STD616A-1资料

3 2 1
IPAK TO-251
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol VCES VCEO V EBO IC ICM IB IBM Ptot Tstg Tj
Parameter Collector-Emit ter Volt age (VBE = 0) Collector-Emitter Voltage (IB = 0) Emitt er-Base Voltage (IC = 0) Collector Current Collector Peak Current (tp < 5 ms) Base Current Base Peak Current (tp < 5 ms) Total Dissipation at Tc = 25 oC St orage Temperature Max. Operating Junction Temperature
P032N_E 4/5
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STD616A-1
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
Collector-Emitter Saturation Voltage
IC = 1 mA
IC = 250 mA IC = 0.8 A
IB = 65 mA IB = 250 mA
VBE(s at)∗ Base-Emitt er Saturation Voltage
IC = 250 mA IC = 0.8 A
April 1999
Value 1000 450
12 1.6 2.4 0.8 1.2 20 -65 to 150 150
Unit V V V A A A A W oC oC
1/5
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STD616A-1
THERMAL DATA
Rthj-ca se Thermal Resistance Junction-case
Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Mexico - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A.
PACKAGE IN TUBE s MINIMUM LOT-TO-LOT SPREAD FOR
RELIABLE OPERATION
APPLICATIONS: s SWITCH MODE POWER SUPPLIES
DESCRIPTION The STD616A-1 is manufactured using High Voltage Multi Epitaxial Planar technology for high switching speeds and high voltage withstand capability.
IB = 65 mA IB = 250 mA
hF E∗ DC Current Gain
IC = 200 µA IC = 300 mA IC = 480 mA IC = 1.6 A
VCE = 5 V VCE = 5 V VCE = 5 V VCE = 5 V
RESISTIVE LOAD
ton
Turn On Time
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© 1999 STMicroelectronics – Printed in Italy – All Rights Reserved STMicroelectronics GROUP OF COMPANIES
Max
6 .2 5
oC/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
S ymb ol
P a ra m et er
Test Conditions
ICES Collector Cut-off Current (VBE = 0 V)
IC = 0.8 A IB2 = -0.4 A
INDUCTIVE LO AD
ts
Storage Time
tf
Fall Time
Vcl = 300 V IB1 = 65 mA L = 200 µH
IC = 250 mA IB2 = -130 mA
INDUCTIVE LO AD
ts
Turn On Time
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®
STD616A-1
HIGH VOLTAGE NPN POWER TRANSISTOR
s REVERSE PINS OUT Vs STANDARD IPAK (TO-251) PACKAGE
s HIGH VOLTAGE CAPABILITY s HIGH DC CURRENT GAIN s THROUGH-HOLE IPAK (TO-251) POWER
Max. 50 0.5
0.3 0.5 1.0 1.2
0.2 5 0.65
1 2.5 0.35
5 0.5
2.5 0.25
Unit µA mA V
V
V V V V
µs µs µs
µs µs µs
µs µs
µs µs
2/5
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Safe Operating Area
Derating Curve
STD616A-1
Reverse Biased SOA
3/5
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STD616A-1
DIM.
A A1 A3 B B2 B3 B5 B6 C C2 D E G H L L1 L2 V1
TO-251 (IPAK) MECHANICAL DATA
MIN. 2.20 0.90 0.70 0.64 5.20
VCE = 1000 V VCE = 1000 V Tj = 125 oC
VCEO(sus) Collector-Emitter Sustaining Voltage
IC = 100 mA L = 25 mH
VBEO VCE(sat )∗
Collector-Base Sustaining Voltage
.
5/5
0.45 0.48 6.00 6.40 4.40 15.90 9.00 0.80
mm TYP.
0.30
0.80 10o
MAX. 2.40 1.10 1.30 0.90 5.40 0.85
0.95 0.60 0.60 6.20 6.60 4.60 16.30 9.40 1.20 1.00
MIN. 0.087 0.035 0.028 0.025 0.204
tf
Storage Time
Fall Time
Vcl = 300 V IB1 = 160 mA L = 200 µH
∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
IC = 0.8 A IB2= -0.4 A
Min. Typ.
450 12
17 25 12 4
ts
Storage Time
tf
Fall Time
VCC = 250 V IB1 = 65 mA
IC = 250 mA IB2 = -130 mA
RESISTIVE LOAD
ton
Turn On Time
ts
Storage Ti = 250 V IB1 = 160 mA
0.018 0.019 0.237 0.252 0.173 0.626 0.354 0.031
inch TYP.
0.012
0.031 10o
MAX. 0.094 0.043 0.051 0.035 0.213 0.033
0.037 0.024 0.024 0.244 0.260 0.181 0.642 0.370 0.047 0.039