AO3451

110
90
125°C
70
50
25°C
30
0
2
4
6
8
10
-VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
IS (A)
1.0E+01
1.0E+00
40
1.0E-01
1.0E-02 1.0E-03
125°C
1.0E-04
VDS=-30V, VGS=0V
TJ=55°C
IGSS
Gate-Body leakage current
VDS=0V, VGS= ±12V
VGS(th) Gate Threshold Voltage
VDS=VGS ID=-250µA
-0.5
ID(ON)
On state drain current
VGS=-10V, VDS=-5V
General Description
• Low RDS(ON) • RoHS and Halogen-Free Compliant
Applications
• Load switch • PWM
AO3451
30V P-Channel MOSFET
Product Summary
VDS ID (at VGS=-10V) RDS(ON) (at VGS=-10V) RDS(ON) (at VGS =-4.5V) RDS(ON) (at VGS=-2.5V)
TJ, TSTG
Maximum -30 ±12 -4 -3.2 -27 1.4 0.9
-55 to 150
Thermal Characteristics
Parameter
Symbol
Typ
Maximum Junction-to-Ambient A t ≤ 10s Maximum Junction-to-Ambient A D Steady-State
2
VGS=-2.5V ID=-2.5A
10
1
0.8 0
25 50 75 100 125 150 175
Temperature (°C) 0 Figure 4: On-Resistance vs. Junction18Temperature
(Note E)
RDS(ON) (mΩ)
150 ID=-4A
130
2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
APPLICATIONS OR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
2.5
nC
tD(on)
Turn-On DelayTime
6.5
ns
tr
Turn-On Rise Time
VGS=-10V, VDS=-15V,
3.5
ns
tD(off)
Turn-Off DelayTime
RL=3.75Ω, RGEN=3Ω
41
ns
tf
Turn-Off Fall Time
9
ns
trr
Body Diode Reverse Recovery Time IF=-4.0A, dI/dt=100A/µs
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
VGS=0V, VDS=-15V, f=1MHz VGS=0V, VDS=0V, f=1MHz
645
pF
80
pF
55
-ID(A)
20 VDS=-5V
15
10
5
125°C
25°C
0
0
0.5
1
1.5
2
2.5
3
-VGS(Volts) Figure 2: Transfer Characteristics (Note E)
100
1.8
Normalized On-Resistance
RDS(ON) (mΩ)
80 VGS=-2.5V
RθJA
70 100
Maximum Junction-to-Lead
Steady-State
RθJL
63
Max 90 125 80
Units V V
A
W °C
Units °C/W °C/W °C/W
Rev.1.0: May 2016
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Page 1 of 5
AO3451
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min Typ Max Units
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
ID=-250µA, VGS=0V
-30
IDSS
Zero Gate Voltage Drain Current
pF
4
7.8 12
Ω
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
14
nC
Qg(4.5V) Total Gate Charge
Qgs
Gate Source Charge
7
nC
VGS=-10V, VDS=-15V, ID=-4.0A
1.5
nC
Qgd
Gate Drain Charge
D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with
-27
VGS=-10V, ID=-4.0A
RDS(ON) Static Drain-Source On-Resistance
TJ=125°C VGS=-4.5V, ID=-3.5A
VGS=-2.5V, ID=-2.5A
gFS
Forward Transconductance
VDS=-5V, ID=-4.0A
10 VDS=-15V ID=-4A
8
1000 800 Ciss
6
600
Capacitance (pF)
-VGS (Volts)
4
2
0
0
5
10
15
Qg (nC) Figure 7: Gate-Charge Characteristics
100.0
10.0 1.0
RDS(ON) limited
10µs 100µs
11
ns
Qrr
Body Diode Reverse Recovery Charge IF=-4.0A, dI/dt=100A/µs
3.5
nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design.
-30V -4.0A < 50mΩ < 60mΩ < 85mΩ
SOT23
Top View
Bottom View
D
D D
S
G
G
S
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
Rev.1.0: May 2016
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Page 2 of 5
AO3451
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
-ID (A)
25 10V
20
4.5V
15 -2.5V
10
5 VGS=-2.0V
0
0
1
2
3
4
5
-VDS (Volts) Fig 1: On-Region Characteristics (Note E)
VSD
Diode Forward Voltage
IS=-1A,VGS=0V
IS
Maximum Body-Diode Continuous Current
V
-1 µA
-5
±100 nA
-0.9 -1.3 V
A
41
50
mΩ
62
75
47
60 mΩ
60
85 mΩ
17
S
-0.7 -1
V
-2
A
DYNAMIC PARAMETERS
B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initialTJ=25°C.
25°C
1.0E-05 0.0 0.2 0.4 0.6 0.8 1.0 1.2
-VSD (Volts) Figure 6: Body-Diode Characteristics (Note E)
Rev.1.0: May 2016
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Page 3 of 5
AO3451
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1ms 10ms
0.1
TJ(Max)=150°C
TA=25°C
10s DC
0.0
0.01
0.1
1
10
100
-VDS (Volts) Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
Power (W)
400
200
Coss
0 Crss
0
5
10
15
20
25
30
-VDS (Volts) Figure 8: Capacitance Characteristics
10000 1000
TA=25°C
100
10
1
0.00001 0.001
0.1
10
1000
Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-to-
60 VGS=-4.5V
40 VGS=-10V
20
0
2
4
6
8
10
-ID (A) Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Not源自文库 E)
1.6
VGS=-10V
ID=-4A
1.4
VGS=-4.157V
ID=-3.5A 5
1.2
Ambient (Note F)
-ID (Amps)
10 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA
1 RθJA=125°C/W
In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
ZθJA Normalized Transient Thermal Resistance
VDS
Gate-Source Voltage
VGS
Continuous Drain Current
TA=25°C TA=70°C
ID
Pulsed Drain Current C
IDM
TA=25°C Power Dissipation B TA=70°C
PD
Junction and Storage Temperature Range