BCR8CM-8资料

Tj = 125°C
101
Tj = 25°C
100 7 5 3 2 10–1 0.6 1.0 1.4 1.8 2.2 2.6 3.0 3.4 3.8 ON-STATE VOLTAGE (V)
CONDUCTION TIME (CYCLES AT 60Hz)
Feb.1999
元器件交易网
4.5 4
16 MAX
3.2±0.2
1.3
∗
12.5 MIN 3.8 MAX
TYPE NAME VOLTAGE CLASS
1.0
0.8
2.5
2.5
7.0
φ3.6±0.2 0.5
2.6
123 24 1 2 33 4
∗
Measurement point of case temperature
• IT (RMS) ........................................................................ 8A • VDRM ..............................................................400V/600V • IFGT !, IRGT !, IRGT # ......................... 30mA (20mA) V5
8
10
12
14
16
RMS ON-STATE CURRENT (A)
RMS ON-STATE CURRENT (A)
Feb.1999
元器件交易网
MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
1
T1 TERMINAL T2 TERMINAL GATE TERMINAL T2 TERMINAL
TO-220
APPLICATION Contactless AC switches, light drimmer, electric flasher unit, control of household equipment such as TV sets · stereo · refrigerator · washing machine · infrared kotatsu · carpet · electric fan, solenoid drivers, small motor control, copying machine, electric tool, other general purpose control applications
Conditions Commercial frequency, sine full wave 360° conduction, Tc =105°C 60Hz sinewave 1 full cycle, peak value, non-repetitive Value corresponding to 1 cycle of half wave 60Hz, surge on-state current
Symbol IT (RMS) ITSM I2t PGM PG (AV) VGM IGM Tj Tstg —
Parameter RMS on-state current Surge on-state current I2t for fusing Peak gate power dissipation Average gate power dissipation Peak gate voltage Peak gate current Junction temperature Storage temperature Weight Typical value
Voltage class
VDRM (V)
Commutating voltage and current waveforms (inductive load)
SUPPLY VOLTAGE MAIN CURRENT MAIN VOLTAGE (dv/dt)c (di/dt)c
TIME
TIME TIME VD
GATE TRIGGER VOLTAGE VS. JUNCTION TEMPERATURE 100 (%) 103 7 5 4 3 2 102 7 5 4 3 2 101 –60 –40 –20 0 20 40 60 80 100 120 140 JUNCTION TEMPERATURE (°C) TYPICAL EXAMPLE TRANSIENT THERMAL IMPEDANCE (°C/W)
4.5
Ratings 8 80 26 5 0.5 10 2 –40 ~ +125 –40 ~ +125 2.0
Unit A A A2s W W V A °C °C g
V1. Gate open.
Feb.1999
元器件交易网
MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
元器件交易网
MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
BCR8CM
MEDIUM POWER USE
NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
BCR8CM
OUTLINE DRAWING
10.5 MAX
Dimensions in mm
V3
Typ. — — — — — — — — — — —
Max. 2.0 1.5 1.5 1.5 1.5 30 V 5 30 V 5 30 V 5 — 2.0 —
Unit mA V V V V mA mA mA V °C/ W V/µ s
V2. Measurement using the gate trigger characteristics measurement circuit. V3. The critical-rate of rise of the off-state commutating voltage is shown in the table below. V4. The contact thermal resistance R th (c-f) in case of greasing is 1.0°C/W. V5. High sensitivity (I GT≤20mA) is also available. (IGT item 1 ) (dv/dt) c Symbol R 8 400 L 10 V/µ s R 12 600 L 10 — Min. — 1. Junction temperature Tj =125° C 2. Rate of decay of on-state commutating current (di/dt)c=–4A/ms 3. Peak off-state voltage VD =400V Unit Test conditions
MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
BCR8CM
MEDIUM POWER USE
NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
GATE CHARACTERISTICS 100 (%) 3 2 GATE VOLTAGE (V) 101 7 5 3 2 100 7 5 3 2 IFGT I IRGT I, IRGT III 10–1 VGD = 0.2V 7 5 101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104 GATE CURRENT (mA) VGM = 10V PG(AV) = 0.5W PGM = 5W IGM = 2A VGT = 1.5V GATE TRIGGER CURRENT (Tj = t°C) GATE TRIGGER CURRENT (Tj = 25°C) 103 7 5 4 3 2 102 7 5 4 3 2
BCR8CM
MEDIUM POWER USE
NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
ELECTRICAL CHARACTERISTICS
Symbol IDRM VTM VFGT ! VRGT ! VRGT # IFGT ! IRGT ! IRGT # VGD R th (j-c) (dv/dt) c Gate non-trigger voltage Thermal resistance Critical-rate of rise of off-state commutating voltage Gate trigger current V 2 Gate trigger voltage V2 Parameter Repetitive peak off-state current On-state voltage ! @ # ! @ # Tj=125°C, VD=1/2VDRM Junction to case V4 Tj=25 °C, VD =6V, RL=6Ω, RG=330Ω Tj=25 °C, VD =6V, RL=6Ω, RG=330Ω Test conditions Tj=125°C, V DRM applied Tc=25 °C, ITM=12A, Instantaneous measurement Limits Min. — — — — — — — — 0.2 —
ALLOWABLE CASE TEMPERATURE VS. RMS ON-STATE CURRENT CURVES APPLY REGARDLESS OF CONDUCTION ANGLE
360° 40 CONDUCTION RESISTIVE, 20 INDUCTIVE LOADS 0 0 2 4 6
MAXIMUM RATINGS
Symbol VDRM VDSM Parameter Repetitive peak off-state voltage V1 Non-repetitive peak off-state voltage V1 Voltage class 8 400 500 12 600 720 Unit V V
PERFORMANCE CURVES
MAXIMUM ON-STATE CHARACTERISTICS 102 RATED SURGE ON-STATE CURRENT 100
SURGE ON-STATE CURRENT (A)
ON-STATE CURRENT (A)
7 5 3 2 7 5 3 2
90 80 70 60 50 40 30 20 10 0 100 2 3 4 5 7 101 2 3 4 5 7 102
GATE TRIGGER VOLTAGE (Tj = t°C) GATE TRIGGER VOLTAGE (Tj = 25°C)
MAXIMUM ON-STATE POWER DISSIPATION ON-STATE POWER DISSIPATION (W) 16 CASE TEMPERATURE (°C) 14 12 360° CONDUCTION 10 RESISTIVE, INDUCTIVE 8 LOADS 6 4 2 0 0 2 4 6 8 10 12 14 16 160 140 120 100 80 60
GATE TRIGGER CURRENT VS. JUNCTION TEMPERATURE TYPICAL EXAMPLEIRGT IIIIRGT I IFGT I
101 –60 –40 –20 0 20 40 60 80 100 120 140 JUNCTION TEMPERATURE (°C) MAXIMUM TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (JUNCTION TO CASE) 102 2 3 5 7 103 2.4 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 CONDUCTION TIME (CYCLES AT 60Hz)