IC工艺几种IC工艺流程
合集下载
相关主题
- 1、下载文档前请自行甄别文档内容的完整性，平台不提供额外的编辑、内容补充、找答案等附加服务。
- 2、"仅部分预览"的文档,不可在线预览部分如存在完整性等问题,可反馈申请退款(可完整预览的文档不适用该条件!)。
- 3、如文档侵犯您的权益，请联系客服反馈,我们会尽快为您处理(人工客服工作时间：9:00-18:30)。
Nitride Deposition
Contact holes
S GD
Contact Etch
Metal contacts
dS rGaiDn
Metal Deposition and
Etch
CMOS Process Flow
• Overview of Areas in a Wafer Fab
– Diffusion – Photolithography – Etch – Ion Implant – Thin Films – Polish
Etchant gas entering gas inlet
Electromagnetic field
Free electron
e-
e-
Ion sheath
e-
+ Chamber wall
Positive ion
R
Radical chemical
Vacuum line
High-frequency energy
oxide
Photoresist Develop
Ionized CF4 gas photoresist
oxide
Ionized oxygen gas oxide
Oxide Etch
Photoresist Strip
oxygen gate oxide
Oxidation (Gate oxide)
Dopant gas Silane gas polysilicon
第五单元：集成技术简介
第十二章：几种IC工艺流程 12.1. CMOS工艺
After studying the material in this chapter, you will be able to:
1. Draw a diagram showing how a typical wafer flows in a submicron CMOS IC fab.
Gas cabinet Ion source Filament Plasma
Extraction assembly Analyzing magnet Ion beam
Lighter ions
Mass resolving slit Acceleration column
RF coax cable Photon Glow discharge (plasma) Vacuum gauge Wafer
Cathode electrode
Flow of byproducts and process gases
Exhaust to vacuum pump
Simplified Schematic of Ion Implanter
Simplified Schematic of a Photolithography Processing
Module
Load Station
Vapor Prime
Resist Develop- Edge-Bead
Coat
Rinse Removal Transfer Station
Wafer Stepper (Alignment/Exposure System)
Wafer Cassettes
Wafer Transfer System
Soft Bake
Cool Plate
Cool Plate
Hard Bake
Simplified Schematic of Dry Plasma Etcher
Gas distribution baffle Anode electrode
Photo
Etch
Test/Sort
Implant
Simplified Schematic of High-Temperature Furnace
Temperature controller
Thermocouple measurements
Gas flow controller
Process gas
描述CMOS工艺14个步骤的主要目的
4. Discuss the key process and equipment used in each CMOS manufacturing step. 能讨论每一步流程的关键工艺和设备
Major Fabrication Steps in MOS Process Flow
Ionized CCl4 gas oxide
Polysilicon Deposition
Polysilicon Mask and Etch
Scanning ion beam
G
ox S
D
Ion Implantation
G SD
Active Regions
silicon nitride
top nitride S GD
Model of Typical Wafer Flow in a Sub-Micron CMOS IC Fab
Wafer Fabrication (front-end)
Wafer Start
Unpatterned Wafer
Thin Films
Polish
Completed Wafer
Diffusion
画出典型的流程图
2. Give an overview of the six major process areas and the sort/test area in the wafer fab.
对6种主要工艺的应用和测试有大概的认识
3. For each of the 14 CMOS manufacturing steps, describe its primary purpose.
Quartz tube
Temperaturesetting voltages
Heater 1 Heater 2 Heater 3
Three-zone Heating Elements
Pressure controller
Exhaust
Photolithography Bay in a Sub-micron Wafer Fab
oxygen
Silicon dioxide
Silicon substrate
Oxidation (Field oxide)
photoresist
ቤተ መጻሕፍቲ ባይዱ
UV light
Mask
exposed photoresist
Photoresist
Mask-Wafer
Exposed
Coating Alignment and Exposure Photoresist
Contact holes
S GD
Contact Etch
Metal contacts
dS rGaiDn
Metal Deposition and
Etch
CMOS Process Flow
• Overview of Areas in a Wafer Fab
– Diffusion – Photolithography – Etch – Ion Implant – Thin Films – Polish
Etchant gas entering gas inlet
Electromagnetic field
Free electron
e-
e-
Ion sheath
e-
+ Chamber wall
Positive ion
R
Radical chemical
Vacuum line
High-frequency energy
oxide
Photoresist Develop
Ionized CF4 gas photoresist
oxide
Ionized oxygen gas oxide
Oxide Etch
Photoresist Strip
oxygen gate oxide
Oxidation (Gate oxide)
Dopant gas Silane gas polysilicon
第五单元：集成技术简介
第十二章：几种IC工艺流程 12.1. CMOS工艺
After studying the material in this chapter, you will be able to:
1. Draw a diagram showing how a typical wafer flows in a submicron CMOS IC fab.
Gas cabinet Ion source Filament Plasma
Extraction assembly Analyzing magnet Ion beam
Lighter ions
Mass resolving slit Acceleration column
RF coax cable Photon Glow discharge (plasma) Vacuum gauge Wafer
Cathode electrode
Flow of byproducts and process gases
Exhaust to vacuum pump
Simplified Schematic of Ion Implanter
Simplified Schematic of a Photolithography Processing
Module
Load Station
Vapor Prime
Resist Develop- Edge-Bead
Coat
Rinse Removal Transfer Station
Wafer Stepper (Alignment/Exposure System)
Wafer Cassettes
Wafer Transfer System
Soft Bake
Cool Plate
Cool Plate
Hard Bake
Simplified Schematic of Dry Plasma Etcher
Gas distribution baffle Anode electrode
Photo
Etch
Test/Sort
Implant
Simplified Schematic of High-Temperature Furnace
Temperature controller
Thermocouple measurements
Gas flow controller
Process gas
描述CMOS工艺14个步骤的主要目的
4. Discuss the key process and equipment used in each CMOS manufacturing step. 能讨论每一步流程的关键工艺和设备
Major Fabrication Steps in MOS Process Flow
Ionized CCl4 gas oxide
Polysilicon Deposition
Polysilicon Mask and Etch
Scanning ion beam
G
ox S
D
Ion Implantation
G SD
Active Regions
silicon nitride
top nitride S GD
Model of Typical Wafer Flow in a Sub-Micron CMOS IC Fab
Wafer Fabrication (front-end)
Wafer Start
Unpatterned Wafer
Thin Films
Polish
Completed Wafer
Diffusion
画出典型的流程图
2. Give an overview of the six major process areas and the sort/test area in the wafer fab.
对6种主要工艺的应用和测试有大概的认识
3. For each of the 14 CMOS manufacturing steps, describe its primary purpose.
Quartz tube
Temperaturesetting voltages
Heater 1 Heater 2 Heater 3
Three-zone Heating Elements
Pressure controller
Exhaust
Photolithography Bay in a Sub-micron Wafer Fab
oxygen
Silicon dioxide
Silicon substrate
Oxidation (Field oxide)
photoresist
ቤተ መጻሕፍቲ ባይዱ
UV light
Mask
exposed photoresist
Photoresist
Mask-Wafer
Exposed
Coating Alignment and Exposure Photoresist