EO贴片三极管代码

QA Label
Label on the Inner Box Inner Box: 210 mm× 208 mm×203 mm
Label on the Outer Box Outer Box: 440 mm× 440 mm× 230 mm
COLLECTOR CURRENT I (mA) C
10 1
800 300 100
30 10
3 1 0.2
400
β=25
3
10
30
100
300
800
COLLECTOR CURRENT I (mA) C
I —— V
C
BE
T =100℃ a
T =25℃ a
COMMON EMITTER V =1V
CE
0.4
0°
8°
The bottom gasket
3000×15 PCS
Label on the Reel 3000×1 PCS
Seal the box with the tape
The top gasket
Stamp “EMPTY” on the empty box
Seal the box with the tape
10
20
200
150
100
50
0
0
25
50
75
100
125
150
AMBIENT TEMPERATURE T (℃) A,May,2011 a
TRANSITION FREQUENCY f (MHz) T
【 南京南山半导体有限公司 — 长电三极管选型资料】
www.nscn.com.cn
Symbol
A A1 A2 b c D E E1 e e1 L L1 θ
Cob
VCB=10V,IE=0,f=1MHZ
O 100-200
EO
Min Typ 35 30 5
100
0.5 120 13
Y 160-320
EY
Max
0.1 0.1 320 0.5 0.8
Unit V V V
μA μA
V V
MHz
pF
A,May,2011
Typical Characterisitics
200
100
0 1
1.2
COMMON EMITTER V =1V
CE
3
10
30
100
300
800
COLLECTOR CURRENT I (mA) C
V
—— I
BEsat
C
0.8
T =25℃
a
T =100℃ a
0.4
BASE-EMITTER SATURATION
(mV)
CEsat
VOLTAGE V
COLLECTOR-EMITTER SATURATION
I =50uA
B
0.5
1.0
1.5
2.0
2.5
COLLECTOR-EMITTER VOLTAGE V (V) CE
V
Βιβλιοθήκη Baidu
—— I
CEsat
C
T =100℃ a T =25℃ a
DC CURRENT GAIN h FE
VOLTAGE V
(V)
BEsat
h —— I
400
FE
C
T =100℃ a
300
T =25℃ a
Transition frequency
Collector output capacitance
CLASSIFICATION OF hFE Rank Range Marking
Symbol
Test conditions
V(BR)CBO V(BR)CEO V(BR)EBO
IC= 100μA, IE=0
KTC3265
COLLECTOR CURRENT I (mA) C
160 120
80 40
0 0.0 600 300 100
30
Static Characteristic
500uA 450uA
COMMON
EMITTER T =25℃
a
400uA 350uA 300uA 250uA
200uA 150uA 100uA
Value 35 30 5 800 200 150
-55-150
Unit V V V mA
mW ℃ ℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Collector cut-off current DC current gain Collector-emitter saturation voltage base-emitter voltage
IC= 10mA, IB=0
IE=100μA, IC=0
ICBO
VCB=30 V, IE=0
IEBO
VEB=5 V, IC=0
hFE
VCE=1V, IC= 100mA
VCE(sat)
IC=500mA, IB=20mA
VBE
VCE=1V,IC=10mA
VCE=5V, IC=10mA
fT
f=100MHz
0.0 1
100
30
β=25
3
10
30
100
300
800
COLLECTOR CURRENT I (mA) C
C / C —— V / V
ob ib
CB EB
C ib
10
C ob
3
1 0.1
250
0.3
1
3
REVERSE VOLTAGE V (V)
P —— T
C
a
f=1MHz
I =0/I =0
E
C
T =25℃ a
0.6
0.8
1.0
1.2
BASE-EMMITER VOLTAGE V (V) BE
f —— I
T
C
V =5V CE
T =25℃ a
200
100
5
10
30
100
COLLECTOR CURRENT I (mA) C
COLLECTOR POWER DISSIPATION P (mW)
C
CAPACITANCE C (pF)
FEATURES z High DC current gain z Complementary to KTA1298
SOT-23
1. BASE 2. EMITTER 3. COLLECTOR
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol VCBO VCEO VEBO IC PC Tj Tstg
【 南京南山半导体有限公司 — 长电贴片三极管选型资料】
www.nscn.com.cn
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23 Plastic-Encapsulate Transistors
KTC3265 TRANSISTOR (NPN)
0°
8°
Dimensions In Inches
Min.
Max.
0.035
0.045
0.000
0.004
0.035
0.041
0.012
0.020
0.003
0.006
0.110
0.118
0.047
0.055
0.089
0.100
0.037 TYP.
0.071
0.079
0.022 REF.
0.012
0.020
Dimensions In Millimeters
Min.
Max.
0.900
1.150
0.000
0.100
0.900
1.050
0.300
0.500
0.080
0.150
2.800
3.000
1.200
1.400
2.250
2.550
0.950 TYP.
1.800
2.000
0.550 REF.
0.300
0.500
Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation Junction Temperature Storage Temperature