pc817(光耦隔离)

DC Characteristic Device
Test Conditions
Symbol Min
Current Transfer Ratio
FOD814 FOD814A
IF = ±1 mA, VCE = 5 V1
CTR
20
50
FOD617A
IF = 10 mA, VCE = 5 V1
40
FOD617B
Functional Block Diagram
ANODE, CATHODE 1
4 COLLECTOR
ANODE 1
4 COLLECTOR
CATHODE, ANODE 2
3 EMITTER
CATHODE 2
3 EMITTER
4
FOD814
FOD617/817
1
©2005 Fairchild Semiconductor Corporation
FOD814 Series, FOD617 Series, FOD817 Series 4-Pin Phototransistor Optocouplers
■ Minimum BVCEO of 70V guaranteed
Applications
FOD814 Series ■ AC line monitor ■ Unknown polarity DC sensor ■ Telephone line interface
FOD617 and FOD817 Series ■ Power supply regulators ■ Digital logic inputs ■ Microprocessor inputs
±50
50
VR
—
6
PD
70
1.7
DETECTOR
Collector-Emitter Voltage Emitter-Collector Voltage
VCEO VECO
70
6
6 (FOD817)
7 (FOD617)
Continuous Collector Current
Collector Power Dissipation Derate above 90°C
EMITTER
Forward Voltage Reverse Leakage Current Terminal Capacitance
FOD814
(IF = ±20 mA)
VF
FOD617
(IF = 60 mA)
FOD817
(IF = 20 mA)
FOD617
(VR = 6.0 V)
IR
FOD817
FOD814 Series, FOD617 Series, FOD817 Series 4-Pin Phototransistor Optocouplers
November 2005
FOD814 Series, FOD617 Series, FOD817 Series 4-Pin Phototransistor Optocouplers
FOD817
Isolation Capacitance
FOD814
FOD617
FOD817
Test Conditions Symbol f = 60Hz, t = 1 min VISO
Min 5000
VI-O = 500 VDC
RISO
5x1010
VI-O = 0, f = 1 MHz
CISO
Typ* 1x1011
(VR = 4.0 V)
FOD814 (V = 0, f = 1 kHz)
Ct
FOD617 (V = 0, f = 1 kHz)
FOD817 (V = 0, f = 1 kHz)
—
1.2
1.4
V
— 1.35 1.65
—
1.2
1.4
— 0.001 10
µA
—
—
10
—
50
250 pF
—
30
250
—
30
250
IC
50
PC
150
2.9
Units
°C °C °C mW
mA
mW mW/°C
V V
mA mW mW/°C
2 FOD814 Series, FOD617 Series, FOD817 Series Rev. 1.0.2
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FOD814 Series, FOD617 Series, FOD817 Series 4-Pin Phototransistor Optocouplers
—
—
100 nA
—
1
100
—
1
50
—
—
100
Collector-Emitter Breakdown Voltage
Emitter-Collector Breakdown Voltage
FOD814 (IC = 0.1 mA, IF = 0) BVCEO
70
—
—
V
FOD617 (IC = 100 µA, IF = 0)
63
FOD617C
100
FOD617D
160
FOD617A
IF = 1 mA, VCE = 5 V1
13
FOD617B
22
FOD617C
34
FOD617D
56
FOD817
IF = 5 mA, VCE = 5 V1
50
FOD817A
80
FOD817B
130
FOD817C
200
FOD817D
300
Collector-Emitter FOD814 Saturation Voltage FOD617
1
FOD814 Series, FOD617 Series, FOD817 Series Rev. 1.0.2
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FOD814 Series, FOD617 Series, FOD817 Series 4-Pin Phototransistor Optocouplers
0.6
*Typical values at TA = 25°C
Notes 1. Current Transfer Ratio (CTR) = IC/IF x 100%. 2. For test circuit setup and waveforms, refer to page 4. 3. For this test, Pins 1 and 2 are common, and Pins 3 and 4 are common.
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FOD814 Series, FOD617 Series, FOD817 Series 4-Pin Phototransistor Optocouplers
Transfer Characteristics (continued) (TA = 25°C Unless otherwise specified.)
TSTG TOPR TSOL P TOT
-55 to +150
-55 twenku.baidu.com +105
-55 to +110
260 for 10 sec
200
Continuous Forward Current Reverse Voltage Power Dissipation
Derate above 100°C
IF
Max Units Vac(rms)
—
Ω
1.0
pf
4 FOD814 Series, FOD617 Series, FOD817 Series Rev. 1.0.2
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COLLECTOR POWER DISSIPATION PC (mW)
COLLECTOR POWER DISSIPATION PC (mW)
Description
The FOD814 consists of two gallium arsenide infrared emitting diodes, connected in inverse parallel, driving a silicon phototransistor output in a 4-pin dual in-line package. The FOD617/817 Series consists of a gallium arsenide infrared emitting diode driving a silicon phototransistor in a 4-pin dual in-line package.
FOD617A: 40–80%
FOD817: 50–600%
FOD617B: 63–125%
FOD817A:80–160%
FOD617C: 100–200% FOD817B: 130–260%
FOD617D: 160–320% FOD817C:200–400%
FOD814: 20–300%
FOD817D:300–600%
AC Characteristic Response Time (Rise)
Device
FOD814 FOD617 FOD817
Test Conditions
Symbol Min
VCE = 2 V, IC = 2 mA, RL = 100 Ω2
tr
—
Response Time (Fall)
FOD814 FOD617 FOD817
70
—
—
FOD817 (IC = 0.1 mA, IF = 0)
70
—
—
FOD814 (IE = 10 µA, IF = 0) BVECO
6
—
—
V
FOD617 (IE = 10 µA, IF = 0)
7
—
—
FOD817 (IE = 10 µA, IF = 0)
6
—
—
Transfer Characteristics (TA = 25°C Unless otherwise specified.)
tf
—
Typ* Max Unit
4
18 µs
3
18 µs
Isolation Characteristics
Characteristic
Device
Input-Output Isolation Voltage3
FOD814 FOD617
FOD817
Isolation Resistance
FOD814
FOD617
Electrical/Characteristics (TA = 25°C Unless otherwise specified.)
Individual Component Characteristics
Parameter
Device Test Conditions Symbol Min Typ* Max Unit
DETECTOR
Collector Dark Current
FOD814 FOD617C/
D FOD617A/
B FOD817
(VCE = 20 V, IF = 0) (VCE = 10 V, IF = 0) (VCE = 10 V, IF = 0) (VCE = 20 V, IF = 0)
ICEO
15
*Typical values at TA = 25°C
Typ* —
Max Unit 300 % 150 80 125 200 320
— 600 — 160 — 260 — 400 — 600 0.1 0.2 V — 0.4 0.1 0.2 80 — KHz
3 FOD814 Series, FOD617 Series, FOD817 Series Rev. 1.0.2
Absolute Maximum Ratings (TA = 25°C Unless otherwise specified.)
Value
Parameter
Symbol
FOD814 FOD617/817
TOTAL DEVICE
Storage Temperature Operating Temperature Lead Solder Temperature Total Power Dissipation EMITTER
IF = ±20 mA, IC = 1 mA IF = 10 mA, IC = 2.5 mA
VCE (sat) — —
FOD817
IF = 20 mA, IC = 1 mA
—
Cut-Off Frequency FOD814 VCE = 5 V, IC = 2 mA, RL = 100 Ω, -3dB fC
Features
■ AC input response (FOD814 only)
■ Applicable to Pb-free IR reflow soldering
■ Compact 4-pin package
■ Current transfer ratio in selected groups:
FOD814A: 50–150%
■ C-UL, UL and VDE approved
■ High input-output isolation voltage of 5000Vrms
■ Higher operating temperatures (versus FODXXX counterparts)