CM100TU-24H中文资料

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IGBT的型号,参数,及价格总结

IGBT的型号,参数,及价格总结
30A/600V IGBT单管
43
CT 15SM-24
15A/1200V IGBT单管
CT 35SM-8
200A/400V IGBT单管
41
CT 75AM-12
75A/600V IGBT单管
78
三菱型号(1U 600V) IGBT
技术指标
批价(元)
三菱型号(1U 600V) IGBT
技术指标
批价(元)
400A/1200V/1U
1150
1MBI 200F-120
200A/1200V/1U
655
1MBI 400NN-120
400A/1200V/1U
1150
1MBI 300F-120
300A/1200V/1U
880
1MBI 400L(N)(S)-120
400A/1200V/1U
1150
1MBI 300L(N)(S)-120
200A/1200V/2U
930/1030
CM 150E3Y(E3U)-24E
150A/1400V/2U
880/960
CM 300DY(DU)-24(E)
300A/1200V/2U
1630/1580
CM 200E3Y(E3U)-24E
200A/1400V/2U
1080/1210
CM 50DY-28H
300A/600V/2U
780/880
CM 300E3Y(E3U)-12E
300A/600V/2U
960/1080
CM 400DY(DU)-12H(E)
400A/600V/2U
1455
型号2U
(1200/1400V) IGBT

CM300DU-24NFH中文资料

CM300DU-24NFH中文资料

Gate-emitter threshold voltage Thermal resistance *1Collector-emitter voltage Gate-emitter voltage Maximum collector dissipation Maximum collector dissipation Junction temperature Storage temperature Isolation voltage WeightV CE = V CES , V GE = 0V V GE = V GES , V CE = 0V T j = 25°CT j = 125°C V CC = 600V, I C = 300A, V GE = 15V V CC = 600V, I C = 300A V GE1 = V GE2 = 15VR G = 1Ω, Inductive load switching operation I E = 300AI E = 300A, V GE = 0V IGBT part (1/2 module)FWDi part (1/2 module)Case to fin, Thermal compound Applied *2 (1/2 module)IGBT part (1/2 module)FWDi part (1/2 module)I C = 30mA, V CE = 10VI C = 300A, V GE = 15VV CE = 10V V GE = 0V1200±2030060030060011301900–40 ~ +150–40 ~ +12525003.5 ~ 4.53.5 ~ 4.5400HIGH POWER SWITCHING USEV V A A A A W W °C °C V N • m N • m g116.5—4740.9—30080500150250—3.50.110.18—0.066*30.1*310mA µA nF nF nF nC ns ns ns ns µC V °C/W °C/W °C/W °C/W °C/W Ω——5.05.0———1360—————13———0.04———————————————————————16V V 4.57.5ns Collector cutoff current Gate leakage current Collector-emittersaturation voltage (Note 4)Input capacitance Output capacitanceReverse transfer capacitance Total gate charge Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall timeReverse recovery time Reverse recovery charge Emitter-collector voltage Contact thermal resistance Thermal resistance *4External gate resistanceI CES I GES C ies C oes C res Q G t d(on)t rt d(off)t ft rr (Note 1)Q rr (Note 1)V EC(Note 1)R th(j-c)Q R th(j-c)R R th(c-f)R th(j-c’)Q R th(j-c’)R R GSymbol ParameterV GE(th)V CE(sat)*1 : T C measured point is shown in page OUTLINE DRAWING.*2 : Typical value is measured by using Shin-etsu Silicone “G-746”.*3 : If you use this value, R th(f-a) should be measured just under the chips.*4 : T C ’ measured point is just under the chips.Note 1. I E , V EC , t rr & Q rr represent characteristics of the anti-parallel, emitter to collector free-wheel diode (FWDi).2. Pulse width and repetition rate should be such that the device junction temp. (T j ) does not exceed T jmax rating.3. Junction temperature (T j ) should not increase beyond 150°C.4. No short circuit capability is designed.G-E Short C-E Short Operation (Note 2)Pulse (Note 2)Operation (Note 2)Pulse(Note 2)T C = 25°C T C ’ = 25°C *4Main Terminal to base plate, AC 1 min.Main Terminal M6Mounting holes M6Typical valueSymbol ParameterCollector current Emitter currentMounting torque ConditionsUnit Ratings V CES V GES I C I CMI E (Note 1)I EM (Note 1)P C (Note 3)P C ’ (Note 3)T j T stg V iso———Unit Typ.Limits Min.Max.Test conditionsMAXIMUM RATINGS (Tj = 25°C)ELECTRICAL CHARACTERISTICS (Tj = 25°C)HIGH POWER SWITCHING USEHIGH POWER SWITCHING USE。

IGBT型号大全一览

IGBT型号大全一览

IGBT型号大全一览型号(1U 1200V )技术指标型号(1U 1700V) 技术指标BSM200GA120DN2 200A/1200V/1U BSM200GA170DN2 200A/1700V/1U BSM300GA120DN2 300A/1200V/1U BSM300GA170DN2 300A/1700V/1U BSM400GA120DN2 400A/1200V/1U BSM400GA170DLC 400A/1700V/1U BSM200GA120DLC 200A/1200V/1U BSM200GA170DLC 200A/1700V/1U BSM300GA120DLC 300A/1200V/1U BSM300GA170DLC 300A/1700V/1U BSM400GA120DLC 400A/1200V/1U型号2U/600/1200/1700V )技术指标型号(2U 1200V/1700V) 技术指标BSM50GB60DLC 50A/600V/2U BSM75GB170DN2 75A/1700V/2UBSM75GB60DLC 75A/600V/2U BSM100GB170DN2 100A/1700V/2UBSM100GB60DLC 100A/600V/2U BSM150GB170DN2 150A/1700V/2U BSM150GB60DLC 150A/600V/2U BSM200GB170DLC 200A/1700V/2U BSM200GB60DLC 200A/600V/2U BSM25GAL120DN2 25A/1200V/2U BSM300GB60DLC 300A/600V/2U BSM50GAL120DN2 50A/1200V/2U BSM25GB120DN2 25A/1200V/2U BSM75GAL120DN2 75A/1200V/2UBSM35GB120DN2 35A/1200V/2U BSM100GAL120DN2 100A/1200V/2U BSM50GB120DN2 50A/1200V/2U BSM150GAL120DN2 150A/1200V/2U BSM75GB120DN2 75A/1200V/2U BSM200GAL120DN2 200A/1200V/2U BSM100GB120DN2K 100A/1200V/2U BSM300GAL120DN2 300A/1200V/2U BSM35GB120DLC 35A/1200V/2U BSM100GAL120DLCK 100A/1200V/2U BSM50GB120DLC 50A/1200V/2U BSM150GAL120DLC 150A/1200V/2U BSM75GB120DLC 75A/1200V/2U BSM200GAL120DLC 200A/1200V/2U BSM150GB170DLC 150A/1700V/2U BSM300GAL120DLC 300A/1200V/2U BSM100GB120DN2 100A/1200V/2U BSM75GAR120DN2 75A/1200V/2U BSM150GB120DN2 150A/1200V/2U BSM100GAR120DN2 100A/1200V/2U BSM200GB120DN2 200A/1200V/2U BSM150GAR120DN2 150A/1200V/2U BSM300GB120DN2 300A/1200V/2U BSM200GAR120DN2 200A/1200V/2U BSM100GB120(DLC 100A/1200V/2U BSM200GB120DLC 200A/1200V/2U BSM150GB120DLC 150A/1200V/2U BSM300GB120DLC 300A/1200V/2U BSM50GB170DN2 50A/1700V/2U BSM300GAR120DN2 300A/1200V/2U BSM100GB120DLCK 100A/100V/2U型号6U /600V/1200V 技术指标型号(6U /1200V/1700V) 技术指标BSM10GD60DLC 10A/600V/6U BSM25GD120DN2 25A/1200V/6UBSM15GD60DLC 15A/600V/6U BSM25GD120D2 25A/1200V/6UBSM25GD60DLC 25A/600V/6U BSM35GD120DN2 35A/1200V/6UBSM30GD60DLC 30A/600V/6U BSM35GD120D2 35A/1200V/6UBSM50GD60DLC 50A/600V/6U BSM50GD120DN2 50A/1200V/6UBSM75GD60DLC 75A/600V/6U BSM75GD120DN2 75A/1200V/6UBSM100GD60DLC 100A/600V/6U BSM50GD120DLC 50A/1200V/6UBSM100GD120DN2 100A/1200V/6U BSM75GD120DLC 75A/1200V/6U BSM100GD120DLC 100A/1200V/6U BSM35GD120DLC 35A/1200V/6UBSM150GD60DLC 150A/600V/6U BSM50GD170DL 50A/1700V/6UBSM200GD60DLC 200A/600V/6U BSM75GD170DL 75A/1700V/6UBSM10GD120DN2 10A/1200V/6U BSM100GT170DL 100A/1700V/6U BSM15GD120D2 15A/1200V/6U BSM100GT120DN2 100A/1200V/6UBSM15GD120DN1 15A/1200V/6U BSM150GT120DN2 150A/1200V/6U BSM15GD120DN2 15A/1200V/6U BSM150GT170DL 150A/1700V/6U BSM25GD120DN1 25A/1200V/6U BSM200GT120DN2 200A/1200V/6U 二.欧派克超大功率EUPEC IGBT 模块( 1200V/1600V/2500V/3300V 系列) 型号( 1 单元) 技术指标型号(1 单元) 技术指标FZ200R12KF2 200A/1200V/1U FZ1200R12KF4 1200A/1200V/1UFZ300R12KF2 300A/1200V/1U FZ1200R16KF4 1200A/1600V/1UFZ400R12KF2 400A/1200V/1U FZ1200R25KF1 1200A/2500V/1UFZ800R12KF4 800A/1200V/1U FZ1200R25KF4 1200A/2500V/1UFZ800R16KF4 800A/1600V/1U FZ1200R33KF1 1200A/3300V/1UFZ800R33KF1 800A/3300V/1U FZ1600R12KF4 1600A/1200V/1UFZ900R16KF1 900A/1600V/1U FZ1800R12KF4 1800A/1200V/1UFZ1000R12KF4 1000A/1200V/1U FZ1800R16KF4 1800A/1600V/1UFZ2400R12KF4 2400A/1200V/1U型号( 2 单元) 技术指标型号( 2 单元) 技术指标FZ200R33KF2 200A/3300V/2U FZ600R12KF4 600A/1200V/2UFZ400R12KF4 400A/1200V/2U FZ600R16KF4 600A/1600V/2UFZ400R16KF4 400A/1600V/2U FZ800R12KF4 800A/1200V/2UFZ400R33KF1 400A/3300V/2U FZ800R17KF6B2 800A/1700V/2UFZ400R33KF2 400A/3300V/2U型号( 6 单元) 技术指标型号( 6 单元) 技术指标FS300R12KF4 300A/1200V/6U FS400R12KF4 400A/1200V/6UFS300R16KF4 300A/1600V/6UFF600R12KF4FF200R33KF2 FF400R16KF4FF400R12KF4 FF400R33KF1FF400R33KF2 FF800R12KF4FF600R16KF4 FF800R17KF6B2三.西门康SEMIKRON,IGBT 模块型号( 1U 1200V) 技术指标型号(1U /1700V) 技术指标SKM200GA123D 200A/1200V/1U SKM400GA173D 400A/1700V/1USKM300GA123D 300A/1200V/1U SKM300GA173D 400A/1700V/1USKM400GA123D 400A/1200V/1U SKM500GA174D 500A/1700V/1USKM500GA123D 500A/1200V/1U SKM500GA124D 500A/1200V/1USKM600GA124D 600A/1200V/1U型号( 2U/1200V/1700V ) 技术指标型号(2U /1200V/1700V) 技术指标SKM50GB123D 50A/1200V/2U SKM145GAL123D 145A/1200V/2USKM75GB123D 75A/1200V/2U SKM150GAL123D 150A/1200V/2USKM100GB123D 100A/1200V/2U SKM200GAL123D 200A/1200V/2U SKM145GB123D 145A/1200V/2U SKM300GAL123D 300A/1200V/2USKM150GB123D 150A/1200V/2U SKM400GAL124D 400A/1200V/2USKM200GB123D 200A/1200V/2U SKM100GAL173D 100A/1700V/2USKM300GB123D 300A/1200V/2U SKM145GAL174DN 145A/1700V/2USKM400GB123D 400A/1200V/2U SKM200GAL173D 200A/1700V/2USKM75GB124D 75A/1200V/2U SKM200GAL125D 200A/1200V/2USKM100GB124D 100A/1200V/2U SKM400GAL125D 400A/1200V/2USKM145GB124D 145A/1200V/2U SKM300GB124D 300A/1200V/2USKM150GB124D 150A/1200V/2U SKM400GB124D 400A/1200V/2USKM200GB124D 200A/1200V/2U SKM200GB174D 200A/1700V/2USKM75GB173D 75A/1700V/2U SKM200GAR173D 200A/1700V/2USKM100GB173D 100A/1700V/2U SKM75GAR123D 75A/1200V/2USKM150GB173D 150A/1700V/2U SKM100GAR123D 100A/1200V/2USKM145GB174DN 145A/1700V/2U SKM145GAR123D 145A/1200V/2USKM200GB173D 200A/1700V/2U SKM150GAR123D 150A/1200V/2USKM300GB174D 300A/1700V/2U SKM200GAR123D 200A/1200V/2USKM50GAL123D 50A/1200V/2U SKM300GAR123D 300A/1200V/2USKM75GAL123D 75A/1200V/2U SKM400GAR124D 400A/1200V/2USKM100GAL123D 100A/1200V/2U SKM145GAL124D 145A/1200V/2U型号( 6U 1200V ) 技术指标型号(6U 1200V) 技术指标SKM22GD123D 22A/1200V/6U SKM75GD123D 75A/1200V/6USKM40GD123D 40A/1200V/6U SKM100GD123D 100A/1200V/6USKM40GD124D 40A/1200V/6U SKM75GD124D 75A/1200V/6U四.三菱MITSUBISHI IGBT模块+单管IGBT(TO—220、TO—3P)(耐压600/1200/1400/1700/2500/3300V)型号技术指标型号(IGBT 单管) 技术指标CT60AM-20 60A/1000V IGBT单管CT75SM-12CT30SM-12 30A/600V IGBT单管CT15SM-24 15A/1200V IGBT单管CT35SM-8 200A/400V IGBT单管CT75AM-12 75A/600V IGBT单管型号技术指标型号技术指标CM300HA-12H 300A/600V/1U CM200HA-24H 200A/1200V/1UCM400HA-12H 400A/600V/1U CM300HA-24H 300A/1200V/1UCM600HA-12H 600A/600V/1U CM400HA-24H 400A/1200V/1UCM600HU-12H 600A/600V/1U CM600HA-24H 600A/1200V/1UCM400HU-24H 400A/1200V/1U CM600HU-24H 600A/1200V/1UCM200HU-24H 200A/1200V/1U CM800HA-24H 800A/1200V/1UCM300HU-24H 300A/1200V/1U CM1000HA-24H 1000A/1200V/1UCM300HA-12E 300A/600V/1U CM200HA-24E 200A/1200V/1UCM400HA-12E 400A/600V/1U CM300HA-24E 300A/1200V/1UCM600HA-12E 600A/600V/1U CM400HA-24E 400A/1200V/1UCM600HU-12E 600A/600V/1U CM600HA-24E 600A/1200V/1UCM400HU-24E 400A/1200V/1U CM600HU-24E 600A/1200V/1UCM200HU-24E 200A/1200V/1U CM800HA-24E 800A/1200V/1UCM300HU-24E 300A/1200V/1U CM1000HA-24E 1000A/1200V/1U型号技术指标型号技术指标CM400HA-28H 400A/1400V/1U CM800HA-50H 800A/2500V/1UCM600HA-28H 600A/1400V/1U CM1200HA-50H 1200A/2500V/1U CM1000HA-28H 1000A/1400V/1U CM800HA-66H 800A/3300V/1U CM400HA-34H 400A/1700V/1U CM1200HA-66H 1200A/3300V/1U CM800HD-66H 800A/3300V/1U CM800HD-50H 800A/2500V/1UCM1200HD-66H 1200A/3300V/1U CM1200HD-50H 1200A/2500V/1U 型号技术指标型号技术指标CM50DY-12H 50A/600V/2U CM50E3Y-12E 50A/600V/2UCM75DY-12H 75A/600V/2U CM75E3Y-12E 75A/600V/2UCM100DY-12H 100A/600V/2U CM100E3Y-12E 100A/600V/2UCM150DY-12H 150A/600V/2U CM150E3Y-12E 150A/600V/2UCM200DY-12H 200A/600V/2U CM200E3Y-12E 200A/600V/2UCM300DY-12H 300A/600V/2U CM300E3Y-12E 300A/600V/2UCM400DY-12H 400A/600V/2U CM50E3U-12E 50A/600V/2UCM75DU-12H 75A/600V/2U CM75E3U-12E 75A/600V/2UCM100DU-12H 100A/600V/2U CM100E3U-12E 100A/600V/2UCM150DU-12H 150A/600V/2U CM150E3U-12E 150A/600V/2UCM200DU-12H 200A/600V/2U CM200E3U-12E 200A/600V/2UCM300DU-12H 300A/600V/2U CM300E3U-12E 300A/600V/2UCM400DU-12H 400A/600V/2U CM75DU-12E 75A/600V/2UCM50DY-12E 50A/600V/2U CM100DU-12E 100A/600V/2UCM75DY-12E 75A/600V/2U CM150DU-12E 150A/600V/2UCM100DY-12E 100A/600V/2U CM200DU-12E 200A/600V/2UCM150DY-12E 150A/600V/2U CM300DU-12E 300A/600V/2UCM200DY-12E 200A/600V/2U CM400DU-12E 400A/600V/2UCM300DY-12E 300A/600V/2U CM400DY-12E 400A/600V/2U型号技术指标型号技术指标CM50DY-24H 50A/1200V/2U CM300DY-28H 300A/1400V/2UCM75DY-24H 75A/1200V/2U CM50E3Y-24E 50A/1200V/2UCM100DY-24H 100A/1200V/2U CM75E3Y-24E 75A/1200V/2UCM150DY-24H 150A/1200V/2U CM100E3Y-24E 100A/1200V/2U CM200DY-24H 200A/1200V/2U CM150E3Y-24E 150A/1200V/2U CM300DY-24H 300A/1200V/2U CM200E3Y-24E 200A/1200V/2U CM50DU-24H 50A/1200V/2U CM50E3U-24E 50A/1200V/2UCM75DU-24H 75A/1200V/2U CM75E3U-24E 75A/1200V/2UCM100DU-24H 100A/1200V/2U CM100E3U-24E 100A/1200V/2U CM150DU-24H 150A/1200V/2U CM150E3U-24E 150A/1200V/2U CM200DU-24H 200A/1200V/2U CM200E3U-24E 200A/1200V/2U CM300DU-24H 300A/1200V/2U CM300E3Y-24E 300A/1200V/2U CM50DY-24E 50A/1200V/2U CM50DU-24E 50A/1200V/2UCM75DY-24E 75A/1200V/2U CM75DU-24E 75A/1200V/2UCM100DY-24E 100A/1200V/2U CM100DU-24E 100A/1200V/2UCM150DY-24E 150A/1200V/2U CM150DU-24E 150A/1200V/2UCM200DY-24E 200A/1200V/2U CM200DU-24E 200A/1200V/2UCM300DY-24E 300A/1200V/2U CM300DU-24E 300A/1200V/2UCM50DY-28H 50A/1400V/2U CM300E3U-24E 300A/1200V/2UCM75DY-28H 75A/1400V/2U CM400DY-50H 400A/2500V/2UCM200DY-28H 200A/1400V/2U CM400DY-66H 400A/3300V/2U型号技术指标型号技术指标CM15TF-12H 15A/600V/6U CM15TF-24H 15A/1200V/6UCM20TF-12H 20A/600V/6U CM20TF-24H 20A/1200V/6UCM30TF-12H 30A/600V/6U CM30TF-24H 30A/1200V/6UCM50TF-12H 50A/600V/6U CM50TF-24H 50A/1200V/6UCM75TF-12H 75A/600V/6U CM75TF-24H 75A/1200V/6UCM100TF-12H 100A/600V/6U CM100TF-24H 100A/1200V/6UCM150TF-12H 150A/600V/6U CM50TF-28H 50A/1400V/6UCM75TU-12H 75A/600V/6U CM50TU-24H 50A/1200V/6UCM100TU-12H 100A/600V/6U CM75TU-24H 75A/1200V/6UCM150TU-12H 150A/600V/6U CM100TU-24H 100A/1200V/6UCM15TF-12E 15A/600V/6U CM15TF-24E 15A/1200V/6UCM20TF-12E 20A/600V/6U CM20TF-24E 20A/1200V/6UCM30TF-12E 30A/600V/6U CM30TF-24E 30A/1200V/6UCM50TF-12E 50A/600V/6U CM50TF-24E 50A/1200V/6UCM75TF-12E 75A/600V/6U CM75TF-24E 75A/1200V/6UCM100TF-12E 100A/600V/6U CM100TF-24E 100A/1200V/6UCM150TF-12E 150A/600V/6U CM50TU-24E 50A/1200V/6UCM75TU-12E 75A/600V/6U CM75TU-24E 75A/1200V/6UCM100TU-12E 100A/600V/6U CM100TU-24E 100A/1200V/6UCM150TU-12E 150A/600V/6U CM50TF-28H 50A/1400V/6UCM200TU-12H 200A/600V/6U CM75TF-28H 75A/1400V/6UCM100TF-28H 100A/1400V/6U五.富士Fuji IGBT 模块( 耐压600V/1200V/1400V/1800V/2000V 系列) 型号( 1U 600V ) 技术指标型号(1U 600V) 技术指标1MBH60D-100 60A/1000V IGBT单管1MBI200NK-060 200A/600V/1U1MBI30L-060 30A/600V/1U 1MBI300L-060 300A/600V/1U1MBI50L-060 50A/600V/1U 1MBI300N-060 300A/600V/1U1MBI75L-060 75A/600V/1U 1MBI300F-060 300A/600V/1U1MBI100L-060 100A/600V/1U 1MBI400F-060 400A/600V/1U1MBI150NH-060 150A/600V/1U 1MBI400L-060 400A/600V/1U1MBI400N-060 400A/600V/1U 1MBI600LP-060 600A/600V/1U1MBI150NK-060 150A/600V/1U 1MBI600LN-060 600A/600V/1U1MBI200NH-060 200A/600V/1U 1MBI600NP-060 600A/600V/1U1MBI600NN-060 600A/600V/1U型号(1U 1200V ) 技术指标型号(1U 1200V) 技术指标1MBI200L-120 200A/1200V/1U 1MBI400NP-120 400A/1200V/1U1MBI200N-120 200A/1200V/1U 1MBI200S-120 200A/1200V/1U1MBI200F-120 200A/1200V/1U 1MBI400NN-120 400A/1200V/1U1MBI300F-120 300A/1200V/1U 1MBI400L-120 400A/1200V/1U1MBI300L-120 300A/1200V/1U 1MBI600PX-120 600A/1200V/1U1MBI300N-120 300A/1200V/1U 1MBI300S-120 300A/1200V/1U1MBI300JN-120 300A/1200V/1U 型号(1U1400/1800/2000V) 技术指标1MBI300JB-120 300A/1200V/1U 1MBI600PX-140 600A/1400V/1U1MBI300NP-120 300A/1200V/1U 1MBI800PN-180 800A/1800V/1U1MBI300NN-120 300A/1200V/1U 1MBI400L-200 400A/2000V/1U型号( 2U 600V) 技术指标型号(2U 600V) 技术指标2MBI50L-060 50A/600V/2U 2MBI200LB-060 200A/600V/2U2MBI75L-060 75A/600V/2U 2MBI300L-060 300A/600V/2U2MBI100L-060 100A/600V/2U 2MBI300LB-060 300A/600V/2U2MBI150L-060 150A/600V/2U 2MBI300NK-060 300A/600V/2U2MBI150LB-060 150A/600V/2U 2MBI300NK-060 300A/600V/2U2MBI150NK-060 150A/600V/2U 2MBI400NK-060 400A/600V/2U2MBI50F-060 50A/600V/2U 2MBI200KB-060 200A/600V/2U2MBI75F-060 75A/600V/2U 2MBI300F-060 300A/600V/2U2MBI100F-060 100A/600V/2U 2MBI300KB-060 300A/600V/2U2MBI150F-060 150A/600V/2U 2MBI300NB-060 300A/600V/2U2MBI150KB-060 150A/600V/2U 2MBI400NR-060 400A/600V/2U2MBI150NC-060 150A/600V/2U 2MBI300N-060 300A/600V/2U2MBI50N-060 50A/600V/2U 2MBI150N-060 150A/600V/2U2MBI75N-060 75A/600V/2U 2MBI200N-060 200A/600V/2U2MBI100N-060 100A/600V/2U 2MB400N-060 400A/600V/2U2MB400L-060 400A/600V/2U 2MBI600NT-060 600A/600V/2U2MBI200NR-060 200A/600V/2U 2MBI200F-060 200A/600V/2U2MBI200NK-060 200A/600V/2U 2MBI400L-060 400A/600V/2U2MBI400N-060 400A/600V/2U 2MBI200L-060 200A/600V/2U型号( 2U 1400V ) 技术指标型号(2U 1400V) 技术指标2MBI25L-120 25A/1200V/2U 2MBI150L-120 150A/1200V/2U2MBI50L-120 50A/1200V/2U 2MBI150NB-120 150A/1200V/2U2MBI75L-120 75A/1200V/2U 2MBI150NT-120 150A/1200V/2U2MBI100L-120 100A/1200V/2U 2MBI200L-120 200A/1200V/2U2MBI75SC-120 75A/1200V/2U 2MBI150F-120 150A/1200V/2U2MBI150SC-120 150A/1200V/2U 2MBI150N-120 150A/1200V/2U2MBI50N-120 50A/1200V/2U 2MBI150NC-120 200A/1200V/2U2MBI75N-120 75A/1200V/2U 2MBI150NT-120 300A/1200V/2U2MBI100F-120 100A/1200V/2U 2MBI200N-120 200A/1200V/2U2MBI100N-120 100A/1200V/2U 2MBI75P-140 75A/1400V/2U2MBI50P-140 50A/1400V/2U 2MBI200PB-140 200A/1400V/2U2MBI100PC-140 100A/1400V/2U 2MBI300P-140 300A/1400V/2U2MBI150PC-140 150A/1400V/2U 2MBI100SC-120 100A/1200V/2U2MBI100NC-120 100A/1200V/2U 2MBI100NB-120 100A/1200V/2U2MBI200S-120 200A/1200V/2U 2MBI200NF120 200A/1200V/2U2MBI300L-120 300A/1200V/2U 2MBI200NB-120 200A/1200V/2U型号( 6U 600V ) 技术指标型号(6U 600V) 技术指标6MBI10L-060 10A/600V/6U 6MBI60FA-060 60A/600V/6U6MBI15L-060 15A/600V/6U 6MBI75L-060 75A/600V/6U6MBI10F-060 10A/600V/6U 6MBI10N-060 10A/600V/6U6MBI15F-060 15A/600V/6U 6MBI75F-060 75A/600V/6U6MBI15N-060 15A/600V/6U 6MBI75N-060 75A/600V/6U6MBI15LS-060 15A/600V/6U 6MBI75FA-060 75A/600V/6U6MBI20L-060 20A/600V/6U 6MBI100L-060 100A/600V/6U6MBI30L-060 30A/600V/6U 6MBI100FA-060 100A/600V/6U6MBI20F-060 20A/600V/6U 6MBI100F-060 100A/600V/6U6MBI30F-060 30A/600V/6U 6MBI30N-060 30A/600V/6U6MBI30FA-060 30A/600V/6U 6MBI150FB-060 150A/600V/6U6MBI50L-060 50A/600V/6U 6MBI200FB-060 200A/600V/6U6MBI50F-060 50A/600V/6U 6MBI50N-060 50A/600V/6U6MBI50FA-060 50A/600V/6U 6MBI50J-060 50A/600V/6U6MBI100J-060 100A/600V/6U型号( 6U 1200V ) 技术指标型号(6U 1200V) 技术指标6MBI8L-120 8A/1200V/6U 6MBI15S-120 15A/1200V/6U6MBI8F-120 8A/1200V/6U 6MBI8N-120 8A/1200V/6U6MBI15L-120 15A/1200V/6U 6MBI25S-120 25A/1200V/6U6MBI25L-120 25A/1200V/6U 6MBI35S-120 35A/1200V/6U6MBI25LB-120 25A/1200/6U 6MBI50S-120 50A/1200V/6U6MBI50L-120 50A/1200V/6U 6MBI75S-120 75A/1200V/6U6MBI50F-120 50A/1200V/6U 6MBI50N-120 50A/1200V/6U6MBI15F-120 15A/1200V/6U 6MBI15N-120 15A/1200V/6U6MBI25F-120 25A/1200V/6U 6MBI25N-120 25A/1200V/6U6MBI50J-120 50A/1200V/6U 6MBI100S-120 100A/1200V/6U富士IGBT 六单元,小型单列直插式封装,体积小,价格低,特别适用于家用电器变频控制UPS、AC/DC伺服系统等。

CM1002中文资料

CM1002中文资料

CM1000, 1500, 2500, 3500 SERIESHIGH CURRENT SILICON BRIDGE RECTIFIERSVOLTAGE - 50 to 800 VoltsCURRENT - 10 to 35 AmperesRecongnized File #E111753FEATURESl Electrically Isolated Metal Case for Maximum Heat Dissipation l Surge Overload Ratings to 400 Amperesl These bridges are on the U/LRecognized Products List forcurrents of 10, 25 and 35 amperes MECHANICAL DA TACase: Metal, electrically isolated Terminals: Plated .25” FASTON or wire Lead £r 40 mils Weight: 1 ounce, 30 grams Mounting position: AnyMACXIMUM RA TINGS AND ELECTRICAL CHARACTERISTICSRating at 25¢J ambient temperature unless otherwise specified.Single phase, half wave, 60Hz, resistive or inductive load.For capacitive load, derate current by 20%.-00-01-02-04-06-08UNITS Max Recurrent Peak Reverse Voltage 50100200400600800V Max RMS Input Voltage 3570140280420560V Max DC Blocking Voltage50100200400600800V CM1010A CM1515A CM2525A Max Average Forward Current*for Resistive Load at TC=55¢J CM3535A CM10200A CM15300A CM25300A Non-repetitive Peak Forward Surge Current at Rated Load CM35400A CM10 5A CM15 I F 7.5A CM25 12.5AMax Forward Voltage per Bridge Element at Specified Current CM35 17.5A 1.2VMax Reverse Leakage Current at Rated DC Blocking Voltage10£g A CM10CM15 / CM35I 2t Rating for fusing ( t < 8.3ms )CM25374 / 664A 2sTypical Thermal Resistance (Fig. 3) R £c JC 2.5¢J /W Operating Temperature Range T J Storage Temperature Range T STG -55 to +150¢JNOTES:* Unit mounted on metal heat-sinkCM-25 CM-25WRATING AND CHARACTERISTIC CURVES CM1000 THRU CM35001000100101.0VFM VOLTS PEAKCASE TEMPERATURE T C ¢JFig. 1-TYPICAL INSTANTANEOUS FORWARDCHARACTERISTICS AT T J = 25¢J Fig. 2-OUTPUT CURRENT VS. CASE TEMPERATURERESISTIVE OR INDUCTIVE LOAD T J = 150¢J25 40 60 80 100 120 140 160 180AMBIENT TEMPERATURE, T A ¢JAVERAGE OUTPUT CURRENT, AMPERESFig. 3-OUTPUT CURRENT VS. AMBIENT TEMPERATURE RESISTIVE OR INDUCTIVE LOAD BRIDGE MOUNTED ON A 8"×8" ALUMINUM PLATE 25"THICKFig. 4-POWER DISSIPATION VS. AVERAGE OUTPUT CURRENT RESISTIVE OR INDUCTI VE LOAD, T J = 150¢J。

CM100DC-24NFM中文资料

CM100DC-24NFM中文资料

TENTATIVECM100DC-24NFMPre. S.Kawabata,H.Takemoto,M.HiyoshiApr. Y.Nagashima 1-Dec-'06 RevHIGH POWER SWITCHING USE─────────────────────────────────────────────────── Notice: This is not a final specification. Some parametric limits are subject to change.CM100DC-24NFMI C ・・・・・・・・・・・・・・・・・・・・・・・・・・・・ 100A V CES ・・・・・・・・・・・・・・・・・・・・・・・・ 1200V Insulated Type2-elements in a pack Caution: No short circuit capability is designed.APPLICATIONHigh frequency switching use & Resonant inverter power supply, etcABSOLUTE MAXIMUM RATINGS (T j =25°C, unless otherwise specified) Symbol Item Conditions Ratings Units V CES Collector-emitter voltage G-E Short 1200 V V GES Gate-emitter voltage C-E Short ± 20 V I C Operation 100I CM Collector current Pulse *4200 A I E *3 Operation 100I EM *3 Emitter current Pulse *4 200 AP C *5 Maximum collector dissipation T C =25°C *1 670 W T j Junction temperature - 40 ~ +150°C T stg Storage temperature - 40 ~ +125°C V iso Isolation voltage Main terminal to base plate, AC 1 min. 2500 V- Torque strength Main terminal M6 3.5 ~ 4.5 N ・m - Torque strength Mounting holes M6 3.5 ~ 4.5 N ・m - Weight Typical value 375 g────────────────────────────────────────────────── ELECTRICAL CHARACTERISTICS (T j =25°C, unless otherwise specified) Symbol Item Conditions Min. Typ. Max.Units I CES Collector cutoff currentV CE =V CES , V GE =0V - - 1 mAV GE(th) Gate-emitterthreshold voltage I C =10mA, V CE =10V 4.5 6.0 7.5 VI GES Gate leakage current ±V GE =V GES , V CE =0V - - 0.5 μAI C =100A *6 T j =25°C - 3.0 4.5V CE(sat)Collector to emitter saturationvoltageV GE =15V T j =125°C - 3.0 -VC ies Input capacitance - - 16 C oes Output capacitance V GE =0V, V CE =10V *6 - - 1.3 nF C res Reverse transfer capacitance--0.3Q G Total gate charge V CC =600V, I C =100A, V GE =15V - 450 - nC t d(on) Turn-on delay time V CC =600V, I C =100A - - 100t r Turn-on rise timeV GE1=V GE2=15V, R G =3.1Ω - - 50t d(off) Turn-off delay time Inductive load - - 250t fTurn-off fall time switching operation - 60 200t rr *3 Reverse recovery time I E =100A - 70 120ns Q rr *3 Reverse recovery charge - 6 -μC V EC *3 Emitter-collector voltage I E =100A, V GE =0V - 2.0 3.0 V R th(j-c)Q IGBT part (1/2 module) *1 - - 0.186R th(j-c)RThermal resistanceFWDi part (1/2 module) *1 - - 0.28R th(c-f) Contact thermal resistance Case to fin, Thermal grease applied (1/2module) *1 *2- 0.02 -°C/W R G External gate resistance 3.1 - 31 Ω*1: T C , T f measured point is just under the chips.*2: Typical value is measured by using Shin-Etsu Chemical Co.,Ltd "G-747".*3: I E , I EM , V EC , t rr & Q rr represent characteristics of the anti-parallel, emitter to collector free-wheel diode (FWDi).*4: Pulse width and repetition rate should be such that the device junction temperature (T j ) dose not exceed Tjmax rating.*5: Junction temperature (T j ) should not increase beyond 150°C.*6: Pulse width and repetition rate should be such as to cause neglible temperature rise.──────────────────────────────────────────────────OUTLINE DRAWINGDimensions in mmCIRCUIT DIAGRAM。

RSS100N03中文资料

RSS100N03中文资料

Transistor1/3Switching (30V, ±10A)RSS100N03z Features1) Low on-resistance.2) Built-in G-S Protection Diode.3) Small and Surface Mount Package (SOP8).z ApplicationsPower switching, DC/DC converter.z External dimensions (Unit : mm)z Structure•Silicon N-channel MOS FET z Equivalent circuitthe source terminals to protect the diode against static electricity when the product is in use. Use the protection circuit when the fixed voltages are exceeded.z Absolute maximum ratings (T a=25°C)∗1∗1∗2ParameterV V DSS Symbol 30V V GSS 20A I D ±10A I DP ±40A I S 1.6A I SP 6.4W P D 2°C Tch 150°CTstg −55 to +150Limits Unit Drain-source voltage Gate-source voltage Drain current Total power dissipatino Channel temperature Strage temperatureContinuous Pulsed Continuous Source current (Body diode)Pulsed∗1 Pw ≤10µs, Duty cycle ≤1%∗2 Mounted on a ceramic board.Transistor2/3z Thermal resistance (T a=25°C)°C / WRth (ch-a)62.5ParameterSymbol Limits Unit Channel to ambient∗ Mounted on a ceramic board.∗z Electrical characteristics (T a=25°C)z Body diode characteristics (Source-Drain Characteristics) (T a=25°C)Forward voltageV SD −− 1.2V I S=6.4A, V GS =0VParameterSymbol Min.Typ.Max.Unit Conditions∗Pulsed∗z Electrical characteristic curvesDRAIN-SOURCE VOLTAGE : V DS (V)C A P A C I T A N C E : C (p F )Fig.1 Typical Capacitancevs. Drain-Source VoltageDRAIN CURRENT : I D (A)S W I T C H I N G T I M E : t (n s )Fig.2 Switching CharacteristicsTOTAL GATE CHARGE : Qg (nC)G A T E -S O U R C E V O L T A G E : V G S (V )Fig.3 Dynamic Input CharacteristicsTransistor3/3GATE-SOURCE VOLTAGE : V GS (V)D R A I N C U R RE N T : I D (A )Fig.4 Typical Transfer CharacteristicsGATE-SOURCE VOLTAGE : V GS (V)S T A T I C D R A I N -S O U R C E O N -S T A T E R E S I S T A N C E : R D S (o n ) (m Ω)Fig.5 Static Drain-SourceOn-State Resistance vs. Gate-Source VoltageSOURCE-DRAIN VOLTAGE : V SD (V)S O U R C E C U R R E N T : I s (A )Fig.6 Source Current vs.Source-Drain VoltageDRAIN CURRENT : I D (A)1101001000S T A T I C D R A I N -S O U R C E O N -S T A T E R E S I S TA N C E : R D S (o n ) (m Ω)Fig.7 Static Drain-SourceOn-State Resistance vs. Drain Current (Ι)DRAIN CURRENT : I D (A)S T A T I C D R A I N -S O U R C E O N -S T A T E R E S I S T A N C E : R D S (o n ) (m Ω)Fig.8 Static Drain-SourceOn-State Resistance vs. Drain Current (ΙΙ)DRAIN CURRENT : I D (A)S T A T I C D R A I N -S O U R C E O N -S T A T E R E S I S T A N C E : R D S (o n ) (m Ω)Fig.9 Static Drain-SourceOn-State Resistance vs. Drain Current (ΙΙΙ)AppendixAbout Export Control Order in JapanProducts described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade ControlOrder in Japan.In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.Appendix1-Rev1.0。

三菱IGBT模块CM100MXA-24S说明书

三菱IGBT模块CM100MXA-24S说明书

MITSUBISHI IGBT MODULESCM100MXA-24SHIGH POWER SWITCHING USEINSULATED TYPECM100MXA-24S- 6th Generation NX series -Collector current I C ............................... 100A Collector-emitter voltage V CES .. (1200V)●Flat base Type●Copper base plate (non-plating)●Tin plating pin terminals●RoHS Directive compliantCIB (Converter+Inverter+BrakeCopper ) ●UL Recognized under UL1557, File E323585APPLICATIONAC Motor Control, Motion/Servo Control, Power supply, etc. OUTLINE DRAWING & INTERNAL CONNECTIONTERMINALt=0.8SECTION ATolerance otherwise specified Division of DimensionTolerance 0.5 to 3 ±0.2 over 3 to 6 ±0.3 over 6 to 30 ±0.5 over 30 to 120 ±0.8 over 120 to 400 ±1.2INTERNAL CONNECTIONP1(48~49) N1(44~45)GUP(13)U(14~15)GUN(40)TH1(29)GVP(18)V(19~20)GVN(33)GWP(23)W(24~25)GWN(31)B(52~53)GB(41)N T CClampDiP(54~56) N(59~61) R(1~2) S(5~6) T(9~10)The tolerance of size between terminals is assumed to be ±0.4.INSULATED TYPEABSOLUTE MAXIMUM RATINGS (T j =25 °C, unless otherwise specified)Inverter part IGBT/FWDiSymbol Item ConditionsRating Unit V CES Collector-emitter voltage G-E short-circuited 1200 V V GESGate-emitter voltageC-E short-circuited±20VI C DC, T C =119 °C (Note.2, 4)100I CRM Collector current Pulse (Note.3)200 A P t o t Total power dissipationT C =25 °C (Note.2, 4) 750 WI E (Note.1) T C =25 °C (Note.2, 4)100I ERM(Note.1)Emitter currentPulse (Note.3)200 AT j m a xMaximum junction temperature-175°CBrake part IGBT/ClampDiSymbol Item ConditionsRating Unit V CES Collector-emitter voltage G-E short-circuited 1200 V V GESGate-emitter voltageC-E short-circuited±20VI C DC, T C =125 °C (Note.2)50I CRM Collector current Pulse (Note.3)100 A P t o t Total power dissipationT C =25 °C (Note.2, 4)425 WV RRM Repetitive peak reverse voltage G-E short-circuited1200VI F (Note.1)T C =25 °C (Note.2, 4)50I FRM(Note.1)Forward currentPulse (Note.3)100 AT j m a xMaximum junction temperature-175°CConverter part ConvDiSymbol Item ConditionsRating Unit V RRM Repetitive peak reverse voltage - 1600 V E a Recommended AC input voltage RMS440VI O DC output current 3-phase full wave rectifying, T C =125 °C (Note.2)100 AThe sine half wave 1 cycle peak value, I FSM Surge forward current f=60 Hz, non-repetitive1000 A I 2t Current square timeValue for one cycle of surge current 4165 A 2s T j m a xMaximum junction temperature-150°CModuleSymbol Item ConditionsRating Unit T C m a x Maximum case temperature (Note.2)125 °CT j o p Operating junction temperature - -40 ~ +150 T s t g Storage temperature --40 ~ +125 °C V i s o lIsolation voltageTerminals to base plate, RMS, f=60 Hz, AC 1 min2500VMECHANICAL CHARACTERISTICSLimitsSymbol Item Conditions Min. Typ. Max. UnitM sMounting torqueMounting to heat sink M 5 screw2.53.0 3.5 N·m Terminal to terminal6.47 - - d s Creepage distance Terminal to base plate 14.27 - - mm Terminal to terminal 6.47 - - d a Clearance Terminal to base plate 12.33--mmm Weight -- 300 - ge cFlatness of base plateOn the centerline X, Y(Note.5)±0 - +100 μmINSULATED TYPEELECTRICAL CHARACTERISTICS (T j =25 °C, unless otherwise specified) Inverter part IGBT/FWDiLimitsSymbol Item Conditions Min. Typ. Max. UnitI C ES Collector-emitter cut-off current V CE =V CES , G-E short-circuited - - 1 mAI G ES Gate-emitter leakage current V GE =V GES , C-E short-circuited - - 0.5 μAV G E(th) Gate-emitter threshold voltage I C =10 mA, V CE =10 V 5.4 6.0 6.6 VT j =25 °C - 1.80 2.25 T j =125 °C - 2.00 - V C Es at (Terminal) Collector-emitter saturation voltageI C =100 A (Note.6),V GE =15 V T j =150 °C - 2.05 - V T j =25 °C - 1.70 2.15 T j =125 °C - 1.90 - V C Es at (Chip)Collector-emitter saturation voltageI C =100 A (Note.6) ,V GE =15 VT j =150 °C- 1.95-V C i e s Input capacitance - - 10C o e s Output capacitance -- 2.0 C r e s Reverse transfer capacitance V CE =10 V, G-E short-circuited- - 0.17 nFQ G Gate charge V CC =600 V, I C =100 A, V GE =15 V - 233 - nC t d (o n ) Turn-on delay time --300t r Rise time V CC =600 V, I C =100 A, V GE =±15 V, - - 200t d (o f f )Turn-off delay time- - 600 t f Fall time R G =6.2 Ω, Inductive load - - 300 nsT j =25 °C - 1.8 2.25 T j =125 °C - 1.8 - V EC(Note.1)(Terminal) Emitter-collector voltageI E =100 A(Note.6),G-E short-circuited T j =150 °C - 1.8 - VT j =25 °C - 1.7 2.15 T j =125 °C - 1.7 - V EC(Note.1)(Chip) Emitter-collector voltage I E =100 A(Note.6),G-E short-circuitedT j =150 °C- 1.7 - V t r r(Note.1)Reverse recovery timeV CC =600 V, I E =100 A, V GE =±15 V, - - 300 nsQ r r(Note.1)Reverse recovery chargeR G =6.2 Ω, Inductive load - 5.3 - μC E on Turn-on switching energy per pulse V CC =600 V, I C =I E =100 A,- 8.6 - E of f Turn-off switching energy per pulse V GE =±15 V, R G =6.2 Ω, T j =150 °C, - 10.7 - mJ E r r(Note.1)Reverse recovery energy per pulse Inductive load-10.2-mJMain terminals-chip, per switch,R C C '+EE' Internal lead resistance T C =25 °C (Note.2)- - 3.5 m Ω r gInternal gate resistancePer switch--ΩBrake part IGBT/ClampDiLimits Symbol Item Conditions Min. Typ. Max. UnitI C ES Collector-emitter cut-off current V CE =V CES , G-E short-circuited - - 1 mAI G ES Gate-emitter leakage current V GE =V GES , C-E short-circuited - - 0.5 μAV G E(th) Gate-emitter threshold voltage I C =5 mA, V CE =10 V 5.4 6.0 6.6 VT j =25 °C - 1.80 2.25 T j =125 °C - 2.00 - V C Es at (Terminal) Collector-emitter saturation voltageI C =50 A(Note.6),V GE =15 V T j =150 °C - 2.05 - V T j =25 °C - 1.70 2.15 T j =125 °C - 1.90 - V C Es at (Chip)Collector-emitter saturation voltageI C =50 A(Note.6),V GE =15 VT j =150 °C- 1.95-V C i e s Input capacitance - - 5.1C o e s Output capacitance -- 0.45C r e sReverse transfer capacitanceV CE =10 V, G-E short-circuited- - 0.1nFQ G Gate chargeV CC =600 V, I C =50 A, V GE =15V - 117 - nCINSULATED TYPEELECTRICAL CHARACTERISTICS (cont., T j =25 °C, unless otherwise specified)Brake part IGBT/ClampDiLimitsSymbol Item Conditions Min. Typ. Max. Unitt d (o n ) Turn-on delay time --300t r Rise time V CC =600 V, I C =50 A, V GE =±15 V, - - 200t d (o f f ) Turn-off delay time- - 600 t f Fall timeR G =13 Ω, Inductive load - - 300 nsI RRM Repetitive peak reverse current V R =V RRM , G-E short-circuited - - 1 mAT j =25 °C - 1.8 2.25 T j =125 °C - 1.8 - V F(Terminal) Forward voltageI F =50 A(Note.6),G-E short-circuited T j =150 °C - 1.8 - VT j =25 °C - 1.7 2.15 T j =125 °C - 1.7 - V F(Chip) Forward voltage I F =50 A(Note.6),G-E short-circuitedT j =150 °C- 1.7 - V t r r Reverse recovery time V CC =600 V, I F =50 A, V GE =±15 V, - - 300 nsQ r r Reverse recovery chargeR G =13 Ω, Inductive load - 2.7 - μC E on Turn-on switching energy per pulse V CC =600 V, I C =I F =50 A,- 5.5 - E of f Turn-off switching energy per pulse V GE =±15 V, R G =13 Ω, T j =150 °C, - 5.3 - mJ E r r Reverse recovery energy per pulse Inductive load - 4.5 - mJ r gInternal gate resistance---ΩConverter part ConvDiLimitsSymbol Item Conditions Min. Typ. Max. UnitI RRM Repetitive peak reverse currentV R =V RRM , T j =150 °C --20mAV F(Terminal)Forward voltageI F =100 A(Note.6)- 1.28 1.8 VNTC thermistor partLimitsSymbol Item Conditions Min. Typ. Max. UnitR 25 Zero power resistance T C =25 °C(Note.2)4.855.00 5.15 k ΩΔR/R Deviation of resistance T C =100 °C, R 100=493 Ω -7.3 - +7.8 % B (25/50)B constantApproximate by equation (Note.7)- 3375 - KP 25 Power dissipation T C =25 °C(Note.2)- - 10 mWTHERMAL RESISTANCE CHARACTERISTICSLimitsSymbol Item Conditions Min. Typ. Max. UnitR t h (j -c )Q Junction to case, per Inverter IGBT - - 0.20 R t h (j -c )D Junction to case, per Inverter FWDi- - 0.29 K/W R t h (j -c )Q Junction to case, per Brake IGBT - - 0.35 R t h (j -c )D Junction to case, per Brake ClampDi - - 0.63 K/W R t h (j -c )D Thermal resistance(Note. 2)Junction to case, per ConvDi--0.24K/WCase to heat sink, per 1 module,R t h (c -s )Contact thermal resistance(Note. 2)Thermal grease applied(Note.8)- 15 - K/kWINSULATED TYPENote.1: Represent ratings and characteristics of the anti-parallel, emitter-collector free wheeling diode (FWDi).Note.2: Case temperature (T C ) and heat sink temperature (T s ) are defined on the each surface (mounting side) of base plateand heat sink just under the chips. Refer to the figure of chip location.Note.3: Pulse width and repetition rate should be such that the device junction temperature (T j ) dose not exceed T j m a x rating. Note.4: Junction temperature (T j ) should not increase beyond T j m a x rating.Note.5: The base plate (mounting side) flatness measurement points (X, Y) are as follows of the following figure.-:Concavemounting sideNote.6: Pulse width and repetition rate should be such as to cause negligible temperature rise.Refer to the figure of test circuit.Note.7: )T T /()R R ln(B )/(50255025502511-=,R 25: resistance at absolute temperature T 25 [K]; T 25=25 [°C]+273.15=298.15 [K] R 50: resistance at absolute temperature T 50 [K]; T 50=50 [°C]+273.15=323.15 [K]Note.8: Typical value is measured by using thermally conductive grease of λ=0.9 W/(m·K).Note.9: Japan Electronics and Information Technology Industries Association (JEITA) standards,"EIAJ ED-4701/300: Environmental and endurance test methods for semiconductor devices (Stress test I)"Note.10: Use the following screws when mounting the printed circuit board (PCB) on the stand offs."M2.6×10 or M2.6×12 self tapping screw"The length of the screw depends on the thickness of the PCB.RECOMMENDED OPERATING CONDITIONS (T a =25 °C)LimitsSymbol Item Conditions Min. Typ. Max. UnitV C C DC supply voltage Applied across P1-N1 terminals -600850VApplied across GB-Es/V GEon Gate-emitter drive voltage G*P-*/G*N-Es (*=U,V,W) terminals 13.5 15.0 16.5 V Inverter IGBT 6.2 - 62 R G External gate resistancePer switchBrake IGBT13-130ΩINSULATED TYPECHIP LOCATION (top view)Dimension in mm, Tolerance: ±1 mmTr*P/Tr*N/TrBr: IGBT, Di*P/Di*N: FWDi (*=U/V/W), DiBr: ClampDi, CR*P/CR*N: ConvDi (*=R/S/T), Th: NTC thermistorEach mark points the center position of each chip or device.TEST CIRCUIT AND WAVEFORMSCCi Et r r , Q r r test waveformTurn-on / Turn-off switching energy and Reverse recovery energy test waveforms (Integral time instruction drawing)INSULATED TYPE TEST CIRCUITV GEV GEV GEV GEV GEV GEV GEG-Eshort-circuited GVP-V, GVN-Es,GWP-W, GWN-Es,GB-EsG-Eshort-circuitedGUP-U, GUN-Es,GWP-W, GWN-Es,GB-EsG-Eshort-circuitedGUP-U, GUN-Es,GVP-V, GVN-Es,GB-EsG-Eshort-circuitedGUP-U, GUN-Es,GVP-V, GVN-Es,GWP-W, GWN-EsUP / UN IGBT VP / VN IGBT WP / WN IGBT Brake IGBT / ClampDiV CEsat / ClampDi V F test circuitG-Eshort-circuited GVP-V, GVN-Es,GWP-W, GWN-Es,GB-EsG-Eshort-circuitedGUP-U, GUN-Es,GWP-W, GWN-Es,GB-EsG-Eshort-circuitedGUP-U, GUN-Es,GVP-V, GVN-Es,GB-EsUP / UN FWDi VP / VN FWDi WP / WN FWDi ConvDi (ex. phase-R)V EC / ConvDi V F test circuit* In case of the above example, P1/N1/U/V/W should use all each three pin terminals for the external wiring.INSULATED TYPEPERFORMANCE CURVESINVERTER PARTOUTPUT CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGECHARACTERISTICS(TYPICAL)T j =25 °C(Chip)V GE =15 V(Chip)C O L L E C T O R C U R R E N T I C (A )C O L L E C T O R -E M I T T E RS A T U R A T I O N V O L T A G E V C E (V )00.511.522.533.550100150200COLLECTOR CURRENT I C (A)FREE WHEELING DIODEFORWARD CHARACTERISTICS(TYPICAL)G-E short-circuited(Chip)C O L L E C T O R -E M I T T E RS A T U R A T I O N V O L T A G E V C E (V )68101214161820E M I T T E R C U R R E N T I E (A )11010010000.511.522.53GATE-EMITTER VOLTAGE V GE (V) EMITTER-COLLECTOR VOLTAGE V EC (V)INSULATED TYPEHALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) HALF-BRIDGESWITCHING CHARACTERISTICS(TYPICAL)V CC =600 V, V GE =±15 V, R G =6.2 Ω, ---------------: T j =150 °C, - - - - -: T j =125 °CV CC =600 V, V GE =±15 V, I C =100 A, ---------------: T j =150 °C, - - - - -: T j =125 °C S W I T C H I N G T I M E (n s )S W I T C H I N G T I M E (n s)C GHALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) HALF-BRIDGESWITCHING CHARACTERISTICS(TYPICAL)V CC =600 V, V GE =±15 V, R G =6.2 Ω, ---------------: T j =150 °C, - - - - -: T j =125 °CV CC =600 V, V GE =±15 V, I C =100 A, ---------------: T j =150 °C, - - - - -: T j =125 °C S W I T C H I N G E N E R G Y (m J )R E V E R S E R E C O V E R Y E N E R G Y (m J )S W I T C H I N G E N E R G Y (m J ) R E V E R S E R E C O V E R Y E N E R G Y (m J )C EMITTER CURRENT I E (A)GINSULATED TYPECAPACITANCE CHARACTERISTICS (TYPICAL) FREE WHEELING DIODEREVERSE RECOVERY CHARACTERISTICS(TYPICAL)G-E short-circuited, T j =25 °CV CC =600 V, V GE =±15 V, R G =6.2 Ω,---------------: T j =150 °C, - - - - -: T j =125 °C C A P A C I T A N C E (n F )0.010.11101000.1110100t r r (n s ), I r r (A )COLLECTOR-EMITTER VOLTAGE V CE (V) EMITTER CURRENT I E (A)GATE CHARGE CHARACTERISTICS (TYPICAL) TRANSIENT THERMAL IMPEDANCECHARACTERISTICS(MAXIMUM)V CC =600 V, I C =100 A, T j =25 °CSingle pulse, T C =25 °CG A T E -E M I T T E R V O L T A G E V G E (V )05101520100200300400N O R M A L I Z E D T R A N S I E N T T H E R M A L R E S I S T A N C EZ t h (j -c )0.0010.010.110.000010.00010.0010.010.1110R th(j-c)Q =0.20 K/W, R th(j-c)D =0.29 K/WGATE CHARGE Q G (nC)TIME (S)INSULATED TYPEBRAKE PARTCOLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) CLAMP DIODEFORWARD CHARACTERISTICS(TYPICAL)V GE =15 V(Chip)G-E short-circuited(Chip)C O L L E C T O R -E M I T T E RS A T U R A T I O N V O L T A G E V C E s a t (V )00.511.522.533.520406080100F O R W A R D V O L T AG E V F (V )110100COLLECTOR CURRENT I C (A) FORWARD CURRENT I F (A)HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) HALF-BRIDGESWITCHING CHARACTERISTICS(TYPICAL)V CC =600 V, V GE =±15 V, R G =13 Ω, INDUCTIVE LOAD ---------------: T j =150 °C, - - - - -: T j =125 °CV CC =600 V, I C =50 A, V GE =±15 V, INDUCTIVE LOAD---------------: T j =150 °C, - - - - -: T j =125 °C S W I T C H I N G T I M E (n s )S W I T C H I N G T I M E (n s )COLLECTOR CURRENT I C (A) EXTERNAL GATE RESISTANCE R G (Ω)INSULATED TYPEHALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) HALF-BRIDGESWITCHING CHARACTERISTICS(TYPICAL)V CC =600 V, V GE =±15 V, R G =13 Ω, INDUCTIVE LOAD, PER PULSE ---------------: T j =150 °C, - - - - -: T j =125 °CV CC =600 V, I C /I F =50 A, V GE =±15 V, INDUCTIVE LOAD, PER PULSE ---------------: T j =150 °C, - - - - -: T j =125 °C S W I T C H I N G E N E R G Y (m J )R E V E R S E R E C O V E R Y E N E R G Y (m J )S W I T C H I N G EN E R G Y (m J ) R EV E R S E R E C O V E R Y E N E R G Y (m J )COLLECTOR CURRENT I C (A) FORWARD CURRENT I F (A)EXTERNAL GATE RESISTANCE R G (Ω)CLAMP DIODE REVERSE RECOVERY CHARACTERISTICS (TYPICAL) TRANSIENT THERMAL IMPEDANCECHARACTERISTICS(MAXIMUM)V CC =600 V, V GE =±15 V, R G =13 Ω, INDUCTIVE LOAD---------------: T j =150 °C, - - - - -: T j =125 °CSingle pulse, T C =25 °C t r r (n s ), I r r (A )N O R M A L I Z E D T R A N S I E N T T H E R M A L R E S I S T A N C EZ t h (j -c )0.0010.010.110.000010.00010.0010.010.1110R th(j-c)Q =0.35K/W, R th(j-c)D =0.63 K/WFORWARD CURRENT I F (A)TIME (S)INSULATED TYPECONVERTER PARTCONVERTER DIODE FORWARD CHARACTERISTICS (TYPICAL) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS(MAXIMUM)Single pulse, T C =25 °CF O R W A R D C U R R E N T I F (A )10100N O R M A L I Z E D T R A N S I E N T T H E R M A L R E S I S T A N C EZ t h (j -c )0.0010.010.110.000010.00010.0010.010.1110R th(j-c)D =0.24 K/WFORWARD VOLTAGE V F (V)TIME (S)INSULATED TYPEKeep safety first in your circuit designs!•Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage.Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of non-flammable material or (iii) prevention against any malfunction or mishap.Notes regarding these materials•These materials are intended as a reference to assist our customers in the selection of the Mitsubishi semiconductor product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Mitsubishi Electric Corporation or a third party.•Mitsubishi Electric Corporation assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application examples contained in these materials.•All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of publication of these materials, and are subject to change by Mitsubishi Electric Corporation without notice due to product improvements or other reasons. It is therefore recommended that customers contact Mitsubishi Electric Corporation or an authorized Mitsubishi Semiconductor product distributor for the latest product information before purchasing a product listed herein. The information described here may contain technical inaccuracies or typographical errors. Mitsubishi Electric Corporation assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors.Please also pay attention to information published by Mitsubishi Electric Corporation by various means, including the Mitsubishi Semiconductor home page (/Global/index.html).•When using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to evaluate all information as a total system before making a final decision on the applicability of the information and products. Mitsubishi Electric Corporation assumes no responsibility for any damage, liability or other loss resulting from the information contained herein.•Mitsubishi Electric Corporation semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life is potentially at stake. Please contact Mitsubishi Electric Corporation or an authorized Mitsubishi Semiconductor product distributor when considering the use of a product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use.•The prior written approval of Mitsubishi Electric Corporation is necessary to reprint or reproduce in whole or in part these materials. •If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and cannot be imported into a country other than the approved destination.Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited. •Please contact Mitsubishi Electric Corporation or an authorized Mitsubishi Semiconductor product distributor for further details on these materials or the products contained therein.。

SMP100-xxxH225中文资料

SMP100-xxxH225中文资料
元器件交易网
®
SMP100-xxx SMP100-xxxH225
TRISIL TM
FEATURES BIDIRECTIONAL CROWBAR PROTECTION VOLTAGE RANGE : FROM 8V to 320V REPETITIVE PEAK PULSE CURRENT: IPP = 100 A (10/1000 µs) HOLDING CURRENT: IH = 150mA or 225mA LOW LEAKAGE CURRENT: IR = 2 µA max DESCRIPTION The SMP100 series are transient surge arrestors used for the protection of sensitive telecom equipment. MAIN APPLICATIONS Any sensitive equipment requiring protection against lightning strikes : ANALOG AND DIGITAL LINE CARDS MAIN DISTRIBUTION FRAMES TERMINALS AND TRANSMISSION EQUIPMENT GAS-TUBE REPLACEMENT BENEFITS NO AGEING AND NO NOISE IF DESTROYED, THE SMP100 FALLS INTO SHORT CIRCUIT,STILLENSURINGPROTECTION BOARD SPACE SAVING COMPLIES WITH THE FOLLOWING STANDARDS: CCITT K20 VDE0433 VDE0878 IEC-1000-4-5 FCC Part 68, lightning surge type A FCC Part 68, lightning surge type B BELLCORE TR-NWT-001089 First level BELLCORE TR-NWT-001089 Second level CNET l31-24

CM100DY-24A中文资料

CM100DY-24A中文资料

Dual IGBTMOD™A-Series Module100 Amperes/1200 VoltsCM100DY-24APowerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272Outline Drawing and Circuit Diagram Dimensions Inches Millimeters A 3.70 94.0 B 1.89 48.0 C 1.14+0.004/-0.02 29.0+0.1/-0.5D 3.15±0.01 80.0±0.25E 0.67 17.0F 0.91 23.0G 0.16 4.0H 0.71 18.0 J 0.51 13.0K0.4712.0Description:Powerex IGBTMOD™ Modules are designed for use in switching applications. Each moduleconsists of two IGBT Transistors in a half-bridge configuration with each transistor having a reverse-connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assem-bly and thermal management.Features:£ Low Drive Power £ Low V CE(sat)£ Discrete Super-Fast RecoveryFree-Wheel Diode£ Isolated Baseplate for EasyHeat Sinking Applications:£ AC Motor Control £ UPS£ Battery Powered Supplies Ordering Information:Example: Select the complete part module number youdesire from the table below -i.e. CM100DY -24A is a 1200V (V CES ), 100 Ampere Dual IGBTMOD™ Power Module.Type Current Rating V CES AmperesVolts (x 50)CM10024Dimensions Inches Millimeters L 0.26 Dia. Dia. 6.5 M M5 Metric M5 N 0.79 20.0 P 0.63 16.0 Q 0.28 7.0 R 0.83 21.2 S 0.30 7.5 T 0.02 0.5 U 0.110 2.8V0.164.0Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272CM100DY-24ADual IGBTMOD™ A-Series Module100 Amperes/1200 VoltsAbsolute Maximum Ratings, T j = 25°C unless otherwise specifiedRatings Symbol CM100DY-24A Units Junction Temperature T j–40 to 150 °C Storage Temperature T stg–40 to 125 °C Collector-Emitter Voltage (G-E Short) V CES1200 Volts Gate-Emitter Voltage (C-E Short) V GES±20 Volts Collector Current (DC, T C = 84°C*) I C100 Amperes Peak Collector Current I CM200** Amperes Emitter Current*** (T C = 25°C) I E100 Amperes Peak Emitter Current*** I EM200** Amperes Maximum Collector Dissipation (T C = 25°C*, T j≤ 150°C) P C672 Watts Mounting Torque, M5 Main Terminal — 30 in-lb Mounting Torque, M6 Mounting — 40 in-lb Weight — 310 Grams Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) V ISO2500 VoltsStatic Electrical Characteristics, T j = 25°C unless otherwise specifiedCharacteristics Symbol Test Conditions Min. Typ. Max. Units Collector-Cutoff Current I CES V CE = V CES, V GE = 0V — — 1.0 mA Gate Leakage Current I GES V GE = V GES, V CE = 0V — — 0.5 µA Gate-Emitter Threshold Voltage V GE(th)I C = 10mA, V CE = 10V 6.0 7.0 8.0 Volts Collector-Emitter Saturation Voltage V CE(sat)I C = 100A, V GE = 15V, T j = 25°C — 2.1 3.0 VoltsI C = 100A, V GE = 15V, T j = 125°C — 2.4 — Volts T otal Gate Charge Q G V CC = 600V, I C = 100A, V GE = 15V — 500 — nC Emitter-Collector Voltage** V EC I E = 100A, V GE = 0V — — 3.8 VoltsDynamic Electrical Characteristics, T j = 25°C unless otherwise specifiedCharacteristics Symbol Test Conditions Min. Typ. Max. Unitsiesoes CE GEInductive d(on)Load r CC CSwitch d(off)GE1GE2Gfrrrr E*T C, T f measured point is just under the chips.**Pulse width and repetition rate should be such that device junction temperature (T j) does not exceed T j(max) rating.***Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272CM100DY-24ADual IGBTMOD™ A-Series Module 100 Amperes/1200 VoltsThermal and Mechanical Characteristics, T j = 25°C unless otherwise specifiedCharacteristicsSymbol Test Conditions Min. Typ. Max. Units Thermal Resistance, Junction to Case* R th(j-c)Q Per IGBT 1/2 Module — — 0.186 °C/W Thermal Resistance, Junction to Case* R th(j-c)D Per FWDi 1/2 Module— — 0.34 °C/W Contact Thermal Resistance R th(c-f) Per 1/2 Module, Thermal Grease Applied— 0.022 — °C/W External Gate ResistanceR G3.1—42Ω*T C , T f measured point is just under the chips.COLLECTOR-EMITTER VOLTAGE, V CE , (VOLTS)C A P A C I T A N C E , C i e s , C o e s , C r e s , (n F )CAPACITANCE VS. V CE(TYPICAL)10010210210110-110010-21010 1 3425101EMITTER-COLLECTOR VOLTAGE, V EC , (VOLTS)FREE-WHEEL DIODEFORWARD CHARACTERISTICS(TYPICAL)102103E M I T T E R C U R R E N T , I E , (A M P E R E S )GATE-EMITTER VOLTAGE, V GE , (VOLTS)COLLECTOR-EMITTERSATURATION VOLTAGE CHARACTERISTICS(TYPICAL)68101412161820COLLECTOR-CURRENT, I C , (AMPERES)COLLECTOR-EMITTERSATURATION VOLTAGE CHARACTERISTICS(TYPICAL)050150200COLLECTOR-EMITTER VOLTAGE, V CE , (VOLTS) C O L L E C T O R C U R R E N T , I C , (A M P E R E S )OUTPUT CHARACTERISTICS(TYPICAL)02468105010015020010010-1COLLECTOR CURRENT, I C , (AMPERES)103101102102100101S W I T C H I N G T I M E , (n s )HALF-BRIDGESWITCHING CHARACTERISTICS(TYPICAL)103CM100DY-24ADual IGBTMOD™ A-Series Module 100 Amperes/1200 VoltsPowerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272TIME, (s)TRANSIENT THERMALIMPEDANCE CHARACTERISTICS(IGBT & FWDi)10010-110-210-3-1-2-3Z t h = R t h • (N O R M A L I Z E D V A L U E )N O R M A L I Z E D T R A N S I E N T T H E R M A L I M P E D A N C E , Z t h (j -c ')GATE CHARGE, Q G , (nC)G A T E -E M I T T E R V O L T A G E , V G E , (V O L T S )GATE CHARGE VS. V GE2001612840160320480800640EMITTER CURRENT, I E , (AMPERES)R E V E R S E R E C O V E R Y T I M E , t r r , (n s )REVERSE RECOVERY CHARACTERISTICS(TYPICAL)103101102102101103102101 R E V E R S E R E C O V E R Y C U R R E N T , I r r , (A M P E R E S )103COLLECTOR CURRENT, I C , (AMPERES)S W I T C H I N G L O S S , E S W (o n ), E S W (o f f ), (m J /P U L S E )102101102101100103SWITCHING LOSS VS.COLLECTOR CURRENT (TYPICAL)GATE RESISTANCE, R G , (Ω)S W I T C H I N G L O S S , E S W (o n ), E S W (o f f ),(m J /P U L S E )102100101101100102SWITCHING LOSS VS.GATE RESISTANCE (TYPICAL)GATE RESISTANCE, R G , ()R E V E R S E R E C O V E R Y S W I T C H I N G L O S S , E r r , (m J /P U L S E )10210-1100101100101REVERSE RECOVERY SWITCHING LOSS VS.GATE RESISTANCE(TYPICAL)EMITTER CURRENT, I E , (AMPERES)R E V E R S E R E C O V E R Y S W I T C H I N G L O S S , E r r , (m J /P U L S E )102101102101100103REVERSE RECOVERY SWITCHING LOSS VS.EMITTER CURRENT(TYPICAL)。

IGBT模块型号参数大全

IGBT模块型号参数大全

各品牌IGBT模块型号参数大全
一.IGBT模块
1.富士IGBT N系列(高速,低导通压降) P系列 S系列
2.EUPEC(西门子)IGBT 电流参数据库85C标称
DN2:标准系列
KE3:低导通压降系列
KS4:高速系列
DLC:低导通压降系列
PIM:三相桥+七单元+NTC GP系列 FP系列
大功率IGBT模块
CHOPPER=IGBT+二极管 GAL=IGBT+C接二级管 GAR=IGBT+E接二极管
3.三菱IGBT模块
H系列
H系列
A系列
NF系列
U系列
MDX系列
MD3:单相桥+六单元 MD1:三相桥+六单元 MD:三相桥+七单元
E3系列
4.SEMIKRON(西门康)IGBT
低损耗型(频率:0-4KHZ)
沟道式超低损耗型(频率0-6KHZ)
标准系列(频率:4-12KHZ)
软穿通式高速型(频率:5-20KHZ)
CHOPPER GAL=IGBT+C串二极管 GAR=IGBT+E串二极管
MiniSKiiP系列
SEMIX系列
SEMITOP系列
GAL=IGBT+C串二极管 GAR=IGBT+E串二极管
SKIM系列
超高速型(频率:30KHZ)
大功率集成装置(SEMISTACK)
5.IXYS(艾赛斯)IGBT
ID=IGBT+C串二极管 DI=IGBT+串二极管
6.APT IGBT
7.DYNEX IGBT
8.ABB IGCT
模块的基本参数,IGBT模块中文资料参数.。

CM100DY-24H资料

CM100DY-24H资料
*Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj(max) rating. **Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
Ratings Junction Temperature Storage Temperature Collector-Emitter Voltage (G-E SHORT) Gate-Emitter Voltage (C-E SHORT) Collector Current (TC = 25°C) Peak Collector Current Emitter Current** (TC = 25°C) Peak Emitter Current** Maximum Collector Dissipation (TC = 25°C, Tj ≤ 150°C) Mounting Torque, M5 Main Terminal Mounting Torque, M6 Mounting Weight Isolation Voltage (Main Terminal to Baseplate, AC 1 min.)
Diode Reverse Recovery Time Diode Reverse Recovery Charge
Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics Thermal Resistance, Junction to Case Thermal Resistance, Junction to Case Contact Thermal Resistance Symbol Rth(j-c) Rth(j-c) Rth(c-f) Test Conditions Per IGBT Per FWDi Per Module, Thermal Grease Applied Min. – – – Typ. – – – Max. 0.16 0.35 0.065 Units °C/W °C/W °C/W

CM1000DUC-34NF IGBT等各系列型号参数表

CM1000DUC-34NF IGBT等各系列型号参数表

100 100 1400 1400 150 150 150 150 150 150 150 150 150 150 150 150 150 150 150 150 150 150 150 150 150 150 150 150 200 200 200
2500 2500 2500 4000 2500 2500 2500 2500 2500 3500 2500 2500 2500 2500 2500 2500 3500 2500 2500 2500 2500 2500 2500 2500 2500 2500 2500 2500 2500 2500 2500
206 116 240 109 131 110 277 209 213 193 170 183 162 254 116 288 245 129 235 142 104 253 297 133 124 292 278 212 122 253 115
F series U series NFH series (DUS) KA series NX series S series NX type NF series A series NF series A series U series NF series NF series NX series NF series NF series F series U series F series U series NFH series (DUS) F series U series NFH series (DUS) KA series NX series NX series S series NX type NF series A series NF series A series
231 249 114 133 258 249 159 142 233 118

IXYS等 IGBT模板各系列参数大全

IXYS等 IGBT模板各系列参数大全

基本参数 2单元,150A/600V 2单元,200A/600V 2单元,300A/600V 2单元,400A/600V 2单元,600A/600V 2单元,100A/12044 258
型号 CM50TL-24NF CM75TL-24NF CM100TL-24NF CM150TL-24NF CM200TL-24NF CM75TL-12NF
CM150DY-24NF CM200DY-24NF CM300DY-24NF CM400DY-24NF CM600DY-24NF CM75TL-12NF CM100TL-12NF CM150TL-12NF CM200TL-12NF
2单元,150A/1200V 2单元,200A/1200V 2单元,300A/1200V 2单元,400A/1200V 2单元,600A/1200V 6单元,75A/600V 6单元,100A/600V 6单元,150A/600V 6单元,200A/600V
294 259 193 171 227 249 276 251 115
CM100RL-12NF CM150RL-12NF CM200RL-12NF CM50RL-24NF CM75RL-24NF CM100RL-24NF CM150RL-24NF CM200RL-24NF
U系列 型号 CM600HU-12H CM400HU-24H CM600HU-24H CM75DU-12H CM100DU-12H CM150DU-12H CM200DU-12H CM300DU-12H CM400DU-12H CM50DU-24H CM75DU-24H CM100DU-24H 基本参数 1单元,600A/600V 1单元,400A/1200V 1单元,600A/1200V 2单元,75A/600V 2单元,100A/600V 2单元,150A/600V 2单元,200A/600V 2单元,300A/600V 2单元,400A/600V 2单元,50A/1200V 2单元,75A/1200V 2单元,100A/1200V 深圳德意志工业库存 268 228 185 173 106 296 258 120 238 266 187 242 型号 CM150DU-24H CM200DU-24H CM300DU-24H CM75BU-12H CM100BU-12H CM75TU-12H CM100TU-12H CM150TU-12H CM200TU-12H CM50TU-24H CM75TU-24H CM100UF-24H

CM200DY-24H中文资料

CM200DY-24H中文资料

Units °C °C Volts Volts Amperes Amperes Amperes Amperes Watts N·m N·m Grams Vrms
Static Electrical Characteristics, Tj = 25 °C unless otherwise specified
COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL)
400
COLLECTOR CURRENT, IC, (AMPERES) COLLECTOR CURRENT, IC, (AMPERES)
400
COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS)
Sep.1998
元器件交易网
MITSUBISHI IGBT MODULES
CM200DY-24H
HIGH POWER SWITCHING USE INSULATED TYPE
OUTPUT CHARACTERISTICS (TYPICAL)
TRANSFER CHARACTERISTICS (TYPICAL)
7 5 3 2
Tj = 25°C
102
Cies
8
IC = 400A
101
Coes
6
FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL)
CAPACITANCE VS. VCE (TYPICAL)
10
COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS)
103

CM25MD-24H中文资料

CM25MD-24H中文资料

MAXIMUM RATINGS (T j = 25°C)INVERTER PARTBRAKE PARTCONVERTER PARTCOMMON RATINGCollector-emitter voltageGate-emitter voltage Collector Current Emitter CurrentMaximum collector dissipation1200±2025502550104G – E Short C – E Short T C = 25°C PULSE (Note. 2)T C = 25°C PULSE (Note. 2)T f = 25°CSymbol ParameterConditionUnit Rating V V A A A A WV CES V GES I C I CMI E (Note. 1)I EM (Note. 1)P C (Note. 3)Repetitive peak reverse voltage Recommended AC input voltage DC output currentSurge (non-repetitive) forward current I 2t for fusing1600440252502603φ rectifying circuit1 cycle at 60Hz, peak value Non-repetitive Value for one cycle of surge currentSymbol ParameterConditionUnit Rating V V A A A 2sV RRM E a I O I FSM I 2tCollector-emitter voltage Gate-emitter voltage Collector CurrentMaximum Collector dissipation Repetitive peak reverse voltage Forward current1200±202550104120025G – E Short C – E Short T C = 25°C PULSE (Note. 2)T f = 25°CClamp diode part Clamp diode partSymbol V CES V GES I C I CMP C (Note. 3)V RRMI FM (Note. 3)ParameterConditionUnit Rating V V A A W V AT j T stg V iso——Junction temperature Storage temperature Isolation voltage Mounting torque Weight–40 ~ +150–40 ~ +12525000.98 ~1.47100AC 1 min.Mounting M4 screw Typical valueSymbol ParameterConditionUnit Rating °C °C V N . m gELECTRICAL CHARACTERISTICS (T j = 25°C)INVERTER PARTBRAKE PARTCONVERTER PARTNote 1.I E , V EC , t rr, Q rr & die/dt represent characteristics of the anti-parallel, emitter to collector free-wheel diode.2.Pulse width and repetition rate should be such that the device junction temp. (T j ) does not exceed T jmax rating.3.Junction temperature (T j ) should not increase beyond 150°C.4.Pulse width and repetition rate should be such as to cause negligible temperature rise.5.Thermal resistance is specified under following conditions.• The conductive greese applied, between module and fin.• Al plate is used as fin.Collector cutoff current Gate-emitterthreshold voltageGate-emitter cutoff current Collector-emittersaturation voltage Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall timeEmitter-collector voltage Reverse recovery time Reverse recovery charge Thermal resistanceV V 10.53.4—5.03.81.0—1002001503503.5250—1.21.9V CE = V CES , V GE = 0V V GE = V GES , V CE = 0V T j = 25°CT j = 150°C V CC = 600V , I C = 25A, V GE = 15V V CC = 600V , I C = 25A V GE1 = V GE2 = 15V R G = 13ΩResistive loadI E = 25A, V GE = 0V I E = 25A, V GE = 0V di e / dt = – 50A / µsIGBT part, Per 1/6 module FWDi part, Per 1/6 modulemA µA nF nF nF nC ns ns ns ns V ns µC °C/W °C/W——2.72.45———125——————0.22———————————————————I CESI GESC iesC oesC resQ Gt d (on)t rt d (off)t f V EC (Note. 1)t rr (Note. 1)Q rr (Note. 1)R th(j-f)Q (Note. 5)R th(j-f)R (Note. 5)Symbol ParameterTest conditionsV GE(th)V CE(sat)Limits Min.Typ.Max.Unit 64.57.5I C = 2.5mA, V CE = 10VI C = 25A, V GE = 15V(Note. 4)V CE = 10V V GE = 0VMin.Typ.Max.Collector cutoff current Gate-emitterthreshold voltageGate-emitter cutoff current Collector-to-emitter saturation voltage Input capacitance Output capacitanceReverse transfer capacitance Total gate charge Forward voltage dropThermal resistanceV V 10.53.4—5.03.81.0—1.51.21.7V CE = V CES , V GE = 0V V GE = V GES , V CE = 0V T j = 25°CT j = 150°C V CC = 600V , I C = 25A, V GE = 15V I F = 25A, Clamp diode part IGBT partClamp diode partI C = 2.5mA, V CE = 10VI C = 25A, V GE = 15V(Note. 4)V CE = 10V V GE = 0VmA µA nF nF nF nC V °C/W °C/W——2.72.45———125——————————————I CES I GES C ies C oes C res Q G V FMR th(j-f)Q (Note. 5)R th(j-f)R (Note. 5)Symbol ParameterConditionV GE(th)V CE(sat)Limits Unit 64.57.5Repetitive reverse current Forward voltage drop Thermal resistanceV R = V RRM , T j = 150°C I F = 25APer 1/6 modulemA V °C/W——————I RRMV FMR th(j-f) (Note. 5)SymbolParameterConditionLimits Min.Typ.Max.Unit 81.51.7。

MC100EPT24DG中文资料

MC100EPT24DG中文资料

MC100EPT243.3V LVTTL/LVCMOS to Differential LVECL TranslatorDescriptionThe MC100EPT24 is a LVTTL/LVCMOS to differential LVECL translator. Because LVECL levels and LVTTL/LVCMOS levels are used, a −3.3 V, +3.3 V and ground are required. The small outline 8−lead package and the single gate of the EPT24 makes it ideal for those applications where space, performance, and low power are at a premium.Features•350 ps Typical Propagation Delay•Maximum Input Clock Frequency > 1.0 GHz Typical•The 100 Series Contains Temperature Compensation •Operating Range: V CC = 3.0 V to 3.6 V;V EE = −3.6 V to −3.0 V; GND = 0 V•PNP LVTTL Input for Minimal Loading•Q Output will Default HIGH with Input Open•Pb−Free Packages are AvailableSee detailed ordering and shipping information in the package dimensions section on page 5 of this data sheet.ORDERING INFORMATIONQGNDV CCFigure 1. 8−Lead Pinout (Top View) and Logic DiagramD Q NCNCVEETable 1. PIN DESCRIPTIONTable 2. ATTRIBUTESCharacteristicsValue Internal Input Pulldown Resistor N/A Internal Input Pullup Resistor N/A ESD ProtectionHuman Body ModelMachine ModelCharged Device Model> 4 kV > 200 V > 2 kVMoisture Sensitivity, Indefinite Time Out of Drypack (Note 1)Pb Pkg Pb −Free Pkg SOIC −8TSSOP −8DFN8Level 1Level 1Level 1Level 1Level 3Level 1Flammability Rating Oxygen Index: 28 to 34UL 94 V −0 @ 0.125 inTransistor Count181 DevicesMeets or exceeds JEDEC Spec EIA/JESD78 IC Latchup Test 1.For additional information, see Application Note AND8003/D.Table 3. MAXIMUM RATINGSSymbol Parameter Condition 1Condition 2Rating Unit V CC Positive Power Supply GND = 0 V V EE = −3.3V 3.8V V EE Negative Power Supply GND = 0 V V CC = 3.3V−3.8V V IN Input Voltage GND = 0 V V I v V CC0 to V CC VI out Output Current ContinuousSurge 50100mAmAT A Operating Temperature Range−40 to +85°C T stg Storage Temperature Range−65 to +150°Cq JA Thermal Resistance (Junction−to−Ambient)0 lfpm500 lfpm SOIC−8SOIC−8190130°C/W°C/Wq JC Thermal Resistance (Junction−to−Case)Standard Board SOIC−841 to 44°C/Wq JA Thermal Resistance (Junction−to−Ambient)0 lfpm500 lfpm TSSOP−8TSSOP−8185140°C/W°C/Wq JC Thermal Resistance (Junction−to−Case)Standard Board TSSOP−841 to 44°C/Wq JA Thermal Resistance (Junction−to−Ambient)0 lfpm500 lfpm DFN8DFN812984°C/W°C/WT sol Wave Solder PbPb−Free 265265°CStresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.Table 4. LVTTL INPUT DC CHARACTERISTICS V CC = 3.3 V, V EE = −3.6 V to −3.0 V, GND = 0.0 V; T A = −40°C to 85°CSymbol Characteristic Condition Min Typ Max UnitI IH Input HIGH Current V IN = 2.7 V20m AI IHH Input HIGH Current HIGH Voltage V CC = V IN = 3.8 V100m AI IL Input LOW Current V IN = 0.5 V−0.6mAV IK Input Clamp Voltage I IN = −18 mA−1.0VV IH Input HIGH Voltage 2.0VV IL Input LOW Voltage0.8V NOTE:Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit board with maintained transverse airflow greater than 500 lfpm. Electrical parameters are guaranteed only over the declaredoperating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit values are applied individually under normal operating conditions and not valid simultaneously.Table 5. NECL OUTPUT DC CHARACTERISTICS V CC = 3.3 V, V EE = −3.3 V, GND = 0.0 V (Note 2)Symbol Characteristic−40°C25°C85°CUnit Min Typ Max Min Typ Max Min Typ MaxV OH Output HIGH Voltage (Note 3)-1145−1020-895-1145−1020-895-1145−1030-895mV V OL Output LOW Voltage (Note 3)-1945−1820-1695-1945−1820-1695-1945−1820-1695mV I CC Positive Power Supply Current 2.0 4.0 2.0 4.0 2.0 4.0mA I EE Negative Power Supply Current203038203038203038mA NOTE:Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit board with maintained transverse airflow greater than 500 lfpm. Electrical parameters are guaranteed only over the declaredoperating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit values are applied individually under normal operating conditions and not valid simultaneously.2.Output levels will vary 1:1 with GND. V EE can vary ± 0.3 V.3.Outputs are terminated through a 50 W resistor to GND − 2 V.Table 6. AC CHARACTERISTICS V CC = 0 V; V EE = −3.0 V to −5.5 V or V CC = 3.0 V to 5.5 V; V EE = 0 V (Note 4)Symbol Characteristic−40°C25°C85°CUnit Min Typ Max Min Typ Max Min TypMaxf max Maximum Input Clock Frequency (Fig-ure 2)> 1> 1> 1GHzt PLH,t PHLPropagation Delay toOutput Differential (Note 5)300500800300530800300560800ps t JITTER RMS Random Clock Jitter (Figure 2)0.2< 10.2< 10.2< 1ps t rt fOutput Rise/Fall Times Q, Q(20% − 80%) @ 50 MHz7012517080130180100150200psNOTE:Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit board with maintained transverse airflow greater than 500 lfpm. Electrical parameters are guaranteed only over the declaredoperating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit values are applied individually under normal operating conditions and not valid simultaneously.4.Measured using a LVTTL source, 50% duty cycle clock source. All loading with 50 W to GND − 2.0 V.5.Specifications for standard TTL input signal.100200300400500600700800900123456789Figure 2. Output Voltage Amplitude (V OUTpp)/RMS Jittervs. Input Clock Frequency at Ambient TemperatureINPUT CLOCK FREQUENCY (MHz)OUTPUTVOLTAGEAMPLITUDE(mV)RMSRANDOMCLOCKJITTER(ps)Figure 3. Typical Termination for Output Driver and Device Evaluation(See Application Note AND8020/D − Termination of ECL Logic Devices.)V TTV TT = V CC− 2.0 VORDERING INFORMATIONDevice Package Shipping†MC100EPT24D SOIC−898 Units / Rail98 Units / RailMC100EPT24DG SOIC−8(Pb−Free)MC100EPT24DR2SOIC−82500 / Tape & Reel2500 / Tape & ReelMC100EPT24DR2G SOIC−8(Pb−Free)MC100EPT24DT TSSOP−8100 Units / Rail100 Units / RailMC100EPT24DTG TSSOP−8(Pb−Free)MC100EPT24DTR2TSSOP−82500 / Tape & Reel2500 / Tape & ReelMC100EPT24DTR2G TSSOP−8(Pb−Free)MC100EPT24MNR4DFN81000 / Tape & Reel1000 / Tape & ReelMC100EPT24MNR4G DFN8(Pb−Free)†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.Resource Reference of Application NotesAN1405/D−ECL Clock Distribution TechniquesAN1406/D−Designing with PECL (ECL at +5.0 V)AN1503/D−ECLinPS t I/O SPiCE Modeling KitAN1504/D−Metastability and the ECLinPS FamilyAN1568/D−Interfacing Between LVDS and ECLAN1672/D−The ECL Translator GuideAND8001/D−Odd Number Counters DesignAND8002/D−Marking and Date CodesAND8020/D−Termination of ECL Logic DevicesAND8066/D−Interfacing with ECLinPSAND8090/D−AC Characteristics of ECL DevicesPACKAGE DIMENSIONSSOIC−8 NBCASE 751−07ISSUE AHNOTES:1.DIMENSIONING AND TOLERANCING PERANSI Y14.5M, 1982.2.CONTROLLING DIMENSION: MILLIMETER.3.DIMENSION A AND B DO NOT INCLUDEMOLD PROTRUSION.4.MAXIMUM MOLD PROTRUSION 0.15 (0.006)PER SIDE.5.DIMENSION D DOES NOT INCLUDE DAMBARPROTRUSION. ALLOWABLE DAMBARPROTRUSION SHALL BE 0.127 (0.005) TOTALIN EXCESS OF THE D DIMENSION ATMAXIMUM MATERIAL CONDITION.6.751−01 THRU 751−06 ARE OBSOLETE. NEWSTANDARD IS 751−07.DIMAMIN MAX MIN MAXINCHES4.805.000.1890.197MILLIMETERSB 3.80 4.000.1500.157C 1.35 1.750.0530.069D0.330.510.0130.020G 1.27 BSC0.050 BSCH0.100.250.0040.010J0.190.250.0070.010K0.40 1.270.0160.050M0 8 0 8N0.250.500.0100.020S 5.80 6.200.2280.244 YM0.25 (0.010)Z S X S____ǒmminchesǓSCALE 6:1*For additional information on our Pb−Free strategy and solderingdetails, please download the ON Semiconductor Soldering andMounting Techniques Reference Manual, SOLDERRM/D.SOLDERING FOOTPRINT*PACKAGE DIMENSIONSDIM MIN MAX MIN MAX INCHESMILLIMETERS A 2.90 3.100.1140.122B 2.90 3.100.1140.122C 0.80 1.100.0310.043D 0.050.150.0020.006F 0.400.700.0160.028G 0.65 BSC 0.026 BSC L 4.90 BSC 0.193 BSC M0 6 0 6 ____K 0.250.400.0100.016TSSOP −8DT SUFFIXPLASTIC TSSOP PACKAGECASE 948R −02ISSUE ANOTES:1.DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.2.CONTROLLING DIMENSION: MILLIMETER.3.DIMENSION A DOES NOT INCLUDE MOLD FLASH.PROTRUSIONS OR GATE BURRS. MOLD FLASH OR GATE BURRS SHALL NOT EXCEED 0.15(0.006) PER SIDE.4.DIMENSION B DOES NOT INCLUDE INTERLEAD FLASH OR PROTRUSION. INTERLEAD FLASH OR PROTRUSION SHALL NOT EXCEED 0.25 (0.010)PER SIDE.5.TERMINAL NUMBERS ARE SHOWN FOR REFERENCE ONLY.6.DIMENSION A AND B ARE TO BE DETERMINED AT DATUM PLANE −W−.PACKAGE DIMENSIONSDFN8CASE 506AA −01ISSUE DBOTTOM VIEW8 XON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.PUBLICATION ORDERING INFORMATIONECLinPS is a trademark of Semiconductor Components Industries, LLC (SCILLC).。

CM100TJ-24F中文资料

CM100TJ-24F中文资料

Trench Gate Design Six IGBTMOD™100 Amperes/1200 VoltsCM100TJ-24FPowerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272Outline Drawing and Circuit Diagram DimensionsInches Millimeters A 4.78121.5B 2.4261.5C 0.6717.0D 4.33±0.01110.0±0.25E 3.0076.2F 0.7519.05G 0.6015.24H 0.15 3.81J 2.2657.5K 1.97±0.0150.0±0.25L1.0727.0Description:Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists of six IGBT Transistors in a three phase bridge configuration, with each transistor having a reverse-connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate,offering simplified system assembly and thermal management.Features:□Low Drive Power □Low V CE(sat)□Discrete Super-Fast RecoveryFree-Wheel Diode□Isolated Baseplate for EasyHeat Sinking Applications:□AC Motor Control □UPS□Battery Powered Supplies Ordering Information:Example: Select the complete module number you desire from the table - i.e. CM100TJ-24F is a 1200V (V CES ), 100 Ampere Six-IGBT IGBTMOD™ Power Module.Current Rating V CES Type AmperesVolts (x 50)CM10024DimensionsInches Millimeters M 0.15 3.81N 0.7519.05P 0.15 3.81Q 3.0076.2R 0.6015.24S 0.45 1.15T 0.04 1.0U 0.22 Dia. 5.5 Dia.V 0.12 3.0W 0.8120.5X 3.7294.5Y4.62118.11Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272CM100TJ-24FTrench Gate Design Six IGBTMOD™100 Amperes/1200 VoltsAbsolute Maximum Ratings, T j = 25 °C unless otherwise specifiedRatings Symbol CM100TJ-24F Units Junction T emperature T j-40 to 150°C Storage Temperature T stg-40 to 125°C Collector-Emitter Voltage (G-E SHORT)V CES1200Volts Gate-Emitter Voltage (C-E SHORT)V GES±20Volts Collector Current (T c = 25°C)I C100Amperes Peak Collector Current (T j≤ 150°C)I CM200*Amperes Emitter Current (T c = 25°C)**I E100Amperes Peak Emitter Current**I EM200*Amperes Maximum Collector Dissipation (T j < 150°C) (T c = 25°C)P c390Watts Mounting Torque, M5 Mounting–31in-lb Weight–300Grams Isolation Voltage (Main Terminal to Baseplate, AC 1 min.)V iso2500VoltsStatic Electrical Characteristics, T j = 25 °C unless otherwise specifiedCharacteristics Symbol Test Conditions Min.Typ.Max.Units Collector-Cutoff Current I CES V CE = V CES, V GE = 0V––1mA Gate Leakage Current I GES V GE = V GES, V CE = 0V––20µA Gate-Emitter Threshold Voltage V GE(th)I C = 10mA, V CE = 10V567VoltsCE(sat)C GE jC GE jTotal Gate Charge Q G V CC = 600V, I C = 100A, V GE = 15V–1100–nC Emitter-Collector Voltage**V EC I E = 100A, V GE = 0V–– 3.3Volts* Pulse width and repetition rate should be such that the device junction temperature (T j) does not exceed T j(max) rating.** Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272CM100TJ-24FTrench Gate Design Six IGBTMOD™100 Amperes/1200 VoltsDynamic Electrical Characteristics, T j = 25 °C unless otherwise specifiedCharacteristics Symbol Test Conditions Min.Typ.Max.Unitsiesoes CE GEReverse T ransfer Capacitance C–– 1.6nfd(on)CCr CSwitch Turn-off Delay Time t d(off)V GE1 = V GE2 = 15V,––400ns Times Fall Time t f R G = 3.1⍀,––300nsrrDiode Reverse Recovery Charge**Q rr Switching Operation– 4.1–µC Thermal and Mechanical Characteristics, T j = 25 °C unless otherwise specifiedCharacteristics Symbol Test Conditions Min.Typ.Max.Units Thermal Resistance, Junction to Case R th(j-c)Q Per IGBT 1/6 Module, T c Reference––0.32°C/WPoint per Outline DrawingThermal Resistance, Junction to Case R th(j-c)D Per FWDi 1/6 Module, T c Reference––0.36°C/WPoint per Outline drawingThermal Resistance, Junction to Case R th(j-c)'Q Per IGBT 1/6 Module,–0.18 –°C/WT c Reference Point Under ChipThermal Resistance, Junction to Case Rth(j-c)'D Per FWDi 1/6 Module, T c Reference–0.20–°C/WT c Reference Point Under ChipContact Thermal Resistance R th(c-f)Per Module, Thermal Grease Applied–0.13–°C/W ** Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).CM100TJ-24FTrench Gate Design Six IGBTMOD™100 Amperes/1200 VoltsPowerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272GATE CHARGE, Q G , (nC)100101102103E M I T T E R C U R R E N T , I E , (A M P E R E S )COLLECTOR-EMITTERSATURATION VOLTAGE CHARACTERISTICS(TYPICAL)COLLECTOR-EMITTERSATURATION VOLTAGE CHARACTERISTICS(TYPICAL) C O L L E C T O R C U R R E N T , I C , (A M P E R E S )OUTPUT CHARACTERISTICS(TYPICAL)12040080160200EMITTER CURRENT, I E , (AMPERES)R E V E R S E R E C O V E R Y T I M E , t r r , (n s )103102101TIME, (s)-1-2-3。

CM200HA-24H中文资料

CM200HA-24H中文资料
Dia. 6.5 M6 M4
Description: Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists of one IGBT Transistor in a single configuration with a reverseconnected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management.
Dimensions M N P Q R S T U V W X
Inches 0.83 0.69 0.63 0.51 0.43 0.35 0.28 0.12 0.26 Dia. M6 Metric M4 Metric
Millimeters 21.0 17.5 16.0 13.0 11.0 9.0 7.0 3.0
Inches 4.21 3.661±0.01 2.44 1.89±0.01 1.42 Max. 1.34 1.18 1.14 0.98 Max. 0.94 0.93
Millimeters 107.0
93.0±0.25 62.0
48.0±0.25 36.0 Max.
34.0 30.0 29.0 25.0 Max. 24.0 23.5
4
2 IC = 80A
0 0
103
4
8
12 16 20

CM300DY-24H中文资料

CM300DY-24H中文资料

C1
E1
C2
Sep.1998
元器件交易网
MITSUBISHI IGBT MODULES
CM300DY-24H
HIGH POWER SWITCHING USE INSULATED TYPE Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified
COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL)
600
COLLECTOR CURRENT, IC, (AMPERES) COLLECTOR CURRENT, IC, (AMPERES)
600
COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS)
Characteristics Input Capacitance Output Capacitance Reverse Transfer Capacitance Resistive Load Switching Times Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Symbol Cies Coes Cres td(on) tr td(off) tf t00A/µs IE = 300A, diE/dt = –600A/µs VCC = 600V, IC = 300A, VGE1 = VGE2 = 15V, RG = 1.0Ω VGE = 0V, VCE = 10V Test Conditions Min. – – – – – – – – – Typ. – – – – – – – – 2.23 Max. 60 21 12 250 500 350 350 250 – Units nF nF nF ns ns ns ns ns µC

三菱 CM100TL-24NF 说明书

三菱 CM100TL-24NF 说明书

I C = 10mA, V CE = 10V I C = 100A, V GE = 15V V CE = 10V V GE = 0VV CE = V CES , V GE = 0V V GE = V GES , V CE = 0V V CC = 600V, I C = 100A, V GE = 15VV CC = 600V, I C = 100A V GE1 = V GE2 = 15VR G = 3.1Ω, Inductive load switching operation I E = 100AI E = 100A, V GE = 0V IGBT part (1/6 module)*1FWDi part (1/6 module)*1Case to fin, Thermal compound Applied (1/6 module)*21200±20100200100200620–40 ~ +150–40 ~ +12525002.5 ~ 3.52.5 ~ 3.5350HIGH POWER SWITCHING USEV V A A A A W °C °C V N • m N • m g10.53.0—17.51.50.34—10070300350150—3.80.200.28—42mA µA nF nF nF nC ns ns ns ns µC V °C/W °C/W °C/W Ω——2.12.4———500—————4.8———0.085———————————————————3.17V V 68ns Collector cutoff current Gate leakage current Input capacitance Output capacitanceReverse transfer capacitance Total gate charge Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall timeReverse recovery time Reverse recovery charge Emitter-collector voltage Contact thermal resistance External gate resistanceGate-emitter threshold voltage Collector-emitter saturation voltage Thermal resistance I CES I GES C ies C oes C res Q G t d(on)t rt d(off)t ft rr (Note 1)Q rr (Note 1)V EC(Note 1)R th(j-c)Q R th(j-c)R R th(c-f)R GSymbol ParameterV GE(th)V CE(sat)*1 : Tc measured point is just under the chips.If you use this value, R th(f-a) should be measured just under the chips.*2 : Typical value is measured by using Shin-etsu Silicone “G-746”.Note 1. I E , V EC , t rr & Q rr represent characteristics of the anti-parallel, emitter to collector free-wheel diode (FWDi).2. Pulse width and repetition rate should be such that the device junction temp. (T j ) does not exceed T jmax rating.3. Junction temperature (T j ) should not increase beyond 150°C.4. Pulse width and repetition rate should be such as to cause neglible temperature rise.Collector-emitter voltage Gate-emitter voltage Maximum collector dissipation Junction temperature Storage temperature Isolation voltage WeightG-E Short C-E ShortDC, T C = 80°C *1Pulse (Note 2)Pulse(Note 2)T C = 25°CMain Terminal to base plate, AC 1 min.Main Terminal M5Mounting holes M5Typical valueSymbol ParameterCollector current Emitter currentTorque strength ConditionsUnit Ratings V CES V GES I C I CMI E (Note 1)I EM (Note 1)P C (Note 3)T j T stg V iso———Unit Typ.Limits Min.Max.ABSOLUTE MAXIMUM RATINGS (Tj = 25°C)ELECTRICAL CHARACTERISTICS (Tj = 25°C)Test conditionsT j = 25°C T j = 125°CHIGH POWER SWITCHING USEHIGH POWER SWITCHING USEHIGH POWER SWITCHING USE。

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Static Electrical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics Collector-Cutoff Current Gate Leakage Voltage Gate-Emitter Threshold Voltage Collector-Emitter Saturation Voltage Symbol ICES IGES VGE(th) VCE(sat) QG VEC Test Conditions VCE = VCES, VGE = 0V VGE = VGES, VCE = 0V IC = 10mA, VCE = 10V IC = 100A, VGE = 15V, Tj = 25°C IC = 100A, VGE = 15V, Tj = 125°C Total Gate Charge Emitter-Collector Voltage* VCC = 600V, IC = 100A, VGE = 15V IE = 100A, VGE = 0V Min. – – 4.5 – – – – Typ. – – 6 2.9 2.85 375 – Max. 1 0.5 7.5 3.7 – – 3.2 Units mA µA Volts Volts Volts nC Volts
D C
GwP EwP GuN EuN GvN EvN
TC Measured Point
u v
TC Measured M Point GwN EwN
w
N 5 - M5 NUTS E H J E J H E
K
TAB#110 t=0.5
P Q
Description: Mitsubishi IGBT Modules are designed for use in switching applications. Each module consists of six IGBTs in a three phase bridge configuration, with each transistor having a reverse-connected superfast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. Features: Low Drive Power Low VCE(sat) Discrete Super-Fast Recovery Free-Wheel Diode High Frequency Operation Isolated Baseplate for Easy Heat Sinking Applications: AC Motor Control Motion/Servo Control UPS Welding Power Supplies
0 0 4 8 12 16 20 0 40 80 120 160 200
GATE-EMITTER VOLTAGE, VGE, (VOLTS) COLLECTOR-CURRENT, IC, (AMPERES)
COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL)
* Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj(max) rating.
Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified
* Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj(max) rating. **Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
Ordering Information: Example: Select the complete module number you desire from the table - i.e. CM100TU-24H is a 1200V (VCES), 100 Ampere SixIGBT Module.
Sep.1998
元器件交易网
MITSUBISHI IGBT MODULES
CM100TU-24H
HIGH POWER SWITCHING USE INSULATED TYPE
OUTPUT CHARACTERISTICS (TYPICAL)
TRANSFER CHARACTERISTICS (TYPICAL)
Diode Reverse Recovery Time Diode Reverse Recovery Charge
Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics Thermal Resistance, Junction to Case Thermal Resistance, Junction to Case Contact Thermal Resistance Symbol Rth(j-c)Q Rth(j-c)D Rth(c-f) Test Conditions Per IGBT 1/6 Module Per Free-Wheel Diode 1/6 Module Per Module, Thermal Grease Applied Min. – – – Typ. – – 0.015 Max. 0.19 0.35 – Units °C/W °C/W °C/W
Ratings Junction Temperature Storage Temperature Collector-Emitter Voltage (G-E SHORT) Gate-Emitter Voltage (C-E SHORT) Collector Current (Tc = 25°C) Peak Collector Current (Tj ≤ 150°C) Emitter Current** Peak Emitter Current** Maximum Collector Dissipation (Tj < 150°C) Mounting Torque, M5 Main Terminal Mounting Torque, M5 Mounting Weight Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) Symbol Tj Tstg VCES VGES IC ICM IE IEM Pc – – – Viso CM100TU-24H -40 to 150 -40 to 125 1200 ±20 100 200* 100 200* 650 2.5~3.5 2.5~3.5 680 2500 Units °C °C Volts Volts Amperes Amperes Amperes Amperes Watts N·m N·m Grams Vrms
Type CM Current Rating Amperes 100 VCES Volts (x 50) 24
Sep.1998
元器件交易网
MITSUBISHI IGBT MODULES
CM100TU-24H
HIGH POWER SWITCHING USE INSULATED TYPE Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified
元器件交易网
MITSUBISHI IGBT MODULES
CM100TU-24H
HIGH POWER SWITCHING USE INSULATED TYPE
A B F G E H E H G E S K R 4 - Mounting Holes
L GuP EuP GvP EvP
COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL)
200
COLLECTOR CURRENT, IC, (AMPERES) COLLECTOR CURRENT, IC, (AMPERES)
200 160
COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS)
Characteristics Input Capacitance Output Capacitance Reverse Transfer Capacitance Resistive Load Switch Times Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Symbol Cies Coes Cres td(on) tr td(off) tf trr Qrr VCC = 600V, IC = 100A, VGE1 = VGE2 = 15V, RG = 3.1Ω, Resistive Load Switching Operation IE = 100A, diE/dt = -200A/µs IE = 100A, diE/dt = -200A/µs VCE = 10V, VGE = 0V Test Conditions Min. – – – – – – – – – Typ. – – – – – – – – 0.55 Max. 15 5 3 100 200 300 350 300 – Units nF nF nF ns ns ns ns µC µC
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