A5A1500.14资料
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170 160 150 140 130
30º
120 110 100
60º 90º 120º 180º
120 110 0 200 400 600
60º 90º 120º 180º
DC
90 0 500 1000 1500 2000 2500
*Rectangular waveform
800
1000
1200
O O O O
C C C
A
O
IF(RMS) Nom. RMS current
A
t = 8.3 ms O Initial T J = 175 C, no voltage applied after surge. I2t for time t x = I2t1/2 * tx1/2. (0.1 < tx < 10ms). -
元器件交易网
AEGIS
SEMICONDUTORES LTDA.
A5A:1500.XX
TO-200AC
Fig. 7 - Outline Characteristics
1400
1600
*Sinusoidal waveform
Average Forward Current (A)
Averagቤተ መጻሕፍቲ ባይዱ Forward Current (A)
Fig. 1 - Current Ratings Characteristics
Fig. 2 - Current Ratings Characteristics
TEST CONDITIONS Initial T J = 25 C, 50-60Hz half sine, Ipeak = 4021A. TJ = 175 O C Av. power = V F(TO) * IF(AV) +rF * [IF(RMS)]2 Use low values for IFM < pIF(AV) TJ = 175 C. Max. rated VRRM
O
UNITS
O O
NOTES 180 half sine wave 50 Hz half cycle sine wave 60 Hz half cycle sine wave Initial T J = 175 C, rated VRRM applied after surge. Initial T J = 175 C, no voltage applied after surge. Initial T J = 175 C, rated VRRM applied after surge.
2500
0 0 500 1000 1500 2000 2500
*Rectangular waveform
Average Forward Current (A)
Average Forward Current (A)
Fig. 3 - On-State Power Loss Characteristics
25000
30º
Maximum Average Forward Power Loss
20000
30º
20000
15000
15000
60º
60º
10000
90º 120º
10000
90º 120º
5000
180º
5000
180º DC
0
*Sinusoidal waveform
0
500
1000
1500
2000
Fig. 4 - On-State Power Loss Characteristics
Forward Voltage Drop
10000
0.1
Transient Thermal Impedance ZthJC
Transient Thermal Impedance ZthJC (ºC/W)
Instantaneous Forward Current (A)
PARAMETER TJ Junction Temperature Tstg Storage Temperature IF(AV) Max. Av. current @ Max. TC VALUE -40 to 175 -40 to 175 1280 125 2370 15.8 IFSM Max. Peak non-rep. surge current 16.5 kA 18.7 19.6 1240 I2t Max. I2t capability 1130 1750 1600 I2t1/2 Max. I2t1/2 capability F Mounting Force 17500 1550 kA2s1/2 N.m kA2s 50 Hz half cycle sine wave 60 Hz half cycle sine wave t = 10ms t = 8.3 ms t = 10ms Initial T J = 175 C, no voltage applied after surge.
O
Max. VRSM , VR (V) Max. non-rep. peak reverse voltage TJ = 25 to 175OC 1500 1700 1900 2100 2300
TJ = -40 to 0OC 1400 1520 1710 1900 2090
MAXIMUM ALLOWABLE RATINGS
元器件交易网
AEGIS
SEMICONDUTORES LTDA.
A5A:1500.XX
CHARACTERISTICS
PARAMETER VFM Peak forward voltage VF(TO)1 Low-level threshold VF(TO)2 High-level threshold rF1 Low-level resistance rF2 High-level resistance IRM Peak reverse current RthJC Thermal resistance, junction-to-case RthCS Thermal resistance, case-to-sink wt Weight Case Style MIN. ----------------------TYP. 1.65 --------30 --------255(9) TO-200AC MAX. UNITS 1.87 0.79 0.807 0.262 0.241 60 0.035 0.039 0.040 0.030 --O
元器件交易网
AEGIS
SEMICONDUTORES LTDA.
A5A:1500.XX
Maximum Average Forward Power Loss Maximum Average Forward Power Loss (W) Maximum Average Forward Power Loss (W)
Maximum Allowable Case Temperature
Maximum Allowable Case Temperature (ºC)
170 160 150 140 130
30º
Maximum Allowable Case Temperature Maximum Allowable Case Temperature (ºC)
1000
0.01
125ºC
100 0.5
25ºC
1.0
1.5
2.0
2.5
3.0
1E-3 1E-3
0.01
0.1
1
10
Instantaneous Forward Voltage (V)
Time (s)
Fig. 5 - Forward Voltage Drop Characteristics
Fig. 6 - Transient Thermal Impedance Characteristics
O O
V V mW mA
O O
C/W DC operation, double side C/W 180O sine wave, double side
C/W 120O rectangular wave, duble side Mtg. Surface smooth, flat and greased. Single side. O C/W For double side, divide value by 2. g(oz.) -----
元器件交易网
AEGIS
SEMICONDUTORES LTDA.
A5A:1500.XX
VOLTAGE RATINGS
Part Number VRRM , VR (V) rep. peak reverse voltage TJ = 0 to 175 C A5A:1500.14 A5A:1500.16 A5A:1500.18 A5A:1500.20 A5A:1500.22 1400 1600 1800 2000 2200
30º
120 110 100
60º 90º 120º 180º
120 110 0 200 400 600
60º 90º 120º 180º
DC
90 0 500 1000 1500 2000 2500
*Rectangular waveform
800
1000
1200
O O O O
C C C
A
O
IF(RMS) Nom. RMS current
A
t = 8.3 ms O Initial T J = 175 C, no voltage applied after surge. I2t for time t x = I2t1/2 * tx1/2. (0.1 < tx < 10ms). -
元器件交易网
AEGIS
SEMICONDUTORES LTDA.
A5A:1500.XX
TO-200AC
Fig. 7 - Outline Characteristics
1400
1600
*Sinusoidal waveform
Average Forward Current (A)
Averagቤተ መጻሕፍቲ ባይዱ Forward Current (A)
Fig. 1 - Current Ratings Characteristics
Fig. 2 - Current Ratings Characteristics
TEST CONDITIONS Initial T J = 25 C, 50-60Hz half sine, Ipeak = 4021A. TJ = 175 O C Av. power = V F(TO) * IF(AV) +rF * [IF(RMS)]2 Use low values for IFM < pIF(AV) TJ = 175 C. Max. rated VRRM
O
UNITS
O O
NOTES 180 half sine wave 50 Hz half cycle sine wave 60 Hz half cycle sine wave Initial T J = 175 C, rated VRRM applied after surge. Initial T J = 175 C, no voltage applied after surge. Initial T J = 175 C, rated VRRM applied after surge.
2500
0 0 500 1000 1500 2000 2500
*Rectangular waveform
Average Forward Current (A)
Average Forward Current (A)
Fig. 3 - On-State Power Loss Characteristics
25000
30º
Maximum Average Forward Power Loss
20000
30º
20000
15000
15000
60º
60º
10000
90º 120º
10000
90º 120º
5000
180º
5000
180º DC
0
*Sinusoidal waveform
0
500
1000
1500
2000
Fig. 4 - On-State Power Loss Characteristics
Forward Voltage Drop
10000
0.1
Transient Thermal Impedance ZthJC
Transient Thermal Impedance ZthJC (ºC/W)
Instantaneous Forward Current (A)
PARAMETER TJ Junction Temperature Tstg Storage Temperature IF(AV) Max. Av. current @ Max. TC VALUE -40 to 175 -40 to 175 1280 125 2370 15.8 IFSM Max. Peak non-rep. surge current 16.5 kA 18.7 19.6 1240 I2t Max. I2t capability 1130 1750 1600 I2t1/2 Max. I2t1/2 capability F Mounting Force 17500 1550 kA2s1/2 N.m kA2s 50 Hz half cycle sine wave 60 Hz half cycle sine wave t = 10ms t = 8.3 ms t = 10ms Initial T J = 175 C, no voltage applied after surge.
O
Max. VRSM , VR (V) Max. non-rep. peak reverse voltage TJ = 25 to 175OC 1500 1700 1900 2100 2300
TJ = -40 to 0OC 1400 1520 1710 1900 2090
MAXIMUM ALLOWABLE RATINGS
元器件交易网
AEGIS
SEMICONDUTORES LTDA.
A5A:1500.XX
CHARACTERISTICS
PARAMETER VFM Peak forward voltage VF(TO)1 Low-level threshold VF(TO)2 High-level threshold rF1 Low-level resistance rF2 High-level resistance IRM Peak reverse current RthJC Thermal resistance, junction-to-case RthCS Thermal resistance, case-to-sink wt Weight Case Style MIN. ----------------------TYP. 1.65 --------30 --------255(9) TO-200AC MAX. UNITS 1.87 0.79 0.807 0.262 0.241 60 0.035 0.039 0.040 0.030 --O
元器件交易网
AEGIS
SEMICONDUTORES LTDA.
A5A:1500.XX
Maximum Average Forward Power Loss Maximum Average Forward Power Loss (W) Maximum Average Forward Power Loss (W)
Maximum Allowable Case Temperature
Maximum Allowable Case Temperature (ºC)
170 160 150 140 130
30º
Maximum Allowable Case Temperature Maximum Allowable Case Temperature (ºC)
1000
0.01
125ºC
100 0.5
25ºC
1.0
1.5
2.0
2.5
3.0
1E-3 1E-3
0.01
0.1
1
10
Instantaneous Forward Voltage (V)
Time (s)
Fig. 5 - Forward Voltage Drop Characteristics
Fig. 6 - Transient Thermal Impedance Characteristics
O O
V V mW mA
O O
C/W DC operation, double side C/W 180O sine wave, double side
C/W 120O rectangular wave, duble side Mtg. Surface smooth, flat and greased. Single side. O C/W For double side, divide value by 2. g(oz.) -----
元器件交易网
AEGIS
SEMICONDUTORES LTDA.
A5A:1500.XX
VOLTAGE RATINGS
Part Number VRRM , VR (V) rep. peak reverse voltage TJ = 0 to 175 C A5A:1500.14 A5A:1500.16 A5A:1500.18 A5A:1500.20 A5A:1500.22 1400 1600 1800 2000 2200