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3
2014-11-06
History of Semiconductors(Devices and IC)
• 1878: Alexander Graham(格雷厄姆) Bell used this device for a wireless communication system
•
In 1895, the Italian Gugielmo Marconi(马可尼) first showed a new technology invented by Nikola Tesla(泰斯拉) through radio signals. This was the beginning of wireless communication. Crystal detectors were used in radio receivers. It is able to separate the carrier wave from the part of the signal carrying the information.
•
• •
W. Shockley, “The theory of p-n junction in semiconductor and p-n junction transistor” Bell Syst. Tech. J. 28, 435(1949)
1952 Shockley(肖克利) proposed JFET
4
2014-11-06
History of Semiconductors(Devices and IC)
• In 1904, John Ambrose Fleming, an English physicist, devised the first practical electron tube known as the "Fleming Valve”.
•
1963: Gunn( 耿 ) discovered microwave oscillations in GaAs and InP (Ridley-Watkins-Hilsum-Gunn effect).
J.B. Gunn, “microwave oscillation of current in III-V semiconductor”, Solid-State Commun. 1, 88(1963)
In 1906, Lee de Forest(德福雷斯特), an American scientist, added a third electrode (called a grid) to the electron tube, which is now called a triode. This is a network of small wires around the vacuum tube cathode . Thus, the amplifying vacuum tube, the most recent ancestor of the transistor, was born.
1938 Schottky(肖特基) proposed M-S barrier theory(model).
Schottky提出，金属-半导体接触中的势垒起源于半导体中稳定的空间电 荷，而非由于化学层的存在。这个模型现在被称为肖特基势垒。
W. Schottky, “Halbleitertheorie der sperrschicht”, Naturwissenschaften 26, 843(1938)
“Theory of wide gap emitter for transistor”, proc. IRE 45, 1535(1957)
•
1 9 5 8 : Leo Esaki discovered a tunnel diode (Esaki diode).
“New phenomenon in narrow germanium p-n junction”, Phys. Rev.109,603(1958)
D.Kahng and S.M.Sze, “A floating gate and its application to memory devices”, Bell Syst. Tech. J. 46, 1283(1967)
•
1970 Boyle(波义耳) and Smith invented CCD
the resistivity of AgO increase with increase of T
•
2014-11-06
2
History of Semiconductors(Devices and IC)
• 1873: W. Smith（英国） discovered light sensitivity of semiconductors 晶体硒在光照射下电阻变小的光电导效应 In 1874, Ferdinand Braun(布劳恩), a German scientist, discovered that crystals(金属-半导体接触，M-S) could conduct current in one direction under certain conditions. This phenomenon is called rectification（整流）.
•
1963: Wanlass and Sah(萨) introduced CMOS technology.
“nanowatt logic using field-effect metal-oxide-semiconductor triode”,SSC conf.
8
2014-11-06
History of Semiconductors(Devices and IC)
W. Shockley, “A unipolar FET”, proc. IRE 40, 1361(1952)
1952 Ebers proposed thyristor
J.J. Ebers, “four terminal of p-n-p-n transistors”, proc. IRE 40, 1361(1952)
F. Brause, “Uber die stromleitung durch schwefelmetalle”, Ann. Phy. Chem. 153, 556(1874)
•
•
1875: Werner von Siemens(西门 子 ) invented a selenium( 硒 ) photometer
•
• •
1907 Round demonstrated the first LED (using SiC)
在一块金刚砂晶体上的两点间加上电压时，观察到晶体发出了黄光
H.J. Round, “A note on carborundum”, Electr. Wld 19(february 9), 309(1907)
course overview
第一章 集成电路设计与集成电路设计方法概述 本章主要内容
1.1 集成电路的概念、发明和发展规律
1.2 集成电路设计、制造概述，设计特点，设计层次和 设计领域（集成电路的分层分级设计思想） 1.3 集成电路的设计过程（流程）
1.4 CAD在集成电路设计中的作用
2014-11-06
• •
1966 Mead invented MESFET.
C.A.Mead, “Schottky barrier gate FET”,Байду номын сангаасproc.IEEE 54,307(1966)
1 9 6 7 Kahng and Sze（ 施 敏 ） invented non-volatile memory(非挥发性存储器)
1954: Chapin, Fuller, and Pearson developed a solar cell.
D.M.Chapin, C.S.Fuller and G.L.Pearson, ”A new silicon p-n junction photocell for converting solar radiation into electrical power”, JAP,25, 676(1954)
2014-11-06
5
History of Semiconductors(Devices and IC)
• 1947: Bardeen, Brattain, and Shockley discovered a Bipolar Junction transistor and MODERN AGE BEGAN • 1949 Shockley(肖克利) proposed pn junction and BJT theory
2014-11-06
6
History of Semiconductors(Devices and IC)
• 1 9 5 7 : Kroemer proposed hetero-junction bipolar transistor (HBT) can improve emitter efficiency of BJT.
DRC,”Silicon dioxide field surface devices”,IEEE Pittsburgh(匹兹堡)
1962: three groups headed by Hall, Nathan, and Quist demonstrated a semiconductor laser.
•
1958: John Kilby（基尔比）, invented the Integrated Circuit (IC).
2014-11-06
7
History of Semiconductors(Devices and IC)
• • 1960: Kahn and Atalla demonstrated the first MOSFET
1
1.1 History of Semiconductors(Devices and IC)
• 1 8 2 1 : Thomas Seebeck discovered semiconductor properties of PbS 1833: Michael(迈克尔) Faraday(法拉第,英国) reported on conductivity temperature dependence for a new class of materials --semiconductors
R.H.Hall et al, “Coherent light emission from GaAs junction”,Phys. Rev. Lett., 9,366(1962) M.I.Nathan et al,”Stimulated emission of radiation from GaAs p-n junction”, APL 1,62(1962) T.M.Quist et al, “Semiconductor maser of GaAs”, APL 1, 91(1962)
• 1 9 6 5 , Johnston( 约 翰 斯 顿 ), Deloach and Cohen( 科 恩 ) invented IMPATT(Impact Avalanche and Transit Time Diode 碰撞雪崩及渡越时间二极管).
R.L.Johnston, B.C.Deloach,Jr., and B.G. Cohen, “A silicon diode microwave oscillator”, Bell Syst. Tech. J.44, 369(1965)
W.S.Boyle and G.E.Smith, “Charge coupled semiconductor devices”, Bell Syst. Tech., J. 49, 587(1970)
2014-11-06
9
History of Semiconductors(Devices and IC)
2014-11-06
History of Semiconductors(Devices and IC)
• 1878: Alexander Graham(格雷厄姆) Bell used this device for a wireless communication system
•
In 1895, the Italian Gugielmo Marconi(马可尼) first showed a new technology invented by Nikola Tesla(泰斯拉) through radio signals. This was the beginning of wireless communication. Crystal detectors were used in radio receivers. It is able to separate the carrier wave from the part of the signal carrying the information.
•
• •
W. Shockley, “The theory of p-n junction in semiconductor and p-n junction transistor” Bell Syst. Tech. J. 28, 435(1949)
1952 Shockley(肖克利) proposed JFET
4
2014-11-06
History of Semiconductors(Devices and IC)
• In 1904, John Ambrose Fleming, an English physicist, devised the first practical electron tube known as the "Fleming Valve”.
•
1963: Gunn( 耿 ) discovered microwave oscillations in GaAs and InP (Ridley-Watkins-Hilsum-Gunn effect).
J.B. Gunn, “microwave oscillation of current in III-V semiconductor”, Solid-State Commun. 1, 88(1963)
In 1906, Lee de Forest(德福雷斯特), an American scientist, added a third electrode (called a grid) to the electron tube, which is now called a triode. This is a network of small wires around the vacuum tube cathode . Thus, the amplifying vacuum tube, the most recent ancestor of the transistor, was born.
1938 Schottky(肖特基) proposed M-S barrier theory(model).
Schottky提出，金属-半导体接触中的势垒起源于半导体中稳定的空间电 荷，而非由于化学层的存在。这个模型现在被称为肖特基势垒。
W. Schottky, “Halbleitertheorie der sperrschicht”, Naturwissenschaften 26, 843(1938)
“Theory of wide gap emitter for transistor”, proc. IRE 45, 1535(1957)
•
1 9 5 8 : Leo Esaki discovered a tunnel diode (Esaki diode).
“New phenomenon in narrow germanium p-n junction”, Phys. Rev.109,603(1958)
D.Kahng and S.M.Sze, “A floating gate and its application to memory devices”, Bell Syst. Tech. J. 46, 1283(1967)
•
1970 Boyle(波义耳) and Smith invented CCD
the resistivity of AgO increase with increase of T
•
2014-11-06
2
History of Semiconductors(Devices and IC)
• 1873: W. Smith（英国） discovered light sensitivity of semiconductors 晶体硒在光照射下电阻变小的光电导效应 In 1874, Ferdinand Braun(布劳恩), a German scientist, discovered that crystals(金属-半导体接触，M-S) could conduct current in one direction under certain conditions. This phenomenon is called rectification（整流）.
•
1963: Wanlass and Sah(萨) introduced CMOS technology.
“nanowatt logic using field-effect metal-oxide-semiconductor triode”,SSC conf.
8
2014-11-06
History of Semiconductors(Devices and IC)
W. Shockley, “A unipolar FET”, proc. IRE 40, 1361(1952)
1952 Ebers proposed thyristor
J.J. Ebers, “four terminal of p-n-p-n transistors”, proc. IRE 40, 1361(1952)
F. Brause, “Uber die stromleitung durch schwefelmetalle”, Ann. Phy. Chem. 153, 556(1874)
•
•
1875: Werner von Siemens(西门 子 ) invented a selenium( 硒 ) photometer
•
• •
1907 Round demonstrated the first LED (using SiC)
在一块金刚砂晶体上的两点间加上电压时，观察到晶体发出了黄光
H.J. Round, “A note on carborundum”, Electr. Wld 19(february 9), 309(1907)
course overview
第一章 集成电路设计与集成电路设计方法概述 本章主要内容
1.1 集成电路的概念、发明和发展规律
1.2 集成电路设计、制造概述，设计特点，设计层次和 设计领域（集成电路的分层分级设计思想） 1.3 集成电路的设计过程（流程）
1.4 CAD在集成电路设计中的作用
2014-11-06
• •
1966 Mead invented MESFET.
C.A.Mead, “Schottky barrier gate FET”,Байду номын сангаасproc.IEEE 54,307(1966)
1 9 6 7 Kahng and Sze（ 施 敏 ） invented non-volatile memory(非挥发性存储器)
1954: Chapin, Fuller, and Pearson developed a solar cell.
D.M.Chapin, C.S.Fuller and G.L.Pearson, ”A new silicon p-n junction photocell for converting solar radiation into electrical power”, JAP,25, 676(1954)
2014-11-06
5
History of Semiconductors(Devices and IC)
• 1947: Bardeen, Brattain, and Shockley discovered a Bipolar Junction transistor and MODERN AGE BEGAN • 1949 Shockley(肖克利) proposed pn junction and BJT theory
2014-11-06
6
History of Semiconductors(Devices and IC)
• 1 9 5 7 : Kroemer proposed hetero-junction bipolar transistor (HBT) can improve emitter efficiency of BJT.
DRC,”Silicon dioxide field surface devices”,IEEE Pittsburgh(匹兹堡)
1962: three groups headed by Hall, Nathan, and Quist demonstrated a semiconductor laser.
•
1958: John Kilby（基尔比）, invented the Integrated Circuit (IC).
2014-11-06
7
History of Semiconductors(Devices and IC)
• • 1960: Kahn and Atalla demonstrated the first MOSFET
1
1.1 History of Semiconductors(Devices and IC)
• 1 8 2 1 : Thomas Seebeck discovered semiconductor properties of PbS 1833: Michael(迈克尔) Faraday(法拉第,英国) reported on conductivity temperature dependence for a new class of materials --semiconductors
R.H.Hall et al, “Coherent light emission from GaAs junction”,Phys. Rev. Lett., 9,366(1962) M.I.Nathan et al,”Stimulated emission of radiation from GaAs p-n junction”, APL 1,62(1962) T.M.Quist et al, “Semiconductor maser of GaAs”, APL 1, 91(1962)
• 1 9 6 5 , Johnston( 约 翰 斯 顿 ), Deloach and Cohen( 科 恩 ) invented IMPATT(Impact Avalanche and Transit Time Diode 碰撞雪崩及渡越时间二极管).
R.L.Johnston, B.C.Deloach,Jr., and B.G. Cohen, “A silicon diode microwave oscillator”, Bell Syst. Tech. J.44, 369(1965)
W.S.Boyle and G.E.Smith, “Charge coupled semiconductor devices”, Bell Syst. Tech., J. 49, 587(1970)
2014-11-06
9
History of Semiconductors(Devices and IC)