AO4468 规格书

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4468场效应管参数

4468场效应管参数场效应管（Field Effect Transistor，简称FET）是一种半导体器件，用于放大或控制电流。

它的特点是具有高输入阻抗、低输出阻抗和大功率放大能力。

在电子学领域，场效应管被广泛应用于各种电路中。

场效应管有多种类型，包括MOSFET（金属-氧化物-半导体场效应管）、JFET（结型-场效应管）和IGBT（绝缘栅双极型晶体管）等。

这些不同类型的场效应管有着不同的参数，下面将详细介绍MOSFET的参数。

1. 阈值电压（Threshold Voltage）：阈值电压是指在MOSFET的栅极和源极之间形成导通的最低电压。

当栅极电压高于阈值电压时，MOSFET 开始导通。

阈值电压的大小决定了MOSFET的开启特性。

2. 静态电流（Static Current）：静态电流是指在MOSFET的导通状态下通过源极和漏极之间的电流。

静态电流的大小与栅极电压和源极-漏极电压有关，它决定了MOSFET的工作状态和功率消耗。

3. 最大漏极电流（Maximum Drain Current）：最大漏极电流是指在给定的栅极电压和源极-漏极电压下，MOSFET可以承受的最大电流。

超过最大漏极电流的电流会导致MOSFET损坏。

4. 开启电压（Turn-On Voltage）：开启电压是指在MOSFET的关断状态下，当栅极电压高于阈值电压时，MOSFET开始导通的电压。

开启电压的大小决定了MOSFET的灵敏度和控制能力。

5. 关断电压（Turn-Off Voltage）：关断电压是指在MOSFET的导通状态下，当栅极电压低于阈值电压时，MOSFET开始关断的电压。

关断电压的大小决定了MOSFET的稳定性和可靠性。

6. 输入电容（Input Capacitance）：输入电容是指在MOSFET的栅极和源极之间的电容。

输入电容的大小决定了MOSFET对输入信号的响应速度和频率响应。

7. 输出电容（Output Capacitance）：输出电容是指在MOSFET的源极和漏极之间的电容。

霍夫曼接线盒HoffmannA14128CHA12064CHA1212CH...

霍夫曼接线盒Hoffmann A14128CHA12064CHA1212CHA125一、介绍霍夫曼接线盒是一种用于电气接线和保护的设备，常用于工业控制和电力系统中。

霍夫曼A14128CHA12064CHA1212CHA125系列接线盒是霍夫曼公司推出的一款高品质、多功能的接线盒产品系列。

本文将对该系列产品的特点、规格和应用进行详细介绍。

二、特点1.高品质材料：霍夫曼A14128CHA12064CHA1212CHA125接线盒采用优质的聚碳酸酯材料，经过精细加工而成，具有较强的耐热、耐腐蚀和耐磨损性能。

2.多种尺寸规格：该系列接线盒有多种尺寸规格可供选择，包括A14128CHA、12064CHA、1212CHA和125等型号，以满足不同场景的需求。

3.高度可定制化：用户可以根据具体的电气布线需求，选择合适的接线盒型号，并根据需要定制配件和布线方案。

4.防尘防水性能优异：霍夫曼接线盒采用密封设计，具有良好的防水和防尘性能，能够在恶劣环境下正常工作。

5.易于安装和维护：接线盒采用模块化设计，安装简便，配备标准化配件，方便用户进行维修和升级。

三、规格参数以下是霍夫曼A14128CHA12064CHA1212CHA125接线盒的主要规格参数：型号尺寸(mm)最大连接截面(mm²)最大电流(A)额定电压(V)A14128CHA153x110x781032690 12064CHA116x77x49625690 1212CHA79x78x39416400125138x85x551032690四、应用场景霍夫曼A14128CHA12064CHA1212CHA125接线盒广泛应用于以下场景：1.电力系统：用于电力传输、变电站等电力系统中的接线和连接。

2.工业自动化：用于工业控制设备、机器人和自动化生产线等的电气接线。

3.建筑工程：用于建筑物的电气布线和接线，如住宅、商业楼和工厂等。

4.交通运输：适用于交通信号灯、铁路信号设备以及航空航天等领域。

AO4438规格书 AOS

AO4438
60V N-Channel MOSFET
General Description
The AO4438 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications.
Rev.5. 0: August 2013

Page 2 of 4
AO4438
TYPICAL ELECTRNNEL
30 10V 4V 4.5V 6V 20 ID (A) ID(A) 25 20 15 10 25°C 5 0 0 1 2 3 4 5 VDS (Volts) Fig 1: On-Region Characteristics 0 1.5 2 2.5 3 3.5 4 VGS(Volts) Figure 2: Transfer Characteristics 2.2 VGS=4.5V 20 RDS(ON) (mΩ ) Normalized On-Resistance 2 1.8 1.6 1.4 1.2 1 0.8 0 5 10 15 20 0 25 50 75 100 125 150 175 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature VGS=4.5V ID=7.6A VGS=10V ID=8.2A VDS=5V 125°C 30
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE

adr4468结构式 -回复

adr4468结构式-回复ADR4468结构式回答ADR4468是一种具有特定结构的无线电对讲机。

本文将会一步一步回答关于ADR4468结构式的问题，解释并介绍该无线电对讲机的各个组成部分。

第一部分：总体结构和外观（150字）ADR4468是一款手持式无线对讲机，采用坚固的外壳，适合在各种环境下使用。

它具有简洁的外观设计，尺寸适中，携带方便。

在外部，ADR4468通常包括一个液晶显示屏，一组按键和一个可用于连接外部设备的接口。

第二部分：内部电路结构（300字）ADR4468的内部结构包括主控芯片、收发模块、功放模块和电源管理模块。

主控芯片是整个对讲机的大脑，负责控制和协调其他模块的工作。

收发模块包括接收器和发射器，用于接收和发送无线信号。

功放模块负责放大发射信号以增加其传输距离。

电源管理模块则负责对电池供电进行管理，以确保对讲机的正常使用。

第三部分：液晶显示屏和按键（400字）ADR4468的液晶显示屏通常用于显示频率、信号强度、电池电量和其他设置选项。

液晶显示屏的大小和分辨率会根据具体型号的不同而有所不同。

对讲机的按键用于控制频率选择、音量调节、通道切换以及其他功能设置。

通常会有多个按键，而这些按键的功能会显示在液晶显示屏上。

第四部分：外部接口和连接设备（400字）ADR4468通常配备有一个标准的音频插孔，用于连接耳机、扩音器或其他音频设备。

它还配备有一个充电插座，用户可以通过连接充电器将电池充满。

此外，ADR4468还可以通过USB接口与计算机或其他设备进行数据传输。

这些接口提供了更多的扩展选项，可以根据需要连接更多的外部设备进行使用。

第五部分：应用领域和适用场景（250字）ADR4468可以广泛应用于各种场合，如商业、工业、紧急救援和户外活动。

在商业领域，ADR4468可以用于扩大团队间的沟通范围，提高工作效率。

在工业领域，ADR4468可以在大型工厂和建筑工地等复杂环境下提供高效的沟通手段。

4148贴片规格书

CatalogAdd: 7F., No.66-10, Sec.2, Nankan Rd., Lujhu, Taoyuan County 338, Taiwan (R.O.C.)Tel: 886-3-311 9578 Fax: 886-3-311 9576HI-SINCERITYSEMICONDUCTORSurface Mount Switching Diode and Zener Diode-Feb-2005 Rev-OHI-SINCERITYSEMICONDUCTOR1. Switching DiodeHCDM4148....................................................................................................3~4 HCDM4448...................................................................................... .............5~6 HCD4148.......................................................................................................7~8 HCD4448..................................................................................................... 9~10 HSD4148....................................................................................................11~12 HSD4448....................................................................................................13~14 BASM16.....................................................................................................15~16 BAVM70.....................................................................................................17~182. Zener DiodeHZD5221B ~HZD5270B............................................................................19~233. Outline Dimension ..........................................................................................244. Marking Information .......................................................................................255. Mounting Pad ..................................................................................................266. Taping Specification................................................................................27~30VOLTAGE 75 Volts CURRENT 0.15 Ampere-Mar-2005 Rev-AELECTRICAL CHARACTERISTICS ( At T A = 25o C unless otherwise noted )NOTES :Maximum Average Reverse CurrentCHARACTERISTICSSYMBOLuAmps uAmpsuAmps nAmps Volts Maximum Instantaneous Forward Voltage at I F = 10 mAMAXIMUM RATINGES ( At T A = 25o C unless otherwise noted )V F I RHCDM41481. Measured at 1.0 MH Z and applied reverse voltage of 0 volts.2. Measured at applied froward current of 10 mA, reverse current of 1.0 mA, Reverse voltage of 6.0 volts and R L = 100 ohms.3. ESD sensitive product handling required.V R= 75V @TJ=25o C V R= 20V @TJ=25o C V R= 20V @TJ=150o C V R= 70V @TJ=150o C5.02530501.0HI-SINCERITYSEMICONDUCTORMar-2005 Rev-OVOLTAGE 75 Volts CURRENT 0.15 Ampere-Apr-2005 Rev-OELECTRICAL CHARACTERISTICS ( At T A = 25o C unless otherwise noted )NOTES :Maximum Average Reverse Current CHARACTERISTICSSYMBOLuAmps uAmps uAmpsnAmps Volts Maximum Instantaneous Forward VoltageMAXIMUM RATINGES ( At T A = 25o C unless otherwise noted )V FI RHCDM44481. Measured at 1.0 MH Z and applied reverse voltage of 0 volts.2. Measured at applied froward current of 10 mA, reverse current of 1.0 mA, Reverse voltage of 6.0 volts and R L = 100 ohms.3. ESD sensitive product handling required.V R= 75V @TJ=25o C V R= 20V @TJ=25o C V R= 20V @TJ=150o C V R= 70V @TJ=150o C5.0253050HI-SINCERITYSEMICONDUCTORI F = 100 mA I F = 5 mA 1.000.72Apr-2005 Rev-OVOLTAGE 75 Volts CURRENT 0.15 Ampere-Mar-2005 Rev-AELECTRICAL CHARACTERISTICS ( At T A = 25o C unless otherwise noted )NOTES :Maximum Average Reverse CurrentCHARACTERISTICSSYMBOLuAmps uAmpsuAmps nAmps Volts Maximum Instantaneous Forward Voltage at I F = 10 mAMAXIMUM RATINGES ( At T A = 25o C unless otherwise noted )V F I RHCD41481. Measured at 1.0 MH Z and applied reverse voltage of 0 volts.2. Measured at applied froward current of 10 mA, reverse current of 1.0 mA, Reverse voltage of 6.0 volts and R L = 100 ohms.3. ESD sensitive product handling required.V R= 75V @TJ=25o C V R= 20V @TJ=25o C V R= 20V @TJ=150o C V R= 70V @TJ=150o C5.02530501.0HI-SINCERITYSEMICONDUCTORMar-2005 Rev-OVOLTAGE 75 Volts CURRENT 0.15 Ampere-Apr-2005 Rev-OELECTRICAL CHARACTERISTICS ( At T A = 25o C unless otherwise noted )NOTES :Maximum Average Reverse Current CHARACTERISTICSSYMBOLuAmps uAmps uAmpsnAmps Volts Maximum Instantaneous Forward VoltageMAXIMUM RATINGES ( At T A = 25o C unless otherwise noted )V FI RHCD44481. Measured at 1.0 MH Z and applied reverse voltage of 0 volts.2. Measured at applied froward current of 10 mA, reverse current of 1.0 mA, Reverse voltage of 6.0 volts and R L = 100 ohms.3. ESD sensitive product handling required.V R= 75V @TJ=25o C V R= 20V @TJ=25o C V R= 20V @TJ=150o C V R= 70V @TJ=150o C5.0253050HI-SINCERITYSEMICONDUCTORI F = 100 mA I F = 5 mA 1.000.72Apr-2005 Rev-OVOLTAGE 75 Volts CURRENT 0.15 Ampere-SOD-123SOD-123Mar-2005 Rev-AELECTRICAL CHARACTERISTICS ( At T A = 25o C unless otherwise noted )NOTES :Maximum Average Reverse CurrentCHARACTERISTICSSYMBOLuAmps uAmpsuAmps nAmps Volts Maximum Instantaneous Forward Voltage at I F = 10 mAMAXIMUM RATINGES ( At T A = 25o C unless otherwise noted )Maximum Non-Repetitive Peak Reverse Voltage Maximum Working Peak Reverse Voltage Maximum DC Blocking Voltage Maximum Repetitive Peak Reverse Voltage Maximum RMS VoltageMaximum Average Forward Rectified Current Peak Forward Surge CurrentTypical Junction Capacitance between Terminal (Note 1)Maximum Operating and Storage Temperaturd RangeMaximum Thermal ResistanceV F I RHSD4148Maximum Reverse Recovery Time (Note 2)1. Measured at 1.0 MH Z and applied reverse voltage of 0 volts.2. Measured at applied froward current of 10 mA, reverse current of 1.0 mA, Reverse voltage of 6.0 volts and R L = 100 ohms.3. ESD sensitive product handling required.V R= 75V @TJ=25o C V R= 20V @TJ=25o C V R= 20V @TJ=150o C V R= 70V @TJ=150o C5.02530501.0HI-SINCERITYSEMICONDUCTOR0.045 (1.150.049 (1.25)0.036 (0.910.037 (0.93)Mar-2005 Rev-OVOLTAGE 75 Volts CURRENT 0.15 Ampere-SOD-123SOD-123Apr-2005 Rev-OELECTRICAL CHARACTERISTICS ( At T A = 25o C unless otherwise noted )NOTES :Maximum Average Reverse Current CHARACTERISTICSSYMBOLuAmps uAmps uAmpsnAmps Volts Maximum Instantaneous Forward VoltageMAXIMUM RATINGES ( At T A = 25o C unless otherwise noted )Maximum Non-Repetitive Peak Reverse Voltage Maximum Working Peak Reverse Voltage Maximum DC Blocking Voltage Maximum Repetitive Peak Reverse Voltage Maximum RMS VoltageMaximum Average Forward Rectified Current Peak Forward Surge CurrentTypical Junction Capacitance between Terminal (Note 1)Maximum Operating and Storage Temperaturd RangeMaximum Thermal ResistanceV FI RHSD4448Maximum Reverse Recovery Time (Note 2)1. Measured at 1.0 MH Z and applied reverse voltage of 0 volts.2. Measured at applied froward current of 10 mA, reverse current of 1.0 mA, Reverse voltage of 6.0 volts and R L = 100 ohms.3. ESD sensitive product handling required.V R= 75V @TJ=25o C V R= 20V @TJ=25o C V R= 20V @TJ=150o C V R= 70V @TJ=150o C5.0253050HI-SINCERITYSEMICONDUCTOR0.045 (1.150.049 (1.25)0.036 (0.910.037 (0.93)I F = 100 mA I F = 5 mA 1.000.72Apr-2005 Rev-OSOD-123SOD-123ELECTRICAL CHARACTERISTICS ( At T A = 25o C unless otherwise noted )NOTES :Maximum Average Reverse Current at V R= 75VCHARACTERISTICSSYMBOLUNITS 1.251.0uAmpsVolts Maximum Instantaneous Forward Voltage at I F= 150mA MAXIMUM RATINGES ( At T A = 25o C unless otherwise noted )RATINGSMaximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking VoltageMaximum Average Forward Rectified Current Peak Forward Surge Current Typical Junction Capacitance between Terminal (Note 1)Storage Temperature RangeMaximum Operating Temperature Range SYMBOL V RRM V RMS V DC I O C J T J V F I RT STGI FSM BASM16BASM16UNITS 100Volts Volts Volts Amps 70750.152.01.5+175-55 to +175Amps pF Maximum Reverse Recovery Time (Note 2)T RR 4.0nSecoC oC1. Measured at 1.0 MH Z and applied reverse voltage of 0 volts.2. Measured at applied froward current of 10mA and reverse voltage of 10.0 volts.3. ESD sensitive product handling required.at 1uSec.Mar-2004 Rev-O0.045 (1.150.049 (1.25)0.036 (0.910.037 (0.93)Mar-2004 Rev-OELECTRICAL CHARACTERISTICS ( At T A = 25o C unless otherwise noted )NOTES :Maximum Average Reverse Current at V R= 75VCHARACTERISTICS SYMBOL UNITS1.252.5uAmpsVolts Maximum Instantaneous Forward Voltage at I F= 150mAMAXIMUM RATINGES ( At T A = 25o C unless otherwise noted )RATINGSMaximum Recurrent Peak Reverse VoltageMaximum RMS VoltageMaximum DC Blocking VoltageMaximum Average Forward Rectified CurrentPeak Forward Surge CurrentTypical Junction Capacitance between Terminal (Note 1)Storage Temperature RangeMaximum Operating Temperature RangeSYMBOLV RRMV RMSV DCI OC JT JV FI RT STGI FSMBAVM70BAVM70UNITS75VoltsVoltsVoltsAmps53700.152.01.5+175-55 to +175AmpspF Maximum Reverse Recovery Time (Note 2)T RR 4.0nSeco Co C1. Measured at 1.0 MH Z and applied reverse voltage of 0 volts.2. Measured at applied froward current of 10mA and reverse voltage of 10.0 volts.3. ESD sensitive product handling required.at 1uSec.VOLTAGE 75 VoltsCURRENT 0.15 AmpereSOD-123SOD-123Mar-2004 Rev-O0.045 (1.150.049 (1.25)0.036 (0.910.037 (0.93)HI-SINCERITYSEMICONDUCTORMar-2004 Rev-OVOLTAGE 2.4V TO 91V Volts-SOD-123SOD-123Feb-2005 Rev-OHI-SINCERITYSEMICONDUCTOR0.045 (1.150.049 (1.25)0.036 (0.910.037 (0.93)ELECTRICAL CHARACTERISTICS ( At T A = 25o C unless otherwise noted )NOTES :Max. Instantaneous Forward Voltage at I F= 10mACHARACTERISTICSSYMBOL UNITS3500.9VoltsoC/WThermal Resistance Junction to Ambient MAXIMUM RATINGES ( At T A = 25o C unless otherwise noted )RATINGSZener Current ( see Table "Characteristics" )Max. Steady State Power Dissipation @T A =25o C Max. Operating Temperature Range Storage Temperature RangeSYMBOL-P D T J T STGR θJA V FVALUE MAX.--TYP.--MIN.UNITS -mW-5001.The JEDEC type numbers listd have a standaerd tolerance on the normal zener voltage of +10%, Suffix B=+5%.2. The zener impedance is derived from 1KHz AC voltage, which results when an AC current having an RMS value equal to 10% of DC zener current (I ZT or I ZK ) is superimposed on I ZT or I ZK . Zener impedance is measured at two points to insure a sharp knee on the breakdown curve to eliminate unstable units.3. Valid provided that electrodes at distance of 10mm from case are kept ambient temperature.4. Measured under thermal equilibrium and DC test conditions.5. The rating listd in the electrical characteristics table is maximum peak, non-repetitive, reverse surge current of 1/2 square wave or equivalent sine wave pulse of 1/120 second duration superimposed on the test current, I ZT , per JEDEC registration.-65 to +150-65 to +150oC oCFeb-2005 Rev-OTest Maximum Zener impedance Maximum Type Max Nom Min Volts Volts VoltsMaximumZener voltage currentreverse leakage current temperature coefficient regulatorV Z (V) @ I ZTcurrentZ ZT atat atat I ZT Z ZK I ZK I R at V R T A = 25o C T A = 50o C I ZT (mA)( ) ( )(mA)(uA)(V)θVZ (%/o C)I ZM (mA)TYPE1901821681621521381261151069789817673676155525045413835323028272524232119.118.216.816.215.113.8-0.085-0.085-0.080-0.080-0.075-0.070-0.065-0.060-0.055+0.030+0.030+0.038+0.038+0.045+0.050+0.058+0.062+0.065+0.068+0.075+0.076+0.077+0.079+0.082+0.082+0.083+0.084+0.085+0.086+0.086+0.087+0.088+0.089+0.090+0.091+0.091+0.0921111111112233.54566.56.5788.49.19.91011121314141617181921212325100100757550251510555555333333210.50.10.10.10.10.10.10.10.10.10.10.10.10.10.10.250.250.250.250.250.250.250.250.250.250.250.250.250.250.250.250.250.250.250.250.250.250.250.250.250.250.250.250.250.250.250.250.250.250.250.250.251200125013001400160016001700190020001900160016001600100075050050060060060060060060060060060060060060060060060060060060060070030303030292824232219171177568810172230131516171921232529333541444958202020202020202020202020202020202020202020209.59.08.57.87.47.06.66.25.65.25.04.64.54.23.82.2802.3752.5652.6602.8503.1353.4203.7054.0854.4654.8455.3205.7005.8906.4607.1257.7908.2658.6459.50010.4511.4012.3513.3014.2515.2016.1517.1018.0519.0020.9022.8023.7525.6526.6028.5031.352.42.52.72.83.03.33.63.94.34.75.15.66.06.26.87.58.28.79.11011121314151617181920222425272830332.5202.6252.8352.9403.1503.4653.7804.0954.5154.9355.3555.8806.3006.5107.1407.8758.6109.1359.55510.5011.5512.6013.6514.7015.7516.8017.8518.9019.9521.0023.1025.2026.2528.3529.4031.5034.65HZD5221B HZD5222B HZD5223B HZD5224B HZD5225B HZD5226B HZD5227B HZD5228B HZD5229B HZD5230B HZD5231B HZD5232B HZD5233B HZD5234B HZD5235B HZD5236B HZD5237B HZD5238B HZD5239B HZD5240B HZD5241B HZD5242B HZD5243B HZD5244B HZD5245B HZD5246B HZD5247B HZD5248B HZD5249B HZD5250B HZD5251B HZD5252B HZD5253B HZD5254B HZD5255B HZD5256B HZD5257BΩΩFeb-2005 Rev-OTest Maximum Zener impedance Maximum Type Max Nom Min Volts Volts VoltsMaximumZener voltage currentreverse leakage current temperature coefficient regulatorV Z (V) @ I ZTcurrentZ ZT atat atat I ZT Z ZK I ZK I R at V R T A = 25o C T A = 50o C I ZT (mA)( ) ( )(mA)(uA)(V)θVZ (%/o C)I ZM (mA)TYPE13.812.611.610.6+0.093+0.094+0.095+0.0952********.10.10.10.10.250.250.250.2570080090010007080931053.43.23.02.734.2037.0540.8544.653639434737.8040.9545.1549.35HZD5258B HZD5259B HZD5260B HZD5261B 9.78.911.6-+0.096+0.096+0.097+0.0973********.10.10.10.10.250.250.250.2511001300140014001251501701852.52.22.12.048.4553.2057.0058.905156606253.5558.8063.0065.10HZD5262B HZD5263B HZD5264B HZD5265B -+0.097520.10.2516002301.864.606871.40HZD5266B ----+0.098+0.098+0.099+0.099566268690.10.10.10.10.250.250.250.2517002000220023002703303704001.71.51.41.471.2577.9082.6586.457582879178.7586.1091.3595.55HZD5267B HZD5268B HZD5269B HZD5270BΩΩFeb-2005 Rev-OFeb-2005 Rev-OHI-SINCERITYSEMICONDUCTORLWTCItem L W T C06031.55±0.10(0.062±0.004)0.80±0.10(0.032±0.004)0.65±0.10(0.026±0.004)0.35±0.10(0.014±0.004)08052.00±0.20(0.080±0.008)1.25±0.20(0.062±0.004)0.85±0.10(0.034±0.004)0.45±0.20(0.018±0.008)12063.20±0.20(0.127±0.008)1.50±0.20(0.059±0.008)0.85±0.10(0.034±0.004)0.55±0.20(0.022±0.008)SOD1233.50±0.10(0.140±0.002)1.50±0.10(0.059±0.004)0.92±0.10(0.036±0.004)0.35±0.10(0.0137±0.004)Unit: mm(inch)Feb-2005 Rev-OHI-SINCERITYSEMICONDUCTORDevice has been marked indelibly and legibly as followCathodeAnodeTerminalsBody Direction indicatedPart No.Feb-2005 Rev-OHI-SINCERITYSEMICONDUCTORBCD SizeUnit: mmMounting pad layout:Layout A B C D 1.20.91.351.21.351.20805Micro Melf SOD-3231206Mini Melf SOD-1231.21.40.651.71.70.70.91.01.051.72.12.53.32.83.754.14.84.9RemarkDesign Suggestion0805Design Suggestion Mini MelfFeb-2005 Rev-OHI-SINCERITYSEMICONDUCTORDirection tape is pulledT 0T 1T 2Feb-2005 Rev-OHI-SINCERITYSEMICONDUCTORDirection tape is pulledT 0T 1T 2Feb-2005 Rev-OHI-SINCERITYSEMICONDUCTORDirection tape is pulledT 0T 1T 2Feb-2005 Rev-OHI-SINCERITYSEMICONDUCTORDirection tape is pulledT 0T 1T 2。

AO4466 SOIC-8 规格书推荐

Top View Bottom View D DD D SS G SymbolTyp Max 36406275R θJL1824Maximum Junction-to-Lead CSteady-State°C/WThermal CharacteristicsParameterUnits Maximum Junction-to-Ambient A Steady-State t ≤ 10s R θJA °C/W °C/W Maximum Junction-to-Ambient ASymbolMin TypMaxUnits BV DSS 30V 1T J =55°C5I GSS 100nA V GS(th) 1.5 2.12.6V I D(ON)64A 16.723T J =125°C24.33023.735m Ωg FS 17S V SD 0.751V I S2.4A C iss 298373448pF C oss 466788pF C rss 244158pF R g0.6 1.8 2.8ΩQ g (10V) 5.77.18.6nC Q g (4.5V) 2.73.54.2nC Q gs 1.2nC Q gd 1.6nC Gate Source Charge V GS =10V, V DS =15V, I D =10ATotal Gate Charge Gate Drain Charge Total Gate Charge DYNAMIC PARAMETERS V GS =0V, V DS =15V, f=1MHz SWITCHING PARAMETERS Gate resistanceV GS =0V, V DS =0V, f=1MHzR DS(ON)Static Drain-Source On-ResistanceForward Transconductance Diode Forward Voltagem ΩV GS =4.5V, I D =5AI S =1A,V GS =0VV DS =5V, I D =10A V GS =10V, I D =10AElectrical Characteristics (T J =25°C unless otherwise noted)STATIC PARAMETERS ParameterConditions I DSS µA V DS =30 V GS =0VZero Gate Voltage Drain Current On state drain currentI D =250µA, V GS =0V V GS =4.5V, V DS =5V Gate Threshold Voltage V DS =V GS I D =250µA V DS =0V, V GS = ±20V Gate-Body leakage current Drain-Source Breakdown Voltage Reverse Transfer Capacitance Maximum Body-Diode Continuous CurrentInput Capacitance Output Capacitancet D(on) 4.3ns t r 2.8ns t D(off)15.8ns t f 3ns t rr 8.410.512.6ns Q rr 3.6 4.5 5.4nC t rr 4.7 6.07.2ns Q rr5.36.68nCTHIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE.Turn-Off DelayTime V GS =10V, V DS =15V, R L =1.5Ω,R GEN =3ΩTurn-Off Fall TimeTurn-On DelayTime Body Diode Reverse Recovery Charge I F =10A, dI/dt=500A/µsI F =10A, dI/dt=500A/µs Turn-On Rise Time Body Diode Reverse Recovery TimeI F =10A, dI/dt=100A/µsBody Diode Reverse Recovery Charge I F =10A, dI/dt=100A/µsBody Diode Reverse Recovery TimeA: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment withT A =25°C. The value in any given application depends on the user's specific board design. B: Repetitive rating, pulse width limited by junction temperature.C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.D. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The SOA curve provides a single pulse rating.F. The current rating is based on the t ≤10s junction to ambient thermal resistance rating.G: L=100uH, V DD =0V, R G =0Ω, rated V DS =30V and V GS =10V Rev 9: May. 2012TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS0.010.11101E-050.00010.0010.010.11101001000Z θJ A N o r m a l i z e d T r a n s i e n t T h e r m a l R e s i s t a n c ePulse Width (s)Figure 12: Normalized Maximum Transient Thermal ImpedanceSingle PulseD=T on /TT J,PK =T A +P DM .Z θJA .R θJA R θJA =75°C/WT onTP DIn descending orderD=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse。

AO4476A SOIC-8 规格书推荐

TA=100°C
30
20 TA=125°C
10
0
0.000001
0.00001
0.0001
0.001
Time in avalanche, tA (s) Figure 9: Single Pulse Avalanche capability (Note
C)
10000
1000
ID (Amps)
1000.0
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz
920 1150 1380 pF 125 180 235 pF 60 105 150 pF 0.55 1.1 1.65 Ω
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
TA=25°C
Current
TA=70°C
Pulsed Drain Current C
Avalanche Current C
Avalanche energy L=0.1mH C
ID
IDM IAS, IAR EAS, EAR
TA=25°C Power Dissipation B TA=70°C
PD
Junction and Storage Temperature Range
TJ, TSTG
Maximum 30 ±20 15 12 110 27 36 3.1 2
-55 to 150

AO4468中文资料

SymbolTyp Max 31405975R θJL 1624Maximum Junction-to-Lead CSteady-State°C/WThermal Characteristics ParameterUnits Maximum Junction-to-Ambient A t ≤ 10s R θJA °C/W °C/W Maximum Junction-to-Ambient A Steady-State AO4468AO4468SymbolMin TypMaxUnits BV DSS 30V 0.0031T J =55°C5I GSS ±100nA V GS(th) 1.523V I D(ON)50A 1114T J =125°C172117.422m Ωg FS 19S V SD 0.731V I S4.5A C iss 9551200pF C oss 145pF C rss 112pF R g0.50.85ΩQ g (10V)1724nC Q g (4.5V)912nC Q gs 3.4nC Q gd 4.7nC t D(on)56.5ns t r 67.5ns t D(off)1925ns t f 4.56ns t rr 1921ns Q rr912nCTHIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE.Maximum Body-Diode Continuous CurrentInput Capacitance Output Capacitance Turn-On DelayTime DYNAMIC PARAMETERS V GS =10V, V DS =15V, I D =11.6ATotal Gate Charge Gate Drain Charge V GS =0V, V DS =15V, f=1MHz SWITCHING PARAMETERS Turn-On Rise Time Turn-Off DelayTime V GS =10V, V DS =15V, R L =1.30Ω, R GEN =3ΩTurn-Off Fall Timem ΩV GS =4.5V, I D =10AI S =1A,V GS =0V V DS =5V, I D =11.6AR DS(ON)Static Drain-Source On-ResistanceForward TransconductanceDiode Forward VoltageI DSS µA V DS =24V, V GS =0VV DS =0V, V GS = ±20V Zero Gate Voltage Drain Current Gate-Body leakage current Electrical Characteristics (T J =25°C unless otherwise noted)STATIC PARAMETERS ParameterConditions On state drain currentI D =250µA, V GS =0V V GS =4.5V, V DS =5V V DS =V GS I D =10mA Gate Threshold Voltage Drain-Source Breakdown Voltage Body Diode Reverse Recovery TimeBody Diode Reverse Recovery Charge I F =11.6A, dI/dt=100A/µsV GS =10V, I D =11.6AReverse Transfer Capacitance I F =11.6A, dI/dt=100A/µsTotal Gate Charge Gate Source Charge Gate resistanceV GS =0V, V DS =0V, f=1MHzA: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating.B: Repetitive rating, pulse width limited by junction temperature.C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.D. The static characteristics in Figures 1 to 6 are obtained using 80 µs pulses, duty cycle 0.5% max.E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The SOA curve provides a single pulse rating. Rev 0 : Apr 2006AO4468AO4468。

产品技术规格表A系列

℃
-23~19
型号
ADX300VAGHA
14+16HP
电源
3相 380V 50HZ
容量
制冷
kW
85.0
制热
kW
95.4
输入功率
制冷
kW
21.12
制热
kW
22.11
尺寸
W×H×D
mm
(1295×1695×765)×2
重量
kg
517
运转音
dB(A)
63
风量
m3/min
520
连接配管
液管
(Ф)mm
19.05
制冷
℃
-15~54
制热
℃
-23~19
型号
ADX160VAGHA
16HP
电源
3相 380V 50HZ
容量
制冷
kW
45.0
制热
kW
50.4
输入功率
制冷
kW
11.20
制热
kW
12.00
尺寸
W×H×D
mm
1295×1695×765
重量
kg
281
运转音
dB(A)
60
风量
m3/min
260
连接配管
液管
(Ф)mm
容量
制冷
kW
113.0
制热
kW
126.4
输入功率
制冷
kW
31.00
制热
kW
30.60
尺寸
W×H×D
mm
(1295×1695×765)×2
重量
kg
608
运转音

6448H;中文规格书,Datasheet资料

ebm-papst St.Georgen GmbH&Co.KGHermann-Papst-Straße1D-78112St.GeorgenPhone+49772481-0Fax+49772481-1309info2@Nominal dataType6448HNominal voltage VDC48Nominal voltage range VDC28..60Speed min-14000Power input W26.0Min.ambient temperature°C-20Max.ambient temperature°C55Air flow m3/h480Sound power level B7.1Sound pressure level dB(A)63ml=max.load·me=max.efficiency·fa=running at free air·cs=customer specs·cu=customer unitSubject to alterationsTechnical featuresGeneral description Particular design features:Optional Vario-Pro:Highly flexible software configuration for the fan ensures an easily customisablesolution to meet the individual requirements of your application.General features:Housing made of aluminium,impeller made of fibreglass-reinforced PA;housing with grounding lugfor M4x8screw(Torx).48V version incl.screws.Electronic commutation completely integrated.Protected against reverse polarity and locking.Electrical connection to flat plugs,3x0.5mm.Air exhaust over bars.Direction of rotation counter-clockwise seen on rotor.Mass:760g.Mass0.760kgDimensions172x150x51mmMaterial of impeller Fiberglass-reinforced PA plasticHousing material Aluminum.Housing with grounding lug for screw M4x8(TORX).Direction of air flow Air exhaust over barsDirection of rotation Left,looking at rotorBearing Ball bearingsLifetime L10at40°C70000h50000hLifetime L10at maximumtemperatureConnection line Flat plugs3.0x0.5mm.Motor protection Protected against reverse polarity and locking.Locked-rotor protection Electronic blocking protection,with electronic motor current limit in the startup phase and when therotor is blocked.Approval VDE,CSA,UL,CEProduct drawing LuCharts:Air flow分销商库存信息: EBM-PAPST6448H。

ARL4460金属分析仪参考手册新

ARL4460／FAA金属分析仪参考手册ARL4460/FAA型金属分析仪参考手册2004-10ARL4460／FAA金属分析仪参考手册1 ...........................................................................................................................................................................1.l 与标准的相符性 (5)1.2 安全 (6)1.3 文档 (6)l.3.l 用户文件 (7)1.3.2 工作文件 (7)2 (8)2.1 工作原理 (8)2.2 仪器结构 (9)2.3 分析程序和光学布置 (9)2.4 激发 (10)2.4.l 光源 (10)2.4.2 激发台 (10)2.4.2.l 氩气激发台 (10)2.4.2.2 激发台安全回路 (10)2.5 光谱仪 (10)2.6 电子柜 (12)2.7 计算机 (13)2.7.1 计算机配置 (13)2.7.1.l 视频显示 (13)2.7.l.2 键盘 (13)2.7.1.3 鼠标 (13)2.7.1.4 主机 (13)2.7.2打印机 (14)2.7.3 软件 (14)2.8 互连 (15)3 (16)3.l 仪器柜概貌 (16)3.2 单元和分组件 (18)3.3 激发 (21)3.3.1 激发台 (21)3.3.1.1 金属线材和小样品分析附件 (26)3.3.2 CCS电源 (27)3.4 电力分配柜 (28)3.5 电子柜 (29)3.5.1 Spark-DAT (32)3.6 35KHz电源柜和Bitbus接口 (33)3.7 真空系统 (34)3.7.1 适中真空用的标准系统 (34)3.7.2 高真空用的标准系统 (35)3.8 水冷装置 (36)3.9 氩气回路 (37)3.lO 恒温箱和光谱仪 (38)3.10.1 通用部分 (39)3.10.2 专用部分 (42)ARL4460／FAA金属分析仪参考手册3.10.2.1 反射辅助装置 (42)3.10.2.2 直射辅助装置 (43)4 (44)4.l 前言 (44)4.2 小结表 (44)4.2.1 ART 4460 (44)4.2.2 ARL FAA (45)4.3 分析电极 (46)4.3.1 大电极的清洗 (46)4.3.1.1 大电极的更换和调整 (46)4.3.2 针电极的更换 (47)4.3.2.1 针电极的调整 (47)4.4 激发台和火花室的清理 (48)4.4.l 圆盘、绝缘体和火花室的清理 (48)4.4.2 分析架和内部的清理 (49)4.4.2.l 拆卸 (49)4.4.2.2 清理 (51)4.4.2.2.l 分析架块状支座 (51)4.2.2.2.2 电极座 (52)4.4.2.2.3 电极 (52)4.4.2.2.4 分析架 (52)4.4.2.2.5 玻璃绝缘体 (52)4.4.2.2.6 硬质金属圆盘 (52)4.4.2.3 重装 (53)4.4.2.4 备注 (54)4.5 氩气出气口过滤器 (54)4.5.1 标准系统 (54)4.5.2 远紫外系统 (55)4.5.2.1 中间的油过滤器 (55)4.5.2.2 氩气出气口过滤器 (55)4.6 真空系统 (56)4.6.1 运中真空用的标准系统 (56)4.6.1.1 检查真空泵油液面高度 (56)4.6.1.2 更换油和真空泵垫圈 (56)4.6.2 高真空用的专用标准系统 (57)4.7 描迹检查 (57)4.7.1 直接描迹 (58)4.7.1.l 基本建议 (58)4.7.1.2 直接描迹 (59)4.7.2 积分描迹 (63)4.7.2.1 基本建议 (63)4.7.2.2 积分法测量迹线 (64)4.8 激发台门绞链涂油 (71)4.9 透镜清理 (71)4.9.l 过程 (71)4.lO 更换或清理滤尘器 (73)4.10.1 滤尘器的清理 (73)4.10.2 激发台过滤器 (74)4.11 检查换气扇 (74)ARL4460／FAA金属分析仪参考手册4.12 分析检查 (74)4.12.1 控样检查 (74)4.12.2 标准化检查 (74)4.13 备份 (75)4.14 附件 (75)4.14.1 Sircal氩气净化器 (75)A (76)A.1 取样-样品模 (76)A.1.1有色金属 (76)A.1.2 Fe、 Ni、Co基 (76)A.1.3 铸铁 (77)A.1.4 痕量元素 (77)A.1.5 SPEMIS 探头 (78)A.2表面制备－制样机 (78)A.2.l 砂轮磨样机 (78)A.2.2 表面磨床 (79)A.2.3 铣床或车床 (79)A.2.4 压力机 (80)A.2.5 感应炉 (80) (81)B.1 放样品 (81)B.2 多次测量 (81)B.3 样品固定板 (82) (83)C.1 样品固定板上的定位 (83)C.2 样品准备 (84)C.3 分析 (85)C.3.1小样品分析 (85)C.3.2 线材分析 (85)C.3.2.1在线材样品顶端分析 (85)C.3.2.2 在线材侧面分析 (87)C.3.2.3定位方向 (88)ARL4460／FAA金属分析仪参考手册1.这是ARL4460金属分析仪和FAA火花分析仪的参考手册；在本手册里，作为对操作手册的补充，您将看到有关仪器功能和一些非常规分析操作的更详细的内容。

4468场效应管参数

4468场效应管参数
2N4468场效应管参数主要包括：
①额定电压：根据用途有多种针对VDS、VGS的额定电压，如
VDS=75V、100V、150V，VGS=-20V；
②黄金比例电流：每个场效应管的电流黄金比例为IDSS/2，电流一
般为2mA、4mA、6mA；
③漏源电容：漏源电容(CDS)一般以一定的电容量进行区分，例如
5pF、8pF；
④源极门阻：源极门阻需要考虑出”最低的电流，高的截止频率”，RLG一般在50ohm~500ohm之间取值；
⑤频率：场效应管的最大截止频率一般为100KHz、200KHz、300KHz、400KHz；
⑥抗瞬变量：在抗瞬变量方面，2N4468有IPP、ISS等指标，此指标
要考虑场效应管在薄膜抗瞬变量时的表现；
⑦抗冲击：抗冲击方面，2N4468有抗冲击峰值电流和抗冲击截止电流，抗冲击能力越强，电路就会更加稳定。

手机项目产品规格书

支持
支持
不支持
支持
支持
不支持
支持
支持
支持
支持情景模式：标准、会议、
静音、户外；
支持不支持
需配置 T 卡实现此功能，支持大容量 T 卡
支持
设置
录像记事本预置游戏 PC camera PC 通讯
STK
安全设置 PIN 码
恢复出厂设置防盗功能话机锁开关机动画
支持不支持支持不支持不支持支持
画笔隐私功能英汉字典文本阅览器区号查询情景模式
U 盘模式
照像连拍录音
支持不支持支持支持支持支持支持
WAV
200 10 条内置短句支持支持支持支持支持支持支持不支持支持支持支持不支持
根据 flash 情况而定
50K 100 条支持 T-FLASH 卡
3个
容量
短信模板短信群发容量显示有效期设置状态报告设置存储空间设置存储已发信息设置语音信箱小区广播删除 (单条 /选择 /全部 ) 提取收件箱短信号码编辑短信时插入个人名片短信防火墙彩信（MMS）单条彩信最大容量
最大容量自动接收存储位置工具
闹钟计算器万年历铃声编辑世界时间
可列出 SP 供应商，以及功能
其他特色应用
三、产品基本功能介绍特征规格
基本功能铃声
语言 (所支持语言种类 /数量 ) 输入法
内置铃声和弦
MP3 播放 MP4 播放
扩展卡电话本
容量
查找
群组铃声单键拨号容量显示删除 (单条 /选择 /全部 ) 卡和手机之间复制电话本导入导出 IP 呼叫通话记录容量 (已接 /未接 /已拨 ) 未接来电已拨电话已接来电拒接电话删除 (单条 /全部 /选择 ) 通话计时通话计费在通话记录中可发送短信 /彩信 /电子邮件保存通话记录号码至电话本通话免提通话自动重拨来电归属地显示来电大头贴

SEFRAM 4466 4468 产品说明书

SEFRAM 4466SEFRAM 4466-4468SeframFUNCTION/ARBITRARY GENERATORSThe new SEFRAM 4466 and 4468 can generate standard (40MHz or 50MHz) or user-defined waveforms with crystal controlled sampling rates of up to 80MHz (4466) and 125MHz (4468), 14 bit vertical resolution and up to 1Mpoints (4466) 4M points (4468). The sampling rate can also be controlled by an external clock. All waveforms are internally generated with amplitudes to 10Vp-p into 50 Ω. An offset generator allows generation of signals with large offsets. A full range of triggering capabilities is available, including internal-external trigger source, gated and burst modes of operation. Two or more units can be parallel connected to produce multiple waveforms with adjustable phase.A 10MHz external reference clock lets you synchronize the unit for precise phase adjustment.EXTERNAL REFERENCEThe wide choice of build-in standard waveforms gives instant access to frequently used test signals. These stan-dard waveforms are: sine, triangle, square, ramps, pulses and DC. AM, FM and FSK modulation are available with pro-grammable internal or external signals.STANDART WAVEFORMSThe instrument can be remotely controlled by the build-in GP I B/I EEE-488.2 and RS-232C interfaces. All parameters,modes and functions are programmable and SCPI compati-ble.PROGRAMMINGA menu-driven front panel operation with a graphic easy-to-read LCD makes the SEFRAM 4466 and 4468 easy to ope-rate. Parameter changes and data entry can be made using the numerical keys or rotary knob. Waveform editing can be done from scratch or by modifying standard waveforms.Multiple waveforms can be stored in the instrument flash memory.• 50 MHz Sine and Square Waveforms (4468)• 40 MHz Sine and Square Waveforms (4466)• 125 MHz Sampling (4468), 80MHz Sampling (4466)• 4M-point Arbitrary Waveforms (4468)• 1M-point Arbitrary Waveforms (4466)• 14 bit Resolution• IEEE488.2 and RS-232CFor more information, contact our local distributor or us on+33 (0).4.77.59.36.81SEFRAM 4466-4468Function/arbitrary generators32, rue Edouard Martel • 42100 - St Etienne Direct sales phone :+33 (0).4.77.59.36.81Fax. +33. (0).4.77.57.23.23Web:www.sefram.fr•e-mail:***************Specifications subject to change without notice - FT 4468A00SeframSEFRAM 4466。

44 0.8W 灯珠 GM2BBxxQT4E规格书 13页

電子デバイス事業本部Product name Surface Mount LED形名GM2BB□□QT4EModel No.○ 本技術資料は弊社の著作権等に係る内容も含まれていますので、取り扱いには充分ご注意頂くと共に、本技術資料の内容を弊社に無断で複製しないようお願い申し上げます。

○ 本製品のご使用に際しては、本技術資料に記載された使用条件及び以下の注意事項を遵守願います。

本技術資料記載の使用条件あるいは以下の注意事項を逸脱した本製品の使用等に起因する損害に関して、弊社は一切その責を負いません。

（注意事項）①お客様が本技術資料の内容に基づき、お客様の商品のカタログ、取扱い説明書等を作成される場合には、本製品をお客様の商品に組み込んだ状態で、その合理的根拠の有無をご検証頂きますようお願い致します。

②本製品は原則として下記の用途に使用する目的で製造された製品です。

尚、下記の用途であっても、③に記載の各種安全装置に使用される場合は③の注意事項を遵守願います。

又、下記の用途であっても、それが④に記載の各機器を構成する場合はご使用にならないで下さい。

・OA機器・計測器・工作機器・A V機器・家電製品・通信機器（幹線以外）③特に高い信頼性が必要とされる下記の機器に本製品を使用される場合は、必ず事前に弊社販売窓口までご連絡頂くと共に、これらのシステム・機器全体の信頼性および安全性維持のためにお客様の責任において機器側のフェールセーフ設計や冗長設計等の適切な措置を講じて頂くようお願い致します。

・運送機器（航空機、列車、自動車等）の制御または各種安全性にかかわるユニット・大型電算機・交通信号機・ガス漏れ検知遮断機・防災防犯装置・その他各種安全装置等等④機能・精度等において極めて高い信頼性が要求される以下の機器にはご使用にならないで下さい。

・航空宇宙機器・通信機器（幹線）・原子力制御機器・生命維持にかかわる医療機器等⑤上記①､②､③､④のいずれに該当するか疑義のある場合は弊社販売窓口までご確認願います。

4862;4864;6268;6269;中文规格书,Datasheet资料

Pomona®All dimensions are in inches. Tolerances (except noted): .xx = ±.02” (,51 mm), .xxx = ± .005” (,127 mm).All specifications are to the latest revisions. Specifications are subject to change without notice.Registered trademarks are the property of their respective companies. Made in USA6/9/99Pomona ACCESS 90446 (800) 444-6785 or (425) 446-6010 SY/EH/LS More drawings available at C:\Laura Goldberg\FlukeDataSheet\d4862-64_6268-69_1_01.doc Page 1 of 1 Models 4862, 4864, 6268, 6269 Replacement Cover Screws For Phenolic and Shielded Aluminum BoxesSales: 800-490-2361 Fax: 888-403-3360 Technical Assistance: 800-241-2060FEATURES:• These screws are specifically designed forsecuring the covers on our phenolic, die castaluminum and extruded aluminum boxes.• Each screw is designed to fit a specificapplication.• All are made of high quality carbon steel with zincplating for the best corrosion resistance.Figure 1:Model 4864,#2-32 Self-Tapping PhillipsReplaces cover screws used in all die cast aluminumsize A, size B and Miniature boxes. Carbon steel with bluezinc plating.Figure 2: Model 4862,#4-40 UNC Flat Head PhillipsReplaces cover screws usedin all extruded aluminumalloy size F, G & H boxes. Carbon steel with blue zincplating.Figure 3: Model 6268, #4-40 UNC Binding HeadPhillipsReplaces cover screws used in die cast aluminumalloy, size C Boxes. Carbon steel with blue zinc platingFigure 4: Model 6269, #2-56 UNC Pan Head PhillipsReplaces cover screws used in phenolic moldedboxes. Carbon steel with blue zinc plating.ORDERING INFORMATION: Models 4862, 4864,6268 & 6269. Available in packages of 100 screws./分销商库存信息:POMONA486248646268 6269。

MIC4468ZWM;MIC4467ZN;MIC4468ZN;MIC4469YWM;MIC4468YWM;中文规格书,Datasheet资料

67 — NAND
68 — AND
69 — AND with 1 inverting input
**Pb-Free industrial grade PDIP available in MIC4468 & MIC4469 only.
Truth Table
Part No. MIC4467 (Each Driver)
Micrel, Inc.
to 5V of noise spiking (either polarity) occurs on the ground line. They can accept up to half an amp of inductive kickback current (either polarity) into their outputs without damage or logic upset.
Ordering Information
Part Number
Standard
Pb-Free
MIC44xxCN* MIC44xxZN*
MIC44xxCWM* MIC44xxZWM*
MIC44xxBN* MIC44xxYN*
MIC44xxBWM* MIC44xxYWM*
Temperature Range
Symbol
Parameter
Conditions
Min
Typ
Max
Units
INPUT
VIH VIL IIN OUTPUT
Logic 1 Input Voltage Logic 0 Input Voltage Input Current
0 ≤ VIN ≤ VS
2.4
1.3

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VDS=VGS ID=250µA
1.2 1.8 2.4
V
ID(ON)
On state drain current
VGS=10V, VDS=5V
50
A
RDS(ON) Static Drain-Source On-Resistance
VGS=10V, ID=10.5A
TJ=125°C
14
17
mΩ
20
24
VGS
Continuous Drain
TA=25°C
Current
TA=70°C
Pulsed Drain Current C
Avalanche Current C
Avalanche energy L=0.1mH C
ID
IDM IAS, IAR EAS, EAR
TA=25°C Power Dissipation B TA=70°C
ID=250µA, VGS=0V
30
V
IDSS
Zero Gate Voltage Drain Current
VDS=30V, VGS=0V
TJ=55°C
1 µA
5
IGSS
Gate-Body leakage current
VDS=0V, VGS=±16V
±10 µA
VGS(th) Gate Threshold Voltage
Top View
D D D D
SOIC-8 Bottom View
D G
G
S S
S
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
740 888 pF
110 145 pF
82 115 pF
0.5 1.1 1.7
Ω
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
15
nC
Qg(4.5V) Total Gate Charge
Qgs
Gate Source Charge
VGS=10V, VDS=15V, ID=10.5A
VGS=4.5V, ID=9A
18
23 mΩ
gFS
Forward Transconductance
VDS=5V, ID=10.5A
36
S
VSD
Diode Forward Voltage
IS=1A,VGS=0V
0.75 1
V
IS
Maximum Body-Diode Continuous Current
10
2
4
6
8
10
VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
IS (A)
1.0E+02
1.0E+01
40
1.0E+00
1.0E-01
125°C
1.0E-02 1.0E-03
25°C
1.0E-04
1.0E-05
0.0 0.2 0.4 0.6 0.8 1.0 1.2
4
A
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz
B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initialTJ=25°C.
3.5
ns
trr
Body Diode Reverse Recovery Time IF=10.5A, dI/dt=100A/µs
18
22
ns
Qrr
Body Diode Reverse Recovery Charge IF=10.5A, dI/dt=100A/µs
9
12 nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design.
2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
7.5
nC
2.5
nC
Qgd
Gate Drain Charge
3
nC
tD(on)
Turn-On DelayTime
5
ns
tr
Turn-On Rise Time
VGS=10V, VDS=15V, RL=1.45Ω,
3.5
ns
tD(off)
Turn-Off DelayTime
RGEN=3Ω
19
ns
tf
Turn-Off Fall Time
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min Typ Max Units
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
VSD (Volts) Figure 6: Body-Diode Characteristics (Note E)
Rev.7.0: July 2013

Page 3 of 5
AO4468
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS = 4.5V)
* RoHS and Halogen-Free Compliant
ESD Protected 100% UIS Tested 100% Rg Tested
30V 10.5A < 17mΩ < 23mΩ
PD
Junction and Storage Temperature Range
TJ, TSTG
Maximum 30 ±20 10.5 8.5 50 19 18 3.1 2
-55 to 150
Thermal Characteristics
Parameter
Symbol
Typ
Maximum Junction-to-Ambient A t ≤ 10s Maximum Junction-to-Ambient A D Steady-State
Figure 8: Capacitance Characteristics
ID (Amps)
1000.0
100.0
10.0
RDS(ON) limited
10µs 100µs
1.0
0.1
TJ(Max)=150°C TA=25°C
1ms 10ms
10s DC
0.0
0.01
0.1
1
10
100
VDS (Volts)
AO4468
30V N-Channel MOSFET
General Description
Product Summary
The AO4468 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is ideal for load switch and battery protection applications.