CAPACITOR AND METHOD OF ITS MANUFACTURE
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专利名称：CAPACITOR AND METHOD OF ITS MANUFACTURE
发明人：NAKAMURA, Takashi
申请号：JP2000000597
申请日：20000203
公开号：WO00/046856P1
公开日：
20000810
专利内容由知识产权出版社提供
摘要：A lower electrode (4), a dielectric layer (5) made of a ferroelectric material or a high dielectric constant material, and an upper electrode (6) are formed in order on an insulating film (2). The dielectric layer (5) overlaps the lower electrode (4). Between the overlapping portion of the dielectric layer (5) and the insulating film (2), an insulation barrier layer (3) made of two or more complex metal oxides containing Si or silicon nitride compounds is interposed. In another mode, a plug for contact is provided in an insulating film, and an adherence layer is provided between the plug and the lower electrode. An insulation barrier layer made of an oxide which is the same material forming the adherence layer is provided between the dielectric layer and the insulating film. As a result, Ti and Pb, which are constituent elements of the ferroelectric material or high dielectric constant material do not diffuse into and enter an SiO2 film and a semiconductor layer, enabling easy formation of a barrier layer.
申请人：NAKAMURA, Takashi
地址：JP,JP
国籍：JP,JP
代理机构：KAWAMURA, Kiyoshi 更多信息请下载全文后查看。