15ETH06FP中文资料

1
0.5
1
1.5
2
2.5
3
Forward Voltage Drop - VFM (V)
Fig. 1 - Typical Forward Voltage Drop Characteristics
10
10 0 100 200 300 400 500 600 Reverse Voltage - VR (V)
Max
175 175 1.3 70
12 10
Units
°C
°C/W
g (oz) Kg-cm lbf.in

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Instantaneous Forward Current - I F (A)
15ETH06, 15ETH06S, 15ETH06-1
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameters
Min Typ Max Units Test Conditions
VBR, Vr VF
Breakdown Voltage, Blocking Voltage
PDM
t1 t2
Notes: 1. Duty factor D = t1/ t2 2. Peak Tj = Pdm x ZthJC + Tc
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
t1, Rectangular Pulse Duration (Seconds)
Fig. 4 - Max. Thermal Impedance Z thJC Characteristics
D IRFP250
S
Fig. 9- Reverse Recovery Parameter Test Circuit
- 28 35
IF = 15A, diF/dt = 100A/µs, VR = 30V
- 29 -
TJ = 25°C
- 75 -
- 3.5 -
-
7-
TJ = 125°C A TJ = 25°C
TJ = 125°C
IF = 15A diF /dt = 200A/µs
VR = 390V
- 57 - nC TJ = 25°C
Absolute Maximum Ratings
Parameters
VRRM IF(AV) IFSM IFM TJ, TSTG
Peak Repetitive Peak Reverse Voltage
Average Rectified Forward Current Non Repetitive Peak Surge Current Peak Repetitive Forward Current
4

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15ETH06, 15ETH06S, 15ETH06-1
Bulletin PD-20749 rev. D 08/01
Reverse Recovery Circuit
VR = 200V
L = 70µH
0.01 Ω D.U.T.
ddiiFf/d/dtt ADJUST G
Average Power Loss ( Watt25
20
D = 0.01
15
D = 0.02
D = 0.05
10
D = 0.1
D = 0.2
5
D = 0.5
DC
0
0
5 10 15 20 25
Average Forward Current - IF(AV) (A)
Fig. 6 - Forward Power Loss Characteristics
1000
V R = 390V T J = 125˚C T J = 25˚C
800
IF = 30 A IF = 15 A
600
400
200
0
100
1000
di F /dt (A/µs )
Fig. 8 - Typical Stored Charge vs. di F /dt
(3) Formula used: TC = TJ - (Pd + PdREV) x RthJC; Pd = Forward Power Loss = IF(AV) x VFM @ (IF(AV) / D) (see Fig. 6); PdREV = Inverse Power Loss = VR1 x IR (1 - D); IR @ VR1 = rated VR
Parameters
Max. Junction Temperature Range
Max. Storage Temperature Range
Thermal Resistance, Junction to Case
Per Leg
Thermal Resistance, Junction to Ambient Per Leg
Dynamic Recovery Characteristics @ TC = 25°C (unless otherwise specified)
Parameters
Min Typ Max Units Test Conditions
trr
Reverse Recovery Time
IRRM
Peak Recovery Current
130 80% Rated Vr applied
120 see note (3)
110
0
5 10 15 20 25
Average Forward Current - IF(AV)(A)
Fig. 5 - Max. Allowable Case Temperature
Vs. Average Forward Current
10
T = 150˚C J
Reverse Voltage - VR (V) Fig. 2 - Typical Values Of Reverse Current
T = 25˚C
Vs. Reverse Voltage
J
1000
T J= 25˚C
100
Junction Capacitance - C T (pF)
Thermal Resistance, Case to Heatsink
Weight
Mounting Torque
! Typical Socket Mount "#Mounting Surface, Flat, Smooth and Greased
2
Min
- 65
6.0 5.0
Typ
1.0 0.5 2.0 0.07 -
- 300 - 51 - 20 - 580 -
TJ = 125°C ns
A TJ = 125°C nC
IF = 15A diF /dt = 800A/µs
VR = 390V
Thermal - Mechanical Characteristics
TJ TStg RthJC RthJA ! RthCS "
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Bulletin PD-20749 rev. D 08/01
Hyperfast Rectifier
15ETH06 15ETH06S 15ETH06-1
Features
• Hyperfastfast Recovery Time • Low Forward Voltage Drop • Low Leakage Current • 175°C Operating Junction Temperature • Single Die Center Tap Module

3
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15ETH06, 15ETH06S, 15ETH06-1
Bulletin PD-20749 rev. D 08/01
Allowable Case Temperature (°C)
180
170
160 DC
150
140
Square wave (D = 0.50)
Qrr
trr IRRM Qrr
Reverse Recovery Charge
Reverse Recovery Time Peak Recovery Current Reverse Recovery Charge
- 22 30 ns IF = 1A, diF/dt = 100A/µs, VR = 30V
1 Cathode
3 Anode
TO-220AC

Base Cathode
2
1 N/C
3 Anode
D2PAK
2
1 N/C
3 Anode
TO-262
1
元器件交易网
15ETH06, 15ETH06S, 15ETH06-1
Bulletin PD-20749 rev. D 08/01
trr ( ns )
100
IF = 30 A IF = 15 A
80
60
40
20
V R = 390V T J = 125˚C T J = 25˚C
0
100
1000
di F /dt (A/µs )
Fig. 7 - Typical Reverse Recovery vs. di F /dt
Qrr ( nC )
Forward Voltage
IR
Reverse Leakage Current
CT
Junction Capacitance
LS
Series Inductance
600 - -
V IR = 100µA
- 1.8 2.2 V IF = 15A, TJ = 25°C - 1.3 1.6 V IF = 15A, TJ = 150°C - 0.2 50 µA VR = VR Rated - 30 500 µA TJ = 150°C, VR = VR Rated - 20 - pF VR = 600V - 8.0 - nH Measured lead to lead 5mm from package body
@ TC = 140°C @ TJ = 25°C
Operating Junction and Storage Temperatures
Max
600 15 120 30 - 65 to 175
Units
V A
°C
15ETH06
Case Styles 15ETH06S
15ETH06-1
Base Cathode
Fig. 3 - Typical Junction Capacitance Vs. Reverse Voltage
Thermal Impedance Z thJC (°C/W)
1 D = 0.50 D = 0.20 D = 0.10 D = 0.05 D = 0.02
0.1 D = 0.01
Single Pulse (Thermal Resistance)
trr = 22ns typ. IF(AV) = 15Amp
VR = 600V
Description/ Applications
State of the art Hyperfast recovery rectifiers designed with optimized performance of forward voltage drop, Hyperfast recover time, and soft recovery. The planar structure and the platinum doped life time control guarantee the best overall performance, ruggedness and reliability characteristics. These devices are intended for use in PFC Boost stage in the AC-DC section of SMPS, inverters or as freewheeling diodes. The IR extremely optimized stored charge and low recovery current minimize the switching losses and reduce over dissipation in the switching element and snubbers.
Bulletin PD-20749 rev. D 08/01
Reverse Current - I R (µA)
100
1000
T J = 175˚C 100
150˚C
10
125˚C
1
100˚C
0.1
25˚C 0.01
0.001
T J = 175˚C
0 0 100 200 300 400 500 600