EM640FU16AS-45L中文资料(List Unclassifed)中文数据手册「EasyDatasheet - 矽搜」

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EM4-DINAV23AOR中文资料(List Unclassifed)中文数据手册「EasyDatasheet - 矽搜」

能源管理电能表与插件输出模块键入EM4-DIN第1类（有功电能） 2级（无功电能）三相多功能电能表背面照明液晶显示屏 3/DGT 瞬时变量读出8 DGT + 7/DGT 能读出系统和相位变量测量：W,WDMD 千瓦时,千乏：总能量测量千瓦时,千乏：部分能量测量按照EN61036和EN61268能量测量通过时间段能量测量（T1-T2-T3-T4）通过输入可选触点m 测量H O 和M,GAS 通过输入方式触点扭曲波形真有效值测量（电压/电流）两种基本模式：直接连接20（90）AAC,CT 5（10）,AAC 和VT 连接自供电（仅适用于某些型号）或辅助电源：24V,48V,115V,230V,50-60赫兹;18 to 60VDC, 77 to 143VDC防护等级（正面）：IP 40 正面尺寸：9 DIN 模块RS 422/485串口通过可选模块方式通过可选模块方式双脉冲输出报警输出（千瓦DMD ）通过可选模块方式数字输入时间带管理和H O 和煤气表产品描述三相电能表内置配置键焊盘;尤其适用于计量和能量除计量管理,并从水和气体米到来信号管理.房屋DIN 导轨或壁挂式安装,IP40（前端）防护等级.完全密封外壳.如果直接连接达90A,测量输入端子都适合用于电缆横仲从6到35毫米和灰区.仪器外壳特殊设计允许随时添加接口模块,已经安装仪器时也是如此.以下模块：-适用于所有版本：脉冲输出; - 只为版本与辅助电源：数字输入,RS485串口.如何订购Model 范围代码系统电源插槽A 插槽BEM4-DIN AV5 3 X X XX重要提示：从AV0至AV7模型可配备任何类型可用模块（插槽A 和B ）. 模型AV8和AV9只能用配"O"和"R"型模块.该AV8和AV9模型可以衡量即使所连接三相系统缺少一相参数.该AV2模式只适用于三相不平衡系统无中性.选型范围代码辅助电源：AV0:208V /20(90)AAC [3]AV1:400V /20(90)AAC [1]AV3:660V /20(90)AAC [2]AV4:208V /5(10)AAC [3]AV5:400V /5(10)AAC [1]AV6:100V /5(10)AAC [3]AV7:660V /5(10)AAC [2]自供电：AV2:220V /20(90)AAC [4]AV8:208V /20(90)AAC [1]AV9:400V/20(90)AAC [1]系统3:三相三相不平衡负载或无中线电源对于所有版本A:24VAC-15+10%, 50-60HzB:48VAC-15+10%, 50-60HzC:115VAC-15+10%, 50-60HzD:230VAC-15+10%, 50-60Hz4:18 to 60VDC 5:77到143VDC AV2,AV8和AV9只X:自供电400V(-20+15%, 50-60Hz)208V(-20+15%, 50-60Hz)220V(-10+15%, 50-60Hz)[3]联合国：-20 + 20％EM 4-DINDS1003插槽A （重发）X:O:NoneAO2900模块双集电极开路输出放.三种操作模式：两路脉冲输出（千瓦时及无功电能）;一个报警输出（千瓦DMD ）和一个脉冲输出（千瓦时或千乏）一个输出远程控制由串行端口和一个脉冲输出（千瓦时或千乏）AQ2940模块两个数字输入,管理水表,煤气表插槽A （重发）续.R:AO2910模块.一个继电器输出加一个集电极开路输出.操作模式,如模块AO2900插槽B （重发）只有具有A-B-C-D-4电源XX:S0:NoneAR2950模块RS422/485串行端口D:[1]联合国：-20 + 15％[2]联合国：-30 + 15％[4]联合国：-10 + 15％规格如有更改,恕不另行通知EM4-DIN输入规格输入数当前电压准确性（显示器,RS485）34Ib: 5A, Imax: 10AIb: 20A, Imax:90AUN：见"范围代码"上上一页从0.003Ib到0.2Ib：±(0.5%RDG +3DGT)从0.2Ib到套装：±(0.5%RDG +1DGT)在联合国范围：±(0,5% RDG + 1DGT)±0.1％RDG（50到60赫兹）±(1% RDG +1DGT). PF 1,0.1Ib Imax范围,在联合国范围内;PF 0.5L,PF 0.8C,0.2Ib至IMAX,在联合国范围内1级累计.以EN610362级累计.以EN61268Ib: 5A, Imax: 10A0.1Ib: 500mA,启动电流：20毫安联合国：见附表"系列代码"Ib: 20A, Imax: 90A0.1Ib: 2A,启动电流：80毫安联合国：见附表"系列代码"加速.为EN61036,EN61268谐波：10％）0（可达0.5吨）温度漂移采样率显示TypeInstantan.变量读出能源最大.和最小指示测量耦合类型波峰因数Ib 5AIb 20A电流过载5（10）A,10毫秒5（10）A,500毫秒5（10）A,永久20（90）A,10毫秒20（90）A,永久电压过载永久1秒输入阻抗400V(AV1-AV5-AV9)208V(AV0-AV4-AV8-AV2)660V(AV3-AV7)100V(AV6)5(10) A (AV4-AV5-AV6-AV7)20(90) A (AV0-AV1-AV3-AV8-AV9)20(90) A (AV2)频率200ppm/°C1000采样/秒@ 50Hz背面照明LCD3/DGT共有8 DGT + 7/DGT;部分：8 DGT + 7/DGT;最大. 1999年（99999999）,最低0电力,能源.真有效值测量失真波形.直接3（15A最大峰值）6（127A最大峰值）300A最大,@ 50Hz200A最大,@ 50Hz10A, @ 50Hz2700A最大,@ 50Hz90A, @ 50Hz1.2联合国2联合国720KΩ720KΩ1.97MΩ400KΩ50到60赫兹当前电压频率有功功率（在25℃±5℃,相对湿度 90%)能源（在25℃±5℃,相对湿度 90%)其他错误波形电压不对称磁感应高频电磁场配件运行接口模块规范RS422/RS485（根据要求）Type连接地址协议数据（双向）动态（只读）静态（只写）AR2950模块多点双向（静和动态变量）2或4线,最大距离1200米终止直接模块上255,由辅助键盘可选MODBUS/JBUS相位和系统变量：请参阅表"显示页面"所有编程数据,恢复能量,激活静态输出.储存能量（EEPROM）最大. 99.999.999千瓦时/千乏1个起始位,8个数据位,无奇偶校验,1个停止位9600比特/秒通过光电耦合器方法,2000 V产量测量输入2000 V输出电源输入数字输出（根据要求）AO2900模块被用作能量重发时,水和气,远程静态输出并报警.三个工作模式可选：两路脉冲输出（千瓦时及无功电能）;一个报警输出（千瓦DMD）和一个脉冲输出（千瓦时或千乏）;一个输出远程CON-由装置受控串行端口和一个脉冲输出（千瓦时或千乏）2从0.01至100个脉冲根据可编程所选择CT和VT比率集电极开路（NPN晶体管）V 1.2 VDC /最大.百毫安EM4-DINDS1003数据格式波特率隔离脉冲输出输出数量脉冲数输出类型2规格如有更改,恕不另行通知EM4-DIN接口模块规范（续）脉冲持续时间报警输出输出数量报警类型设定值调整滞后接通时间延迟响应时间输出类型隔离V30 VDC最大.220毫秒（ON） 220毫秒（OFF）据DIN438641报警器,报警下来.0至电源100％scale0至电源100％scale0到255秒700毫秒集电极开路（NPN晶体管）V 1.2 VDC /最大.百毫安V30 VDC最大.通过光电耦合器方法,2000 V输出测量输入,2000 V输出电输入.两者之间绝缘输出：功能继电器+集电极开路输出.像工作方式AO2900.其中静态输出+一个继电器输出,其它特性一样AO2900.只有继电器输出,其它特性一样AO2900.静态类型类似模块AO2900;继电器类型：SPDT,AC1, AC15: 1AAC @250VAC2000 V输出测量输入,2000 V输出数字输入（根据要求）电输入.两者之间绝缘输出：2000伏AQ2940模块四种工作模式可选：完全和部分能源米（千瓦时及无功电能）无需使用数字输入完全和部分能源米（千瓦时及无功电能）按时间周期管理(t-t-t-t);总能量米（千瓦时,千乏）和总"日间/夜间"气仪表;总能量米（千瓦时,千乏）,GAS和水表;220Hz最大50%0.1至100.0米/ 脉冲12V +辅助24VDC逻辑状态：OFF 2V, ON 10V15mA最大值1kΩ1kΩ,亲密接触100kΩ,开触点通过光电耦合器方法,2000 V数字输入测量输入,2000 V数字输入电输入.AO2910模块脉冲输出报警输出输出类型输入数输入频率占空比预分频器调整输入阻抗接触电阻隔离隔离软件功能密码最大数字代码.3位2防护护级别编程数据密码为"0",没有防护护密码从1到1000,所有数据都受防护护1到50001.0至199.9和200至1999注：CT比率* VT比mustnev er超过价值5000当前测量输入可以管理CT使用二级1A和5A（精度始终指至5A）显示变量每页最多4个变量第1页：千瓦时,千乏第2A：克瓦（T-t-t-t)k v arh (t-t-t-t)第2B：GAS米日间关税,GAS米晚上关税第2C：H O m,天然气米第3页：W第4页：W第5页：W第6页：W相序,串行通信状态,对电流测量输入错误连接.1lev el2lev el变压比CTVT错误供应规格自提供版本400V(-20% +15%, 50-60Hz)208V(-20% +15% , 50-60Hz)220V(-10+15%, 50-60Hz)EM4-DINDS1003辅助电源能源消耗230VAC -15 +10%, 50-60Hz115VAC -15 +10%, 50-60Hz48VAC; -15 +10%, 50-60Hz24VAC; -15 +10%, 50-60Hz18〜60VDC; 77到143VDC7VA规格如有更改,恕不另行通知3EM4-DIN一般规格操作温度存储温度安装类别隔离介电强度噪声抑制CMRR EMC Burst抗扰度辐射电磁场静电放电射频辐射0至+ 55°C（相对湿度90％,无冷凝40°C)IEC60664-1电能测量：-20至+ 60°CEN61036, EN61268.（相对湿度90％,无冷凝DIN4386440°C)脉冲输出猫. III（IEC60664）认证CE2000 V RMS所有输入之间/连接5（10）螺杆式,4 mm输出地电缆截面产品4000 V RMS1分钟连接20（90）一个螺杆式,最小/最大.电缆截面面产品6毫米/ 35 mm最小/最大.螺栓拧紧力矩2牛米/ 6米（90A输入）百分贝,48至62赫兹壳尺寸162.5 x 90 x 63 mm4kV/lev el 4 (EN61000-4-4)材料ABS, NORYL, PC自熄：UL 94 V-010V/m 26-1000MHz安装DIN导轨和墙壁(EN61000-4-3)防护等级正面：IP4015kV (EN61000-4-2)连接：IP20根据CISPR 14重量800克约. （包括包装）和CISPR 22脉冲电压（1.2/50μs）标准安全度量衡学8kV (EN61000-4-5)显示页面可显示变量No1变量2变量Notes1kWh kv arh2a千瓦时（T或T-t-t-t)无功电能（T或T-t-t-t）根据选择您所选择类型.2b日间GAS米夜GAS米为能源,可以选择以下操作模式：2c H O m GAS米t部分米或T-t-t-t多费率选择3W4W5W6W DMD =需求（从1到30分钟,产品分时间选择.）显示串行通信状态,相序,电流测量输入错误连接7二手计算公式相变量瞬时有效电压Note:RS422 / RS485"动态数据".发送变量是在列出上面表格和那些在WM22-DIN数据"显示页面"中提到表除：THD,总谐波失真,A（最大值）,W最大值,和VA max.瞬时有功功率系统变量等效系统电压消费记录瞬时功率因数(TPF)瞬时有效电流系统无功系统有功功率瞬时视在功率系统视在功率瞬时无功功率系统功率因数(TPF)Note:I =相（L1,L2或L3）P =有功功率Q =无功功率t, t=起始和结束时间消费记录点N =时间单位t=消耗时间间隔记录n, n=开始和结束离散消费记录时间点EM4-DINDS10034规格如有更改,恕不另行通知EM4-DIN可用型号TypeEM4-DIN AV9.3.X. EM4-DIN AV8.3.X. EM4-DIN AV2.3.x EM4-DIN AV1.3.D. EM4-DIN AV0.3.D. EM4-DIN AV3.3.D. EM4-DIN AV1.3.C. EM4-DIN AV0.3.C. EM4-DIN AV3.3.C. EM4-DIN AV1.3.B. EM4-DIN AV0.3.B. EM4-DIN AV3.3.B. EM4-DIN AV1.3.A. EM4-DIN AV0.3.A. EM4-DIN AV3.3.A. EM4-DIN AV5.3.D. EM4-DIN AV4.3.D. EM4-DIN AV7.3.D. EM4-DIN AV5.3.C. EM4-DIN AV4.3.C. EM4-DIN AV7.3.C. EM4-DIN AV5.3.B. EM4-DIN AV4.3.B. EM4-DIN AV7.3.B. EM4-DIN AV5.3.A. EM4-DIN AV4.3.A. EM4-DIN AV7.3.A. EM4-DIN AV6.3.D. EM4-DIN AV6.3.C. EM4-DIN AV6.3.B. EM4-DIN AV6.3.A. EM4-DIN AV1.3.4 / [5] EM4-DIN AV0.3.4 / [5] EM4-DIN AV3.3.4 / [5] EM4-DIN AV5.3.4 / [5] EM4-DIN AV4.3.4 / [5] EM4-DIN AV7.3.4 / [5] EM4-DIN AV6.3.4 / [5]输入400V L-L, 20(90)A208V L-L, 20(90)A220V L-L, 20(90)A400V L-L, 20(90)A208V L-L, 20(90)A660V L-L, 20(90)A400V L-L, 20(90)A208V L-L, 20(90)A660V L-L, 20(90)A400V L-L, 20(90)A208V L-L, 20(90)A660V L-L, 20(90)A400V L-L, 20(90)A208V L-L, 20(90)A660V L-L, 20(90)A400V L-L, 5(10)A208V L-L, 5(10)A660V L-L, 5(10)A400V L-L, 5(10)A208V L-L, 5(10)A660V L-L, 5(10)A400V L-L, 5(10)A208V L-L, 5(10)A660V L-L, 5(10)A400V L-L, 5(10)A208V L-L, 5(10)A660V L-L, 5(10)A100V L-L, 5(10)A100V L-L, 5(10)A100V L-L, 5(10)A100V L-L, 5(10)A400V L-L, 20(90)A208V L-L, 20(90)A660V L-L, 20(90)A400V L-L, 5(10)A208V L-L, 5(10)A660V L-L, 5(10)A100V L-L, 5(10)A电源自供电自供电自供电230VAC, 50-60Hz230VAC, 50-60Hz230VAC, 50-60Hz115VAC, 50-60Hz115VAC, 50-60Hz115VAC, 50-60Hz48VAC, 50-60Hz48VAC, 50-60Hz48VAC, 50-60Hz24VAC, 50-60Hz24VAC, 50-60Hz24VAC, 50-60Hz230VAC, 50-60Hz230VAC, 50-60Hz230VAC, 50-60Hz115VAC, 50-60Hz115VAC, 50-60Hz115VAC, 50-60Hz48VAC, 50-60Hz48VAC, 50-60Hz48VAC, 50-60Hz24VAC, 50-60Hz24VAC, 50-60Hz24VAC, 50-60Hz230VAC, 50-60Hz115VAC, 50-60Hz48VAC, 50-60Hz24VAC, 50-60Hz18-60VDC [77-143VDC]18-60VDC [77-143VDC]18-60VDC [77-143VDC]18-60VDC [77-143VDC]18-60VDC [77-143VDC]18-60VDC [77-143VDC]18-60VDC [77-143VDC]订货代码AG2200AG2201AG2244AG2202AG2203AG2204AG2205AG2206AG2207AG2208AG2209AG2210AG2211AG2212AG2213AG2214AG2215AG2216AG2217AG2218AG2219AG2220AG2221AG2222AG2223AG2224AG2225AG2226AG2227AG2228AG2229AG2230 [AG2237]AG2231 [AG2238]AG2232 [AG2239]AG2233 [AG2240]AG2234 [AG2241]AG2235 [AG2242]AG2236 [AG2243]可用模块Type集电极开路输出继电器+开放科尔.产量信道编码AO29002AO29102Type数字输入RS485串行输出通道21CodeAQ2940AR2950可能模块组合电源基本单元集电极开路输出继电器+开放科尔.产量自附：辅助附：插槽A插槽B插槽A插槽B电源基本单元数字输入RS485串行输出只有（*）,AV2自附：辅助附：插槽A插槽B插槽A插槽B(*)规格如有更改,恕不另行通知EM4-DINDS10035。

EM643FV16FU中文资料

Document Title256K x16 bit Super Low Power and Low Voltage Full CMOS Static RAMRevision HistoryRevision No. History Draft Date Remark0.0Initial Draft May 26 , 2003 Preliminary0.12’nd Draft Add Pb-free part number February 13 , 2004Emerging Memory & Logic Solutions Inc.IT Venture Tower Eastside 11F, 78, Karac-Dong, Songpa-Ku, Seoul, Rep.of Korea Zip Code : 138-160Tel : +82-2-2142-1759~1766 Fax : +82-2-2142-1769 / Homepage : The attached datasheets are provided by EMLSI reserve the right to change the specifications and products. EMLSI will answer to your questions about device. If you have any questions, please contact the EMLSI office.FEATURES•Process Technology : 0.18µm Full CMOS •Organization : 256K x 16 bit•Power Supply Voltage : 2.7V ~ 3.6V •Low Data Retention Voltage : 1.5V(Min.)•Three state output and TTL Compatible •Package Type : 44-TSOP2GENERAL DESCRIPTIONThe EM643FV16FU families are fabricated by EMLSI’s advanced full CMOS process technology. The families support industrial temperature range and Chip Scale Package for user flexibility of system design. The fami-lies also supports low data retention voltage for battery back-up operation with low data retention current.PRODUCT FAMILYProduct FamilyOperating TemperatureVcc Range SpeedPower DissipationPKG TypeStandby (I SB1, Typ.) Operating (I CC1.Max.) EM643FV16FU Industrial (-40 ~ 85o C)2.7V~3.6V551) /70ns1 µA 2)3 mA44-TSOP2Name FunctionName FunctionCS Chip select input Vcc Power Supply O E Output Enable input Vss GroundWE Write Enable input UB Upper Byte (I/O 9~16)A 0~A 17Address InputsLBLower Byte (I/O 1~8)I/O 1~I/O 16 Data Inputs/outputsNC No ConnectionR o w S e l e c tI/O Circuit Column SelectData Cont Data ContPre-charge CircuitMemory Array 2048 x 2048A 1A 2A 3A 4A 5A 6A 7A 0A 8A 9A 11A 12A 13A 14A 15A 16A 17W EO E U BLB C SI/O1 ~ I/O8I/O9 ~ I/O16V C CV SSControl LogicFUNCTIONAL BLOCK DIAGRAM1. The parameter is measured with 30pF test load.A 10PIN DESCRIPTION 1234567891011121314151644434241403938373635343332313029A4A3A2A1A0C S I/O1I/O2I/O3I/O4VCC VSS I/O5I/O6I/O7I/O8A5A6A7OE UB LB I/O16I/O15I/O14I/O13VSS V C C I/O12I/O11I/O10I/O944 - TSOP2171819202122282726252423WE A17A16A15A14A13NC A8A9A10A11A122. Typical values are measured at Vcc=3.3V, T A =25o C and not 100% tested.ABSOLUTE MAXIMUM RATINGS *Parameter Symbol Ratings Unit Voltage on Any Pin Relative to Vss V IN, V OUT-0.2 to Vcc+0.3(Max.4.0V)V Voltage on Vcc supply relative to Vss V CC-0.2 to 4.0V V Power Dissipation P D 1.0W Operating Temperature T A-40 to 85o C*Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. Functional operation should be restricted to recommended operating condition. Exposure to absolute maximum rating conditions for extended periods may affect reliability.FUNCTIONAL DESCRIPTIONCS OE WE LB UB I/O1-8I/O9-16Mode PowerH X X X X High-Z High-Z Deselected Stand byL H H X X High-Z High-Z Output Disabled ActiveL X X H H High-Z High-Z Output Disabled ActiveL L H L H Data Out High-Z Lower Byte Read ActiveL L H H L High-Z Data Out Upper Byte Read ActiveL L H L L Data Out Data Out Word Read ActiveL X L L H Data In High-Z Lower Byte Write ActiveL X L H L High-Z Data In Upper Byte Write ActiveL X L L L Data in Data In Word Write ActiveNote: X means don’t care. (Must be low or high state)DC AND OPERATING CHARACTERISTICSNOTES1. Typical values are measured at Vcc=3.3V, T A =25o C and not 100% tested.ParameterSymbol Test Conditions Min Typ Max Unit Input leakage current I LI V IN =V SS to V CC-1-1µA Output leakage current I LO CS=V IH or OE=V IH or WE=V IL , V IO =V SS to V CC -1-1µA Operating power supplyI CC I IO =0mA, CS=V IL , V IN =V IH or V IL --3mA Average operating currentI CC1Cycle time=1µs, 100% duty, I IO =0mA, CS<0.2V, V IN <0.2V or V IN >V CC -0.2V --3mAI CC2Cycle time = Min, I IO =0mA, 100% duty, CS=V IL, V IN =V IL or V IH 55ns --30mA 70ns--25 Output low voltage V OL I OL = 2.1mA --0.4V Output high voltage V OH I OH = -1.0mA2.4--V Standby Current (TTL)I SB CS=V IH , Other inputs=V IH or V IL --0.3mAStandby Current (CMOS)I SB1CS>V CC -0.2V, Other inputs=0~V CC(Typ. condition : V CC =3.3V @ 25o C)(Max. condition : V CC =3.6V @ 85o C)LL LF-11)12µARECOMMENDED DC OPERATING CONDITIONS 1)1. TA= -40 to 85o C, otherwise specified2. Overshoot: V CC +2.0 V in case of pulse width < 20ns3. Undershoot: -2.0 V in case of pulse width < 20ns4. Overshoot and undershoot are sampled, not 100% tested .ParameterSymbol Min Typ Max Unit Supply voltage V CC 2.7 3.3 3.6V GroundV SS 000V Input high voltage V IH 2.2-V CC + 0.22)V Input low voltageV IL-0.23)-0.6VCAPACITANCE 1) (f =1MHz, T A =25o C)1. Capacitance is sampled, not 100% testedItemSymbol Test ConditionMin Max Unit Input capacitance C IN V IN =0V -8pF Input/Ouput capacitanceC IOV IO =0V-10pFEM643FV16FU SeriesLow Power, 256Kx16 SRAMmerging Memory & Logic Solutions Inc.ParameterSymbol55ns 70nsUnitMin Max Min Max Read cycle time t RC 55-70-ns Address access time t AA -55-70ns Chip select to outputt CO -55-70ns Output enable to valid output t OE -25-35ns UB, LB acess time t BA 25 35ns Chip select to low-Z output t LZ 10-10-ns UB, LB enable to low-Z output t BLZ 5- 5 -ns Output enable to low-Z output t OLZ 5-5-ns Chip disable to high-Z output t HZ 020025ns UB, LB disable to high-Z output t BHZ 020025ns Output disable to high-Z output t OHZ 020025ns Output hold from address changet OH10-10-nsParameterSymbol55ns 70nsUnitMin Max Min Max Write cycle timet WC 55-70-ns Chip select to end of write t CW 45-60-ns Address setup timet AS 0-0-ns Address valid to end of write t AW 45-60-ns UB, LB valid to end of write t BW 45-60-ns Write pulse width t WP 40-55-ns Write recovery time t WR 0-0-ns Write to ouput high-Z t WHZ 020025ns Data to write time overlap t DW 25 30 ns Data hold from write time t DH 0-0-ns End write to output low-Zt OW5-5-nsREAD CYCLE (V cc =2.7 to 3.6V, Gnd = 0V, T A = -40o C to +85o C)WRITE CYCLE (V cc =2.7 to 3.6V, Gnd = 0V, T A = -40o C to +85o C)AC OPERATING CONDITIONSTest Conditions (Test Load and Test Input/Output Reference)Input Pulse Level : 0.4 to 2.2V Input Rise and Fall Time : 5nsInput and Output reference Voltage : 1.5V Output Load (See right) : CL = 100pF+ 1 TTL CL 1) = 30pF + 1 TTL 1. Including scope and Jig capacitance 2. R 1=3070Ω, R 2=3150Ω3. V TM =2.8VCL 1)V TM 3)R 12)R 22)t AddressCSUB,LBOEData Outt COt OHt B At O EHigh-ZTIMING WAVEFORM OF READ CYCLE(2) (WE = V IH )Data ValidOLZt t LZAAHZt RCAddresst AA Data Validt OHPrevious Data ValidTIMING WAVEFORM OF READ CYCLE(1). IL IH, or/and =V IL )Data OutTIMING DIAGRAMSNOTES (READ CYCLE)1. t HZ and t OHZ are defined as the outputs achieve the open circuit conditions and are not referanced to output voltage levels.2. At any given temperature and voltage condition, t HZ (Max.) is less than t LZ (Min.) both for a given device and from device to device interconnection.WR (4)t WC AddressCS UB,LB WE Data in Data outt CW(2)t AWt BWt WP(1)t AS(3)High-Zt DW t DHHigh-Zt OWt WHZData UndefinedTIMING WAVEFORM OF WRITE CYCLE(1) (WE CONTROLLED)Data Validt WCAddressCS UB,LB WE Data in Data outt CW(2)t WR(4)t AWt BWt WP(1)t DW t DHTIMING WAVEFORM OF WRITE CYCLE(2) (CS CONTROLLED)tAS(3)High-Z High-ZData Validt AddressCSUB,LBWEData in Data outt CW (2)W R (4)t A W t B Wt W P (1)t DWDHTIMING WAVEFORM OF WRITE CYCLE(3) (UB, LB CONTROLLED)High-ZHigh-ZData ValidA S NOTES (WRITE CYCLE)1. A write occurs during the overlap(t WP ) of low CS and low WE. A write begins when CS goes low and WE goes low with asserting UB or LB for single byte operation or simultaneously asserting UB and LB for double byte operation. A write ends at the earliest transition when CS goes high and WE goes high. The t WP is measured from the beginning of write to the end of write.2. t CW is measured from the CS going low to end of write.3. t AS is measured from the address valid to the beginning of write.4. t WR is measured from the end or write to the address change. t WR applied in case a write ends as CS or WE going high.DATA RETENTION CHARACTERISTICSNOTES 1. See the I SB1 measurement condition of datasheet page 4.2. Typical values are measured at T A =25o C and not 100% tested.ParameterSymbolTest ConditionMinTyp 2)MaxUnitV CC for Data Retention V DR I SB1 Test Condition (Chip Disabled) 1)1.5- 3.6V Data Retention CurrentI DR V CC =1.5V, I SB1 Test Condition(Chip Disabled) 1)-0.5-µAChip Deselect to Data Retention Time t SDR See data retention wave form0--nsOperation Recovery Time t RDRt RC--V cc 2.7V2.2V V DRCS GNDDATA RETENTION WAVE FORMUnit: millimeters PACKAGE DIMENSIONEM643FV16FU SeriesLow Power, 256Kx16 SRAMmerging Memory & Logic Solutions Inc.1. EMLSI Memory2. Device Type3. Density 5. Technology 8. Version 9. Packages 10. Speed7. Orgainzation1. Memory Component2. Device Type6 ------------------------ Low Power SRAM7 ------------------------ STRAM 3. Density1 ------------------------- 1M2 ------------------------- 2M 4 ------------------------- 4M 8 ------------------------- 8M 16 ----------------------- 16M 32 ----------------------- 32M 64 ----------------------- 64M4. Mode Option 0 -------- Dual CS 1 -------- Single CS2 -------- Multiplexed Address3 -------- Single CS with LB,UB (tBA=tOE)4 -------- Single CS with LB,UB (tBA=tCO)5 -------- Dual CS with LB,UB (tBA=tOE)6 -------- Dual CS with LB,UB (tBA=tCO)5. TechnologyBlank ------------------ CMOSF ------------------------ Full CMOS 6. Operating Voltage Blank ------------------- 5VV ------------------------- 2.7V~3.6V U ------------------------- 3.0V S ------------------------- 2.5V R ------------------------- 2.0V P ------------------------- 1.8V4. Option 11. Power 7. Orginzation8 ---------------------- x8 bit 16 ---------------------- x16 bit 32 ---------------------- x32 bit8. VersionBlank ----------------- Mother Die A ----------------------- First revision B ----------------------- Second revision C ----------------------- Third revision D ----------------------- Fourth revision E ----------------------- Fifth revision F ----------------------- Sixth revision 9. PackageBlank ---------------------- FPBGAS ---------------------------- 32 sTSOP1 T ---------------------------- 32 TSOP1 U ---------------------------- 44 TSOP2 W ---------------------------- Wafer10. Speed45 ---------------------- 45ns 55 ---------------------- 55ns 70 ---------------------- 70ns 85 ---------------------- 85ns 10 --------------------- 100ns 12 --------------------- 120ns11. PowerLL ---------------------- Low Low PowerLF ---------------------- Low Low Power (Pb-free) L ---------------------- Low PowerS ---------------------- Standard Power元器件交易网。

EM640FV16F系列256Kx16位超低功耗低电压全CMOS静态RAM产品说明书

Document Title256K x16 bit Super Low Power and Low Voltage Full CMOS Static RAMRevision HistoryRevision No. History Date Remark0.0-.Initial Draft May262003Preliminary0.1-.Add Pb-free part number Feb.1320040.2-.I SB1(Max.) changed from 12uA to 6uA.Mar.3120080.3-.Add 45ns part specification.Apr.22009-.I SB1(Typ.) changed from 1uA to 0.25uA.-.I SB1(Max.) changed from 6uA to 4uA.-.Memory Function Guide updated in the last page.Apr.72009Release1.0-.EM640FV16F(KGD), EM640FV16F series & EM640FV16FUseries are unified to EM640FV16F Family.Emerging Memory & Logic Solutions Inc.3F Korea Construction Financial Cooperative B/D, 301-1 Yeon-Dong, Jeju-Si, Jeju-Do, Rep.of Korea Zip Code : 690-717Tel : +82-64-740-1700 Fax : +82-64-740-1750 / Homepage : The attached datasheets are provided by EMLSI reserve the right to change the specifications and products. EMLSI will answer to your questions about device. If you have any questions, please contact the EMLSI office.PRODUCT FAMILY1. “xx” represents speed.2. Typical values are measured at Vcc=3.3V, T A =25o C and not 100% tested.Product FamilyOperating Temperature Vcc RangeSpeedPower DissipationPKG Type Standby (I SB1, Typ.)Operating (I CC1.Max.)EM640FV16F Industrial (-40 ~ 85o C)2.7 ~3.6 V 45/55/70 ns0.25 µA 2)3 mAKGDEM640FV16F - xx 1)LF VFBGA-48 EM640FV16FU - xx 1)LF44-TSOP2FEATURES•Process Technology : 0.18µm Full CMOS •Organization : 256K x 16 bit•Power Supply Voltage : 2.7V ~ 3.6V •Low Data Retention Voltage : 1.5V(Min.)•Three state output and TTL Compatible •Package Type : VFBGA-48, 44-TSOP2GENERAL DESCRIPTIONThe EM640FV16F families are fabricated by EMLSI’s advanced full CMOS process technology. The families support industrial temperature range and Chip Scale Package for user flexibility of system design. The families also supports low data retention voltage for battery back-up operation with low data retention current.R o w S e l e c tI/O Circuit Column SelectData ContData ContPre-charge CircuitMemory Array 2048 x 2048A1A2A3A4A5A6A7A0A8A9A11A12A13A14A15A16A17WE OE UB LB CS1DQ0 ~ DQ7DQ8 ~ DQ15VCCVSSControl LogicA10FUNCTIONAL BLOCK DIAGRAMCS2PIN DESCRIPTIONName FunctionName FunctionCS1, CS2Chip Select inputs V CC Power Supply OE Output Enable input V SS GroundWE Write Enable input UB Upper Byte (DQ8~DQ15)A0~A17 Address inputs LB Lower Byte (DQ0~DQ7)DQ0~DQ15Data inputs/outputsNCNo ConnectionPIN CONFIGURATIONSVFBGA-48 : Top view(ball down)123456A LB OE A0A1A2CS2B DQ8UB A3A4CS1DQ0C DQ9DQ10A5A6DQ1DQ2D VSS DQ11A17A7DQ3VCCE VCC DQ12 NC A16DQ4VSSF DQ14DQ13A14A15DQ5DQ6G DQ15NC A12A13WE DQ7HNCA8A9A10A11NC1234567891011121314151644434241403938373635343332313029A4A3A2A1A0CS1DQ0DQ1DQ2DQ3VCC VSS DQ4DQ5DQ6DQ7A5A6A7OE UB LB DQ15DQ14DQ13DQ12VSS VCC DQ11DQ10DQ9DQ844 - TSOP2171819202122282726252423WE A17A16A15A14A13CS2A8A9A10A11A1244 - TSOP2 : Top viewABSOLUTE MAXIMUM RATINGS 1)1. Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. Functional operation should be restricted to recommended operating condition. Exposure to absolute maximum rating conditions for extended periods may affect reliability.FUNCTIONAL DESCRIPTIONNOTE : X means don’t care. (Must be low or high state)ParameterSymbol Ratings Unit Voltage on Any Pin Relative to Vss V IN , V OUT-0.2 to 4.0V Voltage on Vcc supply relative to Vss V CC -0.2 to 4.0V Power Dissipation P D 1.0WOperating TemperatureT A-40 to 85oCCS1CS2OE WE LB UB DQ0~7DQ8~15Mode Power H X X X X X High-Z High-Z Deselected Stand by X L X X X X High-Z High-Z Deselected Stand by X X X X H H High-Z High-Z Deselected Stand by L H H H L X High-Z High-Z Output Disabled Active L H H H X L High-Z High-Z Output Disabled Active L H L H L H Data Out High-Z Lower Byte Read Active L H L H H L High-Z Data Out Upper Byte Read Active L H L H L L Data Out Data Out Word Read Active L H X L L H Data In High-Z Lower Byte Write Active L H X L H L High-Z Data In Upper Byte Write Active LHXLLLData InData InWord WriteActiveRECOMMENDED DC OPERATING CONDITIONS 1)1. TA= -40 to 85o C, otherwise specified2. Overshoot: VCC +2.0 V in case of pulse width < 20ns3. Undershoot: -2.0 V in case of pulse width < 20ns4. Overshoot and undershoot are sampled, not 100% tested.CAPACITANCE 1) (f =1MHz, T A =25o C)1. Capacitance is sampled, not 100% tested.DC AND OPERATING CHARACTERISTICS1. Typical values are measured at Vcc=3.3V, T A =25o C and not 100% tested.ParameterSymbol Min Typ Max Unit Supply voltage V CC 2.7 3.3 3.6V GroundV SS 000V Input high voltage V IH 2.2 -V CC + 0.22)V Input low voltageV IL-0.23)-0.6VItemSymbol Test ConditionMin Max Unit Input capacitance C IN V IN =0V -8pF Input/Ouput capacitanceC IOV IO =0V-10pFParameterSymbol Test Conditions Min Typ Max Unit Input leakage current I LI V IN =V SS to V CC-1-1µA Output leakage current I LO CS 1=V IH or CS 2=V IL or OE=V IH or WE=V IL or LB=UB=V IH V IO =V SS to V CC-1-1µA Operating power supplyI CC I IO =0mA, CS 1=V IL , CS 2=WE=V IH , V IN =V IH or V IL --3mA Average operating currentI CC1Cycle time=1µs, 100% duty, I IO =0mA,CS 1<0.2V, LB<0.2V or/and UB<0.2V, CS 2>V CC -0.2V, V IN <0.2V or V IN >V CC -0.2V--3mAI CC2Cycle time = Min, I IO =0mA, 100% duty,CS 1=V IL , CS 2=V IH, LB=V IL or/and UB=V IL , V IN =V IL or V IH 45ns --35mA55ns --3070ns--25 Output low voltage V OL I OL = 2.1mA--0.4V Output high voltage V OH I OH = -1.0mA2.4--V Standby Current (TTL)I SBCS 1=V IH , CS 2=V IL , Other inputs=V IH or V IL --0.3mAStandby Current (CMOS)I SB1CS 1>V CC -0.2V, CS 2>V CC -0.2V (CS 1 controlled) or 0V<CS 2<0.2V (CS 2 controlled), Other inputs = 0~V CC(Typ. condition : V CC =3.3V @ 25oC) (Max. condition : V CC =3.6V @ 85o C)LL LF-0.25 1)4µAAC OPERATING CONDITIONSTest Conditions (Test Load and Test Input/Output Reference)Input Pulse Level : 0.4 to 2.2V Input Rise and Fall Time : 5nsInput and Output reference Voltage : 1.5VOutput Load (See right) : CL 1) = 100pF+ 1 TTL(70ns) CL 1) = 30pF + 1 TTL(45ns/55ns)1. Including scope and Jig capacitance2. R 1=3070Ω, R 2=3150Ω3. V TM =2.8V4. CL = 5pF + 1 TTL (measurement with tLZ, tOLZ, tHZ, tOHZ, tWHZ)READ CYCLE (V cc =2.7 to 3.6V, Gnd = 0V, T A = -40o C to +85o C)WRITE CYCLE (V cc =2.7 to 3.6V, Gnd = 0V, T A = -40o C to +85o C)ParameterSymbol45ns 55ns70nsUnitMin Max Min Max Min Max Read cycle time t RC 45-55-70-ns Address access time t AA -45-55-70ns Chip select to output t CO1, t CO2-45-55-70ns Output enable to valid output t OE -20-25-35ns UB, LB acess time t BA 45 55 70ns Chip select to low-Z output t LZ1, t LZ210-10-10-ns UB, LB enable to low-Z output t BLZ 5-5-5-ns Output enable to low-Z output t OLZ 5-5-5-ns Chip disable to high-Z output t HZ1, t HZ2020020025ns UB, LB disable to high-Z output t BHZ 020020025ns Output disable to high-Z output t OHZ 020020025ns Output hold from address changet OH10-10-10-nsParameterSymbol45ns 55ns70nsUnitMin Max Min Max Min Max Write cycle timet WC 45-55-70-ns Chip select to end of write t CW1, t CW235-45-60-ns Address setup time t AS 0-0-0-ns Address valid to end of write t AW 35-45-60-ns UB, LB valid to end of write t BW 35-45-60-ns Write pulse width t WP 35-40-55-ns Write recovery time t WR 0-0-0-ns Write to ouput high-Z t WHZ 0202025nsData to write time overlap t DW 25 25 30 ns Data hold from write time t DH 0-0-0-ns End write to output low-Zt OW5-5-5-nsCL 1)V TM 3)R 12)R 22)TIMING WAVEFORM OF READ CYCLE(2) (WE = V IH )t RCAddresst AA Data Validt OHPrevious Data ValidTIMING WAVEFORM OF READ CYCLE(1) (Address Controlled, CS=OE=V IL , WE=V IH, UB or/and LB =V IL )Data OutTIMING DIAGRAMSNOTES (READ CYCLE)1. t HZ1,2 and t OHZ are defined as the outputs achieve the open circuit conditions and are not referenced to output voltage levels.2. At any given temperature and voltage condition, t HZ1,2(Max.) is less than t LZ1,2(Min.) both for a given device and from device to device interconnection.t RCAddressCS1CS2UB,LBOEData Outt CO1,2t OHt BAt OEHigh-Zt BHZt OHZData Validt OLZt BLZ t LZ1,2t AAt HZ1,2TIMING WAVEFORM OF WRITE CYCLE(1)(WE Controlled)TIMING WAVEFORM OF WRITE CYCLE(2) (CS1 Controlled)t WC AddressCS1 CS2 UB,LB WE Data in Data outt CW1(2)t WR(4)t AWt BWt WP(1)t DW t DH tAS(3)High-Z High-ZData Validt WR(4)t WCAddressCS1CS2 UB,LB WE Data in Data outt CW1,2(2)t AWt BWt WP(1)t AS(3)High-Zt DW t DHHigh-Zt OWt WHZData UndefinedData ValidTIMING WAVEFORM OF WRITE CYCLE(3)(CS2 Controlled)t WC AddressCS1CS2 WE Data in Data outt CW2(2)t WR(4)t AWt WP(1)t DW t DH High-Z High-ZData Validt AS(3)TIMING WAVEFORM OF WRITE CYCLE(4) (UB, LB Controlled)NOTES (WRITE CYCLE)1. A write occurs during the overlap(t WP ) of low CS1 a high CS2 and low WE. A write begins at the lastest transition among CS1 goes low, CS2 goes high and WE goes low. A write ends at the earliest transition when CS1 goes high, CS2 goes high and WE goes high. The t WP is measured from the beginning of write to the end of write.2. t CW is measured from the CS1 going low to end of write.3. t AS is measured from the address valid to the beginning of write.4. t WR is measured from the end or write to the address change. t WR applied in case a write ends as CS1 or WE going high.t WCAddressCS1CS2UB,LBWEData in Data outt CW1,2(2)t WR (4)t AW t BWt WP (1)t DWt DHHigh-ZHigh-ZData Validt AS (3)DATA RETENTION CHARACTERISTICSNOTES1. See the I SB1 measurement condition of datasheet page 5.2. Typical values are measured at T A =25o C and not 100% tested.ParameterSymbolTest ConditionMinTyp 2)MaxUnitV CC for Data Retention V DR I SB1 Test Condition (Chip Disabled) 1)1.5- 3.6V Data Retention CurrentI DR V CC =1.5V, I SB1 Test Condition (Chip Disabled) 1)-0.5-µAChip Deselect to Data Retention Time t SDR See data retention wave form0--nsOperation Recovery Timet RDRt RC--DATA RETENTION WAVE FORMt SDRt RDRData Retention ModeCS1 > Vcc-0.2VV cc 2.7V2.2V V DRCS1, LB / UBGNDt SDRt RDRData Retention ModeV cc 2.7V CS2V DR 0.4V GNDCS2 < 0.2VPACKAGE DIMENSION44 - TSOP2 (0.8mm pin pitch)Unit : millimeters / inchesAB CD E F G H654321DVFBGA 48 BALLS (6X7X1 0.75mm ball pitch)M Min.NOR.Max.A ---1A10.220.32A20.21 REF A30.45 REF b 0.32 5.250.42D 6 BSCE 7 BSC e 0.75 BSC D10.35 BSC E15.25 BSCNOTES.1). DIMENSION b IS MEASURED AT THE MAXIMUM SOLDER BALL DIAMETER, PARALLEL TO DATUM PLANE Z.2). DATUM Z (SEATING PLANE) IS DEFINED BY THE SPHERICAL CROWNS OF THE SOLDER BALLS.3). PARALLELISM MESUREMENT SHALL EXCLUDE ANY EFFECT OF MARK ON TOP SURFACE OF PACKAGE.DETAIL KA1 CORNERUnit: millimetersA1 CORNERXE Y0.1 ZE17X ee/2e/25X eD148X b 1)0.15 M Z X Y 0.08 M ZDETAIL KM0.08 ZZ0.1 ZAA1(A2)(A3)SEATING PLANE2)3)MEMORY FUNCTION GUIDE1. Memory Component8. VersionBlank---------------Mother die2. Device Type A ---------------2 nd generation 6---------------Low Power SRAM B ---------------3 rd generation 7---------------STRAM C ---------------4 th generation C ---------------CellularRAM D ---------------5 th generation E ---------------6 th generation3. Density F ---------------7 th generation 1--------------- 1MG ---------------8 th generation 2--------------- 2M 4--------------- 4M 9. Package8--------------- 8M Blank---------------KGD, FBGA 16--------------- 16M S ---------------32 sTSOP132--------------- 32M T ---------------32 TSOP164--------------- 64M U ---------------44 TSOP228---------------128MV ---------------32 SOP 4. Option 10. Speed 0---------------Dual CS 45--------------- 45ns 1---------------Single CS 55--------------- 55ns 60--------------- 60ns 5. Technology 70--------------- 70ns F ---------------Full CMOS 85--------------- 85ns 90--------------- 90ns 6. Operating Voltage 10---------------100ns T ---------------5.0V 12---------------120nsV ---------------3.3V U ---------------3.0V 11. Power S ---------------2.5V LL ---------------Low Low PowerR ---------------2.0V LF ---------------Low Low Power(Pb-free & Green)P ---------------1.8V L ---------------Low PowerS ---------------Standard Power7. Organization 8--------------- X8 bit 16---------------X16 bit 32---------------X32 bitEMX XX XXX XX XX -XX XX1. EMLSI Memory2. Device Type 11. Power3. Density 10. Speed4. Function 9. Package5. Technology 8. Version6. Operating Voltage7. Organization。

新西兰软启动EM×4产品说明书

新西兰软启动EM×4产品说明书
一、使用条件：
海拔高度〈2000m环境温度0到40℃
相对湿度〈95%
有沼气、煤尘爆炸性混合物
无显著破坏绝缘的气体或蒸汽的环境
二、主要功能特点
1、核心件全部采用BENSHAW公司生产的全套产品，微处理器、检测模块、保护模块，具有技术先进，功能齐全，性能稳定，抗干扰能力强，运行可靠等特点
2、采用先进的电力电子元器件实现电流、速度的双闭环控制，具有软启动、软停止、突跳启动脉冲、起动检测、RS485通讯等功能，能满足风机、水泵、胶带输送机、刮板输送机等不同负载对象的控制要求。

3、真正的可控软起动、软停止，参数连续可调，其中软起时间0.3到900S、起始电压20%到100%Ue，限流1到8le、停止时间0到180S，用户可以根据负荷情况控制电机安“S”曲线或预先给定的曲线平滑起动、停止。

另外，由于软起动器有外接PC接口，因此各类参数的设定可以用操作面板参数设定键实现，也可以通过PC 接口进行更为详尽的参数设置，以满足要求更高的场合。

4、通过控制电机的端电压，避免了高起动转矩和起动电流的峰值。

一方面可以使工作机械不受三相交流电机起动过程中过大的加速转矩作用，另一方面也，使供电系统免受过大起动电流冲击的作用。

对加速转矩进行一定的限制与控制。

B-640资料

Installation, Operation and Maintenance Procedures
When mounting the loudspeaker please ensure that it is re-assembled in the same manner in which it was received. Install outer ring into the hole by bending down 4 metal strips. Use nail / screw to prevent the ring from turning. Connect cable to terminal. Screw the loudspeaker grill clockwise into fixed position. For optimum performance, always use the correct voltage / power and operate within the frequency limits as stated. Take care when loudspeaker is energized (100 V). This loudspeaker is supplied with a 2 year warranty against defective workmanship. Most of our products are available in different colours, impedances and power ratings.
元器件交易网
B-640(T)
N-3770 Kragerø NORWAY Phone: ........ (47) 35 98 56 00 Fax: ............ (47) 35 98 56 10 E-mail: .............. dnh@dnh.no Web-site: ........www.dnh.no

Affymetrix 640 GeneChip 混合化炉说明书

G ENE C HIP® H YBRI DIZATI ON OV EN 640(110V & 220V M O DE LS)For research use onlyNot for diagnostic proceduresAffymetrix ConfidentialCopyright © 1999 Affymetrix, Inc. All rights reserved. Affymetrix, GeneChip, and the Affymetrixlogo are trademarks used by Affymetrix, Inc.P/N 700281, rev. 1GeneChip Hybridization Oven 640 Owner’s Manual i. . . . .. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .Contents GeneChip® Hybridization Oven 640 Owner’s ManualSafety. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1Customer Support Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .4Intended Use . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .5Unpacking the GeneChip Hybridization Oven 640. . . . . . . . . . . . . . . . . . . .5Setting up the GeneChip Hybridization Oven 640 . . . . . . . . . . . . . . . . . . . .5Control Panel of the GeneChip Hybridization Oven. . . . . . . . . . . . . . . . . . .6Operating the GeneChip Hybridization Oven 640 . . . . . . . . . . . . . . . . . . . .8GeneChip Hybridization Oven 640 Specifications . . . . . . . . . . . . . . . . . . .11Ordering and Technical Support Information . . . . . . . . . . . . . . . . . . . . . . .12ii GeneChip Hybridization Oven 640 Owner’s Manual P/N 700281, rev. 1P/N 700281, rev. 1GeneChip Hybridization Oven 640 Owner ’s Manual 1G ENE C HIP ® H YBRIDIZATION O VEN 640 . . . . .. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .O WNER ’S M ANUAL. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .S A F E T Y This manual contains information which must be read and understoodbefore using the equipment. When you come to an area which has one of the following symbols, pay particular attention and make certain to heed the safeguard.This symbol indicates a potential hazard which may cause serious injury or loss of life. Important safety information will follow.This symbol indicates a potential hazard to you or to the equipment.Important information that tells how to prevent damage to the equipment or how to avoid causes of minor injuries will follow.WARNINGCAUTIONG E N E C H I P ® H Y B R I D I Z A T I O N O V E N 640 O W N E R ’S M A N U A L Safety2GeneChip Hybridization Oven 640 Owner ’s ManualP/N 700281, rev. 1General Safety SummaryReview the following safety precautions to avoid injury and to preventdamage to this product or any products connected to it. To avoid potentialhazards, use this product only as specified.Only qualified personnel should perform service procedures.T o A v o i d F i r e o r P e r s o n a l I n j u r y•Use Proper Power Cord .Use only the power cord and plug specified for this product and certifiedfor the country of use.•Ground the Product .This product is grounded through the grounding conductor of the powercord. To avoid electrical shock, the grounding conductor must beconnected to earth ground.•Observe All Electrical Ratings .To avoid fire or shock hazard observe all further ratings informationbefore making connections to the product.•Do Not Operate Without Covers .DO NOT operate this product with covers or panels removed.•Use Proper Fuse .Use only the fuse type and rating specified for this product.•Avoid Exposed Circuitry .DO NOT touch exposed connections and components when power ispresent.•Do Not Operate With Suspected Failures .If you suspect there is damage to this product, have it inspected by. . . . .G E N E C H I P ® H Y B R I D I Z A T I O N O V E N 640 O W N E R ’S M A N U A L Safety P/N 700281, rev. 1GeneChip Hybridization Oven 640 Owner ’s Manual3qualified service personnel.•Do Not Send Your Instrument Elsewhere For Service Or Attempt To Service It Yourself . To protect your warranty and ensure safe operation, the instrument should be serviced only by Affymetrix or its representatives. If the instrument is not working correctly, please contact your Affymetrix Technical Support Representative.•Do Not Operate in Wet or Damp Conditions.•Do Not Operate in an Explosive Atmosphere.•Keep Product Surfaces Clean and Dry.•Provide Proper Ventilation . Refer to the manual ’s installation instructions for details on installing the product so it has proper ventilation.Terms on the Product The following terms may appear on the product:DANGER - indicates an injury hazard immediately accessible as you read the marking WARNING - indicates an injury hazard not immediately accessible as you read the marking CAUTION - indicates a hazard to property including the productG E N E C H I P ® H Y B R I D I Z A T I O N O V E N 640 O W N E R ’S M A N U A L Customer Support Information4GeneChip Hybridization Oven 640 Owner ’s ManualP/N 700281, rev. 1Symbols on the ProductThe following symbols may appear on the product:CAUTION - Refer to manualCAUTION - Hot surface. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .C U S T O M E R S U P P O R T I N F O R M A T I O NUnited States:Affymetrix, Inc.3380 Central ExpresswaySanta Clara, CA 95051Telephone Toll free: 888-DNA-CHIP; or 888-362-2447; or 408-731-5503Fax: 408-481-0435Europe:Affymetrix UK Limited7200 The QuorumOxford Business Park NorthOxfordOX4 2JZUnited KingdomTel: +44 (0)7000 785 803Fax:+44 (0)7000 785 804E-Mail:**********************. . . . .G E N E C H I P ® H Y B R I D I Z A T I O N O V E N 640 O W N E R ’S M A N U A L Intended UseP/N 700281, rev. 1GeneChip Hybridization Oven 640 Owner ’s Manual5. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I N T E N D E D U S E The GeneChip Hybridization Oven 640 is for research use only. It is notintended for diagnostic procedures.. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .U N P A C K I N G T H E G E N E C H I P H Y B R I D I Z A T I O N O V E N 640Carefully remove the oven and accessories from the shipping container.Use proper lifting techniques or a lifting aid to prevent injury (see NIOSHGuide for Manual Lifting ). If there are any signs of damage duringshipping, immediately notify Affymetrix Technical Support. If possible,save the shipping container for future transit requirements.. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .S E T T I N G U P T H E G E N E C H I P H Y B R I D I Z A T I O N O V E N 640Locate the oven on a stable, level surface capable of holding a minimum of100 lbs. (45.5 Kg). Once the oven is in place, it should be levelled using theadjustable feet. The oven should be located with a minimum clearance of2 inches (5.1 cm) on each side, 2 inches (5.1 cm) on the back, and3 inches(7.6 cm) on the top.The 110 V unit is supplied with a three-prong electrical plug, and should beplugged into a properly grounded electrical outlet. The 220V unit issupplied with a three conductor power cord without plug. The appropriateplug (not supplied) certified for the country of use should be attached to thepower cord in accordance with local regulations.G E N E C H I P ® H Y B R I D I Z A T I O N O V E N 640 O W N E R ’S M A N U A L Control Panel of the GeneChip Hybridization Oven6GeneChip Hybridization Oven 640 Owner ’s ManualP/N 700281, rev. 1CA U T I O NThe power supply cord is used as the main disconnect device. Ensure thatthe socket outlet is located and installed near the equipment and is easilyaccessible.A T T E N T I O NLe cordon d ’alimentation est utilise ’ comme interrupteur general. La prisede courant doit etre situe ’e ou installe ’e a proximite ’ du materiel et etrefacile d ’acce ’s.A C H T U N GZur sicheren Trennung des Ger ätes vom Netz ist der Netzstecker zu ziehen.Vergewissern Sie sich, da ß die Steckdose leicht zug änglich ist.. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .C O N T R O L P A N E L O F T H E G E N E C H I P H Y B R ID I Z A T I O N O VE NThe control panel instrument contains 6 items:•SPEED CONTROL knob (controls speed of rotation of carouselbetween 0 and 80 RPM).•SPEED CONTROL DISPLAY (displays the speed of rotation of thecarousel)CAUTION. . . . .G E N E C H I P ® H Y B R I D I Z A T I O N O V E N 640 O W N E R ’S M A N U A L Control Panel of the GeneChip Hybridization OvenP/N 700281, rev. 1GeneChip Hybridization Oven 640 Owner ’s Manual7•JOG button (moves carousel from one bottle position to the next tofacilitate adding and removing GeneChip Cartridge Carriers).Note: JOG button will not operate if SPEED CONTROL is set at “0”.•POWER switch (turns on main power; must be in ON [I] position forHEAT switch to be activated. The JOG button can only be activated withPOWER switch in the ON [I] position).•HEAT switch turns on heat as controlled by TEMP CONTROL.•TEMP CONTROL controls temperature when HEAT switch is in ONposition.The TEMP CONTROL is extremely easy to operate. There are 2 displaysand 6 buttons. The bottom red display is the “set ” temperature and the topgreen display is the actual temperature. The 6 buttons control the “set ”temperature, one button to increase and one button to decrease each of thethree digits. The temperature can be set anywhere between 00.0° and95.0° C.It is recommended that the maximum temperature setting not exceed 70° C.Also for good performance, the temperature setting should be at least 5° Cabove room temperature.For example, to set the temperature at 45.2° C, set the first digit (on the leftside) to “4” using the + (increase) and - (decrease) left hand pair of buttons;CAUTIONG E N E C H I P ® H Y B R I D I Z A T I O N O V E N 640 O W N E R ’S M A N U A L Operating the GeneChip Hybridization Oven 6408GeneChip Hybridization Oven 640 Owner ’s ManualP/N 700281, rev. 1then set the second digit to “5” using the middle set of buttons; and finallyset the third decimal digit to “2” using the right hand set of buttons. If theset temperature is higher than the actual temperature, the heater willimmediately come on and the temperature will rapidly rise to the settemperature with virtually no over shoot. The practical temperature range isambient to 70° C. Since there is no refrigerator mechanism in thisinstrument, the chamber cannot be cooled below ambient temperature.While the chamber temperature can be heated to 95.0° C, prolongedtemperatures above 60° C have been shown to have deleterious effects onGeneChip Cartridges.. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .O P E R A T I N G T H E G E N E C H I P H Y B R I D I Z A T I O N O V E N 6401Loading GeneChip cartridges into the GeneChip Cartridge Carrier:Eight (8) GeneChip cartridges can be loaded into each GeneChip CartridgeCarrier. GeneChip Cartridge Carriers are included as accessories with eachoven. The GeneChip Cartridge Carrier is “keyed ” such that the GeneChipcartridges can be loaded only one way. Additional Cartridge Carriers canbe purchased from Affymetrix.2Loading the GeneChip Cartridge Carrier into the oven:Up to eight (8) Carriers can be loaded into the oven. The Carrier is pushedinto the slots facing outwards, away from the shaft. The Carrier is pushedinto the slots until a “click ” is heard and the Carrier is captured.. . . . .G E N E C H I P ® H Y B R I D I Z A T I O N O V E N 640 O W N E R ’S M A N U A L Operating the GeneChip Hybridization Oven 640P/N 700281, rev. 1GeneChip Hybridization Oven 640 Owner ’s Manual9It is recommended that the user confirm the capture of the carrier by gentlyattempting to withdraw the Carrier. If the Carrier can be withdrawn, it was not properly captured and the Carrier loading process must be repeated.It is recommended that Carriers should be loaded in even numbers with each pair of carriers placed 180° apart across the shaft to maintain balance. If loading an odd number of Carriers (1,3,5,7) an empty Carrier should be loaded to balance the carousel.When the POWER is ON (I) the JOG button is operable at all times if the SPEED CONTROL knob is set above “0” EVEN WHEN THE DOOR IS OPEN . The user must keep all hands and fingers away from the carousel when operating the JOG button during loading and unloading of Carriers.3Turn the POWER switch to the ON (I) position.The power switch must be ON before the HEAT switch can be activated 4The oven door must be closed and locked before carousel will rotate!CAUTION CAUTION WARNINGG E N E C H I P ® H Y B R I D I Z A T I O N O V E N 640 O W N E R ’S M A N U A L Operating the GeneChip Hybridization Oven 64010GeneChip Hybridization Oven 640 Owner ’s ManualP/N 700281, rev. 15Use the SPEED CONTROL knob to set the rotation speed of the carouselas recommended in the GeneChip assays. The range is 0-80 RPM.For hybridization, a rotation speed of 60 RPM is commonly used.6Turn the HEAT switch to the ON (I) position.You can now set the temperature as required using the TEMP CONTROLas described in the CONTROL PANEL section above. If the “set ”temperature is higher than the chamber temperature, the oven will heatrapidly to the “set ” temperature. The controller has been programmed toslow down the rate of heating as the chamber temperature approaches the“set ” temperature, so there is very little overshoot.7To unload the Carriers from the oven, the rotation of the carousel can bestopped by setting the SPEED CONTROL to “0” or by simply openingthe oven door.The carousel can then be rotated manually or by using the JOG button tomove the position of the Carrier to be unloaded. The Carrier is removedfrom the carousel by grasping the large flange and giving a sharp pull onthe Carrier unlocking it from the capture mechanism. The Carrier can thenbe completely removed by sliding it from the carousel.. . . . .G E N E C H I P ® H Y B R I D I Z A T I O N O V E N 640 O W N E R ’S M A N U A L GeneChip Hybridization Oven 640 SpecificationsP/N 700281, rev. 1GeneChip Hybridization Oven 640 Owner ’s Manual11. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .G E N E C H I P H Y B R I D I Z A T I O N O V E N 640 S P E C I F I C A T I O N SPhysical Dimensions:Height19 inches Width18 inches Depth15 inches Weight 50 pounds (22.68 Kg)Power Requirements:Input Voltage90V - 132V @ 47 hz - 65 hz (110V Model)190V - 264V @ 47 hz - 65 hz (220 Model)Input Power less than 1000 VA (110 V, 220 V Models)Environmental Requirements:Operating Temperature Range15° C to 30°Operating Humidity range 15% to 85% Relative HumidityPerformance Requirements:Carousel Rotation Speed0 - 80 RPM Oven Setpoint RangeAmbient + 5° C to 70° C Oven Temperature Precision±0.4° C at Calibration Setpoint Oven Temperature Accuracy ±2.0° from display temp over range of 30° C to 60° CRegulatory Requirements :The Oven meets applicable CSA standards for North America (C22.2 No. 1010).The oven meets applicable IEC standards for safety (IEC 1010-1).The oven meets applicable directives (LVD and EMC) for the European Union CE Mark (EN 55011:Emissions, EN 61000-4-2:ESD, EN 61000-4-3:Radiated Immunity, EN 61000-4-4:EFT/B, EN 61010-1:Low Voltage).The oven is Year 2000 Compliant.G E N E C H I P ® H Y B R I D I Z A T I O N O V E N 640 O W N E R ’S M A N U A L Ordering and Technical Support Information12GeneChip Hybridization Oven 640 Owner ’s ManualP/N 700281, rev. 1. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . OR D E R I N G A N D T E C H N I C A L S U P P O R T I N F O R M A T I O NFor technical inquiries, contact your technical support team:TRADEMARKSGeneChip ®, Affymetrix ®,, and aretrademarks used by Affymetrix, Inc.GeneArray ™ is a U.S. trademark of Hewlett-Packard Company.North AmericaEurope Affymetrix Inc.3380 Central ExpresswaySanta ClaraCA 95051USATel: 888-DNA-CHIP (888-362-2447)Fax: 408-481-0435E-mail:********************** Affymetrix UK Limited 7200 The Quorum Oxford Business Park North Oxford OX4 2JZ United Kingdom Tel: +44 (0)7000 785 803Fax:+44 (0)7000 785 804Amersham Pharmacia Biotech Ltd.Amersham Place Little Chalfont Buckinghamshire, HP7 9NA England Tel: +44-(0) 1494-543755Fax: +44-(0) 1494-543278Email: ************************.. . . . .G E N E C H I P ® H Y B R I D I Z A T I O N O V E N 640 O W N E R ’S M A N U A L Ordering and Technical Support Information P/N 700281, rev. 1GeneChip Hybridization Oven 640 Owner ’s Manual13LIMITED LICENSEPROBE ARRAYS, INSTRUMENTS, SOFTWARE, AND REAGENTS ARE LICENSED FOR RESEARCH USE ONLY. NO RIGHT TO MAKE, HA VE MADE, OFFER TO SELL, SELL, OR IMPORT OLIGONUCLEOTIDE PROBE ARRAYS OR ANY OTHER PRODUCT IN WHICH AFFYMETRIX HAS PATENT RIGHTS IS CONVEYED BY THE SALE OF PROBE ARRAYS, INSTRUMENTS, SOFTWARE, OR REAGENTS HEREUNDER. THIS LIMITED LICENSE PERMITS ONLY THE USE OF THE PARTICULAR PRODUCT(S) THAT THE USER HAS PURCHASED FROM AFFYMETRIX.COPYRIGHT©1999 Affymetrix, Inc. All rights reserved.。

EM120中文资料(List Unclassifed)中文数据手册「EasyDatasheet - 矽搜」

* 如MAX232 为RS232,MAX485 为RS485 等.
LED线路
#1 #2 #21 #22 EG EY L3 (SG) L4 (SR)
输出输出输出输出绿色以太网状态LED 黄色以太网状态指示灯
LED输出3, LED输出4,
应用固件
绿色状态指示灯红色状态指示灯
行功能定义
示于
blue
into
The 应用固件 EM120 与供应,目前在其第三代（"Release3"）,变成EM120 到用于串口设备连接到以太网（TCP / IP）网络串行设备服务器.
该EM120 应用固件可以通过模块串行升级端口或以太网端口.串行升级由一个所谓便利 "服务"固件EM120 内.显示器无法进行升级.网路升级依赖于应用固件itself-有一个自I提升算法监控固定
芯片中文手册,看全文,戳
EM120以太网到串行模块
该EM120 是以太网模块板载安装.模块硬件包括：没有集成 110BaseT以太网端口（标准以太网磁性模块）,一个串行端口（CMOS电平）与一些附加generalpurpose I / O线, 和一个内部处理器,其固件充当以太网和串行端口之间桥梁.该模块以太网 "方"直接连接到一个标准以太网磁性电路（如CYL,20F001N）或RJ45 连接器与集成磁.串行"面"接口直接与大多数微控制器,微处理器,UART接口等串行端口引脚从硬件角度来看,EM120 可以被视为适合于运行各种网络和串行通信相关应用程序通用平台.它是应用固件,而不是硬件,使该EM120 大部分功能.
芯片中文手册,看全文,戳
The 应用固件在EM120 映射某些串行端口功能上通用I / O插脚式这些功能将在本主题顶部蓝色显示在表中.例如,P5 是通用输入/输出,但应用固件可以被设置为打开该线到串行端口RTS输出.

BA6406F-E2中文资料

Appendix
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design.

BC640-016G;中文规格书,Datasheet资料

BC640-016GHigh Current Transistors PNP SiliconFeatures•This is a Pb−Free DeviceMAXIMUM RATINGSRating Symbol Value Unit Collector-Emitter Voltage V CEO−80Vdc Collector-Base Voltage V CBO−80Vdc Emitter-Base Voltage V EBO−5.0Vdc Collector Current − Continuous I C−0.5AdcTotal Device Dissipation @ T A = 25°C Derate above 25°C PD6255.0mWmW/°CTotal Device Dissipation @ T C = 25°C Derate above 25°C P D 1.512WmW/°COperating and Storage JunctionTemperature RangeT J, T stg−55 to +150°C THERMAL CHARACTERISTICSCharacteristic Symbol Max Unit Thermal Resistance, Junction−to−Ambient R q JA200°C/W Thermal Resistance, Junction−to−Case R q JC83.3°C/W Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.*For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.COLLECTOR31EMITTERSee detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet.ORDERING INFORMATIONSTRAIGHT LEADBULK PACKTO−92CASE 29STYLE 14MARKING DIAGRAMSBC640−16AYWW GGA= Assembly LocationY= YearWW= Work WeekG= Pb−Free Package(Note: Microdot may be in either location)ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted)Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICSCollector − Emitter Breakdown Voltage(I C = −10 mAdc, I B = 0)V(BR)CEO−80−−VdcCollector − Base Breakdown Voltage(I C = −100 m Adc, I E = 0)V(BR)CBO−80−−VdcEmitter − Base Breakdown Voltage(I E = −10 m Adc, I C = 0)V(BR)EBO−5.0−−VdcCollector Cutoff Current(V CB = −30 Vdc, I E = 0)(V CB = −30 Vdc, I E = 0, T A = 125°C)I CBO−−−−−100−10nAdcm AdcON CHARACTERISTICS (Note 1)DC Current Gain(I C = −5.0 mAdc, V CE = −2.0 Vdc)(I C = −150 mAdc, V CE = −2.0 Vdc)(I C = −500 mA, V CE = −2.0 V)h FE2510025−−−−250−−Collector − Emitter Saturation Voltage(I C = −500 mAdc, I B = −50 mAdc)V CE(sat)−−0.25−0.5VdcBase − Emitter On Voltage(I C = −500 mAdc, V CE = −2.0 Vdc)V BE(on)−−−1.0VdcDYNAMIC CHARACTERISTICSCurrent Gain − Bandwidth Product(I C = −50 mAdc, V CE = −2.0 Vdc, f = 100 MHz)f T−150−MHzOutput Capacitance(V CB = −10 Vdc, I E = 0, f = 1.0 MHz)C ob−9.0−pFInput Capacitance(V EB = −0.5 Vdc, I C = 0, f = 1.0 MHz)C ib−110−pF1.Pulse Test: Pulse Width ≤ 300 m s, Duty Cycle2.0%.ORDERING INFORMATIONDevice Package Shipping BC640−016G TO−92(Pb−Free)5000 Units / BulkI C , C O L L E C T O R C U R R E N T (m A )h F E , D C C U R R E N T G A I Nf , C U R R E N T -G A I N — B A N D W I D T H P R O D U C T (M H z )T V , V O L T A G E (V O L T S )V , T E M P E R A T U R E C O E F F I C I E N T S (m V /C )°θ-1000-1-2-5-10-20-50-100-200-500V CE , COLLECTOR-EMITTER VOLTAGE (VOLTS)Figure 1. Active Region Safe Operating Area500200100I C , COLLECTOR CURRENT (mA)Figure 2. DC Current Gain5003001005020I C , COLLECTOR CURRENT (mA)Figure 3. Current Gain Bandwidth Product -1-0.8-0.6-0.4-0.20I C , COLLECTOR CURRENT (mA)Figure 4. “Saturation” and “On” Voltages-0.2-1.0-2.2-1.6I C , COLLECTOR CURRENT (mA)Figure 5. Temperature CoefficientsPACKAGE DIMENSIONSTO −92 (TO −226)CASE 29−11ISSUE ANNOTES:1.DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.2.CONTROLLING DIMENSION: INCH.3.CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED.4.LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM.SECTION X −XPLANEDIM MIN MAX MIN MAX MILLIMETERSINCHES A 0.1750.205 4.45 5.20B 0.1700.210 4.32 5.33C 0.1250.165 3.18 4.19D 0.0160.0210.4070.533G 0.0450.055 1.15 1.39H 0.0950.105 2.42 2.66J 0.0150.0200.390.50K 0.500---12.70---L 0.250--- 6.35---N 0.0800.105 2.04 2.66P ---0.100--- 2.54R 0.115--- 2.93---V0.135--- 3.43---NOTES:1.DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.2.CONTROLLING DIMENSION: MILLIMETERS.3.CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED.4.LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM.SECTION X −XDIM MIN MAX MILLIMETERS A 4.45 5.20B 4.32 5.33C 3.18 4.19D 0.400.54G 2.40 2.80J 0.390.50K 12.70---N 2.04 2.66P 1.50 4.00R 2.93---V3.43---STRAIGHT LEAD BULK PACKBENT LEADTAPE & REEL AMMO PACKSTYLE 14:PIN 1.EMITTER2.COLLECTOR3.BASEON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.PUBLICATION ORDERING INFORMATION分销商库存信息: ONSEMIBC640-016G。

UF640中文资料

UNISONIC TECHNOLOGIES CO., LTDUF640MOSFET18 A, 200 V, 0.18 OHM,N-CHANNEL POWER MOSFETDESCRIPTIONThese kinds of n-channel power mos field effect transistor have low conduction power loss, high input impedance, and high switching speed, Linear Transfer Characteristics, so can be use in a variety of power conversion applications.The UF640 suitable for resonant and PWM converter topologies.FEATURES* R DS(ON) =0.18Ω@V GS = 10V.* Ultra Low gate charge (typical 43nC)* Low reverse transfer capacitance (C RSS = typical 100 pF) * Fast switching capability * Avalanche energy specified* Improved dv/dt capability, high ruggednessSYMBOL1.GateTO-22011TO-220F*Pb-free plating product number: UF640LORDERING INFORMATIONOrder Number Pin AssignmentNormal Lead Free Plating Package 1 2 3 PackingUF640-TA3-T UF640L-TA3-T TO-220 G D S Tube UF640-TF3-T UF640L-TF3-T TO-220F G D S TubeABSOLUTE MAXIMUM RATING (T C = 25 , unless otherwise specified)PARAMETER SYMBOL RATINGS UNITDrain Source Voltage V DSS 200 V Drain Gate Voltage (R GS = 20k Ω) V DGR 200 V Gate Source Voltage V GSS ±20 VT C = 25 18 AContinuous Drain Current T C = 100 I D11 APulsed Drain Current (Note ) I DM 72 A Single Pulse Avalanche Energy Rating (Note ) E AS 580 mJ Maximum Power Dissipation 125 WDissipation Derating Factor P D1.0W/ Junction Temperature T J +150 Storage Temperature T STG -55 ~ +150 Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.Absolute maximum ratings are stress ratings only and functional device operation is not implied.THERMAL DATAPARAMETER SYMBOL MIN TYP MAX UNITThermal Resistance, Channel to Ambient θJA 62 °C/W Thermal Resistance, Channel to Case θJC 1 °C/WELECTRICAL CHARACTERISTICS (T C = 25, unless otherwise specified)PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT Drain Source Breakdown Voltage BV DSS I D = 250µA, V GS = 0V 200 V Gate Threshold Voltage V GS(THR)V GS = V DS , I D = 250µA 2 4 VV DS = Rated BV DSS , V GS = 0V 25 µADrain-Source Leakage Current I DSS V DS = 0.8 x Rated BV DSS , V GS = 0V,T J = 125250µAOn-State Drain Current I D(ON) V DS >I D(ON) x R DS(ON)MAX, V GS = 10V 18 A Gate-Source Leakage Current I GSS V GS = ±20V ±100nA Drain-Source On Resistance R DS(ON)I D = 10A, V GS = 10V 0.14 0.18Ω Forward Transconductance g FS V DS ≥ 10V, I D = 11A 6.7 10 S Input Capacitance C ISS 1275 pFOutput Capacitance C OSS 400 pFReverse Transfer Capacitance C RSSV DS = 25V, V GS = 0V, f = 1MHz 100 pF Total Gate Charge(Gate to Source + Gate to Drain) Q G(TOT) 43 64 nCGate-Source Charge Q GS 8 nC Gate-Drain “Miller” Charge Q GDV GS = 10V, I D ≈ 18A, V DS = 0.8 x Rated BV DSS Gate Charge isEssentially Independent of Operating Temperature I G(REF) =1.5mA22 nC Turn-On Delay Time t D(ON) 13 21 ns Rise Time t R 50 77 nsTurn-Off Delay Time t D(OFF) 46 68 nsFall Time t FV DD = 100V, I D ≈ 18A, R GS = 9.1Ω, R L = 5.4Ω, MOSFET Switching Times are Essentially Independent ofOperating Temperature35 54 nsELECTRICAL CHARACTERISTICS(Cont.)2. Repetitive Rating: Pulse width limited by maximum junction temperature. See Transient Thermal Impedancecurve.3. L = 3.37mH, V DD = 50V, R G = 25Ω, peak I AS = 18A, starting T J = 25 .TEST CIRCUITV DSV DDASFigure 1A. Unclamped Energy Test CircuitFigure 1B. Unclamped Energy WaveformspBVFigure 2A. Switching Time Test CircuitFigure 2B. Resistive Switching WaveformsR LVDDV DSSAMPLING RESISTORSAMPLING RESISTOR 0Figure 3A. Gate Charge Test Circuit V DDFigure 3B. Gate Charge WaveformsTYPICAL CHARACTERISTICSSaturation CharacteristicsDrain to Source Voltage , V DS (V)D r a i n C u r re n t , I D (A )Drain to Source On Resistance v s. GateVoltage And Drain CurrentDrain Current , I D (A)D r a i n t o S o u r c e o n R e s i s t a n c e R D S (O N ) (Ω)。

EM351中文资料(List Unclassifed)中文数据手册「EasyDatasheet - 矽搜」

收发器使用高效架构,超过由所施加动态范围要求 IEEE 802.15.4-2003标准由超过15分贝.集成接收通道滤波允许强大合作存在与在2.4GHz频谱其他通信标准,如IEEE 802.11-2007和蓝牙.集成稳压器,VCO,环路滤波器和功率放大器防护持外部元件数量低.可选高性能无线模式（升压模式）,可通过软件选择,以提高动态范围.
4-2
7.2配置
7-2
4.4集成MAC模块
4-2
7.3强制功能
7-3
4.5数据包跟踪接口（PTI）
4-2
7.4复位
7-4
4.6随机数发生器
4-2
7.5启动配置
7-4
5 ARM ® 皮质 TM-M3和内存
7.6 GPIO模式
7-5
模块
5-1
7.6.1模拟模式
7-5
7.6.2输入模式
7-6
5.1 ARM ® 皮质 TM-M3微处理器
AES128加密加速器
灵活ADC,UART / SPI / TWI串行
通信和通用定时器
24高度可配置GPIO与施密特
触发器输入
业界领先ARM
® 皮质 M3处理器
领先32位处理性能
高效Thumb-2指令集
运行在6,12,或24兆赫
灵活嵌套向量中断控制器
低功耗,先进管理
接收电流（W / CPU）：26毫安
该EM35x提供许多先进电源管理功能,使电池寿命长.一个高频内部RC振荡器允许处理器核心醒来时迅速开始执行代码. 各种深睡眠模式可低于1μA功耗,同时防护持RAM内容. 为支持用户自定义应用程序,片上外设包括UART,SPI,TWI,ADC,以及通用定时器,以及多达24个GPIO. 此外,集成电压调节器,电源接通复位电路,和睡眠定时器可用.

640T系统电子资料目录

H735S40018C 操作说明书 HGENMA0021 移机检测装置维修说明 C 书 H562LA0019C 机械图册 DD556300001 DL557LT1000 DD557300001 DD557308001 DL557LT5000 S430SAN040C S430MAN040C DL430LT1000 S556MAN011C H556SB0011C H556SB0030C S557MAN022C 电气图册-电气原理图电气图册-梯形图电气图册-电气原理图电气图册(电气原理图) 电气图册（T形图）操作手册保养手册电气图册-梯形图保养手册使用说明书机械图册保养手册
NO. 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31
零件编号 H563LA0014C H735PG0019C H736PB0018C H735PB0032C H735SA0029C H735SA0040C H562MA0013C H562SG0013C H562MB0012J DD562002014 DD562002013A DL562LA8500A H562SB0012J H735SA0030C HGMCTA0012 C H735S30040C
机型 VCN510C VCN510C VCN410AB VTC200BCN VTC160AN VTC16AN VTC160AN-2PC VCN510C VCN410AB VTC200BCN VTC160AN VTC16AN VTC160AN-2PC VCN510C VCN410AB VTC200BCN VTC160AN VTC16AN VTC160AN-2PC VCN510C VCN410AB VTC200BCN VTC160AN VTC16AN VTC160AN-2PC VCN510C VCN410AB VTC200BCN VTC16AN VTC160AN-2PC VCN510C VCN410AB VCN510C VCN410AB VCN510C VCN410AB VCN510C VCN410AB VCN510C VCN410AB VCN510C VCN410AB 410A/410B/510C VCN510C VCN410AB VTC200BCN VTC160AN VTC16AN VCN510C VCN410AB VTC160AN-2PCVTC160AN VTC16AN VTC200BCN VTC160AN-2PCVTC160AN VTC16AN VCN510C VCN410AB VTC200BCN VTC160AN-2PC VCN510C VCN410AB VTC200BCN VTC160AN VTC16AN VTC160AN-2PC VCN510C VCN410AB VTC200BCN VTC160AN VTC160AN-2PC VCN410AB VTC160AN VTC160AN-2PC VTC200BCN VTC160AN VTC160AN-2PC VTC200BCN VTC200CN VTC200CN VTC200CN VTC16AN VTC16AN VTC16AN VTC160AN VTC160AN-2PC VTC160AN-2PC VTC200CBN

Dell EMC PowerEdge M640（适用于 VRTX 机柜）安装和服务手册说明书

Dell EMC PowerEdge M640（适用于 VRTX 机柜）安装和服务手册注意、小心和警告:“注意”表示帮助您更好地使用该产品的重要信息。

:“小心”表示可能会损坏硬件或导致数据丢失，并告诉您如何避免此类问题。

:“警告”表示可能会导致财产损失、人身伤害甚至死亡。

Dell、EMC 和其他商标是 Dell Inc. 或其附属机构的商标。

其他商标可能是其各自所有者的商标。

章 1: Dell EMC PowerEdge M640 概览 (7)系统的正面视图 (7)运行状态指示灯 (8)硬盘驱动器指示灯代码 (8)iDRAC Direct LED 指示灯代码 (9)找到您的系统的服务标签 (9)系统信息标签 (10)章 2: 说明文件资源 (11)章 3: 技术规格 (13)系统尺寸 (13)系统重量 (13)处理器规格 (14)支持的操作系统 (14)系统电池规格 (14)内存规格 (14)夹层卡规格 (14)存储控制器规格 (14)驱动器规格 (14)硬盘驱动器 (15)端口和连接器规格 (15)USB 端口 (15)内部双 SD 模块 (15)Micro SD vFlash 连接器 (15)视频规格 (15)环境规格 (15)微粒和气体污染规格 (16)标准操作温度 (17)扩展操作温度 (17)扩展操作温度限制 (17)散热限制值表 (18)章 4: 初始系统设置和配置 (20)设置系统 (20)iDRAC 配置 (20)用于设置 iDRAC IP 地址的选项 (20)登录到 iDRAC。

(21)安装操作系统的选项 (21)下载固件和驱动程序的方法 (21)下载驱动程序和固件 (22)章 5: 预装操作系统管理应用程序 (23)目录3用于管理预操作系统应用程序的选项 (23)System Setup (系统设置) (23)查看系统设置程序 (23)系统设置程序详细信息 (23)System BIOS（系统 BIOS） (24)iDRAC 设置公用程序 (41)设备设置 (41)Dell Lifecycle Controller (42)嵌入式系统管理 (42)引导管理器 (42)查看引导管理器 (42)引导管理器主菜单 (42)一次性 UEFI 引导菜单 (43)System Utilities（系统公用程序） (43)PXE 引导 (43)章 6: 安装和卸下系统组件 (44)安全说明 (44)拆装计算机内部组件之前 (44)拆装计算机内部组件之后 (45)建议工具 (45)从机柜中卸下系统 (45)将系统安装到机柜中 (47)系统内部 (48)系统护盖 (49)卸下系统护盖 (49)安装系统护盖 (50)导流罩 (52)卸下导流罩 (52)安装导流罩 (52)驱动器 (53)卸下驱动器挡片 (53)安装驱动器挡片 (54)卸下驱动器托盘 (54)安装驱动器托盘 (55)从驱动器托盘中卸下驱动器 (56)将驱动器安装到驱动器托架中 (57)卸下驱动器固定框架 (58)安装驱动器固定框架 (59)驱动器底板 (60)卸下驱动器背板 (60)安装驱动器底板 (62)系统内存 (63)系统内存指南 (63)一般内存模块安装原则 (64)模式特定原则 (64)卸下内存模块 (66)安装内存模块 (67)处理器和散热器 (68)4目录从处理器和散热器模块卸下处理器 (69)将处理器安装到处理器和散热器模块中 (70)安装处理器和散热器模块 (72)M.2 SSD 模块 (73)卸下 M.2 SSD 模块 (73)安装 M.2 SSD 模块 (74)网络子卡 (75)卸下网络子卡 (75)安装网络子卡 (76)PCIe 夹层卡 (77)PCIe 夹层卡安装原则 (77)卸下PCIe 夹层卡 (77)安装PCIe 夹层卡 (78)存储控制器卡 (79)卸下存储控制器卡 (79)安装存储控制器卡 (80)系统电池 (81)更换 NVRAM 备用电池 - 选项 A (81)更换 NVRAM 备用电池 - 选项 B (83)可选的内部 USB 存储盘 (84)装回可选的内置 USB 存储盘 (84)可选的 MicroSD 或 vFlash 卡 (85)卸下内部 MicroSD 卡 (85)安装内部 MicroSD 卡 (85)IDSDM (86)卸下可选的内置双 SD 模块 (86)安装可选的内置双 SD 模块 (87)系统板 (88)卸下系统板 (88)安装系统板 (90)可信平台模块 (93)升级可信平台模块 (93)为 BitLocker 用户初始化 TPM (94)为 TXT 用户初始化 TPM 1.2 (94)为 TXT 用户初始化 TPM 2.0 (94)rSPI 卡 (94)卸下 rSPI 卡 (95)安装 rSPI 卡 (95)章 7: 系统诊断程序 (97)Dell 嵌入式系统诊断程序 (97)从引导管理器运行嵌入式系统诊断程序 (97)从 Dell Lifecycle Controller 运行嵌入式系统诊断程序 (97)系统诊断程序控制 (97)章 8: 跳线和连接器 (99)系统板跳线和连接器 (99)系统板跳线设置 (100)目录5章 9: 获得帮助 (102)联系 Dell EMC (102)说明文件反馈 (102)通过使用 QRL 访问系统信息 (102)PowerEdge M640 系统的快速资源定位器 (103)通过 SupportAssist 接收自动支持 (103)循环利用或寿命结束服务的信息 (103)6目录Dell EMC PowerEdge M640 概览Dell EMC PowerEdge M640 是 PowerEdge VRTX 机柜支持的半高服务器模块，支持高达：•两个英特尔至强可扩展处理器•两个 2.5 英寸硬盘驱动器/SSD •16 个 DIMM: SAS 、SATA 硬盘驱动器和 SSD 的所有实例在本说明文件中都称为驱动器，除非另有说明。

640编号贴片晶体管参数代码查询uvwxyz

表示符号实际元件生产厂结构封装类型参数及代换型号U BB545 Sie I SOD32320-2pF varicapU1 BCX19 Mot N SOT23BC337U1p BCX19 Phi N SOT23BC337U1t BCX19 Phi N SOT23BC337U1 BGX50A Sie BQ SOT143quad ring Si sw diodesU1A 3SK230A Nec UQ SOT143 dg RF mosfetU1B 3SK230B Nec UQ SOT143 dg RF mosfetU1C 3SK231C Nec UQ SOT143 dg RF mosfetU1D 3SK231D Nec UQ SOT143dg RF mosfetU1E 3SK252E Nec UQ SOT143 dg RF mosfetU1E 3SK254E Nec UQ SOT343 dg RF mosfetU1G 3SK253G Nec UQ SOT143 dg RF mosfetU1G 3SK255G Nec UQ SOT343 dg RF mosfetU2 BCX20 Phi N SOT23BC338U2t BCX20 Phi N SOT23BC338U3 BSS64 Phi N SOT23120V 0.25A 0.2WU4 BCX19R Phi R SOT23R BC337U5 BCX20R Phi R SOT23R BC338U6 BSS64R Phi R SOT23R120V 0.25A 0.2WU7 BSR13 SGS N SOT232N2222U7p BSR13 Phi N SOT232N2222U7t BSR13 Phi N SOT232N2222U8 BSR14 SGS N SOT232N2222AU8p BSR14 Phi N SOT232N2222AU8t BSR14 Phi N SOT232N2222AU16 2SC4183 Nec N npn RF 5V fT1GHz hFE 60-120U17 2SC4183 Nec N npn RF 5V fT1GHz hFE 90-180U18 2SC4183 Nec N npn RF 5V fT1GHz hFE 120-240 U21 2SC4185 Nec N npn RF 10V fT2.4GHz hFE 40-80 U22 2SC4185 Nec N npn RF 10V fT2.4GHz hFE 60-120 U23 2SC4185 Nec N npn RF 10V fT2.4GHz hFE 90-180 U55 3SK134B Nec UQ SOT143 dg mosfetU55 3SK245 Nec UQ SOT343 dg mosfetU56 3SK134B Nec UQ SOT143 dg mosfetU56 3SK245 Nec UQ SOT343 dg mosfetU65 3SK135A Nec UQ SOT143 dg mosfetU66 3SK135A Nec UQ SOT143 dg mosfetU71 BSR13R SGS R SOT23R 2N2222U71 3SK177 Nec UQ SOT143dg GaAsfet Idss 5-15mAU71 3SK299 Nec UQ SOT343dg GaAsfet Idss 5-15mAU72 3SK177 Nec UQ SOT143dg GaAsfet Idss10-25mAU72 3SK299 Nec UQ SOT343dg GaAsfet Idss 10-25mAU73 3SK177 Nec UQ SOT143dg GaAsfet Idss 20-35mAU73 3SK299 Nec UQ SOT343dg GaAsfet Idss 20-35mAU74 3SK177 Nec UQ SOT143dg GaAsfet Idss 30-40mAU74 3SK299 Nec UQ SOT343dg GaAsfet Idss 30-40mAU76 3SK206 Nec UQ SOT143dg GaAsfet Idss 10-25mAU77 3SK206 Nec UQ SOT143dg GaAsfet Idss 20-35mAU78 3SK206 Nec UQ SOT143dg GaAsfet Idss 30-50mAU79 3SK206 Nec UQ SOT143dg GaAsfet Idss 45-80mAU81 BSR14R SGS R SOT23R 2N2222AU87 3SK176A Nec UQ SOT143 dg mosfetU88 3SK176A Nec UQ SOT143 dg mosfetU90 3SK223 Nec UQ SOT143dg mosfetU90 3SK243 Nec UQ SOT343 dg mosfetU91 3SK223 Nec UQ SOT143 dg mosfetU91 3SK243 Nec UQ SOT143dg mosfetU92 BSR17A Fch N SOT232N3904U92p BSR17A Phi N SOT232N3904U94 3SK224D Nec UQ SOT143 dg mosfetU94 3SK244D Nec UQ SOT343 dg mosfetU95 3SK224E Nec UQ SOT143 dg mosfetU95 3SK244E Nec UQ SOT143 dg mosfetUB 2SB852K Roh N pnp darlington comp 2SD1383K UC MSC2404-C Mot H npn RF 450MHz fT 20V本站所有文章不得转载！可以链接网址使贴片元件标示代号查询表示符号实际元件生产厂结构封装类型参数及代换型号V01 VN50300T Sil M n-ch enh mosfet 500V 22mAV02 VN0605T Sil M n-ch enh mosfet 60V/0.18AV04 VN45350T Sil M n-ch enh mosfet 450V 20mAV1p BFT25 Phi N SOT23npn RF 5V 6.5mA 2.3GHzV1 MRF959 Mot N SC75npn RF fT 9GHzV2 BFQ67 Tfk N npn RF fT 7.5 GHz 50mAV3 BFG67 Phi X SOT143npn RF fT 8GHz 50mAV5 BFG197 Phi X SOT143npn RF 7.5GHz 100mAV11 3SK131 Nec UQ SOT143dg VHF mosfetV11 3SK242 Nec UQ SOT343dg VHF mosfetV12 3SK131 Nec UQ SOT143dg VHF mosfetV12 3SK242 Nec UQ SOT343dg VHF mosfetV13 3SK131 Nec UQ SOT143dg VHF mosfetV13ZC932Zet C SOT23 5 - 17pF hyperabrupt varicap V13 3SK242 Nec UQ SOT343dg VHF mosfetV14ZC931Zet C SOT23 4 -13.5pF hyperabrupt varicap V15ZC930Zet C SOT23 3 - 9pF hyperabrupt varicapV16ZC934Zet C SOT2325 - 95pF hyperabrupt varicap V17ZC933Zet C SOT2312 - 42pF hyperabrupt varicap V21 3SK222 Nec UQ SOT143dg VHF mosfetV21 3SK246 Nec UQ SOT343dg VHF mosfetV22 3SK222 Nec UQ SOT143dg VHF mosfetV22 3SK246 Nec UQ SOT343dg VHF mosfetV50 VP0610T Sil M p-ch enh mosfet -60V 120mA VB MSC2295-B Mot H npn RF 150MHz fT 20VVC MSC2295-C Mot H npn RF 150MHz fT 20V表示符号实际元件生产厂结构封装类型参数及代换型号W0F TSDF1205RW Tfk WQ SOT343 12GHz npn 5mA 4VW1s BFT92Sie N SOT23BFQ51/BFQ76W1s BCR10PN Sie DP SOT363pnp/npn dig 0.1A 10k+10kW2TSDF1220RW Tfk WQ SOT343 12GHz npn 6V 20mAW3BZX84-C2V4Phi C SOT230.3W zener 2.4V±5%W4BZX84-C2V7Phi C SOT230.3W zener 2.7V±5%W5BZX84-C3V0Phi C SOT230.3W zener 3.0V±5%W6BZX84-C3V3Phi C SOT230.3W zener 3.3V±5%W7BZX84-C3V6Phi C SOT230.3W zener 3.6V±5%W8BZX84-C3V9Phi C SOT230.3W zener 3.9V±5%W8BZV49C3V9Zet O SOT891W zener 3.9V±5%W9BZX84-C4V3Phi C SOT230.3W zener 4.3V±5%W9BZV49C4V3Zet O SOT891W zener 4.3V±5%W18BFP181TW Tfk X npn RF fT 7.8GHz 10V 20mA W18BFP181TRW Tfk WQ npn RF fT 7.8GHz 10V 20mA W22S822TW Tfk X npn rf fT 5.2 GHz 6V 8mAW22S822TRW Tfk WQ npn rf fT 5.2 GHz 6V 8mAW28BFP280TRW Tfk WQ npn rf fT 7 GHz 8V 10mAW28BFP280TW Tfk X npn rf fT 7 GHz 8V 10mAW52S852TW Tfk X npn rf fT 5.2 GHz 6V 8mAW67BFP67W Tfk X npn rf fT 7.5 GHz 10V 50mA W82BFP182TRW Tfk WQ npn rf fT 7.5 GHz 10V 35mA W82BFP182TW Tfk X npn rf fT 7.5 GHz 10V 35mA W83BFP183TRW Tfk WQ npn rf fT 7.4 GHz 10V 65mA W83BFP183T Tfk X npn rf fT 7.4 GHz 10V 65mA W92BFP92AW Tfk X SOT343 npn rf fT 6 GHz 15V 30mA WB2SD1383K Roh N npn darlington comp 2SB852K WCs BCR133Sie N SOT23npn dig 50V 0.1A 10k+10k WCs BCR133T Sie N SC75npn dig 50V 0.1A 10k+10k WCs BCR133U Sie N SOT457npn dig 50V 0.1A 10k+10k WCs BCR133W Sie N SOT323npn dig 50V 0.1A 10k+10k WCs BCR133S Sie DN SOT363dual BCR133WDs BCR141Sie N SOT23npn 50V 0.1A dig 22k +22k WDs BCR141T Sie N SC75npn 50V 0.1A dig 22k +22k WDs BCR141W Sie N SOT323npn 50V 0.1A dig 22k +22k WDs BCR141S Sie DN SOT363dual BCR141WEs BCR148Sie N SOT23npn 50V 0.1A dig 47k +47k WEs BCR148T Sie N SC75npn 50V 0.1A dig 47k +47k WEs BCR148U Sie N SOT457npn 50V 0.1A dig 47k +47k WEs BCR148W Sie N SOT323npn 50V 0.1A dig 47k +47k WEs BCR148S Sie DN SOT363dual BCR148WE1BFS17W Tfk N npn rf fT 2.1GHz SOT-323 WE2BFS17AW Tfk N npn rf fT 3.2GHz SOT-323 WFs BCR08PN Sie DP SOT363pnp/npn dig 0.1A 2k2+47k WFs BCR112Sie N SOT23npn dig 50V 0.1A 4k7+4k7WF0TSDF1205W Tfk X SOT34312 GHz npn 5mA 4VWF2TSDF1220W Tfk X SOT343 12GHz npn 6V 20mAWFE BFP93A Tfk X SOT343 BFP93A (FE) in 6GHz npn WGs BCR116Sie N SOT23npn dig 50V 0.1A 4k7+47k WGs BCR116W Sie N SOT323npn dig 50V 0.1A 4k7+47k WHs BCR108Sie N SOT23npn dig 50V 0.1A 2k2+47k WHs BCR108T Sie N SC75npn dig 50V 0.1A 2k2+47k WHs BCR108W Sie N SOT323npn dig 50V 0.1A 2k2+47k WHs BCR108S Sie DN SOT363dual BCR108WIs BCR158Sie N SOT23pnp dig 50V 0.1A 2k2+47k WIs BCR158T Sie N SC75pnp dig 50V 0.1A 2k2+47k WIs BCR158W Sie N SOT323pnp dig 50V 0.1A 2k2+47k WJs BCR135Sie N SOT23npn dig 50V 0.1A 10k+47k WJs BCR135T Sie N SC75npn dig 50V 0.1A 10k+47k WJs BCR135W Sie N SOT323npn dig 50V 0.1A 10k+47k WJs BCR135S Sie DN SOT363dual BCR135WKs BCR119Sie N SOT23npn dig 50V 0.1A 4k7 WKs BCR119S Sie DN SOT363npn dig 50V 0.1A 4k7 WKs BCR119W Sie N SOT323npn dig 50V 0.1A 4k7WLs BCR146Sie N SOT23dual npn dig 50V 47k+22k WLs BCR146W Sie N SOT323dual npn dig 50V 47k+22k WMs BCR183Sie N SOT23pnp dig 50V 10k+10k WMs BCR183W Sie N SOT323pnp dig 50V 10k+10k WMs BCR183T Sie N SC75pnp dig 50V 10k+10k WMs BCR183U Sie N SOT457pnp dig 50V 10k+10k WMs BCR183S Sie DO SOT363dual pnp dig 50V 10k+10k WMO BF998RW Tfk UQ SOT343R vhf dg mosfet BF988WNs BCR185Sie N SOT23pnp dig 50V 0.1A 10k+47k WNs BCR185U Sie N SOT457pnp dig 50V 0.1A 10k+47k WNs BCR185W Sie N SOT323pnp dig 50V 0.1A 10k+47k WNs BCR185S Sie DO SOT363dual BCR185WOs BCR191Sie N SOT23pnp dig 50V 0.1A 22k+22k WOs BCR191W Sie N SOT323pnp dig 50V 0.1A 22k+22k WOs BCR191S Sie DO SOT363dual BCR191WO BZX284-B2V4Phi I SOD1100.4W zener 2.4V E24 ±2% WP BZX284-B2V7Phi I SOD1100.4W zener 2.7V E24 ±2% WPs BCR192Sie N SOT23pnp dig 50V 0.1A 22k+47k WPs BCR192T Sie N SC75pnp dig 50V 0.1A 22k+47k WPs BCR192W Sie N SOT323pnp dig 50V 0.1A 22k+47kWPs BCR22PN Sie DP SOT363pnp/npn dig 0.1A 22k+22kWP2BFR92A Tfk N SOT23BRF90AWQ BZX284-B3V0Phi I SOD1100.4W zener 3.0V E24 ±2%WR MSD602R Mot N SOT346npn gp 25V 150mAWRs BCR198Sie N SOT23pnp dig 50V 0.1A 47k+47kWRs BCR198W Sie NN SOT323pnp dig 50V 0.1A 47k+47kWRs BCR198S Sie D SOT363dual BCR198WR BZX284-B3V3Phi I SOD1100.4W zener 3.3V E24 ±2%WR2BFR93AW Tfk N BFR91AWRE BFR280TW Tfk N npn RF fT 7.5GHzWRF BFR181TW Tfk N npn RF fT 7.8GHzWRG BFR182TW Tfk N npn RF fT 7GHzWRH BFR183TW Tfk N npn RF fT 7.4GHzWS BCR169Sie N SOT23pnp dig 50V 0.1A 4k7WS BCR169W Sie N SOT323pnp dig 50V 0.1A 4k7WS BCR169S Sie DO SOT363dual BC169WS BZX284-B3V6Phi I SOD1100.4W zener 3.6V E24 ±2%WT BCR166Sie N SOT23pnp dig 50V 0.1A 4k7+47kWT BCR166W Sie N SOT323pnp dig 50V 0.1A 4k7+47kWT BCR48PN Sie DP SOT363pnp/npn dig npn 2x47k pnp 2k2+47k WT BZX284-B3V9Phi I SOD1100.4W zener 3.9V E24 ±2%WU BCR162Sie N SOT23pnp dig 50V 0.1A 4k7+4k7WU BCR162T Sie N SC75pnp dig 50V 0.1A 4k7+4k7WU BCR35PN Sie DP SOT363pnp/npn dig 0.1A 10k+47kWU BZX284-B4V3Phi I SOD1100.4W zener 4.3V E24 ±2%WU MRF2947A Mot DG SOT363dual MRF941 npn RF 9GHz复制带链接的文本推荐其它网站→W-贴片三极管型号查寻本站所有文章不得转载！可以链接网址使贴片元件标示代号查询表示符号实际元件生产厂结构封装类型参数及代换型号X (white)BB833Sie I SOT3239.3-0.75pF varicapX(yellow)BB835Sie I SOT3239.1-0.6pF varicapX1BFT93Sie N SOT23BFQ23 BFQ75X1p BFT93Phi N SOT23BFQ23 BFQ75X1IMX1Roh DC dual 2SC2412K npnX1BZX84-C27Phi C SOT230.3W zener 27V±5%X2IMX2Roh DD dual 2SC2412K npnX2BZX99-C13Phi C SOT2313V 0.3W zener ±5%X2BZX84-C30Zet C SOT230.3W zener 30V±5%X2BZV49C30Zet O SOT891W zener 30V±5%X3BZX99-C15Phi C SOT2315V 0.3W zener ±5%X3BZX84-C33Zet C SOT230.3W zener 33V±5%X4BFT93R Sie R SOT23R BFQ23 BFQ75X4BZX84-C36Zet C SOT230.3W zener 36V±5%X5BZV49C39Zet O SOT891W zener 39V±5%X5MMBV409G Mot C SOT23Hyperabrupt varicapX6BZV49C43Zet O SOT891W zener 43V±5%X6BZX84-C43Zet C SOT230.3W zener 43V±5%X7BZX84-C47Zet C SOT230.3W zener 47V±5%XAs BCR503Sie N SOT23npn dtr 50V 0.5A 2k2 +2k2 XA BZX284-B7V5Phi I SOD1100.4W zener 7.5V E24 ±2% XA BZX99-C4V7Phi C SOT23 4.7V 0.3W zenerXBs BCR553Sie N SOT23pnp dtr 50V 0.5A 2k2 +2k2 XB BZX284-B8V2Phi I SOD1100.4W zener 8.2V E24 ±2% XB BZX99-C5V1Phi C SOT23 5.1V 0.3W zenerXCs BCR533Sie N SOT23npn dtr 50V 0.5A 10k + 10k XC BZX284-B9V1Phi I SOD1100.4W zener 9.1V E24 ±2% XC BZX99-C5V6Phi C SOT23 5.6V 0.3W zenerXDs BCR555Sie N SOT23pnp dtr 50V 0.5A 2k2 +10k XD BZX284-B10Phi I SOD1100.4W zener 10V E24 ±2% XD BZX99-C6V2Phi C SOT23 6.2V 0.3W zenerXE BZX284-B11Phi I SOD1100.4W zener 11V E24 ±2% XE BZX99-C6V8Phi C SOT23 6.8V 0.3W zenerXFs BCR512Sie N SOT23npn dtr 50V 0.5A 4k7+ 4k7 XF BZX284-B12Phi I SOD1100.4W zener 12V E24 ±2% XGs BCR523Sie N SOT23npn dtr 50V 0.5A 1k0 +10k XG BZX284-B13Phi I SOD1100.4W zener 13V E24 ±2% S XHs BCR573Sie N SOT23pnp dtr 50V 0.5A 1k0 +10k XH BZX284-B15Phi I SOD1100.4W zener 15V E24 ±2% XH MMSD701Mot I SOD123MMBD701XI BZX284-B16Phi I SOD1100.4W zener 16V E24 ±2% XJ BZX284-B18Phi I SOD1100.4W zener 18V E24 ±2% XKs BCR519Sie N SOT23npn dtr 50V 0.5A R1 4k7 XK BZX284-B20Phi I SOD1100.4W zener 20V E24 ±2% XLs BCR569Sie N SOT23pnp dtr 50V 0.5A R1 4k7 XL BZX284-B22Phi I SOD1100.4W zener 22V E24 ±2%XL BZX99-C2V4Phi C SOT23 2.4V 0.3W zenerXMs BCR583Sie N SOT23pnp dtr 50V 0.5A 10k +10k XM BZX284-B24Phi I SOD1100.4W zener 24V E24 ±2% XM BZX99-C2V7Phi C SOT23 2.7V 0.3W zenerXN BZX284-B27Phi I SOD1100.4W zener 27V E24 ±2% XN BZX99-C3V0Phi C SOT23 3.0V 0.3W zenerXO BZX284-B30Phi I SOD1100.4W zener 30V E24 ±2% XP MMBD3000Mot C SOT346Si diode 30V 0.2AXP BZX284-B33Phi I SOD1100.4W zener 33V E24 ±2% XP BZX99-C3V3Phi C SOT23 3.3V 0.3W zenerXQ MMBD3005Mot A SOT346dual ca MMBD3000XQ BZX284-B36Phi I SOD1100.4W zener 36V E24 ±2% XQ2PD602AQ Phi N SOT346gp npn hfe 85-170XR BZX284-B39Phi I SOD1100.4W zener 39V E24 ±2% XR BZX99-C3V6Phi C SOT23 3.6V 0.3W zenerXR MRF2947RA Mot DH SOT363dual MRF941 npn RF 9GHz XR2PD602AR Phi N SOT346gp npn hfe 120-240XS MMBD3010Mot B SOT346dual cc MMBD3000XS BZX284-B43Phi I SOD1100.4W zener 43V E24 ±2% XS BZX99-C3V9Phi C SOT23 3.9V 0.3W zenerXS2PD602AS Phi N SOT346gp npn hfe 170-340XT BZX284-B47Phi I SOD1100.4W zener 47V E24 ±2% XT MMSD301Mot I SOD123MBD301XT BZX99-C4V3Phi C SOT23 4.3V 0.3W zenerXU BZX284-B51Phi I SOD1100.4W zener 51V E24 ±2% XU MRF2947RA Mot DH dual MRF941 npn RF 9GHz XUs BCR562Sie N SOT23pnp dtr 50V 0.5A 4k7+ 4k7 XU BZX99-C7V5Phi C SOT237.5V 0.3W zenerXV BZX284-B56Phi I SOD1100.4W zener 56V E24 ±2% XVs BCR521Sie N SOT23npn dtr 50V 0.5A 1k0 +1k0 XV BZX99-C8V2Phi C SOT238.2V 0.3W zenerXW BZX284-B62Phi I SOD1100.4W zener 62V E24 ±2% XWs BCR505Sie N SOT23npn dtr 50V 0.5A 2k2 +10k XW BZX99-C9V1Phi C SOT239.1V 0.3W zenerXX BZX284-B68Phi I SOD1100.4W zener 68V E24 ±2% XX BZX99-C10Phi C SOT2310V 0.3W zenerXXs BCR571Sie N SOT23pnp dtr 50V 0.5A 1k0 +1k0 XY BZX99-C11Phi C SOT2311V 0.3W zenerXY BZX284-B75Phi I SOD1100.4W zener 75V E24 ±2%XZ BZX99-C12Phi C SOT2312V 0.3W zener贴片元件标示代码查询表示符号实际元件生产厂结构封装类型参数及代换型号Y0s CGY121B Sie　GaAs MMICY1BZX84-C11Phi C SOT230.3W zener 11V±5%Y1p BZX84-C11Phi C SOT230.3W zener 11V±5%Y1BZV49C11Zet O SOT891W zener 11V ±5%Y2CLY2Sie DR MW63GHz GaAsfet 0.25W 3GHz Y2BZX84-C12Phi C SOT230.3W zener 12V±5%Y3BZX84-C13Phi C SOT230.3W zener 13V±5%Y4BZX84-C15Phi C SOT230.3W zener 15V±5%Y4BZV49C15Zet O SOT891W zener 15V ±5%Y5s CGY59Sie DS SOT363GaAs 0.9/1.8GHz preamp Y5BZX84-C16Phi C SOT230.3W zener 16V±5%Y5BZV49C16Zet O SOT891W zener 16V ±5%Y6s CGY62Sie DS MW6GaAs MMICY6BZX84-C18Phi C SOT230.3W zener 18V±5%Y7CGY60Sie DS MW6GaAs preamp MMIC 1.8GHz Y7BZX84-C20Phi C SOT230.3W zener 20V±5%Y8CGY120Sie MW6GaAs MMICY8BZX84-C22Phi C SOT230.3W zener 22V±5%Y8BZV49C22Zet O SOT891W zener 22V ±5%Y9s CGY121A Sie MW6GaAs MMICY9BZX84-C24Phi C SOT230.3W zener 24V±5%Y9BZV49C24Zet O SOT891W zener 124V ±5%Y10BZX84-C27Phi C SOT230.3W zener 27V±5%Y11BZX84-C30Phi C SOT230.3W zener 30V±5%Y12BZX84-C33Phi C SOT230.3W zener 33V±5%Y13BZX84-C36Phi C SOT230.3W zener 36V±5%Y14BZX84-C39Phi C SOT230.3W zener 39V±5%Y15BZX84-C43Phi C SOT230.3W zener 43V±5%Y16BZX84-C47Phi C SOT230.3W zener 47V±5%Y17BZX84-C51Phi C SOT230.3W zener 51V±5%Y18BZX84-C56Phi C SOT230.3W zener 56V±5%Y19BZX84-C62Phi C SOT230.3W zener 62V±5% Y20BZX84-C68Phi C SOT230.3W zener 68V±5% Y21BZX84-C75Phi C SOT230.3W zener 75V±5% Y36BZX84-C13V6Phi C SOT230.3W zener 13.6V±5% Y50BZX84-A2V4Phi C SOT230.3W zener 2.4V ±1% Y51BZX84-A2V7Phi C SOT230.3W zener 2.7V ±1% Y52BZX84-A3V0Phi C SOT230.3W zener 3.0V ±1% Y53BZX84-A3V3Phi C SOT230.3W zener 3.3V ±1% Y54BZX84-A3V6Phi C SOT230.3W zener 3.6V ±1% Y55BZX84-A3V9Phi C SOT230.3W zener 3.9V ±1% Y56BZX84-A4V3Phi C SOT230.3W zener 4.3V ±1% Y57BZX84-A4V7Phi C SOT230.3W zener 4.7V ±1% Y58BZX84-A5V1Phi C SOT230.3W zener 5.1V ±1% Y59BZX84-A5V6Phi C SOT230.3W zener 5.6V ±1% Y60BZX84-A6V2Phi C SOT230.3W zener 6.2V ±1% Y61BZX84-A6V8Phi C SOT230.3W zener 6.8V ±1% Y62BZX84-A7V5Phi C SOT230.3W zener 7.5V ±1% Y63BZX84-A8V2Phi C SOT230.3W zener 8.2V ±1% Y64BZX84-A9V1Phi C SOT230.3W zener 9.1V ±1% Y65BZX84-A10Phi C SOT230.3W zener 10V ±1% Y66BZX84-A11Phi C SOT230.3W zener 11V ±1% Y67BZX84-A12Phi C SOT230.3W zener 12V ±1% Y68BZX84-A13Phi C SOT230.3W zener 13V ±1% Y69BZX84-A15Phi C SOT230.3W zener 15V ±1% Y70BZX84-A16Phi C SOT230.3W zener 16V ±1% Y71BZX84-A18Phi C SOT230.3W zener 18V ±1% Y72BZX84-A20Phi C SOT230.3W zener 20V ±1% Y73BZX84-A22Phi C SOT230.3W zener 22V ±1% Y74BZX84-A24Phi C SOT230.3W zener 24V ±1% Y75BZX84-A27Phi C SOT230.3W zener 27V ±1% Y76BZX84-A30Phi C SOT230.3W zener 30V ±1% Y77BZX84-A33Phi C SOT230.3W zener 33V ±1% Y78BZX84-A36Phi C SOT230.3W zener 36V ±1% Y79BZX84-A39Phi C SOT230.3W zener 39V ±1% Y80BZX84-A43Phi C SOT230.3W zener 43V ±1% Y81BZX84-A47Phi C SOT230.3W zener 47V ±1% Y82BZX84-A51Phi C SOT230.3W zener 51V ±1% Y83BZX84-A56Phi C SOT230.3W zener 56V ±1% Y84BZX84-A62Phi C SOT230.3W zener 62V ±1%Y85BZX84-A68Phi C SOT230.3W zener 68V ±1%Y86BZX84-A75Phi C SOT230.3W zener 75V ±1%YBs BSS84Inf M SOT23p-ch mosfet 50V 0.13AYO BZX284-C2V4Phi I SOD1100.4W zener 2.4V E12 ±5%YP BZX284-C2V7Phi I SOD1100.4W zener 2.7V E12 ±5%YQ BZX284-C3V0Phi I SOD1100.4W zener 3.0V E12 ±5%YR MSD601R Mot N SOT346npn gp 25VYR BZX284-C3V3Phi I SOD1100.4W zener 3.3V E12 ±5%YS MSD601S Mot N SOT346npn gp 25VYS BZX284-C3V6Phi I SOD1100.4W zener 3.6V E12 ±5%YT BZX284-C3V9Phi I SOD1100.4W zener 3.9V E12 ±5%YU BZX284-C4V3Phi I SOD1100.4W zener 4.3V E12 ±5%YV BZX284-C4V7Phi I SOD1100.4W zener 4.7V E12 ±5%YW BZX284-C5V1Phi I SOD1100.4W zener 5.1V E12 ±5%YX BZX284-C5V6Phi I SOD1100.4W zener 5.6V E12 ±5%YY BZX284-C6V2Phi I SOD1100.4W zener 6.2V E12 ±5%补充：元器件标示代号封装形式实际元件型号制造工厂替换型号Y 2 SOD-523BB182B PH2 SOD-523HSMP-282Y AVY*4 QFN-4HMPP-3893 AVY0S 6 MW-6CGY121B IF3 SOT-23BZX84C11 NS SM ZE BZX79C11 Y13 SOT-89BZV49C11 ZE BZV85C11 Y1** 3 SOT-23TC1273-5ENB MIY10 3 SOT-23BZX84C27 NS TH VAL BZX79C27 Y11 3 SOT-23BZX84C30 NS TH VAL BZX79C303 SC-592SA1464Y12 NEY123 SC-702SA1608Y12 NE3 SOT-23BZX84C33 NS TH VAL BZX79C333 SC-592SA1464Y13 NEY133 SC-702SA1608Y13 NE3 SOT-23BZX84C36 TH VAL BZX79C363 SC-592SA1464Y14 NEY143 SC-702SA1608Y14 NE3 SOT-23BZX84C39 TH VAL BZX79C393 SC-59NTM2907AY15 2N2907A Y153 SOT-23BZX84C43 TH BZX79C43 Y16 3 SOT-23BZX84C47 TH VAL BZX79C47 Y17 3 SOT-23BZX84C51 TH VAL BZX79C51 Y18 3 SOT-23BZX84C56 TH VAL BZX79C56 Y19 3 SOT-23BZX84C62 TH VAL BZX79C62 Y1p 3 SOT-23BZX84C11 PH BZX79C11 Y1t 3 SOT-23BZX84-C11 PHY1W 3 SOT-23BZX84-C11 PH3 SOT-23BZX84C12 NS SM ZE BZX79C12 Y26 MW-6CLY2 IFY2** 3 SOT-23TC1273-10ENB MIY20 3 SOT-23BZX84C68 TH VAL BZX79C68 Y21 3 SOT-23BZX84C75 TH VAL BZX79C75 Y22 3 SC-592SA1461Y22 NEY23 3 SC-592SA1461Y23 NEY24 3 SC-592SA1461Y24 NEY25 3 SC-59NTM3906Y25 2N3906Y2p 3 SOT-23BZX84C12 PH BZX79C12 Y2t 3 SOT-23BZX84-C12 PHY2W 3 SOT-23BZX84-C12 PHY3 3 SOT-23BZX84C13 NS SM ZE BZX79C13 Y3** 3 SOT-23TC1273-15ENB MI3 SC-592SA1462Y33 NEY333 SC-702SA1610Y33 NE3 SC-592SA1462Y34 NEY343 SC-702SA1610Y34 NEY36 3 SOT-23BZX84C13V6 ZEY3p 3 SOT-23BZX84C13 PH BZX79C13 Y3t 3 SOT-23BZX84-C13 PH3 SC-75KA4A4Z NE3 SOT-23BZX84C15 NS SM ZE BZX79C15 Y43 SOT-89BZV49C15 ZE BZV85C15 Y4p 3 SOT-23BZX84C15 PH BZX79C15 Y4t 3 SOT-23BZX84-C15 PHY4W 3 SOT-23BZX84-C15 PH3 SOT-23BZX84C16 NS SM ZE BZX79C16 Y53 SOT-89BZV49C16 ZE BZV85C16 Y50 3 SOT-23BZX84-A2V4 PHY51 3 SOT-23BZX84-A2V7 PHY52 3 SOT-23BZX84-A3V0 PHY53 3 SOT-23BZX84-A3V3 PHY54 3 SOT-23BZX84-A3V6 PHY55 3 SOT-23BZX84-A3V9 PHY56 3 SOT-23BZX84-A4V3 PHY57 3 SOT-23BZX84-A4V7 PHY58 3 SOT-23BZX84-A5V1 PHY59 3 SOT-23BZX84-A5V6 PHY5p 3 SOT-23BZX84C16 PH BZX79C16 Y5s 6 SOT-363CGY59W IFY5t 3 SOT-23BZX84-C16 PHY5W 3 SOT-23BZX84-C16 PH3 SOT-23BZX84C18 NS SM ZE BZX79C18 Y66 MW-6CGY120 SMY60 3 SOT-23BZX84-A6V2 PHY61 3 SOT-23BZX84-A6V8 PHY62 3 SOT-23BZX84-A7V5 PHY63 3 SOT-23BZX84-A8V2 PHY64 3 SOT-23BZX84-A9V1 PHY65 3 SOT-23BZX84-A10 PHY66 3 SOT-23BZX84-A11 PHY67 3 SOT-23BZX84-A12 PHY68 3 SOT-23BZX84-A13 PHY69 3 SOT-23BZX84-A15 PHY6p 3 SOT-23BZX84C18 PH BZX79C18 Y6s 6 MW-6CGY62 IFY6t 3 SOT-23BZX84-C18 PHY6W 3 SOT-23BZX84-C18 PH3 SC-75KN4A4Z NEY73 SOT-23BZX84C20 NS SM ZE BZX79C20 Y70 3 SOT-23BZX84-A16 PHY71 3 SOT-23BZX84-A18 PHY72 3 SOT-23BZX84-A20 PHY73 3 SOT-23BZX84-A22 PHY74 3 SOT-23BZX84-A24 PHY75 3 SOT-23BZX84-A27 PHY76 3 SOT-23BZX84-A30 PHY77 3 SOT-23BZX84-A33 PHY78 3 SOT-23BZX84-A36 PHY79 3 SOT-23BZX84-A39 PHY7p 3 SOT-23BZX84C20 PH BZX79C20 Y7s 6 MW-6CGY60 IFY7t 3 SOT-23BZX84-C20 PHY7W 3 SOT-23BZX84-C20 PH3 SOT-23BZX84C22 NS SM ZE BZX79C22 Y83 SOT-89BZV49C22 ZE BZV85C22 Y80 3 SOT-23BZX84-A43 PHY81 3 SOT-23BZX84-A47 PHY82 3 SOT-23BZX84-A51 PHY83 3 SOT-23BZX84-A56 PHY84 3 SOT-23BZX84-A62 PHY85 3 SOT-23BZX84-A68 PHY86 3 SOT-23BZX84-A75 PHY8p 3 SOT-23BZX84C22 PH BZX79C22 Y8t 3 SOT-23BZX84-C22 PHY8W 3 SOT-23BZX84-C22 PH3 SOT-23BZX84C24 NS SM ZE BZX79C24 Y93 SOT-89BZV49C24 ZE BZV85C24 Y9p 3 SOT-23BZX84C24 PH BZX79C24 Y9S 6 MW-6CGY121A IFY9t 3 SOT-23BZX84-C24 PHY9W 3 SOT-23BZX84-C24 PH3 SOT-23BCW61RA TFK BC558A YA6 SC-88µPA679TB NEYAs 3 SOT-23BSS83P IF3 SOT-23BCW61RB TFK BC558B YB3 SOT-892SK680A NEYBs 3 SOT-23BSS84P IFYC 3 SOT-23BCW61RC TFK BC558B YD 3 SOT-23BCW61RD TFK BC558C YG 3 SOT-23BCX71RG TFK BC557A YH 3 SOT-23BCX71RH TFK BC557B YJ 3 SOT-23BCX71RJ TFK BC557B3 SOT-23BCX71RK TFK BC557C YK3 SOT-892SB1115YK NEYL 3 SOT-892SB1115YL NEYM 3 SOT-892SB1115YM NEYO 2 SOD-110BZX284-C2V4 PH2 SOD-110BZX284-C2V7 PHYP3 SOT-892SB1115AYP NE2 SOD-110BZX284-C3V0 PHYQ3 SC-752PA1774Q PH3 SOT-892SB1115AYQ NE2 SOD-110BZX284-C3V3 PHYR3 SC-752PA1774R PH2 SOD-110BZX284-C3V6 PHYS3 SC-752PA1774S PHYT 2 SOD-110BZX284-C3V9 PHYU 2 SOD-110BZX284-C4V3 PHYV 2 SOD-110BZX284-C4V7 PHYW 2 SOD-110BZX284-C5V1 PHYX 2 SOD-110BZX284-C5V6 PHYY 2 SOD-110BZX284-C6V2 PHYZ 2 SOD-110BZX284-C6V8 PH贴片元件标示代码表示查询表示符号实际元件生产厂结构封装类型参数及代换型号Z0SST310Tem F SOT23J310 n-ch jfetZ0PDZ2.4B Phi I SOD323 2.4V 0.4W zenerZ08SST308Sil F SOT23J308 n-ch jfetZ09SST309Sil F SOT23J309 n-ch jfetZ10SST310Sil F SOT23J310 n-ch jfetZ1BZX84-C4V7Phi C SOT230.3W zener 4.7VZ1SSTJ211Sil F SOT23J211 n-ch jfetZ1PDZ2.7B Phi I SOD323 2.7V 0.4W zenerZ1IMZ1A Roh DE2SC2414 npn,2SA1037AK pnp Z1BZV49C4V7Zet O SOT891W ±5% zener 4.7VZ2BZX84-C5V1Phi C SOT230.3W zener 4.7VZ2SSTJ212Sil F SOT23J212 n-ch jfetZ2IMZ2A Roh DF2SC2414 npn,2SA1037AK pnp Z2PDZ3.0B Phi I SOD323 3.0V 0.4W zenerZ2BZV49C5V1Zet O SOT891W ±5% zener 5.1VZ2U FMMTA63Zet N SOT23MPSA63Z2V FMMTA64Zet N SOT23MPSA64Z3BZX84-C5V6Phi C SOT230.3W zener 5.6VZ3PDZ3.3B Phi I SOD323 3.3V 0.4W zenerZ32SK1078Tos T SOT89n-ch mosfet 60V 0.8AZ3BZV49C5V6Zet O SOT891W ±5% zener 5.6VZ4BZX84-C6V2Phi C SOT230.3W zener 6.2VZ4PDZ3.6B Phi I SOD323 3.6V 0.4W zenerZ42SK1079Tos T SOT89n-ch mosfet 100V 0.6AZ4BZV49C6V2Zet O SOT891W ±5% zener 6.2VZ5BZX84-C6V8Phi C SOT230.3W zener 6.8VZ5PDZ3.9B Phi I SOD323 3.9V 0.4W zenerZ52SK1717Tos T SOT89n-ch mosfet 60V 2AZ5BZV49C6V8Zet O SOT891W ±5% zener 6.8VZ6BZX84-C7V5Phi C SOT230.3W zener 7.5VZ6PDZ4.3B Phi I SOD323 4.3V 0.4W zenerZ62SJ238Tos T SOT89p-ch mosfet 60V 1AZ6BZV49C7V5Zet O SOT891W ±5% zener 7.5VZ7BZX84-C8V2Phi C SOT230.3W zener 8.2VZ7PDZ4.7B Phi I SOD323 4.7V 0.4W zenerZ7BZV49C8V2Zet O SOT891W ±5% zener 8.2VZ8BZX84-C9V1Phi C SOT230.3W zener 9.1VZ8PDZ5.1B Phi I SOD323 5.1V 0.4W zenerZ8BZV49C9V1Zet O SOT891W ±5% zener 9.1VZ9BZX84-C10Phi C SOT230.3W zener 10VZ9PDZ5.6B Phi I SOD323 5.6V 0.4W zenerZ1BZV49C10Zet O SOT891W ±5% zener 10VZ10SST310Sil F SOT23J310 n-ch jfetZ11BZX84-C2V4Phi C SOT230.3W zener 2.4V ±5%Z12BZX84-C2V7Phi C SOT230.3W zener 2.7V ±5%Z13BZX84-C3V0Phi C SOT230.3W zener 3.0V ±5%Z14BZX84-C3V3Phi C SOT230.3W zener 3.3V ±5%Z15BZX84-C3V6Phi C SOT230.3W zener 3.6V ±5%Z16BZX84-C3V9Phi C SOT230.3W zener 3.9V ±5%Z17BZX84-C4V3Phi C SOT230.3W zener 4.3V ±5%Z21DTC113ZE Rho N EMT3npn dtr 1k0 + 10k 50V 100mA Z21DTC113ZUA Rho N SC70npn dtr 1k0 + 10k 50V 100mA Z21DTC113ZKA Rho N SC59npn dtr 1k0 + 10k 50V 100mA Z50BZX84-B2V4Phi C SOT230.3W zener 2.4V ±2%Z51BZX84-B2V7Phi C SOT230.3W zener 2.7V ±2%Z52BZX84-B3V0Phi C SOT230.3W zener 3.0V ±2%Z53BZX84-B3V3Phi C SOT230.3W zener 3.3V ±2%Z54BZX84-B3V6Phi C SOT230.3W zener 3.6V ±2%Z55BZX84-B3V9Phi C SOT230.3W zener 3.9V ±2%Z56BZX84-B4V3Phi C SOT230.3W zener 4.3V ±2%Z57BZX84-B4V7Phi C SOT230.3W zener 4.7V ±2%Z58BZX84-B5V1Phi C SOT230.3W zener 5.1V ±2%Z59BZX84-B5V6Phi C SOT230.3W zener 5.6V ±2%Z60BZX84-B6V2Phi C SOT230.3W zener 6.2V ±2%Z61BZX84-B6V8Phi C SOT230.3W zener 6.8V ±2%Z62BZX84-B7V5Phi C SOT230.3W zener 7.5V ±2%Z63BZX84-B8V2Phi C SOT230.3W zener 8.2V ±2%Z64BZX84-B9V1Phi C SOT230.3W zener 9.1V ±2%Z65BZX84-B10Phi C SOT230.3W zener 10V ±2%Z66BZX84-B11Phi C SOT230.3W zener 11V ±2%Z67BZX84-B12Phi C SOT230.3W zener 12V ±2%Z68BZX84-B13Phi C SOT230.3W zener 13V ±2%Z69BZX84-B15Phi C SOT230.3W zener 15V ±2%Z70BZX84-B16Phi C SOT230.3W zener 16V ±2%Z71BZX84-B18Phi C SOT230.3W zener 18V ±2%Z72BZX84-B20Phi C SOT230.3W zener 20V ±2%Z73BZX84-B22Phi C SOT230.3W zener 22V ±2%Z74BZX84-B24Phi C SOT230.3W zener 24V ±2% Z75BZX84-B27Phi C SOT230.3W zener 27V ±2% Z76BZX84-B30Phi C SOT230.3W zener 30V ±2% Z77BZX84-B33Phi C SOT230.3W zener 33V ±2% Z78BZX84-B36Phi C SOT230.3W zener 36V ±2% Z79BZX84-B39Phi C SOT230.3W zener 39V ±2% Z80BZX84-B43Phi C SOT230.3W zener 43V ±2% Z81BZX84-B47Phi C SOT230.3W zener 47V ±2% Z82BZX84-B51Phi C SOT230.3W zener 51V ±2% Z83BZX84-B56Phi C SOT230.3W zener 56V ±2% Z84BZX84-B62Phi C SOT230.3W zener 62V ±2% Z85BZX84-B68Phi C SOT230.3W zener 68V ±2% Z86BZX84-B75Phi C SOT230.3W zener 75V ±2% ZA BZX284-C7V5Phi I SOD1100.4W zener 7.5V ±5% ZA PDZ6.2B Phi I SOD323 6.2V 0.4W zenerZB FMMT4123Zet N SOT232N4123ZB PDZ6.8B Phi I SOD323 6.8V 0.4W zenerZB BZX284-C8V2Phi I SOD1100.4W zener 8.2V ±5% ZC FMMT4124Zet N SOT232N4124ZC BZX284-C9V1Phi I SOD1100.4W zener 9.1V ±5% ZC PDZ7.5B Phi I SOD3237.5V 0.4W zenerZD FMMT4125Zet N SOT232N4125ZD MMBT4125Mot N SOT232N4125ZD BZX284-C10Phi I SOD1100.4W zener 10V ±5% ZD PDZ8.2B Phi I SOD3238.2V 0.4W zenerZE FMMT4126Zet N SOT232N4126ZE MMBT4123Nat N SOT232N4123ZE BZX284-C11Phi I SOD1100.4W zener 11V ±5% ZE PDZ9.1B Phi I SOD3239.1V 0.4W zenerZF BZX284-C12Phi I SOD1100.4W zener 12V ±5% ZF PDZ10B Phi I SOD32310V 0.4W zenerZG BZX284-C13Phi I SOD1100.4W zener 13V ±5% ZG PDZ11B Phi I SOD32311V 0.4W zenerZH BZX284-C15Phi I SOD1100.4W zener 15V ±5% ZH PDZ12B Phi I SOD32312V 0.4W zenerZHK SM2Z5V1STM I2W SMD 5.1V 2W zenerZHL SM2Z5V6STM I2W SMD 5.6V 2W zenerZHW SM2Z12STM I2W SMD12V 2W zenerZI BZX284-C16Phi I SOD1100.4W zener 16V ±5%ZJ BZX284-C18Phi I SOD1100.4W zener 18V ±5%ZJ PDZ13B Phi I SOD32313V 0.4W zenerZJF SM2Z18STM I2W SMD18V 2W zenerZJQ SM2Z30STM I2W SMD30V 2W zenerZK BZX284-C20Phi I SOD1100.4W zener 20V ±5%ZK PDZ15B Phi I SOD32315V 0.4W zenerZKR SM2Z150STM I2W SMD150V 2W zenerZL BZX284-C22Phi I SOD1100.4W zener 22V ±5%ZL PDZ16B Phi I SOD32316V 0.4W zenerZM BZX284-C24Phi I SOD1100.4W zener 24V ±5% ZM PDZ18B Phi I SOD32318V 0.4W zenerZN BZX284-C27Phi I SOD1100.4W zener 27V ±5%ZN PDZ20B Phi I SOD32320V 0.4W zenerZO BZX284-C30Phi I SOD1100.4W zener 30V ±5%ZP BZX284-C33Phi I SOD1000.4W zener 33V ±5%ZP PDZ22B Phi I SOD32322V 0.4W zenerZQ BZX284-C36Phi I SOD1100.4W zener 36V ±5% ZQ PDZ24B Phi I SOD32324V 0.4W zenerZ-Q2PC4081Q Phi N SOT323gp npn hfe 120-270ZtQ2PC4081Q Phi N SOT323gp npn hfe 120-270ZR MSD1819A Mot N SOT323npn gp 50VZR BZX284-C39Phi I SOD1100.4W zener 39V ±5%ZR PDZ27B Phi I SOD32327V 0.4W zenerZ-R2PC4081R Phi N SOT323gp npn hfe 180-390ZtR2PC4081R Phi N SOT323gp npn hfe 180-390ZS BZX284-C43Phi I SOD1100.4W zener 43V ±5%ZS PDZ30B Phi I SOD32330V 0.4W zenerZS1ZHCS1000Zet E SOT2330V 1A schottky diode ZS5ZHCS500Zet E SOT2340V 0.5A schottky diode ZS7ZHCS750Zet E SOT2330V 0.75A schottky diode Z-S2PC4081S Phi N SOT323gp npn hfe 270-560ZtS2PC4081S Phi N SOT323gp npn hfe 270-560ZT BZX284-C47Phi I SOD1100.4W zener 47V ±5%。

M40e和M160 CIP安装说明说明书

••••••••••••••••••••••••••••••••••••••••••••••••M40e and M160 CIP Installation InstructionsPart No. 530-005365-01Revision 223 January 2002This document describes how to remove and replace the Connector Interface Panel (CIP) on a Juniper Networks M40e Internet router or M160 Internet router.For additional installation and configuration information, see the following documentation: M40e Internet Router Hardware GuideM160 Internet Router Hardware Installation GuideJUNOS Internet Software Operational Mode Command Reference JUNOS Internet software configuration guidesContentsCIP Description (1)Routing Engine Interface Ports.......................................................................................3BITS Input Ports.............................................................................................................4Alarm Relay Contacts.....................................................................................................5Tools and Parts Required ......................................................................................................5Replace the CIP (5)Remove the CIP.............................................................................................................5Install the CIP.................................................................................................................7Replace Cables and Wire Connecting to the CIP.. (8)Replace the Management Ethernet Cable.......................................................................9Replace the Console or Auxiliary Cable........................................................................10Replace Alarm Relay Wire............................................................................................11Contact Juniper Networks. (11)CIP DescriptionThe Connector Interface Panel (CIP) is located at the left side of the FPC card cage. Figure 1 shows an M40e router, and the location of the CIP and other components is the same on teh M160 router. The CIP houses interface connectors and alarm relay contacts, shown in Figure 2 and described in the following sections: Routing Engine Interface Ports on page 3 BITS Input Ports on page 4 Alarm Relay Contacts on page 5CIP Description••••••••••••••••••••••••••••••••••••••••••••••••••••••••••Figure 1: Front of Chassis••••••••••••••••••••••••••••••••••••••••••••••••••••••••••CIP DescriptionFigure 2: Connector Interface PanelRouting Engine Interface PortsOn the upper half of the CIP are two sets of ports for connecting the Routing Engines to one or more external devices on which system operators can issue JUNOS command-lineinterface (CLI) commands to manage the router. The set of ports labeled HOST0 connects to the Routing Engine in the slot labeled RE0, and the set labeled HOST1 connects to the Routing Engine in the slot labeled RE1. The ports in each set are labeled as follows:ETHERNET —Connects the Routing Engine through an Ethernet connection to a management LAN (or any other device that plugs into an Ethernet connection) forout-of-band management. The port uses an autosensing RJ-45 connector to support both 10- and 100-Mbps connections. Two small LEDs on the left edge of the port indicate the connection in use: the amber LED lights for a 10-Mbps connection and the green LED lights for a 100-Mbps connection. CONSOLE —Connects the Routing Engine to a system console through an RS-232 (EIA-232) serial cable. AUXILIARY —Connects the Routing Engine to a laptop, modem, or other auxiliary device through an RS-232 (EIA-232) serial cable.CIP Description••••••••••••••••••••••••••••••••••••••••••••••••••••••••••Figure3 shows the ports that connect to the Routing Engine installed in slot RE0. Thearrangement of ports for the Routing Engine installed in slot RE1 is the same.Figure 3: Interface Ports for Routing Engine 0BITS Input PortsIn the center of the CIP are two ports labeled BITS A and BITS B (see Figure4). The routerdoes not support BITS input, so these ports do not function.Figure 4: Alarm Relay Contacts and BITS Input Ports••••••••••••••••••••••••••••••••••••••••••••••••••••••••••Tools and Parts RequiredAlarm Relay ContactsAt the bottom of the CIP are two relay contacts for connecting the router to externalalarm-reporting devices, the upper labeled RED ALARM and the lower YELLOW ALARM (see Figure 4). A system condition that causes either the red or yellow alarm LED to light on the craft interface also activates the corresponding alarm relay contact. For instructions for attaching a device to the alarm relay contacts, see “Replace Alarm Relay Wire” on page 11.Tools and Parts RequiredTo replace the CIP , you need the following tools and parts: Phillips (+) screwdriver, numbers 1 and 2 ESD grounding wrist strap Electrostatic bag or antistatic mat2.5mm flat-blade (–) screwdriver, for alarm relay terminal block Wire cutters, if attaching to an external alarm-reporting deviceReplace the CIPThe CIP is located to the left side of the FPC card cage, as shown in Figure 1. It weighs about 6.5lb (3kg). The CIP is field-replaceable, but you must power down the router before removing or installing it.To replace the CIP , perform the following procedures: Remove the CIP on page 5 Install the CIP on page 7Remove the CIPTo remove the CIP , follow this procedure:1.Place an electrostatic bag or antistatic mat on a flat, stable surface to receive the CIP .2.Attach an ESD strap to your bare wrist and connect the strap to one of the ESD points on the chassis.3.On the console or other management device connected to each Routing Engine, enter CLI operational mode and issue the following command to shut down the router software. For more information, see the JUNOS Internet Software Operational Mode Command Reference .user@host> request system haltWait to continue until a message appears on the console confirming that the operating system has halted.Replace the CIP••••••••••••••••••••••••••••••••••••••••••••••••••••••••••4.Power down the router:On an M160 router or a DC-powered M40e router, flip both circuit breaker switcheson the circuit breaker box to the OFF (O) position.On an AC-powered M40e router, flip the circuit breaker switch on both power supplyfaceplates to the OFF (O) position.5.Disconnect any external devices connected to the CIP. For more information, see“Replace Cables and Wire Connecting to the CIP” on page8.ing a Phillips screwdriver, loosen and remove the screws at the top and bottom of theCIP faceplate.7.Grasp the CIP and slide it out of the chassis (see Figure5, which shows an M40e router).Place it in the electrostatic bag or on the antistatic mat prepared in Step 1.Figure 5: Remove the CIPBe sure to slide the CIP straight out of the slot to avoiddamaging the connecting pins on the front of themidplane.••••••••••••••••••••••••••••••••••••••••••••••••••••••••••Replace the CIPInstall the CIPTo install the CIP , follow this procedure:1.Verify that the router is powered down.2.Carefully insert the rear of the CIP into the guides at the top and bottom of the CIP slot located to the left of the FPC card cage (see Figure 6, which shows an M40e router).3.Slide the CIP into the chassis until it contacts the midplane.4.Using a Phillips screwdriver, tighten the screws on the top and bottom of the CIP faceplate.5.Reattach any external devices connected to the CIP . For instructions, see “Replace Cables and Wire Connecting to the CIP” on page 8.6.Turn on the power to the management device that is connected to the Routing Engine through the CIP port labeled CONSOLE , AUXILIARY , or ETHERNET .7.Flip one circuit breaker switch to the ON ( | ) position (on the faceplate of one power supply on an AC-powered M40e router or on the circuit breaker box of an M160 router or DC-powered M40e router). Observe the LEDs on the power supply faceplate: On a properly functioning AC power supply, the green OUTPUT OK LED blinks rapidly for a short time, then lights steadily. On a properly functioning DC power supply, the green CB ON LED lights steadily, the blue OUTPUT OK LED blinks for a short time, then lights steadily, and the amber CB OFF LED does not light.8.Flip the second circuit breaker switch and observe the LEDs on the second power supply faceplate. They should light as described in Step 7.9.On the management device that was attached in Step 5, observe the trace of the startup sequence to confirm correct startup. If you can issue CLI commands over the connection when the startup is complete, the CIP is installed correctly.If you have connected to a Routing Engine through the port labeled ETHERNET , theflashing of the activity indicator LEDs (either the amber 10Mbps or the green 100Mbps LED) indicates that the CIP is connected properly and the Routing Engine is active.Be sure to slide the CIP straight into the slot to avoid damaging the connecting pins on the front of the midplane.Replace Cables and Wire Connecting to the CIP••••••••••••••••••••••••••••••••••••••••••••••••••••••••••Figure 6: Install the CIPReplace Cables and Wire Connecting to the CIPT able1 lists the specifications for the cables that connect to management ports and the wiresthat connect to the alarm relay contacts.Table 1: Routing Engine Interface Cable and Wire SpecificationsCable Type Cable Specification Cable Supplied Maximum LengthRouterReceptacleRouting Engineconsole or auxiliaryinterfaceRS-232 (EIA-232) serial One 6-ft (1.83-m) lengthwith DB-9/DB-9connectors6ft (1.83m) DB-9 maleRouting EngineEthernet interfaceCategory 5 cable orequivalent suitable for100BaseT operationOne 15-ft (4.92-m) lengthwith RJ-45/RJ-45connectors328ft (100m) RJ-45autosensingAlarm relay contacts24-A WG to 12-A WG(0.20 to 3.33mm2) wireNo None—••••••••••••••••••••••••••••••••••••••••••••••••••••••••••Replace Cables and Wire Connecting to the CIPTo replace the cables that connect external management devices to the CIP , perform the procedures described in the following sections: Replace the Management Ethernet Cable on page 9 Replace the Console or Auxiliary Cable on page 10 Replace Alarm Relay Wire on page 11Replace the Management Ethernet CableThe cable that plugs into the port labeled ETHERNET on the CIP connects the Routing Engine to a network for out-of-band management. The port accepts a cable with RJ-45/RJ-45 connectors, which is provided with the router as described in T able 1.To replace the cable connecting to a management network, follow this procedure: 1.If a cable is already installed in the ETHERNET port, perform the following steps:a.Depress the tab on the connector (which is shown in Figure 7) and pull the connector straight out of the port. Figure 3 shows the ports that connect to the Routing Engine installed in slot RE0. The arrangement of ports for the Routing Engine in slot RE1 is the same.b.Repeat to disconnect the cable from the network device.2.Plug one end of the replacement Ethernet cable into the ETHERNET port for the appropriate host module. See Figure 3.3.Plug the other end of the cable into the network device.Figure 7: Routing Engine Ethernet Cable ConnectorReplace Cables and Wire Connecting to the CIP••••••••••••••••••••••••••••••••••••••••••••••••••••••••••Replace the Console or Auxiliary CableThe cable that plugs into the port labeled CONSOLE on the CIP connects the Routing Engineto a system console, whereas the cable that plugs into the port labeled AUXILIARY connectsthe Routing Engine to a laptop, modem, or other auxiliary device. Both ports accept anRS-232 (EIA-232) serial cable with DB-9/DB-9 connectors. One such cable is provided withthe router, as detailed in T able1. If you want to connect a device to both ports, you mustsupply another cable.To replace the cable connecting to a management console or auxiliary device, follow thisprocedure:1.If a cable is already installed in the CONSOLE or AUXILIARY port, perform the followingsteps:a.Turn off the power to the console or auxiliary device.b.Unscrew the screws securing the cable connector to the port, using a 2.5-mmflat-blade screwdriver if necessary. Figure8 shows the cable connector.c.Pull the cable connector straight out of the port.d.Disconnect the cable from the console or auxiliary device.2.Plug the female end of the replacement serial cable into the appropriate CONSOLE orAUXILIARY port. Figure3 shows the ports that connect to the Routing Engine installed inslot RE0. The arrangement of ports for the Routing Engine in slot RE1 is the same.3.Tighten the screws on the connector.4.Power on the auxiliary or console device.Figure 8: Console and Auxiliary Serial Port Connector••••••••••••••••••••••••••••••••••••••••••••••••••••••••••M40e and M160 CIP Installation Instructions11Contact Juniper NetworksReplace Alarm Relay WireThe relay contacts on the CIP labeled RED ALARM and YELLOW ALARM connect to external alarm devices that report conditions that trigger a red or yellow alarm (see Figure 4). The terminal blocks that plug into the alarm relay contacts are supplied with the router. They accept wire of any gauge between 24-A WG and 12-A WG (0.20 and 3.33mm 2), which is not provided. Use the gauge of wire appropriate for the external device that you are connecting to the terminal block.To replace the wires connecting to an alarm-reporting device, follow this procedure:1.Prepare the required length of replacement wire with gauge between 24-A WG and 12-A WG (0.20 and 3.33mm 2).2.Select the appropriate relay contact—the upper contact for a device that reports high priority (red) alarms, or the lower contact for the device that reports lower priority (yellow) alarms.3.Disconnect the existing wire at the external device.4.Using a 2.5mm flat-blade screwdriver, loosen the small screws on the face of the terminal block and remove the block from the relay contact.5.Using a 2.5mm flat-blade screwdriver, loosen the small screws on the side of theterminal block. Remove existing wires from the slots in the front of the block and insert replacement wires. Tighten the screws to secure the wire.6.Orient the terminal block according to the labels to the left of the chosen relay contact (NC means “normally closed,” C means “common,” and NO means “normally open”). See Figure 4.7.Plug the terminal block into the relay contact and use a 2.5mm flat-blade screwdriver to tighten the screws on the face of the block.8.Attach the other end of the replacement wire to the external device.Contact Juniper NetworksFor technical support, contact Juniper Networks at *******************. If you are reporting a software problem, please issue the following command from the CLI before contacting support:user@host> request support information | save filenameFor documentation issues, contact Juniper Networks at ********************.To provide a core file to Juniper Networks for analysis, gzip the file, rename the file to include your company name, copy it to :pub/incoming , and then send the filename, along with software version information (the output of the show version command) and the configuration, to *******************.Contact Juniper Networks••••••••••••••••••••••••••••••••••••••••••••••••••••••••••M40e and M160 CIP Installation Instructions12Juniper Networks is a registered trademark of Juniper Networks, Inc. Internet Processor, Internet Processor II, JUNOS, JUNOScript, M5, M10, M20, M40, M40e, and M160 are trademarks of Juniper Networks, Inc. All other trademarks, service marks, registered trademarks, or registered service marks may be the property of their respective owners. All specifications are subject to change without notice.Copyright © 2002, Juniper Networks, Inc. All rights reserved. Printed in USA.。

MRF6404中文资料

12 9 6 3 0 –3 –6 –9 VCC = 26 V ICQ = 150 mA f = 1.88 GHz
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8
12
16
20
24
28
32
36
40Βιβλιοθήκη Pout, OUTPUT POWER (WATTS)
Figure 4. Intermodulation versus Output Power
Figure 5. AM/PM Conversion
(1) Thermal resistance is determined under specified RF operating condition.
REV 2
©MOTOROLA RF DEVICE DATA Motorola, Inc. 1996
MRF6404 MRF6404K 1
元器件交易网
MRF6404 MRF6404K
30 W, 1.88 GHz RF POWER TRANSISTOR NPN SILICON
CASE 395C–01, STYLE 1
MAXIMUM RATINGS
Rating Collector–Emitter Voltage Collector–Emitter Voltage Emitter–Base Voltage Collector–Current — Continuous Total Device Dissipation @ TC = 25°C Derate above 25°C Storage Temperature Range Operating Junction Temperature Symbol VCEO VCES VEBO IC PD Tstg TJ Value 24 60 4 10 125 0.71 – 65 to +150 200 Unit Vdc Vdc Vdc Adc Watts W/°C °C °C

ATMEGA640V资料

Features•High Performance, Low Power AVR® 8-Bit Microcontroller •Advanced RISC Architecture–135 Powerful Instructions – Most Single Clock Cycle Execution –32 x 8 General Purpose Working Registers–Fully Static Operation–Up to 16 MIPS Throughput at 16 MHz–On-Chip 2-cycle Multiplier•Non-volatile Program and Data Memories–64K/128K/256K Bytes of In-System Self-Programmable FlashEndurance: 10,000 Write/Erase Cycles–Optional Boot Code Section with Independent Lock BitsIn-System Programming by On-chip Boot ProgramTrue Read-While-Write Operation–4K Bytes EEPROMEndurance: 100,000 Write/Erase Cycles–8K Bytes Internal SRAM–Up to 64K Bytes Optional External Memory Space–Programming Lock for Software Security•JTAG (IEEE std. 1149.1 compliant) Interface–Boundary-scan Capabilities According to the JTAG Standard–Extensive On-chip Debug Support–Programming of Flash, EEPROM, Fuses, and Lock Bits through the JTAG Interface •Peripheral Features–Two 8-bit Timer/Counters with Separate Prescaler and Compare Mode–Four 16-bit Timer/Counter with Separate Prescaler, Compare- and Capture Mode –Real Time Counter with Separate Oscillator–Four 8-bit PWM Channels–Six/Twelve PWM Channels with Programmable Resolution from 2 to 16 Bits(ATmega1281/2561, ATmega640/1280/2560)–Output Compare Modulator–8/16-channel, 10-bit ADC (ATmega1281/2561, ATmega640/1280/2560)–Two/Four Programmable Serial USART (ATmega1281/2561,ATmega640/1280/2560)–Master/Slave SPI Serial Interface–Byte Oriented 2-wire Serial Interface–Programmable Watchdog Timer with Separate On-chip Oscillator–On-chip Analog Comparator–Interrupt and Wake-up on Pin Change•Special Microcontroller Features–Power-on Reset and Programmable Brown-out Detection–Internal Calibrated Oscillator–External and Internal Interrupt Sources–Six Sleep Modes: Idle, ADC Noise Reduction, Power-save, Power-down, Standby, and Extended Standby•I/O and Packages–54/86 Programmable I/O Lines (ATmega1281/2561, ATmega640/1280/2560)–64-pad QFN/MLF, 64-lead TQFP (ATmega1281/2561)–100-lead TQFP, 100-ball CBGA (ATmega640/1280/2560)–RoHS/Fully Green•Temperature Range:–-40°C to 85°C Industrial•Ultra-Low Power Consumption–Active Mode: 1 MHz, 1.8V: 510 µA–Power-down Mode: 0.1 µA at 1.8V•Speed Grade (see “Maximum speed vs. VCC” on page 377):–ATmega640V/ATmega1280V/ATmega1281V:0 - 4 MHz @ 1.8 - 5.5V, 0 - 8 MHz @ 2.7 - 5.5V–ATmega2560V/ATmega2561V:0 - 2 MHz @ 1.8 - 5.5V, 0 - 8 MHz @ 2.7 - 5.5V–ATmega640/ATmega1280/ATmega1281:0 - 8 MHz @ 2.7 - 5.5V, 0 - 16 MHz @ 4.5 - 5.5V–ATmega2560/ATmega2561:0 - 16 MHz @ 4.5 - 5.5V 8-bit Microcontroller64K/128K/256K Bytes In-System ProgrammableATmega640/V ATmega1280/V ATmega1281/V2ATmega640/1280/1281/2560/25612549KS–AVR–01/07Pin ConfigurationsFigure 1. TQFP-pinout ATmega640/1280/25603ATmega640/1280/1281/2560/25612549KS–AVR–01/07Figure 2. CBGA-pinout ATmega640/1280/2560Table 1. CBGA-pinout ATmega640/1280/2560.12345678910A G N D AREF PF0PF2PF5PK0PK3PK6G N D VCC B AVCC PG5PF1PF3PF6PK1PK4PK7PA0PA2C PE2PE0PE1PF4PF7PK2PK5PJ7PA1PA3D PE3PE4PE5PE6PH2PA4PA5PA6PA7PG2E PE7PH0PH1PH3PH5PJ6PJ5PJ4PJ3PJ2F VCC PH4PH6PB0PL4PD1PJ1PJ0PC7G N D G G N D PB1PB2PB5PL2PD0PD5PC5PC6VCC H PB3PB4RESET PL1PL3PL7PD4PC4PC3PC2J PH7PG3PB6PL0XT AL2PL6PD3PC1PC0PG1KPB7PG4VCCG N DXT AL1PL5PD2PD6PD7PG04ATmega640/1280/1281/2560/25612549KS–AVR–01/07Figure 3. Pinout ATmega1281/2561N ote:The large center pad underneath the QF N /MLF package is made of metal and internally connected to G N D. It should be soldered or glued to the board to ensure good mechani-cal stability. If the center pad is left unconnected, the package might loosen from the board.DisclaimerTypical values contained in this datasheet are based on simulations and characteriza-tion of other AVR microcontrollers manufactured on the same process technology. Min.and Max values will be available after the device is characterized.5ATmega640/1280/1281/2560/25612549KS–AVR–01/07OverviewThe ATmega640/1280/1281/2560/2561 is a low-power CMOS 8-bit microcontroller based on the AVR enhanced RISC architecture. By executing powerful instructions in a single clock cycle, the ATmega640/1280/1281/2560/2561 achieves throughputs approaching 1 MIPS per MHz allowing the system designer to optimize power consumption versus processing speed.Block DiagramFigure 4. Block Diagram6ATmega640/1280/1281/2560/25612549KS–AVR–01/07The AVR core combines a rich instruction set with 32 general purpose working registers.All the 32 registers are directly connected to the Arithmetic Logic Unit (ALU), allowing two independent registers to be accessed in one single instruction executed in one clock cycle. The resulting architecture is more code efficient while achieving throughputs up to ten times faster than conventional CISC microcontrollers.The ATmega640/1280/1281/2560/2561 provides the following features: 64K/128K/256K bytes of In-System Programmable Flash with Read-W hile-W rite capabilities, 4K bytes EEPROM, 8K bytes SRAM, 54/86 general purpose I/O lines, 32 general purpose work-ing registers, Real Time Counter (RTC), six flexible Timer/Counters with compare modes and P W M, 4 USARTs, a byte oriented 2-wire Serial Interface, a 16-channel, 10-bit ADC with optional differential input stage with programmable gain, programmable W atchdog Timer with Internal Oscillator, an SPI serial port, IEEE std. 1149.1 compliant JTAG test interface, also used for accessing the On-chip Debug system and program-ming and six software selectable power saving modes. The Idle mode stops the CPU while allowing the SRAM, Timer/Counters, SPI port, and interrupt system to continue functioning. The Power-down mode saves the register contents but freezes the Oscilla-tor, disabling all other chip functions until the next interrupt or Hardware Reset. In Power-save mode, the asynchronous timer continues to run, allowing the user to main-tain a timer base while the rest of the device is sleeping. The ADC N oise Reduction mode stops the CPU and all I/O modules except Asynchronous Timer and ADC, to min-imize switching noise during ADC conversions. In Standby mode, the Crystal/Resonator Oscillator is running while the rest of the device is sleeping. This allows very fast start-up combined with low power consumption. In Extended Standby mode, both the main Oscillator and the Asynchronous Timer continue to run.The device is manufactured using Atmel’s high-density nonvolatile memory technology.The On-chip ISP Flash allows the program memory to be reprogrammed in-system through an SPI serial interface, by a conventional nonvolatile memory programmer, or by an On-chip Boot program running on the AVR core. The boot program can use any interface to download the application program in the application Flash memory. Soft-ware in the Boot Flash section will continue to run while the Application Flash section is updated, providing true Read-W hile-W rite operation. By combining an 8-bit RISC CPU with In-System Self-Programmable Flash on a monolithic chip, the Atmel ATmega640/1280/1281/2560/2561 is a powerful microcontroller that provides a highly flexible and cost effective solution to many embedded control applications.The ATmega640/1280/1281/2560/2561 AVR is supported with a full suite of program and system development tools including: C compilers, macro assemblers, program debugger/simulators, in-circuit emulators, and evaluation kits.7ATmega640/1280/1281/2560/25612549KS–AVR–01/07Comparison Between ATmega1281/2561 and ATmega640/1280/2560Each device in the ATmega640/1280/1281/2560/2561 family differs only in memory size and number of pins. Table 2 summarizes the different configurations for the six devices.Pin DescriptionsVCC Digital supply voltage.GNDGround.Port A (PA7..PA0)Port A is an 8-bit bi-directional I/O port with internal pull-up resistors (selected for each bit). The Port A output buffers have symmetrical drive characteristics with both high sink and source capability. As inputs, Port A pins that are externally pulled low will source current if the pull-up resistors are activated. The Port A pins are tri-stated when a reset condition becomes active, even if the clock is not running.P o r t A a l s o s e r v e s t h e f u n c t i o n s o f v a r i o u s s p e c i a l f e a t u r e s o f t h e ATmega640/1280/1281/2560/2561 as listed on page 91.Port B (PB7..PB0)Port B is an 8-bit bi-directional I/O port with internal pull-up resistors (selected for each bit). The Port B output buffers have symmetrical drive characteristics with both high sink and source capability. As inputs, Port B pins that are externally pulled low will source current if the pull-up resistors are activated. The Port B pins are tri-stated when a reset condition becomes active, even if the clock is not running.Port B has better driving capabilities than the other ports.P o r t B a l s o s e r v e s t h e f u n c t i o n s o f v a r i o u s s p e c i a l f e a t u r e s o f t h e ATmega640/1280/1281/2560/2561 as listed on page 92.Port C (PC7..PC0)Port C is an 8-bit bi-directional I/O port with internal pull-up resistors (selected for each bit). The Port C output buffers have symmetrical drive characteristics with both high sink and source capability. As inputs, Port C pins that are externally pulled low will source current if the pull-up resistors are activated. The Port C pins are tri-stated when a reset condition becomes active, even if the clock is not running.P o r t C a l s o s e r v e s t h e f u n c t i o n s o f s p e c i a l f e a t u r e s o f t h e ATmega640/1280/1281/2560/2561 as listed on page 95.Port D (PD7..PD0)Port D is an 8-bit bi-directional I/O port with internal pull-up resistors (selected for each bit). The Port D output buffers have symmetrical drive characteristics with both high sink and source capability. As inputs, Port D pins that are externally pulled low will sourceTable 2. Configuration SummaryDevice Flash EEPROM RAM GeneralPurpose I/O pins16 bits resolution PWM channelsSerial USARTsADC ChannelsA Tmega64064KB 4KB 8KB 8612416A Tmega1280128KB 4KB 8KB 8612416A Tmega1281128KB 4KB 8KB 54628A Tmega2560256KB 4KB 8KB 8612416A Tmega2561256KB4KB8KB546288ATmega640/1280/1281/2560/25612549KS–AVR–01/07current if the pull-up resistors are activated. The Port D pins are tri-stated when a reset condition becomes active, even if the clock is not running.P o r t D a l s o s e r v e s t h e f u n c t i o n s o f v a r i o u s s p e c i a l f e a t u r e s o f t h e ATmega640/1280/1281/2560/2561 as listed on page 97.Port E (PE7..PE0)Port E is an 8-bit bi-directional I/O port with internal pull-up resistors (selected for each bit). The Port E output buffers have symmetrical drive characteristics with both high sink and source capability. As inputs, Port E pins that are externally pulled low will source current if the pull-up resistors are activated. The Port E pins are tri-stated when a reset condition becomes active, even if the clock is not running.P o r t E a l s o s e r v e s t h e f u n c t i o n s o f v a r i o u s s p e c i a l f e a t u r e s o f t h e ATmega640/1280/1281/2560/2561 as listed on page 99.Port F (PF7..PF0)Port F serves as analog inputs to the A/D Converter.Port F also serves as an 8-bit bi-directional I/O port, if the A/D Converter is not used.Port pins can provide internal pull-up resistors (selected for each bit). The Port F output buffers have symmetrical drive characteristics with both high sink and source capability.As inputs, Port F pins that are externally pulled low will source current if the pull-up resistors are activated. The Port F pins are tri-stated when a reset condition becomes active, even if the clock is not running. If the JTAG interface is enabled, the pull-up resis-tors on pins PF7(TDI), PF5(TMS), and PF4(TCK) will be activated even if a reset occurs.Port F also serves the functions of the JTAG interface.Port G (PG5..PG0)Port G is a 6-bit I/O port with internal pull-up resistors (selected for each bit). The Port G output buffers have symmetrical drive characteristics with both high sink and source capability. As inputs, Port G pins that are externally pulled low will source current if the pull-up resistors are activated. The Port G pins are tri-stated when a reset condition becomes active, even if the clock is not running.P o r t G a l s o s e r v e s t h e f u n c t i o n s o f v a r i o u s s p e c i a l f e a t u r e s o f t h e ATmega640/1280/1281/2560/2561 as listed on page 105.Port H (PH7..PH0)Port H is a 8-bit bi-directional I/O port with internal pull-up resistors (selected for each bit). The Port H output buffers have symmetrical drive characteristics with both high sink and source capability. As inputs, Port H pins that are externally pulled low will source current if the pull-up resistors are activated. The Port H pins are tri-stated when a reset condition becomes active, even if the clock is not running.P o r t H a l s o s e r v e s t h e f u n c t i o n s o f v a r i o u s s p e c i a l f e a t u r e s o f t h e ATmega640/1280/2560 as listed on page 107.Port J (PJ7..PJ0)Port J is a 8-bit bi-directional I/O port with internal pull-up resistors (selected for each bit). The Port J output buffers have symmetrical drive characteristics with both high sink and source capability. As inputs, Port J pins that are externally pulled low will source current if the pull-up resistors are activated. The Port J pins are tri-stated when a reset condition becomes active, even if the clock is not running.P o r t J a l s o s e r v e s t h e f u n c t i o n s o f v a r i o u s s p e c i a l f e a t u r e s o f t h e ATmega640/1280/2560 as listed on page 109.Port K (PK7..PK0)Port K serves as analog inputs to the A/D Converter.9ATmega640/1280/1281/2560/25612549KS–AVR–01/07Port K is a 8-bit bi-directional I/O port with internal pull-up resistors (selected for each bit). The Port K output buffers have symmetrical drive characteristics with both high sink and source capability. As inputs, Port K pins that are externally pulled low will source current if the pull-up resistors are activated. The Port K pins are tri-stated when a reset condition becomes active, even if the clock is not running.P o r t K a l s o s e r v e s t h e f u n c t i o n s o f v a r i o u s s p e c i a l f e a t u r e s o f t h e ATmega640/1280/2560 as listed on page 111.Port L (PL7..PL0)Port L is a 8-bit bi-directional I/O port with internal pull-up resistors (selected for each bit). The Port L output buffers have symmetrical drive characteristics with both high sink and source capability. As inputs, Port L pins that are externally pulled low will source current if the pull-up resistors are activated. The Port L pins are tri-stated when a reset condition becomes active, even if the clock is not running.P o r t L a l s o s e r v e s t h e f u n c t i o n s o f v a r i o u s s p e c i a l f e a t u r e s o f t h e ATmega640/1280/2560 as listed on page 113.Reset input. A low level on this pin for longer than the minimum pulse length will gener-ate a reset, even if the clock is not running. The minimum pulse length is given in Table 26 on page 58. Shorter pulses are not guaranteed to generate a reset.XTAL1Input to the inverting Oscillator amplifier and input to the internal clock operating circuit.XTAL2Output from the inverting Oscillator amplifier.AVCCAVCC is the supply voltage pin for Port F and the A/D Converter. It should be externally connected to V CC , even if the ADC is not used. If the ADC is used, it should be con-nected to V CC through a low-pass filter.AREFThis is the analog reference pin for the A/D Converter.ResourcesA comprehensive set of development tools and application notes, and datasheets are available for download on /avr.10ATmega640/1280/1281/2560/25612549KS–AVR–01/07Register SummaryAddressNameBit 7Bit 6Bit 5Bit 4Bit 3Bit 2Bit 1Bit 0Page(0x1FF)Reserved --------...Reserved --------(0x13F)Reserved (0x13E)Reserved (0x13D)Reserved (0x13C)Reserved (0x13B)Reserved (0x13A)Reserved (0x139)Reserved (0x138)Reserved (0x137)Reserved (0x136)UDR3 USART3 I/O Data Registerpage 227(0x135)UBRR3H ----USART3 Baud Rate Register High Bytepage 231(0x134)UBRR3L USART3 Baud Rate Register Low Bytepage 231(0x133)Reserved --------(0x132)UCSR3C UMSEL31UMSEL30UPM31UPM30USBS3UCSZ31UCSZ30UCPOL3page 244(0x131)UCSR3B RXCIE3TXCIE3UDRIE3RXE N 3TXE N 3UCSZ32RXB83TXB83page 243(0x130)UCSR3A RXC3TXC3UDRE3FE3DOR3UPE3U2X3MPCM3page 242(0x12F)Reserved --------(0x12E)Reserved --------(0x12D)OCR5CH Timer/Counter5 - Output Compare Register C High Byte page 167(0x12C)OCR5CL Timer/Counter5 - Output Compare Register C Low Byte page 167(0x12B)OCR5BH Timer/Counter5 - Output Compare Register B High Byte page 167(0x12A)OCR5BL Timer/Counter5 - Output Compare Register B Low Byte page 167(0x129)OCR5AH Timer/Counter5 - Output Compare Register A High Byte page 167(0x128)OCR5AL Timer/Counter5 - Output Compare Register A Low Byte page 167(0x127)ICR5H Timer/Counter5 - Input Capture Register High Byte page 168(0x126)ICR5L Timer/Counter5 - Input Capture Register Low Byte page 168(0x125)TC N T5H Timer/Counter5 - Counter Register High Byte page 165(0x124)TC N T5L Timer/Counter5 - Counter Register Low Bytepage 165(0x123)Reserved --------(0x122)TCCR5C FOC5A FOC5B FOC5C-----page 164(0x121)TCCR5B IC N C5ICES5-W GM53W GM52CS52CS51CS50page 162(0x120)TCCR5A COM5A1COM5A0COM5B1COM5B0COM5C1COM5C0W GM51W GM50page 160(0x11F)Reserved --------(0x11E)Reserved --------(0x11D)Reserved --------(0x11C)Reserved --------(0x11B)Reserved --------(0x11A)Reserved --------(0x119)Reserved --------(0x118)Reserved --------(0x117)Reserved --------(0x116)Reserved --------(0x115)Reserved --------(0x114)Reserved --------(0x113)Reserved --------(0x112)Reserved --------(0x111)Reserved --------(0x110)Reserved --------(0x10F)Reserved --------(0x10E)Reserved --------(0x10D)Reserved --------(0x10C)Reserved --------(0x10B)PORTL PORTL7PORTL6PORTL5PORTL4PORTL3PORTL2PORTL1PORTL0page 118(0x10A)DDRL DDL7DDL6DDL5DDL4DDL3DDL2DDL1DDL0page 118(0x109)PI N L PI N L7PI N L6PI N L5PI N L4PI N L3PI N L2PI N L1PI N L0page 118(0x108)PORTK PORTK7PORTK6PORTK5PORTK4PORTK3PORTK2PORTK1PORTK0page 118(0x107)DDRK DDK7DDK6DDK5DDK4DDK3DDK2DDK1DDK0page 118(0x106)PI N K PI N K7PI N K6PI N K5PI N K4PI N K3PI N K2PI N K1PI N K0page 118(0x105)PORTJ PORTJ7PORTJ6PORTJ5PORTJ4PORTJ3PORTJ2PORTJ1PORTJ0page 118(0x104)DDRJ DDJ7DDJ6DDJ5DDJ4DDJ3DDJ2DDJ1DDJ0page 118(0x103)PI N J PI N J7PI N J6PI N J5PI N J4PI N J3PI N J2PI N J1PI N J0page 118(0x102)PORTHPORTH7PORTH6PORTH5PORTH4PORTH3PORTH2PORTH1PORTH0page 117ATmega640/1280/1281/2560/2561Address Name Bit 7Bit 6Bit 5Bit 4Bit 3Bit 2Bit 1Bit 0Page(0x101)DDRH DDH7DDH6DDH5DDH4DDH3DDH2DDH1DDH0page 117(0x100)PI N H PI N H7PI N H6PI N H5PI N H4PI N H3PI N H2PI N H1PI N H0page 117 (0xFF)Reserved--------(0xFE)Reserved--------(0xFD)Reserved--------(0xFC)Reserved--------(0xFB)Reserved--------(0xFA)Reserved--------(0xF9)Reserved--------(0xF8)Reserved--------(0xF7)Reserved--------(0xF6)Reserved--------(0xF5)Reserved--------(0xF4)Reserved--------(0xF3)Reserved--------(0xF2)Reserved--------(0xF1)Reserved--------(0xF0)Reserved--------(0xEF)Reserved--------(0xEE)Reserved--------(0xED)Reserved--------(0xEC)Reserved--------(0xEB)Reserved-------(0xEA)Reserved--------(0xE9)Reserved--------(0xE8)Reserved--------(0xE7)Reserved-------(0xE6)Reserved--------(0xE5)Reserved--------(0xE4)Reserved--------(0xE3)Reserved-------(0xE2)Reserved--------(0xE1)Reserved-------(0xE0)Reserved-------(0xDF)Reserved--------(0xDE)Reserved--------(0xDD)Reserved-------(0xDC)Reserved--------(0xDB)Reserved--------(0xDA)Reserved--------(0xD9)Reserved-------(0xD8)Reserved--------(0xD7)Reserved--------(0xD6)UDR2 USART2 I/O Data Register page 227 (0xD5)UBRR2H----USART2 Baud Rate Register High Byte page 231 (0xD4)UBRR2L USART2 Baud Rate Register Low Byte page 231 (0xD3)Reserved--------(0xD2)UCSR2C UMSEL21UMSEL20UPM21UPM20USBS2UCSZ21UCSZ20UCPOL2page 244 (0xD1)UCSR2B RXCIE2TXCIE2UDRIE2RXE N2TXE N2UCSZ22RXB82TXB82page 243 (0xD0)UCSR2A RXC2TXC2UDRE2FE2DOR2UPE2U2X2MPCM2page 242 (0xCF)Reserved--------(0xCE)UDR1 USART1 I/O Data Register page 227 (0xCD)UBRR1H----USART1 Baud Rate Register High Byte page 231 (0xCC)UBRR1L USART1 Baud Rate Register Low Byte page 231 (0xCB)Reserved--------(0xCA)UCSR1C UMSEL11UMSEL10UPM11UPM10USBS1UCSZ11UCSZ10UCPOL1page 244 (0xC9)UCSR1B RXCIE1TXCIE1UDRIE1RXE N1TXE N1UCSZ12RXB81TXB81page 243 (0xC8)UCSR1A RXC1TXC1UDRE1FE1DOR1UPE1U2X1MPCM1page 242 (0xC7)Reserved--------(0xC6)UDR0 USART0 I/O Data Register page 227 (0xC5)UBRR0H----USART0 Baud Rate Register High Byte page 231 (0xC4)UBRR0L USART0 Baud Rate Register Low Byte page 231 (0xC3)Reserved--------(0xC2)UCSR0C UMSEL01UMSEL00UPM01UPM00USBS0UCSZ01UCSZ00UCPOL0page 244 (0xC1)UCSR0B RXCIE0TXCIE0UDRIE0RXE N0TXE N0UCSZ02RXB80TXB80page 243 (0xC0)UCSR0A RXC0TXC0UDRE0FE0DOR0UPE0U2X0MPCM0page 243Address Name Bit 7Bit 6Bit 5Bit 4Bit 3Bit 2Bit 1Bit 0Page (0xBF)Reserved--------(0xBE)Reserved--------(0xBD)T W AMR T W AM6T W AM5T W AM4T W AM3T W AM2T W AM1T W AM0-page 274 (0xBC)T W CR T W I N T T W EA T W STA T W STO T WW C T W E N-T W IE page 271 (0xBB)T W DR 2-wire Serial Interface Data Register page 273 (0xBA)T W AR T W A6T W A5T W A4T W A3T W A2T W A1T W A0T W GCE page 273 (0xB9)T W SR T W S7T W S6T W S5T W S4T W S3-T W PS1T W PS0page 272 (0xB8)T W BR2-wire Serial Interface Bit Rate Register page 271 (0xB7)Reserved--------(0xB6)ASSR-EXCLK AS2TC N2UB OCR2AUB OCR2BUB TCR2AUB TCR2BUB page 188 (0xB5)Reserved--------(0xB4)OCR2B Timer/Counter2 Output Compare Register B page 195 (0xB3)OCR2A Timer/Counter2 Output Compare Register A page 195 (0xB2)TC N T2 Timer/Counter2 (8 Bit)page 195 (0xB1)TCCR2B FOC2A FOC2B--W GM22CS22CS21CS20page 194 (0xB0)TCCR2A COM2A1COM2A0COM2B1COM2B0--W GM21W GM20page 195 (0xAF)Reserved--------(0xAE)Reserved--------(0xAD)OCR4CH Timer/Counter4 - Output Compare Register C High Byte page 167 (0xAC)OCR4CL Timer/Counter4 - Output Compare Register C Low Byte page 167 (0xAB)OCR4BH Timer/Counter4 - Output Compare Register B High Byte page 166 (0xAA)OCR4BL Timer/Counter4 - Output Compare Register B Low Byte page 166 (0xA9)OCR4AH Timer/Counter4 - Output Compare Register A High Byte page 166 (0xA8)OCR4AL Timer/Counter4 - Output Compare Register A Low Byte page 166 (0xA7)ICR4H Timer/Counter4 - Input Capture Register High Byte page 168 (0xA6)ICR4L Timer/Counter4 - Input Capture Register Low Byte page 168 (0xA5)TC N T4H Timer/Counter4 - Counter Register High Byte page 165 (0xA4)TC N T4L Timer/Counter4 - Counter Register Low Byte page 165 (0xA3)Reserved--------(0xA2)TCCR4C FOC4A FOC4B FOC4C-----page 164 (0xA1)TCCR4B IC N C4ICES4-W GM43W GM42CS42CS41CS40page 162 (0xA0)TCCR4A COM4A1COM4A0COM4B1COM4B0COM4C1COM4C0W GM41W GM40page 160 (0x9F)Reserved--------(0x9E)Reserved--------(0x9D)OCR3CH Timer/Counter3 - Output Compare Register C High Byte page 166 (0x9C)OCR3CL Timer/Counter3 - Output Compare Register C Low Byte page 166 (0x9B)OCR3BH Timer/Counter3 - Output Compare Register B High Byte page 166 (0x9A)OCR3BL Timer/Counter3 - Output Compare Register B Low Byte page 166 (0x99)OCR3AH Timer/Counter3 - Output Compare Register A High Byte page 166 (0x98)OCR3AL Timer/Counter3 - Output Compare Register A Low Byte page 166 (0x97)ICR3H Timer/Counter3 - Input Capture Register High Byte page 168 (0x96)ICR3L Timer/Counter3 - Input Capture Register Low Byte page 168 (0x95)TC N T3H Timer/Counter3 - Counter Register High Byte page 165 (0x94)TC N T3L Timer/Counter3 - Counter Register Low Byte page 165 (0x93)Reserved--------(0x92)TCCR3C FOC3A FOC3B FOC3C-----page 164 (0x91)TCCR3B IC N C3ICES3-W GM33W GM32CS32CS31CS30page 162 (0x90)TCCR3A COM3A1COM3A0COM3B1COM3B0COM3C1COM3C0W GM31W GM30page 160 (0x8F)Reserved--------(0x8E)Reserved--------(0x8D)OCR1CH Timer/Counter1 - Output Compare Register C High Byte page 166 (0x8C)OCR1CL Timer/Counter1 - Output Compare Register C Low Byte page 166 (0x8B)OCR1BH Timer/Counter1 - Output Compare Register B High Byte page 166 (0x8A)OCR1BL Timer/Counter1 - Output Compare Register B Low Byte page 166 (0x89)OCR1AH Timer/Counter1 - Output Compare Register A High Byte page 166 (0x88)OCR1AL Timer/Counter1 - Output Compare Register A Low Byte page 166 (0x87)ICR1H Timer/Counter1 - Input Capture Register High Byte page 168 (0x86)ICR1L Timer/Counter1 - Input Capture Register Low Byte page 168 (0x85)TC N T1H Timer/Counter1 - Counter Register High Byte page 165 (0x84)TC N T1L Timer/Counter1 - Counter Register Low Byte page 165 (0x83)Reserved--------(0x82)TCCR1C FOC1A FOC1B FOC1C-----page 164 (0x81)TCCR1B IC N C1ICES1-W GM13W GM12CS12CS11CS10page 162 (0x80)TCCR1A COM1A1COM1A0COM1B1COM1B0COM1C1COM1C0W GM11W GM10page 160 (0x7F)DIDR1------AI N1D AI N0D page 278 (0x7E)DIDR0ADC7D ADC6D ADC5D ADC4D ADC3D ADC2D ADC1D ADC0D page 300ATmega640/1280/1281/2560/2561Address Name Bit 7Bit 6Bit 5Bit 4Bit 3Bit 2Bit 1Bit 0Page (0x7D)DIDR2ADC15D ADC14D ADC13D ADC12D ADC11D ADC10D ADC9D ADC8D page 300 (0x7C)ADMUX REFS1REFS0ADLAR MUX4MUX3MUX2MUX1MUX0page 294 (0x7B)ADCSRB-ACME--MUX5ADTS2ADTS1ADTS0page 277,295,,299 (0x7A)ADCSRA ADE N ADSC ADATE ADIF ADIE ADPS2ADPS1ADPS0page 297 (0x79)ADCH ADC Data Register High byte page 298 (0x78)ADCL ADC Data Register Low byte page 298 (0x77)Reserved--------(0x76)Reserved--------(0x75)XMCRB XMBK----XMM2XMM1XMM0page 36 (0x74)XMCRA SRE SRL2SRL1SRL0SR W11SR W10SR W01SR W00page 34 (0x73)TIMSK5--ICIE5-OCIE5C OCIE5B OCIE5A TOIE5page 169 (0x72)TIMSK4--ICIE4-OCIE4C OCIE4B OCIE4A TOIE4page 169 (0x71)TIMSK3--ICIE3-OCIE3C OCIE3B OCIE3A TOIE3page 169 (0x70)TIMSK2-----OCIE2B OCIE2A TOIE2page 197 (0x6F)TIMSK1--ICIE1-OCIE1C OCIE1B OCIE1A TOIE1page 169 (0x6E)TIMSK0-----OCIE0B OCIE0A TOIE0page 135 (0x6D)PCMSK2PCI N T23PCI N T22PCI N T21PCI N T20PCI N T19PCI N T18PCI N T17PCI N T16page 81 (0x6C)PCMSK1PCI N T15PCI N T14PCI N T13PCI N T12PCI N T11PCI N T10PCI N T9PCI N T8page 81 (0x6B)PCMSK0PCI N T7PCI N T6PCI N T5PCI N T4PCI N T3PCI N T2PCI N T1PCI N T0page 82 (0x6A)EICRB ISC71ISC70ISC61ISC60ISC51ISC50ISC41ISC40page 79 (0x69)EICRA ISC31ISC30ISC21ISC20ISC11ISC10ISC01ISC00page 78 (0x68)PCICR-----PCIE2PCIE1PCIE0page 80 (0x67)Reserved--------(0x66)OSCCAL Oscillator Calibration Register page 48 (0x65)PRR1--PRTIM5PRTIM4PRTIM3PRUSART3PRUSART2PRUSART1page 56 (0x64)PRR0PRT W I PRTIM2PRTIM0-PRTIM1PRSPI PRUSART0PRADC page 55 (0x63)Reserved--------(0x62)Reserved--------(0x61)CLKPR CLKPCE---CLKPS3CLKPS2CLKPS1CLKPS0page 48 (0x60)W DTCSR W DIF W DIE W DP3W DCE W DE W DP2W DP1W DP0page 660x3F (0x5F)SREG I T H S V N Z C page 120x3E (0x5E)SPH SP15SP14SP13SP12SP11SP10SP9SP8page 140x3D (0x5D)SPL SP7SP6SP5SP4SP3SP2SP1SP0page 140x3C (0x5C)EI N D-------EI N D0page 150x3B (0x5B)RAMPZ------RAMPZ1RAMPZ0page 150x3A (0x5A)Reserved--------0x39 (0x59)Reserved--------0x38 (0x58)Reserved--------0x37 (0x57)SPMCSR SPMIE R WW SB SIGRD R WW SRE BLBSET PG W RT PGERS SPME N page 3400x36 (0x56)Reserved--------0x35 (0x55)MCUCR JTD--PUD--IVSEL IVCE page 66,76,115,3140x34 (0x54)MCUSR---JTRF W DRF BORF EXTRF PORF page 3140x33 (0x53)SMCR----SM2SM1SM0SE page 510x32 (0x52)Reserved--------0x31 (0x51)OCDR OCDR7OCDR6OCDR5OCDR4OCDR3OCDR2OCDR1OCDR0page 3070x30 (0x50)ACSR ACD ACBG ACO ACI ACIE ACIC ACIS1ACIS0page 2770x2F (0x4F)Reserved--------0x2E (0x4E)SPDR SPI Data Register page 2080x2D (0x4D)SPSR SPIF W COL-----SPI2X page 2070x2C (0x4C)SPCR SPIE SPE DORD MSTR CPOL CPHA SPR1SPR0page 2060x2B (0x4B)GPIOR2General Purpose I/O Register 2page 340x2A (0x4A)GPIOR1General Purpose I/O Register 1page 340x29 (0x49)Reserved--------0x28 (0x48)OCR0B Timer/Counter0 Output Compare Register B page 1340x27 (0x47)OCR0A Timer/Counter0 Output Compare Register A page 1340x26 (0x46)TC N T0 Timer/Counter0 (8 Bit)page 1340x25 (0x45)TCCR0B FOC0A FOC0B--W GM02CS02CS01CS00page 1330x24 (0x44)TCCR0A COM0A1COM0A0COM0B1COM0B0--W GM01W GM00page 1300x23 (0x43)GTCCR TSM-----PSRASY PSRSY N C page 173, 1980x22 (0x42)EEARH----EEPROM Address Register High Byte page 320x21 (0x41)EEARL EEPROM Address Register Low Byte page 320x20 (0x40)EEDR EEPROM Data Register page 320x1F (0x3F)EECR--EEPM1EEPM0EERIE EEMPE EEPE EERE page 320x1E (0x3E)GPIOR0General Purpose I/O Register 0page 340x1D (0x3D)EIMSK I N T7I N T6I N T5I N T4I N T3I N T2I N T1I N T0page 790x1C (0x3C)EIFR I N TF7I N TF6I N TF5I N TF4I N TF3I N TF2I N TF1I N TF0page 80。

函数信号发生器计数器

EE1640C型函数信号发生器/计数器使用说明书EE1640C型函数信号发生器/计数器整体外观如下图所示.其中各按键和旋钮功能如下:（1）频率显示窗口：显示输出信号的频率或外测频信号的频率。

（2）幅度显示窗口：显示函数输出信号的幅度。

（3）频率微调电位器：调节此旋钮可改变输出频率的1个频程。

（4）输出波形占空比调节旋钮：调节此旋钮可改变输出信号的对称性。

当电位器处在中心位置时，则输出对称信号。

当此旋钮关闭时，也输出对称信号。

（5）函数信号输出信号直流电平调节旋钮：调节范围：–10V～+10V（空载），-5V～+5V（50Ω负载）当电位器处在中心位置时，则为0电平。

当此旋钮关闭时，也为0电平。

（6）函数信号输出幅度调节旋钮：调节范围20dB（7）扫描宽度/调制度调节旋钮：调节此电位器可调节扫频输出的频率宽度。

在外测频时，逆时针旋到底（绿灯亮），为外输入测量信号经过低通开关进入测量系统。

在调频时调节此电位器可调节频偏范围，调幅时调节此电位器可调节调幅调制度，FSK调制时调节此电位器可调节高低频率差值，逆时针旋到底时为关调制。

（8）扫描速率调节旋钮：调节此电位器可以改变内扫描的时间长短。

在外测频时，逆时针旋到底（绿灯亮），为外输入测量信号经过衰减“20dB”进入测量系统。

（9）CMOS电平调节旋钮：调节此电位器可以调节输出的CMOS的电平。

当电位器逆时针旋到底（绿灯亮）时，输出为标准的TTL电平。

（10）左频段选择按钮：每按一次此按钮，输出频率向左调整一个频段。

（11）右频段选择按钮：每按一次此按钮，输出频率向右调整一个频段。

（12）波形选择按钮：可选择正弦波、三角波、脉冲波输出。

（13）衰减选择按钮：可选择信号输出的0 dB、20dB、40 dB、60 dB衰减的切换。

（14）幅值选择按钮：可选择正弦波的幅度显示的峰－峰值与有效值之间的切换。

（15）方式选择按钮：可选择多种扫描方式、多种内外调制方式以及外测频方式。

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56
29
EM620FV8B（双C / S）
+
(0.0)
EMLSI LOGO
1 y x
Pre-charge Circuit
28
- C1 / W1：DC探索Sun Yatsen模/硅片@热温度 - C2 / W2：DC / AC探索Sun Yatsen模具/硅片@热温度
板说明 Name CS1,CS2 OE WE A0~A17 I/O0~I/O7
3
芯片中文手册,看全文,戳
EM620FV8B系列
低功耗 ,256Kx8 SRAM 绝对最大额定值 * 参数
任何引脚相对于VSS电压供应相对Vss 电压Vcc 功耗工作温度
符
V IN , V OUT V CC PD TA
起码
-0.2 to 4.0V -0.2 to 4.0V 1.0 -40到85
mA
输出低电压输出高电压待机电流（TTL）
V OL V OH ISB
V V mA
-
待机电流（CMOS）
ISB1
CS1V CC-0.2V, CS2V CC-0.2V（CS控制）或0VCS20.2V（CS2控制）, 其他输入= 0〜V CC
（典型值条件：V （最大条件：V o CC =3.3V @ 25 C) CC=3.6V @ 85 o C)
Unit
V V W
oC
* 强调超过上述"绝对最大额定值"可能会对设备造成永久性损坏.功能一般
通货膨胀应限制在推荐工作条件.暴露在绝对最大额定值条件下长时间可能会影响其可靠性.
功能说明 CS1
H X X L L L L
CS2
X L X H H H H
OE
X X X H H L X
WE
X X X H H H L
.
电容
(f =1MHz, T A =25 o C)
符测试条件
Item
输入电容输入/输出继电器电容 1.电容进行采样,而不是100％测试.
Min
-
Max
8 10
Unit
pF pF
C IN C IO
V IN=0V V IO =0V
DC及经营特色
参数输入漏电流输出漏电流工作电源符测试条件
Min -1 -1 45ns 55ns 70ns 2.4
性能片选输入输出使能输入写使能输入地址输入数据输入/输出
Name Vcc Vss NC
性能电源接地无连接 Row Select
Memory Array 1024 x 2048
I/O Circuit Column Select
Control Logic
粘结说明 2M全CMOS SRAM芯片拥有总56pads.参阅到结合焊盘位置和识别表X,Y坐标. EMLSI建议使用键合线对芯片背面上Vss焊盘,以提高抗噪声能力.
备注
0.0 0.1 0.2 0.3
0.1版本 0.2版本 0.3版本
2007年6月21日, 2007年7月2日,
0.4
0.4版本
V IH 从2.0V到2.2V电平变化
8月16个,2007年
芯片中文手册,看全文,戳
EM620FV8B系列
低功耗 ,256Kx8 SRAM
256K×8位低功耗和低电压 CMOS静态 RAM
参数电源电压接地输入高电压输入低电压符
1)
Min
V CC V SS V IH V IL 2.7 0 2.2 -0.2 3)
Typ
3.3 0 -
Max
3.6 0 V CC + 0.2 2) 0.6
Unit
V V V V
1. 2. 3. 4.
TA = -40到85 o C,另有说明过冲：V CC 在情况下脉冲宽度20ns+ 2.0V 冲：-2.0 V情况下,脉冲宽度为20ns 过高和过低采样,而不是100％测试 1)
周期时间=1μs,100％关税,I IO=0mA,
CS10.2V, CS2V CC -0.2V, VIN INV CC-0.2V
周期时间=最小,I IO=0毫安,100％关税,
平均工作电流
ICC2
CS1=V IL, CS2=V IH, VIN=V IL 或V IH IOL = 2.1mA IOH = -1.0mA CS1=V IH, CS2=V IL,其他输入= V
芯片中文手册,看全文,戳
EM620FV8B系列
低功耗 ,256Kx8 SRAM
文档标题
256K×8位低功耗和低电压全 CMOS静态 RAM
修订记录
版本号历史
初稿草案
草案日期
年6月7,2007年删除字节选项信息删除UB,LB信息修订VOH（2.2V至2.4V）,TOH（15ns 至为10ns ）, TOE-55（为30ns 至25ns ）,TWP-55（为45nS至40ns ）, TWP-70（55ns 至50ns ）,tWHZ-70（为25ns 至20ns ）, ICC（2mA至3毫安）,ICC1（2mA至3毫安）二零零七年六月十五日
2
芯片中文手册,看全文,戳
EM620FV8B系列
低功耗 ,256Kx8 SRAM
功能规格
有3个类别EMLSI模具及硅片产品,这是C1和C2模具和W1和W2晶圆,分别. 每个芯片和芯片支持专用特点,探讨其规格范围内电气参数.以下是简要信息模具和晶圆分类.请参阅包装规格为更多信息,但这些参数并不防护证在裸芯片和晶片.
I/O 0-7
高阻高阻高阻高阻高阻数据输出数据在
Mode
取消选择取消选择取消选择输出禁用输出禁用
Power
支持支持支持主动主动主动主动
Read Write
注：X表示不关心. （必须是高或低状态）
4
芯片中文手册,看全文,戳
EM620FV8B系列
低功耗 ,256Kx8 SRAM 推荐直流工作条件
IH 或V IL
Typ -
Max 1 1 3 3 35 30 25 0.4 0.3
Unit uA uA mA mA
ILI ILO ICC ICC1
VIN=VSS 到V CC CS1=V IH 或CS2 = V IL 或OE = V IH 或WE = V IL VIO =VSS 到V CC IIO =0mA, CS1=V IL, CS2=WE=V IH, V IN=V IH 或V IL
C1级别死亡或 W1水平 WAFER 直流参数是通过规范C1级芯片或W1晶圆级测量.直流参数在70℃温测定 perature,即要求 ‘Hot DC排序"其他参数都不能防护证,防护证包括设备可靠性.详情请参阅以鉴定报告设备可靠性和封装级数据表电气参数. C2级死亡或 W2水平 WAFER
直流参数和选择AC参数测量与C2级芯片或W2级晶圆. 在70℃温度下,它被称为测试
C2DC特性
死亡和W2晶圆是基于C1级芯片和W1级硅片DC规格测试.直流和指定AC参数是
‘Hot DC与AC选择性排序".其他参数都不能防护证,担防护
包括设备可靠性.请参阅鉴定报告对设备可靠性和封装级数据表电气参数.
C2级芯片和W2级晶圆探针下AC参数. tRC,TAA,控烟 tWC, tCW
包装
单个设备将被包装在防静电托盘. 芯片托盘：用于模具2英寸方形饼样式载体与各模具分格.通常所说松饼包,每个托盘具有选择设备腔体尺寸,可轻松装卸,防止旋转.本身是由导电材料制成盘,以减少破坏危险,从静电模具放电.该芯片载体将被贴上以下信息：
EMLSI晶圆批号 EMLSI部件号
数量罐包装：罐包装是由EMLSI制造和使用由我们提供所要求裸片晶圆众多客户.该包是包括清洁纸来包装片和海绵几乎脆弱塑料盒之间晶片,高缓冲海绵.每包通常有24片,然后几个包放入大箱子视晶圆量.
债券焊盘＃1顶部
芯片载体模具方向
储存和处理
EMLSI建议存储在与过滤氮气受控环境模具.该运营商必须开放在ESD安全环境时,检查和组装.
特征
- 工艺技术：0.15μm全CMOS - 组织：256K X8 - 电源电压 = EM620FV8B : 2.7~3.6V - 低数据防护持电压：1.5V - 三态输出和TTL兼容 - 包装产品设计45/55/70ns
一般物理规格 - 抛光裸硅背面模具表面 - 典型模具厚度= 725um +/- 15微米 - 典型顶层金属化： =金属（钛/铝铜/锡/ ARCSiON /二氧化硅）：5.2K埃 - 顶边钝化： =钝化（HDP / pNIT / PIQ）：5.4K埃 - 晶圆直径：8英寸选项
LF
-
11)
10
uA
NOTES
1.典型值是在Vcc = 3.3V,T测量
o A= 25 C和不是100％测试.