2.7 1.2480 2.0 2.0Z2BZX84C5V6 5.20 6.00 -2.0 2.5400 1.0 2.0Z3BZX84C6V2 5.80 6.60 0.4 3.7150 3.0 4.0Z4BZX84C6V8 6.407.20 1.2 4.580 2.0 4.0Z5BZX84C7V57.007.90 2.5 5.380 1.0 5.0Z6BZX84C8V27.708.70 3.2 6.2800.7 5.0Z7BZX84C9V18.509.60 3.8 7.01000.5 6.0Z8BZX84C109.4010.604.5 8.01500.27.0Z9BZX84C2V4_75V Rev_060506E*** Pulse Test 20ms < tp < 50ms1515152060401015909090801001009595 + 5VALUE max I ZRM Storage Temperature T stg Junction to Ambient*R th (j-a)DESCRIPTIONI FRM Working Voltage Tolerance Power Dissipation upto T a =25ºC SYMBOL *P D ***V Z ( + 5%)(V)at I Z test=5mA Resistance rdiff (Ω)at I Z test=5mA250420300- 65 to +150250Forward Voltage at V F <0.9V at 10mA and <1.5V at 200mAVoltage 150250Differential Working Power Dissipation upto T c =25ºC **P D Junction Temperature T j Pin Configuration1 = A N ODE2 = N C3 =CATHODE12Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanySILIICON PLANAR VOLTAGE REGULATOR DIODEBZX84C2V4 to 75V SOT-23Formed SMD PackageELECTRICAL CHARACTERISTICS (T a =25°C unless specified otherwise) Device Temperature DifferentialI R at V RMarkingCoefficientResistanceS Z (mV/K)rdiff (Ω)µAat I Z test=5mAat I Z test=1mA min max min max max Max (V)BZX84C1110.4011.60 5.4 9.01500.18Y1BZX84C1211.4012.70 6.0 101500.18Y2BZX84C1312.4014.10 7.0 111700.18Y3BZX84C1513.8015.60 9.2 132000.0510.5Y4BZX84C1615.3017.10 10.4 142000.0511.2Y5BZX84C1816.8019.10 12.4 162250.0512.6Y6BZX84C2018.8021.20 14.4 182250.0514.0Y7BZX84C2220.8023.30 16.4 202500.0515.4Y8BZX84C2422.8025.60 18.4 222500.0516.8Y9at I Z Test=2mA at I Z Test=0.5mABZX84C2725.1028.90 21.4 25.33000.0518.9Y10BZX84C3028.0032.00 24.4 29.43000.0521.0Y11BZX84C3331.0035.00 27.4 33.43250.0523.1Y12BZX84C3634.0038.00 30.4 37.43500.0525.2Y13BZX84C3937.0041.00 33.4 41.23500.0527.3Y14BZX84C4340.0046.00 37.6 46.63750.0530.1Y15BZX84C4744.0050.00 42.0 51.83750.0532.9Y16BZX84C5148.0054.00 46.6 57.24000.0535.7Y17BZX84C5652.0060.00 52.2 63.84250.0539.2Y18BZX84C6258.0066.00 58.8 71.64500.0543.4Y19BZX84C6864.0072.00 65.6 79.84750.0547.6Y20BZX84C7570.0079.0073.4 88.65000.0552.5Y21BZX84C2V4_75V Rev_060506E*** Pulse Test 20ms < tp < 50ms2002152402551301501701808080908025303070at I Z test=5mA at I Z test=5mA max at I Z test=2mAat I Z Test=2mA4045555520Resistance ***V Z ( + 5%)rdiff (Ω)(V)Forward Voltage at V F <0.9V at 10mA and <1.5V at 200mAWorking Differential Voltage Pin Configuration1 = A N ODE2 = N C3 =CATHODE12BZX84C2V4 to 75V SOT-23Formed SMD PackageSOT-23 Package Reel InformationReel specification for W" Packing (13" reel)BZX84C2V4_75V Rev_060506ESOT-23 Formed SMD PackageTape Specification for SOT-23 Surface Mount DeviceS O T -23 T &R3K /reel 10K /reel136 g m /3K p c s 415 g m /10K p c s3" x 7.5" x 7.5"9" x 9" x 9"13" x 13" x 0.5"12 K 51 K 10 K17" x 15" x 13.5"19" x 19" x 19"17" x 15" x 13.5"192 K 408 K 300 K12 k g s 28 k g s 16 k g sPACKAGEN e t W e i g h t /Q t y DetailsS T A N D A R D PACKI N N E R C A R T O N B O XQ t y O U T E R C A R T O N B O XQ t y G r W t SizeSizePacking Detail±0.0114.47.9 – 10.9T R A I L E RF I X I N GT A P EL E A D E R9.2±0.5MAXNOTES:No. of Devices8mm Tape Size of Reel 330 mm (13")10,000 Pcs 8mm Tape Size of Reel 180 mm (7")3,000 Pcs1.The bandolier of 330 mm reel contains at least 10,000 devices.2.The bandolier of 180 mm reel contains at least 3,000 devices.3.No more than 0.5% missing devices / reel. 50 empty compartments for 330 mm reel.15 empty compartments for 180 mm reel.4.Three consecutive empty places might be found provided this gap is followed by 6 consecutive devices.5.The carrier tape (leader) starts with at least 75 empty positions (equivalent to 330 mm).In order to fix the carrier tape a self adhesive tape of 20 to 50 mm is applied. At the end of the bandolier at least 40 empty positions (equivalent to 160 mm) are there.3.15Customer Notes BZX84C2V4 to 75VSOT-23Formed SMD Package1. CDIL Semiconductor Devices are RoHS compliant, customers are requested to pleasedispose as per prevailing Environmental Legislation of their Country.2. In Europe, please dispose as per EU Directive 2002/96/EC on Waste Electrical andElectronic Equipment (WEEE).BZX84C2V4_75V Rev_060506E DisclaimerThe product information and the selection guides facilitate selection of the CDIL's Semiconductor Device(s)best suited for application in your product(s)as per your requirement.It is recommended that you completely review our Data Sheet(s)so as to confirm that the Device(s)meet functionality parameters for your application.The information furnished in the Data Sheet and on the CDIL Web Site/CD are believed to be accurate and reliable.CDIL however,does not assume responsibility for inaccuracies or incomplete information.Furthermore,CDIL does not assume liability whatsoever,arising out of the application or use of any CDIL product;neither does it convey any license under its patent rights nor rights of others. These products are not designed for use in life saving/support appliances or systems.CDIL customers selling these products(either as individual Semiconductor Devices or incorporated in their end products),in any life saving/support appliances or systems or applications do so at their own risk and CDIL will not be responsible for any damages resulting from such sale(s).CDIL strives for continuous improvement and reserves the right to change the specifications of its products without prior notice.CDIL is a registered Trademark ofContinental Device India LimitedC-120 Naraina Industrial Area, New Delhi 110 028, India.Telephone + 91-11-2579 6150, 4141 1112 Fax + 91-11-2579 5290, 4141 1119email@ 。

BZX84C12LT1中文资料

BZX84B4V7LT1,BZX84C2V4LT1 Series Zener Voltage Regulators225 mW SOT−23 Surface MountThis series of Zener diodes is offered in the convenient, surface mount plastic SOT−23 package. These devices are designed to provide voltage regulation with minimum space requirement. They are well suited for applications such as cellular phones, hand held portables,and high density PC boards.Features•225 mW Rating on FR−4 or FR−5 Board•Zener Breakdown V oltage Range − 2.4 V to 75 V•Package Designed for Optimal Automated Board Assembly •Small Package Size for High Density Applications•ESD Rating of Class 3 (>16 KV) per Human Body Model •Tight Tolerance Series Available (See Page 4)•Pb−Free Packages are AvailableMechanical CharacteristicsCASE: V oid-free, transfer-molded, thermosetting plastic case FINISH: Corrosion resistant finish, easily SolderableMAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES:260°C for 10 SecondsPOLARITY: Cathode indicated by polarity band FLAMMABILITY RATING: UL 94 V−0MAXIMUM RATINGSRatingSymbol MaxUnitTotal Power Dissipation on FR−5 Board,(Note 1) @ T A = 25°C Derated above 25°CThermal Resistance, Junction−to−Ambient P DR q JA 2251.8556mWmW/°C °C/W Total Power Dissipation on Alumina Substrate, (Note 2) @ T A = 25°C Derated above 25°CThermal Resistance, Junction−to−Ambient P DR q JA 3002.4417mW mW/°C °C/W Junction and Storage Temperature RangeT J , T stg−65 to+150°CMaximum ratings are those values beyond which device damage can occur.Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected.1.FR−5 = 1.0 X 0.75 X 0.62 in.2.Alumina = 0.4 X 0.3 X 0.024 in., 99.5% alumina.See specific marking information in the device marking column of the Electrical Characteristics table on page 3 of this data sheet.DEVICE MARKING INFORMATIONELECTRICAL CHARACTERISTICS(Pinout: 1-Anode, 2-No Connection, 3-Cathode)(T A = 25°C unless otherwise noted, V F = 0.95 V Max. @ I F = 10 mA) Symbol ParameterV Z Reverse Zener Voltage @ I ZTI ZT Reverse CurrentZ ZT Maximum Zener Impedance @ IZTI R Reverse Leakage Current @ V RV R Reverse VoltageI F Forward CurrentV F Forward Voltage @ I FQ V Z Maximum Temperature Coefficient of V ZC Max. Capacitance @ V R = 0 and f = 1 MHzELECTRICAL CHARACTERISTICS − BZX84CxxxLT1 SERIES (STANDARD TOLERANCE) (Pinout: 1-Anode, 2-No Connection, 3-Cathode)(T A = 25°C unless otherwise noted, V F = 0.90 V Max. @ I F = 10 mA) (Devices listed in bold, italic are ON Semiconductor Preferred devices.)Device*DeviceMarkingV Z1 (Volts)@I ZT1=5mA(Note 3)Z ZT1(W)@ I ZT1 =5 mAV Z2 (V)@I ZT2=1mA(Note 3)Z ZT2(W)@ I ZT2 =1 mAV Z3 (V)@I ZT3=20mA(Note 3)Z ZT3(W)@ I ZT3 =20 mAMax ReverseLeakageCurrentq VZ(mV/k)@ I ZT1 = 5 mAC (pF)@ V R = 0f = 1 MHzMin Nom Max Min Max Min MaxV RVoltsI Rm A@Min MaxBZX84C2V4LT1, G Z11 2.2 2.4 2.6100 1.7 2.1600 2.6 3.250501−3.50450 BZX84C2V7LT1, G Z12 2.5 2.7 2.9100 1.9 2.46003 3.650201−3.50450 BZX84C3V0LT1, G Z13 2.83 3.295 2.1 2.7600 3.3 3.950101−3.50450 BZX84C3V3LT1, G Z14 3.1 3.3 3.595 2.3 2.9600 3.6 4.24051−3.50450 BZX84C3V6LT1, G Z15 3.4 3.6 3.890 2.7 3.3600 3.9 4.54051−3.50450 BZX84C3V9LT1, G Z16 3.7 3.9 4.190 2.9 3.5600 4.1 4.73031−3.5−2.5450 BZX84C4V3LT1, G W94 4.3 4.690 3.34600 4.4 5.13031−3.50450 BZX84C4V7LT1,G Z1 4.4 4.7580 3.7 4.7500 4.5 5.41532−3.50.2260 BZX84C5V1LT1,G Z2 4.8 5.1 5.460 4.2 5.34805 5.91522−2.7 1.2225 BZX84C5V6LT1,G Z3 5.2 5.6640 4.86400 5.2 6.31012−2.0 2.5200 BZX84C6V2LT1,G Z4 5.8 6.2 6.610 5.6 6.6150 5.8 6.86340.4 3.7185 BZX84C6V8LT1, G Z5 6.4 6.87.215 6.37.280 6.47.4624 1.2 4.5155 BZX84C7V5LT1, G Z677.57.915 6.97.98078615 2.5 5.3140 BZX84C8V2LT1, G Z77.78.28.7157.68.7807.78.860.75 3.2 6.2135 BZX84C9V1LT1, G Z88.59.19.6158.49.61008.59.780.56 3.87.0130 BZX84C10LT1, G Z99.41010.6209.310.61509.410.7100.27 4.58.0130 BZX84C11LT1, G Y110.41111.62010.211.615010.411.8100.18 5.49.0130 BZX84C12LT1,G Y211.41212.72511.212.715011.412.9100.18 6.010.0130 BZX84C13LT1, G Y312.41314.13012.31417012.514.2150.187.011.0120 BZX84C15LT1, G Y413.81515.63013.715.520013.915.7200.0510.59.213.0110 BZX84C16LT1, G Y515.31617.14015.21720015.417.2200.0511.210.414.0105 BZX84C18LT1,G Y616.81819.14516.71922516.919.2200.0512.612.416.0100 BZX84C20LT1, G Y718.82021.25518.721.122518.921.4200.051414.418.085 BZX84C22LT1, G Y820.82223.35520.723.225020.923.4250.0515.416.420.085 BZX84C24LT1, G Y922.82425.67022.725.525022.925.7250.0516.818.422.080DeviceDeviceMarkingV Z1 Below@I ZT1=2mA Z ZT1Below@ I ZT1 =2 mAV Z2 Below@I ZT2=0.1m-A Z ZT2Below@ I ZT4 =0.5 mAV Z3 Below@I ZT3=10mA Z ZT3Below@ I ZT3 =10 mAMax ReverseLeakageCurrentq VZ(mV/k) Below@ I ZT1 = 2 mAC (pF)@ V R = 0f = 1 MHzMin Nom Max Min Max Min MaxV R(V)I Rm A@Min MaxBZX84C27LT1, G Y1025.12728.9802528.930025.229.3450.0518.921.425.370 BZX84C30LT1, G Y112830328027.83230028.132.4500.052124.429.470 BZX84C33LT1, G Y123133358030.83532531.135.4550.0523.127.433.470 BZX84C36LT1, G Y133436389033.83835034.138.4600.0525.230.437.470 BZX84C39LT1, G Y1437394113036.74135037.141.5700.0527.333.441.245 BZX84C43LT1, G Y1540434615039.74637540.146.5800.0530.137.646.640 BZX84C47LT1, G Y1644475017043.75037544.150.5900.0532.942.051.840 BZX84C51LT1, G Y1748515418047.65440048.154.61000.0535.746.657.240 BZX84C56LT1, G Y1852566020051.56042552.160.81100.0539.252.263.840 BZX84C62LT1, G Y1958626621557.46645058.2671200.0543.458.871.635 BZX84C68LT1, G Y2064687224063.47247564.273.21300.0547.665.679.835 BZX84C75LT1, G Y2170757925569.47950070.380.21400.0552.573.488.635 3.Zener voltage is measured with a pulse test current I Z at an ambient temperature of 25°C.*The “G” suffix indicates Pb−Free package available.ELECTRICAL CHARACTERISTICS − BZX84BxxxL (Tight Tolerance Series)(Pinout: 1-Anode, 2-No Connection, 3-Cathode)(T A = 25°C unless otherwise noted, V F = 0.90 V Max. @ I F = 10 mA)DeviceDeviceMarkingV Z (Volts) @ I ZT = 5 mA(Note 4)Z ZT (W) @I ZT = 5 mA(Note 4)Max ReverseLeakageCurrent q VZ(mV/k)@ I ZT = 5 mA C (pF)@ V R=0,f = 1 MHzI R@V RMin Nom Max Max m A Volts Min MaxBZX84B4V7LT1, G T10 4.61 4.7 4.798032−3.50.2260 BZX84B5V1LT1, G T11 5.00 5.1 5.206022−2.7 1.2225 BZX84B5V6LT1, G T12 5.49 5.6 5.714012−2 2.5200 BZX84B6V2LT1, G T13 6.08 6.2 6.3210340.4 3.7185 BZX84B6V8LT1, G T14 6.66 6.8 6.941524 1.2 4.5155 BZX84B7V5LT1, G T157.357.57.651515 2.5 5.3140 BZX84B8V2LT1, G T168.048.28.36150.75 3.2 6.2135 BZX84B9V1LT1, G T178.929.19.28150.56 3.87130 BZX84B16LT1, G T1915.71616.3400.0511.210.414105 BZX84B18LT1, G T2017.61818.4450.0512.612.416100 4.Zener voltage is measured with a pulse test current I Z at an ambient temperature of 25°C.*The “G” suffix indicates Pb−Free package available.V Z , T E M P E R A T U R E C O E F F I C I E N T (m V /C )°θV Z , NOMINAL ZENER VOLTAGE (V)− 3− 2012345678Figure 1. Temperature Coefficients (Temperature Range −55°C to +150°C)V Z , T E M P E R A T U R E C O E F F I C I E N T (m V /C )°θ100101V Z , NOMINAL ZENER VOLTAGE (V)Figure 2. Temperature Coefficients (Temperature Range −55°C to +150°C)V Z , NOMINAL ZENER VOLTAGEFigure 3. Effect of Zener Voltage onZener ImpedanceZ Z T , D Y N A M I C I M P E D A N C E ()Ω1000100101V F , FORWARD VOLTAGE (V)Figure 4. Typical Forward VoltageC , C A P A C I T A N C E (p F )1000100101V Z , ZENER VOLTAGE (V)I Z , Z E N E R C U R R E N T (m A )V Z , ZENER VOLTAGE (V)1001010.10.01I R , L E A K A G E C U R R E N T (A )μV Z , NOMINAL ZENER VOLTAGE (V)Figure 6. Typical Leakage Current10001001010.10.010.0010.00010.00001I Z , Z E N E R C U R R E N T (m A )Figure 7. Zener Voltage versus Zener Current(V Z Up to 12 V)Figure 8. Zener Voltage versus Zener Current(12 V to 91 V)PACKAGE DIMENSIONSSOT−23 (TO−236)CASE 318−08ISSUE AN*For additional information on our Pb−Free strategy and solderingdetails, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.SOLDERING FOOTPRINT*ǒmm inchesǓSTYLE 8:PIN 1.ANODE2.NO CONNECTION3.CATHODENOTES:1.DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.2.CONTROLLING DIMENSION: INCH.3.MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEADTHICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL.4.318−01 THRU −07 AND −09 OBSOLETE, NEW STANDARD 318−08.VIEW CDIM A MIN NOM MAX MIN MILLIMETERS0.89 1.00 1.110.035INCHESA10.010.060.100.001b 0.370.440.500.015c 0.090.130.180.003D 2.80 2.90 3.040.110E 1.20 1.30 1.400.047e 1.78 1.90 2.040.070L 0.100.200.300.0040.0400.0440.0020.0040.0180.0200.0050.0070.1140.1200.0510.0550.0750.0810.0080.012NOM MAX L1 2.10 2.40 2.640.0830.0940.104H E 0.350.540.690.0140.0210.029ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.PUBLICATION ORDERING INFORMATION。

BZX84C 6V2资料

SOT-23 Packaging Configuration: Figure 1. 0
Customized La bel
Packaging Description:
SOT-23 parts are shipped in tape. The carrier tape is made from a dissipative (carbon filled) polycarbonate resin. The cover tape is a m ultilayer film (Heat Activated Adhesive in na ture) primarily composed of polyester film, adhesive layer, sealant, and anti-static sprayed agent. These reeled pa rts in standard option are shipped with 3,000 units per 7" or 177cm diameter reel. The reels are dark blue in color an d is made of polystyrene plastic (antistatic coated). Other option comes in 10,000 units per 13" or 330cm diameter reel. This and s ome other options are described in the P ackaging Information table. These full reels are individually labeled and placed inside a s tanda rd intermediate made of recyclable corrugated brown pap er with a Fairchil d logo printing. One pizza box contains eight reels maximum. And thes e intermediate boxes are placed inside a labeled shipping box which comes in different sizes depending on t he nu mber of parts shippe d.

DIODES齐纳二极管BZX84C2V4- BZX84C51选型手册

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BZX84C2V4 - BZX84C51
Document number: DS18001 Rev. 33 - 2
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Value
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0.9
V
Thermal Characteristics
Characteristic Power Dissipation (Note 6) Power Dissipation (Note 7) Thermal Resistance, Junction to Ambient Air (Note 6) Thermal Resistance, Junction to Ambient Air (Note 7) Operating and Storage Temperature Range
Maximum Zener Impedance f = 1KHz
ZZT @ IZT
ZZK @ IZK
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() (mA)
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600 1.0
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